JP2005328095A - Exoergic control method of circuit, equipment, and system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an efficient heating control technology of a semiconductor integrated circuit, and a technology for correctly evaluating the effects of heating control. <P>SOLUTION: A hollow glass plate 20 on a flat surface is bonded to a die 16 rear surface of a processor, and a cooling medium is made to flow in the inside. The die 16 is picturized with an infrared camera 24, and a heat-detecting unit 34 acquires temperature distribution. When one part of the die 16 becomes abnormally high in temperature, an analyzing unit 36 increases a driving force of a pump 26, or instructs a processor 18 to lower the operating frequency. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a heat generation control technique, and more particularly to a method, apparatus and system for controlling heat generation in a semiconductor integrated circuit.

  In LSI design, the miniaturization of the manufacturing process and the high integration of elements have further progressed, and it has become very important for LSI design to consider the amount of heat generated as the performance limit of the chip. When the chip becomes hot, malfunctions occur and long-term reliability decreases, so various countermeasures against heat generation are taken. For example, there is a method in which a heat sink is provided on the top of the chip to release heat generated from the chip.

  In recent LSIs, particularly high-performance microprocessors, heat generation that cannot be removed by a heat sink can occur, so improvement of heat dissipation efficiency and suppression of heat generation are permanent issues. When developing a product incorporating an LSI, it is necessary to guarantee a heat dissipation effect or a heat generation suppression effect at the set level. As a premise, it is necessary to correctly evaluate these effects during product development.

  The present invention has been made in view of these problems, and an object thereof is to provide an efficient thermal control technique for a semiconductor integrated circuit. Another object of the present invention is to provide a technique for correctly evaluating the effect of thermal control.

  The present invention is a circuit heat generation control technology, which acquires a heat generation state of a semiconductor integrated circuit with a two-dimensionally dense resolution, and performs control for changing the heat generation state of the semiconductor integrated circuit according to the acquired heat generation state. Is what you do.

  ADVANTAGE OF THE INVENTION According to this invention, the heat_generation | fever of a semiconductor integrated circuit can be controlled efficiently or the effect of thermal control can be evaluated correctly.

Outline of the embodiment
As a method of measuring the temperature on the die of a microprocessor (hereinafter simply referred to as a processor), a method using the temperature characteristics of the forward voltage of the PN junction of the thermal diode and the frequency of the ring oscillator can be considered. However, it is not easy to embed them in an actual device due to mounting area and other circumstances. Further, in order to accurately measure the temperature distribution, it is necessary to embed a large number of such temperature sensors, which has a great design disadvantage.

  From this viewpoint, the embodiment first acquires the heat generation state of the semiconductor integrated circuit with a two-dimensionally dense resolution, and performs control for changing the heat generation state of the semiconductor integrated circuit in accordance with the acquired heat generation state. Here, “changing the heat generation state” includes a case where the heat release state is first changed and the heat generation state is changed as a result. When an imaging sensor such as an infrared sensor that is two-dimensionally dense is used, temperature measurement with the number of points corresponding to the resolution is realized at a time. This solves the above problem.

  Note that an infrared sensor is used as an example of the imaging sensor, but in the embodiment, an infrared camera in which an infrared sensor and an optical system mechanism such as a lens are combined is used. This camera is known in the field of infrared thermography technology, and is an apparatus that measures and images the surface temperature or temperature distribution of an object. In the embodiment, since the temperature is detected by a technique called imaging, it is possible to measure the temperature in a non-contact manner from a position away from the target semiconductor circuit device. Can be increased. In addition, since it is a method of grasping as a temperature distribution of a surface, relative measurement of points on the surface is possible, and it is easy to specify a high-temperature location with a simple configuration. More specifically, the embodiment relates to the following technique.

  1. An imaging sensor is provided. A semiconductor integrated circuit is imaged by this sensor. The flip chip package semiconductor integrated circuit is convenient for imaging because the back surface of the die is exposed. However, there is no problem even if the semiconductor integrated circuit is sealed in a normal plastic package. The heat detection unit acquires the heat generation state of the semiconductor integrated circuit from an image obtained by imaging (referred to as an “inspection image”). The cooling control unit controls the means for cooling the semiconductor integrated circuit according to the acquired heat generation state, for example, the rotational speed of the fan and the circulation speed of the refrigerant (mainly Embodiment 4).

  2. The heat detection unit acquires the temperature distribution of the semiconductor integrated circuit, particularly the exposed surface thereof, from the inspection image, and when the temperature exceeds a predetermined threshold at any point of the semiconductor integrated circuit, the cooling control unit The cooling capacity of the means is increased (mainly Embodiments 1, 2, 3, 4).

  3. Instead of or in addition to the cooling control unit, an operation control unit for controlling the operation state of the semiconductor integrated circuit according to the acquired heat generation state is provided. When the temperature exceeds a predetermined threshold at any location of the semiconductor integrated circuit, the operation control unit performs processing per unit time at the location where the temperature exceeds the threshold (this is referred to as “high temperature location”). To reduce the load. Therefore, the operating frequency of the semiconductor integrated circuit may be reduced (mainly Embodiment 4).

  4). A semiconductor integrated circuit, in particular, a transparent cooling mechanism fixed in close contact with the exposed surface is provided. Here, “transparent” is transparent in the sense that it does not interfere with temperature measurement. That is, when temperature measurement is performed using an infrared sensor, it is important to be transparent in the infrared region in order to detect infrared rays emitted from the heating element, and does not need to be transparent to the eye. Further, it is not necessary to be completely transparent even in the infrared region, and it is sufficient that the transmittance has a transmittance capable of detecting the temperature of the semiconductor integrated circuit that is a heating element by correction. The cooling mechanism has a hollow portion and is provided with a flow path through which a fluid such as liquid or gas can flow. As a cooling mechanism having a hollow portion, for example, a flat pipe or a cooling fluid passage formed in a solid such as glass is included. A driving mechanism such as a pump circulates a liquid or gaseous refrigerant inside the cooling mechanism. An image sensor is used to image a semiconductor integrated circuit through a cooling mechanism. The heat detection unit acquires the heat generation state of the semiconductor integrated circuit from the inspection image captured by the sensor (mainly Embodiments 1, 2, 3, and 4). Thereafter, the acquired heat generation state is analyzed by the analysis unit. Note that “transparent” is transparent in the sense that it does not impair the detection function of the sensor, and need not be transparent to the eye. Actually, detection by the sensor is affected by various factors such as the color, emissivity, and measurement angle of the cooling mechanism, and these factors may be finally determined experimentally (mainly the first embodiment). 2, 3).

  In 5.4, the drive mechanism may appropriately change the flow direction of the refrigerant. This is useful for evaluating fever. The analysis unit may integrate and analyze the heat generation state detected before and after the refrigerant flow direction changes. For example, the direction may be reversed, the average of the heat generation states obtained before and after that may be taken, and this may be regarded as the actual heat generation state or temperature distribution. Hereinafter, since the “heat generation state” can be grasped by the “temperature distribution”, the two are not distinguished from each other unless particularly necessary (mainly the first embodiment).

  In 6.4, the analysis unit may analyze the heat generation state in consideration of a temperature gradient depending on the refrigerant flow direction. After the refrigerant leaves the drive mechanism, the upstream is cooler. As this takes heat away from the semiconductor integrated circuit, particularly its exposed surface, the temperature increases. Therefore, the temperature distribution obtained by performing the inclination correction that minus the upstream temperature and plus the downstream temperature may be regarded as the actual temperature distribution (mainly the first embodiment).

  In 7.4, the transparent cooling mechanism may not have a hollow portion. In other words, the cooling mechanism may be, for example, a heat spreader on a transparent plane. In this case, the cooling mechanism may be configured by an air cooling fan, a Peltier element, a jet cooling device, or the like instead of the drive mechanism in the pump or the like (mainly the second embodiment).

  8). Although the above apparatus uses a sensor, a technique for enhancing the heat dissipation effect of the semiconductor integrated circuit is useful, apart from the presence or absence of the sensor. Therefore, the cooling mechanism and the drive mechanism described above are provided, and the cooling mechanism has an opening that matches the exposed surface of the semiconductor integrated circuit, in particular, and at least the edge of the opening is closely fixed to the corresponding portion on the semiconductor integrated circuit side. May be. In this case, since the refrigerant directly contacts the semiconductor integrated circuit at the opening, the effect of removing heat is high (mainly the fifth embodiment).

Embodiment 1 FIG.
The present embodiment relates to an apparatus that evaluates in advance how a semiconductor integrated circuit generates heat in a set (hereinafter simply referred to as “set”) that is a final product in a development stage. Hereinafter, the semiconductor integrated circuit is assumed to be a processor having a large calorific value. In the set, the processor is equipped with a heat spreader for diffusing heat and a heat sink on the heat spreader. In such a state, the surface temperature of the processor cannot be measured. Therefore, in this apparatus, the heat sink or the like is removed and a transparent heat radiating means is provided, through which the processor is imaged with an infrared camera, and the temperature distribution is acquired. The heat dissipating means imitates the action of a heat sink or the like, and predicts heat generation in an actual use state in a set, that is, a state with a heat sink or the like. In order to accurately simulate a heat sink or the like, the shape and material of the cooling mechanism, the type of refrigerant, the flow rate, and the like can be set in advance using a known heat conduction simulator or the like. However, since there is a limit to simulation and it should be combined with experiments, the apparatus of this embodiment is in a complementary relationship with simulation.

  The result of thermal evaluation by this device is reflected in the specifications of the processor. For example, it can be preliminarily evaluated by the present apparatus such as how long the maximum load of the processor lasts before the temperature of the high temperature part exceeds the operation guarantee range.

  FIG. 1 shows an overall configuration of a thermal control system 100 according to the present embodiment. FIG. 2 shows the vicinity of the hollow glass plate 20 of FIG. 1 as viewed from above. The processor 18 is mounted on the printed circuit board 12. The processor 18 is a flip chip type and includes a package base 14 having a die 16 and a BGA (ball grid array) type external terminal.

  The back surface of the die 16 is exposed, and a flat hollow glass plate 20 is bonded to the surface by anodic bonding or the like. This bonding does not require an interface agent such as thermal grease, and has high thermal conductivity.

  The hollow glass plate 20 is connected to the trickle tube 22 at both ends, and a pump 26 is provided in the middle of the trickle tube 22. By driving the pump 26, the refrigerant contained in the trickle tube 22 and the hollow glass plate 20 circulates, and the back surface of the die 16 is cooled. The refrigerant may be liquid or gas, but a transparent one is selected so that the temperature detection by the infrared camera 24 is not affected. The arrows a and b in FIG. 2 indicate the traveling direction of the refrigerant, and the direction can be reversed by driving the pump 26. The hollow glass plate 20 has a flat surface wider than the processor 18 so that the coolant flows uniformly on the die 16. By providing such a cooling mechanism, the hollow part of the hollow glass plate 20, that is, the refrigerant covers the main part of the processor 18, and a heat dissipation state close to a heat sink can be simulated. This main part means more than half, most or all of the processor 18, a part with a large amount of heat generation, a central part, and the like.

  The infrared camera 24 in FIG. 1 images the die 16 through the hollow glass plate 20. The infrared camera 24 has a spatial resolution of, for example, about 100 × 100, and therefore has an effect that sensors having only that resolution are effectively two-dimensionally arranged. The time resolution of the infrared camera 24 is, for example, such that several tens of images can be captured per second.

  The heat control device 32 includes a heat detection unit 34 and an analysis unit 36. The heat detector 34 receives the inspection image from the infrared camera 24, acquires the temperature distribution of the die 16, and records it as image data in a memory (not shown). The analysis unit 36 reads the image data from the memory and performs necessary processing. An example of processing by the analysis unit 36 is as follows.

  Process 1 When the temperature distribution of the die 16 exceeds the threshold value (hereinafter, such a state is referred to as “high temperature abnormality”), the driving force of the pump 26 is increased. This prevents the processor 18 from undergoing thermal runaway or other malfunctions or being permanently destroyed during the thermal evaluation by this apparatus. The analysis unit 36 may specify and record the occurrence time of the high temperature abnormality from the time of the image frame. Even in the following processing, if the high temperature abnormality and the countermeasures are recorded along with the time, it is possible to provide useful information for developer thermal evaluation.

  Process 2 When a high temperature abnormality occurs, the operating state of the processor 18 is controlled. For example, an interrupt or the like is generated to reduce the operating frequency of the processor 18. Therefore, in the OS (operating system) that runs the evaluation processor 18, the operating frequency control handler is called from the interruption by the analysis unit 36.

  The operation of this apparatus having the above configuration is as follows. Prior to the thermal evaluation, the power supply of the pump 26 is turned on and the refrigerant starts to flow. Further, the power of the infrared camera 24 is turned on, and monitoring of the heat generation state is started.

  For example, the processor 18 starts operating in response to an instruction from the analysis unit 36, and the inspection image captured by the infrared camera 24 and the operation of the processor 18 are synchronized. If a high temperature abnormality occurs while the processor 18 is executing the evaluation program, the pump 26 or the processor 18 is controlled from the analysis unit 36, and the heat dissipation effect is enhanced or the heat generation itself is suppressed.

  As described above, the processor 18 can be operated normally and at the same time it can be analyzed what kind of program is executed to cause the high temperature abnormality. It is also possible to determine what countermeasures are effective for eliminating the high temperature abnormality. As a result, it is possible to determine a heat countermeasure to be requested from the set manufacturer when the processor 18 is put on the market, and to reflect the knowledge of thermal evaluation in the architecture design of the processor 18 itself.

  In order to record the heat generation state more accurately, it is meaningful to consider the temperature gradient due to the refrigerant flow. For example, when the refrigerant flows from the left to the right in the drawing as indicated by the arrow a in FIG. 2, the left side of the die 16 naturally has a lower temperature and the right side has a higher temperature. If the temperature distribution is recorded and evaluated in that state, the result is not necessarily correct. In order to eliminate this point, the analysis unit 36 may execute the following additional processing.

  1. The driving of the pump 26 is controlled, and the traveling direction of the refrigerant is appropriately reversed. Of the temperature distribution recorded by the heat detector 34, two data obtained before and after inversion are averaged and recorded as a temperature distribution. Averaging can substantially eliminate the temperature gradient. The inversion is preferably performed at regular intervals, but it should be considered that the period is extended to some extent so that the high-temperature refrigerant does not stay in the vicinity of the die 16.

  The average temperature distribution is obtained by performing the process of 2.1. Next, based on the difference between the temperature distribution and the temperature distribution when the refrigerant flows in one direction, the temperature gradient that appears when the refrigerant flows in that direction is calculated. Thereafter, the refrigerant flows only in that direction, and the obtained temperature distribution is multiplied by the temperature gradient to obtain a correct temperature distribution.

Embodiment 2. FIG.
This embodiment also relates to an apparatus for the purpose of evaluating the heat generation state of a semiconductor integrated circuit at the development stage, as in the first embodiment. Hereinafter, the description of parts common to the first embodiment will be omitted. The thermal control system 100 according to the present embodiment is configured in the same manner as in FIG. 1 and the operation thereof is the same as that in the first embodiment. However, the thermal control system 100 is implemented in the hollow glass plate 20 that functions as a cooling mechanism having a hollow portion. The structure is different from that of Form 1. That is, in the first embodiment, the refrigerant is circulated through the flat hollow glass plate 20 to cool the processor, and the imaging by the infrared camera 24 is performed through the refrigerant. On the other hand, in the present embodiment, the hollow portion of the hollow glass plate 20 is provided so that no refrigerant is interposed between the observation target die 16 and the infrared camera 24.

  FIG. 3 is a view of the hollow glass plate 20 used in the present embodiment as viewed from above. The coolant flow path 70 is predetermined from the die 16 so that the infrared camera 24 does not interfere with the imaging of the die 16. It is drilled with clearance. This predetermined clearance is determined by a heat conduction simulator so as to simulate a heat dissipation state close to a heat sink. Further, “with a predetermined clearance” means that the flow path 70 is secured so as not to interfere with imaging of a portion of the die 16 where the temperature distribution measurement is desired. Therefore, for example, when imaging only the central portion of the die 16, when the hollow glass plate 20 is viewed from above, the flow path 70 only needs to avoid the central portion to be imaged. It may overlap. The refrigerant flow path 70 is connected to the trickle tube 22, and the refrigerant circulates in the refrigerant flow path 70 by driving the pump 26.

  In the thermal control system 100 of the circuit configured as described above, no refrigerant exists between the die 16 of the processor to be measured and the infrared camera 24. Therefore, the refrigerant itself may be opaque, and the degree of freedom of selection becomes high. For example, water widely used as a refrigerant because of its ease of handling is not completely transparent in the infrared region, but can be used without any problem in this embodiment. In the present embodiment, since the refrigerant does not affect the temperature measurement by the infrared camera 24, correction due to the presence of the refrigerant is unnecessary, and the temperature distribution of the die 16 can be measured with high accuracy. . Furthermore, since the measured temperature distribution is purely that of the die 16, it is not necessary to correct the temperature gradient due to the flow direction of the refrigerant. However, since the cooling capacity in the upstream direction of the refrigerant is higher than that in the downstream direction, changing the refrigerant flow direction each time is meaningful in terms of controlling the heat generation state.

Embodiment 3 FIG.
The present embodiment also relates to a thermal control system, similar to the first and second embodiments. FIG. 4 is a diagram showing an overall configuration of the thermal control system 100 according to the present embodiment. In the figure, components similar to those in FIG. 1 are given the same reference numerals, and description thereof will be omitted as appropriate. The difference from FIG. 1 is that a heat spreader 62 made of silicon is used instead of the hollow glass plate 20 as a transparent cooling mechanism. Silicon is not transparent to visible light, but is a transparent material to infrared light and has a relatively high thermal conductivity. Therefore, efficient thermal cooling can be performed without disturbing the measurement of the planar temperature distribution on the die 16 by the infrared camera 24. The heat control system 100 according to the present embodiment further includes a jet cooling device 64 in place of the pump 26 for circulating the refrigerant.

  The jet cooling device 64 includes a plurality of cooling nozzles 66 a to 66 d collectively referred to as a cooling nozzle 66. The jet cooling device 64 is known as a cooling method capable of obtaining a large local thermal voltage efficiency, and cools by jetting a refrigerant from a cooling nozzle and blowing it onto a heating element. The refrigerant injected from the cooling nozzle spreads around the jet axis, and a high cooling effect is obtained in the vicinity of the center. In the present embodiment, the jet cooling device 64 includes a plurality of cooling nozzles 66 a to 66 d arranged so as to cover the entire die 16. The number of cooling nozzles is determined by the cooling capacity of each cooling nozzle determined by the area of the die 16 or the nozzle diameter.

The planar temperature distribution on the die 16 is acquired by the infrared camera 24, and the analysis unit 36 analyzes the captured image and specifies the position of the high-temperature portion that generates heat locally. The analysis unit 36 controls the jet cooling device 64 to increase the driving ability of the cooling nozzle 66 corresponding to the specified high temperature portion among the plurality of cooling nozzles 66.
Further, the cooling nozzle 66 may be capable of controlling the injection direction of the refrigerant by an actuator. In this case, data corresponding to the position coordinates of the high-temperature location may be input from the analysis unit 36 to the jet cooling device 64, and cooling may be performed intensively by directing the injection direction of the cooling nozzle 66 toward the high-temperature location by the actuator.

  As described above, in the present embodiment, by using the heat spreader 62 made of silicon, the die 16 can be cooled via the spreader. The die 16 is cooled by using a jet cooling device 64, the planar temperature distribution on the die 16 is acquired by the infrared camera 24, and the hot spot is intensively cooled by the jet cooling device 64, thereby the die 16. The above heat generation state can be leveled.

  In the present embodiment, in accordance with the heat generation state of the die 16, the processor 18 may be controlled together with the operation of the jet cooling device 64 to suppress the heat generation itself, and more effective temperature distribution leveling is performed. Can do.

  For cooling the heat spreader 62 in the present embodiment, other means that does not interfere with the imaging of the die 16 by the infrared camera 24 may be used instead of the cooling by the jet cooling device 64. For example, the edge of the heat spreader may be cooled by bringing it into contact with a Peltier element or a water cooling pipe, or an air cooling fan may be used.

  Furthermore, since a normal processor is formed on a silicon substrate, it is the same material as a silicon heat spreader. Therefore, the silicon substrate on which the processor is formed can be designed by being stretched so as to have the area, thickness, etc. required as a heat spreader, and the stretched portion can be used as a heat spreader. In other words, a silicon substrate having characteristics such as the area and thickness of a silicon substrate necessary as a heat spreader may be prepared, and logic such as a gate may be formed thereon. In this case, there is no heat loss at the bonding surface between the processor and the heat spreader, and more efficient cooling can be performed. In this case, since the temperature distribution of the die 16 is directly measured by the infrared camera 24, it is preferable from the viewpoint of measurement accuracy such as ease of correction.

Embodiment 4 FIG.
The first to third embodiments are apparatuses intended for evaluation at the development stage. The present embodiment relates to an apparatus that is actually mounted in a set and performs thermal control under actual use conditions. Since the cooling mechanism for circulating the refrigerant is also adopted in this embodiment, it is not necessary to attach a relatively large structure such as a heat sink having unevenness to the semiconductor circuit device, and flexibility is increased in terms of the set mechanism and structure design.

  FIG. 5 shows the overall configuration of the thermal control system 100 according to the present embodiment. In the figure, components similar to those in FIG. 1 are given the same reference numerals, and description thereof will be omitted as appropriate. The difference from FIG. 1 is that the output of the infrared camera 24 is input to the processor 18 as it is, and the pump 26 is controlled by the processor 18. In short, the knowledge obtained by the thermal control device 32 of the first embodiment is mounted on the processor 18 as it is. Further, the cooling mechanism having the hollow glass plate 20 and the pump 26 in the present embodiment may be another cooling mechanism as described in the second or third embodiment.

  FIG. 6 shows the internal configuration of the processor 18. The processor 18 includes a main processor 40 and four sub-processors A to D each having the same configuration. The main processor 40 includes a heat detection unit 34, a cooling control unit 42, and an operation control unit 44. The main processor 40 performs other general-purpose processing, but is not shown here. The planar temperature distribution of the die 16 imaged by the infrared camera 24 is input to the heat detection unit 34, and a high temperature location where a high temperature abnormality occurs on the die 16 is specified. As a result of monitoring by the heat detection unit 34, when a high temperature abnormality occurs, either or both of the cooling control unit 42 and the operation control unit 44 improve heat dissipation efficiency or suppress heat generation. The cooling control unit 42 increases the driving force of the pump 26 when the temperature is abnormal. The operation control unit 44 includes a process allocator 46 and a frequency manager 48, and lowers the temperature of the high temperature part.

  When a high temperature abnormality is found in any of the sub processors A to D, the process allocator 46 relocates the process to be passed to the sub processor to another sub processor. Usually, processes that can be processed in parallel are sequentially input to sub-processors that can be used by LRU (Least Recently Used) or other methods. However, if a high temperature abnormality occurs, the process allocator 46 can avoid the introduction of a new process by always setting the flag of the sub processor including the high temperature part to “in use”. If the high temperature abnormality is resolved, the flag is cleared.

  The frequency manager 48 reduces the operating frequency if a high temperature abnormality occurs. If the operating frequency is common to the main processor 40 and the sub processors A to D, the entire operating frequency may be lowered uniformly. On the other hand, if the architecture is such that the operating frequency can be changed for each block of the main processor 40 and the sub processors A to D, it is naturally sufficient to reduce the operating frequency of the block including the high temperature portion.

  To what extent the functions of the process allocator 46, the frequency manager 48, and the cooling control unit 42 are used may be determined by experiments, and the devices of the first to third embodiments may be used. As described above, in this embodiment, when a high temperature abnormality is detected by the heat detection unit 34, the load of the sub processors A to D in which the high temperature abnormality has occurred is controlled by the process allocator 46 and the frequency manager 48 in accordance with the control of the pump 26. By controlling the processing speed, it is possible to suppress the heat generation at the high temperature part and level the planar temperature distribution of the die 16.

Embodiment 5 FIG.
The present embodiment relates to a device that further enhances the heat dissipation effect by the hollow glass plate 20. Although this embodiment can be combined with Embodiments 1 and 2, it is not necessary to limit to them, and it can be widely used as a heat control device. When the infrared camera 24 is not used in the present embodiment, the hollow glass plate 20 does not need to be transparent, and thus may be formed of a metal or other material having excellent thermal conductivity such as aluminum or copper.

  FIG. 7A is an enlarged view of the vicinity of the die 16 according to the present embodiment, and FIG. 7B is a view as seen from above. The hollow glass plate 20 is indicated by a dotted line, and the die 16 is indicated by oblique lines. The hollow glass plate 20 is provided with an opening 58 in a region facing the exposed surface of the die 16 and is closely bonded to the peripheral portion of the die 16 and the portion 60 having a width w by anodic bonding or the like. In this case, “tightly bonded” means that the refrigerant is fixed so as not to leak out from the hollow portion. With this structure, since the refrigerant directly touches the back surface of the die 16, the heat dissipation effect is high.

  FIG. 8 is a modification, and shows a part of a portion 60 where the die 16 and the hollow glass plate 20 are joined. As shown in the figure, the opening of the hollow glass plate 20 is formed to exactly match the outer shape of the die 16, and the inner surface of the hollow glass plate 20 and the upper surface of the die 16 are on the same plane. If it is this structure, the flow of a refrigerant | coolant is smoother and can anticipate further higher heat dissipation effect.

  The present invention has been described based on the embodiments. Those skilled in the art will understand that these embodiments are exemplifications, and that various modifications can be made to combinations of the respective constituent elements and processing processes, and such modifications are also within the scope of the present invention. By the way. Here are some examples.

  Although the infrared camera 24 is used in the embodiment, the present invention is not limited to this, and another imaging sensor may be used. For example, an imaging unit of a digital camera using a general CCD (charge coupled device) can also function. In that case, it is usually only necessary to remove the infrared filter provided in the imaging unit. This configuration is advantageous in terms of both unit price and size.

  In the embodiment, an example in which the back surface of the die 16 is exposed has been described. However, this is not necessary, and a heat spreader may be placed on the back surface of the die 16.

  In the embodiment, the cooling means for the refrigerant is not touched, but it may be provided as a matter of course. The cooling means is intended to increase the surface area of the trickle tube 22 at that portion and to radiate heat with a fan or the like. The analysis unit 36 in FIG. 1 or the cooling control unit 42 in FIG. 4 may control this cooling means.

  When the operating frequency of the processor 18 is reduced, it may be controlled stepwise according to the heat generation state. For example, a plurality of threshold values for determining a high temperature abnormality may be provided, and the operating frequency may be gradually decreased. The control of the driving force of the pump 26 is the same.

It is a figure which shows the whole structure of the thermal control system which concerns on Embodiment 1. FIG. It is a figure which shows the state which looked at a part of FIG. 1 from the top. It is a figure which shows the state which looked at a part of thermal control system which concerns on Embodiment 2 from the top. It is a figure which shows the whole structure of the thermal control system which concerns on Embodiment 3. FIG. It is a figure which shows the whole structure of the thermal control system which concerns on Embodiment 4. FIG. It is a figure which shows the internal structure of the processor of FIG. FIG. 7A and FIG. 7B are diagrams showing a partial configuration of the thermal control system according to the fifth embodiment. It is a figure which shows the structure of the modification of FIG.

Explanation of symbols

  16 die, 18 processor, 20 hollow glass plate, 24 infrared camera, 26 pump, 32 heat control device, 34 heat detection unit, 36 analysis unit, 42 cooling control unit, 44 operation control unit, 58 opening, 62 heat spreader, 64 jet Cooling device, 66 nozzles, 70 flow paths.

Claims (18)

A heat detection unit for acquiring a heat generation state of the semiconductor integrated circuit from an inspection image obtained by imaging the semiconductor integrated circuit with an imaging sensor;
A cooling control unit for controlling a means for cooling the semiconductor integrated circuit according to the acquired heat generation state;
A heat generation control device for a circuit, comprising:   2. The apparatus according to claim 1, wherein the heat detection unit acquires a temperature distribution of the semiconductor integrated circuit from the inspection image, and a temperature exceeds a predetermined threshold at any point of the semiconductor integrated circuit. In this case, the cooling control unit increases the cooling capacity of the cooling means. A heat detection unit for acquiring a heat generation state of the semiconductor integrated circuit from an inspection image obtained by imaging the semiconductor integrated circuit with an imaging sensor;
An operation control unit for controlling the operation state of the semiconductor integrated circuit according to the acquired heat generation state;
A heat generation control device for a circuit, comprising:   The apparatus according to claim 3, wherein the heat detection unit acquires a temperature distribution of the semiconductor integrated circuit from the inspection image, and a temperature exceeds a predetermined threshold at any point of the semiconductor integrated circuit. The operation control unit reduces a processing load per unit time at a location where the temperature exceeds a threshold value. Obtaining a heat generation state of the semiconductor integrated circuit with a two-dimensionally dense resolution;
Performing control for changing the heat generation state of the semiconductor integrated circuit according to the acquired heat generation state;
A circuit heat generation control method comprising: A transparent cooling mechanism that is fixed in close contact with the semiconductor integrated circuit;
An imaging sensor that images the semiconductor integrated circuit through the cooling mechanism;
A heat detection unit for acquiring a heat generation state of the semiconductor integrated circuit from an inspection image captured by the sensor;
An analysis unit for analyzing the acquired heat generation state;
A heat generation control device for a circuit, comprising: The cooling mechanism is a silicon heat spreader,
The circuit heat generation control device according to claim 6, further comprising means for cooling the heat spreader. A heat spreader formed by extending the silicon substrate in a direction away from the heat generating portion of the semiconductor integrated circuit formed on the silicon substrate;
A cooling device for cooling the heat spreader;
An imaging sensor for imaging the semiconductor integrated circuit;
A heat detection unit for acquiring a heat generation state of the semiconductor integrated circuit from an inspection image captured by the sensor;
An analysis unit for analyzing the acquired heat generation state;
A heat generation control device for a circuit, comprising: The cooling mechanism has a hollow portion;
The circuit heat generation control device according to claim 6, further comprising a drive mechanism for circulating a refrigerant in the hollow portion.   10. The apparatus according to claim 9, wherein the hollow portion is drilled so as to cover a main portion of the semiconductor integrated circuit, and imaging of the semiconductor integrated circuit by the sensor is performed through the hollow portion. A circuit heat generation control device.   10. The apparatus according to claim 9, wherein the hollow portion is formed with a predetermined clearance from the semiconductor integrated circuit so that imaging of the semiconductor integrated circuit by the sensor does not pass through the hollow portion. A circuit heat generation control device.   12. The circuit heat generation control apparatus according to claim 9, wherein the driving mechanism appropriately changes a flow direction of the refrigerant.   13. The circuit heat generation control apparatus according to claim 12, wherein the analysis unit integrates and analyzes heat generation states detected before and after the refrigerant flow direction changes.   12. The circuit heat generation control device according to claim 9, wherein the analysis unit analyzes a heat generation state in consideration of a temperature gradient depending on a flow direction of the refrigerant. A cooling mechanism having a hollow portion and cooling the semiconductor integrated circuit;
A drive mechanism for circulating a refrigerant in the hollow portion;
An opening communicating with the hollow portion is formed at a predetermined portion of the cooling mechanism, and at least an edge of the opening is closely fixed to a corresponding portion of the semiconductor integrated circuit, and the coolant passes through the opening. A circuit heat generation control device characterized by having a structure in which at least a part of a semiconductor integrated circuit is directly touched. A semiconductor integrated circuit;
An imaging sensor for imaging a semiconductor integrated circuit;
A heat detector for acquiring a heat generation state of the semiconductor integrated circuit from an inspection image obtained by imaging the semiconductor integrated circuit with a sensor;
A cooling control unit for controlling a means for cooling the semiconductor integrated circuit according to the acquired heat generation state;
A circuit heat generation control system comprising: A semiconductor integrated circuit;
An imaging sensor for imaging a semiconductor integrated circuit;
A heat detector for acquiring a heat generation state of the semiconductor integrated circuit from an inspection image obtained by imaging the semiconductor integrated circuit with a sensor;
An operation control unit for controlling the operation state of the semiconductor integrated circuit according to the acquired heat generation state;
A circuit heat generation control system comprising: A semiconductor integrated circuit;
A cooling mechanism having a hollow portion and cooling the semiconductor integrated circuit;
A drive mechanism for circulating a refrigerant in the hollow portion;
An opening communicating with the hollow portion is formed at a predetermined portion of the cooling mechanism, and at least an edge of the opening is closely fixed to a corresponding portion of the semiconductor integrated circuit, and the coolant passes through the opening. A circuit heat generation control system characterized in that a structure directly touching at least part of a semiconductor integrated circuit is provided.

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