JP2005303131A - Manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To clean a deep trench formed in a semiconductor substrate. <P>SOLUTION: An Si wafer 1 after trench etching is set in a chamber 11 so that a trench 1a forming face of the trench faces a gravity direction, HF solution is circulated in the chamber, and chemical cleaning is performed. Thus, HF solution after it intrudes into the trench 1a and an etching product is dissolved is discharged outside the trench 1a with flow of HF solution in the chamber 11 and an operation of gravity. Even if there is the etching product which cannot be dissolved in the trench 1a, it is discharged outside the trench 1a with HF solution. Consequently, the trench 1a can effectively be cleaned. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device using a semiconductor substrate having a trench.

  Conventionally, silicon (Si) wafers and the like in which trenches are formed are widely used for devices such as MOSFETs (Metal Oxide Semiconductor Field Effect Transistors). In recent years, due to the demand for higher breakdown voltage of devices, it has become necessary to form trenches with higher aspect ratios with higher accuracy.

  The trench is usually formed by etching a semiconductor substrate by dry etching such as reactive ion etching (RIE). When trench formation is performed on a semiconductor substrate by such dry etching, a product (etching product) by etching and other impurities remain on the inner wall of the formed trench. Therefore, conventionally, a method of dissolving and removing such an etching product with a chemical solution entering the trench, such as by immersing the semiconductor substrate in a chemical solution such as a hydrogen fluoride (HF) solution after the trench etching, is generally used. Has been used. The semiconductor substrate after such chemical cleaning is then cleaned with pure water and dried with a spin dryer or the like.

FIG. 7 is an explanatory view of a conventional cleaning method for a semiconductor substrate.
As shown in FIG. 7, during chemical cleaning, the semiconductor substrate 100 after trench etching is stored in a carrier 102 in a cleaning tank 101 with the surface thereof set up substantially vertically. The chemical solution is introduced into the tank from a supply nozzle 103 provided in the lower part of the cleaning tank 101, supplied to the semiconductor substrate 100 side through the rectifying plate 104, and surplus is discharged from the upper part of the cleaning tank 101 to the outside of the tank. The In this way, the chemical solution is continuously flowed from the lower portion to the upper portion of the cleaning tank 101, and the semiconductor substrate is cleaned during that time.

  Similarly to pure water cleaning, the semiconductor substrate after chemical cleaning is transferred to the pure water cleaning tank, and then pure water is continuously flowed from the bottom to the top in the pure water cleaning tank. The semiconductor substrate is cleaned by

  With respect to a method for cleaning a semiconductor substrate with a cleaning solution such as a chemical solution or pure water, several proposals have been made so far, particularly for the purpose of effectively cleaning a trench formed in the semiconductor substrate.

  For example, in the same manner as shown in FIG. 7, the semiconductor substrate after trench etching is arranged with its surface substantially vertical, and when the cleaning liquid is flowed from the lower part of the cleaning tank to the upper part, the cleaning liquid is boiled under reduced pressure. There has been proposed a method of cleaning a semiconductor substrate in a cleaning tank using a method (see Patent Document 1). In addition, a method has been proposed in which a semiconductor substrate after trench etching is placed in a depressurized cleaning tank, a cleaning liquid that has been degassed in advance is supplied to the semiconductor substrate, and a semiconductor substrate in the cleaning tank is cleaned using the cleaning liquid. (See Patent Document 2).

In addition, for a horizontal flow type cleaning apparatus that flows the cleaning liquid laterally into the cleaning tank in which the semiconductor substrate is arranged, in order to obtain a uniform flow rate at the entire liquid depth in the cleaning tank, it is passed upstream of the semiconductor substrate. The thing using the two baffle plates from which water resistance differs is proposed (refer patent document 3). Then, when cleaning is performed using this, the semiconductor substrate is disposed in the cleaning tank with its surface substantially horizontal, and the cleaning is performed while moving the semiconductor substrate toward the upstream side of the cleaning liquid.
JP 2001-269634 A (paragraph numbers [0014] to [0018], FIG. 2) JP 11-97401 A (paragraph number [0016], FIG. 1) JP-A-11-76956 (paragraph number [0029], FIG. 1)

  However, as the trench formed in the semiconductor substrate becomes deeper due to recent demands and the aspect ratio becomes higher, it is difficult for the conventional method to infiltrate the cleaning liquid into the trench, and the etching generated from the inner wall is removed. In some cases, objects could not be discharged out of the trench and sufficient cleaning could not be achieved.

FIG. 8 is a schematic cross-sectional view of the semiconductor substrate after the trench etching.
FIG. 8 shows that a semiconductor substrate 200 such as a Si wafer is formed with a relatively high aspect ratio trench having a depth of 5 μm and a width of 1 μm, for example, and then cleaned with a chemical solution using an HF solution or the like. The cross section of the longitudinal direction of the trench 200a when pure water washing | cleaning and making it dry with a spin dryer etc. is shown typically.

  When the trench 200a is formed with a high aspect ratio, for example, as shown in FIG. 8, the granular residue 200b that has not been completely dissolved by the HF solution or the like and has been peeled off from the inner wall of the trench and could not be cleaned, There may be situations where the trench remains, particularly at its end.

  One of the causes of such residues is that, during cleaning, the Si wafer is usually arranged substantially vertically or substantially horizontally in the cleaning tank so that its surface is substantially parallel to the cleaning liquid flow direction. In the case where a trench is formed in the wafer, the direction of the trench formation surface during cleaning is not considered.

  In other words, if the Si wafer is arranged so that the trench forming surface is transverse or opposite to the direction of gravity, the cleaning liquid in the trench is not exchanged (circulated) and is not completely dissolved. When this etching product is generated in the trench, it remains inside without being discharged out of the trench and remains as a granular residue.

  When the cleaned Si wafer is dried by a spin dryer, the granular residue may be collected at the end of the trench due to the centrifugal force applied at that time. When the residue concentrates on the end portion of the trench, particularly in a power device or the like using a trench gate structure, the breakdown voltage is extremely lowered, which causes a problem that the defect rate is increased.

Another factor that hinders the cleaning of the trench is the influence of oxides formed in the trench during the manufacturing process.
For example, while removing the Si wafer from the cleaning tank (HF tank) containing the HF solution and transferring it to another cleaning tank (water washing tank) containing pure water, or while taking it out of the water washing tank and transferring it to a spin dryer or the like, The Si wafer is in a so-called dry state where it is not completely dried. In such a dry state where Si, moisture adhering to it, and oxygen in the atmosphere are in a dry state, the surface of the Si wafer is easily oxidized. Easy to be.

In many cases, the oxide thus produced is not pure SiO ₂ but SiO _x containing impurities in the atmosphere. For this reason, once it is generated, it is difficult to remove it, which may cause problems such as a decrease in the breakdown voltage of the device.

  The present invention has been made in view of the above points, and in a manufacturing process of a semiconductor device using a semiconductor substrate having a trench, the semiconductor substrate can be sufficiently cleaned even if the semiconductor substrate has a deep trench. An object is to provide a method for manufacturing a semiconductor device.

  In the present invention, in order to solve the above problem, in a method of manufacturing a semiconductor device using a semiconductor substrate having a trench, after forming the trench in the semiconductor substrate, the chemical solution is placed with the trench formation surface facing in the direction of gravity. There is provided a method for manufacturing a semiconductor device, characterized by having a chemical solution cleaning step for cleaning the semiconductor substrate by using.

  According to such a method of manufacturing a semiconductor device, since the trench formation surface of the semiconductor substrate that performs chemical cleaning is directed in the direction of gravity, the chemical that has entered the trench due to the flow of the chemical and the action of gravity is It is easier to flow out of the trench than when the surface is lateral or opposite to the direction of gravity. Therefore, the chemical liquid that has entered the trench and dissolved the etching product is discharged out of the trench when the chemical liquid in the trench is replaced. Furthermore, even if there is a free etching product that could not be dissolved in the trench, the etching product is also added to the trench along with the chemical when the chemical in the trench is replaced due to the flow of the chemical and the action of gravity. Discharged outside.

  Also, in the pure water cleaning process that cleans the semiconductor substrate using pure water after the chemical cleaning process and the substrate drying process that is performed after the pure water cleaning process, the trench formation surface is cleaned in the direction of gravity in this way. Alternatively, by drying, the liquid or gas entering the trench or the residue remaining in the trench can be easily discharged to the outside, and the trench can be cleaned.

  Furthermore, the chemical cleaning process and the pure water cleaning process, the pure water cleaning process and the substrate drying process, or the chemical cleaning process, the pure water cleaning process and the substrate drying process should be performed continuously with the semiconductor substrate cut off from the atmosphere. For example, the semiconductor substrate can be cleaned without generating oxide between successive steps.

  In the method for manufacturing a semiconductor device of the present invention, the chemical substrate cleaning process after the trench formation or the subsequent pure water cleaning process or the substrate drying process, the semiconductor substrate is arranged with the trench formation surface facing in the direction of gravity, Since the processes of the respective steps are performed, the trench can be sufficiently cleaned. As a result, the quality of the semiconductor device can be improved. In particular, in the case of a semiconductor device having a trench gate structure, a reduction in breakdown voltage is suppressed, and a high-quality and high-reliability semiconductor device is manufactured with a high yield. Will be able to.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
First, the first embodiment will be described.
1 and 2 are explanatory views of the cleaning method according to the first embodiment. FIG. 1 is a side view of the main part of the cleaning apparatus, and FIG. 2 is a plan view of the main part of the cleaning apparatus.

The cleaning apparatus 10 shown in FIGS. 1 and 2 has a chamber 11 in which a Si wafer 1 can be set in a sealed state. The Si wafer 1 is fixed to a wafer guide 12 and disposed in the chamber 11. It has become so. The chamber 11 is provided with a rotation shaft 13. The rotation of the rotation shaft 13 rotates the chamber 11, and the orientation of the surface of the Si wafer 1 set in the chamber 11 is movable with respect to the direction of gravity. It has become. The rotary shaft 13 has a supply port 14 for supplying a liquid such as HF solution or pure water or a gas such as nitrogen (N ₂ ) into the chamber 11 on one side, and on the other side. A discharge port 15 for discharging the liquid or gas supplied into the chamber 11 using a pump or the like is provided. In the chamber 11, a rectifying plate 16 is provided between the supply port 14 and the Si wafer 1, and an uneven flow velocity distribution in the chamber 11 of liquid or gas supplied from the supply port 14 occurs. Suppressed. The chamber 11 is attached to a support base 17.

  In cleaning the wafer 1, the chamber 11 has a rotating shaft so that the trench 1 a formed on the surface of the Si wafer 1 faces in the direction of gravity (downward in FIG. 1) as shown in FIG. 1. 13 is rotated in advance around 13 and is fixed at the place where the trench 1a formation surface of the Si wafer 1 is directed in the direction of gravity during cleaning.

  When performing chemical cleaning of the Si wafer 1 using the cleaning apparatus 10 having such a configuration, first, a trench 1a is formed in the Si wafer 1 by dry etching, and then the Si wafer 1 is removed from the chamber of the cleaning apparatus 10. 11 is set. Then, gas is drawn from the discharge port 15 by a vacuum pump, and the inside of the chamber 11 is decompressed. Then, for example, a 0.5% HF solution is supplied from the supply port 14 as a chemical solution, the Si wafer 1 is immersed in the HF solution, and the excess is discharged from the discharge port 15 while the HF solution is continuously supplied. In a state where a certain amount is filled in the chamber 11. After the chemical cleaning, the supply of the HF solution is stopped, and generally the entire amount of the HF solution after processing in the chamber 11 is discharged.

  When the Si wafer 1 is immersed in the HF solution and the HF solution enters the trench 1a, the etching product is dissolved or removed from the trench 1a and removed. The etching product dissolved in the HF solution is discharged out of the trench 1a when the HF solution in the trench 1a is replaced by the flow of the HF solution in the chamber 11 and the action of gravity. Further, even if there is a free etching product that has not been completely dissolved in the trench 1a by the HF solution, the etching product is also caused by the flow of the HF solution in the chamber 11 and the action of gravity. When the HF solution inside is replaced, it is discharged out of the trench 1a together with the HF solution.

  In this way, the Si wafer 1 is set in the chamber 11 and the HF solution is circulated. At this time, the Si wafer 1 is arranged so that the surface on which the trench 1a is formed is directed in the direction of gravity. As a result, the etching product in the trench 1a can be effectively discharged out of the trench 1a, and the trench 1a can be cleaned.

After the chemical cleaning, the Si wafer 1 is cleaned using pure water.
The pure water cleaning is performed in the same procedure as in the case of chemical cleaning except that the HF solution used in the chemical cleaning is replaced with pure water. That is, the Si wafer 1 is placed in the chamber 11 with the trench 1a formation surface facing in the direction of gravity, and the treated liquid is discharged from the discharge port 15 while supplying pure water from the supply port. After the pure water cleaning, the supply of pure water is stopped, and almost all of the processed liquid in the chamber 11 is discharged.

  Also in this pure water cleaning, since the trench 1a forming surface of the Si wafer 1 is directed in the direction of gravity, the HF remaining on the surface of the Si wafer 1 after the chemical cleaning is caused by the flow of pure water in the chamber 11 and the action of gravity. The solution, particularly the HF solution remaining in the trench 1a is replaced with pure water, and the trench 1a is effectively cleaned. At this time, the residue remaining in the trench 1a may be cleaned.

When shifting from the above chemical cleaning to the pure water cleaning, after the chemical cleaning, the processed HF solution is discharged without flowing the air into the chamber 11, and the Si wafer 1 is then brought into the air as it is. It is desirable to supply pure water to the chamber 11 without exposure. For example, after the supply of the HF solution is stopped, the processed HF solution is extracted while supplying a gas that does not oxidize the Si wafer 1 such as N ₂ or argon (Ar) to the chamber 11. Alternatively, pure water can be supplied as it is without discharging the liquid after chemical cleaning, and the HF concentration in the chamber 11 can be gradually reduced.

In this way, the Si wafer 1 is shut off from the atmosphere when shifting from the chemical cleaning to the pure water cleaning, thereby preventing the oxide such as SiO _x containing impurities in the atmosphere from being generated in the trench 1a. Can be achieved and further cleaning can be achieved.

After the pure water cleaning, the Si wafer 1 using N ₂ is dried.
Dry N ₂ is used for drying, and dry N ₂ is supplied from the supply port 14 into the chamber 11 and discharged from the discharge port 15 with the Si wafer 1 having its trench 1a formation surface directed in the direction of gravity. Thus, the Si wafer 1 inside is dried by circulating the dry N ₂ in the chamber 11.

When such a substrate is dried, the temperature of the dry N ₂ is effective even at room temperature, but if the temperature is increased, the drying time can be shortened. Further, when supplying dry N ₂ into the chamber 11, if a vapor of a volatile solution such as isopropyl alcohol (IPA) is supplied at the same time, the drying time can be further shortened. Further, at the time of drying using such dry N ₂ , IPA or the like, the chamber 11 may be rotated to shake off the remaining droplets on the Si wafer 1.

When shifting from the above pure water cleaning to this substrate drying, as in the case of shifting from the above chemical cleaning to pure water cleaning, the liquid after the processing is put into the chamber 11 after the pure water cleaning. It is desirable to supply dry N ₂ or the like into the chamber 11 without exposing the Si wafer 1 to the atmosphere as it is, after discharging it without causing the atmosphere to flow. Thereby, when shifting from pure water cleaning to substrate drying, it is possible to prevent generation of SiO _x or the like in the trench 1a.

  All of the above chemical cleaning, pure water cleaning and substrate drying performed with the trench 1a formation surface of the Si wafer 1 directed in the direction of gravity are continuously performed in a state where the Si wafer 1 is shielded from the atmosphere. When a power device was formed using the wafer 1, the breakdown voltage failure rate could be reduced by about 5%.

Next, a second embodiment will be described.
3 and 4 are explanatory views of the cleaning method of the second embodiment. FIG. 3 is a view when the trench formation surface of the Si wafer is arranged perpendicular to the direction of gravity, and FIG. It is a figure when arrange | positioning the trench formation surface of a wafer toward the direction of gravity. However, in FIG. 3 and FIG. 4, the same elements as those shown in FIG. 1 and FIG.

  In the second embodiment, after the Si wafer 1 is set in the chamber 11 of the cleaning apparatus 10 and before the chemical solution cleaning, first, as shown in FIG. Then, the chamber 11 is rotated so as to be vertically oriented. In this state, pure water is supplied into the chamber 11 and the inside is filled with pure water. At that time, since the trench 1a formation surface is perpendicular to the direction of gravity, the pure water spreads in the trench 1a when pure water is supplied, and the trench 1a hardly generates bubbles or the like in the trench 1a. The inside can be filled with liquid.

  After the chamber 11 is filled with pure water in this way, the chamber 11 is rotated so that the surface on which the trench 1a is formed faces the direction of gravity as shown in FIG. 4, as in the first embodiment. Let Then, the 0.5% HF solution is supplied as it is from the supply port 14 without extracting the pure water in the chamber 11, and the chemical cleaning is started. The chemical liquid cleaning, the subsequent pure water cleaning, and the substrate drying are performed in the same manner as in the first embodiment.

  When this method is used, and chemical cleaning, pure water cleaning, and substrate drying are all performed continuously while the Si wafer 1 is cut off from the atmosphere, a power device is formed using the Si wafer 1 obtained thereby. The breakdown voltage failure rate could be reduced by about 5%.

Next, a third embodiment will be described.
In the above description, the case where the Si wafers 1 are processed one by one has been described as an example. Of course, a plurality of Si wafers 1 may be simultaneously processed in one batch.

  5 and 6 are explanatory views of the cleaning method of the third embodiment. FIG. 5 is a side view of a main part of a cleaning apparatus capable of processing a plurality of sheets, and FIG. 6 is a cleaning apparatus capable of processing a plurality of sheets. FIG. 5 and 6, the same elements as those shown in FIGS. 1 and 2 are denoted by the same reference numerals, and detailed description thereof is omitted.

  The cleaning apparatus 20 shown in FIGS. 5 and 6 has a chamber 21 in which a plurality of Si wafers 1 can be set in parallel while facing each other in a sealed state. Each Si wafer 1 is a wafer. The cleaning device 10 is different from the cleaning device 10 of the first embodiment in that it is fixed to the guide 22 and arranged in the chamber 21. Other configurations are the same as those of the cleaning apparatus 10 of the first embodiment. However, when a plurality of Si wafers 1 are set in the chamber 21 in the cleaning apparatus 20, the trench 1a formation surface of each Si wafer 1 is arranged in one direction.

  When performing chemical cleaning of a plurality of Si wafers 1 using the cleaning apparatus 20 having such a configuration, for example, as described in the first embodiment, the trench of the Si wafer 1 is formed by the rotating shaft 13. The 1a formation surface is directed in the direction of gravity, and the HF solution is circulated in the chamber 21 to perform chemical cleaning. Thereafter, pure water cleaning and substrate drying are performed with the trench 1a forming surface facing the direction of gravity. Between chemical solution cleaning and pure water cleaning, between pure water cleaning and substrate drying, the Si wafer 1 may be shut off from the atmosphere, and each process may be performed continuously. You may make it rotate.

  Further, using the cleaning device 20, as described in the second embodiment, prior to the chemical cleaning, the trench 1a formation surface of the Si wafer 1 is oriented substantially perpendicular to the direction of gravity, and the inside of the chamber 21 is directed. After filling with pure water, chemical cleaning, pure water cleaning, and substrate drying may be performed. Also in this case, during the chemical solution cleaning and the pure water cleaning, and between the pure water cleaning and the substrate drying, the Si wafer 1 may be shut off from the atmosphere and each processing may be continuously performed. Alternatively, the chamber 21 may be rotated.

  By using the cleaning apparatus 20 capable of simultaneously processing a plurality of Si wafers 1 in this way, the throughput in the cleaning after trench etching and the respective processes accompanying it, and the manufacturing process of a semiconductor device using such a Si wafer 1 can be reduced. It becomes possible to greatly improve.

  As described above, when performing chemical cleaning of the Si wafer 1 having the trench 1a, or when performing subsequent pure water cleaning or substrate drying, the chambers 11 and 21 with the trench 1a formation surface facing in the direction of gravity. A Si wafer 1 is placed inside. Thereby, the etching product can be effectively removed by utilizing the flow of HF solution in the chambers 11 and 21 and the action of gravity, and the trench can be cleaned. By forming a device using the Si wafer 1 thus cleaned, the quality can be improved. In particular, in a device having a trench gate structure, the decrease in breakdown voltage is suppressed, It becomes possible to manufacture quality and highly reliable semiconductor devices with a high yield.

  In the above description, the HF solution is used as the chemical solution used to remove the etching product in the trench 1a. However, the type of the chemical solution is not limited to this as long as it contains HF. For example, the same effect can be obtained even with an HF solution containing buffered hydrogen fluoride (BHF) or a surfactant.

It is a principal part side view of a washing | cleaning apparatus. It is a principal part top view of a washing | cleaning apparatus. It is a figure when the trench formation surface of Si wafer is arrange | positioned in the orthogonal | vertical direction with respect to the gravity direction. It is a figure when arrange | positioning the trench formation surface of Si wafer toward the direction of gravity. It is a principal part side view of the washing | cleaning apparatus which can process several sheets. It is a principal part top view of the washing | cleaning apparatus which can process several sheets. It is explanatory drawing of the conventional cleaning method of a semiconductor substrate. It is a cross-sectional schematic diagram of the semiconductor substrate after trench etching.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Si wafer 1a Trench 10,20 Cleaning apparatus 11,21 Chamber 12,22 Wafer guide 13 Rotating shaft 14 Supply port 15 Discharge port 16 Current plate 17 Support stand

Claims (5)

In a method for manufacturing a semiconductor device using a semiconductor substrate having a trench,
A method of manufacturing a semiconductor device, comprising: a chemical solution cleaning step of cleaning the semiconductor substrate with a chemical solution in a state where the trench formation surface is directed in the direction of gravity after forming the trench in the semiconductor substrate. .   2. The semiconductor according to claim 1, further comprising a pure water cleaning step of cleaning the semiconductor substrate using pure water in a state in which the formation surface of the trench is directed in the direction of gravity after the chemical solution cleaning step. Device manufacturing method.   3. The method of manufacturing a semiconductor device according to claim 2, wherein the chemical solution cleaning step and the pure water cleaning step are continuously performed in a state where the semiconductor substrate is shielded from the atmosphere.   3. The method of manufacturing a semiconductor device according to claim 2, further comprising a substrate drying step of drying the semiconductor substrate after the pure water cleaning step, with the formation surface of the trench directed in the direction of gravity.   5. The method for manufacturing a semiconductor device according to claim 4, wherein the chemical solution cleaning step, the pure water cleaning step, and the substrate drying step are continuously performed in a state where the semiconductor substrate is shielded from the atmosphere.

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