JP2005175021A5 - - Google Patents
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- JP2005175021A5 JP2005175021A5 JP2003409659A JP2003409659A JP2005175021A5 JP 2005175021 A5 JP2005175021 A5 JP 2005175021A5 JP 2003409659 A JP2003409659 A JP 2003409659A JP 2003409659 A JP2003409659 A JP 2003409659A JP 2005175021 A5 JP2005175021 A5 JP 2005175021A5
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- JP
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- Prior art keywords
- semiconductor
- wavelength
- light source
- current value
- optical
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Claims (6)
前記半導体ＤＦＢレーザ素子の発振波長は、前記波長検出器の検出信号に基づき、前記第１の制御部により供給される駆動電流により制御され、
前記半導体光増幅器から出力される光強度は、前記光出力検出器の検出信号に基づき、前記第２の制御部により供給される駆動電流により制御され、
前記発振波長と前記光強度が独立に制御されることを特徴とする波長可変光源。 And tunable semiconductor body D F B les over laser device, a first control unit connected to the semiconductor DFB laser device, a semiconductor optical amplifier, and a second control unit connected to the semiconductor optical amplifier the provided optical coupling unit semiconductor DFB laser element and the said semiconductor optical amplifier is optically coupled, said arranged on the emission side of the semiconductor optical amplifier, a wavelength detector and optical output detector, a,
The oscillation wavelength of the semiconductor DFB laser element is controlled by a drive current supplied by the first controller based on the detection signal of the wavelength detector ,
The light intensity output from the semiconductor optical amplifier is controlled by a drive current supplied by the second controller based on the detection signal of the optical output detector ,
Variable wavelength light source, wherein the light intensity and the oscillation wavelength is controlled independently.
発振波長に対応した駆動電流値をステップ状に変化させて前記半導体ＤＦＢレーザへ駆動電流値を供給するスイッチング手段と、を備え、
前記メモリに記憶された駆動電流値に基づいて発振波長の切替を実行することを特徴とする請求項１に記載の波長可変光源。 A memory for storing a drive current value corresponding to the oscillation wavelength of the semiconductor DFB laser element;
Switching means for supplying a driving current value to the semiconductor DFB laser by changing the driving current value corresponding to the oscillation wavelength in a stepwise manner;
The wavelength tunable light source according to claim 1, wherein the oscillation wavelength is switched based on a drive current value stored in the memory.
前記駆動電流値を各波長毎に記憶する回路をさらに備えることを特徴とする請求項３に記載の波長可変光源。 Each of the N DFB lasers constituting the semiconductor laser array has its drive current value adjusted in advance so that the oscillation wavelengths adjacent to each other have a predetermined interval,
The wavelength tunable light source according to claim 3, further comprising a circuit that stores the drive current value for each wavelength .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003409659A JP4290541B2 (en) | 2003-12-08 | 2003-12-08 | Tunable light source and optical transmitter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003409659A JP4290541B2 (en) | 2003-12-08 | 2003-12-08 | Tunable light source and optical transmitter |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005175021A JP2005175021A (en) | 2005-06-30 |
| JP2005175021A5 true JP2005175021A5 (en) | 2006-06-01 |
| JP4290541B2 JP4290541B2 (en) | 2009-07-08 |
Family
ID=34730947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003409659A Expired - Lifetime JP4290541B2 (en) | 2003-12-08 | 2003-12-08 | Tunable light source and optical transmitter |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4290541B2 (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4771784B2 (en) * | 2005-10-25 | 2011-09-14 | 日本電信電話株式会社 | Optical transmitter and optical transmission method |
| KR100753818B1 (en) | 2005-12-09 | 2007-08-31 | 한국전자통신연구원 | High power planar lightwave circuit optical Tx module and Tx/Rx module |
| JP4652995B2 (en) * | 2006-03-16 | 2011-03-16 | 古河電気工業株式会社 | Integrated semiconductor laser device and semiconductor laser module |
| JP4794505B2 (en) * | 2007-06-15 | 2011-10-19 | 富士通株式会社 | Semiconductor optical amplification device, semiconductor optical amplification system, and semiconductor optical integrated device |
| JP2011204895A (en) | 2010-03-25 | 2011-10-13 | Sumitomo Electric Ind Ltd | Semiconductor laser |
| US8737446B2 (en) | 2010-03-25 | 2014-05-27 | Sumitomo Electric Industries, Ltd. | Semiconductor laser |
| JP5718034B2 (en) * | 2010-12-07 | 2015-05-13 | 古河電気工業株式会社 | Wavelength tunable light source device and method for controlling wavelength tunable light source device |
| JP6031446B2 (en) * | 2010-12-08 | 2016-11-24 | オクラロ テクノロジー リミテッド | Array comprising a plurality of adjustable optical devices |
| US9484712B2 (en) * | 2015-02-05 | 2016-11-01 | Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. | Combined Gain-SOA chip |
| EP3251185B1 (en) * | 2015-03-06 | 2024-07-10 | Apple Inc. | Independent control of emission wavelength and output power of a semiconductor laser |
| US11437779B2 (en) | 2015-04-30 | 2022-09-06 | Apple Inc. | Vernier effect DBR lasers incorporating integrated tuning elements |
| JP6831782B2 (en) | 2015-06-10 | 2021-02-17 | 古河電気工業株式会社 | Pulse laser device |
| US11552454B1 (en) | 2017-09-28 | 2023-01-10 | Apple Inc. | Integrated laser source |
| WO2019067455A1 (en) | 2017-09-28 | 2019-04-04 | Masseta Technologies Llc | Laser architectures using quantum well intermixing techniques |
| US11171464B1 (en) | 2018-12-14 | 2021-11-09 | Apple Inc. | Laser integration techniques |
-
2003
- 2003-12-08 JP JP2003409659A patent/JP4290541B2/en not_active Expired - Lifetime
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