JP2005146369A5 - - Google Patents
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- JP2005146369A5 JP2005146369A5 JP2003387309A JP2003387309A JP2005146369A5 JP 2005146369 A5 JP2005146369 A5 JP 2005146369A5 JP 2003387309 A JP2003387309 A JP 2003387309A JP 2003387309 A JP2003387309 A JP 2003387309A JP 2005146369 A5 JP2005146369 A5 JP 2005146369A5
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- target
- sputtering apparatus
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- outer peripheral
- thickness
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Description
本発明の請求項４に記載のスパッタリング装置は、請求項１〜３のいずれかにおいて、外周部の厚みが中央部よりも薄い前記ターゲットは、外周部と中央部の間に段差部を設けて形成し、段差部の深さをＨ、幅をＷとしたときに、“ ０．５ ≦ Ｈ ／ Ｗ ≦ ２．０ ”の関係を満たすよう構成したことを特徴とする。 A sputtering apparatus according to a fourth aspect of the present invention is the sputtering apparatus according to any one of the first to third aspects, wherein the target whose outer peripheral portion is thinner than the central portion has a stepped portion between the outer peripheral portion and the central portion. It is characterized in that it is formed so as to satisfy the relationship of “0.5 ≦ H / W ≦ 2.0” when the depth of the step portion is H and the width is W.
本発明の請求項５記載のスパッタリング装置は、請求項１〜４のいずれかにおいて、前記ターゲットの周辺に設置されたアースシールドを移動可能に構成したことを特徴とする。 According to a fifth aspect of the present invention, there is provided a sputtering apparatus according to any one of the first to fourth aspects, wherein an earth shield installed around the target is configured to be movable.
本発明の請求項６に記載のスパッタリング装置は、真空チャンバーと、前記真空チャンバー内に設置されたターゲットと、前記ターゲットに直流または高周波電圧を印加する電源と、前記ターゲットの裏面に配置された磁場発生装置とを有するスパッタリング装置において、前記ターゲットは凸形状であって、凸形状のターゲットのうち、凸部の上表面と下表面との高さの差をＨ、前記ターゲットの外周部と内周部との差をＨとしたとき、０．５ ≦ Ｈ ／ Ｗ ≦ ２．０の関係を満たすと共に、前記ターゲットの外周にアースシールドを配置され、前記アースシールドの上面は、前記ターゲットの凸部の上表面よりも低く設置されていることを特徴とする。 A sputtering apparatus according to a sixth aspect of the present invention includes a vacuum chamber, a target installed in the vacuum chamber, a power source for applying a direct current or a high frequency voltage to the target, and a magnetic field disposed on the back surface of the target. In the sputtering apparatus having the generator, the target has a convex shape, and among the convex targets, the difference in height between the upper surface and the lower surface of the convex portion is H, the outer peripheral portion and the inner peripheral portion of the target When the difference from the portion is H, a relationship 0.5 ≦ H / W ≦ 2.0 is satisfied, and an earth shield is disposed on the outer periphery of the target. It is characterized in that it is installed lower than the upper surface .
本発明の請求項７に記載のスパッタリング方法は、容器内にターゲットを設置し、前記容器内部にプラズマを発生させて薄膜を形成するに際し、前記ターゲットの周辺に設置されたアースシールドを、ターゲットの侵食に伴って前記アースシールドの表面とターゲットの表面の距離を一定に保つように制御しながら成膜することを特徴とする。 In the sputtering method according to claim 7 of the present invention, when a target is placed in a container and plasma is generated inside the container to form a thin film, an earth shield placed around the target is attached to the target. The film formation is performed while controlling the distance between the surface of the earth shield and the surface of the target to be constant as erosion occurs.
本発明の請求項８に記載のターゲットは、プラズマを発生させた容器の内部に設置されて薄膜の形成するスパッタリング装置に使用されるターゲットであって、外周部の厚みを中央部の厚みよりも薄くしたことを特徴とする。 The target according to claim 8 of the present invention is a target that is used in a sputtering apparatus that is installed inside a vessel that generates plasma and forms a thin film, and the outer peripheral portion has a thickness that is greater than the thickness of the central portion. Characterized by thinning.
Claims (8)
前記ターゲットの外周部の厚みを前記ターゲットの中央部の厚みよりも薄くした
スパッタリング装置。 In a sputtering apparatus in which a target is installed in a container and a thin film is formed by generating plasma inside the container,
The sputtering apparatus which made thickness of the outer peripheral part of the said target thinner than the thickness of the center part of the said target.
スパッタリング装置。 In a sputtering apparatus in which a target is installed in a container, a magnetic field generator is provided on the back surface of the target, and a thin film is formed by generating plasma inside the container, the thickness of the outer peripheral part of the target is made larger than the thickness of the center part of the target A sputtering apparatus in which the magnetic pole of the magnetic field generator is provided on the outer periphery of the target.
前記ターゲットの外周部の厚みを前記ターゲットの中央部の厚みよりも薄くし、
前記ターゲットの裏面に成膜中に移動する磁場発生装置を設け、
かつ前記磁場発生装置の磁極がターゲットの前記外周部の裏面を通過するように構成した
スパッタリング装置。 In a sputtering apparatus in which a target is installed in a container and a thin film is formed by generating plasma inside the container,
The thickness of the outer peripheral portion of the target is made thinner than the thickness of the central portion of the target,
A magnetic field generator that moves during film formation is provided on the back surface of the target,
And the sputtering device comprised so that the magnetic pole of the said magnetic field generator might pass the back surface of the said outer peripheral part of a target.
０．５ ≦ Ｈ ／ Ｗ ≦ ２．０0.5 ≦ H / W ≦ 2.0
の関係を満たすよう構成したConfigured to satisfy the relationship
請求項１〜３のいずれかに記載のスパッタリング装置。The sputtering apparatus in any one of Claims 1-3.
請求項１〜４のいずれかに記載のスパッタリング装置。The sputtering apparatus in any one of Claims 1-4.
前記ターゲットは凸形状であって、凸形状のターゲットのうち、凸部の上表面と下表面との高さの差をＨ、前記ターゲットの外周部と内周部との差をＨとしたとき、The target has a convex shape, and among the convex targets, the difference in height between the upper surface and the lower surface of the convex portion is H, and the difference between the outer peripheral portion and the inner peripheral portion of the target is H ,
０．５ ≦ Ｈ ／ Ｗ ≦ ２．０0.5 ≦ H / W ≦ 2.0
の関係を満たすと共に、前記ターゲットの外周にアースシールドを配置され、前記アースシールドの上面は、前記ターゲットの凸部の上表面よりも低く設置されていることを特徴とするAnd an earth shield is disposed on the outer periphery of the target, and the upper surface of the earth shield is installed lower than the upper surface of the convex portion of the target.
スパッタリング装置。Sputtering equipment.
前記ターゲットの周辺に設置されたアースシールドを、ターゲットの侵食に伴って前記アースシールドの表面とターゲットの表面の距離を一定に保つように制御しながら成膜するAn earth shield installed around the target is deposited while controlling the distance between the surface of the earth shield and the surface of the target to be constant as the target erodes.
スパッタリング方法。Sputtering method.
外周部の厚みを中央部の厚みよりも薄くしたThe outer peripheral thickness was made thinner than the central thickness
ターゲット。target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003387309A JP4197149B2 (en) | 2003-11-18 | 2003-11-18 | Sputtering equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003387309A JP4197149B2 (en) | 2003-11-18 | 2003-11-18 | Sputtering equipment |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005146369A JP2005146369A (en) | 2005-06-09 |
| JP2005146369A5 true JP2005146369A5 (en) | 2006-11-24 |
| JP4197149B2 JP4197149B2 (en) | 2008-12-17 |
Family
ID=34694690
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003387309A Expired - Fee Related JP4197149B2 (en) | 2003-11-18 | 2003-11-18 | Sputtering equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4197149B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007011026A (en) * | 2005-06-30 | 2007-01-18 | Ricoh Co Ltd | Conductive member, process cartridge, and image forming apparatus |
| JP4882332B2 (en) * | 2005-10-11 | 2012-02-22 | 大日本印刷株式会社 | Sputtering equipment |
| JP5300066B2 (en) * | 2009-04-15 | 2013-09-25 | 株式会社昭和真空 | Magnetron cathode |
| TWI558832B (en) * | 2011-12-30 | 2016-11-21 | Hoya Corp | An optical element, an optical thin film forming apparatus, and an optical thin film forming method |
-
2003
- 2003-11-18 JP JP2003387309A patent/JP4197149B2/en not_active Expired - Fee Related
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