JP2005353824A - Device and method for cleaning electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device and a method for cleaning electronic device by which the decomposition of liquid chemicals can be prevented to the utmost and the exclusively used area can be reduced. <P>SOLUTION: The device for cleaning electronic device has a spin base (substrate placing base) 10 on which a silicon wafer (substrate) W is placed, a first discharge opening 17a from which a first liquid chemical L<SB>1</SB>prepared by only dissolving a first solvent is discharged toward the silicon wafer W, and a second discharge opening 18a from which a second liquid chemical L<SB>2</SB>prepared by only dissolving a second solvent different from the first solvent is discharged toward the silicon wafer W. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an electronic device cleaning apparatus and a cleaning method.

  Electronic devices such as LSI (Large Scale Integrated Circuit), PDP (Plasma Display Panel), and LCD (Liquid Crystal Display) are made by laminating various films, and some films have a cleaning process after or before formation. Is done. Cleaning devices used in the cleaning process are broadly divided into single-wafer type and batch type. Of these, the batch type has the advantage of being able to process multiple substrates at the same time, but the area occupied by the device becomes large. There is an inconvenience. For this reason, in recent years, a compact single-wafer type cleaning apparatus having a smaller exclusive area than the batch type is favorably used, and examples of such apparatuses are shown in FIG. 1 of Patent Document 1 and FIG. ).

  In such an apparatus, it is rare to perform cleaning with only a chemical solution having a single composition, and usually a mixture of a plurality of chemical solutions is used as the cleaning solution. For example, Patent Document 1 discloses that various chemicals can be added to ozone water in paragraph 0021. And in patent document 2, in FIG. 4, it is disclosed that a some chemical | medical solution is mixed with an injection | pouring valve | bulb.

  Further, although not explicitly disclosed in Patent Documents 1 and 2, when mixing a plurality of types of chemical solutions as described above, a tank called a buffer tank may be provided in order to eliminate concentration unevenness of the obtained cleaning liquid. . FIG. 1 is a configuration diagram of a buffer tank provided in a cleaning device according to a conventional example.

  As shown in FIG. 1, the buffer tank 1 is connected to first and second pipes 3 and 4 through which the chemical solutions A and B supplied from the facility (factory) side are individually guided. The cleaning liquid 7 obtained by mixing each of the chemical liquids A and B is free from uneven density while circulating through the third pipe 5 and the buffer tank 1 by the pump 6 and has a uniform concentration. The uniformized chemical solution 7 is supplied to the cleaning device main body 8 through the fourth pipe 2 connected to the buffer tank 1.

  Since such a buffer tank 1 is required to facilitate maintenance, the buffer tank 1 is provided away from the cleaning device body 8 to such an extent that a sufficient space is secured between the cleaning device body 8 and a human hand. .

In a semiconductor factory, a region where chemicals, gas, electric power, and the like are supplied is called a facility side. Equipment that is provided between the facility side and the apparatus main body 8 to assist the operation of the apparatus 8 is called incidental equipment. The buffer tank 1 described above is a kind of such incidental equipment.
JP 2001-77069 A Japanese Patent No. 3274389

  By the way, in the system using FIG. 1 of Patent Document 1, FIG. 4A of Patent Document 2, and the buffer tank 1 of FIG. 1, all of them prepared a cleaning liquid by mixing a plurality of chemical liquids, and then the cleaning liquid is silicon. Supplied to a wafer or the like.

  However, in such a method, since the distance and time from when the chemical solution is mixed to when the chemical solution is supplied to the silicon wafer is long, depending on the type of the chemical solution used, the chemical solution is decomposed in the cleaning solution and the chemical solution is mixed. There is a possibility that the concentration of the cleaning liquid may fluctuate depending on when it is supplied to the silicon wafer. Therefore, in these methods, it is necessary to control the concentration by adding an extra chemical solution at regular time intervals in anticipation of the chemical solution being decomposed, but this increases the amount of the chemical solution to be used. It is not efficient.

  Further, when the buffer tank 1 is used as shown in FIG. 1, the exclusive area of the incidental equipment in the clean room becomes large, so that the advantage of the single-wafer apparatus that the exclusive area is small cannot be brought out sufficiently.

  The objective of this invention is providing the washing | cleaning apparatus and washing | cleaning method of an electronic device which can prevent decomposition | disassembly of a chemical | medical solution as much as possible and can make an exclusive area small.

  According to one aspect of the present invention, a substrate mounting table on which a substrate is mounted, a first discharge port that discharges a first chemical solution obtained by dissolving only a first solvent toward the substrate, and the first solvent. There is provided an electronic device cleaning device having a second discharge port for discharging a second chemical solution, which is obtained by dissolving only a second solvent of a different type, toward the substrate.

  According to the present invention, instead of mixing a plurality of chemical solutions using a buffer tank as in the prior art, the first and second discharges dedicated to each of the first and second chemical solutions composed of a single chemical solution. Since the outlet is provided and these chemicals are mixed on the substrate, the area occupied by the apparatus can be reduced by the amount of buffer tank that has been conventionally required, and the space in the clean room can be afforded. Further, since a pump for operating the buffer tank is not required, the power for driving the pump can be reduced, and the running cost of the cleaning device can be reduced as compared with the conventional case.

  Moreover, it is preferable to use ozone water as said 1st chemical | medical solution, and to use an acidic solution or an alkaline solution as a 2nd chemical | medical solution.

  When ozone water is used in this way, a cleaning liquid is prepared by mixing the ozone water and an acidic solution in a buffer tank as in the prior art, so that while the cleaning liquid is circulating in the buffer tank, As a result, the ozone concentration of the liquid becomes lower, and the cleaning liquid is not changed into a simple acidic solution. On the other hand, in the present invention, ozone water and acidic solution are not mixed in the buffer tank, but are separately discharged onto the substrate and mixed on the substrate, so that the ozone concentration in the cleaning liquid is unlikely to decrease. Thus, the substrate can be cleaned while controlling the etching rate with an oxide film formed on the substrate by the strong oxidizing power of ozone water.

  Moreover, the ozone water can be reliably decomposed in the waste liquid treatment device because the ozone concentration in the ozone water automatically decreases as time elapses after the cleaning is completed, and the ozone concentration in the ozone water automatically decreases. A harmful liquid containing ozone water is prevented from flowing out into the environment where humans live, and cleaning that is more environmentally friendly can be performed.

  Such an advantage is also obtained when an alkaline solution is used as the first solution instead of the oxidizing solution.

  Furthermore, a control unit may be provided in the cleaning device, and under the control of the control unit, the first chemical liquid made of ozone water may be discharged first, and then the second chemical liquid may be discharged. In this way, an oxide film is formed in advance on the substrate by the oxidizing power of ozone water, and the etching rate is suppressed by the oxide film, so that the etching rate is prevented while preventing the substrate from being etched excessively. It becomes easier to control.

  Moreover, according to another viewpoint of this invention, the 1st chemical | medical solution which melt | dissolves only a 1st solvent and the 2nd chemical | medical solution which melt | dissolves only a 2nd solvent different from the said 1st solvent, respectively, Provided is a method for cleaning an electronic device, characterized in that the first chemical liquid and the second chemical liquid are mixed on the substrate by discharging the liquid onto the substrate from different discharge ports, and the substrate is cleaned. Is done.

  According to the present invention, a buffer tank that has been conventionally used is no longer necessary, so that a space in the clean room can be provided, and the cost required for cleaning can be reduced by the amount of power of the buffer tank that is no longer needed. .

  Moreover, when using ozone water as a 1st chemical | medical solution and using an acidic solution or an alkaline solution as a 2nd chemical | medical solution, while preventing the fall of the ozone concentration on a board | substrate as demonstrated above, ozone water The substrate can be cleaned while controlling the etching rate with an oxide film formed on the substrate with a strong oxidizing power.

  The substrate to be cleaned is a semiconductor substrate or a glass substrate on which at least one of a silicon dioxide layer, a silicon nitride layer, a silicon layer, a metal oxide layer, a silicon carbide layer, and a compound semiconductor layer such as SiGe is formed. There is.

  According to the electronic apparatus cleaning apparatus of the present invention, the first and second chemical liquids are separately discharged onto the substrate from the first and second discharge ports, respectively. The area can be reduced, the space in the clean room can be given a margin, and the running cost of the apparatus can be reduced.

  Furthermore, by using ozone water as the first chemical and using an acidic solution or alkaline solution as the second chemical, the oxidation formed on the substrate by the strong oxidizing power of ozone water while preventing the ozone concentration from decreasing. The substrate can be cleaned while controlling the etching rate with the coating. Moreover, since the ozone concentration of ozone water automatically decreases after the cleaning is completed, the ozone water can be reliably decomposed in the waste liquid treatment apparatus, and environmentally friendly cleaning can be performed.

  Further, according to the electronic device cleaning method of the present invention, since the buffer tank is unnecessary, the space in the clean room can be afforded, and the cost required for cleaning by the amount of power of the buffer tank that has become unnecessary is reduced. Can be reduced.

  Then, by using ozone water as the first chemical solution and using an acidic solution or alkaline solution as the second chemical solution, the oxidation formed on the substrate by the strong oxidizing power of ozone water while preventing a decrease in ozone concentration. The substrate can be cleaned by controlling the etching rate with the coating.

  The best mode for carrying out the present invention will be described below in detail with reference to the accompanying drawings.

(1) 1st Embodiment FIG. 2: is a block diagram of the washing | cleaning apparatus which concerns on the 1st Embodiment of this invention. FIG. 3 is a top view of the cleaning apparatus.

  The cleaning apparatus shown in FIG. 2 is a single wafer cleaning apparatus for processing silicon wafers (substrates) W to be cleaned one by one. The cleaning apparatus includes a spin base (substrate mounting table) 10 fixed to a first shaft 11, and the spin base 10 is in contact with the back surface of the silicon wafer W and includes a silicon wafer W and a spin base 10. A plurality of restricting pins 14 are provided to secure a space therebetween. A plurality of guide pins 13 that hold the silicon wafer W by being urged by a spring (not shown) or the like are erected on the spin base 10 outside the regulation pins 14. The material of the spin base 10 is not particularly limited, but is preferably a material excellent in chemical resistance such as PFA (tetrafluoroethylene perfluoroalkoxyethylene copolymer).

  The first shaft 11 is rotationally driven by the driving force of the first motor 16 transmitted by the belt 15, and a first internal pipe 20 through which pure water or a chemical solution flows is inserted into the first shaft 11. The first internal pipe 20 is provided apart from the inner wall of the first shaft 11, and the space between them functions as the first gas flow passage 30. The first gas flow passage 30 communicates with a first gas supply unit 33 that is a supply source of an inert gas such as nitrogen gas, and the inert gas that has passed through the first gas flow passage 30 is formed on the silicon wafer W. Sprayed on the back surface, whereby the back surface of the silicon wafer W is dried.

Above the spin base 10, a first chemical liquid L ₁ made of ozone water in which only ozone is dissolved as a first solvent is ejected toward the silicon wafer W, and a second chemical liquid L described later. _{A second} discharge port 18a through which 2 is discharged toward the silicon wafer W is arranged.

  Each discharge port 17a, 18a is constituted by the tip part of the 1st, 2nd piping 17 and 18, among which the 1st piping 17 is connected to ozone water production device 24. In the ozone water production device 24, ozone water having a concentration of 3 to 100 ppm (mg / l) is produced by exposing pure water to ozone, and the flow rate of the ozone water is adjusted and supplied to the first pipe 17. . The flow rate of the ozone water is adjusted by a liquid MFC (Mass Flow Controller) in the ozone water production apparatus 24. The temperature of the ozone water is adjusted by a first temperature adjusting unit 36 such as a heat exchanger or a heater provided in the middle of the first pipe 17.

  The ozone water production apparatus 24 may be installed either in the clean room or on the lower floor of the clean room. However, if the ozone water production device 24 is installed in the clean room, the first pipe 17 is shortened, and the ozone water can be prevented from being decomposed in the middle of the first pipe 17. Furthermore, when ozone is supplied on the facility side, the ozone water production apparatus 24 may be omitted.

On the other hand, the second pipe 18 is connected to the chemical solution supply cabinet 25. The chemical solution supply cabinet 25 has a tank 25 a in which the second chemical solution L ₂ is stored, and supplies the second chemical solution to the second pipe 18 by adjusting the flow rate L ₂ of the second chemical solution. In addition, a second temperature adjusting unit 37 such as a heat exchanger or a heater is provided in the middle of the second pipe 18, thereby adjusting the temperature of the second chemical liquid L ₂ .

In this manner rather than providing a chemical supply cabinet 25, connecting the second pipe 18 on the facility side, it may be supplied directly to the second chemical liquid L ₂ from the facility side. In that case, in order to prevent the flow fluctuation in the second pipe 18, it is preferable to provide the second pipe 18 with an air valve or a flow rate adjustment valve capable of adjusting the pressure in the pipe.

The second chemical liquid L ₂ is formed by dissolving only a second solvent different from the first solvent (ozone) of the first chemical liquid L ₁ , and may be either an acidic solution or an alkaline solution. Examples of the acidic solution include a stock solution of hydrochloric acid, sulfuric acid, and nitric acid, or a solution obtained by diluting the stock solution with pure water. Here, the stock solution refers to a solution itself purchased from a manufacturer, that is, a solution in an undiluted state. Examples of the alkaline solution include a stock solution of ammonia water, a TMAH (tetramethylammonium hydroxide) aqueous solution, and a choline (trimethyl (2-hydroxyethyl) ammonium hydroxide) aqueous solution, or a solution obtained by diluting the stock solution with pure water. .

The chemical solution supply cabinet 25 is connected with the third pipe 26 for supplying the second chemical solution L ₂ to the first internal pipe 20 described above, and the middle portion of the third pipe 26 is supplied from the facility side. fourth pipe 27 is connected through the pure water L _w being. A switching valve 28 is provided at a connection point between the third pipe 26 and the fourth pipe 27, and either the pure water _Lw or the second chemical liquid L ₂ is supplied to the first internal pipe 20 by the switching valve 28. Or they are stopped.

  When pure water or a second chemical solution is supplied to the first internal pipe 20, these liquids are discharged from the fourth discharge port 20 a configured at the tip of the first internal pipe 20, thereby the silicon wafer W. The back of the is cleaned.

Further, a second shaft 12 that can be rotated by the driving force of the second motor 23 and a blocking plate 21 fixed thereto are provided above the first and second discharge ports 17a and 18a. A second internal pipe 19 connected to the fifth pipe 22 is inserted into the second shaft 12, and the silicon wafer W is connected to the third discharge port 19 a formed by the tip of the second internal pipe 19. Pure water _Lw is discharged toward The pure water _Lw is supplied from the facility side, and after the temperature is adjusted by the temperature adjusting unit 35, the flow rate is adjusted by the flow rate adjusting unit 34 such as MFC and supplied to the fifth pipe 22.

  The second internal pipe 19 is provided to be separated from the inner wall of the second shaft 12, and the space between them functions as the second gas flow passage 31. The second gas flow passage 31 communicates with a second gas supply section 32 that is a supply source of an inert gas such as nitrogen, and the inert gas that has passed through the second gas flow passage 31 is on the surface of the silicon wafer W. Is injected into.

  The blocking plate 21 can be moved up and down, and can approach the surface of the silicon wafer W. In this approach, as shown in the top view of FIG. 3, the first and second pipes 17 and 18 rotate about the respective shafts 17b and 18b, and the discharge ports 17a and 18a By retracting out of the spin base 10, the interference between the respective shielding plates 21a and 18a and the blocking plate 21 is prevented.

Refer to FIG. 2 again. Among the members described above, the rotation speeds of the first and second motors 16 and 23 are controlled by control signals S ₅ and S ₄ from the control unit 29. In addition to this, the control unit 29 controls the flow rate and temperature of the first chemical liquid L ₁ supplied from the ozone water production apparatus 24 by the control signal S ₁ . Also, the chemical liquid supply cabinet 25 is also controlled by the control unit 29, and the second chemical liquid L ₂ flow rate and temperature are controlled by a control signal S _2. Further, the flow control unit 34 and the temperature control unit 35 of the pure water L _w is also controlled by the control signals S _3, S ₆ from the control unit 34.

  Next, a method for cleaning an electronic device using the cleaning device shown in FIG. 2 will be described.

  FIG. 4 is a cross-sectional view schematically showing the cleaning method according to the present embodiment, and FIG. 5 is a timing chart showing the timing of the liquid discharged from the first to third discharge ports 17a to 19a.

In order to perform cleaning, first, as shown in FIG. 4A, the first and third outlets are rotated according to the timing shown in FIG. 5 in a state where the spin base 10 is rotated at a rotational speed of about several tens to 1000 rpm. 17a, respectively by ejecting first liquid medicine L ₁ and pure water L _w from 19a, it starts the ozone water treatment.

As shown in FIG. 5, in the ozone water treatment, a first chemical liquid L ₁ and pure water L _w is discharged to the silicon wafer W made of ozone water, the surface of the silicon wafer W by a strong oxidizing power of ozone water A thin silicon dioxide film (not shown) is formed. The ozone concentration in the ozone water (first chemical liquid L ₁ ) at this time is not particularly limited, but is preferably about 20 to 90 ppm. The flow rate of the first and second chemicals L ₁ and L ₂ is preferably about 0.5 to 3 Litter / min. Further, first, since in some cases the effect of cleaning is increased by heating the second chemical liquid L _1, L _2, the first, the temperature of the liquid medicine L _1, L ₂ by the second temperature adjusting unit 36, 37 It is preferable to heat to about 30-80 degreeC.

  At this time, in order to perform the ozone water treatment uniformly in the surface of the silicon wafer W, the first discharge port 17a is rotated from the center of the silicon wafer W toward the periphery thereof with the shaft 17b (see FIG. 2) as the center. It may be moved.

After such an ozone water treatment 5 to 20 seconds, as shown in FIG. 4 (b), starts a further cleaning process by discharging a second chemical liquid L _2. In this cleaning process, similarly to the ozone water process, the first and second discharge ports 17a and 18a are rotated from the center of the silicon wafer toward the periphery around the shafts 17a and 18b. It is preferable to perform the cleaning process uniformly in the plane.

Also, when using hydrochloric acid as the second chemical liquid L _2, it is preferable to use a concentration of 0.5 to 5 wt% hydrochloric acid, the flow rate of about 0.5~3Litter / min approximately, the temperature 30 to 80 It is preferable to set to about ° C.

On the other hand, when ammonia water is used as the second chemical liquid L ₂ , it is preferable to use ammonia water having a concentration of 0.2 to 5 wt%, the flow rate is about 0.5 to 3 Litter / min, and the temperature is 25. It is preferable to set the temperature to about 80 ° C.

In such a cleaning process, the second chemical liquid L ₂ and the first chemical liquid L _{1 made of} ozone water are mixed on the silicon wafer W, and a cleaning liquid made of these mixed liquids is generated on the silicon wafer W. When using hydrochloric acid as the second chemical liquid L ₂ is a mixture of hydrochloric acid and ozone water is generated as the cleaning liquid. Hereinafter, the mixed solution is referred to as HOM (Hydrochloride Ozone-water Mixture). Also, when using aqueous ammonia as a second chemical liquid L ₂ is a mixture of ammonium hydroxide and ozone water is generated as the cleaning liquid. Hereinafter, the mixed solution is referred to as AOM (Ammonium hydroxide Ozone-water Mixture). In the cleaning process, the surface of the silicon wafer W is slightly etched by such HOM and AOM, and contaminants such as metal particles attached to the surface are removed.

  At this time, since an extremely thin silicon dioxide layer (oxide film) is formed on the surface of the silicon wafer W by the ozone treatment performed previously, excessive etching by HOM and AOM is prevented, and the silicon wafer W in the cleaning process is prevented. It becomes easy to control the etching rate.

Next, the discharge of the second chemical liquid L ₂ is stopped, performing a rinsing process according to the first chemical liquid L ₁ and pure water L _w consisting ozone water. After washing away the cleaning liquid on the silicon wafer W sufficiently such rinsing the performed approximately 10 to 60 seconds, to stop the discharge of the first chemical liquid L ₁ and pure water L _w.

Subsequently, as shown in FIG. 4C, after the first and second discharge ports 17a and 18a are retracted from the spin base 10, the blocking plate 19 is moved by the second motor 23 (see FIG. 2). , The shielding plate 19 is brought close to the silicon wafer W, and nitrogen gas (N ₂ ) is sprayed from the first gas flow line 30 toward the silicon wafer W. As a result, since a narrow space between the silicon wafer W and the blocking plate 19 is filled with nitrogen gas, the reaction between residual moisture and silicon is suppressed, and the formation of a watermark on the surface of the silicon wafer W is prevented. However, the silicon wafer W is dried. Further, by rotating the shielding plate 19 in the same direction as the spin base 10, it becomes difficult for the atmosphere to enter between the shielding plate 19 and the spin base, and the formation of the watermark is more effectively prevented.

  Thus, the cleaning of the silicon wafer W is completed.

In the present embodiment, the timing at which the first chemical liquid L ₁ , the second chemical liquid L ₂ , and the pure water _Lw are discharged is not limited to that shown in FIG. 5, but is the timing shown in FIGS. May be.

Among them, the example of FIG. 6A is obtained by omitting the ozone water treatment of FIG. Films that are difficult to etch by HOM or AOM, such as silicon nitride layers, and films that have already been oxidized, such as silicon dioxide layers, are excessively etched in the cleaning process even if ozone water treatment is omitted. The entire process can be simplified by omitting the ozone water treatment. The first chemical liquid L ₁ of the case, the concentration of the second chemical liquid L _2, and pure water L _w, flow rate, and, temperature, processing time is the same as described in FIG.

On the other hand, in the example of FIG. 6B, the cleaning process is performed by alternately discharging the second chemical liquid L ₂ and the first chemical liquid L _{1 made of} ozone water. At this timing, the chemical liquids L ₁ and L ₂ are not discharged at the same time, but the silicon wafer W mixes these chemical liquids L ₁ and L ₂ and generates HOM and AOM as described above. There is no particular deterioration. In this case, the number of times each of the liquid chemicals L ₁ and L ₂ is discharged is not particularly limited, and can be arbitrarily programmed by the control unit 29 (see FIG. 1).

Further, in the examples of FIGS. 5 and 6, the first chemical liquid L ₁ made of ozone water and the pure water L _w are simultaneously discharged to perform the rinsing process. However, either the first chemical liquid L ₁ or the pure water L _w is used. Rinse processing may be performed by discharging only one of them.

According to the present embodiment described above, each of the first and second chemical liquids L ₁ and L _{2 made} of a chemical liquid having a single composition is used instead of mixing a plurality of chemical liquids using a buffer tank as in the prior art. Are provided with dedicated discharge ports 17a and 18a, and these chemical solutions are mixed on the silicon wafer W.

  As a result, the area occupied by the apparatus can be reduced by the amount of buffer tanks required conventionally, and a space in the clean room can be provided. Further, since a pump for operating the buffer tank is not required, the power for driving the pump can be reduced, and the running cost of the cleaning device can be reduced as compared with the conventional case.

  By the way, cleaning liquids generally used in semiconductor factories include hydrochloric acid overwater (HPM) and ammonia perwater (APM). These cleaning solutions use hydrogen peroxide as an oxidizing agent to prevent excessive etching by forming a thin silicon dioxide layer on the silicon wafer W, and this hydrogen peroxide is mixed with hydrochloric acid or ammonia. Produced.

  However, in order to make it easier to control the etching, a stronger oxidizing agent than hydrogen peroxide water, for example, ozone water is used, and the ozone water is mixed with hydrochloric acid or ammonia water so that the above-mentioned HOM or AOM is added. It is preferably used as a cleaning liquid.

  However, as a result of investigation by the inventors of the present application, it has been clarified that the ozone concentration extremely decreases while the HOM and AOM are circulating in the conventional buffer tank. For example, an HOM made of ozone water with an ozone concentration of 100 ppm has been reduced to about 10 ppm by simply circulating in the buffer tank. In this way, if HOM or AOM is made in a buffer tank, the ozone concentration is lowered and it is no different from just hydrochloric acid or ammonia water. Therefore, if the buffer tank is used as in the prior art, the advantage of HOM and AOM that the oxidizing power is strong cannot be extracted.

  Even if a buffer tank is not used, the ozone concentration decreases while the cleaning liquid passes through the piping if the cleaning liquid is prepared and then discharged onto the silicon wafer W as in Patent Documents 1 and 2. Therefore, the same inconvenience as described above is caused.

On the other hand, in the present embodiment, the second chemical liquid L ₂ and the first chemical liquid L _{1 made of} ozone water are not mixed in the apparatus, but they are individually discharged onto the silicon wafer W, and the surface of the silicon wafer W is obtained. Mix them above. Accordingly, a cleaning liquid such as HOM or AOM is generated on the surface of the silicon wafer W, and the silicon wafer W is exposed to the cleaning liquid in a high ozone concentration. It is easy to form a thin silicon dioxide layer, and the silicon dioxide layer makes it easy to control etching during cleaning.

In addition, the ozone water employed as the first chemical liquid L ₁ removes harmful substances from the cleaning liquid because the ozone concentration in the ozone water automatically degrades as time elapses after the cleaning is completed. Therefore, the burden on the waste liquid treatment apparatus (not shown) is reduced. As a result, ozone water is reliably decomposed in this waste liquid treatment apparatus, so that harmful liquids containing ozone water can be prevented from flowing into the environment where humans live, and more environmentally friendly cleaning can be performed. .

  The inventor of the present application conducted the following experiment in order to confirm the cleaning effect of the above-described embodiment.

  In this experiment, three silicon wafers were prepared, each of which was placed on an electrostatic chuck (not shown) made of stainless steel, and these silicon wafers were intentionally contaminated with a metal constituting stainless steel. Of these three silicon wafers, one was a reference silicon wafer that was not cleaned. Then, one of the remaining two sheets was washed with general HPM as a comparative example, and the other sheet was washed with HOM according to the present embodiment.

The cleaning conditions with HPM in the comparative example are as follows.
-HPM volume ratio: HCl: H ₂ O ₂ : DIW (pure water) = 1: 5: 50
・ Concentration of HCl: 35 wt%
・ Concentration of H ₂ O ₂ : 30 wt%
・ Temperature of cleaning liquid: 50 ℃
・ Flow rate of cleaning liquid: 1 Litter / min
・ Cleaning time: 30 seconds ・ Rotation speed: 500 rpm
On the other hand, the cleaning conditions in HOM according to the present embodiment are as follows.
-Volume ratio of HCl (second chemical L ₂ ): DIW (pure water L _w ) in HOM: 1:50
・ Flow rate of ozone water (1st chemical L ₁ ) in HOM ... 1Litter / min
・ Ozone concentration in ozone water (1st chemical L ₁ ) ... 40ppm (= 40mg / Litter)
・ Concentration of HCl: 35 wt%
・ Temperature of cleaning liquid: 50 ℃
・ Flow rate of cleaning liquid: 1.5Litter / min
・ Cleaning time: 30 seconds ・ Rotation speed: 500 rpm
Then, when the metal (Ti, Fe, Zn) remaining on the cleaned silicon wafer was measured with a total reflection fluorescent X-ray apparatus, a result as shown in FIG. 7 was obtained.

  As shown in FIG. 7, it is understood that both the present embodiment and the comparative example have a cleaning effect because the amount of contaminants is reduced as compared with that before cleaning (reference silicon wafer). .

  Moreover, when this embodiment and a comparative example are compared, a remarkable difference is not seen in both. As a result, it has been clarified that even when a method of mixing chemical liquids on the silicon wafer W as in the present embodiment is employed, the cleaning effect in the case of using a general HPM can be maintained.

  Furthermore, the inventor of the present application conducted the following experiment in order to confirm the effect of the present embodiment.

  In this experiment, three silicon wafers were prepared in the same manner as described above, but they were not intentionally contaminated. Instead, chlorine contained in the silicon wafer was regarded as a contaminant and how much the chlorine was washed. It was investigated whether it decreased. Of the three silicon wafers, one is a reference silicon wafer, and the cleaning method of the comparative example and this embodiment was applied to the remaining two wafers. These cleaning conditions are the same as those described with reference to FIG.

  By the experiment, the result shown in FIG. 8 was obtained.

  As shown in FIG. 8, the amount of chlorine is reduced in both the present embodiment and the comparative example as compared to before cleaning (reference silicon wafer).

  Further, comparing this embodiment with the comparative example, it is clear that the present embodiment has at least the same cleaning effect as the comparative example because the amount of chlorine is smaller in this embodiment. became.

(2) Second Embodiment Next, a method for manufacturing an electronic device according to a second embodiment of the present invention will be described. In the present embodiment, the cleaning method of the first embodiment is applied to the cleaning process in the MOS transistor production line.

  9 to 11 are sectional views showing the cleaning method of the electronic device according to this embodiment in the order of steps.

  First, as shown in FIG. 9A, the surface of the silicon substrate 50 is cleaned in accordance with the timing described in FIG. 5 to remove metal elements and the like attached to the surface, so that a clean surface of the silicon substrate 50 is obtained. Expose. As described with reference to FIG. 5, an ozone water treatment is first performed to form an extremely thin silicon dioxide layer on the surface of the silicon substrate 50, and this silicon dioxide layer prevents the silicon substrate 50 from being excessively etched. This makes it easier to control the etching rate during cleaning.

  Next, as shown in FIG. 9B, the surface of the silicon substrate 50 is thermally oxidized to form an initial silicon dioxide layer 51 having a thickness of about 10 to 20 nm.

  After that, the initial silicon dioxide layer 51 is cleaned according to the timing of any of FIG. 5, FIG. 6 (a), and FIG. 6 (b). Since the initial silicon dioxide layer 51 has a lower etching rate with respect to HOM and AOM than silicon, the ozone water treatment of FIG. 5 for controlling the etching rate may be omitted. FIG. 6 (a) and FIG. You may wash | clean at the timing of (b).

  Subsequently, as shown in FIG. 9C, a silicon nitride layer 52 is formed to a thickness of about 100 to 200 nm by low pressure chemical vapor deposition (Low Pressure CVD). The silicon nitride layer 52 functions as a mask for etching the silicon substrate 50 as will be described later, but it is not formed directly on the silicon substrate 50 but formed on the initial silicon dioxide layer 51. By doing so, the stress acting on the silicon substrate 50 from the silicon nitride layer 52 is relieved, and it is possible to prevent the silicon substrate 50 from cracking.

  Thereafter, the silicon nitride layer 52 is cleaned by adopting the same cleaning method as that for the initial silicon dioxide layer 51.

  Next, steps required until a sectional structure shown in FIG.

  First, a resist pattern (not shown) is formed on the mask layer 52, and the silicon nitride layer 52 is etched using the resist pattern as a mask, thereby forming a first opening 52a in the silicon nitride layer 52. Thereafter, the resist pattern is removed.

Next, the initial silicon dioxide layer 51 and the silicon substrate 50 are etched by RIE (Reactive Ion Etching) using HBr + O ₂ as an etching gas while the silicon nitride layer 52 is used as a mask, so that the initial stage under the first opening 52a is etched. A second opening 51a is formed in the silicon dioxide layer 51, and an element isolation trench 50a for STI (Shallow Trench Isolation) having a depth of about 300 nm is formed in the silicon substrate 50 therebelow.

  Thereafter, the inner surface of the element isolation trench 50a is cleaned according to the timing described with reference to FIG.

  Next, steps required until a sectional structure shown in FIG.

First, in order to recover the damage received on the inner surface of the element isolation groove 50a during the above etching, the inner surface of the element isolation groove 50a is thermally oxidized to form a thermal oxide film 53 having a thickness of about 5 to 20 nm. Thereafter, a silicon dioxide layer is formed on the entire surface by HDPCVD (High Density Plasma CVD) method using silane (SiH ₄ ), oxygen, and helium as reaction gases, and the inner surface of the element isolation trench 50a is completely embedded by this silicon dioxide layer. .

  Subsequently, while using the silicon nitride layer 52 as a polishing stopper, an excess silicon dioxide layer on the silicon nitride layer 52 is polished and removed by CMP (Chemical Mechanical Polishing) method, and this silicon dioxide is only in the element isolation trench 50a. The layer is left as an element isolation insulating film 54.

  Then, after the silicon nitride layer 52 is removed by etching with phosphoric acid, the initial silicon dioxide layer 51 is further removed by etching with hydrofluoric acid.

  Thereafter, the upper surface of the element isolation insulating film 54 and the surface of the silicon substrate 50 are cleaned in accordance with the timing described with reference to FIG. 5 to obtain the cross-sectional structure of FIG.

  Next, steps required until a sectional structure shown in FIG.

First, boron is ion-implanted as a p-type impurity into the n-type MOS transistor formation region of the silicon substrate 50 under conditions of an acceleration energy of about 100 KeV or more and a dose amount of 1 × 10 ¹³ cm ⁻³ or more to form a p-well 55a. Further, phosphorus is ion-implanted as an n-type impurity into the silicon substrate 50 in the p-type MOS transistor formation region under conditions of an acceleration energy of 300 KeV or more and a dose amount of 1 × 10 ¹³ cm ⁻³ or more to form an n-well 55b.

  In this case, the p-type and n-type impurities are divided using a resist pattern (not shown) on the silicon substrate 50, and this resist pattern is removed by wet treatment after ion implantation. In the wet treatment, for example, sulfuric acid / hydrogen peroxide is used. In addition to the resist pattern, the upper surface of the element isolation insulating film 54 is also shaved, and the upper surface becomes substantially the same height as the surface of the silicon substrate 50.

  Thereafter, the upper surface of the element isolation insulating film 54 and the surface of the silicon substrate 50 are cleaned in accordance with the timing described with reference to FIG.

  Next, as shown in FIG. 10C, heat having a thickness of about 1 to 2 nm is formed on the surface of the silicon substrate 50 by RTP (Rapid Thermal Processing) in which the substrate temperature is about 800 ° C. in a reduced oxygen atmosphere. An oxide film is grown and used as a gate insulating film 56.

  Further, a polysilicon layer 57 is formed to a thickness of about 50 to 150 nm on the gate insulating film 56 by a low pressure CVD method using silane as a reaction gas.

  Thereafter, the surface of the polysilicon layer 57 is cleaned at the timing described with reference to FIG.

  Subsequently, as shown in FIG. 11A, the polysilicon layer 57 is patterned to form a gate electrode 57a on the n-type MOS transistor formation region. Next, the gate insulating film 56 is etched using the gate electrode 57a as a mask, leaving the gate insulating film 56 only under the gate electrode 57a.

  Subsequently, the surfaces of the silicon substrate 50 and the gate electrode 57a are cleaned at the timing described with reference to FIG.

  Thereafter, activation annealing for activating the respective impurities in the p well 55a and the n well 55b is performed.

  Next, steps required until a sectional structure shown in FIG.

First, using the gate electrode 57a as a mask, for example, arsenic as an n-type impurity is ion-implanted into the silicon substrate 50 under the conditions of an acceleration energy of 1 to 5 KeV and a dose of about 2 × 10 ¹⁵ cm ^−3. / Drain extensions 59a and 59b are formed extremely shallow.

  Further, for example, boron is used as an n-type impurity, and this impurity is ion-implanted into the silicon substrate 50 using the gate electrode 57a as a mask, whereby pocket regions 58a and 58b for suppressing punch-through between the source and the drain. Are formed on both sides of the gate electrode 57a.

  Subsequently, the surfaces of the silicon substrate 50 and the gate electrode 57a are cleaned at the timing described with reference to FIG.

  Thereafter, activation annealing for activating the respective impurities in the source / drain extensions 59a and 59b and the pocket regions 58a and 58b is performed.

  Next, steps required until a sectional structure shown in FIG.

  First, the surfaces of the silicon substrate 50 and the gate electrode 57a are cleaned at the timing described with reference to FIG.

  Next, after a silicon dioxide layer is formed on the entire surface by the CVD method, the silicon dioxide layer is etched back by anisotropic dry etching to leave the insulating sidewalls 61 on both sides of the gate electrode 57a.

Further, using the gate electrode 57a and the insulating sidewall 61 as a mask, for example, arsenic as an n-type impurity is ion-implanted into the silicon substrate 50 under conditions of an acceleration energy of 5 to 10 KeV and a dose of 1 × 10 ¹⁶ cm ⁻³ or less. Thereby, source / drain regions 60a and 60b deeper than the source / drain extensions 59a and 59b and the pocket regions 58a and 58b are formed on both sides of the gate electrode 57a.

  Subsequently, after cleaning the surfaces of the silicon substrate 50 and the gate electrode 57a at the timing described with reference to FIG. 5, activation annealing is performed to activate the impurities in the source / drain regions 60a and 60b.

  Next, the entire surface is washed again at the timing described in FIG. Next, a refractory metal film such as nickel or cobalt is formed on the entire surface by sputtering, the silicon substrate 50 is heated to react the refractory metal with silicon, and the silicide layer 62a is formed on the surface layer of the source / drain regions 60a and 60b. , 62b. The silicide layer is also formed on the surface layer of the gate electrode 57a, and the gate electrode 57a has a polycide structure.

  Thus, the basic structure of the n-type MOS transistor TR is completed.

  Thereafter, an interlayer insulating film is formed on the entire surface, holes having a depth reaching the silicide layers 62a and 62b are formed in the interlayer insulating film, and conductive plugs electrically connected to the silicide layers 62a and 62b are formed. The process of forming in this hole is performed, but the details are omitted.

  According to this embodiment described above, since the cleaning method of the first embodiment is applied to the MOS transistor manufacturing process, each film can be effectively cleaned while controlling the etching rate with a cleaning solution having a high ozone concentration. it can.

(3) Third Embodiment Next, an electronic device cleaning method according to a third embodiment of the present invention will be described. In the present embodiment, a case where the cleaning method of the first embodiment is applied to a plasma display panel will be described.

  FIG. 12 is an exploded perspective view of a plasma display panel (PDP) to which the cleaning method described in the first embodiment is applied.

  The plasma display panel has a rear glass substrate 80 and a front glass substrate 84 which face each other, and the rear glass substrate 80 includes R (red), G (green), and B (blue) light emitting areas. A partition wall 81 made of glass is provided. Further, on the rear glass substrate 80 between the partition walls 81, address electrodes 82R, 82G, and 82B formed by laminating a lower chrome layer, a copper layer, and an upper chrome layer in this order are respectively R, G, and B. Further, phosphor layers 83R, 83G, and 83B that emit the respective colors R, G, and B are formed on the address electrodes 82R, 82G, and 82B, which are formed according to the light emitting region.

  On the other hand, on the front glass substrate 84, a three-layer structure of a display electrode 87 made of a transparent conductive film such as ITO (indium oxide) or Nesa (tin oxide), a lower chromium layer, a copper layer, and an upper chromium layer. Thus, a bus electrode 88 for supplementing the conductivity of the display electrode 87 is formed in this order.

  The display electrode 87 is covered with a dielectric layer 85 made of a glass material or the like, and a protective layer 86 such as MgO (magnesium oxide) is formed on the dielectric layer 85.

  In such a plasma display, a gas such as xenon is sealed in the discharge space 89, and ultraviolet rays are generated by discharging between the pair of display electrodes 87, and the phosphor layers 83R, 83G, and 83B are formed by the ultraviolet rays. The light is emitted to display a predetermined color toward the user on the front glass substrate 84 side.

  Next, the case where the cleaning method described in the first embodiment is applied to the manufacturing process of the plasma display panel will be described.

  The back glass substrate 80 and the front glass substrate 84 need to be cleaned in order to remove dust adhering to the surface before the above-described elements are formed. This cleaning (initial cleaning) is the first. It is preferable to carry out according to the cleaning method of the embodiment. In this case, since glass having a slower etching rate with respect to HOM and AOM than silicon is the object to be cleaned, it is not always necessary to perform the first ozone water treatment at the timing of FIG. 5, and FIG. 6A or FIG. Cleaning may be performed at the timing of).

  In addition, since the address electrodes 82R to 82B, the display electrode 87, and the bus electrode 88 are all formed by patterning a metal layer, after etching in this patterning, the metal is formed according to the cleaning method described in the first embodiment. These electrodes consisting of layers may be cleaned.

  According to the present embodiment described above, since the cleaning method described in the first embodiment is applied to the cleaning process of the glass substrate and electrodes constituting the plasma display, the etching rate is controlled with a cleaning solution having a high ozone concentration. However, these glass substrates and electrodes can be effectively cleaned.

(4) Fourth Embodiment Next, an electronic device cleaning method according to a fourth embodiment of the present invention will be described. In the present embodiment, a case where the cleaning method of the first embodiment is applied to a liquid crystal panel will be described.

  FIG. 13 is a cross-sectional view of a liquid crystal panel (LCD) to which the cleaning method described in the first embodiment is applied.

  This liquid crystal panel is a direct-view type, a TFT (Thin Film Transistor) substrate 90 and a CF substrate 100 disposed with a spacer (not shown) interposed therebetween, a sealing material 109 for bonding these substrates, each substrate 90, The deflecting plates 98 and 107 are disposed on the lower side of the TFT substrate 40 and the upper side of the CF substrate, respectively.

  The TFT substrate 90 includes a glass substrate 91, a TFT 92 formed thereon, a wiring 93 such as a data line and a scanning line, an interlayer insulating layer 94, a pixel electrode 95, an extraction terminal 96, and an alignment film 97.

  On the other hand, the CF substrate 100 includes a glass substrate 101, a black matrix 102, a color filter 103, an interlayer insulating layer 104, a counter electrode 105, and an alignment film 106 formed on the lower surface thereof.

  Next, a case where the cleaning method described in the first embodiment is applied to the manufacturing process of the liquid crystal panel will be described.

  In the above liquid crystal panel, dust and the like adhering to the surface of the liquid crystal panel are removed in a cleaning process before forming various films on the glass substrates 91 and 101. The cleaning method described in the first embodiment is preferably applied to this cleaning step, and the cleaning may be performed at any timing of FIG. 5, FIG. 6 (a), and FIG. 6 (b).

  In addition, the cleaning method of the first embodiment may be applied to cleaning of the wiring 93, the interlayer insulating layers 104 and 94, the pixel electrode 95, the extraction terminal 96, the alignment film 97, and the like.

  The features of the present invention will be described below.

(Supplementary note 1) a substrate mounting table on which a substrate is mounted;
A first discharge port for discharging a first chemical solution formed by dissolving only the first solvent toward the substrate;
A second discharge port for discharging a second chemical solution, which is formed by dissolving only a second solvent different from the first solvent, toward the substrate;
A cleaning device for an electronic device, comprising:

  (Supplementary note 2) The electronic device cleaning apparatus according to supplementary note 1, wherein the first chemical solution is ozone water, and the second chemical solution is an acidic solution or an alkaline solution.

  (Supplementary note 3) The electronic device cleaning apparatus according to supplementary note 2, further comprising a control unit that controls a discharge timing of the first chemical solution and the second chemical solution.

  (Supplementary note 4) The electronic device cleaning apparatus according to supplementary note 2, wherein the substrate mounting table is rotatable.

  (Additional remark 5) The washing | cleaning apparatus in the electronic device of Additional remark 2 characterized by having the 3rd discharge outlet which discharges a pure water toward the said board | substrate.

  (Additional remark 6) At least one of the 1st temperature adjustment part which adjusts the temperature of the said 1st chemical | medical solution, and the 2nd temperature adjustment part which adjusts the temperature of the said 2nd chemical | medical solution is provided, The additional remark 1 characterized by the above-mentioned. Electronic device cleaning equipment.

  (Supplementary Note 7) A first chemical solution in which only the first solvent is dissolved and a second chemical solution in which only the second solvent different from the first solvent is dissolved are respectively supplied to the substrate from separate discharge ports. A method for cleaning an electronic device comprising: mixing the first chemical solution and the second chemical solution on the substrate by discharging the substrate to the substrate, and cleaning the substrate.

  (Additional remark 8) The cleaning method of the electronic device of Additional remark 7 characterized by using ozone water as said 1st chemical | medical solution, and using an acidic solution or an alkaline solution as said 2nd chemical | medical solution.

  (Additional remark 9) The washing | cleaning method of the electronic device of Additional remark 8 characterized by using the stock solution of either hydrochloric acid, a sulfuric acid, and nitric acid, or the solution which diluted this stock solution with the pure water as said acidic solution.

  (Supplementary note 10) The supplementary note 8, wherein the alkaline solution is a stock solution of ammonia water, tetramethylammonium hydroxide aqueous solution and trimethylammonium hydroxide aqueous solution, or a solution obtained by diluting the stock solution with pure water. Electronic device cleaning method.

  (Supplementary note 11) The electronic device cleaning method according to supplementary note 8, wherein the first chemical liquid is discharged first, and then the second chemical liquid is discharged.

  (Additional remark 12) The said 1st chemical | medical solution and the said 2nd chemical | medical solution are discharged simultaneously, The washing | cleaning method of the electronic device of Additional remark 8 characterized by the above-mentioned.

  (Supplementary note 13) The electronic device cleaning method according to supplementary note 8, wherein the first chemical solution and the second chemical solution are alternately discharged.

  (Supplementary note 14) The electronic device cleaning method according to supplementary note 7, wherein pure water is discharged onto the substrate while the substrate is being cleaned.

  (Supplementary note 15) The electronic device cleaning method according to supplementary note 7, wherein the substrate is rotated while the substrate is being cleaned.

FIG. 1 is a configuration diagram of a buffer tank provided in a cleaning device according to a conventional example. FIG. 2 is a configuration diagram of a cleaning device for an electronic device according to the first embodiment of the present invention. FIG. 3 is a top view of the electronic apparatus cleaning apparatus according to the first embodiment of the present invention. FIG. 4 is a cross-sectional view schematically showing the cleaning method for the electronic device according to the first embodiment of the present invention. FIG. 5 is a timing chart showing the timing at which the liquid is discharged in the electronic device cleaning method according to the first embodiment of the present invention. FIGS. 6A and 6B are timing charts showing another example of the timing at which liquid is discharged in the cleaning method for an electronic device according to the first embodiment of the present invention. FIG. 7 is a graph showing the results of an experiment conducted to confirm the effect of the electronic device cleaning method according to the first embodiment of the present invention. FIG. 8 is a graph showing the results of another experiment conducted to confirm the effect of the electronic device cleaning method according to the first embodiment of the present invention. 9A to 9D are cross-sectional views (part 1) illustrating the cleaning method of the electronic device according to the second embodiment of the present invention in the order of steps. 10A to 10C are cross-sectional views (part 2) illustrating the cleaning method of the electronic device according to the second embodiment of the present invention in the order of steps. 11A to 11C are cross-sectional views (part 3) illustrating the cleaning method of the electronic device according to the second embodiment of the present invention in the order of steps. FIG. 12 is an exploded perspective view of a plasma display panel to be cleaned by the electronic device cleaning method according to the third embodiment of the present invention. FIG. 13 is a cross-sectional view of a liquid crystal panel to be cleaned by the cleaning method for an electronic device according to the fourth embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Buffer tank, 2 ... 4th piping, 3 ... 1st piping, 4 ... 2nd piping, 5 ... 3rd piping, 6 ... Pump, 7 ... Cleaning liquid, 8 ... Cleaning apparatus main body, 10 ... Spin base, 12 ... 2nd shaft, 13 ... guide pin, 14 ... regulating pin, 15 ... belt, 16 ... first motor, 17 ... first piping, 17a ... first discharge port, 17b ... first shaft, 18 ... second piping, 18a 2nd discharge port, 18b ... 2nd shaft, 19 ... 2nd internal piping, 19a ... 3rd discharge port, 20 ... 1st internal piping, 21 ... Shut-off plate, 22 ... 5th piping, 23 ... 2nd motor, DESCRIPTION OF SYMBOLS 24 ... Ozone water manufacturing apparatus, 25 ... Chemical supply cabinet, 25a ... Tank, 26 ... 3rd piping, 27 ... 4th piping, 28 ... Switching valve, 29 ... Control part, 30 ... 1st gas flow path, 31 ... 1st 2 gas flow paths, 32 ... second gas supply unit, 33 ... first gas supply unit, 34 ... flow rate Node part 35 ... Temperature control part 50 ... Silicon substrate 50 ... Element isolation groove 51 51 Initial silicon dioxide layer 51a Second opening 52 52 Silicon nitride layer 52a First opening 53 Thermal oxide film 54 ... element isolation insulating film, 55a ... p well, 55b ... n well, 56 ... gate insulating film, 57 ... polysilicon layer, 57a ... gate electrode, 58a, 58b ... pocket region, 59a, 59b ... source / drain extension 60a, 60b ... source / drain regions, 61 ... insulating sidewalls, 62a, 62b ... silicide layers, 80 ... back glass substrate, 81 ... partition walls, 82R, 82G, 82B ... address electrodes, 83R, 83G, 83B ... fluorescent light Body layer, 84 ... front glass substrate, 85 ... dielectric layer, 86 ... protective layer, 87 ... display electrode, 88 ... bus electrode, 89 ... discharge space, 90 TFT substrate, 91, 101 ... glass substrate, 92 ... TFT, 93 ... wiring, 94, 104 ... interlayer insulating layer, 95 ... pixel electrode, 96 ... extraction terminal, 97, 106 ... alignment film, 98, 107 ... deflection plate, 99 ... Liquid crystal, 100 ... CF substrate, 102 ... Black matrix, 103 ... Color filter, 105 ... Counter electrode.

Claims (5)

A substrate mounting table on which the substrate is mounted;
A first discharge port for discharging a first chemical solution formed by dissolving only the first solvent toward the substrate;
A second discharge port for discharging a second chemical solution, which is formed by dissolving only a second solvent different from the first solvent, toward the substrate;
A cleaning device for an electronic device, comprising:   The electronic device cleaning apparatus according to claim 1, wherein the first chemical liquid is ozone water, and the second chemical liquid is an acidic solution or an alkaline solution.   Discharging a first chemical solution in which only the first solvent is dissolved and a second chemical solution in which only the second solvent, which is different from the first solvent, is dissolved, onto the substrate from different discharge ports, respectively. The method of cleaning an electronic device, comprising: mixing the first chemical liquid and the second chemical liquid on the substrate and cleaning the substrate.   4. The method of cleaning an electronic device according to claim 3, wherein ozone water is used as the first chemical solution, and an acidic solution or an alkaline solution is used as the second chemical solution.   5. The method of cleaning an electronic device according to claim 4, wherein the first chemical liquid is discharged first, and then the second chemical liquid is discharged.

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