JP2005194611A - Method of producing film pattern, method of producing electrically conductive layer, method of producing electronic device, and electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of producing a film pattern high in precision and high in throughput, and to provide a method of producing an electronic device inexpensively and with low resources without causing environmental load. <P>SOLUTION: The method of producing a film pattern comprises: a stage wherein a monomolecular film is formed on a substrate; a stage wherein a mask is arranged or a liquid is arranged so as to be contacted with at least a part of the monomolecular film; and a stage wherein ozone is fed to the monomolecular film which is not contacted with the mask or liquid, or ultraviolet rays are applied thereto in the presence of oxygen. The method of producing an electronic device uses the method of producing a monomolecular film pattern. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for producing a high-definition and high-throughput film pattern, a method for producing a conductive layer using the method, a method for producing an electronic device, and an electronic device.

  An electronic device is generally manufactured through repeated processes such as formation of a thin film on the entire surface of a substrate and photoetching. This thin film is usually several tens to several hundreds of nanometers in thickness, but as a result, most of the material is removed by etching, and thus has a serious problem in terms of environmental load and cost.

  On the other hand, by forming a monomolecular film on the substrate and patterning it on the substrate, it is overwhelming by showing conductivity of several nanometers in length, liquid repellency, and biosensor function. Technologies for manufacturing devices with low resources and low costs are being developed.

  For example, in the case of a conductive monomolecular film, a circuit can be formed by performing patterning as it is. In addition, if the lyophilic / liquid repellent area can be formed on the substrate by patterning the liquid repellent film, the accuracy in patterning the functional material into the lyophilic area by a liquid phase process such as the inkjet method will be markedly increased. Can be raised.

  Patterning of this monomolecular film (for example, self assembled monolayers: SAM, etc.) is generally performed after forming SAM on the entire surface of the substrate and then patterning energy rays such as ultraviolet rays and electron beams. Formed by irradiation. However, decomposition by ultraviolet rays or electron beams is not practical because it takes too much time and cost.

  In JP 2002-23367 A, an organic molecular film having a film thickness of 3 nm or less is formed on the substrate surface, and then the organic molecular film is irradiated with ultraviolet light while supplying ozone to the vicinity of the substrate surface. A method of manufacturing an organic molecular film pattern that removes a part of the film has been proposed (Patent Document 1). The publication discloses a method of efficiently patterning by supplying ozone between the mask and the substrate. However, in this method, since ozone is in contact with the entire surface of the substrate, decomposition of the SAM of the entire substrate is promoted, and a high-contrast pattern cannot be obtained.

Japanese Patent Application Laid-Open No. 2000-249821 discloses a substrate for a pattern forming body having a photocatalyst-containing layer side substrate having at least a photocatalyst-containing layer, and a characteristic changing layer having a characteristic change layer due to the action of the photocatalyst in the photocatalyst-containing layer. Is disposed so that the photocatalyst-containing layer and the property change layer are in contact with each other, and then exposed to change the property of the property change layer of the exposed portion, and then the photocatalyst-containing layer side substrate is removed, thereby providing the characteristics. There has been proposed a method of manufacturing a pattern forming body that obtains a pattern forming body having a pattern with changed characteristics on the change layer (Patent Document 2). This production method described in the publication is a method for efficiently decomposing SAM by the effect of the photocatalyst. However, light and ozone are diffused by the photocatalyst layer, a fine pattern cannot be formed, and productivity is not good.
JP 2002-23367 A JP 2000-249821 A

  Therefore, an object of the present invention is to provide a film pattern manufacturing method with high definition and high throughput.

  Another object of the present invention is to provide a method of manufacturing an electronic device with no environmental load, low resources, and low cost.

  As a result of intensive research, the present inventor can achieve the above object by a SAM patterning process in which the surface of the monomolecular film spatially contacts and does not contact ozone, and ozone contacts the SAM in a pattern. I got that knowledge.

  This invention is made | formed based on the said knowledge, and provides the manufacturing method of the following film pattern, the manufacturing method of a conductive layer, the manufacturing method of an electronic device, and an electronic device, respectively.

  1. A step of forming a monomolecular film on a substrate, a step of arranging a mask so as to be in contact with at least a part of the monomolecular film, and supplying ozone to the monomolecular film that is not in contact with the mask, or Irradiating ultraviolet rays in the presence of oxygen.

  2. A step of forming a monomolecular film on a substrate, a step of disposing a liquid on the monomolecular film, and supplying ozone to the monomolecular film that is not in contact with the liquid, or ultraviolet rays in the presence of oxygen. And a step of irradiating the film pattern.

  3. 2. The film pattern forming method according to 2, wherein the step of arranging the liquid is performed using an inkjet method.

  4). 4. The method for producing a film pattern according to any one of 1 to 3, wherein in the step of supplying ozone, the ozone is supplied and ultraviolet rays are irradiated.

  5). Forming a monomolecular film on a substrate, placing a mask in contact with at least a part of the monomolecular film in the presence of oxygen, irradiating the monomolecular film with ultraviolet rays, The mask has a depression on the lower surface of the mask, and the step of arranging the mask arranges the lower surface of the mask so as to contact the monomolecular film.

  6). 6. The method for producing a film pattern according to any one of 1 to 5, wherein the substrate has ultraviolet transparency.

  7). A step of forming a monomolecular film on a substrate, a step of arranging a mask so as to be in contact with at least a part of the monomolecular film, and supplying ozone to the monomolecular film that is not in contact with the mask, or Irradiating ultraviolet rays in the presence of oxygen, removing the monomolecular film that is not in contact with the mask, and forming a conductive layer on the substrate from which the monomolecular film has been removed. The manufacturing method of a conductive layer.

  8). A step of forming a monomolecular film on a substrate, a step of disposing a liquid on the monomolecular film, and supplying ozone to the monomolecular film that is not in contact with the liquid, or ultraviolet rays in the presence of oxygen. And removing the monomolecular film that is not in contact with the liquid, and forming a conductive layer on the substrate from which the monomolecular film has been removed.

  9. A step of forming a monomolecular film on a substrate; a step of arranging a mask so as to contact at least part of the monomolecular film in the presence of oxygen; and irradiating the monomolecular film with ultraviolet rays, Removing the monomolecular film that is not in contact with the substrate, and forming a conductive layer on the substrate from which the monomolecular film has been removed. The mask has a depression on the lower surface of the mask. And the process of arrange | positioning the said mask is a manufacturing method of the conductive layer arrange | positioned so that the lower surface of the said mask may contact the said monomolecular film.

  10. The method for producing a conductive layer according to any one of 7 to 9, wherein the step of forming the conductive layer includes a step of performing a plating process.

  11. In any one of said 7-9, the process of forming the said conductive layer is a manufacturing method of a conductive layer including the process of apply | coating the solution containing the material of this conductive layer.

  12 11. The method for producing a conductive layer according to 11, wherein the step of applying the solution is performed by an inkjet method.

  13. The manufacturing method of the electronic device which uses the manufacturing method of the film | membrane pattern in any one of said 1-6, or the manufacturing method of the conductive layer in any one of said 7-12.

  14 14. An electronic device manufactured by the method for manufacturing an electronic device according to 13.

(Manufacturing method of monomolecular film pattern)
Hereinafter, the manufacturing method of the monomolecular film pattern of this invention is demonstrated based on the preferable embodiment.

  The method for producing a monomolecular film pattern according to the present invention includes a film forming step of forming a monomolecular film on a substrate, and whether ozone is provided by providing a space portion and a non-space portion on the surface of the monomolecular film. Or an ozone application step of providing ultraviolet rays in the presence of oxygen.

  Since the present invention has such a configuration, it is possible to form a film pattern with high definition and high throughput. In addition, this manufacturing method enables SAM patterning to be performed at a much lower cost and higher productivity than before.

  Examples of the base material for forming the monomolecular film in the film forming process according to the present invention include Si (silicon) wafer, quartz, quartz glass, glass, plastic film, and metal substrate. As the shape of the substrate, various types such as a plate-like substrate and a curved body having a curved surface such as a sphere can be used.

  Examples of the monomolecular film include all monomolecular films such as an organic molecular film formed on a substrate. Particularly, an organic compound ultra-thin film, particularly self assembled monolayers (SAM) is the next point. Is preferable. That is, the self-assembled monomolecular film is a film formed by orienting molecules having a binding functional group capable of reacting with atoms constituting an underlayer such as a substrate. Unlike the resin film such as a photoresist material, the self-assembled film is formed by orienting single molecules, so that the film thickness can be extremely reduced and an extremely uniform film can be obtained. Thereby, surface characteristics, such as outstanding liquid repellency, lyophilicity, electroconductivity, magnetism, and a DNA sensor function, can be used as an imparting substrate.

  The film thickness of this monomolecular film is determined by the length of the molecular chain, but is usually about 1 nm or less and at most about 5 nm, which is an order completely different from that of a resist film conventionally used in photolithography.

  SAMs suitable as monomolecular films include conductive SAMs, magnetic SAMs, high dielectric SAMs, lyophilic SAMs, liquid repellent SAMs, etching resist SAMs, and SAMs used for DNA sensors. Can be applied to any SAM formed on a substrate such as a substrate.

  As a compound for forming a monomolecular film, a trimethylsilyl (TMS) monomolecular film can be used using hexamethyldisilazane (HMDS). In addition, as this monomolecular film, self-assembled monolayers of alkoxysilane compounds such as octadecyltriethoxysilane and heptadecafluoro-1,1,2,2-tetrahydrodecyltriethoxysilane, and thiol compounds such as hexadecanethiol. A molecular film or the like can also be used. Furthermore, it goes without saying that such a patterning technique is also effective for monomolecular films other than those shown here. In use, it is preferable to use one compound alone, but the use of a combination of two or more compounds is not limited as long as the effect of the present invention is not impaired.

  In the ozone application step (Embodiment 1) according to one embodiment of the present invention, ozone is provided by providing a space portion and a non-space portion on the surface of the monomolecular film formed in the film formation step. By providing the space portion, when ozone is supplied, the surface of the monomolecular film corresponding to the space portion comes into contact with ozone, and the monomolecular film in this portion is decomposed by the ozone. On the other hand, by providing the non-space part, when ozone is supplied, the surface of the monomolecular film corresponding to the non-space part does not come into contact with ozone, and the monomolecular film in this part is not decomposed by the ozone. After the ozone supply, the original monomolecular film remains. Thus, by providing a non-space portion in a desired pattern shape and supplying ozone, it is possible to form a monomolecular film pattern corresponding to the shape. In order to supply ozone, for example, an ozone generator or the like can be used.

  The ozone application process in Embodiment 1 includes means for bringing the mask into contact with the surface of the monomolecular film using a mask having holes and / or depressions so that the holes and / or depressions form spaces. . At this time, a non-space part is formed by the part without the hole of the mask. As a mask having holes, the mask (mask with holes) shown in FIG. 1 is exemplified. Moreover, as a mask which has a hollow, the mask (mask partially dented) shown in FIG. 2 is illustrated. As shown in FIGS. 1 and 2, the mask 3 having the holes 5 or the depressions 6 has a portion where the monomolecular film 2 (SAM or the like) formed on the substrate 1 is to be removed, that is, a portion which is in contact with the supplied ozone. The position is set so as to correspond to the hole 5 or the depression 6 of the mask, and the mask is placed on the surface of the monomolecular film 2 and brought into contact therewith.

  In particular, the mask 3 having the recess 6 shown in FIG. 2 can be used when a hole 5 (hole) cannot be completely formed between the front and back of the mask (is not possible to make an island pattern or the like). . As shown in FIG. 2, the mask 3 having such depressions 6 is such that the mask surface and the back surface are not completely connected, for example, a quartz plate provided with grooves such as lines and pitches in a straight line or a circuit pattern. Is mentioned.

  In addition, in the ozone application process in the first embodiment, instead of using the mask as described above, the inkjet droplets are ejected onto the surface of the monomolecular film so that the droplets form non-space portions by an inkjet method. Means for making it possible can also be included. In this case, since an arbitrary space / non-space pattern can be formed based on digital data, it is not necessary to create a mask and patterning can be performed at a lower cost. For example, as shown in FIG. 3, a portion of the SAM or the like where the monomolecular film 2 is not desired to be removed (a portion that is desired to remain as a monomolecular film pattern), that is, a portion that is not in contact with the supplied ozone corresponds to the droplet 4. Thus, the inkjet droplet 4 can be ejected onto the surface of the monomolecular film 2 to cover the surface. After the patterning by the ink jet, the monomolecular film 2 can be selectively removed only at a portion where the liquid droplet 4 (ink) is not in contact by supplying ozone and then removing the ink jet liquid droplet. it can.

  A substrate on which a monomolecular film such as SAM is formed on the entire surface has a high surface tension. Such a substrate can be finely patterned to about 10 microns by an inkjet method. Any droplet (ink) that can be used in the means using the inkjet droplet is any material that does not change in nature and does not spontaneously evaporate in the next process (ozone donation such as exposure to ozone, ultraviolet irradiation). For example, ionic liquids, high boiling point liquids, photoresists, metal fine particles and metal oxide fine particles can be used. Any of these can be finally removed after patterning a monomolecular film such as SAM. Select what is easy to do.

  Further, instead of such a method using ink jet droplets, a method using pattern application by a dispenser can also be applied in the manufacturing method of the present invention.

  A specific example of the ozone application process according to Embodiment 1 is shown in FIG. As shown in FIG. 4, the mask 3 or the ink jet droplet 4 having the holes 5 is completely brought into close contact with the surface of the monomolecular film 2 (SAM or the like) formed on the substrate 1 in the above-described film forming process, and thereafter Then, the substrate 1 in this state is placed in a chamber 7 that is made into an ozone atmosphere by supplying ozone gas from the outside. In this way, ozone penetrates only in the portion where the hole 5 is formed when the mask 3 is used, and only in the portion where the droplet 4 is not in contact when the ink jet droplet 4 is used. Patterning can be performed to decompose the film 2. Thereby, the monomolecular film pattern 10 can be formed on the substrate 1.

  Further, in the ozone application step according to the first embodiment, after providing the space portion and the non-space portion by the mask 3 having the holes 5 and the ink jet droplets 4 as described above, the space portion before or after the ozone supply. It is preferable that the surface of the monomolecular film 2 corresponding to the above includes an ultraviolet irradiation step of irradiating ultraviolet rays, because the decomposition effect of the monomolecular film 2 by ozone can be further promoted. Specifically, it can be performed by irradiating ultraviolet rays from an ultraviolet light source in the chamber 7 shown in FIG.

  Further, in the ozone application process according to the first embodiment, as shown in FIG. 6, a large number of substrates 1 on which the monomolecular film 2 is formed using a plurality of masks 3 are collectively put in a chamber 7 and processed ( Batch processing) can also be performed. Thereby, the monomolecular film pattern 10 formed on the substrate 1 can be manufactured in large quantities.

  In the case of performing batch processing using a plurality of substrates 1 as shown in FIG. 6, when performing the above-described ultraviolet irradiation step, the substrate 1 having ultraviolet transparency is used, and the other substrate 1 has the ultraviolet transparency. The monomolecular film 2 can be effectively decomposed by making it possible to use the ultraviolet rays transmitted from. Similarly, when the mask 3 is used, if a mask having ultraviolet transparency is used as the mask 3, the decomposition of the monomolecular film 2 can be promoted by using ultraviolet rays that pass through the mask 3. That is, as shown in FIG. 6, it is desirable that the mask 3 and the substrate 1 be made of a material that does not absorb ultraviolet rays, such as quartz, so that all the substrates 1 can be exposed simultaneously with one light source. . Moreover, when irradiating with ultraviolet rays, the ultraviolet light can be used more efficiently by providing an ultraviolet reflecting layer in the chamber 7.

  Since the mask 3 is used to separate whether ozone contacts or does not contact the substrate 1, ultraviolet rays are included in the process when a solid mask is used as shown in FIGS. 1 and 2. If not, the material of the substrate 1 is arbitrary.

  In the present invention, the wavelength of ultraviolet rays is preferably 150 to 380 nm. Examples of light sources for ultraviolet light in this wavelength range include mercury lamps, metal halide lamps, excimer light sources of 222 nm and 308 nm, KrF excimer light sources, and second harmonics of NdYAG lasers. By using these light sources, it becomes possible to pattern a monomolecular film.

  More preferably, it is 200-250 nm. If the wavelength is shorter than 200 nm, there is a possibility that the portion of the SAM where the pattern is to be left is damaged by the energy of the ultraviolet rays. If the wavelength is 250 nm or more, ozone is not efficiently generated, which is necessary for the process. Because time increases. Therefore, a high-contrast pattern can be created in a shorter time by using ultraviolet rays having a wavelength of 200 to 250 nm.

  In the ozone application step (Embodiment 2) according to another embodiment of the present invention, a space portion and a non-space portion are provided on the surface of the monomolecular film formed in the film formation step to provide ultraviolet rays in the presence of oxygen. To do. The ozone generated thereby is brought into contact with the monomolecular film. The oxygen concentration at this time can be adjusted between 0.01 and 100%. In general, it is preferable to carry out in the atmosphere from the viewpoint of simplifying the process.

  By providing the space portion in this manner, when the ultraviolet ray is provided, oxygen existing in the space portion becomes ozone by the ultraviolet ray, and the surface of the monomolecular film corresponding to the space portion comes into contact with this ozone, and this portion The monomolecular film is decomposed by the ozone. On the other hand, by providing a non-space part, oxygen cannot exist and ozone is not generated even if ultraviolet rays are provided. For this reason, the surface of the monomolecular film corresponding to the non-space portion does not come into contact with ozone, and the monomolecular film in this portion is not decomposed by the ozone and remains as the original monomolecular film after the provision of ultraviolet rays. . Accordingly, it is possible to form a monomolecular film pattern corresponding to the shape by providing a non-space portion in a desired pattern shape and supplying ultraviolet rays in the presence of oxygen. The second embodiment is a technique that utilizes the fact that the decomposability of a monomolecular film with respect to ultraviolet rays is extremely lowered unless ozone is in contact with the monomolecular film.

  The ozone application process according to Embodiment 2 includes means for contacting the mask with the surface of the monomolecular film using a mask having ultraviolet transparency and having a recess so that the recess forms a space. Can do. As a specific example, it is useful to use a mask 3 having ultraviolet transparency and having a recess 6 as shown in FIG. As shown in FIG. 2, the mask 3 having the depression 6 has a portion where the monomolecular film 2 such as SAM is to be removed, that is, a portion which comes into contact with ozone generated by supplying ultraviolet rays in the presence of oxygen. The position is set so as to correspond to the dent 6 and the surface is brought into contact with the surface of the monomolecular film 2 on the substrate 1.

  In this case, as shown in FIG. 5, when a mask 3 having a depression 6 is brought into close contact with the surface of the monomolecular film 2 on the substrate 1 in a chamber 7 in an atmosphere in air (including oxygen), a pattern shape is obtained. There is a cavity. Since oxygen exists in the cavity, when the entire surface is irradiated with ultraviolet rays from the ultraviolet light source through the mask 3, the ultraviolet rays react with oxygen to generate ozone, and the monomolecular film 2 is removed in a pattern by the ozone. Can do. In this way, the monomolecular film pattern 10 is formed on the substrate 1. In this case, it is an indispensable condition to irradiate with ultraviolet rays and to make the mask 3 with a material having good transmittance to ultraviolet rays such as quartz. Further, batch processing of a plurality of sheets is the same as in the case of using the mask shown in FIG. 1 or the ink jet droplets shown in FIG. 3 in the first embodiment (see FIG. 6).

  The provision of ultraviolet rays in the ozone application step according to Embodiment 2 can be performed in the same manner as in the above-described embodiment of the ultraviolet ray provision step in Embodiment 1.

  In the present invention, the monomolecular film pattern obtained as described above can be further subjected to a plating treatment such as electroless nickel plating, whereby a high-definition metal film pattern can be obtained easily and inexpensively. Can be created in the process. In the present invention, the present invention is not limited to this, and plating can also be performed using cobalt, copper, palladium, gold or the like.

  The present invention can also provide a high-definition monomolecular film pattern formed by the above-described method for producing a monomolecular film pattern with high throughput.

  The present invention can also provide an apparatus for producing a monomolecular film pattern using the method for producing a monomolecular film pattern described above. According to such a manufacturing apparatus, a high-definition monomolecular film pattern can be provided with high throughput.

  The present invention can also provide a method for manufacturing an electronic device using the above-described method for manufacturing a monomolecular film pattern with no environmental load, low resources, and low cost.

  The present invention can also provide an electronic device obtained by the method for manufacturing an electronic device. For example, as shown in FIG. 7A, a liquid material containing metal fine particles by an inkjet method or the like using a monomolecular lyophilic / liquid repellent pattern formed by using the method for producing a monomolecular film pattern described above. By applying 8 and firing, the conductive layer 9 and a fine metal wiring circuit excellent in smoothness can be formed as shown in FIG. An electronic device having a metal wiring circuit obtained in this manner can be used.

  In addition, this invention is not restrict | limited to the above-mentioned embodiment, A various change is possible in the range which does not deviate from the meaning of this invention.

  In the present invention, ozone is supplied to the portion of the monomolecular film in which the mask or the liquid is in contact with a part of the mask or the liquid is not in contact with the mask or the liquid is irradiated in the presence of oxygen. Since the main feature is that it includes a process, a pre-formed monomolecular film can be used without a process of forming a monomolecular film on a substrate or a step of placing a mask or a liquid in contact with the substrate. It is also possible to use a film in which a mask or a liquid is in contact with a part of the film.

  Hereinafter, the present invention will be described more specifically with reference to examples of the present invention. However, the present invention is not limited to the examples.

  A Si wafer and hexamethyldisilazane (HMDS) were placed in a sealed container, and the entire container was heated to form a trimethylsilyl (TMS) monolayer on the surface of the Si wafer. Thus, the board | substrate with which the TMS monomolecular layer was formed on Si wafer was produced. The film thickness of this monomolecular layer was 1 nm or less.

  Next, a mask in which holes having a width of 100 μm were cut at 200 μm intervals was brought into intimate contact with a monomolecular layer of the substrate on a quartz plate having a thickness of about 2 mm and placed in a sealed chamber. Ozone was supplied into the chamber, and after 20 minutes, the substrate was taken out. When the surface of the substrate was scanned using a frictional force microscope (Lateral Force Microscope), it was found that the frictional force was different between the 200 μm wide region covered with the mask and the 100 μm wide region in contact with ozone. Thereby, it was found that TMS was patterned according to the shape of the mask pattern.

  In the same manner as in Example 1, a substrate having a trimethylsilyl (TMS) monomolecular layer formed on the surface of a Si wafer was prepared, and hexadecane was linearly formed on this substrate in a 40 μm line shape every 100 μm using an ink jet method. Application was performed. This substrate was placed in a chamber in the same manner as in Example 1 and subjected to ozone treatment for 20 minutes. When the surface state was measured with a frictional force microscope, it was possible to produce TMS monomolecular film lines with a width of 40 μm every 100 μm.

  In Examples 1 and 2, ozone was supplied into the chamber, and at the same time, ultraviolet light was irradiated by a mercury lamp having a wavelength range of 200 nm to 380 nm. In this case, it was confirmed by a friction force microscope that a monomolecular film pattern having good contrast as in Example 1 or 2 could be formed in a processing time of only 5 minutes.

  The next is a step of forming a fine structure on the surface of the substrate based on the predetermined pattern using an electroless plating method on the substrates of Examples 1 to 3.

  Electroless nickel plating was performed in the following steps on a sample obtained by selectively patterning the TMS layer in the film formation step for forming a monomolecular film and the ozone donation step. First, as an activator, a mixed solution containing a palladium salt compound and hydrogen chloride was used. A sodium hydroxide aqueous solution was added to adjust the pH to 5.8 at room temperature. By immersing in this solution for about 2 minutes, palladium was adhered to the substrate surface. After removing from the liquid, it was washed in running water. The electroless nickel plating solution was kept under conditions of 70 ° C. and pH 4.6, and the washed sample was immersed for about 2 minutes. Then, after taking out from the liquid, it wash | cleaned in running water and dried. When this sample was observed with AFM and SEM, it was confirmed that a fine structure made of a nickel film was patterned on the quartz plate from which the TMS layer was removed. The nickel film thickness was approximately 200 nm.

  From the above results, it is possible to form a microstructure in a relatively short time by first patterning an ultrathin TMS layer by the process of the present invention and subsequently applying electroless nickel plating. It was confirmed.

  Example 5 is an example of a manufacturing method of lyophilic / liquid repellent patterning using a monomolecular film and a manufacturing method of a circuit device using the same.

  First, the lyophilic treatment of the glass substrate surface was performed with an ultraviolet ozone cleaner. After washing with pure water, octadecyltriethoxysilane and the substrate were placed in a sealed chamber and treated at 100 ° C. for 5 hours to form a uniform monomolecular film of octadecyltriethoxysilane on the glass substrate. The contact angle of this substrate surface with pure water was measured to be 104 degrees.

  Next, a quartz plate having a thickness of 3 mm, in which holes of a circuit pattern shape having a width of 20 μm and a depth of 1 mm are cut on a quartz plate having a thickness of 3 mm, is closely attached to the substrate on which the monomolecular film is formed as a mask. 10 sets in which the mask and the substrate were in close contact with each other were introduced into the chamber.

  Ozone was supplied into the chamber, and irradiation of ultraviolet light with a mercury lamp having a wavelength range of 200 nm to 380 nm was performed for 10 minutes on these substrates. As a result of taking out these substrates and measuring the contact angle with respect to pure water, the portion that was not in contact with the mask (the portion in which the hole was cut in the mask) had a contact angle of 5 degrees or less. The contact angle of the contacted portion remained 104 degrees. That is, it was confirmed that 10 monomolecular film substrates could be patterned with high definition at a time by the treatment of the present invention.

  By immersing the substrate in 10% hydrofluoric acid for 2 minutes and etching the glass using the monomolecular film as a mask, a uniform groove having a depth of 400 nm and a width of 20 μm could be formed. Next, a liquid material in which metal fine particles are dissolved in an organic solvent is applied by an ink jet method and baked at 200 ° C. for 30 minutes to form a metal wiring circuit having a width of 20 μm and good smoothness on a substrate. did it.

  In each of the above-described embodiments, an example in which a monomolecular film pattern is formed by bringing a mask having holes into contact with the surface of the monomolecular film on the substrate and irradiating ultraviolet rays in an ozone atmosphere has been shown. Instead, in the atmosphere in air (including oxygen), a mask having a depression was brought into contact with the surface of the monomolecular film on the substrate and irradiated with ultraviolet rays to form a monomolecular film pattern. Results were obtained.

  The present invention relates to a high-definition and high-throughput monomolecular film pattern manufacturing method and manufacturing apparatus, a high-definition monomolecular film pattern, a method for manufacturing an electronic device with low environmental impact, low resources, and low cost. It has industrial applicability as a high performance electronic device.

FIG. 1 is a schematic cross-sectional view showing an example in which a mask having holes is used in the ozone application step according to the present invention. FIG. 2 is a schematic cross-sectional view showing an example in which a mask having a depression is used in the ozone application process according to the present invention. FIG. 3 is a schematic cross-sectional view showing an example in which inkjet droplets are used in the ozone application step according to the present invention. FIG. 4 is a schematic cross-sectional view for explaining a process of applying ozone and applying ultraviolet rays as necessary in a chamber under an ozone atmosphere. FIG. 5 is a schematic cross-sectional view for explaining a process of applying ultraviolet rays in a chamber under an air (oxygen) atmosphere. FIG. 6 is a schematic cross-sectional view for explaining a batch process for manufacturing a large amount of monomolecular film pattern in a chamber under an ozone atmosphere. FIG. 7 is a schematic cross-sectional view for explaining a process of forming a conductive layer (fine metal wiring circuit) using the film pattern manufacturing method and the conductive layer manufacturing method according to the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Monomolecular film pattern, 1 ... Base | substrate, 2 ... Monomolecular film, 3 ... Mask, 4 ... Droplet, 5 ... Hole, 6 ... Depression, 7 ... Chamber, 8 ... Liquid material containing metal microparticles, 9 ... Conductivity layer

Claims (14)

Forming a monomolecular film on a substrate;
Placing a mask in contact with at least a portion of the monomolecular film;
Supplying ozone to the monomolecular film not in contact with the mask, or irradiating ultraviolet rays in the presence of oxygen;
The manufacturing method of the film | membrane pattern containing this. Forming a monomolecular film on a substrate;
Disposing a liquid on the monomolecular film;
Supplying ozone to the monomolecular film not in contact with the liquid, or irradiating ultraviolet rays in the presence of oxygen;
The manufacturing method of the film | membrane pattern containing this. In claim 2,
The step of arranging the liquid is a method for manufacturing a film pattern, which is performed using an inkjet method. In any one of Claims 1-3,
In the step of supplying ozone, a method of manufacturing a film pattern, wherein the ozone is supplied and ultraviolet rays are irradiated. Forming a monomolecular film on a substrate;
Placing a mask in contact with at least a portion of the monomolecular film in the presence of oxygen;
Irradiating the monomolecular film with ultraviolet light, and
The mask has a depression on the lower surface of the mask,
The step of arranging the mask is a film pattern manufacturing method in which the lower surface of the mask is arranged so as to contact the monomolecular film. In any one of Claims 1-5,
A method for producing a film pattern, wherein the substrate has ultraviolet transparency. Forming a monomolecular film on a substrate;
Placing a mask in contact with at least a portion of the monomolecular film;
Supplying ozone to the monomolecular film not in contact with the mask, or irradiating ultraviolet rays in the presence of oxygen to remove the monomolecular film not in contact with the mask;
Forming a conductive layer on the substrate from which the monomolecular film has been removed;
The manufacturing method of the conductive layer containing this. Forming a monomolecular film on a substrate;
Disposing a liquid on the monomolecular film;
Supplying ozone to the monomolecular film not in contact with the liquid, or irradiating ultraviolet rays in the presence of oxygen to remove the monomolecular film not in contact with the liquid;
Forming a conductive layer on the substrate from which the monomolecular film has been removed;
The manufacturing method of the conductive layer containing this. Forming a monomolecular film on a substrate;
Placing a mask in contact with at least a portion of the monomolecular film in the presence of oxygen;
Irradiating the monomolecular film with ultraviolet light, and removing the monomolecular film not in contact with the mask;
Forming a conductive layer on the substrate from which the monomolecular film has been removed,
The mask has a depression on the lower surface of the mask,
The step of arranging the mask is a method of manufacturing a conductive layer, wherein the lower surface of the mask is arranged so as to contact the monomolecular film.   The method for manufacturing a conductive layer according to claim 7, wherein the step of forming the conductive layer includes a step of performing a plating process.   The method for manufacturing a conductive layer according to claim 7, wherein the step of forming the conductive layer includes a step of applying a solution containing a material of the conductive layer.   12. The method for manufacturing a conductive layer according to claim 11, wherein the step of applying the solution is performed by an inkjet method.   The manufacturing method of the film | membrane pattern in any one of Claims 1-6, or the manufacturing method of the electronic device which uses the manufacturing method of the conductive layer in any one of Claims 7-12. An electronic device manufactured by the method for manufacturing an electronic device according to claim 13.

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