JP2005285227A - Optical recording and reproducing method and optical recording and reproducing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a recording and reproducing apparatus capable of recording information in a recording medium with high density and high accuracy and reproducing the information. <P>SOLUTION: A recording and reproducing method and device are provided, using an optical recording medium wherein a mask layer whose refractive index is reversibly changed at prescribed temperature is disposed on a recording layer. The recording and reproducing method includes a step for emitting an optical beam along an optical axis toward a recording part of the recording layer and a step for irradiating a prescribed part of the mask layer crossing the optical axis of the optical beam with an electron beam to heat the mask up to a prescribed temperature or above and forming a gate part having a size which penetrates through the mask layer and does not transmit the light beam. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to an optical recording / reproducing method and an apparatus using the method, and in particular, uses an optical recording / reproducing method for recording and reproducing information with high density using near-field light and the method. Relates to the device.

  By using near-field light (evanescent light), information can be optically recorded and reproduced with high density exceeding the limit of wavelength resolution of light. Among such optical recording / reproducing methods, the Super-RENS (Super-resolution near-field structure) method is a method in which a fine aperture having a high light transmittance is formed in a mask layer in a recording medium by a laser beam. In this method, information is recorded on and / or reproduced from the recording film by near-field light generated at the tip of the minute opening. This Super-RENS method has many advantages, such as that the control mechanism can be easily configured as compared with a method of generating and recording near-field light by a near-field probe. For example, see Non-Patent Document 1.

  As shown in FIG. 1, a recording medium 101 based on the Super-RENS method typically includes at least a recording layer 105 and a mask layer 107 thereon. The mask layer 107 is generally formed of a nonlinear optical material such as Sb (antimony) or AgOx. When the mask layer 107 is partially irradiated with a laser beam having a certain intensity or more, the portion is heated to cause a reversible crystal-crystal phase transition. Due to this phase transition, the refractive index of the irradiated laser beam changes from a low transmittance state (opaque state) to a high transmittance state (transparent state). The portion where the refractive index has changed is the opening 109. Subsequently, when the intensity of the irradiated laser beam decreases and the portion is cooled, a reverse phase transition occurs. By this phase transition, the refractive index changes from a state with a high transmittance (transparent state) to the irradiation laser beam to a state with a low original transmittance (an opaque state), and the opening 109 is closed. For example, see Patent Documents 2 and 3.

  The mask layer 107 is irradiated with the laser beam, and an opening 109 is generated in the mask layer 107. When the size of the opening 109 is about several tens of nanometers smaller than the wavelength of the irradiated laser beam (typically about several hundred nanometers), the irradiated laser beam is no longer small. It is impossible to pass through the opening 109 as it is and pass through the opposite side of the mask layer 109. At this time, a scatterer 111 is formed inside the minute opening 109. Then, in the tip direction of the minute opening 109 (the surface direction opposite to the surface on the mask layer 107 on which the laser beam is incident), the near field light 113 is slightly projected from the minute opening 109 of the mask layer 107. It is.

Under the mask layer 107, there is a recording layer 105 made of, for example, Ge ₂ Sb ₂ Te _{5. When} the near-field light 113 reaches the recording layer 105, the portion undergoes a phase transition and a recording mark 115 is formed. The As a result, information can be recorded. When reproducing information, the scattered light generated by the near-field light 113 being scattered by the recording marks 115 already formed in the recording layer 105 is received through the opening 109. As a result, information can be reproduced.
“Super-high density optical recording using Super-RENS”, optical technology contact Vol. 39, no. 6 (2001) pp. 27-31 JP-A-8-7333 JP 2002-25138 A

  With further reference to FIG. 1, it is preferable that the size of the recording mark 115 formed on the recording layer 105 is smaller because information can be recorded at a higher density.

  Here, the size of the recording mark 115 formed in the recording layer 105 depends on the size of the opening 109 formed in the mask layer 107. That is, in order to record / reproduce information with high density, it is preferable to make the opening 109 as small as possible.

  As understood with reference to the intensity distribution diagram of FIG. 1, the laser beam applied to the mask layer 107 generally has a light intensity distribution 116 having a Gaussian distribution. In this light intensity distribution 116, an opening 109 is formed corresponding to a portion 117 having an intensity higher than a certain light intensity E. Therefore, the size (diameter) W of the opening 109 can be reduced by making the light intensity threshold E relatively close to the highest intensity of the Gaussian distribution. That is, the light corresponding to the central portion of the laser beam, that is, the portion with a small change (gradient) in the light intensity along the radial direction is used for forming the opening 109, so the radial direction in the mask layer 107 The temperature gradient that occurs in this mode becomes gradual. In such a case, the width W of the opening 109 formed in the mask layer 107 is not stable, and as a result, the recording mark 115 cannot be stably formed in the recording layer 105.

  Accordingly, the present invention provides an optical recording / reproducing method and a method for forming recording marks with high density and high precision on a recording layer using the Super-RENS method for the purpose of solving the above problems. The apparatus used is provided.

In the optical recording / reproducing method according to the present invention, a light beam emitted from a light source is guided to a recording layer through a mask layer in a recording medium to record information, or a light beam reflected by the recording layer is received by a photodetector. An optical recording / reproducing method for reproducing information, wherein a light beam is emitted along an optical axis directed to a recording portion of the recording layer in order to record and / or reproduce information on the recording layer. And a step of irradiating a predetermined portion of the mask layer where the optical axes of the light beam intersect with each other by irradiating an electron beam to a predetermined temperature or more, passing through the mask layer and not transmitting the light beam. Forming a gate portion.
In the optical recording / reproducing method according to the present invention, a light beam emitted from a light source is guided to a recording layer through a mask layer in a recording medium to record information, or a light beam reflected by the recording layer is received by a photodetector. An information recording / reproducing method for reproducing information, wherein a predetermined portion of the mask layer of the recording medium is irradiated with an electron beam and heated to a predetermined temperature or more, penetrates the mask layer, and the light Forming a gate portion having a size that does not transmit a beam; and irradiating the predetermined portion with a light beam.

 An optical recording / reproducing apparatus according to the present invention guides a light beam emitted from a light source to a recording layer through a mask layer in a recording medium to record information, or receives a light beam reflected by the recording layer by a photodetector. An optical recording / reproducing apparatus for reproducing information and emitting a light beam along an optical axis directed to a recording portion of the recording layer in order to record and / or reproduce information on the recording layer A laser light source, and an electron beam source that irradiates a predetermined portion of the mask layer where the optical axes of the light beams intersect with each other, and the electron beam source has a predetermined temperature of the mask at a predetermined temperature. By heating as described above, a gate portion having a size that penetrates the mask layer and does not transmit the light beam is formed.

  An optical recording / reproducing apparatus according to the present invention guides a light beam emitted from a light source to a recording layer through a mask layer in a recording medium to record information, or receives a light beam reflected by the recording layer by a photodetector. An optical recording / reproducing apparatus for reproducing information, wherein a light beam is emitted along an optical axis directed to a recording portion of the recording layer in order to record and / or reproduce information on the recording layer A laser light source, an electron beam source for irradiating the mask layer with an electron beam, and a moving means for moving the recording medium so that the portion of the mask layer irradiated with the electron beam is irradiated with the light beam And the electron beam source heats the portion of the mask layer to a predetermined temperature or more to form a gate portion that is sized to penetrate the mask layer and not transmit the light beam. Features.

BEST MODE FOR CARRYING OUT THE INVENTION

As shown in FIG. 2, the disc-shaped recording medium 1 used in the information recording / reproducing system according to the present invention is not limited to this, but typically a substrate 3 made of a resin such as glass or polycarbonate. A multilayer recording disk in which a first protective layer 5, a recording layer 7, a second protective layer 9, and a mask layer 11 are formed on each of them by sputtering or the like. Here, the first protective layer 5 is made of SiN and has a thickness of about 20 nm. The recording layer 7 is made of Ge ₂ Sb ₂ Te ₅ and has a thickness of about 15 nm. Ge ₂ Sb ₂ Te ₅ can record information by changing the two phase states of a crystalline phase and an amorphous phase having different reflectivities upon irradiation with light. The second protective layer 9 is made of a material that can transmit a laser beam such as SiN, and the thickness is not a thickness that allows the near-field light 23 to reach the recording layer 7 through the second protective layer 9 as will be described later. Don't be. Generally, the generation region of near-field light is equal to or less than the wavelength of light, but depends on the intensity of the laser beam and the size of the opening 21. Here, the thickness is about 20 nm. The mask layer 11 is made of Sb and has a thickness of about 15 nm. The first protective layer 5 and the second protective layer 9 may be ZnS—SiO ₂ or the like.

As shown in FIG. 3, another disc-shaped recording medium 1 ′ used in the information recording / reproducing system according to the present invention further includes a third protective layer 13 on the mask layer 11. In particular, when the mask layer 11 is made of AgOx, it is preferable to sandwich the mask layer 11 together with the second protective layer 9 to prevent the dissipation of oxygen accompanying the decomposition of AgOx (details will be described later). . The third protective layer 13 is also a material that can transmit a laser beam, and must be a material that can transmit an electron beam. The third protective layer 13 can also be formed of the same SiN or ZnS—SiO ₂ as the first protective layer 5 and the second protective layer 9. The thickness of the third protective layer 13 must be such that the electron beam and the laser beam can reach the mask layer 11 therebelow. This is typically about 5 nm or less, depending on the intensity of the electron beam and laser beam.

  Further, as another disk-shaped recording medium used in the information recording / reproducing system according to the present invention, a magneto-optical disk can be formed by using TbFeCo for the recording layer 7.

  As described above, a known disk for recording / reproducing information using near-field light can be used as it is as a disk used in the recording / reproducing system according to the present invention. Further, the thickness, material, and the like of each layer can be appropriately changed according to the specifications of the information recording / reproducing system according to the present invention.

  The super high density near-field optical recording / reproducing system using the Super-RENS method according to the first embodiment of the present invention will be described with reference to FIGS.

  The electron beam gun 31 is an electron beam generation source for forming the opening 21 in the mask layer 11 of the recording medium 1. The laser light source 41 is a laser beam light source for forming the near-field light 23 in the vicinity of the opening 21. That is, the apparatus according to the first embodiment of the present invention has two beam sources. The laser light source 41 is a short wavelength laser light source having a wavelength of about 600 nm. The disc-shaped recording medium 1 is disposed on an X-θ stage 51 so as to be rotatable. Between the laser light source 41 and the recording medium 1, a mirror 43, a beam splitter 45, and an objective optical lens 47 for guiding and condensing the laser beam onto the recording medium 1 are disposed. Conductor beam paths 43 ′, 45 ′, and 47 ′ for allowing the electron beam to pass therethrough are provided at the central portions of the mirror 43, the beam splitter 45, and the objective optical lens 47 (see in particular FIG. 5). Wanna) Through the conductor beam paths 43 ′, 45 ′ and 47 ′, the electron beam is guided to the mask layer 11 of the recording medium 1 to form the opening 21. Further, the near-field light 23 is formed in the opening 21 by condensing the laser beam by the objective optical lens 47. The electron beam gun 31, the laser light source 41, the mirror 43, the beam splitter 45, and the lens 47 are arranged so that the path axes of the electron beam and the laser beam coincide with each other and enter the recording medium 1.

Here, bending the traveling direction of the electron beam is disadvantageous in simplifying the mechanism of the apparatus. Therefore, typically, the electron beam gun is disposed to face the recording medium 1, and the electron beam is guided onto the recording medium 1 through the straight path P. On the other hand, the laser light source 41 is arranged so as to avoid the path P of the electron beam in order to avoid interference with the electron beam, and the laser beam is guided onto the recording medium 1 by being bent by the mirror 43. As described above, the electron beam and the laser beam need to be guided coaxially on the recording medium 1, but as long as the coaxiality of the two beams can be achieved on the recording medium 1, other mechanisms are possible. And an arrangement of elements may be employed.
In general, in order to efficiently guide the electron beam from the electron beam gun 31 to the recording medium, it is necessary to maintain a vacuum state between the recording medium 1 that is the path of the electron beam and the electron beam gun 31. is there. Therefore, at least the electron beam gun 31, the lens 47, and the recording medium 1 are disposed in the vacuum chamber 71.
According to the first embodiment of the present invention, since the independent forming means for forming the opening 21 and forming the near-field light 23 is provided, the formation of the opening 21 and the formation of the near-field light 23 are provided. The two processes can be controlled independently. Therefore, information can be recorded on the recording medium 1 with high density and high accuracy, and can be reproduced.

  Next, the information recording operation of the ultra high density near-field optical recording / reproducing system according to the first embodiment of the present invention will be described with reference to FIGS.

  At the time of recording information, a trigger is sent to the central processing unit 61 and a drive signal is sent to the X-θ stage drive controller 63. Upon receiving this drive signal, the drive controller 63 moves the X-θ stage 51 at a high speed so that the portion on the recording medium 1 where information recording is desired is positioned at a predetermined position where the irradiation with the electron beam and the laser beam is performed. Move. When the movement of the X-θ stage 51 is completed, the drive controller 63 sends a movement completion signal to the central processing unit 61.

  When the central processing unit 61 receives the movement completion signal, the central processing unit 61 then sends an electron beam irradiation signal to the electron beam deflection controller 65.

A voltage is applied to the electron beam gun 31 in advance, and an electron beam is always generated from the electron beam gun 31. However, as shown in FIG. 6, a constant voltage E ₁ is applied between the pair of blanking plates 33 in advance, and the traveling direction of the electron beam is offset from the path P (state P _o ). In the traveling direction of the electron beam, a diaphragm plate (aperture plate) 35 having a circular diaphragm (through hole) 35 ′ is arranged at the center so as to block this, and the diaphragm 35 ′ is an electron passing through the path P. Pass only the beam. Therefore, when the voltage E ₁ is applied to the pair of blanking plates 33, the electron beam offset from the path P cannot pass through the diaphragm 35 ′ of the diaphragm plate 35.

On the other hand, when the electron beam deflection controller 65 receives the electron beam irradiation signal, the current to the blanking plate 33 is cut off, or the voltage between the pair of blanking plates 33 is changed to a voltage E ₂ different from E _1. Thus, the traveling direction of the electron beam is deflected so as to coincide with the path P.

The aperture diameter W ₁ can be adjusted to be smaller than the spot diameter W ₂ of the electron beam that has reached the aperture plate 35, and the spot diameter of the electron beam passing through the aperture plate 35 can be adjusted.

  As another embodiment, the direction of the electron beam gun 31 is adjusted so that the traveling direction of the electron beam emitted from the electron beam gun 31 is offset from the path P in a state where no voltage is applied to the blanking plate 33. Also good. In this case, when a voltage is applied to the pair of blanking plates 33 by the electron beam deflection controller 65, the traveling direction of the electron beam coincides with the path P, and the electron beam passes through the diaphragm 35 ′ of the diaphragm plate 35. It is.

  As described above, when the blanking plate 33 and the diaphragm plate 35 are used to turn on / off the electron beam to the path P, the electron beam is not provided. Can be performed at high speed, and the direction of the electron beam can be controlled with high accuracy and stability.

  Of course, the electron beam may be controlled using a known shutter (not shown, the same applies hereinafter). For example, when the central processing unit 61 receives a signal notifying that the movement of the X-θ stage 51 is completed, a signal is sent from the central processing unit 61 to an electron beam shutter controller (not shown), and the shutter of the electron beam is activated. Open. Here, as described above, a voltage is applied to the electron beam gun 31 in advance, and an electron beam is generated from the electron beam gun 31. However, there is a shutter on the path P of the electron beam, and the shutter is normally closed so as to block the electron beam from the path P. Here, the electron beam is directed to the path P by opening the shutter. In this case, it is preferable to adjust the spot diameter of the electron beam by providing the diaphragm plate 35 either upstream or downstream of the shutter.

  When the electron beam is directed to the path P, the electron beam passes through the conductor beam paths 43 ′, 45 ′, 47 ′ provided at the centers of the mirror 43, the half mirror 45, and the objective optical lens 47, and The recording medium 1 is reached.

When the electron beam is incident on the mask layer 11 of the recording medium 1, the temperature of the irradiated portion increases rapidly. In the case where the mask layer 11 is Sb, a crystal-crystal phase transition occurs due to a temperature rise, and the laser beam has a low transmittance (opaque state) to a high transmittance state ( The refractive index changes to a transparent state. In the case where the mask layer 11 is Ag _x O, Ag _x O is decomposed into oxygen and silver as the temperature rises, and the transmittance of the laser beam is changed from Ag _x O having a low transmittance to the laser beam. Change to high Ag. The diameter of the electron beam on the mask layer 11 can be adjusted by adjusting the diaphragm 35 ′ and the objective lens 37 of the diaphragm plate 35, and the size of the opening 21 can be adjusted. When the mask layer 11 is partially heated using an electron beam, an intensity distribution having a narrow temperature distribution and a steep temperature gradient is stably obtained as compared with a laser beam. Typically, the size of the opening 21 is about 50 nm, which is much smaller than about 600 nm, which is the wavelength of a short wavelength laser element used for a laser light source.

  On the other hand, when the central processing unit 61 sends an electron beam irradiation signal to the electron beam deflection controller 65, it sends an information recording signal to the laser drive controller 67 almost simultaneously. Upon receiving this signal, the laser drive controller 67 sends a drive current to the laser light source 41. The laser light source 41 generates a laser beam corresponding to the drive current. The laser beam is condensed on the recording medium 1 via the mirror 43, the beam splitter 45 and the objective optical lens 47. Here, even if the laser beam diameter is sufficiently narrowed by the objective optical lens 47, the diameter of the opening 21 formed by the electron beam is very small compared to the wavelength of the laser beam. You cannot pass through. As described above, near-field light 23 distributed in the range of the diameter of the opening 21 is generated on the back side of the mask layer 11. If the mask layer is irradiated with the laser beam before the opening 21 is formed in the mask layer 11, the near-field light 23 is also formed at the same time as the opening 21 is formed. It is preferable because information can be recorded. Therefore, the information processing signal may be sent to the laser drive controller 67 before the central processing unit 61 sends the electron beam irradiation signal to the electron beam deflection controller 65.

  When the second protective layer 9 is present, the near-field light 23 can reach the recording layer 7 through the second protective layer 9. The portion of the recording layer 7 that has been irradiated with the near-field light 23 instantaneously and partially changes from the crystalline phase to the amorphous phase or from the amorphous phase to the crystalline phase. 'Is formed. Here, as described above, since the distribution range of the near-field light 23 is very narrow, the size of the recording mark 7 ′ is also very fine.

The central processing unit 61 is inputted in advance with a standard time T from when the electron beam irradiation signal is sent until the recording mark 7 ′ is formed on the recording layer 7. Thus, when time passes T, the central processing unit 61 sends out an electron beam cut-off signal to the electron beam deflection controller 65, blanking the ranking plate 33 is added a predetermined voltage E _1, the electron beam traveling direction is the original return from path P is a traveling direction of the electron beam to offset state P _o, the electron beam by the aperture plate 35 is to be blocked path. The direction of the electron beam gun 31 is adjusted so that the traveling direction of the electron beam emitted from the electron beam gun 31 is offset from the path P when no voltage is applied to the blanking plate 33. Even in the case of the embodiment, when the voltage to the blanking plate 33 returns to the original state, the traveling direction of the electron beam returns to the original offset state from the path P, and the electron beam travels the path by the diaphragm plate 35. It is blocked. Further, even in the case of the above-described other embodiments using the shutter for opening and closing the electron beam, a signal is sent from the central processing unit 61 to the electron beam shutter controller, and the shutter of the electron beam is closed and the electron beam is closed. The path of the beam is blocked from the path P. When the irradiation of the electron beam to the mask layer 11 of the recording medium 1 is blocked, the temperature of the irradiated portion rapidly decreases to near room temperature. In the case where the mask layer 11 is Sb, the temperature drop causes a crystal-crystal phase transition opposite to that when the electron beam is incident, and the laser beam has a high transmittance (transparent state). ) To a low transmittance state (opaque state). In the case where the mask layer 11 is Ag _x O, Ag is combined with oxygen again to return to Ag _x O due to a decrease in temperature, and the transmittance is low from Ag having a high transmittance to the laser beam. Return to Ag _x O. As the opening 21 is blocked, the near-field light 23 generated in the vicinity of the recording layer 7 also disappears. Since the mask layer 11 is sandwiched between the second protective layer 9 and the third protective layer 13, oxygen generated by decomposition of Ag _x O during the formation of the opening 21 is dissipated even when the opening 21 is closed. It is not.

  Thus, the step of forming one recording mark 7 'on the recording layer 7 is completed. In order to continuously form the recording mark 7 ', the above-described steps are repeated.

  Next, an information reading operation of the ultra high density near-field optical recording / reproducing system according to the embodiment of the present invention will be described.

  Referring to FIG. 4 again, when reading information, a trigger is sent to the central processing unit 61 and a drive signal is sent to the X-θ stage drive controller 63, and the X-θ stage 51 moves. The process up to the point where the electron beam is incident on the mask layer 11 is the same as the information recording operation described above, and therefore will not be described in detail.

  Further, when the central processing unit 61 sends an electron beam irradiation signal to the electron beam deflection controller 65, it sends an information read signal to the laser drive controller 67 almost simultaneously. The laser drive controller 67 generates a drive current and sends it to the laser light source 41. The driving current at this time is preferably set to be smaller than the driving current at the time of information recording so as not to overwrite the recording mark 7 ′ on the recording layer 7. The laser beam is condensed on the recording medium 1 via the mirror 43, the beam splitter 45, and the objective optical lens 47, and near-field light 23 is generated on the back side of the mask layer 11. This is the same as in the information recording operation.

  When the near-field light 23 is reflected by the recording mark 7 ′ of the recording layer 7, the reflected light follows the path opposite to the incidence of the laser beam on the recording medium from the objective optical lens 47 to the beam splitter 45. A part of the reflected light branched by the beam splitter 45 enters the information detector 49, and a signal is output to the signal processing circuit 69 for processing. Since these are known techniques, they will not be described in detail here.

  The central processing unit 61 is inputted in advance with a standard time T ′ required for reading the recording mark 7 ′ of the recording layer 7 from the transmission of the electron beam irradiation signal. When the time T ′ elapses, the central processing unit 61 sends an electron beam blocking signal to the electron beam deflection controller 65, and the path of the electron beam is blocked by the diaphragm plate 35. Since this is also the same as that at the time of information recording, it will not be described in detail here.

  This completes the step of reading one recording mark 7 'on the recording layer. These steps are repeated for further reading of the recording mark 7 '.

  In the first embodiment of the present invention, as described above, laser beams having different intensities are used during recording and reproduction of information. Even in such a case, the same opening 21 can be obtained during information recording and reproduction.

  A super high density near-field optical recording / reproducing system using the Super-RENS method according to the second embodiment of the present invention will be described with reference to FIGS.

  The system according to another embodiment of the present invention differs from the system according to the first embodiment described above in the arrangement of the electron beam gun 31 and the laser light source 41. The laser light source 41 is disposed at a position perpendicular to the disk surface of the recording medium 1 and opposed thereto, and a laser beam is incident on the recording medium 1 perpendicularly (path P ′). The electron beam gun 31 is placed at a position X where the laser beam is incident on the recording medium 1, that is, a position X on the recording medium 1 where information is to be recorded or read from the recording medium 1, at an incident angle θ. It arrange | positions so that it may inject. That is, the electron beam gun 31 is arranged at a position offset from the path P ′.

As shown in FIG. 8, as a system according to another embodiment of the present invention, an electron beam gun 41 is arranged so that an electron beam is incident on the recording medium 1 with an incident angle θ _e . A laser light source 41 is arranged so that the laser beam is incident on the recording medium 1 at an incident position X with an incident angle θ _B with respect to the recording medium 1. In such a case, as compared with the case where only the electron beam is incident on the recording medium 1 obliquely as described above, the irradiation angle θ _e of the electron beam to the recording medium 1 can be reduced, and the opening 21 is a mask. It is preferable because the layer 11 can be formed with high accuracy substantially perpendicular to the thickness direction.

  With the above configuration, the mirror 43 (see FIGS. 2 and 3) is not used, and the configuration can be simplified. Further, since the electron beam passes through the side of the beam splitter 45 and the objective optical lens 47, it is not necessary to provide the electron beam paths 45 ′ and 47 ′ in the first embodiment in the beam splitter 45 and the objective optical lens 47. The element can be simplified.

  Since the information recording / reading operation is the same as that of the system of the first embodiment, it will not be described in detail here.

  A super high density near-field optical recording / reproducing system using the Super-RENS method according to the third embodiment of the present invention will be described with reference to FIGS.

  Referring to FIG. 9, in a system according to still another embodiment of the present invention, an electron beam path P and a laser beam path P ′ are different at an incident position on the recording medium 1. That is, the path P and the path P ′ are not on the same axis at the incident position on the recording medium 1. The position of the laser light source 41 may be on the side of the path P ′ using the mirror 43 as in the first embodiment, or may be provided directly above the recording medium 1.

  In recording / reading information, an electron beam is irradiated to a position X on the recording medium 1 where recording or reading of information on the recording medium 1 is desired to form an opening 21 in the mask layer 11. Thereafter, the recording medium 1 is moved by the X-θ stage 51 and the position X on the recording medium 1 is irradiated with the laser beam. That is, the X-θ stage 51 moves so that the position X on the recording medium 1 moves from the electron beam path P to the laser beam path P ′. Near-field light 23 is formed in the vicinity of the opening 21 by the laser beam, and a recording mark 7 ′ is formed in the recording layer 7. Alternatively, reflected light is generated at the recording mark 7 ′ of the recording layer 7.

  During the movement of the X-θ stage 51, the electron beam is not irradiated onto the recording medium 1, and thus the mask layer 11 is rapidly cooled. Therefore, the recording medium 1 must be moved at a high speed before the opening 21 is closed. Therefore, as shown in FIG. 10, the travel distance of the recording medium 1 by the X-θ stage 51 is such that the path P of the electron beam and the path P ′ of the laser beam are incident on the recording medium 1 at an angle. Can also be reduced.

  In addition, as shown in FIG. 11, the section from the electron beam gun 31 to the recording medium 1 is divided into several sections, and the degree of vacuum is changed stepwise to arrange the electron beam under atmospheric pressure. It can also lead to 1. In FIG. 11, a method of exhausting in four stages divided into four sections is illustrated, but the number of exhaust sections is not limited to this. In order to prevent the intensity of the electron beam from decreasing, it is preferable that the path length of the electron beam under atmospheric pressure is short. Therefore, the chamber 39 of the electron beam gun 31 is brought as close as possible to the vicinity of the recording medium 1. In the present embodiment, since the recording medium 1 is disposed in the atmospheric pressure, it is easy to replace the recording medium 1 that desires to record or reproduce information.

  The recording / reading of the signal information is almost the same as the system of the first embodiment except for the movement of the recording medium 1 by the X-θ stage 51, and therefore will not be described in detail here.

It is a conceptual diagram which shows the information recording method by the conventional Super-RENS method. It is sectional drawing which shows the recording medium used for the system by the Example of this invention. It is sectional drawing which shows the other recording medium used for the system by the Example of this invention. 1 illustrates a system according to an embodiment of the present invention. It is a figure which shows the principal part of the system by the Example of this invention. It is a figure which shows the principal part of the system by the Example of this invention. It is a figure which shows the principal part of the system by the other Example of this invention. It is a figure which shows the principal part of the system by the other Example of this invention. It is a figure which shows the principal part of the system by the other Example of this invention. It is a figure which shows the principal part of the system by the other Example of this invention. It is a figure which shows the principal part of the system by other Example of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Recording medium 3 Substrate 5 1st protective layer 7 Recording layer 9 2nd protective layer 11 Mask layer 13 3rd protective layer 21 Opening 23 Near-field light 31 Electron beam gun 33 Blanking plate 35 Diaphragm | plate plate 41 Laser light source 51 X- θ stage 43 Mirror 45 Beam splitter 47 Objective optical lens 49 Detectors 43 ′, 45 ′, 47 ′ Conductor beam path 61 Central processing unit 63 X-θ stage drive controller 65 Electron beam deflection controller 101 Recording medium 103 Protective layer 105 Recording layer 107 mask layer 109 opening 111 scatterer 113 near-field light 115 recording mark

Claims (14)

Light for recording information by guiding the light beam emitted from the light source to the recording layer through the mask layer in the recording medium, or reproducing the information by receiving the light beam reflected by the recording layer with a photodetector A recording / playback method,
Emitting a light beam along an optical axis directed to a recording portion of the recording layer to record and / or reproduce information on the recording layer;
A gate portion that is sized to irradiate a predetermined portion of the mask layer where the optical axes of the light beam intersect with each other by irradiating an electron beam to a predetermined temperature or more and to penetrate the mask layer and not transmit the light beam. Forming an optical recording / reproducing method.   The mask layer has a structure that reversibly changes with a predetermined temperature interposed therebetween, and has a refractive index that is opaque to the light beam at the predetermined temperature or lower and the light beam at the predetermined temperature or higher. 2. The optical recording / reproducing method according to claim 1, wherein the optical recording / reproducing method has a refractive index that is transparent.   2. The optical recording / reproducing method according to claim 1, wherein the light beam forms near-field light in the vicinity of the gate portion, and the near-field light reaches the recording layer. Light for recording information by guiding the light beam emitted from the light source to the recording layer through the mask layer in the recording medium, or reproducing the information by receiving the light beam reflected by the recording layer with a photodetector A recording / playback method,
Irradiating a predetermined portion of the mask layer of the recording medium with an electron beam and heating it to a predetermined temperature or more to form a gate portion that penetrates the mask layer and does not transmit the light beam;
Irradiating the predetermined portion with a light beam, and an optical recording / reproducing method.   The mask layer has a structure that reversibly changes with a predetermined temperature interposed therebetween, and has a refractive index that is opaque to the light beam at the predetermined temperature or lower and the light beam at the predetermined temperature or higher. 5. The recording / reproducing method according to claim 4, wherein the recording / reproducing method has a refractive index that is transparent.   5. The light according to claim 4, wherein the step of irradiating the predetermined portion with the light beam is a step of applying near-field light to the recording portion of the recording layer in order to record and / or reproduce information. Recording and playback method.   5. The optical recording / reproducing method according to claim 4, further comprising a step of moving the gate portion formed in the predetermined portion below the optical axis of the light beam. Light for recording information by guiding the light beam emitted from the light source to the recording layer through the mask layer in the recording medium, or reproducing the information by receiving the light beam reflected by the recording layer with a photodetector A recording / reproducing apparatus,
A laser light source for emitting a light beam along an optical axis directed to a recording portion of the recording layer in order to record and / or reproduce information on the recording layer;
An electron beam source that irradiates a predetermined part of the mask layer where the optical axes of the light beam intersect with each other,
The electron beam source heats a predetermined portion of the mask to a predetermined temperature or more to form a gate portion having a size that penetrates the mask layer and does not transmit the light beam. apparatus.   The mask layer has a structure that reversibly changes with a predetermined temperature interposed therebetween, and has a refractive index that is opaque to the light beam at the predetermined temperature or lower and the light beam at the predetermined temperature or higher. 9. The optical recording / reproducing apparatus according to claim 8, wherein the optical recording / reproducing apparatus has a refractive index that is transparent.   9. The optical recording / reproducing apparatus according to claim 8, wherein the light beam forms near-field light in the vicinity of the gate portion, and the near-field light reaches the recording layer. Light for recording information by guiding the light beam emitted from the light source to the recording layer through the mask layer in the recording medium, or reproducing the information by receiving the light beam reflected by the recording layer with a photodetector A recording / reproducing apparatus,
A laser light source for emitting a light beam along an optical axis directed to a recording portion of the recording layer in order to record and / or reproduce information on the recording layer;
An electron beam source for irradiating the mask layer with an electron beam;
Moving means for moving the recording medium so that the light beam is irradiated to the portion of the mask layer irradiated with the electron beam,
The electron beam source heats the portion of the mask layer to a predetermined temperature or more to form a gate portion having a size that penetrates the mask layer and does not transmit the light beam. Playback device.   12. The optical recording / reproducing apparatus according to claim 11, wherein the recording medium is disposed in the atmosphere, and the electron beam passes through the atmosphere and is applied to the mask layer of the recording medium.   The mask layer has a structure that reversibly changes with a predetermined temperature interposed therebetween, and has a refractive index that is opaque to the light beam at the predetermined temperature or lower and the light beam at the predetermined temperature or higher. 12. The optical recording / reproducing apparatus according to claim 11, wherein the optical recording / reproducing apparatus has a refractive index that is transparent. 12. The optical recording / reproducing apparatus according to claim 11, wherein the light beam forms near-field light in the vicinity of the gate portion, and the near-field light reaches the recording layer.

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