JP2006001647A - Container, packaging member, container manufacturing method, packaging member manufacturing method and compound semiconductor substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a container restricting any deterioration in electric characteristic of a semiconductor device manufactured through application of a compound semiconductor substrate after stored, and also to provide a packaging member, a method for manufacturing these elements, and a compound semiconductor substrate stored by these containers and packaging members. <P>SOLUTION: There are provided a container used for storing a compound semiconductor substrate in which an including amount of tin is 1 ppm or less, and a container used for storing the compound semiconductor substrate in which an including amount of silicon is 1 ppm or less. There is also provided a packaging member for use in storing the compound semiconductor substrate in which an including amount of tin is 1 ppm or less. Further, the present invention discloses a method for manufacturing the aforesaid containers, and the packaging member, and the compound semiconductor substrate stored by the aforesaid containers and the packaging member. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a container, a package, a method for manufacturing a container, a method for manufacturing a package, and a compound semiconductor substrate.

  Conventionally, polypropylene containers have been mainly used as containers used for storing and transporting compound semiconductor substrates. The reason why polypropylene containers have been used as containers for such compound semiconductor substrates is that i) is inexpensive, and ii) is dusty because it has a higher strength than polyethylene containers, which are similarly inexpensive. Iii) There are relatively few impurities contained in the resin, and iv) It is soft compared to hard containers such as those made of polycarbonate or PEEK (Poly-Ether-Ether-Ketone). For example, the compound semiconductor substrate can be more effectively prevented from being damaged by external impact or from being scratched by the compound semiconductor substrate.

  Polypropylene containers, for example, graft polypropylene and silane compounds (silicon-containing organic compounds) obtained by polymerizing propylene gas in the presence of alkylaluminums such as triethylaluminum and titanium-based catalysts such as titanium trichloride. After grafting the graft polymer obtained by the conversion reaction, it is crosslinked by contacting with water in the presence of a silanol condensation catalyst (tin-containing organic compound) such as dibutyltin dilaurate (DBTDL) or tributyltin dilaurate (TBTDL). It can manufacture by doing (for example, refer patent document 1 or patent document 2).

  Moreover, the compound semiconductor substrate accommodated in the container is usually stored or transported while being accommodated in the package. As such a package, for example, a laminate in which an outer nylon film having moderate strength and an inner polyethylene film for heat sealing is laminated in two layers is used, which suppresses moisture and oxygen permeation. (For example, refer to Patent Document 3 or Patent Document 4). That is, after packaging a container containing a compound semiconductor substrate, the package body is heat-sealed, so that the compound semiconductor substrate housed in the container is housed in the package body in a sealed state.

In such a package, the nylon film and the polyethylene film are bonded by a polyester-based adhesive, and an organic compound containing tin, zinc, titanium, or the like is often used for the adhesive.
JP 59-115351 A JP-A-2-166106 JP 2002-274594 A JP 2003-175906 A

  However, when this conventional container or package is used, abnormal electrical characteristics may occur from the outer periphery of a semiconductor device in which a high-resistance semiconductor layer is epitaxially grown on the surface of the compound semiconductor substrate after storage. . This abnormality in electrical characteristics has been found to occur due to aging of the compound semiconductor substrate, and is particularly likely to occur in semiconductor devices using compound semiconductor substrates that have been stored for a long period of time.

  In view of the above circumstances, an object of the present invention is to provide a container, a package, and a method for manufacturing the same that can suppress deterioration of electrical characteristics of a semiconductor device manufactured using a compound semiconductor substrate after storage. In addition, another object of the present invention is to provide a compound semiconductor substrate accommodated by these containers and packages.

  The present invention is a container used for housing a compound semiconductor substrate, wherein the tin content in the container is 1 ppm or less.

  Moreover, this invention is a container used in order to accommodate a compound semiconductor substrate, Comprising: Silicon content in a container is a container which is 1 ppm or less.

  Moreover, this invention is a package used in order to accommodate a compound semiconductor substrate, Comprising: It is a package whose content of tin in a package is 1 ppm or less.

  In addition, the present invention is a package used for housing a compound semiconductor substrate, the package includes a plurality of layers, the plurality of layers includes at least one layer for suppressing permeation of tin, It is a package in which the tin content of the entire inner layer of the layers that suppress permeation is 1 ppm or less.

  Further, the present invention is a method for producing a container, comprising: a step of sorting a resin composition; and a step of forming a container using the sorted resin composition. is there.

  Moreover, this invention is a method of manufacturing said package, Comprising: It is the manufacturing method of a package including the process of classifying a sheet | seat, and the process of forming a package using the selected sheet | seat. .

  Furthermore, the present invention is a compound semiconductor substrate that is housed in at least one selected from the group consisting of the above-described container and the above-described package and is placed in a nitrogen atmosphere.

  The “tin content” in the present invention is converted to the mass of simple tin when tin is contained in the form of a tin compound such as an organic tin compound in the container and / or package of the present invention. Is calculated. Further, the “content of tin” in the present invention means that tin is contained in the container and / or package of the present invention when both tin and a tin compound such as an organic tin compound are contained in the form of tin. It is calculated by the sum of the mass of the simple substance and the mass calculated by converting the tin compound into a simple substance of tin.

  Further, the “silicon content” in the present invention is also calculated in terms of the mass of silicon alone when silicon is contained in the form of a silicon compound in the container and / or package of the present invention. In the case where silicon is contained in the form of both silicon and silicon compound in the container and / or package, the total of the mass of silicon and the mass calculated by converting silicon compound to silicon alone Is calculated by

  In the present invention, “inside” means the side where the compound semiconductor substrate accommodated when the compound semiconductor substrate is accommodated in the container and / or package of the present invention, and “outside” Means the side opposite to the side where the compound semiconductor substrate accommodated when the compound semiconductor substrate is accommodated in the container and / or package of the present invention.

  According to the present invention, a container, a package and a manufacturing method thereof, which can suppress deterioration of electrical characteristics of a semiconductor device manufactured using a compound semiconductor substrate after storage, and further, these containers, a package An accommodated compound semiconductor substrate can be provided.

  Embodiments of the present invention will be described below. In the drawings of the present application, the same reference numerals denote the same or corresponding parts.

  The container of the present invention is a container used for housing a compound semiconductor substrate, and is characterized in that the tin content in the container is 1 ppm or less. By using the container in which the tin content is controlled in this way, it is possible to suppress deterioration of the electrical characteristics of the semiconductor device using the compound semiconductor substrate stored in the container and stored for a long time.

  For example, when a container consists of a polypropylene resin composition, the organic tin compound contained in the container moves between polypropylene molecular chains and bleeds to the inner surface of the container. And the organic tin compound adheres on the surface of a compound semiconductor substrate when the inner surface of the container which the organic tin compound bleed and the surface of a compound semiconductor substrate contact. Thus, when a semiconductor device is manufactured by laminating a high resistance semiconductor layer at a high temperature of about 600 ° C. on the surface of the compound semiconductor substrate to which the organic tin compound is adhered, tin produced by decomposition of the organic tin compound is produced. May penetrate into the high resistance semiconductor layer. In a semiconductor device including a high-resistance semiconductor layer in which tin has entered, current leaks from the high-resistance semiconductor layer and electrical characteristics of the semiconductor device deteriorate.

  Therefore, as a result of intensive studies by the present inventor, even if the compound semiconductor substrate is housed in the container and stored for a long period of time by setting the tin content in the container to 1 ppm or less of the mass of the container, the electricity of the semiconductor device It was found that the characteristics did not deteriorate. The organotin compound is contained in the polypropylene resin composition as an additive such as an antistatic agent or a catalyst mixed in the production process of the polypropylene resin composition, for example, when the container is made of a polypropylene resin composition. It is thought.

  The container of the present invention is preferably prepared as follows. First, a lot containing a plurality of pellets made of a polypropylene resin composition is prepared. Next, after the powder obtained by pulverizing some of the pellets contained in this lot with a pulverizer is dissolved in sulfuric acid, the content of tin in the pellets is measured by ICP (inductively coupled plasma) emission analysis. And the content of tin in the measured pellet is converted into the content of tin per one container of the present invention, and a lot whose converted value is 1 ppm or less is selected. Finally, the container of the present invention can be produced by molding the selected lot in the known lot by a known molding method such as injection molding.

  In addition, depending on the structure of the semiconductor device and the conditions for forming the high-resistance semiconductor layer formed on the surface of the compound semiconductor substrate, it may be assumed that not silicon but silicon is a problem. Also in this case, for the same reason as in the case of tin described above, it is considered that the deterioration of the electrical characteristics of the semiconductor device can be suppressed if the silicon content is 1 ppm or less of the mass of the container. Here, the content of silicon is also calculated in the same manner as in the case of tin, and the container of the present invention in which the content of silicon is 1 ppm or less is the same as in the case of the above tin. In conversion to the content of tin per container of the invention, a lot whose conversion value is 1 ppm or less is selected and formed.

  In addition, polypropylene is contained in the polypropylene resin composition which can be used for this invention. Here, as the polypropylene, for example, a homopolymer of polypropylene, a copolymer of propylene and an α-olefin having 2 to 20 carbon atoms other than propylene, or a mixture thereof is used. Examples of the α-olefin include ethylene, 1-butene, 1-pentene, and 1-hexene. Examples of the copolymer include a binary copolymer and a ternary copolymer of propylene and α-olefin.

  In addition, the polypropylene resin composition is preferably composed of the above-described polypropylene mixed with at least an organic peroxide and a silane compound and a graft polymer obtained by grafting reaction with a silanol condensation catalyst containing tin. This is because a container with improved properties such as heat resistance, strength, or rigidity can be produced by exposing a polypropylene resin composition mixed with such a silanol condensation catalyst to a water atmosphere after molding.

  Here, examples of the organic peroxide include 1,1-bis (t-butylperoxy) 3,3,5-trimethylcyclohexane, t-butylperoxyisopropyl carbonate, and 2,2-bis (t-butylperoxide). Oxy) butane, t-butylperoxybenzoate, dicumyl peroxide or 2,5-dimethyl-2,5-di (t-butylperoxy) hexane is used. The mixing amount of the organic peroxide is preferably 0.05 to 1 part by mass with respect to 100 parts by mass of polypropylene.

  As the silane compound, for example, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltriacetoxysilane, or γ-methacryloyloxypropyltrimethoxysilane is used. The mixing amount of the silane compound is preferably 1 to 20 parts by mass with respect to 100 parts by mass of polypropylene.

  As the silanol condensation catalyst, for example, dibutyltin dilaurate, tributyltin dilaurate, dibutyltin diacetate, dibutyltin dioctoate, or the like is used.

  In addition, it goes without saying that additives such as pigments, fillers, antistatic agents, flame retardants and anti-aging agents may be appropriately mixed in the polypropylene resin composition.

  In FIG. 1, the typical perspective view of a preferable example of the container of this invention is shown. In this container 1, the compound semiconductor substrate 2 is accommodated by closing the cover part 1b after installing the compound semiconductor substrate 2 in the support part 1a of the container 1. FIG. Here, the support portion 1a has a concave shape with a depressed central portion, and the compound semiconductor substrate 2 is supported by a part of the outer peripheral portion of the compound semiconductor substrate 2 coming into contact with the support portion 1a.

  FIG. 2 shows a schematic perspective view of another preferred example of the container of the present invention. In the container 1, the compound semiconductor substrate 2 is accommodated by placing the compound semiconductor substrate 2 on the support 1 a of the container 1, placing the pressing member 3 on the compound semiconductor substrate 2, and then closing the lid 1 b. Again, the support portion 1a has a concave shape with a depressed central portion, and the compound semiconductor substrate 2 is supported by the entire outer periphery of the compound semiconductor substrate 2 being in contact with the support portion 1a.

  FIG. 3 shows a schematic perspective view of still another preferred example of the container of the present invention. In the container 1, a part of the outer periphery of the compound semiconductor substrate 2 is supported by the container 1, and a plurality of compound semiconductor substrates 2 are accommodated.

  The container of the present invention preferably has a structure that does not contact the surface of the compound semiconductor substrate as much as possible so as to avoid contamination of the surface of the compound semiconductor substrate from the organic tin compound bleed on the inner surface of the container. Therefore, it is preferable that the container of the present invention is generally used in such a manner that only a part of the outer peripheral portion of the compound semiconductor substrate is stored in contact with the container.

  In addition, it cannot be overemphasized that the form of the container of this invention is not restricted to the form shown in said FIG. 1 to FIG.

  The package of the present invention is a package used for housing a compound semiconductor substrate, and is characterized in that the content of tin in the package is 1 ppm or less.

  FIG. 8 shows a schematic cross-sectional view of a preferred example of a form in which the package of the present invention houses a compound semiconductor substrate. In FIG. 8, the package 4 has a two-layer structure of an inner polyethylene film layer 5 and an outer nylon film layer 6. The package 4 is accommodated in a container 1 made of, for example, a polypropylene resin composition. A compound semiconductor substrate 2 is accommodated. And the inside of this package 4 is kept airtight by the polyethylene film layers 5 being bonded together by heat sealing.

  Here, the polyethylene film layer 5 and the nylon film layer 6 constituting the package 4 are bonded to each other by, for example, a polyester-based adhesive, and the adhesive contains an organic tin compound as a curing reaction accelerator. There is. The organotin compound moves between polyethylene molecular chains in the polyethylene film layer 5 and bleeds on the inner surface of the polyethylene film layer 5. Then, the organic tin compound adheres to the outer surface of the container 1 when the inner surface of the polyethylene film layer 5 bleeded with the organic tin compound and the outer surface of the container 1 come into contact with each other. Subsequently, the organotin compound attached on the outer surface of the container 1 moves between the polypropylene molecular chains of the container 1 and bleeds to the inner surface of the container 1.

  Next, the organic tin compound adheres to the surface of the compound semiconductor substrate 2 by contacting the inner surface of the container 1 bleeded with the organic tin compound with the surface of the compound semiconductor substrate 2. As described above, when a semiconductor device is manufactured by laminating a high resistance semiconductor layer at a high temperature of about 600 ° C. on the surface of the compound semiconductor substrate 2 to which the organic tin compound is adhered, the organic tin compound is decomposed. It is considered that the tin thus produced enters the high-resistance semiconductor layer, current leaks from the high-resistance semiconductor layer, and the electrical characteristics of the semiconductor device deteriorate.

  Therefore, for example, even when the compound semiconductor substrate is housed in a container having a tin content of 1 ppm or less, if the tin content in the package for packaging the container is more than 1 ppm, these containers and the package The deterioration of electrical characteristics of a semiconductor device using a compound semiconductor substrate stored for a long period of time cannot be sufficiently suppressed. Therefore, the deterioration of the electrical characteristics of the semiconductor device can be effectively suppressed by setting the tin content in the package to 1 ppm or less.

  In the above description, the case where the organotin compound on the inner surface of the package of the present invention adheres to the outer surface of the container and then bleeds to the inner surface of the container and adheres to the surface of the compound semiconductor substrate has been described. It is also conceivable that the organic tin compound on the inner surface of the substrate directly adheres to the surface of the compound semiconductor substrate.

  The package of the present invention is preferably produced as follows. First, a sheet raw material in which a nylon film and a polyethylene film are bonded with a polyester adhesive is prepared. Next, a sheet is cut out from the sheet, and a powder obtained by pulverizing the cut sheet with a pulverizer is dissolved in sulfuric acid, and then ICP (inductively coupled plasma) emission analysis is performed to measure the tin content in the sheet. . Then, the content of tin in the measured sheet is converted into the content of tin per one package of the present invention, and the sheet raw material cut out from the sheet whose converted value is 1 ppm or less is selected, The package of the present invention is formed using the selected sheet raw sheet. In the present invention, the form of the package is not particularly limited.

  FIG. 9 shows a schematic enlarged cross-sectional view of a part of another preferred example of the package of the present invention. Here, the package 4 of the present invention is composed of an inner layer 7 and an outer layer 8, and the inner layer 7 and the outer layer 8 are bonded together with an adhesive. And the content of tin in the inner layer 7 is 1 ppm or less, and the outer layer 8 is a layer that suppresses permeation of tin. By adopting such a configuration, not only the penetration of tin from the outside of the package 4 can be suppressed, but also the content of tin in the inner layer 7 is 1 ppm or less, so that the inner surface of the inner layer 7 Even if the compound semiconductor substrate is stored for a long time with the surface of the compound semiconductor substrate and / or the outer surface of the container containing the compound semiconductor substrate in contact, the electrical characteristics of the semiconductor device using the compound semiconductor substrate after storage Can be prevented.

  Here, as the outer layer 8 that suppresses permeation of tin, for example, a nylon film or a polyethylene terephthalate film can be used. Further, as the inner layer 7, for example, a polyethylene film that is a material that can be bonded by heat sealing from the viewpoint of sealing and storing the compound semiconductor substrate can be used.

  The outer layer 8 may be composed of not only a single layer but also a plurality of layers. When the outer layer 8 is composed of a plurality of layers, at least one of them is a layer that suppresses permeation of tin (hereinafter referred to as “tin permeation suppression”). Layer)). In this case, all the layers inside the innermost tin permeation suppression layer may be the inner layer 7 and the tin content in the inner layer 7 may be 1 ppm or less. Note that the inner layer 7 may be composed of not only a single layer but also a plurality of layers.

  The compound semiconductor substrate accommodated by the container and / or package of the present invention is preferably placed in a nitrogen atmosphere. In this case, not only can foreign substances such as tin and silicon enter from the outside and adhere to the surface of the compound semiconductor substrate, but also the change over time of the compound semiconductor substrate tends to be suppressed. . Therefore, the semiconductor layer can be epitaxially grown on the surface of the compound semiconductor substrate of the present invention without cleaning the compound semiconductor substrate of the present invention. In the present invention, the inside of the container and / or package may be in a nitrogen atmosphere, and the compound semiconductor substrate may be installed in a nitrogen atmosphere.

  Examples of the compound semiconductor substrate of the present invention include a GaAs (gallium arsenide) substrate, InP (indium phosphide) substrate, GaN (gallium nitride) substrate, and AlN (aluminum nitride) substrate.

Example 1
After mixing 0.5 parts by mass of dicumyl peroxide and 10 parts by mass of γ-methacryloyloxypropyltrimethoxysilane with 100 parts by mass of powdered polypropylene, this is supplied to an extruder and kneaded at a temperature of 180 ° C. The grafting reaction was carried out.

  Next, the graft polymer obtained by the grafting reaction was molded into pellets, and a masterbatch in which dibutyltin dilaurate was mixed with 100 parts by mass of the polypropylene at a ratio of 9: 1 to an extruder. By supplying and mixing, lots each containing a plurality of pellets made of five types of polypropylene resin compositions having different tin contents were obtained.

  Then, after collecting a part of the pellets from each of the five types of lots, each of these pellets was pulverized by a pulverizer, the powder was dissolved in sulfuric acid, and then the tin in each lot was analyzed by ICP emission analysis. The content was measured. Thereafter, five types of molded articles having the shape of the container 1 shown in FIG. 2 were obtained by injection molding using pellets accommodated in the five types of lots. These molded bodies were immersed in water at 100 ° C. for 3 hours, and sample No. 1-5 containers were made.

  Sample No. A GaAs substrate having a diameter of 4 inches was accommodated in each of the containers 1 to 5 without using the pressing member 3 shown in FIG. 2, and stored for 3 months under the same conditions. Here, the outer peripheral portion of the GaAs substrate was in contact with the surface of the container. Then, a high-resistance GaAs layer having a thickness of 500 nm was stacked on each GaAs substrate surface using the MBE method (molecular beam epitaxy method) with the surface temperature of the GaAs substrate being 600 ° C. Subsequently, a wafer having a HEMT (High Electron Mobility Transistor) structure was formed by stacking Si-doped n-type AlGaAs layers having a thickness of 50 nm using the MBE method.

  Then, the sheet resistance was measured for each of these wafers, and the electrical characteristics were evaluated according to the following evaluation criteria. The results are shown in Table 1. As shown in Table 1, sample No. 1 with a tin content of 1 ppm was used. For a wafer using a GaAs substrate housed in one container, the variation in sheet resistance on the wafer surface was 2% or less. Sample No. with a tin content of more than 1 ppm was used. For wafers using GaAs substrates housed in 2-5 containers, it was confirmed that the variation in sheet resistance on the wafer surface was between 20% and 30%.

  This is because the high resistance GaAs layer is laminated at a high temperature of 600 ° C. with the organic tin compound attached on the surface of the GaAs substrate, so that tin or the like produced by the decomposition of the organic tin compound becomes the high resistance GaAs layer. It is considered that the sheet resistance on the wafer surface was lowered. The tin content shown in Table 1 is a value obtained by converting the tin content in the pellets measured by the ICP emission analysis into the tin content per container.

  Here, sample No. Since the containers 1 to 5 are not molded under the condition that tin enters, the content of tin shown in Table 1 is the sample No. 1 after molding. It is thought that it is the same as the content of tin in the containers 1-5. Sample No. having the shape shown in FIG. Evaluation of electrical characteristics using the containers 1 to 5 is the most severe one in which the entire outer periphery of the surface of the GaAs substrate is stored in contact with the surface of the container. It is thought that it is applied to.

<Evaluation criteria>
Good: Variation in sheet resistance on wafer surface is 2% or less Defective: Variation in sheet resistance on wafer surface is larger than 2% Note that variation in sheet resistance on wafer surface is the standard deviation of sheet resistance on wafer surface. It was calculated by dividing by the average value of the sheet resistance.

  FIG. 4 shows an example of the measurement result of the sheet resistance on the wafer surface with good evaluation of the electrical characteristics, and FIG. 5 shows an example of the measurement result of the sheet resistance on the wafer surface with poor evaluation of the electrical characteristics. Show. Here, the variation in sheet resistance on the wafer surface shown in FIG. 4 was 1.55%, and the variation in sheet resistance on the wafer surface shown in FIG. 5 was 21.61%. Further, when the measurement results of the sheet resistance on the wafer surface shown in FIGS. 4 and 5 were compared, it was confirmed that there were many locations with low sheet resistance on the outer periphery of the wafer shown in FIG. Therefore, it is considered that the organic tin compound adhering to the outer peripheral portion of the surface of the GaAs substrate that was in contact with the container entered the high-resistance GaAs layer laminated on the surface of the GaAs substrate.

  In addition, the above sample No. A GaAs substrate was housed in a container having the shape shown in FIG. 2 obtained by molding a polypropylene resin composition having a tin content of 15 ppm using the same production method as that of container 3, and stored for 3 years. Then, impurities adhering to the surface of the GaAs substrate after storage were analyzed by TXRF (total reflection X-ray fluorescence analysis). The results are shown in Table 2. As shown in Table 2, tin was not detected at the center of the surface of the GaAs substrate, but tin was detected at the outer periphery.

FIG. 6 shows the measurement results of TOF-SIMS (time-of-flight secondary ion mass spectrometry) at the center of the surface of the GaAs substrate, and FIG. 7 shows the measurement results of TOF-SIMS at the outer periphery of the surface of the GaAs substrate. Indicates. Comparing the measurement results of TOF-SIMS shown in FIG. 6 and FIG. 7, as shown in FIG. 7, fragments of tin (Sn) and butyl tin (C ₄ H ₉ Sn) are present at the outer periphery of the surface of the GaAs substrate. Was confirmed.

(Example 2)
Seven types of sheet raw materials in which a nylon film having a thickness of 25 μm and a polyethylene film having a thickness of 30 μm were bonded to each of seven kinds of polyester adhesives having different contents of the organic tin compound were prepared. And by cutting out the sheet from each of these seven types of sheet raw materials, by dissolving the powder obtained by pulverizing the cut sheet with a pulverizer in sulfuric acid and performing ICP emission analysis, the content of tin in these sheets is determined. Each was measured.

  Next, a sheet was cut out from each of these seven types of sheet raw materials, and sample No. 6-12 packaging bodies were produced. Then, a GaAs substrate having a diameter of 4 inches was accommodated in a container 1 having a shape shown in FIG. 2 having a tin content of 1 ppm in a nitrogen atmosphere without using the pressing member 3 shown in FIG. And sample no. Sample Nos. 6 to 12 were made so that all the inner surfaces of the packages were in close contact with the outer surface of the container. The GaAs substrate was hermetically sealed by packaging with 6 to 12 packaging bodies and heat-sealing the peripheral portions of these packaging bodies.

  Then, the sample No. with the GaAs substrate sealed. 6-12 packages were stored for 1 year in this state. Then, a high resistance GaAs layer having a thickness of 500 nm was laminated on the surface of each GaAs substrate after storage using the MBE method (molecular beam epitaxy method) with the surface temperature of the GaAs substrate being 600 ° C. Subsequently, a wafer having a HEMT (High Electron Mobility Transistor) structure was formed by stacking Si-doped n-type AlGaAs layers having a thickness of 50 nm using the MBE method.

  Then, the electrical characteristics of the wafer were evaluated based on the following evaluation criteria from the photoluminescence emission intensity at the peripheral edge of the wafer surface and the photoluminescence emission intensity of the entire wafer surface, which was generated by irradiating the entire wafer surface with light. evaluated. The results are shown in Table 3. Note that the photoluminescence emission intensity at the peripheral portion of the wafer surface is an average value of photoluminescence emission intensities at arbitrary four points on the peripheral portion of the wafer surface.

<Evaluation criteria>
Defective ... The photoluminescence emission intensity at the peripheral portion of the wafer surface is less than twice the average value of the photoluminescence emission intensity of the entire wafer surface ... Other than the above-mentioned defect evaluation As shown in Table 3, tin content Sample No. with more than 1 ppm. In a wafer manufactured using a GaAs substrate stored in a package of 10 to 12 and stored for one year in a nitrogen atmosphere, the photoluminescence emission intensity at the peripheral edge of the wafer surface is the photoluminescence emission of the entire wafer surface. It was less than twice the average intensity. Therefore, sample no. When packaged in 10-12 packages, the photoluminescence emission intensity at the peripheral edge of the wafer surface is considerably different from the average value of the photoluminescence emission intensity over the entire wafer surface. An abnormality is expected to occur.

  On the other hand, Sample No. with a tin content of 1 ppm or less. For wafers fabricated using GaAs substrates housed in packages 6-9 and stored for one year in a nitrogen atmosphere, sample no. Compared with the case of 10-12, the photoluminescence light emission intensity in the peripheral part of the wafer surface was not far from the average value of the photoluminescence light emission intensity of the whole wafer surface. Therefore, sample no. When it is stored in a package of 6 to 9, it is considered that the peripheral portion of the wafer surface has stable electrical characteristics, and thus it is considered that the occurrence of abnormal electrical characteristics can be suppressed.

  The tin content shown in Table 3 is the same as the sample No. in the tin content in the sheet measured by the ICP emission analysis. It is the value converted into content of tin per 6-12 package bodies. Moreover, since Example 2 was performed under the harshest conditions in which all the inner surfaces of the package were stored in close contact with the outer surface of the container, it is considered that the second embodiment can be applied to all other forms of packages. . Further, in the current semiconductor industry, there is almost no production of a semiconductor device using a compound semiconductor substrate that has been stored for one year, so that the results shown in Example 2 are sufficiently industrially significant. Conceivable.

  It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  The present invention is suitably used for a container and a package used for storing and transporting a compound semiconductor substrate. When a semiconductor device is manufactured using a compound semiconductor substrate stored for a long time using the container and / or package of the present invention, it is possible to suppress the occurrence of abnormal electrical characteristics of the semiconductor device.

It is a typical perspective view of a preferable example of the container of the present invention. It is a typical perspective view of other preferable examples of the container of the present invention. It is a typical perspective view of another preferable example of the container of the present invention. It is a figure which shows an example of the measurement result of the sheet resistance of the wafer surface where evaluation of an electrical property is favorable. It is a figure which shows an example of the measurement result of the sheet resistance of the wafer surface where evaluation of an electrical property is unsatisfactory. It is the measurement result of TOF-SIMS in the surface center part of the GaAs substrate stored for 3 years in the container obtained by shape | molding the polypropylene resin composition whose content of tin is 15 ppm. It is the measurement result of TOF-SIMS in the outer peripheral part of the surface of the GaAs substrate stored for 3 years in the container obtained by shape | molding the polypropylene resin composition whose content of tin is 15 ppm. It is typical sectional drawing of a preferable example of the form with which the package of this invention accommodated the compound semiconductor substrate. It is a typical expanded sectional view of a part of another preferable example of the package of the present invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Container, 1a support part, 1b cover part, 2 compound semiconductor substrate, 3 pressing member, 4 packaging body, 5 polyethylene film layer, 6 nylon film layer, 7 inner layer, 8 outer layer

Claims (7)

  A container used for housing a compound semiconductor substrate, wherein a tin content in the container is 1 ppm or less.   A container used for housing a compound semiconductor substrate, wherein the silicon content in the container is 1 ppm or less.   A package used for housing a compound semiconductor substrate, wherein a tin content in the package is 1 ppm or less.   A package used for housing a compound semiconductor substrate, wherein the package includes a plurality of layers, and the plurality of layers includes at least one layer that suppresses permeation of tin, and suppresses permeation of the tin. The package body characterized in that the content of tin in the entire inner layer of the inner layers is 1 ppm or less.   A method for producing a container according to claim 1 or 2, comprising a step of selecting a resin composition and a step of forming the container using the selected resin composition. Method.   A method for producing a package according to claim 3, comprising a step of sorting sheets and a step of forming the package using the sorted sheets. .   The container according to claim 1, the container according to claim 2, the package according to claim 3, and the package according to claim 4, and stored in at least one kind selected from the group consisting of Compound semiconductor substrate installed in

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