JP2005347686A - 高臨界電流特性を有する超伝導材料及びその製造方法 - Google Patents
高臨界電流特性を有する超伝導材料及びその製造方法 Download PDFInfo
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- JP2005347686A JP2005347686A JP2004168444A JP2004168444A JP2005347686A JP 2005347686 A JP2005347686 A JP 2005347686A JP 2004168444 A JP2004168444 A JP 2004168444A JP 2004168444 A JP2004168444 A JP 2004168444A JP 2005347686 A JP2005347686 A JP 2005347686A
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- 239000000463 material Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000002887 superconductor Substances 0.000 claims description 30
- 230000003287 optical effect Effects 0.000 claims description 18
- 230000004907 flux Effects 0.000 claims description 13
- 239000002096 quantum dot Substances 0.000 claims description 12
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 229910004247 CaCu Inorganic materials 0.000 claims description 4
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 3
- 150000002602 lanthanoids Chemical class 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000007796 conventional method Methods 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 abstract description 3
- 239000010409 thin film Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 241000238366 Cephalopoda Species 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000008204 material by function Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000004651 near-field scanning optical microscopy Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
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- 238000000053 physical method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
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- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
【構成】可視光の照射により形成された母相よりも低い臨界温度を有する超伝導体からなるナノドットが高温超伝導材料内に分布することを特徴とする、ナノドットを利用したピン止め中心を有する超伝導材料。好ましくは、ナノドットは、直径が100 nm以下、平均間隔100nm以下で材料内に分布している。
【選択図】 図5
Description
以下の通り可視光の照射実験を行った。組成式Bi2Sr2CaCu2O8+d (以下Bi2212)で示される多結晶セラミックスをターゲットとし、レーザーアブレーション法によりSrTiO3単結晶上にc軸配向したBi2212薄膜を作製した。得られた薄膜を酸素処理し、超伝導臨界温度Tcが最適(Tc=87K)となるホール濃度よりも過剰のホール量を有するTc=80Kの試料を準備した。
Claims (6)
- 可視光の照射により形成された母相よりも低い臨界温度を有する超伝導体からなるナノドットが高温超伝導材料内に分布することを特徴とする、ナノドットを利用したピン止め中心を有する超伝導材料。
- 前記のナノドットは、直径が100 nm以下、平均間隔100nm以下で材料内に分布していることを特徴とする、請求項1に記載のナノドットを利用したピン止め中心を有する超伝導材料。
- 前記超伝導材料は、組成式(Bi2-xPbx)Sr2CuO7+d、(Bi2-xPbx)Sr2(Ca1-yYy)Cu2O8+d、(Bi,Pb)2Sr2Ca2Cu3O10+d(但し、0≦x≦1、0≦y≦1、0≦d≦1)で表される、請求項1又は2に記載のナノドットを利用したピン止め中心を有する超伝導材料。
- 前記超伝導材料は、組成式(Bi2-xPbx)(Sr2-xMx)CuO7+d、(Bi2-xPbx)Sr2(Ca1-yMy)Cu2O8+d(但し、M=ランタンノイド元素の一元素又は複数元素、0≦x≦1、0≦y≦1、0≦d≦1)、Tl2Ba2CuO6+d, Tl2Ba2CaCu2O8+d、又はTl2Ba2Ca2Cu3O10+d(但し、0≦d≦1)で表される、請求項1又は2に記載のナノドットを利用したピン止め中心を有する超伝導材料。
- 上記超伝導材料に対しレーザー波長647 nm以下の可視光を照射することにより、超伝導材料内に磁束ピン止めとして働く超伝導体からなるナノドットを形成することを特徴とする、請求項1ないし4のいずれかに記載のナノドットを利用したピン止め中心を有する超伝導材料の製造方法。
- 上記超伝導材料に対し近接場光学顕微鏡で可視光を照射することにより、超伝導材料内に磁束ピン止めとして働く超伝導体からなるナノドットを形成することを特徴とする、請求項1ないし4のいずれかに記載のナノドットを利用したピン止め中心を有する超伝導材料の製造方法。
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JP2005347686A true JP2005347686A (ja) | 2005-12-15 |
JP4859165B2 JP4859165B2 (ja) | 2012-01-25 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109738709A (zh) * | 2018-11-26 | 2019-05-10 | 上海电气电站设备有限公司 | 一种大型汽轮发电机端部电磁场、温度场计算方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6433006A (en) * | 1987-04-08 | 1989-02-02 | Hitachi Ltd | Production of superconducting oxide and superconducting device |
JPH08250773A (ja) * | 1995-03-10 | 1996-09-27 | Nippon Telegr & Teleph Corp <Ntt> | 超伝導薄膜の臨界温度制御方法 |
JP2003261400A (ja) * | 2002-03-07 | 2003-09-16 | Rikogaku Shinkokai | 無機化合物固体結晶物質の光誘起相制御方法 |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6433006A (en) * | 1987-04-08 | 1989-02-02 | Hitachi Ltd | Production of superconducting oxide and superconducting device |
JPH08250773A (ja) * | 1995-03-10 | 1996-09-27 | Nippon Telegr & Teleph Corp <Ntt> | 超伝導薄膜の臨界温度制御方法 |
JP2003261400A (ja) * | 2002-03-07 | 2003-09-16 | Rikogaku Shinkokai | 無機化合物固体結晶物質の光誘起相制御方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109738709A (zh) * | 2018-11-26 | 2019-05-10 | 上海电气电站设备有限公司 | 一种大型汽轮发电机端部电磁场、温度场计算方法 |
CN109738709B (zh) * | 2018-11-26 | 2021-01-05 | 上海电气电站设备有限公司 | 一种大型汽轮发电机端部电磁场、温度场计算方法 |
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