JP2006049564A - Lighting optical device, exposure device, and exposure method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a lighting optical device which can properly correct inclination illuminance irregularities in an irradiation surface without involving side effect such as lowering of illuminance and deterioration of telecentricity of illumination light in accordance with a simple constitution. <P>SOLUTION: The lighting optical device illuminates an irradiation surface (M) by optical flux from a light source (1). It has an aperture diaphragm (9) which is disposed in an illumination pupil surface of thereabout for limiting optical flux. The aperture diaphragm has a first division member and a second division member divided by a prescribed division surface parallel to a surface including an optical axis (AX), for example. A relative position along the optical axis of the first division member and the second division member is constituted variably. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an illumination optical apparatus, an exposure apparatus, and an exposure method. More particularly, the present invention relates to an illumination optical apparatus suitable for an exposure apparatus used for manufacturing a microdevice such as a semiconductor element or a liquid crystal display element in a lithography process.

  For example, a liquid crystal display element as a micro device is manufactured by patterning a transparent thin film electrode into a desired shape on a glass substrate (plate) by a photolithography technique to form a switching element such as a TFT and an electrode wiring. In the manufacturing process of a liquid crystal display element using this photolithography technique, an exposure apparatus that projects and exposes an original pattern formed on a mask onto a plate coated with a photosensitive agent such as a photoresist via a projection optical system. Is used.

  Conventionally, in this type of exposure apparatus, after the relative alignment between the mask and the plate is performed, the pattern on the mask is collectively transferred to one exposure area (shot area) on the plate to transfer the pattern. Later, a system in which the plate is moved stepwise to perform transfer to other exposure areas in sequence, that is, a step-and-repeat system has been frequently used. In recent years, a liquid crystal display element has been required to have a large area, and accordingly, an exposure area used in an photolithography process is desired to be expanded. In order to enlarge the exposure area in the exposure apparatus, for example, there is a method of increasing the size of the projection optical system. However, it is expensive to design and manufacture a large projection optical system in which residual aberrations are reduced as much as possible. .

  Therefore, a step-and-scan method has been proposed in order to expand the exposure area while avoiding an increase in the size of the projection optical system. In a step-and-scan exposure apparatus, a mask is irradiated with slit-shaped illumination light having a length in the longitudinal direction substantially the same as the effective diameter (diameter) on the object side (mask side) of the projection optical system. Then, with the slit-shaped light passing through the mask forming a partial image of the mask pattern on the plate via the projection optical system, the mask and the plate are moved relative to the projection optical system. Then, the mask pattern is subjected to scanning exposure (scan exposure) on one shot area on the plate. Thus, scanning exposure to each shot area is sequentially repeated while stepping the plate.

  In the conventional exposure apparatus, when it is intended to expand the exposure area as described above, it becomes difficult to ensure the illuminance uniformity of the exposure area, and so-called uneven illuminance is likely to occur. Here, for example, illuminance unevenness that occurs substantially symmetrically with respect to the center of the exposure area (hereinafter referred to as “center-symmetric illuminance unevenness”) such that the illuminance at the periphery is lower than the center of the exposure area is controlled by the peripheral NA at the design stage. Can be suppressed.

  However, it is easier to correct so-called tilted illuminance unevenness in which the illuminance unevenness of the peripheral part occurs asymmetrically with respect to the center of the exposure area, for example, the so-called tilted illuminance unevenness such that the illuminance decreases along one direction. is not. Conventionally, in order to correct uneven illuminance, a filter having a required transmittance distribution corresponding to illuminance unevenness is arranged near the entrance surface of the fly-eye integrator in the illumination optical system, or a main capacitor in the illumination optical system. A method of decentering (shifting) the lens in a direction perpendicular to the optical axis or tilting (tilting) the lens with respect to the optical axis is used.

  Here, in the conventional technique using a filter having a required transmittance distribution, a relatively large light amount loss occurs in the filter, and as a result, a decrease in illuminance occurs in the exposure region (irradiated surface), thereby reducing the throughput of the apparatus. There was inconvenience that there was fear. Further, in the conventional technique using the eccentricity or inclination of the main condenser lens, there is a disadvantage that not only the illuminance reduction in the exposure region (irradiated surface) but also the telecentricity of the illumination light is deteriorated.

  The present invention has been made in view of the above-described problems, and in accordance with a simple configuration, the uneven illuminance unevenness on the irradiated surface can be achieved without side effects such as a decrease in illuminance and a deterioration in telecentricity of illumination light. An object of the present invention is to provide an illumination optical device that can be corrected favorably. The present invention also provides an exposure apparatus and an exposure method capable of performing high-accuracy and high-throughput exposure under desired illumination conditions using an illumination optical apparatus that can satisfactorily correct inclination illuminance unevenness. The purpose is to provide.

In order to solve the above problems, in the first embodiment of the present invention, in the illumination optical device that illuminates the illuminated surface with the light beam from the light source,
It has an aperture stop to limit the luminous flux placed on or near the illumination pupil plane,
The aperture stop has a first divided member and a second divided member divided by a predetermined dividing surface,
The illumination optical device is characterized in that the relative position along the optical axis between the first split member and the second split member is variably configured.

  According to a second aspect of the present invention, there is provided an exposure apparatus comprising the illumination optical apparatus according to the first aspect for illuminating a mask, and exposing the pattern of the mask onto a photosensitive substrate.

  According to a third aspect of the present invention, there is provided an exposure method characterized by illuminating a mask using the illumination optical apparatus according to the first aspect and exposing a pattern of the mask onto a photosensitive substrate.

  In the illumination optical apparatus of the present invention, the aperture stop disposed on the illumination pupil plane for limiting the light beam is divided into the first divided member and the second divided member by the predetermined dividing surface, and the first divided member and the second divided member are divided. The relative position along the optical axis with respect to the dividing member is configured to be variable. Therefore, for example, uneven illuminance unevenness along a predetermined direction occurs such that the illuminance at one peripheral portion of the irradiated surface increases and the illuminance at the other peripheral portion decreases according to the moving distance of one split member. .

  That is, in the present invention, for example, according to a simple configuration in which the first divided member or the second divided member is moved by a predetermined distance, side effects such as a decrease in illuminance and a deterioration in telecentricity of illumination light are substantially accompanied. In addition, uneven illumination unevenness on the irradiated surface can be corrected well. Further, in the exposure apparatus and the exposure method of the present invention, since the illumination optical apparatus that can correct the uneven illumination unevenness is used, exposure with high accuracy and high throughput is performed under desired illumination conditions. As a result, a device such as a liquid crystal display element can be manufactured satisfactorily with high throughput.

Embodiments of the present invention will be described with reference to the accompanying drawings.
FIG. 1 is a drawing schematically showing a configuration of an exposure apparatus according to an embodiment of the present invention. In FIG. 1, the Z-axis is along the normal direction of a plate (resist-coated glass substrate) P that is a photosensitive substrate, and the Y-axis is parallel to the plane of FIG. In the plane of the plate P, the X axis is set in a direction perpendicular to the paper surface of FIG.

  The exposure apparatus shown in FIG. 1 includes a light source 1 composed of, for example, an ultrahigh pressure mercury lamp. The light source 1 is positioned at the first focal position of an elliptical mirror 2 having a reflecting surface made of a spheroid. Accordingly, the illumination light beam emitted from the light source 1 is reflected by the reflecting surface of the elliptical mirror 2 and forms a light source image at the second focal position of the elliptical mirror 2 via the bending mirror 3. A shutter 4 is disposed at the second focal position. The divergent light beam from the light source image formed at the second focal position of the elliptical mirror 2 is imaged again via the relay lens system 5.

  In the vicinity of the pupil plane of the relay lens system 5, a wavelength selection filter 6 that transmits only a light beam in a desired wavelength region is disposed. In the wavelength selection filter 6, g-line (436 nm) light, h-line (405 nm), and i-line (365 nm) light are simultaneously selected as exposure light. In the wavelength selection filter 6, for example, g-line light and h-line light can be simultaneously selected, and h-line light and i-line light can be simultaneously selected. You can select only the light.

  The light having the exposure wavelength λ selected through the wavelength selection filter 6 is converted into a substantially parallel light beam by the collimator lens 7 and then enters a fly eye integrator (fly eye lens) 8 as an optical integrator. The fly eye integrator 8 is configured, for example, by arranging a large number of lens elements having a positive refractive power vertically and horizontally and densely so that the optical axes thereof are parallel to the optical axis AX. Each lens element constituting the fly eye integrator 8 has a rectangular cross section similar to the shape of the illumination field to be formed on the mask M (and thus the shape of the exposure region to be formed on the plate P).

  Therefore, the light beam incident on the fly eye integrator 8 is divided into wavefronts by a large number of lens elements, and one light source image is formed on the rear focal plane of each lens element. That is, a substantial surface light source (that is, a secondary light source having a predetermined light intensity) composed of a large number of light source images is formed on the rear focal plane (illumination pupil plane) of the fly eye integrator 8. The light beam from the secondary light source formed on the rear focal plane of the fly-eye integrator 8 is incident on the aperture stop 9 disposed in the vicinity thereof.

  The aperture stop 9 is disposed at a position substantially optically conjugate with the entrance pupil plane of the projection optical system PL, and has a variable aperture for defining a range that contributes to illumination of the secondary light source. The aperture stop 9 changes the aperture diameter of the variable aperture to change the illumination σ value that determines the illumination condition (the aperture of the secondary light source image on the pupil plane relative to the aperture diameter of the pupil plane of the projection optical system). Is set to a desired value. The detailed configuration and operation of the aperture stop 9 will be described later.

  The light from the secondary light source through the aperture stop 9 receives the light condensing action of the condenser optical system (main condenser lens) 10 and then illuminates the mask M on which a predetermined pattern is formed in a superimposed manner. Thus, on the mask M, a rectangular illumination area similar to the cross-sectional shape of each lens element of the fly eye integrator 8 is formed. Note that a mask blind and a blind imaging optical system as a field stop for defining the shape of the illumination area formed on the mask M can be arranged in the optical path between the condenser optical system 10 and the mask M. .

  The mask M is held parallel to the XY plane (that is, the horizontal plane) on the mask stage MS via a mask holder (not shown). The mask stage MS can be moved two-dimensionally along the mask surface (that is, the XY plane) by the action of a mask stage drive system (not shown), and its position coordinates are measured by a mask interferometer (not shown). In addition, the position is controlled.

  The light beam transmitted through the pattern of the mask M forms a rectangular mask pattern image on the plate P through the projection optical system PL. The plate P is held parallel to the XY plane on the plate stage PS via a plate holder (not shown). The plate stage PS can be moved two-dimensionally along the plate surface (ie, the XY plane) by the action of a plate stage drive system (not shown), and its position coordinates are measured by a plate interferometer (not shown) and The position is controlled.

  Thus, by performing projection exposure in a stationary state in which the mask M and the plate P are aligned with respect to the projection optical system PL, the pattern of the mask M is collectively exposed to the shot area (exposure area) of the plate P. In this case, batch exposure is sequentially performed on each shot area of the plate P while stepping the plate P along the XY plane according to the step-and-repeat method.

  Alternatively, by performing projection exposure while moving the mask M and the plate P along the scanning direction (for example, the X direction) with respect to the projection optical system PL, the pattern of the mask M is scanned and exposed on the shot area of the plate P. The In scanning exposure, in one shot area on the plate P, a dimension along the scanning orthogonal direction (direction orthogonal to the scanning direction: for example, Y direction) of the rectangular mask pattern image formed in a stationary state, and the plate P A rectangular pattern defined by the dimension corresponding to the movement distance along the scanning direction is formed. In this case, scanning exposure is sequentially performed on each shot area of the plate P while stepping the plate P along the XY plane according to the step-and-scan method.

  FIG. 2 is a diagram schematically showing the configuration of the aperture stop in the present embodiment. As shown in FIG. 2A, the aperture stop 9 of the present embodiment is constituted by a first divided member 9a and a second divided member 9b divided by an XZ plane including the optical axis AX. As shown in FIG. 2B, the first split member 9a and the second split member 9b are configured to be independently movable along the optical axis AX. In other words, in the aperture stop 9, the relative position along the optical axis AX of the first divided member 9a and the second divided member 9b is configured to be variable.

  Referring to FIG. 3A, the first split member 9a and the second split member 9b constituting the aperture stop 9 are in the normal position, that is, in the vicinity of the exit surface of the fly-eye integrator 8, and a secondary light source is formed. It is arranged at the position of the illumination pupil plane. In this case, when considering the central point P1 intersecting the optical axis AX on the mask M and the points P2 and P3 symmetrical in the Y direction with respect to the central point P1, the numerical aperture NA2 of the incident light flux at the point P2 and the incident at the point P3 In many cases, the numerical aperture NA3 of the light flux is equal to each other, and the numerical aperture NA1 of the light flux incident on the center point P1 is slightly smaller than the numerical apertures NA2 and NA3.

  That is, the illuminance at the peripheral part is slightly higher than the central part of the illumination area on the mask M, and as a result, the illuminance at the peripheral part is slightly higher than the central part of the exposure area on the plate P. There are many. Here, as shown in FIG. 3B, when only the second split member 9b is moved to the mask M side from the normal state shown in FIG. 3A, the numerical aperture NA1 of the incident light beam to the center point P1 is Although not changed, the numerical aperture NA2 ′ of the incident light beam at the point P2 is larger than the numerical aperture NA2 of the incident light beam at the point P2 in the normal state, and the numerical aperture NA3 ′ of the incident light beam at the point P3 is in the normal state. It becomes smaller than the numerical aperture NA3 of the incident light beam at the point P3.

  As a result, in the state shown in FIG. 3B, the illuminance at the point P2 increases and the illuminance at the point P3 decreases in the Y direction according to the moving distance of the second divided member 9b to the mask M side. Inclined illuminance unevenness occurs. Although not shown, when only the first split member 9a is moved to the mask M side from the normal state shown in FIG. 3A, the numerical aperture NA1 of the incident light beam at the center point P1 is unchanged. The numerical aperture NA2 ′ of the incident light beam at the point P2 is smaller than the numerical aperture NA2 of the incident light beam at the point P2 in the normal state, and the numerical aperture NA3 ′ of the incident light beam at the point P3 is incident on the point P3 in the normal state. It becomes larger than the numerical aperture NA3 of the light beam.

  As a result, uneven illuminance unevenness along the Y direction occurs such that the illuminance at the point P2 decreases and the illuminance at the point P3 increases according to the moving distance of the first dividing member 9a to the mask M side. In other words, according to the present embodiment, according to a simple configuration in which the first divided member 9a or the second divided member 9b is moved to the mask M side by a predetermined distance, the illuminance is reduced, the telecentricity of the illumination light is deteriorated, and the like. In the illumination area on the mask M, the uneven illuminance unevenness along the Y direction in the illumination region on the mask M, and thus the uneven uneven illuminance unevenness along the Y direction in the exposure region on the plate P can be corrected satisfactorily. it can.

  Further, generally, by moving at least one of the first divided member 9a and the second divided member 9b by a predetermined distance, in the Y direction in the exposure region on the irradiated surface (mask M and plate P). The uneven illuminance unevenness along can be corrected well. Thus, in the exposure apparatus of the present embodiment, the illumination optical apparatus (1 to 10) that can satisfactorily correct inclination illuminance unevenness is used. Therefore, the exposure apparatus has high accuracy and high throughput under desired illumination conditions. Exposure can be performed.

  In the above description, the aperture stop 9 is constituted by the first divided member 9a and the second divided member 9b divided by the XZ plane including the optical axis AX, but is divided by the YZ plane including the optical axis AX. The aperture stop 9 can also be constituted by the first divided member 9c (not shown) and the second divided member 9d (not shown). In this case, by moving at least one of the first divided member 9c and the second divided member 9d by a predetermined distance, the gradient illuminance along the X direction in the exposure region on the irradiated surface (mask M and plate P) Unevenness can be corrected satisfactorily. More generally, by forming the aperture stop 9 by the first divided member and the second divided member that are divided by a predetermined plane, in the desired direction in the exposure region on the irradiated surface (mask M and plate P). The uneven illuminance unevenness along can be corrected well.

  In the above-described embodiment, the aperture stop 9 is divided into two by one division plane including the optical axis AX. However, various modifications are possible with respect to the number of divisions of the aperture stop 9 and the setting of the division plane. is there. Specifically, in the first modification shown in FIG. 4, the aperture stop 9 is constituted by an XZ plane including the optical axis AX and four division planes parallel to the XZ plane (generally by a plurality of division planes parallel to each other). Is divided into 10 parts. That is, as shown in FIG. 4A, the aperture stop 9 according to the first modification is constituted by ten divided members 9e, 9f, 9g, 9h, 9i, 9j, 9k, 9m, 9n, 9p. ing. And each division member (9e-9p) is comprised so that it can each move independently along the optical axis AX, as shown in FIG.4 (b).

  In this case, it is preferable that the end portion on the predetermined dividing surface side of each dividing member and the end portion on the dividing surface side of the adjacent dividing member are connected to each other in a stretchable manner, for example, by a light shielding connecting member 9q. That is, taking the dividing member 9e as an example, the end of the dividing member 9e on the dividing surface side (lower end in the figure) and the end of the dividing members 9f and 9g on the same dividing surface (upper side in the figure) It is preferable that the end portion is connected to the connecting member 9q. As described above, the end portions of the adjacent divided members are connected to each other by the light-shielding connecting member 9q so as to expand and contract, so that, for example, even if each divided member is moved largely along the optical axis AX, Can be reliably blocked to prevent light leakage between the divided members.

  In the above-described embodiment, the first divided member 9a and the second divided member 9b constituting the aperture stop 9 are configured to be independently movable along the optical axis AX. However, in addition to the movement along the optical axis AX, the first split member 9a and the second split member 9b can be configured to be movable in the Y direction orthogonal to the optical axis AX. Specifically, in the second modification shown in FIG. 5, the first divided member 9a and the second divided member 9b are integrally moved in the + Y direction.

  As a result, the incident angle of the principal ray incident on each point P1 to P3 on the mask M changes according to the integral movement distance of the first dividing member 9a and the second dividing member 9b. In other words, in the second modification, even if the telecentricity of the illumination light deteriorates due to the movement of the first divided member 9a or the second divided member 9b along the optical axis AX, the first divided member 9a and the second divided member 9a The telecentricity of the illumination light can be adjusted by moving the dividing member 9b integrally in a predetermined direction.

  More generally, the telecentricity of the illumination light is adjusted by moving at least one of the first divided member 9a and the second divided member 9b in a direction orthogonal to the optical axis AX, The illumination σ value can be changed. That is, the illumination σ value decreases as the first divided member 9a and the second divided member 9b approach along the direction orthogonal to the optical axis AX, and the first divided member 9a and the second divided member 9b move away. This increases the illumination σ value.

  By the way, in the step-and-scan type exposure apparatus, due to the averaging effect of scanning exposure, even if illuminance gradient unevenness in the scanning direction remains to some extent in the exposure region on the plate P, it does not become a big problem. The illuminance gradient unevenness to be corrected in the exposure region on the plate P is the illuminance gradient unevenness in the scanning orthogonal direction. Therefore, in the scanning exposure apparatus, it is preferable to divide the aperture stop 9 by a dividing surface parallel to a plane including the scanning direction.

  Specifically, in the exposure apparatus of FIG. 1, scanning exposure is performed while moving the mask M and the plate P along the X direction with respect to the projection optical system PL. In this case, if the aperture stop 9 is divided by a dividing plane parallel to the plane including the X direction that is the scanning direction, that is, the XZ plane, as shown in FIG. It can be seen that the correction can be performed. For example, if a reflective surface is interposed between the aperture stop 9 and the mask M, the geometric positional relationship and the optical positional relationship may be different between the aperture stop 9 and the mask M. Therefore, in the scanning type exposure apparatus, the aperture stop 9 is divided not by a plane that is geometrically parallel to the plane including the scanning direction but by a plane that is parallel to the plane optically corresponding to the plane including the scanning direction. This is very important.

  In the above-described embodiment, the aperture stop 9 is divided into two by one division plane including the optical axis AX. However, the present invention is not limited to this, and as in the third modified example shown in FIG. 6, the XZ plane including the optical axis AX and the YZ plane including the optical axis AX (generally, the aperture region of the aperture stop 9). It is also possible to divide the aperture stop 9 into four parts by a plurality of dividing surfaces intersecting each other. That is, the aperture stop 9 according to the third modification is configured by four divided members 9r, 9s, 9t, and 9u. Each divided member (9r to 9u) is configured to be independently movable along the optical axis AX.

  In the third modified example, the mask M can be obtained by, for example, moving the dividing member 9r and the dividing member 9s integrally by a predetermined distance, or by moving the dividing member 9t and the dividing member 9u integrally by a predetermined distance. Inclination illuminance unevenness along the Y direction in the upper illumination area (and hence the exposure area on the plate P) can be corrected. Further, for example, by moving the dividing member 9r and the dividing member 9u integrally by a predetermined distance, or by moving the dividing member 9s and the dividing member 9t integrally by a predetermined distance, an illumination area on the mask M is obtained. Inclination illuminance unevenness along the X direction in the (exposed area on the plate P) can be corrected.

  That is, the scanning exposure apparatus can correct both illuminance inclination unevenness in the scanning direction and illuminance inclination unevenness in the scanning orthogonal direction. More generally, by dividing the aperture stop 9 into a plurality of parts by a plurality of dividing surfaces that intersect with each other within the aperture region of the aperture stop 9, uneven illumination unevenness in any of a plurality of directions can be corrected.

  The exposure apparatus according to the present embodiment is obtained by electrically, mechanically, or optically coupling the optical members and the stages in the embodiment shown in FIG. 1 so as to achieve the functions described above. Can be assembled. Next, in the exposure apparatus shown in FIG. 1, a liquid crystal display element as a micro device can be obtained by forming a predetermined pattern (circuit pattern, electrode pattern, etc.) on a plate (glass substrate). Hereinafter, an example of the technique at this time will be described with reference to the flowchart of FIG.

  In FIG. 7, in the pattern forming process 401, a so-called photolithography process is performed in which an exposure apparatus according to the present embodiment is used to transfer and expose a mask (reticle) pattern onto a photosensitive substrate (such as a glass substrate coated with a resist). Is done. By this photolithography process, a predetermined pattern including a large number of electrodes and the like is formed on the photosensitive substrate. Thereafter, the exposed substrate undergoes steps such as a developing step, an etching step, and a resist stripping step, whereby a predetermined pattern is formed on the substrate, and the process proceeds to the next color filter forming step 402.

  Next, in the color filter forming step 402, a large number of sets of three dots corresponding to R (Red), G (Green), and B (Blue) are arranged in a matrix or three of R, G, and B A color filter is formed by arranging a plurality of stripe filter sets in the horizontal scanning line direction. Then, after the color filter forming step 402, a cell assembly step 403 is executed.

  In the cell assembly step 403, a liquid crystal panel (liquid crystal cell) is assembled using the substrate having the predetermined pattern obtained in the pattern formation step 401, the color filter obtained in the color filter formation step 402, and the like. In the cell assembly step 403, for example, liquid crystal is injected between the substrate having the predetermined pattern obtained in the pattern formation step 401 and the color filter obtained in the color filter formation step 402, and a liquid crystal panel (liquid crystal cell) is obtained. ).

  Thereafter, in a module assembling step 404, components such as an electric circuit and a backlight for performing a display operation of the assembled liquid crystal panel (liquid crystal cell) are attached to complete a liquid crystal display element. According to the above-described method for manufacturing a liquid crystal display element, a liquid crystal display element having an extremely fine circuit pattern can be obtained with high throughput.

  In addition, a semiconductor device as a micro device can be obtained by forming a predetermined circuit pattern on a wafer or the like as a photosensitive substrate using the exposure apparatus according to the embodiment shown in FIG. Hereinafter, an example of a method for obtaining a semiconductor device as a micro device will be described with reference to the flowchart of FIG.

  First, in step 301 of FIG. 8, a metal film is deposited on one lot of wafers. In the next step 302, a photoresist is applied on the metal film on the one lot of wafers. Thereafter, in step 303, using the exposure apparatus shown in FIG. 1, the image of the pattern on the mask (reticle) is sequentially exposed and transferred to each shot area on the wafer of one lot via the projection optical system PL. The

  Thereafter, in step 304, the photoresist on the one lot of wafers is developed, and in step 305, the resist pattern is etched on the one lot of wafers to form a pattern on the mask. Corresponding circuit patterns are formed in each shot area on each wafer. Thereafter, a device pattern such as a semiconductor element is manufactured by forming a circuit pattern of an upper layer. According to the semiconductor device manufacturing method described above, a semiconductor device having an extremely fine circuit pattern can be obtained with high throughput.

In the above-described embodiment, an example in which g-line light, h-line light, and i-line light are used as exposure light has been described. However, for example, an ultrahigh pressure mercury lamp is used as a light source, and only g-line h Only lines, g-line and h-line, h-line and i-line can be used as exposure light. Alternatively, a KrF excimer laser that supplies 248 nm light, an ArF excimer laser that supplies 193 nm light, an F ₂ laser that supplies 157 nm light, or the like may be used as the light source.

  In the above-described embodiment, the present invention is applied to the illumination optical apparatus of the exposure apparatus. However, the present invention is not limited to this. For a general illumination optical apparatus that illuminates an irradiated surface other than the mask. However, the present invention can be similarly applied.

It is a figure which shows schematically the structure of the exposure apparatus concerning embodiment of this invention. It is a figure which shows schematically the structure of the aperture stop in this embodiment. It is a figure which illustrates roughly the effect | action of the aperture stop in this embodiment. It is a figure which shows schematically the structure of the aperture stop concerning the 1st modification of this embodiment. It is a figure which illustrates roughly the effect | action of the aperture stop concerning the 2nd modification of this embodiment. It is a figure which shows schematically the structure of the aperture stop concerning the 3rd modification of this embodiment. It is a figure which shows the flowchart about an example of the method at the time of obtaining the liquid crystal display element as a microdevice. It is a figure which shows the flowchart about an example of the method at the time of obtaining the semiconductor device as a microdevice.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Light source 2 Elliptical mirror 4 Shutter 5 Relay lens system 6 Wavelength selection filter 7 Collimating lens 8 Fly eye integrator 9 Aperture stop 10 Condenser optical system M Mask MS Mask stage PL Projection optical system P Plate PS Plate stage

Claims (11)

In the illumination optical device that illuminates the illuminated surface with the light flux from the light source,
It has an aperture stop to limit the luminous flux placed on or near the illumination pupil plane,
The aperture stop has a first divided member and a second divided member divided by a predetermined dividing surface,
An illumination optical apparatus, wherein a relative position along an optical axis between the first divided member and the second divided member is configured to be variable. The illumination optical apparatus according to claim 1, wherein the predetermined dividing surface is parallel to a surface including the optical axis. The illumination optical apparatus according to claim 1, wherein the first divided member and the second divided member are configured to be independently movable along the optical axis. 4. The apparatus according to claim 1, wherein at least one member of the first divided member and the second divided member is configured to be movable in a direction orthogonal to the optical axis. 5. The illumination optical device described. A light-shielding connecting member for telescopically connecting the end portion of the first split member on the predetermined split surface side and the end portion of the second split member on the predetermined split surface side; The illumination optical device according to claim 1, wherein the illumination optical device is a light source. The illumination optical apparatus according to claim 1, wherein the aperture stop has a plurality of division surfaces parallel to each other as the predetermined division surface. 6. The illumination optical apparatus according to claim 1, wherein the aperture stop has a plurality of split surfaces that intersect with each other within an aperture region of the aperture stop as the predetermined split surface. Further comprising an optical integrator for dividing the light flux from the light source into a wavefront to form a predetermined light intensity distribution on the illumination pupil plane;
The illumination optical apparatus according to claim 1, wherein the aperture stop is disposed in the vicinity of an exit surface of the optical integrator. An exposure apparatus comprising the illumination optical apparatus according to claim 1 for illuminating a mask, and exposing a pattern of the mask onto a photosensitive substrate. A projection optical system for forming an image of the mask pattern on the photosensitive substrate; and moving the mask and the photosensitive substrate relative to the projection optical system along a scanning direction to move the mask. Is configured to expose the pattern on the photosensitive substrate,
The exposure apparatus according to claim 9, wherein the predetermined dividing surface is optically substantially parallel to a plane including the scanning direction. An exposure method comprising: illuminating a mask using the illumination optical apparatus according to claim 1, and exposing a pattern of the mask onto a photosensitive substrate.

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