JP2005347393A - Functional material sensitive to electromagnetic field - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a functional material sensitive to electromagnetic field in which electromagnetic properties and frequency characteristics are altered easily. <P>SOLUTION: In the functional material sensitive to electromagnetic field where unit cells (1) each having such an electric field sensitive circuit (16) as a diode (14) is connected with a conductor (12) to sense electric field variation, and such a magnetic field sensitive circuit (18) as a diode (20) is connected with a conductor (22) and a capacitor (24) to sense magnetic field variation are aggregated, operation of each diode in the electric field sensitive circuit or the magnetic field sensitive circuit is controlled by the bias voltage thus controlling electromagnetic properties of the functional material sensitive to electromagnetic field. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an electromagnetic field sensitive functional material capable of controlling various electromagnetic properties against incident electromagnetic waves.

  In recent years, the number of high-rise buildings has increased, and the reception of radio waves and communication have been hindered by the reflection of radio waves by the buildings. For this reason, the necessity of the electromagnetic wave absorber which does not reflect an electromagnetic wave has increased. For such a radio wave absorber, ferrite, carbon graphite, ferroelectric, or the like is used. In addition, anisotropy ferrite or the like is also used as a material constituting a high-frequency circuit element such as a filter or a circulator.

  However, taking a ferrite wave absorber as an example, electromagnetic properties such as dielectric constant and permeability are determined at the time of manufacture, and it has been impossible to change these properties at a later date. In addition, since various properties of the conventional materials depend on the frequency, the frequency of use as a radio wave absorber is limited and the degree of freedom in design is low.

For this reason, the present inventor has proposed in Patent Document 1 described later that an adjustment hole, which is a through hole, is provided in a rubber ferrite radio wave absorber to adjust the matching frequency.
Japanese Patent No. 3182392

  According to the radio wave absorber disclosed in Patent Document 1, it is possible to considerably change the matching frequency or widen the frequency band by changing the size and shape of the adjustment hole. There is a problem that it is difficult to change the frequency characteristics of the completed radio wave absorber as needed, because it does not change the electromagnetic properties such as the dielectric constant and permeability.

  The present invention has been made in view of the above-described problems, and includes an electromagnetic field-sensitive functional material that can easily change the electromagnetic characteristics of a radio wave absorber, a microwave or a millimeter wave device, and its frequency characteristics at any time. The issue is to provide.

  In order to solve the above problems, the invention according to claim 1 is an electromagnetic field sensitive functional material in which unit cells each having an electric field sensitive circuit sensitive to an electric field change and a magnetic field sensitive circuit sensitive to a magnetic field change are assembled. And controlling the operation of the circuit element incorporated in the electric field sensitive circuit or the circuit element incorporated in the magnetic field sensitive circuit to generate or erase an electromagnetic field having a phase opposite to the incident electromagnetic field. It is characterized by controlling electromagnetic properties with respect to incident electromagnetic waves by means of damaging or attenuating.

  According to a second aspect of the present invention, in the first aspect of the present invention, the circuit element in the electric field sensitive circuit and the circuit element in the magnetic field sensitive circuit are both diodes, and their operation is controlled by controlling a bias voltage. Is controlled.

  Claim 3 is an electromagnetic field sensitive functional material in which unit cells in which photosensitive elements are connected by conductors or resistors are assembled, and the operation of the photosensitive elements is controlled by a light emitter, thereby preventing incident electromagnetic waves. It is characterized in that various electromagnetic properties can be controlled.

  According to the first aspect of the present invention, when the operation of the circuit element of the electric field sensitive circuit or the magnetic field sensitive circuit is controlled, the loss due to the resistance of the circuit element is changed and induced in each circuit by the electromagnetic field incident from the outside. The current or voltage can be changed, thereby easily changing various electromagnetic properties such as magnetic permeability and dielectric constant. In particular, in the vicinity of the resonance frequency of each circuit, by changing each circuit element to conduction, appropriate resistance, high resistance, and non-conduction, the impedance of each circuit changes greatly, and the resonance state changes greatly. Electromagnetic properties such as magnetic susceptibility and dielectric constant can be changed greatly. Thereby, the electromagnetic field sensitive functional material which can change a frequency characteristic easily at any time is obtained.

  In the invention according to claim 2, since the circuit element in the electric field sensitive circuit and the circuit element in the magnetic field sensitive circuit are both diodes and their operations are controlled by controlling the bias voltage, it is very simple. An electromagnetic field sensitive functional material having the structure can be obtained.

  In the invention according to claim 3, since the light sensitive element in the electromagnetic field sensitive material in which the unit cells in which the light sensitive elements are connected by conductors or resistors are assembled is controlled by the light emitter, similarly to the invention according to claim 1. Electromagnetic properties such as magnetic permeability and dielectric constant, and its frequency characteristics can be easily changed at any time. In addition, since there is no need to connect a control conductor to the photosensitive element, an electromagnetic field sensitive functional material having an extremely simple configuration can be obtained.

  1-4 illustrate the basic concept of the present invention. FIG. 1 shows a unit cell 1 in which a passive or active three-terminal circuit element 3 is arranged at each vertex of a cube. Such a circuit element may be any element that can control the conduction state by a control signal, such as a transistor. FIG. 2 shows an example of a unit cell 1 having a cubic structure composed of circuit elements 4 having two terminals, passive or active. The two-terminal circuit element 4 may be a diode, a light-sensitive element, a heat-sensitive element, a magnetic-sensitive element, a pressure-sensitive element, or the like as long as the conduction state can be easily changed by some control signal. FIG. 3 shows an example of a unit cell 1 in which a three-terminal circuit element 3 and a two-terminal circuit element 4 are combined.

  When transistors or diodes are used for the circuit elements 3 and 4, the operation of the circuit elements 3 and 4 is controlled by changing the bias voltage. Since the circuit elements 3 and 4 change the conduction state by changing the bias voltage, the conduction state can be variously changed to a non-resistance state, a high resistance state, a non-conduction state, a constant current state, a constant voltage state, or the like. Can do.

  Since the unit cell 1 has a cubic shape, each side becomes an electric field sensitive circuit that is sensitive to an electric field change of an incident electromagnetic wave parallel to the side, and four sides that circulate around each surface are sensitive to an incident magnetic field change that penetrates each surface. It becomes a magnetic field sensitive circuit. By changing the conduction state of the circuit elements 3 and 4 installed on each side or each vertex, the impedance of the electric field sensitive circuit or the magnetic field sensitive circuit is changed, and the resonance state is controlled, or the loss due to the resistance of the circuit elements 3 and 4 Can be controlled.

  Such unit cells 1 are assembled in an appropriate arrangement in the vertical and horizontal directions and, for example, as shown in FIG. 4, they are regularly assembled like a crystal lattice to constitute an electromagnetic field sensitive functional material. Of course, the electromagnetic field sensitive functional material may be configured by gathering in a disordered arrangement like glass molecules, but in this case, the bias voltage applying wiring becomes complicated.

  Here, by controlling the operation of the circuit elements 3 and 4, the loss due to the resistance of the circuit elements is changed, and the current or voltage induced in the electric field sensitive circuit or the magnetic field sensitive circuit is changed by the electromagnetic field incident from the outside. Thus, various electromagnetic properties such as magnetic permeability and dielectric constant of the electromagnetic field sensitive functional material of the present invention can be easily changed at any time. In particular, in the vicinity of the resonance frequency of each circuit, if each circuit element is changed to conductive, appropriate resistance, high resistance, or non-conductive, the impedance of each circuit also changes greatly, and the resonance state changes greatly. Electromagnetic properties such as dielectric constant and dielectric constant also change greatly. Thereby, an electromagnetic field sensitive functional material whose frequency characteristics can be easily changed can be obtained.

  In general, electromagnetic properties such as electromagnetic wave reflectivity, absorptance, transmittance, and attenuation factor are mainly determined by the dielectric constant, permeability, and conductivity of the medium. For example, by changing the dielectric constant or permeability along with the resistance of each circuit, a radio wave absorber having a desired frequency characteristic can be easily obtained. In particular, when the operations of the circuit elements 3 and 4 are program-controlled by a computer, the functionality of the material of the present invention can be further enhanced.

  In addition, by changing the crystallographic spatial arrangement of the unit cell 1, various properties with respect to electromagnetic waves such as reflectance, absorptivity, transmittance, anisotropy, polarization, attenuation, etc. can be easily controlled. . In particular, since the arrangement of the unit cells 1 is similar to that of a crystal body, various properties against electromagnetic waves can be inferred from the optical properties of the crystal. As a result, a medium having a large loss, a chiral medium, or anisotropic with respect to the electromagnetic waves at the time of design. Realization of a material exhibiting a conductive medium can be assumed relatively easily, and there is a great effect that it is not necessary to carry out complicated physical properties at the atomic and molecular structure level, which has been required for conventional material development.

  Of course, the unit cell 1 is not limited to a cube, and may be a planar two-dimensional structure as well as a three-dimensional structure having an appropriate shape such as a rectangular parallelepiped or a sphere. Of course, a unit cell having a two-dimensional structure and a unit cell having a three-dimensional structure can be used in combination.

  FIG. 5 shows a first embodiment relating to the unit cell 1 of the electromagnetic field sensitive functional material of the present invention used as a radio wave absorber.

  This unit cell 1 has a pair of upper and lower conductors 12 fixed to the surface of a rubber ferrite material 10, and a pair of diodes 14 are connected between the pair of conductors 12 to provide an electric field sensitive circuit 16 that is sensitive to vertical electric field changes. Have. These diodes 14 are supplied with a bias voltage from a bias circuit (not shown), and the conduction state of the diodes 14 is controlled by controlling the bias voltage. In FIG. 5, the polarities of the diodes 14 are opposite to each other between the pair of upper and lower unit cells 1, but it is not always necessary to have such a reverse polarity arrangement.

  In the unit cell 1, a pair of magnetic field sensitive circuits 18 sensitive to horizontal magnetic field changes are embedded in the rubber ferrite material 10 in a space surrounded by the conductor 12 and the diode 14 of the electric field sensitive circuit 16. This magnetic field sensitive circuit 18 has a pair of upper and lower diodes 20 and one end of the pair of diodes 20 connected by a conductor 22, and the other end of the pair of diodes 20 is connected by a microchip capacitor 24. Is a loop-like circuit. The polarity of the pair of diodes 22 is upside down. A bias voltage is also supplied to the diode 20 from a bias circuit (not shown).

  In these unit cells 1, a conductive plate 11 </ b> A is attached to the back surface of the rubber ferrite material 10 via a spacer 11. However, the conductor plate 11A is indispensable when used as a radio wave absorber, but is not necessary when used as a filter or an attenuator. Further, the radio wave absorber may not be rubber ferrite, and a radio wave absorber can be used as appropriate.

  These unit cells 1 are assembled in an appropriate arrangement in the upper, lower, left, and right directions. For example, the unit cells 1 are assembled in a regular arrangement such as a crystal lattice or an irregular arrangement such as a glass molecule to constitute an electromagnetic field sensitive functional material.

  A method of controlling the magnetic permeability of the electromagnetic field sensitive functional material composed of these unit cells 1, that is, the dielectric constant of the rubber ferrite material 10 will be described. In the case of permeability control, each diode 14 of the electric field sensitive circuit 16 is used with zero bias, and a variable bias voltage is applied to each diode 20 of the magnetic field sensitive circuit 18. Assume that an alternating electromagnetic field in which the electric field changes in the vertical direction and the magnetic field changes in the horizontal direction is incident on the unit cell 1. By this alternating electromagnetic field, a current is induced in the magnetic field sensitive circuit 18 so as to cancel the magnetic field. That is, a magnetic field having an opposite phase to the incident magnetic field is generated and acts to cancel the incident magnetic field. At this time, when the bias voltage applied to the diode 20 is changed, the resistance of the diode 20 is changed, the current induced in the electric field sensitive circuit 18 is changed, and the strength of the alternating magnetic field in the electromagnetic field sensitive functional material is also changed. To do. This means that the permeability of the electromagnetic field sensitive functional material, that is, the permeability of the rubber ferrite material 10 can be controlled by changing the bias voltage.

  Particularly, in the vicinity of the resonance frequency of the magnetic field sensitive circuit 18, if the diode 20 is changed to be conductive, appropriate resistance, high resistance, or non-conductive by the bias voltage, the resonance state of the magnetic field sensitive circuit 18 changes greatly. It can be changed greatly. Thus, the frequency characteristics of the magnetic permeability can be changed greatly. If the magnetic permeability changes, naturally, various electromagnetic properties such as reflectance, absorption, and transmittance with respect to electromagnetic waves also change.

  Next, a method for controlling the dielectric constant of the electromagnetic field sensitive functional material composed of these unit cells 1, that is, the dielectric constant of the rubber ferrite material 10 will be described.

  In the case of permittivity control, the diode 20 of the magnetic field sensitive circuit 18 is used with zero bias, and a variable bias voltage is applied to the diode 14 of the electric field sensitive circuit 16. It is assumed that an alternating electric field changing in the vertical direction is incident on the unit cell 1. A current flows through the diode 14 due to the potential difference induced between the conductors 12 by this alternating electric field. At this time, if the bias voltage applied to the diode 16 is changed to change the resistance of the diode 16, the potential difference between the pair of conductors 12 changes, and the strength of the alternating electric field in the electromagnetic field sensitive functional material also changes. At the same time, the capacitance value between the conductors 12A and 12B of the adjacent unit cells 1 also changes. This means that when the bias voltage is changed, the dielectric constant of the electromagnetic field sensitive functional material, that is, the dielectric constant of the rubber ferrite material 10 changes.

  Particularly, in the vicinity of the resonance frequency of the electric field sensitive circuit 16, if the diode 14 is changed to be conductive, appropriate resistance, high resistance, or nonconductive by the bias voltage, the resonance state of the electric field sensitive circuit 16 changes greatly, and the dielectric constant is also changed. It changes a lot. If the dielectric constant changes, naturally, electromagnetic properties such as reflectivity, absorption rate, and transmittance for electromagnetic waves also change.

  When the diode 14 of the electric field sensitive circuit 16 and the diode 20 of the magnetic field sensitive circuit 18 are changed at the same time, the dielectric constant and the magnetic permeability of the electromagnetic field sensitive functional material are changed at the same time. And various electromagnetic properties such as transmittance can be changed.

  As can be seen from the above description, the unit cell 1 shown in FIG. 5 has the effect of changing electromagnetic properties with respect to electromagnetic waves of vertically polarized waves (the vibration direction of the electric field is vertical and the vibration direction of the magnetic field is horizontal). There is. For horizontally polarized electromagnetic waves, the unit cell 1 shown in FIG.

  FIG. 6 shows the experimental results regarding the frequency characteristics of the reflectivity of electromagnetic waves when the bias voltages of the diodes 14 and 20 are changed in the electromagnetic field sensitive functional material of this example. In this experiment, the reflectivity was obtained by irradiating a conductor plate 11A with a 12 mm thick spacer 11 attached to the back of a 6.3 mm thick rubber ferrite to which the unit cell 1 was fixed. In FIG. 6, black circles (•) are when the bias voltage of the diode 20 is 0.0 V, white circles (.) Are when the bias voltage of the diode 20 is 1.0 V, and the frequency characteristic curve in the figure. The numerical value of 0.0 V to 1.0 V attached to indicates the bias voltage of the diode 14. From this, when a bias voltage is applied to each of the diodes 14 and 20, the reflectance can generally be reduced, but the reflectance at a specific frequency is particularly reduced, and by changing the bias voltage of each of the diodes 14 and 20, It can be seen that the frequency at which the reflectance can be reduced can be changed.

  In this embodiment, a plurality of magnetic field sensitive circuits 18 are provided in the unit cell 1, but only one electric field sensitive circuit 16 and one magnetic field sensitive circuit 18 may be provided in the unit cell 1. Further, in the electric field sensitive circuit 16, the pair of conductors 12 may be connected by only one diode 14 or may be connected by three or more diodes 14.

  FIG. 7 shows a second embodiment relating to the unit cell 1 of the electromagnetic field sensitive functional material of the present invention. This unit cell 1 has an electric field sensitive circuit 32 in which a pair of upper and lower conductors 12 are connected by a pair of photosensitive elements 30 such as CdS at a predetermined distance from the conductor plate 11A. An LED (light emitting diode) 34 is disposed in the vicinity of the LED. Of course, instead of the LED 34, an appropriate light emitter such as a light bulb or an optical fiber may be used, or all the LEDs 34 of the unit cell 1 may be controlled by one light emitter. As in the first embodiment, the unit cells 1 are also assembled in an appropriate arrangement vertically and horizontally to constitute an electromagnetic field sensitive functional material.

  According to the present embodiment, when the voltage supplied to the LED 34 is controlled, the resistance value of the photosensitive element 30 can be controlled. This is the same as applying a bias voltage to the diode 14 of the electric field sensitive circuit 16 of the first embodiment, and the capacitance value between the conductors 12A and 12B of the adjacent unit cell 1 also changes. The example also has an effect that the dielectric constant can be controlled as in the first embodiment. In addition, since the unit cell 1 has a two-dimensional structure with a small depth, a thin electromagnetic field sensitive functional material can be obtained, and it is easy to paste and use it on the surface of an existing material.

  FIG. 8 shows the experimental results of this example. In the experimental method, the unit cell 1 of this example was fixed with a space of 12 mm from the conductor plate 11A, and radio waves were irradiated to obtain the reflectance. In the first embodiment, the bias voltages of the diodes 14 and 20 are changed, but in this embodiment, the voltage applied to the LED 34 is changed from 0.0 V to 2.5 V. From this experiment, it can be seen that as the voltage applied to the LED 34 is increased, the reflectance can be decreased and the reflectance at a specific frequency is particularly decreased.

  In the electric field sensitive circuit 16, the pair of conductors 12 may be connected by one or three or more photosensitive elements 30.

  FIG. 9 shows a third embodiment of the present invention. The unit cell 1 shown in FIG. 9 has a cubic structure composed of photosensitive elements 30 and 36 such as CdS. However, in FIG. 9, the photosensitive element 36 having four sides extending in the depth direction is used as a fixed resistance of 1.0 MΩ. An LED (not shown) is disposed in the vicinity of the light sensitive element 30 other than the light sensitive element 36 serving as a fixed resistor. The unit cells 1 are also assembled in an appropriate arrangement in the vertical and horizontal directions and constitute an electromagnetic field sensitive functional material.

  Also in this embodiment, when the LED is turned on, the resistance value of the photosensitive element 30 changes. Therefore, the same effect as that of the second embodiment can be obtained. Moreover, since the unit cell 1 has a three-dimensional structure in the case of the present embodiment, the current caused by the electric field E, the current caused by the magnetic field H, and the progress of the electromagnetic wave, regardless of the incident electromagnetic wave having any plane of polarization. The unit cell 1 is sensitive to any current caused by the phase difference in the direction S, and the operation of the photosensitive element 30 is controlled, so that various electromagnetic properties can be effectively controlled. In addition, electromagnetic waves from near wave sources can be absorbed, and an unprecedented radio wave absorber can be realized.

  In FIG. 10, the simulation result regarding the reflectance of the electromagnetic field sensitive functional material of a present Example is shown. When the resistance value of each photosensitive element 30 is changed between 100Ω and 1600Ω, it can be seen that when the resistance value of each photosensitive element 30 is about 400Ω, the reflectance of radio waves is the lowest over the wide band.

  In the present embodiment, a diode may be used in place of the photosensitive element 30, and the operation of the diode may be controlled with an appropriate bias circuit.

  FIG. 11 shows a fourth embodiment of the present invention. The unit cell 1 shown in FIG. 11 has a cubic structure including only the photosensitive element 30. Then, an LED (not shown) is disposed in the vicinity of the photosensitive element 30. The unit cells 1 are also assembled in an appropriate arrangement in the vertical and horizontal directions and constitute an electromagnetic field sensitive functional material.

  Also in this embodiment, when the LED is turned on, the resistance value of the photosensitive element 30 changes. In addition, since the unit cell 1 has a cubic shape, it is sensitive to electromagnetic field changes in any direction, up, down, left, and right. Therefore, the same effect as that of the third embodiment can be obtained.

  FIG. 12 shows a simulation result regarding the reflectance of the electromagnetic field sensitive functional material of this example. When the resistance value of each photosensitive element 30 is changed between 100Ω and 1600Ω, it can be seen that when the resistance value of each photosensitive element 30 is about 400Ω, the reflectance of radio waves is the lowest over the wide band.

  In the present embodiment, a diode may be used in place of the photosensitive element 30, and the operation of the diode may be controlled with an appropriate bias circuit.

  13 and 14 show a fifth embodiment of the present invention. The electromagnetic field sensitive functional material of the present embodiment is used as a radio wave absorber.

  As shown in FIG. 13, in the unit cell 1, a diode 42 is inserted on each side of the electric field sensitive circuit 40 having a square loop made of a conductor. Inside the electric field sensitive circuit 40, a pair of front and rear cross conductors 44, a diode 46 connecting the tips of the pair of conductors 44, and a capacitor 48 inserted at the center of the rear cross conductor 44. It has the magnetic field sensitive circuit 16 which consists of these. A bias voltage is supplied to the diodes 42 and 46 from a bias circuit (not shown), and the conduction state of the diodes 42 and 46 is controlled by controlling the bias voltage. These diodes 42 and 46 can be changed to appropriate switching elements such as transistors.

  As shown in FIG. 14, the electric field sensitive circuit 40 is fixed to the surface of the rubber ferrite material 10, and the magnetic field sensitive circuit 50 is embedded in the rubber ferrite material 10. A conductor plate 11 </ b> A is attached to the back surface of the rubber ferrite material 10 via a spacer 11. However, the conductor plate 11A is indispensable when used as a radio wave absorber, but is not necessary when used as a filter or an attenuator. These unit cells 1 are assembled in an appropriate arrangement vertically and horizontally, for example, regularly assembled like a crystal lattice to constitute an electromagnetic field sensitive functional material.

  According to the present embodiment, since the electric field sensitive circuit 40 has a square shape, the electric field sensitive circuit 40 is sensitive to any electric field change in the horizontal direction x or the vertical direction y and controls the bias voltage of the diode 42 to control the diode 42. Since the conduction state can be changed, both the horizontally polarized waves and the vertically polarized electromagnetic waves can work in the same manner as the electric field sensitive circuit 16 of the first embodiment. Further, since the magnetic field sensitive circuit 50 has a cross shape when viewed from the front, it is sensitive to any magnetic field change in the horizontal direction x or the vertical direction y, and the conduction of the diode 46 is controlled by controlling the bias voltage of the diode 46. Since the state can be changed, both the horizontally polarized wave and the vertically polarized electromagnetic wave can work similarly to the magnetic field sensitive circuit 18 of the first embodiment.

  Therefore, the electromagnetic field sensitive functional material in which the unit cells 1 of the present embodiment are assembled is effective as a radio wave absorber regardless of the polarization plane of the electromagnetic wave incident from the front direction z.

  By the way, the electromagnetic field sensitive functional material of the present invention is not only used as a radio wave absorber. For example, the electromagnetic wave sensitive functional material is irradiated with a continuous electromagnetic wave serving as a carrier wave, and the operation of each circuit element of the unit cell 1 is controlled by a modulation signal, thereby changing the reflection coefficient of the continuous electromagnetic wave, It can also be used as a communication device that re-radiates an electromagnetic wave modulated by a modulation signal.

  Further, the electromagnetic field sensitive functional material of the present invention can realize a chiral medium, various anisotropies, desired frequency characteristics, reflection characteristics, attenuation characteristics, and the like. It can be applied to many electromagnetic devices such as filters, circulators, isolators, variable attenuators, variable matching loads, various displays, robots, etc.

  Furthermore, when the electromagnetic properties of each unit cell 1 are program-controlled by a computer and an antenna is provided in the radio wave absorber, only incoming radio waves of a specific frequency can be absorbed. can do.

It is a figure explaining the concept of the unit cell which comprises the electromagnetic field sensitive functional material of this invention. It is a figure which shows another example of the said unit cell. It is a figure which shows another example of the said unit cell. It is a figure which shows the electromagnetic field sensitive functional material which the said unit cell aggregated. It is a figure which shows the 1st Example of the unit cell which comprises the electromagnetic field sensitive functional material of this invention. It is a figure which shows the effect of the said 1st Example. It is a figure which shows the 2nd Example of the unit cell which comprises the electromagnetic field sensitive functional material of this invention. It is a figure which shows the effect of the said 2nd Example. It is a figure which shows the 3rd Example of the unit cell which comprises the electromagnetic field sensitive functional material of this invention. It is a figure which shows the effect of the said 3rd Example. It is a figure which shows the 4th Example of the unit cell which comprises the electromagnetic field sensitive functional material of this invention. It is a figure which shows the effect of the said 4th Example. It is a figure which shows the 5th Example of the unit cell which comprises the electromagnetic field sensitive functional material of this invention. It is a figure which shows the state which assembled the unit cell of the said 5th Example.

Explanation of symbols

1 Unit cell 12, 44 Conductor 14, 20, 42, 46 Diode (circuit element)
16, 32, 40 Electric field sensitive circuit 18, 50 Magnetic field sensitive circuit 30 Photosensitive element 34 LED (light emitting body)

Claims (3)

An electromagnetic field sensitive functional material in which unit cells having an electric field sensitive circuit sensitive to an electric field change and a magnetic field sensitive circuit sensitive to a magnetic field change are assembled,
Electromagnetic properties with respect to incident electromagnetic waves can be controlled by controlling operations of circuit elements incorporated in the electric field sensitive circuit or circuit elements incorporated in the magnetic field sensitive circuit. Field sensitive functional materials.   The circuit element in the electric field sensitive circuit and the circuit element in the magnetic field sensitive circuit are both diodes, and their operations are controlled by controlling a bias voltage. Field sensitive functional materials. An electromagnetic field sensitive functional material in which unit cells in which photosensitive elements are connected by conductors or resistors are assembled,
An electromagnetic field sensitive functional material characterized in that the electromagnetic properties with respect to an incident electromagnetic wave can be controlled by controlling the operation of the photosensitive element with a light emitter.

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