JP2005203566A - Lamination ceramic electronic component and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a lamination ceramic electronic component wherein plating property of a underlying electrode and terminal strength are raised by preventing formation of an oxide film in the surface of the underlying electrode, and to provide the manufacturing method of the lamination ceramic electronic component which can improve productivity without increasing a cost while obtaining desired electrical property of a dielectric. <P>SOLUTION: The component has a lamination body wherein a plurality of dielectric layers, and a plurality of inner conductors are laminated alternately; and an outer conductor which comprises an underlying conductor provided to the surface of the lamination body and a metallic layer provided on the underlying conductor, and is electrically connected to the inner conductor. The metallic element of the underlying conductor comprises at least one of Ni, and Ni alloy, and the ratio of the metallic element existing in the surface of the underlying conductor specified in the following formula (1) is 50 atomic % or more and 100 atomic % or less. The formula (1) is expressed by the ratio of the metallic element (atomic %) = ämetallic amount/(metallic amount + hydroxide amount of metal + oxide amount of metal)} ×100. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a multilayer ceramic electronic component and a manufacturing method thereof, and more particularly to a multilayer ceramic capacitor and a manufacturing method thereof.

  In recent years, base metals such as Ni or Cu are often used for conductors constituting internal electrodes and external electrodes in order to reduce the cost of multilayer ceramic electronic components.

For example, Patent Document 1 discloses a monolithic ceramic capacitor, and an unfired chip body coated with a base electrode Ni paste (external electrode paste) is subjected to binder removal processing at 400 ° C. in the atmosphere. Thereafter, baking is performed at 1250 ° C. in a reducing atmosphere, followed by reoxidation treatment at 1000 ° C. in an N ₂ atmosphere to form a base electrode simultaneously with the chip body. Thereafter, Cu plating, Ni plating, and Sn plating are sequentially applied on the base electrode. It is disclosed that the Cu plating layer improves the adhesion between the base electrode, the Ni plating, and the Sn plating layer.
JP 2000-286142 A

  In the first place, when a dielectric that is a metal oxide is baked in a low oxygen atmosphere or a reducing atmosphere, a part of the dielectric is reduced. Therefore, after firing, it is necessary to perform a reoxidation process in which the dielectric is oxidized again and oxygen is replenished with oxygen.

  In Patent Document 1, a dielectric chip body and a base electrode are fired at the same time, and then a reoxidation process is performed. By this reoxidation process, an oxide film is formed on the surface of the base electrode. For this reason, it becomes impossible to apply Ni plating directly on the base electrode.

  Therefore, Ni plating and Sn plating are formed after applying Cu plating that can be formed even on an oxide film. However, in this method, since it is necessary to form Cu plating on the base of Ni plating, there is a problem that the plating process is complicated and expensive.

  Another problem is that the Ni base electrode obtained by co-firing the dielectric and the base electrode is bonded to the Cu plating via the oxide film, so that the adhesion strength is low.

  Accordingly, an object of the present invention is to provide a multilayer ceramic electronic component in which an oxide film is prevented from being formed on the surface of the base electrode, and the plating property and terminal strength of the base electrode are enhanced. It is another object of the present invention to provide a method for manufacturing a multilayer ceramic electronic component capable of improving productivity without incurring an increase in cost while obtaining desired electrical characteristics of a dielectric.

  The multilayer ceramic electronic component of the present invention includes a multilayer body in which a plurality of dielectric layers and a plurality of internal conductors are alternately stacked, a base conductor provided on the surface of the multilayer body, and a base conductor provided on the base conductor. And an outer conductor electrically connected to the inner conductor, wherein the metal component of the base conductor includes at least one of Ni and Ni alloy, and is defined by the following formula (1): The ratio of the metal component present on the surface of the underlying conductor is from 50 atomic% to 100 atomic%.

Ratio of metal component (atomic%) = {metal amount / (metal amount + metal hydroxide amount + metal oxide amount)} × 100 (1)
The metal layer preferably includes a plurality of plating layers.

  The plurality of plating layers preferably include a Ni plating layer and a Sn plating layer, wherein the Ni plating layer is provided on the base conductor, and the Sn plating layer is provided on the Ni plating layer.

  Moreover, it is preferable that the said base conductor contains a dielectric material, and this dielectric material is substantially the same as the dielectric material which comprises the said dielectric material layer.

  The method for manufacturing a multilayer ceramic electronic component of the present invention includes a plurality of dielectric layers and a plurality of internal conductors, and includes at least one metal component of Ni and Ni alloy electrically connected to the internal conductors. A step of obtaining a ceramic laminate having a base conductor formed on the surface thereof, and the ceramic in an atmosphere in which an oxygen partial pressure is higher than an equilibrium oxygen partial pressure of a metal component constituting the base conductor and an oxide of the metal component; A step of oxidizing the dielectric layer by heat-treating the laminate, and after oxidizing the dielectric layer, an oxygen partial pressure is an equilibrium oxygen content of a metal component constituting the base conductor and an oxide of the metal component Reducing the underlying conductor by heat-treating the ceramic laminate at a temperature lower than the pressure and at a temperature at which the dielectric layer is not reduced and the oxide of the metal component is reduced to a metal; The base The outer conductor is formed by providing a metal layer on the body, is characterized by comprising a step of electrically connecting the said inner conductor an outer conductor.

  The ceramic laminate including the plurality of dielectric layers and the plurality of inner conductors and having the base conductor formed on the surface is prepared as an unfired laminate including the plurality of dielectric material layers and the inner conductor material layer. It is preferable to obtain the substrate by firing after providing a base conductor material layer connected to the inner conductor material layer on the surface of the laminate.

  Further, the step of oxidizing the dielectric layer and the step of reducing the base conductor may be continuously performed in one furnace.

  Further, the step of oxidizing the dielectric layer may be performed in a first furnace, and the step of reducing the base conductor may be performed in a second furnace having a cooling rate higher than that of the first furnace.

  In the multilayer ceramic electronic component of the present invention, the proportion of at least one metal component of Ni and Ni alloy existing on the surface of the underlying conductor is 50 atomic% or more and 100 atomic% or less. Since the proportion of hydroxide is limited to less than 50 atomic%, the adhesion strength between the underlying conductor and the metal layer is improved.

  Therefore, when the Ni plating layer is directly formed on the underlying conductor containing at least one metal component among Ni and Ni alloy without interposing the Cu plating layer, the adhesion strength between the underlying conductor and the Ni plating layer is improved. In addition, the cost can be reduced.

  Further, in the method for manufacturing a multilayer ceramic electronic component of the present invention, after oxidizing the dielectric layer, an atmosphere in which the oxygen partial pressure is lower than the equilibrium oxygen partial pressure of the metal component constituting the underlying conductor and the oxide of the metal component And the dielectric layer is not reduced and the oxide of the metal component is reduced to the metal, the ceramic laminate is heat-treated to reduce the underlying conductor. Formation of an oxide film can be prevented, and the plating property of the base conductor and the adhesion strength of the plating layer can be improved.

  When the step of oxidizing the dielectric layer and the step of reducing the underlying conductor are continuously performed in one furnace, no new equipment is required to prevent the formation of the metal oxide film of the underlying conductor, and the cost is reduced. A multilayer ceramic electronic component can be manufactured without causing an increase.

  In addition, when the step of oxidizing the dielectric layer is performed in the first furnace and the step of reducing the underlying conductor is performed separately in the second furnace having a cooling rate faster than that of the first furnace, the process related to the reduction step Time can be shortened and productivity can be improved.

  A configuration of the multilayer ceramic capacitor 1 according to the first embodiment and a manufacturing method thereof will be described with reference to FIG.

  The multilayer ceramic capacitor 1 includes a ceramic multilayer body 2 having a dielectric layer 2a and an inner conductor 3, and an outer conductor 10 having a base conductor 4 and plating layers 5 and 6 as metal layers.

  In the ceramic laminate 2, a plurality of internal conductors 3 are provided between a plurality of dielectric layers 2a, and the dielectric layers 2a and the internal conductors 3 are alternately laminated. The end 3 a of the inner conductor 3 is formed so as to be exposed at any end face of the ceramic laminate 2.

  The underlying conductor 4 is provided on the outer surface of the ceramic laminate 2 and is electrically connected to the end 3 a of the internal conductor 3 exposed at the end face of the ceramic laminate 2. The base conductor 4 includes Ni and / or Ni alloy which are metal components, and a dielectric material having the same main component as the dielectric layer 2 a of the ceramic laminate 2.

  A metal layer is further formed on the underlying conductor 4. In the present embodiment, the Ni plating layer 5 is provided on the base conductor 4, and the Sn plating layer 6 is further provided on the Ni plating layer 5 to constitute the external conductor 10. Therefore, the inner conductor 3 is electrically connected to the outer conductor 10 including the base conductor 4 and the Ni plating layer 5 and the Sn plating layer 6.

  Next, a method for manufacturing such a multilayer ceramic capacitor 1 will be described below.

  First, an electrode paste as a plurality of internal conductor material layers mainly composed of Ni was printed on a plurality of ceramic green sheets as dielectric material layers mainly composed of barium titanate (average particle size 0.3 μm). . Next, a plurality of ceramic green sheets on which the internal electrode material layer was formed were laminated and cut to obtain an unfired chip-like laminate. Thereafter, the inner conductor material layer was exposed on the end face of the unfired laminated body by performing barrel treatment for polishing the surface of the laminated body. The size of this laminate was 4.0 mm × 2.2 mm × 2.2 mm.

  Next, the base conductor material is prepared by adding and kneading varnish and barium titanate having the same main component as the above-mentioned ceramic green sheet (average particle size: 0.3 μm) to Ni powder having an average particle size of 1 μm. A base conductor paste for the layer was obtained.

  The common base material is preferably composed of a dielectric material having substantially the same main component as the ceramic green sheet. This is because the ceramic green sheet and the underlying conductor paste are fired simultaneously as will be described later, so that the ceramic green sheet does not crack due to the difference in the sintering shrinkage ratio between the ceramic green sheet and the underlying conductor paste. This is to match the sintering shrinkage. Moreover, it is for ensuring the adhesive strength by simultaneous baking with the laminated body which consists of a base conductor and a ceramic green sheet.

  Next, this base conductor paste was applied to the end face where the inner conductor material layer of the unfired multilayer body was exposed to obtain a raw multilayer body provided with the base conductor material layer.

  Next, this laminate was heat-treated in the atmosphere at 230 ° C. for 5 hours to remove the binder from the laminate.

  Next, the laminate after debinding was fired under the conditions (firing profile) shown in Table 1. In the firing profile, the ceramic green sheet, the inner conductor material layer, and the underlying conductor material layer were simultaneously fired and sintered in a reducing atmosphere in which hydrogen and nitrogen were introduced in a temperature interval maintaining 1250 ° C. As a result, a ceramic laminate 2 including a plurality of dielectric layers 2a and a plurality of internal conductors 3 and having a base conductor 4 containing Ni formed on the surface of the ceramic laminate 2 was obtained.

  In the obtained ceramic laminate, since the dielectric layer is fired in a reducing atmosphere as described above, oxygen is deprived from the dielectric and oxygen vacancies are generated. Therefore, after sintering, the dielectric layer 2a was oxidized by stopping the introduction of hydrogen in the temperature lowering section from 1000 ° C. to 600 ° C. By this oxidation treatment, oxygen can be replenished to the oxygen vacancies and deterioration of insulation resistance characteristics of the dielectric can be suppressed. At this time, the furnace atmosphere was set to an oxygen partial pressure capable of replenishing oxygen in the oxygen vacancies of the dielectric. The oxygen partial pressure may be any oxygen partial pressure higher than the equilibrium oxygen partial pressure between the dielectric (metal oxide) and its reduction product. More preferably, the dielectric layer 2a is oxidized with an oxygen partial pressure higher than the equilibrium oxygen partial pressure of Ni and Ni oxide contained in the underlying conductor 4. This is because the oxygen partial pressure can accelerate the oxidation reaction rate of the dielectric.

  In the above oxidation treatment, the dielectric is oxidized, and at the same time, the underlying conductor 4 containing Ni is formed on the surface of the ceramic laminate 2, so that the underlying conductor 4 is also exposed to the oxidation treatment. That is, a Ni oxide film and a Ni hydroxide film that is a modified product thereof are formed on the surface of the underlying conductor 4.

  Therefore, after the oxidation treatment (after cooling to 600 ° C. in the temperature section), the charging of hydrogen was resumed, and the oxygen partial pressure in the furnace was made lower than the equilibrium oxygen partial pressure of Ni and Ni oxide (for example, NiO). . While maintaining this temperature for 60 minutes and further cooling to 200 ° C., the underconductor oxygen 4 was reduced by maintaining the state in which the oxygen partial pressure in the furnace was lower than the equilibrium oxygen partial pressure. By this reduction treatment, the ratio of the Ni oxide film existing on the surface of the underlying conductor 4 and the Ni hydroxide film which is a modified product thereof can be reduced, or the Ni oxide film and the Ni hydroxide film can be removed.

  In the temperature range of 200 ° C. to 20 ° C., the equilibrium state of Ni is NiO. However, since the ambient temperature is low and the processing time is short, oxidation of the reduced underlying conductor 4 does not proceed.

  After the reduction treatment, the Ni plating layer 5 and the Sn plating layer 6 were provided in this order on the underlying conductor 4 of the ceramic laminate 2, and the external conductor 10 was formed. Thereby, the multilayer ceramic capacitor 1 in which the inner conductor 3 and the outer conductor 10 were electrically connected was obtained.

  In Example 1, the step of oxidizing the dielectric layer and the step of reducing the underlying conductor were performed continuously in one box-type firing furnace (batch furnace). In this case, since no new equipment is required, the multilayer ceramic capacitor can be manufactured without any additional cost.

(Characteristic evaluation of multilayer ceramic capacitors)
Table 2 shows samples obtained by variously changing the reduction start temperature, the oxygen partial pressure, and the keep time in the above manufacturing method. Table 2 also shows the measurement results of the ratio of the metal (Ni) component on the surface of the underlying conductor, the plating coverage, the terminal strength, and the insulation resistance (IR). In Table 2, the sample numbers marked with * are outside the scope of the present invention, and the others are within the scope of the present invention.

  The measurement of the metal (Ni) component was performed in a state where the base conductor 4 was formed on the ceramic laminate 2 for the sample before the plating layer was formed. The amounts of Ni, Ni hydroxide and Ni oxide on the surface of the underlying conductor 4 were quantitatively analyzed by X-ray photoelectron spectroscopy, and the ratio of Ni metal component was calculated from the formula (1).

Ratio of metal (Ni) component (atomic%) = {Ni metal amount / (Ni metal amount + Ni hydroxide amount + Ni oxide amount)} × 100 (1)
The plating coverage was measured on a sample in which the Ni plating layer 5 was formed on the base conductor 4. The coverage of the Ni plating layer 5 on the underlying conductor 4 was calculated by observing the surface of the Ni plating layer with a microscope.

  The terminal strength of the outer conductor was measured in a state in which the Ni conductor 5 and the Sn plating layer 6 were provided on the base conductor 4 and the outer conductor 10 was completed. A lead wire was soldered to the outer conductor 10 of the multilayer ceramic capacitor 1 to prepare a sample for a terminal strength test. The terminal strength was measured by using a strength tester and pulling both ends of the lead wire in opposite directions under the condition of 20 mm / min to obtain the strength when the underlying conductor or the plating layer was peeled off.

  The insulation resistance was performed in a state where the outer conductor 10 was formed in the same manner as the measurement of the terminal strength. The sample was put into a thermostatic chamber and then heated to 150 ° C., and an insulation resistance meter was used to measure the resistance value after applying a DC 20 V voltage to the sample for 60 seconds.

  (Comparative Example) In the same manner as in Example 1, first, a raw laminate having an underlying conductor material layer provided on the end face where the inner conductor material layer of the unfired laminate was exposed was obtained.

  Next, the binder was removed from the laminate in the same manner as in Example 1, and then fired under the conditions (firing profile) shown in Table 3 to obtain a ceramic laminate. In the comparative example, no reduction treatment is performed during cooling.

  Then, in the same manner as in Example 1, a Ni plated layer and an Sn plated layer were formed in this order on the surface of the obtained ceramic laminate to obtain a multilayer ceramic capacitor.

  Next, the obtained multilayer ceramic capacitor was evaluated in the same manner as in Example 1. The results are shown in Table 2.

  First, looking at the ratio of the metal (Ni) component on the surface of the underlying conductor, in the comparative example, the atmosphere during the oxidation treatment is an oxygen partial pressure higher than the equilibrium oxygen partial pressure, and it is reduced in the temperature lowering section of 600 ° C. or lower after firing. Since no treatment was performed, it was confirmed that a Ni oxide film was formed on the surface of the underlying conductor. In this case, the proportion of the metal (Ni) component was 0% (Sample No. 9). In contrast, in the present invention, as shown in sample numbers 1 to 3 and 5 to 7, by starting the reduction at a temperature of 500 ° C. to 700 ° C., the metal (Ni) component present on the surface of the underlying conductor is reduced. The ratio could be increased to 50% or more.

  Next, regarding the plating coverage and terminal strength, in the comparative example, when the Ni plating layer is formed directly on the underlying conductor, only an insufficient Ni plating coverage can be obtained. In the present invention, as shown in Sample Nos. 1 to 3 and 5 to 7, the ratio of the metal (Ni) component on the surface of the underlying conductor could be increased, so that the plating coverage was 90% or more and the terminal strength However, a high strength of about 12N to 15.5N was obtained. Therefore, it was found that the adhesion strength between the base conductor and the Ni plating layer was improved. Therefore, in the present invention, the Ni plating layer 5 can be directly formed on the underlying conductor without forming Cu plating on the underlying conductor as in the prior art.

  When the reduction start temperature was set to 600 ° C. and the ratio of the metal (Ni) component was changed by changing the oxygen partial pressure in the furnace, when the ratio of the metal (Ni) component was less than 50%, the plating coverage and terminal The strength was greatly reduced (Sample No. 4). When the ratio of the metal (Ni) component is less than 50 atomic%, the plating coverage and terminal strength are undesirably lowered. Therefore, the metal (Ni) component is 50 atomic% or more and 100 atomic% or less.

  When the reduction start temperature is set to 700 ° C. and held for 60 minutes, it can be said that the insulation resistance is slightly lowered and the dielectric is baked in a low oxygen atmosphere (Sample No. 5). However, the decrease in insulation resistance is within a practically allowable range.

  In addition, the kind of gas input in order to make the inside of a furnace into the atmosphere of low oxygen concentration (atmosphere when reducing a base conductor) is not limited to a present Example. Any gas can be used as long as it is set to an oxygen partial pressure lower than the equilibrium oxygen partial pressure of the metal component forming the underlying conductor and the oxide of the metal component by the gas introduced into the furnace.

  Further, the atmospheric pressure for performing the oxidation or reduction treatment is not limited to this embodiment. Pressurized atmosphere at a pressure higher than atmospheric pressure, provided that the oxygen vacancies in the dielectric can be replenished with oxygen, or the metal component oxide can be reduced to metal. Alternatively, the treatment can be performed in a reduced-pressure atmosphere at a pressure lower than atmospheric pressure.

  As described above, the present invention does not require an additional new process or equipment, prevents the formation of a metal oxide film on the surface of the underlying conductor without adversely affecting the electrical characteristics of the dielectric, This is an extremely useful method capable of improving the plating property, adhesion strength and terminal strength.

  Next, a method for manufacturing a multilayer ceramic capacitor according to Example 2 will be described.

  An unfired laminated body coated with the base conductor paste, produced in the same manner as in Example 1, was fired using the box furnace as the first furnace under the conditions shown in Table 3. Then, the reduction process was performed on the temperature conditions shown in Table 4 using the tunnel-type baking furnace which is a 2nd furnace whose cooling rate is faster than a box-type baking furnace.

  A Ni plating layer and an Sn plating layer were formed in this order on the surface of the underlying conductor of the ceramic laminate obtained after the reduction to obtain a multilayer ceramic capacitor (Sample No. 8). The characteristics were evaluated in the same manner as in Example 1. The results are shown in Table 2. It can be seen that the multilayer ceramic capacitor of Example 2 can achieve the same effect as that of Example 1.

  When the unfired laminate and the underlying conductor are fired at the same time, and oxidation treatment and reduction treatment are performed collectively in a large box-type firing furnace with a slow cooling rate, additional cooling can be performed in a reducing atmosphere. Although there is no cost for equipment, a long time is required for the reduction treatment. As in this example, a furnace for simultaneously firing the dielectric and the underlying conductor and a furnace for removing the metal oxide film of the underlying conductor are separately provided, and the reduction treatment is performed using a furnace with a high cooling rate. By implementing it, productivity can be improved.

  The large box-type firing furnace has a structure in which the stacked laminate does not move in the furnace like a tunnel furnace, and heat is confined in the furnace, so the heat capacity of the firing furnace is large, The followability of the furnace temperature to the set temperature is not good. Therefore, this structure is not suitable for rapidly cooling the temperature in the furnace after firing. Therefore, in a large box-type baking furnace, an oxidation process is performed, and the laminated body is taken out in the middle of cooling and put into a tunnel furnace. A tunnel furnace has a structure having a plurality of temperature sections with a temperature gradient so that the temperature in the furnace is lowered, and the stacked body is placed on a transfer device, and the stacked body is moved from a section having a high set temperature to a low section by the transfer device. Therefore, the cooling rate of the furnace temperature can be increased. Therefore, the time required for the reduction process can be shortened.

  In addition, in the said Example, although the laminated body which consists of a base conductor and a ceramic green sheet was baked simultaneously, a baking process is not limited to this. For example, a laminated body of ceramic green sheets may be fired, and then a base conductor may be baked on the sintered laminated body, and a plating layer may be provided as an external conductor. Even when the base conductor is retrofitted to the sintered laminate, the metal oxide film and metal hydroxide film generated on the base conductor by the above-described reduction treatment can be removed.

  Moreover, although the case where a metal layer was a Ni plating layer and a Sn plating layer was shown, it is not limited to this. In the case of a Cu plating layer other than the Ni plating layer, the same effect can be obtained.

  In this embodiment, the metal layer is a plurality of plating layers. However, the present invention is not limited to this, and it is sufficient that at least one plating layer is formed.

1 is a cross-sectional view showing a multilayer ceramic capacitor according to a first embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Multilayer ceramic capacitor 2 Ceramic multilayer body 3 Inner conductor 4 Base conductor 5 Ni plating layer 6 Sn plating layer 10 Outer conductor

Claims (8)

A laminate in which a plurality of dielectric layers and a plurality of internal conductors are alternately laminated;
An outer conductor electrically connected to the inner conductor, including a base conductor provided on the surface of the multilayer body and a metal layer provided on the base conductor;
The metal component of the base conductor includes at least one of Ni and Ni alloy,
A multilayer ceramic electronic component, wherein a ratio of the metal component present on the surface of the base conductor defined by the following formula (1) is 50 atomic% or more and 100 atomic% or less.
Ratio of metal component (atomic%) = {metal amount / (metal amount + metal hydroxide amount + metal oxide amount)} × 100 (1)   The multilayer ceramic electronic component according to claim 1, wherein the metal layer includes a plurality of plating layers.   The plurality of plating layers include a Ni plating layer and a Sn plating layer, the Ni plating layer is provided on the base conductor, and the Sn plating layer is provided on the Ni plating layer. Multilayer ceramic electronic components.   The multilayer ceramic electronic component according to claim 1, wherein the base conductor includes a dielectric material, and the dielectric material is substantially the same as the dielectric material constituting the dielectric layer. A ceramic laminate including a plurality of dielectric layers and a plurality of internal conductors and having a base conductor containing at least one metal component of Ni and Ni alloy formed on the surface and electrically connected to the internal conductors is obtained. Process,
A step of oxidizing the dielectric layer by heat-treating the ceramic laminate in an atmosphere in which an oxygen partial pressure is higher than an equilibrium oxygen partial pressure of a metal component constituting the base conductor and an oxide of the metal component;
After oxidizing the dielectric layer, the dielectric layer is reduced in an atmosphere where the oxygen partial pressure is lower than the equilibrium oxygen partial pressure of the metal component constituting the base conductor and the oxide of the metal component. Without reducing the underlying conductor by heat treating the ceramic laminate at a temperature at which the oxide of the metal component is reduced to metal,
Forming an outer conductor by providing a metal layer on the underlying conductor, and electrically connecting the inner conductor and the outer conductor;
A method for producing a multilayer ceramic electronic component comprising: The ceramic laminate including the plurality of dielectric layers and the plurality of inner conductors and having a base conductor formed on a surface thereof,
By preparing an unfired laminate including a plurality of dielectric material layers and an internal conductor material layer, and providing a base conductor material layer connected to the internal conductor material layer on the surface of the laminate, followed by firing. The manufacturing method of the multilayer ceramic electronic component of Claim 5 obtained.   The method for manufacturing a multilayer ceramic electronic component according to claim 5, wherein the step of oxidizing the dielectric layer and the step of reducing the base conductor are continuously performed in one furnace.   The step of oxidizing the dielectric layer is performed in a first furnace, and the step of reducing the base conductor is performed in a second furnace having a cooling rate higher than that of the first furnace. Manufacturing method of multilayer ceramic electronic component.

Images