JP2006112826A - Temperature measuring device, method, and system, control system, and control method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress to the utmost a labor, a time and cost required for temperature measurement, by measuring at a plurality of measuring points at a time with a simple constitution. <P>SOLUTION: This device comprises a light source 110; the first splitter 120 for splitting light from the light source into light for temperature measurement and a reference light; the second splitter 130 for splitting the light for measurement into the first to the n-th measuring light to the number of n; a reference light reflection means 140 for reflecting the reference light; a driving means 142 for changing the optical path length of the reflected reference light by driving the reference light reflection means; and a light receiving means 150 for measuring interference between the first to the n-th measuring light reflected from a temperature measuring object T and the reference light reflected from the reference light reflection means. Each optical path length of the first to the n-th measuring light from the second splitter to the object T is mutually different respectively. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a temperature measurement device, a temperature measurement method, a temperature measurement system, a control system, and a control method that can accurately measure the temperature of an object to be measured, such as a front surface, back surface, and inner layer of a semiconductor wafer or a liquid crystal substrate.

  For example, accurate measurement of the temperature of a substrate to be processed, such as a semiconductor wafer (hereinafter also simply referred to as “wafer”) processed by a substrate processing apparatus, is formed on the wafer by the results of various processes such as film formation and etching. This is also extremely important from the viewpoint of accurately controlling the shape and physical properties of the film and holes. For this reason, the temperature of a wafer has been conventionally measured by various methods such as a resistance thermometer and a measurement method using a fluorescence thermometer for measuring the temperature of the back surface of a substrate.

  In recent years, a temperature measurement method and apparatus capable of directly measuring the wafer temperature, which has been difficult with the conventional temperature measurement method as described above, have been studied (see, for example, Patent Documents 1 and 2). A specific example of such a temperature measuring device will be described with reference to FIGS. FIG. 7 is a diagram for explaining the principle of a conventional temperature measuring device, and FIG. 8 is a diagram conceptually showing an interference waveform measured by the temperature measuring device.

  The temperature measuring apparatus 10 shown in FIG. 7 uses a low coherence interferometer based on, for example, a Michelson interferometer. The temperature measuring apparatus 10 includes a light source 12 configured by, for example, a low-coherence SLD (Super Luminescent Diode), and a reference light that irradiates the reference mirror 20 with light from the light source 12 and a measurement that irradiates the temperature measurement object 30. A beam splitter 14 that divides the light into two, a reference mirror 20 that can be driven in one direction and can change the optical path length of the reference light, reflected light of the reference light from the reference mirror 20, and a temperature measurement object 30 And a light receiver 16 for measuring the interference by receiving the reflected light of the measurement light from.

  In such a temperature measuring apparatus 10, the light from the light source 12 is divided into the reference light and the measuring light by the beam splitter 14, and the measuring light is irradiated toward the temperature measurement object and reflected by each layer. The reference light is irradiated toward the reference mirror 20 and reflected by the mirror surface. Then, the respective reflected lights again enter the beam splitter 14, and at this time, depending on the optical path length of the reference light, they are overlapped to cause interference, and the interference wave is detected by the light receiver 16.

Therefore, when the temperature is measured, the reference mirror 20 is driven in one direction to change the optical path length of the irradiation light. Then, since the coherence length of the light from the light source 12 is short due to the low coherence property of the light source 12, normally, strong interference occurs in a place where the optical path length of the measurement light and the optical path length of the reference light coincide with each other, and in other places Interference is substantially reduced. In this way, the reference mirror 20 is driven in the front-rear direction (arrow direction in FIG. 7), for example, and the optical path length of the reference light is changed to thereby change the refractive index difference in each layer (A layer, B layer) of the temperature measurement object. The reflected light of the measurement light by (n ₁ , n ₂ ) interferes with the reflected light of the reference light, and an interference waveform as shown in FIG. 8 is detected. As a result, it is possible to measure the temperature measurement object in the depth direction.

  For example, in FIG. 8, when the temperature measurement object is heated by a heater or the like and the temperature changes, the temperature measurement object expands. At this time, since the refractive index of each layer of the temperature measurement object 30 also changes, the position of the interference waveform shifts before and after the temperature change, the width between the peak positions changes, and the peak position of the interference waveform changes. The change width corresponds to the temperature change. Further, since the peak position of the interference waveform corresponds to the moving distance of the reference mirror 20, the temperature change is measured by accurately measuring the width of the peak position of the interference waveform based on the moving distance of the reference mirror 20. be able to.

International Publication No. 03/087744 Pamphlet JP 2001-203249 A JP 9-318462 A

  By the way, in order to uniformly control, for example, in-plane processing such as the central portion and the edge portion of the wafer, it is not sufficient to measure the temperature at one measurement point, and it is preferable to measure the temperature at a plurality of measurement points. In this regard, in order to detect temperatures at a plurality of measurement points using the above-described temperature measurement device, it is considered that it is only necessary to provide as many temperature measurement devices as the number of measurement points.

  However, if there are as many temperature measurement devices as the number of measurement points, it is necessary to measure the interference wave at each measurement point while moving the reference mirror in each temperature measurement device. Since a considerable number of light sources 12, reference mirrors 20, and light receivers 16 are required, there is a problem that costs increase.

  As a technique capable of measuring the temperature at a plurality of measurement points, there is a technique as shown in Patent Document 3. This is because a splitter, a sensing fiber for measurement light, a reference fiber for reference light, and a reflector are used as one set of sensors, a plurality of sets of sensors are provided, and light from one light source is provided for each set of sensors. Is incident through a splitter.

  However, in the technique disclosed in Patent Document 3, the principle is different from that shown in FIG. 7 in that light from a light source is converted into pulsed light through a transmission gate and incident on each sensor. That is, in the technique of Patent Document 3, in order to modulate the pulsed light and enter the sensors to measure interference, it is necessary to input the reflected light through the receiving gate for each set of sensors. The temperature at the measurement point cannot be measured at once.

  Therefore, the present invention has been made in view of such problems, and the object of the present invention is to measure the temperature at a plurality of measurement points at once with a simpler configuration, and to save time and effort for temperature measurement. An object of the present invention is to provide a temperature measuring device and the like that can be reduced as much as possible and that can suppress the cost as much as possible.

  In order to solve the above-described problem, according to an aspect of the present invention, a light source, a first splitter for splitting light from the light source into temperature measurement light and reference light, and the first splitter A second splitter for further splitting the measurement light into n first to n-th measurement lights, reference light reflecting means for reflecting the reference light from the first splitter, and the reference light An optical path length changing means for changing the optical path length of the reference light reflected from the reflecting means, and a reflected light transmitting means for transmitting the reference light from the first splitter to the reference light irradiation position for irradiating the reference light reflecting means. First to n-th measurement light transmission means for transmitting the first to n-th measurement lights from the second splitter to measurement light irradiation positions for irradiating each measurement point of the temperature measurement object, respectively, and the temperature measurement From the object Light receiving means for measuring interference between the first to n-th measurement light beams that radiate and the reference light reflected from the reference-light reflection means, from the second splitter in the first to n-th measurement light beams There is provided a temperature measuring device characterized in that each optical path length to the temperature measuring object is different from each other.

  In order to solve the above problems, according to another aspect of the present invention, n first to nth measurement lights each having a different optical path length are irradiated to each measurement point of a temperature measurement object, and a reference light is emitted. A step of irradiating the reference light reflecting means and a first light reflecting from the temperature measurement object while changing the optical path length of the reference light reflected from the reference light reflecting means by moving the reference light reflecting means in one direction. A step of measuring interference between the first to n-th measurement light and the reference light reflected from the reference light reflecting means, and a step of measuring the temperature of each measurement point of the temperature measurement object based on the result of the interference measurement There is provided a temperature measurement method characterized by comprising:

  In such an apparatus and method according to the present invention, the second splitter for splitting the measuring light from the light source by the required number of measuring lights is provided, and the measuring light transmitting means for transmitting each measuring light is provided for each measuring light. With a simple configuration in which the optical path lengths of light are arranged differently, the temperature at a plurality of measurement points can be accurately measured in a non-contact manner at the same time. As a result, the number of measurement points can be easily increased while minimizing the cost, and the labor and time required for temperature measurement can be reduced as much as possible.

  In the above apparatus and method, the intensity ratio between the measurement light split by the first splitter and the reference light is, for example, n: 1, and the first to nth measurement lights split by the second splitter. The intensity of each is preferably 1 / n of the intensity of the measurement light, for example. Thereby, since the intensity | strength of the 1st-n-th measurement light and reference light becomes the same intensity | strength, the interference waveform which can measure a peak-to-peak width etc. easily for every measurement light is obtained.

  Further, in the above apparatus and method, the first to n-th measurement light is irradiated to the temperature measurement object between each measurement light irradiation position of the first to n-th measurement light and the temperature measurement object. Shutter means that can be turned on and off may be provided. Thus, by providing the shutter means, it is possible to irradiate the measurement light to a desired measurement point and perform temperature measurement only at the measurement point.

  In the above apparatus and method, the temperature measurement object is a substrate to be processed (for example, a semiconductor wafer, a liquid crystal substrate, etc.) processed by a substrate processing apparatus, and the first to n-th measurement light transmission means are You may make it arrange | position to the said substrate processing apparatus so that the said 1st-nth measurement light may be irradiated to the some measurement point in the surface of a to-be-processed substrate, respectively. Thereby, the temperature of the several measurement point in the surface of a to-be-processed substrate, for example, a semiconductor wafer, can be measured at once.

  In the above apparatus and method, the substrate processing apparatus is connected to the processing chamber for performing a predetermined process on the substrate to be processed, and unloads the substrate to be processed between the processing chamber. And at least one of the first to n-th measurement light transmission means is disposed in the transfer chamber, and the measurement substrate is irradiated with the measurement light in the transfer chamber. You may be made to do. Thus, not only the temperature of the substrate to be processed in the processing chamber but also the temperature of another substrate to be processed in the transfer chamber can be measured at a time.

  In the apparatus and method, the temperature measurement object is a substrate to be processed that is processed by the substrate processing apparatus and a focus ring that is disposed around the substrate to be processed. At least one of the light transmission means may be arranged so that the measurement light is irradiated also to the focus ring. Thus, not only the temperature of the substrate to be processed but also the temperature of the focus ring can be measured at a time.

  In the above apparatus and method, the temperature measurement object is an upper electrode disposed in a processing chamber of the substrate processing apparatus, and at least one of the first to n-th measuring light transmission means includes: You may arrange | position so that measurement light may be irradiated also to the said upper electrode. Thereby, the temperature of the several measurement point in an upper electrode can be measured at once. Further, when measuring the temperature of the substrate to be processed and the focus ring, the temperature of the upper electrode can be measured at the same time as these temperatures.

  Further, in the above method, the step of measuring the temperature of the temperature measurement object based on the result of the interference measurement includes a measurement result obtained by measuring the optical path length of the first to n-th measurement light based on at least the interference wave, The temperature of the temperature measurement object may be calculated based on the initial optical path length unique to the temperature measurement object. Since the thickness of a temperature measurement object such as a semiconductor wafer may vary from one semiconductor wafer to another, the temperature of the wafer can be measured more accurately by converting the temperature according to the specific thickness of the semiconductor wafer. Can do.

  In order to solve the above problems, according to another aspect of the present invention, there is provided a temperature measurement system including a substrate processing apparatus and a temperature measuring apparatus, wherein the substrate processing apparatus is at least for the substrate to be processed. A processing chamber for performing a predetermined process, wherein the temperature measuring device includes: a light source; a first splitter for splitting light from the light source into temperature measuring light and reference light; A second splitter for further splitting the measurement light into n first to n-th measurement lights, reference light reflecting means for reflecting the reference light from the first splitter, and the reference light reflection Optical path length changing means for changing the optical path length of the reference light reflected from the means, and reflected light transmitting means for transmitting the reference light from the first splitter to the reference light irradiation position for irradiating the reference light reflecting means; ,in front First to n-th measurement light transmission means for transmitting the first to n-th measurement lights from the second splitter to the measurement light irradiation positions for irradiating the measurement points on the substrate to be processed, respectively, and reflection from the substrate to be processed Light receiving means for measuring interference between the first to nth measurement lights and the reference light reflected from the reference light reflecting means, and from the second splitter in the first to nth measurement lights There is provided a temperature measurement system characterized in that each optical path length to a substrate to be processed is different from each other. According to such a temperature measurement system according to the present invention, for example, the temperatures of a plurality of measurement points in the surface of the substrate to be processed disposed in the processing chamber of the substrate processing apparatus can be measured at a time.

  In order to solve the above problems, according to another aspect of the present invention, there is provided a control system including a substrate processing apparatus, a temperature measurement apparatus, and a control apparatus, wherein the substrate processing apparatus includes at least the substrate to be processed. The temperature measuring device includes a light source, a first splitter for splitting light from the light source into temperature measuring light and reference light, and the first A second splitter for splitting measurement light from the splitter into n first to n-th measurement lights; reference light reflecting means for reflecting reference light from the first splitter; Optical path length changing means for changing the optical path length of the reference light reflected from the reference light reflecting means, and reflected light for transmitting the reference light from the first splitter to the reference light irradiation position for irradiating the reference light reflecting means Transmission hand First to n-th measurement light transmission means for transmitting the first to n-th measurement light beams from the second splitter to the measurement light irradiation positions for irradiating the measurement points on the substrate to be processed, respectively, and the processing target A light receiving means for measuring interference between the first to nth measurement lights reflected from the substrate and the reference light reflected from the reference light reflection means; and the second of the first to nth measurement lights. The optical path lengths from the splitter to the substrate to be processed are different from each other, and the control device is configured to perform the control based on the interference wave between the first to nth measurement light and the reference light measured by the light receiving means. The temperature of each measurement point of the substrate to be processed is calculated, and at least one of temperature control and process control of the substrate to be processed in the processing chamber of the substrate processing apparatus is performed based on these temperatures. When Control system is provided that.

  According to such a control system according to the present invention, for example, the temperatures of a plurality of measurement points in the surface of a substrate to be processed disposed in the processing chamber of the substrate processing apparatus can be measured at a time. Since the temperature control and process control of the substrate to be processed can be performed based on the temperature of the substrate itself, the process characteristics within the surface of the substrate to be processed can be accurately controlled, and the stability of the substrate processing apparatus can be improved. be able to.

  In the control system, the substrate processing apparatus includes a focus ring disposed around the substrate to be processed disposed in the processing chamber, and includes at least one of the first to nth measurement light transmission units. One is arranged so that the measurement light is irradiated also to the focus ring, and the control device also calculates the temperature of the focus ring based on the interference wave from the light receiving means, and this focus While considering the temperature of the ring, at least one of temperature control and process control of the target substrate in the processing chamber of the substrate processing apparatus may be performed. According to this, since the temperature control and process control of the substrate to be processed can be performed in consideration of the temperature of the focus ring, the process characteristics of the end portion of the substrate to be processed can be accurately controlled.

  In the above control system, the substrate processing apparatus includes an upper electrode disposed in the processing chamber, and at least one of the first to n-th measurement light transmission units is connected to the upper electrode. The control device also calculates the temperature of the upper electrode and considers the temperature of the upper electrode while taking into account the temperature of the upper electrode. At least one of the substrate temperature control and the process control may be performed. According to this, since the temperature control and process control of the substrate to be processed can be performed in consideration of the temperature of the upper electrode, the process characteristics in the surface of the substrate to be processed can be controlled more accurately.

  In order to solve the above-described problem, according to another aspect of the present invention, there is provided a control method for a control system of a substrate processing apparatus that performs a predetermined process on a substrate to be processed, each of n number of optical paths having different optical path lengths. Irradiating each measurement point of the substrate to be processed with 1st to nth measurement light, irradiating the reference light to the reference light reflecting means, and moving the reference light reflecting means in one direction to move the reference light reflecting means. Measuring the interference between the first to nth measurement light reflected from the substrate to be processed and the reference light reflected from the reference light reflecting means while changing the optical path length of the reference light reflected from the reference light, and the interference The step of measuring the temperature of each measurement point of the substrate to be processed based on the measurement result, and the temperature of the substrate to be processed in the substrate processing apparatus based on the measured temperature of each measurement point of the substrate to be processed Control method characterized by a step of performing at least one of the control of the control and process control are provided.

  According to such a control method of the present invention, for example, the temperatures of a plurality of measurement points in the surface of the substrate to be processed disposed in the processing chamber of the substrate processing apparatus can be measured at one time. Since the temperature control and process control of the substrate to be processed can be performed based on the temperature of the substrate itself, the process characteristics within the surface of the substrate to be processed can be accurately controlled, and the stability of the substrate processing apparatus can be improved. be able to.

  As described above, according to the present invention, the temperatures of a plurality of measurement points in the temperature measurement object can be measured at a time with a simple configuration. As a result, the number of measurement points can be easily increased while minimizing the cost, and the labor and time required for temperature measurement can be reduced as much as possible.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the present specification and drawings, components having substantially the same functional configuration are denoted by the same reference numerals, and redundant description is omitted.

(Temperature measuring device)
A temperature measuring apparatus according to an embodiment of the present invention will be described with reference to the drawings. FIG. 1 is a block diagram showing a schematic configuration of a temperature measuring apparatus according to the present embodiment. The temperature measuring apparatus 100 according to the present embodiment is based on the principle as shown in FIG. 7 described above, and measures the temperature at a plurality of measurement points by a single reference light reflecting means such as a reference mirror scan with a simple configuration. It is made to be able to. A specific configuration of such a temperature measuring apparatus 100 is as follows.

  As shown in FIG. 1, the temperature measuring device 100 includes a light source 110, a first splitter 120 for splitting light from the light source 110 into temperature measuring light and reference light, and the first splitter 120. A second splitter 130 for further splitting the measuring light into n first to n-th measuring lights, a reference light reflecting means 140 for reflecting the reference light from the first splitter 120, Optical path length changing means for changing the optical path length of the reference light reflected from the reference light reflecting means 140. The optical path length changing means is constituted by a driving means 142 such as a motor for driving the reference light reflecting means 140 constituted by a reference mirror or the like in one direction parallel to the incident direction of the reference light. Thus, by driving the reference mirror in one direction, the optical path length of the reference light reflected from the reference mirror can be changed.

  In addition, the temperature measuring apparatus 100 reflects the first to n-th measurement lights reflected from the temperature measurement object T when the first to n-th measurement points in the temperature measurement object T such as a wafer are irradiated. A light receiving means 150 for measuring interference between the nth measurement light and the reference light reflected from the reference light reflecting means 140 when the reference light reflecting means 140 is irradiated with the reference light.

  As the light source 110 constituting such a temperature measuring device 100, any light can be used as long as interference between the measuring light and the reference light can be measured. For example, when measuring the temperature of a wafer as the temperature measurement object T, light that is such that reflected light from at least the distance between the front surface and the back surface of the wafer (usually about 800 to 1500 μm) does not cause interference is preferable. . Specifically, for example, it is preferable to use low coherence light. Low coherence light refers to light with a short coherence length. The center wavelength of the low coherence light is preferably 0.3 to 20 μm, for example, and more preferably 0.5 to 5 μm. The coherence length is preferably 0.1 to 100 μm, for example, and more preferably 3 μm or less. By using such low-coherence light as the light source 110, it is possible to avoid an obstacle due to unnecessary interference, and it is possible to easily measure interference with reference light based on reflected light from the surface or inner layer of the wafer.

  Examples of the light source using the low-coherence light include SLD (Super Luminescent Diode), LED, high-intensity lamp (tungsten lamp, xenon lamp, etc.), ultra-wideband wavelength light source, and the like. Among these low-coherence light sources, it is preferable to use an SLD as the light source 110 in view of high brightness.

  For example, an optical fiber coupler is used as the first splitter 120. However, the present invention is not limited to this, and any material that can be split into reference light and measurement light may be used. For the second splitter 130, for example, an optical fiber coupler is used. However, the present invention is not limited to this, and any material that can be split into the first to n-th measurement beams may be used. As the first splitter 120 and the second splitter 130, for example, an optical waveguide type demultiplexer, a semi-transparent mirror, or the like may be used.

  The reference light reflecting means 140 is constituted by a reference mirror, for example. As the reference mirror, for example, a corner cube prism, a plane mirror, or the like is applicable. Among these, it is preferable to use a corner cube prism in view of parallelism with incident light of reflected light. However, as long as the reference light can be reflected, the present invention is not limited to the above, and may be constituted by, for example, a delay line (similar to an optical path changing means such as a piezo tube delay line described later).

  The driving means 142 for driving the reference light reflecting means 140 is preferably constituted by, for example, a stepping motor that is driven in a direction parallel to the incident direction of the reference light (arrow direction in FIG. 1). If the stepping motor is used, the moving distance of the reference light reflecting means 140 can be easily detected by the motor driving pulse. However, the optical path length changing means is not limited to the motor as long as the optical path length of the light reflected from the reference light reflecting means can be changed. For example, a voice coil motor type delay line using a voice coil motor is used. In addition, the optical path length changing means may be constituted by a piezo tube type delay line, a linear motion stage type delay line, a laminated piezo type delay line, or the like.

  The light receiving means 150 is preferably configured using, for example, a photodiode in consideration of low cost and compactness. Specifically, for example, a PD (Photo Detector) using a Si photodiode, an InGaAs photodiode, a Ge photodiode, or the like is used. However, as long as the interference between the measurement light from the temperature measurement object T and the reference light from the reference light reflecting means 140 can be measured, the light receiving means is not limited to the above, and for example, an avalanche photodiode or a photomultiplier tube is used. 150 may be configured.

The reference light from the first splitter 120 is transmitted to the reference light irradiating position for irradiating the reference light reflecting means 140 through the reflected light transmitting means, for example, the collimated fiber F _z , and the second splitter 130. The first to n-th measurement lights from the first to n-th measurement light transmission means, for example, collimated fibers F _{1 to} F _n are transmitted to the measurement light irradiation position for irradiating the temperature measurement object T, respectively. It has become. The first to n-th measuring light transmission means is not limited to the collimating fibers F _{1 to} F _n , and for example, the collimating optical fibers F _{1 to} F _{n in} which a collimator is attached to the tip of the optical fiber. May be.

(The optical path length of the first to nth measurement lights)
The temperature measurement apparatus 100 shown in FIG. 1 is configured such that the optical path lengths from the second splitter 130 to the temperature measurement object T in the first to nth measurement lights are different from each other. Specifically, for example, when the lengths of the collimating fibers F _{1 to} F _n are the same, as shown in FIG. 1, the first to n-th measuring light transmission means, for example, the end faces of the collimating fibers F _{1 to} F _n , The measurement light irradiation positions are arranged so as to be shifted from the temperature measurement object T in directions substantially parallel to the irradiation direction. Further, when the collimator-equipped optical fibers F _{1 to} F _n are used as the _first to _n- th measurement light transmission means, the tip surfaces of the respective collimators are shifted from the temperature measurement object T in a direction substantially parallel to the irradiation direction. Arrange as follows. Incidentally, without shifting the collimator tip surface of the collimating fiber _F 1 to F _n of the distal end surface or optical with collimator fiber _F 1 to F _n, the length or lengths of optical fiber of each example collimate fiber _F 1 to F _n By changing the length, each optical path length from the second splitter 130 to the temperature measurement object T in the first to n-th measurement lights may be different.

  In the case where the first to nth measurement light transmission means are arranged shifted from the temperature measurement object T, the interference wave between the first to nth measurement light and the reference light measured at least for each measurement point. (See, for example, FIG. 3) must not overlap each other. For example, when a low-coherence light source is used as the light source 110, if the first to n-th measurement light transmission means are arranged at least the coherence length of the interference wave from the temperature measurement object T, the interference wave can be generated. Overlap can be prevented. Further, the positions where the first to n-th measurement light transmission means are disposed are determined in consideration of the thickness of the temperature measurement object, the rate of change of the thickness, the temperature range to be measured, the moving distance of the reference mirror, and the like. It is preferable to do. Specifically, for example, in the case of a silicon wafer having a thickness of about 0.7 mm, the moving distance of the reference mirror in the temperature range from room temperature to about 200 ° C. is about 0.04 mm. It is preferable to dispose the means from the temperature measurement object T by about 0.1 mm. Thereby, it is possible to prevent the interference wave at each measurement point from overlapping.

  On the other hand, FIG. 2 shows a temperature measuring apparatus 102 configured such that the optical path lengths of the first to n-th measuring lights to the temperature measuring object T are the same as a comparative example. In the temperature measuring apparatus 102 shown in FIG. 2, an optical communication multiplexer (OADM: optical add / drop multiplexer) 132 is used instead of the second splitter 130, and the first to n-th measurement light is converted to the optical communication multiplexer 132. 1 is different from that shown in FIG. 1 in that the temperature is measured at each measurement point while switching between the two.

  As described above, if the optical path lengths of the first to n-th measurement lights to the temperature measurement target T are the same, the first to n-th measurement light is temporarily used by using the second splitter 130 shown in FIG. Even if the measurement light is demultiplexed, the interference waveforms of the first to n-th measurement light reflected from the temperature measurement object T and the reference light overlap and cannot be distinguished. Therefore, the interference wave at each measurement point cannot be measured by scanning the reference light reflecting means 140 such as a reference mirror once.

  For this reason, in the temperature measuring apparatus 102 shown in FIG. 2, the reference light reflecting means 140 is scanned by the number of measurement points for each measurement point while the first to nth measurement lights are switched by the optical communication multiplexer 132. The temperature must be measured at each measurement point. In this case, there is a problem that the temperature measurement takes time and effort.

  In this regard, in the temperature measuring apparatus 100 shown in FIG. 1, the optical path lengths from the second splitter 130 to the temperature measuring object T in the first to n-th measuring lights are different from each other. By adjusting to, the interference waveforms of the first to nth measurement beams and the reference beam can be detected by being shifted from each other. Thereby, since the interference waveforms of the first to n-th measurement light and the reference light do not overlap, the measurement in which each of the first to n-th measurement lights is irradiated only by scanning the reference light reflecting means 140 such as a reference mirror once. Point interference waves can be detected at once. For this reason, the time required for temperature measurement can be shortened as much as possible.

  As described above, according to the temperature measurement device according to the present embodiment, the second splitter 130 configured by an optical fiber coupler or the like is provided to split the measurement light into the first to nth measurement lights, The temperature of a plurality of measurement points can be detected at a time with a simple configuration in which the first to n-th measurement light transmission units are arranged so that the optical path lengths of the first to n-th measurement lights are different. Thereby, the temperature measurement time can be shortened as much as possible while suppressing an increase in cost as much as possible.

  The intensity ratio between the measurement light split by the first splitter 120 and the reference light is, for example, n: 1, and the intensities of the first to n-th measurement lights split by the second splitter 130 are For example, it is 1 / n of the intensity of the measurement light. Thereby, since the intensity | strength of the 1st-n-th measurement light and reference light becomes the same intensity | strength, the interference waveform which can measure a peak-to-peak width etc. easily for every measurement light is obtained. The intensity of each light is not limited to this. For example, the intensity of the first to nth measurement lights may be different. As a result, the peak size of the interference waveform is different at each measurement point, so that it is easy to distinguish which measurement point is the interference waveform.

  Further, a shutter means (illustrated) that can turn on / off the irradiation of the first to n-th measurement light to the temperature measurement object T between each measurement light irradiation position of the first to n-th measurement light and the temperature measurement object T. No) may be provided. For example, when it is desired to detect only the temperature of the first measurement point, only the first measurement light is turned on by the shutter means, and the other second to nth measurement lights are turned off, and the reference light reflecting means (for example, reference mirror) By driving 140, only the interference wave between the first measurement light and the reference light can be obtained. It is also possible to turn on the measurement light at a plurality of measurement points by the shutter means and turn off the measurement light at other measurement points. Therefore, by providing the shutter means, it is possible to perform temperature measurement by irradiating measurement light to a desired measurement point.

(Operation of temperature measuring device)
In the temperature measuring apparatus 100 having such a configuration, the light from the light source 110 is incident on the terminal a of the first splitter 120 and is split into two by the first splitter 120 to the terminal b and the terminal c. Among these, the light from the terminal b (measurement light) enters the second splitter 130 and is demultiplexed by _n into the terminals e _{1 to} en by the second splitter 130. First through n measurement light from these terminals e ₁ to e _n is irradiated to a temperature measurement target T such as a wafer having a layer structure through the first to n measuring optical transmission means such as collimating fiber respectively , Reflected by the surface, boundary surface and back surface of each layer.

  On the other hand, the light (reference light) from the terminal c is emitted from a reference light transmission means, for example, a collimated fiber, and reflected by a reference light reflection means (for example, a reference mirror) 140. Then, each reflected light of the first to n-th measurement lights enters the first splitter 120 via the second splitter 130 and is recombined with the reflected light of the reference light, for example, Si photodiode, InGaAs photo An interference waveform is detected by the light receiving means 150 constituted by a PD using a diode, a Ge photodiode or the like.

(Specific example of interference waveform between measurement light and reference light)
Here, a specific example of the interference waveform obtained by the temperature measuring apparatus 100 is shown in FIG. FIG. 3 shows a case where the first and second measurement beams divided by the second splitter 130 are irradiated to the measurement points P ₁ and P ₂ in the surface of the temperature measurement object, for example, the wafer, respectively. The interference waveform of the 1st and 2nd measurement light and reference light is shown. 3A shows the interference waveform before the temperature change, and FIG. 3B shows the interference waveform after the temperature change. In FIG. 3, the vertical axis represents the interference intensity, and the vertical axis represents the moving distance of the reference mirror.

  The light source 110 is a low-coherence light source as described above. According to the low-coherence light source, since the coherence length of the light from the light source 110 is short, usually strong interference occurs in a place where the optical path length of the measurement light and the optical path length of the reference light coincide with each other, and interference occurs in other places. It has the characteristic of being substantially reduced. For this reason, the reference light reflecting means (for example, reference mirror) 140 is driven before and after the reference light irradiation direction, for example, and the optical path length of the reference light is changed to thereby change the surface and the back surface of the wafer as the temperature measurement object T. In addition, if there are further layers inside the wafer, the measurement light reflected by these refractive index differences and the reference light interfere with each other. As a result, it is possible to measure the temperature in the depth direction of the wafer.

According to FIGS. 3A and 3B, when the reference light reflecting means (for example, the reference mirror) 140 is scanned in one direction, _first , the surface of the measurement point P1 of the wafer, which is the temperature measurement object T, interference between the reference light appears, then the interference wave of the reference light appears and the measurement point P ₂ of the surface. With reference light reflecting means 140 further continue to scan appears interference with the rear surface of the measuring points P ₁ of the wafer and the reference light, then interference between the rear surface and the reference beam of the measuring points P ₂ appears. Thus, the interference waves on the front and back surfaces of the measurement points P ₁ and P ₂ irradiated with the first and second measurement lights can be detected at a time only by scanning the reference light reflecting means 140 once.

(Temperature measurement method based on interference light)
Next, a method for measuring the temperature based on the interference wave between the measurement light and the reference light will be described. As a temperature measurement method based on the interference wave, for example, there is a temperature conversion method using an optical path length change based on a temperature change. Here, a temperature conversion method using the positional deviation of the interference waveform will be described.

  When the temperature measurement target T such as a wafer is heated by a heater or the like, the temperature measurement target T expands and the refractive index changes, so that the position of the interference waveform shifts before and after the temperature change, causing interference. The peak-to-peak width of the waveform changes. At this time, if there is a temperature change at each measurement point, the position of the interference waveform shifts at each measurement point, and the peak-to-peak width of the interference waveform changes. A temperature change can be detected by measuring the peak-to-peak width of the interference waveform at each measurement point. For example, in the case of the temperature measuring apparatus 100 as shown in FIG. 1, the peak-to-peak width of the interference waveform corresponds to the moving distance of the reference light reflecting means (for example, the reference mirror) 140. By measuring the moving distance of the reference mirror, the temperature change can be detected.

Hereinafter, the temperature measurement method will be described more specifically with the thickness of the wafer as the temperature measurement object T measured in FIG. 3 being d and the refractive index being n. When each of the measurement points P ₁ and P ₂ is irradiated with the first and second measurement lights and the reference mirror is scanned in one direction, it is reflected at the front and back surfaces of the measurement points P ₁ and P _{2 on} the wafer. Therefore, due to the interference between the reflected light of the first and second measurement lights and the reference light, two interference waveforms are obtained at each measurement point P ₁ and P _{2 as} shown in FIG. It is done.

At this time, when the wafer is heated by, for example, a heater, the temperature of the wafer rises, and the wafer expands due to the temperature change, and the refractive index also changes. As a result, as shown in FIG. 3B, the peak position of the remaining one interference waveform is shifted for each of the measurement points P ₁ and P ₂ out of the two interference waveforms with reference to one interference waveform. , The peak-to-peak width of the interference waveform changes. For example, in FIG. 3B, with reference to the front surface interference waveform at each measurement point P ₁ and P _{2 on} the wafer, the position of the back surface interference waveform is t ₁ , respectively, as compared to the case of FIG. It is shifted by t _2. Thereby, the peak-to-peak widths of the interference waveforms at the measurement points P ₁ and P ₂ change from W ₁ and W ₂ shown in FIG. 3A to W ₁ ′ and W ₂ ′ shown in FIG. .

  Such a shift in the peak position of the interference waveform depends on the linear expansion coefficient α specific to each layer for the thickness d, and mainly depends on the temperature coefficient β of the refractive index change specific to each layer for the change of the refractive index n. To do. It is known that the temperature coefficient β of the refractive index change also depends on the wavelength.

Accordingly, when the wafer thicknesses d ₁ ′ and d ₂ ′ after the temperature change at the respective measurement points P ₁ and P ₂ are expressed by mathematical expressions, the following mathematical expressions (1-1) and (1-2) are obtained. In the following mathematical formulas (1-1) and (1-2), ΔT ₁ and ΔT ₂ indicate temperature changes at the measurement points P ₁ and P ₂ , and α and β are changes in the linear expansion coefficient and refractive index of the wafer. The temperature coefficient is shown. Further, d ₁ and n ₁ indicate the thickness and refractive index of each measurement point P ₁ before the temperature change, respectively, and d ₂ and n ₂ indicate the thickness and refraction of each measurement point P ₂ before the temperature change, respectively. Shows the rate. In the initial state before heat is applied to the wafer, the wafer thickness d and refractive index n can be assumed to be the same for all measurement points P ₁ and P ₂ in the same wafer plane. d = d ₁ = d ₂ and n = n ₁ = n ₂ can be set.

d ₁ ′ = d ₁ · (1 + αΔT ₁ ), n ₁ ′ = n ₁ · (1 + βΔT ₁ ) (1-1)

d ₂ ′ = d ₂ · (1 + αΔT ₂ ), n ₂ ′ = n ₂ · (1 + βΔT ₂ ) (1-2)

As shown in the above mathematical formulas (1-1) and (1-2), the optical path lengths of the first and second measurement lights that pass through the measurement points P ₁ and P ₂ of the wafer change due to temperature changes. The optical path length is generally expressed as a product of the thickness d and the refractive index n. Accordingly, the optical path lengths of the first and second measurement light beams that pass through the measurement points P ₁ and P ₂ before the temperature change are L ₁ and L _2, and the temperatures at the measurement points P ₁ and P ₂ are ΔT ₁ and ΔT ₂ , respectively. Assuming that the optical path length after the change is L ₁ ′ and L ₂ ′, L ₁ and L ₁ ′ are as shown in the following equation (1-3), respectively, and L ₂ and L ₂ ′ are As shown in Formula (1-4).

L ₁ = d ₁ · n ₁ , L ₁ ′ = d ₁ ′ · n ₁ ′ (1-3)

L ₂ = d ₂ · n ₂ , L ₂ ′ = d ₂ ′ · n ₂ ′ (1-4)

Therefore, the difference (L ₁ ′ −L ₁ , L ₂ ′ −L ₂ ) before and after the temperature change of the optical path length of the first and second measurement light at each measurement point P ₁ , P ₂ is expressed by the above equation (1-1). ), (1-2), (1-3), and (1-4), the following formulas (1-5) and (1-6) are obtained. In addition, in the following mathematical formulas (1-5) and (1-6), α · β << α and α · β << β are taken into consideration and the minute terms are omitted. In the initial state before heat is applied to the wafer, the wafer thickness d and refractive index n can be assumed to be the same for all measurement points P ₁ and P ₂ in the same wafer plane. L = d · n = L ₁ = L ₂ can be set.

L ₁ '-L ₁ = d ₁ ' · n ₁ '-d ₁ · n ₁ = d ₁ · n ₁ · (α + β) · ΔT ₁
= L ₁ · (α + β) · ΔT ₁ (1-5)

L ₂ '-L ₂ = d ₂ ' · n ₂ '-d ₂ · n ₂ = d ₂ · n ₂ · (α + β) · ΔT ₂
= L ₂ · (α + β) · ΔT ₂ (1-6)

Here, the optical path length of the measurement light at each measurement point corresponds to the peak-to-peak width of the interference waveform with the reference light. For example, the optical path lengths L ₁ and L ₂ of the first and second measurement lights at the measurement points P ₁ and P ₂ before the temperature change are the inter-peak widths W ₁ and W _{2 of the} interference waveform shown in FIG. The optical path lengths L ₁ ′ and L ₂ ′ of the first and second measurement lights at the measurement points P ₁ and P ₂ after the temperature change are respectively the peak-to-peak widths of the interference waveform shown in FIG. It corresponds to W ₁ ′ and W ₂ ′. Therefore, the peak-to-peak width of the interference waveform with the reference light at each measurement point can be measured by the moving distance of the reference mirror according to the temperature measuring device as shown in FIG.

Therefore, if the coefficient of linear expansion α of the wafer and the temperature coefficient β of the refractive index change are examined in advance, the above formula (1-5) is obtained by measuring the peak-to-peak width of the interference waveform with the reference light at each measurement point. , (1-6) can be converted into the temperatures of the respective measurement points P ₁ and P ₂ .

  Thus, when converting the interference wave to the temperature, the optical path length expressed between the peaks of the interference waveform varies depending on the linear expansion coefficient α and the temperature coefficient β of the refractive index change as described above. It is necessary to investigate in advance α and the temperature coefficient β of the refractive index change. In general, the linear expansion coefficient α and the temperature coefficient β of refractive index change of a material including a wafer may depend on the temperature depending on the temperature zone. For example, the coefficient of linear expansion α generally does not change so much in the temperature range of about 0 to 100 ° C., so it can be regarded as constant. However, in the temperature range of 100 ° C. or higher, the temperature increases depending on the material. Since the rate of change may be large, the temperature dependency cannot be ignored in such a case. Similarly, the temperature dependence β of the refractive index change may not be negligible depending on the temperature range.

For example, in the case of silicon (Si) constituting a wafer, it is known that the linear expansion coefficient α and the temperature coefficient β of refractive index change can be approximated by, for example, a quadratic curve in a temperature range of 0 to 500 ° C. For details, see JAMcCaulley, VMDonnelly et al. (JAMcCaulley, VMDonnelly, M. Vernon, and I. Taha,
"Temperature dependence of the near-infrared refractive index of
silicon, gallium arsenide, and indium phosphide "Phy. Rev. B49, 7408, 1994).

  Thus, since the linear expansion coefficient α and the temperature coefficient β of the refractive index change depend on the temperature, for example, the linear expansion coefficient α and the temperature coefficient β of the refractive index change corresponding to the temperature are examined in advance and the values are taken into consideration. If the temperature is converted, it can be converted to a more accurate temperature.

(Example of conversion from interference wave to temperature)
Based on the principle as described above, a specific example of converting an interference wave to a temperature will be described in the case of measuring the temperature of a wafer as a temperature measurement object. First, prior to measuring the temperature of the wafer, the linear expansion coefficient α and the temperature coefficient β of the refractive index change for a plurality of temperature zones are examined, and the linear expansion coefficient α and the temperature coefficient β of the refractive index change are determined. And stored in a memory or the like as temperature conversion reference data.

Specifically, for example, while measuring the temperature of the reference wafer, the measurement light is irradiated to a certain measurement point, and the optical path length of the measurement light at temperatures T _m (m = 1, 2,...) In a plurality of temperature zones. L _m (= d _m · n _m ), that is, the peak-to-peak width of the interference waveform is measured.

Here, when the optical path length of the measurement light at the temperature T _m is L _m and the optical path length of the measurement light when the temperature is changed to the temperature T _{m + 1} is L _{m + 1} , the optical path lengths L _m and L _{m + 1} are Similar to the above mathematical formulas (1-5) and (1-6), there is a relationship such as the following mathematical formula (1-7). When this mathematical formula (1-7) is arranged, the following mathematical formula (1-8) is obtained. can get.

L _{m + 1} −L _m
= D _{m + 1} · n _{m + 1} −d _m · n _m
= D _m · n _m · (α + β) _m · (T _{m + 1} −T _m )
... (1-7)

(Α + β) _{m
= (D m + 1 · n} m + 1 -d m · n m) / (d m · n m · (T m + 1 -T m))
_{= (L m + 1 -L m} ) / L m · (T m + 1 -T m)
... (1-8)

The optical path length L _m (= d _m · n _m ) of the measurement light at the temperature T _m (m = 1, 2,...) Thus measured, that is, the peak of the interference waveform at the temperature T _m (m = 1, 2,...). Based on the measured value of the interspace, (α + β) _m is obtained using the above formula (1-8), and T _m and (α + β) _m are stored in advance in the memory as reference data for temperature conversion.

  When the temperature can be approximated by a quadratic function such as silicon as in the case of silicon as described above, the mathematical formula is stored, and the linear expansion coefficient α, refraction of the wafer is calculated from the mathematical formula as necessary. The temperature coefficient β of the rate change may be calculated.

When actually measuring the temperature of the wafer, first, before starting the wafer processing, the wafer is measured based on the interference waveform with the reference light obtained by irradiating the measurement light to a certain measurement point. The initial optical path length L _f (= d _f · n _f ) is measured and stored in a memory or the like. When processing a plurality of wafers, the initial optical path length L _f (= d _f · n _f ) is measured for each wafer. This is because an actual wafer may vary in thickness from wafer to wafer, and the temperature of the wafer is measured more accurately by converting the temperature according to the thickness inherent to the wafer.

Accordingly, the optical path length L _f of the initial value of the wafer, it is necessary to measure when not yet the temperature of the wafer is changed. That is, the temperature changes when, for example, the wafer is placed on the placement surface of the lower electrode (susceptor) in the processing chamber, and at least must be measured by this time.

Specific examples, when measured at the outside of the optical path length L _f of example, the substrate processing apparatus of the initial value of the wafer is used as data at the time of temperature conversion keep in a database of measured values for each the wafer. The use of optical path length L _f of the initial value of the wafer when measured in the substrate processing apparatus, in the before being loaded into the processing chamber for processing a wafer for example, as a wafer transfer chamber (load lock chamber When the wafer is loaded into the processing chamber, the wafer is supported by lifter pins that protrude above the mounting surface of the lower electrode (susceptor), for example. Measurement is performed before the wafer is placed on the placement surface of the lower electrode (susceptor) in the processing chamber while the lifter pins on which the wafer is placed are moving down.

Next, when measuring the temperature of the wafer carried into the processing chamber, the temperature is converted as follows. First, when detecting the temperature T _x of each measurement point, the optical path length L _x (= d _x · n _x ) is measured based on the interference waveform obtained by irradiating the measurement light to each measurement point. The wafer temperature T _x is calculated as follows using the initial optical path length L _f (= d _f · n _f ) and (α + β) _f at the temperature T _f in the temperature conversion reference data. . That is, similarly to the above formula (1-8), the wafer temperature T _x is calculated based on the formula (1-10) obtained by arranging the following formula (1-9).

L _x −L _f = d _x · n _x −d _f · n _f = d _f · n _f · (α + β) _f · (T _x −T _f )
... (1-9)

_{T x = (d x · n} x -d f · n f) / d f · n f · (α + β) f + T f
_{= L x -L f / L f} · (α + β) f + T f
... (1-10)

From the next wafer temperature measurement, for example, T _x ≡T _m ′, the optical path length at that time is measured, and the measured value is newly set as L _x (= d _x · n _x ). The _'(α + _{β) m at'} temperatures the T _m in this case, the value measured at a temperature range including, for example, T _{m 'on} the basis of the reference data for the temperature conversion T _m, replaced by (α + β) _m, newly measured to calculate the temperature should do as _{T x.} Thereafter, the temperature T _x of the wafer can be detected by repeating this process.

As described above, the linear expansion coefficient α and the temperature coefficient β of the refractive index change can be ignored depending on the temperature range. (Α + β) _m may be used to calculate the temperature T _x of all the wafers. In this case, may be calculated for all temperature T _x of the wafer using the same within the temperature range the average value of (α + β) _m as (α + β) _{m '.}

  Note that the temperature measurement method based on the interference wave between the measurement light and the reference light is not limited to the method described above. For example, a method using an absorption intensity change based on a temperature change may be used. A method in which an optical path length change based on the above and an absorption intensity change based on a temperature change are combined may be used.

(Specific example of temperature measurement system using temperature measurement device)
Next, a specific example of a temperature measurement system for a substrate processing apparatus using the temperature measurement apparatus according to the present embodiment will be described with reference to the drawings. FIG. 4 is a diagram showing a schematic configuration of the temperature measurement system. Here, a case will be described in which the temperature measuring apparatus according to the present embodiment is applied to the temperature measurement of a substrate to be processed such as a wafer Tw in a substrate processing apparatus such as an etching apparatus.

  The temperature measurement system shown in FIG. 4 is roughly composed of a temperature measurement device 200 and a substrate processing device 300. In the temperature measuring apparatus 200 shown in FIG. 4, the light source 110 shown in FIG. 1 is constituted by a low-coherence light source, for example, an SLD 210 having low coherence, and the first splitter 120 is constituted by, for example, a 2 × 2 optical fiber coupler 220. The second splitter 130 is constituted by, for example, a 1 × 3 optical fiber coupler 230, the light receiving means 150 is constituted by, for example, a PD 250 using a Ge photodiode, the reference light reflecting means 140 is constituted by, for example, a reference mirror 240, The driving means 142 is constituted by a stepping motor 242 that drives the reference mirror 240, for example.

Reference light from the optical fiber coupler 220 is adapted to be transmitted as reflected optical transmission means such as to the reference beam irradiating position for irradiating the reference mirror 240 through a collimating fiber F _z, from the optical fiber coupler 230 Each of the first to third measurement lights reaches the measurement light irradiation position for irradiating the wafer Tw, which is the temperature measurement object T, via the collimating fibers F _{1 to} F ₃ as the _first to _third measurement light transmission units, respectively. It is supposed to be transmitted.

  As shown in FIG. 4, the substrate processing apparatus 300 includes a processing chamber 310 that performs a predetermined process such as an etching process or a film forming process on the wafer Tw. In the processing chamber 310, a transfer chamber 320 for transferring the wafer Tw into and out of the processing chamber 310 is connected via a gate valve 330. An upper electrode 350 is provided inside the processing chamber 310, and a lower electrode 340 is disposed opposite to the upper electrode 350. The upper electrode 350 and the lower electrode 340 are configured to be able to apply a predetermined high frequency power. For example, an electrostatic chuck (not shown) that electrostatically attracts the wafer Tw is provided on the lower electrode 340. A number of holes are formed in the upper electrode 350 so that, for example, a processing gas is uniformly introduced onto the wafer surface. A predetermined high frequency power is applied to the upper electrode 350 and the lower electrode 340.

  In such a substrate processing apparatus 300, the wafer Tw is loaded into the transfer chamber 320 from, for example, an external wafer cassette by a transfer arm, and waits. When the processing of the previous wafer Tw is completed and the preparation for the next wafer processing is completed, the gate valve 330 is opened, and the wafer Tw is loaded / unloaded between the transfer chamber 320 and the processing chamber 310. That is, the processed wafer Tw and the next wafer Tw that has been waiting are exchanged by a two-stage transfer arm (not shown). The wafer Tw carried into the processing chamber 310 is placed on the lower electrode 340 and electrostatically adsorbed, and then high frequency power is applied to the upper electrode 350 and the lower electrode 340, and the upper electrode 350 and the processing chamber 310 receive the high frequency power. A predetermined processing gas is introduced into the inside. As a result, the processing gas introduced from the upper electrode 350 is turned into plasma, and the surface of the wafer Tw is subjected to, for example, an etching process.

Collimated fibers F _{1 to} F ₃ for transmitting the first to third measurement lights are disposed in the transfer chamber 320 and the processing chamber 310 of the substrate processing apparatus 300. Specifically, the collimating fiber F ₁ is disposed at a measurement light irradiation position that irradiates the wafer Tw waiting in the transfer chamber 320 with the first measurement light. At this time, for example, the first measurement light is irradiated to the central portion of the wafer Tw as the first measurement point. Note that the position of the measurement point is not necessarily the center of the wafer, and the number of measurement points is not necessarily one.

The collimating fibers F ₂ and F ₃ irradiate measurement light that irradiates the wafer Tw placed on the lower electrode 340 through the through holes 342 and 344 provided in the lower electrode 340, respectively. Arranged in position. At this time, for example, the end of the wafer Tw is irradiated with the second measurement light as the second measurement point, and the center of the wafer Tw is irradiated with the third measurement light as the third measurement point. Note that the positions of the measurement points do not necessarily have to be at the center and end of the wafer, and the number of measurement points is not limited to two.

These collimating fibers F _{1 to} F ₃ are, for example, front end surfaces of the collimating fibers F _{1 to} F ₃ so that the optical path lengths from the optical fiber coupler 230 to the wafer Tw in the first to third measurement lights are different from each other. Are arranged shifted from the wafer Tw, which is the temperature measurement object T. As a result, the interference wave between the first to third measurement beams and the reference beam for the wafer Tw in the transfer chamber 320 and the processing chamber 310 can be detected by a single scan of the reference mirror 240. Temperature measurement can be performed on the wafer Tw in the transfer chamber 320 as well as the wafer Tw in 310 at a time.

Further, in the temperature measurement system as shown in FIG. 4, the measurement light can be irradiated not only on the wafer Tw in the processing chamber 310 but also on the wafer Tw waiting in the transfer chamber 320. The measured value of the optical path length (for example, the peak width of the interference waveform) of the first measurement light measured on the wafer Tw before processing waiting at (1) is the initial optical thickness unique to the wafer Tw, ie, the initial value of the wafer Tw. Can be used as the optical path length L _f (= d _f · n _f ).

For example, the optical path length of the first measurement light measured at the first measurement point when the wafer Tw is waiting in the transfer chamber 320 in an unprocessed stage before being transferred into the processing chamber 310 is the wafer Tw. The initial optical path length L _f is stored in a memory or the like. Thereafter, the wafer Tw is carried into the processing chamber 310 from the transfer chamber 320, and the second and second measurement light beams are measured based on the optical path lengths of the second and third measurement lights measured at the second and third measurement points in the processing chamber 310. 3 in measuring the temperature of the measurement points may be utilized optical path length L _f of the initial value of the wafer Tw.

  This enables the optical path length of each measurement point to be adjusted according to the thickness of the wafer even if the thickness of the wafer varies, for example, as compared to the case where the standard optical path length of the wafer is used as an initial value. Since the temperature can be converted, the temperature of the wafer can be measured more accurately.

  In particular, when continuously processing a plurality of wafers Tw, according to the temperature measurement system as shown in FIG. 4, the measurement of the second and third measurement points of the wafer Tw in the processing chamber 310 and the transfer chamber 320 are performed. The measurement of the first measurement point of another wafer Tw waiting can be performed at a time. At this time, the measurement result of another wafer Tw waiting in the transfer chamber 320 is stored in a memory or the like as the initial optical path length of the wafer Tw, and the wafer Tw is transferred into the processing chamber 310. In this case, it may be used for temperature conversion when the second and third measurement points are measured in the processing chamber.

  In this way, while measuring the temperature of the wafer Tw, it is possible to measure up to the optical path length of the initial value of the next wafer Tw at a time, so that the optical path length of the initial value of the wafer Tw is separately measured in advance. Therefore, temperature measurement can be performed efficiently and measurement time can be shortened.

(Specific example of control system using temperature measuring device)
Next, a specific example when the temperature measuring device according to the present invention is used in a control system for a substrate processing apparatus will be described with reference to the drawings. FIG. 5 is a diagram showing a schematic configuration of a specific example of the control system of the substrate processing apparatus.

The control system shown in FIG. 5 is roughly composed of a temperature measurement device 200, a substrate processing device 300, and a control device 400. The configuration of the temperature measuring apparatus 200 shown in FIG. 5 is almost the same as that shown in FIG. The optical fiber coupler 230 shown in FIG. 5 uses the measurement light from the optical fiber coupler 220 as well as the first to third measurement lights, and the fourth measurement light for measuring the focus ring (FR) 360 in the processing chamber 310. 4 differs from that shown in FIG. Fourth measurement light from the optical fiber coupler 220, the fourth through the measuring optical transmission means such as a collimator fiber F _4, to be transmitted to the measuring beam irradiating position for irradiating the focus ring 360 is a temperature measurement target T It has become.

These collimating fibers F _{1 to} F ₃ are optical path lengths from the optical fiber coupler 230 to the wafer Tw that is the temperature measurement object T in the first to third measurement lights, and the collimating fibers F ₄ are the fourth For example, the tip surfaces of the collimating fibers F _{1 to} F ₄ are shifted from each temperature measurement object so that the optical path lengths from the optical fiber coupler 230 to the focus ring 360 that is the temperature measurement object T are different from each other. Arrange. Thereby, the interference wave between the first to fourth measurement light and the reference light for the wafer Tw and the focus ring 360 in the transfer chamber 320 and the processing chamber 310 can be detected by a single scan of the reference mirror 240. Therefore, temperature measurement of these first to fourth measurement points can also be performed at a time.

The configuration of the substrate processing apparatus 300 shown in FIG. 5 is substantially the same as that shown in FIG. A focus ring 360 is provided on the lower electrode 340 in the processing chamber 310 shown in FIG. 5 so as to surround the periphery of the wafer Tw. For example, an electrode may be incorporated in the focus ring 360, and the temperature of the focus ring 360 may be controlled by applying a voltage to the electrode. Further, a gas passage may be formed in the focus ring 360, and a backside gas (for example, He, N _2, etc.) may be supplied to the rear surface of the end portion of the wafer Tw through the gas passage.

The lower electrode 340 shown in FIG. 5 is provided with a through hole 346 for measuring the temperature of the focus ring 360 below the focus ring 360. A collimating fiber F ₄ is disposed at a measurement light irradiation position where the fourth measurement light from the temperature measurement device 200 is irradiated onto the focus ring 360 through the through hole 346.

An electrostatic chuck for electrostatically attracting the wafer Tw is provided on the lower electrode 340. An electrode plate is built in the electrostatic chuck, and a voltage can be applied to the electrode plate. The electrostatic chuck is formed with gas passages for backside gas (for example, He, N _2, etc.) supplied toward the back surface of the wafer Tw at the center and at the end. In addition, a refrigerant passage for circulating a refrigerant for controlling the temperature of the lower electrode 340 is formed in the lower electrode 340. In FIG. 5, the illustration of the electrostatic chuck, the refrigerant passage, the gas passage of the backside gas, etc. is omitted in order to make the configuration for temperature measurement easier to see.

  The control device 400 receives a CPU (Central Processing Unit) 410 constituting the main body of the control device, a stepping motor 242 for driving the reference mirror 240 via a motor driver 420, and a buffer 450 for input. A / D conversion in which the output signal from the PD 250 (the measurement result of the interference wave obtained by irradiating the measurement light) and the control signal (for example, the drive pulse) output from the motor controller 430 are input after being converted from analog to digital. 460, various controllers 470 for controlling each part of the substrate processing apparatus 300, and the like. The control device 400 may measure the moving position and moving distance of the reference mirror 240 based on a control signal (for example, a drive pulse) of the stepping motor 242 output from the motor controller 430. A linear encoder is attached to the motor 242. The moving position and moving distance of the reference mirror 240 may be measured based on the output signal from the linear encoder. Further, the motor 242 is not limited to a stepping motor, and a voice coil motor or the like may be used.

As the various controllers 470, for example, ESC (electrostatic
A chuck (electrostatic chuck) system controller 472 and an FR (focus ring) system controller 474 are provided. The ESC system controller 472 includes a voltage applied to the electrostatic chuck (ESC), a gas flow rate and gas pressure of the backside gas supplied to the wafer Tw via the electrostatic chuck, and a refrigerant flow path formed in the lower electrode 340. The temperature of the refrigerant to be circulated is controlled.

  The FR controller 474 controls the voltage applied to the focus ring 360, the gas flow rate and gas pressure of the backside gas supplied to the wafer Tw via the focus ring 360, and the like.

  Here, the operation of the control system shown in FIG. 5 will be described. The control device 400 controls each part of the substrate processing apparatus 300 according to the measurement result while performing temperature measurement at a plurality of measurement points in the focus ring 360 and the wafer Tw surface by the temperature measurement device 200. The in-plane temperature of Tw can be controlled.

  For example, when measuring the temperature of the wafer Tw, the control device 400 drives and controls the stepping motor 242 by feedback control while monitoring a control signal (for example, a drive pulse) output from the motor controller 430. The reference mirror 240 is driven. As a result, the first to fourth measurement lights are irradiated onto the measurement points of the wafer Tw and the focus ring 360, and the output from the PD 250, which is the measurement result of the interference wave between the reflected light and the reference mirror 240, is output from the control device 400. Is input via the A / D converter 460.

  Then, the control device 400 stores, for example, the movement position of the reference mirror 240 at the peak position of the interference wave with the reference light of each measurement light based on the control signal (drive pulse) of the stepping motor 242 that drives the reference mirror 240. And the peak width of the interference wave of each measurement light, that is, the optical path length of each measurement light, is measured as the movement distance of the reference mirror 240. Based on the measured value of the peak width of the interference wave of each measurement light, the temperature at each measurement point of the wafer Tw and the focus ring 360 is calculated.

  The control device 400 controls the temperature of the wafer Tw by controlling the voltage applied to the electrostatic chuck by the ESC system controller 472 according to the temperature measurement result of the wafer Tw and the focus ring 360, or the FR system. The process at the edge of the wafer Tw is controlled by controlling the voltage applied to the focus ring 360 by the controller 474. Thereby, temperature control of wafer Tw can be performed appropriately.

  In particular, the applied voltage to the electrostatic chuck controlled by the ESC controller 472, the gas flow rate and pressure of the backside gas supplied to the wafer Tw via the lower electrode 340, and the refrigerant circulating in the lower electrode 340 Control parameters such as temperature, voltage applied to the focus ring 360 controlled by the FR controller 474, control parameters such as the gas flow rate and gas pressure of the backside gas supplied to the wafer Tw via the focus ring 360 are as follows: It directly affects the in-plane temperature of the wafer Tw. In addition, according to the temperature measuring apparatus 200 according to the present invention as shown in FIG. 4, the in-plane temperature of the wafer Tw can be directly measured in a non-contact manner. By controlling the control parameter, for example, The in-plane temperature of the wafer Tw can be uniformly controlled according to the processing, the temperature at the center and the end of the wafer Tw can be controlled differently, and the in-plane temperature of the wafer Tw can be accurately and accurately controlled. it can.

As described above, according to the control system shown in FIG. 5, not only the wafer Tw but also the focus ring 360 has a simple configuration in which the collimating fiber F ₄ is also disposed on the focus ring 360 to transmit the fourth measurement light. Even in this case, temperature measurement can be performed at once as the temperature measurement object T, and the labor and time required for temperature measurement can be reduced as much as possible.

  In the control system shown in FIG. 5, the temperature measurement object T of the temperature measuring apparatus according to the present invention has been described as measuring the temperature of a part other than the wafer Tw, for example, the focus ring 360. Is not limited to the focus ring 360, and may be applied to temperature measurement of the upper electrode as described later, for example.

(Another example of a control system using a temperature measuring device)
Next, another specific example when the temperature measuring apparatus according to the present invention is applied to a control system for a substrate processing apparatus will be described with reference to the drawings. FIG. 6 is a diagram showing a schematic configuration of another specific example of the control system of the substrate processing apparatus. Here, a control system capable of measuring the temperature of the upper electrode provided in the processing chamber as the temperature measurement object T will be described. Accordingly, FIG. 6 shows the configuration of the upper electrode 350 in more detail, and the configuration of the lower electrode 340 in the transfer chamber 320 and the processing chamber 310 is simplified.

  The control system shown in FIG. 6 is roughly composed of a temperature measuring device 200, a substrate processing device 300, and a control device 400. Each of the temperature measuring device 200 and the control device 300 shown in FIG. 6 is configured in substantially the same manner as that shown in FIG. In the processing chamber 310 of the substrate processing apparatus 300 shown in FIG. 6, an upper electrode 350 and a lower electrode 340 are disposed to face each other. The lower electrode 340 and the upper electrode 350 are connected to high frequency power supplies 348 and 349 for applying predetermined high frequency power, respectively. An introduction pipe (not shown) for introducing a predetermined processing gas is provided on the electrode 350. A large number of discharge holes (not shown) are formed in the electrode plate Tu so that the processing gas introduced from the introduction pipe is uniformly discharged toward the wafer Tw placed on the lower electrode 340.

  The upper electrode 350 is configured to support an electrode plate Tu, which is a temperature measurement object T located at the lowermost part, with an electrode support 351. The electrode plate Tu is made of, for example, an aluminum material, and the electrode support 351 is made of, for example, a silicon material.

  The upper electrode 350 is provided with cooling means. This cooling means controls the temperature of the upper electrode 350 by, for example, forming a coolant channel formed in the electrode support 351 of the upper electrode 350 and circulating the coolant through the coolant channel. The refrigerant channel is formed in a substantially annular shape, and is divided into two systems, for example, an outer refrigerant channel 352 for cooling the outside of the upper electrode 350 and an inner refrigerant channel 354 for cooling the inner side. Formed. The outer refrigerant flow path 352 and the inner refrigerant flow path 354 are supplied from the supply pipe as indicated by the arrows shown in FIG. 6, flow through the respective refrigerant flow paths 352 and 354, and are discharged from the discharge pipe. It is configured to return to an external refrigerator (not shown) and circulate. The same refrigerant may be circulated in these two refrigerant flow paths, or different refrigerants may be circulated. Note that the cooling means for the upper electrode 350 is not limited to the one having the two refrigerant flow paths shown in FIG. 6, and may be one having only one refrigerant flow path, for example. You may provide the refrigerant | coolant flow path which branches.

  The electrode support 351 is provided with a low heat transfer layer 356 between an outer portion where the outer refrigerant channel 352 is provided and an inner portion where the inner refrigerant channel 354 is provided. Accordingly, heat is hardly transmitted between the outer part and the inner part of the electrode support 351 due to the action of the low heat transfer layer 356. Therefore, the refrigerant is controlled by the outer refrigerant channel 352 and the inner refrigerant channel 354, so that It is also possible to control the temperature so that the inner part is at a different temperature. Thus, the in-plane temperature of the upper electrode 350 can be controlled efficiently and accurately.

Collimated fibers F ₁ and F ₂ for transmitting the first and second measurement lights from the optical fiber coupler 230 in the temperature measuring device 200 are disposed on the upper electrode 350. Specifically, the collimating fibers F ₁ and F ₂ are respectively connected to the first and second measurement beams via through holes 358 and 359 formed at the center and end of the electrode support 351 of the upper electrode 350, respectively. Are arranged so as to irradiate the first and second measurement points of the electrode plate Tu.

The collimating fibers F ₁ and F ₂ have different optical path lengths from the optical fiber coupler 230 in the first and second measurement lights to the electrode plate Tu of the upper electrode 350 as the temperature measurement object T. For example, the tip surfaces of the collimating fibers F ₁ and F ₂ are arranged so as to be shifted from the respective temperature measurement objects. Accordingly, since the interference wave between the first and second measurement beams and the reference beam for the electrode plate Tu of the upper electrode 350 can be detected by a single scan of the reference mirror 240, these first and second measurement points can be detected. Temperature measurement can be performed at once.

  The control device 400 shown in FIG. 6 includes, for example, an inner refrigerant controller 510 and an outer refrigerant controller 520 as various controllers 470. The inner refrigerant controller 510 controls the temperature of the inner part of the upper electrode 350 by controlling the temperature and flow rate of the refrigerant circulated to the inner refrigerant flow path 354. The outer refrigerant controller 520 controls the temperature of the outer portion of the upper electrode 350 by controlling the temperature and flow rate of the refrigerant circulated to the outer refrigerant flow path 352.

  Here, the operation of the control system shown in FIG. 6 will be described. The control device 400 measures the temperature of a plurality of measurement points within the surface of the electrode plate Tu of the upper electrode 350 by the temperature measurement device 200, and in accordance with the measurement result, each part of the substrate processing apparatus 300, particularly the upper electrode 350. The temperature can be accurately and accurately controlled. As a result, the overall temperature of the upper electrode 350 can be controlled, or the temperature at the center and end of the upper electrode 350 can be controlled independently, so that the in-plane process characteristics of the wafer Tw can be accurately controlled. In addition, the stability of the substrate processing apparatus 300 can be improved.

  As described above, according to the present invention, the second splitter, for example, an optical fiber coupler that demultiplexes the measurement light from the light source by the number of necessary measurement lights is provided, and measurement light transmission means for transmitting each measurement light, for example, The temperature of a plurality of measurement points can be measured at a time with a simple configuration in which collimating fibers are simply arranged so that the optical path lengths of the respective measurement lights are different. As a result, the number of measurement points can be easily increased while minimizing the cost, and the labor and time required for temperature measurement can be reduced as much as possible.

  As mentioned above, although preferred embodiment of this invention was described referring an accompanying drawing, it cannot be overemphasized that this invention is not limited to the example which concerns. It will be apparent to those skilled in the art that various changes and modifications can be made within the scope of the claims, and these are of course within the technical scope of the present invention. Understood.

  The present invention can be applied to, for example, a temperature measurement device, a temperature measurement method, and a temperature measurement system for measuring the temperature of a semiconductor wafer, a liquid crystal substrate, and the like, and can be applied to a control system and a control method for controlling a substrate processing apparatus. .

It is a block diagram showing a schematic structure of a temperature measuring device concerning an embodiment of the present invention. It is a block diagram which shows schematic structure of the temperature measuring apparatus concerning a comparative example. It is a figure which shows the specific example of the interference wave of the measurement light and reference light which are obtained by the temperature measurement apparatus concerning the embodiment, The figure (a) is 1 of the interference wave before the temperature of a temperature measurement object changes. An example is shown and the figure (b) shows an example of the interference wave after the temperature of a temperature measuring object changes. It is a figure which shows schematic structure about the specific example of the temperature measurement system of the substrate processing apparatus using the temperature measurement apparatus concerning the embodiment. It is a figure which shows schematic structure about the specific example of the control system of the substrate processing apparatus using the temperature measuring device concerning the embodiment. It is a figure which shows schematic structure about the other specific example of the control system of the substrate processing apparatus using the temperature measuring device concerning the embodiment. It is a figure for demonstrating the principle of the conventional temperature measuring apparatus. It is the figure which showed notionally the interference waveform measured by the temperature measuring apparatus shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Temperature measuring device 102 Temperature measuring device 110 Light source 120 1st splitter 130 2nd splitter 132 Multiplexer for optical communication 140 Reference light reflecting means 142 Drive means 150 Light receiving means 200 Temperature measuring device 220 Optical fiber coupler 230 Optical fiber coupler 240 Reference mirror 242 Motor 300 Substrate processing apparatus 310 Processing chamber 320 Transfer chamber 330 Gate valve 340 Lower electrode 342 Through hole 344 Through hole 346 Through hole 348 High frequency power source 349 High frequency power source 350 Upper electrode 351 Electrode support 352 Outer refrigerant channel 354 Inner refrigerant channel 356 Low heat transfer layer 358 Through-hole 359 Through-hole 360 Focus ring 400 Controller 410 CPU
420 motor driver 430 motor controller 450 buffer 460 A / D converter 470 various controllers 472 ESC system controller 474 FR system controller 510 inner refrigerant controller 520 outer refrigerant controller

Claims (20)

A light source,
A first splitter for splitting light from the light source into light for temperature measurement and reference light;
A second splitter for further splitting the measurement light from the first splitter into n first to n-th measurement lights;
Reference light reflecting means for reflecting reference light from the first splitter;
An optical path length changing means for changing an optical path length of the reference light reflected from the reference light reflecting means;
Reflected light transmission means for transmitting the reference light from the first splitter to a reference light irradiation position for irradiating the reference light reflection means;
First to n-th measurement light transmission means for transmitting the first to n-th measurement lights from the second splitter to the measurement light irradiation positions for irradiating the measurement points of the temperature measurement object, respectively;
A light receiving means for measuring interference between the first to nth measurement lights reflected from the temperature measurement object and the reference light reflected from the reference light reflecting means;
The temperature measuring apparatus according to claim 1, wherein the optical path lengths from the second splitter to the temperature measurement object in the first to n-th measuring lights are different from each other. The intensity ratio between the measurement light and the reference light split by the first splitter is n: 1,
2. The temperature measuring apparatus according to claim 1, wherein each of the first to n-th measurement lights split by the second splitter has an intensity of 1 / n of the intensity of the measurement light. Between the measurement light irradiation positions of the first to nth measurement lights and the temperature measurement object, shutter means capable of turning on and off the irradiation of the first to nth measurement lights to the temperature measurement object is provided. The temperature measuring device according to claim 1, wherein the device is a temperature measuring device. The temperature measurement object is a substrate to be processed by a substrate processing apparatus,
The first to n-th measurement light transmission units are disposed in the substrate processing apparatus so that the first to n-th measurement lights are respectively irradiated to a plurality of measurement points in a plane of the substrate to be processed. The temperature measuring device according to any one of claims 1 to 3. The substrate processing apparatus includes a processing chamber that performs a predetermined process on the substrate to be processed, and a transfer chamber that is connected to the processing chamber and carries the substrate to and from the processing chamber.
At least one of the first to n-th measurement light transmission units is disposed in the transfer chamber, and the measurement light is irradiated to the substrate to be processed in the transfer chamber. The temperature measuring device according to claim 4. The temperature measurement object is a substrate to be processed by the substrate processing apparatus and a focus ring disposed around the substrate to be processed.
6. The temperature measurement according to claim 5, wherein at least one of the first to n-th measurement light transmission units is arranged so that the measurement light is irradiated also to the focus ring. apparatus. The temperature measurement object is an upper electrode disposed in a processing chamber of the substrate processing apparatus,
7. At least one of the first to n-th measurement light transmission means is disposed so that measurement light is irradiated also to the upper electrode. The temperature measuring device described in 1. Irradiating each measurement point of the temperature measurement object with n first to n-th measurement lights each having a different optical path length and irradiating the reference light reflecting means with reference light;
The first to nth measurement lights reflected from the temperature measurement object while changing the optical path length of the reference light reflected from the reference light reflection means by moving the reference light reflection means in one direction, and the reference Measuring interference with reference light reflected from the light reflecting means;
Measuring the temperature of each measurement point of the temperature measurement object based on the result of the interference measurement;
A temperature measuring method characterized by comprising: The intensity ratio of the combined light of the first to nth measurement lights and the reference light is n: 1,
9. The temperature measuring method according to claim 8, wherein the intensity of the first to nth measurement lights is 1 / n of the intensity of the combined light of the first to nth measurement lights. The interference between the reflected light of the measurement light and the reflected light of the reference light is specified by turning on and off the irradiation of the measurement light to be measured among the first to nth measurement lights by the shutter means. The temperature measuring method according to claim 8 or 9. The step of measuring the temperature of the temperature measurement object based on the result of the interference measurement includes a measurement result obtained by measuring the optical path length of the first to n-th measurement light based on at least the interference wave, and a temperature measurement object-specific The temperature measurement method according to claim 8, wherein the temperature of the temperature measurement object is calculated based on an initial optical path length. The temperature measurement object is a substrate to be processed by a substrate processing apparatus,
The temperature measurement method according to any one of claims 8 to 11, wherein the first to nth measurement lights are respectively irradiated to a plurality of measurement points in a plane of the substrate to be processed. The substrate processing apparatus includes a processing chamber that performs a predetermined process on the substrate to be processed, and a transfer chamber that is connected to the processing chamber and carries the substrate to and from the processing chamber.
The temperature measurement method according to claim 12, wherein at least one of the first to n-th measurement lights is also applied to the substrate to be processed in the transfer chamber. The temperature measurement object is a substrate to be processed by the substrate processing apparatus and a focus ring disposed around the substrate to be processed.
The temperature measurement method according to claim 13, wherein at least one of the first to n-th measurement lights is also applied to the focus ring. The temperature measurement object is an upper electrode disposed in a processing chamber of the substrate processing apparatus,
The temperature measurement method according to claim 8, wherein at least one of the first to n-th measurement lights is also applied to the upper electrode. A temperature measurement system comprising a substrate processing apparatus and a temperature measurement apparatus,
The substrate processing apparatus includes a processing chamber for performing a predetermined process on at least the substrate to be processed,
The temperature measuring device includes a light source, a first splitter for splitting light from the light source into light for temperature measurement and reference light, and n light for measurement from the first splitter. A second splitter for splitting the first to n-th measurement lights, a reference light reflecting means for reflecting the reference light from the first splitter, and an optical path length of the reference light reflected from the reference light reflecting means. An optical path length changing means for changing, a reflected light transmitting means for transmitting the reference light from the first splitter to a reference light irradiation position for irradiating the reference light reflecting means, and first to first light from the second splitter. First to n-th measurement light transmitting means for transmitting n-th measurement light to measurement light irradiation positions for irradiating each measurement point of the substrate to be processed, and the first to n-th measurement light reflected from the substrate to be processed Light and said Light receiving means for measuring interference with the reference light reflected from the illumination reflecting means, and the optical path lengths from the second splitter to the substrate to be processed in the first to n-th measuring lights are different from each other. A temperature measurement system characterized by that. A control system comprising a substrate processing device, a temperature measuring device, and a control device,
The substrate processing apparatus includes a processing chamber for performing a predetermined process on at least the substrate to be processed,
The temperature measuring device includes a light source, a first splitter for splitting light from the light source into light for temperature measurement and reference light, and n light for measurement from the first splitter. A second splitter for splitting the first to n-th measurement lights, a reference light reflecting means for reflecting the reference light from the first splitter, and an optical path length of the reference light reflected from the reference light reflecting means. An optical path length changing means for changing, a reflected light transmitting means for transmitting the reference light from the first splitter to a reference light irradiation position for irradiating the reference light reflecting means, and first to first light from the second splitter. First to n-th measurement light transmitting means for transmitting n-th measurement light to measurement light irradiation positions for irradiating each measurement point of the substrate to be processed, and the first to n-th measurement light reflected from the substrate to be processed Light and said Light receiving means for measuring interference with the reference light reflected from the illumination reflecting means, and the optical path lengths from the second splitter to the substrate to be processed in the first to n-th measuring lights are different from each other. West,
The control device calculates a temperature of each measurement point of the substrate to be processed based on an interference wave between the first to n-th measurement light and the reference light measured by the light receiving unit, and based on these temperatures A control system that performs at least one of temperature control and process control of the substrate to be processed in a processing chamber of the substrate processing apparatus. The substrate processing apparatus includes a focus ring disposed around the substrate to be processed disposed in the processing chamber,
At least one of the first to n-th measurement light transmission means is arranged so that the measurement light is irradiated also to the focus ring,
The control device also calculates the temperature of the focus ring based on the interference wave from the light receiving means, and takes into account the temperature of the focus ring, while taking into account the temperature of the substrate to be processed in the processing chamber of the substrate processing apparatus. The control system according to claim 17, wherein at least one of control and process control is performed. The substrate processing apparatus includes an upper electrode disposed in the processing chamber,
At least one of the first to n-th measurement light transmission means is arranged so that the measurement light is irradiated to the upper electrode;
The control device also calculates the temperature of the upper electrode, and considers the temperature of the upper electrode, and controls at least one of temperature control and process control of the substrate to be processed in the processing chamber of the substrate processing apparatus. The control system according to claim 17 or 18, wherein: A control method for a control system of a substrate processing apparatus for performing predetermined processing on a substrate to be processed,
Irradiating each of the measurement points of the substrate to be processed with n first to n-th measurement lights having different optical path lengths, and irradiating the reference light to the reference light reflecting means;
The first to nth measurement lights reflected from the substrate to be processed and the reference light while changing the optical path length of the reference light reflected from the reference light reflecting means by moving the reference light reflecting means in one direction. Measuring interference with reference light reflected from the reflecting means;
Measuring the temperature of each measurement point of the substrate to be processed based on the result of the interference measurement;
Performing at least one of temperature control and process control of the substrate to be processed in the substrate processing apparatus based on the measured temperature of each measurement point of the substrate to be processed;
A control method comprising:

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