JP2005322781A5 - - Google Patents

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Publication number
JP2005322781A5
JP2005322781A5 JP2004139765A JP2004139765A JP2005322781A5 JP 2005322781 A5 JP2005322781 A5 JP 2005322781A5 JP 2004139765 A JP2004139765 A JP 2004139765A JP 2004139765 A JP2004139765 A JP 2004139765A JP 2005322781 A5 JP2005322781 A5 JP 2005322781A5
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JP
Japan
Prior art keywords
current sensing
sensing cell
chip
current
coating
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Application number
JP2004139765A
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Japanese (ja)
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JP2005322781A (en
JP4829480B2 (en
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Priority to JP2004139765A priority Critical patent/JP4829480B2/en
Priority claimed from JP2004139765A external-priority patent/JP4829480B2/en
Publication of JP2005322781A publication Critical patent/JP2005322781A/en
Publication of JP2005322781A5 publication Critical patent/JP2005322781A5/ja
Application granted granted Critical
Publication of JP4829480B2 publication Critical patent/JP4829480B2/en
Expired - Fee Related legal-status Critical Current
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Claims (2)

電流センス用セルを有する半導体チップ、前記電流センス用セルのセンス電流が所定値を超えると前記半導体チップに流れる電流を制限しチップを保護する制御回路とを備えた半導体装置において、前記半導体チップの中央付近と外周付近とに電流センス用セルを複数設置し、そのセンス電流の平均値が前記所定値を超えると前記制御回路が前記保護を行うようにしたことを特徴とする半導体装置。   A semiconductor device comprising: a semiconductor chip having a current sensing cell; and a control circuit that protects the chip by limiting a current flowing through the semiconductor chip when a sense current of the current sensing cell exceeds a predetermined value. 2. A semiconductor device according to claim 1, wherein a plurality of current sensing cells are provided near the center and near the outer periphery, and the control circuit performs the protection when an average value of the sense current exceeds the predetermined value. チップ表面を保護膜でコーティングするコーティング領域とコーティングしない非コーティング領域が存在し、且つ電流センス用セルを有する半導体チップにおいて、前記電流センス用セル表面上の第１のコーティング領域と第１の非コーティング領域との面積比と、前記電流センス用セル以外のセル表面上の第２のコーティング領域と第２の非コーティング領域との面積比とを等しくしたことを特徴とする半導体装置。 In a semiconductor chip having a coating region where the chip surface is coated with a protective film and a non-coating region where the chip surface is not coated and having a current sensing cell, the first coating region and the first non-coating on the current sensing cell surface A semiconductor device characterized in that an area ratio between the first and second non-coating regions on the cell surface other than the current sensing cell is made equal.
JP2004139765A 2004-05-10 2004-05-10 Semiconductor device Expired - Fee Related JP4829480B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004139765A JP4829480B2 (en) 2004-05-10 2004-05-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004139765A JP4829480B2 (en) 2004-05-10 2004-05-10 Semiconductor device

Publications (3)

Publication Number Publication Date
JP2005322781A JP2005322781A (en) 2005-11-17
JP2005322781A5 true JP2005322781A5 (en) 2006-10-26
JP4829480B2 JP4829480B2 (en) 2011-12-07

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ID=35469827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004139765A Expired - Fee Related JP4829480B2 (en) 2004-05-10 2004-05-10 Semiconductor device

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JP (1) JP4829480B2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5410649B2 (en) * 2006-04-05 2014-02-05 株式会社豊田中央研究所 MOS type semiconductor device
DE112009004595B4 (en) 2009-03-24 2015-04-09 Toyota Jidosha Kabushiki Kaisha Semiconductor device
JP5372257B2 (en) 2010-09-03 2013-12-18 三菱電機株式会社 Semiconductor device
JP5694119B2 (en) * 2010-11-25 2015-04-01 三菱電機株式会社 Silicon carbide semiconductor device
JP5649478B2 (en) * 2011-02-16 2015-01-07 三菱電機株式会社 Semiconductor device and test method thereof
JP5659897B2 (en) * 2011-03-22 2015-01-28 トヨタ自動車株式会社 System comprising semiconductor device and control means, and method for controlling current flowing through semiconductor device
JP5706251B2 (en) 2011-06-30 2015-04-22 ルネサスエレクトロニクス株式会社 Semiconductor device
DE102012202180A1 (en) * 2012-02-14 2013-08-14 Robert Bosch Gmbh Semiconductor arrangement for a current sensor in a power semiconductor
JP6896646B2 (en) 2015-12-18 2021-06-30 ローム株式会社 Semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3204227B2 (en) * 1985-11-29 2001-09-04 株式会社デンソー Semiconductor device
JPH045828A (en) * 1990-04-23 1992-01-09 Nec Corp Semiconductor device
JP3338185B2 (en) * 1994-08-02 2002-10-28 株式会社東芝 Semiconductor device
EP0892435A1 (en) * 1997-07-14 1999-01-20 STMicroelectronics S.r.l. Integrated semiconductor transistor with current sensing
GB9818044D0 (en) * 1998-08-20 1998-10-14 Koninkl Philips Electronics Nv Power transistor device
JP5014534B2 (en) * 2001-04-13 2012-08-29 オンセミコンダクター・トレーディング・リミテッド MOSFET

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