JP2005243529A - Image display device and manufacturing method of image display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an image display device superior in pressure resistance characteristics, and a manufacturing method of this image display device. <P>SOLUTION: This is the image display device which comprises a front substrate 11 having a phosphor screen 15 including a phosphor layer and a light shielding layer, a metal back layer 20 provided by being piled up on the phosphor screen 15, and a getter layer 22 provided by being piled up on the metal back layer 20, and a back substrate 12 which is arranged opposed to the front substrate 11 and in which an electron emitting element 18 for emitting electrons toward the phosphor screen 15 is arranged. The getter layer 22 is formed by a material in which metal materials of two kinds or more are mixed. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an image display device and a method for manufacturing the image display device, and more particularly to an image display device having a structure capable of improving withstand voltage characteristics and a manufacturing method for manufacturing the image display device.

  In recent years, as a next-generation image display device, a flat-type image display device in which a large number of electron-emitting devices are arranged to face an image display surface has been developed. There are various types of electron-emitting devices, and all of them basically use electron emission by an electric field, and image display devices using these electron-emitting devices are generally field emission displays (hereinafter referred to as field emission displays). , Referred to as FED). Among such FEDs, an image display device using a surface conduction electron-emitting device is also called a surface conduction electron-emitting display (hereinafter referred to as SED), but the term FED is used as a general term including SED. Use.

The FED generally has a front substrate and a rear substrate that are arranged to face each other with a predetermined gap. These substrates are joined to each other at their peripheral parts via a rectangular frame-shaped side wall to constitute a vacuum envelope. The inside of the vacuum envelope is maintained at a high vacuum with a degree of vacuum of about 10 ⁻⁴ Pa or less. Further, in order to support an atmospheric pressure load applied to the back substrate and the front substrate, a plurality of support members are disposed between these substrates.

  A phosphor screen including phosphor layers that emit red, blue, and green light is formed on the inner surface of the front substrate. In order to obtain practical display characteristics, an aluminum thin film called a metal back layer is formed on the phosphor screen. Furthermore, in order to adsorb the gas remaining inside the vacuum envelope and the gas released from each substrate (for example, hydrogen, methane, oxygen, carbon dioxide, water vapor, etc.), it has a gas adsorption characteristic called getter layer. A metal thin film such as Ba (barium), V (vanadium), Ti (titanium), and Ta (tantalum) is deposited on the metal back layer.

  A large number of electron-emitting devices that emit electrons for exciting the phosphor layer to emit light are provided on the inner surface of the rear substrate. A large number of scanning lines and signal lines are formed in a matrix and connected to each electron-emitting device.

  In such an FED, an anode voltage is applied to the image display surface including the phosphor screen and the metal back layer, and an electron beam emitted from the electron-emitting device is accelerated by the anode voltage and collides with the phosphor layer. The phosphor layer emits light. Thereby, an image is displayed on the image display surface. In this case, the anode voltage is desired to be at least several kV, preferably 10 kV or more.

  In such an FED, a gap between the front substrate and the rear substrate can be set to about 1 to 3 mm, which is significantly larger than that of a cathode ray tube (CRT) used as a display of a current television or a computer. Weight reduction and thickness reduction can be achieved.

  However, the gap between the front substrate and the rear substrate cannot be made so large from the viewpoint of resolution and electron emission efficiency characteristics, and needs to be set to about 1 to 3 mm. Therefore, in the FED, it is inevitable that a strong electric field is formed in a small gap between the front substrate and the rear substrate, and discharge (dielectric breakdown) between the two substrates becomes a problem.

  When discharge occurs, a current of 100 A or more instantaneously flows, which causes destruction or deterioration of the electron-emitting device and the image display surface. In addition, the drive circuit may be destroyed by the discharge. These are collectively referred to as discharge damage. Such damage is not allowed as a product. Therefore, in order to put the FED into practical use, damage due to discharge must be suppressed. However, it is very difficult to completely suppress discharge.

  On the other hand, there is a measure not to prevent discharge but to reduce the scale of discharge so that the influence on the electron-emitting device can be ignored (reduced) even if discharge occurs. As a technique related to such a concept, for example, in Patent Document 1, a notch is formed in a metal back layer provided on an image display surface to form a zigzag pattern or the like, and an effective inductance / A technique for increasing resistance is disclosed. Patent Document 2 discloses a technique for dividing the metal back layer. Furthermore, Patent Document 3 discloses a technique in which a coating of a conductive material is provided on a divided portion in order to suppress creeping discharge at the divided portion.

However, even when these techniques are used, it is difficult to completely suppress damage due to discharge.
In general, the voltage at which discharge occurs varies. In addition, discharge may occur after a long period of time. Suppressing the discharge means that no discharge occurs when the anode voltage is applied, or that the probability of discharge is reduced to an acceptable level for practical use. The potential difference between the anode and the cathode that can be applied while suppressing the discharge is hereinafter referred to as a withstand voltage.

  There are various causes of electric discharge, but in particular, in FED, a thin film and getter layer called a metal back layer are formed on the phosphor screen to form a weak layer. Can be a trigger.

  In particular, a metal material that functions as a getter material is characterized by gas species that can be adsorbed. For example, barium can adsorb and remove many gases, but has a low adsorption capacity for hydrogen. Therefore, it is desirable to deposit a plurality of types of getter materials. However, when thin films made of a plurality of getter materials are stacked in multiple layers, a phenomenon in which the withstand voltage is further lowered than in the case of a single layer structure is observed.

The reason why the withstand voltage decreases when a getter layer is formed on the surface of the front substrate is that the thin film itself or thin film deposits are detached from the surface, causing charge transport and electron emission between the front substrate and the back substrate. This is probably because of this. In particular, when discharge (flashover) occurs between the front substrate and the back substrate due to some factor, the thin film at the discharge site is detached, forming fine metal particles of about 0.1 to 1 μm in size, It becomes difficult to maintain the breakdown voltage thereafter. When the getter layer has a multi-layer structure, the boundary adhesion between each thin film is weak, and the thin film is easy to peel off due to the difference in film strength and tenacity such as the thermal expansion coefficient and the bending strength of the two layers. Furthermore, the pressure resistance is lowered.
JP 2000-31642 A Japanese Patent Laid-Open No. 10-326583 JP 2000-251797 A

  As described above, in the FED, a part of the getter layer provided for adsorbing the gas inside the vacuum envelope is peeled off and can be a trigger for discharge, which causes a problem in that the breakdown voltage characteristics are deteriorated.

  The present invention has been made in view of the above-described problems, and an object thereof is to provide an image display device having excellent withstand voltage characteristics and a manufacturing method for manufacturing the image display device.

An image display device according to a first aspect of the present invention provides:
A front substrate having a phosphor screen including a phosphor layer and a light shielding layer, a metal back layer provided on the phosphor screen, and a getter layer provided on the metal back layer;
A rear substrate disposed opposite to the front substrate and disposed with an electron-emitting device that emits electrons toward the phosphor screen;
The getter layer is formed of a material in which two or more kinds of metal materials are mixed.

An image display apparatus manufacturing method according to the second aspect of the present invention is as follows.
A method of manufacturing an image display device comprising: a front substrate having an image display surface; and a rear substrate having an electron-emitting device that emits electrons toward the image display surface,
Preparing the front substrate having a phosphor screen including a phosphor layer and a light shielding layer, and a metal back layer provided on the phosphor screen;
A getter layer is formed on the metal back layer by a material in which two or more kinds of metal materials are mixed.

  According to the image display device and the method of manufacturing the image display device configured as described above, the getter layer is formed by using a material in which two or more kinds of metal materials are mixed, so that the film strength and tenacity such as the yield strength are increased. Thus, the withstand voltage characteristics can be improved and maintained. Therefore, even when the getter layer is formed on the surface of the front substrate, it is possible to provide a long-life image display device that can maintain a required withstand voltage.

  According to the present invention, it is possible to provide an image display device having excellent withstand voltage characteristics and a manufacturing method for manufacturing the image display device.

  Hereinafter, an image display device and a method for manufacturing the image display device according to an embodiment of the present invention will be described with reference to the drawings. Here, as an image display device manufactured by this manufacturing method, an FED having a surface conduction electron-emitting device will be described as an example.

As shown in FIGS. 1 and 2, the FED includes a front substrate 11 and a rear substrate 12 that are opposed to each other with a gap of 1 to 2 mm. Each of the front substrate 11 and the rear substrate 12 is configured by using a rectangular glass plate having a thickness of about 1 to 3 mm as an insulating substrate. The front substrate 11 and the rear substrate 12 are flat rectangular vacuum envelopes whose peripheral portions are bonded to each other through a rectangular frame-shaped side wall 13 and whose inside is maintained at a high vacuum of about 10 ⁻⁴ Pa. 10 is constituted.

  The vacuum envelope 10 includes a plurality of spacers 14 provided therein for supporting an atmospheric pressure load applied to the front substrate 11 and the rear substrate 12. As the spacer 14, a plate shape or a column shape can be adopted.

  The front substrate 11 has an image display surface on its inner surface. That is, the image display surface includes a phosphor screen 15, a metal back layer 20 disposed on the phosphor screen 15, a getter layer 22 disposed on the metal back layer 20, and the like.

  The phosphor screen 15 includes a phosphor layer 16 that emits red, green, and blue light, respectively, and a black light absorption layer 17 that is arranged in a matrix. These phosphor layers 16 may be formed in stripes or dots. The metal back layer 20 is formed of an aluminum film or the like and functions as an anode electrode. The getter layer 22 is formed of a metal film having gas adsorption characteristics, and gas remaining inside the vacuum envelope 10 and gas released from each substrate (for example, hydrogen, methane, oxygen, carbon dioxide, water vapor, etc.) To adsorb.

  The back substrate 12 includes a surface conduction electron-emitting device 18 on its inner surface. The electron-emitting device 18 functions as an electron source that excites the phosphor layer 16 of the phosphor screen 15. That is, the plurality of electron-emitting devices 18 are arranged in a plurality of columns and a plurality of rows corresponding to each pixel on the back substrate 12, and each emits an electron beam toward the phosphor layer 16. Each electron-emitting device 18 includes an electron emitting portion (not shown) and a pair of device electrodes for applying a voltage to the electron emitting portion. Further, a large number of wirings 21 for supplying a potential to the electron-emitting device 18 are provided in a matrix shape on the inner surface of the rear substrate 12, and end portions thereof are drawn out of the vacuum envelope 10.

  In such an FED, an anode voltage is applied to the image display surface including the phosphor screen 15 and the metal back layer 20 during the operation of displaying an image. Then, the electron beam emitted from the electron emitter 18 is accelerated by the anode voltage and collides with the phosphor screen 15. As a result, the phosphor layer 16 of the phosphor screen 15 is excited and emits light in a corresponding color. In this way, a color image is displayed on the image display surface.

Next, the structure of the getter layer applicable to the FED configured as described above will be described in more detail.
That is, in the FED according to the first embodiment, as shown in FIG. 3, the getter layer 22 is formed of a material obtained by mixing two or more kinds of metal materials. The getter layer 22 includes at least a first metal material that functions as a getter material and a second metal material that is different from the first metal material.

  As the first metal material, metal materials such as Ba (barium), V (vanadium), Ti (titanium), and Ta (tantalum) having gas adsorption characteristics can be selected. As the second metal material, it is desirable to be a metal material that can improve the film strength and tenacity such as yield strength. For example, a metal material such as Ti, Ni (nickel), Ta, Fe (iron) is selected. Is possible.

  The front substrate 11 having the above-described structure can be manufactured as follows. That is, a front substrate 11 having a phosphor screen 15 including a phosphor layer and a light shielding layer and a metal back layer 20 provided to overlap the phosphor screen 15 is prepared.

  Then, in a vacuum atmosphere, the getter layer 22 is formed on the metal back layer 20 with a material obtained by mixing two or more kinds of metal materials. More specifically, the surface having the metal back layer 20 of the front substrate 11 is disposed opposite to the vapor deposition source at a predetermined position in the vacuum chamber. A vapor deposition source consists of a material source of the 1st metal material and the 2nd metal material.

  Then, in a state where the vacuum chamber is at a predetermined degree of vacuum, the vapor deposition source is heated and evaporated by the heating mechanism, and the getter layer 22 mainly including the first metal material and the second metal material is formed on the surface of the front substrate 11. Form. The densities of the first metal material and the second metal material included in the getter layer 22 can be controlled by a film formation rate or the like.

  According to the first embodiment, the getter layer 22 is formed by mixing metal materials capable of improving the film strength as a metal material other than the getter material, so that the gas adsorbing ability is deteriorated so much. Therefore, the getter layer 22 can be prevented from being peeled off from the surface of the front substrate 11, and an image display device having high withstand voltage characteristics can be provided even under high vacuum. Therefore, a long-life and high-luminance image display can be achieved.

  Further, since the getter layer 22 has a single layer structure using a mixed material, it is not necessary to consider the boundary adhesive force between layers as compared with a structure in which a plurality of layers are laminated, and the peeling from the front substrate surface is more effective. Can be prevented.

  In the first embodiment, the first metal material functioning as a getter material may be formed so as to be distributed more densely on the back substrate 12 side than on the metal back layer 20 side. That is, the gas adsorption capacity of the getter layer 22 is further increased by setting the density of the first metal material functioning as a getter material on the surface side of the getter layer 22 in contact with the internal atmosphere of the vacuum envelope 10. It is possible.

  Next, a second embodiment will be described. In the FED according to the second embodiment, as shown in FIG. 4, the getter layer 22 is formed by laminating a plurality of thin films, and at least one of the thin films is a mixture of two or more kinds of metal materials. It is made of material.

  In the example shown in FIG. 4, the getter layer 22 includes a first thin film 31 disposed on the metal back layer 20 side and a second thin film 32 disposed on the back substrate 12 side of the first thin film 31. ing. In such a structure, the second thin film 32 arranged closest to the back substrate 12 includes at least a first metal material functioning as a getter material and a second metal material different from the first metal material. . The first thin film 31 mainly includes a third metal material.

  As the first metal material, a metal material having gas adsorption characteristics can be selected as in the first embodiment. Examples of the second metal material include a metal material having a physical property value such as a coefficient of thermal expansion that is close to that of the first thin film 31 disposed immediately below the second thin film 32, and a metal that can improve film strength and tenacity such as yield strength. The material is desirably a metal material such as Ti, Ta, Ni, or Fe.

  As the third metal material, a metal material that can be selected as the second metal material can be selected. The third metal material is also preferably a metal material having a physical property value such as a thermal expansion coefficient close to that of the metal back layer 20 directly below. As a desirable combination of metal materials, for example, when Ba is selected as the first metal material, Ti, Ta, Ni, Fe, etc. are selected as the second metal material, and Ti, Ta, etc. are selected as the third metal material. It is preferable to select. In addition, when Ti or Ta is selected as the first metal material, it may be preferable to select Ti, Ta, Ni, Fe, or the like as the second metal material, and Ba as the third metal material.

  The front substrate 11 having the above-described structure can be manufactured as follows. That is, a front substrate 11 having a phosphor screen 15 including a phosphor layer and a light shielding layer and a metal back layer 20 provided to overlap the phosphor screen 15 is prepared.

  When the getter layer 22 is formed by sequentially stacking a plurality of thin films on the metal back layer 20 in a vacuum atmosphere, at least one thin film is formed of a material in which two or more kinds of metal materials are mixed. More specifically, the surface having the metal back layer 20 of the front substrate 11 is disposed opposite to the vapor deposition source at a predetermined position in the vacuum chamber. The vapor deposition source is composed of a material source such as a third metal material included in the first thin film 31 and a first metal material and a second metal material included in the second thin film 32.

  Then, in a state where the vacuum chamber is at a predetermined degree of vacuum, the evaporation source is heated and evaporated by the heating mechanism, and the first thin film 31 mainly made of the third metal material is formed on the surface of the front substrate 11. Thereafter, the second thin film 32 mainly including the first metal material and the second metal material is formed on the first thin film 31 continuously. Thereby, the getter layer 22 having a laminated structure of the first thin film 31 and the second thin film 32 is formed on the surface of the front substrate 11.

  According to the second embodiment, the second thin film 32 disposed on the back substrate 12 side (surface) of the getter layer 22 is a metal capable of improving the film strength as a metal material other than the getter material. By forming the mixture of materials, it is possible to prevent the getter layer 22 from being peeled off from the surface of the front substrate 11 while maintaining the gas adsorption capability, and an image having high withstand voltage characteristics even under high vacuum. A display device can be provided. In addition, resistance to thermal shock can be increased. Therefore, a long-life and high-luminance image display can be achieved.

  The second thin film 32 includes the second metal material (or the same material as the third metal material) having a physical property value close to that of the third metal material that forms the first thin film immediately below, so that the first thin film 31 and the first thin film 32 The boundary adhesion force between the two thin films 32 can be improved (the boundary can be relaxed), and peeling from the surface of the front substrate 11 can be effectively prevented.

  Note that this second embodiment is also included in the second thin film 32 in order to further increase the gas adsorption capability of the getter layer 22 on the surface side of the getter layer 22 in contact with the internal atmosphere of the vacuum envelope 10. The first metal material functioning as a getter material may be formed so as to be distributed more densely on the back substrate 12 side than on the metal back layer 20 side.

  In the second embodiment, the second thin film 32 desirably includes a third metal material that forms the first thin film 31. For example, the second metal material included in the second thin film 32 may be the same as the third metal material. In this case, the second metal material in the second thin film 32 is formed to be more densely distributed on the first thin film 31 side than on the back substrate 12 side. Thereby, the adhesive force of the boundary of the 1st thin film 31 and the 2nd thin film 32 can further be improved, and peeling from the surface of the front substrate 11 can be prevented effectively.

  Next, a third embodiment will be described. In the FED according to the third embodiment, as shown in FIG. 5, the getter layer 22 is formed by stacking a plurality of thin films, and the intermediate layer disposed between the two thin films is composed of two or more kinds of metals. It is formed of a material obtained by mixing materials.

  In the example shown in FIG. 5, the getter layer 22 includes the first thin film 31 disposed on the metal back layer 20 side, the second thin film 32 disposed on the back substrate 12 side, and the first thin film 31 and the second thin film. The intermediate layer 33 is disposed between the intermediate layer 33 and the intermediate layer 33. In such a structure, the first thin film 31 mainly contains the first metal material, and the second thin film 32 arranged closest to the back substrate 12 is at least a second metal that functions as a getter material. Contains material. The intermediate layer 33 is mainly formed of a material obtained by mixing a first metal material and a second metal material.

  The front substrate 11 having the above-described structure can be manufactured as follows. That is, a front substrate 11 having a phosphor screen 15 including a phosphor layer and a light shielding layer and a metal back layer 20 provided to overlap the phosphor screen 15 is prepared.

  When the getter layer 22 is formed by sequentially laminating a plurality of thin films on the metal back layer 20 in a vacuum atmosphere, the intermediate layer 33 disposed between the first thin film 31 and the second thin film 32 is It forms with the material which mixed the 1st metal material and the 2nd metal material. More specifically, the surface having the metal back layer 20 of the front substrate 11 is disposed opposite to the vapor deposition source at a predetermined position in the vacuum chamber. A vapor deposition source consists of material sources, such as a 1st metal material and a 2nd metal material.

  Then, in a state where the inside of the vacuum chamber is at a predetermined degree of vacuum, the evaporation source is heated and evaporated by a heating mechanism, and the first thin film 31 mainly made of the first metal material is formed on the surface of the front substrate 11. Thereafter, the intermediate layer 33 including the first metal material and the second metal material is continuously formed on the first thin film 31. Thereafter, the second thin film 32 mainly made of the second metal material is formed on the intermediate layer 33 continuously. Thus, the getter layer 22 having a laminated structure of the first thin film 31, the intermediate layer 33, and the second thin film 32 is formed on the surface of the front substrate 11.

  According to the third embodiment, the intermediate layer 33 including the first metal material for forming the first thin film 31 and the second metal material for forming the second thin film 32 in the getter layer 22 having the multilayer stacked structure. By arranging between the first thin film 31 and the second thin film 32, the adhesion between the thin films can be improved, and the getter layer 22 having high film strength can be formed while maintaining the gas adsorption capability. Can do. For this reason, it is possible to prevent the getter layer 22 from being peeled off from the surface of the front substrate 11, and it is possible to provide an image display device having high withstand voltage characteristics even under high vacuum. In addition, resistance to thermal shock can be increased. Therefore, a long-life and high-luminance image display can be achieved.

  In the third embodiment, it is included in the second thin film 32 in order to further increase the gas adsorption capability of the getter layer 22 on the surface side of the getter layer 22 in contact with the internal atmosphere of the vacuum envelope 10. The second metal material functioning as a getter material may be formed so as to be distributed more densely on the back substrate 12 side than on the metal back layer 20 side.

  In the third embodiment, the density distribution of the first metal material and the second metal material included in the intermediate layer 33 may be non-uniform. That is, in the intermediate layer 33, the first metal material may be formed so as to be distributed more densely on the first thin film 31 side than on the second thin film 32 side. Thereby, the adhesive force between the 1st thin film 31 and the intermediate | middle layer 33 can be improved. In the intermediate layer 33, the second metal material may be formed so as to be more densely distributed on the second thin film 32 side than on the first thin film 31 side. Thereby, the adhesive force between the 2nd thin film 32 and the intermediate | middle layer 33 can be improved.

  For this reason, the boundary between each thin film becomes smooth and the getter layer 22 with high film | membrane intensity | strength can be formed. Therefore, peeling of the getter layer 22 from the front substrate surface can be more effectively prevented.

  As described above, according to this embodiment, by improving the film strength and tenacity such as the yield strength of the getter layer, or by improving the adhesion of each thin film at the boundary of the multilayer film, It is possible to prevent the getter layer from peeling off from the front substrate. For this reason, it is possible to improve and maintain the breakdown voltage characteristics. Therefore, even when the getter layer is formed on the surface of the front substrate, it is possible to provide a long-life image display device that can maintain a required withstand voltage.

  Note that the present invention is not limited to the above-described embodiment as it is, and can be embodied by modifying the constituent elements without departing from the spirit of the invention in the stage of implementation. Further, various inventions can be formed by appropriately combining a plurality of constituent elements disclosed in the embodiment. For example, some components may be deleted from all the components shown in the embodiment. Furthermore, you may combine suitably the component covering different embodiment.

FIG. 1 is a perspective view schematically showing an example of an FED manufactured by a manufacturing method and a manufacturing apparatus according to an embodiment of the present invention. FIG. 2 is a diagram schematically showing a cross-sectional structure along the line AA of the FED shown in FIG. FIG. 3 is a cross-sectional view schematically showing the structure of the getter layer according to the first embodiment applicable to the FED shown in FIG. FIG. 4 is a cross-sectional view schematically showing the structure of the getter layer according to the second embodiment applicable to the FED shown in FIG. FIG. 5 is a cross-sectional view schematically showing the structure of the getter layer according to the third embodiment applicable to the FED shown in FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Vacuum envelope 11 ... Front substrate 12 ... Back substrate 15 ... Phosphor screen 20 ... Metal back layer 22 ... Getter layer 31 ... First thin film 32 ... Second thin film 33 ... Intermediate layer

Claims (10)

A front substrate having a phosphor screen including a phosphor layer and a light shielding layer, a metal back layer provided on the phosphor screen, and a getter layer provided on the metal back layer;
A rear substrate disposed opposite to the front substrate and disposed with an electron-emitting device that emits electrons toward the phosphor screen;
The getter layer is formed of a material obtained by mixing two or more kinds of metal materials. The getter layer includes a first metal material functioning as a getter material and a second metal material different from the first metal material,
The image display device according to claim 1, wherein the first metal material is more densely distributed on the back substrate side than on the metal back layer side. A front substrate having a phosphor screen including a phosphor layer and a light shielding layer, a metal back layer provided on the phosphor screen, and a getter layer provided on the metal back layer;
A rear substrate disposed opposite to the front substrate and disposed with an electron-emitting device that emits electrons toward the phosphor screen;
The getter layer is formed by laminating a plurality of thin films,
Moreover, at least one thin film is formed of a material obtained by mixing two or more kinds of metal materials. The getter layer includes a first thin film disposed on the metal back layer side and a second thin film disposed on the back substrate side of the first thin film,
The second thin film includes a first metal material functioning as a getter material and a second metal material different from the first metal material,
The image display device according to claim 3, wherein the first metal material is distributed more densely on the back substrate side than on the metal back layer side.   5. The image display device according to claim 4, wherein the second thin film includes a metal material forming the first thin film, and is more densely distributed on the first thin film side than on the back substrate side. A front substrate having a phosphor screen including a phosphor layer and a light shielding layer, a metal back layer provided on the phosphor screen, and a getter layer provided on the metal back layer;
A rear substrate disposed opposite to the front substrate and disposed with an electron-emitting device that emits electrons toward the phosphor screen;
The getter layer is formed by laminating a plurality of thin films,
In addition, the intermediate layer disposed between the first thin film disposed on the metal back layer side and the second thin film disposed on the back substrate side includes the first metal material forming the first thin film and the second thin film. An image display device formed of a material obtained by mixing a second metal material forming a thin film.   In the intermediate layer, the first metal material is more densely distributed on the first thin film side than the second thin film side, and the second metal material is more densely distributed on the second thin film side than the first thin film side. The image display device according to claim 6. A method of manufacturing an image display device comprising: a front substrate having an image display surface; and a rear substrate having an electron-emitting device that emits electrons toward the image display surface,
Preparing the front substrate having a phosphor screen including a phosphor layer and a light-shielding layer, and a metal back layer provided over the phosphor screen;
A method of manufacturing an image display device, wherein a getter layer is formed on a metal back layer by a material in which two or more kinds of metal materials are mixed. A method of manufacturing an image display device comprising: a front substrate having an image display surface; and a rear substrate having an electron-emitting device that emits electrons toward the image display surface,
Preparing the front substrate having a phosphor screen including a phosphor layer and a light-shielding layer, and a metal back layer provided over the phosphor screen;
When forming a getter layer by sequentially laminating a plurality of thin films on the metal back layer, at least one thin film is formed of a material in which two or more kinds of metal materials are mixed. Manufacturing method. A method of manufacturing an image display device comprising: a front substrate having an image display surface; and a rear substrate having an electron-emitting device that emits electrons toward the image display surface,
Preparing the front substrate having a phosphor screen including a phosphor layer and a light shielding layer, and a metal back layer provided on the phosphor screen;
When forming a getter layer by sequentially laminating a plurality of thin films on the metal back layer, the getter layer is disposed between the first thin film disposed on the metal back layer side and the second thin film disposed on the back substrate side. The intermediate layer is formed of a material obtained by mixing a first metal material for forming the first thin film and a second metal material for forming the second thin film.

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