JP2005228793A - Method for forming gate electrode made of doped silicon film, and method for manufacturing device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a formation method of a gate electrode that does not require a large-scale device, is superior in the utilization ratio of raw materials and handling, and can reduce wastes, and to provide a manufacturing method of a device. <P>SOLUTION: In the method for forming the gate electrode containing the doped silicon film, a process for forming the doped silicon film provides a method for forming the gate electrode, including a process for coating the upper portion of the substrate with at least a liquid silicon material. In the method for manufacturing the device, the formation method of the gate electrode is used. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a technology related to devices in general, such as an integrated circuit, a thin film transistor, a photoelectric conversion device, or an electric device, and in particular, does not require a large-scale device, is excellent in use efficiency and handling of raw materials, The present invention relates to a method for manufacturing a gate electrode made of a doped silicon film, which can be reduced.

  Conventionally, doped polysilicon has been used as a gate electrode for integrated circuits, thin film transistors, and the like. The polysilicon gate electrode is generally formed by a process of forming a polysilicon film on the entire surface of the substrate by a vacuum process and then removing unnecessary portions by photolithography (Japanese Patent Laid-Open No. 2000-31116: Patent). Document 1, Japanese Patent Laid-Open No. 2000-236091: Patent Document 2, Japanese Patent Laid-Open No. 8-213181: Patent Document 3, and Japanese Patent Laid-Open No. 7-94718: Patent Document 4).

However, such a method requires (1) a large-scale apparatus, (2) poor use efficiency of the raw material, (3) difficult to handle because the raw material is a gas, and (4) a large amount of waste is generated. There are problems such as.
JP 2000-31116 A JP 2000-236091 A Japanese Patent Laid-Open No. 8-213481 JP-A-7-94718

The problem to be solved by the present invention is the problem of the prior art described above.
Accordingly, an object of the present invention is to provide a method for forming a gate electrode that does not require a large-scale apparatus, is excellent in the efficiency and handling of raw materials, and can reduce waste.
Another object of the present invention is to provide a device manufacturing method that does not require a large-scale apparatus, is excellent in the use efficiency and handling of raw materials, and can reduce waste.

  As a result of diligent research, the present inventors have achieved a method in which a gate electrode is directly formed by using a doped polysilicon film using a liquid silicon forming material without using a vacuum process or photolithography. Obtained knowledge of obtaining.

The present invention has been made on the basis of the above findings. This invention is provided.
1. A method of forming a gate electrode including a doped silicon film,
The step of forming the doped silicon film includes a step of applying at least a liquid silicon material over the substrate.

In a preferred embodiment of the present invention, a method for forming a gate electrode comprising a doped silicon film formed as follows is provided.
(1) A liquid silicon material containing a dopant for doping a silicon film is used.
(2) Ions are implanted into a silicon film formed using a liquid silicon material.
(3) A liquid silicon material containing a dopant for doping the silicon film is used, and further ion implantation is performed.

The present invention also provides the following 2. ~ 9. Each invention is provided.
2. 2. The method for forming a gate electrode according to 1, wherein the liquid silicon material includes a compound containing a Group 3B element of the periodic table or a Group 5B element of the periodic table.

  3. 3. The method for forming a gate electrode according to 2, further comprising the step of injecting the compound into the silicon material containing the applied compound after the step of applying the silicon material containing the compound over the substrate.

4). The step of forming the doped silicon film includes
2. The gate according to 1, further comprising a step of injecting a compound containing a Group 3B element of the periodic table or a Group 5B element of the periodic table into the applied silicon material after the step of applying the liquid silicon material over the substrate. Electrode formation method.

  5). The liquid silicon material includes at least one of a silane compound and / or higher order silane, a mixture of a silane compound and / or higher order silane, and a solution of the silane compound and / or higher order silane. A method for forming a gate electrode according to any one of the above.

  6). The method of forming a gate electrode according to any one of 1 to 5, wherein the step of applying the liquid silicon material uses a droplet coating method.

  7). 7. The method for forming a gate electrode according to 6, wherein the droplet coating method is an inkjet method or a dispensing method.

8). The step of forming the doped silicon film includes
Forming on the substrate a liquid repellent pattern that exhibits liquid repellency to the silicon liquid material and a lyophilic pattern that exhibits more lyophilicity than the liquid repellent pattern;
Applying the liquid silicon material on the lyophilic pattern. 8. A method of forming a gate electrode according to any one of 1 to 7, further comprising:

  9. A method for producing a device, wherein the method for forming a gate electrode according to any one of 9.1 to 8 is used.

  10. 10. The device manufacturing method according to 9, wherein the device is an integrated circuit, a thin film transistor, a photoelectric conversion device, or an electrical device.

  According to the present invention, there is provided a method for forming a gate electrode, which does not require a large-scale apparatus, is excellent in use efficiency and handling of raw materials, and can reduce waste. In addition, according to the present invention, there is provided a device manufacturing method that does not require a large-scale apparatus, is excellent in the use efficiency and handling of raw materials, and can reduce waste.

Hereinafter, the manufacturing method of the gate electrode of the present invention will be described based on its preferred embodiments.
The gate electrode manufacturing method according to the present invention is a method for forming a gate electrode including a doped silicon film as described above, and the step of forming the doped silicon film applies at least a liquid silicon material to the upper side of the substrate. Process.

  Since the present invention has such a configuration, the present invention includes a doped silicon film such as a doped polysilicon film, which is excellent in use efficiency and handling of raw materials and does not require a large-scale apparatus, and further reduces waste. A gate electrode can be formed.

  In a preferred embodiment of the present invention, a liquid silicon material containing a dopant for doping a silicon film is used as the liquid silicon material.

  As the dopant used here, a group 3B element of the periodic table such as phosphorus, boron or arsenic, which can form an n-type or p-type doped silicon film by activation by heat treatment and / or light treatment, or the number of periodic table A compound containing a Group 5B element is preferable, and specific examples include boron, yellow phosphorus, decaborane, and substances such as those described in JP-A No. 2000-31066.

  As the liquid silicon material used in the present invention, a liquid containing a silane compound and / or a higher order silane can be preferably used. Therefore, in this invention, what added the dopant to the silane compound and / or higher order silane or its solution as a liquid silicon material containing a dopant is used suitably.

Examples of the silane compound include a general formula Si _n X _m (wherein n is 3 or more and m is an independent integer of 4 or more, and X is a substituent such as a hydrogen atom and / or a halogen atom). The silane compound etc. which are represented by this is mentioned.

  Further, as this liquid silicon material, a high-order silane composition described in JP-A-2003-313299, that is, a composition containing a high-order silane obtained by photopolymerization by irradiating the silane compound with ultraviolet rays. It is also possible to use a composition containing a higher order silane obtained by photopolymerization by irradiating an ultraviolet ray to a solution of the silane compound.

Such higher order silanes are formed by photopolymerization of a photopolymerizable silane compound or a solution thereof by irradiating UV to the silane compound, and its molecular weight is used in conventional silicon film preparation methods. Compared to the silane compound (for example, Si ₆ H ₁₄ , the molecular weight is 182), it is so large that it cannot be compared (having a molecular weight of up to about 1800 has been confirmed). Higher-order silanes with such a huge molecular weight have a boiling point higher than the decomposition point, and can form a film before it evaporates. Formation can be performed. In addition, when such higher order silane is actually heated, it decomposes before reaching the boiling point, so a boiling point higher than the decomposition point cannot be determined experimentally. However, here, it means the temperature dependence of the vapor pressure and the boiling point at normal pressure as a theoretical value obtained by theoretical calculation.

  In addition, if a liquid silicon material containing such higher order silane is used, the boiling point of this higher order silane is higher than the decomposition point, so that it is rapidly heated at a high temperature before evaporating as in the prior art. There is no need. That is, it is possible to perform a process in which the heating rate is moderated or heating is performed at a relatively low temperature while reducing the pressure. This is because not only the bonding speed of silicon when forming a silicon layer can be controlled, but also a method of maintaining a temperature higher than the boiling point of the solvent, although not so high as to form a silicon film. This means that the solvent that causes the deterioration of the characteristics of silicon can be reduced more efficiently than the conventional method.

  As described above, the higher order silane formed by photopolymerization preferably has a boiling point higher than its decomposition point. Higher order silanes having a boiling point higher than the decomposition point are selected from the following preferable silane compounds as silane compounds as precursors, or UV having a preferable wavelength described below as irradiation UV, irradiation time, irradiation method, It can be easily obtained by selecting irradiation energy, a solvent to be used, and a purification method after UV irradiation.

  Further, the molecular weight distribution of this higher order silane can be controlled by the UV irradiation time, irradiation amount, and irradiation method. Further, this higher order silane is separated and purified using GPC, which is a general polymer purification method, after UV irradiation of the silane compound or its solution, thereby taking out a higher order silane compound having an arbitrary molecular weight. be able to. Further, purification can be performed by utilizing the difference in solubility between higher order silane compounds having different molecular weights. Further, purification by fractional distillation can be performed by utilizing the difference in boiling points between higher-order silane compounds having different molecular weights under normal pressure or reduced pressure. In this way, by controlling the molecular weight of the higher order silane in the liquid material, it is possible to obtain a high-quality silicon film in which the characteristic variation is further suppressed.

  Higher order silanes have higher boiling points and lower solubility in solvents as the molecular weight increases. For this reason, depending on the UV irradiation conditions, higher-order silane after photopolymerization may not be completely dissolved in the solvent and may be precipitated. In that case, insoluble components are removed by filtration using a microfilter, etc. Secondary silanes can be purified.

  The UV irradiation time is preferably from 0.1 seconds to 120 minutes, particularly preferably from 1 to 30 minutes, in order to obtain a high-order silane having a desired molecular weight distribution.

  For the liquid material containing a silane compound that is a precursor of such higher order silane, the viscosity and surface tension of the liquid material are adjusted together with the adjustment method relating to the molecular weight distribution of the higher order silane to be formed. Therefore, it can be easily controlled. This is because when a silicon film is formed from a liquid material, the greatest merit is that a patterning method using an ink jet method can be adopted. The fact that the tension can be easily controlled by the solvent serves as a very advantageous point.

The silane compound to be a precursor of the high-order silane is not particularly limited as long as having a photopolymerizable that can be polymerized by irradiation with UV, for example, in the above-mentioned general formula Si _n X _m (wherein, n represents 3 And m represents an independent integer of 4 or more, and X represents a substituent such as a hydrogen atom and / or a halogen atom).

As such a silane compound, a cyclic silane compound represented by the general formula Si _n X _2n (wherein n represents an integer of 3 or more and X represents a hydrogen atom and / or a halogen atom), In addition to a silane compound having two or more cyclic structures represented by the general formula Si _n X _2n-2 (wherein n represents an integer of 4 or more and X represents a hydrogen atom and / or a halogen atom), Examples thereof include all photopolymerizable silane compounds to which a photopolymerization process by ultraviolet irradiation can be applied, such as silicon hydride having at least one cyclic structure in the molecule and a halogen-substituted product thereof.

Specifically, examples having one cyclic structure include cyclotrisilane, cyclotetrasilane, cyclopentasilane, cyclohexasilane, cycloheptasilane, and the like, and those having two cyclic structures include 1 1, 1'-bicyclobutasilane, 1, 1'-bicyclopentasilane, 1, 1'-bicyclohexasilane, 1, 1'-bicycloheptasilane, 1, 1'-cyclobutasilylcyclopentasilane, 1, 1 '-Cyclobutasilylcyclohexasilane, 1,1'-cyclobutasilylcycloheptasilane, 1,1'-cyclopentasilylcyclohexasilane, 1,1'-cyclopentasilylcycloheptasilane, 1,1'- Cyclohexasilylcycloheptasilane, spiro [2.2] pentasilane, spiro [3.3] heptatasilane, spiro [4.4] nona Examples include silane, spiro [4.5] decasilane, spiro [4.6] undecasilane, spiro [5.5] undecasilane, spiro [5.6] undecasilane, spiro [6.6] tridecasilane, and the like. Examples thereof include silicon compounds in which the hydrogen atoms of the skeleton are partially substituted with SiH ₃ groups or halogen atoms. These may be used in combination of two or more.

Among these compounds, a silane compound having a cyclic structure in at least one position in the molecule is preferably used as a raw material from the viewpoint that it has extremely high reactivity with light and photopolymerization can be performed efficiently. Among these, Si _n X _2n such as cyclotetrasilane, cyclopentasilane, cyclohexasilane, cycloheptasilane (wherein n represents an integer of 3 or more, X is a hydrogen atom and / or a fluorine atom, a chlorine atom, A silane compound represented by a halogen atom such as a bromine atom or an iodine atom is particularly preferable because it has an advantage of being easily synthesized and purified in addition to the above reasons.

  The solvent used for the liquid material in the present invention is a solvent that dissolves the silane compound or higher silane formed by photopolymerization of the silane compound and does not react with the silane compound or higher silane. If it is, it will not specifically limit. As this solvent, one having a vapor pressure of 0.001 to 200 mmHg at room temperature is usually used.

  If the vapor pressure is higher than 200 mmHg, the solvent evaporates first when forming a coating film by coating, and it becomes difficult to form a good coating film. On the other hand, in the case where the vapor pressure is lower than 0.001 mmHg, when the coating film is similarly formed by coating, the drying becomes slow, and the solvent is likely to remain in the coating film of the silane compound or higher silane, and the post-process This is because it is difficult to obtain a high-quality silicon layer even after the heat treatment and / or the light irradiation treatment.

  Further, as the solvent, it is preferable to use a solvent having a boiling point at normal pressure of room temperature or higher and a silane compound having a large molecular weight or lower than 250 ° C. to 300 ° C. which is a decomposition point of higher order silane. . By using a solvent lower than the decomposition point of the higher order silane, it is possible to selectively remove only the solvent without decomposing the higher order silane by heating after coating, so that the solvent remains in the silicon layer. This is because it can be prevented and a film of higher quality can be obtained.

  The solvent used in the liquid silicon material containing a solvent, for example, a solvent in a silane compound solution, or a solvent in a silane compound solution as a precursor before UV irradiation in the case of forming a higher order silane, or after UV irradiation Specific examples of what becomes a solvent in a higher silane solution include n-hexane, n-heptane, n-octane, n-decane, dicyclopentane, benzene, toluene, xylene, durene, indene, tetrahydronaphthalene, deca In addition to hydrocarbon solvents such as hydronaphthalene and squalane, dipropyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, ethylene glycol methyl ethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol Ether solvents such as tilethyl ether, tetrahydrofuran, tetrahydropyran, 1,2-dimethoxyethane, bis (2-methoxyethyl) ether, p-dioxane, propylene carbonate, γ-butyrolactone, N-methyl-2-pyrrolidone, Examples include polar solvents such as dimethylformamide, acetonitrile, and dimethyl sulfoxide.

  The liquid silicon material used in the forming method of the present invention is preferably a solution containing a silane compound or a higher silane as a solute, and the solvent includes those exemplified above. The solute concentration is usually about 1 to 80% by weight and can be prepared according to the desired silicon film thickness. When it exceeds 80% by weight, a silane compound having a high molecular weight or higher order silane is likely to precipitate, and it becomes difficult to obtain a uniform coating film.

  Moreover, the liquid material for forming this silicon film can be adjusted to a viscosity in the range of usually 1 to 100 mPa · s, but the viscosity is appropriately selected according to the coating apparatus and the desired coating film thickness. be able to. When the viscosity is less than 1 mPa · s, coating becomes difficult, and when it exceeds 100 mPa · s, it is difficult to obtain a uniform coating film.

  Note that a small amount of a surface tension adjusting material such as a fluorine-based material, a silicone-based material, or a nonionic-based material can be added to the liquid silicon material as necessary as long as the target function is not impaired. This nonionic surface tension modifier improves the wettability of the solution to the application target, improves the leveling of the applied film, and helps prevent the occurrence of coating crushing and the occurrence of distorted skin. It is.

  After the liquid silicon material is applied to the substrate, the silane compound or higher-order silane composition is thermally decomposed by heat treatment and / or light treatment as necessary to form an amorphous silicon film or a polysilicon film. .

  In the present invention, a substrate can also be used, and the substrate is not limited to its kind and various materials can be selected. For example, in addition to an inflexible substrate such as silicon or glass, a flexible substrate (film) such as a film-like polyethylene terephthalate (PET) or polybutylene terephthalate (PBT) can also be used.

  As a method for applying the liquid silicon material to the substrate, it is preferable to use a general liquid droplet applying device such as an ink jet device, a dispenser, or a micro dispenser, that is, an ink jet method or a dispense method. When a silane compound or higher order silane is used as the liquid silicon material, it is denatured by reacting with water and oxygen. Therefore, the series of steps are preferably in a state where water and oxygen are not present. Therefore, the atmosphere during the series of steps is preferably performed in an inert gas such as nitrogen, helium, or argon. Furthermore, what mixed reducing gas, such as hydrogen, as needed is preferable. Further, it is desirable to use a solvent or additive from which water or oxygen has been removed.

  In the present invention, a normal method can be adopted as the step of forming the liquid silicon material containing the dopant in the doped silicon film. For example, after applying a liquid silicon material containing a solvent, heat treatment is performed to remove the solvent. The heating temperature varies depending on the type of solvent used and the boiling point (vapor pressure), but is usually 100 ° C to 200 ° C. The atmosphere is preferably performed in the same inert gas as nitrogen, helium, argon, etc. as in the coating step. At this time, the solvent can be removed at a lower temperature by reducing the pressure of the entire system. Thereby, deterioration by the heat | fever of a board | substrate can be reduced. Next, the dopant-containing liquid silicon material from which the solvent has been removed is converted into a gate electrode made of a doped silicon film by heat treatment and / or light treatment.

  The doped silicon film (gate electrode) obtained by the formation method of the present invention is amorphous or polycrystalline, but in the case of heat treatment, it is generally amorphous when the ultimate temperature is about 550 ° C. or lower, and a temperature higher than that. Then, a polycrystalline silicon film can be obtained. When it is desired to obtain an amorphous silicon film, it is preferably 300 ° C. to 550 ° C., more preferably 350 ° C. to 500 ° C. When the reached temperature is less than 300 ° C., the thermal decomposition of the liquid silicon material does not proceed sufficiently, and a silicon film having a sufficient thickness may not be formed.

  The atmosphere for the heat treatment is preferably an atmosphere mixed with an inert gas such as nitrogen, helium or argon, or a reducing gas such as hydrogen. When it is desired to obtain a polycrystalline silicon film (polysilicon film), the amorphous silicon film obtained above can be converted into a polycrystalline silicon film by irradiating a laser.

  On the other hand, the light source used for light treatment includes low pressure or high pressure mercury lamp, deuterium lamp or discharge light of rare gas such as argon, krypton, xenon, YAG laser, argon laser, carbon dioxide gas Examples thereof include excimer lasers such as laser, XeF, XeCl, XeBr, KrF, KrCl, ArF, and ArCl. These light sources generally have an output of 10 to 5000 W, but 100 to 1000 W is usually sufficient. The wavelength of these light sources is not particularly limited as long as the liquid silicon material absorbs even a little, but is usually 170 nm to 600 nm. In addition, the use of laser light is particularly preferable from the viewpoint of conversion efficiency into a polycrystalline silicon film. The temperature during these light treatments is usually from room temperature to 1500 ° C., and can be appropriately selected according to the semiconductor characteristics of the resulting silicon film.

The present invention can also provide a method for manufacturing a device including a gate electrode made of a doped silicon film by using the above-described gate electrode formation method.
According to such a device manufacturing method, a large-scale apparatus is not required, the use efficiency and handling of raw materials are excellent, and waste can be reduced. And as a device provided with the gate electrode which consists of a dope silicon film which concerns on this invention, it can apply suitably as an integrated circuit, a thin-film transistor, a photoelectric conversion apparatus, or an electric equipment etc., for example. In addition, the photoelectric conversion device includes a solar battery and the like, and the electric equipment includes a mobile phone and a display.

  In the device manufacturing method according to the present invention, at least the gate electrode formation method described above is used (for example, a gate electrode made of a doped silicon film is formed using a liquid silicon material containing a dopant for doping the silicon film). As long as the other device creation process is used, a normal process can be adopted. For example, when a thin film transistor is formed, a channel silicon film, a gate insulating film, annealing, etching, a source-drain electrode, an interlayer insulating film, and the like can be formed by a normal process.

  Further, when forming a gate electrode made of a doped silicon film according to the present invention, a lyophilic / liquid repellent pattern is formed on the substrate, and the gate electrode is formed on the lyophilic surface. It is suitably performed.

  As this lyophobic / lyophilic pattern, for example, a pattern obtained by patterning lyophobic single molecules can be used. Examples of the monomolecular film used in this case include any monomolecular film such as an organic molecular film formed on a substrate, and particularly an organic compound ultrathin film, particularly a self-assembled monolayer film (self assembled monolayers: SAM) is preferable in the following points. That is, the self-assembled monomolecular film is a film formed by orienting molecules having a binding functional group capable of reacting with atoms constituting an underlayer such as a substrate. Unlike the resin film such as a photoresist material, the self-assembled film is formed by orienting single molecules, so that the film thickness can be extremely reduced and an extremely uniform film can be obtained. Thereby, it can be set as the board | substrate which provided the outstanding liquid repellency and lyophilic property.

  In addition, after forming the gate electrode made of the doped silicon film according to the present invention, it is preferable to perform ion implantation (ion implantation) in order to improve the conduction characteristics of the gate electrode. As the ion implantation method, a method generally used for forming a silicon film containing n-type and p-type dopants can be employed without particular limitation. For example, methods described in Japanese Patent Application Laid-Open No. 6-224220 and Japanese Patent Application Laid-Open No. 7-335890 (technology related to ion implantation into the gate electrode) can be employed.

  Hereinafter, the present invention will be described more specifically with reference to examples of the present invention. However, the present invention is not limited to the examples.

A manufacturing process (cross-sectional view) of a gate electrode and a thin film transistor according to Example 1 is shown in FIG.
A channel silicon film 2 made of an amorphous silicon film was formed on the glass substrate 1 by performing photo-etching using the CVD method.
After recrystallizing this silicon film into a polysilicon film by excimer laser annealing, a gate insulating film 3 was formed on the polysilicon film 2 by TEOS-CVD (FIG. 1 (1)). Further, a toluene solution containing 0.01% by weight of octadecyltriethoxysilane was spin-coated at 2000 rpm on this substrate to form a liquid-repellent monomolecular film 4 (SAM film) (FIG. 1 (2) )).

  Next, UV light of a 500 W high-pressure mercury lamp was irradiated for 20 minutes through the photomask 5, and the monomolecular film 4 was removed in a pattern to form a gate electrode (FIG. 1 (3)). At this time, when the physical properties of the substrate surface were examined, only the removed portion was changed to a lyophilic surface (lyophilic region a).

  Next, a solution in which 2 g of cyclotetrasilane and 0.1 g of phosphorus chloride are dissolved in 30 ml of xylene is subjected to pattern coating on the lyophilic region a by using an ink jet method in a nitrogen atmosphere and baked at 600 ° C. for 1 hour. Thus, a doped polysilicon gate electrode 6 was formed (FIG. 1 (4)).

  Using this gate electrode 6 as a mask, phosphorus ions were implanted to improve the conduction characteristics of the gate electrode 6, and at the same time, source and drain regions s and d were formed in the silicon film 2 (FIG. 1 (5)).

  Next, activation annealing, contact hole etching, source and drain electrodes 7 and 8 and interlayer insulating film 9 were formed, and the thin film transistor 10 could be manufactured (FIG. 1 (6)).

  The present invention does not require a large-scale apparatus, is excellent in the use efficiency and handling of raw materials, and further can reduce waste, and without requiring a large-scale apparatus, The present invention has industrial applicability as a device manufacturing method that is excellent in the use efficiency and handling of raw materials and can reduce waste.

FIG. 1 is a schematic explanatory diagram illustrating a manufacturing process of a gate electrode and a thin film transistor according to the first embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 10 ... Thin film transistor, 1 ... Glass substrate, 2 ... Silicon film, 3 ... Gate insulating film, 4 ... Monomolecular film, 5 ... Photomask, 6 ... Dope polysilicon Gate electrode, 7, 8 ... Source / drain electrode, 9 ... Interlayer insulating film

Claims (10)

A method of forming a gate electrode including a doped silicon film,
The step of forming the doped silicon film includes a step of applying at least a liquid silicon material over the substrate.   2. The method for forming a gate electrode according to claim 1, wherein the liquid silicon material includes a compound containing a Group 3B element of the periodic table or a Group 5B element of the periodic table.   3. The method of forming a gate electrode according to claim 2, further comprising a step of injecting the compound into the silicon material containing the applied compound after the step of applying the silicon material containing the compound over the substrate. The step of forming the doped silicon film includes
The step of injecting a compound containing a Group 3B element of the periodic table or a Group 5B element of the periodic table into the applied silicon material after the step of applying the liquid silicon material over the substrate. Of forming a gate electrode.   The liquid silicon material includes at least one of a silane compound and / or higher order silane, a mixture of a silane compound and / or higher order silane, and a solution of the silane compound and / or higher order silane. 5. The method for forming a gate electrode according to any one of 4 above.   The method for forming a gate electrode according to claim 1, wherein the step of applying the liquid silicon material uses a droplet coating method.   The method for forming a gate electrode according to claim 6, wherein the droplet coating method is an inkjet method or a dispensing method. The step of forming the doped silicon film includes
Forming on the substrate a liquid repellent pattern that exhibits liquid repellency to the silicon liquid material and a lyophilic pattern that exhibits more lyophilicity than the liquid repellent pattern;
The method for forming a gate electrode according to claim 1, further comprising: applying the liquid silicon material on the lyophilic pattern.   A method for manufacturing a device, wherein the method for forming a gate electrode according to claim 1 is used. The device manufacturing method according to claim 9, wherein the device is an integrated circuit, a thin film transistor, a photoelectric conversion device, or an electric device.

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