JP2006110706A - Atom manipulating method, atom manipulating apparatus, and identification element forming method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an atom manipulating method, etc., which can manipulate an atom of the surface of a substrate or an atom existing on the surface of the substrate even if the substrate is insulative. <P>SOLUTION: In the atom manipulating method, the tip end of a probe 32 is moved up to the position above an Sn atom 60a (Fig. (d)) to keep on approaching the substrate 51 until a required atomic force acts on the probe 32 (Fig. (e)), and then is moved in the principal scanning direction (a horizontal direction) up to the position corresponding to a Ge atom 70a while keeping the state that the required atomic force acts on the probe 32 (Fig. (f)). Next, the probe 32 is separated from the substrate 51 so as to weaken the atomic force acting on the probe 32 (Fig. (g)). The processes shown in the figures from Fig. (d) to Fig. (g) are repeated. When the probe 32 is moved in the horizontal direction in the state that the required atomic force acts on the probe 32 (from Fig. (e) to Fig. (f)), the positions of the Sn atom 60a and the Ge atom 70a are changed by the atomic force acting across the tip end of the probe 32 and the Sn atom 60a, and by the atomic force acting across the tip end of the probe 32 and the Ge atom 70a. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an atomic manipulation method, an atomic manipulation device, and a discriminator forming method, and more specifically, a force detection unit that detects a force acting on a substance, for example, an atom including a probe on which an interatomic force acts Atom operation method and atom capable of manipulating substrate surface or atoms on substrate surface using atomic force microscope (AFM) and utilizing atomic force acting between probe and atom The present invention relates to an operating device and an identification body forming method capable of forming an atomic size identification body on a substrate surface by operating atoms with the atomic operation method.

  Proposal of nanoscale microdevices (nanodevices) such as single-electron transistors and single-electron memories using the quantum size effect in addition to the improvement of integration due to progress in semiconductor manufacturing technology represented by microfabrication technology Has been. As a method of manufacturing such a nanodevice, conventionally, a top-down approach of manufacturing a device having a small structure from a semiconductor substrate (for example, Si, GaAs, etc.) using a photolithography technique or the like has been performed. . However, the top-down approach is considered to be limited in miniaturization, and there is a demand for the development of a bottom-up approach for manufacturing a device from each atom.

  As one of the bottom-up approaches, a scanning tunneling microscope (STM) is used to bring a sharply polished electrode needle close to the surface of the object to be processed, leaving a very fine gap. There has been proposed a method of performing microfabrication of an object to be processed by a tunnel current that flows between the object when a voltage is applied to the object (for example, see Patent Document 1 and Non-Patent Document 1).

In addition, a method has been proposed in which an AFM is used to move the probe in a direction perpendicular to the sample and “abut” the atom at the tip of the probe to the sample atom (for example, non-sample). (See Patent Document 2 and Non-Patent Document 3.)
JP-A-6-215722 Eigler (DMEigler) and 1 other author, “Positioning single atoms with a scanning tunneling microscope”, Nature, 1990, 344, p524-526) 50th Physics-related Joint Lecture Meeting, Proceedings (2003.03) 51st Physics-related Joint Lecture, Proceedings of Lectures (2004.03)

  However, in the microfabrication method using STM, it is necessary to apply a tunnel current between the electrode needle and the object to be processed. For example, conductive materials such as Xe atoms and CO molecules adsorbed on the conductive substrate are used. Although atoms (including molecules) on a conductive substrate can be manipulated, in principle, manipulation of atoms on an insulating substrate is extremely difficult. Moreover, in order to manipulate atoms, an environment of extremely low temperature (for example, 4K) is required, and it has not yet been used in various fields as industrial applications.

  For example, in the technique disclosed in Non-Patent Document 1, atoms such as Xe and CO on a Cu or Ni substrate can be manipulated, but Xe atoms and CO atoms exist on the substrate. Since the adsorption force with atoms is small and diffuses at room temperature (300K) due to thermal energy and moves its position, in order to manipulate these atoms, it must be in a very low temperature environment, that is, with low thermal energy. There was a need to do. As described above, according to the conventional technique, the environment for performing atomic operations is limited, and the target atoms are also limited.

  In the techniques disclosed in Non-Patent Document 2 and Non-Patent Document 3, the atoms of the sample can be extracted because the probe is moved in the direction perpendicular to the sample. It is impossible to swap positions. Therefore, in order to study the physical properties when the atomic arrangement of a substance changes, it is necessary to place the extracted atom in another position, but the technology for arranging the extracted atom in a desired position has not yet been realized. Is the actual situation.

  The present invention has been made in view of such circumstances, and by using a probe on which an atomic force acts, by scanning the probe with a predetermined atomic force acting, An object of the present invention is to provide an atomic manipulation method and an atomic manipulation device capable of manipulating atoms on the surface of a substrate surface.

  In the present invention, for example, while measuring (calculating) the atomic force acting on the probe, the probe is substantially parallel to a straight line connecting two adjacent atoms on the substrate surface in a state where a predetermined atomic force is applied. An object of the present invention is to provide an atomic operation method and an atomic operation apparatus that can exchange positions of two atoms even if the substrate is insulative by scanning in any direction.

  Further, the present invention, for example, by measuring (calculating) the atomic force acting on the probe, scanning the probe in a direction substantially parallel to the substrate surface in a state where a predetermined atomic force is applied, for example, An object of the present invention is to provide an atomic operation method and an atomic operation apparatus capable of extracting atoms from the substrate surface even if the substrate is insulative.

  Further, the present invention, for example, by measuring (calculating) the atomic force acting on the probe, scanning the probe in a direction substantially parallel to the substrate surface in a state where a predetermined atomic force is applied, for example, An object of the present invention is to provide an atomic operation method and an atomic operation apparatus that can move the position of atoms on the surface of the substrate even if the substrate is insulative.

  Further, the present invention uses a probe on which an atomic force acts, controls the distance of the probe from the substrate surface, and in a state where the atomic force based on the distance acts, is substantially parallel to the substrate surface. It is an object of the present invention to provide an atomic operation method and an atomic operation device that can be operated in a very simple and highly accurate manner without directly detecting an interatomic force by scanning in the direction.

  Another object of the present invention is to provide a method for forming an identification body that can form an identification body such as characters and marks of atomic size on a substrate surface by manipulating atoms by the above-described atomic manipulation method.

  An atomic operation method according to a first aspect of the present invention is an atomic operation method for operating an atom on a substrate surface or an atom on a surface of a substrate surface using a probe on which an atomic force acts, wherein a predetermined atomic force is The probe is scanned in an acted state to manipulate atoms on the substrate surface or atoms on the surface of the substrate.

  In the present invention, the probe is scanned while a predetermined atomic force is applied. By scanning the probe, the atomic force acting between the tip of the probe and an atom on the substrate surface or an atom on the surface of the substrate manipulates the position of the atom on the substrate surface or the surface of the substrate surface. can do. Here, the interatomic force is any force acting between the probe and an atom on the surface of the substrate or an atom on the surface of the substrate, specifically, a chemical bonding force, van der Waals. Force, covalent bond force, ionic bond force, metal bond force, electrostatic force, magnetic force, exchange force, etc. An atom can be manipulated by an interatomic force acting between the probe and the atom without contacting the probe with the atom. In addition, the conventional atomic operation method has a limitation that it cannot be applied to an insulator because it is necessary to measure a tunnel current flowing between an electrode needle and an object to be processed. Since an atom is manipulated, even an insulator can be manipulated. In this way, the restriction of the operation target can be eliminated, which is an extremely effective means.

  In the atomic operation method according to the second invention, the probe is scanned in a direction substantially parallel to a straight line connecting two adjacent atoms on the substrate surface in a state where a predetermined interatomic force is applied. It is characterized by exchanging the positions of atoms.

  In the present invention, the probe is scanned in a direction substantially parallel to a straight line connecting two adjacent atoms on the substrate surface in a state where a predetermined atomic force is applied. By scanning the probe as described above, the positions of two atoms are exchanged by an atomic force acting between the tip of the probe and each atom. If the surface state of the substance is imaged by atomic force and the arrangement state of the atoms in the above-described scanning is imaged (for example, using AFM), the user can indicate that the positions of the atoms have been exchanged in time series. Can be visually recognized. By repeating such atomic operations, it is possible to freely control the atomic arrangement of a substance, which is an effective means for easily creating a substance with a changed atomic arrangement and studying its physical properties. .

  The atom manipulation method according to a third aspect of the present invention includes scanning the probe from a corresponding position of one of the two atoms to a corresponding position of the other atom in a state where the predetermined interatomic force is applied, The scanning of the probe from the corresponding position of the other atom to the corresponding position of the one atom is repeated in a state where an atomic force weaker than the predetermined atomic force is applied.

  In the present invention, the scanning of the probe from the corresponding position (for example, upward) of one of the two atoms to the corresponding position (for example, upward) of the other atom in a state where a predetermined interatomic force is applied. The scanning of the probe from the corresponding position (for example, upward) of the other atom to the corresponding position (for example, upward) of one atom is repeated in a state where an atomic force weaker than a predetermined atomic force is applied. By repeating the scanning of the probe in this way, the positions of the two atoms can be reliably exchanged.

  In an atomic operation method according to a fourth aspect of the present invention, the atoms on the substrate surface are extracted from the substrate surface by scanning the probe in a direction substantially parallel to the substrate surface in a state where a predetermined atomic force is applied. It is characterized by.

  In the present invention, the probe is scanned in a direction substantially parallel to the substrate surface in a state where a predetermined atomic force is applied. By scanning the probe in this manner, atoms at the corresponding positions can be extracted from the substrate surface by the atomic force acting between the tip of the probe and the atoms on the substrate surface. If the surface state of the substance is imaged by atomic force and the arrangement state of atoms in the above-described scanning is imaged (for example, using AFM), the user can confirm that the atoms have been extracted from the substrate surface. It can be visually recognized in time series.

  According to a fifth aspect of the present invention, in the atomic operation method, the probe is scanned in a direction substantially parallel to the substrate surface in a state where a predetermined interatomic force is applied, and the position of the atom on the surface of the substrate surface is moved. It is characterized by doing.

  In the present invention, the probe is scanned in a direction substantially parallel to the substrate surface in a state where a predetermined atomic force is applied. By scanning the probe, the position of the atom can be moved in the scanning direction of the probe by the interatomic force acting between the tip of the probe and the atoms arranged on the surface of the substrate. . If the surface state of a substance is imaged by atomic force and the arrangement state of atoms in the above-described scanning is imaged (for example, using AFM), the user visually recognizes that the atoms have moved in time series. be able to.

  An atomic operation method according to a sixth aspect of the present invention is characterized in that the atoms are operated while measuring an atomic force acting between the probe and an operation target atom.

  In the present invention, the position of the atom can be manipulated with high accuracy since the atom is manipulated while measuring the interatomic force acting between the probe and the atom to be manipulated. In addition, for example, by measuring the atomic force with AFM, it is possible to determine what kind of atomic force is moving the atom from the distance dependency. Have

  The atomic operation method according to a seventh aspect of the invention is characterized in that the atomic force is adjusted by controlling the distance of the probe from the substrate surface.

  In the present invention, the atomic force is adjusted by controlling the distance of the probe from the substrate surface. Since the interatomic force acting on the probe and the substrate surface is determined based on the distance between the probe and the substrate surface, it is not always necessary to detect the atomic force, and the distance between the probe and the substrate surface is not necessarily required. By controlling the above, it is possible to obtain a state in which a predetermined atomic force acts between the probe and the substrate surface.

  An atomic operation method according to an eighth aspect of the present invention detects an electric current flowing between the probe and the substrate surface, and controls an atomic force by controlling a distance of the probe from the substrate surface based on the detected current. It is characterized by adjusting.

  In the present invention, a current (tunnel current) flowing between the probe and the substrate surface is detected, and the distance of the probe from the substrate surface is controlled based on the detected current. Since the interatomic force acting on the probe is mainly determined based on the distance between the probe and the substrate surface, the atomic force is adjusted by controlling the distance between the probe and the substrate surface. When the present invention is applied to a material system capable of detecting a tunnel current, that is, a conductive substrate, a portion for detecting a force acting on the probe is not necessary. Therefore, the apparatus can be made small and the apparatus rigidity is increased. In general, it is considered that a scanning tunneling microscope for measuring a tunnel current has a simpler apparatus configuration and can be stably measured as compared with an atomic force microscope for detecting a force. From the above, it is relatively easy to control the distance by the tunnel current. Therefore, when the substrate is conductive, if the tunnel current is detected using a conductive probe, The atomic force acting on the probe can be adjusted with extremely high accuracy.

  In an atomic operation method according to a ninth aspect of the invention, near-field light is generated by irradiating light to the probe or the substrate surface, and scattered light based on near-field interaction between the probe and the substrate surface is detected. The atomic force is adjusted by controlling the distance of the probe from the substrate surface based on the detected scattered light.

  In the present invention, the probe or the substrate surface is irradiated with light to generate near-field light, scattered light based on the near-field interaction between the probe and the substrate surface is detected, and based on the detected scattered light To control the distance of the probe from the substrate surface. Since the magnitude of the near-field interaction is determined according to the distance between the probe and the substrate surface, the distance between the probe and the substrate surface is estimated from the spectral distribution and intensity of the detected scattered light. Can do. Accordingly, the atomic force acting on the probe can be adjusted by controlling the distance between the probe and the substrate surface based on the detected scattered light.

  An atomic operation method according to a tenth aspect of the present invention is to detect a capacitance between the probe and the substrate surface, and control a distance of the probe from the substrate surface based on the detected capacitance. It is characterized by adjusting the atomic force.

  In the present invention, the capacitance between the probe and the substrate surface is detected, and the distance of the probe from the substrate surface is controlled based on the detected capacitance. Since the capacitance is determined according to the distance between the probe and the substrate surface, the distance between the probe and the substrate surface can be estimated from the capacitance. Accordingly, the atomic force acting on the probe can be adjusted by controlling the distance between the probe and the substrate surface based on the detected capacitance.

  An atomic operation device according to an eleventh aspect of the present invention is an atomic operation device that includes a probe that acts on an atomic force and exchanges the positions of two adjacent atoms on the surface of the substrate. The atomic force that acts on the probe And when the atomic force is determined to be within the predetermined range by the determination unit, the probe is placed in a state where the atomic force is applied. And a scanning unit that scans in a direction substantially parallel to the straight line connecting the two atoms.

  In the present invention, the determination unit determines whether or not the atomic force acting on the probe is within a predetermined range, and when the determination unit determines that the atomic force is within the predetermined range, With the interatomic force acting, the probe is scanned in a direction substantially parallel to a straight line connecting two atoms. Therefore, since the probe is scanned only when the interatomic force acting on the probe is effective for the atomic operation, there is no possibility of performing unnecessary scanning.

  An atomic operation device according to a twelfth aspect of the present invention is an atomic operation device that includes a probe on which an interatomic force acts and operates the position of an atom on a substrate surface or a surface of the substrate surface, and acts on the probe. A determination unit that determines whether or not the atomic force is within a predetermined range; and when the determination unit determines that the atomic force is within the predetermined range, the atomic force acts on the probe. And a scanning unit that scans in a direction substantially parallel to the substrate surface.

  In the present invention, the determination unit determines whether or not the atomic force acting on the probe is within a predetermined range, and when the determination unit determines that the atomic force is within the predetermined range, The probe is scanned in a direction substantially parallel to the substrate surface in a state where an interatomic force is applied. Therefore, since the probe is scanned only when the interatomic force acting on the probe is effective for the atomic operation, there is no possibility of performing unnecessary scanning.

  The atomic operation device according to a thirteenth aspect of the present invention further comprises means for changing a separation length between the probe and the substrate surface when the determination unit determines that the atomic force is not within a predetermined range. And

  In the present invention, when the determination unit determines that the atomic force is not within the predetermined range, the atomic force acting on the probe is predetermined by changing the separation length between the probe and the substrate surface. It can be controlled to be in range.

  An atomic manipulation device according to a fourteenth aspect of the present invention is an atomic manipulation device comprising a probe on which an interatomic force acts, and exchanging positions of two adjacent atoms on the substrate surface. A control unit that controls a distance; a determination unit that determines whether or not the distance is within a predetermined range; and when the determination unit determines that the distance is within a predetermined range, the probe is And a scanning unit that scans in a direction substantially parallel to a straight line connecting the two atoms in a state in which an interatomic force based on a distance acts.

  In the present invention, the determination unit determines whether the distance between the probe and the substrate surface is within a predetermined range, and when the determination unit determines that the distance is within the predetermined range, the probe and the substrate The probe is scanned in a direction substantially parallel to a straight line connecting two atoms in a state where an atomic force based on the distance from the surface is applied. By scanning the probe as described above, the positions of two atoms are exchanged by an atomic force acting between the tip of the probe and each atom. Since the interatomic force acting on the probe and the substrate surface is determined based on the distance between the probe and the substrate surface, it is not always necessary to detect the atomic force, and the distance between the probe and the substrate surface is not necessarily required. By controlling the above, it is possible to obtain a state in which a predetermined atomic force acts between the probe and the substrate surface.

  An atomic operation device according to a fifteenth aspect of the present invention includes a detection unit that detects a current flowing between the probe and the substrate surface, and the control unit is configured to detect the probe based on the current detected by the detection unit. The distance of the needle from the substrate surface is controlled.

  In the present invention, a current (tunnel current) flowing between the probe and the substrate surface is detected, and the distance of the probe from the substrate surface is controlled based on the detected current. Since the atomic force acting on the probe is determined based on the distance between the probe and the substrate surface, the atomic force is adjusted by controlling (feedback) the distance between the probe and the substrate surface.

  According to a sixteenth aspect of the present invention, there is provided an atomic manipulation device according to the present invention, wherein the probe or the substrate surface is irradiated with light to generate near-field light, and scattered light based on near-field interaction between the probe and the substrate surface. And a controller that controls the distance of the probe from the substrate surface based on the scattered light detected by the detector.

  In the present invention, the probe or the substrate surface is irradiated with light to generate near-field light, scattered light based on the near-field interaction between the probe and the substrate surface is detected, and based on the detected scattered light To control the distance of the probe from the substrate surface. Since the magnitude of the near-field interaction is determined according to the distance between the probe and the substrate surface, the distance between the probe and the substrate surface is estimated by the spectral distribution and intensity of the detected scattered light, By controlling (feedback) the distance of the probe from the substrate surface according to the estimated distance, the atomic force acting on the probe can be adjusted.

  An atomic operation device according to a seventeenth aspect of the present invention includes a detection unit that detects a capacitance between the probe and the substrate surface, and the control unit is based on the capacitance detected by the detection unit. The distance between the probe and the substrate surface is controlled.

  In the present invention, the capacitance between the probe and the substrate surface is detected, and the distance of the probe from the substrate surface is controlled based on the detected capacitance. Since the capacitance is determined according to the distance between the probe and the substrate surface, the distance between the probe and the substrate surface is estimated by the capacitance, and the probe is determined according to the estimated distance. By controlling (feedback) the distance of the needle from the substrate surface, the atomic force acting on the probe can be adjusted.

  A discriminator forming method according to an eighteenth aspect of the present invention is characterized in that atoms are manipulated by any one of the above-described first to tenth inventions to form an atomic size discriminator on a substrate surface. To do.

  In the present invention, by manipulating the randomly distributed atoms, it can be arranged at a predetermined position or extracted, so that by repeating the atom manipulation, atomic size characters and marks Etc. can be formed on the substrate surface.

  According to the present invention, by using a probe on which an atomic force acts, and scanning the probe in a state where a predetermined atomic force is applied, atoms on the substrate surface or atoms on the surface of the substrate surface Can be operated.

  According to the present invention, by scanning the probe in a direction substantially parallel to a straight line connecting two adjacent atoms on the substrate surface in a state where a predetermined atomic force is applied, the substrate is insulative. Even so, the positions of the two atoms can be exchanged.

  According to the present invention, by scanning the probe in a direction substantially parallel to the substrate surface in a state where a predetermined atomic force is applied, atoms are extracted from the substrate surface even if the substrate is insulative. be able to.

  According to the present invention, the probe is scanned in a direction substantially parallel to the substrate surface in a state where a predetermined atomic force is applied, so that even if the substrate is insulative, The position of the atom can be moved.

  According to the present invention, using a probe on which an atomic force acts, the distance from the substrate surface of the probe is controlled, and in a state where the atomic force based on the distance acts, it is substantially parallel to the substrate surface. By scanning in any direction, it is possible to manipulate the position of the atoms very easily and with high accuracy without detecting interatomic forces.

  Accordingly, it is possible to manipulate the atoms to form identification objects such as atomic-size characters and marks on the substrate surface. Further, the positions of various atoms can be exchanged, and by using the atomic operation method according to the present invention, a plurality of two or more types of atoms are combined to search for a device or a functional material having a specific function. Is extremely effective. Furthermore, in the field of pharmacy and life science, it is possible to actually confirm the change in the function by exchanging the functional substance and the atomic species of the living body. Furthermore, material search that cannot be created by self-organization techniques, and cantilever and probe arrayed in an array or matrix, and the present invention can be implemented to create and evaluate materials by mass manipulation at once. Thus, it is possible to apply to a so-called combinatorial method for efficiently searching for a material having a new function at the atomic level, and the excellent effects are obtained.

  Hereinafter, the present invention will be described in detail with reference to the drawings illustrating embodiments thereof.

(Embodiment 1)
FIG. 1 is a block diagram showing a configuration example of an atomic manipulation device according to Embodiment 1 of the present invention.
The atomic operation device 1 according to the present invention includes a control unit 10 composed of a CPU. The control unit 10 is connected to the ROM 11, the RAM 12, the operation unit 13, the display unit 14, and the AFM 20, controls these units, executes various functions according to a computer program stored in advance in the ROM 11, and cooperates with the units. Or it functions alone as various means in the present invention. The RAM 12 stores temporary data generated when the control unit 10 executes the computer program, and is configured by, for example, a DRAM or an SDRAM.

The AFM 20 includes a scanning unit 21 including a cantilever 31, a probe 32 attached to one end of the cantilever 31, and an excitation piezoelectric element 33 attached to the other end of the cantilever 31, and a sample S to be operated. And a scanning piezoelectric element 23 for driving and controlling the sample table 22 in a three-dimensional direction. The scanning unit 21 is provided in a vacuum chamber so that the probe 32 can be scanned in an ultra-high vacuum (10 ⁻⁹ Pa). In order to facilitate replacement, the cantilever 31 may be attached to the cantilever holder. In this case, the excitation piezoelectric element 33 may be attached to the cantilever holder or the device main body that receives the cantilever holder. If it is the structure which can vibrate, it will not be limited regarding arrangement | positioning of the piezoelectric element 33 for vibration.

  The vibrating piezoelectric element 33 vibrates the cantilever with a mechanical resonance frequency of the cantilever 31 or a frequency in the vicinity thereof and a predetermined amplitude. The cantilever 31 is a minute leaf spring having a length of, for example, 100 to 200 μm, and vibration generated by the exciting piezoelectric element 33 is transmitted to the probe 32 through the cantilever 31. On the other hand, the scanning piezoelectric element 23 changes the three-dimensional relative position and relative distance between the sample S and the probe 32. Note that the cantilever and the displacement detector are not necessarily required as long as the mechanical interaction acting on the probe tip can be detected. For example, a method of attaching a probe to a crystal resonator (for example, by Seizo Morita (R. Wiesendanger, E. Meyer), “Noncontact Atomic Force Microscopy”, Springer ), See July 24, 2002)).

  For the probe 32, arc-shaped silicon having a length of 10 μm and a tip of several nmφ was used. Such a fine probe 32 can be obtained by a semiconductor microfabrication technique. The material of the probe 32 is not limited. For example, in the case of using a silicon probe for surface observation, the oxide, dust, and the like coated on the probe surface are removed. It is preferable to improve the resolution by increasing the sensitivity of the atomic force.

  The AFM 20 includes a displacement detection unit 24, an FM demodulation unit 25, an AGC unit (automatic gain control unit) 26, a phase shifter 27, and a feedback controller unit 28.

  When the probe 32 is brought close to the sample S, the effective spring constant of the cantilever 31 is changed by the mechanical interaction acting on the probe 32 and the sample S, and the mechanical resonance frequency is changed. Therefore, the AFM 20 detects the amount of displacement on one end side of the cantilever 31 to which the probe 32 is attached, that is, the amount of displacement of the probe 32 by the displacement detector 24, and based on the detected amount of displacement, the AFM 20 detects the displacement. The FM demodulator 25 detects the amount of change (Δf) in the mechanical resonance frequency of the cantilever 31 due to the interaction between the sample 32 and the sample S. The FM demodulator 25 outputs a signal related to the detected amount of change in the mechanical resonance frequency to the controller 10.

  Further, the AFM 20 is based on the amount of displacement detected by the displacement detector 24 so that the displacement of the cantilever 31 is kept constant, and the displacement detector 24, the AGC unit 26, the phase shifter 27, and the scanning unit 21. A positive feedback transmission loop is formed by the (vibration piezoelectric element 33). Thus, the cantilever 31 is vibrated with a predetermined frequency and amplitude.

  Based on the amount of change in the mechanical resonance frequency detected by the FM demodulator 25, the feedback controller unit 28 makes the scanning piezoelectric element 23 in the Z direction so that the distance between the probe 32 and the sample S is substantially constant. Control the drive. Further, since the feedback controller unit 28 controls the distance between the probe 32 and the sample S to be substantially constant, a signal related to this control is used as a signal for generating an image signal of the surface of the sample S. Output to the control unit 10.

  The control unit 10 generates an image signal based on the signal output from the AFM 20 (feedback controller unit 28), and outputs the image signal to the display unit 14. The display unit 14 is a display unit such as a liquid crystal display or a CRT display, and displays an image related to the input image signal. The user can confirm the surface state of the sample S, that is, the arrangement of atoms on the surface, by the image displayed on the display unit 14.

  The operation unit 13 includes a scanning start position input unit 13 a and a scanning end position input unit 13 b for operating the atomic operation device 1. The present invention is characterized in that the probe 32 is scanned laterally in order to manipulate the position of the atoms (details will be described later), and scanning of the probe 32 is started by the scanning start position input unit 13a. The position of the atom is received, and the position of the atom at which the scanning of the probe 32 is completed is received by the scanning end position input unit 13b.

  Further, the control unit 10 performs a mechanical action (atom) acting on the probe 32 and the sample S (atom) based on the signal related to the change amount of the mechanical resonance frequency output from the AFM 20 (FM demodulation unit 25). Interatomic force) is calculated, and it is determined whether or not the atomic force is within a predetermined range. When the atomic force is determined to be within the predetermined range, a scanning signal is generated so that the probe 32 scans in the predetermined direction in that state, and the X direction and Y of the scanning piezoelectric element 23 are generated by the scanning signal. Control the driving direction. In this way, the scanning direction of the probe 32 with respect to the sample S is controlled. Although the case where the sample stage 22 is driven and controlled in the three-dimensional direction by the scanning piezoelectric element 23 has been described, the sample stage 22 is driven and controlled only in the Z direction, and the cantilever side is scanned in the X direction and the Y direction. The scanning direction of the probe 32 with respect to the sample S may be controlled. That is, any element may be used in any arrangement as long as the three-dimensional relative position between the probe and the sample can be changed. Hereinafter, a case where the scanning direction of the probe 32 with respect to the sample S is controlled by scanning the cantilever side in the X direction and the Y direction will be described so that the atomic operation method according to the present invention is easy to understand.

  Next, an atomic manipulation method for manipulating the positions of two adjacent atoms on the substrate surface using the above-described atomic manipulation device 1 will be described. 2 and 3 are explanatory views showing an atomic operation method according to Embodiment 1 of the present invention, FIG. 2 is a top view, and FIG. 3 is a cross-sectional view.

  FIG. 2A shows the sample S in a state where Sn atoms 60 are embedded in the surface ([111] plane) of the single crystal Ge substrate 51, and the Ge atoms 70 and the Sn atoms 60 are randomly arranged. Has been. In order to obtain such a state, as shown in the cross-sectional view of FIG. 4, Sn atoms 60 are deposited on the surface of the single crystal Ge substrate 51 as a base (FIG. 4A). The Sn atoms 60 only interact with the lower Ge atoms (bonding force) in the flat portion of the substrate 51, but the bonding force between the lower Ge atoms and the lateral Ge atoms in the stepped portion. Because it occurs, it is easy to be taken into the stepped portion. Then, annealing is performed at about 600 K (Kelvin) to give thermal energy to the Ge atoms 70 and the Sn atoms 60 so that the Ge atoms 70 and the Sn atoms 60 are randomly arranged on the substrate surface. (FIG. 4B).

  The deposition amount of Sn atoms is such that a small amount of Sn atoms is embedded in the substrate 51 so that the original (Ge) crystal structure is maintained. That is, the ratio of Sn atoms to Ge atoms is small, and a region where Ge atoms are exposed is secured. Further, since the size of Sn atoms is approximately 40% larger than that of Ge atoms, Sn atoms are not implanted into the substrate and can be formed on the substrate surface. That is, of the two types of atoms to be manipulated, a large atom is deposited on a small atom substrate, and two atoms are mixed on the substrate surface. Although the surface may be reconfigured depending on the deposition amount, the present invention makes it possible to exchange atomic positions regardless of the surface structure. In addition, atomic manipulation of a material surface composed of a plurality of atoms such as a compound semiconductor is also possible. In addition, as a vapor deposition method, well-known techniques, such as MBE method (molecular beam epitaxial growth method) and MOCVD method (metal organic chemical vapor deposition method), can be used, and a method suitable for an embedded atom is appropriately selected.

  First, the surface of the substrate is scanned (indicated by a broken line) with the tip of the probe 32 provided at one end of the cantilever 31 close to the surface of the substrate 51 with respect to the substrate 51 in which Sn atoms 60 are embedded. Then, the arrangement of Ge atoms 70 and Sn atoms 60 is observed (FIG. 2B). In this way, an AFM image (image) of the substrate surface as shown in FIG. 5 is acquired. This scanning is the same as the surface observation by the conventional AFM.

  The user can visually recognize the shape and arrangement of the Ge atoms 70 and the Sn atoms 60 on the substrate surface from the acquired image, and the Ge atoms (herein referred to as Ge atoms 70a) and Sn atoms (herein referred to as Ge atoms 70a) and ( Here, a pair of Sn atoms 60a) is determined.

  When the Ge atom 70a and the Sn atom 60a to be exchanged are determined, the scanning direction of the probe 32 is changed to a direction parallel to the straight line 90 connecting the Ge atom 70a and the Sn atom 60a to be exchanged (see FIG. 2 (c)).

  Then, the tip of the probe 32 is moved above the Sn atom 60a (FIG. 3D). At the time of this movement, it is preferable that the distance between the tip of the probe 32 and the substrate surface is equal to or greater than the distance during observation described above so that the tip of the probe 32 does not act on each atom on the substrate surface. In other words, if the tip of the probe 32 is brought close to the substrate surface, the arrangement of atoms on the substrate surface may change, which is not preferable in the present invention.

  Next, it approaches the substrate 51 until a predetermined atomic force acts on the probe 32 (FIG. 3E), while maintaining a state where the predetermined atomic force acts on the probe 32, the Ge atoms 70a The probe 32 is moved to the corresponding position in the main scanning direction (lateral direction) (FIG. 3 (f)). Then, the probe 32 is moved away from the substrate 51 so that the atomic force acting on the probe 32 is weakened (FIG. 3G).

  When the probe 32 is moved laterally in a state where a predetermined atomic force is applied to the probe 32 (FIG. 3 (e) → 3 (f)), the atomic force acting between the tip of the probe 32 and the Sn atoms 60a and Ge atoms 70a is compared with FIG. The position with the Ge atom 70a is exchanged. The AFM 20 was developed for the purpose of observing the surface state of a substance by atomic force, and can image the arrangement state of atoms during the above-described scanning, so that the user operates while viewing the image. be able to.

  In the present invention, when the probe 32 is scanned in the vertical direction and the horizontal direction, and the probe 32 is scanned above two atoms (AA line in FIG. 7) whose positions are to be exchanged, the vertical scan is performed. Stop and scan only in the lateral direction (one-dimensional direction) with the probe 32 close to the substrate 51. That is, after the line AA in FIG. 7, images of two atoms whose positions are to be exchanged are acquired in time series. Therefore, the user can grasp in time series that the positions of the atoms have been exchanged (the BB line in FIG. 7). In FIG. 7, between the AA line and the BB line, the left image shows the Sn atom 60a, the right image shows the Ge atom 70a, and after the BB line, the left image shows the Ge atom 70a. The image on the right side shows the Sn atom 60a, and the user can grasp that the exchange of the position of the atom has occurred on the BB line.

  Here, the atomic operation device 1 may be provided with an exchange determination unit 30 (see FIG. 1) that determines whether or not the exchange of atomic positions has occurred based on the image acquired by the AFM 20. The exchange determining unit 30 obtains the luminance of the image at the position of one atom to be exchanged and the luminance of the image at the position of the other atom, and determines whether or not the atomic position exchange has occurred based on the change in the two luminances. to decide. For example, as shown in FIG. 7, the luminance of the left image is higher than the luminance of the right image before the atomic position exchange, but the luminance of the left image is higher than the luminance of the right image after the atomic position exchange. Therefore, it is possible to automatically determine whether or not atomic position exchange has occurred from two luminance changes. Of course, the image acquired by the AFM 20 may be appropriately subjected to image processing in order to improve the accuracy of determination as to whether or not atomic position exchange has occurred.

  In addition, since the Sn atom 60a and the Ge atom 70a are stable under a normal temperature (room temperature) environment by a covalent bond, the positions of both atoms can be exchanged at a normal temperature, so that an atomic operation can be performed at a low cost. It has the advantage of becoming.

  As described above, by repeating the process of exchanging the position of the Sn atom and the Ge atom on the substrate surface, for example, as shown in FIG. 8, the randomly distributed Sn atoms (FIG. 8A) are changed. The character “Sn” can be written by moving it (FIG. 8B). Since Sn atoms and Ge atoms exist in the substrate surface, that is, in the same layer, when observing the surface with AFM, both Sn atoms and Ge atoms can be observed. Bright luminescent spots, Ge atoms are imaged as dark luminescent spots.

  In this embodiment, Sn atoms are embedded on the Ge substrate and the positions of the Ge atoms and the Sn atoms are exchanged. However, the gist of the present invention is to exchange the positions by atomic force. For this reason, the substrate may be insulative and need not be conductive. Therefore, the positions of various atoms in the mixed crystal state and the alloy state can be exchanged, and it is extremely effective in searching for a device having a specific function by manipulating the positions of two kinds of atoms. . For example, it can be an effective means for developing a wire-like or cluster-like new device by mixing atoms in diamond and controlling the movement of atoms so as to be in a predetermined position. In the field of pharmacy and life science, it is possible to actually confirm the change in the function by exchanging functional substances and atomic species of the living body.

(Embodiment 2)
In the first embodiment, the probe is scanned in the direction connecting the two kinds of atoms (Ge atom and Sn atom) on the substrate surface, and the positions of the two atoms are exchanged. By scanning the probe, the atoms can be extracted from the substrate surface. 9 and 10 are explanatory views showing an atomic operation method according to Embodiment 2 of the present invention, in which FIG. 9 is a top view and FIG. 10 is a cross-sectional view.

  FIG. 9A shows the surface state of the single crystal Ge substrate 51 as the sample S. FIG. First, the substrate surface is scanned (indicated by a broken line) with the tip of the probe 32 provided at one end of the cantilever 31 close to the surface of the substrate 51 with respect to the single-crystal Ge substrate 51, and Ge The arrangement of the atoms 70 is observed (FIG. 9B). In this way, an image of the substrate surface as shown in FIG. 11 is acquired, and the user determines Ge atoms 70b to be extracted from the substrate surface.

  Next, the scanning direction of the probe 32 is changed in a direction parallel to the straight line 91 connecting the Ge atom 70b to be extracted and the Ge atom adjacent to the Ge atom 70b (here, Ge atom 70c) (FIG. 9 ( c)).

  Then, the tip of the probe 32 is moved above the Ge atom 70b (FIG. 10D), and is brought close to the substrate 51 until a predetermined atomic force acts on the probe 32 (FIG. 10E). While maintaining a state in which a predetermined atomic force is applied to the needle 32, the probe 32 is moved laterally to a position corresponding to the Ge atom 70c (FIG. 10 (f)). Then, the probe 32 is moved away from the substrate 51 so that the atomic force acting on the probe 32 is weakened (FIG. 10G).

  When the process of FIG. 10D to FIG. 10G described above is repeated and the probe 32 is moved laterally in a state where a predetermined atomic force is applied to the probe 32 (FIG. 10E) → 10 (f)), the atomic force acting between the tip of the probe 32 and the Ge atoms 70b and Ge atoms 70c causes the Ge atoms 70b to be extracted from the substrate 51 as shown in FIG. It moves to the upper surface of the Ge atom 70c.

  In the case of the single-crystal Ge substrate 51, a unit cell of c (2 × 8) is formed, so that the arrangement of Ge atoms in the scanning direction of the probe 32 can be selected by selecting the Ge atom adjacent to the Ge atom 70b to be extracted. Is different. That is, the scanning direction of the probe 32 is not limited, and as shown in FIG. 13, even when the probe 32 is scanned in the direction of the arrow 95 (FIG. 13A), the Ge atom 70b. Can be extracted from the substrate 51 (FIG. 13B).

(Embodiment 3)
In the second embodiment, atoms are extracted from the substrate surface by scanning the probe in the lateral direction with respect to the substrate surface, but are arranged on the underlying substrate (on the surface) by the same scanning. The position of the atom can be moved to the next adjacent position. FIG. 14 is an explanatory view showing an atomic operation method according to Embodiment 3 of the present invention.

  FIG. 14A shows a state in which atoms 80 are arranged on the surface of the single crystal Ge substrate 51 as the sample S. FIG. For example, according to Embodiment 2 described above, Ge atoms can be extracted from the single-crystal Ge substrate 51, and the extracted Ge atoms can be arranged on the surface of the substrate 51.

  First, the surface of the substrate is observed by scanning the substrate surface in a state where the tip of the probe 32 provided at one end of the cantilever 31 and the surface of the substrate 51 are brought close to the single crystal Ge substrate 51. An image of the substrate surface as shown in FIG. 15 is acquired. Since the atoms 80 arranged on the substrate surface are present at a higher position than the vicinity thereof, only the atoms 80 are relatively imaged as shown in FIG. Although the structure of 70 may be difficult to confirm, it can be confirmed by appropriately performing image processing or the like. Therefore, the user can reliably specify the atom 80 to be moved while confirming the acquired image.

  Then, the tip of the probe 32 is moved above the atom 80 (FIG. 14A), and is brought close to the substrate 51 until a predetermined interatomic force acts on the probe 32 (FIG. 14B). While maintaining a state in which a predetermined interatomic force is applied to 32, the probe 32 is moved laterally to a position corresponding to a Ge atom adjacent to the Ge atom 70 e immediately below the atom 80 (here, Ge atom 70 f). It is moved (FIG. 14 (c)). Then, the probe 32 is moved away from the substrate 51 so that the atomic force acting on the probe 32 is weakened (FIG. 14D). When the probe 32 is moved in a state where a predetermined interatomic force is applied to the probe 32 (FIG. 14 (b) → FIG. 14 (c)), it acts between the tip of the probe 32 and the atom 80. Due to the interatomic force, as shown in FIG. 16, the position of the atom 80 moves from the upper surface of the Ge atom 70e to the upper surface of the Ge atom 70f.

  More specifically, FIG. 15 shows a case where the substrate surface is scanned at Δf = −28.8 Hz (−0.8 nN), and one atom is imaged on the Ge surface. On the other hand, in FIG. 16, the same substrate surface is scanned at Δf = −3.20 Hz (−1.0 nN) to the broken line C, and after the broken line C, the probe 32 is moved closer to Δf = −28.8 Hz ( -0.8 nN) shows the case of scanning. In FIG. 16, since atoms are imaged while being moved by the scanning of the probe, it appears that there are two atoms. These two atoms are the same atom 80, the atom imaged on the lower side indicates the atom before the movement, and the atom imaged on the upper side indicates the atom after the movement. Thus, the position of the atom on the surface can be moved by scanning the substrate surface while vibrating the probe. Note that the scanning speed of the probe 32 at this time is appropriately adjusted according to the crystal structure (crystal direction) of the substrate 51 and the type of atoms 80.

  In addition, moving an atom using STM is shown by the nonpatent literature 1, for example, and it is pointed out that Van der Waals force may act on a probe. However, the above-described prior art does not have a function of measuring the force acting on the tip of the probe, and has not been able to prove it. Also, van der Waals force is a long-range force among atomic forces, and it is impossible to judge whether it is an element that really moves the atom. On the other hand, in the present invention, the atomic force can be measured by AFM, and it can be determined by what kind of atomic force the atom is moved from its distance dependency. Therefore, since it is confirmed that a predetermined interatomic force has acted on the probe 32 and the probe 32 is moved, the atoms can be reliably moved to a desired position.

  As the atomic manipulation device, as shown in FIG. 1, the probe 10 and the sample S are controlled based on a signal related to the change amount of the mechanical resonance frequency output from the AFM 20 (FM demodulator 25) by the controller 10. However, the atomic force acting on the probe 32 and the sample S is determined based on the distance between the probe 32 and the sample S. The atomic force may be adjusted by controlling the distance between the probe 32 and the sample S, and it is not always necessary to directly detect the atomic force.

FIG. 17 is a block diagram showing another configuration example of the atomic manipulation device according to Embodiment 1 of the present invention.
The atomic operation device 2 according to the present invention includes a control unit 10 composed of a CPU. The control unit 10 is connected to the ROM 11, RAM 12, operation unit 13, display unit 14, and STM 120. The STM 120 includes a probe 32, a sample table 22 on which the sample S is placed, and a scanning piezoelectric element 23 that drives and controls the sample table 22 in a three-dimensional direction. Further, the STM 120 includes a voltage application / current detection unit 121 and a feedback controller unit 122.

  A voltage is applied between the probe 32 and the sample S by the voltage application / current detection unit 121, the probe 32 is brought close to the surface of the sample S, and a tunnel current flowing between the probe 32 and the sample S is generated. The voltage application / current detection unit 121 detects the voltage. Since the magnitude of the tunnel current is determined in accordance with the distance between the probe 32 and the sample S, the probe 32 and the sample S are moved according to the value of the tunnel current detected by the voltage application / current detection unit 121. The distance can be estimated.

  Therefore, the feedback controller unit 122 controls the driving of the scanning piezoelectric element 23 in the Z direction based on the value of the tunnel current detected by the voltage application / current detection unit 121, that is, the probe 32 and the sample S By controlling the distance, the atomic force acting between the probe 32 and the sample S is adjusted. That is, when manipulating the positions of two adjacent atoms on the substrate surface, it is possible to adjust the atomic force by estimating the distance between the probe 32 and the sample S from the value of the tunnel current, It is not always necessary to detect the interatomic force directly. Since other configurations are the same as those in FIG. 1, the corresponding parts are denoted by the same reference numerals, and detailed description thereof is omitted. Note that the control unit 10 according to the present embodiment determines whether or not the distance between the probe 32 and the sample S is within a predetermined range. If it is determined that the distance is within the predetermined range, the probe 32 is kept in that state. A scanning signal is generated so as to scan in a predetermined direction, and driving of the scanning piezoelectric element 23 in the X direction and the Y direction is controlled by the scanning signal. In this way, the scanning direction of the probe 32 with respect to the sample S is controlled (hereinafter the same).

  In FIG. 17, the scanning piezoelectric element 23 provided on the sample S side is controlled to be driven in the Z direction by the feedback controller unit 122, but a driving element 123 such as a piezoelectric element is provided on the probe 32 side. The feedback controller unit 122 may control the driving of the driving element 123 in the Z direction.

FIG. 18 is a block diagram showing another configuration example of the atomic manipulation device according to Embodiment 1 of the present invention.
The atomic operation device 3 according to the present invention includes a control unit 10 composed of a CPU. The control unit 10 is connected to a ROM 11, a RAM 12, an operation unit 13, a display unit 14, and a near-field scanning optical microscope (NSOM) 220. The NSOM 220 includes a probe 32, a sample stage 22 on which the sample S is placed, and a scanning piezoelectric element 23 that drives and controls the sample stage 22 in a three-dimensional direction. Further, the NSOM 220 includes a laser 221, a polarizing element 222, a first half mirror 223, a lens 224, an optical fiber 225, a second half mirror 226, a spectroscopic element 227, a detection unit 228, and a feedback controller unit 229.

  The light emitted from the laser 221 is polarized by the polarizing element 222 and guided to the first half mirror 223. The light traveling straight through the first half mirror 223 is collected by the lens 224 and guided to one end of the optical fiber 225. The other end of the optical fiber 225 is connected to the probe 32. The tip of the probe 32 has a minute opening 32a, and the sample S is irradiated with light through the opening 32a. Due to the structure of the sample S itself, a near field localized to the characteristic size exists on the surface of the sample S, and scattered light is generated based on the near field interaction between the probe 32 and the sample S. Arise. Since the diameter of the opening 32a becomes spatial resolution (that is, distance resolution), it is preferable to sharpen the probe 32 by performing chemical etching or the like.

  The scattered light is guided to the lens 224 through the optical fiber 225. Then, the scattered light is collected by the lens 224, reflected by the surfaces of the first half mirror 223 and the second half mirror 226, the traveling direction thereof is changed, and the light is guided to the spectroscopic element 227. The scattered light separated by the spectroscopic element 227 is detected by the detection unit 228. Since the magnitude of the near-field interaction is determined according to the distance between the probe 32 and the sample S, the probe 32 and the sample S are determined according to the spectral distribution and intensity of the scattered light detected by the detection unit 228. Can be estimated.

  Therefore, the feedback controller unit 229 controls the driving of the scanning piezoelectric element 23 in the Z direction based on the spectral distribution and intensity of the scattered light detected by the detection unit 228, that is, the distance between the probe 32 and the sample S. By controlling the atomic force acting between the probe 32 and the sample S. That is, when manipulating the positions of two adjacent atoms on the substrate surface, the atomic force can be adjusted by estimating the distance between the probe 32 and the sample S based on the spectral distribution and intensity of the scattered light. Therefore, it is not always necessary to directly detect the interatomic force. Since other configurations are the same as those in FIG. 1, the corresponding parts are denoted by the same reference numerals, and detailed description thereof is omitted.

  In FIG. 18, in the illumination-collection (IC) mode in which the sample S is irradiated with the near field and the scattered light generated based on the near field interaction is collected, the aperture 32a of the probe 32 is used. Although the example has been described, the Illumination (I) mode using the opening 32a of the probe 32 when the sample S is irradiated with the near field, and the probe when collecting the scattered light generated based on the near field interaction A Collection (C) mode using 32 openings 32a may be used. Further, a driving element (not shown) such as a piezoelectric element may be provided on the probe 32 side, and the feedback controller unit 229 may control driving of the driving element in the Z direction.

FIG. 19 is a block diagram showing another configuration example of the atomic manipulation device according to Embodiment 1 of the present invention.
The atomic operation device 4 according to the present invention includes a control unit 10 composed of a CPU. The control unit 10 is connected to a ROM 11, a RAM 12, an operation unit 13, a display unit 14, and a scanning capacitance microscope (SCM: Scanning Capacitance Microscopy) 320. The SCM 320 includes a probe 32, a sample stage 22 on which the sample S is placed, and a scanning piezoelectric element 23 that drives and controls the sample stage 22 in a three-dimensional direction. Further, the SCM 320 includes a bias power source 321, an AC power source 322, a capacitance detection unit 323, a lock-in amplifier 324, and a feedback controller unit 325.

  An offset AC voltage is applied between the probe 32 and the sample S using the bias power source 321 and the AC power source 322. Since the electrostatic capacitance between the probe 32 and the sample S is extremely small and it is difficult to detect the absolute value thereof, the electrostatic capacitance between the probe 32 and the sample S is determined as the electrostatic capacitance detection unit 323. The amount of change in capacitance is detected by the lock-in amplifier 324. Since the magnitude of the capacitance is determined according to the distance between the probe 32 and the sample S, the distance between the probe 32 and the sample S can be estimated from the capacitance.

  Therefore, the feedback controller unit 325 controls the driving of the scanning piezoelectric element 23 in the Z direction based on the detected capacitance, that is, by controlling the distance between the probe 32 and the sample S, thereby providing the probe 32. And the atomic force acting between the sample S and the sample S is adjusted. That is, when manipulating the positions of two adjacent atoms on the surface of the substrate, it is possible to adjust the atomic force by estimating the distance between the probe 32 and the sample S based on the capacitance. It is not necessary to detect the atomic force directly. Since other configurations are the same as those in FIG. 1, the corresponding parts are denoted by the same reference numerals, and detailed description thereof is omitted.

  In FIG. 19, the scanning piezoelectric element 23 provided on the sample S side is controlled to be driven in the Z direction by the feedback controller unit 325. However, a driving element 326 such as a piezoelectric element is provided on the probe 32 side. The feedback controller unit 325 may control the driving of the driving element 326 in the Z direction.

  Atoms on the substrate surface can be manipulated by performing the same atom manipulation method as in the first embodiment using the atom manipulation devices 2, 3, and 4 of each configuration described above. The distance between the sample S and the surface of the substrate S may be controlled to adjust the atomic force, and the probe 32 may be scanned while maintaining a state in which the predetermined atomic force is applied to the probe 32. 1 is the same as in FIG.

  As described above in detail, the gist of the present invention is embedded in the substrate by operating the probe while maintaining a state where a predetermined atomic force is acting on the probe and the atom. Even if it is an atom (a stable atom that does not diffuse even at room temperature because it is strongly bonded to the base atom), it can be manipulated. Conventional techniques (see, for example, Non-Patent Document 1) control the position of atoms by scanning a probe in a direction in which atoms that are bonded to a substrate with a weak adsorption force are desired to be moved. As described in Embodiment 1, the target atom can be moved in the target direction while exchanging positions with adjacent atoms.

  Moreover, even if the conventional technique (for example, refer to Non-Patent Document 1) controls the distance by the tunnel current, the location where the current easily flows does not necessarily match the atomic position. Although it is impossible to control the distance reflected in the unevenness, in the present invention, the atom can be manipulated while directly or indirectly measuring the force acting on the atom, so that the target atom is reliably moved in the target direction. can do.

  As mentioned above, although the specific embodiment was shown and demonstrated about the atomic operation method and atomic operation apparatus which concern on this invention, this invention is not limited to these. A person skilled in the art can add various changes or improvements to the configurations and functions of the invention according to the above-described embodiments without departing from the gist of the present invention.

It is a block diagram which shows the structural example of the atomic operation apparatus which concerns on Embodiment 1 of this invention. It is explanatory drawing which shows the atomic operation method which concerns on Embodiment 1 of this invention. It is explanatory drawing which shows the atomic operation method which concerns on Embodiment 1 of this invention. It is sectional drawing which shows the method of embedding Sn atom in the substrate surface of single crystal Ge. It is an image which shows the arrangement | sequence of the atom of the board | substrate surface before atomic operation. It is an image which shows the arrangement | sequence of the atom on the substrate surface after atomic operation. It is an image during atomic manipulation. It is an image which shows the example of application of the atomic operation method which concerns on Embodiment 1 of this invention. It is explanatory drawing which shows the atomic operation method which concerns on Embodiment 2 of this invention. It is explanatory drawing which shows the atomic operation method which concerns on Embodiment 2 of this invention. It is an image which shows the arrangement | sequence of the atom of the board | substrate surface before atomic operation. It is an image which shows the arrangement | sequence of the atom on the substrate surface after atomic operation. It is a top view which shows the other example of the scanning direction of a probe. It is explanatory drawing which shows the atomic operation method which concerns on Embodiment 3 of this invention. It is an image which shows the arrangement | sequence of the atom of the board | substrate surface before atomic operation. It is an image which shows the arrangement | sequence of the atom on the substrate surface after atomic operation. It is a block diagram which shows the other structural example of the atomic operation apparatus which concerns on Embodiment 1 of this invention. It is a block diagram which shows the other structural example of the atomic operation apparatus which concerns on Embodiment 1 of this invention. It is a block diagram which shows the other structural example of the atomic operation apparatus which concerns on Embodiment 1 of this invention.

Explanation of symbols

1, 2, 3, 4 Atomic operation device 10 Control unit 11 ROM
12 RAM
13 Operation unit 13a Scan start position input unit 13b Scan end position input unit 14 Display unit 20 AFM
21 Scanning Unit 22 Sample Stand 23 Scanning Piezoelectric Element 24 Displacement Detection Unit 25 FM Demodulation Unit 26 AGC Unit (Automatic Gain Control Unit)
27 Phase Shifter 28 Feedback Controller 30 Exchange Judgment Unit 31 Cantilever 32 Probe 33 Excitation Piezoelectric Element 51 Substrate 60, 60a Sn Atom 70, 70a, 70b, 70c, 70e, 70f Ge Atom 80 Atom 120 STM
121 Voltage application / current detection unit 122 Feedback controller unit 220 NSOM
221 Laser 228 Detection unit 229 Feedback controller unit 320 SCM
323 Capacitance detection unit 324 Lock-in amplifier 325 Feedback controller unit

Claims (18)

An atomic manipulation method of manipulating atoms on a substrate surface or atoms on a surface of a substrate surface using a probe on which an atomic force acts,
An atomic operation method characterized by operating the atoms on the surface of the substrate or the atoms on the surface of the substrate by scanning the probe in a state where a predetermined atomic force is applied. The probe is scanned in a direction substantially parallel to a straight line connecting two adjacent atoms on the surface of the substrate in a state where a predetermined atomic force is applied, and the positions of the two atoms are exchanged. The atomic operation method according to claim 1. Scanning the probe from a corresponding position of one of the two atoms to a corresponding position of the other atom in a state where the predetermined atomic force is applied;
3. The scanning of the probe from the corresponding position of the other atom to the corresponding position of the one atom is repeated in a state where an atomic force weaker than the predetermined atomic force is applied. The atomic manipulation method described. 2. The atom of the substrate surface is extracted from the substrate surface by scanning the probe in a direction substantially parallel to the substrate surface in a state where a predetermined interatomic force is applied. Atom manipulation method. 2. The position of an atom on the surface of the substrate surface is moved by scanning the probe in a direction substantially parallel to the substrate surface in a state where a predetermined atomic force is applied. The atomic manipulation method described. The atomic operation method according to claim 2, wherein the atom is operated while measuring an interatomic force acting between the probe and an operation target atom. The atomic operation method according to claim 2 or 3, wherein an atomic force is adjusted by controlling a distance of the probe from the substrate surface. The current flowing between the probe and the substrate surface is detected, and the atomic force is adjusted by controlling the distance of the probe from the substrate surface based on the detected current. 8. The atomic operation method according to 7. The probe surface or the substrate surface is irradiated with light to generate near-field light, scattered light based on near-field interaction between the probe and the substrate surface is detected, and the probe is detected based on the detected scattered light. The atomic operation method according to claim 7, wherein an atomic force is adjusted by controlling a distance of a needle from the substrate surface. Detecting a capacitance between the probe and the substrate surface, and adjusting an atomic force by controlling a distance of the probe from the substrate surface based on the detected capacitance. The atomic operation method according to claim 7. An atomic manipulation device comprising a probe on which an interatomic force acts, and exchanging positions of two adjacent atoms on a substrate surface,
A determination unit for determining whether or not the atomic force acting on the probe is within a predetermined range;
When the determination unit determines that the atomic force is within a predetermined range, the probe is scanned in a direction substantially parallel to a straight line connecting the two atoms in a state where the atomic force is applied. An atomic operation device comprising: a scanning unit. An atomic manipulation device comprising a probe on which an atomic force acts, and manipulating the position of an atom on a substrate surface or a surface of the substrate surface,
A determination unit for determining whether or not the atomic force acting on the probe is within a predetermined range;
A scanning unit that scans the probe in a direction substantially parallel to the substrate surface in a state where the atomic force is applied when the determination unit determines that the atomic force is within a predetermined range; An atomic operation device comprising: The apparatus according to claim 11 or 12, further comprising means for changing a separation length between the probe and the substrate surface when the determination unit determines that the atomic force is not within a predetermined range. The atomic operation device described. An atomic manipulation device comprising a probe on which an interatomic force acts, and exchanging positions of two adjacent atoms on a substrate surface,
A control unit for controlling the distance between the probe and the substrate surface;
A determination unit for determining whether or not the distance is within a predetermined range;
When the determination unit determines that the distance is within a predetermined range, the probe is scanned in a direction substantially parallel to a straight line connecting the two atoms with an atomic force based on the distance. An atomic operation device comprising: a scanning unit that performs: A detection unit for detecting a current flowing between the probe and the substrate surface;
The atomic operation device according to claim 14, wherein the control unit controls the distance of the probe from the substrate surface based on the current detected by the detection unit. An irradiator that irradiates light on the probe or the substrate surface to generate near-field light; and
A detector for detecting scattered light based on near-field interaction between the probe and the substrate surface;
The atomic operation device according to claim 14, wherein the control unit controls a distance of the probe from the substrate surface based on scattered light detected by the detection unit. A detection unit for detecting a capacitance between the probe and the substrate surface;
The atomic operation device according to claim 14, wherein the control unit controls a distance of the probe from the substrate surface based on an electrostatic capacitance detected by the detection unit. .   11. An identification body forming method, wherein atoms are manipulated by the atomic manipulation method according to claim 1 to form an atomic size identification body on a substrate surface.

Images