JP2005142227A - Plasma processing method and processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To perform plasma treatment on a packaging substrate surface which is desired of the plasma treatment, and prevent effectively plasma irradiation to a part of the packaging substrate which does not desire the plasma treatment. <P>SOLUTION: The plasma processing apparatus for performing cleaning and modification of a packaging substrate surface is provided with a reaction chamber for conducting plasma treatment, a first electrode which is installed in the reaction chamber and applying high-frequency electric power, a second electrode which is installed in the reaction chamber opposite to the first electrode and generating plasma in a part to the first electrode, and a mask retainer which includes a mask and a movable part for adjusting the distance between the mask and the packaging substrate, in order to arrange the mask at a position. The mask is used for shielding a region which does not desire plasma treatment on the packaging substrate to be treated which is supported either of the electrodes from irradiation of the plasma, and is arranged to cover the region, at a position between the packaging substrate and the electrode which faces it. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a plasma processing method and a processing apparatus in mounting substrate surface processing in which processing such as cleaning and modification of the surface of a mounting substrate is performed with plasma.

  In the field of mounting technology, high-density mounting is required as electronic devices become smaller and more functional. Therefore, the arrangement of elements on the mounting board is miniaturized, and the influence of particle adhesion on the board and the presence of chemical substances such as chemicals on the mounting board is becoming more apparent. . Therefore, there is a need for a method of removing such particle adhesion and chemical substance residence with higher reliability. One such method is a substrate surface treatment method using plasma.

  For example, nickel hydroxide deposited on the surface of an electrode (consisting of three layers of a copper layer, a nickel layer, and a gold layer) on a printed circuit board due to sputtering action by argon plasma Inorganic substances can be removed. Thereby, the bonding strength in the case of wire bonding to the gold layer which is the bonding bonding surface can be improved. Further, the plasma treatment is similarly used when the bare IC is bonded to the gold layer by flip chip bonding.

  Alternatively, when the bare IC is bonded to the lead electrode on the polyimide film substrate via ACF (anisotropic conductive film), the substrate surface is activated by irradiating the polyimide film substrate with oxygen plasma before bonding. Thus, the bonding strength between the polyimide film and the ACF can be improved.

  Furthermore, by performing the plasma treatment, the wettability of the substrate surface can be improved, and the adhesion between the substrate and the sealing resin can be improved.

  Hereinafter, these plasma processing methods will be described more specifically with reference to FIGS.

  FIG. 4 is a schematic configuration diagram of a conventional plasma processing apparatus for a mounting substrate. The conventional apparatus shown in FIG. 4 has a reaction chamber 1 for performing plasma processing, a high-frequency electrode 5 for generating plasma therein, a counter electrode 7, and a high-frequency power for applying high-frequency power to the high-frequency electrode 5. A high frequency power supply 8 is provided. The reaction chamber 1 is provided with a gas inlet 2 and a vacuum exhaust 3 and is grounded. The high-frequency electrode 5 is disposed in the reaction chamber 1 through the insulating ring 4 between the high-frequency electrode 5 and the reaction chamber 1. The mounting substrate 6 is placed on the high frequency electrode 5. The counter electrode 7 disposed in the reaction chamber 1 faces the high frequency electrode 5 and is grounded. High frequency power is applied to the high frequency electrode 5 by a high frequency power supply 8 through a matching tuner (not shown) and a high frequency power supply unit (not shown). An O-ring (not shown) is interposed between the high-frequency electrode 5 and the insulating ring 4 and between the insulating ring 4 and the reaction chamber 1 to maintain the vacuum in the reaction chamber 1, and A cooling groove 9 through which cooling water flows is provided so that the O-ring is not heated to 200 ° C. or higher.

In the mounting substrate surface processing apparatus configured as described above, a conventional method for plasma processing the surface of the mounting substrate 6 made of glass epoxy using argon gas before bonding the bare IC to the mounting substrate 6 will be described. To do. Plasma is generated when high-frequency power of 200 W is applied to the high-frequency electrode 5 in a state where the degree of vacuum is maintained at 30 Pa while flowing 10 SCCM of argon gas from the gas inlet 2, and the argon in the plasma is formed on the surface of the mounting substrate 6 Ions are irradiated.

  As shown in FIG. 5, the electrode 10 on the surface of the mounting substrate 6 includes a copper layer 11 (film thickness of about 35 μm), a nickel layer 12 (film thickness of about 3 μm), and a gold layer 13 (film thickness of about 0.05 μm). It is comprised from three layers. On the surface of the gold layer 13, nickel moves from the underlying nickel layer 12 to the surface through a thermal process or the like, and is deposited as nickel hydroxide or the like. The nickel hydroxide is sputtered away by irradiation with argon ions, and the surface of the gold layer 13 is cleaned (see, for example, Patent Document 1).

  FIG. 6 shows a series of schematic steps in a conventional method in which the electrode 10 is irradiated with plasma and the bare IC 15 is mounted. As shown in FIG. 6A, the mounting component 14 and the electrode 10 are mounted on the mounting substrate 6. In FIG. 6B, ion particles are irradiated with plasma over the entire upper surface of the mounting substrate 6. After the plasma irradiation, the bare IC 15 is mounted on the electrode 10 of the mounting substrate 6 in FIG. At this time, the bare IC is provided with a gold bump 16 for bonding to the electrode 10, and the gold bump 16 and the electrode 10 of the mounting substrate 6 are bonded by applying ultrasonic waves. Next, in FIG. 6D, an underfill material 17 mainly composed of epoxy is applied with a dispenser.

  In the method shown in FIG. 6, since the entire surface of the mounting substrate 6 is subjected to plasma processing (FIG. 6B), not only the electrode 10 to be processed but also the component 14 that is not originally processed is subjected to ion irradiation in the plasma. become. Therefore, in the case of a component with low plasma resistance, there arises a problem that the quality of the component is deteriorated. In addition, the resist applied on the substrate surface is peeled off under the influence of the ionized gas, and the wettability of the substrate surface is improved by plasma irradiation, so that the underfill material 17 flows to the part 14 mounting portion. There's a problem.

Therefore, conventionally, in order to protect the component 14 that is not the object to be processed from ion irradiation, a part of the component 14 on the mounting substrate 6 has been masked (for example, Patent Document 2). In the plasma screening apparatus for a substrate disclosed in Patent Document 2, a cover body is attached integrally with a lid portion inside a case where plasma processing is performed, and at the same time the chip on the substrate is covered with the cover body. Thus, the chip portion is protected from plasma ion particles, and only the circuit pattern around the chip is cleaned with plasma ion particles (see FIGS. 1 to 3 of Patent Document 2).
JP-A-8-227911 JP-A-8-115936

  However, in the structure of the cover body of the plasma device disclosed in Patent Document 2, although the chip is protected from the ion irradiation by the cover body, the entire surface of the circuit pattern is irradiated with the ion particles. The wettability of the surrounding substrate surface part will also increase. Therefore, the problem that the underfill material flows out to the chip mounting portion still remains when the bare IC is connected to the electrode. Further, when a paste agent such as ACP (anisotropic conductive paste) or NCP (insulating paste) is used instead of using ultrasonic waves when connecting the bare IC to the electrode of the substrate, the substrate around the electrode Since the wettability of the surface is increased due to the plasma treatment, there arises a problem that these pastes flow out on the substrate surface. Furthermore, in the apparatus of Patent Document 2, since the cover body is integrated with the lid of the case, the distance between the cover body and the high-frequency electrode cannot be adjusted once the case is manufactured. Can occur.

  On the other hand, in another conventional mask disclosed in Patent Document 2, only the electrode at the tip of the circuit pattern of the substrate exposed from the pattern hole provided in the mask can be cleaned by the etching action of ion particles by plasma. Although described, this mask is directly superimposed on the substrate, and this configuration is disadvantageous when aiming at automation of a series of operations of masking the substrate and performing plasma processing (Patent Document 2). (See FIG. 4).

  The object of the present invention is to solve the above problems. That is, the present invention uses a mask to perform plasma processing on a substrate surface on which plasma processing is desired, while effectively preventing plasma irradiation on a portion of the mounting substrate where plasma processing is not desired. The purpose is to provide. Thereby, it is possible to prevent the underfill material from flowing out for mounting the bare IC while preventing the deterioration of the chip parts. Furthermore, the present invention provides an apparatus having a configuration suitable for automating plasma processing of a mounting substrate and capable of easily adjusting the distance between a mask and a high-frequency electrode (or substrate) according to the type of the substrate. The purpose is to do.

  In order to achieve the above object, in one aspect, the present invention provides a plasma processing apparatus for cleaning or modifying a mounting substrate surface.

  A plasma processing apparatus according to the present invention includes a reaction chamber for performing plasma processing, a first electrode for applying high-frequency power provided in the reaction chamber, and a reaction chamber that faces the first electrode. Plasma irradiation is performed on a second electrode for generating plasma between the first electrode and a region where plasma processing is not desired on a processing target mounting substrate supported by one of the electrodes. And a mask support for disposing the mask at a predetermined position. The mask is disposed at a position between the mounting substrate and the electrode facing the mounting substrate so as to cover a region where plasma processing is not desired on the processing mounting substrate. The mask support may include a movable part for adjusting the distance between the mask and the mounting member on the mounting substrate.

  In a preferred embodiment, the region where plasma processing is not desired on the processing target mounting substrate is a region where a mounting member is mounted.

  In a preferred embodiment, the mask has an opening corresponding to the region so that only the region desired to be cleaned or modified by plasma processing of the mounting substrate is subjected to the plasma processing.

  In a preferred embodiment, the mask has a flat plate shape.

  In a preferred embodiment, the mask material is an insulating material.

  In a preferred embodiment, the mask is not in contact with a mounting member on the mounting substrate.

  In a preferred embodiment, the mask is supported so that the distance between the mask and the mounting member on the mounting substrate is within 5 mm.

  In a preferred embodiment, the mask is supported so that the distance between the mask and the mounting member on the mounting substrate is within 3 mm.

  In a preferred embodiment, the mask support is not in contact with any of the electrodes.

  In another aspect, the present invention provides a method for cleaning or modifying a mounting substrate by plasma treatment.

  A plasma processing method for cleaning or modifying a mounting substrate according to the present invention includes a step of placing the mounting substrate on any one of the electrodes in the plasma processing apparatus, the mask, and the mounting substrate. A step of setting a distance between the mask and the mounting member on the mounting substrate so that abnormal discharge does not occur between the upper mounting member, and applying high frequency power to the electrode to plasma the mounting substrate. And a process of applying treatment.

  In a preferred embodiment, the distance between the mask and the mounting member on the mounting substrate is set to be larger than 0 mm and within 5 mm.

  In a preferred embodiment, the distance between the mask and the mounting member on the mounting substrate is set to be larger than 0 mm and within 3 mm.

  Thus, according to the plasma processing method and apparatus of the present invention, the components mounted on the mounting substrate are effectively protected from the irradiation of plasma ion particles, thereby causing the deterioration of the components and the flow of the underfill material and the like. Can be prevented. In particular, by using a mask having an opening only in a portion corresponding to a region desired to be cleaned or modified by plasma processing on the surface of the mounting substrate, the substrate surface that does not require surface modification by plasma processing is effectively protected. be able to.

  In addition, the mask 27 can be easily adjusted to an appropriate position by using a position adjustment mechanism such as a fixed support rod 28 that supports the mask 27 and an air cylinder 29 that adjusts the length thereof. Further, it can easily cope with automation of operation.

  Further, the mask supporting column and the counter electrode are not integrated, and the mask 27 is supported by the fixed support rod 28 so as not to contact either the counter electrode 7 or the high-frequency electrode 5 as shown in FIG. Thus, as schematically shown in FIG. 3, normal and uniform (unbiased) plasma can be generated between the substrate and the counter electrode.

  Furthermore, by setting the distance between the opposing surfaces of the mask and the chip component of the mounting substrate within a predetermined range, abnormal discharge occurring between them can be prevented.

(Embodiment 1)
First, in the plasma processing apparatus disclosed in FIGS. 1 to 3 of Patent Document 2, the shape of the cover body was considered to be a shape like the mask disclosed in FIG. 4 of Patent Document 2.

  As a result, as shown in FIG. 7 of the present application, in the structure in which the cover body 20 and the counter electrode 7 are integrated via the support column 19, discharge should originally occur only between the substrate 6 and the counter electrode 7. However, electric discharge is likely to occur between the substrate 6 and the support column 19. In such a case, the discharge in the reaction chamber is biased (see the arrow in FIG. 7), which may cause a problem that uniform plasma treatment of the substrate surface cannot be performed. Furthermore, in the structure that is integrated as described above and has no movable part, the distance between the cover body 20 and the high-frequency electrode 5 is determined at the time of manufacture of the device, and depends on the thickness of each substrate at the time of use. Therefore, there is a problem that the distance between the cover body 20 and the high-frequency electrode 5 cannot be easily adjusted. In view of this, a configuration of a plasma processing apparatus that does not cause such discharge bias and can easily adjust the distance between the mask and the high-frequency electrode (or the mask and the substrate) at the time of use has been studied.

  Hereinafter, such embodiments of the present invention will be described with reference to FIGS. 1 to 3, the same components as those of the conventional apparatus shown in FIGS. 4 to 6 are denoted by the same reference numerals, and the description thereof is omitted.

  FIG. 1 is a schematic configuration diagram of a plasma processing apparatus according to an embodiment of the present invention.

  In addition to the components of the plasma processing apparatus of FIG. 4, the plasma processing apparatus according to an embodiment of the present invention shown in FIG. 1 has a lid 26 that opens and closes when the mounting substrate 6 is taken in and out of the reaction chamber 1. A mask 27 for protecting a part of the mounting substrate from irradiation of ion particles, a fixed support rod 28 for supporting the mask 27, and a part of the reaction chamber 1 wall so as to penetrate the exterior of the reaction chamber 1. And a plunge 30 (O-ring is used to prevent vacuum leakage of the reaction chamber 1 by sealing the portion where the fixed support rod 28 passes through the reaction chamber 1 and extends from the inside to the inside. (Not shown). The mask 27 is usually made of a material that does not easily cause a discharge, such as alumina (AL2O3). The air cylinder 29 supports the fixed support rod 28 and adjusts the position of the mask 27 fixed to the fixed support rod 28 by adjusting the length of the portion where the fixed support rod 28 protrudes from the air cylinder 29. belongs to. When the mounting substrate 6 is placed on the high-frequency electrode 5, the fixed support rod 28 is extended by the action of the air cylinder 29, the space between the mask 27 and the high-frequency electrode 5 is expanded, and the mounting substrate 6 is mounted on the high-frequency electrode 5. To be placed on top. After the mounting substrate 6 is placed on the high-frequency electrode 5, the fixed support rod 28 is contracted again by the operation of the air cylinder 29, and the mask 27 is brought close to an appropriate distance from the mounting substrate 6.

  FIG. 2A is an enlarged cross-sectional view of the mounting substrate 6, the mask 27, and the mask support plate 35. In FIG. 2A, Dm indicates the operating direction of the mask 27 when the fixed support rod 28 attached perpendicularly to the mask 27 is operated by the air cylinder 29 as shown in FIG. As shown in FIG. 1, De is a discharge between both electrodes when the high frequency electrode 5 and the counter electrode 7 are arranged in parallel with the surface of the mounting substrate 6 on which the mounting component is placed and high frequency power is applied. Indicates the direction. FIG. 2B is a top view of the mask 27 and the mask support plate 35 shown in FIG. The mask support plate 35 is usually made of an insulating material similar to the mask 27. Further, the mask 27 usually has a size that can cover the entire mounting substrate, has a substantially flat plate shape, and has an opening corresponding only to a region where plasma processing of the mounting substrate is desired. The size, shape, thickness, and the like of the mask 27 can vary depending on the purpose of the plasma processing, the size of the mounting substrate to be plasma processed, the arrangement pattern of the mounting components to be protected from the plasma processing, and the like. 2 (a) and 2 (b), the configuration composed of two components of the mask 27 and the mask support plate 35 is shown. However, the configuration need not necessarily consist of the two components of the mask support plate 35 and the mask 27. Alternatively, the support plate and the mask may be integrated into one component.

  As shown in FIG. 2A, the chip component 14 is mounted on the mounting substrate 6. Furthermore, an electrode 10 for bonding a bare IC (not shown) is disposed on the mounting substrate 6. The mask 27 is provided with an opening 33 for irradiating the electrode 10 with ion particles, and a recess 34 is formed so as to fit the shape of the chip component 14. The inner side of the dotted square in FIG. 2B corresponds to a region where the recess 34 is provided (a region where components are mounted). The depression 34 is not necessarily required, and may be a flat mask without a depression. Further, the shape, number, size, and the like of the opening 33 can be changed according to the circuit pattern of the mounting substrate to be plasma-processed, the arrangement pattern of the chip components, and the like. A procedure for cleaning the mounting substrate 6 with plasma in the cleaning processing apparatus configured as described above will be described below.

First, the lid 26 is opened, and the mask 27 is slid by the operation of the air cylinder 29 to widen the space between the high frequency electrode 5 and the mask 27, and then the mounting substrate 6 is placed on the high frequency electrode 5. Next, the air cylinder 29 is operated again, the mask 27 is slid so as to approach the mounting substrate 6, and the chip component 14 and other portions where plasma processing is not desired are covered with the mask 27. Next, the lid 26 is closed, and the reaction chamber 1 is evacuated from the vacuum exhaust port 3. Plasma is generated by applying a high frequency of 200 W to the high-frequency electrode 5 while maintaining the degree of vacuum in the reaction chamber 1 at 30 Pa while flowing 10 SCCM of argon gas from the reaction gas inlet 3. The surface of the mounting substrate 6 is irradiated with argon ions present in the plasma, so that nickel hydroxide or the like deposited on the gold layer of the electrode of the mounting substrate 6 through a thermal process or the like is sputtered by the irradiation of argon ions. And the surface of the gold layer is cleaned. On the other hand, the chip component 14 on the mounting substrate 6 and other portions of the substrate that do not require plasma processing are protected from ion particle irradiation by the mask 27.

  In this way, according to the plasma processing apparatus of the present invention, it is possible to protect the component mounted on the mounting substrate from plasma ion particle irradiation, thereby preventing the deterioration of the component and the flow of the underfill material. it can. Further, by using a system such as a fixed support rod 28 for supporting the mask 27 and an air cylinder 29 for adjusting the length of the mask 27, the mask 27 can be easily adjusted to an appropriate position. Setting to the processing apparatus is easy, and automation of operations can be easily handled. In addition, since it is possible to easily cope with the difference in thickness of each mounting board and the size of mounting parts, it is possible to easily avoid a situation in which the board is pressed and damaged by the mask 27. is there.

  Further, the mask supporting column and the counter electrode are not integrated, and the mask 27 is supported by the fixed support rod 28 so as not to contact either the counter electrode 7 or the high-frequency electrode 5 as shown in FIG. Thus, as schematically shown in FIG. 3, normal and uniform (unbiased) plasma can be generated between the substrate and the counter electrode.

  In the present embodiment, the configuration in which one side of the mask 27 is supported by one fixed support rod 28 is not intended to be limited to this, and a configuration in which both ends of the mask are supported by a plurality of fixed support rods may be used. Further, if necessary, by using a shock absorber together with the air cylinder 29, even if the mask 27 comes into contact with the mounting substrate 6 during operation, damage due to the mask 27 can be prevented to the maximum.

  In the present embodiment, argon gas is used as the processing gas. However, the type of gas is not limited to this, and other gases for plasma processing such as oxygen and nitrogen can be used as well.

  The material of the mask 27 is not limited to alumina (Al2O3), and other insulating substances such as quartz glass (SiO2) and polyimide resin can be used.

  In the present embodiment, the position of the mask 27 is adjusted by the operation of the air cylinder 29 via the indicator rod 28. However, the present invention is not intended to be limited to such a mechanism. The method can of course also be used. Further, the direction in which the mask 27 is operated is not limited to the direction perpendicular to the high-frequency electrode or the counter electrode, and may be operated at various angles and orientations as long as the mask 27 is set at an appropriate position during plasma processing. It will be apparent to those skilled in the art. Furthermore, although the air cylinder 29 was provided in the exterior of the reaction chamber 1 and the fixed support rod 28 penetrated the reaction chamber 1 in the above embodiment, this is not intended to limit to such a configuration. An appropriate position adjusting mechanism that operates even under reduced pressure may be provided inside the reaction chamber 1.

  In the above embodiment, the configuration in which the mounting substrate 6 is mounted on the high-frequency electrode 5 has been described. However, depending on the arrangement of the high-frequency electrode 5 and the counter electrode 7, the mounting substrate 6 is mounted on the counter electrode 7. It is good also as a structure to set.

(Embodiment 2)
Further, the present inventors perform the plasma treatment of the mounting substrate as in the first embodiment, and depending on the distance between the opposing surfaces of the mask 27 and the chip component 14, It has been found that abnormal discharge occurs between the electrodes and between the mask and the electrodes or wirings on the mounting substrate, which may adversely affect the parts to be protected from ion irradiation and the substrate surface. This is because the electric field tends to concentrate on the mounting parts, the electrodes, the wirings, and the like on the substrate mainly because they are made of metal and the shape is angular. In the present specification, the term “abnormal discharge” means that a discharge that should occur only between a high-frequency electrode or a mounting substrate (including a mounting component) mounted on the high-frequency electrode and the counter electrode is a mounting component on the mounting substrate. It means discharge that also occurs between an electrode or wiring (in the present specification, these are collectively referred to as a “mounting member”) and the mask. When abnormal discharge occurs, sparks may be generated on the wiring and electrodes of the substrate, resulting in blackening. In that case, since the wiring becomes thin and the reliability as a line is lowered, and the current density is further increased, problems such as the occurrence of wiring disconnection may occur.

  Therefore, at the time of plasma processing of the mounting substrate, it is required to set the distance between the mask and the mounting member on the mounting substrate to an optimum distance so as not to cause abnormal discharge. As shown in FIG. 1, the present invention includes a mask position adjusting mechanism such as a fixed support rod 28 and an air cylinder 29, so that the distance between the mask and the mounting member can be set to an optimum distance. It is. In this specification, when “the distance between the mask and the mounting member on the mounting substrate” or simply “the distance between the mask and the mounting substrate” is used, the mounting on the mask 27 and the mounting substrate 6 is usually performed. It means the distance d1 (see FIG. 2A) between the facing surfaces of the members. When the mask has a depression 34 as shown in FIG. 2, the distance d2 between the inner wall surface of the mask 27 that defines the depression 34 and the side surface of the mounting member facing the depression (FIG. 2). (See (a)) also needs to be considered as the distance between the mask and the mounting member on the mounting substrate.

  The optimum distance between the mask and the mounting member on the mounting substrate so as not to cause abnormal discharge between the mask and the mounting member during the plasma processing can be obtained as follows.

  First, according to the procedure described in the second embodiment, the distance between the mask 27 and the component 14 on the mounting board was set to various distances, and the plasma processing of the mounting board was performed. As a result, under normal plasma processing conditions (for example, high-frequency power of less than about 1.5 W / cm 2 and apparatus internal pressure of about 5 to about 80 Pa), when an insulator such as alumina is used as the mask material, the mask 27 It was found that the abnormal discharge between the mask 27 and the chip component 14 can be prevented if the distance between the surface of the chip component 14 and the surface of the chip component 14 facing the surface is within 5 mm. The distance between the opposing surfaces of the mask 27 and the chip component 14 should be as short as possible. Under normal plasma processing conditions, it should normally be within 5 mm, more preferably within 4 mm, even more preferably within 3 mm, and even more preferably. Should be set within 2 mm, most preferably within 1 mm. However, the optimum distance between the surface of the mask 27 and the surface of the chip component 14 so as not to cause abnormal discharge is Paschen's law (Hiroo Kumagai and Goro Tominaga, “Physics and Application of Vacuum” According to 1970, p.209), the voltage can be changed depending on the applied voltage, the pressure in the apparatus, the material of the mask, and the like. A person skilled in the art can determine the optimum distance between the opposing surfaces of the mask 27 and the chip component 14 so as not to cause abnormal discharge in accordance with such a change in conditions. For example, when a conductor such as a metal (for example, aluminum (Al), stainless steel (SUS), etc.) is used as a mask material, abnormal discharge is more likely to occur than when an insulator is used. It is preferable that the distance between the facing surfaces of the component 14 is usually set to be smaller than 5 mm.

When the distance between the facing surfaces of the chip component 14 and the mask 27 is 0 mm (that is, when the chip component 14 and the mask 27 are in contact), the high frequency power applied to the high frequency electrode 5 is the mask. 27 and the fixed indicator rod 28, the short circuit occurs, so at least the distance needs to be greater than 0 mm.

  As described above, the plasma processing apparatus of the present invention includes the mask position adjustment mechanism (for example, the fixed support rod 28 and the air cylinder 29), so that the distance between the mask and the mounting member on the mounting substrate is optimized. Can be adjusted to the position. Of course, the mask position adjustment mechanism for this purpose is not limited to that of the present embodiment.

  Although the embodiments of the present invention have been described with reference to the drawings, the scope of the present invention is not limited to these embodiments, and various changes and modifications can be made within the scope of the invention described in the claims. It will be apparent to those skilled in the art that this is possible.

  Since the plasma processing method and the processing apparatus according to the present invention can appropriately protect components mounted on the mounting substrate and other parts that do not require plasma processing from ion particle irradiation of the plasma, It is useful as a method or apparatus for performing processing such as cleaning and modification by plasma processing.

1 is a schematic configuration diagram of a plasma processing apparatus according to an embodiment of the present invention. Schematic sectional view ((a)) and top view ((b)) of a mask and a mounting substrate in a plasma processing apparatus according to an embodiment of the present invention. Schematic sectional view of plasma generation in a plasma processing apparatus according to an embodiment of the present invention (arrows indicate the state of generated plasma) Schematic configuration diagram of a conventional plasma processing apparatus Typical cross section of general substrate electrode Schematic of a series of processing procedures in a conventional method for mounting a bare IC Schematic cross-sectional view of plasma generation when counter electrode and mask are integrated (arrows indicate the state of generated plasma)

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Reaction chamber 2 ... Reaction gas introduction port 3 ... Vacuum exhaust port 5 ... High frequency electrode 6 ... Mounting substrate 7 ... Counter electrode 8 ... High frequency power supply 26 ... Cover 27 ... Mask 28 ... Fixed support rod 29 ... Air cylinder 30 ... Plunge 33 ... Opening 34 ... Recess 35 ... Mask support plate

Claims (11)

A plasma processing apparatus for cleaning or modifying a mounting substrate surface,
A reaction chamber for performing plasma treatment;
A first electrode provided in the reaction chamber for applying high-frequency power;
A second electrode provided in the reaction chamber facing the first electrode for generating plasma with the first electrode;
A mask for shielding a region of the mounting substrate to be processed, which is supported by one of the electrodes, from which plasma processing is not desired, from the plasma irradiation, and faces the mounting substrate so as to cover the region. A mask disposed at a position between the electrodes;
An apparatus comprising: a mask support for positioning the mask at the position, the mask support including a movable part for adjusting a distance between the mask and the mounting substrate.   The apparatus according to claim 1, wherein the region on which the plasma processing is not desired on the substrate to be processed is a region where a mounting member is mounted.   The apparatus according to claim 1, wherein the mask is a flat plate having an opening corresponding to the region so that only the region where the plasma treatment of the mounting substrate is desired is subjected to the plasma treatment.   The apparatus according to claim 3, wherein a material of the mask is an insulating material.   The apparatus according to claim 2, wherein the mask is not in contact with the mounting member.   The apparatus according to claim 5, wherein the mask is supported so that a distance between the mask and the mounting member is within 5 mm.   The apparatus according to claim 5, wherein the mask is supported so that a distance between the mask and the mounting member is within 3 mm.   The apparatus of claim 1, wherein the mask support is not in contact with any of the electrodes. A reaction chamber for performing plasma treatment;
A first electrode provided in the reaction chamber for applying high-frequency power;
A second electrode provided in the reaction chamber facing the first electrode for generating plasma with the first electrode;
A mask for shielding an area where plasma processing is not desired on a substrate to be processed supported by any of the electrodes from the plasma irradiation, and facing the mounting substrate so as to cover the area A mask disposed at a position between the electrode and
In the plasma processing apparatus, comprising: a mask support for disposing the mask at the position, the mask support including a movable part for adjusting a distance between the mask and the mounting substrate. A method for cleaning or modifying a mounting board,
Placing the mounting substrate on one of the electrodes;
Setting a distance between the mask and the mounting member on the mounting substrate so that abnormal discharge does not occur between the mask and the mounting member on the mounting substrate;
Applying high frequency power to the electrode and subjecting the mounting substrate to plasma treatment.   The method according to claim 9, wherein a distance between the mask and the mounting member on the mounting substrate is set to be larger than 0 mm and within 5 mm. The method according to claim 9, wherein a distance between the mask and the mounting member on the mounting substrate is set to be larger than 0 mm and within 3 mm.

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