JP2006043787A - Segment grinding wheel for plane grinding - Google Patents

Segment grinding wheel for plane grinding Download PDF

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JP2006043787A
JP2006043787A JP2004224421A JP2004224421A JP2006043787A JP 2006043787 A JP2006043787 A JP 2006043787A JP 2004224421 A JP2004224421 A JP 2004224421A JP 2004224421 A JP2004224421 A JP 2004224421A JP 2006043787 A JP2006043787 A JP 2006043787A
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grindstone
row
grinding
segment
segments
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Yoshimichi Nozawa
義道 野澤
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Coorstek KK
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Toshiba Ceramics Co Ltd
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  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a segment grinding wheel for plane grinding, improving in-plane uniformity of roughness of a wafer. <P>SOLUTION: This segment grinding wheel for plane grinding includes: a rotary disk 2; a first grinding wheel row 3 formed by disposing a plurality of grinding wheel segments 3s at fixed spaces p<SB>1</SB>like a ring on the surface of the rotary disk 2; a second grinding wheel row 4 formed by disposing a plurality of grinding wheel segments 4s at fixed spaces p<SB>2</SB>with a gap g<SB>1</SB>from the inside of the first grinding wheel row 3; and a third grinding wheel row 5 formed by disposing a plurality of grinding wheel segments 5s at fixed spaces p<SB>3</SB>with a gap g<SB>2</SB>from the inside of the second grinding wheel row 4. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は平面研削用セグメント砥石に係り、特に複数の砥石セグメントを円周方向に一定間隔を設けてリング状に配置してなる砥石列を3列以上設けた平面研削用セグメント砥石に関する。   The present invention relates to a surface grind segment grindstone, and more particularly to a surface grind segment grindstone provided with three or more grindstone rows in which a plurality of grindstone segments are arranged in a ring shape at regular intervals in the circumferential direction.

LSI、MOSFET等の半導体素子形成用基板として好適に用いられているシリコンウェーハ(以下、単にウェーハという)の製造過程のうち、ウェーハの高平坦化を目的として、片面、又は、両面の研削加工を行っている。従来、このような研削で用いられている研削用砥石(以下、セグメント砥石という)は回転円盤の外周に一列の砥石を配置して形成したものが一般的に知られている。   In the manufacturing process of a silicon wafer (hereinafter simply referred to as a wafer) that is suitably used as a substrate for forming a semiconductor element such as an LSI or MOSFET, one or both sides are ground for the purpose of high planarization of the wafer. Is going. Conventionally, a grinding wheel (hereinafter referred to as a segment grindstone) used in such grinding is generally known in which a row of grinding stones are arranged on the outer periphery of a rotating disk.

従来、このようなセグメント砥石を用いて研削する場合は、図5に示すように、ウェーハとセグメント砥石を約半径分位置をずらして接触させて、ウェーハと砥石を逆に回転させて、ウェーハ表面の研削を行う。この場合、ウェーハの中心部には、常にセグメント砥石が接触している状態であるため、研削面の粗さとしては非常に良好であるが、研削時の加工温度や砥石の加工時間などに起因して研削後のウェーハの中心が凹む現象が発生し易い。また、研削幅が狭いため、偏研削になり易い。さらに、ウェーハを回転させながら研削を行うため、ウェーハの中心から外周に向かって、研削時の砥石の存在割合が少なくなるため、中心から外周に向かって粗さが悪化する。このような粗さの悪化は後工程(研磨工程等)での加工取代量を増加させるため、生産性が低下する。   Conventionally, when grinding using such a segment grindstone, as shown in FIG. 5, the wafer and the segment grindstone are brought into contact with a position shifted by about a radius, the wafer and the grindstone are rotated in reverse, Grinding. In this case, since the segment grindstone is always in contact with the center of the wafer, the roughness of the grinding surface is very good, but due to the processing temperature during grinding and the processing time of the grindstone, etc. As a result, the center of the wafer after grinding is likely to be recessed. Moreover, since the grinding width is narrow, it is easy to perform partial grinding. Further, since the grinding is performed while rotating the wafer, the ratio of the grinding stone existing at the time of grinding decreases from the center of the wafer toward the outer periphery, and the roughness deteriorates from the center toward the outer periphery. Such a deterioration in roughness increases the amount of machining allowance in a subsequent process (such as a polishing process), resulting in a decrease in productivity.

このような従来の砥石の問題点を解決するものとして、特許文献1に記載のセグメント砥石は砥石を内外に二列設け、内側砥石列の硬度を外周より高くすることにより研削幅を広く確保し研削の均一化を図ったものである。また、特許文献2に記載されたセグメントは二列の砥石列のうち、内側の砥石列の砥石間隔を外周砥石より広くし、ウェーハの中央を研削することにより、ウェーハ中央の凹みの低減を図っている。   In order to solve such problems of the conventional grindstone, the segment grindstone described in Patent Document 1 is provided with two rows of grindstones on the inside and outside, and the inner grindstone row has a higher hardness than the outer circumference to ensure a wide grinding width. It is intended for uniform grinding. In addition, the segment described in Patent Document 2 is designed to reduce the dent in the center of the wafer by grinding the center of the wafer by making the grindstone interval of the inner grindstone row wider than the outer grindstone among the two rows of grindstones. ing.

しかし、特許文献1および特許文献2に記載の発明においては、ウェーハ外周部の粗さが改善されていないという問題を残す。
特開2000−301465号公報 特開2003−251567号公報
However, in the inventions described in Patent Document 1 and Patent Document 2, there remains a problem that the roughness of the outer peripheral portion of the wafer is not improved.
JP 2000-301465 A JP 2003-251567 A

そこで、本発明は、上記問題を解決し、ウェーハの粗さの面内均一性を図ることができる平面研削用セグメント砥石を提供することを目的とする。   Therefore, an object of the present invention is to provide a segment grindstone for surface grinding that can solve the above-described problems and can achieve in-plane uniformity of the roughness of the wafer.

上記目的を達成するため、本発明に係る平面研削用セグメント砥石は、回転円盤と、少なくとも、この回転円盤の表面に複数の砥石セグメントが一定間隔を設けてリング状に配置されてなる第1の砥石列と、この第1の砥石列の内側に間隔を有して配置されかつ、複数の砥石セグメントが一定間隔を有して配置されてなる第2の砥石列と、この第2の砥石列の内側に間隔を有して配置されかつ、複数の砥石セグメントが一定間隔を有して配置されてなる第3の砥石列を有することを特徴とする。   In order to achieve the above object, a segment grindstone for surface grinding according to the present invention includes a rotating disk, and a first structure in which a plurality of grindstone segments are arranged in a ring shape at regular intervals on the surface of the rotating disk. A grindstone row, a second grindstone row that is arranged with an interval inside the first grindstone row, and in which a plurality of grindstone segments are arranged with a constant interval, and the second grindstone row And a third grindstone row in which a plurality of grindstone segments are arranged at regular intervals.

また、本発明に係る平面研削用セグメント砥石は、回転円盤と、この回転円盤の表面に複数の扇形状の砥石セグメントが円周方向に間隔を設けて形成されており、前記砥石セグメントは、一定間隔を設けてリング状に配置されてなる第1の砥石列と、この第1の砥石列の内側に配置されている第2の砥石列と、この第2の砥石列の内側に間隔を有して配置されている第3の砥石列を有し、前記砥石列間には砥石溝部が形成されて、前記砥石セグメント間の円周方向に対する間隔は、外周から内周方向に向かって直線状に漸減する幅狭扇形状をなすことを特徴とする。 Moreover, the segment grindstone for surface grinding according to the present invention includes a rotating disk, and a plurality of fan-shaped grindstone segments formed on the surface of the rotating disk at intervals in the circumferential direction. A first grindstone row arranged in a ring shape with a gap, a second grindstone row arranged inside the first grindstone row, and a gap inside the second grindstone row. A grinding wheel groove portion is formed between the grinding wheel rows, and the spacing between the grinding wheel segments in the circumferential direction is linear from the outer circumference toward the inner circumferential direction. It is characterized by a narrow fan shape that gradually decreases.

本発明に係る平面研削用セグメント砥石によれば、ウェーハ外周部における粗さの悪化を抑制し、ウェーハの粗さの面内均一性を図ることができる平面研削用セグメント砥石を提供することができる。   According to the segment grindstone for surface grinding according to the present invention, it is possible to provide a segment grindstone for surface grinding that can suppress the deterioration of the roughness at the outer peripheral portion of the wafer and achieve in-plane uniformity of the roughness of the wafer. .

以下、本発明の一実施形態に係る平面研削用セグメント砥石について添付図面を参照して説明する。   Hereinafter, a segment grindstone for surface grinding according to an embodiment of the present invention will be described with reference to the accompanying drawings.

図1は本発明の一実施形態に係る平面研削用セグメント砥石の概念図である。   FIG. 1 is a conceptual diagram of a segment grindstone for surface grinding according to an embodiment of the present invention.

図1に示すように、本実施形態に係る平面研削用セグメント砥石1は、回転円盤2と、この回転円盤2の表面にリング状に配置されてなる第1の砥石列としての外側砥石列3と、この外側砥石列3の内側に間隔gを有して配置された第2の砥石列としての中間砥石列4と、この中間砥石列4の内側に間隔gを有して配置された第3の砥石列としての内側砥石列5を有している。 As shown in FIG. 1, a segment grindstone 1 for surface grinding according to this embodiment includes a rotating disc 2 and an outer grindstone row 3 as a first grindstone row arranged in a ring shape on the surface of the rotating disc 2. And an intermediate grindstone row 4 as a second grindstone row arranged with a gap g 1 inside the outer grindstone row 3, and a gap g 2 arranged inside the intermediate grindstone row 4. Further, an inner grindstone row 5 as a third grindstone row is provided.

外側砥石列3は、複数の円弧状の砥石セグメント3sが円周方向に一定間隔pを設けてリング状に配置されてなり、中間砥石列4は、複数の円弧状の砥石セグメント4sが外側砥石列3の内周に間隔pを有して配置されてなり、さらに、内側砥石列5は、複数の円弧状の砥石セグメント5sが中間砥石列4の内周に間隔pを有して配置されてなっている。 The outer grinding wheel train 3, a plurality of arc-shaped grindstone segments 3s is disposed in a ring shape provided with a predetermined interval p 1 in the circumferential direction, intermediate grinding wheel column 4, a plurality of arc-shaped grindstone segments 4s outer The inner grindstone row 5 is arranged with an interval p 2 on the inner periphery of the grindstone row 3, and the inner grindstone row 5 has a plurality of arc-shaped grindstone segments 5 s with an interval p 3 on the inner circumference of the intermediate grindstone row 4. Are arranged.

上記外側砥石列3の半径rと内側砥石列5の半径rの差が、被研削物の半径の7/20〜9/10であるのが好ましい(上記外側砥石列3の半径rと内側砥石列5の半径rとの差と、被研削物の半径との比について、以下に被研削物との半径比という)。1/4より小さいとウェーハ外周部における砥石の存在割合が少なくなるため、研削負荷が高くなり被研削物の外周部の粗さの改善効果を十分発揮できない。また、9/10を超えると、外周部の粗さは改善されるものの、間隔gと、間隔gの幅が大きくなるため、ウェーハ半径方向の特定の位置に砥石が常に存在することになるため、その部分の研削量が増加して凹みが発生するため、平坦度が悪化してしまう。上記被研削物との半径比がより好ましくは、7/20〜13/20である。この範囲とすることで、被研削物の外周部の粗さの改善効果があるとともに、研削時における平坦度が良化する効果も得ることができる。 Difference radius r 2 of a radius r 1 and the inner grinding wheel column 5 of the outer grinding wheel column 3, the radius r 1 radius of 7 / 20-9 / a preferably is 10 (the outer grinding wheel column 3 of object to be ground And the ratio of the difference between the radius r 2 of the inner grindstone row 5 and the radius of the workpiece to be ground is hereinafter referred to as a radius ratio with the workpiece). If the ratio is smaller than 1/4, the ratio of the grinding stone existing in the outer peripheral portion of the wafer decreases, so that the grinding load increases and the effect of improving the roughness of the outer peripheral portion of the workpiece cannot be exhibited sufficiently. If it exceeds 9/10, although the roughness of the outer peripheral portion is improved, the gap g 1, the width of the gap g 2 increases, that grindstone at a specific position of the wafer radial direction is always present Therefore, since the amount of grinding at that portion increases and a dent is generated, the flatness deteriorates. The radius ratio with respect to the workpiece is more preferably 7/20 to 13/20. By setting it as this range, while having the effect of improving the roughness of the outer peripheral part of a to-be-ground object, the effect of improving the flatness at the time of grinding can also be acquired.

また、間隔pは間隔pよりも広く、間隔pは間隔pよりも広く、すなわち複数の砥石セグメントの間隔は、外列のものから内列のものに向かって漸減するのが好ましい。ウェーハ中央を研削する第1の砥石列3の間隔pを広く確保することにより、ウェーハの中心部に、常に砥石が接触している状態を少なくすることで中央の凹みを改善し、また、砥石セグメントの間隔を外列のものから内列のものに向けて漸減させる、すなわち、ウェーハと砥石と接触する場合において、ウェーハ中央部から外周部に向かって、砥石セグメントの間隔を少なくさせることで、中央部とは逆に、砥石が接触している状態をより多くすることで、研削における粗さの向上をはかることができる。 Also, wider than the spacing p 1 interval p 2, wider than the interval p 2 interval p 3, i.e. the distance between the plurality of grinding segments, preferably gradually decreases to that of the inner column from the outer row ones . By ensuring a wide interval p 1 between the first grindstone rows 3 for grinding the wafer center, the state where the grindstone is always in contact with the central portion of the wafer is reduced, and the central recess is improved. By gradually decreasing the distance between the grindstone segments from the outer row toward the inner row, that is, when contacting the wafer and the grindstone, by reducing the grindstone segment distance from the wafer center to the outer periphery. Contrary to the central portion, the roughness in grinding can be improved by increasing the number of contacted grinding wheels.

このような構成とすることで研削加工時における冷却水を内側、中央、外側に位置する各砥石セグメントにそれぞれまんべんなく供給することができる。   With such a configuration, the cooling water at the time of grinding can be supplied evenly to each grindstone segment located on the inside, center, and outside.

次に本実施形態に係る平面研削用セグメント砥石を用いたウェーハの研削方法について説明する。   Next, a wafer grinding method using the surface grind segment grindstone according to this embodiment will be described.

例えば、図2に示すような研削装置21に本発明に係るセグメント砥石1を取り付け、図示しない保持手段によりウェーハWを保持する。しかる後、セグメント砥石1とウェーハWを逆方向に回転させ、ウェーハWに冷却水を供給しながら、半導体ウェーハWにセグメント砥石1を押し付けて、研削加工を行う。また、本発明に係る平面研削用セグメント砥石は、図2に示すような、片面研削に適するが、一般的な両面研削装置にも適用することができる。   For example, the segment grindstone 1 according to the present invention is attached to a grinding apparatus 21 as shown in FIG. 2, and the wafer W is held by holding means (not shown). Thereafter, the segment grindstone 1 and the wafer W are rotated in the opposite directions, and the segment grindstone 1 is pressed against the semiconductor wafer W while supplying cooling water to the wafer W to perform grinding. The segment grinding stone for surface grinding according to the present invention is suitable for single-side grinding as shown in FIG. 2, but can also be applied to a general double-side grinding apparatus.

この研削過程において、図3に示すように、3列の砥石列により、研削時のウェーハ外周部の砥石の存在割合を増加させて砥石の接触面積を確保し、砥石の一点にかかる仕事量をウェーハ外周部と内周部で均一化させるので、ウェーハ外周部の粗さが改善され、研削後のウェーハ表面粗さの均一化を図ることができる。   In this grinding process, as shown in FIG. 3, the grinding wheel row of three rows increases the abundance ratio of the grinding wheel on the outer periphery of the wafer during grinding to secure the contact area of the grinding wheel, and the work applied to one point of the grinding stone is reduced. Since the wafer outer peripheral portion and the inner peripheral portion are made uniform, the roughness of the wafer outer peripheral portion is improved, and the wafer surface roughness after grinding can be made uniform.

なお、上記実施形態の平面研削用セグメント砥石は、図1に示す構成に限らず、他の実施形態として、図4に示すように、回転円盤12に、複数の扇形状の砥石セグメント13が円周方向に間隔を設けて形成されており、上記砥石セグメント13は、一定間隔を設けてリング状に配置されてなる第1の砥石列14と、この第1の砥石列14の内側に配置されている第2の砥石列15と、この第2の砥石列15の内側に間隔を有して配置されている第3の砥石列16を有し、上記砥石列間には砥石溝部17が形成されている。また、前記砥石セグメント間の円周方向に対する間隔Pは、外周から内周方向に向かって直線状に漸減する幅狭扇形状となっている。この構成とすることで、図1に示す構成と同様な作用、効果を得ることができる。   In addition, the segment grindstone for surface grinding of the said embodiment is not restricted to the structure shown in FIG. 1, but as shown in FIG. 4, as shown in FIG. The grindstone segment 13 is formed with a space in the circumferential direction, and the grindstone segment 13 is disposed inside the first grindstone row 14 with a first grindstone row 14 arranged in a ring shape with a constant space. A second grindstone row 15 and a third grindstone row 16 disposed inside the second grindstone row 15 with a gap therebetween, and a grindstone groove portion 17 is formed between the grindstone rows. Has been. Moreover, the space | interval P between the said grindstone segments with respect to the circumferential direction becomes a narrow fan shape which reduces gradually linearly toward the inner peripheral direction from the outer periphery. By adopting this configuration, the same operation and effect as the configuration shown in FIG. 1 can be obtained.

図1に示すような本発明に係る平面研削用セグメント砥石を用い、中間砥石列、内側砥石列の直径を変化させることにより、砥石列間の間隔を変化させ、直径200mmのシリコンウェーハの研削を行い、ウェーハ外周、ウェーハR/2およびウェーハ中央の粗さと、平坦度を測定して比較した。   By using the segment grindstone for surface grinding according to the present invention as shown in FIG. 1, by changing the diameters of the intermediate grindstone row and the inner grindstone row, the interval between the grindstone rows is changed to grind a silicon wafer having a diameter of 200 mm. The roughness of the wafer outer periphery, wafer R / 2 and wafer center, and the flatness were measured and compared.

結果を表1に示す。

Figure 2006043787
The results are shown in Table 1.
Figure 2006043787

表1からわかるように実施例1から実施例4、すなわち、被研削物との半径比が7/20から9/10の範囲において、粗さの最大公差が比較例、参考例に比べて非常にすぐれている結果が得られた。特に、被研削物との半径比が7/20から13/20の範囲においては、粗さの最大公差とともに、平坦度まで良化する効果があることが確認された。   As can be seen from Table 1, in Examples 1 to 4, that is, when the radius ratio to the workpiece is in the range of 7/20 to 9/10, the maximum tolerance of roughness is much higher than that of the comparative example and the reference example. Excellent results were obtained. In particular, it was confirmed that when the radius ratio to the object to be ground is in the range of 7/20 to 13/20, there is an effect of improving the flatness as well as the maximum tolerance of roughness.

本発明の一実施形態に係る平面研削用セグメント砥石の概念図。The conceptual diagram of the segment grindstone for surface grinding which concerns on one Embodiment of this invention. 本発明の一実施形態に係る平面研削用セグメント砥石を取り付けた片面研削装置の概念図。The conceptual diagram of the single-sided grinding apparatus which attached the segment grindstone for surface grinding which concerns on one Embodiment of this invention. 本発明に係る平面研削用セグメント砥石を用いた被研削物の研削状態を示す概念図。The conceptual diagram which shows the grinding state of the to-be-ground object using the segment grindstone for surface grinding which concerns on this invention. 本発明の他の実施形態に係る平面研削用セグメント砥石の概念図。The conceptual diagram of the segment grindstone for surface grinding which concerns on other embodiment of this invention. 従来の平面研削用セグメント砥石を用いた被研削物の研削状態を示す概念図。The conceptual diagram which shows the grinding state of the to-be-ground object using the conventional segment grindstone for surface grinding.

符号の説明Explanation of symbols

1 平面研削用セグメント砥石
2 回転円盤
3 外側砥石列(第1の砥石列)
3s 砥石セグメント
4 中間砥石列(第2の砥石列)
4s 砥石セグメント
5 内側砥石列(第3の砥石列)
5s 砥石セグメント
DESCRIPTION OF SYMBOLS 1 Segment grindstone for surface grinding 2 Rotary disk 3 Outer grindstone row (1st grindstone row)
3s Wheel segment 4 Intermediate wheel row (second wheel row)
4s grinding wheel segment 5 inner grinding wheel row (third grinding wheel row)
5s grinding wheel segment

Claims (4)

回転円盤と、少なくとも、この回転円盤の表面に複数の砥石セグメントが一定間隔を設けてリング状に配置されてなる第1の砥石列と、この第1の砥石列の内側に間隔を有して配置されかつ、複数の砥石セグメントが一定間隔を有して配置されてなる第2の砥石列と、この第2の砥石列の内側に間隔を有して配置されかつ、複数の砥石セグメントが一定間隔を有して配置されてなる第3の砥石列を有することを特徴とする平面研削用セグメント砥石。 A rotating disk, at least a first grindstone row in which a plurality of grindstone segments are arranged in a ring shape on the surface of the rotating disc with a certain interval, and an interval is provided inside the first grindstone row. And a second grindstone row in which a plurality of grindstone segments are arranged at a constant interval, and a plurality of grindstone segments are arranged at intervals inside the second grindstone row. A segment grindstone for surface grinding, comprising a third grindstone row arranged at intervals. 回転円盤と、この回転円盤の表面に複数の扇形状の砥石セグメントが円周方向に間隔を設けて形成されており、前記砥石セグメントは、一定間隔を設けてリング状に配置されてなる第1の砥石列と、この第1の砥石列の内側に配置されている第2の砥石列と、この第2の砥石列の内側に間隔を有して配置されている第3の砥石列を有し、前記砥石列間には砥石溝部が形成されて、前記砥石セグメント間の円周方向に対する間隔は、外周から内周方向に向かって直線状に漸減する幅狭扇形状をなすことを特徴とする平面研削用セグメント砥石。 A rotating disk and a plurality of fan-shaped grindstone segments are formed on the surface of the rotating disk at intervals in the circumferential direction, and the grindstone segments are arranged in a ring shape at regular intervals. A second grindstone row arranged inside the first grindstone row, and a third grindstone row arranged with a space inside the second grindstone row. In addition, a grindstone groove is formed between the grindstone rows, and the interval between the grindstone segments in the circumferential direction forms a narrow fan shape that gradually decreases linearly from the outer circumference toward the inner circumference. Segment grindstone for surface grinding. 前記第1の砥石列の半径と前記第3の砥石列の半径の差が、被研削物の半径の7/20〜9/10であることを特徴とする請求項1、2に記載の平面研削用セグメント砥石。 3. The plane according to claim 1, wherein a difference between a radius of the first grindstone row and a radius of the third grindstone row is 7/20 to 9/10 of a radius of the workpiece. Segment grindstone for grinding. 前記第1の砥石列の半径と前記第3の砥石列の半径の差が、被研削物の半径の7/20〜13/20であることを特徴とする請求項1、2に記載の平面研削用セグメント砥石。 3. The plane according to claim 1, wherein a difference between a radius of the first grindstone row and a radius of the third grindstone row is 7/20 to 13/20 of a radius of the workpiece. Segment grindstone for grinding.
JP2004224421A 2004-07-30 2004-07-30 Segment grinding wheel for plane grinding Pending JP2006043787A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008119776A (en) * 2006-11-09 2008-05-29 Disco Abrasive Syst Ltd Grinding wheel of wafer, grinding method and machine
JP2010123822A (en) * 2008-11-21 2010-06-03 Disco Abrasive Syst Ltd Method of grinding wafer and grinding wheel
CN106457525A (en) * 2014-06-10 2017-02-22 奥林巴斯株式会社 Grinding tool, grinding method, and grinding device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008119776A (en) * 2006-11-09 2008-05-29 Disco Abrasive Syst Ltd Grinding wheel of wafer, grinding method and machine
JP2010123822A (en) * 2008-11-21 2010-06-03 Disco Abrasive Syst Ltd Method of grinding wafer and grinding wheel
CN106457525A (en) * 2014-06-10 2017-02-22 奥林巴斯株式会社 Grinding tool, grinding method, and grinding device

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