JP2006100672A - Method and apparatus for processing sample by plasma processing - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an etching method capable of forming a capacitor in which the generation of a leakage current is suppressed by reducing the adhesion of reactive products to the sidewall of a pattern in the processing of an FeRAM device capacitor, capable of suppressing the generation of foreign substance and suitable for device mass production. <P>SOLUTION: In a sample processing method for etching the sample of an FeRAM device consisting of the laminated structure of lower electrode layers 29, 30 formed on the surface of a semiconductor substrate 27 by using a noble metal material or its oxide, a ferroelectric layer 31 such as SBT and PZT and an upper electrode layer 32 formed by using a noble metal material or its oxide by plasma processing collectively or in division several times, plasma processing using mixed gas in a range of 68-95% oxygen, 3-30% chlorine and 2-15% fluorine is performed in the etching processing for forming the patterns of the lower electrode layers 29, 30. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a sample processing method and a sample processing apparatus for processing a sample including a ferroelectric layer using plasma, and more particularly to a sample processing method and a sample processing apparatus by plasma processing suitable for etching a sample of an FeRAM device. It is about.

A ferroelectric random access memory (FeRAM) is a memory in which a capacitor portion of a DRAM is replaced with a ferroelectric capacitor, and data is recorded using the hysteresis characteristic of the ferroelectric. As the ferroelectric capacitor material, bismuth strontium tantalate (SBT), lead zirconate titanate (PZT), or the like is used. These materials require high temperature treatment at 400 ° C. or higher in an oxygen atmosphere for crystallization and property improvement. At this time, since the SiO ₂ layer is formed on the surface layer of the same Si electrode as that of the DRAM and the dielectric characteristics deteriorate, a noble metal material excellent in heat resistance and oxygen resistance or its oxide is used as the electrode material.

A typical FeRAM capacitor portion has a laminated structure of an upper electrode layer, a ferroelectric layer, and a lower electrode layer formed on a semiconductor substrate. Plasma dry etching is often selected to form these fine patterns. In order to perform finer processing, the laminated structure is etched almost vertically by a single mask. As gas systems used in conventional etching, boron trichloride (BCl ₃ ) + argon (Ar) is known as a ferroelectric material, oxygen (O ₂ ) + chlorine (Cl ² ) is known as an electrode material, and the like. (For example, see Patent Documents 1 and 2).
JP 2003-282844 A JP 2003-318371 A

  The above prior art has not been sufficiently considered in terms of the influence of the reaction product produced by etching on the sample and the processing apparatus, and has the following problems.

  The electrodes and ferroelectric materials used for the capacitor part of FeRAM devices are all non-volatile materials with low volatility. Therefore, the melting point and boiling point of reaction products generated by etching these materials are very high. These reaction products cannot be easily exhausted. For this reason, the reaction product is likely to be re-adsorbed to the sample. Particularly, the reaction product generated during the etching of the lower electrode layer adheres to the sidewalls of the upper electrode layer and the ferroelectric layer, and leaks from the capacitor section. Increases and causes deterioration of device characteristics.

  In addition, since the reaction product also adheres to the inner wall of the processing chamber, the etching performance changes with time and a large amount of foreign matter is generated, so that repeated wet cleaning is required and the mass production productivity is reduced.

  An object of the present invention is to provide a plasma processing method and a plasma processing apparatus capable of reducing device deterioration and improving mass productivity.

  An object of the present invention is to provide a plasma processing method for etching a capacitor portion of an FeRAM device having a laminated structure of an upper electrode layer, a ferroelectric layer and a lower electrode layer formed on a semiconductor substrate in a batch or several times. The etching process for forming the pattern of the lower electrode layer is achieved by performing a plasma treatment using a mixed gas in the range of 68 to 95% oxygen, 3 to 30% chlorine, and 2 to 15% fluorine.

  That is, the present invention relates to an upper electrode layer using a noble metal material or an oxide thereof formed on a semiconductor substrate, a ferroelectric layer such as bismuth strontium tantalate (SBT) or lead zirconate titanate (PZT), a noble metal Etching to form a pattern of a lower electrode layer in a sample processing method in which a sample of an FeRAM device having a laminated structure of a lower electrode layer using a material or an oxide thereof is etched by plasma processing in a batch or several times For the processing, plasma treatment using a mixed gas in the range of oxygen 68 to 95%, chlorine 3 to 30% and fluorine 2 to 15% was performed.

In the above sample processing method, the present invention provides iridium (Ir), iridium oxide (IrO _x ), platinum (Pt), platinum oxide (PtO _x ) as materials to be etched for forming the pattern of the upper electrode layer and the lower electrode layer. , Iridium platinum alloy (IrPt), ruthenium (Ru), ruthenium oxide (RuO _x ), gold (Au), gold oxide (AuO _x ), silver (Ag), silver oxide (AgO _x ), palladium (Pd), oxide One of palladium (PdO _x ), rhodium (Rh), rhodium oxide (RhO _x ), or a mixture thereof can be used.

  In the sample processing method according to the present invention, the temperature of the sample or the electrode holding the sample is adjusted to 20 to 500 ° C. Further, according to the present invention, in the above sample processing method, after the just etching is determined by the etching process for forming the pattern of the lower electrode layer, overetching within a range of 200% is performed. Further, according to the present invention, in the sample processing method, plasma processing is performed using a mixed gas not containing hydrogen (H) in a mixed gas of a fluorine-containing compound that is a raw material gas.

  The present invention provides a sample processing apparatus for performing a sample processing method for etching a sample formed on a semiconductor substrate, receiving a plasma forming gas, generating a gas plasma, and forming a noble metal formed on the substrate. An etching apparatus for etching a single layer film or a laminated film of the material is provided, and the single layer film or the laminated film described above is etched by gas plasma.

  The present invention provides a sample processing apparatus comprising: an atmospheric loader; a vacuum transfer chamber having a vacuum transfer robot therein; and a load and unload lock chamber in which the atmospheric loader and the vacuum transfer chamber are connected to send a sample. And one or more etching processing chambers of the etching processing apparatus are connected to the vacuum transfer chamber. In the sample processing apparatus, the present invention is also provided with a function of adding a voltage application function to the etching chamber to suppress reaction product adhesion and remove the reaction product. Further, in the sample processing apparatus according to the present invention, an end point determination function by an emission monitoring method is added to the etching processing chamber, and the etching end point of the lower electrode layer is λ = 352 nm in the case of an Ir-based noble metal, In the case of λ = 341 nm in the case of Ru, and in the case of a Ru-based noble metal, the wavelength is determined to be λ = 373 nm.

  As described above, the present invention uses a mixed gas of oxygen, chlorine, and fluorine to etch the lower electrode layer in the processing of the FeRAM device capacitor portion, thereby reducing the adhesion of reaction products to the pattern sidewall and causing leakage. There is an effect that a capacitor portion with a small current can be formed.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS. As an etching processing apparatus, in a sample processing apparatus for etching a sample formed on a semiconductor substrate, an electrode material and a ferroelectric material formed on the substrate are supplied with plasma forming gas and generate gas plasma. A processing apparatus characterized by etching was used. As the plasma etching apparatus, a microwave plasma etching apparatus, an inductively coupled plasma etching apparatus, a helicon type plasma etching apparatus, a two-frequency excitation parallel plate type plasma etching apparatus, or the like is employed.

  FIG. 1 shows a cross-sectional view of a plasma processing apparatus used in the present invention. In the inside of the processing chamber, a processing unit 3 in which a discharge unit 2 made of a non-conductive material of quartz or ceramic that forms a plasma generation unit, a sample 12 to be processed, and an electrode 6 for arranging the sample 12 are arranged. It consists of. The processing unit 3 is installed on the ground, and the electrode 6 is attached to the processing unit 3 via an insulating material. Since the discharge unit 2 generates plasma, an inductively coupled antenna 1a / 1b, a matching unit 4, a first high-frequency power source 10 and the like are attached. In the present embodiment, as a typical example, an etching apparatus in which a coiled dielectric coupling antenna 1a / 1b is arranged on the outer periphery of the discharge part 2 is used. While the processing gas is supplied from the gas supply device 5 to the inside of the processing chamber, the processing chamber is evacuated to a predetermined pressure by the exhaust device 8. A processing gas is supplied from the gas supply device 5 into the processing chamber, and the processing gas is turned into plasma by the action of an electric field generated by the inductively coupled antenna 1a / 1b. In addition, a bias voltage is applied to the electrode 6 by the second high-frequency power supply 11 in order to draw ions present in the plasma 7 onto the sample 12.

  The end point of etching is determined based on the change in the intensity of the etching gas emitted by the light emission monitoring device 13 or the light emission intensity of the reaction product. In addition, it has a structure corresponding to etching of non-volatile materials such as noble metal materials. By applying a voltage to the Faraday shield 9, it is possible to suppress and remove the reaction product from the discharge part 2. The surface of the inner cover 15 and the surface of the electrode 6 installed inside the processing chamber 3 are subjected to roughening so that the reaction product once adhered does not peel off.

  The back surface of the susceptor 14 for placing the sample 12 on the electrode 6 is subjected to metal spraying, and application of voltage by the plasma 7 suppresses adhesion of reaction products on the surface of the susceptor 14. These parts are swap parts, and can be easily replaced during maintenance such as wet cleaning.

  The detailed structure of the electrode 6 will be schematically described with reference to the conceptual diagram of FIG. The electrode 6 is supported by a support shaft that moves up and down. In order to control the temperature of the electrode 6, the temperature is controlled by a circulating refrigerant 16 or a ceramic heater 17, and a cooling gas is introduced from a cooling gas introduction pipe 18. 6 and the sample 12 are conducted to control the temperature of the sample 12. An insulator 19 made of a ceramic material is mounted on the surface of the electrode 6. Further, in order to fix the sample 12 to the electrode 6, a voltage is applied to the electrode 6 from the DC power supply 20 for electrostatic adsorption, and the sample 12 is adsorbed and held.

  The outline of the configuration of the processing apparatus will be described with reference to the plan view of FIG. The atmospheric loader 21 is connected to the load lock chamber 22 and the unload lock chamber 23, and the load lock chamber 22 and the unload lock chamber 23 are connected to the vacuum transfer chamber 25. The vacuum transfer chamber 25 is connected to a plurality of etching processing chambers 26. The sample is transferred by the atmospheric loader 21 and the vacuum transfer robot 24 and is etched in the etching processing chamber 26.

In the apparatus configured as described above, the sample 12 shown in FIG. 4 was etched. A sample is formed on a semiconductor Si substrate 27 in the order of a TiN film 28 serving as a barrier layer, an Ir film 29 serving as a lower electrode layer, and a Pt film 30. Next, a PZT film 31 serving as a ferroelectric layer is formed on the lower electrode layer. Next, an IrO ₂ film 32 serving as an upper electrode layer is formed on the ferroelectric layer. Finally, an electronic circuit pattern is formed by the SiO ₂ film 33 serving as a mask. In addition, other materials used for the upper electrode layer and the lower electrode layer include platinum oxide (PtO _x ), iridium platinum alloy (IrPt), ruthenium (Ru), ruthenium oxide (RuO _x ), and gold (Au). ), Gold oxide (AuO _x ), silver (Ag), silver oxide (AgO _x ), palladium (Pd), palladium oxide (PdO _x ), rhodium (Rh), rhodium oxide (RhO _x ), and the like.

  FIG. 5 shows an effect example of the present invention. In the conventional method shown in FIG. 5A, the upper electrode, the ferroelectric material, and the lower electrode are etched together with a single mask. Alternatively, the upper electrode, the ferroelectric material, and the lower electrode are separately etched using several masks. As a result, a vertical etching shape of 85 ° or more is finally obtained. However, reaction products generated by etching adhere to the pattern sidewalls. The adhered reaction product becomes difficult to remove because the collision of ions decreases as the etching shape becomes vertical. The reaction product is mainly composed of Ir, Pt, etc., which are electrode materials. Since these substances are conductive, if they adhere to the pattern side wall, a leakage current is generated between the upper electrode and the lower electrode, causing deterioration of the device.

In the solution of FIG. 5 (b), by adding a fluorine gas such as tetrafluoromethane (CF ₄ ) or a fluorine-containing gas to the conventional etching gas composed of oxygen O ₂ and chlorine Cl ₂ , Reaction products such as iridium hexafluoride (IrF ₆ ) and platinum hexafluoride (PtF ₆ ) having good volatility are formed. Therefore, the reaction product generated by etching does not adhere to the pattern side wall and is easily exhausted. Further, Ir, Pt, etc. adhering to the pattern side wall can be removed by adding CF ₄ gas. However, since the gas described above reacts well with mask materials such as SiO ₂ and TiN, there is a concern that the selectivity with respect to the mask decreases and the upper electrode layer is exposed. Moreover, since Ir, Pt, etc. adhering to the inner wall of the processing chamber are also removed, it may cause a foreign matter. In the present invention, considering this point, a small amount of CF ₄ gas is added only to the etching of the lower electrode layer.

Etching conditions include: O ₂ gas 68 to 95 ml / min, Ci ₂ gas 3 to 30 ml / min, CF ₄ gas 2 to 15 ml / min, and processing pressure 0.3 to 2. 0 Pa, source high-frequency power 1200 to 1800 W, bias high-frequency power 300 to 1000 W, electrode temperature 20 to 500 ° C., and over-etching rate 0 to 200%. This etching process condition can be changed by setting the etching apparatus.

When etching is performed in several steps, the electrode temperature can be arbitrarily selected. For example, the upper electrode layer can be processed at 500 ° C., the ferroelectric layer can be etched at 20 ° C., and the lower electrode layer can be etched at 500 ° C. In this example, CF ₄ is added to O ₂ + Cl ₂ , but any gas containing fluorine is effective. For _example, such gas _{F 2, C 2 F 6,} C 3 F 8, C 4 F 8, C 5 F 8, NF 3, SF 6, SiF 4, WF 6, MoF fluorine gas or a fluorine compound such as ₆ A gas containing fluorine is practical. However, if a gas containing reducing H is selected, oxygen is taken away from the ferroelectric substance, which may cause oxygen defects and cause deterioration of device characteristics.

FIG. 6 shows the leakage current of the capacitor portion depending on the added amount of CF ₄ . As the amount of CF ₄ added is increased to 5, 10, 15 ml / min, the leakage current decreases. However, although the leakage current decreased at 20 ml / min, some measured values could not be obtained. When this portion was observed with a cross-sectional SEM, film peeling occurred from the PZT interface. This is presumably because the side etch progressed in PZT due to an excessive amount of CF ₄ added, and film peeling occurred. In addition, since the leakage current is greatly reduced with the addition amount of 5 ml / min, it is considered that there is an effect of removing the side wall reaction product even at 5 ml / min or less.

  FIG. 7 shows the capacitor portion leakage current due to the overetch time. Leakage current is reduced by performing 50% overetching time. Further, when processing time is extended to 100,200%, a uniform leakage current value is obtained in the wafer surface. However, further extension is not expected to decrease because there is no change in the leakage current value. Rather, there is a concern that the upper electrode layer is exposed due to pattern peeling or mask reduction, and that mass productivity is reduced due to an increase in processing time. Note that the setting of the overetch time depends on the design rules of the device, and the longer the time is required as the space between patterns is narrower.

  FIG. 8 shows the number of foreign matters after each treatment in the continuous treatment test under the etching conditions obtained in the present invention. Regarding the processing method, dry cleaning was performed every 25 sheets, and the processing was repeated up to 1000 sheets. As a result, although the number of processed particles tends to increase, the number of foreign particles having a particle diameter of 0.20 μm or more is generated and the number of foreign particles is kept as low as 60 per wafer surface. Further, the end point of 1000 sheets could be determined by detecting the Ir wavelength (λ = 352 nm) with the light emission monitoring device. If the emission wavelength of the material to be etched is captured, the end point of etching can be determined by the change in intensity. For example, λ = 341 nm in the Pt system and λ = 373 nm in the Ru system. For Au, Ag, Pd, and Ph, the end point can be determined by setting the emission wavelength here. From the above, in the present invention, it is possible to provide etching conditions suitable for device mass productivity without polluting the processing chamber.

  Table 1 shows etching conditions which are examples of the present invention.

In Table 1, the IrO ₂ film 32 of the upper electrode layer is etched under the step condition 1, the PZT film 31 of the ferroelectric layer is etched under the step condition 2, and the Pt film 30 and the Ir film 29 of the lower electrode layer are etched under the step 3 condition. . The gas flow rate indicates a flow rate per minute introduced into the processing unit 3. The processing pressure indicates the pressure inside the processing unit 3 when gas is introduced. The source high frequency power indicates the power applied from the first high frequency power supply 10. The bias high frequency power indicates the power applied from the second high frequency power supply 11. The Faraday shield voltage indicates a voltage applied to the Faraday shield 9. The coil current ratio indicates a ratio obtained by dividing the value of the current flowing through the upper portion 1a of the dielectric coupling antenna by the amount of current flowing through the lower portion 1b of the dielectric coupling antenna. The electrode temperature indicates the temperature of the ceramic heater 17. The electrode height indicates the height at which the electrode is raised from the transport surface on which the sample is transported to the processing unit 3. J. of end point determination. E is just etching. E indicates overetching. In addition, 10% O.D. E is to perform 10% overetching of the time required for just etching after end point determination.

In Step 1, the gas flow rates are BCl ₃ : 0 ml / min, Cl ₂ : 30 ml / min, O ₂ : 70 ml / min, Ar: 0 ml / min, CF ₄ : 0 ml / min, pressure: 0.3 Pa, source high frequency Power: 1800 W, bias high frequency power: 1000 W, Faraday shield voltage: 1000 V, coil current ratio: 0.5, electrode temperature: 400 ° C., electrode height: 30 mm, and end point determination is IrO ₂ J. E went.

In Step 2, which is a ferroelectric etching process, the gas flow rates are as follows: BCl ₃ : 30 ml / min, Cl ₂ : 0 ml / min, O ₂ : 0 ml / min, Ar: 70 ml / min, CF ₄ : 0 ml / min, Pressure: 0.3 Pa, source high frequency power: 1200 W, bias high frequency power: 600 W, Faraday shield voltage: 1000 V, coil current ratio: 0.5, electrode temperature: 400 ° C., electrode height: 30 mm, end point determination is PZTJ . E + 10% O.D. E went.

In Step 3, which is an etching process of the lower electrode, the gas flow rates are as follows: BCl ₃ : 0 ml / min, Cl ₂ : 20 ml / min, O ₂ : 70 ml / min, Ar: 0 ml / min, CF ₄ : 10 ml / min, pressure : 0.3 Pa, source high frequency power: 1800 W, bias high frequency power: 1000 W, Faraday shield voltage: 1000 V, coil current ratio: 0.5, electrode temperature: 400 ° C., electrode height: 30 mm, and the end point determination is IrJ. E + 50% O.D. E went.

  As described above, according to the present invention, in the processing of the FeRAM device capacitor portion, by using a mixed gas of oxygen, chlorine and fluorine for etching the lower electrode, it is possible to suppress reaction product adhesion to the pattern side wall. And a capacitor portion with little leakage current can be formed.

  In the processing of the FeRAM device capacitor part, the reaction product adheres to the side wall of the pattern by etching with plasma of a mixed gas obtained by adding a small amount of fluorine gas to oxygen + chlorine only in the lower electrode layer. It is possible to provide an etching method that forms a capacitor portion that is reduced and does not generate leakage current, and that is less likely to generate foreign matter and that is suitable for device mass productivity. Further, according to the present invention, by performing over-etching for a certain period of time after just etching the lower electrode layer, the reaction product adhesion to the pattern side wall is reduced, and a capacitor portion free from leakage current is formed. It is possible to prevent the deterioration of the material.

Sectional drawing explaining the structure of the plasma processing apparatus concerning this invention. Sectional drawing which shows typically the structure of the electrode of the plasma processing apparatus of FIG. The top view which shows the structure of the plasma processing apparatus concerning this invention. Sectional drawing which shows typically the structure of the sample used as the object of the process of this invention. The figure explaining the reaction product adhesion inhibitory effect at the time of capacitor part etching. The graph explaining the capacitor part leakage current measurement result in the plasma processing method of this invention. The graph explaining the capacitor part leakage current measurement result in the plasma processing method of this invention. The graph explaining the foreign material measurement result at the time of the continuous process in the plasma processing method of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1a / 1b ... Inductive coupling antenna, 2 ... Discharge part, 3 ... Processing part, 4 ... Matching device, 5 ... Gas supply device, 6 ... Electrode, 7 ... Plasma, 8 ... Exhaust device, 9 ... Faraday shield, 10 ... First DESCRIPTION OF SYMBOLS 1 1 high frequency power supply, 11 ... 2nd high frequency power supply, 12 ... Sample, 13 ... Luminescence monitoring device, 14 ... Susceptor, 15 ... Inner cover, 16 ... Circulating refrigerant, 17 ... Ceramic heater, 18 ... Cooling gas introduction pipe, 19 DESCRIPTION OF SYMBOLS ... Insulator, 20 ... Power supply for electrostatic attraction, 21 ... Atmospheric loader, 22 ... Load lock chamber, 23 ... Unload lock chamber, 24 ... Vacuum transfer robot, 25 ... Vacuum transfer chamber, 26 ... Etching chamber, 27 ... Si substrate, 28 ... TiN film, 29 ... Ir film, 30 ... Pt film, 31 ... PZT film, 32 ... IrO ₂ film, 33 ... SiO ₂ film

Claims (15)

In a plasma processing method in which an FeRAM device sample having a laminated structure of an upper electrode layer, a ferroelectric layer, and a lower electrode layer formed on a semiconductor substrate is etched in batches or several times.
A sample processing method comprising performing plasma processing using a mixed gas of oxygen, chlorine, and a fluorine-containing compound in an etching process for forming a pattern of a lower electrode layer.   2. The sample processing method according to claim 1, wherein the material to be etched for forming the pattern of the upper electrode layer and the lower electrode layer is a noble metal material or an oxide thereof. 3. The sample processing method according to claim 2, wherein the material to be etched is iridium (Ir), iridium oxide (IrO _x ), platinum (Pt), platinum oxide (PtO _x ), iridium platinum alloy (IrPt), ruthenium (Ru). ), Ruthenium oxide (RuO _x ), gold (Au), gold oxide (AuO _x ), silver (Ag), silver oxide (AgO _x ), palladium (Pd), palladium oxide (PdO _x ), rhodium (Rh), A sample processing method comprising rhodium oxide (RhO _x ).   The sample processing method according to claim 1, wherein the temperature of the sample or the electrode holding the sample is adjusted to 20 to 500 ° C.   2. The sample processing method according to claim 1, wherein the etching process for forming the pattern of the lower electrode layer uses a mixed gas in the range of 68 to 95% oxygen, 3 to 30% chlorine, and 2 to 15% fluorine. Sample processing method.   2. The sample processing method according to claim 1, wherein overetching within a range of 0 to 200% is performed after determining just etching by etching processing for forming a pattern of the lower electrode layer.   2. The sample processing method according to claim 1, wherein plasma processing is performed using a mixed gas not containing hydrogen (H) in a mixed gas of a fluorine-containing compound that is a raw material gas. In a sample processing apparatus for executing a sample etching method that generates a nonvolatile gas by etching using a processing gas consisting of oxygen gas and chlorine gas,
An etching apparatus is provided for receiving a plasma forming gas, generating gas plasma, and etching a single layer film or a multilayer film of a noble metal material formed on the substrate, and the single layer film or the multilayer film described above is converted into an oxygen gas. Etching with a gas plasma using a mixed gas of chlorine gas and fluorine or a gas containing fluorine.   9. The sample processing apparatus according to claim 8, comprising: an atmospheric loader; a vacuum transfer chamber having a vacuum transfer robot therein; and a load and unload lock chamber in which the atmospheric loader and the vacuum transfer chamber are connected to send a sample. And an etching processing chamber of the etching processing apparatus is connected to the vacuum transfer chamber.   9. The sample processing apparatus according to claim 8, wherein the etching processing chamber includes one or a plurality of etching processing chambers.   9. The sample processing apparatus according to claim 8, wherein a voltage applying function is added to the etching processing chamber to have a function of suppressing reaction product adhesion and removing the reaction product. .   9. The sample processing apparatus according to claim 8, wherein an end point determination function by a light emission monitoring method is added to the etching processing chamber, and the etching end point wavelengths of the lower electrode layer are Ir type λ = 352 nm, Pt type λ = 341 nm, and Ru type λ. = Sample processing apparatus with 373 nm. A discharge unit for forming a plasma generating unit having a coiled dielectric coupling antenna disposed on the outer periphery of the Faraday shield; a processing chamber having an electrode for arranging a sample; and a gas supply device for supplying a processing gas to the processing chamber. Processing a sample having a first high-frequency power source for generating plasma, a second high-frequency power source for applying a bias voltage to the electrode, and a light emission monitoring device, and etching a sample formed on a semiconductor substrate A device,
An apparatus for processing a sample, characterized in that the surface of an inner cover and the surface of an electrode installed inside a processing chamber are roughened.   14. The sample processing apparatus according to claim 13, wherein the light emission monitoring device is a means for determining an etching end point by detecting a change in the intensity of the etching gas that emits light or the light emission intensity of the reaction product. apparatus.   14. The sample processing apparatus according to claim 13, further comprising a susceptor for placing the sample on the electrode, wherein the back surface of the susceptor is subjected to metal spraying.

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