JP2006010864A - Local vacuum electron beam exposure method, method for manufacturing stamper original for manufacture of optical recording medium, and local vacuum electron beam exposure device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To manufacture a stamper original for the manufacture of an optical recording medium, while keeping uniformity in the width dimension of a rugged pattern by electron beam exposure of a chemically amplified resist applied to a substrate. <P>SOLUTION: Fluctuations and non-uniformity in dimensions, such as width caused by amines, are preliminarily examined for a rugged pattern, such as pits and grooves formed in a stamper original manufactured under the conditions such as a constant irradiation current of electron beam exposure in a local vacuum electron beam exposure device 1. Then the irradiation currents of electron beam exposure at the positions of starting and finishing of exposure and changes in the current are determined for a chemically amplified resist applied on a substrate 4 constituting the stamper original, based on the result of examination. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a local vacuum electron beam exposure method, a manufacturing method of a stamper master for manufacturing an optical recording medium that can be performed by this exposure method, and a local vacuum electron suitable for carrying out these exposure method and manufacturing method. The present invention relates to a line exposure apparatus.

In the production of a recording medium, for example, a disc-shaped optical recording medium 101 whose schematic top view is shown in FIG. 6, the inversion corresponding to the concave / convex pattern 102 such as tracking grooves and information pits formed on the optical recording medium. A stamper having an uneven pattern is used.
For example, this stamper is used as a molding stamper at the time of injection molding of a substrate of a disk-shaped recording medium, or a disk-shaped recording medium substrate is prepared in advance, and a resin such as an ultraviolet curable resin is applied on the substrate and press-molded. A disc-shaped optical recording medium can be manufactured by using a so-called 2P (Photo Polymerization) method as a pressing stamper.

This stamper manufactures a stamper master having a concavo-convex pattern of the optical recording medium finally obtained or a reverse concavo-convex pattern corresponding to the concavo-convex pattern, and the concavo-convex pattern formed on the master is plated with, for example, Ni (nickel) Can be produced by transferring or repeating the transfer.
In recent years, in the manufacture of stamper masters, there is an increasing tendency to use chemically amplified resists as etching masks for forming irregularities on the substrate constituting the masters (see Non-Patent Document 1, for example).

For example, a positive chemically amplified resist has a property of generating an acid in an irradiated portion by exposure such as electron beam irradiation, and is generated in an irradiated portion by heating by post-exposure baking so-called PEB (Post Exposure Bake). The acid-catalyzed chain reaction with acid proceeds.
Because the acid-catalyzed chain reaction by exposure such as electron beam irradiation changes the solubility of the resist in the developer, the stamper master can be patterned using this.

In the production of this stamper master, the electron beam irradiation is usually performed in the electron beam path because, for example, the mean free path of electrons depends on pressure, and the generation of the electron beam needs to be maintained in an electro-optically stable manner. It is required to stably form a high vacuum condition with a pressure of 10 ⁻³ Pa or less.

  Usually, in response to the demand for maintaining the high vacuum condition, an electron gun (electron source) for obtaining an exposure electron beam, an electron beam exposure apparatus main body 112 having a lens system, and the electron shown in FIG. An all-vacuum type electron beam exposure apparatus 111 in which an exposure object placement portion 113 on which an exposure object to be subjected to electron beam exposure emitted from the line exposure apparatus main body 112 is placed is a high vacuum closed space as a whole. It is used.

  As described above, this all-vacuum electron beam exposure apparatus has a configuration that maintains a high vacuum condition in a closed space. Can be stably maintained. Therefore, even when the exposure takes a long time, it is possible to avoid inconveniences such as the uneven pattern dimension being nonuniform due to the inhibition of the acid catalyst chain reaction by the amine component in the air.

  However, the full-vacuum type electron beam exposure apparatus has a limitation in the size of the stamper master that can be manufactured, that is, the size of the substrate constituting the stamper master, and starts manufacturing the next substrate by taking out the manufactured stamper master. There is a problem that there is a limit to shortening the time required for replacing the substrate. In particular, the substrate exchange time is a particularly serious problem in mass production from the correlation between the time until baking after exposure and the occurrence of a poorly soluble layer in the chemically amplified resist.

To solve this problem, a local vacuum type electron beam exposure apparatus having a schematic configuration shown in FIG. 8 has been proposed (see, for example, Patent Document 1).
In this local vacuum type electron beam exposure apparatus 121, only the electron beam path from the electron beam exposure apparatus main body 121 which is set to a high vacuum is locally maintained at a high vacuum by reducing the pressure around the electron beam exposure apparatus 121. Thus, the exposed object placement portion 123 is opened.

The local vacuum type electron beam exposure apparatus can perform exposure and observation without being restricted by the size of the substrate to be exposed, or the substrate from which the manufactured stamper master is taken out to start manufacturing the next substrate Since it has an advantage that the exchange time can be remarkably shortened as compared with an all-vacuum type electron beam exposure apparatus, it is particularly attracting attention as an electron beam exposure apparatus suitable for mass production.
Jpn.J.appl.Phys.Vol.31 (1992) pp.4294-4300 Part1, No.12B, December 1992 JP 2001-242300 A

  However, when manufacturing a stamper master using a local vacuum type electron beam exposure apparatus, even if the exposure current amount is constant, the time lag from exposure to the post-exposure bake (PEB) on the substrate constituting the stamper master, Due to the presence of an amine component in the air, which is an inhibiting factor for the acid-catalyzed chain reaction, there arises a problem that the size of the concave / convex pattern becomes nonuniform on the inner peripheral side and outer peripheral side of the disc-shaped master.

  In addition, in the local vacuum type electron beam exposure apparatus, the operation direction such as rotation and movement of the rotary stage that supports the substrate can be controlled with high precision using pressure, but high vacuum is locally generated. Nitrogen gas is usually used as an inert gas for the floating of the substrate for stable and smooth operation in the apparatus. However, since this nitrogen gas also causes generation of an amine component that inhibits the acid-catalyzed chain reaction, it becomes more difficult to make the uneven pattern dimension uniform.

  Non-uniformity of the uneven pattern size on the stamper master, for example, is caused by incompatibility with optical recording medium standards for fine patterns such as Blu-ray Disc (BD), and fluctuations in signal characteristics such as asymmetry and modulation factor in the reproduction signal of the optical recording medium. Therefore, it is desirable to reduce as much as possible.

  The present invention is intended to solve the above-described problems in the manufacture of a stamper master for an optical recording medium and local vacuum electron beam exposure that can be applied to this manufacture.

  The local vacuum electron beam exposure method according to the present invention is a local vacuum electron beam exposure method for a chemically amplified resist, characterized in that it changes at least the irradiation current amount of electron beam exposure for the exposure start position and the exposure end position. And

In the local vacuum electron beam exposure method, the present invention is characterized in that the irradiation current amount of the electron beam exposure is gradually changed from the exposure start position toward the exposure end position.
In the local vacuum electron beam exposure method, the present invention is characterized in that the imaging distance of the electron beam exposure is kept constant.
Further, the present invention is characterized in that, in the local vacuum electron beam exposure method, the irradiation current amount of the electron beam exposure is selected based on a result of the electron beam exposure performed previously.

  A manufacturing method of a stamper master for manufacturing an optical recording medium according to the present invention is a method of manufacturing a stamper master for manufacturing an optical recording medium using a local vacuum electron beam exposure apparatus, wherein a chemically amplified resist is applied on a substrate. A resist coating process, and a resist exposure process for exposing the chemically amplified resist coated on the substrate with an electron beam. In the resist exposure process, at least electrons for an exposure start position and an exposure end position It is characterized in that the amount of irradiation current for line exposure is changed.

In the method of manufacturing a stamper master for manufacturing the optical recording medium, the present invention is characterized in that the irradiation current amount of the electron beam exposure is gradually changed from the exposure start position toward the exposure end position. And
In the method of manufacturing a stamper master for manufacturing an optical recording medium, the present invention is characterized in that the imaging distance of the electron beam exposure is maintained constant.
In the method of manufacturing a stamper master for manufacturing the optical recording medium, the present invention is characterized in that the irradiation current amount of the electron beam exposure is selected based on the result of the electron beam exposure performed previously.

  A local vacuum electron beam exposure apparatus according to the present invention is a local vacuum electron beam exposure apparatus that performs electron beam exposure on a chemically amplified resist, and irradiates an electron beam exposure to an exposure start position and an exposure end position of the chemically amplified resist. It is possible to change the amount of current.

In the local vacuum electron beam exposure apparatus according to the present invention, the irradiation current amount of the electron beam exposure can be gradually changed from the exposure start position toward the exposure end position. Features.
Further, the present invention is characterized in that in the local vacuum electron beam exposure apparatus, the imaging distance of the electron beam exposure can be kept constant.
Further, the present invention is characterized in that, in the local vacuum electron beam exposure apparatus, the irradiation current amount of the electron beam exposure can be selected based on the result of the electron beam exposure performed previously. .
According to the present invention, in the local vacuum electron beam exposure apparatus, a control means is provided for automatically controlling a change in the irradiation current amount of the electron beam exposure based on a result of the electron beam exposure performed previously. It is characterized by that.

  As described above, in the local vacuum electron beam exposure method according to the present invention and the method of manufacturing a stamper master for manufacturing an optical recording medium, in the exposure with the electron beam to the chemically amplified resist, selection of the electron beam exposure dose is Of course, since the exposure amount with respect to the exposure start position and the exposure end position is changed, the uniformity of the width dimension of the uneven pattern after development can be ensured.

  That is, in the method of the present invention, for example, a basic substance derived from nitrogen, such as an amine, in a concavo-convex pattern such as pits and grooves formed on a stamper master for manufacturing an optical recording medium manufactured with a constant irradiation current amount of electron beam exposure, for example. In the resist exposure process in which electron beam exposure is performed on the chemically amplified resist applied on the substrate constituting the stamper master based on the results of the examination in advance, for example, the dimensions and width variations and non-uniformity caused by The irradiation current amount of electron beam exposure with respect to the exposure start position and the exposure end position and the change thereof are selected.

  That is, by grasping the relationship between the irradiation current amount and the concavo-convex dimensions such as pits and grooves, the irradiation current amount of the electron beam exposure for the exposure start position and the exposure end position is determined, for example, from an inner peripheral side to an outer peripheral side. It can be optimized by gradually changing with the irradiation current amount at each radial position when performing scanning exposure, and this allows time for electron beam scanning, that is, drawing and subsequent PEB (Post Exposure Bake). Even in such a case, it is possible to ensure the uniformity of the width dimension of the concavo-convex pattern by correcting in advance the width variation of the concavo-convex pattern.

In addition, the local vacuum electron beam exposure apparatus according to the present invention can ensure the uniformity of the width dimension of the concavo-convex pattern after development by performing exposure on the chemically amplified resist.
That is, along with the change in the amount of current, along with the change in the excitation of the condenser lens in the local vacuum electron beam exposure apparatus, the focus position of the electron beam passing through this is adjusted by adjusting the objective lens, and the imaging distance of the electron beam exposure is For example, it is possible to manufacture a stamper master for manufacturing a recording medium whose entire recording surface conforms to a recording medium standard such as Blu-ray Disc (BD) by maintaining the stamper master for optical recording medium constant. It can be done.

  Furthermore, in the local vacuum electron beam exposure apparatus according to the present invention suitable for carrying out the above-described exposure method and manufacturing method, the change in the irradiation current amount of the electron beam exposure is based on the result of the electron beam exposure performed previously. By adopting a configuration provided with a control means that automatically controls the optical recording medium, for example, it is possible to mass-produce an optical recording medium having good recording / reproduction characteristics in conformity with a recording medium standard such as BD with a high yield, etc. According to the configuration of the present invention, important and many effects can be brought about.

  Hereinafter, embodiments of a local vacuum electron beam exposure method, a stamper master for manufacturing an optical recording medium, and a local vacuum electron beam exposure method according to the present invention will be described with reference to the drawings. The present invention is not limited to the embodiment.

FIG. 1 is a block diagram of an example of a local vacuum electron beam exposure apparatus suitable for carrying out a local vacuum electron beam exposure method and a method of manufacturing a stamper master for manufacturing an optical recording medium according to the present invention. It is a block diagram of the principal part.
The local vacuum electron beam exposure apparatus 1 in this embodiment mainly includes an electron beam exposure apparatus main body irradiation unit 2, a control unit 8, a support 3 for an electron beam exposure object, in this example, an optical recording medium. It has a substrate 4 constituting a stamper master for manufacturing and a differential flying head 5.

FIG. 2 is a schematic configuration diagram illustrating the electrode configuration of the local vacuum electron beam exposure apparatus 1.
The substrate 4 is made of, for example, a glass substrate that constitutes an electron irradiated body having a chemically amplified resist coated on the surface thereof by spin coating, for example, a stamper master for producing an optical recording medium. The support 4 is arranged on a moving stage that moves in two orthogonal directions along a plane orthogonal to the electron beam optical axis, and scans and draws the electron beam from the electron beam exposure apparatus main body 2 on the resist. It is made to be able to.

The electron beam exposure apparatus body 2 includes a so-called EB column 12 in which an electrode for obtaining an electron beam is formed.
FIG. 3 shows a schematic configuration diagram of an example of the electrode configuration. The electron source 12a emits electrons, for example, first and second condenser lenses 12b1 and 12b2, an aperture 12b, an objective aperture 12c, Electron beam emission having an intermediate lens 12d, a blanking plate 12e, a blanking stop 12f, a blanking plate 12g, an objective lens 12h and the like, and formed on the tip of the EB column 12 on the axis of the column 12 An electron beam is emitted from the hole 51.

  The electrons emitted from the electron source 12a are focused by the condenser lenses 12b1 and 12b2 to form a first crossover point. Since the intensity of the electron beam is determined by the electron density, the amount of electrons can be adjusted using the objective aperture 12c by adjusting the opening angle of the condenser lens 12b.

  The condenser lenses 12b1 and 12b2 are focusing lenses, which are located under the electron gun, that is, the electron source 12a, and adjust the beam current control for adjusting the brightness of the secondary electron image to be observed and the reduction rate of the electron source. It is a lens for. In order to focus the electron probe on the sample with the objective lens 12h, the crossover of the electron beam is imaged at an appropriate position, and the reduction rate of the electron source is adjusted by adjusting the intensity of the lens to control the beam current. Has been used.

  Subsequently, the electron beam that has passed through the objective aperture 12c forms a second crossover point at the blanking aperture 12f by the intermediate lens 12d. Around the crossover point, a blanking diaphragm 12f is disposed so as to be sandwiched between the blanking plate 12e and the blanking plate 12g, and an electron beam is shaken against the blanking diaphragm 12f. The electron beam can be turned on and off.

  Then, for example, the electron source 12a is not strictly a point light source by the objective lens 12h, and therefore, correction is performed to prevent the image formation point on the substrate 2 from being displaced when the opening angle of the condenser lens 12b changes. To prevent defocusing.

  The differential exhaust levitation head 5 is kept airtight with the EB column 12 by an expansion / contraction coupling mechanism 6 such as a bellows, and can move slightly up and down along the axis of the EB column 12.

  Further, for example, as shown in FIG. 2, the exhaust levitation head 5 has an electron beam transmission hole 52 facing the electron beam emission hole 51 disposed on the axis of the EB column 12. And the gas supply port which has the 1st and 2nd gas suction opening 53 and 54 opened to the board | substrate 2 arrange | positioned at the outer periphery of the support body 7, ie, an electron beam irradiation body, and the 2nd gas suction port 53, and the ventilation pad 55 56 are intermittently arranged on respective concentric circles centering on the central axis of the differential exhaust flying head 5.

These first and second gas suction ports 53 and 54 can obtain a high degree of vacuum through a vent hole passing through the inside of the differential exhaust flying head 7, for example, 10 ⁻ such as a cryopump, a turbo molecular pump, and an ion sputtering pump. ^It is connected to an evacuation means having a vacuum capacity of ⁸ Pa, and each evacuation is performed to evacuate the electron beam path to about 1 × 10 ⁻⁴ Pa.

With respect to the degree of vacuum at the gas suction ports 53 and 54, the suction port located closer to the electron beam transmission hole 52 performs higher vacuum exhaust. For example, in the example shown in the figure, an exhaust means that can obtain a vacuum degree of the first gas suction port 53 of about 1 × 10 ⁰ Pa and a second gas suction port 54 of about 1 × 10 ² Pa can be obtained. Connect.

On the other hand, a compressed gas supply source is connected to a gas supply port 56 provided with a ventilation pad 55 as a static pressure levitation means through a ventilation hole passing through the differential exhaust levitation head 5. This compressed gas is supplied at 5 × 10 ⁵ Pa, for example.
As this gas, it is desirable to use nitrogen or an inert gas and lightweight helium (He), neon (Ne), and argon (Ar).

  In this configuration, the differential exhaust levitation head 7 is brought into contact with the suction from the first and second gas suction ports 53 and 54 and the selection of the gas supply from the gas supply port 56, that is, due to the differential pressure between them. From the surface of the substrate 4 opposed to the electron beam irradiator, it floats at an interval of several μm, for example, 5 μm, that is, is opposed to contact.

  At the same time, a vacuum seal is made by suction or exhaust from the gap space between the differential exhaust floating head 5 and the electron beam irradiation body, that is, the substrate 2 by the first and second gas suction ports 53 and 54, The electron beam passage in the region surrounded by the broken line c in the vicinity of the electron beam transmission port 52 inside the arrangement portion of the intake ports 53 and 54 is evacuated.

  By using the local vacuum electron beam drawing apparatus 1 as described above, the photoresist layer on the substrate 4 is exposed to a required pattern, thereby producing a stamper master for manufacturing an optical recording medium, ie, mastering. Do.

Using the local vacuum electron beam exposure apparatus 1 having this configuration, first, manual data for obtaining exposure conditions is obtained.
The irradiation current value range used for drawing is measured by a PCD (probe current detector) by changing the voltage value for controlling the first and second condenser lenses 12b1 and 12b2, and the condenser lens. Changes in voltage values for controlling 12b1 and 12b2 are registered (manually) as manual data via an EOS (Electron Optical System) server in a control unit 8 such as a computer having a GUI (Graphical User Interface).

  After that, remove the PCD, make it possible to observe the alignment pattern with various patterns engraved, and input again the voltage value of the condenser lens measured above, and the alignment pattern is clear corresponding to each voltage value The current value for performing the focusing operation with respect to the objective lens 12h is registered in the control unit 8 in the same manner so that it can be observed.

Next, from the obtained plurality of manual data, for example, the correlation between the irradiation current value and the focus current value of the objective lens 12h is obtained, for example, by obtaining a calibration curve.
Then, based on this correlation, that is, a calibration curve, a pre-scan is performed on the substrate 4 of another stamper master, and the previously obtained correlation and alignment pattern are confirmed.

This is because the imaging point of the intermediate lens changes when the current value is adjusted to change the excitation of the condenser lens, and the adjustment position is selected so that the crossover point is on the blanking stop.
Further, since the imaging point of the objective lens also changes depending on the current, it is desirable to grasp this correspondence and conditions.

Thereafter, a desired irradiation current value for the exposure start position and the exposure end position, and an exposure range such as a drawing time or a disk radius from the start to the end of exposure are input.
Based on this input data, the condenser lens control voltage value with respect to the irradiation current value is automatically calculated from the previously obtained calibration curve. At the same time, the CL control voltage and the OL control current are set to the exposure range such as the drawing time and the disk radius. Scanning exposure for drawing a stamper master, that is, drawing, is started by dividing according to the number of bits subjected to / D conversion.
By performing these functions automatically, it is possible to ensure the uniformity of the width dimension of the uneven pattern formed on the stamper master from the exposure start position to the exposure end position, and the CL control voltage value until the end of exposure. And the OL control current value can also be confirmed on the GUI.

  With such a configuration, in a concavo-convex pattern such as pits and grooves formed on the stamper master, a study is made in advance on dimensions and width variations and non-uniformity caused by nitrogen-derived basic substances such as amines. Based on the examination results, in the resist exposure process by electron beam exposure for the chemically amplified resist coated on the substrate 4 constituting the stamper master, the irradiation current amount of the electron beam exposure for the exposure start position and the exposure end position, and The change can be selected.

  Therefore, by grasping the relationship between the irradiation current amount and the concave and convex dimensions such as pits and grooves, the irradiation current amount of the electron beam exposure for the exposure start position and the exposure end position is determined, for example, from an inner peripheral side to an outer peripheral side. Since it can be gradually changed and optimized with the amount of irradiation current at each radial position when performing scanning exposure, even when it takes time to perform electron beam scanning, that is, drawing and subsequent PEB (Post Exposure Bake), It is possible to ensure the uniformity of the width dimension of the concavo-convex pattern by correcting in advance the width variation of the concavo-convex pattern.

  Then, the electron beam exposure imaging is performed by adjusting the focus position of the electron beam passing through the objective lens along with the change in the current amount, that is, along with the change in the excitation of the condenser lens in the local vacuum electron beam exposure apparatus according to the present invention. The distance can be kept constant with respect to, for example, a stamper master for manufacturing an optical recording medium.

  Local vacuum electron beam exposure method according to the present invention, manufacturing method of stamper master for manufacturing optical recording medium, optical recording medium manufactured using stamper master for manufacturing optical recording medium manufactured by local vacuum electron beam apparatus, and conventional The results of comparative study of characteristics with other optical recording media will be described.

  First, the stamper master manufactured by the manufacturing method of the present invention used for this comparative study will be described. An Si substrate having a diameter of 8 inches and a thickness of 0.725 mm is prepared, and an electron beam chemically amplified resist (EEP171 manufactured by Fuji Film Arch Co., Ltd.) is applied to the surface of the Si substrate at a thickness of 70 nm. After exposure at an acceleration voltage of 15 kV using a linear exposure apparatus, PEB treatment is performed at 110 ° C. for 90 seconds, and development is performed with an organic alkali developer (NMD-3, manufactured by Tokyo Ohka Kogyo Co., Ltd.) for 15 seconds to provide unevenness on the Si substrate. A pattern was formed.

  The exposure by the apparatus of the present invention is started by forming a concavo-convex pattern with a track pitch of 320 nm at a drawing linear velocity of 1.788 m / s, and setting the positions of the radius 24 mm and the radius 60 mm of the disk-shaped substrate 4 as the exposure start position and the exposure end position, respectively. The probe current was decreased from 12.5 nA to 11.4 nA from the end to the end, and a stamper master for an optical recording medium corresponding to a recording capacity of 25 GB was manufactured using the Blu-ray Disc modulation method 17PP.

Using this stamper master, an uneven recording pattern was transferred by injection molding or press molding by the 2P method to produce an optical recording medium, and the characteristics of the optical recording medium were compared.
FIG. 4 shows the relationship between the drawing time and the width of the concavo-convex pattern in an optical recording medium using a stamper master manufactured by the manufacturing method of the present invention and a conventional optical recording medium.
In both 2T (shortest pit within standard) and 8T (longest pit within standard) optical recording media (with compensation) obtained by the manufacturing method of the present invention, the pit width due to the drawing time, that is, the lapse of time from the start of exposure. It can be seen that the fluctuation is reduced by about half compared to the conventional optical recording medium.

FIG. 5 shows the relationship between the radial distance of a disk-shaped optical recording medium and signal reproduction characteristics in an optical recording medium using a stamper master manufactured by the manufacturing method of the present invention and a conventional optical recording medium.
In both the jitter and asymmetry characteristics, the optical recording medium using the stamper master manufactured by the manufacturing method of the present invention shows a stable value over the entire surface of the disk as compared with the conventional optical recording medium. I was able to confirm.

  As described above, the embodiments of the local vacuum electron beam exposure method, the manufacturing method of the stamper master for manufacturing the optical recording medium, and the local vacuum electron beam apparatus according to the present invention have been described, but the present invention is not limited thereto. Absent.

  For example, in the above-described embodiment, the change in the irradiation current amount of the electron beam exposure is automatically controlled by the control means using the GUI based on the exposure result for the stamper master for manufacturing another optical recording medium. As explained above, changes in the amount of irradiation current for electron beam exposure are controlled based on the exposure result of the exposure target that is earlier in the electron beam exposure, including the irradiation start position, in the amount of irradiation current for the same stamper master. It is also possible to take a configuration to

It is a schematic block diagram which shows an example of the local vacuum electron beam exposure apparatus by this invention. It is an enlarged block diagram which shows an example of the local vacuum electron beam exposure apparatus by this invention. It is a schematic block diagram which shows the structure of an example of the irradiation part of the local vacuum electron beam exposure apparatus by this invention. It is a schematic diagram which shows the width fluctuation of the uneven | corrugated pattern in the local vacuum electron beam exposure method by this invention, and the conventional electron beam exposure method. It is a schematic diagram which shows the measurement result of the signal reproduction | regeneration characteristic in the local vacuum electron beam exposure method by this invention, and the conventional electron beam exposure method. It is a schematic top view which shows the structure of a disk-shaped optical recording medium. It is a schematic block diagram which shows the structure of the conventional full vacuum type electron beam exposure apparatus. It is a schematic block diagram which shows the structure of the conventional local vacuum type | mold electron beam exposure apparatus.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Local vacuum electron beam exposure apparatus, 2 ... Electron beam exposure apparatus main body, 3 ... Support body, 4 ... Substrate of optical recording medium stamper master, 5 ... Differential exhaust floating head, DESCRIPTION OF SYMBOLS 6 ... Telescopic coupling mechanism, 8 ... Control part, 12 ... EB column, 51 ... Electron beam emission hole, 52 ... Electron beam transmission hole, 53 ... 1st gas suction port 54 ... Second gas suction port, 55 ... Ventilation pad, 56 ... Gas supply port, 101 ... Optical recording medium, 102 ... Uneven pattern, 111 ... All vacuum electron Line exposure apparatus, 112... Electron beam exposure apparatus main body, 113... Exposed object placement unit, 121... Local vacuum type electron beam exposure apparatus, 122. Exposed object placement section

Claims (13)

A local vacuum electron beam exposure method for chemically amplified resist,
A local vacuum electron beam exposure method characterized by changing an irradiation current amount of electron beam exposure for at least an exposure start position and an exposure end position.   2. The local vacuum electron beam exposure method according to claim 1, wherein an irradiation current amount of the electron beam exposure is gradually changed from the exposure start position toward the exposure end position.   3. The local vacuum electron beam exposure method according to claim 1, wherein an imaging distance of the electron beam exposure is kept constant.   3. The local vacuum electron beam exposure method according to claim 1, wherein an irradiation current amount of the electron beam exposure is selected based on a result of the electron beam exposure performed previously. A method of manufacturing a stamper master for manufacturing an optical recording medium using a local vacuum electron beam exposure apparatus,
A resist coating step of applying a chemically amplified resist on the substrate, and a resist exposure step of exposing the chemically amplified resist applied on the substrate with an electron beam,
A method of manufacturing a stamper master for manufacturing an optical recording medium, wherein, in the resist exposure step, at least an irradiation current amount of electron beam exposure with respect to an exposure start position and an exposure end position is changed.   6. The method of manufacturing a stamper master for manufacturing an optical recording medium according to claim 5, wherein the irradiation current amount of the electron beam exposure is gradually changed from the exposure start position toward the exposure end position.   7. The method for manufacturing a stamper master for manufacturing an optical recording medium according to claim 5, wherein the imaging distance of the electron beam exposure is kept constant.   7. The method of manufacturing a stamper master for manufacturing an optical recording medium according to claim 5, wherein an irradiation current amount of the electron beam exposure is selected based on a result of the electron beam exposure performed previously. A local vacuum electron beam exposure apparatus that performs electron beam exposure on a chemically amplified resist,
A local vacuum electron beam exposure apparatus characterized in that an irradiation current amount of electron beam exposure with respect to an exposure start position and an exposure end position of a chemically amplified resist can be changed.   10. The local vacuum electron beam exposure apparatus according to claim 9, wherein the irradiation current amount of the electron beam exposure can be gradually changed from the exposure start position toward the exposure end position. .   11. The local vacuum electron beam exposure apparatus according to claim 9, wherein the imaging distance of the electron beam exposure can be kept constant.   11. The local vacuum electron beam exposure apparatus according to claim 9, wherein the irradiation current amount of the electron beam exposure can be selected based on a result of the electron beam exposure performed previously.   The local vacuum according to claim 9 or 10, further comprising control means for automatically controlling a change in the irradiation current amount of the electron beam exposure based on a result of the electron beam exposure performed previously. Electron beam exposure device.

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