JP2005268595A - Coating device and coating method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a coating device and a coating method for uniformly coating the inside of a wafer surface with a resist liquid, namely a coating liquid, using a resist liquid discharge nozzle traveling on the wafer. <P>SOLUTION: A thermocouple 30 is mounted onto the inner surface of a discharge hole 22c in the resist liquid discharge nozzle 22 for detecting the temperature of a resist liquid immediately before being discharged from the resist liquid discharge nozzle 22. The detection result of temperature by the thermocouple 30 is outputted to a main control section 32. When the temperature exceeds a tolerance, the main control section 32 calculates the optimum supply pressure of a pump 25 based on the temperature, and changes the set supply pressure of the pump 25 set to a pump control section 26 to the calculated supply pressure. As a result, even if the temperature of the resist liquid immediately before the discharge varies by the travel of the resist liquid discharge nozzle 22 and the viscosity of the resist liquid varies, a fixed amount of resist liquid is constantly discharged onto the wafer W, and the inside of the wafer surface is uniformly coated with the resist liquid. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a coating apparatus and a coating method for coating a substrate with a coating liquid.

  For example, in a semiconductor device manufacturing process, a coating process is performed in which a resist solution for forming a resist film, an SOD solution for forming an SOD (Spin on Dielectric) film, or the like is applied on a wafer.

  For the coating process, for example, a coating method is used in which the resist solution is applied onto the wafer while the discharge nozzle is moved along the surface of the wafer while the resist solution is discharged onto the wafer from the discharge nozzle ( For example, see Patent Document 1.) According to this coating method, compared with a so-called spin coating method in which a resist solution is discharged onto a rotated substrate, the resist solution does not scatter from the wafer and is wasted, so that the amount of the resist solution can be reduced.

  By the way, in the above-described coating method, in order to form a uniform resist film on the surface of the wafer, the discharge nozzle needs to supply the resist solution uniformly to the wafer within the wafer surface. Therefore, conventionally, the pressure of the pump for pumping the resist solution to the discharge nozzle is made constant, and the discharge amount (discharge rate) of the resist solution discharged from the discharge nozzle is made constant, so that the resist solution in the wafer surface is constant. The supply amount was made uniform.

  However, in the above case, the resist nozzle is discharged while the discharge nozzle is moving. For example, the discharge nozzle is temporarily cooled by the influence of a wind colliding with the discharge nozzle during the movement, and passes through the discharge nozzle. The temperature of the resist solution that was present sometimes fluctuated. This temperature fluctuation caused the viscosity of the resist solution passing through the discharge nozzle to fluctuate, and the discharge amount of the resist solution discharged from the discharge nozzle was not constant even if the pump supply pressure was constant. As a result, the resist solution was not actually applied evenly over the wafer surface.

  In addition, the above coating method is usually performed in a processing chamber of a coating apparatus equipped with a discharge nozzle. However, in the conventional processing chamber, since positive temperature adjustment has not been performed, the temperature in the processing chamber is, for example, It fluctuated irregularly due to the temperature of the outside air around the processing chamber. When the temperature in the processing chamber fluctuates, the state of the resist solution supplied from the discharge nozzle onto the wafer fluctuates. For example, the drying progresses rapidly, and the coating amount of the resist solution is uniform over the wafer surface. It was gone.

  In particular, in the above-described coating method, a very small amount of resist solution is supplied onto the wafer surface in order to form an extremely thin resist film, so that slight fluctuations in the temperature of the discharge nozzle itself and the atmospheric temperature in the processing chamber may occur. It had a great influence on the uniformity of the in-plane resist solution.

JP 2000-77326 A

  The present invention has been made in view of the above points, and in a coating apparatus that discharges a coating liquid while a coating liquid discharge nozzle such as a resist liquid discharge nozzle moves relative to a substrate such as a wafer. It is an object of the present invention to provide a coating apparatus and a coating method capable of uniformly coating a coating liquid.

  In order to achieve the above object, the present invention provides a coating apparatus for applying a coating solution to a substrate, the holding member holding the substrate, and moving on the substrate held by the holding member along the surface of the substrate In the coating liquid discharge nozzle, a coating liquid discharge nozzle that discharges the coating liquid linearly to the substrate, a pumping device that pumps the coating liquid to the coating liquid discharge nozzle at a predetermined pressure, and A temperature detection member that detects the temperature of the coating liquid; and a control unit that adjusts the supply pressure of the coating liquid in the pressure feeding device based on the temperature of the coating liquid detected by the temperature detection member. It is characterized by.

  According to the present invention, the temperature of the coating liquid at the coating liquid discharge nozzle can be detected by the temperature detection member, and the supply pressure of the coating liquid to the coating liquid discharge nozzle can be adjusted based on the temperature of the coating liquid. For example, when the temperature of the coating liquid at the coating liquid discharge nozzle rises and the viscosity of the coating liquid decreases to increase the discharge amount from the coating liquid discharge nozzle, the supply pressure of the coating liquid to the coating liquid discharge nozzle is reduced. . On the other hand, when the temperature of the coating liquid decreases and the viscosity of the coating liquid increases and the discharge amount from the coating liquid discharge nozzle decreases, the supply pressure of the coating liquid is increased. By doing so, the discharge amount of the coating liquid discharged from the coating liquid discharge nozzle can be kept constant. That is, according to the temperature variation of the coating liquid immediately before the ejection, the coating liquid can be uniformly applied in the substrate surface by adjusting the supply pressure of the coating liquid so that the ejection amount of the coating liquid becomes constant.

  The coating liquid discharge nozzle may have a tip part from which the coating liquid is discharged, and the temperature detection member may be provided in a flow path of the coating liquid in the tip part. In this case, since the temperature of the coating liquid immediately before discharge can be measured, the supply pressure of the coating liquid can be adjusted more strictly based on the temperature, and the uniformity of the coating liquid in the substrate surface can be further improved.

  A coating liquid discharge hole may be formed at the tip of the coating liquid discharge nozzle, and the temperature detection member may be attached to the inner peripheral surface of the discharge hole.

  The connection line connected to the temperature detection member may pass through the inside of the wall portion that forms the outer shape of the coating liquid discharge nozzle. When the connection line passes through the flow path of the coating liquid in the coating liquid discharge nozzle, the connection line may contaminate the flow path of the coating liquid. Further, when the connection line passes outside the coating liquid discharge nozzle, the movement of the coating liquid discharge nozzle may be hindered by the connection line. According to the present invention, since the connection line passes through the inside of the wall portion, the inside of the flow path of the coating liquid of the coating liquid discharge nozzle is not contaminated, and the movement of the coating liquid discharge nozzle is not hindered. The “connection line” includes, for example, a signal line that outputs a signal from the temperature detection member, a power supply line that supplies power to the temperature detection member, and the like.

  According to the present invention, there is provided a coating apparatus that applies a coating liquid to a substrate in a processing chamber, the holding member that holds the substrate in the processing chamber, and the substrate held by the holding member along the surface of the substrate. While moving, a coating liquid discharge nozzle for discharging the coating liquid linearly to the substrate, a temperature detection member for detecting the temperature in the processing chamber, and the temperature in the processing chamber detected by the temperature detection member And a controller that adjusts the supply pressure of the coating liquid in the pressure feeding device.

  According to the present invention, the supply pressure of the coating liquid to the coating liquid discharge nozzle can be adjusted based on the temperature in the processing chamber. For example, when the temperature in the processing chamber rises temporarily and, for example, the coating solution supplied onto the substrate evaporates rapidly, the supply pressure of the coating solution to the coating solution discharge nozzle is increased to apply the coating solution to the substrate. Increase the amount of liquid applied. On the other hand, when the temperature in the processing chamber decreases and, for example, the normal evaporation of the coating solution on the substrate is not performed, the supply pressure of the coating solution is reduced to reduce the coating amount on the substrate. By doing so, the coating amount of the coating liquid on the substrate can be maintained uniformly within the substrate surface. That is, the supply pressure of the coating liquid can be adjusted according to the temperature fluctuation in the processing chamber, and the amount of the coating liquid finally applied on the substrate can be made uniform in the substrate surface.

  The coating apparatus reciprocates the coating liquid discharge nozzle in one horizontal direction on the surface of the substrate held by the holding member, and further moves the coating liquid discharge nozzle and the holding member in the one horizontal direction. You may further provide the moving mechanism moved relatively to the other horizontal direction of a right angle.

  The present invention applies a coating liquid to a substrate by discharging the coating liquid from the coating liquid discharge nozzle to the substrate in a linear manner while moving the coating liquid discharge nozzle along the surface of the substrate on the substrate. A coating method for measuring the temperature of the coating liquid immediately before being discharged from the coating liquid discharge nozzle, and applying the coating liquid supplied to the coating liquid discharge nozzle based on the measured temperature of the coating liquid The supply pressure of the liquid is adjusted. Note that “immediately before being discharged from the coating liquid discharge nozzle” includes, for example, the time when the coating liquid supplied from an external coating liquid supply source to the coating liquid discharge nozzle passes through the coating liquid discharge nozzle.

  According to the present invention, for example, when the temperature of the coating liquid immediately before discharge varies with the movement of the coating liquid discharge nozzle, the coating liquid discharged from the coating liquid discharge nozzle is changed by changing the supply pressure of the coating liquid. The discharge amount can be controlled to be constant. As a result, the coating liquid can be uniformly applied within the substrate surface.

  The present invention relates to a coating method for applying a coating liquid to a substrate by discharging a coating liquid linearly onto the substrate while a coating liquid discharge nozzle moves on the substrate along the surface of the substrate in a processing chamber. The temperature inside the processing chamber is measured, and the supply pressure of the coating liquid supplied to the coating liquid discharge nozzle is adjusted based on the temperature.

  According to the present invention, when the temperature in the processing chamber fluctuates, the supply pressure of the coating liquid to the coating liquid discharge nozzle is changed based on the temperature, and the amount of the coating liquid finally applied on the substrate is changed to the substrate surface. It can be made uniform in the inside.

  When the coating liquid discharge nozzle is moving while discharging the coating liquid, the temperature is measured, and when the measured temperature exceeds a predetermined threshold, the supply pressure of the coating liquid is reduced. It may be changed. In such a case, the coating liquid can be uniformly applied within the substrate surface by changing the supply pressure of the coating liquid as necessary during the discharge of the coating liquid.

  The coating liquid discharge nozzle that discharges the coating liquid is reciprocated in one horizontal direction from the outside of one end of the substrate to the outside of the other end, and the coating liquid discharging nozzle and the substrate are further moved. The coating liquid is applied to the entire surface of the substrate by intermittently moving in the other horizontal direction perpendicular to the one horizontal direction, and the supply pressure of the coating liquid is adjusted by the coating liquid discharge nozzle. It may be performed every time the substrate moves from the outer side on one end side to the outer side on the other end side. Further, the supply pressure of the coating liquid may be changed when the coating liquid discharge nozzle is not on the surface of the substrate. In such a case, since the supply pressure of the coating liquid is not changed when the coating liquid discharge nozzle is moving on the surface of the substrate, for example, the discharge amount of the coating liquid is temporarily unstable when the supply pressure is changed. Even in this case, the coating liquid with an unstable discharge amount is not supplied to the substrate.

  The present invention discharges the coating liquid linearly from the coating liquid discharging nozzle to the substrate while reciprocating the coating liquid discharging nozzle on the substrate in one horizontal direction along the surface of the substrate. A coating method for coating a coating liquid over the entire surface of a substrate by intermittently relatively moving a liquid discharge nozzle and a substrate in another horizontal direction perpendicular to the one horizontal direction, Measuring the temperature of the coating liquid immediately before being discharged from the liquid discharge nozzle, and adjusting the distance of the intermittent relative movement between the coating liquid discharge nozzle and the substrate based on the measured temperature of the coating liquid It is characterized by.

  According to the present invention, for example, when the temperature of the coating liquid immediately before ejection varies with the movement of the coating liquid ejection nozzle, the intermittent movement distance between the coating liquid ejection nozzle and the substrate is adjusted. Thus, for example, when the temperature of the coating liquid rises and the discharge amount from the coating liquid discharge nozzle increases, the movement distance between the other horizontal coating liquid discharge nozzle and the substrate is increased, and The interval of the linear coating solution supplied to the is increased. On the other hand, when the temperature of the coating liquid decreases and the discharge amount decreases, the other horizontal movement distance is reduced to narrow the interval of the coating liquid on the substrate. By doing so, the amount of the coating solution supplied onto the substrate is made uniform in the substrate surface, and the uniformity of the coating solution in the substrate surface is improved.

  According to the present invention, since the coating liquid discharged from the coating liquid discharge nozzle is uniformly applied within the substrate surface, a uniform coating film is formed on the substrate, and as a result, the yield of substrate processing is improved. It is done.

  Hereinafter, preferred embodiments of the present invention will be described. FIG. 1 is an explanatory view of a longitudinal section showing an outline of a configuration of a coating apparatus 1 according to the present embodiment, and FIG. 2 is an explanatory view of a transverse section of the coating apparatus 1.

  The coating apparatus 1 has a housing 2 whose upper surface is open, for example, as shown in FIG. A chuck 3 as a holding member that holds the wafer W is provided at the center of the housing 2. For example, the upper surface of the chuck 3 is formed horizontally, and a suction port (not shown) for adsorbing the wafer W, for example, is provided on the upper surface. The wafer W can be sucked and held on the chuck 3 by suction from the suction port. The chuck 3 is provided with an elevating mechanism (not shown) for moving the wafer W up and down and a rotating mechanism (not shown) for aligning the wafer W.

  The chuck 3 is attached to, for example, an XY stage 4 and can move in the X direction (left-right direction in FIG. 2) and Y direction (up-down direction in FIG. 2). For example, the XY stage 4 includes a first rail 5 formed along the X direction and a second rail 6 formed along the Y direction. For example, the XY stage 4 is chucked by the stage driving unit 7 shown in FIG. 3 can be moved along the first rail 5 and the second rail 6. Accordingly, the chuck 3 receives the wafer W from the wafer loading / unloading port 8 provided on the negative side in the X direction (left direction in FIG. 2) of the housing 2, for example, and sends the wafer W to the central portion of the housing 2. Can be moved. Further, the chuck 3 can move the wafer W from the vicinity of one end of the housing 2 to the vicinity of the other end along the Y direction. The operation of the stage drive unit 7 is controlled by the chuck control unit 9, and the chuck control unit 9 moves the chuck 3 intermittently at a predetermined distance (for example, intermittently according to a preset movement position, movement speed, and movement timing). Step by step).

  The casing 2 is provided with a top plate 20 that covers the upper surface of the casing 2. A processing chamber S is formed in the housing 2 by the top plate 20. A long slit 21 is formed in the vicinity of the center of the top plate 20 along the X direction. A resist solution discharge nozzle 22 as a coating solution discharge nozzle is disposed in the slit 21.

  For example, as shown in FIG. 3, the resist solution discharge nozzle 22 includes a substantially cylindrical main body portion 22a, and a tapered tip portion 22b at a lower portion thereof. For example, a discharge hole 22c that defines the thickness of the discharged resist solution is formed at the lower end of the tip 22b. The discharge hole 22c is formed with a diameter of about 30 μm to 200 μm, for example. For example, a supply pipe 24 communicating with, for example, a resist solution supply source 23 is connected to the upper surface of the main body 22a. The supply pipe 24 is provided with a pump 25 as a pressure feeding device. The resist solution from the supply source 23 is supplied to the resist solution discharge nozzle 22 by the pump 25 through the supply pipe 24, and the resist solution supplied to the resist solution discharge nozzle 22 passes downward from the discharge hole 22c through the main body portion 22a and the tip portion 22b. It is discharged toward. Note that a plurality of discharge holes 22 c may be formed in the resist solution discharge nozzle 22.

  For example, the operation of the pump 25 is controlled by the pump control unit 26. A supply pressure of the pump 25 is set in the pump control unit 26, and the pump 25 can pump the resist solution to the resist solution discharge nozzle 22 according to the set supply pressure.

  For example, a thermocouple 30 as a temperature detection member is attached to the inner peripheral surface of the discharge hole 22 c of the resist solution discharge nozzle 22. The thermocouple 30 can detect the temperature of the resist solution immediately before and during the discharge from the resist solution discharge nozzle 22. The thermocouple 30 is connected to a main control unit 32 as a control unit by, for example, a connection line 31. The connection line 31 passes through, for example, the tip portion 22b of the resist solution discharge nozzle 22 and the wall portion 22d of the main body portion 22a, and exits from, for example, the upper portion of the main body portion 22a. With this connection line 31, the detection result by the thermocouple 30 can be output to the main control unit 32.

  The main control unit 32 monitors the temperature of the resist solution in the resist solution discharge nozzle 22 output from the thermocouple 30. For example, when a temperature outside a predetermined allowable range (threshold) is detected, the detection is performed. A command to change the set supply pressure can be output to the pump control unit 26 based on the set temperature. At this time, the main control unit 32 calculates the viscosity of the resist solution from, for example, the detected temperature result, and a desired discharge amount of the resist solution is discharged from the resist solution discharge nozzle 22 based on the viscosity of the resist solution. Thus, the optimum supply pressure of the pump 25 can be calculated. The main control unit 32 can output the calculated optimum supply pressure to the pump control unit 26 and change the set supply pressure of the pump 25 set in the pump control unit 26. The pump control unit 26 can operate the pump 25 according to the changed set supply pressure. Note that the calculation of the viscosity based on the temperature of the resist solution and the calculation of the optimum supply pressure based on the viscosity are performed using correlation data and logical expressions acquired in advance through experiments.

  For example, as shown in FIG. 1, the resist solution discharge nozzle 22 is attached to a slider 41 by a holder 40, and the slider 41 is fixed to a drive belt 42. The drive belt 42 extends, for example, along the X direction, and is hung between a drive pulley 43 and a driven pulley 44 provided on both side walls of the housing 2 in the X direction. The drive belt 42 can be driven by a drive source 45 of a drive pulley 43. By driving the drive belt 42, the resist solution discharge nozzle 22 can reciprocate in the X direction in the slit 21. Therefore, the resist solution discharge nozzle 22 can discharge the resist solution while reciprocating in the X direction with respect to the wafer W that intermittently moves in the Y direction below the slit 21 by the XY stage 4. The operation such as the moving speed of the resist solution discharge nozzle 22 is controlled by a control device (not shown) that outputs an operation command to the drive source 45.

  As shown in FIG. 1, between the wafer W held on the chuck 3 and the top plate 20, the resist solution is ejected from the resist solution ejection nozzle 22 to the vicinity of the end of the wafer W at a position facing the slit 21. A pair of mask members 50 and 51 for receiving the resist solution are disposed. The mask members 50 and 51 are formed in a flat plate shape, for example, and a drain pipe (not shown) for discharging the received resist solution is connected to the surface of the mask members 50 and 51. For example, the mask member 50 is supported by a support member 52 attached to the side wall of the housing 2 on the positive side in the X direction, and can be moved along the X direction by a mask driving unit 53 such as a cylinder or a motor. The mask member 51 is supported by a support member 54 attached to the side wall on the negative side in the X direction of the housing 2, and can be moved along the X direction by the mask driving unit 55. With this configuration, the distance between the mask members 50 and 51 can be adjusted so that the mask members 50 and 51 can be positioned near both ends of the wafer W that passes under the slit 21. Then, the resist solution discharged from the resist solution discharge nozzle 22 is applied to the outer edge portion of the wafer W, and for example, the resist solution can be prevented from flowing around the back surface of the wafer W or dripping from the wafer W.

  As shown in FIG. 2, the loading / unloading port 8 attached to the side wall of the housing 2 is provided with a shutter 60, so that outside air can be prevented from flowing into the processing chamber S from the loading / unloading port 8. As shown in FIG. 1, an exhaust pipe 61 is connected to the lower surface of the housing 2 so that the atmosphere in the processing chamber S can be exhausted as necessary.

  Next, the application | coating process performed with the coating device 1 comprised as mentioned above is demonstrated. First, the wafer W is loaded into the coating apparatus 1 through the loading / unloading port 8 and sucked and held by the chuck 3. Subsequently, the chuck 3 moves to the positive side in the X direction, and the wafer W is moved to the center of the housing 2 as shown in FIG.

  Next, the chuck 3 moves in the positive direction of the Y direction. For example, the end of the wafer W on the positive side in the Y direction is positioned below the slit 21. Then, the resist solution discharge nozzle 22 in the slit 21 starts to reciprocate along the X direction, and the resist solution starts to be discharged from the resist solution discharge nozzle 22. At this time, the resist solution is supplied into the resist solution discharge nozzle 22 by the pump 25 at a predetermined supply pressure, and is discharged from the discharge hole 22 c of the resist solution discharge nozzle 22.

  When the reciprocating movement of the resist solution discharge nozzle 22 and the discharge of the resist solution are started, for example, as shown in FIG. 4, the wafer W moves intermittently by a predetermined distance in the positive direction of the Y direction. That is, for example, the resist solution discharge nozzle 22 moves from the outside of the end of the wafer W on the negative side in the X direction to the outside of the end of the wafer W on the positive side in the X direction. When the resist solution is linearly supplied onto the surface, the wafer W is moved a predetermined distance in the Y direction positive direction side, and the resist solution application position is shifted. Then, the resist solution discharge nozzle 22 moves toward the negative side in the X direction opposite to the previous one, and the resist solution is linearly supplied onto the surface of the wafer W. When the resist solution discharge nozzle 22 reaches the outside of the negative direction side of the wafer W again in the X direction, the wafer W is again moved a predetermined distance in the positive direction of the Y direction, and the application position of the resist solution is shifted. By repeating this operation, the resist solution is applied to the surface of the wafer W in parallel lines. Finally, the resist solution is applied to the entire surface of the wafer W.

  While the resist solution is applied to the wafer W, the mask members 50 and 51 are appropriately moved so that they are always positioned on both ends of the wafer W in the X direction. This prevents the resist solution from dropping from the outside of the wafer W.

  FIG. 5 shows a flow of a process for adjusting the supply pressure of the pump 25 performed when the resist solution is applied to the wafer W. While the resist solution discharge nozzle 22 reciprocates on the wafer W while discharging the resist solution, the temperature of the resist solution passing through the discharge hole 22c is detected by the thermocouple 30. The main control unit 32 constantly monitors the temperature detection result by the thermocouple 30. During application of the resist solution, if the temperature of the resist solution deviates from an allowable range, for example, a range of ± 2 ° C. of 23 ° C. which is the set temperature of the resist solution, the main control unit 32 determines the resist solution at that time The viscosity of the resist solution is calculated from the temperature, and the set supply pressure of the pump 25 for obtaining a desired discharge amount is calculated based on the viscosity. At this time, for example, when the temperature of the resist solution decreases, the viscosity increases and the discharge amount decreases, so that the calculated supply pressure increases. Conversely, when the temperature of the resist solution rises, the viscosity decreases and the discharge amount increases, so that the calculated supply pressure decreases. Thus, when the appropriate supply pressure is calculated, the new supply pressure is output from the main control unit 32 to the pump control unit 26, and the pump control unit 26 changes the set supply pressure to the new supply pressure. Then, the resist solution is supplied from the pump 25 at the corrected supply pressure. By repeatedly adjusting the supply pressure of the pump 25, the discharge amount of the resist solution discharged from the resist solution discharge nozzle 22 is always kept constant, and the resist solution is uniformly applied onto the wafer W. .

  According to the above embodiment, the resist solution discharge nozzle 22 is provided with the thermocouple 30, the temperature of the resist solution immediately before being discharged from the resist solution discharge nozzle 22 is detected, and the resist solution discharge nozzle 22 is based on the temperature. The resist solution supply pressure was adjusted. Therefore, even when the resist solution temperature in the resist solution discharge nozzle 22 fluctuates as the resist solution discharge nozzle 22 moves or stops, and the viscosity of the resist solution fluctuates, the resist solution discharge nozzle 22 discharges the resist solution. The amount of resist solution discharged can be kept constant. As a result, the resist solution is evenly supplied within the wafer surface, and a resist film having a certain thickness is formed on the wafer W.

  Since the thermocouple 30 is attached to the inner surface of the discharge hole 22c of the resist solution discharge nozzle 22, the temperature of the resist solution immediately before being discharged from the resist solution discharge nozzle 22 can be detected appropriately. Therefore, the pump supply pressure can be adjusted more accurately based on the temperature of the resist solution.

  Since the connection line 31 of the thermocouple 30 is arranged so as to pass through the inside of the wall portion 22d of the resist solution discharge nozzle 22, for example, compared to the case where the connection line 31 is arranged in the flow path of the resist solution discharge nozzle 22 Contamination in the liquid discharge nozzle 22 is suppressed. Further, the resist solution discharge nozzle 22 can be moved more smoothly than when the connection line 31 is arranged outside the resist solution discharge nozzle 22.

  In the above embodiment, the thermocouple 30 is attached to the discharge hole 22c of the resist solution discharge nozzle 22 as described above. However, the attachment position of the thermocouple 30 is not limited thereto, and the resist in the resist solution discharge nozzle 22 is not limited thereto. It may be another position of the liquid flow path. For example, as shown in FIG. 6, the resist solution discharge nozzle 22 may be attached to the inner wall surface of the tip 22 a. Even in such a case, the temperature of the resist solution immediately before discharge can be detected appropriately.

  The adjustment of the supply pressure of the pump 25 described in the above embodiment may be performed each time the resist solution discharge nozzle 22 moves from the outer side on one end side of the wafer W to the outer side on the other end side. . For example, when the resist solution discharge nozzle 22 moves on the surface of the wafer W and reaches the outside of the end portion of the wafer W, whether or not the detection temperature of the resist solution by the thermocouple 30 is within an allowable range at the time of the movement. Is judged. When the temperature of the resist solution is within the allowable range, the supply pressure of the pump 25 is not changed, and when the resist solution discharge nozzle 22 is moved next, the discharge of the resist solution from the resist solution discharge nozzle 22 is as follows. Performed at the same supply pressure. When the temperature of the resist solution exceeds the allowable range, the supply pressure of the pump 25 is changed, and the discharge of the resist solution during the next movement of the resist solution discharge nozzle 22 is performed with the changed supply pressure. In this manner, by adjusting the supply pressure of the pump 25 for each movement of the resist solution discharge nozzle 22, for example, the timing at which the supply pressure of the resist solution is changed can be made uniform. Further, since the supply pressure is adjusted in a short cycle, the resist solution can be applied uniformly. The supply pressure of the pump 25 may be adjusted every time the resist solution discharge nozzle 22 reciprocates a predetermined number of times.

  In the above example, the supply pressure of the pump 25 may be changed when the resist solution discharge nozzle 22 is not on the surface of the wafer W. For example, the supply pressure of the pump 25 is changed outside the end portion of the resist solution discharge nozzle 22 wafer W, and is performed when the resist solution discharge nozzle 22 is turned back. By doing so, the supply pressure is not changed when the resist solution discharge nozzle 22 is discharging the resist solution onto the surface of the wafer W. Therefore, for example, even if the discharge amount of the resist solution becomes unstable for a moment when the supply pressure is changed, the resist solution of that discharge amount is not supplied onto the wafer W.

  In the above embodiment, the supply pressure of the pump 25 is adjusted based on the detected temperature of the resist solution. However, based on the detected temperature, the wafer W is intermittently moved in the positive direction in the Y direction. The movement distance may be adjusted. In such a case, for example, when the temperature of the resist solution outside the allowable range is detected by the thermocouple 30, the temperature information is output to the main control unit 32, for example. In the main control unit 32, for example, the discharge amount (discharge rate) of the resist solution actually discharged from the resist solution discharge nozzle 22 at the temperature of the resist solution is calculated, and on the wafer surface based on the calculated discharge amount. The optimal movement distance of the wafer W in the positive Y direction is calculated so that the amount of resist solution applied per unit area becomes constant. Then, the next wafer W is intermittently moved in the positive direction of the Y direction at the calculated movement distance. In such a case, by adjusting the feeding distance of the wafer W based on the temperature of the resist solution, the resist solution can finally be uniformly applied within the wafer surface. Note that the adjustment of the movement distance of the wafer W in this example may be performed with a predetermined number of movements as one unit. Further, instead of adjusting the distance of the intermittent movement of the wafer W in the Y direction as in this example, the moving speed of the resist solution discharge nozzle 22 in the X direction may be changed. Furthermore, both the distance of the intermittent movement of the wafer in the Y direction and the moving speed of the resist solution discharge nozzle 22 in the X direction may be changed.

  In the above embodiment, the supply pressure of the pump 25 is adjusted based on the temperature of the resist solution in the resist solution discharge nozzle 22, but the supply pressure of the pump 25 is adjusted based on the temperature in the processing chamber S. Also good. FIG. 7 shows such an example. For example, a temperature detection member 70 that detects the temperature in the processing chamber S is attached to the inner wall of the housing 2. The detection result of the temperature detection member 70 can be output to the main controller 32, for example.

  The main control unit 32 monitors the temperature in the processing chamber S output from the temperature detection member 70, and when, for example, a temperature outside a predetermined allowable range (threshold), for example, 23 ° C. ± 2 ° C. is detected. Based on the detected temperature, a command for changing the set supply pressure can be output to the pump control unit 26. The main control unit 32 predicts, for example, the application state when the resist solution is supplied onto the wafer W under the detected temperature result, and applies the resist solution within the wafer surface based on the prediction. The optimum supply pressure of the pump 25 can be calculated so that the amount becomes constant. The main control unit 32 can output the calculated optimum supply pressure to the pump control unit 26 and change the set supply pressure in the pump control unit 26. The pump control unit 26 can operate the pump 25 according to the changed set supply pressure. In addition, the application state of the resist solution at each temperature, the optimum supply pressure at that time, and the like are derived using data acquired through experiments in advance.

  For example, when the resist solution discharge nozzle 22 reciprocates in the X direction and the resist solution is applied to the wafer W, for example, when the temperature in the processing chamber S rises and falls outside the allowable range, for example, Since the evaporation amount of the resist solution is increased and the amount of the resist solution applied onto the wafer W is decreased from the normal state, the set supply pressure of the pump 25 is changed to an optimum supply pressure higher than usual, for example. Further, when the temperature in the processing chamber S falls and falls outside the allowable range, for example, the evaporation amount of the resist solution decreases and the amount of the resist solution on the wafer W increases from the normal state. The set supply pressure of the pump 25 is changed to an optimal supply pressure that is lower than the original value. By doing so, the resist solution is finally uniformly applied on the wafer W within the wafer surface.

  In this example, on the basis of the temperature in the processing chamber S, the distance of intermittent movement of the wafer W in the Y direction during resist solution application and the moving speed of the resist solution discharge nozzle 22 in the X direction are changed. May be. Further, the temperature detection member 70 may be provided at a plurality of locations in the processing chamber S. Furthermore, the temperature detection member 70 may be attached to the chuck 3, the mask members 50 and 51, and the top plate 20 that are closer to the wafer W, for example.

  The above embodiment shows an example of the present invention, and the present invention is not limited to this example and can take various forms. In the above embodiment, the resist solution is applied in a rectangular wave shape to the surface of the wafer W. However, the present invention is also applied when the resist solution is applied spirally to the surface of the wafer W, for example. it can. The present invention can also be applied when the resist solution is applied through another route. Furthermore, the present invention can also be applied to a coating apparatus that coats the wafer W with a coating solution other than the resist solution, for example, a coating solution for forming an SOD, SOG (Spin on Glass) film or the like. In the embodiment described above, the coating liquid is applied to the wafer W. However, the present invention is also applicable to a coating apparatus for other substrates such as an LCD and a mask reticle for a photomask other than the wafer. it can.

  INDUSTRIAL APPLICABILITY The present invention is useful for applying a coating liquid evenly within a substrate surface in a coating apparatus that applies a coating liquid to a substrate while the coating liquid discharge nozzle moves.

It is explanatory drawing of the longitudinal cross-section which shows the outline of a structure of a coating device. It is explanatory drawing of the cross section which shows the outline of a structure of a coating device. It is explanatory drawing which shows the structure of a resist liquid discharge nozzle typically. It is explanatory drawing which shows the state which the resist liquid discharge nozzle discharges the resist liquid to a wafer. It is a flowchart of the process at the time of adjusting the supply pressure of a pump. It is explanatory drawing which shows the structure of the resist liquid discharge nozzle at the time of providing a thermocouple in a front-end | tip part. It is explanatory drawing of the longitudinal cross-section which shows the outline of a structure of the coating device provided with the temperature detection member.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Coating apparatus 3 Chuck 22 Resist liquid discharge nozzle 30 Thermocouple 25 Pump 26 Pump control part 32 Main control part W Wafer

Claims (12)

A coating device for coating a substrate with a coating solution,
A holding member for holding the substrate;
A coating liquid discharge nozzle that linearly discharges the coating liquid onto the substrate while moving along the surface of the substrate held on the substrate held by the holding member;
A pumping device that pumps the coating liquid at a predetermined pressure to the coating liquid discharge nozzle;
A temperature detection member for detecting the temperature of the coating liquid in the coating liquid discharge nozzle;
And a controller that adjusts the supply pressure of the coating liquid in the pressure feeding device based on the temperature of the coating liquid detected by the temperature detection member. The coating liquid discharge nozzle has a tip portion from which the coating liquid is discharged,
2. The coating apparatus according to claim 1, wherein the temperature detection member is provided in a flow path of the coating liquid in the tip portion. A coating liquid discharge hole is formed at the tip of the coating liquid discharge nozzle,
The said temperature detection member is attached to the inner surface of the said discharge hole, The coating device of Claim 2 characterized by the above-mentioned. 4. The coating according to claim 1, wherein the connection line connected to the temperature detection member passes through an inside of a wall portion that forms an outer shape of the coating liquid discharge nozzle. apparatus. A coating apparatus for applying a coating solution to a substrate in a processing chamber,
A holding member for holding a substrate in the processing chamber;
A coating liquid discharge nozzle that linearly discharges the coating liquid onto the substrate while moving along the surface of the substrate held on the substrate held by the holding member;
A temperature detecting member for detecting the temperature in the processing chamber;
And a controller that adjusts the supply pressure of the coating liquid in the pressure feeding device based on the temperature in the processing chamber detected by the temperature detection member. The coating liquid discharge nozzle is reciprocated in one horizontal direction on the surface of the substrate held by the holding member, and the coating liquid discharge nozzle and the holding member are moved to another horizontal direction perpendicular to the one horizontal direction. The coating apparatus according to claim 1, further comprising a moving mechanism that relatively moves in a direction. A coating method in which a coating liquid is applied to a substrate by ejecting the coating liquid from the coating liquid ejection nozzle to the substrate linearly while moving the coating liquid ejection nozzle along the surface of the substrate on the substrate. There,
Measure the temperature of the coating liquid immediately before being discharged from the coating liquid discharge nozzle,
A coating method comprising adjusting a supply pressure of the coating liquid supplied to the coating liquid discharge nozzle based on the measured temperature of the coating liquid. A coating method in which a coating liquid is applied to a substrate by discharging a coating liquid linearly onto the substrate while a coating liquid discharge nozzle moves on the substrate along the surface of the substrate in a processing chamber,
A coating method, comprising: measuring a temperature in the processing chamber and adjusting a supply pressure of the coating liquid supplied to the coating liquid discharge nozzle based on the temperature. When the coating liquid discharge nozzle moves while discharging the coating liquid, the temperature is measured,
9. The coating method according to claim 7, wherein when the measured temperature exceeds a predetermined threshold, the supply pressure of the coating liquid is changed. The coating liquid discharge nozzle that discharges the coating liquid is reciprocated in one horizontal direction from the outside on one end side of the substrate to the outside on the other end side, and the coating liquid discharging nozzle and the substrate are further moved. The coating liquid is applied to the entire surface of the substrate by intermittently moving relative to the other horizontal direction perpendicular to the one horizontal direction,
The adjustment of the supply pressure of the coating liquid is performed each time the coating liquid discharge nozzle moves from the outer side on the one end portion side to the outer side on the other end side of the substrate. The coating method as described. The coating method according to claim 10, wherein the supply pressure of the coating liquid is changed when the coating liquid discharge nozzle is not on the surface of the substrate. While the coating liquid discharge nozzle is reciprocated along the surface of the substrate in one horizontal direction on the substrate, the coating liquid is linearly discharged from the coating liquid discharge nozzle to the substrate. A coating method in which a coating solution is applied to the entire surface of a substrate by intermittently moving the substrate relative to another horizontal direction perpendicular to the one horizontal direction,
Measure the temperature of the coating liquid immediately before being discharged from the coating liquid discharge nozzle,
A coating method comprising adjusting a distance of intermittent relative movement between the coating liquid discharge nozzle and the substrate based on the measured temperature of the coating liquid.

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