JP2005277861A - Micro resonator, its manufacturing method, and electronic apparatus - Google Patents

Micro resonator, its manufacturing method, and electronic apparatus Download PDF

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JP2005277861A
JP2005277861A JP2004089214A JP2004089214A JP2005277861A JP 2005277861 A JP2005277861 A JP 2005277861A JP 2004089214 A JP2004089214 A JP 2004089214A JP 2004089214 A JP2004089214 A JP 2004089214A JP 2005277861 A JP2005277861 A JP 2005277861A
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resonator
electrode
microresonator
forming
shape
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Takuya Nakajima
卓哉 中島
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Seiko Epson Corp
セイコーエプソン株式会社
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<P>PROBLEM TO BE SOLVED: To provide a micro resonator having a desired pass characteristic over a broad frequency band and to provide its manufacturing method. <P>SOLUTION: The micro resonator 10 is configured to include a plurality of disks 14a to 14c whose resonance frequencies differ from each other, which are located between an electrode 16 having electrode parts 16a to 16c and an electrode 18 having electrode parts 18a to 18c. A micro resonator comprising the electrode part 16a, the disk 14a and the electrode part 18a, a micro resonator comprising the electrode part 16b, the disk 14b and the electrode part 18b, and a micro resonator comprising the electrode part 16c, the disk 14c and the electrode part 18c are connected electrically in parallel. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a microresonator including a resonator that vibrates minutely at a specific resonance frequency, a manufacturing method thereof, and an electronic device including the microresonator.

  In recent years, research and development for manufacturing ultra-compact and ultra-high-performance electronic components using MEMS (Micro Electro Mechanical System) technology has been actively conducted. There are a wide variety of electronic components using MEMS technology, and one type is a microresonator. In the microresonator, for example, an insulating film made of an oxide film is formed on a substrate such as a silicon substrate, and comb teeth of a comb-shaped fixed electrode and comb-shaped movable electrodes (resonators) are formed on the insulating film. Are formed so as to be engaged in parallel with the substrate surface. The comb-shaped movable electrode is coupled to a support portion having a spring property supported on a silicon substrate, and a set of such a comb-shaped fixed electrode and a comb-shaped movable electrode that mesh with each other is formed. One set is arranged on each side of the support portion.

  In the microresonator having such a configuration, an AC voltage is applied to a set of one comb-shaped fixed electrode and a comb-shaped movable electrode, whereby the comb-shaped fixed electrode and the comb-shaped movable electrode are connected to each other. An electrostatic attractive force is generated between them, and the electrostatic attraction force causes the comb-like movable electrode to vibrate by being pushed and pulled in a planar manner in the direction of engagement of the comb teeth (length direction of the comb teeth). This vibration is transmitted to a support portion having a spring property integrated with the comb-shaped movable electrode, and the other comb-shaped movable electrode which is in the meshed state is vibrated planarly.

  Resonance determined by the spring constant determined by the structure of the movable electrode and the mass of the movable electrode and the structure of the spring support, generated between the comb-shaped fixed electrode on the input side and the comb-shaped movable electrode A resonance phenomenon occurs when the frequency matches, and the resonance frequency is taken out from the electrode terminal of the other comb-shaped fixed electrode on the output side. The microresonator having such a configuration is used as an oscillator that oscillates an electric signal having a specific frequency or a filter that filters an electric signal having a specific frequency from an electric signal including a plurality of frequencies.

  In addition to the above configuration, a microresonator having a disk-shaped resonator has been devised. This microresonator includes a disk-shaped resonator and an electrode disposed so as to sandwich the resonator on an insulating film formed on a substrate such as a silicon substrate, and an electric signal is supplied to the electrode. The resonator is resonated by changing its shape (expanding / contracting) by an electric field generated when it is applied. Since the resonance frequency of the microresonator including the comb-shaped fixed electrode and the movable electrode is on the order of several tens of KHz, and the resonance frequency of the microresonator having a disk-shaped resonator is on the order of several hundred MHz, A microresonator having a disk-shaped resonator is suitable for use in a high-frequency circuit.

For details of a microresonator including a comb-shaped fixed electrode and a movable electrode, refer to, for example, the following Patent Documents 1 and 2. For details of a microresonator having a disk-shaped resonator, for example, refer to the following Patent Documents: See 3.
US Pat. No. 5,025,346 US Pat. No. 5,537,083 US Pat. No. 6,628,177

  By the way, the resonance frequency of the microresonator described above is determined by the mass of the movable electrode (strictly, the mass of the movable electrode and the support portion) and the spring constant of the support portion for those having a comb-shaped fixed electrode and a movable electrode. For a resonator having a disk-shaped resonator, it is determined by the mass of the resonator, the effective mass determined by the vibration mode, and the restoring force against the deformation of the resonator. That is, since the resonance frequency is determined by the structure of the microresonator, the resonance frequency cannot be changed significantly after the microresonator is once formed.

  When a microresonator is used as a filter, it has a pass characteristic that allows a single frequency electric signal to pass through, a filter that has a characteristic that allows an electric signal to pass over a wide frequency band, and a specific frequency band from a plurality of frequency bands. There may be cases where a device having various characteristics such as a device having a passing characteristic to be switched and passed is required. For example, a filter provided in a tuner needs to have a pass characteristic that allows a specific frequency to be switched from a plurality of frequency bands. Most filters using a conventional microresonator have a resonance frequency determined by the structure as a passband, have a characteristic of passing an electric signal over a wide frequency band, or have a specific frequency from a plurality of frequency bands. However, it has been difficult to realize a transmission characteristic that allows the band to be switched.

  The present invention has been made in view of the above circumstances, and an object thereof is to provide a microresonator having desired pass characteristics over a wide frequency band, a method for manufacturing the microresonator, and an electronic device including the microresonator.

In order to solve the above problems, a microresonator of the present invention includes a silicon substrate, a stacked portion including at least an insulating film formed on the silicon substrate, and a resonator and an electrode provided on the stacked portion. A microresonator comprising: a plurality of resonators having different resonance frequencies; and a plurality of electrodes provided corresponding to each of the resonators and electrically connected in parallel. .
According to the present invention, since a plurality of resonators having different resonance frequencies and a plurality of electrodes electrically connected in parallel and corresponding to each of the resonators are provided, the electrical signal applied to the electrodes Of these, the resonator resonates at a frequency that matches one of the resonance frequencies of each resonator. For this reason, when the microresonator of the present invention is used as a filter, pass characteristics over a wide frequency band can be obtained. Further, by setting the resonance frequency of each resonator to a desired resonance frequency, it is possible to obtain desired pass characteristics over a wide frequency band.
The microresonator of the present invention is characterized in that the resonator has a circular shape, a beam shape, or a part of a comb shape.
According to the present invention, the shape of the resonator can be formed in a circular shape, a beam shape, or a shape having a comb-tooth shape in part instead of a predetermined fixed shape, so that the frequency band to pass through Accordingly, the shape of the resonator can be set. For example, if the shape of the resonator is set to a shape having a comb-teeth shape, a passing characteristic that allows an electrical signal having a frequency of several tens of KHz to pass is obtained, and if the shape is set to a beam shape, the frequency is set to several MHz to several tens of MHz. A pass characteristic that allows an electric signal to pass through is obtained, and a pass characteristic that allows an electric signal having a frequency of several hundreds of MHz to be passed when set in a circular shape.
The microresonator of the present invention is characterized in that the resonator resonates by causing a position change or a shape change by an electric signal applied to the electrode.
According to this invention, since the resonator is resonated by causing a position change or a shape change of the resonator by an electric signal applied to the electrode, the resonator can be resonated in a plurality of resonance modes at the time of resonance. This is suitable for widening the passband.
Further, the microresonator of the present invention is such that the resonator resonates by causing a shape change by an electric signal applied to the electrode, and is formed at a node position where the shape change of the resonator does not occur. And a support portion for supporting the resonator on the laminated portion.
According to the present invention, since the resonator is supported on the laminated portion by the support portion formed at the position of the node that does not cause the resonator shape change, the resonator is resonated without hindering the resonator shape change. Can be made. Further, the resonance frequency of the resonator is not changed by forming the support portion at the position of the node.
The microresonator of the present invention is characterized in that the resonators have a circular shape with the same thickness and have different diameters.
According to the present invention, each resonator has a circular shape, the same thickness, and different diameters. Therefore, different resonance frequencies of the resonators can be made different. Further, in the inspection process performed when the microresonator is manufactured, since the deviation of the resonance frequency of each resonator can be obtained by measuring the diameter of the resonator, the inspection can be performed quickly and easily.
In order to solve the above problems, a method for manufacturing a microresonator of the present invention includes a silicon substrate, a stacked portion including at least an insulating film formed on the silicon substrate, a resonator provided on the stacked portion, and And a resonator forming step of forming a plurality of resonators having different resonance frequencies on the stacked portion, and corresponding to each of the resonators, and electrically And an electrode forming step of forming a plurality of electrodes connected in parallel.
According to the present invention, a plurality of resonators having different resonance frequencies are formed on the stacked portion formed on the silicon substrate, and electrodes electrically connected in parallel are formed corresponding to the resonators. Therefore, it is possible to manufacture a microresonator having a pass characteristic over a wide frequency band that allows an electric signal having a frequency that matches one of the resonance frequencies of each resonator to pass therethrough. At this time, desired pass characteristics over a wide frequency band can be obtained by setting the resonance frequency of each resonator to a desired resonance frequency.
Further, in the method for manufacturing a microresonator of the present invention, the resonator forming step includes sequentially forming an insulating intermediate film and a conductive conductive film on the stacked portion, and patterning the conductive film. And forming the plurality of resonators on the intermediate film at once.
According to the present invention, after forming the intermediate film and the conductive film on the laminated portion, the conductive film is patterned to form a plurality of resonators on the intermediate film at the same time. The child can be efficiently formed without complicating the manufacturing process. In addition, by forming the resonator by this process, the thickness of the plurality of resonators can be formed to be the same.
In the method of manufacturing a microresonator of the present invention, the resonator forming step is a step of forming the resonator into a circular shape, a beam shape, or a shape having a comb-tooth shape in part. Yes.
According to the present invention, the shape of the resonator can be formed in a circular shape, a beam shape, or a shape having a comb-tooth shape in part instead of a predetermined fixed shape, so that the frequency band to pass through Accordingly, the shape of the resonator can be set. For example, if the shape of the resonator is set to a shape having a comb-teeth shape, a passing characteristic that allows an electrical signal having a frequency of several tens of KHz to pass is obtained, and if the shape is set to a beam shape, the frequency is set to several MHz to several tens of MHz. A pass characteristic that allows an electric signal to pass through is obtained, and a pass characteristic that allows an electric signal having a frequency of several hundreds of MHz to be passed when set in a circular shape.
Further, in the method for manufacturing a microresonator of the present invention, the electrode forming step includes a step of forming an insulating film on the intermediate film on which the plurality of resonators are formed, and an insulating film formed on the intermediate film. Forming a plurality of electrodes by forming a conductive film on the substrate and removing the conductive film on the resonator.
According to this invention, after forming the insulating film on the intermediate film on which the plurality of resonators are formed, the conductive layer is formed on the intermediate film, and the conductive film on the resonator is removed to form the conductive film. Therefore, an electrode corresponding to a plurality of resonators and having a shape corresponding to the shape of the resonator can be efficiently manufactured without complicating the manufacturing process.
In the method for manufacturing a microresonator according to the present invention, after the plurality of electrodes are formed, the insulating film formed on the resonator is removed, and the intermediate film formed on the stacked portion is removed. The method includes a step of forming a support portion for supporting each of the plurality of resonators by removing the remaining portion.
According to the present invention, after forming the plurality of electrodes, the insulating film on the resonator is removed, and the support portion that supports each of the resonators is removed by removing a part of the intermediate film on the stacked portion. Therefore, it is possible to easily form the support portion without complicating the manufacturing process, and to change the position or shape of the resonator by applying an electric signal to the electrode. it can.
In the method for manufacturing a microresonator of the present invention, it is preferable that the step of forming the support portion is a step of forming a support column that supports the central portions of the plurality of resonators.
The method for manufacturing a microresonator according to the present invention is characterized in that the conductive film is formed of polysilicon.
According to the present invention, since the conductive film is formed using the polysilicon for which the processing process has been established, the resonator and the electrode can be accurately and easily formed. In particular, since one of the factors that determine the resonance frequency of the resonator is the mass of the resonator, variation in the resonance frequency of each resonator can be suppressed by accurately forming the resonator.
An electronic apparatus according to the present invention includes any one of the microresonators described above or a microresonator manufactured using any one of the above-described microresonator manufacturing methods.
According to the present invention, since a microresonator having a desired wide pass wave number band can be formed on a silicon substrate using a technique for manufacturing a semiconductor element, a filter using the microresonator is integrated in a semiconductor chip. can do. As a result, for example, an ultra-small and ultra-high performance semiconductor element such as a semiconductor element in which a receiving circuit including an oscillator, a filter, an amplifier, a mixer, a detector, and the like is integrated into one chip is provided.

  Hereinafter, a microresonator, a manufacturing method thereof, and an electronic device according to embodiments of the present invention will be described in detail with reference to the drawings.

[Micro Resonator]
FIG. 1 is a plan view showing a microresonator according to an embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line AA in FIG. The microresonator 10 shown in FIGS. 1 and 2 is configured as a filter that functions in the same manner as a transversal SAW (Surface Acoustic Wave) filter. In the following description, if necessary, an XYZ orthogonal coordinate system is set in the drawing, and the positional relationship of each member will be described with reference to this XYZ orthogonal coordinate system. The XYZ orthogonal coordinate system in FIGS. 1 and 2 is set so that the X axis and the Y axis are parallel to the surface of the silicon substrate 12, and the Z axis is set in a direction orthogonal to the surface of the silicon substrate 12. Has been.

  A microresonator 10 shown in FIG. 1 has a plurality of disks 14a to 14c as resonators arranged on a silicon substrate 12 with a predetermined interval in the Y direction, and an electrode 16 in the -X direction of the disks 14a to 14c. The electrodes 18 are arranged in the + X direction, and the disks 14a to 14c are sandwiched between the electrodes 16 and 18. The disks 14a to 14c and the electrodes 16 and 18 are formed using, for example, a polysilicon (p-SiO) film as a conductive layer formed on the silicon substrate 12. Alternatively, it is formed using a silicon layer crystallized on an insulating film of an SOI (Silicon On Insulator) substrate.

  Each of the disks 14a to 14c is formed in a circular shape, and the diameter of the disk 14a is the largest, then the disk 14b is the largest, and the disk 14c is the smallest. Moreover, these discs 14a-14c are formed in the same thickness. The disks 14a to 14c are changed in shape (expanded / contracted) due to an electric field formed by an electric signal applied between the electrode 16 and an electrode 24 described later or between the electrode 18 and an electrode 24 described later. Resonance occurs when a specific frequency component is included in the electrical signal.

  The resonance frequency of each of the disks 14a to 14c is determined by the mass, the effective mass determined by the vibration mode, and the restoring force against the deformation of the disk. As described above, since the disks 14a to 14c have the same thickness and are similar, the resonance frequencies of the disks 14a to 14c can be set according to the diameter. As shown in FIG. 1, in the present embodiment, since the diameters of the disks 14a to 14c are set to different diameters, the disks 14a to 14c have different resonance frequencies.

  In the example shown in FIG. 1, since the disk 14a has the largest diameter (the largest mass), the resonance frequency of the disk 14a is the lowest value among the disks 14a to 14c. Further, since the disk 14a has the smallest diameter (the smallest mass), the resonance frequency of the disk 14c is the highest value among the disks 14a to 14c. The resonance frequencies of the disks 14a to 14c are 120 MHz, 240 MHz, and 430 MHz, respectively. The numerical values given here are merely examples, and can be set to an arbitrary resonance frequency by changing the thickness, diameter, and material of the disks 14a to 14c.

  The electrode 16 includes electrode portions 16a to 16c corresponding to the disks 14a to 14c, respectively. These electrode parts 16a-16c are the shape extended in the X direction, Comprising: The front-end | tip part in + X direction is formed in the concave shape according to the outer periphery shape of disk 14a-14c. Each electrode part 16a-16c is arrange | positioned with the predetermined clearance gap between the front-end | tip parts with respect to each of disk 14a-14c. The electrode 16 having such a configuration is electrically connected to the electrode terminal 20.

  Similarly to the electrode 16, the electrode 18 includes electrode portions 18 a to 18 c corresponding to the disks 14 a to 14 c. These electrode portions 18a to 18c have a shape extending in the X direction in the same manner as the electrode portions 16a to 16c, and the tip end portions in the -X direction are formed in a concave shape in accordance with the outer peripheral shape of the disks 14a to 14c. ing. Each electrode part 18a-18c is arrange | positioned with the predetermined clearance gap between the front-end | tip parts with respect to each of disk 14a-14c. The electrode 18 having such a configuration is connected to the electrode terminal 22. The electrode terminals 20 and 22 are terminals to which an external electric signal is supplied.

  Since the electrode parts 16a to 16c described above are formed as a part of the electrode part 16, the electrode parts 16a to 16c are electrically connected. Moreover, since the electrode parts 18a-18c are formed as a part of electrode part 18, each electrode part 18a-18c is electrically connected. Therefore, the microresonator 10 of the present embodiment includes the microresonator including the electrode portion 16a, the disk 14a, and the electrode portion 18a, the microresonator including the electrode portion 16b, the disk 14b, and the electrode portion 18b, and the electrode portion 16c and the disk. 14c and the microresonator which consists of the electrode part 18c are the structures electrically connected in parallel. An electrode 24 is formed on the silicon substrate 12 below each disk 14a-14c (-Z direction) as a ground electrode that is electrically connected to each of the disks 14a-14c and extends in the Y direction. The electrode 24 is connected to the electrode terminal 26.

  As shown in FIG. 2, the electrode 24 is formed on the insulating film 30 on the silicon substrate 12, and the disk 14 b is formed on the electrode 24. A cylindrical support portion 15b is formed at the bottom of the disk 14b. The disk 14b is supported on the electrode 24 from the back surface (the surface facing the insulating film 30) by the support portion 15b. Although not shown, support portions similar to the support portion 15b are formed on the back surfaces of the disks 14a and 14c, and the disks 14a and 14c are supported on the electrode 24 by these support portions. Yes.

  Since the microresonator 10 of this embodiment is configured to resonate by causing a change in shape (expansion / contraction) of the disk 14b itself, it is not possible to fix a portion where a large change in shape occurs. Here, the shape change at the time of resonance of the disk 14b will be described. FIG. 3 is a diagram showing an example of the shape change of the disk 14b that occurs at the time of resonance. As shown in FIG. 3, the resonator 14b undergoes a shape change that expands and contracts in the longitudinal direction (X direction) of the electrode portions 16b and 18b. When a pulling force toward at least one of the electrode portions 16b and 18b is applied to the disk 14b, the disk 14b extends in the X direction as shown in FIG. When the restoring force against the pulling force acts on the disk 14b, the disk 14b contracts in the X direction as shown in FIG. Therefore, although the shape change in the peripheral part of the disk 14b (particularly in the vicinity of the electrodes 16b and 18b) is large, the central part of the disk 14b is a node that hardly changes in shape. For this reason, the support part 15b is formed so that the center part in the back surface of the disk 14b may be supported. Similarly, for the disks 14a and 14c, a support portion is formed so as to support the center portion on the back surface.

  The disks 14a to 14c are supported in a state of being lifted above (+ Z direction) above the electrode 24 formed on the insulating film 30 on the silicon substrate 12 by the support portion 15b and the like. The flying height of the disks 14a to 14c, that is, the height of the support portion 24 is about several μm. In FIG. 2, the layers 32 and 34 between the electrodes 16 and 18 formed of polysilicon or the like and the insulating film 30 are the first intermediate film and the second intermediate film provided in the step of forming the electrodes 16 and 18. It is a membrane.

  When the microresonator 10 having the above-described configuration is used as an oscillator, for example, an AC voltage is applied between the electrode terminal 20 connected to the electrode 16 and the electrode terminal 26 connected to the electrode 24 as a ground electrode. To do. When an AC voltage is applied between these electrode terminals, electrostatic attraction is generated between the disk 14a and the electrode part 16a, between the disk 14b and the electrode part 16b, and between the disk 14c and the electrode part 16c. . As a result, the disks 14a to 14c undergo a shape change that expands and contracts in the X direction.

  When the vibration due to the expansion and contraction of each of the disks 14a to 14c reaches the natural frequency of each of the disks 14a to 14c, the disks 14a to 14c resonate at that frequency. When the disks 14a to 14c resonate, an electric signal having an oscillation frequency corresponding to the natural frequency is output from the electrode terminal 22 connected to the electrode portions 18a to 18c. Here, since the resonance frequencies of the disks 14a to 14c are different from each other in the present embodiment, an electrical signal having a plurality of transmission frequencies is output from the electrode terminal 22.

The micro Resonators 10 when used as a filter, as shown in FIG. 4, the passing characteristic having a passband width W a around the natural frequency f a of the disk 14a, the natural frequency f b of the disk 14b a filter having a passing characteristic having a passband width W b centered, the passage characteristic of the passband width W of the pass characteristics were synthesized with a pass bandwidth W c around the natural frequency f c of the disk 14c the Used as FIG. 4 is a diagram illustrating an example of pass characteristics when the microresonator 10 is used as a filter. When the microresonator 10 is used as a filter, an AC voltage is applied between the electrode terminal 20 and the electrode terminal 26.

  If the frequency of the alternating voltage applied between these electrode terminals is a frequency included in the passband width W shown in FIG. 4, at least one of the disks 14a to 14c resonates, and an electric signal having that frequency is an electrode. Output from terminal 22. On the other hand, when an AC voltage having a frequency not included in the passband width W is input, all of the disks 14a to 14c do not resonate. As a result, that frequency is removed. With this operation, the microresonator 10 is used as a filter.

  The microresonator 10 according to the embodiment of the present invention described above includes a plurality of disks 14a to 14c having different resonance frequencies, and a plurality of electrode portions 16a to 16c electrically connected in parallel and corresponding to the disks 14a to 14c, respectively. Since the electrodes 16 and 18 having 16c and 18a to 18c are provided, the disks 14a to 14c have a frequency that matches one of the resonance frequencies of the disks 14a to 14c among the electric signals applied to the electrodes 16, for example. Resonates. For this reason, a filter having desired pass characteristics over a wide frequency band can be used.

[Manufacturing Method of Micro Resonator]
5 to 7 are process diagrams showing a method for manufacturing a microresonator according to an embodiment of the present invention. 5 to 7 show cross sections along the line AA in FIG. 1, and the same members as those shown in FIGS. 1 to 3 are denoted by the same reference numerals. It is. First, as shown in FIG. 5A, an insulating film 30 composed of an oxide film (SiO 2 ) and a nitride film (Si 3 N 4 ) is formed on the entire surface of the silicon substrate 12, and then on the entire surface of the insulating film 30. A step of forming a polysilicon (p-SiO) film 32 having a thickness of about 0.5 μm is performed. The silicon substrate 12 is polished on both sides and has a thickness of about 500 μm. The insulating film 30 is formed by using a low pressure vapor phase growth (low pressure CVD (Chemical Vapor Deposition)) method, and its thickness is about 0.1 μm.

  When the formation of the insulating film 30 and the polysilicon film 32 on the silicon substrate 12 is completed, a photoresist (not shown) is applied over the entire upper surface of the polysilicon film 32, and the photoresist is subjected to exposure processing and Development processing is performed to form a resist pattern having a predetermined shape. Next, the polysilicon film 32 is etched using this resist pattern as a mask. When the etching process is completed and the resist pattern formed on the polysilicon film 32 is peeled off, an electrode 24 as a ground electrode is formed on the insulating film 30 as shown in FIG.

When the formation of the electrode 24 is completed, as shown in FIG. 5C, a step of forming a first intermediate film over the entire surface of the insulating film 30 on which the electrode 24 is formed is performed. The first intermediate film 34 includes an oxide film (SiO 2 ), for example, and is formed using a low pressure CVD method. The thickness of the first intermediate film 34 is set to about several μm. When the first intermediate film 34 is formed, a photoresist (not shown) is applied over the entire upper surface of the first intermediate film 34, and the photoresist is subjected to exposure processing and development processing to form a resist pattern having a predetermined shape. Form. Next, the first intermediate film 34 is etched using this resist pattern as a mask, and a part of the first intermediate film 34 formed on the electrode 24 is removed to form an opening H1. The sectional shape of the opening H1 is, for example, a circular shape. After the opening H1 is formed, the resist pattern formed on the first intermediate film 34 is peeled off.

  When the above steps are completed, as shown in FIG. 6A, a step of forming a polysilicon film 36 over the entire surface of the first intermediate film 34 in which the opening H1 is formed is performed. By forming the polysilicon film 36 over the entire surface of the first intermediate film 34, the opening H1 formed in the first intermediate film 34 is filled with polysilicon. Here, the thickness of the polysilicon film 36 is set according to the resonance frequency of the disks 14a to 14c, and is set to about several μm to several tens of μm, for example.

  When the polysilicon film 36 is formed, a photoresist (not shown) is applied over the entire upper surface of the polysilicon film 36, and exposure processing and development processing are performed on the photoresist to form a resist pattern having a predetermined shape. To do. Next, etching is performed on the polysilicon using this resist pattern as a mask, and the resist pattern on the polysilicon film 36 is peeled off, whereby a disk 14b is formed as shown in FIG. 6B. In this step, the disks 14a and 14c are simultaneously formed together with the disk 14b. As described above, the polysilicon film 36 is formed over the entire surface of the first intermediate film 24 in a single process, and the disks 14a to 14c are also formed in a single process. They are formed to the same thickness.

When the disks 14a to 14c are formed, a step of forming the second intermediate film 36 on the disks 14a to 14c and the first intermediate film 34 is performed as shown in FIG. The second intermediate film 36 includes, for example, an oxide film (SiO 2 ) and is formed using a low pressure CVD method. The second intermediate film 36 may be formed by oxidizing the surfaces of the disks 14a to 14c.

  Next, as shown in FIG. 7A, a step of forming a polysilicon film 38 over the entire upper surface of the second intermediate film 36 is performed. Here, the thickness of the polysilicon film 38 is set to about several μm to several tens of μm, which is the same as the thickness of the disks 14a to 14c. When the polysilicon film 38 is formed, a photoresist (not shown) is applied over the entire upper surface of the polysilicon film 38, and a resist pattern having a predetermined shape is formed by performing exposure processing and development processing on the photoresist. To do.

  Next, the polysilicon film 38 is etched using this resist pattern as a mask to form the electrode 16 having the electrode portions 16a to 16c and the electrode 18 having the electrode portions 18a to 18c. In this step, almost all of the silicon film 38 formed on the disk 14b (14a, 14b) is removed, and an opening H2 having a circular cross section is formed as shown in FIG. 7B. After the opening H2 is formed, the resist pattern formed on the polysilicon film 38 is peeled off.

  When the above steps are completed, the second intermediate film 36 covering the disk 14b (14a, 14c) is removed from the opening H2 formed in the polysilicon film 38 by etching, and the disk 14b (14a, 14c), the electrode 24, A step of removing the first intermediate film 34 formed between the two by etching is performed. By passing through this process, as shown in FIG.7 (c), the disk 14b currently supported by the support part 15b on the electrode 24 can be formed. In this step, the disks 14a and 14c supported on the electrode 24 by the support portion similar to the support portion 15b can be formed.

  As described above, in the present embodiment, the disks 14a to 14c having different resonance frequencies are formed, and are electrically connected in parallel with the electrode 16 including the electrode portions 16a to 16c electrically connected in parallel. The microresonator 10 is manufactured by forming the electrode 18 including the electrode portions 18a to 18c. Therefore, it is possible to manufacture the microresonator 10 having a pass characteristic over a wide frequency band that allows an electric signal having a frequency that matches one of the resonance frequencies of the wide disks 14a to 14c to pass therethrough.

  In addition, after the polysilicon film 36 is formed on the first intermediate film 34, the polysilicon film 36 is patterned to form the disks 14a to 14c at a time, so that a plurality of disks 14a to 14c having different resonance frequencies are formed. Can be efficiently formed without complicating the manufacturing process. Further, by forming the disks 14a to 14c by this process, the disks 14a to 14c can be formed to have the same thickness.

[Micro Resonator According to Other Embodiment]
FIG. 8 is a plan view showing a microresonator according to another embodiment of the present invention. The microresonator 40 shown in FIG. 8 is configured as a filter that functions in the same manner as a transversal SAW filter, as in the above embodiment. Also in this embodiment, if necessary, an XYZ rectangular coordinate system is set in the drawing, and the positional relationship of each member will be described with reference to this XYZ rectangular coordinate system.

  A microresonator 40 shown in FIG. 8 has a configuration in which microresonators 44 a to 44 c having different resonance frequencies are electrically connected in parallel on a silicon substrate 42. The micro-resonators 44a to 44c are a transmission side IDT (Inter Digital Transducer) composed of a comb-shaped fixed electrode and a comb-shaped movable electrode, and a receiving side composed of a comb-shaped fixed electrode and a comb-shaped movable electrode. Each IDT is provided, each transmitting side IDT is connected to the electrode 46, and each receiving side IDT is connected to the electrode 48. An electrode terminal 52 is connected to the electrode 46, and an electrode terminal 52 is connected to the electrode 48. An electrode 54 as a ground electrode common to the micro-resonators 44a to 44c is formed on the silicon substrate 42, and an electrode terminal 56 is connected to the electrode 54.

  Next, a specific configuration of the microresonators 44a to 44c will be described by taking the microresonator 44b as an example. FIG. 9 is a plan view showing a microresonator 44b that is a part of a microresonator 40 according to another embodiment of the present invention, and FIG. 10 is taken along the line BB in FIGS. FIG. The micro-resonator 44b arranges the transmitting side IDT 60 and the receiving side IDT 70 along the X direction on the insulating film 43 including the oxide film formed on the surface of the silicon substrate 42, and arranges the resonator 80 therebetween. This is the configuration. The transmission-side IDT 60, the reception-side IDT 70, and the resonator 80 are formed by using, for example, a polysilicon (p-SiO) film as a conductive layer formed on the silicon substrate 42. Alternatively, it is formed using a silicon layer crystallized on an insulating film of an SOI (Silicon On Insulator) substrate.

  The transmission-side IDT 60 includes a fixed electrode 62 having a comb tooth portion 61 and a movable electrode 64 having a comb tooth portion 63. The fixed electrode 62 of the transmission side IDT 60 is connected to the electrode terminal 50 via a lead wire 65. Similarly, the reception-side IDT 70 includes a fixed electrode 72 having a comb tooth portion 71 and a movable electrode 74 having a comb tooth portion 73. The fixed electrode 72 of the receiving side IDT 70 is connected to the electrode terminal 52 via a lead wire 75.

  The movable electrode 64 and the movable electrode 74 are connected by a connecting beam 81 extending in the X direction. The resonator 80 includes the connection beam 81, movable electrodes 64 and 74, and a beam portion 82 formed of a rectangular frame described later. The resonator 80 is configured so that the comb tooth portion 63 of the movable electrode 64 connected to the end portion of the connection beam 81 in the −X direction meshes with the comb tooth portion 61 of the fixed electrode 62 in a plane and + X of the connection beam 81. The comb tooth portion 73 of the movable electrode 74 connected to the end in the direction is disposed between the fixed electrode 62 and the fixed electrode 72 so as to mesh with the comb tooth portion 71 of the fixed electrode 72 in a plane.

  In addition, the comb tooth portion 61 of the fixed electrode 62 and the comb tooth portion 63 of the movable electrode 64 each have a plurality of comb teeth meshing in parallel with the surface of the silicon substrate 42 with a gap (comb tooth gap) on a predetermined plane. ing. Similarly, each of the comb teeth 71 of the fixed electrode 72 and the comb teeth 73 of the movable electrode 74 has a plurality of comb teeth meshing in parallel with the surface of the silicon substrate 42 with gaps on a predetermined plane. Since the movable electrode 64 having the comb-tooth portion 63 and the movable electrode 74 having the comb-tooth portion 73 are provided in the resonator 80, vibrations in the longitudinal direction of the comb-tooth portions 63 and 73, or twist or rotation of the resonator 80. This is suitable for widening the setting range of the resonance frequency. Of course, with such a configuration, a single resonance frequency can be obtained.

  The frame-shaped beam portion 82 formed integrally with the movable electrodes 64 and 74 is supported by a cantilever beam 83 coupled to the beam portion 82, and the support portion 84 of the cantilever beam 83 is a silicon substrate. The structure is fixed on 42. Since the support portion 84 is electrically connected to the electrode terminal 56 serving as a ground electrode, the potential of the resonator 80 is almost equal to the ground potential. The outer shape of the beam portion 82 is not particularly limited to a square shape, and can be set to an arbitrary shape such as a circular shape, an oval shape, or a spindle shape.

  As shown in FIG. 10, the coupling beam 81 is supported in a state where it floats in parallel to the substrate surface above the surface of the insulating film 43 of the silicon substrate 42 (+ Z direction). Accordingly, the comb-like movable electrodes 64 and 74 connected to both ends of the connection beam 81 are also arranged in a state of floating in parallel to the substrate surface. Further, the comb-shaped fixed electrodes 62 and 72 that mesh with the movable electrodes 64 and 74 are also supported in a state where the comb-shaped portions are lifted in parallel to the substrate surface.

  The flying height of the movable electrodes 64 and 74 and the fixed electrodes 62 and 72, that is, the distance from the insulating film 43 formed on the silicon substrate 42 is about 2 to 3 μm. In FIG. 10, the electrode terminals 50 and 52 and the layer 45 between the lead wires 65 and 75 and the insulating film 43 formed of polysilicon or the like are composed of comb-like fixed electrodes 62 and 72 and movable electrodes 64, 74 is a sacrificial layer provided in a manufacturing process when forming a comb tooth portion with 74 in a configuration that floats parallel to the substrate surface. The micro-resonators 44a and 44c have the same configuration as the micro-resonator 44b.

  When the microresonator 40 having the above-described configuration is used as an oscillator, for example, an AC voltage is applied between the electrode terminal 50 of the comb-like fixed electrode 62 and the electrode terminal 54 as the ground electrode. When an AC voltage is applied between these electrode terminals, an electrostatic attractive force is generated between the comb teeth 61 of the fixed electrode 62 and the comb teeth 63 of the movable electrode 64 provided in each of the micro-resonators 44a to 44c. As a result, the movable electrode 64 is pulled and vibrated through the beam portion 82 having a spring property in the meshing direction of the comb teeth (the length direction of the comb teeth, that is, the X direction). This vibration is transmitted to a beam portion 82 having a spring property integrated with the movable electrode 64, and the movable electrode 74 having the comb tooth portion 73 in mesh with the comb tooth portion 71 of the fixed electrode 72 similarly to the other is X. Vibrate in the direction.

  When the vibration generated between the comb-shaped fixed electrode 62 on the input side and the movable electrode 64 reaches the natural frequency of the resonator 80, the resonator 80 resonates at that frequency. When the resonator 80 resonates, an electric signal having an oscillation frequency corresponding to the natural frequency is output from the electrode terminal 52 connected to the fixed electrode 72 having the other comb tooth portion 71. The oscillation frequency (resonance frequency) is determined by the mass of the resonator 80 including the movable electrodes 64 and 74 and the restoring force against the displacement determined by the spring constant of the beam portion 82 (elastic force of the beam portion 82).

Here, when the mass of the resonator 80 is m and the spring constant of the beam portion 82 is k, the oscillation frequency f 0 of the electric signal output from the fixed electrode 72 is expressed by the following equation (1).
f 0 = (1 / (2 · π)) · (k / m) 1/2 (1)
When the microresonator 44b shown in FIG. 9 is used as an oscillator, design target values of the oscillation frequency are set to 16 kHz for the microresonator 44c, 32 kHz for the microresonator 44b, 72 kHz for the microresonator 44a, and the like. The

  When the microresonator 40 is used as a filter, it is used as a filter having a pass characteristic obtained by synthesizing the pass characteristics of the microresonators 44a to 44c, similarly to the pass characteristic shown in FIG. When the microresonator 40 is used as a filter, an AC voltage is applied between the electrode terminal 50 and the electrode terminal 54. If the frequency of the alternating voltage applied between these electrode terminals is a frequency included in the pass bandwidth of the microresonator 40, at least one resonator 80 of the microresonators 44a to 44c vibrates in the X direction by electrostatic force. Then, an electrical signal having that frequency is output from the electrode terminal 52. On the other hand, when an AC voltage having a frequency not included in the pass bandwidth of the microresonator 40 is input, none of the resonators 80 of the microresonators 44a to 44c resonate. As a result, that frequency is removed. With such an operation, the microresonator 40 is used as a filter having a wide pass bandwidth.

[Manufacturing Method of Micro Resonator According to Other Embodiment]
11 and 12 are process diagrams showing a method of manufacturing a microresonator according to another embodiment of the present invention. 11 and 12 show cross sections along the line BB in FIGS. 8 and 9, and the same members as those shown in FIGS. The code | symbol is attached | subjected. First, as shown in FIG. 11A, an oxide film 43a made of silicon dioxide (SiO 2 ) is formed on a silicon substrate. The silicon substrate 42 is polished on both sides and has a thickness of about 500 μm. The oxide film 43a is formed by using a low pressure vapor phase growth (low pressure CVD (Chemical Vapor Deposition)) method, and its thickness is about 0.1 μm.

Next, a nitride film (Si 3 N 4 ) 43b having a thickness of about 0.5 μm is formed on the oxide film 43a. The nitride film 43b is also formed by using a low pressure CVD method. The insulating film 43 shown in FIG. 10 is formed from the oxide film 43a and the nitride film 43b. After forming the nitride film 43b, a step of forming a sacrificial layer 45 made of SiO 2 and having a thickness of about 2 μm is performed on the nitride film 43b.

  When the above steps are completed, a photoresist (not shown) is applied over the entire upper surface of the sacrificial layer 45, and an exposure process and a development process are performed on the photoresist to form a resist pattern having a predetermined shape. Next, by performing an etching process on the sacrificial layer 45 using this resist pattern as a mask, as shown in FIG. 11B, the portions to be the fixed electrodes 62 and 72 of the microresonators 44 a to 44 c and the support portion 84. The sacrificial layer 45 is removed at the place (see FIG. 9).

  When the etching process is completed and the resist pattern formed on the sacrificial layer 45 is peeled off, the thickness over the entire surface of the sacrificial layer 45 and the exposed nitride film 43b is increased as shown in FIG. A step of forming a polysilicon (p-SiO) film 60 as a conductive layer of about 2.0 μm is performed. When the polysilicon film 47 is formed, a photoresist (not shown) is applied on the polysilicon film 47, and an exposure process and a development process are performed on the photoresist to form a resist pattern having a predetermined shape.

  When the resist pattern is formed, the polysilicon film 47 is etched, and finally the fixed electrodes 62 and 72 of the micro-resonators 44a to 44c, the resonator 80 (the coupled beam 81, the movable electrodes 64 and 74, and the beam portion). 82), the cantilever 83, and the portions that should become the electrode terminals 50, 52, and 56 and the lead wires 65 and 75, and the other portions are removed. When the etching process is completed and the resist pattern formed on the polysilicon film 47 is removed, the state shown in FIG.

  When the above steps are completed, the comb tooth portion 61 of the fixed electrode 62, the comb tooth portion 71 of the fixed electrode 72, the resonator 80 (movable electrodes 64 and 74, the connecting beam 81, and the beam portion 82), and the cantilever 83. The sacrificial layer 45 below is removed by etching. Such etching is possible by controlling the etching time. By performing such etching, each of the micro-resonators 44a to 44c, as shown in FIG. 12 (b), is in a state of being floated on the silicon substrate 42 (on the nitride film 43b) with an interval of about 2 to 3 μm. 80 can be formed.

  The microresonator and the manufacturing method thereof according to the embodiment of the present invention have been described above. However, the present invention is not limited to the above embodiment, and can be freely changed within the scope of the present invention. For example, the microresonator 10 shown in FIG. 1 includes circular disks 14 a to 14 c as resonators, and the microresonator 40 shown in FIG. 8 includes a resonator including comb-shaped movable electrodes 64 and 74. However, in the present invention, the resonator is not limited to the above shape, and may have any shape. For example, a beam-shaped resonator may be provided.

  In the above embodiment, the case where the masses of the disks 14a to 14c are made different, or the masses of the resonators 80 included in each of the microresonators 44a to 44c are made different, and the resonance frequencies are made different from each other has been described as an example. . However, a plurality of resonators having the same mass may be provided and the resonance frequencies may be made different from each other by changing the vibration modes. In the case of the disks 14a to 14c, if the vibration mode is different, the position of the node may appear at a different position. Therefore, the position of the support portion that supports the disks 14a to 14c may be set in accordance with the position of the node.

〔Electronics〕
FIG. 13 is a perspective view showing an appearance of a mobile phone as an electronic apparatus according to an embodiment of the present invention. A cellular phone 100 shown in FIG. 13 includes an antenna 101, a receiver 102, a transmitter 103, a liquid crystal display unit 104, an operation button unit 105, and the like. FIG. 14 is a block diagram showing an electrical configuration of an electronic circuit provided in the mobile phone 100 shown in FIG.

  The electronic circuit shown in FIG. 14 shows a basic configuration of an electronic circuit provided in the mobile phone 100, and includes a transmitter 110, a transmission signal processing circuit 111, a transmission mixer 112, a transmission filter 113, a transmission power amplifier 114, and a transmission / reception amount. It includes a wave filter 115, antennas 116a and 116b, a low noise amplifier 117, a reception filter 118, a reception mixer 119, a reception signal processing circuit 120, a receiver 121, a frequency synthesizer 122, a control circuit 123, and an input / display circuit 124. The In addition, since the cellular phone currently in practical use performs frequency conversion processing a plurality of times, its circuit configuration is more complicated.

  The transmitter 110 is realized by, for example, a microphone that converts sound waves into an electrical signal, and corresponds to the transmitter 103 in FIG. The transmission signal processing circuit 111 is a circuit that performs processing such as D / A conversion processing and modulation processing on the electrical signal output from the transmitter 110. The transmission mixer 112 uses the signal output from the frequency synthesizer 122 to mix the signal output from the transmission signal processing circuit 111. The frequency of the signal supplied to the transmission mixer 112 is, for example, about 380 MHz. The transmission filter 113 passes only a signal having a frequency that requires an intermediate frequency (IF) and cuts a signal having an unnecessary frequency. The signal output from the transmission filter 113 is converted into an RF signal by a conversion circuit (not shown). The frequency of this RF signal is, for example, about 1.9 GHz. Transmission power amplifier 114 amplifies the power of the RF signal output from transmission filter 113 and outputs the amplified signal to transmission / reception demultiplexer 115.

  The transmitter / receiver demultiplexer 115 outputs the RF signal output from the transmission power amplifier 114 to the antennas 116a and 116b, and transmits the RF signal from the antennas 116a and 116b in the form of radio waves. Further, the transmitter / receiver demultiplexer 115 demultiplexes the received signals received by the antennas 116 a and 116 b and outputs the demultiplexed signals to the low noise amplifier 117. The frequency of the reception signal output from the transmission / reception duplexer 115 is, for example, about 2.1 GHz. The low noise amplification 117 amplifies the reception signal from the transmission / reception duplexer 115. The signal output from the low noise amplifier 117 is converted into an intermediate signal (IF) by a conversion circuit (not shown).

  The reception filter 118 passes only a signal having a required frequency of an intermediate frequency (IF) converted by a conversion circuit (not shown), and cuts a signal having an unnecessary frequency. The reception mixer 119 mixes the signal output from the transmission signal processing circuit 111 using the signal output from the frequency synthesizer 122. The intermediate frequency supplied to the reception mixer 119 is about 190 MHz, for example. The reception signal processing circuit 120 is a circuit that performs processing such as A / D conversion processing and demodulation processing on the signal output from the reception mixer 119. The receiver 121 is realized by, for example, a small speaker that converts an electric signal into a sound wave, and corresponds to the receiver 102 in FIG.

  The frequency synthesizer 122 is a circuit that generates a signal to be supplied to the transmission mixer 112 (for example, a frequency of about 380 MHz) and a signal to be supplied to the reception mixer 119 (for example, a frequency of 190 MHz). The frequency synthesizer 122 includes a PLL circuit that oscillates at an oscillation frequency of 760 MHz, for example, divides the signal output from the PLL circuit to generate a signal having a frequency of 380 MHz, and further divides the frequency to 190 MHz. Generate a signal. The control circuit 123 controls the overall operation of the mobile phone by controlling the transmission signal processing circuit 111, the reception signal processing circuit 120, the frequency synthesizer 122, and the input / display circuit 124. The input / display circuit 124 is for displaying the state of the device to the user of the mobile phone 100 and inputting an instruction of the operator. For example, the liquid crystal display unit 104 and the operation button unit shown in FIG. This corresponds to 105.

  In the electronic circuit having the above configuration, the above-described microresonator is used as the transmission filter 113 and the reception filter 118. The frequencies filtered by the transmission filter 113 and the reception filter 118 (frequency bands to be passed) are transmitted according to the required frequency in the signal output from the transmission mixer 112 and the frequency required by the reception mixer 119. These are set individually for the filter 113 and the reception filter 118.

  The bandwidth used by wireless devices such as mobile phones is limited, and a continuous frequency band is not always assigned. Therefore, when the communication capacity within the already allocated frequency range exceeds the allowable amount, the communication capacity is increased by shifting to another frequency band (non-continuous frequency band). In order to maintain convenience, mobile phones have been provided with a plurality of detection circuits corresponding to a plurality of frequency bands.

  Since the conventional parts corresponding to the transmission filter 113 and the reception filter 118 forming a part of the detection circuit could not be integrated with the reception mixer 119 and the like, they are separated from the integrated reception mixer 119 and the like. The detector mounted on the substrate and corresponding to a plurality of frequency bands is provided with a detection circuit for each frequency band separately from the reception mixer 119. On the other hand, if the microresonator of this embodiment is provided, since it has pass characteristics over different frequency bands (wide frequency bands) and can be integrated together with the reception mixer 119 and the like, the cellular phone 100 can be greatly reduced in size and weight.

  FIG. 15 is a perspective view showing an appearance of a wristwatch as an electronic apparatus according to another embodiment of the present invention. A wristwatch 200 shown in FIG. 15 includes the above-described microresonators 10 and 40 as an oscillator. The oscillation frequencies of the microresonators 10 and 40 are set to a plurality of frequencies such as 16 kHz, 32 kHz, and 72 kHz, for example. Currently, wristwatches that are generally provided include a quartz (crystal) oscillator as an oscillator. However, by using the microresonator 10 as an oscillator, the wristwatch 200 can be further reduced in size and weight. Further, since the microresonator of the present embodiment oscillates at a plurality of different frequencies, when a circuit that requires a plurality of different frequencies is provided, there is an advantage that a necessary frequency can be supplied to each circuit. .

  The microresonator, the manufacturing method thereof, and the electronic device according to the embodiment of the present invention have been described above. However, the present invention is not limited to the above embodiment, and can be freely changed within the scope of the present invention. For example, in the above-described embodiment, a mobile phone and a wristwatch have been described as examples of electronic devices. However, the electronic device of the present invention is not limited to a mobile phone and a wristwatch, and includes various electronic devices such as a computer having a timekeeping function, a radio timepiece, a digital camera, and various home appliances.

  Further, not only electronic devices having portability such as mobile phones but also communication devices used in a stationary state such as tuners that receive BS broadcasts and CS broadcasts are included. Furthermore, not only communication devices that use radio waves propagating in the air as communication carriers, but also electronic devices such as HUBs that use high-frequency signals propagating in coaxial cables or optical signals propagating in optical cables. In these electronic devices, a microresonator is used for filtering a predetermined frequency and for realizing a clocking function.

It is a top view which shows the microresonator by one Embodiment of this invention. It is a cross-sectional arrow view along the AA line in FIG. It is a figure which shows an example of the shape change of the disk 14b which arises at the time of resonance. It is a figure which shows an example of the passage characteristic in the case of using the microresonator 10 as a filter. It is process drawing which shows the manufacturing method of the microresonator by one Embodiment of this invention. It is process drawing which shows the manufacturing method of the microresonator by one Embodiment of this invention. It is process drawing which shows the manufacturing method of the microresonator by one Embodiment of this invention. It is a top view which shows the microresonator by other embodiment of this invention. It is the top view which extracted and showed the microresonator 44b which makes a part of microresonator 40 by other embodiment of this invention. FIG. 10 is a cross-sectional arrow view taken along the line BB in FIGS. 8 and 9. It is process drawing which shows the manufacturing method of the microresonator by other embodiment of this invention. It is process drawing which shows the manufacturing method of the microresonator by other embodiment of this invention. It is a perspective view which shows the external appearance of the mobile telephone as an electronic device by one Embodiment of this invention. FIG. 14 is a block diagram showing an electrical configuration of an electronic circuit provided in the mobile phone 100 shown in FIG. 13. It is a perspective view which shows the external appearance of the wristwatch as an electronic device by other embodiment of this invention.

Explanation of symbols

10 …… Microresonator 12 …… Silicon substrate 14a-14c …… Disk (resonator)
15b: Supporting part 16: Electrode 18 ... Electrode 30 ... Insulating film (laminated part)
34 …… First intermediate film (laminated part, intermediate film)
36 …… Second intermediate film (laminated part, insulating film)
40 …… Microresonator 42 …… Silicon substrate 43 …… Insulating film (lamination)
43a …… Oxide film (lamination)
43b ... Nitride film (lamination)
45 …… Sacrificial layer (lamination)
62 …… Fixed electrode (electrode)
72 …… Fixed electrode (electrode)
80 …… Resonator

Claims (13)

  1. A microresonator comprising a silicon substrate, a laminated portion including at least an insulating film formed on the silicon substrate, and a resonator and an electrode provided on the laminated portion,
    A plurality of resonators having different resonance frequencies;
    A microresonator comprising a plurality of electrodes provided corresponding to each of the resonators and electrically connected in parallel.
  2.   2. The microresonator according to claim 1, wherein the resonator has a circular shape, a beam shape, or a part of a comb shape.
  3.   The microresonator according to claim 1 or 2, wherein the resonator resonates by causing a position change or a shape change by an electric signal applied to the electrode.
  4. The resonator is resonated by causing a shape change by an electric signal applied to the electrode,
    2. The microresonator according to claim 1, further comprising a support portion that is formed at a position of a node where the shape change of the resonator does not occur and supports the resonator on the stacked portion.
  5.   5. The microresonator according to claim 1, wherein the resonators have a circular shape with the same thickness and have different diameters.
  6. A manufacturing method of a microresonator comprising a silicon substrate, a laminated portion including at least an insulating film formed on the silicon substrate, and a resonator and an electrode provided on the laminated portion,
    A resonator forming step of forming a plurality of resonators having different resonance frequencies on the laminated portion;
    Forming a plurality of electrodes electrically connected in parallel to each of the resonators, and a method of manufacturing a microresonator.
  7. The resonator forming step includes sequentially forming an insulating intermediate film and a conductive conductive film on the stacked portion;
    The method for manufacturing a microresonator according to claim 6, further comprising: patterning the conductive film to form the plurality of resonators on the intermediate film at a time.
  8.   8. The method of manufacturing a microresonator according to claim 7, wherein the resonator forming step is a step of forming the resonator in a circular shape, a beam shape, or a shape having a comb tooth shape in part.
  9. The electrode forming step includes a step of forming an insulating film on the intermediate film on which the plurality of resonators are formed;
    The method includes: forming a conductive film on an insulating film formed on the intermediate film, and removing the conductive film on the resonator to form the plurality of electrodes. Item 9. A method for producing a microresonator according to Item 8.
  10.   After forming the plurality of electrodes, the insulating film formed on the resonator is removed, and a part of the intermediate film formed on the stacked portion is removed to remove the plurality of electrodes. The method of manufacturing a microresonator according to claim 9, comprising a step of forming a support portion that supports each of the resonators.
  11.   The method of manufacturing a microresonator according to claim 10, wherein the step of forming the support portion is a step of forming a support column that supports a central portion of the plurality of resonators.
  12.   The method of manufacturing a microresonator according to any one of claims 6 to 11, wherein the conductive film is made of polysilicon.
  13. A microresonator manufactured according to any one of claims 1 to 5, or a microresonator manufactured using the method of manufacturing a microresonator according to any one of claims 6 to 12. Electronic equipment characterized by
JP2004089214A 2004-03-25 2004-03-25 Micro resonator, its manufacturing method, and electronic apparatus Withdrawn JP2005277861A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7940145B2 (en) 2006-11-10 2011-05-10 Hitachi, Ltd. Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7940145B2 (en) 2006-11-10 2011-05-10 Hitachi, Ltd. Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator
US8164399B2 (en) 2006-11-10 2012-04-24 Hitachi, Ltd. Thin film piezoelectric vibrator, thin film piezoelectric bulk acoustic wave resonator, and radio-frequency filter using such resonator

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