JP2005203604A5 - - Google Patents

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Publication number
JP2005203604A5
JP2005203604A5 JP2004009208A JP2004009208A JP2005203604A5 JP 2005203604 A5 JP2005203604 A5 JP 2005203604A5 JP 2004009208 A JP2004009208 A JP 2004009208A JP 2004009208 A JP2004009208 A JP 2004009208A JP 2005203604 A5 JP2005203604 A5 JP 2005203604A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004009208A
Other languages
Japanese (ja)
Other versions
JP2005203604A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004009208A priority Critical patent/JP2005203604A/ja
Priority claimed from JP2004009208A external-priority patent/JP2005203604A/ja
Publication of JP2005203604A publication Critical patent/JP2005203604A/ja
Publication of JP2005203604A5 publication Critical patent/JP2005203604A5/ja
Withdrawn legal-status Critical Current

Links

JP2004009208A 2004-01-16 2004-01-16 Iii族窒化物系化合物半導体光素子 Withdrawn JP2005203604A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004009208A JP2005203604A (ja) 2004-01-16 2004-01-16 Iii族窒化物系化合物半導体光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004009208A JP2005203604A (ja) 2004-01-16 2004-01-16 Iii族窒化物系化合物半導体光素子

Publications (2)

Publication Number Publication Date
JP2005203604A JP2005203604A (ja) 2005-07-28
JP2005203604A5 true JP2005203604A5 (de) 2008-03-27

Family

ID=34822316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004009208A Withdrawn JP2005203604A (ja) 2004-01-16 2004-01-16 Iii族窒化物系化合物半導体光素子

Country Status (1)

Country Link
JP (1) JP2005203604A (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080074948A (ko) * 2005-11-04 2008-08-13 더 리전츠 오브 더 유니버시티 오브 캘리포니아 광추출 효율이 높은 발광 다이오드
TWI377703B (en) * 2007-05-02 2012-11-21 Showa Denko Kk Production method of group iii nitride semiconductor light-emitting device
WO2009117845A1 (en) * 2008-03-25 2009-10-01 Lattice Power (Jiangxi) Corporation Semiconductor light-emitting device with double-sided passivation
CN102067337A (zh) * 2008-08-19 2011-05-18 晶能光电(江西)有限公司 具有硅胶保护层的半导体发光器件
WO2012137462A1 (ja) 2011-04-08 2012-10-11 パナソニック株式会社 窒化物系半導体素子およびその製造方法
US9893239B2 (en) 2015-12-08 2018-02-13 Nichia Corporation Method of manufacturing light emitting device

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