JP2005272159A - Method and apparatus for manufacturing inclusive fullerene - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and apparatus for manufacturing an inclusive fullerene by which any element of the periodic table can be easily and effectively included in fullerene molecules. <P>SOLUTION: The method for manufacturing the inclusive fullerene in which a guest element is included in fullerene molecules comprises a step of setting a supply source of the guest element and a supply source of the fullerene molecules in a plasma generation chamber, and a step of bringing the guest element and the fullerene molecules from the supply sources into a reaction with each other in the plasma generation chamber under plasma excitation. The apparatus for manufacturing the inclusive fullerene in which the guest element is included in fullerene molecules comprises a means to supply the guest element, a means to supply the fullerene molecules and a plasma exciting means. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

The present invention relates to a method for producing endohedral fullerene in which a guest element such as copper is encapsulated in a fullerene molecule such as C ₆₀ and a production apparatus therefor.

Lanthanum-encapsulated fullerene, in which lanthanum element (La) is encapsulated in the fullerene molecule, was discovered shortly after C ₆₀ was discovered in 1985 (JR Heath et al., 'Lanthannum complexes of spheroidal carbon shells', J Am. Chem. Soc. 1985, 107, 7779). Several years later, a lanthanum-encapsulated fullerene in which a large amount of lanthanum element visible to the naked eye was encapsulated in the fullerene molecule Cn (n is 60, 70, 74, 82) was produced by a laser ablation method (Y. Chai et al , J. Phys. Chem. 1991, 95, 7564). In the early 1990s, endohedral fullerenes containing elements other than the lanthanum element were produced in various laboratories around the world by the laser ablation method or the arc discharge method.

  The rare earth metal element can be easily included in the fullerene molecule.

  For example, in a complex in which one element is included in the fullerene molecule Cn (n is 60 or more), scandium (Sc), yttrium (Y), lanthanum (La), cerium (Ce), praseodymium are included as the included elements. (Pr), neodymium (Nd), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), ytterbium (Yb) or lutetium (Lu).

  In addition, in the complex in which two elements are encapsulated in the fullerene molecule Cn (n is 80 or more), yttrium (Y), lanthanum (La), cerium (Ce), tebium (Tb), holmium are encapsulated as elements. (Ho) or lutetium (Lu).

  In addition, in the complex in which three elements are encapsulated in the fullerene molecule Cn (n is 82 or more), scandium (Sc) or lanthanum (La) is exemplified as the encapsulated element.

  Furthermore, in the complex in which four elements are encapsulated in the fullerene molecule Cn (n is 80 or more), scandium (Sc) or erbium (Er) can be cited as the encapsulated element (for example, Non-Patent Document 1 described later) Or refer to non-patent document 2.)

  At present, pure lanthanoid-encapsulated fullerenes are exclusively produced by the arc discharge method.

  Other elements than the above-mentioned lanthanoid elements (Group 3A), specifically lithium (Li), sodium (Na), potassium (K), lead (Rb), cesium (Cs) (Group 1A), calcium (Ca ), Strontium (Sr), barium (Ba) (Group 2A), titanium (Ti), zirconium (Zr), hafnium (Hf) (Group 4A), nitrogen (N), phosphorus (P) (Group 5B), helium (He), xenon (Xe), etc. (Group 0) have also recently been reported as examples of inclusion in fullerene molecules.

Ion implantation is one of the techniques for encapsulating the above-mentioned elements inside fullerene molecules. For example, a sufficient energy ion beam such as lithium ion (Li ⁺ ) can be emitted into a substrate fullerene molecule composed of a single layer or multiple layers, and ions can be introduced into the fullerene molecule (for example, (See Non-Patent Document 3 below.) According to this method, a thin film having a thickness of several hundreds of nanometers containing several% of endohedral fullerene can be obtained. Since ion implantation can obtain ion sources of alkali metal elements and Group 5B elements relatively easily, it is suitable for producing a small amount of endohedral fullerene in which these elements are encapsulated inside the fullerene molecule. It is believed that

H. Shinohara, 'endohedral metallofullerenes: structures and electronic properties', Advances in metal and semiconductor clusters, 1998, 4, 205-226 'endohedral metallofullerenes', Rep. Prog. Phys., 2000, 63, 843-892 R. Tellgmann et al., Nature, 1996, 382, 407

  However, the conventional method as described above cannot be applied to all elements in the periodic table. That is, when an endohedral fullerene is produced by the above-described method using an element other than the above-mentioned elements of the 1A group, 2A group, 3A group, 4A group, 5B group, and 0 group, However, since the amount is insignificant, it is not possible to separate only the endohedral fullerenes.

This is because when an element other than the group 1A group, 2A group, 3A group, 4A group, 5B group, and 0 group element is included in the fullerene molecule, a normal high-temperature synthesis technique (for example, 3000 ° C.) This is because it is difficult for a technique such as arc discharge or laser ablation to encapsulate a 2A or 4A group metal element to exist in the state of encapsulated fullerene. Further, this is because it cannot be applied to an ion implantation method for including a group 1A or 5B element and a high temperature (for example, 800 ° C.) or high pressure (for example, 10 ⁸ Pa) method for including a group 0 element.

  The present invention has been made in view of such conventional circumstances, and can be applied to all elements of the periodic table, and can easily and effectively encapsulate elements inside fullerene molecules. It is to provide a manufacturing method and a manufacturing apparatus.

That is, the present invention relates to a method for producing an endohedral fulleren in which a guest element is encapsulated inside a fullerene molecule.
Allowing the guest element supply source and the fullerene molecule supply source to exist in a plasma generation chamber;
And a step of causing the guest element and the fullerene molecule from the supply source to react with each other under plasma excitation in the plasma generation chamber.

  Further, in an apparatus for producing an endohedral fullerene in which a guest element is encapsulated inside a fullerene molecule, the endohedral fullerene is provided with the guest element supply means, the fullerene molecule supply means, and a plasma excitation means. The present invention relates to a fullerene production apparatus.

  According to the present invention, the step of causing the supply source of the guest element and the supply source of the fullerene molecule to exist in the plasma generation chamber, and the guest element and the fullerene molecule from the supply source in the plasma generation chamber. And the step of reacting with each other under plasma excitation, the guest element can be included in the fullerene molecule easily, safely and effectively. Further, since the manufacturing method is performed at a low temperature (for example, 25 ° C.) and a low pressure (for example, 25 Pa), it can be applied to all elements of the periodic table.

  Moreover, since the pure fullerene molecule used as a raw material is used, the produced endohedral fullerene contains almost no impurities as compared with those produced by an arc discharge method or a laser ablation method as in the conventional example, Easy material post-processing.

  In the method for producing an endohedral fullerene according to the present invention, it is desirable that the guest element and the fullerene molecule collide with each other to introduce the guest element into the fullerene molecule, and the endohedral fullerene obtained is purified.

  The plasma excitation is preferably performed by a high frequency plasma power source.

  Specifically, the voltage of the high-frequency plasma power source is preferably controlled to a frequency of 0.1 to 1000 MHz, more preferably 1 to 100 MHz, and most preferably 13.56 MHz.

  Moreover, it is preferable that the power of the said high frequency plasma power supply shall be 1-1000W, More preferably, it is 20-200W.

  When the guest element is in a gas state, the guest element supplied in the gas state may be reacted with the fullerene molecule generated by heating and evaporation of the supply source.

  When the guest element is a solid, it is preferable that the fullerene molecules generated by heating and evaporation of the supply source react with the particulate guest element flying from the supply source.

  The heating and evaporation of the fullerene molecules described above may be performed by resistance heating or electron beam heating of the supply source made of the fullerene molecules.

  Further, in order to fly the particulate guest element from the supply source, resistance heating, electron beam heating or sputtering of the supply source made of the guest element may be performed. In the case of the sputtering, it is preferably performed in an atmosphere gas of hydrogen, nitrogen or an inert gas.

  The reaction between the fullerene molecule and the guest element is preferably performed in a gas pressure of 0.1 to 10,000 Pa, more preferably 1 to 100 Pa.

Furthermore, the above-mentioned purification process of the endohedral fullerene comprises
Extracting a soluble portion of the deposit with a solvent;
Filtering unwanted precipitates;
And a step of separating the target product by HPLC (high-performance liquid chromatography).

  In the endohedral fullerene production apparatus of the present invention, it is preferable that the plasma excitation means includes a counter electrode provided in the plasma generation chamber and a high-frequency plasma power source for supplying a high-frequency voltage between the counter electrodes.

  Specifically, the high-frequency plasma power source is preferably controlled to a frequency of 0.1 to 1000 MHz, more preferably 1 to 100 MHz, and most preferably 13.56 NHz.

  Moreover, it is preferable that the power of the said high frequency plasma power supply is 1-1000W, More preferably, it is 20-200W.

  Further, the fullerene molecules evaporate by heating of the supply means arranged in the plasma generation chamber, and the supply means of the guest element comprises a guest element-containing gas introduction pipe provided in the plasma generation chamber. preferable.

  Furthermore, it is preferable that the fullerene molecules evaporate by heating of the supply means arranged in the plasma generation chamber, and the guest elements in the form of particles fly from the supply means of the guest elements.

  The fullerene molecules are preferably supplied by resistance heating or electron beam heating of the supply means, and the guest element is preferably supplied by resistance heating, electron beam heating or sputtering. In the case of the sputtering, it is preferable that the sputtering is performed under a gas atmosphere of hydrogen, nitrogen, or an inert gas.

  Moreover, it is preferable that the gas pressure in the said plasma generation chamber at the time of reacting with the said fullerene molecule | numerator and the said guest element is controlled to 0.1-10000 Pa, More preferably, it is 1-100 Pa.

  In the endohedral fullerene production apparatus according to the present invention, the supply means for the guest element is joined to the counter electrode, or at least a part of the counter electrode is composed of the supply means for the guest element. Is preferred.

  The surface shape of the counter electrode and the supply means for the guest element may be flattened or roughened. When the roughened counter electrode and the guest element supply unit are used, the reaction between the guest element and the fullerene molecule can be performed more efficiently.

  Furthermore, it is preferable that the supply means for the fullerene molecule and the guest element is disposed between the counter electrodes.

  In the present invention, the fullerene molecule is preferably represented by Cn (n is 20 to 200). This fullerene molecule is a general term for a series of spherical carbon-based molecules consisting only of carbon, and includes 12 5-membered rings and an arbitrary number of 6-membered rings. That is, it is a spherical carbon-based molecule in which 20 to 200 carbon atoms are bonded in a spherical shape to form a cluster (molecular assembly). The carbon number n of the fullerene molecule Cn is particularly preferably 60 to 70.

  According to the method and apparatus for producing an endohedral fullerene based on the present invention, 1 to 10 of the guest elements can be encapsulated with respect to one fullerene molecule.

  Examples of the guest element include hydrogen, cesium, francium, beryllium, magnesium, radium, promethium, actinium, thorium, protoactinium, neptunium, plutonium, americium, curium, barium, californium, einsteinium, fermium, mendelevium, and noberium. , Lorencium, zirconium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, technetium, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, zinc, cadmium , Mercury, boron, aluminum, gallium, indium, thallium, carbon, silicon, germanium, tin, lead, arsenic, antimony Bismuth, oxygen, sulfur, tellurium, polonium, fluorine, chlorine, bromine, iodine, astatine, neon, that is included an element selected from the element group comprising radon preferred.

  Moreover, it is preferable to include a transition metal element, a non-transition metal element, or a metalloid element as the guest element.

  Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the drawings.

First Embodiment FIG. 1 is a schematic cross-sectional view of an example of an endohedral fullerene production apparatus according to the present invention.

  As shown in FIG. 1, a manufacturing apparatus 1 according to the present invention is provided with a counter electrode (plasma electrode 3a and ground electrode 3b) in a plasma generation chamber 2, and a high frequency voltage is applied between the counter electrodes 3a and 3b. A high-frequency plasma power supply 4 is provided. Further, a fullerene molecule supply source 7 is arranged on a heating plate 6 connected to a DC heat source 5 as a supply means of the fullerene molecules. Furthermore, it has a gas introduction tube 8 and a vacuum suction tube 9.

  The fullerene molecules can be generated by heating and evaporation of the fullerene molecule supply source 7. At this time, the heating and evaporation of the fullerene molecule supply source 7 may be performed by resistance heating or electron beam heating.

  Here, when the guest element is in a gas state such as helium (He) or nitrogen (N), the guest element-containing gas can be introduced into the plasma generation chamber 2 through the gas introduction pipe 8. The guest element supplied in a gas state is caused to react with the fullerene molecules generated by heating and evaporation of the supply source 7. That is, under plasma excitation, the guest element and the fullerene molecule are caused to collide with each other to introduce the guest element into the fullerene molecule.

  On the other hand, when the guest element is a solid such as copper (Cu), the guest element supply source (target material) 10 may be joined to the plasma electrode 3a as indicated by a virtual line in the figure. Then, by performing sputtering of the supply source 10, the particulate guest element is allowed to fly from the supply source 10, and the particulate guest element and fullerene molecules generated by heating and evaporation of the supply source 7 in the same manner as described above. Can be introduced into the fullerene molecule by collision reaction with each other under plasma excitation.

  The sputtering is preferably performed in an atmosphere gas of hydrogen, nitrogen, or an inert gas. The gas as described above may be introduced into the plasma generation chamber 2 from the gas introduction tube 8.

  The reaction between the fullerene molecule and the guest element is preferably performed in a gas pressure of 0.1 to 10,000 Pa, more preferably 1 to 100 Pa.

  The high frequency plasma power source 4 is preferably controlled to a frequency of 0.1 to 1000 MHz, more preferably 1 to 100 MHz, and most preferably 13.56 NHz.

  Moreover, it is preferable that the power of the high frequency plasma power supply 4 is 1-1000W, More preferably, it is 20-200W.

  According to the endohedral fullerene production apparatus and method according to the present invention, the guest element supply source 10 and the fullerene molecule supply source 7 exist in the plasma generation chamber 2 and are supplied in the plasma generation chamber 2. The guest element and the fullerene molecule from the sources 10 and 7 are caused to collide with each other under plasma excitation to introduce the guest element into the fullerene molecule, so that the fullerene molecule can be easily, safely and effectively The guest element can be encapsulated in the inside. Further, since the endohedral fullerene can be produced at a low temperature (for example, 25 ° C.) and a low pressure (for example, 25 Pa), it can be applied to all elements in the periodic table as the guest element.

  Further, since the pure fullerene molecule used as a raw material is used, the produced endohedral fullerene contains almost no impurities as compared with those produced from the arc discharge method or the laser ablation method as in the conventional example, Easy material post-processing.

FIG. 2 is a schematic view of the endohedral fullerene that can be produced by the production method and production apparatus according to the present invention. 2A and 2B, the position of the guest element 12 encapsulated in the fullerene molecule (for example, C ₆₀ ) 11 and the chemical bond between the encapsulated guest element 12 and the fullerene molecule 11 are shown. Different types. That is, in FIG. 2A, the guest element 12 is located at the center inside the fullerene molecule 11. In FIG. 2B, the guest element 12 is attached to the inner wall of the fullerene molecule 11.

  The difference between (a) and (b) as described above is determined by the type of guest element 12 included in the fullerene molecule 11. For example, when nitrogen (N), helium (He), or the like is used as the guest element 12, these guest elements 12 tend to be located at the center of the fullerene molecule 11, as shown in FIG. On the other hand, when copper (Cu) or gold (Au) is used as the guest element 12, these guest elements 12 tend to adhere to the inner wall of the fullerene molecule 11, as shown in FIG. This is because the central portion of the fullerene molecule 11 has the minimum energy, and is related to the weak interaction between the encapsulated guest element 12 and the fullerene molecule 11.

  It is considered that the inclusion of the guest element 12 inside the fullerene molecule 11 changes the structural and electronic characteristics of the fullerene molecule 11 or imparts the characteristics of the guest element 12 to the fullerene molecule 11. Thereby, it is thought that endohedral fullerene 13 can express the function which fullerene molecule | numerator 11 does not have independently.

Second Embodiment In the endohedral fullerene production apparatus according to the present invention, when the guest element is a solid such as gold (Au) or copper (Cu), the surface of the counter electrode and the guest element supply means The shape may be flat or roughened.

  FIG. 3 is a partial schematic cross-sectional view of an endohedral fullerene production apparatus according to the present invention in which a guest element supply source (target material) 10 having a roughened surface shape is joined to a plasma electrode 3a. As shown in FIG. 3, if the surface shape of the guest element supply source 10 is roughened, the guest element 12 can be supplied more efficiently into the plasma generation chamber, and the guest element 12 and the supply source The collision reaction with the fullerene molecules 11 generated by heating and evaporation can be performed more effectively. Thereby, it becomes possible to manufacture the endohedral fullerene 13 more efficiently.

Third Embodiment As described in the first embodiment, when the guest element is solid, the guest element is supplied into the plasma generation chamber by sputtering of the supply source of the guest element. Can do. However, the fullerene molecules generated by heating and evaporation of the supply source may cover the counter electrode, and as a result, the supply amount of the guest element may be reduced.

  Therefore, in order to supply the guest element continuously and effectively, for example, as shown in FIG. 4, the guest element supply source 10 is joined to the plasma electrode 3a, and two heating elements are provided in the plasma generation chamber 2. The plates 6a and 6b may be installed, and the fullerene molecule supply source 7 may be disposed on the heating plate 6a positioned at the upper portion, and the guest element supply source 10 ′ may be disposed on the heating plate 6b positioned at the lower portion.

  Then, by performing sputtering of the supply source 10, the particulate guest element is caused to fly from the supply source 10, and the guest element is generated by heating and evaporation of the supply source 10 ′. The guest elements are introduced into the fullerene molecules by causing collisions between the fullerene molecules generated by heating and vaporization of each other under plasma excitation. Thereby, the endohedral fullerene can be produced more effectively.

  EXAMPLES Hereinafter, although an Example demonstrates this invention further more concretely, this invention is not limited to the following example at all.

Example 1 (nitrogen-containing fullerene)
In order to produce the nitrogen-encapsulated fullerene, a production apparatus based on the present invention as shown in FIG. 1 was constructed. Pure nitrogen was used as the guest element supply source. Fullerene molecule C ₆₀ (250 mg, purity 99.8% or more) as the fullerene molecule supply source was arranged on the molybdenum boat as the heating plate, and pure nitrogen gas was introduced into the plasma generation chamber through the gas introduction tube. . Then, fullerene molecules were vaporized by resistance heating in nitrogen plasma under a pressure of 25 Pa. In order to easily collect the product, the high-frequency plasma electrode was covered with aluminum foil, and the product was deposited thereon. The high frequency plasma was controlled at 13.56 MHz and 50 W. Incidentally, the operation was terminated at 10 minutes to avoid polymerization of fullerene molecules C _60.

After completion of the reaction, the product was cooled to room temperature, and the product containing raw material fullerene molecule C ₆₀ , polymerized fullerene molecule and the target nitrogen-encapsulated fullerene was collected and dissolved in CS ₂ . The soluble portion was separated by filtering the resulting solution through a 0.2 μm polytetrafluoroethylene (PTFE) filter. Usually, 10-20% of the collected product was soluble. The filtered solution was condensed in a vacuum pipe for ESR (electron spin resonance) measurement and sealed.

FIG. 5 is an ESR spectrum of the product obtained as described above. The hyperfine coupling constant was about 0.567 mT, and the g value was 2.00235. These ESR parameters were the same as the products obtained by ion implantation, and it was confirmed that the nitrogen-encapsulated fullerene was produced by high-frequency plasma. The ratio of the nitrogen-encapsulated fullerene to the fullerene molecule (nitrogen-encapsulated fullerene / fullerene molecule) was between 10 ^{−4 and} 10 ⁻³ under the optimum conditions as described above. This is about the same as or better than that by ion implantation.

Example 2 (Copper-included fullerene)
In order to produce copper-encapsulated fullerene, a production apparatus based on the present invention as shown in FIG. 1 was constructed. As the guest element supply source, a copper foil was joined to the high-frequency plasma electrode. Moreover, fullerene molecule C ₆₀ (250 mg, purity 99.8% or more) was arranged on the molybdenum boat as the heating plate as the fullerene molecule supply source. Nitrogen (N ₂ ) gas was introduced into the plasma generation chamber through the gas introduction tube, and fullerene molecules were vaporized by resistance heating under a pressure of 25 Pa. The high frequency plasma was controlled at 13.56 MHz and 50 W. Incidentally, the operation was terminated at 10 minutes to avoid polymerization of fullerene molecules C _60.

  When the high frequency plasma power supply was turned on with sufficient power, the copper made a loud sound. The higher the power of the high frequency plasma power supply used, the more efficient sputtering effect could be obtained.

After the completion of the reaction, the product was cooled to room temperature, and the product containing raw material fullerene molecule C ₆₀ , polymerized fullerene molecule and target copper-encapsulated fullerene was collected and dissolved in CS ₂ . The soluble portion was separated by filtering the resulting solution through a 0.2 μm polytetrafluoroethylene (PTFE) filter. Usually, 10-20% of the collected product was soluble. The filtered solution was condensed into a vacuum pipe for ESR measurement and sealed.

FIG. 6 is an ESR spectrum of the product obtained as described above. Copper has two natural abundances and a spin multiplicity of two (doublet). The nuclear spin is 3/2. Precisely analyzed four lines, copper element does Awa linked together, also points out that it is separated by the fullerene molecules C _60. The g value at the center of the four lines is 2.0473, which is clearly smaller than the g value 2.10 to 2.40 in a general Cu ²⁺ complex such as diethanolamine-Cu ²⁺ . Lowering Such g values are for diamagnetic shielding of fullerene molecules C _60, this phenomenon occurred only when the copper ions (Cu ²⁺⁾ was encapsulated inside the fullerene molecule C ₆₀ It was.

FIG. 7 is a TOF-MS (time of flight mass spectrometry) spectrum of the purified copper-encapsulated fullerene. As is clear from FIG. 7, the presence of a peak derived from copper-encapsulated fullerene (fullerene molecule C ₆₀ ) proves that copper ions (Cu ²⁺ ) are encapsulated inside the fullerene molecule C ₆₀ . In addition, copper-encapsulated fullerene (fullerene molecule C ₅₈ ) was generated when two carbon atoms of fullerene molecule C ₆₀ disappeared under laser irradiation.

  As mentioned above, although this invention was demonstrated based on embodiment and an Example, this invention is not limited to these examples at all, and it cannot be overemphasized that it can change suitably in the range which does not deviate from the main point of invention. .

  For example, the example in which the guest element supply source (target material) 11 is bonded to the plasma electrode 3a with reference to FIG. 1 is described above. A part may consist of the supply means of the guest element.

It is a schematic sectional drawing of the manufacturing apparatus of the endohedral fullerene based on this invention by embodiment of this invention. It is a schematic diagram of the endohedral fullerene obtained by the manufacturing method of the endohedral fullerene based on this invention. It is a partial schematic sectional drawing of the manufacturing apparatus of the endohedral fullerene based on this invention. It is a schematic sectional drawing of the other example of the manufacturing apparatus of the endohedral fullerene based on this invention. 2 is an ESR spectrum of a product containing nitrogen-encapsulated fullerenes according to an embodiment of the present invention. It is an ESR spectrum of a product containing copper-encapsulated fullerene. It is the TOF-MS spectrum of copper inclusion fullerene.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Production apparatus of inclusion fullerene, 2 ... Plasma generation chamber, 3a ... Plasma electrode,
3b ... ground electrode, 4 ... high frequency plasma power source, 5 ... DC heat source, 6 ... heating plate,
7 ... fullerene molecule supply source, 8 ... gas introduction tube, 9 ... vacuum suction tube,
10 ... Guest element supply source (target material), 11 ... Fullerene molecule, 12 ... Guest element, 13 ... Encapsulated fullerene

Claims (32)

In the method for producing an endohedral fullerene in which a guest element is encapsulated inside the fullerene molecule,
Allowing the guest element supply source and the fullerene molecule supply source to exist in a plasma generation chamber;
And a step of reacting the guest element and the fullerene molecule from the supply source with each other under plasma excitation in the plasma generation chamber.   The method for producing an endohedral fullerene according to claim 1, wherein the guest element and the fullerene molecule collide with each other to introduce the guest element into the fullerene molecule, and the endohedral fullerene obtained is purified.   The method for producing an endohedral fullerene according to claim 1, wherein the plasma excitation is performed by a high frequency plasma power source.   The method for producing an endohedral fullerene according to claim 3, wherein the voltage of the high-frequency plasma power source is controlled to a frequency of 0.1 to 1000 MHz.   The method for producing an endohedral fullerene according to claim 3, wherein the power of the high-frequency plasma power source is 1-1000W.   The method for producing endohedral fullerene according to claim 1, wherein the fullerene molecules generated by heating and evaporation of the supply source are reacted with the guest element supplied in a gas state.   The method for producing endohedral fullerene according to claim 1, wherein the fullerene molecules generated by heating and evaporation of the supply source are reacted with the particulate guest element flying from the supply source.   The method for producing endohedral fullerene according to claim 6 or 7, wherein resistance heating, electron beam heating or sputtering is performed on the supply source comprising the fullerene molecule and / or the guest element.   The method for producing an endohedral fullerene according to claim 8, wherein the sputtering is performed under an atmosphere gas of hydrogen, nitrogen, or an inert gas.   The method for producing an endohedral fullerene according to claim 1, wherein the reaction between the fullerene molecule and the guest element is performed in a gas pressure of 0.1 to 10,000 Pa.   The method for producing an endohedral fullerene according to claim 1, wherein the fullerene molecule represented by Cn (n is 20 to 200) is used.   The method for producing an endohedral fullerene according to claim 1, wherein 1 to 10 of the guest elements are encapsulated in one fullerene molecule.   Examples of the guest element include hydrogen, cesium, francium, beryllium, magnesium, radium, promethium, actinium, thorium, protoactinium, neptunium, plutonium, americium, curium, barium, californium, einstynium, fermium, mendelevium, nobelium, laurenium, Zirconium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, technetium, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, zinc, cadmium, mercury, Boron, aluminum, gallium, indium, thallium, carbon, silicon, germanium, tin, lead, arsenic, antimony, bisma , Oxygen, sulfur, tellurium, polonium, fluorine, chlorine, bromine, iodine, astatine, neon, for encapsulating an element selected from the element group comprising radon method of fullerenes as claimed in claim 1.   The method for producing an endohedral fullerene according to claim 13, wherein a transition metal element, a non-transition metal element, or a metalloid element is encapsulated as the guest element. The step of purifying the endohedral fullerene comprises
Extracting a soluble portion of the deposit with a solvent;
Filtering unnecessary precipitates;
The method for producing an endohedral fullerene according to claim 2, further comprising a step of separating a target product by HPLC (high-performance liquid chromatography).   In an apparatus for producing an endohedral fullerene in which a guest element is encapsulated in a fullerene molecule, the endohedral fullerene has a guest element supply means, a fullerene molecule supply means, and a plasma excitation means. manufacturing device.   The endohedral fullerene manufacturing apparatus according to claim 16, wherein the plasma excitation unit includes a counter electrode provided in a plasma generation chamber and a high-frequency plasma power source that supplies a high-frequency voltage between the counter electrodes.   The endohedral fullerene manufacturing apparatus according to claim 17, wherein the high-frequency plasma power source is controlled to a frequency of 0.1 to 1000 MHz.   The endohedral fullerene manufacturing apparatus according to claim 17, wherein the high-frequency plasma power source has a power of 1 to 1000 W.   The fullerene molecule evaporates by heating of the supply means arranged in the plasma generation chamber, and the supply means of the guest element comprises a guest element-containing gas introduction pipe provided in the plasma generation chamber. The endohedral fullerene production apparatus described in 1.   The endohedral fullerene production apparatus according to claim 16, wherein the fullerene molecules evaporate by heating of the supply means disposed in the plasma generation chamber, and the guest elements in the form of particles fly from the supply means of the guest elements. .   The endohedral fullerene production apparatus according to claim 20 or 21, wherein the fullerene molecules or / and the guest element are supplied by resistance heating, electron beam heating or sputtering of the supply means.   The apparatus for producing an endohedral fullerene according to claim 22, wherein the sputtering is performed under a gas atmosphere of hydrogen, nitrogen, or an inert gas.   23. The endohedral fullerene manufacturing apparatus according to claim 22, wherein the supply means for the guest element is joined to the counter electrode.   23. The endohedral fullerene production apparatus according to claim 22, wherein at least a part of the counter electrode is composed of the supply means for the guest element.   The endohedral fullerene production apparatus according to claim 24, wherein the counter electrode and the guest element supply means have a flat or rough surface.   23. The endohedral fullerene production apparatus according to claim 22, wherein the supply means for the fullerene molecules and the guest element is disposed between the counter electrodes.   The apparatus for producing endohedral fullerene according to claim 16, wherein a gas pressure in the plasma generation chamber when the reaction between the fullerene molecule and the guest element is controlled is 0.1 to 10,000 Pa.   The endohedral fullerene production apparatus according to claim 16, wherein the fullerene molecule is represented by Cn (n is 20 to 200).   17. The endohedral fullerene production apparatus according to claim 16, wherein 1 to 10 of the guest elements are included in one fullerene molecule.   Examples of the guest element include hydrogen, cesium, francium, beryllium, magnesium, radium, promethium, actinium, thorium, protoactinium, neptunium, plutonium, americium, curium, barium, californium, einstynium, fermium, mendelevium, nobelium, laurenium, Zirconium, vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, technetium, rhenium, iron, ruthenium, osmium, cobalt, rhodium, iridium, nickel, palladium, platinum, copper, silver, gold, zinc, cadmium, mercury, Boron, aluminum, gallium, indium, thallium, carbon, silicon, germanium, tin, lead, arsenic, antimony, bisma , Oxygen, sulfur, tellurium, polonium, fluorine, chlorine, bromine, iodine, astatine, neon, an element selected from the element group comprising radon is contained apparatus for producing fullerenes according to claim 16.   32. The endohedral fullerene production apparatus according to claim 31, wherein a transition metal element, a non-transition metal element, or a metalloid element is included as the guest element.

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