JP2005174599A - Wafer holder and electron microscope device - Google Patents

Wafer holder and electron microscope device Download PDF

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JP2005174599A
JP2005174599A JP2003409235A JP2003409235A JP2005174599A JP 2005174599 A JP2005174599 A JP 2005174599A JP 2003409235 A JP2003409235 A JP 2003409235A JP 2003409235 A JP2003409235 A JP 2003409235A JP 2005174599 A JP2005174599 A JP 2005174599A
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wafer
damping
seat
damping seat
seats
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JP4347676B2 (en
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Hidekazu Seya
英一 瀬谷
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Hitachi High Tech Corp
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Hitachi High Tech Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To reduce wafer vibration causing image vibration, in an electron microscope for carrying out inclined observation of a semiconductor wafer. <P>SOLUTION: A damping seat is mounted at the center part of this wafer holder. The damping seat is so structured as to support a contact part to the back face of a wafer by a thin plate of a resin material; and a longitudinal spring constant is set in a range 1-5 times as much as that at the center part of the wafer with a periphery fixed. Thereby, vibration of the wafer can efficiently be reduced while avoiding adhesion of foreign matter, and high-resolution observation is enabled. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は半導体素子製造分野で使用して好適な検査観察用の電子顕微鏡用に関し、特に電子顕微鏡用ウエハホルダに関する。   The present invention relates to an inspection electron microscope suitable for use in the field of manufacturing semiconductor devices, and more particularly to an electron microscope wafer holder.

電子顕微鏡装置は光学式顕微鏡と比較して高い倍率を有するため、観察中に試料が振動すると、画像にブレ等が生じ分解能が低下する。特に半導体素子製造分野にて使用される検査観察用の電子顕微鏡装置では、厚さ数百マイクロメートル程度の薄い円盤状のウエハが観察対象となる。半導体用ウエハは、面積に比して厚さが薄いため、面と垂直な方向に変形及び振動し易い。   Since the electron microscope apparatus has a higher magnification than the optical microscope, if the sample vibrates during observation, the image is blurred and the resolution is lowered. In particular, in an electron microscope apparatus for inspection and observation used in the semiconductor element manufacturing field, a thin disk-shaped wafer having a thickness of about several hundred micrometers is an object to be observed. Since the semiconductor wafer is thinner than the area, it is easily deformed and vibrated in a direction perpendicular to the surface.

近年、生産効率の向上のため半導体用ウエハは大径化が進行しており、最新の製造ラインでは直径300ミリメートルのウエハが使用されている。このように大径化したウエハの場合でも、厚みはあまり増加していない。そのため、ウエハの曲がり、すなわちベンドによる振動が生じ易い傾向がある。
ウエハホルダの例として、下記の特許文献1、2に記載された例が知られている。
In recent years, the diameter of semiconductor wafers has been increasing in order to improve production efficiency, and wafers having a diameter of 300 mm are used in the latest production lines. Even in the case of a wafer having such a large diameter, the thickness has not increased much. For this reason, the wafer tends to bend, that is, bend-induced vibrations easily.
As examples of the wafer holder, examples described in Patent Documents 1 and 2 below are known.

電子顕微鏡により半導体素子のパターン側壁などを仔細に観察しようとする場合に、電子線をウエハに対して傾斜方向から入射させる必要がある。そのために、傾斜ステージや傾斜ビーム等の傾斜観察機能を備えた電子顕微鏡が用いられる。傾斜観察機能を備えた電子顕微鏡では、ウエハの振動によって画像に乱れが生ずる。   When it is intended to closely observe a pattern side wall of a semiconductor element with an electron microscope, it is necessary to make an electron beam incident on the wafer from an inclined direction. For this purpose, an electron microscope having an inclination observation function such as an inclination stage and an inclination beam is used. In an electron microscope having a tilt observation function, the image is disturbed by the vibration of the wafer.

図3を参照してウエハのベンド振動と画像の乱れの関係を説明する。図3(A)に示すように、電子線31をウエハの表面に対して垂直に入射させた場合には、ウエハ振動によって直接的に画像振動は生じないが、図3(B)のように電子線31をウエハの表面に対して傾斜した方向から入射させた場合には、ウエハの振動によって画像振動が生ずる。半導体ウエハ観察用の電子顕微鏡の画像分解能は通常数ナノメートル程度であるため、極めて僅かなウエハの振動によっても有害な画像の乱れが生ずる。これが傾斜観察機能を備えた電子顕微鏡における課題となっている。   The relationship between wafer bend vibration and image disturbance will be described with reference to FIG. As shown in FIG. 3A, when the electron beam 31 is incident perpendicularly to the surface of the wafer, image vibration does not occur directly due to wafer vibration, but as shown in FIG. When the electron beam 31 is incident from a direction inclined with respect to the surface of the wafer, image vibration is caused by the vibration of the wafer. Since the image resolution of an electron microscope for observing a semiconductor wafer is usually on the order of a few nanometers, harmful image distortion occurs even with very slight wafer vibration. This is a problem in an electron microscope having a tilt observation function.

ウエハ観察用の電子顕微鏡において、ウエハの振動を防止するためのウエハホルダが提案されている。例えば、特開2002−42708号公報には、静電チャックを使用する方法が記載されている。静電チャックでは、ウエハ裏面が静電吸着力によりチャック面全面に密着するため、ウエハの湾曲又は振動を効果的に低減することができる。   In an electron microscope for wafer observation, a wafer holder for preventing wafer vibration has been proposed. For example, Japanese Patent Application Laid-Open No. 2002-42708 describes a method using an electrostatic chuck. In the electrostatic chuck, since the back surface of the wafer is in close contact with the entire surface of the chuck surface by electrostatic attraction force, the curvature or vibration of the wafer can be effectively reduced.

特開平3−95845号公報Japanese Patent Laid-Open No. 3-95845 特許3197220号公報Japanese Patent No. 3197220 特開2002−42708号公報JP 2002-42708 A

しかしながら、静電チャックを使用すると、ウエハ裏面に付着した異物がチャックにより保持され、次の製造プロセスに搬入される。ウエハ裏面に付着した異物は、次の製造工程にて、表面に回りこむことがあり、製品不良の原因となると考えられている。従って、近年はウエハ裏面に異物が付着することを極力回避することが必要になっている。   However, when the electrostatic chuck is used, the foreign matter attached to the back surface of the wafer is held by the chuck and is carried into the next manufacturing process. It is considered that the foreign matter adhering to the back surface of the wafer may wrap around the surface in the next manufacturing process, causing a product defect. Therefore, in recent years, it has been necessary to avoid as much as possible foreign matter adhering to the back surface of the wafer.

本発明の目的は、ウエハの振動を効果的に低減し、しかも、異物付着等の問題のないウエハホルダを実現することにある。   An object of the present invention is to realize a wafer holder that effectively reduces the vibration of the wafer and has no problems such as adhesion of foreign matter.

本発明によると、ウエハを支持する支持座のうち少なくとも3個を剛性の高い固定座とし、他の支持座を高減衰材料を用いた減衰座とする。   According to the present invention, at least three of the support seats that support the wafer are fixed rigid seats, and the other support seats are damping seats using a high damping material.

また、本発明では減衰座として、樹脂材料の薄板を使用し、ウエハ裏面との接触部を上下方向に弾性的に移動可能に支持する構造を用いる。   Further, in the present invention, a thin plate made of a resin material is used as the damping seat, and a structure that supports the contact portion with the back surface of the wafer so as to be elastically movable in the vertical direction is used.

本発明によれば、ウエハを正確な位置に保持しつつ高減衰化が可能であるためウエハの振動を効果的に防止する。ウエハ裏面への接触面積を極力小さくして異物の付着を回避することができる。   According to the present invention, since the attenuation can be increased while holding the wafer in an accurate position, the vibration of the wafer is effectively prevented. The contact area to the back surface of the wafer can be made as small as possible to avoid adhesion of foreign matters.

図1は本発明のウエハホルダ20の1例を示す斜視図、図2は図1に示したウエハホルダ20にウエハ1を装着した状態を示す斜視図である。本例のウエハホルダ20は、電子顕微鏡の試料移動プレートにて使用して好適である。本例のウエハホルダ20はプレート2とプレート2上に設けられた2個の固定ピン3、1個の可動ピン4、6個の固定座5−1、5−2、5−3、5−4、5−5、5−6及び3個の減衰座6を有する。図2に示すように、ウエハ1は2個の固定ピン3と1個の可動ピン4によって横方向の移動が阻止され、6個の固定座5−1、5−2、5−3、5−4、5−5、5−6によって厚さ方向の支持位置が決められる。更に、3個の減衰座6によってウエハ1のベンド振動が減衰される。   FIG. 1 is a perspective view showing an example of a wafer holder 20 of the present invention, and FIG. 2 is a perspective view showing a state in which the wafer 1 is mounted on the wafer holder 20 shown in FIG. The wafer holder 20 of this example is suitable for use in a sample moving plate of an electron microscope. The wafer holder 20 of this example includes a plate 2, two fixed pins 3 provided on the plate 2, one movable pin 4, and six fixed seats 5-1, 5-2, 5-3, 5-4. , 5-5, 5-6 and three damping seats 6. As shown in FIG. 2, the wafer 1 is prevented from moving in the lateral direction by two fixed pins 3 and one movable pin 4, and six fixed seats 5-1, 5-2, 5-3, 5 -4, 5-5, and 5-6 determine the support position in the thickness direction. Further, the bend vibration of the wafer 1 is damped by the three damping seats 6.

固定ピン3と可動ピン4は、ウエハ1の外周部の位置に適当な数だけ設けられる。図示の例では、2個の固定ピン3と1個の可動ピン4が設けられているが、これより多い個数であってもよい。   An appropriate number of fixed pins 3 and movable pins 4 are provided at positions on the outer peripheral portion of the wafer 1. In the illustrated example, two fixed pins 3 and one movable pin 4 are provided, but a larger number may be used.

6個の固定座のうち3個の固定座5−4、5−5、5−6はウエハ1の外周部の位置に設けられ、他の3個の固定座5−1、5−2、5−3は、固定ピン3及び可動ピン4より半径方向内側に同一円周上に配置される。固定座5は少なくとも3個あればよい。   Of the six fixed seats, three fixed seats 5-4, 5-5, and 5-6 are provided at the outer peripheral portion of the wafer 1, and the other three fixed seats 5-1, 5-2, 5-3 are arranged on the same circumference radially inward from the fixed pin 3 and the movable pin 4. There may be at least three fixed seats 5.

減衰座6は好ましくは固定座5−1〜5−6より半径方向内側に同一円周上に配置される。減衰座6は少なくとも1個あればよい。しかしながら、減衰座6を中央部に1つだけ設けると、ウエハ中心部の上下動を主体とする最低次の共振モードの低減には有効だが、ウエハ中心の上下動を伴わない高次のベンド共振には効果が少なくなる。このため本例では減衰座6をウエハ中心からやや離して3つ設け、ウエハの高次の共振も有効に減衰させる構成としている。   The damping seat 6 is preferably arranged on the same circumference radially inward from the fixed seats 5-1 to 5-6. There may be at least one damping seat 6. However, if only one damping seat 6 is provided at the center, it is effective in reducing the lowest-order resonance mode mainly consisting of vertical movement of the wafer center, but higher-order bend resonance without vertical movement of the wafer center. Is less effective. For this reason, in this example, three damping seats 6 are provided slightly apart from the center of the wafer so as to effectively attenuate higher-order resonance of the wafer.

6個の固定座5−1〜5−6は、その上面が全て同一高さとなるように装着されている。同様に、3個の減衰座6は、その上端が全て同一高さとなるように装着されている。しかしながら、減衰座6の上端は、固定座5−1〜5−6の上面より僅かに高い位置に配置される。ウエハが固定座5−1〜5−6によって支持されているとき、減衰座6は弾性変形した状態でウエハを支持する。   The six fixed seats 5-1 to 5-6 are mounted such that their upper surfaces are all at the same height. Similarly, the three damping seats 6 are mounted so that their upper ends are all at the same height. However, the upper end of the damping seat 6 is disposed at a position slightly higher than the upper surfaces of the fixed seats 5-1 to 5-6. When the wafer is supported by the fixed seats 5-1 to 5-6, the damping seat 6 supports the wafer in an elastically deformed state.

ウエハ1を安定的に支持するためには、固定ピン3、可動ピン4、固定座5−1〜5−6等の固定的な支持座の個数を増やせばよい。ウエハ1の振動を有効に防止するためには減衰座6の個数を増やせばよい。しかしながら、各種のプロセスを経たウエハは、残留応力により反りを有する場合がある。従って、支持座及び減衰座の個数を増やしても全ての支持座及び減衰座がウエハに接触するとは限らない。従って、支持座及び減衰座の個数を増やしすぎても意味がない。   In order to stably support the wafer 1, the number of fixed support seats such as the fixed pins 3, the movable pins 4, and the fixed seats 5-1 to 5-6 may be increased. In order to effectively prevent the vibration of the wafer 1, the number of damping seats 6 may be increased. However, wafers that have undergone various processes may have warpage due to residual stress. Therefore, even if the number of support seats and damping seats is increased, not all of the support seats and damping seats contact the wafer. Therefore, it is meaningless to increase the number of support seats and damping seats too much.

以下に、減衰座6の減衰特性について詳細に説明する。一般に、振動を低減するには減衰を与えることが有効であることが知られている。ウエハの振動を低減するためには、ウエハを支持する支持座に高減衰特性を付与すればよい。しかし、そもそも減衰とは材料の内部摩擦等により振動のエネルギが熱エネルギに変換される現象である。したがって、支持座に高減衰特性を付与するには、支持座の材質又は構造を、剛性が低く変形し易いように選択すればよい。しかしながら、支持座が変形し易いと、ウエハを安定的に支持することができない。   Hereinafter, the damping characteristic of the damping seat 6 will be described in detail. In general, it is known that damping is effective for reducing vibration. In order to reduce the vibration of the wafer, a high damping characteristic may be given to the support seat that supports the wafer. However, damping in the first place is a phenomenon in which vibration energy is converted into thermal energy due to internal friction of the material. Therefore, in order to give a high damping characteristic to the support seat, the material or structure of the support seat may be selected so as to be low in rigidity and easily deformed. However, if the support seat is easily deformed, the wafer cannot be stably supported.

本例では、固定座5によってウエハを厚さ方向に支持し、減衰座6によってウエハのベンド振動を減衰させる。本例のように固定座と減衰座を用いてウエハを支持する場合の、減衰座の最適な減衰特性について以下に考察する。   In this example, the wafer is supported in the thickness direction by the fixed seat 5, and the bend vibration of the wafer is damped by the damping seat 6. The optimum damping characteristics of the damping seat when the wafer is supported using the fixed seat and the damping seat as in this example will be discussed below.

図4は周辺を固定したウエハの中央部に減衰座を当てた場合の、ウエハ振動の減衰係数の変動を計算した結果を示すグラフである。図中、ηはウエハ振動の振動系全体の減衰係数、ηcは減衰座の減衰係数、kcは減衰座のウエハ支持部の縦方向のばね定数、kwは周辺を固定したウエハの中央部に上下方向の力を加えた場合の、ウエハのベンドによる中央部の変位に関するばね定数である。グラフ51の縦軸は減衰係数の比η/ηc、横軸はばね定数の比kc/kwである。減衰係数の比η/ηcは、ばね定数の比kc/kwの増加に応じて上昇して極大となった後、減少する特性となる。   FIG. 4 is a graph showing the result of calculating the variation of the damping coefficient of the wafer vibration when the damping seat is applied to the central portion of the wafer whose periphery is fixed. In the figure, η is the damping coefficient of the entire vibration system of the wafer vibration, ηc is the damping coefficient of the damping seat, kc is the vertical spring constant of the wafer support portion of the damping seat, and kw is up and down at the center of the wafer with the periphery fixed. This is a spring constant related to the displacement of the central portion due to the bend of the wafer when a directional force is applied. The vertical axis of the graph 51 is the damping coefficient ratio η / ηc, and the horizontal axis is the spring constant ratio kc / kw. The damping coefficient ratio η / ηc increases as the spring constant ratio kc / kw increases, reaches a maximum, and then decreases.

このような中央部が高い特性となるのは以下の理由による。
(1)減衰座のばね定数がウエハのベンドのばね定数に比較して小さい領域(kc/kw=0.1〜1)では、ウエハ振動に従って減衰座が変形し、減衰座の変形によって振動エネルギが吸収され、減衰作用が働く。但し、減衰座のばね定数が小さいほどウエハと減衰座の間に働く力は小さく、振動エネルギの伝達量は小さくなるため、振動系全体としての減衰は小さくなる。
(2)減衰座のばね定数がウエハベンドのばね定数に比較して数倍以上となる領域(kc/kw=5〜100)では、ウエハ振動に伴ってウエハと減衰座の間に働く力は大きくなるが、減衰座が硬いため変形しにくく、ウエハは減衰座に接触していない部分で大きく変形することになる。このため減衰座のばね定数が大きいほど、減衰座による振動エネルギの吸収はかえって小さくなる。
(3)結局、減衰座のばね定数がウエハベンドのばね定数に比較して数倍となる領域(kc/kw=1〜5:ハッチング領域52)では、減衰座によってウエハ振動が有効に減衰する。従って、ばね定数の比が1から5までとなるように減衰座のばね定数を決めるのが良い。
The reason why such a central portion has high characteristics is as follows.
(1) In a region where the spring constant of the damping seat is smaller than the spring constant of the bend of the wafer (kc / kw = 0.1-1), the damping seat is deformed according to the wafer vibration, and vibration energy is generated by the deformation of the damping seat. Is absorbed and a damping action works. However, the smaller the spring constant of the damping seat, the smaller the force acting between the wafer and the damping seat, and the smaller the amount of vibration energy transmitted, the smaller the damping of the entire vibration system.
(2) In the region (kc / kw = 5 to 100) in which the spring constant of the damping seat is several times or more than the spring constant of the wafer bend, the force acting between the wafer and the damping seat is large due to wafer vibration. However, since the damping seat is hard, it is difficult to be deformed, and the wafer is greatly deformed at a portion not in contact with the damping seat. For this reason, the larger the spring constant of the damping seat, the smaller the absorption of vibration energy by the damping seat.
(3) Eventually, in the region where the spring constant of the damping seat is several times that of the wafer bend (kc / kw = 1-5: hatched region 52), the wafer vibration is effectively damped by the damping seat. Therefore, it is preferable to determine the spring constant of the damping seat so that the ratio of the spring constant is 1 to 5.

周辺を固定した直径300ミリメートルのシリコンウエハの場合、上述のばね定数kwはおよそ16ニュートン/ミリメートル程度である。そこで、上述の減衰座のばね定数kcを16ニュートン/ミリメートルから80ニュートン/ミリメートルとすればよい。尚、複数個の減衰座を設ける場合には、この値を減衰座の個数で割った値が、各減衰座のばね定数となる。こうして本例では、ウエハベンドのばね定数kwに対する減衰座のばね定数kcの比をkc/kw=1〜5とすることにより、減衰座の最適な減衰特性を得ることができる。   In the case of a silicon wafer having a diameter of 300 mm and a fixed periphery, the above-described spring constant kw is about 16 Newton / mm. Therefore, the spring constant kc of the damping seat may be set to 16 Newton / mm to 80 Newton / mm. When a plurality of damping seats are provided, the value obtained by dividing this value by the number of damping seats is the spring constant of each damping seat. Thus, in this example, the optimum damping characteristic of the damping seat can be obtained by setting the ratio of the spring constant kc of the damping seat to the spring constant kw of the wafer bend to kc / kw = 1-5.

図5は本発明による減衰座の第1の例を示す。本例の減衰座6は、薄板41と取り付けブロック42からなる。薄板41はU字形に曲げられ、その両端は、取り付けブロック42の両端面に接続されている。U字形の先端部分がウエハとの接触するウエハ接触部11を構成する。取り付けブロック42は、図示しないねじ又はボルトによってプレート2に取り付けられてよい。減衰座6は図示のようにプレート2に設けた凹部2Aに配置されてよい。   FIG. 5 shows a first example of a damping seat according to the invention. The damping seat 6 of this example includes a thin plate 41 and a mounting block 42. The thin plate 41 is bent into a U shape, and both ends thereof are connected to both end surfaces of the mounting block 42. The U-shaped tip portion constitutes a wafer contact portion 11 in contact with the wafer. The mounting block 42 may be attached to the plate 2 by screws or bolts (not shown). The damping seat 6 may be disposed in a recess 2A provided in the plate 2 as shown.

薄板41は、厚さが0.1ミリメートルから0.2ミリメートルの樹脂製薄板からなる。薄板41の材料は、異物の付着又は発生が少ない樹脂であればどのようなものであってもよく、ナイロン、ポリエチレン樹脂、ポリイミド樹脂、フッ素樹脂等であってよい。しかしながら、好ましくはフッ素樹脂が使用される。   The thin plate 41 is made of a resin thin plate having a thickness of 0.1 mm to 0.2 mm. The material of the thin plate 41 may be any resin as long as it is a resin with less adhesion or generation of foreign matter, and may be nylon, polyethylene resin, polyimide resin, fluorine resin, or the like. However, preferably a fluororesin is used.

こうしてU字形に曲げられた薄板を用いるため、上述のようにばね定数の比がkc/kw=1〜5となる減衰座を容易に実現することができる。例えば、各減衰座のウエハ接触部11を下向きに押した場合のばね定数が、およそ10ニュートン/ミリメートルとなるように寸法を定める。6個の減衰座のばね定数は、およそ60ニュートン/ミリメートルとなる。   Since a thin plate bent in a U shape is used in this way, a damping seat with a spring constant ratio of kc / kw = 1 to 5 can be easily realized as described above. For example, the dimensions are determined so that the spring constant when the wafer contact portion 11 of each damping seat is pushed downward is approximately 10 Newton / mm. The spring constant of the six damping seats is approximately 60 newtons / millimeter.

本例では、減衰座6のウエハ接触部11が円筒面状となっており、ウエハ裏面との接触面積が小さい。上述のように、減衰座6の上端は固定座5の上面より僅かに高い位置に配置され、ウエハをウエハホルダに支持すると、減衰座6のウエハ接着部11は弾性変形した状態でウエハ裏面と接触する。この接触面積は小さいから、ウエハ裏面への異物付着や汚染の可能性は小さい。   In this example, the wafer contact portion 11 of the attenuation seat 6 has a cylindrical surface, and the contact area with the back surface of the wafer is small. As described above, the upper end of the damping seat 6 is disposed at a position slightly higher than the upper surface of the fixed seat 5, and when the wafer is supported by the wafer holder, the wafer bonding portion 11 of the damping seat 6 contacts the back surface of the wafer in an elastically deformed state. To do. Since this contact area is small, there is little possibility of foreign matter adhesion or contamination on the backside of the wafer.

図6は本発明による減衰座6の他の例を示す。本例の減衰座6は、ウエハ接触部11、薄板41および2つの取り付けブロック42を有し、これらは略コの字形の一体構造に形成されている。本例の減衰座の材料は、図5の減衰座の第1の例の材料と同様であってよい。本例でも、ウエハ接触部11は円筒面を有する。2つの取り付けブロック42は、図示しないねじ又はボルトによってプレート2に取り付けられてよい。減衰座6は図5Aに示した例と同様に、プレート2に設けた凹部に配置されてよい。   FIG. 6 shows another example of the damping seat 6 according to the present invention. The damping seat 6 of this example has a wafer contact portion 11, a thin plate 41, and two mounting blocks 42, which are formed in a substantially U-shaped integral structure. The material of the damping seat of this example may be the same as the material of the first example of the damping seat of FIG. Also in this example, the wafer contact portion 11 has a cylindrical surface. The two attachment blocks 42 may be attached to the plate 2 by screws or bolts (not shown). Similarly to the example shown in FIG. 5A, the damping seat 6 may be disposed in a recess provided in the plate 2.

なお、上述の減衰座の第1及び第2の例では、いずれも薄板41の両端を固定した構造となっている。しかしながら、薄板を片持ちで固定した構造であってもよい。片持ち構造の場合、製造工程が少ない、使用する材料が少ない等の利点があるが、薄板41が上からの力で変形した場合に、同時にウエハ接触部11は横方向へ変位する可能性がある。従って、ウエハ裏面との接触が不安定となる欠点がある。   In the first and second examples of the damping seat described above, both ends of the thin plate 41 are fixed. However, a structure in which a thin plate is fixed in a cantilever manner may be used. In the case of the cantilever structure, there are advantages such as fewer manufacturing processes and less material to be used. However, when the thin plate 41 is deformed by a force from above, the wafer contact portion 11 may be displaced laterally at the same time. is there. Therefore, there is a drawback that the contact with the back surface of the wafer becomes unstable.

図7を参照して本発明のウエハホルダの他の例を説明する。本例のウエハホルダは、図1に示した第1の例と比較して、3個の固定座5−4、5−5、5−6の代わりに3個の減衰座6−1、6−2、6−3が設けられている点が異なり、他の構成は同様であってよい。即ち、本例のウエハホルダは、プレート2とプレート2上に設けられた2個の固定ピン3、1個の可動ピン4、3個の固定座5−1、5−2、5−3及び6個の減衰座6−1、6−2、6−3、6、6、6を有する。2個の固定ピン3、1個の可動ピン4は、ウエハ1の外周部の位置に設けられる。3個の減衰座6−1、6−2、6−3は、ウエハ1の外周部の位置に同一円周上に設けられる。3個の固定座5−1、5−2、5−3は、図1の例と同様に、固定ピン3及び可動ピン4より、半径方向内側に同一円周上に設けられる。3個の減衰座6は、図1の例と同様に、更に半径方向内側に同一円周上に設けられる。   Another example of the wafer holder of the present invention will be described with reference to FIG. Compared with the first example shown in FIG. 1, the wafer holder of this example has three damping seats 6-1, 6-6 instead of the three fixing seats 5-4, 5-5, 5-6. 2 and 6-3 are different, and other configurations may be the same. That is, the wafer holder of this example includes a plate 2, two fixed pins 3 provided on the plate 2, one movable pin 4, three fixed seats 5-1, 5-2, 5-3 and 6. It has the damping seats 6-1, 6-2, 6-3, 6, 6, 6. Two fixed pins 3 and one movable pin 4 are provided at a position of the outer peripheral portion of the wafer 1. The three attenuation seats 6-1, 6-2 and 6-3 are provided on the same circumference at the position of the outer peripheral portion of the wafer 1. The three fixed seats 5-1, 5-2, and 5-3 are provided on the same circumference radially inward from the fixed pin 3 and the movable pin 4 as in the example of FIG. 1. The three damping seats 6 are provided on the same circumference further radially inward as in the example of FIG.

本例のウエハホルダは、基本的に図1に示した例と同様な機能および効果を有するが、減衰座の数が多いためより大きな減衰が得られる。ウエハに反りがあっても安定的に支持することができるが、ウエハの上下方向の剛性が低下するため、最低次の共振周波数もやや低くなる。   The wafer holder of this example basically has the same functions and effects as those of the example shown in FIG. 1, but a larger attenuation can be obtained because of the large number of attenuation seats. Even if the wafer is warped, it can be stably supported, but since the rigidity in the vertical direction of the wafer is lowered, the lowest-order resonance frequency is also slightly lowered.

本例では、図1に示した第1の例と比較して、3個の固定座5−4、5−5、5−6の代わりに3個の減衰座6−1、6−2、6−3を設けたため、固定的な支持座及び減衰座の総数は増加していない。従って、上述のように、ウエハ1に反りがあっても、ウエハに接触しない支持座又は減衰座が存在する可能性は少ない。   In this example, compared to the first example shown in FIG. 1, three damping seats 6-1, 6-2, instead of the three fixing seats 5-4, 5-5, 5-6, 6-3 is provided, the total number of fixed support seats and damping seats has not increased. Therefore, as described above, even if the wafer 1 is warped, there is little possibility that there is a support seat or a damping seat that does not contact the wafer.

図8は本発明によるウエハホルダを備えた傾斜機能付電子顕微鏡の例を示す。本例の電子顕微鏡は、電子光学系カラム21、真空チャンバ22、ローダ23、傾斜プレート24、X移動プレート25、及びY移動プレート26を有する。Y移動プレート26上にウエハ1を支持するウエハホルダ20が設けられている。図示のように、ウエハ1は、電子光学系カラム21の光軸に対して傾斜している。   FIG. 8 shows an example of an electron microscope with a tilt function equipped with a wafer holder according to the present invention. The electron microscope of this example includes an electron optical system column 21, a vacuum chamber 22, a loader 23, an inclined plate 24, an X moving plate 25, and a Y moving plate 26. A wafer holder 20 that supports the wafer 1 is provided on the Y moving plate 26. As shown, the wafer 1 is inclined with respect to the optical axis of the electron optical system column 21.

本発明の電子顕微鏡によると、ウエハの振動を低減できるため、高分解能の傾斜観察が実現でき、半導体微細パターンの観察に好適である。   According to the electron microscope of the present invention, since the vibration of the wafer can be reduced, tilt observation with high resolution can be realized, which is suitable for observation of a semiconductor fine pattern.

以上本発明の例を説明したが本発明は上述の例に限定されるものではなく、特許請求の範囲に記載された発明の範囲にて様々な変更が可能であることは当業者に理解されよう。   The example of the present invention has been described above, but the present invention is not limited to the above-described example, and it will be understood by those skilled in the art that various modifications can be made within the scope of the invention described in the claims. Like.

本発明のウエハホルダの第1の例を示す斜視図である。It is a perspective view which shows the 1st example of the wafer holder of this invention. 図1のウエハホルダにウエハを装着した状態を示す斜視図である。It is a perspective view which shows the state which mounted | wore the wafer holder of FIG. ウエハの振動と電子ビームの関係を示す図である。It is a figure which shows the relationship between the vibration of a wafer, and an electron beam. 減衰係数の比とばね定数の関係を説明するための説明図である。It is explanatory drawing for demonstrating the relationship between the ratio of a damping coefficient, and a spring constant. 本発明による減衰座の構造の一例を示す図である。It is a figure which shows an example of the structure of the damping seat by this invention. 本発明による減衰座の構造の他の例を示す斜視図である。It is a perspective view which shows the other example of the structure of the damping seat by this invention. 本発明のウエハホルダの第2の例を示す斜視図である。It is a perspective view which shows the 2nd example of the wafer holder of this invention. 本発明によるウエハホルダを備えた傾斜観察機能を有する電子顕微鏡の概略を示す図である。It is a figure which shows the outline of the electron microscope which has the tilt observation function provided with the wafer holder by this invention.

符号の説明Explanation of symbols

1…ウエハ、2…プレート、3…固定ピン、4…可動ピン、5−1〜5−6…固定座、6、6−1〜6−3…減衰座、11…ウエハ接触部、20…ウエハホルダ、21…電子光学系カラム、22…真空チャンバ、23…ローダ、24…傾斜プレート、25…X移動プレート、26…Y移動プレート、31…電子線、41…薄板、42…取り付けブロック   DESCRIPTION OF SYMBOLS 1 ... Wafer, 2 ... Plate, 3 ... Fixed pin, 4 ... Movable pin, 5-1 to 5-6 ... Fixed seat, 6, 6-1 to 6-3 ... Damping seat, 11 ... Wafer contact part, 20 ... Wafer holder, 21 ... electro-optic system column, 22 ... vacuum chamber, 23 ... loader, 24 ... tilt plate, 25 ... X moving plate, 26 ... Y moving plate, 31 ... electron beam, 41 ... thin plate, 42 ... mounting block

Claims (7)

ウエハを支持するための3個以上の固定座とウエハを弾性的に支持するための少なくとも1個の減衰座を備え、該減衰座は、ウエハの裏面に接触するウエハ接触部と、該ウエハ接触部を弾性的に移動可能に支持する支持部とを備えることを特徴とするウエハホルダ。 Three or more fixed seats for supporting the wafer and at least one damping seat for elastically supporting the wafer, the damping seat comprising a wafer contact portion that contacts the back surface of the wafer, and the wafer contact A wafer holder comprising: a support portion that elastically moves the portion. 請求項1記載のウエハホルダにおいて、周辺を支持したウエハの中央部のばね定数kwに対する減衰座のばね定数kcの比がkc/kw=1〜5となるように、上記減衰座のばね定数を選定したことを特徴とするウエハホルダ。 2. The wafer holder according to claim 1, wherein the spring constant of the damping seat is selected so that the ratio of the spring constant kc of the damping seat to the spring constant kw of the central portion of the wafer supporting the periphery is kc / kw = 1-5. A wafer holder characterized by that. 請求項1記載のウエハホルダにおいて、上記減衰座の全体のばね定数kcが16〜80ニュートン/ミリメートルであることを特徴とするウエハホルダ。 2. The wafer holder according to claim 1, wherein an overall spring constant kc of the damping seat is 16 to 80 newtons / millimeter. 請求項1記載のウエハホルダにおいて、上記減衰座のウエハ接触部は薄板を湾曲して形成した円筒面からなることを特徴とするウエハホルダ。 2. The wafer holder according to claim 1, wherein the wafer contact portion of the damping seat is a cylindrical surface formed by bending a thin plate. 請求項1記載のウエハホルダにおいて、上記減衰座の上端は上記固定座の上面より突出して配置されていることを特徴とするウエハホルダ。 2. The wafer holder according to claim 1, wherein an upper end of the damping seat is disposed so as to protrude from an upper surface of the fixed seat. 請求項1記載のウエハホルダにおいて、上記固定座はウエハの周辺部に相当する位置に配置され、上記減衰座は上記固定座よりウエハの半径方向内側に配置されていることを特徴とするウエハホルダ。 2. The wafer holder according to claim 1, wherein the fixed seat is disposed at a position corresponding to a peripheral portion of the wafer, and the damping seat is disposed radially inward from the fixed seat. 請求項1から6のいずれか1項記載のウエハホルダを備えたことを特徴とする電子顕微鏡装置。 An electron microscope apparatus comprising the wafer holder according to claim 1.
JP2003409235A 2003-12-08 2003-12-08 Wafer holder and electron microscope apparatus Expired - Fee Related JP4347676B2 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007281254A (en) * 2006-04-07 2007-10-25 Tokyo Electron Ltd Substrate support and substrate transfer mechanism

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007281254A (en) * 2006-04-07 2007-10-25 Tokyo Electron Ltd Substrate support and substrate transfer mechanism

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