JP2006019383A5 - - Google Patents
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- JP2006019383A5 JP2006019383A5 JP2004193735A JP2004193735A JP2006019383A5 JP 2006019383 A5 JP2006019383 A5 JP 2006019383A5 JP 2004193735 A JP2004193735 A JP 2004193735A JP 2004193735 A JP2004193735 A JP 2004193735A JP 2006019383 A5 JP2006019383 A5 JP 2006019383A5
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- forming
- magnetic field
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Claims (21)
外部磁界に応じて磁化方向が変化し、かつ、この外部磁界が零のときに前記磁化方向が
前記固着層の磁化方向と平行となる自由層と、
前記固着層と前記自由層との間に挟まれた中間層と
を含む積層体を備え、
前記中間層は、前記固着層と前記自由層との相互間に生じる前記固着層の磁化方向にお
ける交換バイアス磁界が正となる厚みを有するように構成されている
ことを特徴とする磁気検出素子。 A pinned layer having a magnetization direction fixed in a certain direction;
A free layer in which the magnetization direction changes according to an external magnetic field, and when the external magnetic field is zero, the magnetization direction is parallel to the magnetization direction of the pinned layer;
A laminate including: an intermediate layer sandwiched between the fixed layer and the free layer;
The magnetic detecting element, wherein the intermediate layer has a thickness such that an exchange bias magnetic field in the magnetization direction of the pinned layer generated between the pinned layer and the free layer is positive.
ことを特徴とする請求項1に記載の磁気検出素子。 The magnetic detection element according to claim 1, wherein the intermediate layer has a thickness of 2.1 nm to 2.5 nm.
外部磁界に応じて磁化方向が変化し、かつ、この外部磁界が零のときに前記磁化方向が
前記固着層の磁化方向と反平行となる自由層と、
前記固着層と前記自由層との間に挟まれた中間層と
を含む積層体を備え、
前記中間層は、前記固着層と前記自由層との相互間に生じる前記固着層の磁化方向にお
ける交換バイアス磁界が負となる厚みを有するように構成されている
ことを特徴とする磁気検出素子。 A pinned layer having a magnetization direction fixed in a certain direction;
A free layer whose magnetization direction changes according to an external magnetic field, and when the external magnetic field is zero, the magnetization direction is antiparallel to the magnetization direction of the pinned layer;
A laminate including: an intermediate layer sandwiched between the fixed layer and the free layer;
The magnetic detection element, wherein the intermediate layer is configured to have a thickness such that an exchange bias magnetic field in the magnetization direction of the pinned layer generated between the pinned layer and the free layer is negative.
ことを特徴とする請求項3に記載の磁気検出素子。 The magnetic detection element according to claim 3 , wherein the intermediate layer is configured to have a thickness of 1.9 nm to 2.0 nm.
ことを特徴とする請求項1から請求項4のいずれか1項に記載の磁気検出素子。 The magnetic detection element according to any one of claims 1 to 4, wherein the intermediate layer is made of copper.
ことを特徴とする請求項1から請求項5のいずれか1項に記載の磁気検出素子。 The magnetic detection element according to any one of claims 1 to 5, wherein the free layer has an easy axis of magnetization parallel to the magnetization direction of the pinned layer.
加するバイアス印加手段を有する
ことを特徴とする請求項1から請求項6のいずれか1項に記載の磁気検出素子。 The magnetism according to any one of claims 1 to 6, further comprising bias applying means for applying a bias magnetic field to the stacked body in a direction orthogonal to the magnetization direction of the pinned layer. Detection element.
ラインのうちのいずれか一方である
ことを特徴とする請求項7に記載の磁気検出素子。 The magnetic detection element according to claim 7, wherein the bias applying unit is one of a permanent magnet or a bias current line extending in a magnetization direction of the pinned layer.
層よりも大きな保磁力を有する第2の強磁性層とを順に形成することにより積層体を形成
する積層工程と、
前記第1および第2の強磁性層の磁化方向が互いに平行となるように規則化を行う規則
化工程とを含み、
前記第1および第2の強磁性層の相互間に生じる前記第2の強磁性層の磁化方向におけ
る交換バイアス磁界が正を示すこととなる厚みを有するように前記中間層を形成し、
前記規則化工程によって、前記外部磁界が零である初期状態における前記第1および第
2の強磁性層の磁化方向の設定を完了する
ことを特徴とする磁気検出素子の形成方法。 Lamination is performed by sequentially forming a first ferromagnetic layer whose magnetization direction changes according to an external magnetic field, an intermediate layer, and a second ferromagnetic layer having a coercive force larger than that of the first ferromagnetic layer. A laminating process for forming a body;
A regularization step of performing regularization so that the magnetization directions of the first and second ferromagnetic layers are parallel to each other,
Forming the intermediate layer so that an exchange bias magnetic field in the magnetization direction of the second ferromagnetic layer generated between the first and second ferromagnetic layers has a thickness that is positive;
The method of forming a magnetic detecting element, wherein the setting of the magnetization directions of the first and second ferromagnetic layers in the initial state where the external magnetic field is zero is completed by the ordering step.
ことを特徴とする請求項9に記載の磁気検出素子の形成方法。 The method for forming a magnetic detection element according to claim 9, wherein the intermediate layer is formed to have a thickness of 2.1 nm to 2.5 nm.
前記第1および第2の強磁性層の磁化方向が前記磁化容易軸と平行となるように規則化
を行う
ことを特徴とする請求項9または請求項10に記載の磁気検出素子の形成方法。 Forming the first ferromagnetic layer to have an easy axis of magnetization;
The method of forming a magnetic sensing element according to claim 9 or 10, wherein the ordering is performed so that the magnetization directions of the first and second ferromagnetic layers are parallel to the easy axis of magnetization.
易軸の方向を設定する
ことを特徴とする請求項11に記載の磁気検出素子の形成方法。 The method of forming a magnetic sensing element according to claim 11, wherein the direction of the easy axis is set by forming the first ferromagnetic layer while applying a magnetic field in a certain direction.
則化を行う
ことを特徴とする請求項11または請求項12に記載の磁気検出素子の形成方法。 Method of forming a magnetic sensing element according to claim 11 or claim 1 2, characterized in that the ordering by annealing while applying a magnetic field in the same direction of the magnetization easy axis.
下の温度でアニール処理を施す
ことを特徴とする請求項13に記載の磁気検出素子の形成方法。 The method for forming a magnetic sensing element according to claim 13, wherein annealing is performed at a temperature of 250 ° C. to 400 ° C. while applying a magnetic field of 1.6 kA / m to 160 kA / m.
層よりも大きな保磁力を有する第2の強磁性層とを順に形成することにより積層体を形成
する積層工程と、
前記第1および第2の強磁性層の磁化方向が互いに反平行となるように規則化を行う規
則化工程とを含み、
前記第1および第2の強磁性層の相互間に生じる前記第2の強磁性層の磁化方向におけ
る交換バイアス磁界が負を示すこととなる厚みを有するように前記中間層を形成し、
前記規則化工程によって、前記外部磁界が零である初期状態における前記第1および第
2の強磁性層の磁化方向の設定を完了する
ことを特徴とする磁気検出素子の形成方法。 Lamination is performed by sequentially forming a first ferromagnetic layer whose magnetization direction changes according to an external magnetic field, an intermediate layer, and a second ferromagnetic layer having a coercive force larger than that of the first ferromagnetic layer. A laminating process for forming a body;
A regularization step of performing regularization so that the magnetization directions of the first and second ferromagnetic layers are antiparallel to each other,
Forming the intermediate layer so that the exchange bias magnetic field in the magnetization direction of the second ferromagnetic layer generated between the first and second ferromagnetic layers has a thickness that is negative;
The method of forming a magnetic detecting element, wherein the setting of the magnetization directions of the first and second ferromagnetic layers in the initial state where the external magnetic field is zero is completed by the ordering step.
ことを特徴とする請求項15に記載の磁気検出素子の形成方法。 The method for forming a magnetic sensing element according to claim 15, wherein the intermediate layer is formed so as to have a thickness of 1.9 nm to 2.0 nm.
前記第2の強磁性層の磁化方向が前記磁化容易軸と平行となり、前記第1の強磁性層の
磁化方向が前記磁化容易軸と反平行となるように規則化を行う
ことを特徴とする請求項15または請求項16に記載の磁気検出素子の形成方法。 Forming the first ferromagnetic layer to have an easy axis of magnetization;
Ordering is performed so that the magnetization direction of the second ferromagnetic layer is parallel to the easy axis and the magnetization direction of the first ferromagnetic layer is antiparallel to the easy axis. A method for forming a magnetic sensing element according to claim 15 or 16.
易軸の方向を設定する
ことを特徴とする請求項17に記載の磁気検出素子の形成方法。 The method of forming a magnetic sensing element according to claim 17, wherein the direction of the easy axis is set by forming the first ferromagnetic layer while applying a magnetic field in a certain direction.
前記磁化容易軸の方向と同一方向に磁界を印加しつつアニール処理を施す第1工程と、
前記磁化容易軸の方向と反対方向に磁界を印加しつつアニール処理を施す第2工程と、
前記磁化容易軸の方向と同一方向に磁界を印加しつつアニール処理を施す第3工程と
を順におこなうことにより規則化をおこなう
ことを特徴とする請求項17または請求項18に記載の磁気検出素子の形成方法。 In the regularization step,
A first step of applying an annealing process while applying a magnetic field in the same direction as the direction of the easy axis;
A second step of applying an annealing process while applying a magnetic field in a direction opposite to the direction of the easy axis;
Magnetic detection according to claim 17 or claim 1 8, characterized in that performing the ordering by performing a third step of applying the annealing treatment in order while applying a magnetic field in the same direction of the magnetization easy axis Element formation method.
つ、250℃以上400℃以下の温度でアニール処理を施す
ことを特徴とする請求項19に記載の磁気検出素子の形成方法。 The annealing process is performed at a temperature of 250 ° C or higher and 400 ° C or lower while applying a magnetic field of 1.6 kA / m or higher and 160 kA / m or lower in the first to third steps. Method for forming a magnetic sensing element.
ことを特徴とする請求項9から請求項20のいずれか1項に記載の磁気検出素子の形成
方法。 The method for forming a magnetic sensing element according to any one of claims 9 to 20, wherein the intermediate layer is formed using copper.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004193735A JP4692805B2 (en) | 2004-06-30 | 2004-06-30 | Magnetic sensing element and method for forming the same |
US11/157,915 US20060002031A1 (en) | 2004-06-30 | 2005-06-22 | Magnetic sensing device and method of forming the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004193735A JP4692805B2 (en) | 2004-06-30 | 2004-06-30 | Magnetic sensing element and method for forming the same |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006019383A JP2006019383A (en) | 2006-01-19 |
JP2006019383A5 true JP2006019383A5 (en) | 2007-03-29 |
JP4692805B2 JP4692805B2 (en) | 2011-06-01 |
Family
ID=35513617
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004193735A Active JP4692805B2 (en) | 2004-06-30 | 2004-06-30 | Magnetic sensing element and method for forming the same |
Country Status (2)
Country | Link |
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US (1) | US20060002031A1 (en) |
JP (1) | JP4692805B2 (en) |
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2005
- 2005-06-22 US US11/157,915 patent/US20060002031A1/en not_active Abandoned
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