JP2005257740A5 - - Google Patents

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Publication number
JP2005257740A5
JP2005257740A5 JP2004065375A JP2004065375A JP2005257740A5 JP 2005257740 A5 JP2005257740 A5 JP 2005257740A5 JP 2004065375 A JP2004065375 A JP 2004065375A JP 2004065375 A JP2004065375 A JP 2004065375A JP 2005257740 A5 JP2005257740 A5 JP 2005257740A5
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Japan
Prior art keywords
exposure
optical system
projection optical
mask
partial
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JP2004065375A
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Japanese (ja)
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JP2005257740A (en
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Priority to JP2004065375A priority Critical patent/JP2005257740A/en
Priority claimed from JP2004065375A external-priority patent/JP2005257740A/en
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Publication of JP2005257740A5 publication Critical patent/JP2005257740A5/ja
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Claims (13)

第1面の縮小像を第2面上に形成する投影光学系において、
前記第1面における最大物高をφoとし、前記投影光学系中のすべてのレンズの有効径のうちの最大となる有効径の値をφmaxとするとき、
6.6<φmax/φo<12
の条件を満足することを特徴とする投影光学系。
In a projection optical system for forming a reduced image of the first surface on the second surface,
When the maximum object height on the first surface is φo, and the maximum effective diameter value of all the effective diameters of the lenses in the projection optical system is φmax,
6.6 <φmax / φo <12
A projection optical system characterized by satisfying the following conditions.
前記投影光学系は、約|1/5|から約|1/4|の大きさの投影倍率を有することを特徴とする請求項1に記載の投影光学系。 The projection optical system according to claim 1, wherein the projection optical system has a projection magnification of about | 1/5 | to about | 1/4 |. 前記投影光学系の光路中の雰囲気の屈折率を1とするとき、前記投影光学系と前記第2面との間の光路が1.1よりも大きい屈折率を有する媒質で満たされた状態で前記第1面の縮小像を前記第2面上に形成することを特徴とする請求項1または2に記載の投影光学系。 When the refractive index of the atmosphere in the optical path of the projection optical system is 1, the optical path between the projection optical system and the second surface is filled with a medium having a refractive index greater than 1.1. The projection optical system according to claim 1, wherein a reduced image of the first surface is formed on the second surface. 前記条件6.6<φmax/φo<12に代えて、
8<φmax/φo<11
の条件を満足することを特徴とする請求項1乃至3のいずれか1項に記載の投影光学系
Instead of the condition 6.6 <φmax / φo <12,
8 <φmax / φo <11
The projection optical system according to claim 1, wherein the following condition is satisfied .
前記第1面に設定されたマスクを照明する照明工程と、請求項1乃至4のいずれか1項に記載の投影光学系を介して前記マスクに形成されたパターンの像を前記第2面に設定された感光性基板上に投影露光する露光工程とを備えていることを特徴とする露光方法。 An illumination process for illuminating the mask set on the first surface, and an image of a pattern formed on the mask via the projection optical system according to any one of claims 1 to 4 on the second surface An exposure method comprising: an exposure step of projecting and exposing on a set photosensitive substrate . 前記露光工程では、2つの部分露光領域を含む1つのショット領域へ投影露光を行い、
前記露光工程は、前記部分露光領域へ投影露光する部分露光工程を少なくとも2つ有し、
前記部分露光工程では、前記投影光学系に対して前記マスクおよび前記感光性基板を相対移動させつつ前記部分露光領域への走査露光を行うことを特徴とする請求項5に記載の露光方法。
In the exposure step, projection exposure is performed on one shot area including two partial exposure areas,
The exposure step includes at least two partial exposure steps of projecting and exposing to the partial exposure region,
6. The exposure method according to claim 5, wherein in the partial exposure step, scanning exposure is performed on the partial exposure region while moving the mask and the photosensitive substrate relative to the projection optical system .
前記露光工程は、前記投影光学系に対して前記マスクおよび前記感光性基板を所定の向きに相対移動させつつ一方の部分露光領域への走査露光を行う第1回目の部分露光工程と、前記投影光学系に対して前記マスクおよび前記感光性基板を前記所定の向きと反対の向きに相対移動させつつ他方の部分露光領域への走査露光を行う第2回目の部分露光工程とを有することを特徴とする請求項6に記載の露光方法。 The exposure step includes a first partial exposure step of performing scanning exposure on one partial exposure region while relatively moving the mask and the photosensitive substrate in a predetermined direction with respect to the projection optical system; and the projection And a second partial exposure step of performing scanning exposure on the other partial exposure region while relatively moving the mask and the photosensitive substrate in the direction opposite to the predetermined direction with respect to the optical system. The exposure method according to claim 6 . 前記露光工程は、前記投影光学系に対して前記マスクおよび前記感光性基板を所定の向きに相対移動させつつ一方の部分露光領域への走査露光を行う第1回目の部分露光工程と、前記投影光学系に対して前記マスクおよび前記感光性基板を前記所定の向きに相対移動させつつ他方の部分露光領域への走査露光を行う第2回目の部分露光工程とを有することを特徴とする請求項6に記載の露光方法。 The exposure step includes a first partial exposure step of performing scanning exposure on one partial exposure region while relatively moving the mask and the photosensitive substrate in a predetermined direction with respect to the projection optical system; and the projection And a second partial exposure step of performing scanning exposure on the other partial exposure region while moving the mask and the photosensitive substrate relative to the optical system in the predetermined direction. 6. The exposure method according to 6 . 前記露光工程では、複数のショット領域へ投影露光を行い、
前記露光工程は、前記複数のショット領域中の所定の前記部分露光領域へ投影露光する第1回目の部分露光工程と、前記複数のショット領域中の別の前記部分露光領域へ投影露光する第2回目の部分露光工程とを有することを特徴とする請求項6または8に記載の露光方法。
In the exposure step, projection exposure is performed on a plurality of shot areas,
The exposure step includes a first partial exposure step in which projection exposure is performed to the predetermined partial exposure region in the plurality of shot regions, and a second projection exposure to another partial exposure region in the plurality of shot regions. The exposure method according to claim 6, further comprising a second partial exposure step .
前記第1回目の部分露光工程と前記第2回目の部分露光工程との間に前記マスクを交換しないことを特徴とする請求項7乃至9のいずれか1項に記載の露光方法。 The exposure method according to claim 7, wherein the mask is not exchanged between the first partial exposure step and the second partial exposure step . 前記露光工程に先立って、前記投影光学系の光路中の雰囲気の屈折率を1とするとき、前記投影光学系と前記感光性基板との間の光路を1.1よりも大きい屈折率を有する媒質で満たす充填工程をさらに備えていることを特徴とする請求項5乃至10のいずれか1項に記載の露光方法 Prior to the exposure step, when the refractive index of the atmosphere in the optical path of the projection optical system is 1, the optical path between the projection optical system and the photosensitive substrate has a refractive index greater than 1.1. The exposure method according to claim 5, further comprising a filling step of filling with a medium . 前記第1面に設定されたマスクを照明するための照明系と、前記マスクに形成されたパターンの像を前記第2面に設定された感光性基板上に形成するための請求項1乃至4のいずれか1項に記載の投影光学系とを備えていることを特徴とする露光装置。 5. An illumination system for illuminating a mask set on the first surface, and an image of a pattern formed on the mask on a photosensitive substrate set on the second surface. An exposure apparatus comprising the projection optical system according to any one of the above . 前記投影光学系に対して前記マスクおよび前記感光性基板を所定の方向に移動させつつ前記感光性基板への走査露光を行い、Scanning exposure to the photosensitive substrate while moving the mask and the photosensitive substrate in a predetermined direction with respect to the projection optical system,
前記マスクを支持して前記所定の方向とほぼ直交する方向にステップ移動させるためのマスクステージをさらに備えていることを特徴とする請求項12に記載の露光装置。The exposure apparatus according to claim 12, further comprising a mask stage for supporting the mask and moving it stepwise in a direction substantially perpendicular to the predetermined direction.
JP2004065375A 2004-03-09 2004-03-09 Projection optical system, exposing device, and exposure method Withdrawn JP2005257740A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004065375A JP2005257740A (en) 2004-03-09 2004-03-09 Projection optical system, exposing device, and exposure method

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Application Number Priority Date Filing Date Title
JP2004065375A JP2005257740A (en) 2004-03-09 2004-03-09 Projection optical system, exposing device, and exposure method

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JP2005257740A JP2005257740A (en) 2005-09-22
JP2005257740A5 true JP2005257740A5 (en) 2008-02-28

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Publication number Priority date Publication date Assignee Title
KR20150036786A (en) 2003-04-09 2015-04-07 가부시키가이샤 니콘 Exposure method and apparatus, and device manufacturing method
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
TWI569308B (en) 2003-10-28 2017-02-01 尼康股份有限公司 Optical illumination device, exposure device, exposure method and device manufacturing method
TWI512335B (en) 2003-11-20 2015-12-11 尼康股份有限公司 Light beam converter, optical illuminating apparatus, exposure device, and exposure method
US20080151365A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
TWI379344B (en) 2004-02-06 2012-12-11 Nikon Corp Polarization changing device, optical illumination apparatus, light-exposure apparatus and light-exposure method
KR20170129271A (en) 2004-05-17 2017-11-24 칼 짜이스 에스엠티 게엠베하 Catadioptric projection objective with intermediate images
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101455551B1 (en) 2005-05-12 2014-10-27 가부시키가이샤 니콘 Projection optical system, exposure apparatus and exposure method
JP5267029B2 (en) 2007-10-12 2013-08-21 株式会社ニコン Illumination optical apparatus, exposure apparatus, and device manufacturing method
US8379187B2 (en) 2007-10-24 2013-02-19 Nikon Corporation Optical unit, illumination optical apparatus, exposure apparatus, and device manufacturing method
US9116346B2 (en) 2007-11-06 2015-08-25 Nikon Corporation Illumination apparatus, illumination method, exposure apparatus, and device manufacturing method

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