JP2005258376A - Micro and nano-device system, self-organizing optical network, and molecular nano-duplicating method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To improve the productivity of a micro and nano-device system by making the density thereof high and introducing Molecular Nano-duplication (MND) having a molecule-scale duplicating function. <P>SOLUTION: This micro and nano-device system is composed of a microminiature optical device having integrated circuits stacked. Consequently, the micro and nano-device can be made high in density and the degree of freedom of electric control of the microminiature optical device can be increased. The high density is easily realized by simplifying a self-organizing optical network forming process. Further, a method for manufacturing the micro and nano-device system includes a stage of forming a growth part by supplying molecules to a base body and transplanting at least a portion of the growth part to another base. Consequently, the MND having the molecule-scale duplicating function is realized to improve the productivity of the device system structured on the micro and nano-scale, and also to integrate the micro and nano-device system. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

Detailed Description of the Invention

  The present invention relates to a micro / nano device system in which thin film electronic elements, thin film optical elements, bio elements and the like are integrated at high density, and in particular, nonlinear optical properties, light emitting properties, light absorbing properties, light transmitting properties, conductive properties, semiconductors, and the like. Device system that is electrically connected to a thin film integrated circuit by forming an electrode in a photonic crystal structure or a strong confinement optical circuit having functions such as conductivity and insulation, and a predetermined electrode is formed in a slab waveguide having a nonlinear optical effect Optical switch with Add function, device / system automatically formed by an optical network by applying external stimulus, device / system with a high degree of freedom by irradiating light at a predetermined angle / direction, processing region And / or transfer / reproduce all or part of the growth part selectively grown using a seed core having molecules on the surface to another support Process "Molecular Nano-Duplication (MND)" and thereby a micro / nano device system constructed, self-aligned optical network to a device system that automatically formed by the write beam side irradiation.

  In recent years, micro / nano device systems that have miniaturized and highly integrated optoelectronic systems and biosystems have appeared. Examples include photonic crystals and highly confined optical waveguides in which patterns processed by submicron cycles are arranged, and ultrafine waveguides and filters are realized. In order to perform electro-optic (EO) control of the photonic crystal, the concept of variable well optical IC was introduced, and a microelectrode array corresponding to the lattice point of the photonic crystal was formed on a slab waveguide having a nonlinear optical effect. Formed photonic crystals have been proposed. In addition, it is a kind of variable well optical IC, and is divided into waveguide prism deflector type micro optical switch (WPD-MOS) and waveguide shaped electrodes, which are formed by forming prism type electrodes on a slab waveguide having a nonlinear optical effect. An optical switch is proposed (see Non-Patent Document 1, for example). In addition, aiming to reduce the cost of optical systems and modules, a material whose refractive index is increased by light irradiation is arranged between the optical elements, the optical elements are irradiated with light from the outside, and the self-organized optical network by the generated fluorescence A technique for forming (SOLNET) has been proposed. In addition, a reflective SOLNET technique has been proposed that, when forming a SOLNET, performs a process of reflecting write light on the end face of one element, and produces the same effect as double-sided irradiation by writing light irradiation from one side (for example, Non-patent documents 1 and 2). Further, a technique has been proposed in which light is incident on a photosensitive material layer in a predetermined direction and various structures such as a 45 ° mirror / filter of an optical waveguide can be formed with a high degree of freedom. In addition, a system is constructed in a self-organized manner by supplying molecules to a substrate on which a processing region and / or a seed core is selectively formed in a desired arrangement and selectively growing films having different thicknesses, orientations, and physical properties. Is planned. In addition, as a future technology, ideas such as nanodevices and molecular elements to be given a function on a molecular scale have been proposed. Research on bioelements such as DNA chips and biochips is also becoming active. In addition, optoelectronic microdevices / systems in which thin film electronic / optical elements are integrated at a high density have been proposed for cost reduction and resource saving. For example, S-FOLM (Scalable Film Optical Link Multi-chip module), 3-Dimensional Micro Switching System (3D-MOSS), 3D Stack Optoelectronic System, etc. Space saving by the stack structure, noise reduction by shortening the metal wiring length, and cost reduction by the scalability unique to the film laminate structure are realized. A 3D-MOSS in which a high-speed optical switch and a driving integrated circuit are three-dimensionally integrated has a possibility of large-scale high-speed optical switching. In addition, as a method for realizing a micro / nano device system using molecular nanotechnology, Molecular Layer Deposition (MLD) has been developed that enables molecular arrangement and orientation in molecular units by controlling the arrangement of molecules one by one ( For example, see Non-Patent Documents 3 and 4).

However, in the conventional micro / nano system, there is no optical switch having an Add function, and the electrical control of the photonic crystal and the strong confinement optical circuit for realizing the micro optical device cannot be freely performed. The micro / nano device system There is a limit to the simple formation of SOLNET, which is useful for self-organization of inter-element and inter-layer optical wiring, and there is no simple manufacturing method such as a waveguide with a complicated structure such as an optical waveguide with a 45 ° mirror. / There were problems such as low productivity of devices and systems constructed at the nanoscale.
T.A. Yoshimura, M .; Ojima, Y .; Arai, and K.A. Asama, “Three-Dimensional Self-Organized Micro Optoelectronic Systems for Board-Level Reconfigurable Optical Interconnect--Performance E Modal E-Il. Select. Topics in Quantum Electron. vol. 9, no. 2, pp. 492-511, 2003. T.A. Yoshimura, J. et al. Roman, Y. et al. Takahashi, W.H. V. Wang, M.M. Inao, T .; Ishituka, K .; Tsukamoto, K. et al. Motoyoshi, and W.H. Sotoyama, “Self-Organizing Lightwave Network (SOLNET) and Its Application to Film Optical Circuit Substrates,” IEEE Trans. Comp. , Packag. Technol. Vol. 24, pp. 500-509, 2001. T.A. Yoshimura, S .; Tatsuura, and W.H. Sotoyama, "Polymer films formed with monolayer growth steps by molecular layer deposition," Appl. Phys. Lett. Vol. 59, pp. 482-484, 1991. T.A. Yoshimura, S .; Tatsuura, W .; Sotoyama, A .; Matsuura, and T.M. Hayano, “Quantum wire and dot formation by chemical vapor deposition and molecular layer deposition of one-dimensional conjugated polymer,” Appl. Phys. Lett. Vol. 60, pp. 268-270, 1992.

Problems to be solved by the invention

  An object of the present invention is to increase the density of micro / nano device systems and increase the degree of freedom in electrical control of micro optical devices. Another object of the present invention is to realize an optical switch having an Add function in addition to Cross and Bar. Another object of the present invention is to make it easier to form a SOLNET useful for self-organization of elements and interlayer optical wiring. Another object of the present invention is to increase the degree of freedom of structure that can be formed in a micro / nano device system. Another object of the present invention is an analogy of DNA replication function, which improves the productivity of device / system constructed at micro / nano scale by introducing Molecular Nano-Duplication (MND) with molecular scale replication function. There is to make it. Furthermore, the element constructed by the micro / nano scale is arranged by the molecular scale SORT method, and the micro / nano device system is highly integrated.

Means for solving the problem

  The optoelectronic micro / nano device according to the first aspect of the present invention is a material having at least one property selected from nonlinear optical properties, light-emitting properties, light-absorbing properties, light-transmitting properties, conductive properties, semiconducting properties, and insulating properties. A photonic crystal having a microelectrode formed adjacent to the lattice region and / or a region other than the lattice region, and an integrated circuit stacked on the photonic crystal. To do. In addition, at least a part of the structure has a material having at least one property selected from nonlinear optical properties, light-emitting properties, light-absorbing properties, light-transmitting properties, conductive properties, semiconducting properties, and insulating properties, and the core region and / or Alternatively, a strong confinement optical circuit in which a microelectrode is formed in the vicinity of the cladding region and an integrated circuit stacked on the strong confinement optical circuit are provided. As a result, the density of the optoelectronic micro / nano device can be increased and the degree of freedom in electrical control of the micro optical device can be increased.

  An optical switch with an Add function according to a second aspect of the present invention has a slab waveguide having a nonlinear optical effect as at least a part of its structure, and a prism-shaped electrode formed close to the slab waveguide, and an input unit And a number of output units larger than the number of the input units, some of the output units are joined together, and a voltage is selectively applied to the prism-shaped electrode. Thereby, an optical switch capable of performing a Cross / Bar / Add operation can be realized.

  An optical switch with an Add function according to a third aspect of the present invention has a slab waveguide having a nonlinear optical effect as at least a part of its structure, and is formed into a waveguide shape electrode divided in proximity to the slab waveguide And having an input part and an output part, and a voltage is selectively applied to the waveguide-shaped electrode. Thereby, an optical switch capable of performing a Cross / Bar / Add operation can be realized.

  The optoelectronic micro / nano system according to the fourth aspect of the present invention is obtained by implanting and integrating the optoelectronic micro / nano device and / or the optical switch with an Add function according to the first to third aspects on another support. It is formed and includes at least the optoelectronic micro / nano device and / or an optical switch with an Add function. Thereby, an optoelectronic micro / nano system integrated with high density can be realized.

  In the self-organized optical network according to the fifth aspect of the present invention, a material having a refractive index increased by writing light irradiation is disposed between a plurality of optical elements, and at least one of the plurality of optical elements is externally provided. A self-organized optical network having a waveguide that emits light by the stimulating light of the above, and forming an optical path that connects the plurality of optical elements by irradiating the waveguide with light from the outside. The thickness is increased in at least a part of the stimulation light irradiation region. Thereby, a simple SOLNET formation method is realizable.

  In the self-organized optical network according to the sixth aspect of the present invention, a material having a refractive index increased by writing light irradiation is disposed between a plurality of optical elements, and at least one of the plurality of optical elements is externally provided. In a self-organizing optical network that has a waveguide that emits light by stimulating light of the above-mentioned structure and forms an optical path that connects the plurality of optical elements by irradiating the waveguide with light from outside, at least one of the stimulating light One is emitted from a thin film light emitting element provided in the vicinity of the light emitting waveguide. Thereby, a simple SOLNET formation method is realizable.

  In the self-organized optical network according to the seventh aspect of the present invention, a material whose refractive index is increased by irradiation of writing light is disposed between a plurality of optical elements, and the light emitted from at least one of the plurality of optical elements is output from the optical element. In the self-organized optical network that forms an optical path that connects the plurality of optical elements by incident light, at least one of the emitted light is emitted from a waveguide that emits light by current injection. Thereby, a simple SOLNET formation method is realizable.

  In the optoelectronic micro / nano system according to the eighth aspect of the present invention, light is incident on the photosensitive material layer at a specific angle and / or direction, or at a plurality of angles and / or directions, In an optoelectronic micro / nano system including a manufacturing process in which the photosensitive material is altered to form a structure, a laminated structure including photosensitive sheets having different physical properties or structures is formed, and at least a part of the light irradiation process includes It is performed after the formation of the laminated structure. Thereby, various micro / nano device system structures such as a mirror surface can be realized. In the above optoelectronic micro / nano system, after exposing a part of the photosensitive sheet, before developing, the writing light is propagated to the waveguide to irradiate the unexposed portion of the photosensitive sheet, and the self-organized waveguide By forming, a micro / nano system in which SOLNET is formed can be easily realized.

  In the above-described optoelectronic micro / nano system, the structure to be formed is a waveguide, and a part of the waveguide width is wider than other waveguide parts in the vicinity of the inclined surface structure and / or corner turning of the waveguide. As a result, a low-loss 45 ° mirror can be realized.

  The method of manufacturing a micro / nano device system according to the ninth aspect of the present invention includes a step of supplying a molecule to a substrate to form a growth portion, and transplanting at least a part of the growth portion to another support. It is characterized by including. As a result, it is possible to realize an MND having a molecular-scale replication function, to improve the productivity of a device system constructed on a micro / nano scale, and to integrate the micro / nano device system.

  In the method of manufacturing a micro / nano device system described above, after the growth portion is transplanted from the substrate to another support, molecules are supplied to the substrate to form a growth portion again, and at least of the growth portion formed again By including a step of transplanting a part to another support, it is possible to improve the productivity of the device system constructed on the micro / nano scale and to integrate the micro / nano device system.

  In the method of manufacturing a micro / nano device system, molecules are supplied to a substrate on which a processing region and / or a seed core is selectively formed in a desired arrangement, and a portion where the processing region and / or the seed core exists and other parts Increased productivity of micro / nano-scaled device systems and integration of micro / nano device systems by forming different thickness and / or orientation and / or physical properties can do.

  In the manufacturing method of the micro / nano device system described above, the micro / nano scale is constructed by forming a severable bond at the boundary between the growth part and the processing region and / or the seed core, or in the middle of the growth surface. Improvement of device system productivity and integration of micro / nano device systems can be realized.

  In the micro / nano device system manufacturing method described above, the breakable bond is broken by introducing molecules and / or atoms and / or ions that promote the breakage in a solution or in a gas phase. / Improvement of productivity of device / system constructed on nano scale and integration of micro / nano device / system can be realized.

  In the micro / nano device system manufacturing method described above, a device constructed on a micro / nano scale is obtained by dividing the growth part after bonding the support to the surface of the growth part or the region formed thereon. -System productivity can be improved and micro / nano device systems can be integrated.

  In the micro / nano device system manufacturing method described above, at least one of the elements included in the micro / nano device system is a grating, photonic crystal, optical wiring path, optical switch, variable wavelength filter, wavelength conversion element, light emission It can be an element selected from the group consisting of an element, a light receiving element, a filter, a mirror, a prism, a lens, a hologram, an optical amplifier, an optical memory, an electrical wiring path, a transistor, and a bio element.

  In the micro / nano device system manufacturing method described above, the growth part is formed by a method selected from organic CVD, vapor deposition polymerization, molecular layer deposition (MLD), and solution MLD, and is constructed on a micro / nano scale. It is possible to improve the productivity of the manufactured device system and to integrate the micro / nano device system.

  In the reflective self-organizing optical network according to the tenth aspect of the present invention, the reflection part of the input and / or output end of the optical element is curved, or the reflectivity with respect to the write light of the input and / or output end A plurality of the optical elements having a higher than that of the periphery thereof are installed, or at least one of the optical elements having a higher reflectance with respect to the writing light at the input and / or output ends is a laser diode, VCSEL , A photodetector, an optical switch, an optical modulator, an optical amplifier element, a wavelength conversion element, a wavelength filter, a photonic crystal, or a plurality of optical waveguide layers laminated three-dimensionally, and the optical waveguide layer At least one of them has a reflector that changes the optical path of the guided light to the outside of the layer, and the wavelength filter has a high reflectivity for the writing light. Is formed in the vicinity of the reflector, or at least one of the optical elements is a photonic crystal, and an increase in reflectance with respect to writing light at its input and / or output is caused by modulation of the photonic crystal structure. And Thereby, a simple SOLNET formation method is realizable.

  The present embodiment will be described below with reference to the drawings. In each figure, the same reference numerals denote the same elements, and duplicate descriptions are omitted. The following description explains an embodiment to which the present invention can be applied, and the scope of the present invention is not limited to this description. For clarity of explanation, the following description is omitted and simplified as appropriate. Further, those skilled in the art will be able to easily change, add, and convert each element of the following embodiments within the scope of the present invention.

[First Embodiment]
FIG. 1 shows an example of an electrically controllable photonic crystal laminated with an integrated circuit according to the present invention. Substances having properties such as nonlinear optical properties, light-emitting properties, light-absorbing properties, light-transmitting properties, conductive properties, semiconducting properties, and insulating properties are formed in an array on the substrate 1 to form photonic crystals 2 (FIG. 1 ( b)). Each array or part of the array is provided with an electrode 3 and driven by a laminated thin film integrated circuit (IC) 7. In a photonic crystal of a type in which lattice points are removed (FIG. 1C), the electrodes are formed in an appropriate division pattern in a region other than the photonic crystal lattice points. The lattice defect portion becomes a waveguide. The IC and the photonic crystal are connected by a wiring 6 in the interface layer 5. When wiring in the interface layer requires a large number of driving wirings, fine wiring on the order of submicron to several microns can be achieved by applying multilayer wiring similar to LSI. The electrodes 3 are preferably driven independently one by one. In some cases, some groups may be grouped and driven together. For example, when the photonic crystal has an EO effect, by applying a voltage between the electrode 3 and the counter electrode 4, the refractive index changes, and the light propagation state can be controlled. A wavelength filter composed of defects in the photonic crystal becomes tunable because the resonance condition is changed by voltage application. In addition, it is possible to change the reflection characteristics by applying a voltage to realize the operation of an optical switch or an optical modulator. If the photonic crystal has light emission characteristics, current is injected into one or several photonic crystal lattice points or areas other than the photonic crystal lattice points to emit light, and light is propagated in the micro optical circuit. Can do. If the photonic crystal has absorptivity and semiconductivity, the light that has propagated through the fine optical circuit is received at one or several photonic crystal lattice points or areas other than the photonic crystal lattice points, and is converted into electrical signals. Can be converted. By integrating such functions, it is possible to increase the density of optoelectronic micro / nano devices and increase the degree of freedom in electrical control of micro optical devices.

  A similar function can be achieved by using a strong confinement optical circuit having a large core / clad refractive index difference or a strong confinement optical circuit made of a metal clad instead of the photonic crystal.

  As materials for photonic crystals and strong confinement optical circuits, organic materials by selective growth as described in the ninth embodiment, inorganic semiconductor materials such as III-V compounds, and glass materials such as rare earth doped glass are used. And dielectric materials such as Lithium Niobate (LN) and PLZT.

[Second Embodiment]
An optical switch with an Add function is important as an element that simplifies the architecture of a network switching system such as a photonic router. FIG. 2 shows an example of an optical switch with an Add function according to the present invention based on a waveguide prism deflection type micro optical switch (WPD-MOS). Here, for the sake of simplicity, an example of 2 × 2 switching is shown. The slab waveguide 11 includes an EO slab waveguide 12 having an EO effect, an input waveguide 9, and an Add waveguide 15. The waveguide is surrounded by the cladding 10. A waveguide lens 14 is formed in the slab waveguide 11 in order to collimate the guided light. Instead of the waveguide lens, it is possible to use a waveguide whose width is gradually increased in the vicinity of the connection portion with the slab waveguide. The EO slab waveguide 12 has a structure sandwiched between a counter electrode and prism type electrodes 13a and 13b. When it is necessary to extract the base mode, a mode extractor 16 is added. The operation principle is as follows. It is assumed that the signal light 17 having the wavelength λ1 is incident on the input-1 and the signal light 18 having the wavelength λ2 is incident on the input-2. If no voltage is applied to the prism type electrode, the Bar state is obtained, and if a voltage is applied to the prism type electrode, the Cross state is obtained. When a voltage is applied only to the prism-type electrode 13b, the signal lights 17 and 18 are both added to output -1. The signal light path in FIG. 2 shows this case. When a voltage is applied only to the prism-type electrode 13a, the signal lights 17 and 18 are both added to output-2. FIG. 3 shows a variation of the above switch. In this case, prism-type electrodes 13c and 13d are added on the output side. In addition, the number of waveguide lenses on the output side is increasing. If no voltage is applied to the prism type electrode, the Bar state is obtained, and if a voltage is applied to the prism type electrode, the Cross state is obtained. When a voltage is applied only to the prism-type electrodes 13b and 13d, the signal lights 17 and 18 are both added to output -1. The signal light path in FIG. 3 shows this case. When a voltage is applied only to the prism type electrodes 13a and 13c, the signal lights 17 and 18 are both added to the output -2. FIG. 4 shows another variation. Also in this case, prism-type electrodes 13c and 13d are added on the output side, and the number of waveguide lenses on the output side is increased. If a voltage is applied to the prism type electrode, the Bar state is obtained. If no voltage is applied to the prism type electrode, the Cross state is obtained. When a voltage is applied only to the prism type electrodes 13a and 13c, the signal lights 17 and 18 are both added to output -1. The signal light path in FIG. 4 shows this case. When a voltage is applied only to the prism-type electrodes 13b and 13d, the signal lights 17 and 18 are both added to output-2. The slab waveguide may be a full surface EO material. When the driving voltage is 12 V using an EO slab waveguide made of PLZT and having a thickness of 4 microns, switching can be performed with a switch length of about 300 μm to several mm. The number of channels may be three or more as well as two. In this case, the number of merging waveguides increases as the number of channels increases. The Add waveguide is not limited to a channel waveguide, and may be a slab waveguide provided with a waveguide lens, a mirror, a prism, and the like. Thereby, it is possible to reduce the crossing of the channel wirings.

[Third Embodiment]
FIG. 5 shows an example of an optical switch with an Add function according to the present invention based on a divided waveguide electrode micro-optical switch. It consists of an EO slab waveguide 12, an input waveguide 9, and an output waveguide 19. The EO slab waveguide has a structure sandwiched between a counter electrode and a divided waveguide shape type electrode 13e-o. It is assumed that the signal light 17 having the wavelength λ1 is incident on the input-1 and the signal light 18 having the wavelength λ2 is incident on the input-2. If a voltage is applied to the divided waveguide shape electrodes 13e, f, g, k, l, m, the Bar state, the divided waveguide shape electrodes 13e, h, i, j, g, k, n, o, m If a voltage is applied, it will be in a cross state. When a voltage is applied to the divided waveguide shape type electrodes 13e, f, g, k, n, i, j, the signal lights 17 and 18 are both added to output -1. The signal light path in FIG. 2 shows this case. When a voltage is applied to the divided waveguide shape type electrodes 13e, h, i, o, m, k, and l, the signal lights 17 and 18 are both added to output -2. The divided waveguide shape type electrode is not necessarily limited to a straight line, and may include a curved portion. As the EO material, the same material as the WPD-MOS can be used.

[Fourth Embodiment]
The optoelectronic micro / nano device and the optical switch with an Add function described in the first to third embodiments can be used individually, but a high density optoelectronic micro / nano system can be realized by integrating them. . As an example of an effective method of integration, there is a Photographic Packaging Selective Occupied Repeated Transfer (PL-Pack with SORT) (for example, see Non-Patent Document 1). Furthermore, by integrating other thin-film elements such as optical waveguides, light-emitting elements, light-receiving elements, wavelength conversion elements, optical switches, variable wavelength filters, optical memories, optical amplifiers, bio-elements, etc. Optoelectronic micro / nano system can be realized. For example, a system in which micro / nano devices such as optical interconnects and photonic routers are integrated can be constructed by connecting optoelectronic micro / nano devices with waveguides. In addition, a three-dimensional system such as a three-dimensional optical interconnect / photonic router can be constructed by connecting the stacked optoelectronic micro / nano devices with an optical Z-connection.

[Fifth Embodiment]
SOLNET is a technology for automatically forming an optical waveguide between optical devices having misalignment, Optical Z-Connecton in a three-dimensional structure, or Free Space. The problem with SOLNET is that it is necessary to make writing light incident on the waveguide. In order to solve this problem, Phosphor SOLNET has been proposed in which writing light is incident on a waveguide doped with a phosphor from the outside and SOLNET is formed by light emission. The present invention is an improved version thereof.

  FIG. 6 shows an example of a Phosphor SOLNET according to the present invention. The width of the light emitting portion 21a doped with the phosphor of the waveguide 20 toward the photo-refractive (PR) material 22 (material whose refractive index increases by irradiation of the writing beam 24) is made wider than the width of the waveguide emitting portion. . Thereby, the irradiation area of the stimulation light 23a is widened, and the energy density at the emission part of the writing beam 24 can be increased. Similarly, the energy density of the writing beam can be increased by increasing the thickness of the light emitting portion. Thereby, the power required for SOLNET formation can be obtained with weaker stimulation light, and the SOLNET formation process can be simplified. The stimulus light is usually ultraviolet light. When a coumarin dye or the like that absorbs this is used for the phosphor, blue writing light can be obtained. If necessary, the self-organized waveguide formed by annealing or light irradiation is fixed. It is desirable to selectively irradiate the stimulation light in the vicinity of the light emitting portion with a mask pattern or a projection pattern. The present invention can also be applied to a planar two-dimensional system and a linear one-dimensional system. As the PR material, any substance can be used as long as the refractive index is changed by light irradiation. Examples include photosensitive polymers for holograms, Polyguide® materials from DuPont, photo-curable polymers, carbazole-doped acrylic and epoxy materials, and acrylic / epoxy mixed materials. The wavelength sensitivity can be adjusted by sensitization.

[Sixth Embodiment]
FIG. 7 shows another example of the improved structure of the Phosphor SOLNET according to the present invention. A thin film light emitting element is disposed adjacent to the light emitting portion 21a. For example, as a thin film light emitting element, an organic EL composed of an EL light emitting portion 21b and an electrode 23b can be used. A current is injected into this to emit light, and light generated in the waveguide thereby is used as writing light. By such a method, SOLNET formation can be performed only by passing a current, and the SOLNET formation process can be simplified.

[Seventh Embodiment]
FIG. 8 shows another example of the improved structure of the Phosphor SOLNET according to the present invention. A waveguide having EL characteristics is sandwiched between electrodes, and a current is passed to emit light, which is used as writing light. Thereby, SOLNET formation can be performed only by passing an electric current, and the process can be simplified. When a material composed of a polymer chain or an oligomer chain is used for the light emitting portion, it is desirable that the direction of the chain be perpendicular to or close to the electrode surface. The reason is that “the carrier mobility is increased by the chain orientation and the light emission efficiency is improved” and “the light emission is mainly emitted in the direction perpendicular to the chain, so that the light confinement efficiency for writing light into the waveguide is improved”. Is a point.

[Eighth Embodiment]
FIG. 9 shows a structure forming method using a photosensitive material according to the present invention. First, a light shielding layer 26 such as a metal film or a dielectric filter is selectively formed on the translucent substrate 25. A release layer 27 is formed thereon, and a base film 28 is further formed. Next, the photosensitive underclad sheet 29a, the core sheet 30a, and the overclad sheet 31a are laminated. By irradiating light 37 such as ultraviolet rays obliquely from the translucent substrate side, the photosensitive material is altered to produce an underclad sheet cured part 29b, a core sheet cured part 30b, and an overclad sheet cured part 31b. Form a structure with walls. In the case of partial exposure, Cover Mask-1 32a is arranged. The inclination of the wall can be widely controlled by the angle of incident light. If the exposure angle is ˜45 °, a 45 ° mirror / filter is obtained. Next, Cover Mask-2 32b is arranged and irradiated with light 37 such as ultraviolet rays at another angle from the translucent substrate side, underclad sheet curing part 29b, core sheet curing part 30b, and overclad sheet curing part 31b is generated. In the case of vertical exposure, a structure having a vertical wall is formed. Thereafter, a waveguide structure composed of an underclad 29c, a core 30c, and an overclad 31c is formed by development. A structure having an oblique wall can realize a mirror function by utilizing total reflection. If necessary, the mirror or filter 33 can be formed in a structure having diagonal walls. This is covered with a clad 34. The clad formation may be any method such as vapor deposition such as organic CVD, MLD, and vapor deposition polymerization, and wet deposition such as spin coating, dipping, and spraying. Further, the support substrate 35 is brought into close contact with the surface, and the release layer is removed to obtain the film waveguide 36. Examples of photosensitive film materials include acrylic, epoxy, imide, and silicone. The adhesive strength of the support substrate can be obtained by arranging, for example, a GelPak film. When polyvinyl alcohol is used for the release layer, it can be removed by immersion in a solvent such as water. After removing the release layer, the light-transmitting substrate with the light shielding layer can be reused. In order to increase the number of reuses, it is effective to form a coating thin film on a substrate with a light shielding layer.

  FIG. 9 shows an example of two-way exposure, but exposure in three or more directions is also possible. The waveguide / mirror / filter is taken as an example, but various structures such as a grating and a photonic crystal can be collectively formed. As the cover mask, any metal mask, resist pattern or the like that can appropriately block light can be used. It is also possible to partially select an exposure region by projection of patterned light and perform selective exposure equivalent to the cover mask. There is also a method in which a filter is applied to the light shielding film, and the transmission wavelength characteristics of the filter serving as the light shielding film are partially changed in accordance with the exposure pattern. Thereby, the selective exposure equivalent to the said cover mask can be performed by switching the wavelength of light. Further, utilizing the fact that the transmission characteristic of the wavelength filter depends on the incident angle of light, vertical light transmission / 45 ° light reflection is applied to the vertical exposure portion, and 45 ° light transmission / vertical light reflection is applied to the 45 ° exposure portion. By forming a simple filter as a light shielding film, partial exposure can be performed without a cover mask. In FIG. 9, the channel waveguide is taken as an example, but an inclined surface can be formed on a part of the slab waveguide. In addition, as an extended version of the diagonal cut pattern, light is incident at an oblique angle around a circular, elliptical, polygonal or specific island-shaped shading pattern, such as a cone, pyramid, or polygonal trapezoid It is also possible to form steric micro / nano structures. Conversely, the same can be done by making light incident at an oblique angle around a circular, elliptical, polygonal or specific island-like window pattern.

  Since the underclad / core / overclad sheet has photosensitivity, it can also be used for SOLNET formation. That is, after each sheet is exposed in a waveguide pattern shape and before development, writing light is propagated through the waveguide and emitted to an unexposed portion of the sheet to form a SOLNET. Thereafter, development is performed in a lump so that a portion that has been solidified by exposure and a SOLNET portion remain. Further, Phosphor SOLNET can be formed by imparting light emission characteristics to all or a part of the underclad sheet and the core sheet / overclad sheet (for example, by fluorescent molecule doping such as coumarin).

  In the foregoing, examples have been described in which a photosensitive material is exposed through a light shielding layer. However, the exposure method is not limited to this. A similar structure with a high degree of freedom can be obtained by arranging a mask on the photosensitive material layer instead of the light shielding layer and exposing through the mask. Furthermore, a higher degree of freedom can be realized by combining a mask and a light shielding layer and using exposure from both sides. Further, it is also possible to use projection exposure instead of mask exposure. As the photosensitive material, not only a photo-curable material but also a photorefractive material such as a hologram photopolymer or a PolyGuide material can be used. In this case, the side surface of the waveguide channel is originally covered with the cladding. In some cases, an etchable substrate such as Si, GaAs, KBr, NaCl, or glass can be used as the peeling layer, and the peeling process can be performed by substrate etching.

  By combining the above process with the PL-Pack with SORT method, an OE film in which thin film elements are embedded and integrated can be manufactured, and the constituent elements of S-FOLM can be supplied. In the process shown in FIG. 9, a release layer is inserted into a film, but a waveguide can be formed on the substrate without the release layer.

  FIG. 10 shows a variation example of the core pattern in the vicinity of the inclined core surface. The waveguide width near the inclined core surface is widened. With such a skirt structure, it is possible to prevent the mirror / filter surface from wrapping around and to reduce the scattering of propagating light. This method is also applicable to the corner turning mirror portion of the planar waveguide. In this case, the skirt is formed on the mirror side (outside of the bend) of the corner turning portion and forms a triangle with the mirror surface.

[Ninth Embodiment]
FIG. 11 shows an example of the Molecular Nano-Duplication (MND) method according to the present invention. A processing region and / or a seed core 41a is formed on the growth substrate 40 by patterning. A peeling part 42 and a growth part 43a are formed thereon. Growth portions having different thicknesses and / or orientations and / or physical properties are formed in the portion where the processing region and / or the seed core exists and the other portion. Next, the catch-up substrate 44 having the catch-up layer 45 is placed on the surface, and the growth portion is transplanted to the catch-up substrate by being separated by a peeling portion. The growth part may be used as a micro / nano device system in this state, or may be used after further processing and processing. Alternatively, the growth part can be transplanted to another substrate and integrated with other elements to construct a micro / nano device system. The catch-up substrate may be in direct contact with the surface of the growth portion, or a layer or pattern may be formed on the growth portion and may be in contact with the surface.

  FIG. 12 shows an example of MND for two types of growth parts. A processing region and / or seed core I 41 b and a processing region and / or seed core II 41 c are formed on the growth substrate 40 by patterning. On the processing region and / or the seed core I, a peeling portion and a growth portion I 43b are formed. A separation part and a growth part II 43c are formed on the processing region and / or the seed core II. Depending on the type of processing region and / or seed core, different thicknesses and / or orientations and / or physical growths are formed. Next, the catch-up substrate 44 is placed on the surface, and the growth portion is transplanted to the catch-up substrate by dividing at the peeling portion. The growth part functions in this state and may be used as a micro / nano device system, or may be used with further processes and processing. Alternatively, the growth part can be transplanted to another substrate and integrated with other elements to construct a micro / nano device system.

  In FIGS. 11 and 12, after the growth part is transplanted from the growth substrate to another substrate, the growth part is formed again on the growth substrate, and the regenerated growth part can be transplanted to the other substrate. Thereby, once the processing region and / or the seed core is formed, the growth portion can be automatically grown and replicated, and the production efficiency of the micro / nano device system can be increased. This is the origin of MND naming. A micro / nano device system usually includes a micro / nano-order fine pattern. Producing such a pattern each time is a waste of time and resources. In MND, once a fine pattern is formed, a micro / nano device system can be easily replicated by repeated growth / implantation. Micro / nano device systems include photonic crystals, gratings, waveguides, optical wiring paths, optical switches, variable wavelength filters, wavelength conversion elements, light emitting elements, light receiving elements, filters, mirrors, prisms, lenses, holograms, light Examples include an amplifier, an optical memory, an electrical wiring path, a transistor, and a bio element. The types of growing parts are not limited to one or two, and can be three or more.

An example of formation of a growth part using a processing region will be described below. For example, if the substrate is Si and the processing region is patterned SiO ₂ , and the terephthalaldehyde (TPA) and p-phenylenediamine (PPD) are introduced in a vacuum to form a film by organic CVD, vapor deposition polymerization, MLD, etc., polyazomethine is obtained. It grows selectively on SiO ₂ (see Non-Patent Documents 3 and 4 for details). The pressure at the time of introducing these molecules is generally about 10 ⁻⁴ −10 ⁻² Torr. Selectivity of selective growth can be adjusted by cooling and heating.

A seed core formed with a Self-Assembled Monolayer (SAM) can also be used as the processing region. For example, an Au thin film is formed on a glass substrate by patterning (via an adhesion layer such as Cr, if necessary), and this is formed, for example, by 11-Amino-1-undecanethiol hydride, 8-Amino-1-octanethiohydrochloride. By immersing in an ethanol solution of aminoalkanethiol such as 6-Amino-1-hexanethiol hydrochloride, SAM can be formed on the surface of Au, and an amino group is present on the upper end of the SAM. When a molecule (for example, TPA) that reacts with an amino group is introduced, it binds to SAM. Next, when a different type of molecule (eg PDA) is introduced, it binds onto TPA. Such reactive bonding is repeated, and a film is selectively grown on the SAM by the principle of vapor deposition polymerization, CVD, and MLD. As the SAM, there are various applicable materials other than the aminoalkanethiol. For example, a disulfide compound having a carboxyl group at the terminal or a disulfide compound having an NH ₃ active ester group at the terminal can be used. In the former, by introducing a molecule having an amino group, and in the latter, by introducing a molecule having a carboxyl group, an amide bond is formed and selective growth is started. Further, a hydrophilic surface is formed by a thiol compound having a hydroxyl group at a terminal, and a hydrophobic surface is formed by a thiol compound molecule having a hydrocarbon at a terminal, and selective growth using this is possible. In order to improve the optical transparency, for example, 2, 2 bis (3,4 phenylcarboxyl) hexafluoropropane dianhydride (6FDA) and 2, 2 bis (4 (4 asinophenoxy) phenyl) hexafluoropropane It is effective to grow fluorinated polyimide using (Bis-OAF).

  By making the SAM pattern into a photonic crystal shape, the photonic crystal is self-organized and built up. Both a photonic crystal consisting of an array of polymer pillars and a photonic crystal consisting of an array of holes in the polymer are possible.

It is also possible to form a tilted photonic crystal by tilting the substrate with respect to the molecular flow and growing the growth portion obliquely. It is also possible to form molecular chains oriented in the flow direction by tilting the flow of molecules to be supplied with respect to the surface of the treatment region. By utilizing this, a three-dimensional photonic crystal can be formed. The molecular chain can also be oriented using the SiO ₂ oblique deposition film as a treatment region. “T. Yoshimura et al., Jpn. J. Appl. Phys. Vol. 31, pp. L980-L982, 1992” is described in detail. By using such various alignment techniques in combination, the variation of the structure control of the growth film can be expanded. For example, refractive index modulation and dielectric constant modulation can be performed partially using the same material. By selectively blocking molecules, it is possible to form surfaces having various inclination angles and directions in one substrate.

  When different seed cores are required as shown in FIG. 12, different types of SAMs are selectively formed while selectively forming a patterned protective film. Alternatively, it is possible to use selective adsorption by applying a material other than Au, for example, Pt, Cu, various semiconductors, oxides, or the like as the base region. For the formation of nanoscale patterns, in addition to SPM lithography using nano-micromachining technology such as STM (Scanning Tunneling Microscope) and near-field optical system, photolithography using normal EB exposure and excimer laser exposure, Molecular-scale drawing methods such as dip pen nanotechnology are effective.

  As a method of supplying molecules to the seed core, a method of supplying reactive molecules in a gaseous state as well as a method of introducing reactive molecules in a gaseous state, such as vapor deposition polymerization or CVD, can be applied. In the former case, an MLD method in which a plurality of types of molecules are supplied in a specific order while switching, and in the latter case, a solution MLD method in which a plurality of types of molecules are supplied in a specific order while switching can be used. By these, it is possible to form a growth part in which the type and arrangement of molecules inside the molecular chain are modulated by changing the type of supply molecule. For example, a photonic crystal with a waveguide structure can be formed by a low refractive index region (fluorinated polyimide) / high refractive region (polyazomethine) / low refractive region (fluorinated polyimide) structure. By providing a molecular arrangement structure controlled in the molecular order inside the molecular chain, it is possible to control various physical properties such as nonlinear optical characteristics, control of light emission / light reception performance, and control of conductivity and p-type / n-type. . In the case of cyclic molecules such as phthalocyanine-based and porphyrin-based molecules, there are examples in which the molecules are horizontally stacked on the seed core surface.

  When the molecular chain has a molecular sensitive function, a photosensitive function, a pressure sensitive function, a temperature sensitive function, an electric shock function, a protein discrimination function, a molecular capture / conversion function, a light emitting function, a light absorbing function, etc., a bio element is formed. Alternatively, the above functions can be imparted to the base treatment film, that is, the SAM itself. Thereby, a biochip in which many functions are integrated can be realized. Furthermore, by integrating with electronic / optical elements as described above, a smart bio-based micro / nano device system having bio functions, signal processing / network functions, and the like can be realized.

Next, a method of separating the growth part from the growth substrate by providing a peeling part will be exemplified. In the first example, molecules are supplied onto the processing region and / or the seed core to form a separable bond, then a growth portion is formed, supported by a catch-up substrate, and then the separable bond is cut. Is the method. For example, an amide bond or an ester bond as shown in FIG. 13 can be used as a separable bond. The junction can be cut using hydrolysis. Hydrolysis is caused by exposing the peeled portion to an aqueous solution mixed with dilute hydrochloric acid and dilute sulfuric acid and containing H ⁺ . The cleavage of the amide bond (peptide bond) can proceed more efficiently by mixing an enzyme / catalyst such as pepsin into the aqueous solution adjusted in pH. Cutting is also possible by exposure to water vapor. After the peeling, it is possible to regenerate the growing part on the remaining processing region and / or the seed core and to replicate the growing part.

A more detailed example is shown in FIG. FIG. 14A shows the formation of SAMs such as 10-Carboxy-1-decanethiol, 7-Carboxy-1-hepanethiol, 5-Carboxy-1-pentanethiol on Au, and COOH on the surface of the processing region and / or seed core. This is an example in which a group is arranged. A peeling part is formed by allowing a molecule having two NH ₂ groups to fly thereon and forming an amide bond. An NH ₂ group is arranged on the outermost surface. Here, for example, when TPA is introduced, the NH ₂ group and the CHO group react to form a double bond. Thereafter, the growth portion can be formed by continuing the growth process using MLD, solution MLD, vapor deposition polymerization, organic CVD, or the like. Even when PMDA is used instead of TPA, the NH ₂ group reacts with PMDA, and the same process as described above is possible. Molecules with NCO groups react similarly with NH ₂ groups. FIG. 14B shows an example in which a COOH group is arranged on the surface of the treatment region and / or the seed core, a molecule having two OH groups is caused to fly there, and an exfoliation part is formed by creating an ester bond. is there. In this case, OH groups are arranged on the outermost surface. Thereafter, molecules capable of reacting with OH groups are introduced, and further, the growth part can be formed by continuing the growth process using MLD, solution MLD, vapor deposition polymerization, organic CVD, or the like. FIG. 14C shows an example in which a SAM such as aminoalkanethiol is formed on Au and NH ₂ groups are arranged on the surface of the processing region and / or the seed core. A peeling part is formed by allowing a molecule having two COOH groups to fly thereon and creating an amide bond. COOH groups are arranged on the outermost surface. Thereafter, a molecule capable of reacting with a COOH group is introduced, and further, a growth portion can be formed by continuing the growth process using MLD, solution MLD, vapor deposition polymerization, organic CVD, or the like. FIG. 14 (d) shows the formation of SAMs such as 11-Hydroxy-1-undecanethiol, 8-Hydroxy-1-octanethiol, 6-Hydroxy-1-hexanethiol on Au, and OH on the surface of the processing region and / or the seed core. This is an example in which a group is arranged. A peeling part is formed by allowing a molecule having two COOH groups to fly thereon and creating an ester bond. COOH groups are arranged on the outermost surface. Thereafter, a molecule capable of reacting with a COOH group is introduced, and further, a growth portion can be formed by continuing the growth process using MLD, solution MLD, vapor deposition polymerization, organic CVD, or the like. In the above example, the peeling portion is formed at the processing region and / or the boundary between the seed core and the growth portion. However, depending on the case, it may be formed in the growth portion.

  The second example is a method of forming a peeling portion with a weak bond, then forming a growth portion, and supporting it with a catch-up substrate, and then cutting the separable bond. In this case, it is necessary that the adhesive force between the growth part and the catch-up layer is stronger than the adhesive force between the processing region and / or the seed core and the growth part. For example, this condition can be satisfied when the bond between the processing region and / or the seed core and the growth part is caused by a weak mechanism such as van der Waals force.

As shown in the above example, the molecules capable of reacting differ depending on the type of group on the treatment region and / or the seed core surface. That is, when the surface is composed of COOH groups, it reacts with molecules having NH ₂ groups or OH groups, but does not react with molecules having COOH groups. When the surface is composed of NH ₂ groups, it reacts with molecules having COOH groups, but does not react with molecules having NH ₂ groups. Therefore, by forming a part of the processing region and / or the seed core as the NH ₂ group surface and a part as the COOH group surface, it is possible to selectively form the growth part. For example, a molecule having a COOH group is allowed to fly and selectively bond (amide bond) to the surface of the NH ₂ group. Next, a molecule having an NH ₂ group is allowed to fly and selectively bond (ester bond) to the surface of the COOH group. As a result, different kinds of growth portions are selectively formed. These can be directly or after forming an additional growth portion, adhered to the catch-up substrate, and the growth portion can be transplanted to the catch-up substrate by cleaving the amide bond and ester bond. It is also possible to selectively pick up different growth parts by utilizing the fact that the amide bond and ester bond cleavage conditions (temperature, PH, enzyme / catalyst, etc.) are different.

  Bonding between the growth portion and the catch-up substrate can be performed by using a normal adhesive material for the catch-up layer. Alternatively, a group capable of reacting with the end of the growth part may be disposed on the surface of the catch-up layer and bonded. In addition, the transplant technique according to the present invention can expand the SORT method that has been applied to the conventional thin film element to the molecular scale SORT method applied to the present micro / nano device system. This makes it possible to increase the productivity of a micro / nano device system in which various elements are integrated.

[Tenth embodiment]
When self-line optical coupling between two optical elements is performed by SOLNET, it is necessary to form writing light from both elements to form a double-sided irradiation type SOLNET. This method has no problem in the case of a simple structure such as coupling between two fibers, but becomes a serious problem in SOLNET formation inside an optical circuit network or SOLNET formation with an element that cannot emit write light. One of the methods for solving this is reflective SOLNET (Reflective SOLNET) (detailed in Non-Patent Document 1). The conceptual diagram is shown in FIG. The end face of one element to be coupled is set to have a higher reflectance with respect to the writing light than the periphery. In the example of FIG. 15, a waveguide / fiber is considered as an optical element, and a wavelength filter is formed in the vicinity of the core end face. This wavelength filter has high reflectivity for writing light and high transmittance for signal light. When the writing light 24 is introduced from the other optical element into this structure, a SOLNET is formed by the reflected writing light from the end face, and self-aligned optical coupling similar to the double-sided irradiation can be realized. That is, since the reflected writing light plays the role of one-side writing light for both-side irradiation, a self-alignment effect similar to that for both-side irradiation can be realized by one-side irradiation.

  FIG. 16 shows an example of a reflective SOLNET according to the present invention. In FIG. 16A, the reflection part on the end face of the optical element is curved. As a result, the spread of the reflected light is increased, and the overlapping area with the incident writing light can be enlarged, so that it is easy to form the reflective SOLNET even when the positional deviation is large. In FIG. 16B, a plurality of optical elements having reflection end faces are arranged. A plurality of coupled waveguides can be formed at a time with only one writing light 24. FIG. 16C shows an example of forming a SOLNET with an element whose one of the optical elements is an LD, a VCSEL, a PD, an optical switch, an optical modulator, an optical amplifier device, a photonic crystal, etc., and which is difficult to emit write light. Is shown. A SOLNET can be formed by disposing an element / material having a high writing light reflectivity such as a wavelength filter in a place where signal light of these optical elements is to be guided. In particular, when the optical element is a photonic crystal, by disposing a photonic crystal structure modulation unit 51 having a lattice point arrangement and / or a lattice point size different from other regions in a waveguide portion in the photonic crystal, It is possible to increase the reflectance with respect to the writing light and form a reflection portion.

  FIG. 17 shows an example in which a reflective SOLNET is applied to interlayer optical coupling of a three-dimensional optical circuit composed of multilayer waveguides. Here, an example in which a film 52 having a waveguide is laminated is shown. The optical path of the guided light is changed by a waveguide reflector (mirror, filter, etc.), and interlayer optical coupling is performed. A self-aligned vertical waveguide can be formed by forming a wavelength filter at the position of the reflector of one layer.

  FIG. 18 is a conceptual diagram illustrating an example of a micro / nano system combining the first to tenth embodiments. A stacked unit of a photonic crystal and a thin film IC is integrated with another optical element and is three-dimensionally connected by a waveguide. Here, the case where the beam size in the photonic crystal is different from the beam size in the waveguide is shown. The photonic crystal and the waveguide, the optical element 53 and the waveguide, and the optical Z-Connection between the layers are formed by SOLNET. Between the photonic crystal and the waveguide, either end face coupling or surface coupling may be used. By using Reflective SOLNET in combination, a simple SOLNET formation process becomes possible. When the thin film IC is a thin film LSI and the light emitting part and the light receiving part are provided in the photonic crystal, high-density optical interconnection between LSIs and between LSIs is possible. Further, when an optical switch, a variable wavelength filter, and a wavelength conversion element are incorporated in the photonic crystal, large-scale optical switching and re-configurable optical wiring are possible. Micro / nano biosystems are also possible when bioelements are integrated.

  As described above, according to the 1-10th embodiment of the present invention, it is possible to increase the degree of freedom of the micro / nano device density increase and the electrical control of the micro optical device. Alternatively, an optical switch capable of performing a Cross / Bar / Add operation can be realized. Alternatively, a highly integrated optoelectronic micro / nano system can be realized. Alternatively, a simple SOLNET forming method can be realized. Alternatively, various micro / nano device system structures such as mirror surfaces can be realized. Alternatively, a low-loss 45 ° mirror can be realized. Or, realize MND with the function of molecular scale replication “Molecular Nano-Duplication (MND)” to improve the productivity of device systems built on micro / nano scale and to integrate micro / nano device systems can do. Various micro / nano systems can be constructed by combining the inventions described in this specification.

  1 is a conceptual diagram of an electrically controllable photonic crystal laminated with an integrated circuit according to a first embodiment of the present invention.   It is a conceptual diagram of the optical switch with an Add function based on the waveguide prism deflection type micro optical switch according to the second embodiment of the present invention.   It is a conceptual diagram of the optical switch with an Add function based on the waveguide prism deflection type micro optical switch according to the second embodiment of the present invention.   It is a conceptual diagram of the optical switch with an Add function based on the waveguide prism deflection type micro optical switch according to the second embodiment of the present invention.   It is a conceptual diagram of the optical switch with an Add function based on the waveguide prism deflection | deviation type | mold micro optical switch by 3rd Embodiment of this invention.   It is a conceptual diagram of the improvement structure of Phosphor SOLNET by 5th Embodiment of this invention.   It is a conceptual diagram of the improved structure of Phosphor SOLNET by 6th Embodiment of this invention.   It is a conceptual diagram of the improvement structure of Phosphor SOLNET by 7th Embodiment of this invention.   It is a conceptual diagram of the structure formation method using the photosensitive material by 8th Embodiment of this invention.   It is the three-dimensional schematic structure figure of the core pattern of the inclination core surface vicinity by 8th Embodiment of this invention, and a corresponding light shielding film pattern.   It is a conceptual diagram of the MND method by 9th Embodiment of this invention.   It is a conceptual diagram of the MND method by 9th Embodiment of this invention.   10 is a reaction formula related to a separable bond according to a ninth embodiment of the present invention.   10 is a reaction formula related to a separable bond according to a ninth embodiment of the present invention.   It is a conceptual diagram of Reflective SOLNET.   It is a conceptual diagram of the improved structure of Reflective SOLNET by 10th Embodiment of this invention.   It is a conceptual diagram of the improved structure of Reflective SOLNET by 10th Embodiment of this invention.   1 is a conceptual example of a micro / nano system according to a first to tenth embodiment of the present invention.

Explanation of symbols

1 substrate 2 photonic crystal 3 electrode 4 counter electrode 5 interface layer 6 wiring 7 thin film integrated circuit (IC) 8 waveguide in photonic crystal 9 input waveguide 10 clad 11 slab Waveguide, 12 EO slab waveguide, 13a, b, c, d Prism type electrode, 13e-o Split waveguide shape type electrode, 14 Waveguide lens, 15 Add waveguide, 16 Mode extractor 17 Signal light λ1, 18 Signal light λ2, 19 output waveguide, 20 waveguide, 21a light emitting part, 21b EL light emitting part, 22 Photo-refractive (PR) material, 23a stimulation light, 23b electrode, 24 writing beam, 25 translucent substrate, 26 light shielding Layer, 27 release layer, 28 base film, 29a underclad sheet, 29b underclad Cured part, 29c underclad, 30a core sheet, 30b core sheet cured part, 30c core, 31a overclad sheet, 31b overclad sheet cured part, 32a Cover Mask-1, 32b Cover Mask-1, 31c overclad, 33 mirror or filter, 34 cladding, 35 support substrate, 36 film waveguide, 37 light, 40 growth substrate, 41a processing region and / or seed core, 41b processing region and / or seed core I, 41c processing region and / or seed core II, 42 exfoliation part, 43a growth part, 43b growth part I, 43c growth part II, 44 Catch-up substrate, 45 Catch-up layer, 46 waveguide / fiber, 47 wavelength filter, 48 Reflecti e SOLNET, 49 LD / VCSEL / PD / optical switch / optical modulator / optical amplifier device / photonic crystal, 50 a photonic crystal, 51 photonic crystal structure modulating unit, 52 film, 53 an optical element

Claims (24)

  A material having at least one property selected from nonlinear optical properties, light-emitting properties, light-absorbing properties, light-transmitting properties, conductive properties, semiconducting properties, and insulating properties in at least a part of its structure, and its lattice region and / or lattice An optoelectronic micro / nano device having a photonic crystal in which a microelectrode is formed in the vicinity of a region other than the region, and an integrated circuit laminated on the photonic crystal.   A material having at least one property selected from nonlinear optical properties, light-emitting properties, light-absorbing properties, light-transmitting properties, conductive properties, semiconducting properties, and insulating properties in at least a part of its structure, and its core region and / or filter An optoelectronic micro / nano device having a strongly confined optical circuit in which a microelectrode is formed in the vicinity of a region and an integrated circuit stacked on the strongly confined optical circuit.   A slab waveguide having a nonlinear optical effect in at least a part of the structure, a prism-shaped electrode formed in the vicinity of the slab waveguide, an input unit, and an output unit larger than the number of the input units, An optical switch with an Add function, characterized in that some of the output units are joined and a voltage is selectively applied to the prism-shaped electrode.   A slab waveguide having a nonlinear optical effect has at least a part of the structure, and has a waveguide-shaped electrode formed in the vicinity of the slab waveguide, an input unit, and an output unit. An optical switch with an Add function, wherein a voltage is selectively applied.   At least the optoelectronic micro / nano device and / or the add formed by implanting and integrating the optoelectronic micro / nano device and / or the optical switch with an add function according to claim 1 to another support. Optoelectronic micro / nano system characterized by including optical switch with function.   A material whose refractive index is increased by irradiation of writing light is disposed between a plurality of optical elements, and at least one of the plurality of optical elements has a waveguide that emits light by external stimulating light. In a self-organized optical network that forms an optical path connecting the plurality of optical elements by irradiating light from outside, the width and / or thickness of the waveguide is increased in at least a part of the stimulation light irradiation region. A self-organizing optical network characterized by   A material whose refractive index is increased by irradiation of writing light is disposed between a plurality of optical elements, and at least one of the plurality of optical elements has a waveguide that emits light by external stimulating light. In a self-organized optical network that forms an optical path connecting the plurality of optical elements by irradiating light from the outside, a thin-film light emitting cord provided in the vicinity of the waveguide where at least one of the stimulation lights emits light A self-organizing optical network characterized by emanating from a child.   Self that forms a light path that connects the plurality of optical elements by light emitted from at least one optical element of the plurality of optical elements, and a material whose refractive index increases by writing light irradiation is disposed between the plurality of optical elements. A self-organized optical network, wherein at least one of the emitted light is emitted from a waveguide that emits light by current injection.   Optoelectronics comprising a manufacturing process in which light is incident on a photosensitive material layer at a specific angle and / or direction, or a plurality of angles and / or directions to alter the photosensitive material to form a structure. In the micro / nano system, a laminated structure including photosensitive sheets having different physical properties or structures is formed, and at least a part of the light irradiation step is performed after the formation of the laminated structure. Nano system.   10. The optoelectronic micro / nano system according to claim 9, wherein the structure to be formed is a waveguide, and light is incident on the substrate at a specific angle and / or direction, or at a plurality of angles and / or directions. After the exposure of a part of the photosensitive sheet, before development, the writing light is propagated to the waveguide and irradiated to the unexposed portion of the photosensitive sheet to form a self-organized waveguide. Electronic micro / nano system.   10. The optoelectronic micro / nano system according to claim 9, wherein the formed structure is a waveguide, and a part of the waveguide width is another waveguide portion in the vicinity of the inclined surface structure and / or corner turning of the waveguide. Optoelectronic micro / nano system, characterized by its wider size than   A method of manufacturing a micro / nano device system, comprising: supplying a molecule to a substrate to form a growth portion, and implanting at least a part of the growth portion on another support.   13. The method of manufacturing a micro / nano device system according to claim 12, wherein after the growth portion is transplanted from the substrate to another support, molecules are supplied to the substrate to form the growth portion again, and the growth is formed again. A method of manufacturing a micro / nano device system, including a step of implanting at least a part of a part on another support.   13. The method of manufacturing a micro / nano device system according to claim 12, wherein molecules are supplied to a substrate on which a processing region and / or a seed core is selectively formed in a desired arrangement, and the processing region and / or the seed core is present. And other portions are formed with different thicknesses and / or orientations and / or physical properties, and a method of manufacturing a micro / nano device system. 15. The method of manufacturing a micro / nano device system according to claim 13 and 14, wherein a severable bond is formed at a boundary between a growth part and a processing region and / or a seed core, or in the middle of the growth part. / Nanodevice system manufacturing method. 16. The method of manufacturing a micro / nanodevice system according to claim 15, wherein the breakable bond is broken by introducing molecules and / or atoms and / or ions that promote the breakage in a solution or in a gas phase. A method of manufacturing a micro / nano device system characterized by the above.   16. The micro / nano device system manufacturing method according to claim 15, wherein the growth part is divided after the support is placed on the surface of the growth part or the region formed thereon. Device system manufacturing method.   14. The method of manufacturing a micro / nano device system according to claim 12 or 13, wherein at least one of the elements included in the micro / nano device system is a photonic crystal, a grating, an optical wiring path, an optical switch, a variable wavelength filter, It is an element selected from the group consisting of a wavelength conversion element, a light emitting element, a light receiving element, a filter, a mirror, a prism, a lens, a hologram, an optical amplifier, an optical memory, an electrical wiring path, a transistor, and a bio element. Micro / nano device system.   14. The optoelectronic micro / nano system according to claim 12 and 13, wherein the growth portion is formed by a method selected from organic CVD, vapor deposition polymerization, molecular layer deposition (MLD), and solution MLD. Micro / nano system.   A material whose refractive index is increased by writing light irradiation is disposed between a plurality of optical elements, and at least one of the plurality of optical elements has a reflectivity for the writing light at the input and / or output end in the vicinity thereof. In a reflective self-organized optical network, which is higher than the above and forms an optical path connecting optical elements by reflected light and writing light from the input and / or output end, the reflection part of the input and / or output end includes Reflective self-organized optical network characterized by being curved.   A material whose refractive index is increased by writing light irradiation is disposed between a plurality of optical elements, and at least one of the plurality of optical elements has a reflectivity for the writing light at the input and / or output end in the vicinity thereof. In a reflective self-organized optical network that forms an optical path that connects optical elements by the reflected light and the writing light from the input and / or output ends, the reflection of the input and / or output ends with respect to the writing light A reflective self-organizing optical network, wherein a plurality of the optical elements having a higher rate than the surrounding area are installed.   A material whose refractive index is increased by writing light irradiation is disposed between a plurality of optical elements, and at least one of the plurality of optical elements has a reflectivity for the writing light at the input and / or output end in the vicinity thereof. In a reflective self-organized optical network that forms an optical path that connects optical elements by the reflected light and the writing light from the input and / or output ends, the reflection of the input and / or output ends with respect to the writing light At least one of the optical elements having a higher rate than the periphery thereof is a laser diode, a surface emitting laser (VCSEL), a photodetector, an optical switch, an optical modulator, an optical amplifier, a wavelength conversion element, a wavelength filter, or a photonic crystal. Reflective self-organized optical network characterized by being chosen from among them.   A material whose refractive index is increased by writing light irradiation is disposed between a plurality of optical elements, and at least one of the plurality of optical elements has a reflectivity for the writing light at the input and / or output end in the vicinity thereof. In a reflective self-organized optical network that forms an optical path that connects optical elements by reflected light and writing light from the input and / or output ends, a plurality of optical waveguide layers are three-dimensionally stacked. A reflective self-organization characterized in that at least one of the optical waveguide layers has a reflector for changing the optical path of the guided light to the outside of the layer, and a wavelength filter having high reflectivity for writing light is formed in the vicinity of the reflector Kagami optical network.   A material whose refractive index is increased by writing light irradiation is disposed between a plurality of optical elements, and at least one of the plurality of optical elements has a reflectivity for the writing light at the input and / or output end in the vicinity thereof. In a reflective self-organized optical network that forms an optical path that connects optical elements by reflected light and writing light from the input and / or output ends, at least one of the optical elements is a photonic crystal. A reflection type self-organized optical network, characterized in that an increase in reflectance with respect to writing light at its input and / or output is caused by modulation of a photonic crystal structure.

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