JP2006098300A - Infrared light radiation device, infrared light detection device, and time series conversion pulse spectroscopic measurement device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an infrared light radiation device capable of performing measurement of a broad band without being affected by absorption of a substrate. <P>SOLUTION: The infrared light radiation device comprises a photo-conductive film 22 for receiving pulse excitation light and producing a light carrier, a pair of antenna electrode films 21 that are formed on one side surface of the photo-conductive film 22, are arranged between the tips via a clearance 21a, and radiate the infrared light, and an infrared light transmitting member 24 that is formed in a region disposed on the other side of the photo-conductive film 22 and at least corresponding to the clearance 21a and transmits far infrared light. As the infrared light transmitting member 24, diamond-like carbon is used suitably. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an infrared light radiation device, an infrared light detection device, and a time-series conversion pulse spectroscopic measurement device.

  In recent years, radiation technology and detection technology for electromagnetic waves in a pulsed coherent infrared region (0.01 to 130 THz) have been remarkably advanced by the practical application of ultrashort pulse laser technology. As a result, time-series conversion pulse spectroscopy using this pulsed infrared electromagnetic wave has become possible, and development has been pioneered toward the practical application of the time-series conversion pulse spectrometer.

  Time-series conversion pulse spectroscopy is the measurement of the time-dependent electric field strength of a pulsed electromagnetic wave, and the time-dependent data (time-series data) is subjected to Fourier transform, whereby each frequency component forming the pulse is measured. This is a spectroscopic method for obtaining electric field strength and phase. One of the features of this spectroscopic method is that the measurement wavelength region is a boundary region between light and radio waves, which has been difficult in the past. Therefore, elucidation of the properties of new materials and new phenomena is expected by this spectroscopy. In addition, in the conventional spectroscopy, only the electric field strength of the electromagnetic wave was obtained, but in this time-series conversion pulse spectroscopic measurement method, since the time change of the electric field strength of the electromagnetic wave is directly measured, only the electric field strength (amplitude) of the electromagnetic wave is obtained. Not only that, it has the unique feature of being able to obtain its phase. Therefore, a phase shift spectrum can be obtained by comparing with the case where there is no sample. Since the phase shift is proportional to the wave vector, the dispersion relation in the sample can be determined using this spectroscopy, and the dielectric constant of the dielectric material can be obtained from this dispersion relation (Patent Document). 1).

FIG. 5 shows an example of a conventional time-series conversion pulse spectrometer.
A femtosecond laser is used as the light source 1. As the light source 1, for example, a mode-locked, erbium (Er) -doped fiber laser is used. The mode-locked fiber laser 1 transmits, for example, an average power of 10 mW, a femtosecond laser pulse L1 at a wavelength of 780 nm, a time width of 120 femtoseconds, and a repetition frequency of 48.5 MHz.
The femtosecond laser pulse L 1 emitted from the light source 1 is divided by the beam splitter 2. One femtosecond laser pulse is applied to the pulsed light radiation means (infrared light radiation device) 5 as the excitation pulsed laser light L2. At this time, the excitation pulse laser beam L2 is modulated by the optical chopper 3 and then condensed by the objective lens 4. The pulsed light radiating means 5 is, for example, a photoconductive element, and when the excitation pulse laser light L2 is irradiated, a current flows instantaneously and radiates a far-infrared light pulse L3. The far-infrared light pulse (THz (terahertz) light pulse) L3 is guided by the parabolic mirrors 6 and 7 and irradiated onto the measurement sample 8. The reflected or transmitted pulsed light (transmitted pulsed light in the figure) L3 ′ of the sample 8 is guided to the detecting means (infrared light detecting device) 12 through the parabolic mirrors 9 and 10.

  The other laser beam split by the beam splitter 2 is guided to the detection means 12 as a detection pulse laser beam L4. This detection means 12 is also a photoconductive element, and is irradiated with the detection pulse laser beam L4 and becomes conductive only at that moment. Therefore, the electric field intensity of the reflected or transmitted pulsed light from the sample 8 that has reached that moment is determined as a current. Can be detected as The time-series signal of the electric field intensity of the reflected or transmitted pulsed light from the sample 8 is transmitted to the detection pulse laser light L4 for a predetermined time with respect to the excitation pulse laser light L2 using the optical delay means 13 (or 14). It can be obtained by giving a delay time difference at intervals. In the figure, in addition to the optical delay means 13 (or 14) for time series signal measurement, an optical delay means 14 (or 13) for time origin adjustment is also provided.

  Each time-resolved data of the electric field intensity of the reflected or transmitted pulsed light of the sample 8 is processed by the signal processing means. That is, it is transmitted to the computer 17 via the lock-in amplifier 16 and is sequentially stored as time-series data, and the series of time-series data is subjected to Fourier transform processing by the computer 17 and converted to a frequency (frequency) space. Thus, the spectrum of the amplitude and phase of the electric field strength of the reflected or transmitted pulse electromagnetic wave of the sample 8 is obtained.

  FIG. 6 shows the pulsed light emission means 5. The pulsed light radiating means 5 uses a photoconductive switch element (antenna electrode film) having a dipole antenna structure formed on a photoconductive film made of low-temperature grown gallium arsenide (LT (Low Temperature) —GaAs). For generation of the terahertz radiation light L3, the pulsed light radiation means 5 is irradiated with the excitation pulse laser light L2, to induce free carriers of electrons and holes, and by performing ultra-high-speed current modulation, The terahertz radiation L3 is obtained. That is, when the excitation pulse laser beam L2 is applied to the pulsed light emitting means 5 to which the bias current is applied, the electric field is shaken. When the electric field is swayed, the current is swayed, so that the continuous sport distribution is distributed over the frequency (frequency) range defined by the time width Δt of the excitation pulse laser beam L2 irradiated to the pulsed electromagnetic wave radiation element 5. The terahertz radiation light L3 having

  The detection means 12 has the same configuration as the pulsed light radiation means 5 shown in FIG. When the detection means 12 is irradiated with the sample transmission terahertz light L3 'and the detection pulse laser light L4 at the same time, the intensity of the sample transmission terahertz light L3' during the irradiation of the detection pulse laser light L4 can be measured.

  FIG. 7 shows an antenna electrode film 21 formed on a photoconductive film 22 made of LT-GaAs. As the antenna electrode film 21, gold (Au) is used. A gap of about 5 μm is formed between the pair of antenna electrode films 21 as shown on the right side of FIG. The width of the antenna electrode film is about 10 μm.

FIG. 8 is a cross-sectional view taken along the line AA ′ of the antenna peripheral portion 21c shown in FIG. As can be seen from the figure, the photoconductive film 22 is formed on a substrate 23 made of semi-insulating gallium arsenide (SI (Semi Insulated) -GaAs).
When used as the pulsed light radiating means 5, the excitation pulsed laser light L <b> 2 is irradiated to the antenna electrode film 21 side (one side face) (from the top in the drawing) as viewed from the photoconductive film 22. The terahertz radiation L3 is radiated (downward in the drawing) to the substrate 23 side (the other side surface) as viewed from the photoconductive film 22.
When used as the detection means 12, the detection pulse laser beam L4 is irradiated to the antenna electrode film 21 side (one side) as viewed from the photoconductive film 22 (from above in the figure). The sample transmission terahertz light L3 ′ is irradiated from the substrate 23 side (other side) as viewed from the photoconductive film 22 (from the lower side in the figure).

JP 2002-277394 A

When the pulsed light emission means 5 and the detection means 12 having the above configuration are used, the following problems occur.
As shown in FIG. 9, SI-GaAs used for the substrate 23 has an absorption band due to phonons from 100 to 400 cm ⁻¹ . In other words, it decreases the transmittance abruptly exceeds 100 cm ^-1, at 240 cm ^-1 or more has a property that does not transmit most light even exceed 300 cm ^-1.
Further, since SI-GaAs absorbs the excitation laser pulse light, it is necessary to employ a configuration in which the excitation pulse laser light L2 is irradiated from the antenna electrode film 21 side (one side) opposite to the substrate 23. . Therefore, when used as the pulsed light radiating means 5, the terahertz light emitted by the antenna electrode film 21 must be transmitted through the substrate 23. Then, SI-GaAs has an absorption band from 100 to 400 cm ⁻¹ as described above, and thus there is a problem that broadband terahertz light cannot be sufficiently extracted.

  Even when used as the detection means 12, since the sample transmission pulse laser beam L3 'is transmitted from the substrate 23 side and detected, absorption by SI-GaAs phonons has been a problem.

  The present invention has been made in view of such circumstances, and is an infrared light emission device, an infrared light detection device, and time-series conversion pulse spectroscopy capable of performing broadband measurement without being affected by the absorption of the substrate. It aims at providing a measuring device.

In order to solve the above problems, the infrared light emitting device, infrared light detecting device, and time-series conversion pulse spectroscopic measuring device of the present invention employ the following means.
That is, the infrared light emitting device according to the present invention is formed on a side surface of a photoconductive film that is irradiated with pulsed excitation light and generates a photocarrier, and a gap between the tips of the photoconductive film. A pair of antenna electrode films that emit infrared light and an infrared light transmitting member that is formed on the other side surface of the photoconductive film and at least in a region corresponding to the gap, and transmits the infrared light. And.

Since the infrared light transmitting member that transmits infrared light is used, infrared light can be emitted from the other side surface of the photoconductive film without loss.
In addition, the infrared light transmitting member only needs to be formed in a region corresponding to a gap formed between at least a pair of antenna electrode films, and not only when the infrared light transmitting member is disposed only in a region corresponding to this gap, You may arrange | position to the whole containing the area | region corresponding to a clearance gap. For example, the substrate provided on the other side surface of the photoconductive film may be diamond-like carbon that transmits far-infrared light.
In addition, the infrared light transmitting member may be provided in direct contact with the other side surface of the photoconductive film, or may be provided indirectly through a substrate portion that is thinner than the surrounding substrate thickness. Also good. Even in this case, since the substrate portion is thin, absorption of infrared light can be suppressed as much as possible.
“Transmitting infrared light” means that the transmittance at the wavelength of infrared light is, for example, 50% or more. Specific examples of the infrared light transmitting member include polymer materials such as diamond-like carbon, silicon, silicon-based ceramics, and white polyethylene.

In addition, an infrared light emitting device according to the present invention is formed on a side surface of a photoconductive film that is irradiated with pulsed excitation light to generate a photocarrier, and a gap between the tips of the photoconductive film. A pair of antenna electrode films that radiate infrared light and a pulse excitation light transmitting member that is formed on the other side surface of the photoconductive film and that corresponds to at least the gap and transmits the pulse excitation light. And.

Since the pulse excitation light transmitting member that transmits the pulse excitation light is used, the pulse excitation light can be irradiated from the other side surface of the photoconductive film without loss. In addition, the infrared light emitted by the antenna electrode film is emitted to one side of the photoconductive film, so if a substrate that causes absorption by phonons is arranged on the other side, it passes through this substrate. Without radiating without loss.
Further, the pulse excitation light transmitting member only needs to be formed in a region corresponding to a gap formed between at least a pair of antenna electrode films, and not only when disposed only in a region corresponding to this gap, You may arrange | position to the whole containing the area | region corresponding to a clearance gap. For example, the substrate provided on the other side surface of the photoconductive film may be diamond-like carbon that transmits pulse excitation light.
Further, the pulse excitation light transmitting member may be provided in direct contact with the other side surface of the photoconductive film, or may be indirectly installed through a substrate portion that is thinner than the surrounding substrate thickness. Also good. Even if it does in this way, since the board | substrate part is thin, absorption of pulsed excitation light can be suppressed as much as possible.
Note that “transmitting pulsed excitation light” means that the transmittance at the wavelength of pulsed excitation light is, for example, 50% or more. Specific examples of the pulse excitation light transmitting member include glass materials such as quartz in addition to diamond-like carbon.

  In addition, the infrared light emitting device of the present invention is formed on a side surface of a photoconductive film that is irradiated with pulsed excitation light to generate a photocarrier, and disposed between the tips of the photoconductive film via a gap. And a pair of antenna electrode films that radiate infrared light, wherein a gap is formed in a region corresponding to the gap on the other side surface of the photoconductive film.

Since the gap is formed on the other side surface of the photoconductive film, the pulse excitation light can be guided to the photoconductive film without loss if the pulse excitation light is irradiated so as to pass through the gap.
Specifically, it is preferable to use a substrate in which a substrate is provided on the other side surface of the photoconductive film and a gap is formed only in a region corresponding to the gap between the pair of antenna electrode films.

  In addition, the infrared light detection apparatus of the present invention is formed on a side surface of a photoconductive film that is irradiated with pulsed excitation light to generate a photocarrier, and disposed between the tips of the photoconductive film via a gap. A pair of antenna electrode films for detecting infrared light, and an infrared light transmitting member formed on the other side surface of the photoconductive film and at least in a region corresponding to the gap, and transmitting the infrared light. It is characterized by providing.

Since the infrared light transmitting member that transmits infrared light is used, the infrared light can be guided from the other side surface and the infrared light can be detected without loss.
In addition, the infrared light transmitting member only needs to be formed in a region corresponding to the gap formed between the pair of antenna electrode films, and not only when the infrared light transmitting member is disposed only in the region corresponding to the gap. It may be arranged on the whole including the region corresponding to.
Specific examples of the infrared light transmitting member include polymer materials such as diamond-like carbon, silicon, silicon-based ceramics, and white polyethylene.

  In addition, the infrared light detection apparatus of the present invention is formed on a side surface of a photoconductive film that is irradiated with pulsed excitation light to generate a photocarrier, and disposed between the tips of the photoconductive film via a gap. A pair of antenna electrode films for detecting infrared light, a pulse excitation light transmitting member formed on the other side surface of the photoconductive film and at least in a region corresponding to the gap, and transmitting the pulse excitation light It is characterized by providing.

Since a pulse excitation light transmitting member that transmits pulse excitation light is used, loss due to absorption of phonons in the substrate material by guiding the pulse excitation light from the other side and making infrared light incident from one side. Infrared light can be detected.
Further, the pulse excitation light transmitting member only needs to be formed in a region corresponding to the gap formed between the pair of antenna electrode films, and not only when the pulse excitation light transmitting member is disposed only in the region corresponding to this gap. It may be arranged on the whole including the region corresponding to.
Specific examples of the pulse excitation light transmitting member include glass materials such as diamond-like carbon and quartz.

  In addition, the infrared light detection apparatus of the present invention is formed on a side surface of a photoconductive film that is irradiated with pulsed excitation light to generate a photocarrier, and disposed between the tips of the photoconductive film via a gap. And a pair of antenna electrode films for detecting infrared light, wherein a gap is formed in a region corresponding to the gap on the other side surface of the photoconductive film.

Since voids are formed on the other side surface of the photoconductive film, infrared light can be detected without loss if infrared light is guided so as to pass through the voids.
Specifically, it is preferable to use a substrate in which a substrate is provided on the other side surface of the photoconductive film and a gap is formed only in a region corresponding to the gap between the pair of antenna electrode films.

  In addition, a time-series conversion pulse spectroscopic measurement device according to the present invention includes a light source that oscillates pulsed excitation light, and the infrared light emission device and / or the infrared light detection device. To do.

  Providing a time-series conversion pulse spectroscopic measurement device capable of broadband measurement because it is equipped with an infrared light emission device that suppresses excitation light absorption and / or an infrared light detection device that suppresses absorption of radiation light can do.

  According to the present invention, the excitation light transmitting member or the infrared light transmitting member is disposed in the portion corresponding to the gap between the pair of antenna electrode films, or the gap is formed. It is possible to provide an infrared light radiation device, an infrared light detection device, and a time-series conversion pulse spectroscopic measurement device capable of performing broadband measurement without receiving the light.

Embodiments according to the present invention will be described below with reference to the drawings.
[First Embodiment]
Hereinafter, a first embodiment of the present invention will be described with reference to FIGS.
FIG. 1 shows a main part of a terahertz light emitting device (infrared light emitting device) and a terahertz light detecting device (infrared light detecting device) according to an embodiment of the present invention. The same configuration is used for the terahertz light emitting device and the terahertz light detecting device, and the terahertz light emitting device and the terahertz light detecting device are different in terms of how they are used to emit the terahertz light L3 or the sample-transmitted terahertz light L3 ′.
FIG. 1 corresponds to FIG. 8 described above, and shows a cross section of the antenna periphery of the terahertz light emitting device and the terahertz light detecting device. Note that the terahertz light emitting device and the terahertz light detecting device according to the present embodiment are applied to the time-series conversion pulse spectroscopic measurement device described with reference to FIG.

The terahertz light emitting device and the terahertz light detecting device are deposited on the photoconductive film 22, an SI-GaAs substrate 23, a photoconductive film 22 made of LT-GaAs formed by low temperature growth on the substrate 23, and the photoconductive film 22. And a pair of antenna electrode films 21 made of gold (Au).
The tips of the pair of antenna electrode films 21 are opposed to each other, and a gap 21a is formed between the tips.
A space 25 is formed in a region corresponding to the space 21a on the substrate 23 side (the other side surface) as viewed from the photoconductive film 22. An infrared light transmitting member 24 made of diamond-like carbon (hereinafter referred to as “DLC”) is disposed in the gap 25. Instead of DLC, a material that transmits infrared light, such as a polymer material such as silicon, silicon-based ceramics, or white polyethylene, may be used. The transmittance of the infrared light transmitting member 24 is preferably 50% or more at the infrared light wavelength.
The infrared light transmitting member 24 is provided in a state of being in direct contact with the photoconductive film 22. However, a substrate portion thinner than the thickness of the surrounding substrate 23 is not provided between the infrared light transmitting member 24 and the photoconductive film 22 without the infrared light transmitting member 24 being in direct contact with the photoconductive film 22. Alternatively, the infrared light transmitting member 24 may be provided indirectly. Even with such a configuration, the absorption of the substrate 23 can be suppressed as much as possible.

In FIG. 2, the transmittance (vertical axis) of DLC is shown with respect to the wave number (horizontal axis). As can be seen from the figure, unlike SI-GaAs (see FIG. 9) used for the substrate 23, DLC has no absorption band from 100 to 400 cm ⁻¹ . Therefore, the terahertz light emitted by the antenna electrode film 21 and the terahertz light detected by the antenna electrode film 21 can be radiated and condensed without being affected by the phonons of the substrate 23, and a wide band measurement is possible. Become.

  When used as a terahertz light emitting device, by appropriately adjusting the thickness of the infrared light transmitting member 24, it is possible to relatively enhance specific frequency components by multiply reflecting infrared light. For example, if the optical path difference between the front surface reflection and the back surface reflection is set to 60 μm in the infrared wavelength region, an electromagnetic wave component of about 5 THz can be formed.

Next, a method for manufacturing the terahertz light emitting device and the terahertz light detecting device having the above-described configuration will be described with reference to FIG.
First, a substrate 23 before processing is prepared (a). Next, etching is performed so as to form a gap 25 with the thin portion 23a left (b).
And DLC is laminated | stacked in the space | gap 25 so that it may fill from the thin part 23a side, and the infrared-light transmissive member 24 is formed (c). In this step, the thickness of the infrared light transmitting member 24 is set to a desired value.
Then, after removing the upper surface of the substrate 23 so as to remove the thin portion 23a of the substrate 23 (d), LT-GaAs is grown to form the photoconductive film 22 (e). Here, DLC utilizes the property that it is easy to grow LT-GaAs.
Finally, the antenna electrode film 21 is deposited on the photoconductive film 22 (f).

Next, a case where the excitation light transmitting member 30 is used instead of the infrared light transmitting member 24 will be described. In this case, the basic configuration is the same as that of the terahertz light emitting device and the terahertz light detecting device shown in FIG. 1, and the directions in which the excitation light and the terahertz light are incident or emitted are different. As the excitation light transmitting member, DLC or quartz glass is suitable.
In FIG. 1, the emitted terahertz light L3 or the sample transmission terahertz light L3 ′ (see FIG. 5) is irradiated from the antenna electrode film 21 side, and the excitation pulse laser light L2 or the detection pulse laser light L4 (see FIG. 5). ) Is transmitted to the antenna electrode film 21 through the excitation light transmitting member 30 provided on the substrate 22 side.

According to this embodiment, there exist the following effects.
Since the infrared light transmitting member 24 is provided in a region corresponding to the gap 21a of the antenna electrode film 21, when used as a terahertz light emitting device, the excitation pulse laser beam L2 (see FIG. 5) is used as the antenna electrode. The terahertz radiation L3 (see FIG. 5) can be emitted so as to enter from the film 21 side and pass through the infrared light transmitting member 24. As a result, it is possible to realize input / output without loss and to perform a broadband measurement.
When used as a terahertz light detection device, the sample-transmitting terahertz light L3 ′ (see FIG. 5) is incident so as to pass through the infrared light transmitting member 24, and the detection pulse laser light L4 (see FIG. 5) is used. The light can enter from the antenna electrode film 21 side. As a result, it is possible to realize incident / exit without loss and to perform broadband measurement.

On the other hand, since the excitation light transmitting member 30 is provided in a region corresponding to the gap 21a of the antenna electrode film 21, when used as a terahertz light emitting device, the excitation pulse passes through the excitation light transmitting member 30. Laser light L2 (see FIG. 5) can be incident, and the terahertz radiation light L3 (see FIG. 5) can be emitted from the antenna electrode film 21 side so as not to pass through the substrate. As a result, it is possible to realize input / output without loss and to perform a broadband measurement.
When used as a terahertz light detection device, the detection pulse laser light L4 (see FIG. 5) is incident so as to pass through the excitation light transmitting member 30, and the sample-transmitted terahertz light L3 ′ (see FIG. 5) is an antenna. The light can enter from the electrode film 21 side. As a result, it is possible to realize input / output without loss and to perform a broadband measurement.

In the present embodiment, the infrared light transmitting member 24 or the excitation light transmitting member 30 is disposed only in a region corresponding to the gap 21a of the antenna electrode film 21, but the present invention is not limited to this, and the entire substrate 23 is disposed. As the DLC, excitation light may be incident from the substrate 23 side.
In this embodiment, the infrared light transmitting member 24 or the excitation light transmitting member 30 is thinner than the surrounding substrate 23. However, this thickness is not limited to this embodiment. For example, the thickness may be approximately the same as that of the surrounding substrate 23. Thereby, the optical member arranged on the substrate 23 side and the transmissive members 24 and 30 can be brought into direct contact with each other, and a connection without loss can be realized.

[Second Embodiment]
Next, a second embodiment of the present invention will be described with reference to FIG.
This embodiment is different from the first embodiment in that the gap 25 is simply formed without using the excitation light transmitting member. Others are the same as in the first embodiment.
A gap 25 is formed in a region corresponding to the gap 21 a of the antenna electrode film 21 so as to penetrate the substrate 23. By providing such a gap 25, when used as a terahertz light emitting device, the excitation pulse laser light L2 (see FIG. 5) is incident so as to pass through the gap 25, and the terahertz emitted light L3 (see FIG. 5) is entered. ) Is radiated from the antenna electrode film 21 side so as not to pass through the substrate 23. As a result, it is possible to realize input / output without loss and to perform a broadband measurement.

  When used as a terahertz light detection device, the sample-transmitted terahertz light L3 ′ (see FIG. 5) is incident so as to pass through the gap 25, and the detection pulse laser light L4 (see FIG. 5) is used as the antenna electrode film 21. Incident from the side. As a result, it is possible to realize input / output without loss and to perform a broadband measurement.

  In each of the above embodiments, the terahertz light emitting device and the terahertz light detecting device applied to the time-series conversion pulse spectroscopic measurement device have been described. However, the infrared light emitting device and the infrared light detecting device of the present invention are not limited thereto. It is not limited and can be used for other purposes.

It is sectional drawing which shows 1st Embodiment of this invention. It is a figure which shows the transmittance | permeability of diamond-like carbon. It is a figure which shows the manufacturing process of the terahertz light emission apparatus of 1st Embodiment. It is sectional drawing which shows 2nd Embodiment of this invention. It is the figure which showed the outline of the time series conversion pulse spectroscopy measuring device. It is the perspective view which showed the pulse light emission means. It is the top view which showed the structure of the antenna electrode film. It is sectional drawing of an antenna part. It is the figure which showed the transmittance | permeability of GaAs.

Explanation of symbols

21 Antenna electrode film 21a Gap 22 Photoconductive film 23 Substrate 24 Infrared light transmitting member 25 Gap 30 Excitation light transmitting member

Claims (7)

A photoconductive film that is irradiated with pulsed excitation light to generate photocarriers;
A pair of antenna electrode films for emitting infrared light, formed on one side of the photoconductive film, and disposed between the tips of the photoconductive films;
An infrared light transmitting member that is formed on the other side surface of the photoconductive film and at least in a region corresponding to the gap, and transmits the infrared light;
An infrared light emitting device comprising: A photoconductive film that is irradiated with pulsed excitation light to generate photocarriers;
A pair of antenna electrode films for emitting infrared light, formed on one side of the photoconductive film, and disposed between the tips of the photoconductive films;
A pulse excitation light transmitting member formed on the other side surface of the photoconductive film and at least in a region corresponding to the gap, and transmitting the pulse excitation light;
An infrared light emitting device comprising: A photoconductive film that is irradiated with pulsed excitation light to generate photocarriers;
A pair of antenna electrode films that are formed on one side surface of the photoconductive film and that are disposed with a gap between the tips thereof to emit infrared light;
An infrared light emitting device, wherein a gap is formed in a region corresponding to the gap on the other side surface of the photoconductive film. A photoconductive film that is irradiated with pulsed excitation light to generate photocarriers;
A pair of antenna electrode films for detecting infrared light, which are formed on one side surface of the photoconductive film and disposed between the tips of the photoconductive films;
An infrared light transmitting member that is formed on the other side surface of the photoconductive film and at least in a region corresponding to the gap, and transmits the infrared light;
An infrared light detection device comprising: A photoconductive film that is irradiated with pulsed excitation light to generate photocarriers;
A pair of antenna electrode films for detecting infrared light, which are formed on one side surface of the photoconductive film and disposed between the tips of the photoconductive films;
A pulse excitation light transmitting member formed on the other side surface of the photoconductive film and at least in a region corresponding to the gap, and transmitting the pulse excitation light;
An infrared light detection device comprising: A photoconductive film that is irradiated with pulsed excitation light to generate photocarriers;
A pair of antenna electrode films that are formed on one side surface of the photoconductive film and disposed between the tips thereof with a gap between them to detect infrared light;
An infrared light detecting device, wherein a gap is formed in a region corresponding to the gap on the other side surface of the photoconductive film. A light source that oscillates pulsed excitation light;
The infrared light emitting device according to any one of claims 1 to 3 and / or the infrared light detecting device according to any one of claims 4 to 6,
A time-series conversion pulse spectroscopic measurement device comprising:

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