JP2005191640A - Solid-state image pickup apparatus, driving method thereof and camera - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state image pickup apparatus capable of realizing a high frame rate and reducing power consumption at the time of using a monitoring mode, and to provide a driving method thereof and a camera. <P>SOLUTION: The apparatus is provided with a plurality of photoelectric converting elements to be arranged in a matrix, a vertical transfer means arranged so as to correspond to each column of the photoelectric converting elements and transferring electric charges read from the photoelectric converting elements in a column direction, and a two-phase driving horizontal transfer means for transferring the electric charges transferred by the vertical transfer means in a row direction. The vertical transfer means is grouped into a plurality of columns, only the vertical transfer means selected from the plurality of columns transfer the electric charges, and the two-phase driving horizontal transfer means has a structure corresponding to each of the plurality of columns of the vertical transfer means. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a solid-state imaging device, a driving method thereof, and a camera, and more particularly to a solid-state imaging device capable of capturing moving images and still images, a driving method thereof, and a camera.

  A solid-state imaging device is an imaging device that includes a photoelectric conversion element that accumulates charges according to the amount of incident light, and a charge coupled device sensor (hereinafter referred to as a “CCD sensor”) that transfers charges read from the photoelectric conversion elements. The image is obtained. That is, photoelectric conversion elements are arranged in a matrix on a substrate in the solid-state imaging device, and a readout gate that connects each photoelectric conversion element and each CCD sensor arranged so as to correspond to each photoelectric conversion element is photoelectric. The accumulated charge is read from the conversion element, and the charge read by the vertical transfer means constituted by the CCD sensor is transferred toward the horizontal transfer means. Further, similar to the vertical transfer means, the horizontal transfer means constituted by the CCD sensor transfers the charges transferred from the vertical transfer means in units of columns toward the output unit. The output unit converts the transferred charge into a voltage and outputs a voltage. Through such operations, the solid-state imaging device obtains an image.

  Recently, there has been a growing need for higher resolution for images captured by solid-state imaging devices, and in order to meet this need for higher resolution, a large number of photoelectric conversion elements corresponding to pixels and reading from the photoelectric conversion elements are required. A large number of CCD sensors that transfer the emitted charges are mounted on the solid-state imaging device. However, since the number of charges to be transferred increases as the number of pixels increases, it takes time to read the image content, and the power consumed for the image content reading operation increases.

  On the other hand, in order to check the image contents at the time of imaging, or to enable imaging of images other than still images, that is, moving images, a monitoring mode is set in which a moving image is displayed on the monitor and imaging is performed while checking this monitor. There are an increasing number of solid-state imaging devices. However, due to hardware limitations of the solid-state imaging device, the frame rate cannot be increased, and the moving image rendering speed may not be increased. In this case, when the number of pixels increases, the frame rate further decreases in the monitoring mode, and there is a problem that the drawing speed of the moving image becomes slow. Further, the increase in the number of pixels increases the power consumption due to the use of the monitoring mode.

  Conventionally, the following improvement measures have been taken with respect to the problems of a decrease in frame rate and an increase in power consumption due to the increase in the number of pixels. In other words, in a fixed imaging device with multiple pixels, when monitoring mode or when you want to increase the frame rate, instead of reading the accumulated charge of all the pixels, it is a technique that thins out the pixels that read the accumulated charge in units of rows in the horizontal direction. (For example, refer to Patent Documents 1 and 2.)

JP-A-5-236354 (page 3, right column, line 17 to page 4, left column, line 41, FIG. 1) JP 2001-186418 (4th page, right column, line 47 to 5th page, right column, line 33, FIGS. 5 and 6)

  Employing the method of thinning out the readout of charges in units of rows as described above reduces the number of pixels of the display image in the monitoring mode by the thinning out, so that the effect of increasing the frame rate can be obtained. However, the structure of the horizontal transfer means corresponding to the column unit of the vertical transfer means does not change. Therefore, even if a method of thinning out the reading of charges in units of rows is adopted, the number of charges transferred in the horizontal transfer means and the transfer frequency do not change greatly, so the effect of reducing power consumption is not so great.

  The present invention has been made to solve the above-described problems, and aims to reduce power consumption in the monitoring mode and when the frame rate is increased.

This invention
A plurality of photoelectric conversion elements arranged in a matrix;
A vertical transfer means arranged corresponding to each column of the photoelectric conversion elements, and transferring charges read from the photoelectric conversion elements in a column direction;
Two-phase driving horizontal transfer means for transferring the charges transferred by the vertical transfer means in a row direction;
The vertical transfer means is grouped into a plurality of columns,
Only the vertical transfer means selected from the plurality of columns transfers charges read from the photoelectric conversion elements,
The two-phase driving horizontal transfer means has a structure corresponding to each of a plurality of columns of the vertical transfer means.

  The present invention can reduce power consumption while increasing the frame rate when using the monitor mode.

Embodiment 1 FIG.
In the solid-state imaging device according to the present invention, photoelectric conversion elements arranged in a matrix are grouped into a plurality of columns, and a two-phase driving horizontal transfer unit has a structure corresponding to the plurality of columns.
Hereinafter, the present invention will be specifically described with reference to the drawings showing embodiments thereof.

  FIG. 1 is a block diagram illustrating a configuration of a system for driving the solid-state imaging device according to the first embodiment, and FIG. 2 is a diagram illustrating a structure of the solid-state imaging device according to the first embodiment. An outline of a solid-state imaging device and a driving method thereof will be described with reference to FIGS. 1 and 2.

  In FIG. 1, a timing generator (hereinafter referred to as “TG”) 11 has a function of generating a driving pulse for driving the solid-state imaging device 1. Of the drive pulses generated by the TG 11, horizontal drive pulses H 1 and H 2 that can directly drive the solid-state image sensor 1 are input to the solid-state image sensor 1 as they are. On the other hand, among the drive pulses generated by TG11, vertical drive pulses VI1 to VI4, read pulses TGI1 to TGI3, and overflow drain pulse OFD pulse OFDI, which require a high voltage or a negative voltage, are once transferred to a vertical transfer driver ( (Hereinafter referred to as “V driver”) 12, converted into necessary voltages, converted into vertical drive pulses V 1 to V 4, read pulses TG 1 to TG 3, overflow drain pulse OFD pulse OFD, and then solid-state imaging Input to element 1.

  As shown in FIG. 2, on the substrate in the solid-state imaging device 1, a photoelectric conversion element 2 that accumulates electric charges according to the amount of incident light from the subject has N rows in the horizontal row direction and M in the vertical column direction. Arranged in a matrix of columns. Each of the photoelectric conversion elements 2 corresponds to each pixel of the solid-state imaging element 1. Each photoelectric conversion element 2 and the vertical transfer means 4 for transferring charges in the vertical direction are connected by a read gate 3. The readout gate 3 is driven by readout pulses TG 1 to TG 3 applied via the readout wiring 9, and reads out the charges accumulated in the photoelectric conversion element 2 to the vertical transfer means 4. The vertical transfer means 4 is driven by vertical drive pulses V 1 to V 4 applied via the vertical drive wiring 7, and transfers the read charges to the horizontal transfer means 5. The horizontal transfer means 5 is driven by horizontal drive pulses H 1 and H 2 applied via the horizontal drive wiring 8, and transfers charges to the output unit 6. The output unit 6 converts the transferred charge from current to voltage and outputs the voltage.

  The first operation mode of the solid-state imaging device and the driving method thereof according to Embodiment 1 will be described in detail with reference to FIGS. The first operation mode in this embodiment is to thin out columns of photoelectric conversion elements that read out electric charges. In other words, this is an operation mode in which charges in only one column are read out from a set of photoelectric conversion elements including a plurality of columns. In the present embodiment, the photoelectric conversion elements 2 are grouped in units of three columns, and are referred to as photoelectric conversion elements 2a, 2b, and 2c. The readout gate, vertical transfer means, and readout wiring corresponding to each photoelectric conversion element are also designated as readout gates 3a, 3b, 3c, vertical transfer means 4a, 4b, 4c, and readout wirings 9a, 9b, 9c, respectively. .

  The two-phase driving horizontal transfer means 5 has a structure corresponding to the vertical transfer means 4 grouped in units of three columns, and the horizontal transfer means 5a receives a horizontal drive pulse H1 and the horizontal transfer means 5b. The horizontal drive pulse H2 is applied respectively. The charges read from the vertical transfer means 4a and 4b are transferred to the horizontal transfer means 5a to which the horizontal drive pulse H1 is applied, and the charges read from the vertical transfer means 4c are applied to the horizontal drive pulse H2. Is transferred to the horizontal transfer means 5b. That is, the horizontal transfer means 5 which is a two-phase drive has a structure having two transfer units with respect to the three columns of vertical transfer means.

  First, the charge 21 corresponding to the amount of incident light from the subject is accumulated in the photoelectric conversion element 2. In FIG. 3, R, G, and B described on the photoelectric conversion element 2 mean colors of red, green, and blue color filters, respectively. Accordingly, in each photoelectric conversion element 2, charges 21 corresponding to the respective colors are accumulated in the photoelectric conversion element 2.

  Next, the readout pulse TG1 is applied to the readout gate 3a connected to the readout wiring 9a in the readout gate 3 through the readout wiring 9a. As a result, the charge 21 accumulated in the photoelectric conversion element 2a is read out to the vertical transfer means 4a. This operation is shown in FIG. Although the vertical transfer means 4 is constituted by a CCD corresponding to each photoelectric conversion element 2, the structure of the vertical transfer means 4 is not directly related to the contents of the present invention, and the details thereof are omitted. ing.

  After the charge 21 accumulated in the photoelectric conversion element 2a is read out to the vertical transfer means 4a, the vertical drive pulses V1 to V4 are respectively applied to the vertical transfer means 4 through the vertical drive wiring 7 so that the charges 21 are horizontal. The data is sequentially transferred to the transfer means 5a. This operation is shown in FIG. Note that the vertical drive pulses V1 to V4 are applied to the vertical transfer units 4a to 4c of all the columns, but the accumulated charges 21 are not read from the photoelectric conversion elements 2b and 2c. Accordingly, the vertical transfer means 4b and 4c only perform empty transfer, and even if the vertical drive pulses V1 to V4 are applied to them, the transfer of the electric charges 21 read from the photoelectric conversion element 2a is affected. Don't give.

  After the charge 21 for one row is transferred to the horizontal transfer means 5a, the horizontal drive pulses H1 and H2 are respectively applied to the horizontal transfer means output portions 5a and 5b via the horizontal drive wirings 8a and 8b, and the charge 21 is output to the output portion. 6 is transferred. The output unit 6 converts the transferred charge 21 into a voltage and outputs it. This operation is shown in FIG.

  After the transfer of the charge 21 for one row is completed, the vertical drive pulses V1 to V4 are again applied to the vertical transfer means 4, and the charge 21 for one row is transferred to the horizontal transfer means 5a. Then, the charge 21 is transferred from the horizontal transfer means 5 to the output unit 6. By repeating this operation, all the charges 21 read from the photoelectric conversion element 2a are transferred to the output unit 6 as shown in FIG. After the transfer of all the read charges 21 is completed, an overflow drain pulse OFD pulse 10 is applied to the substrate. As a result, the charge 21 left in the photoelectric conversion elements 2b and 2c is discharged from the substrate, and the charge 21 is lost from all the photoelectric conversion elements 2a to 2c.

  FIG. 8 shows the relationship between the VD signal output for each frame, the output image data DATA, and the readout pulse TG. As shown in FIG. 8, between each VD signal, that is, in each frame, a readout pulse TG1 is applied, and the charges accumulated in the photoelectric conversion element 2a are read out to form one frame of image data. Therefore, compared with the case where the charges of all the pixels are read, the power consumption of the image data is about 1/3, and the frame rate is tripled. In other words, when the image size may be small or when the monitoring mode requires a high frame rate, the first operation mode according to the present embodiment is used to capture and monitor these requirements. It becomes possible. In addition, since the horizontal transfer means 5 is structured not to correspond to the vertical transfer means for every column but to the vertical transfer means for every three columns, the number of charges transferred in the horizontal transfer means and the transfer frequency are reduced. It becomes possible to reduce power consumption.

  In other words, the conventional fixed imaging device has a structure having two-phase horizontal transfer means provided with two transfer units for each column with respect to M columns of vertical transfer means. Was necessary. However, if the structure described in this embodiment mode is used, a transfer unit of 2/3 * M is sufficient as a whole, so that the number of times of charge transfer can be reduced.

  Next, the second operation mode in the solid-state imaging device and the driving method thereof according to Embodiment 1 will be described in detail with reference to FIGS. The second operation mode is a mode for reading all charges accumulated in the photoelectric conversion element 2.

  First, the operation in which the charge 21 corresponding to the amount of incident light from the subject is accumulated in the photoelectric conversion element 2 is the same as in the first operation mode. Further, as shown in FIG. 9, TG1 is applied to the readout gate 3a via the readout wiring 9a, and the operation in which the charge 21 stored in the photoelectric conversion element 2a is read out to the vertical transfer means 4a is also the first operation. It is the same as the operation mode. Further, as shown in FIGS. 10 and 11, the vertical transfer pulses V1 to V4 are respectively applied to the vertical transfer means 4 and the charges 21 for one row are sequentially transferred to the horizontal transfer means 5a, the horizontal transfer means 5a. The horizontal drive pulses H1 and H2 are respectively applied to 5b and the operation of transferring the charge 21 to the output unit 6, the operation of converting the charge 21 into a voltage at the output unit 6 and outputting, and the series of operations are repeated. The operation of transferring all the charges 21 read from the photoelectric conversion element 2a is the same as in the first operation mode.

  Next, the charge 21 accumulated in the photoelectric conversion element 2b is read out. That is, the readout pulse TG2 is applied to the readout gate 3b connected to the readout wiring 9b through the readout wiring 9b. Thereby, the electric charge 21 accumulated in the photoelectric conversion element 2b is transferred to the vertical transfer means 4b. This operation is shown in FIG. Further, vertical drive pulses V1 to V4 are respectively applied to the vertical transfer means 4, and the charges 21 read out to the vertical transfer means 4b are sequentially transferred to the horizontal transfer means 5a. This operation is shown in FIG. After the charge 21 for one row is transferred to the horizontal transfer means 5 a, horizontal drive pulses H 1 and H 2 are applied to the horizontal transfer means output section 5, and the charges 21 are transferred to the output section 6. The output unit 6 converts the transferred charge 21 into a voltage and outputs it. After the transfer of the charge 21 for one row is completed, a series of these operations are repeated, and all of the charge 21 read from the photoelectric conversion element 2 b is transferred to the output unit 6, and a voltage is output from the output unit 6. FIG. 14 shows a state where all the charges 21 read from the photoelectric conversion element 2b have been transferred.

  Further, as in the work described above, as shown in FIGS. 15 and 16, the reading of the charge 21 from the photoelectric conversion element 2c, the transfer of the charge 21 to the horizontal transfer means 5b by the vertical transfer means 4c, and the horizontal transfer means 5 is transferred, and the output unit 6 outputs a voltage. FIG. 17 shows a state where all the charges 21 read from the photoelectric conversion element 2c have been transferred. In addition, since the charge 21 has already been read from the photoelectric conversion elements 2a and 2b before the charge 21 is read from the photoelectric conversion element 2c, the charge 21 is present in all the photoelectric conversion elements 2 in the state shown in FIG. do not do.

  FIG. 18 shows the relationship between the video signal VD signal output for each frame and the output data signal DATA. First, a read pulse TG1 is applied between the VD signals, that is, in one frame, whereby the charges accumulated in the photoelectric conversion element 2a are read, and image data that is 1/3 of the entire screen data is obtained. Next, the read pulse TG2 is applied and the charge accumulated in the photoelectric conversion element 2b is read out. Finally, the read pulse TG3 is applied and the charge accumulated in the photoelectric conversion element 2c is read out. Then, it is possible to obtain full-screen image data using each read image data.

  As described above, the solid-state imaging device according to the first embodiment can obtain the full screen size by using the second operation mode. That is, by properly using the first operation mode and the second operation mode, it is possible to perform imaging in the monitoring mode where a high frame rate is required and imaging of a high-definition image.

  Furthermore, when the first operation mode is used, imaging at a high frame rate is possible, and imaging with reduced power consumption can be performed.

In the present embodiment, the vertical transfer means 4b transfers the charge 21 to the horizontal transfer means 5a, but it may have a structure for transferring the charge to the horizontal transfer means 5b.
Further, although the horizontal transfer means has a structure corresponding to three columns of vertical transfer means, the present invention is not limited to this. That is, it is possible to change the thinning number of the vertical transfer means for reading out charges, for example, one column every two columns or every four or more columns, and the structure of the horizontal transfer means can correspond to this thinning number.
Furthermore, in the present embodiment, the vertical transfer means is driven by four phases of vertical drive pulses V1 to V4, but is not limited to this, and may be three phases or less, or five phases or more.

Embodiment 2. FIG.
In the present embodiment, a solid-state imaging device and a driving method thereof that are different from the solid-state imaging device described in the first embodiment in the following two points will be described. That is, in the first embodiment, the vertical drive wiring 7 is connected to all the vertical drive means 4, but in this embodiment, the vertical drive wiring is connected to the photoelectric conversion elements 2a, 2b, The vertical drive wirings 7a, 7b, and 7c are configured to correspond to 2c, respectively. In the first embodiment, the readout wiring 9 is configured as the readout wirings 9a, 9b, 9c so as to correspond to the readout gates 3a, 3b, 3c in each column, and the readout gates 3a, 3b, 9c in each column, respectively. Although connected to 3c, in the present embodiment, it is connected to all the read gates 3.

  Next, the outline of the solid-state imaging device according to the present embodiment and the driving method thereof will be described with reference to FIGS. FIG. 19 is a configuration diagram of a system for driving the solid-state imaging device according to the second embodiment, and FIG. 20 is a diagram illustrating a structure of the solid-state imaging device according to the second embodiment.

  In FIG. 19, the TG 11 has a function of generating a driving pulse for driving the solid-state imaging device 1 as in the first embodiment. Of the drive pulses generated by the TG 11, horizontal drive pulses H 1 and H 2 that can directly drive the solid-state image sensor 1 are input to the solid-state image sensor 1 as they are. On the other hand, among the drive pulses generated by TG11, vertical drive pulses VAI1 to VAI4, VBI1 to VBI4, VCI1 to VCI4, and read pulse TGI, which require a high voltage or a negative voltage, are once input to V driver 12. After being converted into necessary voltages and converted into vertical drive pulses VA1 to VA4, VB1 to VB4, VCI1 to VCI4, and a readout pulse TG1, respectively, they are input to the solid-state imaging device 1.

  The structure in the solid-state imaging device 1 shown in FIG. 20 is the same as that of the first embodiment except that the structures of the vertical drive wiring 7 and the readout wiring 9 are different as described above. To do. Hereinafter, the first operation mode of the solid-state imaging device and the driving method thereof according to Embodiment 2 will be described in detail with reference to FIGS. Note that, as in the first embodiment, the first operation mode in this embodiment also thins out the columns of photoelectric conversion elements from which charges are read. In other words, this is an operation mode in which charges in only one column are read out from a set of photoelectric conversion elements including a plurality of columns.

  First, the charge 21 corresponding to the amount of incident light from the subject is accumulated in the photoelectric conversion element 2. FIG. 21 shows a state where the charges 21 are accumulated in the photoelectric conversion element 2.

  Next, a read pulse TG is applied to the read gate 3 via the read wiring 9. Thereby, the charges 21 accumulated in all the photoelectric conversion elements 2 are read out to the vertical transfer means 4. This operation is shown in FIG.

  After the charges 21 accumulated in the photoelectric conversion element 2 are read out to the vertical transfer means 4, the vertical drive pulses VA1 to VA4 are respectively applied to the vertical transfer means 4a via the vertical drive wiring 7a. The charges 21 read out to 4a are sequentially transferred to the horizontal transfer means 5a. This operation is shown in FIG.

  After the charge 21 for one row is transferred to the horizontal transfer means 5a, the horizontal drive pulses H1 and H2 are respectively applied to the horizontal transfer means output portions 5a and 5b via the horizontal drive wirings 8a and 8b, and the charge 21 is output to the output portion. 6 is transferred. The output unit 6 converts the transferred charge 21 into a voltage and outputs it. This operation is shown in FIG.

  After the transfer of the charge 21 for one row is completed, the vertical drive pulses VA1 to VA4 are again applied to the vertical transfer means 4a, and the charge 21 for one row is transferred to the horizontal transfer means 5a. Then, the charge 21 is transferred from the horizontal transfer means 5 to the output unit 6. By repeating this operation, all the charges 21 read from the photoelectric conversion element 2a are transferred to the output unit 6, as shown in FIG. In the first operation mode, image data is formed by the charges read from the photoelectric conversion element 2a.

  Next, transfer of charges read from the photoelectric conversion elements 2b and 2c will be described. The charges read from the photoelectric conversion elements 2b and 2c are not used for forming image data. First, the vertical drive pulses VB1 to VB4 are applied to the vertical transfer means 4b and the vertical drive pulses VC1 to VCC are applied to the vertical transfer means 4c via the vertical drive wirings 7b and 7c, respectively. Then, the charges 21 read out to the vertical transfer means 4b are sequentially transferred to the horizontal transfer means 5a, and the charges 21 read out to the vertical transfer means 4c are sequentially transferred to the horizontal transfer means 5b. This operation is shown in FIG.

  As shown in FIG. 26, the charges read from the two vertical transfer means 4b and 4c are transferred to the horizontal transfer means 5 at the same timing. Therefore, charges are present in the horizontal transfer means 5a and 5b, causing a phenomenon of color mixing in which the charges transferred from the respective vertical transfer means are mixed. However, when the image data is formed, the charges transferred by the vertical transfer means 4b and 4c are not used, so that there is no particular problem.

  FIG. 27 shows the relationship between the VD signal output for each frame, the output image data DATA, and the readout pulse TG. As shown in FIG. 27, between each VD signal, that is, in each frame, first, a read pulse TG is applied to read out charges accumulated in the photoelectric conversion element 2. Next, by applying vertical drive pulses VA1 to VA4 only to the vertical transfer means 4a, one frame of image data is formed. This image data has a size of about 1/3 when the charges of all the pixels are read out. Therefore, when the image size may be small or in the monitoring mode that requires a high frame rate, the first operation mode in the present embodiment can be used to perform imaging corresponding to these requirements. Become. In addition, since the horizontal transfer means 5 is structured not to correspond to the vertical transfer means for every column but to the vertical transfer means for every three columns, the number of charges transferred in the horizontal transfer means and the transfer frequency are reduced. It becomes possible to reduce power consumption.

  That is, since the charges transferred from the vertical transfer means 4b and 4c are not used as image data, the charge read time is about 2/3 as compared with the case of reading the full screen data by transferring them together. It becomes.

  Next, the second operation mode in the solid-state imaging device and the driving method thereof according to Embodiment 2 will be described in detail with reference to FIGS. The second operation mode is a mode for reading all charges accumulated in the photoelectric conversion element 2.

First, the operation in which the electric charge 21 corresponding to the amount of incident light from the subject is accumulated in the photoelectric conversion element 2 is the same as in the first operation mode. As shown in FIG. 28, the operation in which TG is applied to the readout gate 3 via the readout wiring 9 and the charge 21 stored in the photoelectric conversion element 2 is read out to the vertical transfer means 4 is also the first operation. It is the same as the operation mode. Further, as shown in FIGS. 29 and 30, the vertical drive pulses VA1 to VA4 are respectively applied to the vertical transfer means 4a, and the charge 21 for one row is sequentially transferred to the horizontal transfer means 5, and the horizontal transfer means output. The horizontal drive pulses H1 and H2 are respectively applied to the units 5a and 5b, and the operation of transferring the charge 21 to the output unit 6, the operation of converting the charge 21 into a voltage at the output unit 6 and outputting, and the series of operations The operation of repeatedly transferring all the charges 21 read to the vertical transfer means 4a is the same as in the first operation mode.

  Next, the electric charges 21 read by the vertical transfer means 4b are transferred to the horizontal transfer means 5a. That is, the vertical drive pulses VB1 to VB4 are applied to the vertical transfer means 4b connected to the vertical drive wiring 7b through the vertical drive wiring 7b. As a result, the charges 21 read out to the vertical transfer means 4b are sequentially transferred to the horizontal transfer means 5a. This operation is shown in FIG. After the charge 21 for one row is transferred to the horizontal transfer means 5 a, horizontal drive pulses H 1 and H 2 are applied to the horizontal transfer means output section 5, and the charges 21 are transferred to the output section 6. The output unit 6 converts the transferred charge 21 into a voltage and outputs it. After the transfer of the charge 21 for one row is completed, a series of these operations are repeated, and all of the charge 21 read from the photoelectric conversion element 2 b is transferred to the output unit 6, and a voltage is output from the output unit 6. FIG. 32 shows a state where all the charges 21 read out to the vertical transfer means 4b are transferred.

  Further, as in the operation described above, as shown in FIG. 33, the transfer of charges 21 to the horizontal transfer means 5b by the vertical transfer means 4c, the transfer of charges 21 by the horizontal transfer means 5, and the voltage output by the output unit 6 Done. FIG. 34 shows a state where all the charges 21 that have been read out to the vertical transfer means 4c have been transferred. Incidentally, since the charges 21 that have already been read out to the vertical transfer means 4a and 4b are also transferred before transferring the charges 21 that have been read out to the vertical transfer means 4c, in the state shown in FIG. There is no charge 21 in the vertical transfer means 4.

  FIG. 35 shows the relationship between the VD signal output for each frame, the output image data DATA, and the readout pulse TG. As shown in FIG. 35, between each VD signal, that is, in each frame, first, a read pulse TG is applied, and the charge accumulated in the photoelectric conversion element 2 is read. Next, by applying vertical drive pulses VA1 to VA4 only to the vertical transfer means 4a, image data that is 1/3 of the entire screen data is obtained. Next, the charges read out to the vertical transfer means 4b are applied by applying the vertical drive pulses VB1 to VB4, and finally the charges read out to the vertical transfer means 4c are applied by applying the vertical drive pulses VC1 to VC4. Transferred. Then, it is possible to obtain full-screen image data using each read image data. One frame of image data is formed.

  As described above, the solid-state imaging device according to the second embodiment can also capture a full screen size by using the second operation mode. That is, by properly using the first operation mode and the second operation mode, it is possible to perform imaging in the monitoring mode where a high frame rate is required and imaging of a high-definition image.

  As described above, the solid-state imaging device according to the present embodiment also has a structure in which the charges 21 to be read out to the vertical transfer unit 4 are thinned out in the column direction, and the horizontal transfer unit has a structure corresponding to a plurality of columns of vertical transfer units. High frame rate imaging with reduced power consumption is possible.

  The structure of the horizontal transfer unit, the thinning method of the vertical transfer unit, and the driving method of the vertical transfer unit are not limited to those described in the first embodiment.

Embodiment 3 FIG.
In this embodiment, a camera including the solid-state imaging device described in Embodiments 1 and 2 will be described. FIG. 36 is a block diagram showing the configuration of the camera in the third embodiment.

The camera according to the third embodiment includes the TG 11, the V driver 12, and the solid-state imaging device 1 described in the first and second embodiments. Further, the optical system 30 has a function of forming incident light from a subject on the solid-state image sensor 1, and the signal processing circuit 31 processes a signal output from the solid-state image sensor 1, The signal is output to the image recording means 32 and the image display means 33. The mode setting unit 34 controls the timing of the entire camera according to the third embodiment and sets the imaging mode for the TG 11.

  That is, the mode setting unit 34 appropriately selects and sets a mode for capturing a still image and a monitoring mode for displaying the image being captured on a monitor in accordance with commands from the user and other devices inside and outside. When the monitoring mode is set, the fixed imaging device is operated in the first operation mode described in the first and second embodiments.

  As a result, the fixed imaging device can be operated without reducing the frame rate in the monitoring mode, and the power consumption can be further reduced.

  Furthermore, high-definition image data can be obtained by using the second operation mode.

1 is a block diagram illustrating a configuration of a system for driving a solid-state imaging device according to Embodiment 1. FIG. 1 is a diagram illustrating a structure of a solid-state imaging device according to Embodiment 1. FIG. FIG. 6 is an explanatory diagram illustrating a first operation mode in the first embodiment. FIG. 6 is an explanatory diagram illustrating a first operation mode in the first embodiment. FIG. 6 is an explanatory diagram illustrating a first operation mode in the first embodiment. FIG. 6 is an explanatory diagram illustrating a first operation mode in the first embodiment. FIG. 6 is an explanatory diagram illustrating a first operation mode in the first embodiment. 6 is a diagram illustrating timing of each signal in the first operation mode of the first embodiment. FIG. 6 is an explanatory diagram illustrating a second operation mode according to Embodiment 1. FIG. 6 is an explanatory diagram illustrating a second operation mode according to Embodiment 1. FIG. 6 is an explanatory diagram illustrating a second operation mode according to Embodiment 1. FIG. 6 is an explanatory diagram illustrating a second operation mode according to Embodiment 1. FIG. 6 is an explanatory diagram illustrating a second operation mode according to Embodiment 1. FIG. 6 is an explanatory diagram illustrating a second operation mode according to Embodiment 1. FIG. 6 is an explanatory diagram illustrating a second operation mode according to Embodiment 1. FIG. 6 is an explanatory diagram illustrating a second operation mode according to Embodiment 1. FIG. 6 is an explanatory diagram illustrating a second operation mode according to Embodiment 1. FIG. 6 is a diagram illustrating timing of each signal in the second operation mode of the first embodiment. FIG. 6 is a block diagram illustrating a configuration of a system for driving a solid-state imaging apparatus according to Embodiment 2. FIG. 6 is a diagram illustrating a structure of a solid-state imaging device according to Embodiment 2. FIG. 10 is an explanatory diagram for explaining a first operation mode in Embodiment 2. FIG. 10 is an explanatory diagram for explaining a first operation mode in Embodiment 2. FIG. 10 is an explanatory diagram for explaining a first operation mode in Embodiment 2. FIG. 10 is an explanatory diagram for explaining a first operation mode in Embodiment 2. FIG. 10 is an explanatory diagram for explaining a first operation mode in Embodiment 2. FIG. FIG. 10 is an explanatory diagram illustrating a first operation mode in the second embodiment. FIG. 10 is a diagram illustrating the timing of each signal in the first operation mode of the second embodiment. 6 is a diagram illustrating a structure of a solid-state imaging device according to Embodiment 2. FIG. 10 is an explanatory diagram illustrating a second operation mode in the second embodiment. FIG. 10 is an explanatory diagram illustrating a second operation mode in the second embodiment. FIG. 10 is an explanatory diagram illustrating a second operation mode in the second embodiment. FIG. 10 is an explanatory diagram illustrating a second operation mode in the second embodiment. FIG. 10 is an explanatory diagram illustrating a second operation mode in the second embodiment. FIG. 10 is an explanatory diagram illustrating a second operation mode in the second embodiment. FIG. FIG. 10 is a diagram illustrating the timing of each signal in the second operation mode of the second embodiment. 10 is a block diagram illustrating a configuration of a camera according to Embodiment 3. FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Solid-state image sensor, 2 Photoelectric conversion element, 3 Read gate, 4 Vertical transfer means, 5 Horizontal transfer means, 6 Output part, 7 Vertical drive wiring, 8 Horizontal drive wiring, 9 Read wiring, 10 Overflow drain pulse, 11 Timing generator, 12 Vertical transfer driver, 21 Charge

Claims (9)

A plurality of photoelectric conversion elements arranged in a matrix;
A vertical transfer means arranged corresponding to each column of the photoelectric conversion elements, and transferring charges read from the photoelectric conversion elements in a column direction;
Two-phase driving horizontal transfer means for transferring the charges transferred by the vertical transfer means in a row direction;
The vertical transfer means is grouped into a plurality of columns,
Only the vertical transfer means selected from the plurality of columns transfers the charge,
The solid-state imaging device according to claim 2, wherein the two-phase driving horizontal transfer means has a structure corresponding to each of a plurality of columns of the vertical transfer means. 2. The solid-state imaging device according to claim 1, wherein the selected vertical transfer means is one column for every plurality of columns. 3. The solid-state imaging device according to claim 1, wherein the column of the selected vertical transfer means is switched after the charge transfer by the horizontal transfer means is completed. A plurality of readout gates for connecting the photoelectric conversion element and the vertical transfer means corresponding to the photoelectric conversion element,
A readout pulse is applied only to a readout gate corresponding to a vertical transfer means selected from a plurality of columns, and charges are read out only from photoelectric conversion elements connected to the readout gate to which the readout pulse is applied. The solid-state imaging device according to any one of claims 1 to 3. 4. The solid-state imaging device according to claim 1, wherein a vertical drive pulse for transferring charges is applied only to a vertical transfer unit selected from a plurality of columns. 5. A plurality of photoelectric conversion elements arranged in a matrix;
A vertical transfer means arranged corresponding to each column of the photoelectric conversion elements, and transferring charges read from the photoelectric conversion elements in a column direction;
A method of driving a solid-state imaging device having a structure corresponding to each of a plurality of columns of the vertical transfer means, and a two-phase drive horizontal transfer means for transferring the charge in a row direction,
A grouping step of grouping the vertical transfer means into a plurality of columns;
A selection step of selecting one column of vertical transfer means from the plurality of columns;
And a reading step of reading out electric charges from the column of photoelectric conversion elements corresponding to the column of the selected vertical transfer means. A plurality of photoelectric conversion elements arranged in a matrix;
A vertical transfer means arranged corresponding to each column of the photoelectric conversion elements, and transferring charges read from the photoelectric conversion elements in a column direction;
A method of driving a solid-state imaging device having a structure corresponding to each of a plurality of columns of the vertical transfer means, and a two-phase drive horizontal transfer means for transferring the charge in a row direction,
A reading step of reading charges from all the photoelectric conversion elements;
A grouping step of grouping the vertical transfer means into a plurality of columns;
A selection step of selecting one column of vertical transfer means from the plurality of columns;
And a charge transfer step in which a vertical drive pulse for transferring the read charges is applied only to the selected column of the vertical transfer means. 8. The method for driving a solid-state imaging device according to claim 6, further comprising a switching step of switching a column of the selected vertical transfer means after completion of charge transfer by the horizontal transfer means. A camera provided with the solid-state imaging device according to claim 1.

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