JP2006073321A - Manufacturing method of ito film and ito transparent electrode film formation method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a porous ITO film having a small refraction index and excellent light transmittance and allowing improvement of emission luminance to be expected; and to provide a low-resistance porous ITO electrode film formation method. <P>SOLUTION: An organic solution containing indium, tin and alcohol is used and is heat-treated in the presence of a surface-active agent. For the surface-active agent, a nonionic surface-active agent such as nonyl phenol ethoxylate or octyl phenol ethoxylate of 5-20 wt.% with respect to the organic solution is used. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for producing an ITO film and a method for forming an ITO transparent electrode film, and more particularly to a porous ITO film having a high light transmittance and a low resistivity and a method for forming a porous ITO transparent electrode film.

  A transparent electrode film used in a flat panel display (FPD) is mainly formed by a vapor phase method such as sputtering or vapor deposition. As long as it is a display, light of RGB three primary colors is transmitted, so that the transparent conductive film is required to have a sufficient transmittance in the visible light region. Therefore, a conductive film having a metallic luster cannot be used. Thus, an oxide transparent conductive film such as an ITO film that can be a conductive film having low resistance and excellent permeability has been proposed.

In order to reduce the resistance of this ITO film, thinning and material search are widely performed. For example, dip coating is performed using a coating solution obtained by adding a surfactant to a coating solution in which indium chloride and stannous chloride or stannic chloride are dissolved in either an alcohol or a water-alcohol mixed solution. It is known that an ITO transparent conductive film is formed by baking after applying to a substrate by a method (for example, see Patent Document 1). In Patent Document 1, an inorganic metal salt is used as a raw material, and a nonionic surfactant is added as a surfactant in a specific amount of 0.1 to 10 g / L (0.01 to 1% by weight). A good transparent conductive film with low resistance is produced without forming a porous film that causes the film obtained from this raw material to become cloudy.
JP 2002-175733 A (claims, paragraph numbers: 0011 and 0024)

  A transparent conductive film such as an ITO film formed by a conventional sputtering method or vapor deposition method has a low transmittance in the visible light region, and thus there is a problem that luminance is reduced due to light absorption. In addition, since the refractive index is high, there is a problem that the brightness is lowered.

  In addition, the technique described in Patent Document 1 has a problem that a thick film cannot be formed unless the application to the substrate is repeated several times, and the luminous efficiency is lowered because the refractive index is high.

  An object of the present invention is to solve the above-mentioned disadvantages of the prior art, and to produce a porous ITO film having a low refractive index, a transparent conductive film, further excellent in transmittance, and having an appropriate surface resistivity. It is an object of the present invention to provide a method and a low resistance porous ITO transparent electrode film forming method.

  In the method for producing an ITO film of the present invention, a mixture of an organic solution containing indium, tin and alcohol and a surfactant is applied onto a substrate, and the substrate is subjected to a heat treatment such as a drying / baking treatment to obtain an alcohol. The surfactant is evaporated to form a porous film. If this heat treatment is performed at a temperature equal to or higher than the boiling point of the surfactant, pores can be formed.

  This surfactant is a nonionic surfactant. For example, nonylphenol ethoxylate, octylphenol ethoxylate, phenol ethoxylate, alcohol ethoxylate, polyoxyethylene glycol oleate sorbitan fatty acid ester, polyoxyethylene / polyoxypropylene glycol, polyoxyethylene glycol oleate sorbitan fatty acid ester, polyoxyalkylene Preference is given to at least one nonionic surfactant selected from taloate, glyceride ethoxylate, coconut fatty acid diethanolamide, coconut fatty acid monoethanolamide ethoxylate, polyglycerin fatty acid ester and the like.

  In the method for producing the porous ITO film of the present invention, a surfactant is added to the organic solution in an amount of up to 20% by weight, preferably in the range of 5 to 20% by weight. If the surfactant exceeds 20% by weight, the surfactant does not dissolve in the organic solution, and if it is less than 5% by weight, the porosity of the porous film is insufficient and the refractive index of the obtained film is large. There is a problem.

  After the heat treatment, the obtained ITO film is further annealed in a vacuum, an inert atmosphere, or a reducing atmosphere. Thereby, the resistivity of the obtained porous membrane can be further lowered.

  The ITO film has a porosity of 10.2 to 27.8%, and has a refractive index of 1.74 or less and a resistivity of 1 Ω · cm or less. . This porosity was calculated from the refractive index. If it is less than 10.2%, the resulting film has a large refractive index, and if it exceeds 27.8%, the resistivity becomes large.

  Further, the ITO transparent electrode film forming method of the present invention is a transparent electrode film forming method for producing an ITO transparent electrode film on a substrate, wherein a mixture of an organic solution containing indium, tin and alcohol and a surfactant is used as the substrate. A process for obtaining a treated substrate by applying on the substrate, a process for heating the treated substrate to evaporate alcohol and surfactant, and forming a porous film on the substrate, and a treated substrate after the heat treatment, And a step of forming a porous transparent electrode film by annealing in a vacuum, an inert atmosphere, or a reducing atmosphere.

  The surfactant used in this electrode film forming method is the same as the nonionic surfactant, and the amount used is also as described above.

  The porosity of the porous film obtained by the electrode forming method is 10.2 to 27.8%. This porosity was calculated in the same manner as described above. Moreover, the refractive index of this porous film is 1.74 or less, and the resistivity is 1 Ω · cm or less, which are in a sufficiently practical range.

Furthermore, according to the method for producing a conductive film of the present invention, a surfactant is added to an organic solution containing a tin compound, an indium compound, a zinc compound, a cadmium compound, or two or more of these compounds and an alcohol. The mixed solution obtained above was applied onto a substrate, and this substrate was subjected to heat treatment, whereby tin oxide (SnO ₂ ), indium oxide (In ₂ O ₃ ), zinc oxide (ZnO), and cadmium oxide (CdO), respectively. Alternatively, a porous film made of a transparent conductive material that is an oxide containing two or more of these oxides can be formed. The oxide containing two or more of these oxides is an oxide such as cadmium oxide-tin oxide (Cd ₂ SnO ₄ : CTO), cadmium oxide-zinc oxide (CZT), indium oxide-zinc oxide (IZO), or the like. It is.

  According to the present invention, the obtained porous ITO film has a small refractive index and is excellent in light transmittance, and is expected to improve the light emission luminance, and the obtained porous ITO transparent electrode film has a low resistance. The effect that it is.

  According to the present invention, as described above, a mixture obtained by adding at least one nonionic surfactant to an organic solution for producing an ITO film containing indium, tin, and alcohol is obtained as a glass substrate or ceramic. When spin coating is performed on a substrate such as a substrate, and heat treatment (drying / firing) is performed at a predetermined temperature to evaporate alcohol and surfactant, and when the reaction system contains other organic substances. First, a porous ITO film is produced while removing the material. As the surfactant evaporates, a number of pores are created in the membrane, thus forming a porous membrane.

  Indium is blended in the form of a compound such as indium octylate, indium nitrate, indium oxalate, or indium sulfate, or in the form of an alkoxide such as indium ethoxide or indium methoxide. Tin is blended in the form of a compound such as tin octylate, tin nitrate, tin oxalate, or tin sulfate, or in the form of an alkoxide such as tin ethoxide or tin methoxide. The alcohol is not particularly limited as long as it is an alcohol solvent such as methyl alcohol, ethyl alcohol, butyl alcohol, isobutyl alcohol, propyl alcohol, and isopropyl alcohol.

  These indium and tin compounds are dissolved in an organic solvent together with alcohol to prepare an organic solution for producing an ITO film. As this organic solvent, for example, xylene, butyl acetate, acetone, benzene, hexane, toluene, cyclohexane and the like can be used.

  The compounding amounts of the indium compound (indium) and the tin compound (tin) are 1 to 15% by weight (indium: 2.5 to 4% by weight) and 0.05 to 2%, respectively, based on the organic solution for producing the ITO film. % By weight (tin: 0.01 to 0.5% by weight). Alcohol is added to adjust the concentration of the whole reaction solution, and is added by appropriately adjusting the amount so that it can be easily applied according to the viscosity of the reaction solution.

  As an organic solution for producing an ITO film used in the present invention, for example, indium octylate as an indium raw material, tin octylate as a tin raw material, xylene and butyl acetate as a solvent, and ethyl alcohol as an alcohol, octyl on a weight basis is used. Examples thereof include those having a composition comprising 1 to 15% indium oxide, 0.05 to 2% tin octylate, 60 to 80% xylene, 5 to 15% butyl acetate, and 5 to 15% ethyl alcohol.

  As the surfactant, one that can be dissolved in an organic solution for producing an ITO film, such as the nonionic surfactant described above, is used. When a cationic surfactant is used, there is a problem that this solution is solidified and cannot be spin-coated.

  By appropriately selecting the amount of the surfactant used and the heat treatment conditions, it is possible to selectively produce a porous ITO film having a desired porosity.

  According to the present invention, a mixed solution obtained by adding a predetermined amount of a nonionic surfactant to the organic solution for producing an ITO film obtained as described above is applied onto a substrate by a coating method such as a normal spin coating method. Then, it is dried and baked in the air using a known infrared heating furnace or the like to evaporate an alcohol solvent, a surfactant or other organic substances, thereby producing a porous ITO film. The heat treatment conditions in this case are not particularly limited as long as the alcohol-based solvent, the surfactant and the like are evaporated and then baked to obtain a porous film. For example, the temperature may be higher than the temperature at which nonionic surfactants and other organic substances can be evaporated in the atmosphere. In this case, for example, drying is performed at 150 to 180 ° C., and firing is performed at 400 to 500 ° C. The time required for this drying / firing is not particularly limited, there is no film roughness of the obtained porous film, the structure is not destroyed, and the surfactant and other components can be sufficiently evaporated, It may be within a range where a porous film can be obtained.

After drying and baking as described above, the resistivity of the obtained ITO film can be further lowered by annealing under predetermined conditions. This annealing process is performed in a vacuum, in an inert atmosphere, or in a reducing atmosphere. The annealing temperature is preferably 500 ° C. or higher, for example. If the temperature is less than 500 ° C., it is difficult to obtain a low-resistance porous film. The upper limit temperature of the annealing treatment is the heat resistant temperature of the substrate, for example, 600 ° C. For example, annealing is performed at 10 ⁵ to 10 ⁻¹ Pa in a vacuum, and in an inert atmosphere, it is performed in a rare gas such as helium or argon, or an inert gas such as nitrogen gas. In a neutral atmosphere, it may be performed in a reducing gas such as hydrogen.

  When the refractive index, resistivity, and absorptance of the ITO film obtained as described above are measured, it can be seen that a porous film suitable for the purpose of the present invention is obtained. According to the method of the present invention, a porous film having a refractive index of 1.74 or less and a resistivity of 1 Ω · cm or less can be obtained.

  The porosity of the ITO film obtained by the method of the present invention can be calculated as follows.

  In general, it is known that the porosity is expressed by the following equation when the dielectric constant of glass is 4 and the dielectric constant of air is 1 as an equation for obtaining the porosity from the dielectric constant.

（式中ｐは空孔率を示し、ｋは誘電率を示す。)
この式(１)をもとにＩＴＯの屈折率を１．９とし、空気の屈折率を１とすると、

(In the formula, p represents the porosity, and k represents the dielectric constant.)
Based on this formula (1), if the refractive index of ITO is 1.9 and the refractive index of air is 1,

（式中、ｐは上記の通りであり、ｎは屈折率を示す。）
という式がなりたつ。
この式(２)から空孔率ｐを算出することができる。本発明の場合は、屈折率１．５２〜１．７４程度の多孔質膜が得られているので、空孔率ｐ＝１０．２〜２７．８％となる。

(In the formula, p is as described above, and n represents a refractive index.)
This is the formula.
The porosity p can be calculated from this equation (2). In the case of the present invention, since a porous film having a refractive index of about 1.52 to 1.74 is obtained, the porosity p is 10.2 to 27.8%.

  Embodiments of the present invention will be described below with reference to the drawings.

  In order to produce a porous ITO film, a predetermined amount of a surfactant was added to an organic solution containing indium, tin, and ethyl alcohol to prepare a mixed solution for producing a porous ITO film.

  In this example, Adeka ITO-L (trade name, manufactured by Asahi Denka Kogyo Co., Ltd.) is used as the organic solution, and polyoxyethylene / polyoxypropylene glycol is used as the nonionic surfactant for this organic solution, 5, 10 15 and 20% by weight were added to prepare each coating solution.

Subsequently, each coating liquid was spin-coated on the glass substrate on the conditions of 500 rotation / min. Each coated substrate was first subjected to a drying treatment in air at 150 ° C. for 5 minutes in a known infrared heating furnace, and then a baking treatment in air at 500 ° C. for 60 minutes. Thereafter, as shown in Table 1, annealing treatment was performed at 200 ° C. or 500 ° C. for 60 minutes in a nitrogen atmosphere in vacuum (10 ⁻¹ Pa) to obtain a porous ITO film. Since the substrate holding time during the baking process may be in a range in which the film structure is not destroyed, it is set to 60 minutes in this embodiment.

  The refractive index and resistivity of the porous ITO film obtained as described above were measured. Table 1 shows the obtained results and the results of measurement on the ITO film prepared without adding the surfactant.

  As is apparent from Table 1, in the case of a porous ITO film obtained by adding a predetermined amount of a surfactant according to the present invention, the refractive index is smaller than that of an ITO film obtained without adding a surfactant. And the resistivity was low and within a practical range. Further, when a predetermined amount of the surfactant was added, the refractive index was small compared to the ITO film obtained by performing the annealing step without adding the surfactant without performing the annealing step. In addition, by performing the annealing process, the resistivity of the obtained porous ITO film was lowered, and a lower resistivity was obtained when the annealing process was performed in a vacuum than in a nitrogen atmosphere. From Table 1, it can be said that according to the method of the present invention, a porous ITO film having a low refractive index in the range of about 1.52 to 1.74 is obtained.

Next, (1) an absorption spectrum in the region of 300 to 800 nm for an ITO film produced without using a surfactant and without performing an annealing step after the drying / baking step, (2) a surfactant (polyoxyethylene poly 10% by weight of oxypropylene glycol), absorption spectrum in a 300-800 nm region for a porous ITO film prepared without performing an annealing process after the drying / firing process, (3) drying / firing process without using a surfactant The absorption spectrum in the 300-800 nm region for the ITO film produced by performing an annealing step (500 ° C. for 60 minutes in vacuum (10 ⁻¹ Pa)), and (4) surfactant (polyoxyethylene / polyoxypropylene glycol) 10% by weight, and after the drying / firing process, an annealing process (500 in vacuum (10 ⁻¹ Pa)) The absorption spectrum in a 300-800 nm area | region was measured with respect to the porous ITO film | membrane produced by performing 60 degreeC. The obtained absorption spectra (1) to (4) are shown in FIGS. 1 (a) and (b) and FIGS. 2 (a) and (b), respectively.

  From the absorption spectra of FIGS. 1 and 2, the porous ITO film (FIGS. 1B and 2B) is less porous in the visible light region of 380 to 780 nm (FIGS. 1A and 1B). It can be seen that the absorption rate is smaller than that in FIG. That is, it means that the porous ITO film is more permeable than the non-porous ITO film.

Further, as the surfactant, in place of the above polyoxyethylene / polyoxypropylene glycol, nonylphenol ethoxylate, octylphenol ethoxylate, phenol ethoxylate, alcohol ethoxylate, polyoxyethylene glycol oleate sorbitan fatty acid ester, polyoxyethylene glycol oleate sorbitan Same as above when using nonionic surfactant selected from fatty acid ester, polyoxyalkylene tallowate, glyceride ethoxylate, coconut fatty acid diethanolamide, coconut fatty acid monoethanolamide ethoxylate, polyglycerin fatty acid ester, etc. A similar result can be obtained even if two or more of the above surfactants are used in combination.
(Comparative Example 1)

  When the same organic solution for a porous conductive SOG film as in Example 1 was used and cetyltrimethylammonium hydroxide was added as a cationic surfactant thereto, the organic solution was solidified and could not be spin coated.

  According to the present invention, the obtained porous film has a low refractive index, and therefore has excellent light transmittance and is expected to improve the light emission luminance. For example, in the field of a flat panel display as a transparent conductive film. Available.

It is an absorption spectrum in the region of 300 to 800 nm with respect to the ITO film, (a) is an absorption spectrum for an ITO film prepared without using a surfactant and without performing an annealing process after the drying / baking process, and (b) is an interface spectrum. The absorption spectrum with respect to the porous ITO film | membrane produced without using an annealing process after a drying / baking process using 10 weight% of activators. It is an absorption spectrum in the region of 300 to 800 nm with respect to the ITO film. (A) is an absorption spectrum for an ITO film prepared by performing an annealing process after the drying / firing process without using a surfactant, and (b) is a surfactant. Absorption spectrum for a porous ITO film prepared by using 10% by weight and performing an annealing process after the drying / firing process.

Claims (14)

A method for producing an ITO film, wherein a porous film is formed by applying a mixture of an organic solution containing indium, tin and alcohol and a surfactant onto a substrate, and heating the substrate. The method for producing an ITO film according to claim 1, wherein the surfactant is a nonionic surfactant. The nonionic surfactant is nonylphenol ethoxylate, octylphenol ethoxylate, phenol ethoxylate, alcohol ethoxylate, polyoxyethylene glycol oleate sorbitan fatty acid ester, polyoxyethylene / polyoxypropylene glycol, polyoxyethylene glycol oleate sorbitan fatty acid The surfactant is at least one selected from ester, polyoxyalkylene tallowate, glyceride ethoxylate, coconut fatty acid diethanolamide, coconut fatty acid monoethanolamide ethoxylate, and polyglycerol fatty acid ester. 2. A method for producing an ITO film according to 2. The method for producing an ITO film according to claim 1, wherein 5 to 20% by weight of a surfactant is added to the organic solution. The method for producing an ITO film according to any one of claims 1 to 4, wherein after the heat treatment, the obtained porous film is annealed in a vacuum, in an inert atmosphere, or in a reducing atmosphere. . The heat treatment is performed at a temperature equal to or higher than the boiling point of the surfactant, and the coating film on the substrate is dried and baked to form a porous film on the substrate. A method for producing the described ITO film. The method for producing an ITO film according to claim 1, wherein the ITO film has a porosity of 10.2 to 27.8%. The method for producing an ITO film according to claim 1, wherein the ITO film has a refractive index of 1.74 or less and a resistivity of 1 Ω · cm or less. A transparent electrode film forming method for producing an ITO transparent electrode film on a substrate, a step of applying a mixture of an organic solution containing indium, tin and alcohol and a surfactant on the substrate to obtain a treated substrate; and The process substrate is heat-treated to evaporate alcohol and surfactant to form a porous film on the substrate, and the heat-treated substrate is subjected to a vacuum, an inert atmosphere, or a reducing atmosphere. And a step of forming a porous transparent electrode film by annealing with a method for forming an ITO transparent electrode film. The surfactant is nonylphenol ethoxylate, octylphenol ethoxylate, phenol ethoxylate, alcohol ethoxylate, polyoxyethylene glycol oleate sorbitan fatty acid ester, polyoxyethylene / polyoxypropylene glycol, polyoxyethylene glycol oleate sorbitan fatty acid ester And at least one nonionic surfactant selected from polyoxyalkylene tallowate, glyceride ethoxylate, coconut fatty acid diethanolamide, coconut fatty acid monoethanolamide ethoxylate, and polyglycerol fatty acid ester. The method for forming an ITO transparent electrode film according to 9. The method for forming an ITO transparent electrode film according to claim 9 or 10, wherein a surfactant is added in an amount of 5 to 20% by weight based on the organic solution. The ITO transparent electrode film forming method according to any one of claims 9 to 11, wherein the ITO transparent electrode film has a porosity of 10.2 to 27.8%. The method for forming an ITO transparent electrode film according to claim 9, wherein the ITO transparent electrode film has a refractive index of 1.74 or less and a resistivity of 1 Ω · cm or less. A mixed solution obtained by adding a surfactant to an organic solution containing a tin compound, an indium compound, a zinc compound, a cadmium compound, or two or more of these compounds and an alcohol is applied onto the substrate. Conductivity characterized by forming a porous film made of a transparent conductive material that is a heat treatment to be tin oxide, indium oxide, zinc oxide, cadmium oxide, or an oxide containing two or more of these oxides A method for producing a film.

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