JP2005315503A - Semiconductor device plant - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device plant comprising a clean room having a floor surface effectively utilized, capable of flexibly coping with a change in the arrangement of semiconductor devices, and enabling a space with uniform temperature distribution to be formed with less power consumption. <P>SOLUTION: Hot air in the clean room 2 is led from an opening part 17 formed in a first ceiling 4 into the space held by the first ceiling 4 and a second ceiling 14. Then, the hot air is led into the space at the rear of the ceilings through a cooling mechanism 10. In this case, the hot air is purified and cooled to a proper temperature. After that, the air purified and cooled to a proper temperature is blown into the clean room by a fan filter unit 5 installed in the first ceiling 4 and the second ceiling 14. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a semiconductor device factory, and more particularly to a semiconductor device factory having a clean room.

  In a conventional semiconductor device factory, a clean room for installing a semiconductor device manufacturing apparatus is provided. A utility room with incidental facilities is provided below the clean room. Above the clean room, there is a space behind the ceiling through the ceiling. A fan filter unit is attached to the ceiling, and the air in the space behind the ceiling is purified via the fan filter unit and supplied to the clean room.

The clean room and the utility room are partitioned by a floor having a mesh structure, and the air in the clean room once flows into the utility room. Since there is a device having a heat source in the clean room, the air flowing to the utility room is cooled by the cooling mechanism and then returned to the space behind the ceiling via a return chamber provided along the side wall of the clean room. Return.
JP 2002-333180 A JP-A-8-247512 JP 2001-153414 A

  In the conventional semiconductor device factory as described above, since the return chamber has an essential structure, there is a problem that the floor space of the clean room cannot be effectively used.

  In addition, when the number of fan filter units is reduced, the air flow weakens, so hot air stays above the semiconductor device manufacturing apparatus having a heat source, and the temperature distribution in the clean room becomes non-uniform. Therefore, there is a problem that a mechanical error may occur in the semiconductor device manufacturing apparatus.

  As a method for making the temperature distribution in the clean room uniform, as shown in Japanese Patent Application Laid-Open No. 2002-333180, a method of installing a cooling mechanism and a return chamber in accordance with a semiconductor device manufacturing apparatus having a heat source, and As disclosed in Japanese Patent Laid-Open No. 8-247512, a method of providing an air intake hole in a fan filter unit has been proposed. Each of the methods has a problem that the degree of freedom of arrangement of the semiconductor device manufacturing apparatus is low and it cannot easily cope with the movement of the semiconductor device manufacturing apparatus having a heat source.

  Japanese Patent Application Laid-Open No. 2001-153414 proposes a method in which an air intake mechanism is provided in a ceiling portion of a clean room, whereby air is sucked and cooled by the air intake mechanism and guided to a blowout portion of the fan filter unit. In this method, by incorporating an intake mechanism and a cooling mechanism in the ceiling panel unit, it is possible to flexibly cope with the expansion of the clean room. However, since the cooling mechanism is provided with a cooling water pipe or the like, the degree of freedom in designing the intake mechanism and the cooling mechanism is low. Furthermore, since the inlet and the outlet are directly connected, there is a problem that it is difficult to improve the temperature uniformity of the entire clean room.

  The object of the present invention has been made in view of the above-mentioned problems, and the floor surface can be effectively utilized, can flexibly cope with changes in the arrangement of semiconductor devices, and is uniform with low power consumption. To provide a semiconductor device factory having a clean room capable of maintaining a proper temperature distribution.

  The semiconductor device manufacturing factory of the present invention includes a clean room in which a semiconductor device manufacturing apparatus is installed, and a utility room in which ancillary facilities of the semiconductor device manufacturing apparatus are installed and provided under the clean room through a floor. . The semiconductor device factory has an opening, a first ceiling facing the clean room, a second ceiling provided above the first ceiling, and a space behind the ceiling located above the second ceiling And. The semiconductor manufacturing plant is provided on the second ceiling, and cools the air in the clean room in the middle of guiding it to the space behind the ceiling through the opening and the space sandwiched between the first ceiling and the second ceiling. A mechanism has a conduit that communicates the clean room with the space behind the ceiling, and a blowout mechanism that blows out the cooled air in the space behind the ceiling into the clean room via the conduit.

  According to the above structure, there is no need to provide a return chamber for flowing air from the utility room to the clean room as in a conventional semiconductor device manufacturing factory, so the floor area of the clean room is increased by the amount of the return chamber. Can do. In addition, the room temperature can be accurately controlled over the entire clean room. In addition, it is possible to easily cope with new installation and transfer of a semiconductor device manufacturing apparatus having a heat source.

  Moreover, it is desirable that the opening is provided above a specific device having a heat generating portion in the semiconductor device manufacturing apparatus. According to this structure, the hot air generated by the specific device having the heat generating portion can be efficiently guided to the cooling mechanism.

  In addition, the floor has a plurality of through holes that allow air to flow between the clean room and the utility room in an area where air flows from the semiconductor device manufacturing apparatus toward the floor and an area located below the opening. It is desirable to have holes. According to this structure, since the plurality of through holes are provided only in the floor portion where it is desirable that the flow of hot air is generated between the clean room and the utility room, the flow of hot air can be efficiently generated. .

  The semiconductor device manufacturing factory of the present invention includes a clean room in which a semiconductor device manufacturing apparatus is installed, and a utility room in which ancillary facilities of the semiconductor device manufacturing apparatus are installed and provided under the clean room through a floor. . Further, the semiconductor device factory includes a first ceiling facing the clean room, a second ceiling provided above the first ceiling, and a space behind the ceiling located above the second ceiling. Yes. Furthermore, the semiconductor device factory includes an exhaust pipe that is connected to the semiconductor device manufacturing apparatus and a space sandwiched between the first ceiling and the second ceiling and guides the hot air discharged by the semiconductor device device to the space behind the ceiling. ing. Further, the semiconductor device factory is provided on the second ceiling, and the hot air discharged from the semiconductor device device flowing into the space between the first ceiling and the second ceiling from the exhaust pipe is guided to the space behind the ceiling. It has a cooling mechanism that cools in In addition, the semiconductor device factory has a pipe line that allows the clean room and the space behind the ceiling to communicate with each other, and includes a blowing mechanism that blows out the cooled air in the space behind the ceiling through the pipe line into the clean room. Even with the above structure, unlike the conventional semiconductor device manufacturing factory, it is not necessary to provide a return chamber for flowing air from the utility room to the clean room. Therefore, the floor area of the clean room can be increased by the amount of the return chamber. it can. Further, according to this structure, hot air generated by the semiconductor device manufacturing apparatus can be guided to the cooling mechanism without being convected in the clean room.

  The semiconductor device manufacturing factory has an outside air suction mechanism that sucks in outside air, an outside air introduction pipe that guides outside air to the vicinity of the blowing mechanism, and a control mechanism that blows outside air from the outside air introduction pipe to the vicinity of the blowing mechanism and controls the amount of blowing outside air. It is desirable to have. In this case, it is desirable that the control mechanism controls the blowout amount according to the temperature of the air in the clean room. According to this structure, the air cooled according to the temperature of the clean room air can be blown into the clean room.

  Hereinafter, the semiconductor device structure of the first embodiment will be described with reference to the drawings.

Embodiment 1 FIG.
First, the semiconductor device factory according to the first embodiment will be described with reference to FIG.

  The semiconductor device factory 1 of this embodiment has a clean room 2 and a utility room 3 provided on the lower side of the clean room 2 via the floor 6. The clean room 2 is provided with semiconductor device manufacturing apparatuses 8a and 8b. The utility room 3 is provided with incidental facilities 9a and 9b of the semiconductor device manufacturing apparatuses 8a and 8b. The incidental facilities 9a and 9b and the semiconductor device manufacturing apparatuses 8a and 8b are connected by pipes 25a and 25b penetrating the floor 6, respectively. The semiconductor device manufacturing apparatus 8a is an apparatus that releases the largest amount of hot air in the clean room 2, and the semiconductor device manufacturing apparatus 8b is an apparatus that generates a relatively small amount of hot air. The clean room 2 and the utility room 3 are partitioned by a floor 6 having a mesh structure. The network structure functions as an example of a plurality of through holes provided in the floor of the present invention.

  An outside air suction mechanism 11 is installed on the roof of the semiconductor device factory 1. The outside air intake mechanism 11 takes in outside air, adjusts the temperature and humidity of the outside air, and removes fine particles from the outside air. Thereafter, the outside air suction mechanism 11 blows outside air into the space 22 behind the ceiling via the outside air introduction pipe 12. The air blown out from the outside air introduction pipe 12 into the space 22 behind the ceiling usually has a temperature lower than room temperature. Therefore, the air warmed in the clean room 2 and taken into the space 22 behind the ceiling via the opening 17 and the cooling mechanism 10 and the space 22 behind the ceiling via the outside air intake mechanism 11 and the outside air introduction pipe 12. When the air taken in is mixed in the utility room 3, the temperature of the air in the space 22 behind the ceiling becomes an appropriate temperature.

  Above the clean room 2, a first ceiling 4 facing the clean room 2 and a second ceiling 14 extending in parallel to the first ceiling 4 above the first ceiling 4 are provided. A space 22 behind the ceiling is provided above the second ceiling 14. The first ceiling 4 is provided with an opening 17 for guiding the air in the clean room 2 to a space sandwiched between the first ceiling 4 and the second ceiling 14. The second ceiling 14 guides the air in the space sandwiched between the first ceiling 4 and the second ceiling 14 into the space 22 behind the ceiling, cools the air passing through the interior thereof, A cooling mechanism 10 that lowers the temperature is provided. A fan filter unit 5 serving as a blowing mechanism for blowing out the air cooled in the space 22 behind the ceiling into the clean room 2 is attached to the space sandwiched between the first ceiling 4 and the second ceiling 14. . The fan filter unit 5 has a conduit that allows the space 22 behind the ceiling to communicate with the clean room 2. The air in the space 22 behind the ceiling is cleaned by the fan filter unit 5 and then supplied to the clean room 2 via a pipe line.

  In the semiconductor device factory 1 of the present embodiment, the air in the clean room 2 is sucked into the space 22 on the back of the ceiling through the opening 17 provided in the ceiling 4. Therefore, there is no need to provide a return chamber for connecting the utility room and the space behind the ceiling, which is provided in a conventional semiconductor device factory. As a result, according to the semiconductor device factory of the present embodiment, the floor area of the clean room 2 can be effectively used as compared with the conventional semiconductor device factory.

  On the other hand, in the structure of the semiconductor device factory of the present embodiment, there is no air flow that blows down uniformly from the top to the bottom in the clean room 2, so the cleanliness of the air in the clean room 2 may be reduced. However, even in a conventional semiconductor device factory that discharges air from the clean room to the utility room, an air flow that blows down uniformly from the top to the bottom is generated in the clean room 2 unless the fan filter unit is installed on almost the entire surface of the ceiling. I can't expect that. Therefore, in a semiconductor device factory where it is only necessary to obtain a locally clean space, the air in the clean room is between the structure of the semiconductor device factory of the present embodiment and the structure of the conventional semiconductor device factory. There is no great difference in cleanliness.

  Therefore, according to the semiconductor device factory 1 of the present embodiment, an effect of improving the temperature uniformity in the clean room 2 can be obtained in the clean room 2 that only needs to form a locally clean space.

  Among the semiconductor device manufacturing apparatuses, as in the semiconductor device manufacturing apparatus 8a, it is necessary to maintain high temperature uniformity in the clean room in order to maintain the mechanical accuracy, and the stability of the temperature in the clean room. There are things that need to be kept high.

  In a conventional clean room of a semiconductor device factory, hot air stays above the semiconductor manufacturing apparatus 8a that generates a large amount of hot air, and the temperature of the air tends to rise locally. If the structure does not flow air from the clean room 2 to the utility room 3, the above-described tendency becomes even stronger.

  Therefore, in the semiconductor device factory 1 according to the present embodiment, the first ceiling 4 having the opening 17 and the second ceiling 14 having the cooling mechanism 10 provided above the first ceiling 4. A two-layer ceiling is provided.

  An opening 17 is provided immediately above the semiconductor device manufacturing apparatus 8a having a heat generating portion. Therefore, mainly heated air is selectively taken into the space 22 behind the ceiling, so that the degree of air temperature uniformity in the clean room 2 can be improved.

  The cooling mechanism 10 is a mechanism that cools air passing therethrough using cold water or the like. Since this cooling mechanism 10 is accompanied by piping etc. which guide cold water, the freedom degree of the arrangement is low. Therefore, by adopting the double ceiling structure of the semiconductor device factory 1 of the present embodiment and providing the opening 17 above the semiconductor device manufacturing apparatus 8a having the heat generating portion, high temperature air is selectively opened. It can be led from the portion 17 to the space 22 behind the ceiling and cooled.

  Furthermore, by forming the first ceiling 4 with a panel member or the like independent from the wall structure, it is possible to easily cope with new installation or transfer of a semiconductor device manufacturing apparatus.

  In addition, the hot air released from the semiconductor device manufacturing apparatus is concentrated in the exhaust duct through the exhaust pipe extending from the clean room of the conventional semiconductor device factory to the utility room, but the structure of the semiconductor device factory of the present embodiment. Accordingly, the exhaust pipe 15 that communicates the semiconductor device manufacturing apparatus 8c and the space sandwiched between the first ceiling 4 and the second ceiling 14 is provided. Accordingly, since hot air is discharged from the semiconductor device manufacturing apparatus 8c to the first space 22 behind the ceiling via the exhaust pipe 15, an exhaust duct is not necessary. As a result, the degree of freedom of arrangement of the utility room 3 increases.

  Further, according to the structure of the semiconductor device factory of the present embodiment, the hot air in the clean room 2 is selectively guided to the cooling mechanism 10 and then mixed with other air in the ceiling space 22. Is done. Therefore, the temperature of the air in the clean room 2 can be maintained more uniformly.

  Further, a structure in which a cooling mechanism such as a dry coil is installed in the space behind the ceiling is also disclosed in the above-mentioned Japanese Patent Application Laid-Open No. 2002-333180, but the semiconductor disclosed in Japanese Patent Application Laid-Open No. 2002-333180. In the structure of the device manufacturing apparatus, an atmosphere with hot air can not be selectively guided to the cooling mechanism.

  On the other hand, if a structure having a double ceiling is employed as in the semiconductor device factory of the present embodiment, the cooling mechanism 10 whose position is fixed via the opening 17 is used to generate hot air generated from a specific place. It is possible to lead to Further, even when the heat source moves, hot air can be guided to the cooling mechanism 10 only by changing the position of the opening 17, so that it is possible to flexibly cope with the change of the position of the heat source.

  FIG. 2 is a diagram for explaining a modification of the semiconductor device factory of the present embodiment. In the semiconductor device factory of this modification, air outside the semiconductor device factory is guided from the outside air suction mechanism 11 to the vicinity of the fan filter unit 5 by the outside air introduction pipe 12. The air blown out from the outside air introduction pipe 12 to the space 22 behind the ceiling is controlled by the opening amount of the valve 13 as the control mechanism of the present invention. As described above, when the structure having the outside air introduction pipe 12 is adopted, the opening amount of the valve 13 is adjusted according to the temperature in the vicinity of the fan filter unit 5, so that the outside air enters the space 22 behind the ceiling. The amount of introduction of can be changed. As a result, the temperature of the air in the clean room 2 can be controlled more accurately.

Embodiment 2. FIG.
Next, the semiconductor device factory according to the second embodiment will be described with reference to FIG. The structure of the semiconductor device factory of the present embodiment is almost the same as the structure of the semiconductor device factory shown in FIG. 2 of the first embodiment. Therefore, in the description of the structure of the semiconductor device factory according to the present embodiment, only portions different from the description of the structure of the semiconductor device factory according to the first embodiment will be described.

  In the semiconductor device factory of the first embodiment shown in FIGS. 1 and 2, there is a possibility that the temperature distribution in the clean room 2 becomes non-uniform due to the influence of the heat source in the utility room 3.

  Therefore, in the semiconductor device factory 1 of the present embodiment, the floor 6a occupying most of the floor is basically composed of a member that does not allow air to pass. Therefore, the rise of hot air generated in the utility room 3 is prevented. On the other hand, the floor 6b is a member having a through-hole through which air passes, for example, a member having a mesh structure, and is provided below the semiconductor device manufacturing apparatus 35 having a mechanism for blowing air toward the floor portion of the semiconductor device manufacturing apparatus. The region and the passage 30 are provided in a region that hardly affects the semiconductor device manufacturing apparatus even if an air flow from the bottom to the top is generated.

  By adopting the structure as described above, the air blown from the semiconductor device manufacturing apparatus 35 flows into the utility room 3 without colliding with the floor and being scattered. Further, the floor 6b through which the air passes is disposed in an area where the cleanliness of the air may be lowered by the air flow from the bottom to the top such as the passage 30, and the opening 17 and the cooling mechanism 10 are provided above the floor 6b. Therefore, hot air generated in the utility room 3 can be flowed into the space 22 on the back of the ceiling while minimizing fluctuations in the temperature distribution in the clean room 2.

  It should be understood that the embodiment disclosed this time is illustrative in all respects and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

1 is a diagram illustrating a semiconductor device factory according to a first embodiment. It is a figure which shows the semiconductor device factory of the modification of Embodiment 1. FIG. FIG. 6 is a diagram illustrating a semiconductor device factory according to a second embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Semiconductor device factory, 2 Clean room, 3 Utility room, 1st ceiling, 5 Fan filter unit, 6, 6a, 6b Floor, 8a, 8b, 8c Semiconductor device manufacturing apparatus, 9a, 9b Auxiliary equipment, 10 Cooling mechanism, 11 Outside air intake mechanism, 12 Outside air introduction pipe, 13 Valve, 14 Second ceiling, 15 Exhaust piping, 17 Opening, 22 Space behind the ceiling.

Claims (5)

A clean room where semiconductor device manufacturing equipment is installed;
Ancillary equipment of the semiconductor device manufacturing apparatus is installed, and a utility room provided via a floor below the clean room,
A first ceiling having an opening and facing the clean room;
A second ceiling provided above the first ceiling;
A space behind the ceiling located above the second ceiling;
Provided on the second ceiling, and cools the air in the clean room on the way to the space behind the ceiling through the opening and the space sandwiched between the first ceiling and the second ceiling. A cooling mechanism;
A semiconductor device, comprising: a duct that communicates the clean room and the space behind the ceiling, and a blowout mechanism that blows out the cooled air in the space behind the ceiling into the clean room via the duct factory.   The semiconductor device factory according to claim 1, wherein the opening is provided above a specific device having a heat generating portion in the semiconductor device manufacturing apparatus.   The floor allows an air flow between the clean room and the utility room in an area where air flows from the semiconductor device manufacturing apparatus toward the floor and an area located below the opening. The semiconductor device factory according to claim 1, comprising a plurality of through holes. A clean room where semiconductor device manufacturing equipment is installed;
Ancillary equipment of the semiconductor device manufacturing apparatus is installed, and a utility room provided via a floor below the clean room,
A first ceiling facing the clean room;
A second ceiling provided above the first ceiling;
A space behind the ceiling located above the second ceiling;
An exhaust pipe connected to the semiconductor device manufacturing apparatus and a space sandwiched between the first ceiling and the second ceiling, and for guiding the hot air discharged by the semiconductor device device to the space behind the ceiling; 2 is provided on the ceiling, and cools while guiding the hot air discharged from the semiconductor device device flowing into the space between the first ceiling and the second ceiling from the exhaust pipe to the space behind the ceiling. A cooling mechanism;
A semiconductor device, comprising: a duct that communicates the clean room and the space behind the ceiling, and a blowout mechanism that blows out the cooled air in the space behind the ceiling into the clean room via the duct factory. An outside air suction mechanism that sucks in outside air;
An outside air introduction pipe for guiding the outside air to the vicinity of the blowing mechanism;
The outside air is blown out from the outside air introduction pipe to the vicinity of the blowing mechanism, and a control mechanism for controlling the amount of the outside air blown is provided,
5. The semiconductor device factory according to claim 1, wherein the control mechanism controls the blowout amount according to a temperature of air in the clean room.

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