JP2005122153A - Resist form pattern, method for forming resist pattern, method for manufacturing master information carrier, method for manufacturing magnetic recording medium, method for manufacturing magnetic recording and reproducing apparatus, and magnetic recording and reproducing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve problems occurring in processes that a resist can not be separated from a photomask after aligning or peeling of the resist is caused in a method carried out by forming various heights in a resist and then tightly sticking a photomask to a wafer by evacuation for forming a fine pattern by using a mask aligner. <P>SOLUTION: The resist surface except for a pattern forming region is preliminarily exposed and developed to be roughened so as to reduce the contact area between the photomask and the resist. This processing decreases adhesiveness and improves release property after aligning. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a resist pattern forming method and a method of manufacturing a master information carrier used for recording a digital information signal on a magnetic recording medium.

At present, the magnetic recording / reproducing apparatus tends to have a high recording density in order to realize a compact and large-capacity apparatus. In the field of hard disk drives, which are typical magnetic recording / reproducing devices, devices having a surface recording density exceeding 93 Mbit / mm ² have already been commercialized, and at present, devices having a surface recording density of 155 Mbit / mm ² are in practical use. As a result, the technological progress is as rapid as expected.

  The technical background that has made it possible to increase the recording density is to improve the performance of the magnetic recording medium and the head / disk interface and to improve the linear recording density by the emergence of a new signal processing method such as partial response. . However, in recent years, the increasing tendency of track density has greatly exceeded the increasing tendency of linear recording density, which is a main factor for improving the surface recording density.

  This is due to the practical application of a thin film magnetic head using a magnetoresistive effect element (MR element) or a giant magnetoresistive effect element (GMR element), which has much better reproduction output performance than a conventional induction type magnetic head. is there. At present, with the practical use of GMR heads, it is possible to reproduce a track width signal of 1 μm or less with a high S / N ratio. On the other hand, with further improvement in head performance in the future, it is expected that the track pitch will be further reduced.

  Now, in order for the magnetic head to accurately scan such a narrow track and reproduce the signal with good S / N, the magnetic head tracking servo technique plays an important role. Regarding such tracking servo technology, for example, Non-Patent Document 1 shows detailed contents. According to Non-Patent Document 1, in the current hard disk drive, a tracking servo signal, an address information signal, a reproduction clock signal, etc. are recorded at a constant angular interval during one round of the disk, that is, at an angle of 360 degrees. An area is provided (hereinafter referred to as “preformat”).

  By reproducing these signals at regular intervals, the magnetic head can accurately scan the track while confirming and correcting the position of the head. The tracking servo signal, the address information signal, the reproduction clock signal, etc. described above serve as reference signals for the head to accurately scan the track, so that accurate positioning accuracy is required at the time of recording. . For example, according to the contents described in Non-Patent Document 2, in the current hard disk drive, after the disk is incorporated in the drive, preformat recording is performed by a magnetic head whose position is strictly controlled using a dedicated servo recording device. It has been broken.

  Conventionally, preformat recording of a servo signal, an address information signal, and a reproduction clock signal by a magnetic head using the dedicated servo recording apparatus as described above has the following problems.

  First, recording by the magnetic head is basically linear recording based on relative movement between the head and the medium. For this reason, the above-described method of recording while strictly controlling the position of the magnetic head using a dedicated servo recording apparatus requires a lot of time for preformat recording, and the dedicated servo recording apparatus is considerably expensive. For this reason, the cost is very high.

  Secondly, due to the spread of the recording magnetic field due to the head-medium spacing and the pole shape of the recording head, the transition of magnetization at the track end portion where the preformat recording is performed is steep. Current tracking servo technology detects the position of the head based on the amount of change in reproduction output when the head scans off the track.

  Therefore, the signal track recorded in the preformat has not only excellent S / N when the head accurately scans the track as in the case of reproducing the data information signal recorded between the servo areas, but also the head It is required that the amount of change in reproduction output when scanning is off track, that is, the off-track characteristic is steep.

  The above problems are contrary to this requirement, and it is difficult to realize accurate tracking servo technology in future submicron track recording.

  As a means for solving the problem of preformat recording by the magnetic head as described above, the surface of the master information carrier on which the ferromagnetic thin film pattern corresponding to the preformat information signal is formed on the surface of the substrate is used as the magnetic recording medium. A technique for recording a magnetic pattern corresponding to a ferromagnetic thin film pattern on a magnetic recording medium by magnetizing the ferromagnetic thin film pattern formed on the master information carrier after contacting the surface of the magnetic recording medium has been proposed (Patent Literature). 1).

  According to this preformat recording technique, good preformat recording can be performed efficiently without sacrificing other important performances such as the S / N ratio and interface performance of the recording medium.

  On the other hand, the ferromagnetic thin film pattern formed on the master information carrier is required to have a finer pattern as the density of the hard disk increases. High integration of a semiconductor integrated circuit (LSI) requires development of a high-density pattern forming technique and resist material in photolithography, but the same development is also required for high-density master information carrier.

  As a photolithography apparatus, a mask aligner or a stepper is used, and as the pattern becomes finer, the wavelength of the light source becomes shorter, such as g-line (436 nm), i-line (365 nm), and excimer laser light (248 nm). It has shifted to the wavelength side. On the other hand, a resist material suitable for the exposure wavelength has been developed.

  For steppers that require high-precision shot stitching, a mask aligner that can perform batch exposure on the entire surface of the wafer is inexpensive and is often used for thin-film component devices other than LSI. However, the mask aligner has a lower pattern resolution than the stepper and is generally not suitable for forming a fine pattern of submicron order. As a countermeasure against this, as disclosed in Patent Document 2, there is a method in which a resist provided with a step and a photomask are brought into contact with each other, evacuated, and then exposed. According to this method, since there is no gap between the resist and the photomask, the adhesion between the resist and the photomask is improved. For this reason, a high-resolution pattern can be obtained also in the mask aligner.

  In the above method using the master information carrier, the pattern arrangement of the ferromagnetic thin film corresponding to the digital information signal formed on the master information carrier is preformat recorded on the magnetic recording medium. Therefore, in order to obtain good magnetic signal characteristics, it is necessary that the pattern of the ferromagnetic thin film formed on the master information carrier be formed with high accuracy.

  FIG. 6A to FIG. 6D are cross-sectional views showing the resist pattern forming method disclosed in Patent Document 2. FIG. FIG. 9 is a plan view schematically showing the relationship between the convex portions of the resist film, the evacuation concave portions, and the resist concave portions. 6A to 6D correspond to cross-sectional views taken along the line CC ′ of FIG.

  FIG. 6A shows an exposure process for forming a bleed recess, and FIG. 6B shows a state after the evacuation recess is formed. As shown in FIG. 6A, a region other than the pattern formation region on the resist film 2 coated on the substrate 1 is exposed with UV light 4 through a photomask 3 and then developed. As a result, as shown in FIG. 6B, a venting recess 251 and a resist film protrusion 252 are formed on the surface of the resist film 2.

FIG. 6C shows an exposure process for pattern formation, and FIG. 6D shows a state after pattern formation. As shown in FIG. 6C, the photomask 31 is brought into contact with the convex portion 252 of the resist film, and evacuation is performed along the direction indicated by the arrow 7 through the venting concave portion 251. This enhances the adhesion between the photomask 31 and the convex portion 252 of the resist film. In this state, the UV light 4 is used to irradiate an exposure amount for realizing the target line width of the resist, and then development is performed. As shown in FIG. 6 (d), the resist concave portion is formed on the convex portion 252 of the resist film. A place 21 is formed.
Japanese Patent Laid-Open No. 10-40544 JP 2003-029424 A Yamaguchi, “High-precision servo technology for magnetic disk drives”, Journal of Applied Magnetics Society of Japan, Vol. 20, no. 3, pp. 771, (1996) Uematsu, et al. “Current Status and Prospects of Mecha-Servo and HDI Technology”, Japanese Society of Applied Magnetics, 93rd Research Material, 93-5, pp. 35 (1996)

  In the above method using the master information carrier, the shape and pattern arrangement of the ferromagnetic thin film corresponding to the digital information signal formed on the master information carrier are preformat recorded on the magnetic recording medium. Therefore, in order to obtain good magnetic signal characteristics, it is necessary that the pattern of the ferromagnetic thin film formed on the master information carrier be formed with high accuracy.

  However, in order to stably form a finer resist pattern using a mask aligner, the conventional method has the following problems.

  When the vacuuming 7 is strengthened to improve the adhesion between the photomask 31 and the substrate 1 (including the resist film) as shown in FIG. 7A, a distortion 255 is applied to the photomask 31 as shown in FIG. Occurs. For this reason, a gap 8 is formed in the convex portion 252 of the resist film, which is a pattern formation region, and there is a problem that when exposed, UV light wraps around and it becomes difficult to form a fine pattern. Although FIG. 7 shows the case where distortion occurs in the photomask, the same problem occurs when distortion occurs in the substrate. In addition, stress concentrates on the edge of the convex portion 252 of the resist film that comes into contact with the photomask, which may cause distortion of the resist film and affect the pattern shape.

  As a countermeasure, as shown in FIG. 8A, the convex portions 252 of the resist film are widened, or as shown in FIG. 8B, the number of convex portions 252 of the resist film is increased. Thus, there is a method of reducing the distortion 255 of the photomask.

  However, in this case, the contact area between the photomask 31 and the resist film 2 is increased, and there is another process problem that the substrate 1 (including the resist film) and the photomask 31 are attached after exposure. When the substrate 1 and the photomask 31 are forcibly separated from each other, the convex portions 252 of the resist film are peeled off, resulting in defects such as defects in the pattern of the ferromagnetic thin film formed on the master information carrier or deterioration in accuracy. .

  In view of the above, the present invention provides a resist pattern forming method that makes it possible to more stably form a finer pattern using a mask aligner, particularly a master information carrier for preformat recording a digital information signal. An object of the present invention is to provide a method for producing a master information carrier capable of forming a pattern with high accuracy.

  In order to achieve the above object, the structure of the present invention comprises a resist film coated on the substrate surface, a region having a smooth surface, a region having a larger surface roughness than the region having a smooth surface, and a recess for venting. A resist shape pattern having a formed region, wherein the photomask is adhered to the surface of the resist film by evacuating the resist film in a state where the photomask is overlaid on the resist film. And a step of exposing a required pattern.

  In the pattern forming method of the present invention, the resist film applied to the substrate surface has a smooth surface region, a region having a larger surface roughness than the smooth surface region, and a region in which a venting recess is formed. The first method of forming the resist film includes a step of forming a resist film on the surface of the substrate, and exposing and developing a first region that constitutes a part of the pattern non-formation region of the resist film, thereby developing the resist film. A step of increasing the surface roughness and a step of forming a recess for venting on the surface of the resist film by exposing and developing the second region excluding the first region of the pattern non-formation region of the resist film. It is characterized by having.

  In the pattern forming method of the present invention, the resist film applied to the substrate surface has a smooth surface region, a region having a larger surface roughness than the smooth surface region, and a region in which a venting recess is formed. The second method of forming the resist film includes a step of forming a resist film on the surface of the substrate, and exposing and developing the first region constituting a part of the pattern non-formation region of the resist film. The surface roughness of the resist film is increased by exposing and developing the second region excluding the first region of the resist film pattern non-formation region and the step of forming a recess for venting on the surface of the resist film. And a process.

  In the pattern forming method of the present invention, the resist film applied to the substrate surface has a smooth surface region, a region having a larger surface roughness than the smooth surface region, and a region in which a venting recess is formed. A third method of forming a resist film on the surface of the substrate, a first exposure process of exposing a pattern non-formation region of the resist film, and a part of the pattern non-formation region of the resist film And a second region exposed in the second exposure step of the first region exposed in the first exposure step by developing the resist film. A step of increasing the surface roughness of the resist film in a portion excluding the common portion, and forming a recess for venting in the common portion with the second region.

  In the pattern forming method of the present invention, the resist film applied to the substrate surface has a smooth surface region, a region having a larger surface roughness than the smooth surface region, and a region in which a venting recess is formed. A fourth method of forming a resist film includes a step of forming a resist film on a surface of a substrate, a first exposure step of exposing a part of a non-patterned region of the resist film, and a non-patterned region of the resist film. And a first region exposed in the first exposure step among the second regions exposed in the second exposure step by developing the resist film, And a step of increasing the surface roughness of the resist film in a portion excluding the common portion, and forming a recess for venting in the common portion with the first region.

  The first master information carrier manufacturing method of the present invention includes a step of forming a resist film on the surface of a nonmagnetic substrate, a region having a smooth surface on the resist film, and a surface roughness higher than that of the region having a smooth surface. Of the resist film by evacuating through the venting recesses in a state where a large area and a venting recessing region are formed, and a photomask is superimposed on the resist film. A step of bringing a convex portion and the photomask into close contact with each other, and a resist recess corresponding to the required digital information signal pattern by exposing and developing a required digital information signal pattern with respect to a pattern formation region on the resist film surface; Forming and exposing the surface of the non-magnetic substrate at the bottom of the resist recess, and exposing and developing the required digital information signal pattern. A step of depositing a ferromagnetic thin film on the surface of the nonmagnetic substrate exposed through the surface and the resist recess, and exposing the required digital information signal pattern to the resist film after developing the required digital information. Removing the signal pattern together with the ferromagnetic thin film deposited on the resist film surface after exposure and development to form a ferromagnetic thin film pattern corresponding to the required digital information signal pattern on the non-magnetic substrate surface A method for producing a master information carrier, comprising:

  The second master information carrier manufacturing method of the present invention comprises a step of forming a resist film on the surface of a nonmagnetic substrate, a region having a smooth surface on the resist film, and a surface roughness higher than that of the region having a smooth surface. Of the resist film by evacuating through the venting recesses in a state where a large area and a venting recessing region are formed, and a photomask is superimposed on the resist film. A step of bringing a convex portion and the photomask into close contact with each other, and a resist recess corresponding to the required digital information signal pattern by exposing and developing a required digital information signal pattern with respect to a pattern formation region on the resist film surface; Forming and exposing the surface of the non-magnetic substrate to the bottom of the resist recess, and exposing and developing the required digital information signal pattern. Etching using a mask to form a substrate recess corresponding to the required digital information signal pattern on the surface of the nonmagnetic substrate exposed through the resist recess, and the resist film surface remaining after the etching and The step of depositing a ferromagnetic thin film in a state of being embedded in the base recess with respect to the base recess, and the etching of the resist film remaining after the etching in a state of leaving the ferromagnetic thin film embedded in the base recess And removing the ferromagnetic thin film deposited on the remaining resist film surface later to form a ferromagnetic thin film pattern corresponding to the required digital information signal pattern on the surface of the non-magnetic substrate. A method for manufacturing a master information carrier.

  The third master information carrier manufacturing method of the present invention comprises a step of depositing a ferromagnetic thin film on the surface of a nonmagnetic substrate, a step of forming a resist film on the surface of the nonmagnetic substrate, and a smooth surface on the resist film. And forming a region having a surface roughness greater than that of the region having a smooth surface and a region in which a recess for venting is formed, and the photomask is overlaid on the resist film. A step of bringing the photomask into close contact with the surface of the resist film by evacuating through a concave portion for exposure; and a resist having a required pattern by exposing and developing a required pattern in the region of the convex portion of the resist film. Forming a recess, exposing the ferromagnetic thin film to the bottom of the resist recess, etching using the resist film after the required pattern exposure as a mask, and passing through the resist recess Removing the exposed portion of the ferromagnetic thin film, and removing the resist film remaining after the etching to form a ferromagnetic thin film pattern corresponding to a required digital information signal on the surface of the nonmagnetic substrate. A method for producing a master information carrier, comprising:

  The method of manufacturing a magnetic recording medium according to the present invention includes a step of manufacturing a master information carrier in which a ferromagnetic thin film pattern corresponding to a required digital information signal is formed on a nonmagnetic substrate; A method of manufacturing a magnetic recording medium, comprising: applying an external magnetic field in a state of being opposed to a surface and recording magnetization information corresponding to the ferromagnetic thin film pattern on the magnetic recording medium. The step of manufacturing includes a step of forming a resist pattern for forming the ferromagnetic thin film pattern, and the step of forming the resist pattern includes a step of forming a resist film on the surface of a nonmagnetic substrate, and the resist Forming a region having a smooth surface on the film, a region having a surface roughness larger than that of the region having a smooth surface, and a region in which a venting recess is formed. In a state where a photomask is overlaid on the resist film, a step of bringing the photomask into close contact with the surface of the resist film by evacuating through the evacuation recess, and a step of exposing a required pattern A method for manufacturing a magnetic recording medium, comprising:

  The method of manufacturing a magnetic recording / reproducing apparatus of the present invention is a method of manufacturing a magnetic recording / reproducing apparatus including the method of manufacturing the magnetic recording medium, wherein the magnetic information in which magnetization information corresponding to the shape pattern of the ferromagnetic thin film is recorded. A step of mounting the recording medium on the rotating portion is provided.

  The magnetic recording / reproducing apparatus of the present invention includes a magnetic recording medium manufactured by the method for manufacturing a magnetic recording medium, a thin film magnetic head, a support member that supports the thin film magnetic head so as to face the magnetic recording medium, Rotating means for rotating the magnetic recording medium; moving means coupled to the support member for moving the thin film magnetic head along the film surface of the magnetic recording medium; the thin film magnetic head; the rotating means; and the moving means And processing means for exchanging signals with the thin film magnetic head, controlling rotation of the magnetic recording medium, and controlling movement of the thin film magnetic head.

  According to the present invention, the adhesion between the photomask and the resist in the pattern formation region where the resist surface is smooth is improved, and the surface other than the pattern formation region on the resist surface is rough or is a recess for venting. Good separation after exposure can be realized. As a result, resist peeling or the like does not occur, and a good resist pattern can be formed in the pattern formation region on the resist surface.

  According to the pattern forming method using the resist shape pattern of the present invention, it is possible to greatly reduce the distortion of the photomask due to evacuation through the evacuation recess, and the photomask and the resist in the smooth pattern forming region on the resist surface. Improved adhesion. Further, since the surface is rough except for the pattern formation region on the resist surface, the effective contact area of the portion with the photomask is very small, and the substrate and the photomask can be easily separated after exposure. . As a result, resist peeling or the like does not occur, and a good resist pattern can be formed in the pattern formation region on the resist surface.

  Also, by using the resist pattern forming method of the present invention, a master information carrier having a fine digital information signal pattern can be produced with high accuracy and stability.

  According to the method for manufacturing a magnetic recording medium, the method for manufacturing a magnetic recording / reproducing apparatus, and the magnetic recording / reproducing apparatus of the present invention, the accuracy of the digital information signal transferred from the master information carrier to the magnetic recording medium can be increased. It is advantageous for capacity increase.

  In the magnetic recording medium manufacturing method and magnetic recording / reproducing apparatus, the digital information signal is preferably a signal for use in tracking servo.

  According to this configuration, since the tracking servo signal magnetization reversal length transferred and recorded on the magnetic recording medium is reduced, the positioning accuracy in the track width direction is improved, which is advantageous for increasing the capacity. In addition, cost reduction can be realized.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

(Embodiment 1)
1 and 2 are diagrams showing a resist shape pattern according to the first embodiment.

  FIG. 1A is a plan view schematically showing the structure of the resist shape pattern of the first embodiment, and FIG. 1B is a cross-sectional view taken along line A-A ′ of FIG.

  The surface of the resist 2 applied on the substrate 1 is composed of a venting recess 251 and a resist film projection 252, and the resist film projection 252 has a pattern formation region 254 with a smooth resist surface and a rough resist surface. The region 253 is configured.

  2A is a plan view schematically showing a state in which a required pattern is formed using the resist shape pattern shown in FIG. 1, and FIG. 2B is a cross-sectional view taken along line B- in FIG. It is sectional drawing in B '.

  The required resist pattern is formed in a pattern formation region 254 where the surface of the convex portion 252 of the resist film is smooth using a photolithography technique.

  FIGS. 3A to 3E and FIGS. 4A to 4E are views showing a resist pattern forming method according to the first embodiment.

  FIG. 3 is a process diagram for explaining the resist pattern forming method of the present invention, and is shown by a cross-sectional view taken along the line BB ′ of FIG.

  As shown in FIG. 3A, the resist 2 applied on the substrate 1 is exposed to a non-patterned portion using a photomask 3a, and the photomask 3b is further exposed as shown in FIG. By exposing and developing a part of the pattern non-formation part using the resist, a resist film convex part 252 and a venting concave part 251 are formed as shown in FIG. 3C, and the resist film convex part 252 is formed. Consists of a pattern formation region 254 with a smooth resist surface and a region 253 with a rough resist surface. Next, as shown in FIG. 3D, a photomask 31 having a required pattern is brought into contact with the convex portion 252 of the resist film, and vacuuming 7 is performed from the outer peripheral portion of the base 1 to thereby remove the photomask 31 and the resist. After the convex portions 252 of the film are brought into close contact with each other, a predetermined pattern is exposed on the resist 2 through the transmission portion 32 of the photomask 31 by irradiating with UV light 4. Thereafter, it flows in through a vent 251 such as nitrogen or oxygen to separate the photomask 31 and the substrate 1 (including the resist film 2). Next, it develops using an alkali developing solution, and the resist recess 21 corresponding to a required pattern is formed in the pattern formation area 254 of the convex part 252 of the resist film.

  According to the present embodiment, the convex portion 252 of the resist film that is in close contact with the photomask 31 includes the pattern forming region 254 having a smooth resist surface and the region 253 having a rough resist surface. The effective contact area of the formed region 253 with the photomask is very small. Therefore, good separation after exposure can be realized.

  In addition, according to the present embodiment, compared to the case where the convex portion 252 of the resist film is configured only by the smooth pattern formation region 254, the convex portion 252 of the resist film can be widened, and the photomask can be formed. The pattern formation region 254 having a smooth surface without distortion is able to maintain high adhesion during exposure. As a result, a resist pattern having a good shape can be formed without causing a pattern defect or the like due to light wraparound.

  FIG. 5 shows experimental results obtained by determining the relationship between the exposure amount of the resist and the step amount.

The exposure amount used in the embodiment of the present invention is the exposure amount at which the residual film thickness of the resist becomes zero (threshold exposure amount) E _t , and the exposure amount necessary to form the evacuation recess is E _1. , when the exposure required to roughen the surface of the resist and E _2, it is necessary to UV radiation at an exposure dose of E _1> E _2.

In one embodiment, the exposure amount in FIGS. 3 (a) is _{E 2,} the exposure amount in FIG. 3 (b) is a _E 1 -E _2.

Further, when exposure is performed with E _t > E ₁ , a evacuation recess in which the resist remains on the substrate is formed, and when exposure is performed with E ₁ > E _t , a evacuation recess with the substrate surface exposed is formed.

FIG. 18 is a diagram showing the cross-sectional shape of the resist shown in FIG. 3C in more detail. In the figure, D ₁ is the step amount between the venting recess 251 and the pattern formation region 254, and D ₂ is the difference between the region 253 where the resist surface included in the projection 252 of the resist film is rough and the pattern formation region 254. The amount of step.

4A to 4E are cross-sectional views showing another example of the resist pattern forming method according to the first embodiment, in which the pattern non-formation region of FIG. 3A is exposed and FIG. (B) shows a process in the case where the order of the process of exposing at least a part of the pattern non-formation region is reversed, and there is no problem in the pattern formation also in this embodiment. However, the exposure amount in FIG. 4A is E ₁ -E ₂ , and the exposure amount in FIG. 4B is E ₂ .

  Further, in the present embodiment, after the step of exposing the pattern non-formation region of FIG. 3A, the development process is not performed, and at least a part of the pattern non-formation region of FIG. 3B is exposed. Although development processing is performed later, the effect does not change even if development processing is performed after exposure in both steps.

  The photomask 3a used in one example of the pattern forming method according to the first embodiment is a photomask having a configuration in which UV light does not pass through a pattern forming region having a smooth resist film surface. Reference numeral 3b denotes a photomask configured to transmit UV light to the evacuation recess formation region.

(Embodiment 2)
FIG. 17A to FIG. 17E are cross-sectional views illustrating the pattern forming method according to the second embodiment.

  FIGS. 17A to 17C show a process of forming irregularities on a resist film using a photolithography technique, FIG. 17D shows an exposure process of a resist pattern, and FIG. 17E shows a resist pattern. The state after formation is shown.

  As shown in FIG. 17A, a portion of the pattern non-formation portion is exposed to the resist 2 coated on the substrate 1 using a photomask 3c, and further, as shown in FIG. By exposing and developing a part of the pattern non-formation portion using the mask 3d, as shown in FIG. 17C, a resist film convex portion 252 and a venting concave portion 251 are formed. The convex portion 252 includes a pattern formation region 254 and a region 253 having a rough resist surface. Next, as shown in FIG. 17 (d), a photomask 31 having a required pattern is brought into close contact with the convex portion 252 of the resist film, and vacuuming 7 is performed from the outer peripheral portion of the substrate 1 through the venting concave portion 251. After the photomask 31 and the convex part 252 of the resist film are brought into close contact with each other, the resist 2 is exposed through the transmission part 32 of the photomask 31 by irradiating with UV light 4. Thereafter, nitrogen or oxygen or the like is introduced through the venting recess 251 to separate the photomask 31 and the substrate 1 (including the resist 2). Next, the resist recess 21 is formed in the pattern formation region 254 of the convex portion 252 of the resist film by developing using an alkali developer. According to the present embodiment, since the convex portion 252 of the resist film that is in close contact with the photomask 31 is composed of the pattern formation region 254 and the region 253 with a rough resist surface, the effective region 253 with the rough resist surface is effective. The contact area with a typical photomask is negligible. Therefore, good separation after exposure can be realized.

  In addition, according to the present embodiment, the resist film convex portion 252 can be widened compared to the case where the resist film convex portion 252 is configured only by the smooth pattern formation region 254 on the surface, and the photo film The pattern formation region 254 having a smooth surface without distortion of the mask can maintain high adhesion during exposure. As a result, a resist pattern having a good shape can be formed without causing a pattern defect or the like due to light wraparound.

In the process of the pattern forming method of the present embodiment, the order of the process of exposing a part of the pattern non-formation region of FIG. 17A and the process of exposing a part of the pattern non-formation region of FIG. There is no problem even if it is reversed. In one embodiment, the exposure amount in FIG. 17A is E ₂ and the exposure amount in FIG. 17B is E ₁ .

  Moreover, even if it develops after exposure in each process of Fig.17 (a) and FIG.17 (b), an effect does not change.

  The photomask 3c used in one example of the pattern forming method according to the second embodiment is a photomask configured to transmit UV light to a region having a larger surface roughness than a region having a smooth surface. The photomask 3d is a photomask configured to transmit UV light to the evacuation recess formation region.

  In the resist pattern forming method according to Embodiment 1 and Embodiment 2 of the present invention, a plurality of independent venting recesses are formed in a state where each reaches the outer peripheral portion of the resist film. Since the air intervening between the masks is efficiently discharged, the adhesiveness is high, and light wraparound does not occur at the time of exposure. As a result, a pattern with a good shape can be obtained.

  Further, a plurality of venting recesses may be formed in a connected state and at least one of the connected recesses for reaching the outer peripheral portion of the resist film.

  Further, as shown in FIGS. 10A and 10B, the resist recess 21 formed by exposure and development using a photomask having a required pattern is evacuated from the convex portion 252 of the resist. By forming so as to reach the concave portion 251, the nitrogen gas generated from the resist at the time of exposure can be efficiently exhausted through the concave portion 251 for venting. Therefore, exposure can be performed without causing deterioration in adhesion between the photomask and the substrate due to nitrogen gas generated from the resist, and a resist pattern having a good shape can be formed.

  In the explanation example of the embodiment of the present invention, the case where the pattern formation region is set substantially at the center of the convex portion of the resist film has been described. However, as shown in FIG. The same effect can be obtained even when the region 254 having a rough surface exists and the pattern forming region 254 having a smooth surface is arranged on the convex portion of the resist film around the region 254.

  Further, as shown in FIG. 11D, the substrate used in the embodiment of the present invention has a substantially disk shape, and the convex portion 252 of the resist film formed in the first and second embodiments is formed. A region 253 where the resist film has a rough surface and a pattern formation region 254 where the surface of the resist film is rough and a convex surface 252 of the resist film are formed in a substantially radial shape from the vicinity 16 of the resist film to the outer edge 15 of the substrate. (Not shown), when performing the required pattern exposure, the air intervening between the substrate and the photomask is discharged very efficiently through the venting recess 251 so that it adheres in a short time. The light wraparound does not occur during exposure, and a pattern having a good shape can be stably obtained. Further, when nitrogen gas is introduced through the resist recess 251 after exposure, it can be introduced very efficiently. Furthermore, since the effective contact area of the region 253 with the roughened resist surface with the photomask is very small, it can be stably separated in a short time.

(Embodiment 3)
The third embodiment is an embodiment in which the resist pattern forming method according to the first and second embodiments is used in a method for manufacturing a master information carrier.

  First, in order to describe the overall configuration, FIG. 12 after the formation of the evacuation recess will be described. A resist film 2 is applied on the nonmagnetic substrate 11, and the resist film 2 is formed with irregularities by a convex portion 252 and a venting concave portion 251 of the resist film. Further, the convex portion 252 of the resist film includes a pattern forming region 254 having a smooth surface and a region 253 having a rough surface (not shown). The evacuation recess 251 is formed by a groove-like portion extending substantially in the radial direction on the nonmagnetic substrate 11 and an annular portion surrounding the projection 252. For this reason, the evacuation recess 251 communicates with the outer space of the nonmagnetic substrate 11 from the inner periphery to the outer periphery.

  FIG. 13, FIG. 14, FIG. 15 and FIG. 16 are cross-sectional views of the substrate showing in more detail the embodiment of the present invention in the method of manufacturing the master information carrier.

  FIG. 13A shows the resist 2 coated on the nonmagnetic substrate 11 is exposed and developed using two different photomasks, and the resist surface has a smooth surface area 254 and the smooth surface area. It is a figure which shows the state after formation of the area | region 253 with larger surface roughness than this, and the recessed part 251 for ventilation. Since the above process has been described in detail in the pattern forming method shown in the first and second embodiments, it will be omitted.

  FIGS. 13B to 13C show a resist pattern exposure process, and FIG. 13D shows a state after the resist pattern is formed.

  As shown in FIG. 13B, after the photomask 33 corresponding to the required digital information signal pattern is brought into contact with the resist surface, vacuuming is performed from the outer peripheral portion of the non-magnetic substrate, and through the venting recess 251. Then, the photomask 33 and the convex part 252 of the resist film are brought into close contact with each other, and the resist film 2 is exposed and developed through the transmission part 32 of the photomask 33 as shown in FIG. As shown in d), a resist pattern 211 having a resist recess 21 corresponding to a required digital information signal is formed.

  FIG. 13E shows a state in which a ferromagnetic thin film is formed, and FIG. 13F shows a state after the formation of the ferromagnetic thin film pattern 63.

  As shown in FIG. 13E, after the ferromagnetic thin film 6 is formed on the nonmagnetic substrate 11 and the resist pattern 211, the unnecessary ferromagnetic thin film 6 deposited on the resist pattern 211 is lifted off using a solvent. As a result, a ferromagnetic thin film pattern 63 is formed as shown in FIG.

  FIGS. 14A to 14D and FIGS. 15E to 15H show a second example of the third embodiment. FIGS. 14A to 14D show processes from the formation of the evacuation recess 251 to the formation of the resist pattern, and FIGS. 15E to 15H show the manufacture of a master information carrier using the formed resist pattern. It is sectional drawing which shows another example of the method.

  FIG. 14A shows the coated resist 2 exposed and developed using two different photomasks. The resist surface has a smooth surface area 254 and a surface roughness higher than that of the smooth surface area. It is sectional drawing which shows the state after forming the large area | region 253 and the recessed part 251 for ventilation. Since the above process has been described in detail in the pattern forming method shown in the first and second embodiments, it will be omitted.

  14B to 14C show the resist pattern exposure process, and FIG. 14D shows the state after the resist pattern is formed.

  As shown in FIG. 14B, after bringing the photomask 33 corresponding to the required digital information signal pattern into contact with the resist surface, vacuuming is performed from the outer peripheral portion of the nonmagnetic substrate, and the evacuation recess 251 is interposed. Then, the photomask 33 and the convex portion 252 of the resist film are brought into close contact with each other, and the resist film 2 is exposed and developed through the transmission portion 32 of the photomask 33 as shown in FIG. As shown in d), a resist pattern 211 having a resist recess 21 corresponding to a required digital information signal is formed.

  FIGS. 15E to 15F show a process of forming the base recess 13 having a pattern corresponding to the digital information signal, and FIG. 15G shows a state where the ferromagnetic thin film 6 is formed. h) shows a state in which the ferromagnetic thin film pattern 63 corresponding to a required digital information signal is embedded in the recess of the substrate.

  As shown in FIG. 15E, the nonmagnetic substrate 11 is etched by the reactive gas 5 using the resist pattern 211 as a mask. As a result, as shown in FIG. 15 (f), a base recess 13 having a pattern corresponding to a required digital information signal is formed.

  After the ferromagnetic thin film 6 is formed so as to be embedded in the base recess 13 and lifted off, a ferromagnetic thin film pattern 63 embedded in the nonmagnetic base 11 is formed as shown in FIG. .

In this embodiment, the exposure amount (threshold exposure amount) at which the residual film thickness of the resist becomes zero is E _t , the exposure amount necessary to form the recess for venting is E ₁ , and it is necessary to roughen the resist surface. If the exposure amount is E ₂ , the resist remains in the evacuation recess when the exposure is performed so that E ₁ > E ₂ and E _t > E ₁ are satisfied. Therefore, the ferromagnetic thin film formed on the venting recess 251 in the subsequent process is removed together with the resist by lift-off, and a ferromagnetic thin film pattern is formed only in the pattern formation region 254.

  FIG. 16A to FIG. 16F show a third example of the third embodiment.

  In FIG. 16A, the resist 2 coated on the nonmagnetic substrate 11 on which the ferromagnetic thin film 6 is formed is exposed and developed using two different photomasks, and the surface of the resist is smooth. It is sectional drawing which shows the state after forming the area | region 254, the area | region 253 with larger surface roughness than the area | region where the said surface is smooth, and the evacuation recessed part 251. FIG. Since the above process has been described in detail in the pattern forming method shown in the first and second embodiments, it will be omitted.

  FIGS. 16B to 16C show the resist pattern exposure process, and FIG. 16D shows the state after the resist pattern is formed.

  As shown in FIG. 16B, after the photomask 33 corresponding to the required digital information signal pattern is brought into contact with the resist surface, vacuuming is performed from the outer peripheral portion of the nonmagnetic substrate, and the evacuation recess 251 is interposed. Then, the photomask 33 and the resist film convex portion 252 are brought into close contact with each other, exposed as shown in FIG. 16C, and developed to obtain a required digital information signal as shown in FIG. A resist pattern 211 corresponding to is formed.

  FIG. 16E shows a process of etching the ferromagnetic thin film 6, and FIG. 16F shows a state after the formation of the ferromagnetic thin film pattern 63 corresponding to a required digital information signal.

  As shown in FIG. 16E, using the resist pattern 211 as a mask, the ferromagnetic thin film 6 is etched by reactive ion etching or ion milling using the reactive gas 5, and then on the ferromagnetic thin film pattern 63. By removing the unnecessary resist, a ferromagnetic thin film pattern 63 corresponding to a required digital information signal is formed.

In this embodiment, the exposure amount E ₁ required to form the venting recess 251 is set to be larger than the exposure amount (threshold exposure amount) E _t at which the residual film thickness of the resist becomes zero. Although the concave portion 251 shows the case where the surface of the ferromagnetic thin film 6 is exposed, the resist remains in the venting concave portion 251 by exposure with an exposure amount that satisfies the relationship of E _t > E _1. Even in such a case, all the residual resist in the evacuation recess 251 can be exposed by exposure using the photomask 33 shown in FIG. Therefore, in either case, only the ferromagnetic thin film pattern corresponding to the digital information signal is formed only in the pattern formation region 254.

  According to the present embodiment, when evacuation is performed through the evacuation recess, the region 253 having a rough resist surface exists in a part of the projection 252 of the resist film, so that distortion of the photomask can be suppressed. . Therefore, the pattern formation region 254 can achieve high adhesion with the photomask. In addition, since the effective contact area of the region 253 with the roughened resist surface with the photomask is very small, it can be easily separated after exposure. As a result, resist peeling does not occur, a good resist pattern can be formed in the pattern formation region of the convex portion of the resist film, and a master information carrier having high pattern accuracy can be stably produced. .

(Embodiment 4)
Embodiment 4 describes a method for manufacturing a magnetic recording medium, a method for manufacturing a magnetic recording / reproducing apparatus, and a magnetic recording / reproducing apparatus using the method for manufacturing a master information carrier according to Embodiment 3.

  FIG. 19 shows a schematic diagram of a recording apparatus for performing magnetic transfer recording of digital information signals. In FIG. 19, a magnetic disk 49 as a magnetic recording medium is a donut disk-shaped disk having a center hole 49a. The magnetic disk 49 is formed by forming a ferromagnetic thin film containing Co or the like as a main component on the surface of a nonmagnetic substrate by a sputtering method.

  A disk-shaped master information carrier 39 is arranged so as to be in contact with the surface of the ferromagnetic thin film of the magnetic disk 49. The master information carrier 39 is manufactured by the manufacturing method described in the third embodiment, and a signal area 39 a is provided on the surface in contact with the magnetic disk 49. The signal area 39 a is formed by the ferromagnetic thin film pattern 63 of the third embodiment, and is a fine array pattern corresponding to a digital information signal to be magnetically transferred and recorded on the magnetic disk 49.

  The magnetic disk 49 is held by a disk holder 34. A chuck part 34 a for positioning and holding the magnetic disk 49 is provided at the tip of the disk holder 34. A suction hole 34 b is provided inside the disk holder 34, the suction hole 34 b communicates with the central hole 49 a of the magnetic disk 49, and one end is connected to the exhaust duct 35.

  An exhaust device 36 is attached to the end of the exhaust duct 35. When the exhaust device 36 is started, the magnetic disk 49, the master information carrier 39, and the like are passed through the exhaust duct 35 and the suction hole 34b of the disk holder 34. The space between is in a negative pressure state. As a result, the master information carrier 39 is attracted to the magnetic disk 49 side and is superposed on the master information carrier 39 in a state where the magnetic disk 49 is positioned.

  The magnetizing head 37 is for applying an external magnetic field necessary for transfer recording from the master information carrier 39 to the magnetic disk 49. The magnetic thin film pattern corresponding to the digital information signal formed on the master information carrier 39 is magnetized by the magnetic field applied from the magnetizing head 37, and the magnetic field 49 is strengthened in the signal area 39a by the leakage magnetic flux generated therefrom. A digital information signal corresponding to the magnetic thin film pattern is recorded.

  Furthermore, a magnetic recording / reproducing apparatus can be manufactured using the magnetic recording medium manufactured through the above processes. Details of the magnetic recording / reproducing apparatus will be described later with reference to FIG. 20, but when the magnetic recording / reproducing apparatus is manufactured, a magnetic recording medium on which a digital information signal is recorded using a master information carrier is mounted on the rotating portion. It will be.

  FIG. 20 shows a schematic diagram of the magnetic recording / reproducing apparatus. The magnetic disk 41, which is a magnetic recording medium, is manufactured through the processes described above. The magnetic disk 41 is supported on a spindle 42 which is a rotating part. The magnetic disk 41 is rotated by the rotation of a spindle motor 43 that is a rotating means via a spindle 42.

  The thin film magnetic head 44 is attached to an actuator 47 serving as a moving means via a suspension 45 serving as a support member and an actuator arm 46.

  According to this configuration, the thin film magnetic head 44 can be moved by the operation of the actuator 47. The thin film magnetic head 44 is disposed to face the surface of the magnetic disk 41. For this reason, it is possible to read and write signals on almost the entire surface of the magnetic disk 41 by rotating the magnetic disk 41 and moving the thin film magnetic head 44 in the radial direction of the magnetic disk 41. Further, the control of the rotation of the magnetic disk 41, the position control of the thin film magnetic head 44, the control of the recording / reproducing signal, and the like are performed by a control circuit 48 as processing means.

(Example)
Examples of the present invention will be described below. A resist thickness of about 0.7 μm was spin-coated on the substrate, soft-baked on a 90 ° C. hot plate for 1 minute, and then exposed to the resist surface in the pattern non-formation region with a UV irradiation power of 8 mW / cm 2 for 2 seconds. Then, at least a part of the pattern non-formation region was exposed for 4 seconds and developed, thereby forming a resist unevenness having a step amount of about 0.3 μm between the pattern formation region 254 and the evacuation recess 251. In addition, the resist surface roughness of the region 253 where the resist surface of the convex portion of the resist film became rough was 50 nm to 70 nm.

  Next, the photomask on which the required shape pattern is mounted and the convex portion of the resist film are brought into contact with each other, and are brought into close contact with each other by vacuuming, and are exposed with an optimum exposure amount (Eo) for obtaining a target line width of the resist, By developing after separating the photomask from the resist film, a resist pattern having a good shape was obtained even in the line width of the submicron region.

  After preformat recording on the magnetic recording medium using the master information carrier produced by the method described above, the signal was evaluated by reading the signal recorded on the magnetic recording medium using a head. As a result, it was confirmed that a signal as designed was recorded even for a fine line having a pattern line width of 0.3 μm.

  On the other hand, in the evaluation performed using the master information carrier prepared by the conventional method shown in FIG. 6 as described above, when the pattern line width was thinned to 0.5 μm, a reproduction signal as designed could not be obtained.

  Here, when the pattern line width is reduced, the magnetization reversal length of the tracking servo signal transferred and recorded is reduced, so that the resolution in the track width direction based on the signal is improved and the positioning accuracy is improved. The positioning accuracy in this case is proportional to the reciprocal of the magnetization reversal length. When the line width is changed from 0.5 μm to 0.3 μm, the positioning accuracy in the track width direction is about 1.7 times (0.5 μm / 0.3 μm). become.

  If the magnetization reversal length of the tracking servo signal transferred and recorded becomes small, assuming that the tracking servo signal occupies the same area, the repetitive cycle of the signal present in the magnetic reversal length is reduced. Can be increased. As a result, the signal S / N is improved by the signal averaging effect, and the positioning accuracy can be improved. In this case, the positioning accuracy is proportional to the square root of the reciprocal of the magnetization reversal length. When the line width is changed from 0.5 μm to 0.3 μm, the positioning accuracy in the track width direction is about 1.3 times.

  Due to these two effects, when the line width is changed from 0.5 μm to 0.3 μm, the positioning accuracy in the track width direction is about 2.2 times (1.7 × 1.3). That is, it becomes possible to increase the density in the track width direction by a factor of 2.2, which is very effective in realizing a large capacity of the magnetic recording / reproducing apparatus.

  In the embodiment of the present invention, the case where the photomask is distorted is shown, but the same effect can be obtained even when the substrate is distorted.

  In the pattern forming method according to the embodiment of the present invention, the method of forming a fine pattern only in a region where the resist surface is smooth has been described. However, a line width of submicron or less is formed in a region where the surface is rough. However, it is possible to form a pattern of several μm or more.

  The embodiments of the present invention have been described above with examples. However, the present invention is not limited to the above-described embodiments, and can be applied to other embodiments based on the technical idea of the present invention.

  As described above, according to the present invention, the distortion of the photomask due to evacuation through the evacuation recess can be greatly reduced, and the adhesion between the photomask and the resist in the smooth pattern formation region on the resist surface is improved. To do. Further, since the surface is rough except for the pattern formation region on the resist surface, the effective contact area of the portion with the photomask is very small. Therefore, good separation after exposure can be realized. As a result, resist peeling or the like does not occur and a good resist pattern can be obtained. Therefore, it is useful for a resist pattern forming method in manufacturing a master information carrier, for example.

Plane and sectional views showing the resist configuration of Embodiment 1 of the present invention Plane and sectional views showing the pattern forming method of Embodiment 1 of the present invention Process sectional drawing which shows the resist pattern formation method of Embodiment 2 of this invention Process sectional drawing which shows another example of the resist pattern formation method of Embodiment 2 of this invention The figure which shows the relationship between the resist level difference amount and exposure amount which concerns on one Embodiment of this invention. Cross-sectional process chart showing pattern formation method by conventional method Sectional drawing explaining the subject in the pattern formation method by the conventional method Sectional drawing which shows an example of the problem-solving method by a conventional method The top view which shows the pattern arrangement | positioning in the pattern formation process of the conventional method The top view which shows an example of the pattern arrangement | positioning which concerns on one Example of this invention The top view which shows another example of the pattern arrangement | positioning which concerns on one Example of this invention The perspective view of the whole base | substrate after the recessed part for evacuation which concerns on one Embodiment of this invention is formed Sectional drawing which shows an example of the master information carrier manufacturing method of Embodiment 3 of this invention Sectional drawing which shows another example of the master information carrier manufacturing method of Embodiment 3 of this invention Sectional drawing which shows another example of the master information carrier manufacturing method of Embodiment 3 of this invention, Comprising: Sectional drawing which shows the process following FIG. Sectional drawing which shows another example of the master information carrier manufacturing method of Embodiment 3 of this invention Process sectional drawing which shows the resist pattern formation method which concerns on one Embodiment of this invention Sectional drawing which shows the cross-sectional shape of the resist of embodiment of this invention in detail Schematic showing the manufacturing method of the magnetic recording medium of Embodiment 4 of this invention Schematic diagram of a magnetic recording / reproducing apparatus according to Embodiment 4 of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Substrate 11 Nonmagnetic substrate 12 Substrate exposed surface 13 Substrate recess 15 Substrate outer edge 155 Nonmagnetic substrate outer peripheral part 16 Near center of resist film 2 Resist 21 Resist recess 211 Resist pattern corresponding to digital information signal 25 Resist surface Concavity and convexity 251 Degassing concave portion 252 Resist film convex portion 253 Resist surface roughened region 254 Pattern formation region 255 Photomask distortion 3 Photomask 31 Photomask having required pattern shape 33 Pattern corresponding to digital information signal 32 Photomask transmission part 4 UV light 41 Nitrogen gas 5 Etching 6 Ferromagnetic thin film 63 Ferromagnetic thin film pattern 7 Vacuum drawing 8 Gap

Claims (27)

A resist film coated on a substrate surface, comprising: a region having a smooth surface; a region having a larger surface roughness than the region having a smooth surface; and a region in which a recess for venting is formed Shape pattern. 2. The resist shape pattern according to claim 1, wherein a desired pattern is further formed on the smooth surface area by exposure and development. A step of forming a resist film on the surface of the substrate; and a step of increasing the surface roughness of the resist film by exposing and developing a first region that constitutes a part of a pattern non-formation region of the resist film. Exposing and developing a second area excluding the first area of the resist film pattern non-formation area to form a recess for venting on the surface of the resist film; and a photomask on the resist film In a state where the photomask is overlaid, the step of bringing the photomask into close contact with the surface of the resist film by evacuating through the evacuation recess, and exposing a required pattern to the pattern formation region on the surface of the resist film And a resist pattern forming method. A step of forming a resist film on the surface of the substrate, and a first region constituting a part of the pattern non-formation region of the resist film are exposed and developed to form a recess for venting on the surface of the resist film A step of increasing the surface roughness of the resist film by exposing / developing a second region excluding the first region of the non-patterned region of the resist film, and a photomask on the resist film In a state where the photomask is overlaid, the step of bringing the photomask into close contact with the surface of the resist film by evacuating through the evacuation recess, and exposing a required pattern to the pattern formation region on the surface of the resist film And a resist pattern forming method. A step of forming a resist film on the surface of the substrate, a first exposure step of exposing a pattern non-formation region of the resist film, and a second exposure step of exposing a part of the pattern non-formation region of the resist film. By developing the resist film, a portion of the resist film excluding a common portion with the second region exposed in the second exposure step in the first region exposed in the first exposure step A step of increasing the surface roughness and forming a evacuation recess in a common part with the second region, and a vacuum evacuation through the evacuation recess with the photomask overlaid on the resist film. A resist pattern comprising: a step of bringing the photomask into close contact with the surface of the resist film; and a step of exposing a required pattern to a pattern formation region on the surface of the resist film. Down forming method. A step of forming a resist film on the surface of the substrate, a first exposure step of exposing a part of the non-patterned region of the resist film, and a second exposure step of exposing a non-patterned region of the resist film The resist film is a portion of the second region exposed in the second exposure step except for the common portion with the first region exposed in the first exposure step by developing the resist film And increasing the surface roughness of the first region, forming a recess for venting at a common portion with the first region, and applying a vacuum through the vent for recessing with a photomask overlaid on the resist film. A resist pattern comprising: a step of bringing the photomask into close contact with the surface of the resist film by pulling; and a step of exposing a pattern formation region on the surface of the resist film to a required pattern. Over emissions forming method. The total exposure amount for exposing the evacuation recess is E ₁ , the exposure amount for increasing the surface roughness of the resist film is E ₂ , and E ₁ and E ₂ are E ₁ > E ₂ . 7. The resist pattern forming method according to claim 3, wherein the resist pattern has a relationship. 7. The method of forming a resist pattern according to claim 3, wherein each of a plurality of independent evacuation recesses is formed so as to reach the outer periphery of the resist film. 7. A substantially disk-shaped substrate is used as the substrate, and a bleed-out recess in the resist film is formed substantially radially so as to extend from the vicinity of the center of the resist film to the outer peripheral portion. The resist pattern formation method as described in 2. 7. A plurality of venting recesses are formed so as to be connected to each other, and at least a part of the connected venting recesses reaches the outer peripheral portion of the resist film. The resist pattern formation method of description. A step of forming a resist film on the surface of the nonmagnetic substrate, and a step of increasing the surface roughness of the resist film by exposing and developing a first region constituting a part of the pattern non-formation region of the resist film. And exposing and developing a second area excluding the first area of the resist film pattern non-formation area to form a recess for venting on the surface of the resist film; and With the mask overlapped, the step of bringing the photomask into close contact with the surface of the resist film by evacuating through the evacuation recess, and the required digital information for the pattern formation region on the surface of the resist film A signal pattern is exposed and developed to form a resist recess corresponding to the required digital information signal pattern, and the surface of the nonmagnetic substrate is formed at the bottom of the resist recess. Depositing a ferromagnetic thin film on the resist film surface after exposing and developing the required digital information signal pattern and on the nonmagnetic substrate surface exposed through the resist recess; and The resist film after exposure / development of the required digital information signal pattern is removed together with the ferromagnetic thin film deposited on the resist film surface after exposure / development of the required digital information signal pattern, and the non-magnetic And forming a ferromagnetic thin film pattern corresponding to the required digital information signal pattern on the surface of the substrate. A step of forming a resist film on the surface of the nonmagnetic substrate, and a step of increasing the surface roughness of the resist film by exposing and developing a first region constituting a part of the pattern non-formation region of the resist film. And exposing and developing a second area excluding the first area of the resist film pattern non-formation area to form a recess for venting on the surface of the resist film; and A process of bringing a photomask into close contact with the surface of the resist film by evacuating through the evacuation recess while the mask is overlaid, and a required digital information signal for a pattern formation region on the surface of the resist film The pattern is exposed and developed to form a resist recess corresponding to the required digital information signal pattern, and the surface of the nonmagnetic substrate is exposed at the bottom of the resist recess. Etching the resist film after exposing and developing the required digital information signal pattern as a mask, and applying the required digital information signal pattern to the nonmagnetic substrate surface exposed through the resist recess. Forming a base recess corresponding to the step, depositing a ferromagnetic thin film in a state of being embedded in the base recess with respect to the resist film surface and the base recess remaining after the etching, and the base recess And removing the resist film remaining after the etching with the ferromagnetic thin film embedded in place together with the ferromagnetic thin film deposited on the surface of the resist film remaining after the etching, on the surface of the nonmagnetic substrate. Forming a ferromagnetic thin film pattern corresponding to the digital information signal pattern. Method for manufacturing a master information carrier. A step of depositing a ferromagnetic thin film on the surface of the nonmagnetic substrate, a step of forming a resist film on the surface of the ferromagnetic thin film, and exposing a first region constituting a part of a pattern non-formation region of the resist film A step of increasing the surface roughness of the resist film by developing and a second region excluding the first region of the pattern non-formation region of the resist film by exposing and developing the surface of the resist film Forming a recess for venting on the substrate, and adhering the photomask to the surface of the resist film by evacuating through the recess for venting with a photomask overlaid on the resist film; Then, a resist recess having a desired pattern shape is formed by exposing and developing a required pattern in the region of the convex portion of the resist film, and the ferromagnetic thin film is exposed at the bottom of the resist recess. Etching using the resist film after the required pattern exposure as a mask, removing the portion of the ferromagnetic thin film exposed through the resist recess, and the resist film remaining after the etching. A method for producing a master information carrier comprising removing and forming a ferromagnetic thin film pattern corresponding to a digital information signal on the surface of the non-magnetic substrate. A step of forming a resist film on the surface of the non-magnetic substrate, and exposing and developing a first region that constitutes a part of the pattern non-formation region of the resist film, thereby forming a recess for venting on the surface of the resist film. A step of increasing the surface roughness of the resist film by exposing and developing a second region excluding the first region of the non-patterned region of the resist film; and With the photomask overlaid, the process of bringing the photomask into close contact with the surface of the resist film by evacuating through the evacuation recess, and the required digital for the pattern formation region on the surface of the resist film An information signal pattern is exposed and developed to form a resist recess corresponding to the required digital information signal pattern, and the nonmagnetic substrate is formed at the bottom of the resist recess. Exposing a surface; depositing a ferromagnetic thin film on the resist film surface after exposing and developing the required digital information signal pattern and on the nonmagnetic substrate surface exposed through the resist recess; Removing the resist film after exposing and developing the required digital information signal pattern together with the ferromagnetic thin film deposited on the resist film surface after exposing and developing the required digital information signal pattern; Forming a ferromagnetic thin film pattern corresponding to the required digital information signal pattern on the surface of the non-magnetic substrate. A step of forming a resist film on the surface of the non-magnetic substrate, and exposing and developing a first region that constitutes a part of the pattern non-formation region of the resist film, thereby forming a recess for venting on the surface of the resist film. A step of increasing the surface roughness of the resist film by exposing and developing a second region excluding the first region of the non-patterned region of the resist film; and In a state where the photomask is overlapped, a step of bringing the photomask into close contact with the convex portion of the resist film by evacuating through the venting concave portion, and a pattern forming region on the resist film surface, A digital information signal pattern is exposed and developed to form a resist recess corresponding to the required digital information signal pattern, and a surface of the nonmagnetic substrate is formed at the bottom of the resist recess. And exposing the required digital information signal pattern to the nonmagnetic substrate surface exposed through the resist recess by etching using the resist film as a mask after exposing and developing the required digital information signal pattern. Forming a substrate recess corresponding to the signal pattern; depositing a ferromagnetic thin film in a state of being embedded in the substrate recess with respect to the resist film surface and the substrate recess remaining after the etching; The resist film remaining after the etching with the ferromagnetic thin film embedded in the base recess left is removed together with the ferromagnetic thin film deposited on the surface of the resist film remaining after the etching, and the surface of the nonmagnetic base is removed. Forming a ferromagnetic thin film pattern corresponding to a required digital information signal pattern. Method for producing a master information carrier to be. A step of depositing a ferromagnetic thin film on the surface of the nonmagnetic substrate, a step of forming a resist film on the surface of the ferromagnetic thin film, and exposing a first region constituting a part of a pattern non-formation region of the resist film A step of forming a recess for venting on the surface of the resist film by developing, and a second region excluding the first region of the pattern non-formation region of the resist film, A step of increasing the surface roughness of the resist film, and a step of bringing the photomask into close contact with the surface of the resist film by evacuating through the venting recess in a state where the photomask is overlaid on the resist film And exposing and developing a required pattern in the convex region of the resist film to form a resist recess having a required pattern shape, and exposing the ferromagnetic thin film to the bottom of the resist recess. Etching the resist film after the required pattern exposure as a mask, removing the ferromagnetic thin film in the exposed portion through the resist recess, and removing the resist film remaining after the etching And removing it to form a ferromagnetic thin film pattern corresponding to a digital information signal on the surface of the nonmagnetic substrate. A step of forming a resist film on the surface of the nonmagnetic substrate; a first exposure step of exposing a non-patterned region of the resist film; and a second exposure of exposing a part of the non-patterned region of the resist film. And developing the resist film to remove a portion of the first region exposed in the first exposure step, except for a common portion between the second region exposed in the second exposure step The step of increasing the surface roughness of the film and forming a recess for venting in a common part with the second region, and a state where the photomask is superimposed on the resist film, The step of bringing the photomask into close contact with the surface of the resist film by evacuating, and exposing and developing a required digital information signal pattern on a pattern formation region on the surface of the resist film Forming a resist recess corresponding to the digital information signal pattern, exposing the surface of the non-magnetic substrate to the bottom of the resist recess, and exposing the resist after exposing and developing the required digital information signal pattern Depositing a ferromagnetic thin film on the surface of the film and the surface of the non-magnetic substrate exposed through the resist recess, and exposing the developed digital information signal pattern and developing the resist film on the required digital The information signal pattern is removed together with the ferromagnetic thin film deposited on the resist film surface after exposure and development, and a ferromagnetic thin film pattern corresponding to the required digital information signal pattern is formed on the nonmagnetic substrate surface. And a process for producing a master information carrier. A step of forming a resist film on the surface of the nonmagnetic substrate; a first exposure step of exposing a non-patterned region of the resist film; and a second exposure of exposing a part of the non-patterned region of the resist film. And developing the resist film to remove a portion of the first region exposed in the first exposure step, except for a common portion between the second region exposed in the second exposure step The step of increasing the surface roughness of the film and forming a recess for venting in a common part with the second region, and a state where the photomask is superimposed on the resist film, The step of bringing the photomask into close contact with the surface of the resist film by evacuating, and exposing and developing a required digital information signal pattern on a pattern formation region on the surface of the resist film Forming a resist recess corresponding to the digital information signal pattern, exposing a surface of the non-magnetic base to the bottom of the resist recess, and exposing the resist film after developing the required digital information signal pattern And forming a substrate recess corresponding to the required digital information signal pattern on the surface of the non-magnetic substrate exposed through the resist recess, and the resist film surface remaining after the etching. And a step of depositing a ferromagnetic thin film in a state of being embedded in the base recess with respect to the base recess, and the resist film remaining after the etching in a state of leaving the ferromagnetic thin film embedded in the base recess. The nonmagnetic substrate is removed together with the ferromagnetic thin film deposited on the resist film surface remaining after etching. Method for producing a master information carrier which comprises a step of forming a ferromagnetic thin film pattern corresponding to the desired digital information signal pattern to the surface. Depositing a ferromagnetic thin film on the surface of the nonmagnetic substrate, forming a resist film on the surface of the ferromagnetic thin film, a first exposure process for exposing a pattern non-formation region of the resist film, and the resist A second exposure step of exposing a part of the non-patterned region of the film; and developing the resist film to thereby develop a second exposure step of the first region exposed in the first exposure step. Increasing the surface roughness of a portion of the resist film excluding a portion common to the exposed second region, and forming a recess for venting in the portion common to the second region; and With the photomask overlaid, a vacuum is drawn through the evacuation recess to bring the photomask into close contact with the surface of the resist film, and a required pattern is exposed to the convex region of the resist film.・ Current Forming a resist recess having a required pattern shape, exposing the ferromagnetic thin film to the bottom of the resist recess, and performing etching using the resist film after the required pattern exposure as a mask, Removing the portion of the ferromagnetic thin film exposed through the resist recess and removing the resist film remaining after the etching to form a ferromagnetic thin film pattern corresponding to a digital information signal on the surface of the nonmagnetic substrate. A method for producing a master information carrier, comprising: A step of forming a resist film on the surface of the non-magnetic substrate; a first exposure step of exposing a part of the non-patterned region of the resist film; and a second exposure of exposing the non-patterned region of the resist film. And by developing the resist film, a portion of the second region exposed in the second exposure step, excluding a portion common to the first region exposed in the first exposure step The step of increasing the surface roughness of the resist film and forming a bleed recess for the common area with the first region, and a photomask overlaid on the resist film through the evacuation recess A step of bringing the photomask into close contact with the surface of the resist film by evacuating and exposing / developing a required digital information signal pattern to a pattern forming region on the surface of the resist film. Forming a resist recess corresponding to the digital information signal pattern, exposing a surface of the non-magnetic substrate to the bottom of the resist recess, and exposing the resist to the required digital information signal pattern and developing the resist Depositing a ferromagnetic thin film on the surface of the film and the surface of the non-magnetic substrate exposed through the resist recess, and exposing the developed digital information signal pattern and developing the resist film on the required digital The information signal pattern is removed together with the ferromagnetic thin film deposited on the resist film surface after exposure and development, and a ferromagnetic thin film pattern corresponding to the required digital information signal pattern is formed on the nonmagnetic substrate surface. And a process for producing a master information carrier. A step of forming a resist film on the surface of the non-magnetic substrate; a first exposure step of exposing a part of the non-patterned region of the resist film; and a second exposure of exposing the non-patterned region of the resist film. And by developing the resist film, a portion of the second region exposed in the second exposure step, excluding a portion common to the first region exposed in the first exposure step The step of increasing the surface roughness of the resist film and forming a bleed recess for the common area with the first region, and a photomask overlaid on the resist film through the evacuation recess A step of bringing the photomask into close contact with the surface of the resist film by evacuating and exposing / developing a required digital information signal pattern to a pattern forming region on the surface of the resist film. Forming a resist recess corresponding to the digital information signal pattern, exposing a surface of the non-magnetic substrate to the bottom of the resist recess, and exposing the resist film after developing the required digital information signal pattern And forming a substrate recess corresponding to the required digital information signal pattern on the surface of the non-magnetic substrate exposed through the resist recess, and the resist film surface remaining after the etching. And a step of depositing a ferromagnetic thin film in a state of being embedded in the base recess with respect to the base recess, and the resist film remaining after the etching in a state of leaving the ferromagnetic thin film embedded in the base recess. The non-magnetic group is removed together with the ferromagnetic thin film deposited on the resist film surface remaining after etching. Method for producing a master information carrier which comprises a step of forming a ferromagnetic thin film pattern corresponding to the desired digital information signal pattern on the surface. Depositing a ferromagnetic thin film on the surface of the non-magnetic substrate; forming a resist film on the surface of the ferromagnetic thin film; and a first exposure process for exposing a part of a pattern non-formation region of the resist film; A second exposure step of exposing a pattern non-formation region of the resist film; and developing the resist film to thereby develop a first exposure step among the second regions exposed in the second exposure step. Increasing the surface roughness of a portion of the resist film excluding a portion common to the exposed first region, forming a recess for venting in the portion common to the first region, and By exposing the first region constituting at least part of the pattern non-formation region, exposing the second region constituting at least part of the pattern non-formation region, and developing the resist film, Previous A step of increasing the surface roughness of the resist film in a portion of the second region excluding a portion common to the first region, and forming a recess for venting in the first region; and a photomask on the resist film In a state where the photomask is overlaid, the step of bringing the photomask into close contact with the surface of the resist film by evacuating through the evacuation recess, and exposing and developing a required pattern in the region of the protrusion of the resist film Forming a resist recess having a required pattern shape, exposing the ferromagnetic thin film to the bottom of the resist recess, and performing etching using the resist film after the required pattern exposure as a mask, Removing the portion of the ferromagnetic thin film exposed through the resist recess, and removing the resist film remaining after the etching to form a surface on the non-magnetic substrate surface. Method for producing a master information carrier which comprises a step of forming a Le information signal corresponding ferromagnetic thin film pattern. A step of manufacturing a master information carrier in which a ferromagnetic thin film pattern corresponding to a digital information signal is formed on a non-magnetic substrate; and an external magnetic field is applied in a state where the master information carrier is disposed opposite to the surface of a magnetic recording medium, Recording magnetic information corresponding to the ferromagnetic thin film pattern on the magnetic recording medium, wherein the step of manufacturing the master information carrier forms the ferromagnetic thin film pattern. The resist pattern forming step includes a region having a smooth surface and a region having a smooth surface by using a photolithography technique on the resist film applied to the substrate surface. In addition, the photomask is closely attached to the region having a large surface roughness, the step of forming the evacuation recess, and at least the region having the smooth surface. Degree and method of manufacturing a magnetic recording medium in which the surface is characterized by comprising the step of exposing a desired pattern with respect to smooth areas. The method of manufacturing a magnetic recording medium according to claim 23, wherein the digital information signal is a signal for use in tracking servo. 24. A method of manufacturing a magnetic recording / reproducing apparatus including the method of manufacturing a magnetic recording medium according to claim 23, wherein the magnetic recording medium on which magnetization information corresponding to a shape pattern of the ferromagnetic thin film is recorded is mounted on a rotating portion. A method of manufacturing a magnetic recording / reproducing apparatus comprising the steps of: A magnetic recording medium manufactured by the method of manufacturing a magnetic recording medium according to claim 23, a thin film magnetic head, a support member that supports the thin film magnetic head so as to face the magnetic recording medium, and the magnetic recording medium Rotating means for rotating; moving means coupled to the support member; for moving the thin film magnetic head along the film surface of the magnetic recording medium; and electrically connecting the thin film magnetic head, the rotating means, and the moving means A magnetic recording / reproducing apparatus comprising: processing means coupled to exchange signals with the thin film magnetic head, control rotation of the magnetic recording medium, and control movement of the thin film magnetic head. 27. The magnetic recording / reproducing apparatus according to claim 26, wherein the digital information signal is a signal used for tracking servo.

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