JP2005331651A - Method for forming three-dimensional structure, optical element manufactured by using the same, optical system, apparatus, device and method for manufacturing the device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To form a resin having a three-dimensional structure so as to have both of a smooth curved face and a steep perpendicular portion. <P>SOLUTION: In the process of forming a resin, having a three-dimensional structure by applying a photosensitive resin on a substrate, exposing the resin with certain distribution of the exposure light quantity for exposing the resin, and developing, regions adjacent to each other over a perpendicular portion are exposed, in a plurality of exposure steps and simultaneously developed. Thus, both of a smooth curved face and a steep perpendicular portion can be formed. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a three-dimensional structure forming method, a mask used in the three-dimensional structure forming method, an optical element manufactured using the three-dimensional structure forming method, a microlens, an optical system using the optical element, and an exposure using the optical system. The present invention relates to an apparatus, a device, and a device manufacturing method having an optical system such as an apparatus, a camera, a telescope, and a microscope.

In recent years, the demand for miniaturization of semiconductor elements has been increasing, and the line width has been cutting below 0.15 μm. For this reason, there is an increasing demand for improving the resolution of the projection exposure apparatus. In order to improve the resolving power of projection exposure apparatuses, higher NA of projection lenses and shorter exposure wavelengths have been increasingly accelerated in recent years. The exposure wavelength has been shortened from 248 nm using a KrF excimer laser as a light source to 193 nm using an ArF excimer laser as a light source and 157 nm using an F ₂ laser as a light source.

In the optical system, there is an aberration called chromatic aberration that deteriorates the imaging performance caused by the difference in the refractive index of the glass material depending on the wavelength of light. For this reason, in a projection exposure apparatus using a KrF excimer laser as a light source, a KrF excimer laser narrowed to emit single light is used. Further, in a projection exposure apparatus using an ArF excimer laser as a light source, achromation is performed using two glass materials of quartz and fluorite (CaF ₂ ) for the projection optical system.

When 157 nm using an F ₂ laser as a light source is used as an exposure wavelength, glass materials that transmit light are limited. Today, glass materials that have been found to provide satisfactory transmission for a wavelength of 157 nm include fluorite (CaF ₂ ), magnesium fluoride (MgF ₂ ), lithium fluoride (LiF), etc. Fluorite (CaF ₂ ) is the only glass material that can achieve the uniformity of the glass material and the large diameter of the crystal necessary for use in the projection optical system of the projection exposure apparatus. For this reason, it is not possible to perform achromation using two glass materials unlike a projection exposure apparatus using an ArF excimer laser as a light source.

  For this reason, a projection optical system known in Japanese Patent Application Laid-Open No. 2001-228401 has been proposed that performs achromaticity using a catadio system using a mirror as well as a refractive lens. A projection optical system using a mirror needs to configure the optical system so as not to block light in the mirror, and the imaging region is an arc region having a specific height from the axis.

  In a projection exposure apparatus that projects a pattern drawn on a mask onto a substrate coated with a photosensitive agent using a projection optical system in which an imaging area is an arc area, an illumination optical apparatus that illuminates the mask in an arc shape Necessary. The illumination optical device that uses an arc region as an illumination region in the prior art illuminates a rectangular shape and cuts out the arc region with a field stop.

  An illumination apparatus for a scanning projection exposure apparatus using a projection optical system having a conventional arc area as an imaging area will be described with reference to FIG.

Reference numeral 1 denotes an F ₂ laser serving as a light source. The F ₂ laser emits light having a wavelength of 157 nm.

Reference numeral 2 denotes a dimming means for controlling the illuminance on the irradiated surface. When using a pulsed light source such as F ₂ laser as an exposure light source of the scanning type projection exposure apparatus, the exposure dose variations occur due to output variations between the laser pulses. For this reason, it is necessary to reduce the exposure variation by setting the number of pulses to be exposed to a predetermined number or more and averaging the pulse variation. Therefore, when the sensitivity of the photosensitizer is high. It is necessary to reduce the illuminance by dimming the light so that exposure is performed with a predetermined number of pulses or more. 2 is a dimming means for that purpose.

3 is a beam rocking means. Since the F ₂ laser has coherence, speckles are generated on the illuminated surface. When speckles occur, unevenness in illuminance occurs on the surface to be illuminated, resulting in variations in the exposure amount, and the problem arises that the line width of the image printed from the mask to the substrate varies from place to place (CD uniformity deteriorates). For this reason, the beam is oscillated and the speckle distribution is oscillated to average the time during exposure. As a method of swinging the beam, a method of rotating a tilted parallel plate or a method of swinging a mirror is used. There is a method of rotating the wedge prism.

  Reference numeral 4 denotes a haenom lens, and reference numeral 5 denotes a condenser lens. Koehler illumination is performed on the entrance plane of the 6 haenome lens using the 5 condenser lens by the secondary light source formed on the exit surface of the 4. The No. 4 haume lens is placed on the turret, and by switching, the emission NA from the hano lens is changed, and the irradiation range on the entrance plane of the 6 hano lens is changed. This is to prevent the light intensity distribution on the exit plane of the 10 haenome lens from condensing when the magnification of the 9 relay lens is changed.

  Reference numeral 6 is a haenome lens, and 7 is a condenser lens. The effective light source forming aperture of 8 is Koehler-illuminated by using a condenser lens of 7 with a tertiary light source formed on the exit surface of 6. Due to the configuration of the two-stage Haenome lens from 4 to 7, even if the profile of the laser beam changes, the distribution of light at the effective light source forming stop of 8 does not change, and a uniform effective light source can always be formed. For example, if there are no 4th and 5th stage Haenome lenses, the light intensity distribution on the entrance surface 6 changes when the position distribution from the laser changes. Angular distribution changes. If the angular distribution of the light changes, the light intensity distribution on the exit surface of the 10 Haenome lens, which will be described later, shifts, so that the angular distribution on the 17 substrate is inclined, and when the substrate is defocused, the transfer position of the transfer pattern is changed. The on-axis telecentricity changes. Therefore, the configuration is a four-stage two-stage haenote lens.

  Reference numeral 8 denotes an effective light source forming diaphragm. The effective light source is the shape of the illumination light source that illuminates the reticle surface. The shape of the effective light source is usually circular. On the other hand, as the sixth lens, a square lens that has a rectangular outer lens element lens, a hexagonal lens that has a hexagonal outer lens element, and a cylindrical lens array in which cylindrical lenses are arranged as element lenses are used. For this reason, the distribution formed on the light source side of the effective light source forming diaphragm 8 is a square in the case of a square lens and a cylindrical lens array, and a hexagon in the case of a hexagonal lens. Therefore, in order to make the shape of the effective light source circular, eight effective light source forming stops having a circular opening are required.

  Reference numeral 9 denotes a zoom relay lens, which projects a circular light intensity distribution formed by the effective light source forming stop 8 at a predetermined magnification on the entrance plane of the 10 haenome lens. The size of the illumination light source that illuminates the reticle is called a coherence factor, and it is desired to be variable according to the pattern to be transferred in order to improve the performance of the projection optical system. In order to realize this, the size of the irradiation area on the entrance plane of the 10 haenome lens can be changed by changing the magnification of the 9 relay optical system.

  Reference numeral 10 denotes a haenometer lens, and 11 denotes a condenser lens. Illuminate the 13 masking blades with a uniform illuminance distribution using a quaternary light source formed on the 11 Haenome lens exit surface.

  Reference numeral 12 denotes a slit for controlling the illumination area of the surface to be illuminated. As the 10 haenometer lenses, a square haenometer lens having a quadrilateral outer shape of the element lens of the haenome lens or a cylindrical lens array in which cylindrical lenses are arranged as element lenses is used. Therefore, the position of the 12 slits is illuminated in a rectangular shape. However, since the imaging area of the projection optical system is an arc as described above, the illumination area must be an arc. For this purpose, the twelve slits have the circular arc opening of FIG. Further, in the scanning projection exposure apparatus, it is possible to correct the uneven exposure amount in the direction perpendicular to the slit by changing the width of the slit in the direction perpendicular to the slit, so that the slit width can be adjusted. desirable.

  Reference numeral 13 denotes a masking blade for controlling the exposure area. In order to obtain a desired exposure region, it is driven in accordance with scanning exposure.

  A masking imaging lens 14 projects the light intensity distribution 13 onto the 15 reticle planes.

  Reference numeral 15 denotes a reticle on which a circuit pattern is drawn. For a wavelength of 157 nm, sufficient transmittance cannot be obtained with a conventional quartz substrate reticle. Therefore, it is necessary to use a substrate having a high transmittance with respect to a wavelength of 157 nm, such as F-doped quartz or fluorite.

  Reference numeral 16 denotes a catadiographic projection optical system which achromatically erases with a lens and a mirror to achieve good imaging performance in an arc imaging region.

  Reference numeral 17 denotes a substrate coated with a photosensitive agent. A circuit pattern of 15 reticles is projected by 16 projection optical systems. The substrate on which 15 reticles and 17 photosensitizers are applied is scanned and exposed in synchronism, and is exposed to an exposure area wider than the imaging area of the projection optical system.

  Reference numeral 18 denotes a stage on which 17 substrates are placed, and performs scanning at the time of exposure and steps performed for each shot.

  According to the above prior art, in order to illuminate the arc region, arc cutting is performed with 12 slits from the rectangular illumination region. For this reason, the light is kicked by the slit, so that the illumination efficiency is lowered and high illuminance cannot be obtained on the photosensitive substrate. If high illuminance is obtained on the photosensitive substrate, the exposure time can be shortened, and the transfer (throughput) of the circuit pattern per unit time can be increased. Therefore, it is required to achieve high illuminance on the photosensitive substrate.

  As a technique for increasing the illuminance, there is a method using an optical fiber proposed in Japanese Patent Publication No. 5-68846, and an arc haenome lens in which the outer shape of the element lens of the hanom lens proposed in JP-A 62-115718 is an arc shape. A method of using it has been proposed.

  The method using an optical fiber is difficult to put into practical use because the homogenization by the optical fiber is not good and the optical fiber for the wavelength of 157 nm is not possible.

  A method using an arc-shaped hammer lens is also difficult to put into practice by a conventional manufacturing method using polishing or grinding. In the conventional manufacturing method of the arc-shaped haenom lens, after processing the rod lens, the outer shape is cut into an arc shape, which is very time-consuming and has a large processing error. For this reason, the arc-shaped haume lens is expensive, and the processing error is increased by stacking the element lenses, so that the overall performance is not achieved. Therefore, the method of using the circular arc halenome lens has been difficult to use in the past.

  However, in recent years, a microlens array (MLA) processing method using a photolithography technique has been proposed. Therefore, a method for achieving high illuminance by manufacturing an arc-shaped hanomome lens with a microlens array has been studied. The arc haenom produced with the microlens array is hereinafter referred to as arc MLA. The arc MLA can be manufactured at a relatively low cost when manufactured by photolithography. In addition, since the element lenses are not stacked, processing errors do not increase and the performance is not deteriorated. FIG. 2 shows an example of a cross section of the arc MLA viewed from the R plane. The A section has a curved surface, and the B section has a vertical portion and a curved surface.

  However, in the conventional photolithography technique, a circuit pattern is designed by a combination of an opening formed in a mask and a light shielding portion, and the pattern is transferred to photosensitive resin by exposure light transmitted through the mask. At this time, the circuit pattern is entirely drawn on a two-dimensional plane, and generally the thickness direction of the pattern to be manufactured is not considered.

  In recent years, there have been attempts to control the shape in the height direction by partially adjusting the exposure amount. As an attempt to control the shape in the height direction, for example, JP-A-63-289817 discloses a method of forming a three-dimensional shape in a photoresist (photosensitive resin). This will be described with reference to FIG.

  As shown in FIG. 12-a, a relationship between an arbitrary exposure amount and a remaining film amount can be obtained by experimentally obtaining a characteristic curve of a positive photoresist in advance. Here, let us consider a small area (Fig. 12-b) as a unit, and 9 pieces of 3x3 as a unit. In the figure, 52 is a light shielding part and 51 is an opening. The density distribution of the apertures can be changed discretely by changing the number ratio of the light shielding portions to the apertures among the nine (FIG. 12-c). This density distribution, that is, the intensity distribution generated by the transmittance distribution is converted into a change in the resist film thickness due to the sensitivity characteristics of the positive resist (FIG. 12-d).

Thereafter, anisotropic etching is performed on the photoresist and the substrate, and the surface shape of the photoresist is engraved on the optical substrate and transferred. As a result of the transfer, a desired three-dimensional structure can be obtained on the surface of the substrate. Japanese Patent Application Laid-Open No. 2002-287370 discloses a method of manufacturing an optical element having a three-dimensional structure by etching an optical member using such a three-dimensional resist.
JP 2001-228401 A JP 5-68846 JP-A-62-115718 JP-A-63-289817 JP 2002-287370 A

  As described in the above prior art, when a photoresist or the like, which is a photosensitive resin, is formed on a substrate, the distribution of the amount of exposure light that the photoresist is exposed to, and exposure development is performed to form a three-dimensional structure. A transmittance distribution is produced with a small area on the mask as a minimum unit, which is below the resolution limit. Therefore, as shown in FIG. 12d, in order to make the intensity distribution on the staircase a smooth resist film thickness distribution, a curved surface such as resist selection and developer type concentration can be obtained, such as defocusing during exposure. It is necessary to devise for this purpose. However, when a three-dimensional structure having both a curved surface and a vertical portion is produced by lithography, it is very difficult to form the curved surface portion and the vertical portion at one time. This is because the optimum conditions for shape formation are contradictory between the curved surface portion and the vertical portion. That is, when the optimum condition for the curved surface is used, the portion that should be the vertical portion has an inclination, the effective curved surface area decreases, and the efficiency deteriorates. When the three-dimensional structure is an optical element such as an arc MLA or a diffraction grating shown in FIG. 2 or FIG. 7, unnecessary light is emitted from the inclined portion, which causes flare and the main light. It was. On the other hand, when the optimum conditions were used for the vertical portion, a step appeared on the curved surface, and the desired shape could not be obtained. When the three-dimensional element is an optical element, it becomes scattered light as the surface roughness deteriorates, and as an efficiency deterioration, it also has a negative effect on the optical system as a flare.

  The above problems are solved by the present invention described below.

  That is, the present invention forms a resin having a three-dimensional structure by coating a photosensitive resin on a substrate, providing a distribution in the amount of exposure light that the resin sensitizes, and exposing and developing the resin. In the process, the three-dimensional structure forming method is characterized in that a region adjacent to the vertical portion is exposed in at least a plurality of exposure steps and simultaneously developed. Furthermore, there are an optical element, an optical system, an exposure apparatus, a camera, a telescope, a microscope, and other devices, devices, and device manufacturing methods that are manufactured by using the three-dimensional structure forming method.

  As described above, in the process of forming a resin having a three-dimensional structure by applying and forming a photosensitive resin on the substrate, giving the distribution of the amount of exposure light that the resin sensitizes, and exposing and developing the resin. By exposing the region adjacent to the vertical part in at least a plurality of exposure steps and developing it at the same time, both a smooth curved surface and a steep vertical part can be formed at the same time. Moreover, a substrate having a desired three-dimensional structure could be obtained by etching the substrate using the resin as a mask. Furthermore, by using the three-dimensional structure forming method, high efficiency, high accuracy, high performance optical elements, optical systems, exposure apparatuses, cameras, telescopes, microscopes, and other devices, devices, and devices using the optical systems A manufacturing method could be obtained.

(Example 1)
FIG. 1 is a drawing showing the three-dimensional structure forming method of the present invention, and shows a cross-sectional view in the diameter direction passing through the center. FIG. 2 shows an arc microlens array to be manufactured in this embodiment. The microlens array in FIG. 2 is configured by collecting a plurality of spherical lenses. The figure seen from the R surface of MLA and an example of the cross section are shown. The A section has a curved surface, and the B section has a vertical portion and a curved surface.

In FIG. 1, reference numeral 21 denotes a synthetic quartz substrate that can be used for ultraviolet rays. In particular, when used as an optical element for an F ₂ laser, F-doped quartz or fluorite is used. On the substrate 21, AZ-P4620 (manufactured by Clariant) was applied using a coater to form a resist 22 as shown in FIG.

  A transmittance distribution designed to obtain a desired three-dimensional structure was produced by dividing it into two masks 23a and 23b. The first mask 23a is divided into a portion where the transmittance distribution is almost zero (light shielding portion) and a portion having the distribution. 23b having a configuration opposite to that of 23a is also produced. First, exposure is performed using the mask 23a (FIG. 1B). Further, exposure is performed using the mask 23b (FIG. 1C). Although the plan view of the mask is represented by a square as a schematic diagram, it is actually in the shape of one element (arc). By developing using a dedicated developer, a photosensitive resin 22 ′ having a three-dimensional structure was produced, and FIG. 1D was obtained. As for the shape of the photosensitive resin 22 ′, the vertical portion was substantially vertical and the curved surface was smoothly formed.

  Depending on the wavelength (for example, He—Ne laser, 633 nm) at which the optical element is used, the three-dimensional structure formed of the photosensitive resin 22 ′ can be used as an optical element as it is.

  In this example, anisotropic etching with a selectivity of 1 was performed using a dry etching apparatus to transfer the shape of the photosensitive resin 22 ′ to the quartz substrate, and FIG. 1E was obtained.

  Since there are few ineffective areas, an optical element with high efficiency and low unnecessary light could be manufactured.

(Comparative Example 1)
FIG. 5 is a drawing showing a three-dimensional structure forming method of a comparative example, and a substrate coated with a resist similar to that of Example 1 is used. (Fig. 5 (a))
A transmittance distribution designed to obtain a desired three-dimensional structure is formed on one mask 23. As shown in FIG. 5B, exposure and development were performed in the same manner as in Example 1 to form a photosensitive resin 22 ′ having a three-dimensional structure.

  The photosensitive resin 22 'was formed with a smooth curved surface, but the vertical portion was inclined and the skirt spread as shown in the enlarged view of FIG. 5B.

  Because there are many ineffective areas, the efficiency is low and unnecessary light is generated.

(Example 2)
FIG. 3 is a drawing showing the three-dimensional structure forming method of the present invention, and shows a sectional view in the diameter direction passing through the center.

  In FIG. 3, reference numeral 24 denotes a ceramic substrate serving as a glass mold. In this example, SiC that can be processed by either fluorine-based or chlorine-based gas was used. Ceramics are excellent as glass molds because they are resistant to repeated heating and cooling at high temperatures and are low thermal expansion materials. However, there are problems such as difficulty in surface properties and processing. The surface property can be easily solved with a coating of a noble metal or the like. However, with regard to the workability, it has been a big problem as the required processing accuracy and shape become complicated.

  A resist 22 was formed on the substrate 24 using a coater of PMER P-LA900PM (manufactured by Tokyo Ohka Co., Ltd.) as shown in FIG.

  A transmittance distribution designed to obtain a desired three-dimensional structure was produced by dividing it into two masks 23a and 23b. The first mask 23a is divided into a portion where the transmittance distribution is almost zero (light shielding portion) and a portion having the distribution. 23b having a configuration opposite to that of 23a is also produced. First, exposure is performed using the mask 23a (FIG. 3B). Further, exposure is performed using the mask 23b (FIG. 3C). By developing using a dedicated developer, a photosensitive resin 22 ′ having a three-dimensional structure was produced, and FIG. 3D was obtained. As for the shape of the photosensitive resin 22 ', the vertical portion was formed almost vertically and the curved surface was formed smoothly.

  In this example, the shape of the photosensitive resin 22 ′ was transferred to the SiC substrate 24 by performing anisotropic etching with a selection ratio of 1 using a dry etching apparatus, as shown in FIG. Pt was coated on the SiC substrate 24 and used as a glass mold as shown in FIG. 3F to form a glass 25 (FIG. 3G).

  Can withstand high-temperature molding, can easily process complex shapes such as aspheric surfaces, and has few ineffective areas, so it can produce optical elements in large quantities at low cost with high efficiency and low unnecessary light. I was able to.

(Example 3)
FIG. 4 is a diagram for explaining an embodiment of the present invention. An arc MLA is produced in the same manner as in Example 1.

  In Example 1, the transmittance distribution designed to obtain a desired three-dimensional structure was divided into two masks 23a and 23b. In this case, a mask having a length larger by one element or more in either the x or y direction than the necessary region is prepared.

  In the first exposure, the first exposure area (S1) of the mask is exposed. The area other than S1 may be masked with a masking blade or the like, or may be exposed without being covered as it is when exposed to an unused area of the substrate. In the second exposure, the same mask is used, the position of one element is moved, and the second exposure area (S2) of the mask is exposed.

  Depending on the alignment accuracy of the exposure apparatus used and the size of the element, when the size of one element is on the order of μm or more and a stepper is used for the exposure apparatus, it can be manufactured with sufficient accuracy. It was possible to produce an optical element with lower mask manufacturing cost, higher efficiency and less unnecessary light.

Example 4
FIG. 6 is a diagram illustrating an embodiment of the present invention. An arc MLA is produced in the same manner as in Example 1.

  Since the arc MLA has only one vertical portion in either the X or Y direction, a mask as shown in FIG. 6 is prepared. Since alignment is only in one direction, the source of error is reduced. Exposure may be performed using two masks as in the first embodiment and one mask as in the third embodiment.

(Example 5)
FIG. 7 is a diagram for explaining the fifth embodiment. A blazed diffraction grating as shown in FIG. 7 is produced. Although it has a curved surface and a vertical part, since the vertical part occurs in a circle, the mask is divided into a circle. A transmittance distribution designed to obtain a desired three-dimensional structure is produced by dividing it into two masks 23a and 23b. Unlike microlenses, exposure cannot be performed with the same mask shifted. Except for the mask, the same processes as in Example 1 are performed. By producing a diffraction grating as described above, since there are few ineffective areas, an optical element with high efficiency and little unnecessary light could be produced.

(Example 6)
FIG. 8 shows an optical system and a semiconductor exposure apparatus according to the present invention. FIG. 8 shows the same configuration as that shown in the conventional example, except that an arc MLA is mounted at 10. The arc MLA is manufactured using any one of the methods of Examples 1 to 4.

  A high-resolution, high-performance semiconductor exposure apparatus could be obtained.

(Example 7)
An embodiment of a method for manufacturing a semiconductor device (semiconductor element) using a semiconductor exposure apparatus equipped with the fly-eye lens described in Embodiment 6 will be described.

  FIG. 9 is a flowchart of manufacturing a semiconductor device (a semiconductor chip such as an IC or LSI, or a liquid crystal panel or a CCD). In this embodiment, in step 1 (circuit design), a semiconductor device circuit is designed. In step 2 (mask production), a mask on which the designed circuit pattern is formed is produced. On the other hand, in step 3 (wafer manufacture), a wafer is manufactured using a material such as silicon. Step 4 (wafer process) is called a pre-process, and an actual circuit is formed on the wafer by the prepared semiconductor exposure apparatus.

  The next step 5 (assembly) is called a post-process, and is a process for forming a semiconductor chip using the wafer manufactured in step 4, and is a process such as an assembly process (dicing, bonding), a packaging process (chip encapsulation), or the like. including.

  In step 6 (inspection), the semiconductor device manufactured in step 5 undergoes inspections such as an operation confirmation test and a durability test. Through these steps, the semiconductor device is completed and shipped (step 7).

  FIG. 10 is a detailed flowchart of the wafer process in Step 4 above. First, in step 11 (oxidation), the wafer surface is oxidized. In step 12 (CVD), an insulating film is formed on the wafer surface.

  In step 13 (electrode formation), an electrode is formed on the wafer by vapor deposition. In step 14 (ion implantation), ions are implanted into the wafer. In step 15 (resist process), a resist is applied to the wafer.

  In step 16 (exposure), the circuit pattern of the mask is printed on the wafer by exposure using the prepared semiconductor exposure apparatus. The wafer is loaded, the wafer is opposed to the mask, the misalignment between the two is detected by the alignment unit, and the wafer stage is driven to align the two. If both match, exposure is performed. After the exposure is completed, the wafer moves stepwise to the next shot and repeats the operations following alignment.

  In step 17 (development), the exposed wafer is developed. In step 18 (etching), portions other than the developed resist are removed. By repeatedly performing these steps, multiple circuit patterns are formed on the wafer.

  If the manufacturing method of this embodiment is used, it is possible to cope with mass production of highly integrated semiconductor devices that have been difficult to manufacture.

It is a figure explaining the manufacturing process which concerns on 1st Example of this invention. It is a figure explaining the structure which concerns on the 1st Example of this invention. It is a figure explaining the manufacturing process which concerns on the 2nd Example of this invention. It is a figure explaining the mask which concerns on the 3rd Example of this invention. It is a figure explaining the manufacturing process which concerns on a comparative example. It is a figure explaining the mask which concerns on the 4th Example of this invention. It is a figure explaining the structure which concerns on the 5th Example of this invention. It is a figure explaining the exposure apparatus which concerns on the 6th Example of this invention. It is a figure explaining the slit of the exposure apparatus which concerns on the 6th Example of this invention. It is a manufacturing flow of a semiconductor device concerning the 7th example of the present invention. It is a detailed flow of the wafer process in the manufacturing flow of the semiconductor device based on the 7th Example of this invention. It is a figure explaining the three-dimensional structure formation method.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 F ₂ Laser 2 Dimming means 3 Beam rocking means 4, 6, 10 Haenome lens 5, 7, 11 Condenser lens 8 Effective light source aperture 9 Relay lens 12 Slit 13 Masking blade 14 Masking imaging lens 15 Reticle 16 Projection optics System 17 Wafer 21 Substrate 22, 22 'Resist (photosensitive resin)
23, 23a, 23b Mask 24 Substrate (mold)
25 Optical elements

Claims (13)

  In the process of forming a resin having a three-dimensional structure by coating and forming a photosensitive resin on the substrate, providing a distribution in the amount of exposure light that the resin sensitizes, and exposing and developing the resin, the vertical portion is bordered. A method for forming a three-dimensional structure, wherein a region adjacent to the substrate is exposed in at least a plurality of exposure steps and developed simultaneously.   By applying and forming a photosensitive resin on the substrate, applying and forming the photosensitive resin on the substrate to which the resin is exposed, giving the distribution of the amount of exposure light to which the resin is exposed, and exposing and developing the resin, 3 Forming a resin having a three-dimensional structure by etching a substrate having a three-dimensional structure by forming a resin having a three-dimensional structure, and etching the substrate using the resin as a mask; A method for forming a three-dimensional structure, characterized by exposing and developing simultaneously.   The three-dimensional structure forming method according to claim 1 or 2, wherein the substrate is an optical member.   The method for forming a three-dimensional structure according to claim 1 or 2, wherein the substrate is a mold.   3. The three-dimensional structure forming method according to claim 1, wherein the mask used for exposure is divided into a light shielding portion and a portion having a distribution in transmittance.   3. The three-dimensional structure forming method according to claim 1, wherein the same substrate is exposed a plurality of times with the same mask at a position shifted by a certain amount in a plane.   3. The three-dimensional structure forming method according to claim 1, wherein the same substrate is exposed a plurality of times with different divided masks.   An optical element manufactured using the three-dimensional structure forming method according to claim 3.   A microlens manufactured using the three-dimensional structure forming method according to claim 3.   An optical system comprising at least one optical element according to claim 8 or 9.   An apparatus comprising at least one optical system according to claim 10.   A device manufacturing method manufactured using the apparatus according to claim 11.   A device manufactured using the apparatus according to claim 11.

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