JP2005243804A - Heating piping structure of semiconductor manufacturing apparatus - Google Patents

Heating piping structure of semiconductor manufacturing apparatus Download PDF

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JP2005243804A
JP2005243804A JP2004049880A JP2004049880A JP2005243804A JP 2005243804 A JP2005243804 A JP 2005243804A JP 2004049880 A JP2004049880 A JP 2004049880A JP 2004049880 A JP2004049880 A JP 2004049880A JP 2005243804 A JP2005243804 A JP 2005243804A
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piping
temperature
heating
semiconductor manufacturing
manufacturing apparatus
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JP4283135B2 (en
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Atsunori Yamauchi
敦典 山内
Toshiharu Matsueda
敏晴 松枝
Sukenori Shibahara
資典 柴原
Hiroshi Harikae
宏 張替
Tomonori Tsuchida
友則 土田
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Furukawa Co Ltd
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Furukawa Co Ltd
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    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16LPIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L53/00Heating of pipes or pipe systems; Cooling of pipes or pipe systems
    • F16L53/30Heating of pipes or pipe systems
    • F16L53/35Ohmic-resistance heating
    • F16L53/38Ohmic-resistance heating using elongate electric heating elements, e.g. wires or ribbons
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16LPIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
    • F16L53/00Heating of pipes or pipe systems; Cooling of pipes or pipe systems
    • F16L53/70Cooling of pipes or pipe systems

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  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Pipe Accessories (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To increase temperature required for bake-out over the entire piping route of a semiconductor manufacturing apparatus, and to improve working efficiency by reducing maintenance work for cleaning. <P>SOLUTION: A heating means 5 is provided at the outer periphery of the middle section 4 of a piping module 1 having a connection flange 2 at both the ends, a cooling means 7 is provided at the outer periphery of the end 6 of the piping module 1, and a liner 9 that straddles the end 6 and forms a gap 8 at an area to the inner periphery is provided between respective middle sections 4 of the adjacent piping modules 1. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、半導体製造装置の排気経路等に用いられる加熱機能を有する配管構造に関するものである。   The present invention relates to a piping structure having a heating function used in an exhaust path or the like of a semiconductor manufacturing apparatus.

化合物半導体の製造に用いるMOCVD装置などの半導体製造装置の排気経路では、未反応の砒素やリンなどがガスの温度の降下に伴って凝結し、配管内壁に付着する。配管内壁に付着物が生じるとガスの流れに変化が生じ、上流側の半導体製造装置に悪影響を及ぼすので、配管を加熱することでガスの温度降下量を抑えて配管内壁への付着物の量を低減し、さらには、付着物の量が一定量まで達したら配管を所定温度以上に加熱し付着物を蒸気にしてキャリアガスで除去する、いわゆるベークアウトを行うことが必要である。   In the exhaust path of a semiconductor manufacturing apparatus such as an MOCVD apparatus used for manufacturing a compound semiconductor, unreacted arsenic, phosphorus, and the like condense as the gas temperature decreases and adhere to the inner wall of the pipe. If deposits occur on the inner wall of the pipe, the flow of gas changes, which adversely affects the upstream semiconductor manufacturing equipment. By heating the pipe, the amount of deposit on the inner wall of the pipe is suppressed by suppressing the temperature drop of the gas. Furthermore, when the amount of deposits reaches a certain level, it is necessary to perform so-called bake-out in which the piping is heated to a predetermined temperature or higher to remove the deposits with a carrier gas.

ベークアウトの温度は付着物の組成によるが、例えば付着物が砒素である場合は400℃以上にしなければならない。
従来の半導体製造装置の排気経路の配管に備えられていた加熱手段としては、ラインヒーターが挙げられるが、一般的なラインヒーターは加熱温度が100℃程度で砒素が付着した場合に必要となる400℃には遠く及ばなかった。
The bakeout temperature depends on the composition of the deposit, but for example, when the deposit is arsenic, it must be 400 ° C. or higher.
As a heating means provided in the piping of the exhaust path of the conventional semiconductor manufacturing apparatus, a line heater can be mentioned. A general line heater is necessary when arsenic is attached at a heating temperature of about 100 ° C. 400 It did not reach far to ℃.

近年、配管の周囲にコードヒーターを沿わせ、その外周に均熱層、保温層、及び保護カバーを設けることで400℃まで昇温可能とした高温対応のラインヒーターが提案されている(特許文献1参照)。
しかし、半導体製造装置の排気経路の配管は、単位配管を多数連結して構成されており、連結箇所であるフランジ部にはパッキングが設けられている。パッキングの耐熱温度は200℃程度なので、連結箇所を含む排気経路の配管全体をこの高温対応のラインヒーターで被覆しても、昇温できるのはパッキングの耐熱温度までであり、400℃でのベークアウトを行うことはできない。
In recent years, a high-temperature line heater has been proposed that can increase the temperature up to 400 ° C. by placing a cord heater around the pipe and providing a soaking layer, a heat insulating layer, and a protective cover on the outer periphery (Patent Document). 1).
However, the piping of the exhaust path of the semiconductor manufacturing apparatus is configured by connecting a large number of unit pipes, and a packing is provided at a flange portion that is a connection location. Since the heat-resistant temperature of the packing is about 200 ° C, even if the entire piping of the exhaust path including the connecting part is covered with this high-temperature line heater, the temperature can be increased up to the heat-resistant temperature of the packing, and baking at 400 ° C is possible. Can't do out.

仮に、排気経路の配管の連結箇所を避けて、それ以外の部分のみを高温対応のラインヒーターで被覆し400℃まで昇温しても、配管全体では均一な温度分布にはならないので、十分なベークアウトはできない。この場合、400℃まで昇温しない通常の加熱状態においても配管内の温度分布は不均一となり、温度の低い連結箇所には大量の付着物が生じてしまうので、配管の加熱方法としては好ましくない。   Even if the exhaust pipe is not connected to the exhaust pipe and only the other parts are covered with a high-temperature line heater and the temperature is raised to 400 ° C, the temperature distribution is not uniform over the entire pipe. You cannot bake out. In this case, even in a normal heating state in which the temperature is not raised to 400 ° C., the temperature distribution in the pipe becomes non-uniform, and a large amount of deposits are generated at the connecting portion having a low temperature. .

以上のように、従来の配管の加熱手段では、400℃のベークアウトはできないので、頻繁に配管を分解して付着物を除去する必要があり、作業効率を悪化させる原因となっていた。
また、半導体製造装置やその付帯設備である排気経路の配管は、定期的に清掃を行う必要があるが、ラインヒーターで被覆した配管の分解・組み付けは面倒であり、特に、配管経路全体をラインヒーターで被覆した場合の分解・組み付けは非常に複雑で面倒な作業であった。
特開2002−228081号公報
As described above, since the conventional piping heating means cannot be baked out at 400 ° C., it is necessary to frequently disassemble the piping to remove the deposits, which causes the working efficiency to deteriorate.
In addition, it is necessary to periodically clean the piping of the exhaust path, which is a semiconductor manufacturing device and its ancillary equipment, but disassembling and assembling the pipe covered with the line heater is troublesome. Disassembling and assembling when covered with a heater was a very complicated and troublesome task.
JP 2002-228081 A

本発明は、半導体製造装置の排気経路の配管における上記問題を解決するものであって、配管経路の全体に亙ってベークアウトに必要な温度まで昇温可能で、清掃のためのメンテナンス作業を低減し作業効率を向上させることができる半導体製造装置の加熱配管構造を提供することを目的とする。   The present invention solves the above problem in the piping of the exhaust path of a semiconductor manufacturing apparatus, and can raise the temperature up to the temperature required for baking out over the entire piping path, and can perform maintenance work for cleaning. It aims at providing the heating piping structure of the semiconductor manufacturing apparatus which can reduce and improve work efficiency.

本発明の半導体製造装置の加熱配管構造では、両端に連結用のフランジを備えた配管モジュールの中間部の外周に加熱手段を設け、配管モジュールの端部の外周に冷却手段を設けると共に、互いに隣接する配管モジュールの各中間部の間に、端部を跨ぎその内周との間に空隙を形成するライナーを設けることにより上記課題を解決している。
この加熱配管構造では、加熱手段とフランジとの間の配管モジュールの端部の外周に冷却手段が設けられているので、加熱手段で配管をベークアウト可能な温度まで加熱しても、フランジの温度がパッキングの耐熱温度を超えて上昇することはない。
In the heating piping structure of the semiconductor manufacturing apparatus of the present invention, the heating means is provided on the outer periphery of the intermediate portion of the piping module having the connecting flanges at both ends, the cooling means is provided on the outer periphery of the end portion of the piping module, and adjacent to each other. The above-mentioned problem is solved by providing a liner that spans the end portion and forms a gap between the intermediate portions of each piping module to be formed.
In this heating piping structure, since the cooling means is provided on the outer periphery of the end of the piping module between the heating means and the flange, even if the heating means is heated to a temperature at which the piping can be baked out, the temperature of the flange Will not rise above the heat resistance temperature of the packing.

また、互いに隣接する配管モジュールの各中間部の間に、端部を跨ぎその内周との間に空隙を形成するライナーが設けられているので、加熱手段で加えられる熱が中間部からライナーへ伝導する。冷却手段で冷却される端部とライナーとの間は空隙で熱的に遮断されているので、ライナーはベークアウト温度まで加熱することが可能となる。
加熱手段を電気式ヒーター、冷却手段を水冷ジャケットとし、互いに隣接する配管モジュールの電気式ヒーターの電極同士、及び水冷ジャケットの冷却水配管同士をそれぞれ接続すると、定期的に行われる清掃のための分解・組み付け作業を単純化することができ、また、配管経路の変更にも柔軟に対応することができる。
In addition, since a liner is provided between each intermediate portion of the adjacent piping modules so as to straddle the end portion and to form an air gap with the inner periphery thereof, the heat applied by the heating means is transferred from the intermediate portion to the liner. Conduct. Since the gap between the end cooled by the cooling means and the liner is thermally blocked by a gap, the liner can be heated to the bakeout temperature.
When the heating means is an electric heater, the cooling means is a water cooling jacket, and the electrodes of the electric heaters of the adjacent piping modules and the cooling water pipes of the water cooling jacket are connected to each other, disassembly for cleaning that is performed periodically.・ Assembly can be simplified, and it is possible to respond flexibly to changes in the piping route.

本発明の半導体製造装置の加熱配管構造は、配管経路の全体に亙ってベークアウトに必要な温度まで昇温可能で、清掃のためのメンテナンス作業を低減し作業効率を向上させることができる。   The heating piping structure of the semiconductor manufacturing apparatus of the present invention can raise the temperature to the temperature required for baking out over the entire piping path, and can reduce maintenance work for cleaning and improve work efficiency.

図1は本発明の実施の形態を示す半導体製造装置の加熱配管構造の断面図である。
この加熱配管構造において、配管モジュール1は、両端に連結用のフランジ2を備えており、隣接する配管モジュール1のフランジ2間にはパッキング3が挿着されている。
配管モジュール1の中間部4の外周には加熱手段5、端部6の外周には冷却手段7が設けられている。また、互いに隣接する配管モジュール1の各中間部4の間に、端部6を跨ぎその内周との間に空隙8を形成するライナー9が設けられている。
FIG. 1 is a sectional view of a heating piping structure of a semiconductor manufacturing apparatus showing an embodiment of the present invention.
In this heating piping structure, the piping module 1 includes connecting flanges 2 at both ends, and a packing 3 is inserted between the flanges 2 of the adjacent piping modules 1.
A heating means 5 is provided on the outer periphery of the intermediate portion 4 of the piping module 1, and a cooling means 7 is provided on the outer periphery of the end portion 6. In addition, a liner 9 is provided between the intermediate portions 4 of the piping modules 1 adjacent to each other so as to straddle the end portion 6 and to form a gap 8 between the inner periphery thereof.

加熱手段5は、配管モジュール1の中間部4の外周上に螺旋状に設けた電気ヒーター10、電気ヒーター10の両端に接続されたヒーター電極11、及びこれらを覆うカバー12からなる。この電気ヒーター10は、配管モジュール1内を400℃以上の高温まで昇温する加熱能力を有する。
冷却手段7は、加熱手段5とフランジ2との間の端部6に配設されて外周を覆う水冷ジャケット13、及び冷却水ポンプ(図示略)と冷却水タンク(図示略)に接続され、水冷ジャケット13に冷却水を供給する冷却水配管14からなる。
The heating means 5 includes an electric heater 10 spirally provided on the outer periphery of the intermediate portion 4 of the piping module 1, heater electrodes 11 connected to both ends of the electric heater 10, and a cover 12 covering these. The electric heater 10 has a heating capability of raising the temperature inside the piping module 1 to a high temperature of 400 ° C. or higher.
The cooling means 7 is connected to a water cooling jacket 13 disposed at the end 6 between the heating means 5 and the flange 2 and covering the outer periphery, and a cooling water pump (not shown) and a cooling water tank (not shown). It consists of a cooling water pipe 14 for supplying cooling water to the water cooling jacket 13.

この配管モジュール1を複数連結することで半導体製造装置の排気経路の配管が構成されるが、このとき、互いに隣接する配管モジュール1のヒーター電極11同士、及び冷却水配管14同士がそれぞれ接続される。なお、加熱手段5及び冷却手段7には、それぞれ温度を監視するための温度センサー(図示略)が設けられている。   By connecting a plurality of the piping modules 1, the piping of the exhaust path of the semiconductor manufacturing apparatus is configured. At this time, the heater electrodes 11 and the cooling water pipings 14 of the piping modules 1 adjacent to each other are connected to each other. . The heating means 5 and the cooling means 7 are each provided with a temperature sensor (not shown) for monitoring the temperature.

次に、この配管モジュール1で半導体ガスを加熱する場合について説明する。
通常の運転時には、温度センサーの検出値に基づき電気ヒーター10に通電する電圧を調整し、排ガス中の未反応物が凝結して配管内壁に付着することが少ない温度(200℃から300℃程度)になるよう加熱する。
冷却手段7には冷却水ポンプ及び冷却水タンクとの間で冷却水が常に循環しており、温度センサーの検出値に基づき水量を調整する。
Next, the case where semiconductor gas is heated with this piping module 1 is demonstrated.
During normal operation, the voltage applied to the electric heater 10 is adjusted based on the detection value of the temperature sensor, and the temperature at which unreacted substances in the exhaust gas are less likely to condense and adhere to the inner wall of the pipe (about 200 ° C to 300 ° C) Heat to.
The cooling means 7 constantly circulates cooling water between the cooling water pump and the cooling water tank, and adjusts the amount of water based on the detection value of the temperature sensor.

加熱手段5で配管を200℃から300℃程度まで加熱しても、両端のフランジ2と加熱手段5との間には冷却手段7が設けられているので、フランジ2の温度がパッキング3の耐熱温度まで上昇することはない。互いに隣接する配管モジュール1の各中間部4の間に、端部6を跨ぎその内周との間に空隙8を形成するライナー9が設けられているので、加熱手段5で加えられる熱が中間部4からライナー9へ伝導する。冷却手段7で冷却される端部6とライナー9との間は空隙8で熱的に遮断されているので、内側で排ガスが直接接触するライナー9はパッキング3の耐熱温度を超える200℃から300℃程度まで加熱することが可能となる。   Even if the pipe is heated from about 200 ° C. to about 300 ° C. by the heating means 5, the cooling means 7 is provided between the flange 2 and the heating means 5 at both ends, so It does not rise to temperature. Between each intermediate part 4 of the piping modules 1 adjacent to each other, there is provided a liner 9 that spans the end part 6 and forms a gap 8 between the inner periphery thereof, so that the heat applied by the heating means 5 is intermediate. Conducted from part 4 to liner 9. Since the gap between the end 6 cooled by the cooling means 7 and the liner 9 is thermally blocked by the air gap 8, the liner 9 that directly contacts the exhaust gas inside has a temperature of 200 ° C. to 300 ° C. exceeding the heat resistance temperature of the packing 3. It becomes possible to heat up to about ° C.

上記の加熱条件で半導体製造装置を運転しても、配管内壁への付着物を完全に無くすことは不可能であり、装置の稼働に伴い付着物の量が次第に増加するので、ある程度の量に達したらベークアウトを行う必要がある。
ベークアウト時は、通常運転時と同様に温度センサーの検出値に基づき電気ヒーター10に通電する電圧を調整し、400℃以上になるように加熱する。冷却手段7は、温度センサーの検出値に基づき、加熱温度の上昇に伴って冷却水の水量を増加させる。配管内にはN2 等のキャリアガスを流す。
Even if the semiconductor manufacturing device is operated under the above heating conditions, it is impossible to completely eliminate the deposits on the inner wall of the pipe, and the amount of deposits gradually increases with the operation of the device. When it reaches, it is necessary to bake out.
At the time of baking out, the voltage applied to the electric heater 10 is adjusted based on the detected value of the temperature sensor as in the normal operation, and heating is performed at 400 ° C. or higher. The cooling means 7 increases the amount of cooling water as the heating temperature rises based on the detection value of the temperature sensor. A carrier gas such as N 2 is allowed to flow through the pipe.

加熱手段5で配管を400℃以上まで加熱しても、両端のフランジ2と加熱手段5との間には冷却手段7が設けられているので、フランジ2の温度がパッキング3の耐熱温度まで上昇することはない。互いに隣接する配管モジュール1の各中間部4の間に、端部6を跨ぎその内周との間に空隙8を形成するライナー9が設けられているので、加熱手段5で加えられる熱が中間部4からライナー9へ伝導する。冷却手段7で冷却される端部6とライナー9との間は空隙8で熱的に遮断されているので、ライナー9はパッキング3の耐熱温度を超えて400℃以上まで加熱することが可能となる。   Even if the piping is heated to 400 ° C. or higher by the heating means 5, the cooling means 7 is provided between the flange 2 and the heating means 5 at both ends, so that the temperature of the flange 2 rises to the heat resistance temperature of the packing 3. Never do. Between each intermediate part 4 of the piping modules 1 adjacent to each other, there is provided a liner 9 that spans the end part 6 and forms a gap 8 between the inner periphery thereof, so that the heat applied by the heating means 5 is intermediate. Conducted from part 4 to liner 9. Since the gap between the end 6 cooled by the cooling means 7 and the liner 9 is thermally blocked by the gap 8, the liner 9 can be heated to 400 ° C. or more exceeding the heat resistance temperature of the packing 3. Become.

配管内壁に付着した砒素やリン等の付着物は400℃以上に加熱されることで蒸気となり、キャリアガスによって除去される。ベークアウトを行うことができるので、配管を分解して清掃する頻度は従来と比べると著しく低下し、作業能率は大幅に向上する。
なお、上記説明のように、通常の運転時とベークアウト時を異なる加熱条件で制御して運転することも可能であるが、常にベークアウト時の加熱条件で制御して運転してもかまわない。
Deposits such as arsenic and phosphorus adhering to the inner wall of the pipe are heated to 400 ° C. or higher to become vapor and are removed by the carrier gas. Since the bakeout can be performed, the frequency of disassembling and cleaning the pipe is remarkably reduced as compared with the conventional case, and the work efficiency is greatly improved.
As described above, it is possible to operate while controlling under normal heating conditions and different baking conditions under different heating conditions, but it is possible to always operate under controlled heating conditions during baking out. .

互いに隣接する配管モジュール1の間では、ヒーター電極11同士、及び冷却水配管14同士がそれぞれ接続されており、それらが複雑に交錯することはない。また、ライナー9は、ガス流れに対して上流側が配管モジュール1の内周に締り嵌めの状態で嵌合され、下流側が配管モジュール1の内周に隙間嵌めあるいは中間嵌めの状態で嵌合されており、組み付け性を損なうことなく空隙8内への付着物の侵入を防止できる。従って、配管モジュール1同士の分解・組み付けは容易であり、清掃作業を短時間で行うことができ、また、配管経路の変更にも柔軟に対応することができる。
更に、火傷防止及び加熱効率向上のため、配管モジュール1の管壁を真空断熱構造としても良い。
Between the piping modules 1 adjacent to each other, the heater electrodes 11 and the cooling water pipes 14 are connected to each other, and they do not cross each other in a complicated manner. Further, the liner 9 is fitted to the inner periphery of the piping module 1 with an upstream side with respect to the gas flow, and the downstream side is fitted to the inner periphery of the piping module 1 with a gap fit or an intermediate fit. Therefore, it is possible to prevent the adhering material from entering the gap 8 without impairing the assembling property. Therefore, the pipe modules 1 can be easily disassembled and assembled, the cleaning operation can be performed in a short time, and the pipe route can be flexibly changed.
Furthermore, in order to prevent burns and improve heating efficiency, the pipe wall of the pipe module 1 may be a vacuum heat insulating structure.

本発明の実施の形態を示す半導体製造装置の加熱配管構造の断面図である。It is sectional drawing of the heating piping structure of the semiconductor manufacturing apparatus which shows embodiment of this invention.

符号の説明Explanation of symbols

1 配管モジュール
2 フランジ
3 パッキング
4 中間部
5 加熱手段
6 端部
7 冷却手段
8 空隙
9 ライナー
10 電気ヒーター
11 ヒーター電極
12 カバー
13 水冷ジャケット
14 冷却水配管
DESCRIPTION OF SYMBOLS 1 Piping module 2 Flange 3 Packing 4 Middle part 5 Heating means 6 End part 7 Cooling means 8 Space | gap 9 Liner 10 Electric heater 11 Heater electrode 12 Cover 13 Water cooling jacket 14 Cooling water piping

Claims (2)

両端に連結用のフランジを備えた配管モジュールの中間部の外周に加熱手段を設け、配管モジュールの端部の外周に冷却手段を設けると共に、互いに隣接する配管モジュールの各中間部の間に、端部を跨ぎその内周との間に空隙を形成するライナーを設けたことを特徴とする半導体製造装置の加熱配管構造。   Heating means is provided on the outer periphery of the intermediate portion of the piping module having connecting flanges at both ends, and cooling means is provided on the outer periphery of the end portion of the piping module. A heating piping structure for a semiconductor manufacturing apparatus, characterized in that a liner is provided to form a gap between the inner circumference and the inner circumference. 加熱手段が電気式ヒーター、冷却手段が水冷ジャケットであって、互いに隣接する配管モジュールの電気式ヒーターの電極同士、及び水冷ジャケットの冷却水配管同士をそれぞれ接続することを特徴とする請求項1記載の半導体製造装置の加熱配管構造。   2. The heating means is an electric heater, and the cooling means is a water cooling jacket, and the electrodes of the electric heaters of the piping modules adjacent to each other and the cooling water pipes of the water cooling jacket are connected to each other. Heating piping structure of semiconductor manufacturing equipment.
JP2004049880A 2004-02-25 2004-02-25 Heating piping structure of semiconductor manufacturing equipment Expired - Fee Related JP4283135B2 (en)

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JP2005243804A true JP2005243804A (en) 2005-09-08
JP4283135B2 JP4283135B2 (en) 2009-06-24

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243949A (en) * 2004-02-26 2005-09-08 Hitachi Kokusai Electric Inc Substrate treating equipment
JP2009176612A (en) * 2008-01-25 2009-08-06 Shin Meiwa Ind Co Ltd Plasma gun

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243949A (en) * 2004-02-26 2005-09-08 Hitachi Kokusai Electric Inc Substrate treating equipment
JP4617089B2 (en) * 2004-02-26 2011-01-19 株式会社日立国際電気 Substrate processing apparatus, exhaust pipe and substrate processing method
JP2009176612A (en) * 2008-01-25 2009-08-06 Shin Meiwa Ind Co Ltd Plasma gun

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