JP2006049571A - Thin-film element, thin-film magnetic head, magnetic head device and magnetic disk device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an MR element adjusting an electric resistance value at a fixed value, a thin-film magnetic head, a magnetic head device and a magnetic disk device. <P>SOLUTION: The MR element 30, an electrode film 31 forming a first electrode structure, the electrode film 33 forming a second electrode structure, and a resistor 39 are contained. The first electrode film 31 and the second electrode film 33 constitute a pair of power supply bodies for the MR element 30. The resistor 39 is connected between the first electrode film 31 and the second electrode film 33, and has a phase change section 392 having a phase different from other sections. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a thin film element, a thin film magnetic head, a magnetic head device, a magnetic disk device, and a manufacturing technique thereof.

  Thin film elements (hereinafter referred to as MR elements) are used for magnetic memory elements, magnetic sensors, thin film magnetic heads, and the like. As the MR element, a giant magnetoresistive element (hereinafter referred to as GMR element) using a ferromagnetic tunnel junction film (hereinafter referred to as TMR film) and a spin valve film (hereinafter referred to as SV film) is known. .

  The main use of the MR element is a thin film magnetic head. In the thin film magnetic head, a high sensitivity and high output thin film magnetic head is required to cope with the large capacity and miniaturization of a hard disk drive (HDD). In response to this demand, hard characteristics improvement of the thin film magnetic head is being promoted.

  Current thin-film magnetic heads mainly use SV films, but thin-film magnetic heads using TMR films are expected to have a resistance change rate more than twice that of thin-film magnetic heads using SV films. Because it can be done, its development is also being carried out vigorously.

  The SV film and the TMR film have different head structures due to the difference in the direction in which the sense current flows. Generally, a CIP (Current In Plane) structure is used as a head structure that allows a sense current to flow parallel to the film surface, and a CPP (Current Perpendicular to Plane) structure is used as a head structure that allows a sense current to flow perpendicularly to the film surface (Patent Document 1). Refer to this). Since the CPP structure can use the magnetic shield itself as an electrode, a short circuit (insulation failure) between the magnetic shield and the element, which is a serious problem in narrowing the read gap of the CIP structure, is essentially generated. Absent. Therefore, the CPP structure is very advantageous in increasing the recording density.

  Since the TMR film basically has a CPP structure, the above-described advantages can be obtained. Also in the SV film, in order to secure the advantages of the above-described CPP structure, the CIP structure that has been widely used in the past is being converted to the CPP structure. For example, a multilayer structure such as a specular type or a dual type is an example.

  However, in the CPP structure, for example, when a TMR film is taken as an example, an extremely thin tunnel barrier layer having a thickness of about 1 nm or less is a dominant factor, and the head resistance value is determined. Since the control of the ultrathin tunnel barrier layer is difficult, there is a problem that the head resistance value varies with respect to the target resistance value. The variation in the head resistance value is directly reflected in the variation in the reproduction output characteristics.

The above-described problem occurs not only in the thin film magnetic head but also in other thin film devices using the SV film or the TMR film, for example, a magnetic memory element such as an MRAM, a magnetic sensor, or the like.
JP-A-5-275769

  An object of the present invention is to provide a thin film element, a thin film magnetic head, a magnetic head device, and a magnetic disk device in which the resistance value of the MR element is adjusted to a predetermined value.

  Another object of the present invention is to provide a method for adjusting the resistance value of an MR element to a predetermined value.

  In order to solve the above-described problems, the present invention discloses a thin film element, a thin film magnetic head, a magnetic head device, and a magnetic disk device, as well as a manufacturing method thereof.

1. Thin Film Element The thin film element according to the present invention can be used as a reproducing element in a thin film magnetic head, and can also be applied to a magnetic storage element such as an MRAM, a magnetic sensor, and the like. The present invention discloses three different embodiments of thin film devices.

(1) Thin Film Element According to First Aspect The thin film element according to the first aspect includes a magnetoresistive effect element, a first electrode structure, a second electrode structure, and a resistor. The first electrode structure and the second electrode structure constitute a pair of power feeding bodies for the magnetoresistive effect element. The resistor is made of a metal film or an alloy film, is provided so as to connect the first electrode structure and the second electrode structure, and has a phase change portion that is different in phase from other portions.

  Since the first electrode structure and the second electrode structure constitute a pair of feeders for the MR element, the first electrode structure and the second electrode structure supply a sense current to the MR element. The external magnetic field can be detected as a change in the sense current from the resistance value change in response to the external magnetic field of the MR element. In the present invention, the electrode structure refers to an electrical conductive path formed between a portion (terminal) connected to the outside and the MR element. Specifically, it includes an electrode film adjacent to the MR element, a lead portion extending from the electrode film, a lead electrode film to which one end of the lead portion is connected, and the like.

  Since the resistor has a phase change portion having a phase different from that of the other portion, the combined resistance value seen between the first electrode structure and the second electrode structure is changed in the resistance value generated in the phase change portion. Can be adjusted according to. For this reason, even if the resistance value of the MR element varies in the manufacturing process, the resistance value generated in the phase change portion is adjusted to be seen between the first electrode structure and the second electrode structure. The combined resistance value can be adjusted to a desired value to correct a problem that occurs in the manufacturing process.

  According to the thin film element according to the first aspect, even if the resistance value of the MR element varies with respect to the target resistance value, by adjusting the area of the phase change portion of the resistor, The resistance value seen between the electrode structure and the second electrode structure can be adjusted to the target value. Therefore, according to the present invention, the conventional problems can be solved reliably.

(2) Thin Film Element According to Second Aspect In the thin film element according to the second aspect, the resistor is a metal oxide film or an alloy oxide film, and the metal oxide film or the alloy oxide film is partially reduced. It differs from the thin film element according to the first embodiment in that it has a reducing portion obtained in this way. Other structural requirements are common to the thin film element according to the first aspect.

  In order to generate the reduced portion, the resistor is irradiated with a laser, for example. Thereby, the part which received the irradiation of a laser is reduce | restored and metallized, and a reduced part arises. Therefore, by adjusting the relative ratio of the reduced portion to the oxidized portion that has not undergone reduction, the combined resistance value seen between the first electrode structure and the second electrode structure is adjusted to a desired value. Can do.

(3) Thin Film Element According to Third Aspect The thin film element according to the third aspect is obtained by partially oxidizing the metal film or the alloy film, wherein the resistor is a metal film or an alloy film. It differs from the thin film element according to the first and second aspects in that it has an oxidized portion. Other constituent elements are the same as those of the thin film element according to the first and second aspects.

  In order to generate the oxidized portion, the resistor is irradiated with a laser, for example. As a result, the portion irradiated with the laser is oxidized, and a high-resistance oxidized portion is generated. Therefore, by adjusting the relative area ratio of the oxidized portion to the non-oxidized portion, the combined resistance value seen between the first electrode structure and the second electrode structure can be adjusted to a desired value. Can do.

2. Thin Film Magnetic Head The present invention discloses four different aspects of the thin film magnetic head.

(1) Thin-film magnetic head according to the first aspect The thin-film magnetic head according to the first aspect uses the above-described thin-film element according to the present invention as a reproducing element. Of course, as a basic configuration of the thin film magnetic head, a recording element and a slider must be provided in addition to the reproducing element. The recording element is provided at a position overlapping the reproducing element. The slider supports the reproducing element and the recording element.

  In the thin film magnetic head according to the first aspect, the thin film element according to the present invention is used as a reproducing element.

(2) Thin Film Magnetic Head According to Second Aspect The thin film magnetic head according to the second aspect includes a reproducing element, a slider, a first terminal, a second terminal, and a resistor. The slider supports the reproducing element. The first terminal and the second terminal constitute a pair of power feeding bodies for the reproducing element, and one ends of the first terminal and the second terminal are led out to the surface of the slider at a distance from each other.

  The resistor is made of a metal film or an alloy film, and is provided between the first terminal and the second terminal on the surface of the slider, and has a phase change portion that is different in phase from other portions.

  The first terminal and the second terminal constitute a so-called bump and constitute a pair of power feeding bodies for the reproducing element. Therefore, a sense current is supplied to the reproducing element by the first terminal and the second terminal. The external magnetic field can be detected as a change in the sense current from the change in resistance value that is supplied and responds to the external magnetic field of the reproducing element.

  Since the resistor is connected between the first terminal and the second terminal, the resistance value seen between the first terminal and the second terminal is the resistance value of the MR element constituting the reproducing element. And the combined resistance value of the resistors.

  Since the resistor has a phase change portion that is different in phase from the other portions, the combined resistance value seen between the first terminal and the second terminal is adjusted according to the change in the resistance value generated in the phase change portion. can do. For this reason, even if the resistance value of the MR element varies, the combined resistance value seen between the first terminal and the second terminal is adjusted to a desired value by adjusting the resistance value generated in the phase change portion. Can be adjusted to the value.

(3) Thin Film Magnetic Head According to Third Aspect In the thin film magnetic head according to the third aspect, the resistor is a metal oxide film or an alloy oxide film, and the metal oxide film or the alloy oxide film is partially formed. It has a reducing moiety obtained by reduction. Other constituent elements to be provided as the thin film magnetic head are the same as those of the thin film magnetic head according to the second aspect.

  In the case of the thin film magnetic head according to the third aspect, for the resistor, the combined resistance value seen between the first terminal and the second terminal can be obtained by adjusting the relative ratio of the reducing portion to the oxidizing portion. Can be adjusted to the value of.

(4) The thin film magnetic head according to the fourth aspect The thin film magnetic head according to the fourth aspect is obtained by partially oxidizing the metal film or the alloy film, wherein the resistor is a metal film or an alloy film. Having an oxidized portion. Other constituent elements to be provided as the thin film magnetic head are the same as those of the thin film magnetic head according to the second aspect.

  In the thin film magnetic head according to the fourth aspect, the combined resistance value seen between the first terminal and the second terminal is adjusted by adjusting the area relative ratio of the oxidized portion to the non-oxidized portion. It can be adjusted to the desired value.

3. Magnetic Head Device In the present invention, a magnetic head device means a head gimbal assembly (hereinafter referred to as HGA) in which a thin film magnetic head is attached to a gimbal, and a head / arm assembly in which an HGA is attached to an arm ( It is a concept including a head arm assembly (hereinafter referred to as HAA) and a head stack assembly (hereinafter referred to as HSA) in which a plurality of HAAs are stacked. In addition, various technical terms such as gimbals, flexures, suspensions, arms, load beams, and base plates are used for the components of the head support device, but at least a load can be applied to the magnetic head. Moreover, any support device that allows pitch motion and roll motion is included in the head support device according to the present invention regardless of the difference in the technical terms used.

(1) Magnetic head device according to the first aspect The magnetic head device according to the first aspect includes the above-described thin film magnetic head according to the present invention and a head support device. The head support device supports the thin film magnetic head.

  Therefore, the magnetic head device according to the present invention can share all the advantages of the thin film magnetic head described above.

(2) Magnetic Head Device According to Second Aspect The magnetic head device according to the second aspect includes a thin film magnetic head, a head support device, a flexible wiring, and a resistor. The thin film magnetic head includes a reproducing element and a slider, and the slider supports the reproducing element. The head support device supports the thin film magnetic head at one end. The flexible wiring includes two lead conductors and two terminals. Each of the lead conductors has one end connected to the reproducing element and the other end terminated with the terminal. The resistor is connected between the lead conductors or between the terminals.

  In the magnetic head device according to the second aspect, since the resistor is provided between the lead conductors connected to the reproducing element or between the terminals, the resistor is electrically connected to the reproducing element. Enter parallel. For this reason, the resistance value seen between the terminals becomes a composite value of the resistance value of the reproducing element itself and the resistance value of the resistor. Accordingly, even if the resistance value of the reproducing element is different in each magnetic head device, the resistance value of the resistor is selected according to the resistance value of the reproducing element, so that it can be seen between the two terminals. The combined resistance value can be adjusted to a desired value.

  The resistance value of the resistor connected between the two terminals can be set to an appropriate value by the following means.

  The first means measures the resistance value of the reproducing element at any stage of the manufacturing process of the thin film magnetic head, and based on this value, the resistance value seen between the two terminals is different. This is a method of selecting a resistor so that it is always constant.

  The second means is a method of measuring the resistance value of the reproducing element 3 between two terminals after the magnetic head device is completed, and determining the resistance value of the resistor to be connected based on the measured value. is there.

  The third means is to trim the resistor. In this case, the resistor has a resistance value adjusting trimming trace. The combined resistance value seen between the two terminals is adjusted according to the size of the trimming mark with respect to the thickness, width and length of the resistor. For this reason, even if the resistance value of the reproducing element varies, the combined resistance value seen between the two terminals can be adjusted to a desired value by adjusting the size of the trimming mark.

  The fourth means is that the resistor is made of a metal film or an alloy film, and a phase change portion is generated in the resistor. According to this configuration, the combined resistance value seen between the two terminals can be adjusted according to the change in the resistance value generated in the phase change portion.

  The fifth means is that the resistor is made of a metal oxide film or an alloy oxide film to generate a reduced portion. Thereby, by adjusting the relative ratio of the reducing portion to the oxidizing portion, the combined resistance value seen between the two terminals can be adjusted to a desired value.

  The sixth means is that the resistor is made of a metal film or an alloy film, and an oxidized portion obtained by partially oxidizing the metal film or the alloy film is generated. By adjusting the area relative ratio of the oxidized portion to the non-oxidized portion, the combined resistance value seen between the two terminals can be adjusted to a desired value.

4). Magnetic Disk Device A magnetic disk device according to the present invention includes a magnetic head device and a magnetic disk. The magnetic head device is the magnetic head device according to the present invention described above. The magnetic disk is used for writing and reading of magnetic recording in cooperation with the magnetic head device.

5. The present invention further discloses a method of manufacturing a thin film magnetic head belonging to a plurality of embodiments.

(1) Manufacturing Method of Thin Film Magnetic Head According to First Aspect The manufacturing method according to the first aspect is performed on a wafer on which a large number of thin film magnetic heads (thin film magnetic head elements) are arranged. Is executed. The thin film magnetic head includes a reproducing element, a first electrode structure, and a second electrode structure. The first electrode structure and the second electrode structure constitute a pair of power feeding bodies for the reproducing element.

  In the above configuration, first, an electric resistance value of the reproducing element is measured between the first electrode structure and the second electrode structure. The electrical resistance is preferably measured in a magnetic field.

  Thereafter, a resistor having a value selected based on the measured value is electrically connected in parallel to the reproducing element. Thereby, the combined resistance value seen between the first electrode structure and the second electrode structure can be adjusted to a predetermined value.

  By the way, in order to take out an individual thin film magnetic head from a wafer, a bar-like assembly is cut out from the wafer, and further, a surface to be an air bearing surface (hereinafter referred to as ABS) of the bar-like assembly is polished to produce a reproducing element Adjust the height of the MR elements contained in, and then divide them into individual parts. By the height adjustment described above, the area of the MR element constituting the reproducing element is reduced, and the resistance value thereof is increased.

  In the method for manufacturing a thin film magnetic head according to the first aspect, the measurement of the electric resistance value of the MR element included in the reproducing element is executed before the height adjustment. Therefore, it is necessary to determine the resistance value of the resistor based on the resistance value of the MR element in which the increase due to the height adjustment is estimated.

  By including the above processing, the combined resistance value seen between the first terminal and the second terminal can be accurately matched with a predetermined value (theoretically no error).

There are various timings at which the resistor having a value selected based on the measured value is electrically connected in parallel to the MR element constituting the reproducing element. An example is as follows.
(A) The resistor is disposed between the first electrode structure and the second electrode structure.
(B) In a completed thin film magnetic head, a resistor is provided between the other ends (bumps) provided on the slider.
(C) At the HGA stage, a resistor is connected between the lead conductors or terminals of the flexible wiring.

(2) Manufacturing method of thin film magnetic head according to second aspect In the manufacturing method according to the second aspect, a resistor is connected between the first electrode structure and the second electrode structure, and laser irradiation is performed. Adjust the resistance value. Specifically, first, a resistor made of a metal film or an alloy film is formed between a first electrode structure and a second electrode structure that constitute a pair of feeders for the reproducing element. Next, the resistor is irradiated with a laser to cause a partial phase change in the metal film or the alloy film to adjust the resistance value.

  Through the above steps, the combined resistance value seen between the first electrode structure and the second electrode structure can be adjusted according to the change in resistance value generated in the phase change portion. For this reason, even if the resistance value of the MR element constituting the reproducing element varies, the resistance value generated in the phase change portion is adjusted to adjust the resistance value between the first electrode structure and the second electrode structure. The resultant combined resistance value can be adjusted to a desired value.

(3) Manufacturing Method of Thin Film Magnetic Head According to Third Aspect The manufacturing method according to the third aspect is the same as the manufacturing method according to the third aspect in that the resistance value is adjusted by irradiating the resistor with laser. Although common, the resistor is made of a metal oxide film or an alloy oxide film, and is characterized in that the resistance value is adjusted by irradiating the resistor with a laser to generate a reduced portion.

(4) Thin Film Magnetic Head Manufacturing Method According to Fourth Aspect The manufacturing method according to the fourth aspect also relates to the second and third aspects in that the resistance value is adjusted by irradiating the resistor with laser. Although common to the manufacturing method, the resistor is made of a metal film or an alloy film, and is characterized in that the resistance is adjusted by irradiating the resistor with a laser to generate an oxidized portion.

(5) Manufacturing Method of Thin Film Magnetic Head According to Fifth Aspect In the manufacturing method according to the fifth aspect, the thin film magnetic head includes a reproducing element, a first terminal, and a second terminal. The reproducing element is covered with a protective film. The first terminal and the second terminal constitute a pair of power feeding bodies for the reproducing element, and one ends of the first terminal and the second terminal are led to the surface of the protective film with a space therebetween.

  In the above configuration, an electrical resistance value of the reproducing element is measured between the first terminal and the second terminal, and then a resistor having a value selected based on the measured value is used as the reproducing element. Electrically connected to the element in parallel.

  By including the above process, the electrical resistance value of the reproducing element can be measured. Therefore, even if the resistance value of the MR element that constitutes the reproducing element varies, it is between the first terminal and the second terminal. It is possible to accurately match the combined resistance value seen in (1) with a predetermined value (theoretically no error).

  A resistor having a value selected based on the measured value is connected between the first terminal and the second terminal provided in the thin film magnetic head, or at the HGA stage, the flexible wiring Connect between lead conductors or terminals.

(6) Manufacturing Method of Thin Film Magnetic Head According to Sixth Aspect In the manufacturing method according to the sixth aspect, the main process is on a wafer provided with a large number of thin film magnetic heads (thin film magnetic head elements) aligned. The resistor is made of a metal film or an alloy film, and the resistor is irradiated with a laser to cause a phase change, in common with the manufacturing method according to the fifth aspect. It is characterized by adjusting the resistance.

(7) Manufacturing Method of Thin Film Magnetic Head According to Seventh Aspect In the manufacturing method according to the seventh aspect, the main process is executed on a wafer on which a large number of thin film magnetic head elements are arranged. The characteristic point is that the resistor is composed of a metal oxide film or an alloy oxide film, and is reduced by irradiating the resistor with a laser to adjust the resistance value.

(8) Manufacturing Method of Thin Film Magnetic Head According to Eighth Mode In the manufacturing method according to the eighth mode, the main process is executed on a wafer on which a large number of thin film magnetic head elements are arranged. The characteristic point is that the resistor is composed of a metal film or an alloy film, and the resistor is irradiated with a laser to be oxidized to adjust the resistance value.

  In the manufacturing methods according to the fifth to eighth aspects, it has been described on the assumption that the electrical resistance measurement and resistance adjustment process of the reproducing element is performed on the wafer. When the electrical resistance is measured or adjusted on the wafer, as described above, the resistance value must be determined on the basis of the resistance value of the MR element in which the rise due to the height adjustment is estimated.

  Therefore, the processes according to the fifth to eighth aspects are executed on the bar-shaped aggregate after height adjustment. In this case, since the resistance value of the resistor can be determined with reference to the measured resistance value itself, the resistance value can be adjusted with high accuracy.

6). The present invention further discloses a method of manufacturing a magnetic head device.

(1) Manufacturing method of magnetic head device according to first aspect A magnetic head device to which the present invention is applied includes a thin film magnetic head, a head support device, and a flexible wiring. The thin film magnetic head includes a reproducing element and a slider. The slider supports the reproducing element. The head support device supports the thin film magnetic head at one end. The flexible wiring includes two lead conductors and two terminals. Each of the lead conductors has one end connected to the reproducing element and the other end terminated with the terminal.

  In the above configuration, the electrical resistance value of the reproducing element is measured in advance, and then a resistor having a value selected based on the measured value is connected between the lead conductors or between the terminals. The electrical resistance is preferably measured in a magnetic field.

  By including the above process, the electrical resistance value of the reproducing element can be accurately measured. Therefore, even if the resistance value of the MR element constituting the reproducing element varies, the synthesis seen between the terminals of the flexible wiring The resistance value can be accurately adjusted to a predetermined value (theoretically no error). In the case of the magnetic head device, since the height adjustment of the MR element included in the reproducing element has already been completed, the resistance value of the resistor is determined based on the electric resistance value itself obtained by measurement. Can do. This point is similarly applied to the following embodiments.

(2) Manufacturing method of magnetic head device according to second aspect Also in the manufacturing method according to the second aspect, the magnetic head device includes a thin film magnetic head, a head support device, and a flexible wiring. The thin film magnetic head includes a reproducing element and a slider. The slider supports the reproducing element. The head support device supports the thin film magnetic head at one end. The flexible wiring includes two lead conductors and two terminals. Each of the lead conductors has one end connected to the reproducing element and the other end terminated with the terminal.

  In the above configuration, a resistor made of a metal film or an alloy film is formed between the lead conductors or the terminals, and then the resistor is irradiated with a laser so that the metal film or the alloy film is partially The resistance value is adjusted.

  According to the above process, the resistor is partially removed (trimmed), and the combined resistance value seen between the two terminals is adjusted by the size of the trimming mark with respect to the thickness, width and length of the resistor. For this reason, even if the resistance value of the reproducing element varies, the combined resistance value seen between the two terminals can be adjusted to a desired value by adjusting the size of the trimming mark.

(3) Manufacturing method of magnetic head device according to third aspect Also in the manufacturing method according to the third aspect, the magnetic head device includes a thin film magnetic head, a head support device, and a flexible wiring. The thin film magnetic head includes a reproducing element and a slider. The slider supports the reproducing element. The head support device supports the thin film magnetic head at one end. The flexible wiring includes two lead conductors and two terminals. Each of the lead conductors has one end connected to the reproducing element and the other end terminated with the terminal.

  In the above configuration, a resistor made of a metal film or an alloy film is formed between the lead conductors or between the terminals, and then, the resistor is irradiated with a laser so that the metal film or the alloy film is partially Phase change is caused and the resistance value is adjusted.

(4) Manufacturing method of magnetic head device according to fourth aspect Also in the manufacturing method according to the fourth aspect, the magnetic head device includes a thin film magnetic head, a head support device, and a flexible wiring. The thin film magnetic head includes a reproducing element and a slider. The slider supports the reproducing element. The head support device supports the thin film magnetic head at one end. The flexible wiring includes two lead conductors and two terminals. Each of the lead conductors has one end connected to the reproducing element and the other end terminated with the terminal.

  In the magnetic head device configured as described above, a resistor made of a metal oxide film or an alloy oxide film is formed between the lead conductors or between the terminals, and then the resistor is irradiated with a laser to form the metal oxide film Alternatively, a reduced portion is partially generated in the alloy oxide film to adjust the resistance value.

(5) Manufacturing method of magnetic head device according to fifth aspect Also in the manufacturing method according to the fifth aspect, the magnetic head device includes a thin film magnetic head, a head support device, and a flexible wiring. The thin film magnetic head includes a reproducing element and a slider. The slider supports the reproducing element. The head support device supports the thin film magnetic head at one end. The flexible wiring includes two lead conductors and two terminals. Each of the lead conductors has one end connected to the reproducing element and the other end terminated with the terminal.

  In the above configuration, a resistor made of a metal film or an alloy film is formed between the lead conductors or between the terminals, and then the resistor is irradiated with a laser to partially apply the metal film or the alloy film. Then, an oxidized portion is formed, and the resistance value is adjusted.

  Other objects, configurations and advantages of the present invention will be described in more detail with reference to the accompanying drawings. The accompanying drawings are merely examples.

1. Thin Film Element The thin film element according to the present invention can be used as a reproducing element in a thin film magnetic head, and can also be applied to a magnetic storage element such as an MRAM, a magnetic sensor, and the like. The present invention discloses three different embodiments of thin film devices.

(1) Thin Film Element According to First Aspect FIG. 1 is a plan view of an MR element according to the first aspect, and FIG. 2 is a cross-sectional view taken along line 2-2 of FIG. The thin film element according to the first aspect includes an MR element 30, an electrode film 31 that forms a first electrode structure, an electrode film 33 that forms a second electrode structure, and a resistor 39.

  The MR element 30 includes an SV film or a TMR film. An example of an MR element 30 is shown in FIG. Referring to FIG. 2, the MR element 30 has a CPP structure. A CIP structure may be used, but a CPP structure is particularly preferable. This is because, in the CPP structure, the magnetic shield itself can be used as an electrode, so that a short circuit (insulation failure) between the magnetic shield and the element does not essentially occur. The TMR film basically has a CPP structure. The above-described CPP structure can also be adopted in the SV film. Examples include a multilayer structure such as a specular type or a dual type.

  The MR element 30 includes a free layer 302, has a nonmagnetic layer 303 adjacent to the free layer 302, and a pinned layer 304 whose magnetization direction is fixed is adjacent to the nonmagnetic layer 303. An antiferromagnetic layer 305 is adjacent to the pinned layer 304. The pinned layer 304 has its magnetization direction fixed by exchange coupling with the antiferromagnetic layer 305.

For the film structures and composition materials of the free layer 302, the nonmagnetic layer 303, the pinned layer 304, and the antiferromagnetic layer 305, known techniques can be arbitrarily applied. For example, the free layer 302 and the pinned layer 304 are made of, for example, NiFe, NiFeCo, CoFe, or the like, and the antiferromagnetic layer 305 is made of FeMn, MnIr, NiMn, CrMnPt, PtMn, or the like. Nonmagnetic layer 303, if the SV film formed of a conductive material layer mainly composed of Cu or the like, in the case of a TMR film, made of an insulating material layer, such as the Al ₂ O ₃ layer.

  The first electrode film 31 is provided on one surface of the substrate 1 and functions as a lower magnetic shield. A base metal film 306 is formed thinly on one surface of the first electrode film 31, and the MR element 30 is formed thereon.

  The second electrode film 33 is also used as an upper magnetic shield film, and is adjacent to the free layer 302 via the upper metal film 301. The second electrode film 33 is covered with an insulating layer 27.

Magnetic domain control films 35 and 35 are provided on both sides in the width direction of the MR element 30. The magnetic domain control films 35 and 35 control the magnetic domain of the free layer 302. The magnetic domain control films 35 and 35 are electrically exposed from the MR element 30 by insulating films 37 and 37. The insulating films 37 and 37 are made of an oxide insulator and are in contact with the MR film 30. Specifically, the insulating films 37 and 37 are made of an oxide insulating material such as Al ₂ O ₃ or SiO ₂ .

  The MR element described above includes the MR element 30, the first electrode film 31 and the second electrode film 33, and each of the first electrode film 31 and the second electrode film 33 includes the MR element 30. Adjacent to both sides. Therefore, an MR element that allows a sense current to flow in a direction perpendicular to the film surface of the MR element 30 can be obtained.

  The SV film or TMR film having the CPP structure includes at least one free layer 302, and Barkhausen noise that may be generated in the free layer 302 must be suppressed. The magnetoresistive effect element of the illustrated embodiment includes magnetic domain control films 35, 35. The magnetic domain control films 35, 35 are arranged on both sides in the width direction of the MR element 30 and control the magnetic domain of the free layer 302. .

  The insulating films 37, 37 are layered between the magnetic domain control films 35, 35 and the first electrode film 31 and the second electrode film 33, and completely between the MR element 30. It is formed to block. According to this structure, leakage of the sense current from the first electrode film 31 and the second electrode film 33 and the MR element 30 to the magnetic domain control films 35 and 35 is reliably prevented by the insulating films 37 and 37. Can do. Since the first electrode film 31 and the second electrode film 33 are also used as lower and upper magnetic shield films, magnetic disturbance to the MR element 30 can be avoided.

  In the illustrated embodiment, since the MR element 30 includes an SV film or a TMR film, a thin film element with high sensitivity and high output can be obtained. In particular, when a TMR film is used, a resistance change rate that is twice or more that when an SV film is used can be expected.

  Since the first electrode film 31 and the second electrode film 33 constitute a pair of power feeders for the MR element 30, the first electrode film 31 and the second electrode film 33 cause the MR element 30 to sense current. The external magnetic field can be detected as a change in the sense current from the change in resistance value that is supplied and responds to the external magnetic field of the MR element 30.

  A resistor 39 is connected between the lead portion 311 of the first electrode film 31 and the lead portion 331 of the second electrode film 33. Therefore, the resistance value seen between the lead portion 311 of the first electrode film 31 and the lead portion 331 of the second electrode film 33 is a composite value of the resistance value of the MR element 30 and the resistance value of the resistor 39. .

  The resistor 39 has a phase change portion 392 (see FIG. 1). Therefore, the combined resistance value seen between the lead portion 311 of the first electrode film 31 and the lead portion 331 of the second electrode film 33 can be adjusted according to the change in resistance value generated in the phase change portion 392. it can. For this reason, even if the resistance value of the MR element 30 varies, the combined resistance value seen between the lead portion 311 and the lead portion 331 can be set to a desired value by adjusting the resistance value generated in the phase change portion 392. Can be adjusted to the value.

  In the MR element 30 having the CPP structure, for example, when a TMR film is taken as an example, an extremely thin tunnel barrier layer having a thickness of about 1 nm or less is a dominant factor, and the resistance of the MR element 30 Since the value is determined and it is difficult to control the nonmagnetic layer 303 which is an ultrathin tunnel barrier layer, there is a problem that the resistance value of the MR element 30 varies with respect to the target resistance value.

  According to the thin film element according to the first aspect, even if the resistance value of the MR element 30 varies with respect to the target resistance value, by adjusting the area of the phase change portion 392 of the resistor 39, The combined resistance value seen between the lead portion 311 of the first electrode film 31 and the lead portion 331 of the second electrode film 33 can be matched with the target value. Therefore, according to the present invention, the conventional problems can be solved reliably.

  Specifically, the resistor 39 is made of β-phase Ta to generate an α-phase phase change portion. In order to generate the α phase, the β phase Ta is heated by, for example, irradiating a laser. In this case, the α phase has a bcc structure (body-centered cubic structure) and a specific resistance of 0.10 to 1.50 μΩm. The β phase is tetragonal and has a specific resistance of 1.80 to 2.00 μΩm. Therefore, by adjusting the area ratio of the α phase and the β phase, the combined resistance value seen between the lead portion 311 and the lead portion 331 can be adjusted to a desired value.

  As another aspect, the resistor 39 may be mainly composed of GeSbTe or SbTe, and may generate a phase change portion of an amorphous phase or a crystalline phase. In this case, the resistor 39 having the crystal phase as a main component is heated, for example, by irradiating a laser, and then rapidly cooled. Thereby, it becomes a high-resistance amorphous phase. When the amorphous phase is the main component, a strong laser is irradiated. Do not cool quickly. Thereby, a low-resistance crystal phase can be generated.

  By adjusting the area of the amorphous phase or crystal phase obtained by such treatment, the combined resistance value seen between the lead portion 311 of the first electrode film 31 and the lead portion 331 of the second electrode film 33 can be obtained. Can be adjusted to the desired value.

  The material constituting the resistor 39 is not limited to the above-described material, as long as the resistance value is changed by causing a phase change.

(2) Thin Film Element According to Second Aspect The thin film element according to the second aspect is externally the same as that shown in FIG. 1, and will be described with reference to FIG. In the thin film element according to the second aspect, the resistor 39 is formed of a metal oxide film or an alloy oxide film, and has a reduced portion 392 obtained by partially reducing the metal oxide film or the alloy oxide film. , Different from the thin film element according to the first aspect. Other structural requirements are common to the thin film element according to the first aspect.

  In this case, the resistor 39 is irradiated with a laser, for example. As a result, the portion irradiated with the laser is reduced and metallized to produce a reduced portion 392. Therefore, the synthesis seen between the lead portion 311 of the first electrode film 31 and the lead portion 331 of the second electrode film 33 by adjusting the relative area ratio of the reducing portion 392 to the oxidized portion that has not undergone reduction. The resistance value can be adjusted to a desired value.

  As the resistor 39 to be selected in this case, a resistor mainly composed of an oxide of Ag or Pt is suitable. However, the material constituting the resistor 39 is not limited to the above-described material, as long as the resistance value is changed by reduction.

(3) Thin Film Element According to Third Aspect The thin film element according to the third aspect is the same as that shown in FIG. 1 in appearance, and will be described with reference to FIG. The thin film element according to the third aspect is the first in that the resistor 39 is formed of a metal film or an alloy film and has an oxidized portion 392 obtained by partially oxidizing the metal film or the alloy film. , Different from the thin film element according to the second embodiment. Other constituent elements are common to the thin film elements according to the first and second aspects.

  In order to generate the oxidized portion 392, the resistor 39 is irradiated with, for example, a laser. As a result, the portion irradiated with the laser is oxidized, and an oxidized portion 392 is generated. Therefore, by adjusting the relative area ratio of the oxidized portion 392 to the unoxidized portion, the combined resistance seen between the lead portion 311 of the first electrode film 31 and the lead portion 331 of the second electrode film 33 is adjusted. The value can be adjusted to the desired value. An example of the resistor 39 to be selected in this case is one that contains Zn as a main component. However, the material constituting the resistor 39 is not limited to the above-described material, as long as the resistance value is changed by oxidation.

  In the above description, the example in which the resistor is formed between the lead portion 311 and the lead portion 331 has been described, but the resistor is formed between the first electrode structure and the second electrode structure. There are no restrictions on location. For example, it may be formed between the electrode films or between the lead electrode films to which one end of the lead portion is connected, and other combinations are free.

2. Thin Film Magnetic Head The present invention discloses a plurality of different embodiments of thin film magnetic heads.

(1) Thin-film magnetic head according to the first embodiment FIG. 3 is a view of the thin-film magnetic head according to the first embodiment as viewed from the air outflow end side (trailing side). FIG. 4 is an enlarged sectional view showing an electromagnetic conversion portion of the thin film magnetic head shown in FIG. 3, and FIG. 5 is a sectional view taken along line 5-5 in FIG. is there.

  The thin film magnetic head according to the first aspect uses the above-described thin film element according to the present invention (see FIGS. 1 and 2) as the reproducing element 3. Of course, as a basic configuration of the thin film magnetic head, the recording element 2 and the slider 1 must be provided in addition to the reproducing element 3. The recording element 2 is provided at a position overlapping the reproducing element 3. The slider 1 supports the reproducing element 3 and the recording element 2. The details will be described as follows.

  First, the recording element 2 is, for example, an inductive magnetic conversion element, and the writing magnetic pole end faces the ABS and is covered with the protective film 27. The protective film 27 is made of alumina, for example.

  The recording element 2 includes a lower magnetic film 21, an upper magnetic film 22, a recording gap film 24, and a coil film 23. The lower magnetic film 21 has a lower magnetic pole portion 211 at the tip of a yoke portion 210 that constitutes most of the lower magnetic film 21. The upper magnetic film 22 is provided with an upper magnetic pole 222 at the tip of the yoke portion 211. The lower magnetic pole portion 211 and the upper magnetic pole portion 222 are narrowed down so that the write magnetic field is concentrated. The lower magnetic film 21 and the upper magnetic film 22 are magnetically coupled to each other by yokes 210 and 221 by a coupling part 25 on the rear side with respect to the ABS.

The recording gap film 24 is provided between the lower magnetic pole portion 211 and the upper magnetic pole 222. The coil film 23 is disposed in an insulated state in an insulating film 26 in an inner gap generated between the yoke part 210 constituting the lower magnetic film 21 and the yoke part 221 of the upper magnetic film 22. . . Both ends of the coil film 23 are connected to a third terminal 291 and a fourth terminal 292 (see FIG. 3). The recording element 2 is not limited to the above-described embodiment, and the reproducing element 3 that can be widely applied to the recording elements that have been proposed or will be proposed in the past has substantially the stacked structure shown in FIG. The relationship with the recording element 2 is as shown in FIG. That is, an insulating layer 34 made of alumina or the like is widely spread on the second electrode structure 33 constituting the uppermost layer of the reproducing element 3, and the recording element 2 is formed on the insulating film 34. ing.

  Referring to FIG. 3, in the reproducing element 3, a resistor 39 is connected between a lead portion 311 extending from the first electrode film 31 and a lead portion 331 extending from the second electrode film 33. . Furthermore, one end of a lead electrode film 312 is connected to the lead part 311, and one end of a lead electrode film 332 is connected to the lead part 331. The other end of the lead electrode film 312 is connected to the first terminal 313, and the other end of the lead electrode film 332 is connected to the second terminal 333. The first terminal 313 and the second terminal 333 are exposed on the surface 13 (see FIG. 4) of the protective film 27, and a flexible wiring or the like is connected to the surface.

  In the thin film magnetic head according to the first aspect, the thin film element according to the present invention is used as a reproducing element.

(2) Thin Film Magnetic Head According to Second Aspect FIG. 6 is a view of the thin film magnetic head according to the second aspect as seen from the trailing side, omitting the recording element and extracting only the reproducing element portion. FIG. The thin film magnetic head according to the second aspect also includes a reproducing element 3, a recording element 2, a slider 1, a first terminal 313, a second terminal 333, and a resistor 39.

  The reproducing element 3 includes an MR element made of an SV film or a TMR film. The reproducing element 3 need not be the thin film element according to the present invention described above. That is, it is not necessary to have a resistor directly applied to the lead portion 311 and the lead portion 331. The recording element 2 is provided at a position overlapping the reproducing element 3. The slider 1 supports the reproducing element 3 and the recording element 2. The first terminal 313 and the second terminal 333 constitute a pair of power feeding bodies for the reproducing element 3, and one ends of the first terminal 313 and the second terminal 333 are led to the surface of the slider 1 with a space between each other. The details are as shown and described in FIGS.

  The resistor 39 is attached to the surface of the slider 1, specifically, the surface of the protective film 27 constituting the outer surface on the trailing side, and connects the first terminal 313 and the second terminal 333. The resistor 39 is made of a metal film or an alloy film, and has a phase change portion 392 that is different in phase from other portions.

  As described above, since the resistor 39 has the phase change portion 392, the combined resistance value seen between the first terminal 313 and the second terminal 333 is changed to the change in resistance value generated in the phase change portion 392. Can be adjusted accordingly. For this reason, even if the resistance value of the reproducing element 3 varies, the combined resistance value seen between the first terminal 313 and the second terminal 333 is adjusted by adjusting the resistance value generated in the phase change portion 392. Can be adjusted to the desired value.

  Regarding specific examples of materials to be selected as a resistor when generating the phase change portion, specific means for generating the phase change, and the action of the phase change portion, the thin film element according to the first aspect This is as described in the description.

(3) Thin Film Magnetic Head According to Third Aspect The thin film element according to the third aspect is the same as that shown in FIG. 6 in appearance, and will be described with reference to FIG. In the thin film magnetic head according to the third aspect, the resistor 39 is made of a metal oxide film or an alloy oxide film, and has a reduced portion 392 obtained by partially reducing the metal oxide film or the alloy oxide film. , Different from the thin film magnetic head according to the first and second aspects. Other constituent elements are common to the thin film magnetic head according to the first and second aspects.

Specific examples of the material to be selected as the resistor, specific means for causing reduction, action of the reducing portion, and the like are as described in the description of the thin film element according to the second aspect. 4) Thin Film Magnetic Head According to Fourth Aspect The thin film element according to the fourth aspect is also the same as that shown in FIG. 6, and will be described with reference to FIG. In the thin film magnetic head according to the fourth aspect, the resistor 39 is made of a metal film or an alloy film, and has an oxidized portion 392 obtained by partially oxidizing the metal film or the alloy film. Different from the thin film magnetic head according to the third aspect. Other constituent elements are common to the thin film magnetic head according to the second and third aspects.

Specific examples of the material to be selected as the resistor 39, specific means for oxidizing, the action of the oxidized portion, and the like are as described in the description of the thin film element according to the third aspect. Magnetic Head Device In the present invention, the magnetic head device means a head gimbal assembly (hereinafter referred to as HGA) in which a thin film magnetic head is attached to a gimbal, and a head / arm assembly in which an HGA is attached to an arm ( It is a concept including a head arm assembly (hereinafter referred to as HAA) and a head stack assembly (hereinafter referred to as HSA) in which a plurality of HAAs are stacked.

(1) Magnetic Head Device According to First Aspect FIG. 7 is a perspective view showing the configuration of the magnetic head device according to the first aspect, and FIG. 8 is a front view showing a part of the magnetic head device shown in FIG. FIG. 9 is an enlarged view showing a flexible wiring portion of the magnetic head device shown in FIGS. The magnetic head device according to the first aspect includes the above-described thin film magnetic head 4 according to the present invention and a head support device 5. The head support device 5 supports the thin film magnetic head 4.

  The thin film magnetic head 4 shown in FIGS. 3 to 6 is used. As already described with reference to FIGS. 3 to 5, the thin film magnetic head 4 includes the slider 1, the recording element 2, and the reproducing element 3.

  The head support device 5 supports the thin film magnetic head 4 at one end. As shown in an enlarged view in FIG. 8, the head support device 5 attaches a flexible body made of a metal thin plate to a free end at one end in the longitudinal direction of a support body 51 made of a thin metal plate. The thin film magnetic head 4 is attached to the lower surface. Specifically, the flexible body has a tongue-like piece 524 with the tip of the support body 51 as a free end. On the lower surface of the support 51, for example, a hemispherical load projection 525 is provided. The load projection 525 transmits a load force from the free end of the support 51 to the tongue piece 524. The head support device 5 applicable to the present invention is not limited to the above-described embodiments, and the head support device 5 that has been proposed or will be proposed can be widely applied.

  The thin film magnetic head 4 is attached to the lower surface of the tongue-like piece 524 by means such as adhesion, and is supported so that pitch operation and roll operation are allowed.

  The flexible wiring 6 has a connector portion 61 and is disposed along one surface of the head support device 5. A configuration in which a stranded wire is used instead of the flexible wiring 6 and the connector portion 61 is attached to the head support device 5 may be adopted.

  The flexible wiring 6 is generally constituted by what is called a tab tape, and is configured by embedding wiring inside a plastic sheet rich in insulation and flexibility. One end of this wiring is the thin film magnetic head 4. Are connected to the first terminal 313 and the second terminal 333.

  The other end of the wiring embedded in the flexible wiring 6 is guided to the connector portion 61. The connector part 61 is provided on the other end side of the head support device 5 and has a plurality of terminals 611 to 614 on one surface side. The other end of the wiring led to the connector part 61 is connected to the terminals 611 to 614. The terminals 611 and 612 are connected to the reproducing element 3 by lead conductors 615 and 616. Terminals 613 and 614 are also connected to the recording element 2 by lead conductors 617 and 618.

  The head support device 56 applicable to the present invention is not limited to the above-described embodiment, and the head support device 5 that has been proposed or will be proposed can be widely applied. For example, the support body 61 and the tongue-like piece 524 may be integrated using a flexible polymer wiring board such as a tab tape (TAB). Moreover, what has a conventionally well-known gimbal structure can be used freely.

  The thin-film magnetic head 4 has the structure shown in FIGS. 3 to 6, and therefore the magnetic head device shown in FIGS. 7 to 9 has the function and effect described with reference to FIGS. Play.

(2) Magnetic Head Device According to Second Aspect The magnetic head device according to the second aspect shown in FIG. 10 also includes a thin film magnetic head 4, a head support device 5, a flexible wiring 6, and a resistor 39. . The thin film magnetic head 4 includes a reproducing element 3, a recording element 2, and a slider 1. The reproducing element 3 includes an MR element made of an SV film or a TMR film. The recording element 2 is provided at a position overlapping the reproducing element 3. The slider 1 supports the reproducing element 3 and the recording element 2.

  The head support device 5 supports the thin film magnetic head 4 at one end. The connector portion 61 of the flexible wiring 6 is provided on the other end side of the head support device 5 and includes two terminals 611 and 612, and each of the terminals 611 and 612 is connected to the reproducing element 3. This structure is not different from those shown in FIGS. 7 to 9 is different from the illustration of FIG. The resistor 39 is provided between the two terminals 611 and 612. The resistor 39 may be provided between the lead conductors 615 and 616.

  In the magnetic head device according to the second aspect, since the resistor 39 is provided between the two terminals 611 and 612 connected to the reproducing element 3, the resistance value seen between the terminals 611 and 612 is This is a composite value of the resistance value of the reproducing element 3 itself and the resistance value of the resistor 39. For this reason, even if the resistance value of the reproducing element 3 is different in each magnetic head device, by selecting the resistance value between the terminals 611 and 612 in accordance with the resistance value of the reproducing element 3, The combined resistance value seen between the two terminals 611 and 612 can be adjusted to a desired value.

  The resistance value of the resistor 39 connected between the two terminals 611 and 612 can be set to an appropriate value by the following means.

  The first means measures the resistance value of the reproducing element 3 at any stage of the manufacturing process of the thin film magnetic head 4, and based on the measured value, the resistance value seen between the two terminals 611 and 612. However, this is a method of selecting the resistor 39 so as to be always constant between different magnetic head devices.

  The second means measures the resistance value of the reproducing element 3 between the two terminals 611 and 612 after the magnetic head device is completed, and based on the measured value, the resistance value of the resistor 39 to be connected. It is a method to determine. FIG. 11 shows an example in which the resistor 39 is provided by the first and second methods described above.

  A third means is to trim the resistor 39. In this case, as shown in FIG. 12, the resistor 39 has a resistance value adjusting trimming trace 391. The combined resistance value seen between the two terminals 611 and 612 is adjusted by the size of the trimming mark 391 with respect to the thickness, width and length of the resistor 39. For this reason, even if the resistance value of the reproducing element 3 varies, the combined resistance value seen between the two terminals 611 and 612 is adjusted to a desired value by adjusting the size of the trimming mark 391. be able to. Trimming can be performed using a laser.

  As shown in FIG. 13, the fourth means is that the resistor 39 is formed of a metal film or an alloy film, and a phase change portion 392 is generated in the resistor 39. According to this configuration, the combined resistance value seen between the two terminals 611 and 612 can be adjusted according to the change in resistance value generated in the phase change portion 392.

  Regarding specific examples of materials to be selected as a resistor when generating the phase change portion, specific means for generating the phase change, and the action of the phase change portion, the thin film element according to the first aspect This is as described in the description.

  The fifth means is to form the reduced portion 392 obtained by partially reducing the metal oxide film or the alloy oxide film by forming the resistor 39 with a metal oxide film or an alloy oxide film. . In this case, the resistor 39 is irradiated with a laser, for example. As a result, the portion irradiated with the laser is reduced and metallized, and a reduced portion 392 having a low resistance is generated. Therefore, by adjusting the relative ratio of the reduced portion 392 to the oxidized portion that has not undergone reduction, the combined resistance value seen between the two terminals 611 and 612 can be adjusted to a desired value.

  Specific examples of the material to be selected as the resistor when generating the reducing portion, specific means for reduction, and the action of the reducing portion will be described in the description of the thin film element according to the second aspect. That's right.

  A sixth means is that the resistor 39 is made of a metal film or an alloy film, and the metal film or the alloy film is partially oxidized to generate an oxidized portion 392. Specific examples of the material to be selected as the resistor when forming the oxidized portion 392, specific means for oxidation, and the action of the oxidized portion 392 will be described in the description of the thin film element according to the third aspect. As stated.

4). Magnetic Disk Device A magnetic disk device according to the present invention includes a magnetic head device and a magnetic disk. The magnetic head device is the magnetic head device according to the present invention described above. The magnetic disk is used for writing and reading of magnetic recording in cooperation with the magnetic head device.

  FIG. 14 is a perspective view of a magnetic disk device using the magnetic head device shown in FIGS. The illustrated magnetic disk device includes a magnetic disk 71 rotatably provided around a shaft 70, a thin film magnetic head 4, and an assembly carriage device for positioning the thin film magnetic head 4 on a track of the magnetic disk 71. It has.

  The assembly carriage device is mainly composed of a carriage 75 that can be rotated about a shaft 74 and an actuator 76 that is, for example, a voice coil motor (VCM) that drives the carriage 75 to rotate.

  A base portion of a plurality of drive arms 77 stacked in the direction of the shaft 74 is attached to the carriage 75, and a head support device 5 on which the thin film magnetic head 4 is mounted is fixed to the tip portion of each drive arm 77. ing. Each head support device 5 is provided at the distal end portion of the drive arm 77 so that the thin film magnetic head 4 at the distal end portion faces the surface of each magnetic disk 71.

  The head support device 5 and the thin film magnetic head 4 constitute the magnetic head device described with reference to FIGS. Therefore, the magnetic disk device shown in FIG. 14 has the effects described with reference to FIGS.

5. The present invention further discloses a method of manufacturing a thin film magnetic head belonging to a plurality of different modes.

(1) Method for Manufacturing Thin Film Magnetic Head According to First Aspect The method for manufacturing a thin film magnetic head according to the first aspect is characterized in that the main process is immediately after forming the reproducing element 3 (no recording element is formed). ) On the wafer.

  Referring to FIG. 15, a large number of reproducing elements Q1 to Qn are provided on the base 1 in a matrix, for example. Each of the reproducing elements Q1 to Qn includes an MR element 30, a first electrode film 31, and a second electrode film 33, as shown in FIGS. The MR element 30 includes an SV film or a TMR film having a specific film configuration as shown in FIGS. The first electrode film 31 and the second electrode film 33 constitute a pair of power feeding bodies for the MR element 30.

  In the above configuration, first, as shown in FIG. 18, the probes 811 and 812 are applied to the lead portion 311 of the first electrode film 31 and the lead portion 331 of the second electrode film 33, and the first electrode film The electrical resistance value of the MR element 30 is measured by the measuring device 81 between the first electrode film 31 and the second electrode film 33. The electrical resistance is preferably measured in a magnetic field. This measured value may be stored in the measuring device 81 or a computer system connected to the measuring device 81.

  Since the electrical resistance value of the MR element 30 can be accurately measured by including the above process, even if the resistance value of the SV film or the TMR film constituting the reproducing element 3 varies, the first terminal The combined resistance value seen between 313 and the second terminal 333 can be accurately adjusted to a predetermined value.

There are various timings at which the resistor 39 having a value selected based on the measured value is electrically connected to the MR element 30 in parallel. An example is as follows.
(A) The resistor 39 is disposed between the lead portion 311 of the first electrode film 31 and the lead portion 331 of the second electrode film 33. FIG. 19 shows a specific example thereof.
(B) After measuring the electrical resistance value of the MR element 30 between the first electrode film 31 and the second electrode film 33, the thin film magnetic head shown in FIGS. 3 to 5 is completed. In the state of the thin film magnetic head, the reproducing element 3, the recording element 2, the first electrode film 31 and the second electrode film 33 are covered with a protective layer 27, and form a pair of power feeders for the MR element 30. The terminal 313 and the second terminal 333 are led out to the surface of the protective layer 27 at a distance from each other. Therefore, the resistor 39 is provided on the surface of the protective layer 27 so as to connect the first terminal 313 and the second terminal 333.
(C) At the HGA stage, the resistor 39 is connected between the terminals 611 and 612 of the connector portion 61. 10 and 11 show the specific application results. The resistor 39 may be disposed between the lead conductors 615 and 616.

  However, in order to take out the individual thin film magnetic head from the wafer, the bar-like assembly is cut out from the wafer, and the ABS surface of the bar-like assembly is polished to adjust the height of the MR element included in the reproducing element. Then divide it into individual pieces. By the height adjustment described above, the area of the MR element constituting the reproducing element is reduced, and its resistance value is increased.

  In the method of manufacturing the thin film magnetic head described above, the measurement of the electrical resistance value of the MR element 30 included in the reproducing elements Q1 to Qn is executed at the stage of the wafer before height adjustment. Therefore, the resistance value of the resistor 39 needs to be determined on the basis of the resistance value of the MR element 30 estimated by the height adjustment.

(2) Manufacturing Method of Thin Film Magnetic Head According to Second Aspect In the manufacturing method according to the second aspect, the resistor 39 is made of a metal film or an alloy film, and the first electrode film 31 and the second electrode film 33 is provided to connect. In this configuration, as shown in FIG. 20, the laser irradiation means 82 irradiates the resistor 39 with a laser to cause a phase change and adjust the resistance value. In the resistance adjustment process, the probes 811 and 812 are brought into contact with the lead portion 311 of the first electrode film 31 and the lead portion 331 of the second electrode film 33 so that the first electrode film 31 and the second electrode film 33 In the meantime, the electrical resistance value of the MR element 30 is measured by the measuring device 81. The electrical resistance is preferably measured in a magnetic field. This measured value may be stored in the measuring device 81 or a computer system connected to the measuring device 81.

  Through the above steps, the combined resistance value seen between the lead portion 311 of the first electrode film 31 and the lead portion 331 of the second electrode film 33 is determined according to the size of the area of the phase change portion 392. Can be adjusted. Therefore, even if the resistance value of the MR element 30 varies, the combined resistance seen between the first electrode film 31 and the second electrode film 33 by adjusting the resistance value by the phase change portion 392. The value can be adjusted to the desired value.

  Specifically, the resistor 39 is made of β-phase Ta to generate an α-phase phase change portion. In order to generate the α phase, the β phase Ta is heated by, for example, irradiating a laser. In this case, the α phase has a bcc structure (body-centered cubic structure) and a specific resistance of 0.10 to 1.50 μΩm. The β phase is tetragonal and has a specific resistance of 1.80 to 2.00 μΩm. Therefore, by adjusting the area ratio of the α phase and the β phase, the combined resistance value seen between the lead portion 311 of the first electrode film 31 and the lead portion 331 of the second electrode film 33 can be set as desired. Can be adjusted to the value of.

  As another aspect, the resistor 39 is mainly composed of GeSbTe or SbTe, and generates a phase change portion 392 of an amorphous phase or a crystalline phase. When GeSbTe or SbTe constituting the resistor 39 has a crystal phase as a main component, the resistor 39 is heated by, for example, irradiating a laser, and then rapidly cooled. Thereby, it becomes a high-resistance amorphous phase. When the amorphous phase is the main component, a strong laser is irradiated. Do not cool quickly. Thereby, a low-resistance crystal phase can be generated.

  By adjusting the area of the amorphous phase or the crystalline phase obtained by such treatment, the combined resistance seen between the lead portion 311 of the first electrode film 31 and the lead portion 331 of the second electrode film 33. The value can be adjusted to the desired value. Note that the resistor 39 is not limited to the above-described materials because the phase change is caused by laser irradiation or the like and the resistance value is changed.

(3) Manufacturing Method of Thin Film Magnetic Head According to Third Aspect In the manufacturing method according to the third aspect, the resistor 39 is made of a metal oxide film or an alloy oxide film, and as shown in FIG. 39 is irradiated with a laser. Then, a reduced portion 392 obtained by partially reducing the metal oxide film or the alloy oxide film is generated, and the resistance value is adjusted. The point of adjusting the resistance value by irradiating the laser with the laser irradiation means 82, the point of measuring the electric resistance value of the MR element 30 by the measuring device 81, the point of measuring the electric resistance in the magnetic field, etc. are the second mode. This is the same as the manufacturing method.

  According to the above process, the portion irradiated with the laser is reduced and metallized, and a reduced portion 392 having a low resistance is generated. Therefore, by adjusting the relative ratio of the reduced portion 392 to the oxidized portion that has not undergone reduction, it was observed between the lead portion 311 of the first electrode film 31 and the lead portion 331 of the second electrode film 33. The combined resistance value can be adjusted to a desired value.

  As the resistor 39 to be selected in this case, a resistor mainly composed of an oxide of Ag or Pt is suitable. However, the reduced portion is generated by laser irradiation or the like, and the resistance value may be changed.

(4) Manufacturing Method of Thin Film Magnetic Head According to Fourth Aspect The manufacturing method according to the fourth aspect also includes the second and third aspects in that the resistance value is adjusted by irradiating the resistor 39 with a laser. Although the resistor 39 is made of a metal film or an alloy film, as shown in FIG. 20, the resistor 39 is irradiated with a laser to generate an oxidized portion 392. Adjust the resistance value. The point of adjusting the resistance value by irradiating the laser with the laser irradiation means 82, the point of measuring the electric resistance value of the MR element 30 by the measuring device 81, the point of measuring the electric resistance in the magnetic field, etc. This is the same as the manufacturing method.

  According to the above process, the portion irradiated with the laser is oxidized, and the high-resistance oxidized portion 392 is generated. Therefore, by adjusting the relative area ratio of the oxidized portion 392 to the non-oxidized portion, it is seen between the lead portion 311 of the first electrode film 31 and the lead portion 331 of the second electrode film 33. The combined resistance value can be adjusted to a desired value. An example of the resistor 39 to be selected in this case is one that contains Zn as a main component. However, an oxidized portion is generated by laser irradiation or the like, and the resistance value may be changed. Therefore, the material is not limited to the above material.

(5) Manufacturing Method of Thin Film Magnetic Head According to Fifth Aspect In the manufacturing method according to the fifth aspect, as shown in FIG. 21, a wafer provided with a plurality of thin film magnetic head elements Q1 to Qn aligned is provided. To be executed.

  Each of the thin film magnetic head elements Q1 to Qn has the structure shown in FIGS. 4 and 5, for example. 4 and 5, the reproducing element 3, the recording element 2, the first terminal 313, the second terminal 333, the protective film 27, and the resistor 39 are included. The reproducing element 3 includes an MR element made of an SV film or a TMR film. The recording element 2 is provided at a position overlapping the reproducing element 3. The protective film 27 covers the reproducing element 3 and the recording element 2. The first terminal 313 and the second terminal 333 constitute a pair of power feeding bodies for the reproducing element 3, and one ends of the first terminal 313 and the second terminal 333 are led out to the surface of the protective film 27 with a space between each other.

  In the above configuration, as shown in FIG. 22, the probes 811 and 812 are applied to the first terminal 313 and the second terminal 333, and the electric resistance value of the reproducing element 3 is measured by the measuring device 81. Thereafter, the resistor 39 having a value selected based on the measured value is electrically connected to the reproducing element 3 in parallel. FIG. 23 shows an example. The point of measuring the electrical resistance in a magnetic field is the same as that in the manufacturing method according to the second aspect.

  Since the electrical resistance value of the MR element 30 can be accurately measured by including the above process, even if the resistance value of the SV film or the TMR film constituting the reproducing element 3 varies, the first terminal The combined resistance value seen between 313 and the second terminal 333 can be accurately adjusted to a predetermined value.

  As a timing for connecting the resistor 39 having a value selected based on the measured value electrically in parallel to the MR element 30, the resistor 39 is connected to the first terminal 313 and the second terminal 333. The resistor 39 is disposed between the terminals 611 and 612 of the connector portion 61 at the stage of HGA.

  However, in order to take out the individual thin film magnetic head from the wafer, the bar-like assembly is cut out from the wafer, and the ABS surface of the bar-like assembly is polished to adjust the height of the MR element included in the reproducing element. Then divide it into individual pieces. By the height adjustment described above, the area of the MR element constituting the reproducing element 3 is reduced, and the resistance value thereof is increased. Therefore, the resistance value of the resistor 39 needs to be determined on the basis of the resistance value of the MR element 30 estimated by the height adjustment.

(6) Method for Manufacturing Thin Film Magnetic Head According to Sixth Aspect In the manufacturing method according to the sixth aspect, as shown in FIG. 24, an assembly in which a plurality of thin film magnetic head elements Q1 to Qn are provided in alignment is provided. The thin film magnetic head 4 is manufactured by using the method. In short, a resistor 39 is connected between the first terminal 313 and the second terminal 333 in the wafer after the reproducing element 3 and the recording element 2 are manufactured, and the resistance value adjustment by laser irradiation is performed. . Each of the thin film magnetic head elements Q1 to Qn has a structure as shown in FIGS. 4 and 5, for example.

  In the above configuration, the resistor 39 is provided on the surface of the protective film 27 so as to connect the first terminal 313 and the second terminal 333. The resistor 39 is made of a metal film or an alloy film, and the resistor 39 is irradiated with a laser to cause a phase change and adjust the resistance. The point of using the phase change caused by laser irradiation and the details thereof are the same as those in the method of manufacturing the thin film magnetic head according to the third aspect.

  Also in this case, the area of the MR element 30 is reduced by the height adjustment after the wafer is divided, and the resistance value thereof is increased. Therefore, the resistance value of the resistor 39 needs to be determined on the basis of the resistance value of the MR element 30 estimated by the height adjustment.

(7) Method for Manufacturing Thin Film Magnetic Head According to Seventh Aspect The assembly as shown in FIG. 24 is also used in the manufacturing method according to the seventh aspect. The resistor 39 is made of a metal oxide film or an alloy oxide film, and the resistor 39 is irradiated with a laser to be reduced to adjust the resistance value. The point using the reduction reaction by laser irradiation and the details thereof are the same as those in the manufacturing method according to the fourth aspect.

(8) Manufacturing Method of Thin Film Magnetic Head According to Eighth Mode Also in the manufacturing method according to the eighth mode, a method as shown in FIG. 24 is used. The resistor 39 is made of a metal film or an alloy film, and irradiates the resistor 39 with a laser to be oxidized to adjust the resistance value. It is the same as the manufacturing method according to the fifth aspect in that the oxidation action by laser irradiation is used.

(9) Manufacturing Method of Thin Film Magnetic Head According to Ninth Aspect The manufacturing methods according to the first to eighth aspects are executed on a wafer in which thin film magnetic head elements Q1 to Qn are arranged in a matrix. However, it may be performed on a bar-shaped assembly cut from a wafer. An example is shown in FIGS.

  First, as shown in FIG. 25, the substrate 1 constituting the wafer is cut in one direction to obtain a bar-like assembly. Next, as shown in FIG. 26, probes 811 and 812 are applied to the first terminal 313 and the second terminal 333 on the bar-like assembly, and the electric resistance value of the reproducing element 3 is measured by the measuring device 81. taking measurement. Thereafter, as shown in FIG. 27, a resistor 39 having a value selected based on the measured value is electrically connected in parallel to the reproducing element 3.

  Since the electrical resistance value of the MR element 30 can be measured by including the above process, even if the resistance value of the SV film or the TMR film constituting the reproducing element 3 varies, the first terminal 313 and The combined resistance value seen between the second terminals 333 can be set to a predetermined value.

  When using a bar-like assembly, it is preferable to measure the resistance value after finishing the ABS processing and adjusting the height of the MR element. By doing this, the final resistance value of the reproducing element 3 is measured, and the resistance value can be selected based on the measured resistance value. Theoretically, zero error can be realized.

  The timing when the resistor 39 having a value selected based on the measured value is electrically connected in parallel to the MR element 30 is between the first terminal 313 and the second terminal 333. 39 (see FIG. 27), or the resistor 39 is arranged between the terminals 611 and 612 of the connector portion 61 or between the lead conductors 615 and 616 at the stage of the HGA (FIG. 10, FIG. 11).

(10) Method for Manufacturing Thin Film Magnetic Head According to Tenth Embodiment As another embodiment, as shown in FIG. 28, in a bar-like assembly, a resistance is provided between the first terminal 313 and the second terminal 333. The body 39 is connected and the resistance value is adjusted by laser irradiation.
The resistor 39 may be formed of a metal film or an alloy film, and the resistor 39 may be irradiated with a laser to cause a phase change and adjust the resistance. The point of using the phase change caused by laser irradiation and the details thereof are the same as those of the manufacturing method according to the third and seventh aspects. The adjustment of the resistance value is preferably executed after the ABS processing is finished and the height adjustment of the MR element is completed. This is because the resistance value can be adjusted based on the final resistance value of the reproducing element 3 by doing so.

(11) Manufacturing Method of Thin Film Magnetic Head According to Eleventh Aspect As yet another aspect, the resistor 39 is composed of a metal oxide film or an alloy oxide film, and the resistor 39 is irradiated with a laser to reduce the resistance. Adjust the value. The point of using the reduction reaction by laser irradiation and the details thereof are the same as those of the manufacturing method according to the third and seventh aspects.

(12) Manufacturing method of thin film magnetic head according to twelfth aspect As yet another aspect, the resistor 39 is composed of a metal film or an alloy film, and the resistor 39 is irradiated with a laser to be oxidized, and the resistance value is set. You may adjust. In the point which utilizes the oxidation action by laser irradiation, it is common with the manufacturing method which concerns on a 4th aspect and an 8th aspect.

6). The present invention further discloses a method of manufacturing a magnetic head device. This manufacturing method is directed to the realization of the magnetic head device shown in FIGS.

(1) Manufacturing Method of Magnetic Head Device According to First Aspect The manufacturing method according to the first embodiment is directed to manufacturing the magnetic head device shown in FIGS. In manufacturing the magnetic head device, the electrical resistance value of the reproducing element 3 is measured in advance, and then the resistor 39 having a value selected based on the measured value is placed between the two terminals 611 and 612. Connecting. The electric resistance value of the reproducing element 3 can be measured by diverting the method shown in FIGS.

  The resistance value of the resistor 39 connected between the two terminals 611 and 612 can be set to an appropriate value by the following means.

  The first means measures the resistance value of the reproducing element 3 at any stage of the manufacturing process of the thin film magnetic head 4, and based on the measured value, the resistance value seen between the two terminals 611 and 612. However, this is a method of selecting the resistor 39 so as to be always constant between different magnetic head devices.

  The second means measures the resistance value of the reproducing element 3 between the two terminals 611 and 612 after the magnetic head device is completed, and based on the measured value, the resistance value of the resistor 39 to be connected. It is a method to determine. According to the second means, the final resistance value of the reproducing element 3 after the height adjustment is measured, so that the combined resistance value seen between the terminals 611 and 612 is accurately set to a predetermined value. (Theoretically zero error).

(2) Manufacturing Method of Magnetic Head Device According to Second Aspect In the manufacturing method of the magnetic head device according to the second aspect, the resistor 39 is trimmed. Trimming can be performed using a laser. In this case, as shown in FIG. 12, the resistor 39 has a resistance value adjusting trimming trace 391. The combined resistance value seen between the two terminals 611 and 612 is adjusted by the size of the trimming mark 391 with respect to the thickness, width and length of the resistor 39. For this reason, even if the resistance value of the reproducing element 3 varies, the combined resistance value seen between the two terminals 611 and 612 is adjusted to a desired value by adjusting the size of the trimming mark 391. be able to.

(3) Method for Manufacturing Magnetic Head Device According to Third Aspect In the method for manufacturing a magnetic head device according to the third aspect, the resistor 39 is formed of a metal film or an alloy film as shown in FIG. The phase change portion 392 is generated in the resistor 39. According to this configuration, the combined resistance value seen between the two terminals 611 and 612 can be adjusted according to the change in resistance value generated in the phase change portion 392.

  Regarding specific examples of materials to be selected as a resistor when generating the phase change portion, specific means for generating the phase change, and the action of the phase change portion, the thin film element according to the first aspect This is as described in the description.

(4) Magnetic Head Device Manufacturing Method According to Fourth Aspect In the magnetic head device manufacturing method according to the fourth aspect, the resistor 39 is composed of a metal oxide film or an alloy oxide film, and the metal oxide film or A reduced portion 392 obtained by partially reducing the alloy oxide film is generated. In this case, the resistor 39 is irradiated with a laser, for example. As a result, the portion irradiated with the laser is reduced and metallized, and a reduced portion 392 having a low resistance is generated. Therefore, by adjusting the relative ratio of the reduced portion 392 to the oxidized portion that has not undergone reduction, the combined resistance value seen between the two terminals 611 and 612 can be adjusted to a desired value.

  Specific examples of the material to be selected as the resistor when generating the reducing portion, specific means for reduction, and the action of the reducing portion will be described in the description of the thin film element according to the second aspect. That's right.

(5) Magnetic Head Device Manufacturing Method According to Fifth Aspect In the magnetic head device manufacturing method according to the fifth aspect, the resistor 39 is formed of a metal film or an alloy film, and the metal film or the alloy film Is partially oxidized to produce an oxidized portion 392. . Specific examples of the material to be selected as the resistor when forming the oxidized portion 392, specific means for oxidation, and the action of the oxidized portion 392 will be described in the description of the thin film element according to the third aspect. As stated.

  In any of the above-described manufacturing methods of the magnetic head device according to the first to fifth aspects, in any case, the adjustment of the resistance value is executed after the ABS processing is finished and the height adjustment of the MR element is finished. Thus, the resistance value adjustment based on the resistance value of the typical reproducing element 3 is performed. For this reason, the advantage that a highly accurate resistance value adjustment can be performed is acquired.

  Although the contents of the present invention have been specifically described above with reference to the preferred embodiments, it is obvious that those skilled in the art can take various modifications based on the basic technical idea and teachings of the present invention. It is.

It is a top view of MR element concerning the present invention. FIG. 2 is a cross-sectional view taken along line 2-2 in FIG. 1 is a view of a thin film magnetic head according to the present invention as viewed from an air outflow end side (trailing side), in which a recording element is omitted and only a reproducing element portion is extracted and shown. FIG. 4 is an enlarged cross-sectional view showing an electromagnetic conversion portion of the thin film magnetic head shown in FIG. 3. FIG. 5 is a cross-sectional view taken along line 5-5 of FIG. FIG. 10 is a view of still another embodiment of the thin film magnetic head according to the present invention as seen from the trailing side, and shows only the reproducing element portion with the recording element omitted. It is a perspective view which shows the structure of the magnetic head apparatus based on this invention. It is a front view which shows a part of magnetic head apparatus shown in FIG. It is a figure which expands and shows the flexible wiring part of the magnetic head apparatus shown in FIG.7 and FIG.8. It is a perspective view which shows another Example of the magnetic head apparatus based on this invention. It is a figure which expands and shows the flexible wiring part of the magnetic head apparatus shown in FIG. It is a figure which expands and shows the flexible wiring part in another example of the magnetic head apparatus based on this invention. It is a figure which expands and shows the flexible wiring part of the connector in another example of the magnetic head apparatus based on this invention. FIG. 14 is a perspective view of a magnetic disk device using the magnetic head device shown in FIGS. 7 to 13. It is a figure which shows the manufacturing method of the thin film magnetic head which concerns on this invention. FIG. 16 is an enlarged view showing a part of the wafer shown in FIG. 15. FIG. 17 is a cross-sectional view of a reproducing element in the wafer shown in FIGS. 15 and 16. It is a figure which shows the manufacturing method of the thin film magnetic head which concerns on this invention. It is a figure which shows the process after the process shown in FIG. It is a figure which shows another manufacturing method of the thin film magnetic head which concerns on this invention. It is a figure which shows another example of the manufacturing method of the thin film magnetic head which concerns on this invention. FIG. 22 is a diagram showing a step after the step shown in FIG. 21. FIG. 23 is a diagram showing a step after the step shown in FIG. 22. FIG. 23 is a diagram showing a step after the step shown in FIG. 22. It is a figure which shows another example of the manufacturing method of the thin film magnetic head which concerns on this invention. FIG. 26 is a diagram showing a step after the step shown in FIG. 25. FIG. 27 is a diagram showing a step after the step shown in FIG. 26. FIG. 26 is a diagram showing a step after the step shown in FIG. 25.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Base | substrate 30 MR element 31 1st electrode film 33 2nd electrode film 311 1st lead part 331 2nd lead part 39 Resistor 391 Trimming trace 392 Phase change part, reduction | restoration part, or oxidation part

Claims (28)

A thin film element including a magnetoresistive effect element, a first electrode structure, a second electrode structure, and a resistor,
The first electrode structure and the second electrode structure constitute a pair of feeding bodies for the magnetoresistive effect element,
The resistor is made of a metal film or an alloy film, and is provided between the first electrode structure and the second electrode structure, and has a phase change portion different in phase from other portions.
Thin film element. A thin film element including a magnetoresistive effect element, a first electrode structure, a second electrode structure, and a resistor,
The first electrode structure and the second electrode structure constitute a pair of feeding bodies for the magnetoresistive effect element,
The resistor is made of a metal oxide film or an alloy oxide film, and is provided between the first electrode structure and the second electrode structure, and the metal oxide film or the alloy oxide film is partially Having a reducing moiety obtained by reduction,
Thin film element. A thin film element including a magnetoresistive effect element, a first electrode structure, a second electrode structure, and a resistor,
The first electrode structure and the second electrode structure constitute a pair of feeding bodies for the magnetoresistive effect element,
The resistor is made of a metal film or an alloy film, provided between the first electrode structure and the second electrode structure, and obtained by partially oxidizing the metal film or the alloy film. Having an oxidized portion formed,
Thin film element. A thin film magnetic head including a reproducing element and a slider,
The reproducing element is a thin film element according to any one of claims 1 to 3,
The slider supports the reproducing element;
Thin film magnetic head. A thin film magnetic head including a reproducing element, a slider, a first terminal, a second terminal, and a resistor,
The slider supports the reproducing element,
The first terminal and the second terminal constitute a pair of power feeding bodies for the reproducing element, and one ends of the first terminal and the second terminal are led to the surface of the slider with a space between each other,
The resistor is made of a metal film or an alloy film, and is provided between the first terminal and the second terminal on the surface of the slider, and has a phase change portion that is different in phase from other portions.
Thin film magnetic head. A thin film magnetic head including a reproducing element, a slider, a first terminal, a second terminal, and a resistor,
The slider supports the reproducing element,
The first terminal and the second terminal constitute a pair of power feeding bodies for the reproducing element, and one ends of the first terminal and the second terminal are led to the surface of the slider with a space between each other,
The resistor is made of a metal oxide film or an alloy oxide film, and is provided between the first terminal and the second terminal on the surface of the slider, and the metal oxide film or the alloy oxide film is partially provided. Having a reducing moiety obtained by reduction to
Thin film magnetic head. A thin film magnetic head including a reproducing element, a slider, a first terminal, a second terminal, a slider, and a resistor,
The slider supports the reproducing element,
The first terminal and the second terminal constitute a pair of power feeding bodies for the reproducing element, and one ends of the first terminal and the second terminal are led to the surface of the slider with a space between each other,
The resistor is made of a metal film or an alloy film, and is provided between the first terminal and the second terminal on the surface of the slider, and partially oxidizes the metal film or the alloy film. Having the resulting oxidized moiety,
Thin film magnetic head. A magnetic head device including a thin film magnetic head and a head support device,
The thin film magnetic head is the one described in any one of claims 4 to 7,
The head support device supports the thin film magnetic head;
Magnetic head device. A magnetic head device including a thin film magnetic head, a head support device, a flexible wiring, and a resistor,
The thin film magnetic head includes a reproducing element and a slider,
The slider supports the reproducing element,
The head support device supports the thin film magnetic head at one end,
The flexible wiring includes two lead conductors and two terminals, each of the lead conductors having one end connected to the reproducing element and the other end terminated by the terminal.
The resistor is connected between the lead conductors or between the terminals.
Magnetic head device.   The magnetic head device according to claim 9, wherein the resistor has a trimming mark.   10. The magnetic head device according to claim 9, wherein the resistor is made of a metal film or an alloy film and has a phase change portion having a phase different from the others.   10. The magnetic head device according to claim 9, wherein the resistor is a metal oxide film or an alloy oxide film, and a reduced portion obtained by partially reducing the metal oxide film or the alloy oxide film. A magnetic head device.   10. The magnetic head device according to claim 9, wherein the resistor is made of a metal film or an alloy film, and has an oxidized portion obtained by partially oxidizing the metal film or the alloy film. Head device. A magnetic disk device including a magnetic head device and a magnetic disk,
The magnetic head device according to any one of claims 8 to 13,
The magnetic disk device is used for writing and reading of magnetic recording in cooperation with the magnetic head device. A method of manufacturing a thin film magnetic head comprising:
The thin film magnetic head includes a reproducing element, a first electrode structure, and a second electrode structure,
The first electrode structure and the second electrode structure constitute a pair of feeders for the reproducing element,
Between the first electrode structure and the second electrode structure, an electrical resistance value of the reproducing element is measured,
Thereafter, a manufacturing method including a step of electrically connecting a resistor having a value selected based on a measured value to the reproducing element in parallel. The manufacturing method according to claim 15, comprising:
The manufacturing method in which the resistor is formed between the first electrode structure and the second electrode structure. A method of manufacturing a thin film magnetic head comprising:
The thin film magnetic head includes a reproducing element, a first electrode structure, and a second electrode structure,
The first electrode structure and the second electrode structure constitute a pair of feeders for the reproducing element,
Forming a resistor made of a metal film or an alloy film between the first electrode structure and the second electrode structure;
Next, the resistor is irradiated with a laser to cause a phase change partially in the metal film or the alloy film and adjust the resistance value.
A manufacturing method including a process. A method of manufacturing a thin film magnetic head comprising:
The thin film magnetic head includes a reproducing element, a first electrode structure, and a second electrode structure,
The first electrode structure and the second electrode structure constitute a pair of feeders for the reproducing element,
Forming a resistor composed of a metal oxide film or an alloy oxide film between the first electrode structure and the second electrode structure;
Next, the manufacturing method includes a step of adjusting a resistance value by irradiating the resistor with a laser to partially generate a reduced portion in the metal oxide film or the alloy oxide film. A method of manufacturing a thin film magnetic head comprising:
The thin film magnetic head includes a reproducing element, a first electrode structure, and a second electrode structure,
The first electrode structure and the second electrode structure constitute a pair of feeders for the reproducing element,
Forming a resistor made of a metal film or an alloy film between the first electrode structure and the second electrode structure;
Next, the resistor is irradiated with a laser, an oxidized portion is partially generated in the metal film or the alloy film, and the resistance value is adjusted.
A manufacturing method including a process. A method of manufacturing a thin film magnetic head comprising:
The thin film magnetic head includes a reproducing element, a first terminal, and a second terminal,
The reproducing element is covered with a protective film,
The first terminal and the second terminal constitute a pair of power feeding bodies for the reproducing element, and one ends of the first terminal and the second terminal are led out to the surface of the protective film with a space between each other,
Measuring the electrical resistance value of the reproducing element between the first terminal and the second terminal;
Thereafter, a resistor having a value selected based on the measured value is electrically connected in parallel to the reproducing element.
A manufacturing method including a process. A method of manufacturing a thin film magnetic head comprising:
The thin film magnetic head includes a reproducing element, a first terminal, and a second terminal,
The reproducing element is covered with a protective film,
The first terminal and the second terminal constitute a pair of power feeding bodies for the reproducing element, and one ends of the first terminal and the second terminal are led out to the surface of the protective film with a space between each other,
On the surface of the protective film, a resistor made of a metal film or an alloy film is formed between the first terminal and the second terminal,
Next, the resistor is irradiated with a laser, a phase change is caused partially in the metal film or the alloy film, and the resistance value is adjusted.
A manufacturing method including a process. A method of manufacturing a thin film magnetic head comprising:
The thin film magnetic head includes a reproducing element, a first terminal, and a second terminal,
The reproducing element is covered with a protective film,
The first terminal and the second terminal constitute a pair of power feeding bodies for the reproducing element, and one ends of the first terminal and the second terminal are led out to the surface of the protective film with a space between each other,
On the surface of the protective film, a resistor made of a metal oxide film or an alloy oxide film is formed between the first terminal and the second terminal,
Next, the resistor is irradiated with a laser, the metal oxide film or the alloy oxide film is partially reduced, and the resistance value is adjusted.
A manufacturing method including a process. A method of manufacturing a thin film magnetic head comprising:
The thin film magnetic head includes a reproducing element, a first terminal, and a second terminal,
The reproducing element is covered with a protective film,
The first terminal and the second terminal constitute a pair of power feeding bodies for the reproducing element, and one ends of the first terminal and the second terminal are led out to the surface of the protective film with a space between each other,
On the surface of the protective film, a resistor made of a metal film or an alloy film is formed between the first terminal and the second terminal,
Next, the resistor is irradiated with a laser, and the resistance value is adjusted by partially oxidizing the metal film or the alloy film.
A manufacturing method including a process. A method of manufacturing a magnetic head device including a thin film magnetic head, a head support device, and a flexible wiring,
The thin film magnetic head includes a reproducing element and a slider,
The slider supports the reproducing element,
The head support device supports the thin film magnetic head at one end,
The flexible wiring includes two lead conductors and two terminals, each of the lead conductors having one end connected to the reproducing element and the other end terminated by the terminal.
The electrical resistance value of the reproducing element is measured in advance,
Thereafter, a resistor having a value selected based on the measured value is connected between the lead conductors or between the terminals.
A method of manufacturing a magnetic head device including a process. A method of manufacturing a magnetic head device including a thin film magnetic head, a head support device, and a flexible wiring,
The thin film magnetic head includes a reproducing element and a slider,
The slider supports the reproducing element,
The head support device supports the thin film magnetic head at one end,
The flexible wiring includes two lead conductors and two terminals, each of the lead conductors having one end connected to the reproducing element and the other end terminated by the terminal.
A resistor made of a metal film or an alloy film is formed between the lead conductors or the terminals,
Next, the resistor is irradiated with a laser, the metal film or the alloy film is partially removed, and the resistance value is adjusted.
Manufacturing method including processes. A method of manufacturing a magnetic head device including a thin film magnetic head, a head support device, and a flexible wiring,
The thin film magnetic head includes a reproducing element and a slider,
The slider supports the reproducing element,
The head support device supports the thin film magnetic head at one end,
The flexible wiring includes two lead conductors and two terminals, each of the lead conductors having one end connected to the reproducing element and the other end terminated by the terminal.
A resistor made of a metal film or an alloy film is formed between the lead conductors or the terminals,
Next, the resistor is irradiated with a laser to cause a partial phase change in the metal film or the alloy film and adjust the resistance value.
A manufacturing method including a process. A method of manufacturing a magnetic head device including a thin film magnetic head, a head support device, and a flexible wiring,
The thin film magnetic head includes a reproducing element and a slider,
The slider supports the reproducing element,
The head support device supports the thin film magnetic head at one end,
The flexible wiring includes two lead conductors and two terminals, each of the lead conductors having one end connected to the reproducing element and the other end terminated by the terminal.
A resistor made of a metal oxide film or an alloy oxide film is formed between the lead conductors or between the terminals,
Next, the resistor is irradiated with a laser to partially generate a reduced portion in the metal oxide film or the alloy oxide film, and the resistance value is adjusted.
A manufacturing method including a process. A method of manufacturing a magnetic head device including a thin film magnetic head, a head support device, and a flexible wiring,
The thin film magnetic head includes a reproducing element and a slider,
The slider supports the reproducing element,
The head support device supports the thin film magnetic head at one end,
The flexible wiring includes two lead conductors and two terminals, each of the lead conductors having one end connected to the reproducing element and the other end terminated by the terminal.
A resistor made of a metal film or an alloy film is formed between the lead conductors or the terminals,
Next, the resistor is irradiated with a laser to partially generate an oxidized portion in the metal film or the alloy film, and adjust the resistance value.
A manufacturing method including a process.

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