JP2006072445A - Ic card - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an IC card equipped with electromagnetic stripes which realizes improvement in reading by an external device and secures higher security, and on which various kinds of parts such as a CPU are compactly and easily mounted. <P>SOLUTION: An IC card K1 has an electromagnetic stripe 1. In addition, the electromagnetic stripe 1 is provided with a plurality of magnetic field generators 10 which are provided in line in the extending direction of the electromagnetic stripe 1 and switching elements which are each provided corresponding to each of the plurality of magnetic field generators 10. The magnetic field generators 10 generate a magnetic field in the direction of the normal to the surface of the electromagnetic stripe 1. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an IC card.

Conventionally, as an IC card, there is known an IC card that magnetically reads and writes information via an electronic magnetic stripe (see, for example, Patent Document 1).
As shown in FIG. 13, such an IC card 200 includes a pseudo magnetic stripe region 201 made of conductive lines, a control LSI 202 for driving the magnetic stripe 201, a CPU 203 for driving the control LSI 202, a battery 204, and the like. , Is composed of.
JP-A-63-120692

However, the present inventors have a problem that in the IC card of the above-mentioned patent document, it is difficult to generate a magnetic field in the normal direction on the surface of the IC card, and there is a problem that reading accuracy by the reader of the external device is low. I found it. Further, the present inventors have a high-definition and high-density pitch of conductive wires constituting the IC card and a terminal pitch in the control LSI, and a relatively large size of the control LSI. We found the problem that its implementation was difficult. Furthermore, the present inventors have found that an IC card having flexibility cannot be realized.
Further, the present inventors have found that the IC card is provided with a control LSI and a conductive wire, so that a lot of space on the IC card is occupied and there is no space for incorporating other devices. It was.

  The present invention has been made in view of the above-described circumstances, and in an IC card provided with an electronic magnetic stripe, an improvement in reading accuracy by an external device is realized, and various components such as a CPU can be mounted compactly and easily It is another object of the present invention to propose an IC card that can obtain higher security.

In the above-mentioned patent document, the present inventors have arranged the conductive lines that give a spatial magnetic field distribution in parallel in only one direction, so that the electric lines of force are formed around the conductive lines in the sectional view of the conductive lines. Therefore, it has become difficult to generate a magnetic field in the normal direction on the surface of the IC card, and thus attention has been paid to the problem that the reading accuracy of the reader of the external device is low.
Here, for example, 1424 such conductive wires are required in the IC card, and when the conductive wires are formed on a card having a width of 86.5 mm, the interval between the conductive wires is 0.06 mm. Further, since there are 1424 connection points between the conductive lines and the control LSI for driving each of the conductive lines, the terminal pitch is 0.06 mm at the maximum. Since the conductive wire pitch and terminal pitch are high-definition and high-density as described above, the present inventors require narrower and higher-precision technology than a general LSI terminal pitch, which makes mounting difficult. Focused on the problem of being.

  In addition, since the control LSI needs 1,424 connection terminals to the conductive wires, even if the terminal pitch is 0.06 mm, the width of the control LSI reaches several centimeters. Such a control LSI having a relatively large size is fabricated on a single crystal silicon substrate and then mounted on an IC card. Here, the present inventors have focused on the problem that since the size of the control LSI is relatively large, cracks are likely to occur in the mounting process and mounting is difficult. In addition, the present inventors have paid attention to the problem that a control IC that is easily cracked cannot be mounted on a flexible substrate, and therefore a flexible IC card cannot be realized.

In addition, the present inventors have a conventional IC card with an electronic magnetic stripe that has only a function of controlling the generation of a magnetic field itself, and has a relatively large control LSI or conductive line as described above. Since the IC card is provided, a lot of space on the IC card is occupied, and attention is paid to the problem that there is no space for mounting other devices on the IC card. For this reason, it has become difficult to add a function for identifying the user of the IC card, and it has been noted that the user cannot be specified, and there is a problem in ensuring security.
Therefore, the present inventors have conceived the present invention having the following means in order to solve such technical problems.

  That is, the IC card of the present invention is an IC card having an electronic magnetic stripe portion, and the electronic magnetic stripe portion includes a plurality of magnetic field generating portions provided side by side in the extending direction of the electronic magnetic stripe portion, A switching element portion provided corresponding to each of the plurality of magnetic field generation portions, wherein the magnetic field generation portion generates a magnetic field in a normal direction of a surface of the electron magnetic stripe portion. Yes.

According to the present invention, since the magnetic field generation unit generates a magnetic field in the normal direction of the surface of the electron magnetic stripe unit, it is possible to improve the reading accuracy by the reader of the external device.
On the other hand, in the prior art, since the conductive lines are arranged in parallel only in one direction, electric lines of force are formed around the conductive lines in a sectional view of the conductive lines, and the magnetic field in the normal direction on the surface of the IC card. It was difficult to generate. According to the present invention, since the magnetic field generator generates a magnetic field in the normal direction of the surface of the electron magnetic stripe part, the problems of the prior art can be solved.

Further, according to the present invention, since the electronic magnetic stripe portion includes the switching element portion corresponding to each of the plurality of magnetic field generating portions, the magnetic field generated by the magnetic field generating portion can be generated by the operation of the switching element portion. . Furthermore, since the switching element part is built in the electromagnetic stripe part, there is no need to separately provide a control LSI as in the prior art, and only a driver circuit and a power supply line are provided outside the electromagnetic stripe part. Good. Therefore, unlike the prior art, it is not necessary to form more than 1400 conductive lines on the IC card, and the number of wirings can be reduced as compared with the prior art.
Furthermore, the control LSI in the prior art has a problem that it is difficult to mount on a flexible substrate because it is a relatively large size and a hard component, but the present invention solves such a technical problem, Mounting on a flexible substrate can be facilitated.

Further, in the IC card of the present invention, the electro-magnetic stripe portion has a plurality of track portions extending in the same direction as the electro-magnetic stripe portion, and each of the track portions includes the magnetic field generating portion and the electro-magnetic stripe portion. A switching element portion is provided.
Thus, since each of the plurality of track portions is provided with a magnetic field generating portion and a switching element portion, a plurality of magnetic field generating portions are more compared to an electron magnetic stripe portion having only one track. Can be provided. Thereby, more information can be read and written.

The IC card of the present invention is characterized in that each of the magnetic field generators independently generates a magnetic field.
Thus, since each of the magnetic field generation units is provided independently, the magnetic field generation unit can independently generate a magnetic field by operating the switching element unit.
Therefore, a magnetic field can be generated only in a necessary magnetic field generation unit among the plurality of magnetic field generation units. In addition, when each of the magnetic field generators is not provided independently, there is an effect of canceling out the magnetic field between the adjacent magnetic field generators, but each of the magnetic field generators is independent as in the present invention. Therefore, the magnetic field can be generated without causing such a problem.

In the IC card of the present invention, the magnetic field generation unit includes a first coil and a second coil, and the switching element unit includes a first transistor corresponding to the first coil, and a second coil. Each of the first transistor and the second transistor is connected to a common gate line, and a potential applied to the gate line causes the first coil and the second coil to be connected to each other. It is characterized by controlling the direction of flowing current.
According to the present invention, the direction of the current flowing through the first coil and the second coil is controlled by the potential applied to the gate lines of the first transistor and the second transistor. The direction of the magnetic field can be determined. Therefore, the direction of the magnetic field can be easily determined.
On the other hand, in the prior art, since the magnetic field strength changes depending on the current value applied to the conductive wire, it is difficult to generate a stable magnetic field. However, the present invention is common to the first and second transistors. The direction of the current flowing in the first coil and the second coil is controlled by the potential applied to the gate line, and the direction of the magnetic field is determined. Therefore, a stable magnetic field can be generated in a desired direction. Thereby, the magnetic field in the normal direction of the surface of the electron magnetic stripe part can be generated more reliably, and the reading accuracy by the reader of the external device can be further improved.

  In the IC card of the present invention, the electro-magnetic stripe unit includes a driver circuit unit connected to the switching element unit, and the driver circuit unit applies a data signal to each of the switching element units. A shift register unit; a latch unit that holds a data signal applied to the switching element unit; and a clock signal generation unit that applies a clock signal for operating the shift register unit and the latch unit. It is said.

According to the present invention, not only the magnetic field generating unit and the switching element unit, but also the driver circuit unit can be incorporated in the electronic magnetic stripe unit.
According to the present invention, the clock signal generated by the clock signal generation unit is input to the shift register unit, so that the data signal is sequentially input to each of the plurality of switching element units. The output of the last stage of the shift register is a latch signal and is input to the latch unit. When the latch signal is input, the latch unit holds the data signal given to the switching element unit. The data signal thus held is applied to the gate electrode of the switching element unit through the gate line, and the switching element unit is driven to generate a magnetic field in the normal direction of the surface of the electron magnetic stripe unit in the magnetic field generation unit. To do.
According to the present invention, when the driver circuit unit operates as described above, each of the plurality of switching element units can be operated to generate a magnetic field in the magnetic field generation unit corresponding to the switching element unit.

In the IC card of the present invention, the switching element portion and the driver circuit portion are formed of thin film transistors and are formed integrally with the electronic magnetic stripe portion.
In this manner, by using the thin film transistor to form the electro-magnetic stripe portion, the switching element portion and the driver circuit portion can be easily formed in the electro-magnetic stripe portion by a peeling transfer technique. Thereby, in an IC card, since a structure strong against bending stress can be easily formed, an IC card excellent in strength can be realized.
Further, by forming them integrally, a post-process such as wiring can be omitted and the number of parts can be reduced, so that the manufacturing cost can be reduced.

In the IC card of the present invention, the magnetic field generation unit includes a plurality of magnetic field generation regions obtained by dividing the magnetic field generation unit.
According to the present invention, since the magnetic field generation unit includes a plurality of magnetic field generation regions, a magnetic field is generated in each of the plurality of magnetic field generation regions with the operation of the switching element. As a result, a magnetic flux is generated substantially at the center in each of the magnetic field generation regions.
On the other hand, when the magnetic field generation unit does not include such a magnetic field generation region, one magnetic flux is generated at substantially the center of the magnetic field generation unit. In this case, the magnetic force per magnetic flux is larger than when there are a plurality of magnetic field generation regions.
In this way, when the case where there are a plurality of magnetic field generation regions is compared with the case where there are no magnetic field generation regions, the total sum of the magnetic forces generated by the magnetic field generation unit is equal to each other. Since it is generated at the generating portion, the magnetic density can be reduced. Therefore, the distribution of magnetic force in the magnetic field generation unit can be made uniform. Thereby, the magnetic field in the normal direction of the surface of the electron magnetic stripe part can be generated more reliably, and the reading accuracy by the reader of the external device can be further improved.

The IC card of the present invention is further characterized by further comprising a capacitive fingerprint sensor.
According to the present invention, by providing the capacitive fingerprint sensor, it is possible to perform personal authentication of the IC card user, so that the user can be limited and the abuse of the IC card can be prevented. can do. Furthermore, the IC card of the present invention can not only perform such personal authentication but also write and read information to and from an external device via the electronic magnetic stripe section. Therefore, not only security by fingerprint authentication can be obtained but also information communication can be performed through the electronic magnetic stripe part, so that an IC card having higher security can be realized.
In addition, as described above, in the present invention, the magnetic field generation unit and the switching element unit are built in the electronic magnetic stripe unit, and the control LSI and the conductive line as in the conventional technology are not provided. Since space is achieved, a device such as a capacitive fingerprint sensor can be easily provided in addition to the IC card.

In the IC card of the present invention, there is further provided a display element for displaying at least one of information obtained through the electronic magnetic stripe portion or authentication information in the capacitive fingerprint sensor. It is characterized by providing.
As described above, when the IC card includes the display element, the result of personal authentication in the capacitive fingerprint sensor and the result and information when information is read and written through the electronic magnetic stripe unit are displayed. be able to. Thereby, the user can confirm various information easily.

The display element is preferably an electrophoretic display device. In the electrophoretic display device, a driving element such as a TFT applies a predetermined voltage for a predetermined time, so that an image can be held without applying a voltage thereafter. That is, it is a display element having image storage and display memory properties.
By providing such an electrophoretic display device, power consumption for displaying an image can be reduced, so that low power consumption can be realized and an IC card having display memory properties can be realized.

The IC card of the present invention is further characterized by further comprising a control unit for controlling the electro-magnetic stripe unit, the capacitive fingerprint sensor, and the display element.
Here, the control unit is preferably composed of an arithmetic circuit, a storage circuit, and the like. Also, an external input unit such as an input means for the IC card user to input information or a selection means for the IC card user to select one of the information displayed on the display element is provided. You may prepare.
In this way, it becomes possible to perform arithmetic processing on the fingerprint information of the user, input information by the user, storage information stored in the storage circuit, and the like by the arithmetic circuit, and the electronic magnetic stripe based on the calculation result. The part can generate a magnetic field. In addition, the calculation result can be displayed on the display element.
Note that a program may be stored in the storage circuit. In this way, the arithmetic circuit can be operated according to the program.
Therefore, by providing the control unit in the IC card, the electronic magnetic stripe unit, the capacitive fingerprint sensor, and the display element can be controlled.

In the IC card of the present invention, the electronic magnetic stripe part, the capacitive fingerprint sensor, the display element, and the control part are formed of a thin film transistor and are integrally formed. .
In this manner, by using the thin film transistor to form the electronic magnetic stripe portion, the capacitive fingerprint sensor, the display element, and the control portion, an IC card can be easily manufactured by a peeling transfer technique. Thereby, since the IC card can easily form a structure resistant to bending stress, an IC card excellent in strength can be realized.
Further, by forming them integrally, a post-process for forming wirings and the like can be omitted, and the number of parts can be reduced, so that manufacturing cost can be reduced. Further, since it is integrally formed, the IC card can be easily broken if it is modified or counterfeited, that is, it is difficult to modify or counterfeit the IC card, and the security can be further improved.

(First embodiment of IC card)
Hereinafter, an embodiment of an IC card according to a first embodiment of the present invention will be described with reference to FIGS.
Here, FIG. 1 is a configuration diagram for explaining the configuration of the IC card according to the present embodiment, FIG. 2 is a configuration diagram for explaining an electronic magnetic stripe portion and a driver circuit portion in the IC card, and FIG. 3 is a driver circuit portion. 4 is a circuit diagram for explaining the electromagnet stripe portion, and FIG. 5 is a timing chart for explaining the operation of the shift register portion.

As shown in FIG. 1, the IC card K <b> 1 in the present embodiment includes an electronic magnetic stripe unit 1, a control unit 2 that drives and controls the electronic magnetic stripe unit 1, and a battery 3.
In addition, as shown in FIG. 2, the electronic magnetic stripe unit 1 includes a magnetic field generation unit 10 and a driver circuit unit 11. The driver circuit unit 11 includes a shift register unit 12, a latch circuit (latch unit) 13, and a buffer unit. Further, the control unit 2 is connected to the shift register unit 12 and supplies a reset signal, a data signal, and a clock signal to the shift register unit 12 as will be described later, and the high potential line VDD and the low potential line VSS are supplied. An electric potential is applied to the magnetic field generator 10 through this.

As shown in FIG. 3, the driver circuit unit 11 includes gate lines M1 to Mn (described later) corresponding to each of n selection transistor units (described later), and the shift register unit 12 includes gate lines. A data signal of H (1) level or L (0) level is output to each of M1 to Mn.
The latch circuit 13 is a circuit that holds each data signal applied to the output units M1 to Mn.
In addition, a clock signal generator 14 is connected to the shift register unit 12. As a result, the shift register unit 12 is operated by applying a clock signal to the shift register unit 12. The latch circuit 13 is connected to the final output Xlatch of the shift register 12. When the H (1) level is output to Xlatch, the latch circuit 13 operates.
The shift register unit 12 is connected to a reset signal generation unit 15 that applies a reset signal so as to reset the operation states of the shift register unit 12 and the latch circuit 13.

  In the present embodiment, the number of stages of the shift register unit 12 is 2n with respect to n magnetic field generation units 10. Further, data that is first written to the shift register unit 12 is output to the latch circuit unit 13. The clock signal generator 14 outputs a normal rotation signal CLK (described later) and an inverted signal CLKB as described later, and the signals are input to the shift register unit 12 and the latch circuit unit 13. .

  As shown in FIG. 4, the electro-magnetic stripe portion 1 extends in the left-right direction on the paper surface, in other words, in the longitudinal direction of the IC card K1 (see FIG. 1). The magnetic field generators 10 are provided side by side. For example, 1424 magnetic field generators 10 are arranged side by side at a pitch of 60 μm. Further, the electron magnetic stripe portion 1 has a selection transistor portion (switching element portion) 16 provided in each of the magnetic field generation portions 10. Therefore, each of the magnetic field generation units 10 can be driven independently in the electron magnetic stripe unit 1.

The magnetic field generation unit 10 includes two coils (first coil and second coil) C1 and C2 formed by metal wiring having high conductivity. The selection transistor unit 16 includes two transistors (first transistor and second transistor) T1 and T2. Each of the n magnetic field generators 10 is connected to the low potential line VSS and the high potential line VDD. Here, in the path of the coil C1, the transistor T1 is disposed, and the coil C1 is formed clockwise (arrow R in the drawing) from the connection terminal of the high potential line VDD toward the connection terminal of the low potential line VSS. Yes. On the other hand, in the path of the coil C2, the transistor T2 is disposed, and the coil C2 is formed counterclockwise (arrow L in the drawing) from the connection terminal of the high potential line VDD toward the connection terminal of the low potential line VSS. .
Further, such coils C1 and C2 are arranged in a polymerized manner via an insulating film in the normal direction of the electron magnetic stripe portion 1. Therefore, the coils C1 and C2 are formed in each layer (layer film).

Each of the transistors T1 and T2 has a common gate line so that the data signal of the shift register 12 is applied simultaneously. Here, the transistor T1 is an n-type transistor, and the transistor T2 is a p-type transistor. As a result, when the data signal is at the H (1) level, the transistor T1 is in an operating state and the transistor T2 is in a non-operating state. On the other hand, when the data signal is at the L (0) level, the transistor T2 is in an operating state and the transistor T1 is in a non-operating state.
Therefore, only one of the transistors T1 and T2 operates depending on whether the potential of the data signal is H level or L level, and accordingly, only one of the coils C1 and C2 is changed from the high potential line VDD to the low potential line. A current flows toward VSS. That is, the direction of current flowing through the coils C1 and C2 is controlled by the potential of the data signal.
Here, when a current flows through the coil C1, a magnetic field is generated from the front side of the paper to the back side of the paper (reference numeral B in the drawing) from the right-handed screw law. On the other hand, when a current flows through the coil C2, a magnetic field is generated from the back side of the paper to the front side of the paper (reference A in the figure). With the above-described configuration, the IC card K1 generates a magnetic field in the normal direction on the surface of the electron magnetic stripe portion 1.

In the thus configured electro-magnetic stripe section 1, the selection transistor section 16 and the driver circuit section 11 are formed using thin film transistors (TFTs).
The electro-magnetic stripe 1 is integrally formed on the IC card K1 by a peeling transfer technique such as SUFTLA (Surface Free Technology by Laser Ablation) (registered trademark). Such a peeling transfer technology has excellent heat resistance and transparency, for example, a low-temperature polysilicon TFT is formed in advance on a glass substrate, and then a predetermined thin film transistor is peeled off by laser irradiation, and the thin film transistor is made into a plastic substrate. It is formed by transferring it to the top.
Therefore, by using such a peeling transfer technique, the selection transistor unit 16 and the driver circuit unit 11 configured using thin film transistors and the magnetic field generation unit 10 can be easily formed on a resin substrate such as a plastic substrate. It becomes possible to form. Therefore, a flexible resin substrate can be used as the substrate of the IC card K1.
In addition, by using such a peeling transfer technique, a thin film transistor that has conventionally been formed only on a hard and heat-resistant substrate such as a glass substrate is inferior in heat resistance to, for example, a glass substrate. It is possible to transfer and form such a flexible substrate. Accordingly, the electro-magnetic stripe unit 1 including the magnetic field generation unit 10, the selection transistor unit 16, and the driver circuit unit 11 can be easily mounted on a plastic base material having flexibility, and the IC card having flexibility. K1 can be realized.

  In the present embodiment, the magnetic field generation unit 10 and the selection transistor unit 16 are provided on the entire surface of the electron magnetic stripe unit 1, but this is not a limitation. A track portion that extends in the same direction as the extending direction of the electromagnet stripe portion 1 may be allocated, and the magnetic field generation portion 10 and the selection transistor portion 16 may be provided on the track portion. Further, the electro-magnetic stripe unit 1 may include a plurality of track units, and the magnetic field generation unit 10 and the selection transistor unit 16 may be provided in each of the plurality of track units.

Next, the operation of the shift register unit 12 will be described with reference to the timing chart of FIG.
First, in the reset signal generation unit 15, when the potential of the reset signal RST is L level, the outputs of all the stages in the shift register unit 12 are L level of low potential. On the other hand, when the potential of the reset signal RST is at the H level, the shift register unit 12 operates. The signals output from the data line 17 are sequentially transferred to the shift register at the rising edge of the clock signal.
Here, the first data D1 is set to the high potential H. The first data D1 is a signal for operating the latch circuit unit 13.
The subsequent n data, excluding the data D1, are set to values giving an arbitrary magnetic flux distribution to each of the n magnetic field generators 10. At the falling edge of the nth clock, the data D1 input to the first stage of the shift register unit 12 at the rising edge of the first clock is input to the n + 1th stage of the shift register unit 12, and is input to the latch circuit unit 13. Is output. At this time, the 1st to n-th outputs of the shift register unit 12 are latched by the latch circuit unit 13.

When a low-potential L-level signal is written in the latch circuit portion 13, the transistor T2 illustrated in FIG. 4 is in an operating state, and a current flows from the high-potential line VDD toward the low-potential line VSS. Accordingly, since the current flows counterclockwise in FIG. 4 (arrow L in the drawing), a magnetic field is generated from the back side of the drawing to the front side of the drawing (reference symbol A in the drawing).
Further, when a high-potential H-level signal is written in the latch circuit portion 13, the transistor T1 illustrated in FIG. 4 is activated, and a current flows from the high-potential line VDD toward the low-potential line VSS. Accordingly, since the current flows clockwise (arrow R in the figure) in FIG. 4, a magnetic field is generated from the front side to the back side of the paper (reference numeral B in the figure).
A magnetic field is generated in the normal direction of the surface of the IC card K1 by generating a magnetic field in all the n magnetic field generators 10, and desired data is obtained with an existing magnetic reader as if it were a magnetic stripe. It can be read.

As described above, in the present embodiment, the magnetic field generation unit 10 generates a magnetic field in the normal direction of the surface of the electron magnetic stripe unit 1, so that the reading accuracy by the reader of the external device can be improved.
Further, according to the present embodiment, since the electronic magnetic stripe unit 1 includes the selection transistor unit 16 corresponding to each of the plurality of magnetic field generation units 10, the magnetic field generated by the magnetic field generation unit 10 is determined by the operation of the selection transistor unit 16. Can be generated. Further, since the selection transistor unit 16 is built in the electromagnet stripe portion 1, only the driver circuit and the power supply line need be provided outside the electromagnet stripe portion 1. Therefore, the number of wirings can be reduced compared to the conventional case.
On the other hand, the control LSI in the prior art has a problem that it is difficult to mount on a flexible substrate because it is relatively large in size and hard, but this embodiment solves such technical problems. The mounting on the flexible substrate can be facilitated.

Further, in the IC card K1, not only the magnetic field generating unit 10 and the selection transistor unit 16, but also the driver circuit unit 11 can be incorporated in the electronic magnetic stripe unit 1.
Furthermore, since the driver circuit unit 11 is integrally formed, the number of connection terminals can be greatly reduced, and mounting on the IC card K1 is facilitated. Moreover, the mechanical strength when the electromagnet stripe portion 1 is mounted on the IC card K1 can be increased by using the peeling transfer technique. For example, if such an exfoliation transfer technique is applied to form the electromagnet stripe portion 1 on the IC card K1, an inexpensive substrate having an appropriate strength such as a plastic substrate can be adopted as the insulating substrate. The mechanical strength of the part 1 can be increased.

  Further, the electron magnetic stripe portion 1 has a plurality of track portions extending in the same direction as the electron magnetic stripe portion 1, and the magnetic field generation portion 10 and the selection transistor portion 16 are provided in each of the track portions. In some cases, a plurality of magnetic field generation units 10 can be provided as compared with the electro-magnetic stripe unit 1 having only one track. Thereby, more information can be read and written.

  Further, since each of the magnetic field generation units 10 can generate a magnetic field independently, the magnetic field generation unit 10 can independently generate a magnetic field when the selection transistor unit 16 operates. . Therefore, a magnetic field can be generated only in the necessary magnetic field generator 10 among the plurality of magnetic field generators 10. In addition, when each of the magnetic field generation units 10 is not provided independently, there is an effect of canceling out the magnetic field between the adjacent magnetic field generation units 10, but the magnetic field generation unit 10 as in the present embodiment. Since each is provided independently, a magnetic field can be generated without such a problem.

In addition, since the direction of the current flowing through the coils C1 and C2 is controlled by the H level or L level of the potential applied to the gate lines M1 to Mn of the transistors T1 and T2, the magnetic field generator 10 generates the current. The direction of the magnetic field to be determined can be determined. Therefore, the direction of the magnetic field can be easily determined.
On the other hand, in the prior art, since the magnetic field strength changes depending on the current value applied to the conductive line, it is difficult to generate a stable magnetic field. However, in the present embodiment, the common gate line in the transistors T1 and T2 is used. Since the direction of the current flowing through the coil C1 and the coil C2 is controlled and the direction of the magnetic field is determined by the level of the potential applied to, a stable magnetic field can be generated in a desired direction. Thereby, the magnetic field in the normal direction of the surface of the electron magnetic stripe part 1 can be generated more reliably, and the reading accuracy by the reader of the external device can be further improved.

  In addition, by inputting the clock signal generated by the clock signal generation unit 14 to the shift register unit 12, a data signal can be sequentially input to each of the plurality of selection transistor units 16. Further, when the clock signal is input to the latch circuit 13, the latch circuit 13 can hold the data signal given to the selection transistor portion 16. The data signal thus held is applied to the gate electrode of the selection transistor section 16 via the gate line, and the selection transistor section 16 is driven, and the normal direction of the surface of the electron magnetic stripe section 1 in the magnetic field generation section 10 A magnetic field can be generated. Accordingly, when the driver circuit unit 11 operates, the plurality of selection transistor units 16 can be operated, and a magnetic field can be generated in the magnetic field generation unit 10 corresponding to the selection transistor unit 16.

(Variation 1 of the electronic magnetic stripe part)
Next, with reference to FIG. 6, the modification 1 of an electronic magnetic stripe part is demonstrated.
Here, FIG. 6A is a circuit diagram for explaining the electron magnetic stripe part in the first modification, and FIG. 6B is a circuit diagram for explaining the magnetic field generating part in the first modification in detail. is there.
In this modification, only different parts from the above-described embodiment will be described, and the same components will be denoted by the same reference numerals and the description will be simplified.

As shown in FIG. 6, the magnetic field generation unit 10 includes coils C1 and C2 and diodes X1 to X6 provided in the coils C1 and C2. The coils C1 and C2 have a common line L1, and the common line L1 supplies a current flowing from the high potential line VDD to the low potential line VSS to each of the coils C1 and C2.
In the coil C1, a coil wiring L2 connected to the common wiring L1 and opposite to the coil wiring L1 is provided, and diodes X1 to X3 are connected between the common wiring L1 and the coil wiring L2. Yes. Here, each of the diodes X1 to X3 can pass a current only in the direction from the common wiring L1 to the coil wiring L2.
On the other hand, the coil C2 is provided with a coil wire L3 that is connected to and opposed to the common wire L1, and diodes X4 to X6 are connected between the common wire L1 and the coil wire L3. Yes. Here, each of the diodes X4 to X6 can pass a current only in the direction from the common wiring L1 to the coil wiring L3.
In the first modification, by providing such a wiring structure, a plurality of magnetic field generation regions 20a and 20b in which the magnetic field generation unit 10 is divided are formed.
Such coils C1 and C2 are formed in the same layer.

Next, the direction of the current flowing in the magnetic field generator 10 having such a configuration and the direction of the generated magnetic field will be described.
First, when the transistor T2 is in an operating state, a current that flows from the high potential line VDD toward the low potential line VSS flows from the common line L1 toward the coil line L3. Current also flows through the diodes X4 to X6. Accordingly, when the currents i1 to i4 flow, a magnetic field is generated from the front side to the back side of the paper (reference numeral B in the drawing) in the magnetic field generation region 20b.
Further, when the transistor T1 is in an operating state, a current that flows from the high potential line VDD toward the low potential line VSS flows from the common line L1 toward the coil line L2. Current also flows through the diodes X1 to X3. Accordingly, when the currents i5 to i8 flow, a magnetic field is generated from the back side to the front side of the paper (reference numeral A in the figure) in the magnetic field generation region 20a.
Further, in each of the magnetic field generation regions 20a and 20b, among the four sides of the wiring that surrounds each region, the current in the same direction flows through the three sides of the wiring, so the magnetic field generated between adjacent regions is canceled out. There is nothing.

As described above, in the first modification, the magnetic field generation unit 10 includes the plurality of magnetic field generation regions 20a and 20b obtained by dividing the magnetic field generation unit 10, so that the plurality of the magnetic field generation units 10 are accompanied with the operation of the transistors T1 and T2. A magnetic field is generated in each of the magnetic field generation regions 20a and 20b. As a result, a magnetic flux is generated substantially at the center in each of the magnetic field generation regions 20a and 20b.
On the other hand, when the magnetic field generation unit 10 does not include such a magnetic field generation region as in the above-described embodiment, one magnetic flux is generated at a substantially central portion of the magnetic field generation unit 10. In this case, the magnetic force per magnetic flux is larger than when there are a plurality of magnetic field generation regions 20a and 20b.
Thus, when the case where there are a plurality of magnetic field generation regions 20a, 20b is compared with the case where there is no magnetic field generation region 20a, 20b, the total sum of the magnetic forces generated by the magnetic field generation unit 10 is equal, but there are a plurality of magnetic field generation regions 20a, 20b Then, since several magnetic flux is produced | generated by the magnetic field generation | occurrence | production part 10, the density of magnetic force can be relieve | moderated. Accordingly, the distribution of magnetic force in the magnetic field generation unit 10 can be made uniform. Thereby, the magnetic field in the normal direction of the surface of the electron magnetic stripe part 1 can be generated more reliably, and the reading accuracy by the reader of the external device can be further improved.

(Modification 2 of the electronic magnetic stripe part)
Next, with reference to FIG. 7, the modification 2 of an electronic magnetic stripe part is demonstrated.
Here, FIG. 7A is a circuit diagram for explaining the electron magnetic stripe part in the second modification, and FIG. 7B is a circuit diagram for explaining in detail the magnetic field generating part in the second modification. is there.
In this modification, only different parts from the above-described embodiment will be described, and the same components will be denoted by the same reference numerals and the description will be simplified.

As shown in FIG. 7, the magnetic field generator 10 includes coils C1 and C2.
Here, each of the coils C1 and C2 includes a plurality of “U” -shaped wiring paths by using only one metal wiring. By having such a wiring path, the magnetic field generation unit 10 includes a plurality of magnetic field generation regions 30a and 30b. In addition, a part of each of the magnetic field generation regions 30a and 30b is arranged so as to overlap each other.
With such a configuration, when a current flows from the high potential line VDD to the low potential line VSS in the coil C1, loop currents r4 to r6 are generated. Further, when a current flows from the high potential line VDD toward the low potential line VSS in the coil C2, loop currents r1 to r3 are generated.
Further, such coils C1 and C2 are arranged in a polymerized manner via an insulating film in the normal direction of the electron magnetic stripe portion 1. Therefore, the coils C1 and C2 are formed in each layer (layer film).

Next, the direction of the current flowing in the magnetic field generator 10 having such a configuration and the direction of the generated magnetic field will be described.
First, when the transistor T2 is in an operating state, current flows in the order of r3, r2, and r1 from the high potential line VDD toward the low potential line VSS. As a result, a magnetic field is generated in the magnetic field generation region 30b from the front side to the back side (reference symbol B in the figure).
In addition, when the transistor T1 is in an operating state, current flows in the order of r6, r5, and r4 from the high potential line VDD toward the low potential line VSS. As a result, a magnetic field is generated in the magnetic field generation region 30a from the back side to the front side of the paper (reference A in the figure).
Further, in each of the magnetic field generation regions 30a and 30b, it is considered that the magnetic field generated in the magnetic field generation regions 30a and 30b is canceled by the magnetic field generated between adjacent regions, as shown in FIG. 7B. Furthermore, the amount of magnetic field cancellation is minimized by reducing the distance between the regions.

As described above, in the second modification, the magnetic field generation unit 10 includes the plurality of magnetic field generation regions 30a and 30b obtained by dividing the magnetic field generation unit 10, and accordingly, the plurality of the magnetic field generation units 10 are accompanied with the operations of the transistors T1 and T2. A magnetic field is generated in each of the magnetic field generation regions 30a and 30b. As a result, a magnetic flux is generated substantially at the center in each of the magnetic field generation regions 30a and 30b.
On the other hand, when the magnetic field generation unit 10 does not include such a magnetic field generation region as in the above-described embodiment, one magnetic flux is generated at a substantially central portion of the magnetic field generation unit 10. In this case, the magnetic force per magnetic flux becomes larger compared to the case where there are a plurality of magnetic field generation regions 30a and 30b.
Thus, when the case where there are a plurality of magnetic field generation regions 30a and 30b is compared with the case where there are no magnetic field generation regions 30a and 30b, the sum of the magnetic forces generated by the magnetic field generation unit 10 is the same, but there are a plurality of magnetic field generation regions 30a and 30b Then, since several magnetic flux is produced | generated by the magnetic field generation | occurrence | production part 10, the density of magnetic force can be relieve | moderated. Accordingly, the distribution of magnetic force in the magnetic field generation unit 10 can be made uniform. Thereby, the magnetic field in the normal direction of the surface of the electron magnetic stripe part 1 can be generated more reliably, and the reading accuracy by the reader of the external device can be further improved.

(Second embodiment of IC card)
Next, an embodiment of an IC card according to the second embodiment of the present invention will be described with reference to FIGS.
8A is an external view of the front side of the IC card of the present embodiment, FIG. 8B is an external view of the back side of the IC card of the present embodiment, and FIG. 9 processes information from the fingerprint sensor. FIG. 10 is a schematic diagram showing a configuration of a fingerprint sensor, FIG. 11 is a cross-sectional view showing a cross section of an electrophoretic display device, and FIG. 12 is a flowchart for explaining fingerprint authentication in an IC card.
In the present embodiment, the same components as those described above are denoted by the same reference numerals, and the description is simplified.

As shown in FIG. 8, the IC card K2 in the present embodiment is referred to as a fingerprint sensor (capacitive fingerprint sensor) 50 on the front side and an electrophoretic display device (display element, Electro Phoretic Display, hereinafter referred to as EPD). ) 60 and a selection switch 70.
In addition, the IC card K2 includes an electronic magnetic stripe portion 1 on the back side. The electronic magnetic stripe portion 1 is the same as that described in the previous embodiment, and includes a magnetic field generation portion 10 and a driver circuit portion 11.
The IC card K2 is configured to be sandwiched between two plastic base materials, and a control unit 2 such as an IC chip and a battery 3 are provided between the base materials.

(Fingerprint sensor)
As illustrated in FIG. 9, the processing unit 140 includes a data processing unit 141 that performs feature extraction of a fingerprint pattern captured by the fingerprint sensor 50, a memory 142 that stores various types of information such as a feature amount of a specific fingerprint pattern, A comparison unit 143 that compares the feature amount extracted by the data processing unit 141 with the feature amount stored in the memory 142, and a control unit 144 that controls the operation of the IC card K2 are provided. Such processing in the processing unit 140 is performed in the control unit 2 described above.

Also, as shown in FIG. 10, the fingerprint sensor 50 detects the fingerprint pattern by measuring the capacitance that changes in accordance with the capacitance type, that is, the distance between the uneven fingerprint and the detection surface 50a. It is supposed to be. Such a capacitance-type fingerprint sensor 50 can be easily reduced in thickness because a light source is unnecessary, and improves scratch resistance by appropriately selecting a surface protective layer (passivation film). There is a feature that can be.
The fingerprint sensor 50 has a sensor substrate 115, a plurality of scanning lines (not shown) formed in parallel with each other at a predetermined interval on the sensor substrate 115, and orthogonal to the scanning lines. Thus, a plurality of signal lines 116 formed in parallel with each other at a predetermined interval are provided.

A switching element (detection circuit) 112 configured by a transistor or the like is provided at a position corresponding to each of intersections of the plurality of scanning lines and the plurality of signal lines 116.
These scanning lines, signal lines 116, and switching elements 112 constitute an active matrix array 113. On the active matrix array 113, detection electrodes 111 are arranged in a matrix at positions corresponding to the switching elements 112. Is provided.
Each detection electrode 111 is covered with an insulating film (passivation film) 114 so as to cover the entire surface of the active matrix array 113, and the insulating film 114 can come into contact with the finger F of the user of the IC card K2. Yes.
As the active matrix array 113, a MOS transistor array formed on a semiconductor substrate, a thin film transistor (TFT) formed on an insulating substrate, or the like can be used.

In the fingerprint sensor 50 having such a configuration, when the finger F comes into contact with the detection surface 50a, there is a capacitance that is two-dimensionally distributed between the finger F and each of the detection electrodes 111 arranged in a matrix. (C1, C2, C3, etc. in FIG. 10). By electrically reading out the two-dimensionally distributed capacitance values by the active matrix array 113, a fine uneven pattern (extracted fingerprint pattern) formed on the surface of the finger F can be detected. it can. In the fingerprint sensor 50 using the electrostatic capacitance method, in order to avoid discharge destruction due to static electricity charged on the human body, the static electricity charged on the finger F is discharged before detection, and the potential of the finger F is changed to the switching element 112. It is essential that the potential be substantially the same as the ground (reference potential) G level. Furthermore, in order to detect each capacitance value stably, it is preferable to fix the potential of the finger F to a predetermined potential at the time of detection.
For this reason, an electrode different from the detection electrode, that is, a discharge electrode 120 for discharging static electricity charged on the human body is provided on the substrate 50 of the IC card K2.

(EPD)
FIG. 11 is a cross-sectional view showing a cross section of the EPD 60.
On a flexible EPD substrate 211e such as plastic, an electrode film 211d, an electrophoretic display layer 211c, an electrode film 211b, and a surface protective layer 211a for protecting the display portion are laminated.
Here, the EPD base material 211e is the same member as the sensor substrate 115 described above. As will be described later, the drive electrode of the EPD 60 is connected to a thin film transistor, and the image display of the EPD 60 is performed by a switching operation of the thin film transistor. In the present embodiment, the surface protective layer 211a is provided, but the surface protective layer 211a may be omitted.

The electrode film 211b is formed by forming an electrode on a transparent plastic film having excellent dimensional stability such as polyethylene terephthalate (PET), polyethylene naphthalate (PEN), and polyimide. The electrode film 211d is also formed by forming a similar base electrode, but transparency is not necessarily required. The electrode film 211b and the electrode film 211d are electrically connected by the vertically moving electrode 211f.
The electrode film 211b serves as a common electrode to which the same potential is applied over the entire surface, while the active film electrode or segment electrode is formed on the electrode film 211d as a drive electrode.

  The microcapsule 211 forming the electrophoretic display layer 211c has a composite shell of gum arabic / gelatin, urethane resin, urea resin, urea resin, etc. as a capsule shell, and the capsule shell is prepared by an interfacial polymerization method, in-situ method. Known microencapsulation techniques such as a polymerization method, a phase separation method, an interfacial precipitation method, and a spray drying method can be employed. Electrophoretic particles and a dispersion medium are enclosed inside. As the migrating particles, organic or inorganic particles (polymer or colloid) are used. For example, black pigments such as aniline black and carbon black, white pigments such as titanium dioxide, zinc white, and antimony trioxide, azo pigments such as monoazo, diisazone, and polyazo, isoindolinone, yellow lead, yellow iron oxide, and cadmium yellow Yellow pigments such as titanium yellow and antimony, azo pigments such as monoazo, disazo and polyazo, red pigments such as quinacridone red and chrome vermillion, phthalocyanine blue, indanthrene blue, anthraquinone dyes, bitumen, ultramarine blue, cobalt blue, etc. One or two or more of blue pigments, green pigments such as phthalocyanine green, and the like can be used. Dispersion medium is colorless or dyed with water, alcohol solvents such as methanol, ethanol, isopropanol, butanol, octanol, methyl cellosolve, various esters such as ethyl acetate, butyl acetate, acetone, methyl ethyl ketone, methyl isobutyl ketone Such as ketones, aliphatic hydrocarbons such as pentane, hexane and octane, alicyclic hydrocarbons such as cyclohexane and methylcyclohexane, benzene, toluene, xylene, hexylbenzene, hebutylbenzene, octylbenzene and nonyl Aromatic hydrocarbons such as benzenes having a long chain alkyl group such as benzene, decylbenzene, undecylbenzene, dodecylbenzene, tridecylbenzene, tetradecylbenzene, methylene chloride, chloroform, carbon tetrachloride, 1,2-di Halogenated hydrocarbons such as Roroetan, can be used by blending a surfactant or the like alone or a mixture thereof such as carboxylic acid salts, or various other oils.

  In electrophoresis, the electrophoretic particles are charged positively or negatively in advance, and the dispersion medium and the electrophoretic particles are colored different from each other. For example, when titanium oxide, which is white particles, is positively charged and carbon black, which is black particles, is negatively charged, an electric field is applied to the two electrode films 211b and 211d so that the electrode film 211b is a negative electrode and an electrode film. When 211d becomes a positive electrode, positively charged white particles are drawn to the electrode film 211b side, and black particles are drawn to the electrode film 211d side. Therefore, by setting the electrode film 211b as a transparent electrode, the electrode film 211b side When observed from above, the portion appears white. Conversely, when the electrode film 211b is a positive electrode and the electrode film 211d is a negative electrode, positively charged white particles are drawn to the electrode film 211d side, and black particles are drawn to the electrode film 211b side. When observed from above the electrode film 211b, the portion looks black.

Since the EPD 60 has a large number of the above-described microcapsules 211, by controlling the electric field of each address electrode of the electrode films 211b and 211d, a desired character, number, or symbol is displayed with white and black pixels. be able to.
Note that when the microcapsule 211 is driven by an active matrix driving method, the electrode film 211d is independently patterned for each pixel as a pixel electrode, and includes a thin film transistor, a signal electrode, and a scanning electrode (not shown), and the electrode film 211b. Is a transparent common electrode uniformly formed on a light-transmitting substrate. In this case, if the electrode film 211b is a common electrode, the entire surface has the same potential (for example, the potential is set to zero). Therefore, by controlling the electric field of each address electrode on the electrode film 211d side (giving a positive or negative potential) Based on the principle described above, particles in the microcapsule 211 at the electrode position can be moved to display a desired image. Similarly, by using the electrode film 211d as a common electrode and controlling the electric field of each address electrode on the electrode film 211b side, the particles in the microcapsule 211 at the electrode position are moved to display a desired image. Also good.
In the case of time-division driving, the electrode films 211b and 211d are composed of transparent electrodes made of transparent conductors such as line-shaped ITO (Indium Tin Oxide) that are orthogonal to each other, and microelectrodes are formed in the region where both electrodes intersect. A capsule 211 is placed.
The driving method is not limited to the above-described one, and an optimal one may be selected according to the application. Further, various diameters of the microcapsule 211 can be adopted.

The selection switch 70 selects and determines an application that can be used with the IC card K2. A plurality of the applications are displayed on the EPD 60. The application displayed on the EPD 60 is selected and determined using the selection switch 70.
The selection switch 70 not only selects and determines an application, but also functions as a switch for switching the IC card K2 from the power-off state (power-off state) to the ON state (power-on state). It is like that.

The control unit 2 built in the IC card K2 includes a storage circuit including an arithmetic circuit such as a CPU, a drive circuit such as a driver, and a memory such as ROM and RAM. By operating such a circuit, the operations of the fingerprint sensor 50 and the EPD 60 are controlled. Specifically, input signal determination in the fingerprint sensor 50 and display control of the EPD 60 are performed. In addition, communication with an external device input / output via the input from the selection switch 70 and the connection IC terminal 12 is performed. Further, as will be described later, the control unit 2 stores a plurality of applications using the IC card K2 and programs corresponding to the applications.
The control unit 2 controls the electron magnetic stripe unit 1 so as to generate a magnetic field in the normal direction of the surface of the electron magnetic stripe unit 1. Thereby, the external device can read the information of the IC card K2.

  The fingerprint sensor 50, the EPD 60, and the control unit 2 as described above have a configuration using thin film transistors. By using such a thin film transistor, it is possible to electrically read out fingerprint information as capacitance, to apply a voltage to the electrophoretic display layer 211c, and to calculate and store various information. . Such a thin film transistor is formed by the above-described peeling transfer technology, and by using the peeling transfer technology, it can be formed only on a hard substrate having heat resistance such as a glass substrate until now. The thin film transistor that could not be formed can be transferred and formed on a flexible substrate having heat resistance lower than that of, for example, a glass substrate. Therefore, it is possible to easily form a thin film transistor on a flexible resin substrate, and it is possible to realize a flexible IC card K2 including the fingerprint sensor 50, the EPD 60, and the control unit 2. Further, by using the peeling transfer technique, the fingerprint sensor 50, the EPD 60, and the control unit 2 can be integrally formed on the IC card K2.

(IC card user authentication)
The IC card K2 of this embodiment can be used after the user is specified by comparing the information of the specific fingerprint pattern stored in the control unit 2 in advance with the fingerprint pattern input to the fingerprint sensor. It has become.
Next, the user authentication procedure in the IC card K2 will be described with reference to FIG.

First, the IC card K2 is turned on. Here, the power is turned on by turning on the selection switch 70 or touching the fingerprint sensor 50.
Next, fingerprint authentication is performed (step S2). The step S2 is performed when the user touches the fingerprint sensor 50 with the finger F as shown in FIG. Then, the data processing unit 141 in the processing unit 140 performs feature extraction of the fingerprint pattern captured by the fingerprint sensor 50. Further, the comparison unit 143 compares the information on the fingerprint pattern with information on a specific fingerprint pattern stored in the memory 142.
Here, as a result of the fingerprint authentication in step S2, if the user's fingerprint matches a preset fingerprint, the IC card becomes valid, and a magnetic field is generated in the electronic magnetic stripe portion 1 (step S3). ). In the electro-magnetic stripe section 1, the driver circuit section 11 operates and the selection transistor section 16 operates, so that a magnetic field is generated from the magnetic field generation section 10. The EPD 60 displays that the IC card K2 is valid.

  Next, in a state where a magnetic field is generated in the electronic magnetic stripe portion 1 of the IC card K2, the user passes the IC card K2 through a reader or writer of the external device, whereby the magnetic data authentication of the IC card K2 is performed in the external device. Is performed (step S4). Here, the authentication is performed by comparing the user data stored in advance in the external device with the magnetic data of the IC card K2. Then, the authentication result is displayed by the EPD 60.

As described above, in the present embodiment, since the IC card K2 includes the fingerprint sensor 50, it is possible to perform personal authentication of the user of the IC card K2, so that the user can be limited. The misuse of the IC card K2 can be prevented. Furthermore, in the IC card K2 of the present embodiment, not only such personal authentication is performed, but also an external device can read information through the electronic magnetic stripe unit 1. Therefore, not only security by fingerprint authentication can be obtained, but also reading through the electronic magnetic stripe unit 1 can be performed, so that the IC card K2 having higher security can be realized.
Further, as described above, in the present embodiment, the magnetic field generation unit 10 and the selection transistor unit 16 are built in the electron magnetic stripe unit 1 and are not provided with a control LSI or conductive line as in the prior art. Since space saving of the IC card K2 is achieved, a device such as a capacitive fingerprint sensor can be easily provided in addition to the IC card K2.

  Further, the IC card K2 of this embodiment includes an EPD 60, and the EPD 60 displays information obtained through the electronic magnetic stripe unit 1 and authentication information by the fingerprint sensor 50. Therefore, it is possible to display the result of personal authentication and the result and information when the external device reads information from the electronic magnetic stripe unit 1. Thereby, the user can confirm various information easily.

  The EPD 60 can hold an image without applying a voltage thereafter by applying a predetermined voltage to a driving element such as a TFT for a predetermined time. That is, it is a display element having image storage and display memory properties. Therefore, since power consumption for displaying an image can be reduced, low power consumption can be realized, and an IC card K2 having display memory properties can be realized.

Further, since the IC card K2 further includes a control unit 2 that controls the electronic magnetic stripe unit 1, the fingerprint sensor 50, and the EPD 60, the fingerprint information of the user of the IC card K2, the input information by the user, The storage information stored in the storage circuit can be processed by the calculation circuit, and the magnetic stripe part 1 can generate a magnetic field based on the calculation result. In addition, the calculation result can be displayed on the EPD 60.
Therefore, by providing the control unit 2 in the IC card K2, the electronic magnetic stripe unit 1, the fingerprint sensor 50, and the EPD 60 can be controlled.

Further, in the IC card K2, the electronic magnetic stripe part 1, the fingerprint sensor 50, the EPD 60, and the control part 2 are formed of a thin film transistor and are integrally formed. Therefore, the IC card K2 can be easily manufactured by a peeling transfer technique. can do. Thereby, since the IC card K2 can easily form a structure resistant to bending stress, the IC card K2 having excellent strength can be realized.
Further, by forming them integrally, a post-process for forming wirings and the like can be omitted, and the number of parts can be reduced, so that manufacturing cost can be reduced. Further, since it is integrally formed, the IC card K2 can be easily broken if it is modified or counterfeited, that is, the IC card K2 is difficult to be modified or counterfeited, and the security can be further improved.

Such an IC card K2 can be used as various cards that require security, such as functioning as an electronic key or functioning as a credit card.
In addition, this invention is not limited to said 1st and 2nd embodiment, Of course, it can change variously in the range which does not deviate from the summary of this invention.

The block diagram for demonstrating the structure of the IC card which concerns on 1st Embodiment. The block diagram of the electromagnetism stripe part and driver circuit part in 1st Embodiment. The circuit diagram for demonstrating the driver circuit part in 1st Embodiment. The circuit diagram for demonstrating the electromagnetism stripe part in 1st Embodiment. The timing chart figure of operation of the shift register part in a 1st embodiment. The circuit diagram for demonstrating the electromagnetism stripe part in the modification 1. FIG. The circuit diagram for demonstrating the electromagnetism stripe part in the modification 2. FIG. The external view of the IC card which concerns on 2nd Embodiment. The block diagram of the process part which processes the information from the fingerprint sensor in 2nd Embodiment. The schematic diagram which shows the structure of the fingerprint sensor in 2nd Embodiment. Sectional drawing which shows the cross section of the electrophoretic display device in 2nd Embodiment. The flowchart for demonstrating the fingerprint authentication in 2nd Embodiment. The block diagram of the conventional IC card.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Electromagnetic stripe part, 10 ... Magnetic field generation part, 11 ... Driver circuit part, 12 ... Shift register part, 13 ... Latch circuit (latch part), 14 ... Clock signal generation part, 16 ... Selection transistor part (switching element part) 20a, 20b, 30a30b ... magnetic field generation region, 50 ... fingerprint sensor (capacitive fingerprint sensor), 60 ... EPD (display element, electrophoretic display device), C1 ... coil (first coil), C2 ... coil (Second coil), T1 ... transistor (first transistor), T2 ... transistor (second transistor), K1, K2 ... IC card

Claims (11)

An IC card having an electronic magnetic stripe part,
The electron magnetic stripe portion is
A plurality of magnetic field generators arranged side by side in the extending direction of the electron magnetic stripe part;
A switching element provided corresponding to each of the plurality of magnetic field generators;
Comprising
The IC card, wherein the magnetic field generation unit generates a magnetic field in a normal direction of a surface of the electron magnetic stripe unit. The electron magnetic stripe portion has a plurality of track portions extending in the same direction as the electron magnetic stripe portion,
2. The IC card according to claim 1, wherein each of the track portions is provided with the magnetic field generating portion and the switching element portion.   3. The IC card according to claim 1, wherein each of the magnetic field generation units independently generates a magnetic field. The magnetic field generator has a first coil and a second coil,
The switching element unit includes a first transistor corresponding to the first coil and a second transistor corresponding to the second coil;
Each of the first transistor and the second transistor is connected to a common gate line, and a direction of a current flowing through the first coil and the second coil is controlled by a potential applied to the gate line. The IC card according to any one of claims 1 to 3. The electro-magnetic stripe part comprises a driver circuit part connected to the switching element part,
The driver circuit section
A shift register for applying a data signal to each of the switching elements;
A latch unit for holding a data signal applied to the switching element unit;
A clock signal generator for providing a clock signal for operating the shift register unit and the latch unit;
The IC card according to any one of claims 1 to 4, further comprising:   6. The IC card according to claim 1, wherein the switching element unit and the driver circuit unit are formed of a thin film transistor and are formed integrally with the electromagnet stripe portion. 7. .   The IC card according to any one of claims 1 to 6, wherein the magnetic field generation unit includes a plurality of magnetic field generation regions obtained by dividing the magnetic field generation unit.   The IC card according to any one of claims 1 to 7, further comprising a capacitive fingerprint sensor.   2. The display device according to claim 1, further comprising a display element configured to display at least one of information obtained through the electromagnet stripe portion and authentication information in the capacitive fingerprint sensor. The IC card according to claim 8.   The IC card according to any one of claims 1 to 9, further comprising a control unit that controls the electronic magnetic stripe unit, the capacitive fingerprint sensor, and the display element. 11. The electronic magnetic stripe part, the capacitive fingerprint sensor, the display element, and the control part are formed of a thin film transistor and are integrally formed. The IC card according to one item.

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