JP2005187806A - Light emitting thin film and optical device thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting thin film and optical device thereof, having high luminance, stable chemical property and capable of reducing cost. <P>SOLUTION: The light emitting thin film of the invention is obtained in the following processes, vapor depositing EuSi<SB>2</SB>and SiO<SB>2</SB>on a silicon substrate 1, forming an annealed ESO (light emitting thin film) 2 on a p-type silicon substrate 1, depositing a transparent ITO electrode 3 by RF (radio frequency) sputtering to obtain an electroluminescence, on the light emitting thin film 2, forming an aluminum electrode 4 on the back side of the Si substrate 1, and then loading a DC power supply between both electrodes. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a light-emitting thin film and an optical device used for optical communication, a self-luminous display device, an optical integrated circuit, a light source, and the like.

  Since the silicon (Si) semiconductor that supports the current electronics technology is an indirect transition type and has a very low luminous efficiency, light emitting devices used in OE (optical / electrical) ICs and display materials are Organic materials and direct transition type compound semiconductors with high luminous efficiency such as GaAs and GaN are used.

  However, these materials are inferior to Si semiconductors in terms of (1) material stability, (2) oxide film quality, (3) resource abundance, and (4) integrated circuit fabrication technology. Therefore, the appearance of Si semiconductors that shine strongly at room temperature is expected.

  Against this background, in recent years, attempts to realize strong light emission by making nanostructures of Si semiconductors have become active. For example, a Si / Ge superlattice is fabricated, and a method of changing an indirect transition semiconductor to a direct transition semiconductor using the band folding effect (see Non-Patent Document 1 below), Si one-dimensional or zero-dimensional nano A method of producing a structure and extracting light emission from a Si semiconductor using the quantum effect (see Non-Patent Document 2 below) has been reported.

In recent years, a method of producing a porous Si structure by electrochemically etching a Si substrate and extracting light emission from this material has also attracted attention (see Non-Patent Document 3 below).
S. Fukatsu, H .; Yoshida, A .; Fujiwara, Y .; Takahashi, Y .; Shiraki, and R.K. Ito, Appl. Phys. Lett. 61, 804 (1992). H. Takagi, H .; Ogawa, Y .; Yamazaki, A .; Ishizaki, and T.I. Nakagiri, Appl. Phys. Lett. 56, 2379 (1990). L. T.A. Canham, Appl. Phys. Lett. 57, 1046 (1990). P. Bealulul et al. , Appl. Phys. Lett. 63, 1954 (1993).

  However, in the production of a Si / Ge superlattice, the lattice spacing of Si and Ge to be grown is not equal, so that a lattice mismatch occurs at the Si / Ge superlattice interface, resulting in inevitably many interface defects. . As a result, this defect becomes a non-radiation center, and there is a problem that strong light emission cannot be expected.

  In a method of producing one-dimensional or zero-dimensional nanostructures of Si and extracting light emission from the Si semiconductor using the quantum effect, the size of these nanostructures required for extracting light emission is from 2 nm. Since it is very small as 5 nm, (1) to make these structures with good controllability (to make the size uniform), (2) because the specific surface area of nanostructures is enormous, how to make this surface a non-radiative center Whether to terminate so as not to form, and to perform stable surface termination over a long period of time. (3) When an electrode is fabricated in a nanostructure of 2 nm to 5 nm, the contact point between the nanostructure and the electrode is very small. There is a problem that a large electric field is applied to the contact point and the life is extremely shortened.

  In the porous Si structure, a large amount of hydrogen is terminated on the surface of the porous nanostructure, and this hydrogen is easily desorbed, so that the physical and chemical properties are extremely unstable. Has a point.

  By the way, phosphor materials such as Eu, Ce, and Tb are conventionally known as high-luminance light emitters that are used in fluorescent lamps, X-ray photoreceptors, and the like. However, there are almost no attempts to fuse these materials and Si semiconductors, and if necessary, very expensive molecular beam epitaxy and ion implantation techniques are required (see Non-Patent Document 4 above). There are problems in mass production, price, and the like.

In addition, despite the fact that the sample is prepared using such an expensive apparatus, the Ca · F ₂ layer doped with Eu deposited on Si is very However, it has problems such as low brightness.

  An object of the present invention is to eliminate the above-mentioned problems, and to provide a light-emitting thin film and an optical device thereof that have high brightness, have stable chemical properties, and can be reduced in price.

In order to achieve the above object, the present invention provides
[1] In the light-emitting thin film, EuSi ₂ is sputtered on a Si substrate together with Si, and then subjected to an annealing treatment. In the sputtering or annealing, Eu ₃ SiO ₃ treated in an atmosphere gas to which oxygen is added or It is characterized by comprising an aggregate of fine particles of Eu ₂ SiO ₄ .

[2] In an optical device, EuSi ₂ is sputtered on a Si substrate together with Si, and then subjected to an annealing treatment. In the sputtering or annealing, Eu ₃ SiO ₃ treated in an atmosphere gas to which oxygen is added or A light emitting thin film made of an aggregate of Eu ₂ SiO ₄ fine particles and an ITO electrode formed on the light emitting thin film are provided.

  [3] An optical coupling element function including an optical device including the light-emitting thin film according to the above [1] in a light-emitting unit, a common Si substrate, and a light-receiving unit integrated in a horizontal direction through an optical waveguide. It is characterized by having.

  [4] An optical device is characterized in that the light-emitting thin film according to [1] is provided in a light-emitting unit, and has an optical coupling circuit element function including a light-receiving unit integrated in a vertical direction on the light-emitting unit.

  [5] In an optical device, an optical transmission element comprising the light-emitting thin film according to [1] above in a light-emitting portion, sharing the Si substrate, and connecting switching modulation elements integrated in a horizontal direction in series with the light-emitting portion It has a function.

  [6] An optical device is characterized in that the light emitting thin film according to the above [1] is provided in a light emitting portion and has a light-light conversion element function including a light receiving portion integrated in a vertical direction on the light emitting portion.

  [7] In an optical device, a display device function including the light-emitting thin film according to [1] above in a light-emitting portion, sharing the Si substrate, and connecting switching elements integrated in a horizontal direction in series to the light-emitting portion. It is characterized by having.

  According to the present invention, the following effects can be achieved.

  (1) It is possible to provide a display device that can exhibit an excellent display function with low cost and high reliability.

  (2) Since the drive circuit is monolithically formed on a single crystal Si semiconductor substrate, the display device, elements, and the drive circuit can be mounted on a single wafer at a high density, and is highly integrated and practical. A display device with high value can be provided.

[1] The light-emitting thin film of the present invention was obtained by sputtering EuSi ₂ together with Si on a Si substrate, and then performing an annealing treatment, and performing the treatment in an atmospheric gas to which oxygen was added during the sputtering or annealing. It is made of an aggregate of fine particles of ₃ SiO ₃ or Eu ₂ SiO ₄ .

[2] The light emitting device of the present invention, on the Si substrate, by sputtering EuSi ₂ with Si, then subjected to annealing treatment, Eu ₃ wherein the sputtering time or annealing which was treated in an atmospheric gas obtained by adding oxygen A light emitting thin film made of an aggregate of fine particles of SiO ₃ or Eu ₂ SiO ₄ and an ITO electrode formed on the light emitting thin film are provided.

  [3] An optical coupling element function including an optical device including the light-emitting thin film according to the above [1] in a light-emitting unit, a common Si substrate, and a light-receiving unit integrated in a horizontal direction through an optical waveguide. Have

  [4] The optical device has an optical coupling circuit element function including the light-emitting thin film according to the above [1] in a light-emitting unit and a light-receiving unit integrated in a vertical direction on the light-emitting unit.

  [5] In an optical device, an optical transmission element comprising the light-emitting thin film according to [1] above in a light-emitting portion, sharing the Si substrate, and connecting switching modulation elements integrated in a horizontal direction in series with the light-emitting portion It has a function.

  [6] The optical device has a light-to-light conversion element function including the light-emitting thin film according to the above [1] in a light-emitting unit and a light-receiving unit integrated in a vertical direction on the light-emitting unit.

  [7] In an optical device, a display device function including the light-emitting thin film according to [1] above in a light-emitting portion, sharing the Si substrate, and connecting switching elements integrated in a horizontal direction in series to the light-emitting portion. Have.

  Hereinafter, embodiments of the present invention will be described in detail.

  FIG. 1 is a configuration diagram of a light emitting device having a light emitting thin film according to a first embodiment of the present invention.

  First, before depositing the light-emitting thin film 2 on the Si substrate 1, the natural oxide film is removed, the interface resistance is lowered, and the voltage drop applied during current injection is minimized.

At this time, the natural oxide film is removed by permeating the Si substrate 1 into buffered NH ₄ F and diluted HF (1 to 10%) for 5 to 20 minutes. The Si substrate 1 on which the light-emitting thin film 2 is to be deposited is preferably as low resistance as possible, but here, a p-type substrate of 3 to 5 Ω · cm was used. The selection of p-type or n-type is determined by the type of electrode that will be deposited on the light-emitting thin film 2 in the future. Here, an ITO (Indium Tin Oxide) transparent electrode 3 is selected as an electrode to be deposited in the future, and since this is an n-type, the Si substrate 1 is selected as a p-type.

Immediately after removing the natural oxide film, a light-emitting thin film 2 is deposited on the Si substrate 1. Here, the radio frequency microwave sputtering method will be specifically described in detail, but the method of depositing the light emitting thin film 2 is not limited to this, and other various methods such as laser ablation method and electron beam evaporation are used. Is possible. Sputtering is performed by using a Si disk with a diameter of 100 mm as a sputtering target, and dispersing an amount of 109.9 mg of 99.9% EuSi ₂ powder on the Si disk uniformly in a circle with a diameter of about 50 mm. This was done by sputtering simultaneously with the Si disk. At this time, EuSi ₂ is not necessarily in the form of powder, and the effect described in the following examples can be obtained even when sintered like a normal sputtering target. In addition to EuSi ₂ , various rare earth metal silicide powders are mixed (for example, LaSi ₂ , CeSi ₂ , PrSi ₂ , NdSi ₂ , SmSi ₂ , GdSi ₂ , EuSi ₂ , TbSi ₂ , DySi ₂ , HoSi ₂ , (ErSi ₂ , TmSi ₂ , YbSi ₂ , LuSi ₂ , Cr ₃ Si, MnSi, etc.) Sputtering makes it possible to obtain white electroluminescence having a wider spectral width.

As sputtering conditions, RF power to be applied was 100 W and deposition temperature (Si substrate 1 temperature) was 300 ° C. in an Ar atmosphere gas (purity 99.999%) at a pressure of 0.5 Pa. The film thickness of the deposited EuSi ₂ was approximately 2 μm. According to the research results of the present inventors, the optimum film thickness is in the range of 0.05 μm to 10 μm. If it is thinner than this, the luminous efficiency is lowered, and if it is thicker than this, the resistance of the film is large, so that it becomes difficult for current to flow. Further, when a film is deposited by adding oxygen to the same extent as Ar gas at the time of sputtering, the luminance of electroluminescence obtained later can be further increased.

  However, here, sputtering was performed in an Ar atmosphere gas by adopting the simplicity of the manufacturing method. After the sputtering treatment, an annealing treatment was performed in a vacuum at 1000 ° C. for 15 minutes in order to reduce defects in the deposited film and at the interface. Again, the luminance of electroluminescence can be further increased by adding some oxygen during annealing. However, here, the annealing process was performed in a vacuum atmosphere in consideration of the simplicity of the manufacturing method and the reproducibility of the phenomenon.

When the luminescent thin film 2 thus produced is structurally diffracted by X-ray photoelectron spectroscopy and X-ray diffraction, the stoichiometry is Eu: 0.24, Si: 0.15, O: 0.61. A film is formed. It is considered that EuSiO ₃ and Eu ₂ SiO ₄ are formed as films having these stoichiometry.

Further, when structural analysis is performed by observation with a transmission electron microscope or the like, it is understood that the film subjected to such treatment is an aggregate of EuSiO ₃ or Eu ₂ SiO ₄ fine particles having an average particle diameter of 9 nm. Thus, even when sputtering and annealing are performed in the absence of oxygen, fine particles having a large specific surface area are formed, so that it is inevitably easy to adsorb atmospheric gas, and in particular, oxygen is easily taken up. For this reason, a considerable amount of oxygen is contained in the film. This oxygen has an effect of increasing the luminance of light emission. However, since oxygen is contained in a considerable amount even in the oxygen-free process, it is difficult to control the oxygen. For this reason, the inventors have omitted the description of the process of depositing and annealing the film by introducing oxygen.

In order to obtain electroluminescence from the EuSiO ₃ and Eu ₂ SiO ₄ films (hereinafter abbreviated as ESO films), which are the light-emitting thin films 2 produced in this way, the ITO transparent electrode 3 is about 100 nm in thickness by RF sputtering. Deposited on the luminescent thin film 2 in thickness. The structure of the optical device manufactured through the above process to obtain electroluminescence in this way is shown in FIG. In FIG. 1, 4 is an Al electrode, and E is a DC power source.

When a voltage is applied with the Al electrode 4 side of the Si substrate 1 of this optical device as the positive electrode and the ITO transparent electrode 3 side as the negative electrode, white light emission as shown in FIG. 2 is exhibited. In this figure, a is an ITO film (3) patterned like a fan as shown in FIG. 2, b is a Si substrate (1), and c is a bonding wire. When the luminance of this electroluminescence was measured with a luminance meter, a value of 130 Cd / m ² was shown at a bias voltage of 30V. The size of the light emitting layer at this time is about 5 mm ² and shows uniform surface light emission. The size of this surface emission is determined by the size of the ITO transparent electrode 3 to be deposited. When industrialization is taken into consideration, the size of the obtained device is determined here by the size of the Si substrate 1. At the present stage, those having a diameter of 30 to 40 cm can be used.

  In addition, since this method uses a sputtering method, the substrate on which the light-emitting thin film 2 is deposited can be made of quartz glass with ITO, which is used as a display material, in addition to Si. By using quartz glass with ITO, white surface light emission having an area of 250 cm × 250 cm or more can be obtained, which is a material suitable for a large area display. In order to increase the brightness and lower the threshold of the light emission voltage, it is necessary to optimize the parameters such as the oxygen amount during sputtering, the ratio of the sputtering amount of EuSi and Si, the thickness of the light emitting thin film 2, the annealing temperature, and the time. However, the conditions described above are not greatly exceeded.

  FIG. 3 shows an electroluminescence spectrum of the light-emitting device shown in FIG. In FIG. 3, the vertical axis indicates the EL intensity (relative unit), and the horizontal axis indicates the wavelength (nm).

  As shown in FIG. 3, the band of the emission spectrum covers almost the entire visible range of 400 to 800 nm. This broadband emission spectrum is thought to be due to the (4f) 6 (5d) → (4f) 7 transition of Eu divalent ions. Some sharp peaks indicated by arrows in the figure existing in this broad spectrum are considered to be due to Eu trivalent 5Dj → 7Fj ′ transition.

  As described above, the light-emitting thin film manufactured according to this example has a structure including most of the Eu valence but a little Eu valence. The quantum efficiency of light emission was recorded approximately 0.1% in this light emitting device. As for the improvement of the quantum efficiency, it is necessary to optimize the oxygen amount at the time of sputtering, the ratio of the sputtering amount of EuSi and Si, the thickness of the light emitting layer, the annealing temperature, the time, and the like as parameters. The conditions are not greatly exceeded.

FIG. 4 is a current-voltage characteristic diagram of this light-emitting device, in which the vertical axis represents current density J (mA / cm ² ) and the horizontal axis represents voltage (V). The non-resistance of this film can be evaluated in a region where the current is low (10 ⁻⁶ A / cm ² ), and the film has a high resistance of about 10 ¹⁰ Ω · cm. From this value, most of the light-emitting thin film produced here can be regarded as an insulator. When a current is injected into such an insulator, the current does not follow the normal diode characteristics [J = J ₀ exp (qV / nkT)], but the current is a function of the voltage 1-3 (J = kV ^a ) ( a is a space charge limited current that takes 1 to 3). As such a device that emits light in the form of a space charge limited current, organic electroluminescence that emits light by injecting current into an organic thin film having high resistance is well known.

FIG. 5 is a graph showing the light emission intensity with respect to the current of the light emitting device, where the vertical axis represents the EL intensity (relative unit) and the horizontal axis represents the current density J (mA / cm ² ). The rise of light emission is observed from a current density J of 0.4 mA / cm ² . Accordingly, from the current-voltage characteristics of FIG. 4, light emission starts from 5 to 6 V, and light emission is observed from a relatively low voltage regardless of the insulator. This is very suitable in modern electronics technology where 5V operation is the norm. From the graph of current and emission intensity, it can be seen that the intensity of electroluminescence is proportional to the square of the current. This indicates the fact that electrons and holes are injected from the electrodes on both sides to form an exciton state, and their energy is transferred to Eu ²⁺ or Eu ³⁺ , resulting in light emission. The fact that this electroluminescence does not emit light at all up to the reverse bias region of the voltage indicating a dielectric breakdown, but emits light only in the forward bias region, is the acceleration of carriers by the high electric field formed in the thin film and the electroluminescence. It shows the fact that carriers (electrons and holes) are injected into the light-emitting thin film as discussed above, rather than energy transfer by collision with the light-emitting center or the like.

  FIG. 6 is a diagram showing the time response characteristics of electroluminescence obtained from this light-emitting device. The vertical axis indicates the voltage (V), the vertical axis indicates the EL (relative unit), and the horizontal axis indicates the time (μs). is there. For modulation, a sine wave having a modulation frequency of 1 MHz, an amplitude of 27.5 V, and a steady bias of 20 V was used. With respect to the voltage waveform a to be modulated, the electroluminescence is modulated over the entire surface, and shows a modulation waveform b as shown in the lower part of FIG.

Thus, the light-emitting device according to the present invention can modulate electroluminescence even at a modulation frequency of 1 MHz. When a parallel signal is produced using the entire surface of the light-emitting device, 10 ¹² / s (terabits) or more. The signal processing having the number of bits can be performed. The modulation waveform b shown by electroluminescence causes some distortion with respect to the voltage waveform a to be modulated, because the fluorescence lifetimes of Eu ²⁺ and Eu ³⁺ have a relaxation time constant of about sub μs. . The relaxation time constants of Eu ²⁺ and Eu ³⁺ can be evaluated from the tail of the waveform at the time of voltage drop indicated by the modulation waveform b, and can be estimated to be approximately 0.5 μs.

The above-described method for manufacturing a light-emitting device is a light-emitting thin film and a light-emitting device manufactured using EuSi ₂ as a sputtering target, but is not limited to this, and can be applied to the following devices.

  Next, a second embodiment of the present invention will be described.

  FIG. 7 is a schematic configuration diagram of an optical coupling element showing a second embodiment of the present invention.

  As shown in FIG. 7, in this optical coupling element, a light emitting element and a light receiving element are monolithically formed on a substrate, and an optical waveguide as an optical transmission means for transmitting light emitted from the light emitting element to the light receiving element is provided. It is to be prepared. The light emitting element 11 is obtained by forming an ESO film 12 on a p-type single crystal Si substrate 10 and further forming a transparent electrode 13 made of ITO thereon. The light receiving element 14 is obtained by forming an amorphous SiC (silicon carbon) layer 15 containing an ESO film or n-type microcrystals on the surface of a p-type single crystal Si substrate 10. A transparent electrode 16 made of an ITO film is formed on the amorphous SiC layer 15, and an electrode 17 that is an Al layer is formed on the back surface of the p-type single crystal Si substrate 10. The optical waveguide is formed of barium borosilicate glass 19 on the transparent electrodes 13 and 16 and between the light emitting element 11 and the light receiving element 14. Reference numeral 18 denotes quartz glass.

  Next, a method for manufacturing the optical coupling element of this embodiment will be described.

  First, the ESO film 12 is formed according to the first embodiment. Thereafter, Al is vapor-deposited on the back surface of the p-type single crystal Si substrate 10 [crystal plane (100), resistivity 0.1 to 40 Ωcm] to form an ohmic contact, and an Al electrode 17 is formed.

  Next, when an amorphous SiC film is used for the light receiving element 14 instead of an ESO film, an amorphous SiC film 15 containing n-type microcrystals is deposited by electron cyclotron resonance plasma ECR-CVD. Let In such a case, a good film can be produced using the following conditions.

That is, gas pressure 0.001 to 0.008 Torr, input power 200 to 350 W, SiH ₄ : CH ₄ : PH ₃ : H ₂ = 1: 1 to 3: 0.005 to 0.03: 100 to 200, substrate temperature 150-350 ° C. As a result of investigation by the present inventors, if the gas pressure of the electron cyclotron resonance plasma CVD method is less than 0.001 Torr, the underlying Si substrate 10 is damaged by the etching effect. On the other hand, if it exceeds 0.008 Torr, the plasma is not stable, and the amorphous SiC layer 15 containing n-type microcrystals cannot be produced. Further, it has been found that when the substrate temperature is less than 150 ° C., the amorphous SiC layer 15 containing n-type microcrystals cannot be produced.

  Next, an ITO film is deposited using an electron beam vapor deposition apparatus, and then the ITO film between the light emitting element 11 and the light receiving element 14 is removed to form ITO transparent electrodes 13 and 16.

  Next, after forming the quartz glass 18 to a thickness of about 3 μm using a sputter deposition apparatus, patterning is performed so that a part of the ITO transparent electrodes 13 and 16 is exposed.

  Further, an optical waveguide is formed thereon by depositing barium borosilicate glass 19 to a thickness of about 1 μm using a sputter deposition apparatus. Here, in order to expose a part of the transparent electrodes 13 and 16, both ends of the barium borosilicate glass 19 are removed, but the light emitted from the light emitting element 11 can be efficiently taken into the optical waveguide, and the light receiving can be performed. It is necessary to pattern the barium borosilicate glass 19 so that light can be efficiently incident on the element 11.

  Finally, by grounding the Al electrode 17 and connecting the transparent electrodes 13 and 16 to a power source, the optical coupling element shown in FIG. 7 can be obtained. In FIG. 7, A is an ammeter and E is a DC power source.

  Next, the operation of the optical coupling element of this embodiment will be described.

When an electric signal is input to the light emitting element 11, the ESO film 12 emits light, and the light enters the optical waveguide. The refractive index n ₂ of the barium borosilicate glass 19 forming the optical waveguide is 1.53, which is larger than the refractive index n ₁ (= 1.659) of the quartz glass 18 and the refractive index n (= 1) of air. Therefore, the light can be totally reflected in the optical waveguide and transmitted to the light receiving element 14 side. When the light transmitted through the optical waveguide enters the amorphous SiC layer 15 containing the ESO film or the n-type microcrystal from the upper part of the light receiving element 14, the electromotive force caused by the incident light is received by the light receiving element 14. Occurs and the electrical signal is transferred.

  In this embodiment, the light emitting element 11 and the light receiving element 14 can be formed on the single crystal Si substrate 10.

  For this reason, it becomes possible to form this light emitting element 11 and the light receiving element 14 formed using Si on the monolithic Si substrate 10, and compared with the conventional optical coupling element manufactured using the compound semiconductor, It is possible to obtain an optical coupling element that has a simple structure, can be manufactured at low cost, and has a high degree of integration and high reliability.

  Therefore, the optical coupling element of this embodiment is suitable for use as a computer element or the like that requires high reliability and high-speed signal transfer.

For example, in the above embodiment, the case where an amorphous SiC film containing n-type microcrystals is used as the n-type semiconductor constituting the light receiving element has been described. However, the present invention is not limited to this. For example, a light receiving element can be realized in principle by using n-type amorphous SiC instead of an amorphous SiC film containing n-type microcrystals. In this case, since an ordinary PVCVD method may be used to form amorphous SiC, there is an advantage that the manufacturing method is easy. However, the band gap and conductivity of amorphous SiC are 10 ⁻⁵ S / cm at a band gap of 2.0 eV, which is higher than that of amorphous SiC film containing microcrystals. Since both the rates are low, there is a drawback that the light emission luminance is lowered.

  In the above embodiment, for example, an Au layer may be directly formed instead of the ITO film on the ESO film.

  Furthermore, in the above embodiments, each semiconductor constituting the optical coupling element may be formed using semiconductors having different conductivity types. In this case, when an n-type substrate is used to manufacture the optical coupling element, it is necessary to select a p-type film as the transparent electrode. For this, for example, a film such as GaN can be used.

  As described above, according to this example, the light emitting element is configured such that the ESO film is sandwiched between the p-type semiconductor and the n-type semiconductor, so that electrons and holes can easily enter the ESO film as the light emitting layer. Since a good light-emitting element can be obtained, the structure of the light-emitting element and the light-receiving element is monolithically formed on the substrate using Si, compared to the case of using a compound semiconductor as in the conventional structure. However, the manufacturing cost can be reduced, and the degree of integration can be increased and the reliability can be improved. Therefore, an optical coupling element suitable for use as a computer element or the like can be provided.

  Next, a third embodiment of the present invention will be described.

  FIG. 8 is a schematic configuration diagram of an optical coupling circuit element showing a third embodiment of the present invention.

  As shown in FIG. 8, the optical coupling circuit element 21 of this embodiment includes a p-type single crystal Si substrate 24 in which an optical transmission element 22 that transmits an optical signal by an ESO film 23 is incorporated, and light from the optical transmission element 22. A substrate 25 incorporating a light receiving element 26 for receiving a signal is joined with the light transmitting element 22 and the light receiving element 26 facing each other.

The optical transmission element 22 includes an ESO film 23 formed on a p-type single crystal Si substrate 24, a lower ITO film 28 formed on the ESO film 23, and the lower ITO film 28 and the p-type single crystal Si substrate. A SiO ₂ film 29 is formed as a transparent insulating film over the exposed portion of one surface.

The light receiving element 26 is composed of an amorphous SiC layer 30 containing ESO or n-type microcrystals formed on the lower surface of the other single crystal Si substrate 25, and the n-μC-SiC 30 and the lower surface of the substrate 25. An upper ITO film 31 is formed on a part, and an SiO ₂ film 32 as a transparent insulating film is formed over the upper ITO film 31 and an exposed portion of the lower surface of the substrate 25.

As shown in FIG. 8, the optical transmission element 22 and the light receiving element 26 are bonded to each other through SiO ₂ films 29 and 32, and the SiO ₂ films 29 and 32 are integrally formed by a transparent adhesive 33. It is joined. In FIG. 8, 34 is an Al electrode provided on the other surface of the p-type single crystal Si substrate 24, and 35 is an Al electrode provided on the other surface of the substrate 25.

  Next, the manufacturing process of the above-described optical coupling circuit element will be described with reference to FIG.

  (1) First, as shown in FIG. 9A, an ESO film 23 is formed on the p-type single crystal Si substrate 24 according to the above embodiment. Thereafter, Al is vapor-deposited on the back surface of the p-type single crystal Si substrate 24 to form an ohmic contact, and an Al electrode 34 is formed.

Next, a lower ITO film 28 is formed on the ESO film 23 and patterned. Then, an SiO ₂ film 29 as a transparent insulating film is formed by plasma CVD or sputtering over the lower ITO film 28 and an exposed portion of one surface of the single crystal Si substrate 24, and patterning is performed to transmit light. The manufacture on the element 22 side is completed.

(2) Next, as shown in FIG. 9B, an amorphous SiC layer 30 containing an ESO film or n-type microcrystals is formed on the lower surface of the substrate 25 made of single crystal Si provided with the Al electrode 35. The upper ITO film 31 is formed on part of the lower surface of the amorphous SiC layer 30 containing n-type microcrystals and the substrate 25 and patterned. Further, the SiO ₂ film 32 as a transparent insulating film is formed by plasma CVD or sputtering over the upper ITO film 31 and the exposed portion of the lower surface of the substrate 25, and is patterned to produce the light receiving element 26 side. Is completed.

(3) After forming the elements on the optical transmitting element 22 side and the light receiving element 26 side in this way, as shown in FIG. 9C, the SiO ₂ film 29 on the optical transmitting element 22 side, the light receiving element 26 The optical coupling circuit element 21 shown in FIG. 8 can be obtained by superimposing the side SiO ₂ films 32 and filling these end regions with a transparent adhesive 33.

  FIG. 10 shows a configuration for performing a light emission test of the optical coupling circuit element 21. The Al electrode 34 of the optical transmission element 22 is grounded, the pulse oscillator 36 is connected to the lower ITO film 28, and the light receiving element 26 side is also shown. The Al electrode 35 is grounded, and an ammeter 37 and a DC power source E are connected to the upper ITO film 31 on the light receiving element 26 side.

  With such a circuit configuration, when a pulse voltage having an amplitude of −10 V is applied to the optical transmission element 22 by the pulse oscillator 36, light is transmitted from the optical transmission element 22 toward the light reception element 26 and connected to the light reception element 26. It was confirmed that the current having the waveform shown in FIG.

  According to the optical coupling circuit element 21 configured as described above, the p-type single crystal Si substrate 24 is cheaper and has higher physical reliability than a substrate using a compound semiconductor. Therefore, the ESO film 23 is used. Thus, the optical transmission element 22 having the above-described structure can be easily incorporated. Therefore, the optical coupling circuit element 21 has low cost and good reliability.

  Further, since the ESO film 23 is used as the optical transmission element 22, a simple and excellent optical signal transmission function can be exhibited.

  As described above, according to the third embodiment, it is possible to provide an optical coupling circuit element capable of exhibiting an excellent optical transmission function with low cost, high reliability, and capable of meeting the demand for a multiprocessor architecture.

  Next, a fourth embodiment of the present invention will be described.

  FIG. 12 is a schematic configuration diagram of an optical transmission element according to the fourth embodiment of the present invention.

  As shown in FIG. 12, the optical transmission element 41 includes an optical transmission unit 44 using an ESO film 43 on a p-type single crystal Si substrate 42, and an optical signal transmitted from the optical transmission unit 44 as an input electrical signal. A switching modulation element 45 composed of an FET 48 that modulates in response to a signal is formed.

  The optical transmitter 44 includes an ESO film 43 formed on one end side of the p-type single crystal Si substrate 42 and an ITO film 47 formed on the ESO film 43. The switching modulation element 45 is configured by an FET 48 formed in a laminated structure on a p-type single crystal Si substrate 42.

  Next, the manufacturing process of the optical transmission element 41 of the present embodiment will be described with reference to FIGS.

(1) First, as shown in FIG. 13A, an Al (or Au) layer 42a is vapor-deposited on one surface, and a p-type single crystal Si substrate 42 in ohmic contact is prepared, and this p-type single crystal Si is prepared. An SiO ₂ film 51 as an insulating layer is formed on the other surface of the substrate 42 by any one of plasma CVD, sputtering, and thermal oxidation. Next, after patterning the SiO ₂ film 51, a pair of n ⁺ layers 52, 53 are formed on the p-type single crystal Si substrate 42 by ion implantation or diffusion, and the pair is formed through the SiO ₂ film 51. An internal electrode layer 54 made of Al, Cr, ITO or the like that contacts the n ⁺ layers 52 and 53 is formed.

(2) Next, as shown in FIG. 13B, the internal electrode layer 54 is patterned and the source electrode 55, the drain electrode 56 and the SiO ₂ film 51 which are in contact with the pair of n ⁺ layers 52 and 53 are formed. The gate electrode 57 is formed.

(3) Next, as shown in FIG. 13C, the SiO ₂ film 51 is patterned, and an SiO ₂ film (or Si ₃ N ₄ film) 58 as an insulating layer is formed by plasma CVD or sputtering to form a source electrode. 55, a drain electrode 56, and a gate electrode 57 are deposited and patterned. An ESO film 43 is formed in the same manner as in the above embodiment next to the above-described switching modulation element 45 forming region on the single crystal Si substrate 42. At this time, the annealing temperature of the ESO film 43 is lowered to 600 ° C. or lower so that the performance of the switching modulation element 45 is not lost. Further, depending on the deposition method of the ESO film 43, many lattice defects or the like are generated in the ESO film 43, and the annealing temperature needs to be raised to 1000 ° C. or more. In that case, the ESO film 43 is formed. It is also possible to bring the annealing process to the previous stage of the manufacturing process of the switching modulation element 45.

  (4) Next, as shown in FIG. 13 (d), an ITO film 47 is formed on the ESO film 43 and patterned to form an optical transmitter 44.

Further, the SiO ₂ film 58 is patterned again to the source electrode 55 to the SiO ₂ film 58, the drain electrode 56, after drilling to the upper surface of the gate electrode 57, the metal electrode 60 in contact with the source electrode 55, A metal electrode 61 in contact with the drain electrode 56 and a metal electrode 62 in contact with the gate electrode 57 are formed. The metal electrode 61 in contact with the drain electrode 56 is also in contact with the ITO film 47.

  Further, by connecting the anode of the power source (DC power source) E to the Al layer 42a of the p-type single crystal Si substrate 42 and grounding the metal electrode 60 in contact with the source electrode 55, the optical transmission shown in FIG. The element 41 can be obtained.

  An equivalent circuit of the optical transmission element 41 is shown in FIG.

  In the optical transmission element 41 of the present invention, the optical transmission unit emits light when a signal more than turning on the FET is input to the input.

  The optical transmission element 41 of this embodiment has an optical transmission unit 44 using an ESO film 43 on a single p-type single crystal Si substrate 42, and an optical signal transmitted from the optical transmission unit 44 as an input electrical signal. A switching modulation element 45 that modulates accordingly is formed. The single crystal Si substrate 42 made of p-type single crystal Si is lower in cost and higher in physical reliability than a substrate using a compound semiconductor such as GaAs, so that the optical transmitter 44 using the ESO film 43 is used. And a switching modulation element 45 that modulates the optical transmission unit 44 and is controlled to be turned on / off by an input signal 49 can be easily incorporated by a conventional semiconductor manufacturing process. Therefore, the optical transmission element 41 of this embodiment is Low cost and good reliability.

  In addition, since the ESO film 43 is used as the optical transmitter 44, a simple and excellent optical transmission function can be exhibited.

  Further, since the switching modulation element 45 and the optical transmission unit 44 are monolithically formed on the p-type single crystal Si substrate 42, the optical transmission unit 44 and the switching modulation element 45 as pixels are formed on a single wafer. It can be mounted at a high density and can be highly integrated.

  Next, a more practical optical transmission element 41A configured by developing a large number of optical transmission elements 41 in a matrix will be described with reference to FIGS.

  The optical transmission element 41A shown in FIG. 15 and FIG. 16 has a configuration in which the optical transmission units 44 of the plurality of optical transmission elements 41 are arranged on a single p-type single crystal Si substrate.

  Then, as shown in FIG. 17, the input signal is sent to each switching modulation element 45 for each optical transmission unit 44, 1, 1, 1, 0, 1, 0, 0, 1, 0. 1, 0, 1, 0 (the threshold voltage at which the FET 45 is turned on is 1 and the others are 0), and the modulated optical signals are received from the optical transmitters 44 by being supplied as voltage signals. The optical multiplex transmission sent in parallel to each light receiving element 71 of the unit 70 becomes possible.

  Since it comprised in this way, according to this 4th Example, there can exist the following effects.

  (1) It is possible to provide an optical transmission element capable of exhibiting an excellent optical transmission function with low cost and high reliability.

  (2) Since the modulation element is monolithically formed on the p-type single crystal Si semiconductor substrate, the light transmission part and the modulation element can be mounted on a single wafer with high density, and the degree of integration Therefore, it is possible to provide an optical transmission element having a high practical value.

  Next, a fifth embodiment of the present invention will be described.

  FIG. 18 is a schematic configuration diagram of a first light-to-light converting element showing a fifth embodiment of the present invention, FIG. 19 is a band diagram when no bias is applied to the light-to-light converting element, and FIG. -It is a band figure when a bias is applied to the light conversion element and the light is irradiated.

As shown in FIG. 18, this light-light conversion element is obtained by integrating a photodiode 82, which is a light receiving element, and a light emitting element 84 in the vertical direction. The photodiode 82 is formed by forming an n ⁺ type single crystal Si layer 94 on the back surface of a p type single crystal Si substrate 92 and forming a pn junction. An Al electrode 86 a is formed on the n ⁺ type single crystal Si layer 94. In the light emitting element 84, an ESO layer 96 is formed on the surface of a p-type single crystal Si substrate 92, and a transparent electrode 86b is formed thereon with an ITO film. FIG. 19 shows a band diagram when no bias is applied to the light-light conversion element.

  Next, a manufacturing method of the light-light conversion element shown in FIG. 18 will be described.

An n ⁺ -type single crystal Si layer 94 is formed on the back surface of the ESO / Si fabricated according to the above embodiment. This n ⁺ -type single crystal Si layer 94 is formed using an ion implantation method or a diffusion method. Then, Al is vapor-deposited on the n ⁺ type single crystal Si layer 94 to make ohmic contact, and an Al electrode 86a is formed.

  Finally, by using an electron beam evaporation apparatus, an ITO film is deposited on the ESO film 96 to form the transparent electrode 86b, whereby the light-light conversion element shown in FIG. 18 can be obtained.

  Next, the operation of the first light-light conversion element will be described.

As shown in FIG. 20, when a voltage is applied to the light-light conversion element, the photodiode 82 is in a reverse bias state, and the light emitting element 84 is in a forward bias state. When light enters from the photodiode 82 side, a pair of electrons and holes is photoexcited and generated on the p-type single crystal Si substrate 92. Among these carriers, electrons move to the n ⁺ type single crystal Si layer 94 and holes move to the ESO film 96. Further, since a forward bias is applied to the light emitting element 84, electrons are injected into the ESO film 96 from the n-type ITO film, so that electrons and holes are recombined in the ESO film 96 and light is emitted. The

Since the energy gap of single crystal Si is 1.12 eV, this light-to-light conversion element can sense even near-infrared light having a wavelength of 1.1 μm. Moreover, since the ESO film 96 emits white light having a wavelength of 400 to 800 nm, this light-light conversion element can emit infrared light by making infrared light incident thereon. When no light is incident from the photodiode 82 side, the n ⁺ type single crystal Si layer 94 and the p type single crystal Si substrate 92 are in a reverse bias state, so that holes are not injected into the ESO film 96, and thus light emission. do not do.

  By integrating the light emitting element and the light receiving element formed using Si in the vertical direction, the light-to-light conversion element can be made entirely of Si, so that the conventional one manufactured using a compound semiconductor is used. In comparison, there are advantages that the structure is simple, the manufacturing cost is low, the reliability can be improved, and even a large area having a width of 12 inches or more can be produced. Therefore, the first light-to-light conversion element is suitable for use as an optical computer element, a wavelength conversion element, or the like.

  Next, a second light-to-light conversion element according to a fifth embodiment of the present invention will be described with reference to the drawings. FIG. 21 is a schematic configuration diagram of a second light-to-light conversion element according to the fifth embodiment of the present invention, FIG. 22 is a band diagram when no bias is applied to the light-to-light conversion element, and FIG. FIG. 24 is a band diagram when a bias is applied to the light-to-light conversion element and light is irradiated.

The second light-light conversion element is different from the first light-light conversion element in that a phototransistor 82a is used as a light receiving element. The phototransistor 82 a has a pnp structure in which an n-type single crystal Si layer 99 and a p ⁺ -type single crystal Si layer 100 are formed under a p-type single crystal Si substrate 92. Other configurations are the same as those of the first light-to-light conversion element, and the same components as those of the first light-to-light conversion element are denoted by the same reference numerals, and detailed description thereof is omitted.

  FIG. 22 shows a band diagram when no bias is applied to the second light-light conversion element.

  To fabricate the second light-to-light conversion element, an n-type single crystal Si layer 99 is formed by epitaxial growth on the back surface of the ESO / Si p-type single crystal Si substrate 92 prepared in the above embodiment.

Then, the p ⁺ -type single crystal Si layer 100 is formed on the n-type single crystal Si layer 99 by a diffusion method or an ion implantation method, thereby forming a phototransistor 82a. Further, Al is vapor-deposited on the p ⁺ type single crystal Si layer 100 to make ohmic contact, and an Al electrode 86a is formed.

  Finally, a transparent electrode 86b is formed of an ITO film on the ESO film 96, and the light-light conversion element shown in FIG. 21 can be obtained.

  Next, the operation of the second light-light conversion element will be described.

First, as shown in FIG. 23, when a voltage is applied to the light-to-light conversion element, the p ⁺ type single crystal Si layer 100 and the n type single crystal Si layer 99 of the phototransistor 82a are in a forward bias state, and the n type single crystal Si layer 99 and p-type single crystal Si substrate 92 are in a reverse bias state. In addition, the light emitting element 84 is in a forward bias state. At this time, in the phototransistor 82a, the voltage is mainly applied between the n-type single crystal Si layer 99 and the p-type single crystal Si substrate 92, so that the holes in the p ⁺ -type single crystal Si layer 100 are p-type single crystal. It is not implanted into the crystalline Si substrate 92.

When light is incident from the phototransistor 82a side, the light is absorbed by the p-type single crystal Si substrate 92 as shown in FIG. 24, and a pair of electrons and holes is generated. Among these carriers, electrons move to the n-type single crystal Si layer 99 and accumulate there. Therefore, p ⁺ type single crystal Si layer 100 and n type single crystal Si layer 99 are in a forward bias state, and the barrier against holes between p ⁺ type single crystal Si layer 100 and n type single crystal Si layer 99 is small. Become. Therefore, the holes in the p ⁺ type single crystal Si layer 100 pass through the n type single crystal Si layer 99 and the p type single crystal Si substrate 92, and together with the holes generated in the p type single crystal Si substrate 92, ESO Move to membrane 96. Since electrons are injected from the ITO film 86b into the ESO film 96, recombination of electrons and holes occurs in the ESO film 96, and visible light is emitted.

  In the second light-to-light conversion element, the phototransistor is used as the light receiving element, so that the response speed is slower than in the case of using the photodiode, but the light can be amplified and the emission luminance can be increased. Other effects are the same as those of the first light-light conversion element.

  In each of the above embodiments, for example, an Au layer may be directly formed instead of the ITO film. FIG. 25 shows a schematic configuration diagram of the light-to-light conversion element, and FIG. 26 shows a band diagram when the light-to-light conversion element is biased and irradiated with light. Note that the same portions as those in FIG. 18 are denoted by the same reference numerals and description thereof is omitted, but in this case as well, the structure is very simple, but there is a drawback that the light emission luminance is reduced.

  As described above, according to the fifth embodiment, since the light emitting element is configured such that the ESO film is sandwiched between the p-type semiconductor and the n-type semiconductor, electrons and holes can easily enter the ESO film as the light emitting layer. Since a good light emitting device can be obtained, the manufacturing cost can be reduced by integrating the light emitting device and the light receiving device in the vertical direction using Si, compared with the case where the compound semiconductor is conventionally used. Reliability can be increased, and even a large area can be produced.

  Therefore, a light-light conversion element suitable for use as an optical computer element, a wavelength conversion element, or the like can be provided.

  Next, a sixth embodiment of the present invention will be described in detail.

  FIG. 27 is a sectional view of a display device showing a sixth embodiment of the present invention.

  As shown in this figure, in this display device 101, a light emitting element 104 having a structure using an ESO film 103 and a switch element 105 for selecting the light emitting element 104 are formed on a p-type single crystal Si substrate 102. It is a thing. The light emitting element 104 includes an ESO film 103 formed on one end side of the p-type single crystal Si substrate 102 and an ITO film 107 formed on the ESO film 103. The switch element 105 is constituted by a transistor 108 formed in a laminated structure on a single crystal Si substrate 102.

  Next, a manufacturing process of the display device 101 will be described with reference to FIG.

(1) First, as shown in FIG. 28 (a), a p-type single crystal Si substrate 102 prepared by vapor-depositing Al (or Au) 102a on one surface and in ohmic contact is prepared, and this p-type single crystal Si substrate 102 is prepared. An SiO ₂ film 111 as an insulating layer is formed on the other surface by any one of plasma CVD, sputtering, and thermal oxidation. Next, after patterning the SiO ₂ film 111, a pair of n ⁺ layers 112 and 113 are formed on the p-type single crystal Si substrate 102 by ion implantation or diffusion, and the pair is formed through the SiO ₂ film 111. An internal electrode layer 114 made of Al, Cr, ITO or the like that contacts the n ⁺ layers 112 and 113 is formed.

(2) Next, as shown in FIG. 28B, the internal electrode layer 114 is patterned, and the source electrode 115, the drain electrode 116 and the SiO ₂ film 111 in contact with the pair of n ⁺ layers 112 and 113 are patterned. The upper gate electrode 117 is formed.

(3) Next, as shown in FIG. 28C, the SiO ₂ film 111 is patterned, and the SiO ₂ film (or Si ₃ N ₄ film) 118 as an insulating layer is formed as a source electrode by plasma CVD or sputtering. 115, the drain electrode 116, and the gate electrode 117 are deposited and patterned. Next, an ESO film 103 is formed next to the above-described formation region of the switch element 105 on the single crystal Si substrate 102. At this time, the annealing temperature of the ESO film 103 is lowered to 600 ° C. or less so as not to lose the performance of the switch element 105. Further, depending on the deposition method of the ESO film 103, many lattice defects or the like are generated in the ESO film 103, and the annealing temperature needs to be raised to 1000 ° C. or more. In this case, the ESO film 103 is formed. It is also possible to bring the annealing process to the previous stage of the manufacturing process of the switch element 105.

(4) Next, as shown in FIG. 28D, an ITO film 107 is formed on the ESO film 103 and patterned to form the light emitting element 104. Furthermore, the SiO ₂ film 118 is patterned again, and the drain electrode 116 and the gate electrode 117 are punched on the SiO ₂ film 118, and then the metal electrode 121 and the gate electrode 117 that are in contact with the drain electrode 116 are formed. A metal electrode 122 to be in contact is formed. The metal electrode 121 in contact with the drain electrode 116 is also in contact with the ITO film 107.

  With such a manufacturing method, the display device 101 in which the light-emitting element 104 and the transistor 108 illustrated in FIG. 27 are formed in one pixel can be obtained. An equivalent circuit of the display device 101 is shown in FIG.

  In the display device 101 of this embodiment, a light emitting element 104 having a structure using an ESO film 103 and a switch element 105 for selecting the light emitting element 104 are formed on a single single crystal Si substrate 102. . The p-type single crystal Si substrate 102 made of single crystal Si is lower in cost and higher in physical reliability than a substrate using a compound semiconductor. Therefore, the light emitting element 104 having a structure using the ESO film 103 and this The switch element 105 for selecting the light emitting element 104 can be easily incorporated by a conventional semiconductor manufacturing process.

  Therefore, the display device 101 of this embodiment has low cost and good reliability.

  In addition, since an ESO film is used as the light emitting element, a simple and excellent display function can be exhibited.

  Furthermore, since the drive circuit can be formed monolithically with the display device on the single crystal Si substrate, the display device and its switch elements can be mounted on a single wafer with high density.

  Next, a more practical display device 101A configured by developing a large number of the display devices 101 described above in a matrix will be described with reference to FIGS. 30, 31, and 32. FIG.

  The display device 101A equivalently shown in FIG. 30 is configured in a matrix of 480 rows × 480 columns using the light emitting elements 104 shown in FIGS. 28 and 29 as unit pixels.

  Then, each source electrode 215 of the selection element 205 for selecting each light emitting element 204 is connected to data lines..., J−1, j, j + 1,... Arranged in the column direction, and each gate electrode 222 is arranged in the row direction. .., I−1, i, i + 1,...

  In the display device 101A having such a configuration, when 60 images are to be displayed in one minute, the gate lines..., I−1, i, i + 1,. / 60) × (1/480) = 34 μsec pulses may be sent sequentially. For data, since it is necessary to add data to each pixel 1, 2,..., J−1, j, j + 1,... For 34 μsec, a pulse of 34 μsec / 480 = 71 nsec is applied to the data line. It may be sent sequentially to j-1, j, j + 1,. In this case, it is possible to store one line in the memory and send one line at a time.

  Further, light emission control of each light emitting element 204 is performed as follows.

  For example, in order to clarify the light emitting element 204 of (i, j), a gate pulse may be simultaneously input to i and a data pulse may be simultaneously input to j. When a gate pulse is sent to the gate line i-1 and a data line is sent to the data lines 1, 3,..., J, j + 2,..., (I-1, 1) as shown in FIG. , (I−1, 3),..., (I−1, j), (i−1, j + 2),... Emit light, and the light emitting elements 204 between them emit no light.

  33 shows a vertical shift register 332 for the gate lines..., I-1, i, i + 1,... Of the display device 101A having the above-described configuration, and a horizontal line for the data lines ..., j-1, j, j + 1,. A display device 101B incorporating a shift register 331 is shown.

  34 shows a vertical shift register 332 for the gate lines..., I-1, i, i + 1,... Of the display device 101A having the described configuration, and for the data lines ..., j-1, j, j + 1,. A display device 101C incorporating a memory 333 is shown.

  In the case of such display devices 101B and 101C, the drive circuits (vertical shift register 332, horizontal shift register 331, and memory 333) may be externally connected and connected by wire bonding instead of on one wafer. It is more advantageous to improve the degree of integration by incorporating it monolithically.

  In addition, this invention is not limited to the said Example, Based on the meaning of this invention, a various deformation | transformation is possible and these are not excluded from the scope of the present invention.

  The light-emitting thin film and the optical device of the present invention can be used for optical communication, self-luminous display devices, optical integrated circuits, light-emitting sources, and the like.

It is a block diagram of the light emitting element which has a light emitting thin film which shows 1st Example of this invention. It is a figure which shows the light emission state of the light emitting element which has a light emitting thin film which shows 1st Example of this invention. It is a spectrum figure of the electroluminescence of the light emitting element which has a light emitting thin film which shows 1st Example of this invention. It is a current-voltage characteristic view of the light emitting element having the light emitting thin film showing the first embodiment of the present invention. It is a figure which shows the emitted light intensity with respect to the electric current of the light emitting element which shows 1st Example of this invention. It is a figure which shows the time response characteristic of the electroluminescence obtained from the light emitting element which shows 1st Example of this invention. It is a schematic block diagram of the optical coupling element which shows 2nd Example of this invention. It is a schematic block diagram of the optical coupling circuit element which shows 3rd Example of this invention. It is manufacturing process sectional drawing of the optical coupling circuit element which shows 3rd Example of this invention. It is a block diagram which performs the light emission test of the optical coupling circuit element which shows 3rd Example of this invention. It is a figure which shows the waveform of the operating current of the optical coupling circuit element which shows 3rd Example of this invention. It is a schematic block diagram of the optical transmission element which shows 4th Example of this invention. It is manufacturing process sectional drawing of the optical transmission element which shows 4th Example of this invention. It is an equivalent circuit diagram of the optical transmission element showing the fourth embodiment of the present invention. FIG. 10 is a circuit diagram in which a large number of optical transmission elements according to a fourth embodiment of the present invention are developed in a matrix. It is a figure which shows the state which arranged each optical transmission part of the several optical transmission element which shows 4th Example of this invention on the single-crystal Si substrate. It is a figure which shows the input signal to each switching modulation element with respect to the optical transmission part of the optical transmission element which shows 4th Example of this invention. It is a schematic block diagram of the 1st light-light converting element which shows 5th Example of this invention. It is a band figure when the bias is not added to the 1st light-light converting element which shows 5th Example of this invention. It is a band figure when a bias is applied to the first light-light converting element showing the fifth embodiment of the present invention and the light is irradiated. It is a schematic block diagram of the 2nd light-light conversion element which shows 5th Example of this invention. It is a band figure in case the bias is not added to the 2nd light-light conversion element which shows 5th Example of this invention. It is a band figure at the time of adding a bias to the 2nd light-light converting element which shows 5th Example of this invention. It is a band figure at the time of applying a bias and irradiating light to the 2nd light-light converting element which shows 5th Example of this invention. It is a schematic block diagram of the light-light conversion element at the time of forming Au layer directly instead of the ITO film | membrane of the light-light conversion element of this invention. It is a band figure at the time of applying a bias and irradiating light to the light-light converting element shown in FIG. It is sectional drawing of the display apparatus which shows 6th Example of this invention. It is manufacturing process sectional drawing of the display apparatus which shows 6th Example of this invention. It is the equivalent circuit schematic of the display apparatus which shows 6th Example of this invention. It is a figure which shows the display apparatus comprised by expand | deploying many display apparatuses which show 6th Example of this invention in matrix form. It is a figure which shows the pulse (the 1) applied to the gate of the display apparatus shown in FIG. It is a figure which shows the pulse (the 2) applied to the gate of the display apparatus shown in FIG. FIG. 31 is a diagram showing a display device in which a vertical shift register is incorporated in the gate line of the display device shown in FIG. 30 and a horizontal shift register is incorporated in the data line. FIG. 31 is a diagram showing a display device in which a vertical shift register is incorporated in a gate line of the display device shown in FIG. 30 and a memory is incorporated in a data line.

Explanation of symbols

1, 25 Si substrate 2 Light emitting thin film 3, 13, 16, 86b ITO transparent electrode 4, 17, 34, 35, 86a Al electrode E DC power supply 10, 24, 42, 92, 100, 102 p-type single crystal Si substrate 11 , 84, 104, 204 Light-emitting element 12, 23, 43, 96, 103 ESO film 14, 26, 71 Light-receiving element 15, 30 Amorphous SiC layer containing ESO film or n-type microcrystals 18 Quartz glass 19 Barium Borosilicate glass 21 Optical coupling circuit element 22, 41, 41A Optical transmission element 28 Lower ITO film 29, 32, 51, 111, 118 SiO ₂ film 31 Upper ITO film 33 Transparent adhesive 36 Pulse oscillator 37 Ammeter 42a, 102a Al (or Au) layer 44 Optical transmitter 45 Switching modulation element 47, 107 ITO film 48 FET
49 Input signal 52, 53 n ⁺ layer 54, 114 Internal electrode layer 55, 115, 215 Source electrode 56, 116 Drain electrode 57, 117, 222 Gate electrode 58 SiO ₂ film (or Si ₃ N ₄ film)
60, 61, 62, 121, 122 Metal electrode 70 Photodetector 82 Photodiode 82a Phototransistor 94 n ⁺ type single crystal Si layer 99 n type single crystal Si layer 101, 101A, 101B, 101C Display device 105 Switch element 108 Transistor 112, 113 n ⁺ layer 205 selection element 331 horizontal shift register 332 vertical shift register 333 memory

Claims (7)

On the Si substrate, EuSi ₂ is sputtered together with Si, and then subjected to an annealing treatment. At the time of the sputtering or annealing, Eu ₃ SiO ₃ or Eu ₂ SiO ₄ fine particles treated in an atmosphere gas to which oxygen is added. A light-emitting thin film comprising an aggregate. On the Si substrate, EuSi ₂ is sputtered together with Si, and then subjected to an annealing treatment. At the time of the sputtering or annealing, Eu ₃ SiO ₃ or Eu ₂ SiO ₄ fine particles treated in an atmosphere gas to which oxygen is added. An optical device comprising: a light-emitting thin film comprising an aggregate; and an ITO electrode formed on the light-emitting thin film.   A light having a light coupling part function comprising: the light-emitting thin film according to claim 1 provided in a light-emitting part, the light-receiving part integrated with the Si substrate in a horizontal direction through an optical waveguide. device.   An optical device comprising an optical coupling circuit element function comprising the light-emitting thin film according to claim 1 in a light-emitting portion and a light-receiving portion integrated in a direction perpendicular to the light-emitting portion.   The light-emitting thin film according to claim 1 is provided in a light-emitting part, and has a light-transmitting element function for connecting the Si substrate in common and connecting switching modulators integrated in a horizontal direction in series with the light-emitting part. Optical device.   An optical device having a light-to-light conversion element function, comprising the light-emitting thin film according to claim 1 in a light-emitting part, and a light-receiving part integrated in a direction perpendicular to the light-emitting part.   An optical device comprising: the light-emitting thin film according to claim 1 in a light-emitting portion; and a display device function for connecting the Si substrate in common and connecting switching elements integrated in a horizontal direction in series to the light-emitting portion. .

Images