JP2006066904A5 - - Google Patents
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- JP2006066904A5 JP2006066904A5 JP2005219784A JP2005219784A JP2006066904A5 JP 2006066904 A5 JP2006066904 A5 JP 2006066904A5 JP 2005219784 A JP2005219784 A JP 2005219784A JP 2005219784 A JP2005219784 A JP 2005219784A JP 2006066904 A5 JP2006066904 A5 JP 2006066904A5
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- laser
- laser beam
- oscillator
- irradiation
- irradiation surface
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- 230000001678 irradiating Effects 0.000 claims 6
- 229910052691 Erbium Inorganic materials 0.000 claims 4
- 229910052779 Neodymium Inorganic materials 0.000 claims 4
- 229910052775 Thulium Inorganic materials 0.000 claims 4
- 229910052769 Ytterbium Inorganic materials 0.000 claims 4
- 229910052804 chromium Inorganic materials 0.000 claims 4
- 229910052715 tantalum Inorganic materials 0.000 claims 4
- 230000003287 optical Effects 0.000 claims 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims 2
- 229910000673 Indium arsenide Inorganic materials 0.000 claims 2
- 230000000903 blocking Effects 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 2
- 229910052594 sapphire Inorganic materials 0.000 claims 2
- 239000010980 sapphire Substances 0.000 claims 2
Claims (11)
前記第１のレーザビームが照射面に照射される範囲を覆って前記第２のレーザ発振器より出射される第２のレーザビームを照射する手段と、
前記第１のレーザビームおよび前記第２のレーザビームに対して、前記照射面を相対的に第１の方向に移動する手段と、
前記第１のレーザビームおよび前記第２のレーザビームに対して、前記照射面を相対的に第２の方向に移動する手段とを有し、
前記第２のレーザビームは基本波であり、前記第１のレーザビームは前記第２のレーザビームの高調波であることを特徴とするレーザ照射装置。 A first laser oscillator, a second laser oscillator, a slit for blocking an end of the first laser beam emitted from the first laser oscillator, and a condenser lens;
Means for irradiating a second laser beam emitted from the second laser oscillator so as to cover a range in which the first laser beam is irradiated onto an irradiation surface;
Means for moving the irradiation surface in a first direction relative to the first laser beam and the second laser beam;
With respect to the first laser beam and said second laser beam, have a means for moving the irradiation surface relatively the second direction,
The laser irradiation apparatus, wherein the second laser beam is a fundamental wave, and the first laser beam is a harmonic of the second laser beam .
前記第１のレーザビームが回折光学素子を通った後に照射面に照射される範囲を覆って、前記第２のレーザ発振器より出射される第２のレーザビームを照射する手段と、
前記第１のレーザビームおよび前記第２のレーザビームに対して、前記照射面を相対的に第１の方向に移動する手段と、
前記第１のレーザビームおよび前記第２のレーザビームに対して、前記照射面を相対的に第２の方向に移動する手段とを有し、
前記第２のレーザビームは基本波であり、前記第１のレーザビームは前記第２のレーザビームの高調波であることを特徴とするレーザ照射装置。 A first laser oscillator, a second laser oscillator, a diffractive optical element, a slit for blocking an end of the first laser beam emitted from the first laser oscillator, and a condenser lens; Have
Means for irradiating a second laser beam emitted from the second laser oscillator so as to cover a range in which an irradiation surface is irradiated after the first laser beam passes through a diffractive optical element;
Means for moving the irradiation surface in a first direction relative to the first laser beam and the second laser beam;
With respect to the first laser beam and said second laser beam, have a means for moving the irradiation surface relatively the second direction,
The laser irradiation apparatus, wherein the second laser beam is a fundamental wave, and the first laser beam is a harmonic of the second laser beam .
前記第１のレーザ発振器と前記第２のレーザ発振器は、単結晶のＹＡＧ、ＹＶＯ４、ＹＬＦ、ＹＡｌＯ３、ＧｄＶＯ４、アレキサンドライト、Ｔｉ：サファイア、または多結晶のＹＡＧ、Ｙ２Ｏ３、ＹＶＯ４、ＹＡｌＯ３、ＧｄＶＯ４に、ドーパントとしてＮｄ、Ｙｂ、Ｃｒ、Ｔｉ、Ｈｏ、Ｅｒ、Ｔｍ、Ｔａのうち１種または複数種添加されているものを媒質とする連続発振の固体レーザ、ＧａＮレーザ、ＧａＡｓレーザ、ＩｎＡｓレーザのいずれかであることを特徴とするレーザ照射装置。 In claim 1 or 2 ,
The first laser oscillator and the second laser oscillator include single crystal YAG, YVO 4 , YLF, YAlO 3 , GdVO 4 , alexandrite, Ti: sapphire, or polycrystalline YAG, Y 2 O 3 , YVO 4. , YAlO 3 , GdVO 4 , Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta, which is added as a medium, a continuous oscillation solid-state laser , G aN laser a laser irradiation apparatus, wherein the GaAs laser, is either InAs lasers.
前記第１のレーザ発振器と前記第２のレーザ発振器は、単結晶のＹＡＧ、ＹＶＯ４、ＹＬＦ、ＹＡｌＯ３、ＧｄＶＯ４、または多結晶のＹＡＧ、Ｙ２Ｏ３、ＹＶＯ４、ＹＡｌＯ３、ＧｄＶＯ４に、ドーパントとしてＮｄ、Ｙｂ、Ｃｒ、Ｔｉ、Ｈｏ、Ｅｒ、Ｔｍ、Ｔａのうち１種または複数種添加されているものを媒質とする発振周波数が１０ＭＨｚ以上のパルスレーザであることを特徴とするレーザ照射装置。 In claim 1 or 2 ,
The first laser oscillator and the second laser oscillator may be single crystal YAG, YVO 4 , YLF, YAlO 3 , GdVO 4 , or polycrystalline YAG, Y 2 O 3 , YVO 4 , YAlO 3 , GdVO 4. Further, the present invention is a pulse laser having an oscillation frequency of 10 MHz or more using one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta as dopants as a medium. Laser irradiation device.
前記集光レンズは、シリンドリカルレンズまたは球面レンズであることを特徴とするレーザ照射装置。 In any one of Claims 1 thru | or 4 ,
The laser irradiation apparatus, wherein the condenser lens is a cylindrical lens or a spherical lens.
前記第１の方向と前記第２の方向は互いに直交していることを特徴とするレーザ照射装置。 In any one of Claims 1 thru | or 5 ,
The laser irradiation apparatus, wherein the first direction and the second direction are orthogonal to each other.
前記第１のレーザ光をスリットを通して第２のレーザ光とし、
前記第２のレーザ光を集光レンズを用いて第３のレーザ光とし、
前記第３のレーザ光を照射面に照射し、
第２のレーザ発振器より発振した第４のレーザ光を前記照射面において前記第３のレーザ光を覆うように重ねて照射し、
前記第３のレーザと前記第４のレーザを前記照射面に対して相対的に走査し、
前記第４のレーザ光は基本波であり、前記第３のレーザ光は前記第４のレーザ光の高調波であることを特徴とするレーザ照射方法。 First laser light is oscillated from the first laser oscillator,
The first laser beam is converted into a second laser beam through a slit,
The second laser beam is converted into a third laser beam using a condenser lens,
Irradiating the irradiation surface with the third laser beam;
Irradiating the fourth laser beam oscillated from the second laser oscillator so as to cover the third laser beam on the irradiation surface,
Scanning the third laser and the fourth laser relative to the irradiation surface ;
The laser irradiation method, wherein the fourth laser beam is a fundamental wave, and the third laser beam is a harmonic of the fourth laser beam .
前記第１のレーザ光を回折光学素子を通して第２のレーザ光とし、
前記第２のレーザ光をスリットを通して第３のレーザ光とし、
前記第３のレーザ光を集光レンズを用いて第４のレーザ光とし、
前記第４のレーザ光を照射面に照射し、
第２のレーザ発振器より発振した第５のレーザ光を前記照射面において前記第４のレーザ光を覆うように重ねて照射し、
前記第４のレーザと前記第５のレーザを前記照射面に対して相対的に走査し、
前記第５のレーザ光は基本波であり、前記第４のレーザ光は前記第５のレーザ光の高調波であることを特徴とするレーザ照射方法。 First laser light is oscillated from the first laser oscillator,
The first laser beam is converted into a second laser beam through a diffractive optical element;
The second laser beam is converted into a third laser beam through a slit,
The third laser light is converted into a fourth laser light using a condenser lens,
Irradiating the irradiation surface with the fourth laser beam;
Irradiating the fifth laser beam oscillated from the second laser oscillator so as to cover the fourth laser beam on the irradiation surface,
Scanning the fourth laser and the fifth laser relative to the irradiation surface ;
The laser irradiation method, wherein the fifth laser beam is a fundamental wave, and the fourth laser beam is a harmonic of the fifth laser beam .
前記第１のレーザ発振器と前記第２のレーザ発振器は、単結晶のＹＡＧ、ＹＶＯ４、ＹＬＦ、ＹＡｌＯ３、ＧｄＶＯ４、アレキサンドライト、Ｔｉ：サファイア、または多結晶のＹＡＧ、Ｙ２Ｏ３、ＹＶＯ４、ＹＡｌＯ３、ＧｄＶＯ４に、ドーパントとしてＮｄ、Ｙｂ、Ｃｒ、Ｔｉ、Ｈｏ、Ｅｒ、Ｔｍ、Ｔａのうち１種または複数種添加されているものを媒質とする連続発振の固体レーザ、ＧａＮレーザ、ＧａＡｓレーザ、ＩｎＡｓレーザのいずれかを用いることを特徴とするレーザ照射方法。 In claim 7 or 8 ,
The first laser oscillator and the second laser oscillator include single crystal YAG, YVO 4 , YLF, YAlO 3 , GdVO 4 , alexandrite, Ti: sapphire, or polycrystalline YAG, Y 2 O 3 , YVO 4. , YAlO 3 , GdVO 4 , Nd, Yb, Cr, Ti, Ho, Er, Tm, Ta, which is added as a medium, a continuous oscillation solid-state laser , G aN laser , laser irradiation method, which comprises using GaAs laser, any of InAs lasers.
前記第１のレーザ発振器と前記第２のレーザ発振器は、単結晶のＹＡＧ、ＹＶＯ４、ＹＬＦ、ＹＡｌＯ３、ＧｄＶＯ４、または多結晶のＹＡＧ、Ｙ２Ｏ３、ＹＶＯ４、ＹＡｌＯ３、ＧｄＶＯ４に、ドーパントとしてＮｄ、Ｙｂ、Ｃｒ、Ｔｉ、Ｈｏ、Ｅｒ、Ｔｍ、Ｔａのうち１種または複数種添加されているものを媒質とする発振周波数が１０ＭＨｚ以上のパルスレーザを用いることを特徴とするレーザ照射方法。 In claim 7 or 8 ,
The first laser oscillator and the second laser oscillator may be single crystal YAG, YVO 4 , YLF, YAlO 3 , GdVO 4 , or polycrystalline YAG, Y 2 O 3 , YVO 4 , YAlO 3 , GdVO 4. In addition, a pulsed laser having an oscillation frequency of 10 MHz or more using one or more of Nd, Yb, Cr, Ti, Ho, Er, Tm, and Ta as a medium is used as a dopant. Laser irradiation method.
前記集光レンズは、シリンドリカルレンズまたは球面レンズを用いることを特徴とするレーザ照射方法。 In any one of Claims 7 thru | or 10 ,
The condensing lens is a laser irradiation method using a cylindrical lens or a spherical lens.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005219784A JP4942959B2 (en) | 2004-07-30 | 2005-07-29 | Laser irradiation apparatus and laser irradiation method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004224676 | 2004-07-30 | ||
| JP2004224676 | 2004-07-30 | ||
| JP2005219784A JP4942959B2 (en) | 2004-07-30 | 2005-07-29 | Laser irradiation apparatus and laser irradiation method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006066904A JP2006066904A (en) | 2006-03-09 |
| JP2006066904A5 true JP2006066904A5 (en) | 2008-09-04 |
| JP4942959B2 JP4942959B2 (en) | 2012-05-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2005219784A Expired - Fee Related JP4942959B2 (en) | 2004-07-30 | 2005-07-29 | Laser irradiation apparatus and laser irradiation method |
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| JP (1) | JP4942959B2 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007294082A (en) * | 2006-03-31 | 2007-11-08 | Semiconductor Energy Lab Co Ltd | Method for deleting data from nand type nonvolatile memory |
| US20090253273A1 (en) * | 2006-06-21 | 2009-10-08 | Hightec Systems Corporation | Method of heat-treating semiconductor |
| US8047442B2 (en) * | 2007-12-03 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP5464972B2 (en) * | 2009-10-29 | 2014-04-09 | 住友重機械工業株式会社 | Laser processing equipment |
| KR101391695B1 (en) | 2012-04-24 | 2014-05-07 | 삼성디스플레이 주식회사 | LASER CRYSTALLIZATION APPARATUS AND Method for manufacturing thin film transistor substrate USING THE SAME |
| JP2023131583A (en) * | 2022-03-09 | 2023-09-22 | 株式会社ブイ・テクノロジー | Laser annealing device and laser annealing method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3477888B2 (en) * | 1995-02-07 | 2003-12-10 | ソニー株式会社 | Method for manufacturing thin film semiconductor device |
| JPH09270393A (en) * | 1996-03-29 | 1997-10-14 | Sanyo Electric Co Ltd | Laser light irradiation device |
| JP4289816B2 (en) * | 2001-03-22 | 2009-07-01 | シャープ株式会社 | Semiconductor device and manufacturing method thereof |
| JP3903761B2 (en) * | 2001-10-10 | 2007-04-11 | 株式会社日立製作所 | Laser annealing method and laser annealing apparatus |
| JP2003168645A (en) * | 2001-12-03 | 2003-06-13 | Hitachi Ltd | Semiconductor thin film device, its manufacturing method, and image display device |
| JP4813743B2 (en) * | 2002-07-24 | 2011-11-09 | 株式会社 日立ディスプレイズ | Manufacturing method of image display device |
| JP2004128421A (en) * | 2002-10-07 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | Laser irradiation method, laser irradiation device, and method for manufacturing semiconductor device |
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2005
- 2005-07-29 JP JP2005219784A patent/JP4942959B2/en not_active Expired - Fee Related
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