JP2005206434A - Manufacturing process of microparticle dispersion glass and ultraviolet cut filter - Google Patents
Manufacturing process of microparticle dispersion glass and ultraviolet cut filter Download PDFInfo
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- JP2005206434A JP2005206434A JP2004016059A JP2004016059A JP2005206434A JP 2005206434 A JP2005206434 A JP 2005206434A JP 2004016059 A JP2004016059 A JP 2004016059A JP 2004016059 A JP2004016059 A JP 2004016059A JP 2005206434 A JP2005206434 A JP 2005206434A
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- 239000011521 glass Substances 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- 239000011859 microparticle Substances 0.000 title abstract 4
- 239000006185 dispersion Substances 0.000 title abstract 3
- 239000000126 substance Substances 0.000 claims abstract description 25
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 20
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 19
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 19
- 239000011593 sulfur Substances 0.000 claims abstract description 19
- 150000001875 compounds Chemical class 0.000 claims abstract description 18
- 238000006467 substitution reaction Methods 0.000 claims abstract description 18
- 239000000203 mixture Substances 0.000 claims abstract description 16
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000002245 particle Substances 0.000 claims abstract description 15
- 239000011669 selenium Substances 0.000 claims abstract description 15
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 15
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 10
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000011787 zinc oxide Substances 0.000 claims abstract description 10
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000011701 zinc Substances 0.000 claims abstract description 5
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 3
- 239000001301 oxygen Substances 0.000 claims abstract description 3
- 239000010419 fine particle Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 14
- 230000000903 blocking effect Effects 0.000 claims description 9
- 229910007709 ZnTe Inorganic materials 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 claims description 5
- 150000002611 lead compounds Chemical class 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 15
- 239000004065 semiconductor Substances 0.000 abstract description 14
- 238000002844 melting Methods 0.000 abstract description 9
- 230000008018 melting Effects 0.000 abstract description 9
- 238000001816 cooling Methods 0.000 abstract description 4
- 238000002156 mixing Methods 0.000 abstract description 3
- 239000011159 matrix material Substances 0.000 abstract 1
- 238000010521 absorption reaction Methods 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 229940065285 cadmium compound Drugs 0.000 description 3
- 150000001662 cadmium compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 3
- 238000001556 precipitation Methods 0.000 description 3
- -1 addition amount Substances 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 229910000464 lead oxide Inorganic materials 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- QDWGRSGGOUPRJF-UHFFFAOYSA-N O.O.[O--].[Zn++] Chemical compound O.O.[O--].[Zn++] QDWGRSGGOUPRJF-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005816 glass manufacturing process Methods 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/11—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen
- C03C3/112—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen containing fluorine
- C03C3/115—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen containing fluorine containing boron
- C03C3/118—Glass compositions containing silica with 40% to 90% silica, by weight containing halogen or nitrogen containing fluorine containing boron containing aluminium
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C4/00—Compositions for glass with special properties
- C03C4/08—Compositions for glass with special properties for glass selectively absorbing radiation of specified wave lengths
- C03C4/085—Compositions for glass with special properties for glass selectively absorbing radiation of specified wave lengths for ultraviolet absorbing glass
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Dispersion Chemistry (AREA)
- Glass Compositions (AREA)
- Optical Filters (AREA)
Abstract
Description
本発明は、硫黄、セレンまたはテルルを含む半導体化合物を微粒子として分散させているガラスの製造方法、およびそのガラスを用いた紫外線遮断フィルターに関するものである。
The present invention relates to a method for producing glass in which a semiconductor compound containing sulfur, selenium or tellurium is dispersed as fine particles, and an ultraviolet blocking filter using the glass.
微粒子を分散させたガラスは、これまでも光の吸収材として利用されてきている。例えばカドミウム化合物の半導体微粒子を分散させた材料は、それらの特殊なバンド構造に由来する吸収領域と透過領域の急激な推移を利用して光のシャープカットフィルターとして利用されている。
紫外線領域の光の遮断材としては、特許文献１または特許文献２に記載されているようなＩ−ＶＩＩ族半導体微粒子を分散させた材料が提供されている。しかしながら、これらの材料は半導体微粒子を析出させる際に熱処理を必要とする。加えてガラス製造過程においても中性または還元雰囲気での溶融作業が必要であり特殊な環境下での製造を必要とする。また、微粒子の大きさを制御させたり揃えたりするためにも、熱処理を施す必要がある。
As the light blocking material in the ultraviolet region, a material in which I-VII group semiconductor fine particles as described in Patent Document 1 or
一方、前記したカドミウム化合物の半導体微粒子を含む光の吸収ガラスは、吸収領域と透過領域の間での急峻な透過特性の推移があり、光のカットフィルターとしては好ましいが、紫外線領域の特定の波長の光をその波長に応じて選択的に遮断するガラスとすることが出来ない。加えて、前述のＩ−ＶＩＩ族半導体微粒子の場合と同様に、微粒子の大きさを制御させたり揃えたりするためには、熱処理を施す必要がある。 On the other hand, the light-absorbing glass containing the semiconductor fine particles of the cadmium compound described above has a sharp transition in transmission characteristics between the absorption region and the transmission region, and is preferable as a light cut filter, but has a specific wavelength in the ultraviolet region. It is not possible to make a glass that selectively blocks the light according to its wavelength. In addition, as in the case of the aforementioned I-VII group semiconductor fine particles, it is necessary to perform a heat treatment in order to control and align the size of the fine particles.
これらの化合物半導体微粒子分散ガラスにおいては波長を制御するためにはカドミウム化合物半導体の組成、添加量や微粒子析出温度・時間条件を変化させるのが普通であった。更に前述の様に従来の微粒子分散ガラスでは、熱処理をすることにより微粒子の粒径を揃えていた。ところが、この熱処理温度に光学的なフィルター特性が依存していたため、図4に見られるように、更に熱処理より高い温度が加わるとその光学的なフィルターとしての特性が変化してしまうという問題もあった。 In these compound semiconductor fine particle-dispersed glasses, in order to control the wavelength, it is common to change the composition, addition amount, and fine particle deposition temperature / time conditions of the cadmium compound semiconductor. Further, as described above, in the conventional fine particle-dispersed glass, the particle diameters of the fine particles are made uniform by heat treatment. However, since the optical filter characteristics depend on the heat treatment temperature, as shown in FIG. 4, there is a problem that the characteristics of the optical filter change when a temperature higher than the heat treatment is applied. It was.
これに対して、上記と同様に特定な波長の光を遮断する目的で多層膜をコーティングした材料が用いられることもある。しかしこの場合は、光の遮断効果には入射角度依存性があり、一定方向の光しか遮断する効果が得られないという問題がある。この為、用途が限られ、また使用する場合でも光の入射方向に対して制約を受けるので使い勝手が非常に悪いものとなっていた。
On the other hand, a material coated with a multilayer film may be used for the purpose of blocking light of a specific wavelength as described above. However, in this case, the light blocking effect has an incident angle dependency, and there is a problem that an effect of blocking only light in a certain direction can be obtained. For this reason, the usage is limited, and even when it is used, it is restricted in the incident direction of light, so that it is very inconvenient.
上記の課題を解決するために、本発明の第１の態様に係る微粒子分散ガラスの製造方法は、まず母材としてのガラス材と、少なくとも硫黄、セレン、またはテルルのいずれか１種以上を含む置換物質を含有する化合物と、酸化亜鉛とを混合して混合物とする。このとき、混合物はこれら硫黄、セレン、テルルなどの置換物質の添加濃度を予め所定の粒径となるように調整しておくことが好ましい。
そして、当該混合物を加熱溶融した後冷却して、前記酸化亜鉛の酸素と前記置換物質とを置換反応させ、亜鉛と置換物質とからなる微粒子をガラス中に析出させて微粒子分散ガラスを製造する。
In order to solve the above problems, the method for producing a fine particle-dispersed glass according to the first aspect of the present invention first includes a glass material as a base material and at least one of sulfur, selenium, and tellurium. A compound containing a substitution substance and zinc oxide are mixed to form a mixture. At this time, it is preferable that the mixture is adjusted in advance so that the addition concentration of the substitutional substances such as sulfur, selenium, and tellurium has a predetermined particle size.
Then, the mixture is heated and melted and then cooled to cause a substitution reaction between the oxygen of the zinc oxide and the substitution substance, and fine particles composed of zinc and the substitution substance are precipitated in the glass to produce a fine particle-dispersed glass.
こうして作成された亜鉛と置換物質との半導体化合物からなる微粒子が分散されたガラスは、特に熱処理をしなくとも置換物質の添加濃度によってその粒径が制御できる。従って置換物質の添加濃度、即ち粒径の大きさに応じて吸収波長の異なる光学フィルターとすることができる。特に、紫外線領域において任意の波長以下を選択的に遮断できる紫外線遮断フィルターとして用いることができる。
The glass in which fine particles made of a semiconductor compound of zinc and a substitute substance dispersed in this way are dispersed can be controlled in particle size by the addition concentration of the substitute substance without any particular heat treatment. Therefore, it is possible to obtain an optical filter having different absorption wavelengths according to the addition concentration of the substitution substance, that is, the size of the particle diameter. In particular, it can be used as an ultraviolet blocking filter capable of selectively blocking below an arbitrary wavelength in the ultraviolet region.
本発明では、微粒子の析出は溶解とその後の冷却など製造条件にほとんど依存せず、硫黄などの置換物質の添加濃度によりほぼ粒径が決定する。従って、光の吸収波長帯を制御できる。
In the present invention, the precipitation of fine particles hardly depends on the production conditions such as dissolution and subsequent cooling, and the particle size is almost determined by the addition concentration of a substitution substance such as sulfur. Therefore, the absorption wavelength band of light can be controlled.
本発明者らは、熱処理を必要としない紫外線を遮断する新しいガラスを得るべく研究を重ねてきた。その結果、酸化亜鉛を含有させたガラス中に酸化亜鉛の酸素と、置換物質として混入する硫黄、セレン、またはテルルを含む化合物中の硫黄、セレン、またはテルルの置換反応を高効率に促進することにより、成形後熱処理することなくＺｎＳ、ＺｎＳｅ、またはＺｎＴｅ微粒子を形成することに成功した。 The inventors of the present invention have made researches to obtain new glasses that block ultraviolet rays that do not require heat treatment. As a result, it is possible to efficiently promote the substitution reaction of sulfur, selenium, or tellurium in a compound containing zinc oxide oxygen and sulfur, selenium, or tellurium mixed as a substitute substance in the glass containing zinc oxide. Thus, ZnS, ZnSe, or ZnTe fine particles were successfully formed without heat treatment after molding.
本発明の製造方法の一例について、実施例１〜５に基づいて以下に説明する。
まず、表１に記載されているような配合比で、母材となるガラスと、酸化亜鉛と、置換物質として硫黄またはセレンと、さらにこの置換物質と溶融中に一時的に化合物を生成するための酸化鉛とを混合し実施例１〜５に相当する原料混合物を作る。
First, in order to generate a compound temporarily during melting with the glass as a base material, zinc oxide, sulfur or selenium as a substitute material, and further with the blend ratio as described in Table 1 The raw material mixture corresponding to Examples 1 to 5 is made by mixing with lead oxide.
このとき置換物質は、硫黄、セレンなど単体で混合されても良いし、酸化物等の化合物とされて混合されても良い。また、実施例では硫黄およびセレンを用いたが、テルルでも同様の効果が得られると考えられる。置換物質を含有する化合物としては、これらの物質が少なくとも1種以上含む化合物でもよい。 At this time, the substitution substance may be mixed alone such as sulfur and selenium, or may be mixed as a compound such as an oxide. Moreover, although sulfur and selenium were used in the examples, it is considered that the same effect can be obtained with tellurium. The compound containing a substitution substance may be a compound containing at least one of these substances.
一方、溶融中に一時的に化合物を生成するために必要な鉛は、混合物中では実施例の様に酸化鉛やその他の化合物の形でも良いし鉛単体でも良い。
ここで比較のために表１に示されているような配合比で比較例1も作成した。この比較例１は、以後に示されているような実施例１〜５と同様な製造過程で作成した。
On the other hand, the lead necessary for temporarily generating a compound during melting may be in the form of lead oxide or other compounds in the mixture as in the embodiment, or lead alone.
Here, for comparison, Comparative Example 1 was also prepared with a blending ratio as shown in Table 1. This Comparative Example 1 was prepared in the same manufacturing process as Examples 1 to 5 as shown below.
次に、この実施例１〜５の混合物を摂氏１，３５０℃まで加熱して２時間保持し溶融ガラス状態とする。このように高温に加熱された状態で、添加されていた鉛と置換物質とは、酸化亜鉛が共存する状況では、次の化学式に表されるように変化する。
ＰｂＡ＋ＺｎＯ → ＰｂＯ＋ＺｎＡ
（ここで、Ａは、硫黄またはセレン。）
Next, the mixture of Examples 1 to 5 is heated to 1,350 ° C. and held for 2 hours to obtain a molten glass state. Thus, in the state heated to high temperature, the added lead and the substitute substance change as represented by the following chemical formula in the situation where zinc oxide coexists.
PbA + ZnO → PbO + ZnA
(Here, A is sulfur or selenium.)
本発明で重要なことは、溶融後も、この硫黄またはセレンが十分にガラス中に残存し、かつ均等に分散されていることである。その為に、溶融時には、溶融ポットに蓋をして、溶融時間、温度を適切に制御する必要があるが、適宜最適条件を選択すれば良い。 What is important in the present invention is that the sulfur or selenium remains sufficiently in the glass even after melting and is evenly dispersed. Therefore, at the time of melting, it is necessary to cover the melting pot and appropriately control the melting time and temperature, but the optimum conditions may be selected as appropriate.
このように高温で溶融された後、およそ５℃／ｍｉｎ（分）の割合で急速冷却する。なお、成形ガラスの歪を取るためのアニール温度は５３０℃およそ６０分であるがその間に粒径の変化は起こらない。すると、溶融時に亜鉛と結びついた置換物質が半導体化合物となり微粒子となって析出する。本発明では前述の様に、適切な条件で溶融されているので、半導体化合物の元となる硫黄またはセレンは十分にガラス中に残存しており、またこの濃度によって粒径が決まるので、溶融条件や冷却条件によらず、一定の粒径の微粒子が析出する。 After being melted at such a high temperature, it is rapidly cooled at a rate of approximately 5 ° C./min (minutes). The annealing temperature for removing the distortion of the molded glass is about 530 ° C. for about 60 minutes, but the particle size does not change during that time. Then, the substituted substance combined with zinc at the time of melting becomes a semiconductor compound and precipitates as fine particles. In the present invention, as described above, since it is melted under appropriate conditions, sulfur or selenium as a base of the semiconductor compound is sufficiently left in the glass, and the particle size is determined by this concentration. Regardless of the cooling conditions, fine particles with a constant particle size are deposited.
一般に析出させる微粒子の大きさを変化させることにより、光の吸収する波長を変化させることが可能である。これはＺｎＳ、ＺｎＳｅ、ＺｎＴｅ等のバンドギャップに依存している。本発明においては、析出微粒子が１〜１００ｎｍ程度であるため量子効果によりバンドギャップが変化し、それにより光の吸収波長帯が変化する。従って、微粒子の粒径を制御することにより吸収波長帯を容易に制御することが可能である。 In general, it is possible to change the wavelength of light absorption by changing the size of fine particles to be deposited. This depends on the band gap of ZnS, ZnSe, ZnTe or the like. In the present invention, since the precipitated fine particles are about 1 to 100 nm, the band gap changes due to the quantum effect, thereby changing the light absorption wavelength band. Therefore, the absorption wavelength band can be easily controlled by controlling the particle size of the fine particles.
図１に示されているように、実施例１〜４のガラスにおける光の吸収波長帯は、硫黄の濃度に応じて変化している。即ち、硫黄の濃度に応じて粒径が変化していると言える。また実施例５から、添加される置換物質によっても光の吸収波長帯は変化していることが分かる。即ち、添加される置換物質によっても粒径が異なるといえる。 As shown in FIG. 1, the absorption wavelength band of light in the glasses of Examples 1 to 4 varies depending on the concentration of sulfur. That is, it can be said that the particle size changes according to the concentration of sulfur. In addition, it can be seen from Example 5 that the light absorption wavelength band also varies depending on the added substitute substance. In other words, it can be said that the particle diameter varies depending on the substituted substance to be added.
本発明によれば、添加する置換物質の濃度を調整することによってのみ、析出する微粒子の粒径が変化し、図３の比較例１や、図４に見られる従来例のように、熱処理による光の吸収波長帯の変化を伴わない。従って図２に見られるように、本発明により作られた微粒子分散ガラスは、熱処理によっても光の吸収波長帯が変化せず、粒径が変化することがない。 According to the present invention, the particle size of the precipitated fine particles is changed only by adjusting the concentration of the substitutional substance to be added, and by heat treatment as in Comparative Example 1 in FIG. 3 and the conventional example shown in FIG. There is no change in the light absorption wavelength band. Therefore, as can be seen in FIG. 2, in the fine particle-dispersed glass made according to the present invention, the light absorption wavelength band does not change and the particle size does not change even by heat treatment.
このように本発明においては、微粒子析出は溶解とその後の冷却に依存せず、硫黄など置換物質の添加濃度によりほぼ決定するという特長を有し、製造条件にほとんど依存しない。 As described above, in the present invention, the precipitation of fine particles does not depend on dissolution and subsequent cooling, but has a feature that it is substantially determined by the addition concentration of a substitute substance such as sulfur, and hardly depends on manufacturing conditions.
なお、本発明による母材のガラスは組成が限定されるものではなく、様々なガラス系においてＺｎＳ、ＺｎＳｅ、またはＺｎＴｅ等の半導体化合物の微粒子を析出させることが可能である。
Note that the glass of the base material according to the present invention is not limited in composition, and fine particles of semiconductor compounds such as ZnS, ZnSe, or ZnTe can be precipitated in various glass systems.
本発明により吸収波長帯を制御できるので、目的領域の紫外光線を取り出すことが出来る紫外線領域のガラスフィルターに適用できる。また、これまで記憶媒体に対する発光体としては、６００ｎｍ付近の半導体レーザが主流で使用されてきたが、これら光源の短波長化の要求がある。本発明は、これに対応できるフィルターに適用できる。更に、紫外線自体にある人体に有害な波長や、材料を早く劣化させるような波長を選択的に遮断する光学フィルターに適用できる。
Since the absorption wavelength band can be controlled according to the present invention, the present invention can be applied to a glass filter in the ultraviolet region from which ultraviolet light in the target region can be extracted. In addition, as a light emitter for a storage medium, a semiconductor laser having a wavelength near 600 nm has been mainly used, but there is a demand for shortening the wavelength of these light sources. The present invention can be applied to a filter that can cope with this. Furthermore, the present invention can be applied to an optical filter that selectively blocks wavelengths that are harmful to the human body in the ultraviolet rays themselves or wavelengths that rapidly degrade materials.
Claims (6)
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| Application Number | Priority Date | Filing Date | Title |
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| JP2004016059A JP2005206434A (en) | 2004-01-23 | 2004-01-23 | Manufacturing process of microparticle dispersion glass and ultraviolet cut filter |
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| JP2004016059A JP2005206434A (en) | 2004-01-23 | 2004-01-23 | Manufacturing process of microparticle dispersion glass and ultraviolet cut filter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007058185A1 (en) | 2005-11-15 | 2007-05-24 | Isuzu Glass Co., Ltd. | Blue-violet light blocking glass |
| WO2008123378A1 (en) | 2007-03-29 | 2008-10-16 | Isuzu Glass Co., Ltd. | Method for production of distributed refractive index-type optical element having ultraviolet ray-absorbing ability |
-
2004
- 2004-01-23 JP JP2004016059A patent/JP2005206434A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007058185A1 (en) | 2005-11-15 | 2007-05-24 | Isuzu Glass Co., Ltd. | Blue-violet light blocking glass |
| WO2008123378A1 (en) | 2007-03-29 | 2008-10-16 | Isuzu Glass Co., Ltd. | Method for production of distributed refractive index-type optical element having ultraviolet ray-absorbing ability |
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