JP2006047346A - Substrate laminating method, method for manufacturing electrooptical device, and substrate laminating apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate laminating method with which a chamber is safely evacuated by preventing a valve from being broken with exhaust pressure in opening the valve in evacuating the chamber, a method for manufacturing an electrooptical device including the substrate laminating method, and a substrate laminating apparatus for conducting the substrate laminating method. <P>SOLUTION: The chamber is safely evacuated, since the evacuation differential pressure on a main valve 37 is measured, and when the differential pressure is higher than a predetermined value, the differential pressure is reduced so as to be lower than the predetermined value with a second pipe 34, and when the differential pressure gets lower than the predetermined value, the main valve 37 is opened, and therefore the main valve 37 is not broken with the exhaust pressure in opening the main valve 37. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate bonding method for bonding a pair of substrates constituting an electro-optical device such as a light emitting device typified by a liquid crystal device, a method for manufacturing an electro-optical device including the substrate bonding method, and the substrate. The present invention relates to a substrate bonding apparatus that performs a process related to a bonding method.

As a method for injecting liquid crystal into the liquid crystal panel, there is a method in which a substrate on which liquid crystal is dropped and another substrate are disposed opposite to each other in a chamber, and the two substrates are bonded together while the chamber is in a substantially vacuum state. As a method for evacuating the chamber, for example, evacuation by a pump can be cited. The pump is connected to the chamber through, for example, piping (see, for example, Patent Document 1).
JP 2002-31440 A

  However, although the chamber is kept as dust-free as possible, fine dust and the like are inevitably present. When the inside of the chamber is evacuated and exhausted with a normal pump, there is a possibility that fine dust in such a chamber may be rolled up or the position of the substrate may be shifted. For precision equipment such as liquid crystal panels, even if fine dust adheres, the quality deteriorates.

  In particular, when exhausting, if the differential pressure applied to the valve is equal to or higher than a certain pressure, when the valve is opened, the exhaust pressure of the gas cannot be withstood and the valve is broken. Since the pressure in the chamber and the pressure in the pipe in which the valve is installed are actually different, it is not possible to measure an accurate differential pressure applied to the valve only by measuring the pressure in the chamber. Therefore, when the valve is opened based on the measurement result of the pressure in the chamber, the valve is operated even when the pressure in the chamber is not more than a certain pressure, but the differential pressure applied to the valve is not less than the certain pressure. Will open the valve, and the valve may break.

  In addition, it is necessary to return gas to the atmospheric pressure by leaking gas into the chamber after bonding the substrates, but in this case as well, if the leak is suddenly caused, dust in the chamber in the chamber will be rolled up. End up.

  In view of the circumstances as described above, the object of the present invention is that there is no problem of raising dust in the chamber at the time of exhaust / leakage of the chamber, and the exhaust pressure when the valve is opened at the time of exhaust. It is an object to provide a substrate bonding method capable of preventing breakage and performing safe exhaust, a method for manufacturing an electro-optical device including the substrate bonding method, and a substrate bonding apparatus for performing the substrate bonding method. .

  In order to achieve the above object, a method for bonding substrates according to the present invention includes two substrates in a container connected to a pump through a first pipe and a second pipe having a valve that can be opened and closed. A substrate bonding method in which the two substrates are bonded to each other, the inside of the container is evacuated by the pump, and the two substrates are bonded to each other in the evacuated container, and the second pipe is closed with the valve closed. Is used to exhaust the inside of the container at a predetermined exhaust speed, and the pressure is measured at a position between the valve and the container inside the first pipe, and the measured pressure value is a predetermined value. When the pressure becomes smaller than that, the valve is opened to evacuate the container at an evacuation speed larger than the evacuation speed, and after the inside of the container reaches a predetermined pressure, the two substrates are bonded together. It is characterized by that.

  Here, the “predetermined value” is ideally an allowable value of the differential pressure (allowable maximum differential pressure) that prevents the valve from being destroyed by the exhaust pressure when the valve is opened. A value obtained by adding a margin to the value may be a “predetermined value”.

  According to the present invention, the differential pressure applied to the valve is measured, and when the differential pressure is equal to or greater than a predetermined value, the differential pressure is decreased by the second pipe until the differential pressure is equal to or lower than the predetermined value. Since the valve is opened when the valve becomes open, the valve can be safely exhausted without being destroyed by the exhaust pressure when the valve is opened. When the valve is closed, the pressure between the valve and the pump is very small compared to the pressure between the valve and the container inside the first pipe. Can be estimated to be approximately equal to the differential pressure applied to the valve. Thereby, since only the pressure between the valve and the container needs to be measured, the differential pressure can be detected more easily.

  According to another aspect of the present invention, there is provided a substrate bonding method in which two substrates are arranged to face each other in a container to which a pump is connected via a first pipe having a valve that can be opened and closed, and a second pipe. A substrate bonding method in which the inside of the container is evacuated by the pump, and the two substrates are bonded in the evacuated container, and the second pipe is used with the valve closed. While exhausting the inside of the container at a predetermined exhaust speed, a first pressure is measured at a position between the valve and the container inside the first pipe, and the valve inside the first pipe and the valve A second pressure is measured at a position between the pump and the valve when the differential pressure between the measured first pressure and the second pressure becomes smaller than a predetermined pressure. The container is evacuated at a pumping speed greater than the pumping speed, and the container is evacuated to a predetermined pressure. After reaching, and performing bonding of the two substrates.

  According to the present invention, since the pressures (first pressure and second pressure) on both sides of the valve in the first pipe are respectively measured, a more accurate differential pressure can be obtained.

  In the substrate bonding method according to another aspect of the present invention, two substrates are arranged opposite to each other in a container in which an exhaust unit and a gas supply unit are connected, and the two substrates are exhausted by exhausting the inside of the container. Is a substrate bonding method for supplying a gas into the container and returning the inside of the container to a predetermined pressure after supplying the gas to the container at a predetermined flow rate. The gas flow rate is measured, and the gas is supplied at a flow rate greater than the predetermined flow rate when the measured value of the integrated gas flow rate is higher than a predetermined value.

  Here, the “predetermined value” is ideally such that even when gas is supplied at a flow rate larger than the predetermined flow rate, dust in the container does not roll up and the impact on the substrate need not be taken into consideration. However, a value obtained by adding a margin to the integrated gas flow rate may be set as the “predetermined value”.

  According to the present invention, when the inside of the container is returned to the predetermined pressure, the gas is supplied while measuring the gas flow rate. For example, the integrated gas flow rate supplied into the container is equal to the predetermined value. Until this occurs, the gas can be supplied slowly at a predetermined flow rate, and the gas can be rapidly supplied into the container at a flow rate greater than the predetermined flow rate, assuming that the gas has become higher than the predetermined value. Thereby, the dust in the container is not rolled up, and an impact or the like is not given to the substrate attached by the rapid gas supply.

  In addition, for example, if the gas supply source malfunctions and the supply amount from the gas supply source suddenly increases or decreases, the change in gas flow rate is measured sensitively, so you can quickly notice the change. Can respond quickly.

  An electro-optical device manufacturing method according to another aspect of the present invention is a method for manufacturing an electro-optical device including two substrates disposed to face each other, and the two substrates are bonded by the above-described substrate bonding method. It is characterized by performing bonding.

  According to the present invention, when exhausting for substrate bonding, it is possible to prevent the valve from being destroyed by the exhaust pressure when the valve is opened, and to exhaust safely. Thereby, there is no stop of the production line due to the destruction of the valve, and the cost required for replacement / repair of the destroyed valve can be suppressed.

  A substrate laminating apparatus according to another aspect of the present invention includes a container provided in a hermetically sealable manner, a laminating means provided inside the container and laminating two substrates facing each other, and the inside of the container A pump for exhausting air, a first pipe for connecting the container and the pump, a valve provided in the middle of the first pipe, and the first pipe connected to the container side of the valve. And a second pipe for exhausting the inside of the first pipe on the container side, and a first measuring means for measuring a first pressure inside the container side of the first pipe. It is characterized by that.

  According to the present invention, the differential pressure applied to the valve is measured by the first measuring means, and when the differential pressure is greater than or equal to a predetermined value, the differential pressure is decreased by the second pipe until the differential pressure becomes less than or equal to the predetermined value. Since it is possible to open the valve in anticipation that the value becomes equal to or less than a predetermined value, the valve can be safely exhausted without being destroyed by the exhaust pressure when the valve is opened.

  Moreover, it is preferable to further comprise a second measuring means for measuring a second pressure inside the pump side of the first pipe from the valve side. Thereby, the differential pressure | voltage of a 1st pressure and a 2nd pressure can be calculated | required correctly.

  A substrate laminating apparatus according to another aspect of the present invention includes a container provided in a hermetically sealable manner, a laminating means provided inside the container and laminating two substrates facing each other, and the inside of the container And a gas flow rate measuring means for measuring a flow rate of the gas supplied into the container.

  According to the present invention, the gas can be supplied while measuring the gas flow rate by the gas flow rate measuring unit when the inside of the container exhausted by the exhaust unit is returned to a predetermined pressure after the substrates are bonded together. For example, the gas is slowly supplied at a predetermined flow rate until a predetermined gas integrated flow rate is supplied into the container, and the gas integrated flow rate reaches a predetermined value, and is larger than the predetermined flow rate. Gas can be rapidly supplied into the container at a flow rate. Thereby, the dust in the container is not rolled up, and an impact or the like is not given to the substrate attached by the rapid gas supply.

  In addition, for example, if the gas supply source malfunctions and the supply amount from the gas supply source suddenly increases or decreases, the change in gas flow rate is measured sensitively, so you can quickly notice the change. Can respond quickly.

(First embodiment)
A first embodiment of the present invention will be described with reference to the drawings.
FIG. 1 is a diagram illustrating an overall configuration of the substrate bonding apparatus 1.

  The substrate bonding apparatus 1 covers a table 2 that holds a substrate and is movable in the X direction, the Y direction, and the θ direction, a lower chuck portion 3 installed on the table 2, and the table 2 and the lower chuck portion 3. The vacuum chamber 4 arranged in this manner, the upper chuck portion 5 disposed in the vacuum chamber 4 so as to face the lower chuck portion 3, and the upper chuck portion 5 movably supported in the Z direction, It is comprised roughly from the descent | fall mechanism 6 which pressurizes toward these, These are comprised as a bonding means.

  A viewing window 4 a is provided on the ceiling portion 4 s of the vacuum chamber 4. A bonding microscope 7 for magnifying and observing the alignment mark on the substrate through the sighting window 4a is disposed above the sighting window 4a. The bonding microscope 7 captures an image of the enlarged alignment mark. A CCD camera 10 is provided.

  Further, the substrate bonding apparatus 1 includes an image processing unit 12 that processes an image captured by the CCD camera 10 and a control that controls the table 2 and the lowering mechanism 6 based on data processed by the image processing unit 12. A portion 13 is provided. Further, the lower chuck portion 3 and the upper chuck portion 5 are provided with holding mechanisms (not shown) for holding the substrates by the holding surfaces 3a and 5a facing each other.

  The lower chuck portion 3 and the upper chuck portion 5 may be any mechanism that can hold the substrate even in a substantially vacuum atmosphere, such as a chuck mechanism using electrostatic force or adhesive force, or a mechanical holding mechanism that mechanically holds the substrate. Any mechanism may be provided. For example, when quartz glass is used for the substrate, if a holding method using electrostatic force is used, the holding force is weak and the relative position of the substrate cannot be adjusted with sufficient accuracy. On the other hand, if the holding method is adhesive force, intermolecular force, vacuum force, mechanical holding or the like, sufficient holding force can be exerted even with quartz glass, so the lower chuck portion 3 and the upper chuck portion 5 can be held. It is suitable for use in a mechanism.

  Further, for example, the side wall 4b of the vacuum chamber 4 has an exhaust mechanism 8 that is an exhaust means for exhausting the inside of the vacuum chamber 4, and a leak as a gas supply means that supplies gas into the vacuum chamber 4 exhausted by the exhaust mechanism 8. A mechanism 9 is provided.

FIG. 2 is a diagram schematically showing the configuration of the exhaust mechanism 8 and the leak mechanism 9.
The exhaust mechanism 8 includes a first pipe 31, a pump 32, a second pipe 34, a vacuum gauge 35 as a first measuring means, a vacuum gauge 36 as a second measuring means, and a main valve as a valve. 37, a sub valve 38, and a throttle valve 39.

  The first pipe 31 is formed of, for example, a stainless steel pipe so that the inner diameter is 0.1 m, for example, and connects the pump 32 and the vacuum chamber 4. The pump 32 is a suction device that exhausts the inside of the vacuum chamber 4, and is connected to the first pipe 31.

A main valve 37 is attached to the first pipe 31 so as to divide the first pipe 31. A region α and a region β are formed inside the first pipe 31 partitioned by the main valve 37. If the differential pressure between the region α and the region β is about 30 × 10 ³ Pa or less, the main valve 37 can withstand the fluid pressure when the main valve 37 is opened, that is, is not destroyed. (Allowable maximum differential pressure).

  The second pipe 34 is formed of, for example, stainless steel pipe so that the inner diameter becomes 0.04 m, for example, and is connected to the first pipe 31 so as to bypass the region α and the region β. A sub valve 38 and a throttle valve 39 are attached in the middle of the second pipe 34.

  The vacuum gauges 35 and 36 are, for example, heat conduction vacuum gauges that detect pressure by detecting heat generated by movement of gas molecules, and are attached to the regions α and β, respectively. By measuring the respective pressures in the regions α and β and determining the difference between the measured values, the differential pressure in each region can be detected.

  The leak mechanism 9 includes a gas supply source 40 as a gas supply means, a slow leak pipe 41, a quick leak pipe 42, a slow leak valve 44, a quick leak valve 45 and a throttle valve 46, and a gas flow rate as a gas flow rate measuring means. The measuring device 43 is the main component.

  The gas supply source 40 is a supply source that supplies a gas such as nitrogen gas to the vacuum chamber 4. For example, a gas cylinder or a gas line provided in a factory or the like may be used. The quick leak pipe 42 is formed of, for example, a stainless steel pipe having an inner diameter of 0.01 m and connects the gas supply source 40 and the vacuum chamber 4. A quick leak valve 45 is provided in the middle of the quick leak pipe 42. .

  The slow leak pipe 41 is formed of, for example, a stainless steel pipe so that the inner diameter is 0.008 m. Further, for example, a branch from the quick leak pipe 42 is connected to the vacuum chamber 4, and a slow leak valve 44, a throttle valve 46 and a gas flow rate measuring device 43 are attached on the way. The gas flow rate measuring device 43 measures the instantaneous flow rate of the gas supplied to the vacuum chamber 4 through the slow leak valve 44. The gas flow rate measuring device 43 measures the instantaneous flow rate of the gas passing through the slow leak valve 44, and calculates the integrated flow rate of the gas supplied into the vacuum chamber 4 by integrating with the time required for the passage. You can also do that.

Next, a process of bonding two substrates constituting a liquid crystal display device, for example, using the substrate bonding apparatus 1 configured as described above will be described.
FIG. 3 is a flowchart showing the substrate bonding process.
Two glass substrates constituting a liquid crystal display device are prepared in advance. A TFT array substrate (lower substrate) 50 is formed by forming a TFT, a pixel electrode, an alignment film, etc. on one glass substrate, and a light shielding film, a counter electrode, an alignment film, etc. are formed on the other glass substrate. A counter substrate (upper substrate) 60 is prepared. A spacer for applying a sealing material in a closed frame shape to the lower substrate 50 on which TFTs and the like are formed, and discharging and dropping liquid crystal at a position surrounded by the sealing material to keep the cell thickness constant. Is placed.

  First, the substrates 50 and 60 manufactured in this way are installed in the substrate bonding apparatus 1 (step 301). The upper substrate 60 on which the counter electrode and the like are formed is supplied to the upper chuck portion 5 of the substrate bonding apparatus 1 and the upper substrate 60 is held by a holding mechanism. Further, the lower substrate 50 is supplied to the lower chuck portion 3 (note that the liquid crystal and the sealing material are not shown in the following description for convenience) and held by the holding mechanism.

  Next, the vacuum chamber 4 is lowered, the housing space 4c is closed in a sealed state, the pump 32 is driven, and the sub valve 38 is opened (step 302). By opening the sub-valve 38, as shown in FIG. 4A, the region α in the first pipe 31 is exhausted through the second pipe 34 at an exhaust speed of about 2500 NL / min. The pressure difference with β gradually decreases.

When it is confirmed that the differential pressure between the region α and the region β is lower than a predetermined value, for example, 30 × 10 ³ Pa which is the allowable maximum differential pressure of the main valve 37 (YES in step 303), the sub valve 38 Is closed and the main valve 37 is opened (step 304). By opening the main valve 37, as shown in FIG. 4B, the first pipe 31 has a higher exhaust speed than the exhaust performed through the second pipe 34, for example, an exhaust speed of about 20000 NL / min. The region α is exhausted. In this step, the main valve 37 may be opened while the sub valve 38 is open.

When the inside of the accommodation space 4c is in a predetermined pressure state, for example, 1.33 × 10 ⁻² Pa to 1.33 Pa, the upper substrate 60 and the lower substrate 50 are aligned, and the lower substrate 50 and the upper substrate 60 facing each other are aligned. Are pasted together (step 305). The alignment is performed so that the relative position between the lower substrate 50 and the upper substrate 60 is detected and the displacement of the relative position is corrected. For example, alignment marks (not shown) formed on the lower substrate 50 and the upper substrate 60 are enlarged using the bonding microscope 7 and taken into the CCD camera 10. The relative position between the upper substrate 60 and the lower substrate 50 input to the image processing unit 12 is detected from the image data of the alignment marks captured by the CCD camera 10. Based on the relative position detected by the image processing unit 12, the control unit 13 drives the table 2 to roughly position the relative position between the upper substrate 60 and the lower substrate 50 within an allowable range. After the substrates 50 and 60 are roughly positioned, the lower chuck 6 lowers (relatively moves) the upper chuck portion 5 to bond the opposing substrates 50 and 60 together.

  After the substrates 50 and 60 are bonded together, the inside of the vacuum chamber 4 is returned to atmospheric pressure by the slow leak valve 44 and the rapid leak valve 45. First, the slow leak valve 44 is opened (step 306). By opening the slow leak valve 44, as shown in FIG. 5A, gas is supplied through the slow leak pipe 41 at a flow rate of about 1.5 l / s, and the pressure in the vacuum chamber 4 gradually increases. It gets higher.

  The gas flow rate measuring device 43 measures the integrated flow rate of the gas supplied to the vacuum chamber 4 via the slow leak pipe 41, and confirms that the integrated flow rate is a predetermined amount, for example, 45 l or more (step 307). YES), the slow leak valve 44 is closed and the quick leak valve 45 is opened (step 308).

  By opening the quick leak valve 45, as shown in FIG. 5 (b), the flow rate is larger than when the gas is supplied through the slow leak pipe 41 described above, for example, a flow rate of about 4.5 l / s. The remaining gas amount is supplied into the vacuum chamber 4 via the quick leak pipe 42. Here, the “remaining gas amount” is, for example, an amount obtained by subtracting a predetermined integrated flow rate (for example, 45 l described above) from the volume in the vacuum chamber 4. In this step, the quick leak valve 45 may be opened while the slow leak valve 44 is open.

  When the pressure in the accommodating space 4c in the vacuum chamber 4 reaches a predetermined pressure, for example, about 10.5 Pa, the substrates 50 and 60 are pressed by the pressure difference, and the sealing material is crushed and firmly bonded. Thereafter, the holding of the upper chuck portion 5 and the lower chuck portion 3 is released, the vacuum chamber 4 is raised, and the substrate placed in the non-holding state on the lower chuck portion 3 (in this case, the substrates 50 and 60 are attached). Remove the combined liquid crystal display device). Thereafter, the sealing material is cured (step 309), and the manufacture of the liquid crystal display device is completed.

  Here, regardless of the method described above, for example, as shown in FIG. 6, the main valve 37 is opened without lowering the differential pressure between the region α and the region β to a predetermined value by the second pipe 34 during exhaust. In this case, since the flow pressure of the gas flowing through the main valve 37 exceeds the allowable maximum differential pressure of the main valve 37, the main valve 37 is destroyed. In addition, as shown in FIG. 7, when leaking from the beginning through the rapid leak pipe 42 without leaking slowly through the slow leak pipe 41, the dust in the vacuum chamber 4 is rolled up. Or the position of the substrate may shift.

  According to the present embodiment, during exhaust, the differential pressure applied to the main valve 37 is measured, and when the differential pressure is greater than or equal to a predetermined value, the second pipe 34 reduces the differential pressure until it is less than or equal to the predetermined value. Since the main valve 37 is opened when the differential pressure becomes a predetermined value or less, the main valve 37 is not destroyed by the exhaust pressure when the main valve 37 is opened, and can be safely exhausted.

  Further, at the time of leakage, when returning the inside of the vacuum chamber 4 to a predetermined pressure, the gas is supplied while measuring the gas flow rate. For example, the flow rate at which the gas is supplied into the vacuum chamber 4 is constant. The gas can be supplied slowly at a predetermined flow rate until reaching a predetermined amount, and when it reaches a certain amount, the gas can be rapidly supplied into the vacuum chamber 4 at a flow rate larger than the predetermined flow rate. Thereby, dust in the vacuum chamber 4 is not rolled up, and an impact or the like is not given to the substrate attached by the rapid gas supply.

  Further, as shown in FIG. 8, for example, when the gas supply source 40 malfunctions and the supply amount from the gas supply source 40 is unexpectedly increased or decreased, the gas flow rate measuring device 43 controls the gas flow rate. Because changes are measured sensitively, it is possible to quickly notice changes and respond quickly.

(Second Embodiment)
Next, a second embodiment of the present invention will be described.
FIG. 9 is a diagram illustrating a configuration of the substrate bonding apparatus 101 according to the present embodiment. About the same component as 1st Embodiment, the same code | symbol is attached | subjected and the description is abbreviate | omitted. In the present embodiment, since the configuration of the exhaust mechanism 8 is different from that of the first embodiment, this point will be mainly described.

  As in the first embodiment, the exhaust mechanism 8 includes a first pipe 31, a pump 32, a second pipe 34, a main valve 37, a sub valve 38, and a throttle valve 39. The inner diameters of the first pipe 31 and the second pipe 34 and the allowable maximum differential pressure of the main valve are the same values as in the first embodiment. In the present embodiment, unlike the first embodiment, the vacuum gauge 105 is provided only on the region α side, and the vacuum gauge is not provided on the region β side.

FIG. 10 is a diagram illustrating the pressure in the region α and the region β when the main valve 37 is closed. The pressure on the region α side is reduced from, for example, the atmospheric pressure (about 10 ⁵ Pa) through the second pipe 34 to about 30 × 10 ³ Pa which is the allowable maximum differential pressure of the main valve 37. On the other hand, since the pressure on the region β side is sucked by the pump 32, it is almost a vacuum and is about 5 Pa.

  Thus, since the pressure in the region β is much smaller than the pressure in the region α, it is estimated that the pressure in the region α is approximately equal to the differential pressure applied to the main valve 37. Can do. Therefore, the differential pressure can be detected more easily by measuring only the pressure in the region α.

  It should be noted that the technical scope of the present invention is not limited to the above-described embodiments, and can be appropriately modified without departing from the spirit of the present invention.

It is a figure which shows the structure of the board | substrate bonding apparatus which concerns on 1st Embodiment of this invention. It is a figure which shows the structure of the pump mechanism and leak mechanism of the board | substrate bonding apparatus which concern on this embodiment. It is a flowchart which shows the operation | movement process of a board | substrate bonding apparatus. It is a figure which shows the mode of the exhaust_gas | exhaustion by a board | substrate bonding apparatus. It is a figure which shows the mode of the leak by a board | substrate bonding apparatus. It is a figure which shows a mode that a main valve is destroyed. It is a figure which shows a mode that dust is wound up in a vacuum chamber. It is a figure which shows a mode when abnormality arises in operation | movement of a gas supply source. It is a figure which shows the structure of the board | substrate bonding apparatus which concerns on 2nd Embodiment of this invention. It is a figure which shows a part of board | substrate bonding apparatus which concerns on this embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1,101 ... Board | substrate bonding apparatus 4 ... Vacuum chamber 8 ... Pump mechanism 9 ... Leak mechanism 31 ... 1st piping 32 ... Pump 34 ... 2nd piping 35, 36, 105 ... Vacuum gauge 37 ... Main valve 40 ... Gas Supply source 41 ... Slow leak pipe 42 ... Rapid leak pipe 43 ... Gas flow measuring instrument 44 ... Slow leak valve 45 ... Rapid leak valve

Claims (7)

Two substrates were placed opposite to each other in a container to which a pump was connected via a first pipe and a second pipe having an openable / closable valve, and the inside of the container was exhausted by the pump. A substrate laminating method for laminating the two substrates in the container,
With the valve closed, the inside of the container is exhausted at a predetermined exhaust speed using the second pipe, and the pressure is measured at a position between the valve and the container inside the first pipe. When the measured pressure value becomes smaller than a predetermined value, the valve is opened and the inside of the container is exhausted at an exhaust speed larger than the exhaust speed, and the inside of the container reaches a predetermined pressure. And then bonding the two substrates together. Two substrates are arranged opposite to each other in a container to which a pump is connected via a first pipe and a second pipe having a valve that can be opened and closed, and the inside of the container is exhausted by the pump. A substrate laminating method for laminating the two substrates in the container,
While the valve is closed, the container is evacuated at a predetermined exhaust speed using the second pipe, and the first pipe is disposed at a position between the valve and the container inside the first pipe. A pressure is measured, a second pressure is measured at a position between the valve and the pump in the first pipe, and a differential pressure between the measured first pressure and the second pressure is When the pressure becomes lower than a predetermined pressure, the valve is opened and the inside of the container is evacuated at a higher exhaust speed than the exhaust speed. After the inside of the container reaches a predetermined pressure, the two substrates are attached. A method for bonding substrates, comprising performing bonding. Two substrates are arranged opposite to each other in a container to which an exhaust means and a gas supply means are connected, and after the inside of the container is exhausted and the two substrates are bonded together, gas is introduced into the container. A substrate bonding method for supplying and returning the inside of the container to a predetermined pressure,
Gas is supplied into the container at a predetermined flow rate, the flow rate of the supplied gas is measured, and when the measured gas integrated flow rate value is higher than a predetermined value, the gas flow rate is higher than the predetermined flow rate. A substrate bonding method, wherein the gas is supplied at a high flow rate. A method of manufacturing an electro-optical device including two substrates disposed opposite to each other,
A method for manufacturing an electro-optical device, wherein the two substrates are bonded together by the substrate bonding method according to claim 1. A container provided in a sealable manner;
Bonding means provided inside the container, and two substrates are arranged opposite to each other and bonded together;
A pump for exhausting the inside of the container;
A first pipe connecting the container and the pump;
A valve provided in the middle of the first pipe;
A second pipe that is connected to the container side of the first pipe and exhausts the inside of the first pipe on the container side;
And a first measuring means for measuring a first pressure inside the container of the first pipe.   6. The substrate bonding apparatus according to claim 5, further comprising a second measuring unit configured to measure a second pressure inside the first pipe on a side closer to the pump than the valve. A container provided in a sealable manner;
Bonding means provided inside the container, and two substrates are arranged opposite to each other and bonded together;
Exhaust means for exhausting the interior of the container;
Gas supply means for supplying gas into the container at a variable flow rate;
And a gas flow rate measuring means for measuring a flow rate of the gas supplied into the container.

Images