JP2006060077A - Semiconductor device, connection structure thereof, and packaging method thereof - Google Patents

Semiconductor device, connection structure thereof, and packaging method thereof Download PDF

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JP2006060077A
JP2006060077A JP2004241319A JP2004241319A JP2006060077A JP 2006060077 A JP2006060077 A JP 2006060077A JP 2004241319 A JP2004241319 A JP 2004241319A JP 2004241319 A JP2004241319 A JP 2004241319A JP 2006060077 A JP2006060077 A JP 2006060077A
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semiconductor device
substrate
wiring
circuit board
connection
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Keiji Kato
藤 慶 治 加
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Toshiba Corp
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Toshiba Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device by which wiring is formed with less restraint in a circuit board to which the device is connected, and high integration and high reliability are attained; and to provide a connection structure comprising the semiconductor device and the circuit board connected to the device. <P>SOLUTION: The semiconductor device includes a semiconductor chip (1); and substrates (2a, 2b, 2c, 2d) which support the semiconductor chip, in which interconnection electrodes of the semiconductor chip are formed at lower face sides, and which include step shape projected portions. The step shape projected portions of the substrates decrease gradually in projection amount toward outer peripheries of the substrates. The connection structure includes such a semiconductor device and the wiring board having wiring pads on surfaces of recesses which hold the projects and are formed in the shape of step, in which the pads are connected to the interconnection electrodes formed at the projects. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、半導体装置、この半導体装置と回路基板との接続構造、並びに回路基板と半導体装置を接続する実装方法にかかり、特に面実装型の半導体装置およびこれを使用したものに関する。   The present invention relates to a semiconductor device, a connection structure between the semiconductor device and a circuit board, and a mounting method for connecting the circuit board and the semiconductor device, and more particularly to a surface-mount type semiconductor device and one using the same.

近年、半導体装置における高集積化が進んでおり、半導体チップとほぼ同じ大きさを持つチップ・スケール・パッケージ(Chip Scale Package(以後CSPと略す))や特定の面全体に接続部を有する面実装半導体装置が主流を占めつつある。高集積化、小型化の要求はさらに高まっており、よりコンパクトな製品が求められるとともに、回路基板側の高集積化も求められている。   2. Description of the Related Art In recent years, high integration in semiconductor devices has progressed, and chip scale packages (Chip Scale Package (hereinafter abbreviated as CSP)) having almost the same size as semiconductor chips and surface mounts having a connection portion on the entire specific surface. Semiconductor devices are becoming mainstream. The demand for high integration and miniaturization is increasing, and there is a demand for more compact products and higher integration on the circuit board side.

この事情をさらに詳細に説明すると、面実装型の半導体装置の電極構造としては、基板下面のほぼ全面にマトリックス状に電極を形成し、これらの電極に、はんだボールを付着させて接続電極を形成したボール・グリッド・アレイ(Ball Grid Array、以下BGAと略す)や基板下面のほぼ全面にマトリックス状に接続ピンを設けたピン・グリッド・アレイ(Pin Grid Array:以下PGAと略す)等がある。   To explain this situation in more detail, the electrode structure of a surface-mount type semiconductor device is such that electrodes are formed in a matrix on almost the entire bottom surface of the substrate, and solder balls are attached to these electrodes to form connection electrodes. Ball grid array (hereinafter abbreviated as BGA) and pin grid array (hereinafter abbreviated as PGA) in which connection pins are provided in a matrix on almost the entire bottom surface of the substrate.

このような構造を有する面実装型の半導体装置を回路基板に実装する場合、パッケージの中心付近の接続端子と接続して回路基板の外方に向けて配線を引き出す場合には、多数の接続端子を避けて配線を設けるように配線パターンを工夫しなければならなかった。この配線を設計するにあたっては、端子数が増えれば増えるほど配線ルールなどの制約が多くなって配線が複雑化し、高集積化を阻害する要因となっている。   When mounting a surface-mount type semiconductor device having such a structure on a circuit board, when connecting to the connection terminal near the center of the package and drawing the wiring toward the outside of the circuit board, a large number of connection terminals The wiring pattern had to be devised so as to provide wiring while avoiding the above. In designing this wiring, as the number of terminals increases, there are more restrictions on the wiring rules and the like, which complicates the wiring and becomes a factor that hinders high integration.

また、高速動作が求められる環境では配線長などにも厳しい制約があるため、これも高集積化を阻害する要因となっていた。   Further, in an environment where high-speed operation is required, there are severe restrictions on the wiring length and the like, which is also a factor that hinders high integration.

これらの間題を解決する手段の一つとして、回路基板を多層化するとともにスルーホールを開口し、これを導電化して各層間の導通を図る手法が一般化している。このような多層基板の使用は、特に配線の引き回し規則による制約を回避することを可能としている。   As one of means for solving these problems, a method of multilayering a circuit board and opening a through hole and making it conductive so as to conduct between the layers has become common. The use of such a multilayer substrate makes it possible to avoid restrictions due to wiring routing rules.

しかしながら、スルーホールは、実際の製品では回路基板上の各所に多数存在しており、回路基板作成時に孔の位置の合わせずれが1つでも発生した場合、導通の信頼性が低下し、あるいは断線が生ずるという問題がある。   However, in actual products, there are many through holes at various locations on the circuit board, and if any misalignment of the holes occurs when creating the circuit board, the reliability of conduction is reduced or the wire breaks. There is a problem that occurs.

また、BGAタイプの半導体装置の場合、接続端子部がはんだであるため、接続端子直下に回路基板のスルーホールを形成すると、接続端子のはんだが溶融したときにスルーホールに流入し、断線を招く可能性がある。このため、スルーホールと接続端子部の位置をずらせて配置させなければならないという問題がある。   In the case of a BGA type semiconductor device, since the connection terminal portion is solder, if a through hole in the circuit board is formed immediately below the connection terminal, it flows into the through hole when the solder of the connection terminal melts, causing disconnection. there is a possibility. For this reason, there is a problem that the positions of the through hole and the connection terminal portion must be shifted.

これらの問題を回避するために、半導体装置の周縁部から中心部に向かってはんだ高を段階的に高くし、実装基板をこのはんだ高さに対応させて周縁部から中央部に向かって高さ位置が低くなるように多段化することによりスルーホール数を削減する手法が提案されている(特許文献1および2参照)。   In order to avoid these problems, the solder height is increased stepwise from the peripheral part to the center part of the semiconductor device, and the mounting board is raised from the peripheral part to the central part corresponding to the solder height. A method of reducing the number of through holes by increasing the number of stages so that the position is lowered has been proposed (see Patent Documents 1 and 2).

しかしながら、このような手法を採用した場合、同じ半導体素子内で高さの異なるはんだボールを用いるため、はんだ量の制御が困難で、コストがかかるという問題がある。また、実装時には、中央部と周縁部とではんだ大きさが違うことによりリフロー条件に差が生じて実装上の困難もある。しかも実装時には回路基板ヘマウントする時の自重による発生するはんだボールのつぶれは中央部ほど大きいため、短絡の可能性も高くなり、これを避けるために端子間に十分な間隔をとると高集積化が妨げられるという問題がある。
特開2000-312075号公報 特開平9-246684号公報
However, when such a method is adopted, since solder balls having different heights are used in the same semiconductor element, there is a problem that it is difficult to control the amount of solder and cost is increased. Further, during mounting, there is a difficulty in mounting due to a difference in reflow conditions due to a difference in solder size between the central portion and the peripheral portion. In addition, when mounting on the circuit board, the collapse of the solder ball due to its own weight is greater in the center, so the possibility of a short circuit is also increased. There is a problem of being disturbed.
JP 2000-312075 A JP-A-9-246684

したがって、本発明の目的は、接続相手の回路基板において制約の少ない配線形成を可能とし、高集積化、高信頼性化が可能な半導体装置を提供する事である。   Accordingly, an object of the present invention is to provide a semiconductor device that enables wiring formation with less restrictions on a circuit board to be connected, and can be highly integrated and highly reliable.

本発明の他の目的は、高集積化した半導体装置と、配線形成に制約のない回路基板との高信頼性の接続構造を提供することである。   Another object of the present invention is to provide a highly reliable connection structure between a highly integrated semiconductor device and a circuit board that does not restrict wiring formation.

本発明のさらに他の目的は、高集積化した半導体装置を回路基板に高信頼性の接続を行うことが可能な実装方法を提供することである。   Still another object of the present invention is to provide a mounting method capable of connecting a highly integrated semiconductor device to a circuit board with high reliability.

本発明にかかる半導体装置の一態様によれば、半導体チップと、この半導体チップを支持し、前記半導体チップの接続電極が下面側に形成されると共に、階段状の突出部分を有する基板とを備え、前記基板の前記階段状の突出部分は、前記基板の外周に向かうにしたがって段階的に突出量が減少することを特徴とする。   According to one aspect of the semiconductor device of the present invention, the semiconductor device includes a semiconductor chip, and a substrate that supports the semiconductor chip, the connection electrode of the semiconductor chip is formed on a lower surface side, and has a stepped protruding portion. The protruding amount of the stepped protrusions of the substrate decreases in a stepwise manner toward the outer periphery of the substrate.

また、本発明にかかる半導体装置の接続構造によれば、半導体チップと、この半導体チップを支持し、前記半導体チップの接続電極が下面側に形成されると共に、階段状の突出部分を有する基板とを備え、前記基板外周に向かうにしたがって段階的に突出量が減少するの前記階段状の突出部分は前記基板の外周に向かうにしたがって段階的に突出量が減少するように形成された半導体装置と、前記基板の前記階段状に形成された突出部分に対応してこれを収納する階段状に形成された凹部を有し、その表面に前記突出部分に形成された接続電極と接続される配線パッドを有する配線基板とを備えたことを特徴とする。   According to the semiconductor device connection structure of the present invention, a semiconductor chip, a substrate that supports the semiconductor chip, the connection electrode of the semiconductor chip is formed on the lower surface side, and has a stepped protruding portion; A stepwise protruding portion that decreases in a stepwise manner toward the outer periphery of the substrate; and a semiconductor device formed such that the protruding amount decreases in a stepwise manner toward the outer periphery of the substrate. A wiring pad that has a step-like concave portion that accommodates the stepped portion of the substrate corresponding to the stepped shape and is connected to the connection electrode formed on the surface of the concave portion And a wiring board having the above.

本発明にかかる半導体装置によれば、接続相手の回路基板において制約の少ない配線形成を可能とし、高集積化、高信頼性化が可能な半導体装置を提供することが可能となる。   According to the semiconductor device of the present invention, it is possible to provide a semiconductor device capable of forming wiring with less restrictions on a circuit board to be connected, and capable of high integration and high reliability.

本発明にかかる半導体装置の接続構造によれば、高集積化した半導体装置と、配線形成に制約のない回路基板との高信頼性の接続構造を提供することが可能となる。   According to the connection structure of a semiconductor device according to the present invention, it is possible to provide a highly reliable connection structure between a highly integrated semiconductor device and a circuit board that does not restrict wiring formation.

本発明にかかる半導体装置の実装方法によれば、高集積化した半導体装置を回路基板に高信頼性の接続を行うことが可能な実装方法を提供することが可能となる。   According to the mounting method of a semiconductor device according to the present invention, it is possible to provide a mounting method capable of performing highly reliable connection of a highly integrated semiconductor device to a circuit board.

以下、図面を参照して本発明の実施の形態のいくつかを詳細に説明する。   Hereinafter, some of the embodiments of the present invention will be described in detail with reference to the drawings.

図1は、本発明にかかる半導体装置の一実施例の外観を示す斜視図、図2はその中心を通る断面図である。なお、以下の図面における寸法関係は正確に表されたものではなく、誇張されたものである。   FIG. 1 is a perspective view showing an appearance of an embodiment of a semiconductor device according to the present invention, and FIG. 2 is a cross-sectional view through the center thereof. It should be noted that the dimensional relationships in the following drawings are not expressed accurately but are exaggerated.

半導体チップ1は基板2上に固着されているが、この基板2は最上層の第1層から最下層の第4層までそれぞれ2a、2b、2c、2dで表される4つの層を含む4層構造となっている。この実施例では各層は正方形となっていて相似な平面形状をなしており、これらの中心は一致している。そして、中央に位置する部分が最も下方に突出した突出部となっており、ここから外周部に向かうにしたがって各層の突出量が段階的に減少している。なお、この突出部の位置に関しては、下層が上層の範囲内に含まれる平面位置関係にあり、外周側、すなわち上層側に向かうほど各層の突出量が減少する関係になっていれば良い。例えば、各層の中心が一致している必要は必ずしもない。   The semiconductor chip 1 is fixed on a substrate 2, and the substrate 2 includes four layers represented by 2a, 2b, 2c, and 2d, respectively, from the uppermost first layer to the lowermost fourth layer. It has a layer structure. In this embodiment, each layer is square and has a similar planar shape, and their centers coincide. And the part located in the center becomes the protrusion part which protruded most downward, and the protrusion amount of each layer is reducing in steps as it goes to an outer peripheral part from here. In addition, regarding the position of this protrusion part, it exists in the planar positional relationship in which a lower layer is contained in the range of an upper layer, and the protrusion amount of each layer should just be the relationship which reduces as it goes to the outer peripheral side, ie, the upper layer side. For example, the centers of the layers are not necessarily coincident.

第1層2aの下面周縁部には図2に示すように接続電極3aが形成され、その下面にははんだボール43aが形成されている。同様に第2層2bの下面周縁部には接続電極3bとはんだボール3bが、第3層2cの下面周縁部には接続電極3cとはんだボール4cが、第4層2dの下面には接続電極3dとはんだボール4dが形成されている。   As shown in FIG. 2, a connection electrode 3a is formed on the periphery of the lower surface of the first layer 2a, and a solder ball 43a is formed on the lower surface thereof. Similarly, the connection electrode 3b and the solder ball 3b are disposed on the lower surface periphery of the second layer 2b, the connection electrode 3c and the solder ball 4c are disposed on the lower surface periphery of the third layer 2c, and the connection electrode is disposed on the lower surface of the fourth layer 2d. 3d and solder balls 4d are formed.

図2は積層基板2a〜2d、接続電極3a〜3d、はんだボール4a〜4dとの位置関係が示されており、上層と下層の積層基板の大きさが異なることにより上層側基板の周囲に接続電極およびはんだボールを設けることが可能になっていることがわかる。この図において、この半導体装置の一辺は例えば15mm、一つの積層段の厚さは例えば0.5mmである。   FIG. 2 shows the positional relationship between the laminated substrates 2a to 2d, the connection electrodes 3a to 3d, and the solder balls 4a to 4d, and connection is made around the upper layer side substrate due to the difference in the size of the upper and lower layer laminated substrates. It can be seen that electrodes and solder balls can be provided. In this figure, one side of this semiconductor device is, for example, 15 mm, and the thickness of one stacked stage is, for example, 0.5 mm.

図3は、図1および2に示した半導体装置を回路基板に実装する模様を示す説明図である。ここで用いる半導体装置は図1および2において説明したものと全く同様なものである。   FIG. 3 is an explanatory diagram showing a pattern in which the semiconductor device shown in FIGS. 1 and 2 is mounted on a circuit board. The semiconductor device used here is exactly the same as that described in FIGS.

図3の下側は上側の半導体装置が実装される回路基板の第2層から第4層の部分を示している。したがって、図示された構造の外側に1段高く第1層の回路基板部分が存在する。また、この回路基板については、基板の立体構造と配線を同時に示すため、基板材料を透明なものとして透視的に表している。   The lower side of FIG. 3 shows the second to fourth layer portions of the circuit board on which the upper semiconductor device is mounted. Therefore, the first-layer circuit board portion exists one step higher outside the illustrated structure. Further, for this circuit board, the substrate material is shown as transparent so as to show the three-dimensional structure and wiring of the board at the same time.

この回路基板には、半導体装置の突出部の突出形状に対応した凹部が形成されている。すなわち、ここに示された回路基板は、最上層が第2層11bであり、半導体装置の第2層のはんだボール4bが当接する位置に形成された接続パッド12bとこの接続パッドに接続された配線13bを有している。   The circuit board has a recess corresponding to the protruding shape of the protruding portion of the semiconductor device. That is, in the circuit board shown here, the uppermost layer is the second layer 11b, and the connection pad 12b formed at the position where the solder ball 4b of the second layer of the semiconductor device abuts is connected to this connection pad. It has wiring 13b.

この第2層11bの中央部には矩形状のくぼみ14bが形成され、この中には第3層11cの周縁部が露出しており、さらにその中央部にはくぼみ14cが形成され、その中には最下層である第4層11dの表面が露出している。第3層11cにははんだボール4cに対応して接続パッド12cおよびこれに接続された配線13cが設けられ、同様に第4層11dにははんだボール4dに対応して接続パッド12dおよびこれに接続された配線13dが設けられている。   A rectangular recess 14b is formed in the central portion of the second layer 11b, and the peripheral portion of the third layer 11c is exposed therein, and further, a recess 14c is formed in the central portion thereof. The surface of the lowermost fourth layer 11d is exposed. The third layer 11c is provided with connection pads 12c corresponding to the solder balls 4c and wirings 13c connected thereto. Similarly, the fourth layer 11d is connected to the connection pads 12d corresponding to the solder balls 4d and connected thereto. An interconnected wiring 13d is provided.

この場合、各層の配線には余裕があるため、配線長等の配線ルールの制約を受けることなく任意の方向に単純なルートを確保することができる。   In this case, since there is a margin in the wiring of each layer, a simple route can be secured in an arbitrary direction without being restricted by a wiring rule such as a wiring length.

また、このような回路基板構造を採用することにより、スルーホールを用いることなく接続パッドからの配線引き出しを実現できるため、回路基板の歩留まりを向上させることができるとともに、集積度を向上でき、さらに半導体装置の回路基板への信頼性の高い実装構造を得ることができる。   Also, by adopting such a circuit board structure, it is possible to realize wiring drawing from the connection pads without using through holes, so that the yield of the circuit board can be improved, the degree of integration can be improved, A highly reliable mounting structure of a semiconductor device on a circuit board can be obtained.

さらに、はんだボールは同じ大きさに形成すれば良く、実装時の溶融条件が一定である他、異なる層に設けられたはんだボールは、はんだボール間の距離が広がり、溶融時に短絡を起こす可能性がきわめて低いため、接続の信頼性も高い。   Furthermore, the solder balls need only be formed in the same size, the melting conditions during mounting are constant, and the solder balls provided in different layers have a greater distance between the solder balls and may cause a short circuit during melting. Connection reliability is also high.

また、多層化のため、特に半導体装置の中央部では外部接続端子と多層の距離が広がることになり、電気的信号干渉の発生を低減することが可能となる。   In addition, the multilayer structure increases the distance between the external connection terminal and the multilayer, particularly in the central portion of the semiconductor device, so that the occurrence of electrical signal interference can be reduced.

図4は各層における接続パッドあるいははんだボールと配線の関係の一例を示すもので、裏面側から見た状態を基板材料が透明であるとして透視的に表したものである。   FIG. 4 shows an example of the relationship between the connection pads or solder balls in each layer and the wiring, and shows the state seen from the back side in a transparent manner assuming that the substrate material is transparent.

この図によれば、積層基板11aないし11dに設けられた配線13aないし13dは、半導体装置のはんだボール4aないし4dと接続されている様子が示されている。   According to this figure, it is shown that the wirings 13a to 13d provided on the laminated substrates 11a to 11d are connected to the solder balls 4a to 4d of the semiconductor device.

以上のようにこの実施の形態によれば、基板の外周に向かうにしたがって段階的に突出量が減少するように形成された突出部を有する半導体装置をこの突出部の各層に対応した階段状凹部を有する回路基板に実装することにより、回路基板側でスルーホールが不要となり、また配線ルールの制約のない配線が可能となるため、半導体装置およびその接続構造の高集積化、高信頼性化を図ることができる。   As described above, according to this embodiment, a stepped recess corresponding to each layer of the protruding portion is provided in the semiconductor device having the protruding portion formed so that the protruding amount decreases stepwise toward the outer periphery of the substrate. By mounting on a circuit board that has a wiring board, through holes are not required on the circuit board side, and wiring without restrictions on wiring rules is possible. Therefore, high integration and high reliability of semiconductor devices and their connection structures can be achieved. Can be planned.

図5は本発明にかかる接続構造の他の実施の形態を示す断面図である。   FIG. 5 is a sectional view showing another embodiment of the connection structure according to the present invention.

図5は図3に示されたのとほぼ同様の半導体装置と回路基板が組み合わされた様子を示しているが、図3と異なる点は図3に示された半導体装置の最も先端の層2dの一部にさらにもう1層の基板2eが追加され、この部分に形成されたはんだボール4eが設けられている点である。このような半導体基板に対応して基板も配線層が1つ多くなって5層の配線構造となっている。   FIG. 5 shows a state in which a semiconductor device and a circuit board that are substantially the same as those shown in FIG. 3 are combined. The difference from FIG. 3 is that the topmost layer 2d of the semiconductor device shown in FIG. Further, another layer of the substrate 2e is added to a part of this part, and a solder ball 4e formed in this part is provided. Corresponding to such a semiconductor substrate, the substrate also has one wiring layer and has a five-layer wiring structure.

すなわち、第4図と同様の表示を行った図6を参照すると、はんだボール4eは基板の第6層に形成された配線13eと接続されていることが分かる。この場合も配線13eは回路基板の中央部から他のパッドや配線ルールの制約なしに直線状に形成することができる。   That is, referring to FIG. 6 in which the same display as in FIG. 4 is performed, it can be seen that the solder ball 4e is connected to the wiring 13e formed on the sixth layer of the substrate. Also in this case, the wiring 13e can be formed in a straight line from the center of the circuit board without restriction of other pads or wiring rules.

図3から図6までに説明した半導体装置の実装構造では、半導体装置の突出部をこれに対応した回路基板の凹部に半導体装置の接続電極およびはんだボールを回路基板上の対応接続パッドと一致するように載置し、加熱雰囲気ではんだボールを溶融させて接続電極と接続パッドとを固着させる。このとき、半導体装置が浮き上がらないように適当な押さえ治具を用いることができる。   In the semiconductor device mounting structure described with reference to FIGS. 3 to 6, the protruding portion of the semiconductor device corresponds to the concave portion of the circuit board corresponding thereto, and the connection electrodes and solder balls of the semiconductor device match the corresponding connection pads on the circuit board. The solder balls are melted in a heating atmosphere to fix the connection electrodes and the connection pads. At this time, an appropriate holding jig can be used so that the semiconductor device does not float.

図7は本発明にかかる接続構造の他の実施の形態を示す断面図である。   FIG. 7 is a sectional view showing another embodiment of the connection structure according to the present invention.

この接続構造は図5に示した実施の形態と類似しているが、図5では回路基板の最上層11aのくぼみ中に半導体装置の第1層基板2aが埋め込まれるようになっているが、図7に示した実施の形態では、半導体装置の第1層基板2aは図5の場合よりも大きく、その周囲部は回路基板の第1層11aの上に載置されている。   Although this connection structure is similar to the embodiment shown in FIG. 5, in FIG. 5, the first layer substrate 2a of the semiconductor device is embedded in the recess of the uppermost layer 11a of the circuit substrate. In the embodiment shown in FIG. 7, the first layer substrate 2a of the semiconductor device is larger than the case of FIG. 5, and its peripheral portion is placed on the first layer 11a of the circuit substrate.

さらに、半導体装置の第1層基板2aの周囲部は、ねじ5により回路基板の第1層11aの周囲部に締結される。このため、回路基板側にはねじ孔が形成されており、ねじ5を締めることにより、半導体装置を回路基板に強固に固定できる。   Further, the peripheral portion of the first layer substrate 2 a of the semiconductor device is fastened to the peripheral portion of the first layer 11 a of the circuit substrate by screws 5. For this reason, screw holes are formed on the circuit board side, and the semiconductor device can be firmly fixed to the circuit board by tightening the screws 5.

この接続構造において、ねじ5を締めた状態ではんだを溶融させ接続を行うようにしても良いが、接続部におけるはんだの溶融を行わず、ねじ5により半導体装置を着脱自在としても良い。このように着脱自在とすることにより、試作品の評価時、製品の仕様変更に伴う外部接続端子のレイアウト変更時などに効率的に対処することができる。   In this connection structure, the connection may be performed by melting the solder while the screw 5 is tightened, but the semiconductor device may be detachable by the screw 5 without melting the solder at the connection portion. By being detachable as described above, it is possible to efficiently cope with the evaluation of the prototype, the layout change of the external connection terminals accompanying the product specification change, and the like.

図7において、回路基板11fの配線13e上には弾性的な接続を行う弾性パッド14が設けられている。この弾性的接続パッドはばね等を用いる構造であっても、例えば導電性シリコンゴムなどの弾性材料を用いるものであっても良い。   In FIG. 7, an elastic pad 14 for elastic connection is provided on the wiring 13e of the circuit board 11f. The elastic connection pad may have a structure using a spring or the like, or may use an elastic material such as conductive silicone rubber.

このような弾性的接続パッドはこの図の場合のように、最中央部で接続状態の確認が不可能な場所であっても、信頼性の高い接続が可能である。   Such an elastic connection pad can be connected with high reliability even in a place where the connection state cannot be confirmed at the center as in the case of FIG.

本発明にかかる半導体装置の一実施例の外観を示す斜視図である。It is a perspective view which shows the external appearance of one Example of the semiconductor device concerning this invention. 図1に示す半導体装置の断面図である。It is sectional drawing of the semiconductor device shown in FIG. 図1に示す半導体装置をこれと係合する回路基板に実装する様子を示す斜視図である。It is a perspective view which shows a mode that the semiconductor device shown in FIG. 1 is mounted in the circuit board engaged with this. 各層における接続パッドあるいははんだボールと配線の関係の一例を裏面から透視的に示す図である。It is a figure which shows perspectively an example of the relationship between the connection pad or solder ball in each layer, and wiring from the back surface. 本発明にかかる接続構造の他の実施の形態を示す断面図である。It is sectional drawing which shows other embodiment of the connection structure concerning this invention. 各層における接続パッドあるいははんだボールと配線の関係の一例を裏面から透視的に示す図である。It is a figure which shows perspectively an example of the relationship between the connection pad or solder ball in each layer, and wiring from the back surface. 本発明にかかる接続構造のさらに他の実施の形態を示す断面図である。It is sectional drawing which shows other embodiment of the connection structure concerning this invention.

符号の説明Explanation of symbols

1 半導体素子、
2a、2b,2c,2d,2e 半導体装置基板、
3a,3b,3c,3d 接続電極
4a,4b,4c,4d はんだボール
11a,11b,11c,11d,11e,11f 回路基板層
12a,12b,12c,12d 接続パッド
13a,13b,13c,13d 配線
14 弾性パッド
1 Semiconductor element,
2a, 2b, 2c, 2d, 2e semiconductor device substrate,
3a, 3b, 3c, 3d Connection electrodes 4a, 4b, 4c, 4d Solder balls 11a, 11b, 11c, 11d, 11e, 11f Circuit board layers 12a, 12b, 12c, 12d Connection pads 13a, 13b, 13c, 13d Wiring 14 Elastic pad

Claims (5)

半導体チップと、
この半導体チップを支持し、前記半導体チップの接続電極が下面側に形成されると共に、階段状の突出部分を有する基板とを備え、
前記基板の前記階段状の突出部分は前記基板の外周に向かうにしたがって段階的に突出量が減少することを特徴とする半導体装置。
A semiconductor chip;
The semiconductor chip is supported, and the connection electrode of the semiconductor chip is formed on the lower surface side, and includes a substrate having a stepped protruding portion,
The semiconductor device according to claim 1, wherein the protruding amount of the stepped protruding portion of the substrate decreases stepwise toward the outer periphery of the substrate.
前記基板に設けられた最内側の突出部分とその周囲の段階的に突出量が減少する突出部分とは相似の矩形形状をなすことを特徴とする請求項1に記載の半導体装置。   2. The semiconductor device according to claim 1, wherein an innermost protruding portion provided on the substrate and a protruding portion around which the protruding amount decreases in a stepwise manner have a similar rectangular shape. 前記接続電極にははんだボールが形成されたことを特徴とする請求項1に記載の半導体装置。   The semiconductor device according to claim 1, wherein solder balls are formed on the connection electrodes. 半導体チップと、この半導体チップを支持し、前記半導体チップの接続電極が下面側に形成されると共に、階段状の突出部分を有する基板とを備え、前記基板の前記階段状の突出部分は外周に向かうにしたがって段階的に突出量が減少するように形成された半導体装置と、
前記基板の前記階段状に形成された突出部分を収納する階段状に形成された凹部を有し、その表面に前記突出部分に形成された接続電極と接続される配線パッドを有する配線基板と、
を備えた半導体装置の接続構造。
A semiconductor chip and a substrate supporting the semiconductor chip, the connection electrode of the semiconductor chip being formed on the lower surface side, and a substrate having a stepped protruding portion, the stepped protruding portion of the substrate on the outer periphery A semiconductor device formed so that the protruding amount decreases stepwise as it goes,
A wiring board having a recess formed in a step shape for accommodating the protruding portion formed in the step shape of the substrate, and having a wiring pad connected to a connection electrode formed in the protruding portion on the surface thereof;
Semiconductor device connection structure comprising:
前記基板と前記配線基板とはねじにより締結されることを特徴とする請求項4に記載の半導体装置の接続構造。   The semiconductor device connection structure according to claim 4, wherein the substrate and the wiring substrate are fastened by screws.
JP2004241319A 2004-08-20 2004-08-20 Semiconductor device, connection structure thereof, and packaging method thereof Pending JP2006060077A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2244291A1 (en) * 2009-04-20 2010-10-27 Nxp B.V. Multilevel interconnection system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2244291A1 (en) * 2009-04-20 2010-10-27 Nxp B.V. Multilevel interconnection system
WO2010122437A3 (en) * 2009-04-20 2011-05-19 Nxp B.V. Multilevel interconnection system
CN102405525A (en) * 2009-04-20 2012-04-04 Nxp股份有限公司 Multilevel interconnection system
US8888504B2 (en) 2009-04-20 2014-11-18 Nxp B.V. Multilevel interconnection system
CN102405525B (en) * 2009-04-20 2015-04-08 Nxp股份有限公司 Multilevel interconnection system

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