JP2005121625A - Burn-in apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a burn-in apparatus which can enhance test reliability, arranging the test condition by inhibiting the variations in the temperature of the atmosphere in a predetermined space, in which a semiconductor device is held. <P>SOLUTION: A semiconductor laser element 11 is held in a first mount space 21 of a plurality of the thermostats 12. The predetermined signal, expressing a status of the driven semiconductor laser element 11, is output by a status detection part 14 under the status in which the atmosphere of the first mount space 21 is kept at the temperature within a predetermined temperature range. One or more semiconductor laser elements 11 are housed in each thermostat 12. An occupied ratio of the semiconductor laser device 11 which is housed in a volume of the first mount space 21 is kept from 0.02% or higher to lower than 0.1% for the volume of the first mount space 21. By this constitution, the temperature variations of the atmosphere within the first mount space 21 can be inhibited, the testing condition of the semiconductor laser element 11 can be arranged, and the test reliability can be enhanced. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a burn-in apparatus used for an aging test of a semiconductor device and a semiconductor device test method using the burn-in apparatus.

FIG. 27 is a diagram showing an external appearance of the burn-in apparatus 1 of the first conventional technique, and FIG. 28 is a functional block diagram showing the configuration of the burn-in apparatus 1. The first prior art burn-in apparatus 1 includes one thermostat 2, a system controller 3, a chamber controller 4, a measurement unit 5, and a heating device and a cooling device (not shown). The burn-in apparatus 1 has a large thermostatic chamber 2 having a predetermined accommodating space in which a semiconductor device can be accommodated, and hundreds to thousands of objects to be measured are provided in the predetermined accommodating space of the thermostatic chamber 2. A certain semiconductor device is accommodated at high density. The predetermined accommodating space is formed in a substantially rectangular parallelepiped shape, and the volume of the predetermined accommodating space is selected to be, for example, about 0.42 m ^3, and the occupation ratio of the semiconductor device accommodated with respect to the predetermined accommodating space volume is predetermined. It is selected to be about 0.1 to 0.3% of the volume of the storage space to be determined. The plurality of semiconductor devices are mounted on the measurement substrate 6 and accommodated in the thermostatic chamber 2. A predetermined number of semiconductor devices are mounted on the measurement substrate 6. A plurality of measurement substrates 6 on which a plurality of semiconductor devices are mounted are accommodated in a predetermined internal space of the thermostatic chamber 2.

  The system controller 3 gives an operation command to each part of the burn-in apparatus 1, specifically, the chamber controller 4 and the measurement unit 5, and receives measurement information from the measurement unit 5. The chamber control unit 5 controls the heating device and the cooling device based on the operation command given from the system controller 4, and predetermines the atmosphere in the thermostat 2 by heating or cooling the atmosphere in the thermostat 2. Hold at temperature. The predetermined temperature is higher than the normal temperature, and is selected, for example, in the range of 50 ° C to 80 ° C. The measurement unit 5 drives a semiconductor device accommodated in the thermostat 2 while switching a plurality of connection channels connected to a plurality of measurement substrates 6 based on an operation command that can be given from the system controller 3. For all the semiconductor devices housed in the thermostatic chamber 2, for example, a drive current for driving each semiconductor device is measured to detect a semiconductor device that malfunctions.

  Further, in the semiconductor laser reliability test apparatus which is the second prior art burn-in apparatus, the semiconductor devices are accommodated in one thermostat at a high density, and the constant temperature is the same as the burn-in apparatus of the first prior art. The inside of the tank is held at a predetermined temperature, and the semiconductor device is driven to detect a semiconductor device that becomes defective in operation (for example, see Patent Document 1).

Japanese Utility Model Publication No. 7-2933

  In the burn-in apparatuses according to the first and second conventional techniques, a large number of semiconductor devices are accommodated in one thermostat at a time, and the test conditions such as the temperature of the atmosphere in the thermostat are different. In this case, even if a small amount of semiconductor device is inspected, another test cannot be performed unless the test under one test condition is completed. Therefore, a burn-in apparatus that can improve the efficiency of the test is on the rise.

  In the first conventional technique, hundreds to thousands of semiconductor devices are accommodated in a single thermostatic chamber at a high density, and these semiconductor devices are tested. At this time, when all the semiconductor devices are driven, the atmosphere of the predetermined storage space in the thermostatic bath is heated by the heat generated by the semiconductor device itself, and the temperature of the predetermined atmosphere of the storage space increases. Therefore, for example, the temperature of the atmosphere in the thermostatic bath cannot be kept constant only by controlling the heating device, that is, by performing an operation of heating the atmosphere by the heating device or stopping the heating. Therefore, the temperature of the atmosphere in the thermostat is kept constant by controlling the cooling device described above together with the heating device. Thus, when it is set as the structure provided with a heating apparatus and a cooling device, there exists a problem that an apparatus will become complicated and manufacturing cost will become high.

  In addition, since a large number of semiconductor devices are accommodated in one thermostatic chamber at a high density, the occupation ratio of the accommodated semiconductor devices is large relative to the volume of the predetermined accommodating space that accommodates the semiconductor devices in the thermostatic chamber, that is, the accommodating space. The ratio of the volume occupied by the semiconductor device to the volume of is large. For this reason, there is a problem that the temperature of the atmosphere in the predetermined storage space is difficult to diffuse in the storage space, and the temperature of the atmosphere in the predetermined storage space is likely to vary.

  An object of the present invention is to prevent variation in the temperature of the atmosphere in a predetermined accommodation space in which a semiconductor device in a thermostatic chamber is accommodated, improve test reliability, and improve test efficiency. It is an object of the present invention to provide a burn-in device that can be made to operate.

The present invention includes a plurality of thermostats having a predetermined accommodation space capable of accommodating a semiconductor device;
A temperature holding means that is provided in each thermostat and holds the atmosphere of the predetermined storage space of the thermostat at a temperature within a predetermined temperature range;
A burn-in apparatus comprising: a state detection unit that is provided corresponding to each thermostat and drives a semiconductor device accommodated in each thermostat and outputs a predetermined signal indicating the state of the semiconductor device. It is.

  Further, the present invention is characterized in that the occupation ratio of the semiconductor device to be accommodated with respect to the predetermined capacity of the accommodating space is selected to be 0.02% or more and less than 0.1% of the predetermined capacity of the accommodating space.

Further, the present invention corresponds to each thermostat, identification information holding means for holding individual identification information of each thermostat,
An identification information output unit that is provided corresponding to the state detection unit and outputs the identification information given from the identification information holding unit.

Further, the present invention provides a temperature-controlled bath body provided on the temperature-controlled bath body so that the temperature-controlled bath body and a predetermined storage space can be opened to a space outside the temperature-controlled bath and can be closed from the space outside the temperature-controlled bath. Including
The semiconductor device is a light emitting element,
The state detection means includes a light receiving element that receives light emitted from the light emitting element,
The light emitting element is detachably attached to either the thermostat body or the thermostat lid, and the light receiving element is detachably attached to either the thermostat body or the thermostat lid, and the thermostat When the predetermined storage space is closed from the space outside the thermostatic chamber by the bath body and the thermostatic bath lid, the light emitting element and the light receiving element are close to each other, and the light emitting section and the light receiving section are arranged to face each other. It is characterized by.

  In the present invention, the identification information holding unit applies a predetermined voltage to the identification information output unit.

The present invention further includes a state acquisition unit that is detachably connected to the state detection unit and acquires a predetermined signal output from the state detection unit,
The state detection means has an output terminal for outputting a predetermined signal,
The state acquisition means has an input terminal interconnected with the output terminal of the state detection means,
The output terminal and the input terminal are in point contact with the state acquisition unit detachably connected to the state detection unit.

Further, in the present invention, the thermostat is formed with a plurality of vent holes communicating the predetermined storage space and the external space of the thermostat,
The temperature holding means is capable of supplying a predetermined gas heated to a predetermined accommodation space through a predetermined first ventilation hole among the plurality of ventilation holes, and a predetermined first ventilation hole among the plurality of ventilation holes. A predetermined gas in a predetermined storage space can be discharged to the external space through a predetermined second ventilation hole different from the above.

Further, in the present invention, the temperature holding means is
A temperature adjustment space forming body that forms a predetermined temperature adjustment space connected to a predetermined storage space through the vent hole;
Heating means capable of heating a predetermined gas in a predetermined temperature adjustment space;
A predetermined gas in a predetermined temperature adjustment space is supplied to a predetermined storage space through a predetermined first ventilation hole by blowing air, and a predetermined gas in the predetermined storage space is predetermined through a second ventilation hole. And a gas circulation means for discharging to the temperature adjustment space.

  Further, according to the present invention, the predetermined first vent hole is formed in one end portion of the thermostatic bath in a predetermined direction, and the predetermined second vent hole is formed in the other end portion of the thermostatic bath in the predetermined direction. It is formed.

According to another aspect of the present invention, there is provided holding means for holding a plurality of semiconductor devices side by side along a predetermined direction at a position closer to the other of the predetermined direction than the predetermined first air hole.
Among the plurality of semiconductor devices held by the holding means, the semiconductor device that is closest to the predetermined first vent hole is disposed on one side in the predetermined direction and is supplied via the predetermined first vent hole to hold the holding means in advance. It is characterized by having a wind direction changing means for changing a predetermined gas flow toward the semiconductor device held at one end in a predetermined direction.

  Further, the present invention is characterized in that the wind direction changing means is formed to have a tapered shape as it moves away from the semiconductor device held by the holding means in the predetermined direction.

  Further, the present invention, in the predetermined direction, between the one end portion of the thermostatic bath in which the predetermined first vent hole is formed and the other end portion of the thermostatic bath in which the predetermined second vent hole is formed, It has a holding means for holding a plurality of semiconductor devices side by side along a predetermined direction perpendicular to a predetermined direction.

In the present invention, the predetermined first vent hole and the predetermined second vent hole extend between one end and the other end of the thermostatic bath in a predetermined direction perpendicular to the predetermined direction,
The gas circulation means has a plurality of rotatable impellers,
The impellers are arranged side by side in a predetermined direction perpendicular to the predetermined direction.

Further, the present invention provides a temperature adjustment space between the impeller and one end portion of the thermostatic chamber in which the predetermined first ventilation hole is formed, in a plurality of predetermined directions in the extending direction of the predetermined first ventilation hole. Having partition plates that divide into spaces,
The heating means heats a predetermined gas in each predetermined space partitioned by the partition plate.

  Further, the present invention is characterized in that it includes temperature holding control means for stopping the functions of the temperature holding means all at once, or causing the temperature holding means whose functions are stopped to function simultaneously.

The present invention also provides a method for testing a semiconductor device using the burn-in device,
The semiconductor device testing method is characterized in that one state acquisition unit is connected to the state detection unit corresponding to each thermostat in order to be detachable and a predetermined signal is acquired.

  According to the present invention, the semiconductor device is accommodated in a predetermined accommodating space of each of the plurality of constant temperature baths, and is driven by the state detection unit in a state where the atmosphere of the predetermined accommodating space is maintained at a temperature within a predetermined temperature range. A predetermined signal indicating the state of the semiconductor device to be processed is output. By obtaining the predetermined signal, it is possible to know the operating state of the semiconductor device under a predetermined test condition, thereby detecting an initial failure of the semiconductor device.

  Each thermostatic chamber contains one or more semiconductor devices. That is, according to the present invention, the semiconductor device is accommodated by dividing a plurality of thermostats. The predetermined accommodating space is selected to be smaller than the predetermined accommodating space in the conventional thermostat. By reducing the predetermined accommodation space, the temperature holding means can be made simpler and the manufacturing cost can be reduced as compared with the conventional technique.

  In addition, since the temperature holding means is provided in each of the plurality of thermostats, it is possible to accommodate and test semiconductor devices having different test conditions for each thermostat and improve the test efficiency.

  According to the invention, the occupation ratio of the semiconductor device to be accommodated with respect to the volume of the predetermined accommodation space is set to 0.02% or more and less than 0.1% of the volume of the predetermined accommodation space. It becomes easy to diffuse the temperature of the internal atmosphere, and the atmosphere in the predetermined accommodation space can be easily maintained at a temperature within a predetermined range. As a result, the test conditions can be made uniform, and the reliability of the test is improved. When the occupancy rate is less than 0.02%, there are many unnecessary storage spaces for testing, and it is necessary to keep the temperature constant for such storage spaces. For this reason, it is necessary for the temperature holding means to be configured to hold the unnecessary space at a constant temperature, which is wasteful. Further, when the occupation ratio is 0.1% or more, the semiconductor devices are densely packed, so that the atmosphere heated by the heat generated by the semiconductor device itself when the semiconductor device is driven becomes difficult to diffuse, and the predetermined accommodation is achieved. Variations occur in the atmosphere in the space. Further, by setting the occupation ratio within the above range, and even if the driven semiconductor device generates heat, it is prevented that the temperature of the atmosphere is excessively increased due to the heat generated by the semiconductor device, and cooling is performed as in the conventional technique. The temperature holding means can be realized with a simple configuration that does not require an apparatus.

  According to the invention, the identification information output means outputs identification information corresponding to each thermostat held by the identification information holding means. The identification information output means is provided corresponding to the state detection means. By obtaining the identification information, even if there are a plurality of thermostats, it is easy to identify which thermostat chamber the predetermined signal output by the state detection means represents the status of the semiconductor device accommodated in. can do. This facilitates management of signals representing the state of the semiconductor device to be tested, and improves test efficiency.

  Further, according to the present invention, the thermostat body is provided with a thermostat lid, and the thermostat main body and the thermostat lid are moved relative to each other so that the predetermined accommodation space is made a space outside the thermostat. It can be opened or closed from the space outside the thermostat. When the predetermined storage space is closed from the space outside the thermostat by the thermostat body and the thermostat lid, the light emitting part of the light emitting element and the light receiving part of the light receiving element can be arranged close to each other, Thereby, the accuracy of the signal indicating the state of the light emitting element can be increased. Moreover, the light-emitting element and the light-receiving element can be relatively separated from each other by relatively moving the thermostat lid and the thermostat main body to expose the accommodation space to the external space. By disposing the predetermined accommodation space to a space outside the thermostatic chamber, the light emitting element and the light receiving element can be easily arranged in the accommodation space. For example, when a failure occurs in the light receiving element, the light receiving element can be detached, and replacement and repair are facilitated. Moreover, since the replacement of the light emitting element is facilitated, the efficiency of the test is improved.

  According to the invention, the identification information holding means outputs the identification information by applying a predetermined voltage to the output terminal of the signal output means. By representing the identification information by a predetermined voltage, the number of signal lines connected to the identification information holding means for obtaining the identification information can be reduced as much as possible. This is because in the case where the identification information is represented by voltage, for example, only two signal lines are required. This simplifies the device and reduces manufacturing costs.

  According to the invention, the state acquisition unit is detachably connected to the state detection unit, and acquires predetermined information while being attached to the state detection unit. In the connection state, the input terminal of the state acquisition unit and the output terminal of the state detection unit are in point contact. Therefore, for example, even if the state acquisition unit and the state detection unit are repeatedly attached and detached, the contact state between the output terminal and the input terminal can be prevented from changing. This improves the reliability of the test.

  According to the invention, the temperature holding means supplies the heated predetermined gas to the predetermined storage space of the thermostatic bath through the predetermined first vent hole, and the thermostatic bath through the predetermined second vent hole. By exhausting a predetermined gas in the predetermined storage space to the external space, the atmosphere of the predetermined storage space is maintained at a temperature in a predetermined temperature range. When trying to set the atmosphere of the predetermined storage space to a temperature within a predetermined temperature range, for example, if a heating means for heating a predetermined gas is arranged in the predetermined storage space, the temperature of the atmosphere increases as the heating means is approached. Since the temperature of the atmosphere decreases as the distance from the heating means increases, the temperature of the atmosphere in the predetermined storage space may vary, and it may be difficult to maintain the entire predetermined storage space at a temperature within a predetermined temperature range. is there. In the present invention, by supplying a predetermined gas heated from the external space of the thermostatic chamber to the predetermined storage space through the predetermined first vent hole, the temperature of the atmosphere of the entire predetermined storage space is made as uneven as possible. It can be raised in a suppressed state. Moreover, it can prevent that the atmosphere of a predetermined accommodation space rises too much by discharging | emitting predetermined gas of a predetermined accommodation space to external space through the 2nd predetermined ventilation hole. Therefore, it is easy to easily maintain the predetermined temperature of the accommodation space at a temperature within a predetermined temperature range.

  According to the present invention, the predetermined gas in the predetermined temperature adjustment space formed by the temperature adjustment space forming body is heated by the heating unit, and the gas circulation unit blows the predetermined gas in the predetermined temperature adjustment space. It can supply to the predetermined accommodation space through the predetermined first vent hole. Further, the gas circulating means discharges the predetermined gas in the predetermined storage space to the predetermined temperature adjustment space through the predetermined second vent hole, and moves the predetermined gas in the predetermined storage space to the predetermined temperature adjustment space. Can be made. With such a configuration, it is possible to adjust the temperature of the atmosphere in the predetermined storage space by circulating the predetermined gas in the predetermined storage space and the predetermined temperature adjustment space. When the temperature of the atmosphere in the predetermined storage space is lower than the temperature in the predetermined temperature range, the gas circulation unit may supply the predetermined gas heated by the heating unit to the predetermined storage space by blowing air. When the temperature of the atmosphere of the specified storage space becomes higher than the temperature in the predetermined temperature range, heating of the predetermined gas in the predetermined temperature adjustment space by the heating unit is stopped and / or air is blown by the gas circulation unit Can be stopped. With such a simple configuration, the temperature adjusting means can be realized.

  Further, according to the present invention, in a predetermined direction, a predetermined gas is supplied from one end of the thermostatic chamber to the predetermined accommodating space, and a predetermined gas in the predetermined accommodating space is discharged from the other end of the thermostatic bath. Since it can do, it can suppress as much as possible that a predetermined gas retains in the predetermined accommodation space, and it can suppress that the temperature nonuniformity generate | occur | produces in the predetermined accommodation space.

  Further, according to the present invention, it is possible to change a predetermined gas flow toward the semiconductor device supplied from the predetermined first ventilation hole and held at one end in the predetermined direction of the holding means by the wind direction changing means. . A plurality of semiconductor devices are held side by side along a predetermined direction, but a predetermined gas moves from a predetermined first air hole toward a predetermined second air hole, that is, along a predetermined direction. Therefore, the direction of the wind generated by the movement of the predetermined gas is the direction from one of the predetermined directions to the other. Therefore, although the wind is likely to come into contact with the semiconductor device arranged at one side in the predetermined direction, the flow of the predetermined gas supplied from the predetermined first air hole can be changed by the wind direction changing means. Therefore, it is possible to prevent these semiconductor devices from being excessively cooled by the wind. Thereby, the inspection conditions of the semiconductor device on the upstream side and the downstream side in the direction in which the predetermined gas flows can be made as much as possible, and the reliability of the test can be further improved.

  Further, according to the present invention, it is possible to prevent the predetermined gas flow supplied from one of the predetermined directions from being disturbed by the wind direction changing means as much as possible, and to smoothly change the predetermined gas flow. can do. As a result, the predetermined gas supplied from the predetermined first vent hole is prevented from staying in the predetermined processing space, and the occurrence of uneven temperature in the predetermined processing space is reduced as much as possible. can do.

  Further, according to the present invention, by arranging the semiconductor devices in a direction perpendicular to the direction in which the predetermined gas flows, the wind contacting each semiconductor device held by the holding means is made as equal as possible between the semiconductor devices. Therefore, the inspection conditions of the semiconductor device can be made as uniform as possible, and the reliability of the test can be improved.

  According to the invention, the predetermined first vent hole and the predetermined second vent hole extend between one end and the other end of the thermostatic bath in a predetermined direction perpendicular to the predetermined direction. Therefore, the predetermined first vent hole and the predetermined second vent hole are determined depending on the size of the thermostatic bath. Therefore, the larger the thermostatic chamber, the longer the predetermined first vent hole and the predetermined second vent hole extend in a predetermined direction. Even in such a case, a plurality of impellers are arranged in a predetermined direction perpendicular to the predetermined direction and rotated to be supplied from the predetermined first ventilation hole in the predetermined direction. The amount of the predetermined gas and the amount of the predetermined gas discharged from the predetermined second ventilation hole can be made as uniform as possible. As a result, the inspection conditions of the semiconductor device in the direction in which the semiconductor devices are arranged, that is, the predetermined direction can be aligned as much as possible, and the reliability of the test can be further improved.

  Further, according to the present invention, the predetermined gas that is moved by the rotation of the impeller flows into the predetermined spaces partitioned by the partition plates. The predetermined gas that is moved by the impeller may not be uniform in the vicinity of the rotation axis of the impeller and in a region away from the rotation axis, but the size of the predetermined space partitioned by the partition plate is adjusted. Thus, even when the predetermined gas moving as described above is not uniform because the heating means heats the predetermined gas in each predetermined space, the temperature of the predetermined gas supplied from each predetermined space Can be made substantially uniform. Thereby, the uniformity of the temperature of the heated predetermined gas supplied from the predetermined first vent hole to the predetermined accommodating space in the extending direction of the predetermined first vent hole can be further improved.

  Further, according to the present invention, by providing the temperature holding control means, the functions of the respective temperature holding means can be stopped simultaneously, and the temperature holding means whose functions are stopped can be simultaneously operated. The temperature of the atmosphere in the predetermined internal space of all the thermostats can be raised, for example, or lowered all at once. Thereby, the start time and end time of the test can be made uniform in each temperature holding means, the test conditions of the semiconductor devices accommodated in different thermostats can be made uniform, and the reliability of the test is further improved.

  In addition, according to the present invention, one state acquisition unit is connected to the state detection unit corresponding to each thermostat in order to be detachable in order, and a predetermined signal is acquired. The semiconductor device can be tested without providing only. Since the inspection is performed by such a test method, the configuration of the apparatus can be simplified and the manufacturing cost of the apparatus can be reduced.

  FIG. 1 is a functional block diagram showing the configuration of a burn-in apparatus 10 according to an embodiment of the present invention, FIG. 2 is a diagram schematically showing the appearance of the burn-in apparatus 10, and FIG. It is a block diagram which expands and shows a part. The burn-in apparatus 10 performs an aging test of a semiconductor device that is a device under test. In the present embodiment, the semiconductor device is, for example, a semiconductor laser element 11 which is a light emitting element. In the aging test, the reliability of the semiconductor device is tested by detecting the state of the semiconductor device when the semiconductor device is driven and stressed in a predetermined temperature environment that is higher than normal temperature, and initial failure A semiconductor device that is likely to become a device is detected.

  The burn-in device 10 includes first to n-th thermostats 12a1 to 12an, first to n-th temperature holding units 13a1 to 13an, first to n-th state detection units 14a1 to 14an, and first to n-th identification information. Holding units 15 a to 15 an and state acquisition unit 16 are included. The symbol n represents a positive integer of 2 or more. When generically referring to the first to n-th thermostats 12a1 to 12an, they may be simply referred to as the thermostat 12. When the first to nth temperature holding units 13a1 to 13an are collectively referred to, the temperature holding unit 13 may be simply described. When the first to nth state detection units 14a1 to 14an are collectively referred to, the state detection unit 14 may be simply described. When the first to nth identification information holding units 15a1 to 15an are collectively referred to, the identification information holding unit 15 may be simply described.

  The plurality of thermostatic chambers 12 each have a predetermined first accommodation space 21 in which the semiconductor laser element 11 that is a semiconductor device can be accommodated. Hereinafter, the predetermined first accommodation space 21 is simply referred to as the accommodation space 21. As shown in FIG. 2, the plurality of thermostats 12 are provided independently. That is, each of the first accommodation spaces 21 is provided independently. As shown in FIG. 2, the thermostats 12 are placed side by side on the shelf 17, for example. Further, a plurality of semiconductor laser elements 11 can be accommodated in the first accommodating space 21 of the thermostatic chamber 12 as shown in FIG.

  The temperature holding means 13 is provided in each thermostat 12. The temperature holding means 13 holds the predetermined atmosphere of the accommodation space 17 of the thermostatic bath 12 at a temperature within a predetermined temperature range.

  The state detection unit 14 is provided corresponding to each thermostat 12, drives the semiconductor laser element 11 accommodated in each thermostat 12, and outputs a predetermined signal representing the state of the semiconductor laser element 11. In the present embodiment, each state detection unit 14 includes a drive unit 22 that drives the semiconductor laser element 11 that is a light emitting element, a light receiving unit 23 that receives light emitted from the semiconductor laser element 11, and a state of the semiconductor laser element 11. And an output unit 24 for outputting a predetermined signal. The driving unit 22, the light receiving unit 23, and the output unit 24 corresponding to the first to nth state detection units 14a1 to 14an, respectively, are respectively referred to as the first to nth driving unit 22an, the first to nth light receiving units 23a1 to 23an, and The first to nth output units 24a1 to 24an are described. When the first to nth drive units 22an are collectively referred to, the drive unit 22 may be simply described. When the first to nth light receiving units 23a1 to 23an are collectively referred to, they may be simply referred to as the light receiving unit 23. When the first to n-th output units 24a1 to 24an are collectively referred to, they may be simply referred to as the output unit 24.

  In the present embodiment, the aging test of the semiconductor laser element 11 evaluates the change in the drive current of the semiconductor laser element 11 when the semiconductor laser element 11 is driven so that the light quantity is constant under a predetermined temperature environment. It is done by doing. Such a test is called an APC (Automatic Power Control) test. The predetermined temperature is higher than the ambient temperature of the constant temperature bath 12 which is normal temperature, and is selected, for example, from 50 ° C. to less than 80 ° C. By setting the temperature higher than the room temperature, it is possible to shorten the test period by deteriorating the semiconductor laser element 11.

  The light receiving means 23 detects the amount of light of the driven semiconductor laser element 11. The light receiving means 23 includes a light receiving element 23A. The light receiving element 23A is realized by a photodiode such as an indium gallium arsenide (InGaAs) photodiode. Even if the InGaAs photodiode is housed in the same thermostatic chamber 12 as the semiconductor laser element 11 because the change in dark current is small even if the temperature of the atmosphere in which it is arranged changes, the light quantity of the semiconductor laser element 11 can be accurately detected. can do. In the present embodiment, each light receiving means 23 includes a plurality of light receiving elements 23A.

  The drive unit 22 drives the semiconductor laser element 11 accommodated in the first accommodation space 21, that is, gives a drive current to the semiconductor laser element 11. When the plurality of semiconductor laser elements 11 are accommodated in the first accommodation space 21, the drive unit 22 drives all of the plurality of semiconductor laser elements 11 accommodated in the first accommodation space 21. Further, the drive unit 22 adjusts the drive current applied to each semiconductor laser element 11 based on the light quantity of each semiconductor laser element 11 detected by each light receiving means 23 so that the light quantity becomes constant, and each semiconductor laser element. A driving current is given to 11. The drive unit 22 gives a signal representing the drive current of the semiconductor laser 11 to the output unit 24. In the present embodiment, the predetermined signal representing the state of the semiconductor device is a signal representing the drive current of the semiconductor laser element 11 in the APC test. In FIG. 2, the drive unit 22 is shown being included in the constant temperature bath 12, and in FIG. 3, the drive unit 22 is shown separately from the constant temperature bath 12.

  The output unit 24 is realized including a connector. The output unit 24 includes a plurality of drive current output terminals 24 </ b> A that output a signal representing the drive current of each semiconductor laser element 11 to the outside. The output unit 24 includes a plurality of identification information output terminals 24B that output identification information given from an identification information holding unit 15 described later to the outside. The output unit 24 is identification information output means.

  The identification information holding unit 15 is provided corresponding to each thermostat 12 and holds individual identification information of each thermostat 12. The identification information holding unit 15 gives identification information to the output unit 24 described above.

  The state acquisition unit 16 acquires a signal representing a drive current, which is a predetermined signal representing the state of each semiconductor laser element 11 output from the output unit 24, and identification information. The state acquisition unit 16 converts the input unit 26 connected to the output unit 24 and the predetermined signal and identification information given from the input unit 26 into predetermined processing signals that can be processed by the calculation measurement display unit 28 described later. It includes a switching unit 27 for conversion, and a calculation measurement display unit 28 that can store information representing a predetermined signal and identification information and display them on the display unit 29. The input unit 26 is realized including a connector. The input unit 26 is connected to the switching unit 25 via the harness 30. The switching unit 27 converts the number of bits when, for example, the number of bits of a signal supplied from the input unit 26 is different from the number of bits of a signal that can be processed by the calculation measurement display unit 26. In another embodiment of the present invention, the switching unit 27 may be omitted when the number of bits of a signal supplied from the input unit 26 is the same as the number of bits of a signal that can be processed by the calculation measurement display unit 26.

  Arithmetic measurement display unit 26 is realized by a personal computer, for example, a notebook personal computer in the present embodiment. The calculation measurement display unit 26 includes a control unit, a storage unit, and a display unit 29. The control unit controls the storage unit and the display unit 29 and causes the storage unit to store information representing a predetermined signal given from the switching unit 27. The switching unit 27 is connected to the calculation measurement display unit 26 via, for example, a PC card. Further, the control unit causes the display unit 29 to display information representing the acquired predetermined signal. The storage unit is realized by a nonvolatile storage medium such as a flash ROM and a hard disk. The display unit 29 is realized by, for example, a liquid crystal display panel and a cathode ray tube (abbreviated as CRT).

  The state acquisition means 16 acquires a predetermined signal indicating the state of the semiconductor laser element 11, and displays information indicating the predetermined signal on the display unit 29, so that the user can change the state of each semiconductor laser element 11. Can be grasped. Depending on the state of the semiconductor laser element 11, the reliability of the semiconductor laser element 11 is known. That is, it can be confirmed whether or not the semiconductor laser element 11 is defective.

  Hereinafter, the thermostatic chamber 12 and the temperature holding unit 13 may be referred to as the thermostatic chamber unit 100 in some cases.

  FIG. 4 is a front view of the thermostatic chamber unit 100, and shows a state in which the first accommodation space 21 is opened to a space outside the thermostatic chamber 12. FIG. 5 is a cross-sectional view of the thermostatic chamber unit 100 as seen from the cutting plane line VV in FIG. FIG. 6 is a cross-sectional view of the thermostatic chamber unit 100 showing a state where the first accommodation space 21 is closed from the space outside the thermostatic chamber 12 in FIG. 5. FIG. 7 is a cross-sectional view of the thermostatic chamber unit 100 as viewed from the cutting plane line VII-VII in FIG. FIG. 8 is a cross-sectional view of the thermostatic chamber unit 100 as viewed from the cutting plane line VIII-VIII in FIG. In FIG. 7, in order to prevent the drawing from being complicated, the semiconductor laser element 11 and the thermostatic chamber main body mounting portion 37 disposed in the first accommodation space 21 are omitted.

  The constant temperature bath 12 includes a constant temperature bath main body 31 and a constant temperature bath lid 32, and has a predetermined first accommodation space 21 in which the semiconductor laser element 11 can be accommodated. The thermostatic bath lid 31 is provided in the thermostatic bath main body 32. The thermostatic chamber lid 32 is provided in the thermostatic chamber main body 31 so that the first accommodating space 21 can be opened to the space outside the thermostatic chamber 12 and the first accommodating space 21 can be closed from the space outside the thermostatic chamber 12. . The state where the first storage space 21 is opened to the space outside the thermostat 12 is referred to as an open state, and the state where the first storage space 21 is closed from the external space of the thermostat 12 is referred to as a closed state. The thermostat 12 is formed of a metal material such as stainless steel and iron.

  The thermostatic chamber body 31 has a substantially bottomed cylindrical inner peripheral surface. The opening 33 of the thermostatic bath body 31 is formed in a substantially rectangular shape. The thermostatic bath lid body 32 has a rectangular plate shape, and the surface facing the first storage space 21 in a closed state is formed in a substantially flat surface. One end 34 of the thermostatic chamber lid 32 is connected to one end 36 of the opening 33 of the thermostatic chamber main body 31 by a hinge 35. The thermostatic chamber lid 32 can be angularly displaced about the axis L1 of the hinge portion 35, and in the closed state, contacts the opening 33 to close the opening. When the thermostatic bath lid 32 is angularly displaced from the closed state around the axis L1 in the direction of the arrow A1 shown in FIG. 5, the inner peripheral surface of the thermostatic bath main body 31 is exposed. The first accommodation space 21 of the thermostatic bath 12 is a substantially rectangular parallelepiped shape in the closed state, and is a region surrounded by the inner peripheral surface of the thermostatic bath 12. In the present embodiment, the substantially plane includes a plane.

  In the closed state, the dimension between the inner peripheral surfaces of the thermostat 12 in the first direction A1 parallel to the direction in which the axis L1 extends is W1, and the second direction B2 is perpendicular to the first direction B1. When the dimension between the inner peripheral surfaces of the thermostatic bath 12 along the direction is W2, and the dimension W3 between the inner peripheral surfaces of the thermostatic bath 12 in the direction along the third direction B3 perpendicular to the first direction and the second direction, W1 is , 200 millimeters (mm) to 500 millimeters (mm), W2 is chosen from 100 millimeters (mm) to 300 millimeters (mm), and W3 is chosen from 25 millimeters (mm) to 80 millimeters (mm) It is. In the present embodiment, for example, W1 = 350 mm, W2 = 170 mm, and W3 = 50 mm are selected.

  The constant temperature bath 12 accommodates the plurality of semiconductor laser elements 11 in the first accommodation space 21. The thermostat main body 31 has a thermostat main body side mounting portion 37 for detachably mounting the plurality of semiconductor elements 11. The thermostat body side mounting portion 37 is fixed to the thermostat body 31. The plurality of semiconductor laser elements 11 are detachably mounted on the thermostat body side mounting portion 37 of the thermostat body 31. The thermostat main body side mounting portion 37 includes a socket 47. The semiconductor laser element 11 is detachably attached to the socket 47. The semiconductor laser element 11 accommodated in the first accommodating space 21 is provided with a heat radiating plate 48. By providing the heat radiating plate 48, the heat generated by the burned-in semiconductor device itself is easily released into the thermostat 32, and the heat generated by each semiconductor device itself is made uniform. The heat radiating plate 48 is formed of a material having high thermal conductivity, and is formed of, for example, copper, aluminum, stainless steel, or the like.

  The thermostat main body side mounting portion 37 holds the plurality of semiconductor laser devices 11 from the region near one end in the first direction B1 to the region near the other end of the thermostat main body 31 and at the center in the second direction B2. To do. The semiconductor laser elements 11 are held by the thermostat body side mounting portion 37 as a holding means in a state of being arranged in a line along the first direction B1. About 10 to 100 semiconductor laser elements 11 are accommodated in the first accommodating space 21, and in this embodiment, 20 semiconductor laser elements 11 are accommodated. The thermostat body side mounting part 37 holds the semiconductor laser element 11 so that the light emitting part 11 </ b> A faces outward from the opening of the thermostat body 31. The heat radiating plate 48 is provided in each semiconductor laser element 11 so that the thickness direction thereof is parallel to the third direction B3 on both sides of the semiconductor laser element 11 in the second direction B2.

  The thermostatic bath lid 32 has a thermostatic bath lid mounting portion 39 for detachably mounting a plurality of light receiving elements 23A of the light receiving means 23. The plurality of light receiving elements 23 </ b> A of the light receiving means 23 are detachably mounted on the thermostatic chamber lid 32 by the thermostatic chamber lid mounting portion 39. The thermostatic chamber lid side mounting portion 39 is detachably fixed to the thermostatic chamber lid 32 by, for example, a screw member in a state slightly spaced from the thermostatic chamber lid 32. The plurality of light receiving elements 23 </ b> A of the light receiving means 23 face the semiconductor laser device 11 held in the thermostatic chamber body side mounting portion 37 in the closed state. In the closed state, the light receiving portions 23B of the plurality of light receiving elements 23A and the light emitting portions 11A of the plurality of semiconductor laser devices 11 face each other with a slight gap T1. The gap T1 is selected, for example, from 0.2 millimeters (mm) to 3 millimeters (mm).

  The occupation ratio of the semiconductor device to be accommodated with respect to the volume of the first accommodation space 21, that is, the semiconductor laser device 11, is selected to be 0.02% or more and less than 0.1% of the volume of the first accommodation space 21. When the occupancy rate is less than 0.02%, there are many unnecessary storage spaces for testing, and it is necessary to keep the temperature constant for such storage spaces. For this reason, it is necessary for the temperature holding unit 13 to be configured so as to hold the unnecessary space at a constant temperature, which is wasteful and the efficiency of the test is deteriorated.

  When the occupation ratio is 0.1% or more, the semiconductor laser elements 11 are densely packed, and the atmosphere heated by the heat generated by the semiconductor laser elements 11 when the semiconductor laser elements 11 are driven diffuses. It becomes difficult, and the atmosphere in the predetermined accommodation space will vary. By setting the occupation ratio to 0.02% or more and less than 0.1% of the volume of the first accommodation space 21, it becomes easy to diffuse the temperature of the atmosphere in the first accommodation space 21, and the predetermined accommodation is performed. It is easy to maintain the atmosphere in the space at a temperature within a predetermined range. Even if the temperature holding unit 13 is not given excessive performance, the atmosphere in the predetermined accommodation space can be held at a temperature within a predetermined range, and the manufacturing cost of the apparatus can be reduced. Even if the driven semiconductor laser element 11 generates heat, the temperature of the atmosphere is prevented from excessively rising due to the heat generated by the semiconductor laser element 11, and a simple configuration that does not require a cooling device as in the prior art. Thus, the temperature holding unit 13 can be realized.

  At the other end of the opening 33 of the thermostatic chamber main body 31, a lid detection unit 41 that detects whether it is in a closed state or an open state is provided. The lid detection unit 41 is realized by, for example, a push button switch. In the closed state, when the operation piece 41A of the push button switch is pressed by the free end portion 42 of the thermostatic chamber lid 32, the contact of the push button switch is closed. In the open state, the constant temperature chamber lid 32 is angularly displaced, so that the load applied to the operation piece 41A of the push button switch is eliminated, and the contact of the push button switch is opened. The state detection unit 41 is connected to the drive unit 22. The drive unit 22 determines whether the contact is closed or open by, for example, passing a direct current through the contact. If the contact is closed, the drive unit 22 drives the semiconductor laser element 11 or opens the contact. If so, the driving of the semiconductor laser element 11 is stopped.

  An engaging portion 43 is formed at the free end portion 42 of the thermostatic bath lid 32. The thermostat body 31 is provided with a locking portion 44 that engages with the engaging portion 43 and locks the thermostatic bath lid body 32 in a closed state. In the closed state, the thermostatic bath body 31 and the thermostatic bath lid body 32 can be brought into close contact with each other by engaging and locking the engaging portion 43 with the locking portion 44. Thereby, it is possible to prevent the air in the first accommodation space 21 from leaking from between the thermostat body 31 and the thermostat lid body 32 to the space outside the thermostat 21 and improve the airtightness. . Further, the engaging portion 43 and the engaging portion 44 prevent the thermostatic bath lid body 32 from being undesirably angularly displaced. For example, during the aging test of the semiconductor laser element 11, the first accommodating space 21 is kept in the thermostatic bath. 21 is prevented from being opened to the external space. In the present embodiment, the predetermined gas is air.

  The thermostat 12 is provided with the temperature holding unit 13 described above. The temperature holding unit 13 holds the heating unit 51, the air blowing unit 52, the heating unit 51, and a part of the air blowing unit 52, and a temperature holding unit housing 55 that forms a predetermined second accommodating space 54. In addition, a temperature control unit 56 that controls the heating unit 51 and the air blowing unit 52 is included. The temperature holding unit housing 55 is a temperature adjustment space forming body, and is provided at one end of the constant temperature bath 12 in the third direction B3. The predetermined second accommodation space 54 is a predetermined temperature adjustment space. The temperature holding unit housing 55 is a temperature adjustment space forming body. Hereinafter, the predetermined second accommodation space 54 may be simply referred to as the accommodation space 54.

  Predetermined first and second vent holes 57 and 58 are formed in the thermostatic chamber body 32 facing the first accommodation space 21. Hereinafter, the predetermined first ventilation hole 57 is simply referred to as a first ventilation hole 57, and the predetermined second ventilation hole 58 is simply referred to as a ventilation hole 58. The first and second vent holes 57 and 58 penetrate the thermostat body 32 in the third direction B3 at the respective end portions 103 and 104 in the first direction B1. The first and second vent holes 57 and 58 are formed between both end portions 105 and 106 in the second direction B2 of the thermostatic chamber body 32, and are formed in a long hole shape. The first and second vent holes 57 and 58 are formed outside the semiconductor laser element 11 held by the thermostatic chamber body mounting portion 37 in the first direction B1. The first and second vent holes 57 and 58 communicate with the second accommodation space 54 of the temperature holding unit housing 55.

  The heating unit 51 heats the atmosphere of the second accommodation space 54. The heating unit 51 is realized including, for example, a nichrome wire heater 51A, and heats the atmosphere of the second accommodation space 54 by generating heat. In the present embodiment, a Nichrome wire heater manufactured by Sakaguchi Electric Heat Company, model SN-041010, rated 100 V, 100 W was used as the heating unit 51. The second accommodation space 54 is selected to have the same size as the volume of the first accommodation space 21.

  The air blowing unit 52 is a gas circulation unit, and includes a rotation driving unit 61, an impeller 62, and a flywheel 63. The rotation drive unit 61 is realized by a motor, for example. In the present embodiment, a rotary motor 61 that is an AC motor is used as the rotation drive unit 61. The impeller 62 is fixed to the rotation shaft 64 of the rotation drive unit 61, and rotates in a predetermined direction around the rotation axis L <b> 2 of the rotation shaft 64 by driving the rotation drive unit 61. The impeller 62 rotates around the rotation axis L2, thereby pumping air in a direction away from the rotation axis L2, that is, moving the air. The flywheel 63 is fixed to the rotation shaft 64 of the rotation drive unit 61. The flywheel 63 is not disposed in the second accommodation space 54 but is disposed outside the temperature holding unit housing 55. The flywheel 63 is provided between the impeller 62 and the main body of the rotation drive unit 61 that rotates the rotation shaft 64. By providing the flywheel, it is possible to prevent a sudden change in the rotational speed of the rotation drive unit 61, thereby stabilizing the blowing by the impeller 62. A rotation axis L2 of the rotation shaft 64 of the rotation drive unit 61 extends along the third direction B3 and passes through the central portion of the thermostatic chamber 12. Part of the impeller 62 and the rotating shaft 64 is accommodated in the second accommodating space 54.

  In the third direction B <b> 3, the impeller 62 is provided in the thermostat 12 by being separated by a predetermined distance T <b> 2. The predetermined distance T2 is selected from 20 millimeters (mm) to 30 millimeters (mm), for example.

  The temperature holding unit housing 55 is provided with a wind direction control plate 65. The wind direction control plate 65 adjusts the air flow so that the air pumped by the impeller 62 flows in a predetermined direction. The wind direction control plate 65 has an arc-shaped inner peripheral surface centered on the rotation axis L2. The wind direction control plate 65 is realized by a plate-like member, and is formed so that the inner peripheral surface covers substantially half the circumference of the impeller 62 on the outer side in the radial direction of the rotation axis L <b> 2 of the impeller 62. The wind direction control plate 65 moves the impeller 62 from the opposite side of the first direction B1 to the side where the first vent hole 57 is formed across the impeller 62 so as to pump air to the first vent hole 57 side. cover. Further, the wind direction control plate 65 is provided with end portions 65A and 65B of its inner peripheral surface outside the second direction B2 of the rotation axis L2.

  In addition, the temperature holding unit housing 55 receives the first flow path forming unit 66 for guiding the air that is moved by the rotation of the impeller 62 to the first vent hole 57 and the air flowing in from the second vent hole 58. A second flow path forming portion 67 for guiding to the impeller 62 is provided. The first flow path forming portion 66 is closer to the thermostatic chamber 12 than the impeller 62, and is closer to the first through hole 57 than the rotation axis L2, and from the outer peripheral portion of the impeller 62 to the first vent hole 57. Formed between. Air that moves as the impeller 62 rotates by the first flow path forming unit 66 is sent to one side in the first direction B1, as indicated by an arrow F1 in FIG. The air sent in one of the first directions B1 is sent from the end of the temperature holding unit housing 55 in the first direction B1 to the other in the third direction B3, as shown by the arrow F2 in FIG. It passes through the first ventilation hole 57 and flows into the first accommodation space 21. The air that has flowed into the first accommodation space 21 travels in the other direction in the first direction B1, as indicated by an arrow F3 in FIG. In the first accommodating space 21, the air sent to the other of the first direction B1 is in the third direction B3 as shown by an arrow F4 in FIG. And flows through the second ventilation hole 58 and flows into the second accommodation space 54 by the suction force generated by the rotation of the impeller 62. The air that has flowed into the second storage space 54 is guided to one side of the rotation axis L2 of the impeller 62 by the second flow path forming portion 67 as indicated by an arrow F5 in FIG. The second flow path forming portion 67 is closer to the thermostatic chamber 12 than the impeller 62 and is closer to the second through hole 58 than the first flow path forming portion 66 from the outside of the outer peripheral portion of the impeller 62. It is formed between the second vent hole 58. As the impeller 62 rotates in this manner, air in the first accommodation space 21 and the second accommodation space 54 can be circulated.

  The temperature holding unit housing 55 is provided with a protective member 64 that protects the rotation driving unit 61 that protrudes to one side of the temperature holding unit housing 55 in the third direction B3. The protection member 64 protrudes to one side of the temperature holding unit housing 55 in the third direction B3 and covers the rotation driving unit 61 from the outside around the rotation axis L2.

  The heating unit 51 is provided in the second accommodation space 54 on the side opposite to the wind direction control plate 65 with the impeller 62 interposed therebetween. The nichrome wire heater 51 </ b> A that is the heating unit 51 has a portion that extends in parallel with the second direction B <b> 2 across both ends of the temperature holding unit housing 55 in the second direction B <b> 2. Specifically, the nichrome wire heater 51A includes a first heater portion 68 disposed in parallel with the second direction B2 from one end portion in the second direction B2 of the temperature holding unit housing 55 to the other end portion, and one end. The second heater portion 69 is connected to the end portion of the first heater portion 68 and is bent by 180 degrees (°), and the other end portion of the second heater portion 69 is connected to the second direction B2 of the temperature holding unit housing 55. 3rd heater part 70 arrange | positioned in parallel with 2nd direction B2 toward the one end part. The nichrome wire heater 51 </ b> A is fixed to the temperature holding unit casing 55 by the heater holding unit 80 at a predetermined interval from the temperature holding unit casing 55. The first heater part 68 and the third heater part 70 are formed slightly shifted in the third direction B3. As a result, the air that is moved by the rotation of the impeller 62 easily comes into contact with the nichrome wire heater 51A, and the heating efficiency of the air is improved.

FIG. 9 is a diagram illustrating an electrical configuration of the temperature control unit 56. In addition to the temperature control unit 56, the nichrome wire heater 51 </ b> A and the rotation driving unit 61 are also shown in FIG. 9. The temperature control unit 56 includes a temperature detection unit 71, a temperature adjustment unit 72, a first comparison unit 73, a second comparison unit 74, a constant voltage generation unit 75, and a relay unit 76. The temperature detector 71 detects the temperature in the first accommodation space 21. The temperature detection unit 71 is realized including, for example, a thermistor TH. One end of the thermistor TH is connected to a plus (+) terminal of a _DC constant voltage power supply _VDC . The other end of the thermistor TH is connected to the temperature adjustment unit 72 and the second comparison unit 73.

  The temperature adjustment unit 72 includes a changeover switch SW, a first resistor R1, a second resistor R2, a first variable resistor VR1, and a second variable resistor VR2. The changeover switch SW is realized by a three-terminal switch, for example, and the other end of the thermistor is connected to the common contact 78. One end of the first resistor R1 is connected to the first individual contact 79A of the changeover switch SW, and one end of the second resistor R1 is connected to the second individual contact 79B of the changeover switch SW. One end of the first variable resistor VR1 is connected to the other end of the first resistor R1. One end of the second variable resistor VR2 is connected to the other end of the second resistor R2. The other ends of the first and second variable resistors VR1 and VR2 are grounded. The resistance values of the first resistor R1 and the second resistor R2 are different from each other.

The first comparison unit 73 includes a first comparator IC1, third, fourth and fifth resistors R3, R4, R5, a first capacitor C1, and a power supply connection resistor R20. One end of the fifth resistor R5 is connected to the positive input terminal of the first comparator IC1, and the other end of the fifth resistor R5 is connected to the other end of the thermistor TH and the common contact 78 of the changeover switch SW. Is done. The negative input terminal of the first comparator IC1 is connected to one end of the first power connection resistor R20. The other end of the first power supply connection resistor R20 is connected to a plus (+) terminal of a _DC constant voltage power supply _VDC . One end of the third resistor R3 is connected to the negative input terminal of the first comparator IC1. The other end of the third resistor R3 is grounded. Furthermore, one end of the fourth resistor R4 and one end of the first capacitor C1 are connected to the negative input terminal of the first comparator IC1. The other end of the fourth resistor R4 and the other end of the first capacitor C1 are connected to the output terminal of the first comparator IC1. The fourth resistor R4 is a feedback resistor for amplifying the signal. The first capacitor C1 prevents oscillation when a signal is amplified.

  The second comparison unit 74 includes a second comparator IC2, sixth and seventh resistors R6 and R7, and a second power connection resistor R10. One end of a sixth resistor R6 is connected to the negative input terminal of the second comparator IC2. The other end of the sixth resistor R6 is connected to the output terminal of the first comparator IC1. One end of a seventh resistor R7 is connected to the positive input terminal of the second comparator IC2. The other end of the seventh resistor R7 is connected to the output terminal of the second comparator IC2. One end of the second power connection resistor R10 is connected to the positive input terminal of the second comparator IC2. The other end of the second power connection resistor R10 is connected to the constant voltage generator 75.

The constant voltage generator 75 is connected to the plus (+) terminal of the _DC constant voltage power supply _VDC , and generates a predetermined voltage Va.

The relay unit 76 includes a solid state relay SSR, a transistor TR, eighth and ninth resistors R8 and R9, and a light emitting diode (Light Emitting Diode) LED. The anode of the light-mitting diode LED is connected to the positive input connected to one internal path of the solid state relay SSR. The cathode of the light-mitting diode LED is connected to a _DC constant voltage power supply _VDC . The negative input connected to one internal path of the solid state relay SSR is connected to one end of the ninth resistor R9. The transistor Tr is realized by a field effect transistor, for example, and the other end of the ninth resistor R9 is connected to the drain of the transistor Tr. One end of the eighth resistor R8 is connected to the gate of the transistor Tr, and the other end of the eighth resistor R8 is connected to the output terminal of the second comparator IC2. The source of the transistor Tr is grounded.

One end of the solid state relay SSR connected to the other internal path is connected to the heater connector 81 and is connected to one end of the nichrome wire heater 51A via the heater connector 81. The other end portion of the nichrome wire heater 51 </ b> A is connected to the heater connector 81, and is connected to one terminal of an AC motor that is the rotation driving unit 61 via the heater connector 81. One terminal of the AC motor is connected to one terminal of the _AC power supply VAC through a power connector 82. The other end connected to the other internal path of the solid state relay SSR is connected to the other terminal of the AC motor. The other terminal of the AC motor is connected to the other terminal of the _AC power supply VAC via the power connector 82. The AC power supply is a commercial AC power supply, for example, the voltage is 100V. The voltage of the DC constant voltage power source _VDC described above is selected to be 12V, for example.

By connecting the common contact 78 of the changeover switch SW to the first or second individual contact 79A, 79B, the potential divided by the thermistor TH, the first resistor R1, and the first variable resistor VR1, or the thermistor TH. The potential divided by the second resistor R2 and the second variable resistor VR2 is applied to the first comparison unit 73 via the fifth resistor R5. The first comparator IC1 compares the potential obtained by stepping down with the power supply connection resistor R20, and if the divided potential is large, the first comparator IC1 has a voltage higher than the predetermined voltage Va output from the constant voltage generator 75. A high (H) level signal is output. The first comparator IC1 compares the voltage of the DC constant voltage power source _{VDC with} the potential obtained by stepping down the voltage by the power source connection resistor R20. If the divided potential is the same or smaller, the first comparator IC1 A low (L) level signal that is lower than the predetermined voltage Va output by 75 is output.

  For example, when the temperature of the first accommodating space 21 becomes lower than a predetermined temperature, the resistance value of the thermistor TH decreases, and thereby the divided potential drops, and the first comparator IC is set to the high (H) level. The signal is output. Further, when the temperature of the first accommodating space 21 becomes higher than a predetermined temperature, the resistance value of the thermistor TH rises, whereby the divided potential is lowered, and the first comparator IC has a low (L) level. The signal is output.

  When a high (H) level voltage is output from the output terminal of the first comparator IC1 compared to the output voltage of the constant voltage generator 75 connected to the positive input terminal of the second comparator IC2 at the next stage, 2 A high (H) level voltage is output from the output terminal of the comparator IC2. As a result, the source and drain of the transistor Tr are conducted, and a direct current flows through the internal path of the solid state relay SSR. As a result, the other internal path of the solid state relay SSR becomes conductive, and an AC voltage is applied to the nichrome wire heater 51A and the AC motor. When an AC voltage is applied to the nichrome wire heater 51A and the AC motor, the heating unit 51, that is, the nichrome wire heater 51A generates heat to heat the atmosphere in the second housing space 54, and the impeller 62 rotates around the axis L2. As a result, the air heated by the nichrome wire heater 51A is supplied to the first housing space 21, and the temperature of the atmosphere in the first housing space 21 is raised. At this time, since the light-mitting diode LED emits light, the user can grasp that the temperature holding unit 13 is performing an operation of increasing the temperature in the first accommodation space 21.

  When a low (L) level voltage is output from the output terminal of the first comparator IC1 compared to the output voltage of the constant voltage circuit connected to the positive input terminal of the second comparator IC2 at the next stage, the second comparator A low (L) level voltage is output from the output terminal of IC2. When the voltage at the output terminal of the second comparator IC2 is at a low (L) level, the transistor Tr does not conduct between the source and drain. Therefore, one internal path of the solid state relay SSR is not conducted and the contact is opened, and the other internal path is not conducted and the contact is opened. In this case, AC voltage is not applied to the nichrome wire heater 51A and the AC motor. At this time, since the light-mitting diode LED does not emit light, the user can grasp that the temperature holding unit 13 is not performing an operation of increasing the temperature in the first accommodation space 21.

  The thermistor TH is provided in the first accommodation space 21. When the temperature of the atmosphere in the first accommodating space 21 changes, the resistance value of the thermistor TH changes as described above, and accordingly, the heating unit 51 generates heat and the AC motor operates or the heating unit 51 generates heat. Stops and the AC motor stops. By adjusting the first or second variable resistor VR1, VR2 connected to the common contact 78 and changing these resistance values, the heating unit 51 generates heat, the AC motor operates, or the heating unit 51 The temperature setting at which the heat generation stops and the AC motor stops can be changed. The thermistor TH is provided in the center of the first accommodation space 21, for example. By providing the thermistor TH in the center of the first accommodating space 21, the temperature of the region where the semiconductor laser element 11 is provided can be accurately controlled to a temperature within a predetermined temperature range.

  In the above-described changeover switch SW, the test conditions can be changed by connecting the common contact 78 to the first individual contact 79A or the second individual contact 79B. Further, when the common contact 78 is connected to the first individual contact 79A, the test condition can be changed by changing the resistance value of the first variable resistor VR1. In addition, when the common contact 78 is connected to the second individual contact 79A, the test condition can be changed by changing the resistance value of the second variable resistor VR2. Changing the condition of the test means that the temperature of the atmosphere of the first accommodation space 21 determined in advance can be changed. This changes the voltage divided by, for example, the thermistor TH, the first resistor R1, and the first variable resistor VR1, and for example, divided by the thermistor TH, the second resistor R2, and the second variable resistor VR2. This is because the voltage can be changed.

  Table 1 shows that when the heating unit 51 and the rotation driving unit 61 are controlled by the temperature control unit 56 so that the predetermined temperature range is set to 65 ° C. or more and less than 67 ° C. in the burn-in device 10 of the present embodiment. The result of having measured the temperature of the atmosphere in the storage space 21 is shown. Here, in the first housing space 21, the air temperature was measured at the first to sixth measurement positions Ta <b> 1 to Ta <b> 6 in the region near the peripheral edge of the semiconductor laser element 11 held by the thermostatic chamber main body side holding portion 37.

  As shown in FIG. 4, the first measurement position Ta <b> 1 is held by the thermostatic chamber main body side holding portion 37 in the vicinity of the first ventilation hole 57 and closer to the center in the second direction B <b> 2 of the thermostatic bath 12. In the vicinity of the peripheral edge of the semiconductor laser device 11. Further, as shown in FIG. 4, the second measurement position Ta2 is near the first vent hole 57, and is held by the thermostat main body side holding portion 37, which is closer to the other side than the center in the second direction B2. 11 near the periphery.

  As shown in FIG. 4, the third measurement position Ta <b> 3 is a semiconductor laser held by the thermostatic chamber main body side holding part 37 at the center in the first direction B <b> 1 of the thermostatic chamber 12 and closer to the center in the second direction B <b> 2. In the vicinity of the peripheral edge of the element 11. Further, as shown in FIG. 4, the fourth measurement position Ta4 is the center of the first direction B1, and is closer to the center of the second direction B2 than the center of the second direction B2, and is held by the thermostatic chamber body side holding portion 37. It is the vicinity of the peripheral part.

  As shown in FIG. 4, the fifth measurement position Ta5 is in the vicinity of the second vent hole 58, and is closer to the one side than the center in the second direction B2, and is held by the thermostatic chamber main body side holding portion 37. It is the vicinity of the peripheral part. Further, as shown in FIG. 4, the sixth measurement position Ta6 is a semiconductor laser element held by the thermostatic chamber main body side holding portion 37 near the second vent hole 58 and closer to the other side than the center in the second direction B2. 11 near the periphery.

  As shown in Table 1, the difference between the highest temperature Tmax and the lowest temperature Tmin is 0.9 ° C., and it can be seen that the variation in the temperature of the atmosphere in the first accommodation space 21 is small. With the configuration described above, the variation in the temperature of the atmosphere in the first accommodation space 21 can be kept within 1 ° C. only by controlling the heating unit 51 and the AC motor. Thus, since the variation in the temperature of the atmosphere in the first housing space 21 can be suppressed, the test conditions for the plurality of semiconductor laser elements 11 to be tested can be made substantially uniform. Therefore, the reliability of the test can be improved.

  In the present embodiment, the atmosphere of the first housing space 21 in which the predetermined semiconductor laser element 11 is housed is not directly heated by the nichrome wire heater 51A, but the atmosphere of the second housing space 54 is first heated, The heated atmosphere is sent into the first accommodation space 21 by the blower 52. With such a configuration, it is possible to prevent only the temperature of a part of the atmosphere of the first accommodation space 21 from rising, and to maintain the temperature of the atmosphere of the first accommodation space 21 almost uniformly within a predetermined temperature range. be able to.

FIG. 10 is a circuit diagram showing a configuration of the identification information holding unit 15. The identification information holding unit 15 described above applies a predetermined voltage to the identification information output terminal 24 </ b> B of the output unit 24. In the present embodiment, the identification information holding unit 15 includes third to fifth variable resistors VR3, VR4, and VR5. The third to fifth variable resistors VR3, VR4, and VR5 are realized by tapped resistors. One end portions of the third to fifth variable resistors VR3, VR4, and VR5 are respectively connected to plus (+) terminals of a _DC constant voltage power supply _VDC . The other ends of the third to fifth variable resistors VR3, VR4, and VR5 are grounded.

  Taps of the third to fifth variable resistors VR3, VR4, and VR5 are connected to the identification information output terminal 24B, respectively. The terminal voltage of the tap of the third variable resistor VR3 is the first voltage V1, the terminal voltage of the tap of the fourth variable resistor VR4 is the second voltage V2, and the terminal voltage of the tap of the fifth variable resistor VR5 is the third voltage V3. . The first voltage V1 is made to correspond to the numerical information at the 1's place, the second voltage V2 is made to correspond to the numerical information at the 10's place, the third voltage V3 is made to correspond to the numerical information at the 100th place, By changing the three voltages V1 to V3 to, for example, 10 levels, 1000 types of identification information representing “000” to “999” can be output.

  As described above, in the configuration in which the identification information is represented as numerical information by the voltage for each digit, the identification information can be output by one output line and one ground (GND) line for each digit. Here, three-digit identification information is output. However, if a ground line representing each of the three digits is used in common, the identification information can be output by four wires. For example, when similar identification information is output using a rotary switch, four output lines and one ground line are required for one digit, and three-digit numerical information is output as in this embodiment. In this case, 13 wirings are required even if the ground line is used in common. In contrast, in the present embodiment, even identification information representing three-digit numerical information can be output by four wirings, so that the number of wirings can be reduced. Since the number of wirings can be reduced, the manufacturing cost of the device can be reduced, and assembly when manufacturing the device is facilitated.

  The state acquisition unit 16 acquires signals corresponding to the first to third voltages V1 to V3. In the information acquisition unit 16, the identification information output as a voltage from the output unit 24 is processed by an analog / digital (A / D) conversion unit that converts the identification information into a digital signal. The calculation measurement display unit 27 of the state acquisition unit 16 includes a storage unit, and the storage unit stores information on signals corresponding to the first to third voltages V1 to V3 and the identification number of the thermostatic bath 12 in a table. doing. In the calculation measurement display part 27, the identification number of the thermostat 12 is known based on the information regarding the signals corresponding to the acquired first to third voltages V1 to V3 and the table. As a result, it can be understood from which thermostat 12 the semiconductor laser element 11 that the predetermined signal acquired by the state acquisition unit 16 is obtained, so that the predetermined signal indicating the state of each semiconductor laser element 11 can be easily obtained. Can be managed.

  11 is a plan view showing the input connector unit 91 of the input unit 26 of the state acquisition unit 16, FIG. 12 is a front view of the input connector unit 91, and FIG. 13 is a side view of the input connector unit 91. FIG. 14 is a plan view showing the output connector 92 of the output unit 24 that outputs a predetermined signal and identification information, and FIG. 15 is a plan view showing the output connector 92. 16 is a plan view showing the input connector portion 91 and the output connector portion 92 connected to each other. FIG. 17 is an enlarged view of the input terminal 93 of the input connector portion 91 and the output terminal 94 of the output connector portion 92. It is sectional drawing. In FIG. 14, the output terminal 93 is omitted in order to prevent the drawing from being complicated.

  The input connector portion 91 includes a plurality of input terminals 93 and an input connector housing 95 that accommodates the plurality of input terminals 93. The input connector 91 is realized by a male connector. The input connector housing 95 is formed of a hard resin. The resin is, for example, polycarbonate. By forming the input connector housing 95 with a hard resin, durability is improved and the service life of the input connector portion 91 is improved. The input terminal 93 is provided in a connector hole 96 formed in the input connector housing 95 and is formed by retracting a predetermined distance from a connector end surface 97 that contacts the output connector portion 91. As a result, the input terminal 93 is prevented from being bent due to contact with another object. A plurality of input terminals 91 are provided at equal intervals in the width direction of the input connector portion 91, that is, the left-right direction in FIG. 11 and the thickness direction of the input connector portion 91, that is, the direction perpendicular to the paper surface of FIG. At both ends in the width direction of the input connector portion 91 and at the end portion connected to the output connector portion 92, the input connector housing 92 is formed with a connector protruding portion 98. Each input terminal 93 is electrically connected to the wiring of the harness 30.

  The output connector portion 92 includes a plurality of output terminals 94 and an output connector housing 101 that accommodates and holds a part of the plurality of output terminals 94. The plurality of output terminals 94 include the drive current output terminal 24A and the identification information output terminal 24B. The output connector portion 92 is realized by a female connector. In the width direction of the output connector portion 92, that is, in the left and right ends in FIG. A connector locking portion 102 is formed. With the input connector portion 91 and the output connector portion 92 being connected, the connector protrusion portion 98 is locked by the connector locking portion 102 as shown in FIG. Undesirable separation is prevented.

  In the connection state in which the input connector portion 91 and the output connector portion 92 are connected, the input terminal 93 of the input connector portion 91 and the output terminal 94 of the output connector portion 92 are connected to each other as shown in FIG. Makes point contact. For example, in a configuration in which one terminal is sandwiched by a spring with the other terminal, there is a risk that the spring will deteriorate and the contact state will change if the attachment and detachment are repeated. When the terminal 94 is brought into point contact, there is no possibility that the connection state changes. Therefore, the connection reliability is improved, and the test reliability can be further improved.

  When the input connector housing 95 of the input connector portion 91 is formed of a transparent resin such as polycarbonate, the input terminal 93 and the output terminal 94 are connected even when the input connector portion 91 and the output connector portion 92 are connected. The contact state of can be visually observed. In the present invention, when detecting the state of the semiconductor laser device 11 accommodated in all the thermostats 12, the input connector 91 and the output connector 92 corresponding to each thermostat 12 are sequentially attached, It is also necessary to leave. Even if the attachment and detachment is repeated frequently in this way, the connection portion is brought into point contact, so that the connection state is prevented from changing.

  For the output connector portion 92 described above, for example, a general-purpose female connector can be used. In this embodiment, as the output connector portion 92, for example, a 50-pin connector of model XG4E-5031 manufactured by OMRON Corporation is used.

  In the burn-in device 10 described above, one state acquisition unit 16 is detachably connected to the state detection unit 14 corresponding to each thermostat 12 in order to acquire a predetermined signal. When such a test method is performed, it is not necessary to provide a cable for connecting each state detection unit 14 and the state income unit 16 and a switching circuit for selectively extracting a predetermined signal from the plurality of cables. Therefore, the configuration of the apparatus can be simplified and the manufacturing cost can be reduced.

  As described above, in the burn-in device 10, the semiconductor laser element 11 is accommodated in the first accommodating space 21 of each of the plurality of thermostatic chambers 12, and the atmosphere of the first accommodating space 21 is maintained at a temperature within a predetermined temperature range. Thus, the state detector 14 outputs a predetermined signal indicating the state of the semiconductor laser element 11 to be driven. By obtaining the predetermined signal, the operating state of the semiconductor laser element 11 under a predetermined test condition can be known, and thereby an initial failure of the semiconductor laser element 11 can be detected.

  Each thermostat 12 accommodates one or more semiconductor laser elements 11. That is, in the burn-in apparatus 10, the semiconductor laser element 11 is accommodated by dividing the plurality of thermostatic chambers 12. The predetermined first storage space 12 is selected to be smaller than the predetermined storage space in a conventional thermostatic chamber. By reducing the predetermined accommodation space, the temperature holding unit 13 can have a simple configuration as compared with the conventional technique, and the manufacturing cost can be reduced.

  Moreover, since the temperature holding part 13 is provided in each of the plurality of thermostats 12, the semiconductor laser elements 11 having different test conditions can be accommodated and tested for each thermostat 12, and a plurality of semiconductors having different test conditions can be accommodated. When testing the laser element 11, the efficiency of the test can be improved.

  Further, the output unit 24 outputs identification information corresponding to each thermostat 12 held by the identification information holding unit 15. The output unit 24 is provided corresponding to the state detection unit 14. By acquiring the identification information, even if there are a plurality of thermostats 12, the predetermined signal output by the status detection unit 14 represents the status of the semiconductor laser element 11 accommodated in which thermostat 12. Can be easily identified. This facilitates management of signals representing the state of the semiconductor laser element 11 to be tested, and improves the efficiency of the test.

  The thermostatic chamber body 31 is provided with a thermostatic chamber lid body 32. By moving the thermostatic chamber body 31 and the thermostatic chamber lid body 32 relative to each other, the first storage space 21 is made a space outside the thermostatic chamber 12. It can be opened or closed from the space outside the thermostat 12. When the first storage space 21 is closed from the space outside the thermostat 12 by the thermostat body 31 and the thermostat lid 32, the light emitting part of the semiconductor laser element 11 and the light receiving part of the light receiving element 23A are brought close to each other. Thereby, the accuracy of the signal representing the state of the semiconductor laser element 11 can be increased. Further, the constant temperature chamber lid body 31 and the constant temperature chamber main body 32 are relatively moved to expose the first accommodation space 21 to the external space, whereby the conductor laser element 11 and the light receiving element 23A are relatively separated from each other. be able to. By opening the first accommodation space 21 to a space outside the thermostatic chamber 12, the semiconductor laser element 11 and the light receiving element 23A can be easily arranged in the first accommodation space 21. For example, when a failure occurs in the light receiving element 23A, the light receiving element 23A can be detached, and replacement and repair are facilitated. Moreover, since the semiconductor laser element 11 can be easily replaced, the test efficiency is improved.

  The identification information holding unit 15 outputs the identification information by applying a predetermined voltage to the drive current output terminal 24A of the output unit 24. By representing the identification information by a predetermined voltage, the number of signal lines connected to the identification information holding unit 15 for obtaining the identification information can be reduced as much as possible. This is because in the case where the identification information is represented by voltage, for example, only two signal lines are required. This simplifies the device and reduces manufacturing costs.

  The temperature holding unit 13 supplies heated air to the predetermined accommodation space 21 of the thermostatic chamber 21 through the first ventilation hole 57, and the first accommodation space in the thermostatic chamber 12 through the second ventilation hole 58. By discharging the air 21 to the external space, the atmosphere of the first accommodation space 21 is maintained at a temperature within a predetermined temperature range. When the atmosphere of the first storage space 21 is to be set to a temperature within a predetermined temperature range, for example, when the heating unit 51 that heats the air is disposed in the first storage space 21, the temperature of the atmosphere becomes closer to the heating unit 51. Since the temperature of the atmosphere decreases as the distance from the heating unit 51 increases, the temperature of the atmosphere in the first accommodation space 21 can be uneven, and the entire first accommodation space 21 is maintained at a temperature within a predetermined temperature range. Although it may be difficult, by supplying the air heated from the external space of the thermostat 12 to the 1st accommodation space 21 through the 1st ventilation hole 57, the temperature of the atmosphere of the 1st accommodation space 21 whole is set. The temperature can be increased while suppressing the uneven temperature as much as possible. Further, by discharging the air in the first accommodation space 21 to the external space via the second ventilation hole 58, it is possible to prevent the atmosphere in the first accommodation space 21 from rising excessively. Therefore, it is easy to keep the temperature of the first storage space 21 at a temperature within a predetermined temperature range.

  Further, the air in the second housing space 54 is heated by the heating unit 54, and the air in the second housing space 54 is supplied to the first housing space 21 through the first vent hole 57 by the air blowing unit 52 blowing air. it can. In addition, the air in the first accommodation space 21 can be discharged to the second accommodation space by sucking the air in the first accommodation space 21 to the second accommodation space 54 through the second vent hole 58 by the blower 52. it can. By setting it as such a structure, the air of the 1st accommodating space 21 and the 2nd accommodating space 54 can be circulated, and the temperature of the atmosphere of the 1st accommodating space 21 can be adjusted. When the temperature of the atmosphere of the first housing space 21 is lower than the temperature in the predetermined temperature range, the air heated by the heating unit 54 may be supplied to the first housing space 21 by the air blowing unit 52, When the temperature of the atmosphere of the first housing space 21 is higher than the temperature in the predetermined temperature range, heating of the air in the second housing space 54 by the heating unit 54 is stopped and / or by the blower unit 52. What is necessary is just to stop ventilation and suction.

  In the first direction B1, air is supplied from the one end portion 103 of the thermostatic bath 12 to the first accommodating space 21, and the air in the first accommodating space 21 can be discharged from the other end portion 104 of the thermostatic bath 12. It is possible to suppress as much as possible that air stays in the first storage space 21, and it is possible to suppress occurrence of temperature unevenness in the first storage space 21.

The burn-in apparatus 10 of the present embodiment is applied to an aging test of the semiconductor laser element 11, but is not limited to the semiconductor laser element 11, for example, a light emitting diode and an IC (
(Integrated Circuit) It may be applied to an aging test such as a chip.

In another embodiment of the present invention, the aging test of the semiconductor laser device 11 is performed by evaluating a change in optical output when the driving current of the semiconductor laser device 11 is kept constant in a predetermined temperature environment. It may be done. Such trials are called ACC (
Automatic Power Control) test. In this case, the drive unit 22 is connected to the semiconductor laser element 11.
Information corresponding to the amount of light detected by the light receiving means 23 is given to the output unit 24.

  FIG. 18 is a diagram showing an electrical configuration of the temperature control unit 56 and the temperature holding control unit 112 of the burn-in device 110 according to another embodiment of the present invention. The burn-in device 110 is configured to include a temperature holding control unit 112 in addition to the configuration of the burn-in device 10 of the above-described embodiment, and the other configuration is the same as that of the burn-in device 10, and thus redundant description is omitted. . The first to nth temperature control units 56a1 to 56an included in the first to first temperature holding units 13a1 to 13an are collectively referred to as a temperature control unit 56, respectively. The temperature holding control unit 112 is a temperature holding control unit.

  The temperature holding control unit 112 includes a temperature holding control unit main body 113 and a DC stabilized power source 114. The other end of the first power connection resistor R20 of each temperature control unit 56 described above is connected to the DC stabilized power supply 114 via the power connection connector 115. The first to nth power connection connectors 115a1 to 115an respectively corresponding to the first to nth temperature holding portions 13a1 to 13an are collectively referred to as a power connection connector 115.

  The first power connection resistor R20 is connected to the plus (+) terminal of the DC stabilized power supply 114 via the power connection connector 115. The minus (−) terminal of the DC stabilized power supply 114 is grounded via each power supply connector 115.

  The temperature holding control unit 112 activates or disables the DC stabilized power supply 114. The temperature holding control unit 112 is realized by, for example, a personal computer, and controls the DC stabilized power supply 114 based on a program stored therein. When the DC stabilized power supply 114 is activated, a DC voltage is applied to each temperature holding unit 113 via the power supply connector 121 so that the temperature holding unit 13 can function. Further, when the DC stabilized power supply 114 is disabled, the DC voltage is not applied to each temperature holding unit 113 via the power connector 121, so that the function of the temperature holding unit 13 can be stopped.

  Specifically, when the stabilized DC power supply 114 is activated, that is, when the stabilized DC power supply 114 outputs a predetermined voltage, the thermistor TH, the first resistor R1, and the first variable are output from the output terminal of the first comparator IC1. Depending on the voltage divided by the resistor VR1 or the thermistor TH, the second resistor R2, and the second variable resistor VR2, the output voltage of the constant voltage circuit input to the positive input terminal of the second comparator IC2 in the next stage In comparison, a high (H) level or low (L) level voltage is output. Further, if the DC stabilized power supply 114 is disabled, that is, if the DC stabilized power supply 114 does not output a predetermined voltage, the output terminal of the first comparator IC1 is not connected to the negative input terminal of the first comparator IC1. Compared with the output voltage of the constant voltage circuit connected to the positive input terminal of the second comparator IC2 at the next stage, an L level voltage is always output.

  Thus, by providing the temperature holding control unit 112, the functions of the temperature holding units 13 can be stopped all at once, and the temperature holding units 13 whose functions are stopped can be simultaneously operated. Thereby, the temperature of the atmosphere of the predetermined internal space 21 of all the thermostats 12 can be raised all at once, or can be lowered all at once, for example. That is, the start time and end time of the test in each temperature holding unit 13 can be made uniform, the test conditions of the semiconductor laser elements 11 accommodated in different thermostats 12 can be made uniform, and the test reliability can be further improved. Can do.

  In still another embodiment of the present invention, a wind direction changing unit 150 may be included in addition to the configuration of the burn-in device 10 described above. The burn-in apparatus of the present embodiment has a thermostatic chamber unit 151 instead of the thermostatic chamber unit 100 of the burn-in apparatus 10 of the above-described embodiment. Since the thermostatic chamber 150 has a configuration in which the wind direction changing unit 150 is added to the thermostatic chamber unit 100 in the above-described embodiment, the same parts are denoted by the same reference numerals and the description thereof is omitted. The wind direction changing unit 150 is a wind direction changing unit.

  FIG. 19 is a front view of the thermostatic chamber unit 151 in which the wind direction changing unit 150 is provided. Here, a state in which the predetermined first accommodating space 21 is opened to a space outside the thermostatic bath 12 is shown. FIG. 20 is a cross-sectional view taken along the cutting plane line XX-XX in the state where the first accommodation space 21 is closed from the space outside the thermostatic bath 12 in FIG. 19. FIG. 21 is an enlarged perspective view showing the wind direction changing unit 150. Here, the thermostatic bath lid 32, the light receiving means 23, and the thermostatic bath lid side mounting portion 39 are omitted in order to prevent the drawing from becoming complicated. It shows. In FIG. 19, the position at which the wind direction changing unit 150 is arranged in the closed state is indicated by a virtual line. Further, in FIG. 20, the thermostat main body side mounting portion 37, the socket 47, and the heat radiating plate 48 are shown in a simplified manner in order to prevent the drawing from becoming complicated. Hereinafter, in this Embodiment, the case where the thermostat unit 151 is a closed state is demonstrated.

  In the closed state, the wind direction changing unit 150 is one side in the first direction B1 of the semiconductor laser element 11 closest to the first vent hole 57 among the plurality of semiconductor laser elements 11 held by the thermostat body side mounting part 37. In addition, the semiconductor laser is disposed at a predetermined interval T3 from the semiconductor laser element 11 and is disposed closer to the first vent hole 57 by changing the flow of air supplied through the first vent hole 57. The wind abutting on the element 11 is reduced. By disposing the predetermined distance T3, a predetermined amount of wind can be brought into contact with the semiconductor laser elements 11 disposed near the first vent hole 57, and wind is applied to these semiconductor laser elements 11. It is prevented that it won't hit at all.

  The plurality of semiconductor laser elements 11 are held side by side along the first direction B1, but the air moves from the first vent hole 57 toward the second vent hole 58, that is, along the first direction B1. Therefore, the direction of the wind generated by the movement of air is the direction from one side of the first direction B1 to the other side. Therefore, the semiconductor laser element 11 disposed closer to one side in the first direction B1, particularly the semiconductor laser element 11A disposed closest to the other side in the first direction B1, and the other of the semiconductor laser elements in the first direction B1 are adjacent to each other. Although the semiconductor laser element 11B is likely to be in contact with wind, a semiconductor that self-heats by supplying current during a test by changing the flow of air supplied from the first vent hole 57 by the wind direction changing unit 150. It is possible to prevent the laser element 11 from being excessively cooled by wind due to the supply of air from the first vent hole 57. As a result, the inspection conditions of the semiconductor laser element 11 on the upstream side and the downstream side in the air flow direction can be made as uniform as possible, and the reliability of the test can be further improved.

  The wind direction changing unit 150 is provided in the thermostatic chamber lid 32 and is erected in the first processing space 21 from an inner peripheral surface facing the first processing space 21 of the thermostatic chamber lid 32. Accordingly, when the constant temperature bath 12 is opened and the semiconductor laser element 11 is replaced, it can be separated from the semiconductor laser element 11, so that it does not get in the way. In addition, by providing the wind direction changing unit 150 in the thermostatic chamber lid 32, it is possible to reduce the wind coming into contact with the semiconductor laser element 11 disposed near the first ventilation hole 57 and to arrange the wind direction changing unit 150 in the thermostatic chamber lid. Wind that contacts the light receiving element 23 </ b> A disposed closer to the first vent hole 57 in the light receiving element 23 </ b> A can be suppressed.

  The wind direction changing unit 150 is formed to have a tapered shape as it moves away from the semiconductor laser element 11 held in the thermostatic chamber main body side mounting unit 37 in the first direction B1. Specifically, in the closed state, the wind direction changing unit 150 includes a first inclined surface portion 151 and a second inclined surface portion 152. The first inclined surface portion 151 and the second inclined surface portion 152 are continuous in one direction in the first direction B1. The first inclined surface 151A of the first inclined surface portion 151 and the second inclined surface 152A of the second inclined surface portion 152 pass through the center of the semiconductor laser element 11 disposed along the first direction B1, and the first direction B1 and the second inclined surface 152A. It is formed symmetrically with respect to a virtual plane parallel to the two directions B2.

  In the present embodiment, the first inclined surface 151A and the second inclined surface 152 are substantially rectangular planes. The other end portion 153 of the first inclined surface portion 151 in the first direction B1 is disposed closer to the other side of the second direction B2 than the semiconductor laser element 11, and the other end portion 154 of the second inclined surface portion 152 in the first direction B2 is The semiconductor laser element 11 is disposed closer to one side in the second direction than the semiconductor laser element 11. In addition, the dimension T13 in the third direction B3 of the first inclined surface 151A and the second inclined surface 152A is selected to be larger than the dimensions in the third direction B3 including the semiconductor laser element 11, the radiator plate 48, and the socket 47, The tip portion 155 in the third direction B3 of the wind direction changing portion 150 erected from the thermostatic chamber lid 32 faces the thermostatic chamber main body side mounting portion 37 in the closed state. A part of the wind directed from one side of the first direction B1 toward the semiconductor laser device 11 held in the thermostatic chamber main body mounting portion 37 is the first inclined surface 151A or FIG. 21 as indicated by an arrow D1 in FIG. As indicated by an arrow D2, the semiconductor laser element 11 flows along the second inclined surface 152A toward one side and the other side in the second direction B2 of the semiconductor laser element 11, and thereby the semiconductor laser element 11 near the first vent hole 57. It is possible to prevent the wind from coming into contact only with. An angle θ1 formed by the first inclined surface 151A and the second inclined surface 152A is selected from 90 degrees (°) to 150 degrees (°), for example.

  By providing the wind direction changing unit 150, it is possible that the wind direction changing unit 150 disturbs the flow of wind from one side of the first direction B <b> 1 toward the semiconductor laser element 11 held in the thermostat body side mounting unit 37. The air flow can be smoothly changed by the wind direction changing unit 150. As a result, the air supplied from the first vent hole 57 is prevented from staying in the first processing space 21, and the occurrence of temperature unevenness in the first processing space 21 is reduced as much as possible. Therefore, the uniformity of the inspection conditions of the semiconductor laser element 11 can be improved, and the reliability of the test can be further improved.

  One end portion 160 of the wind direction changing portion 150 in the first direction B1 is disposed so as to face the first vent hole 57.

  FIG. 22 is a front view of a thermostatic chamber unit 200 in a burn-in apparatus according to still another embodiment of the present invention. Here, a state in which the predetermined first accommodating space 221 is opened to a space outside the thermostatic bath 12 is shown. The burn-in apparatus of the present embodiment has the same configuration as the burn-in apparatus 10 of the above-described embodiment, and the burn-in apparatus 10 is formed only in the configuration of the thermostat unit 200, specifically, in the thermostat bath 212. Since only the positions where the first ventilation holes 257 and the second ventilation holes 258 are predetermined and the configuration of the temperature holding unit 213 are different, the same configurations are denoted by the same reference numerals, and the description thereof may be omitted. is there. FIG. 23 is a cross-sectional view of the thermostatic chamber unit 200 as viewed from the cutting plane line XXIII-XXIII of FIG. It is sectional drawing of the thermostat unit 200 which shows. FIG. 25 is a cross-sectional view of the thermostatic chamber unit 200 as viewed from the cutting plane line XXV-XXV in FIG. FIG. 26 is a cross-sectional view of the thermostatic chamber unit as viewed from the cutting plane line XXVI-XXVI in FIG. 25. In FIG. 26, the flow of wind is indicated by arrows in the drawing.

  The constant temperature bath 212 in the burn-in apparatus of the present embodiment includes a constant temperature bath main body 231 and a constant temperature bath lid 32 and has a predetermined first storage space 221 in which the semiconductor laser element 11 can be stored. Hereinafter, the predetermined first accommodation space 221 is simply referred to as a first accommodation space 221. The thermostatic bath lid 31 is provided in the thermostatic bath main body 232. The thermostatic bath lid 32 is provided in the thermostatic bath main body 231 so that the first housing space 221 can be opened to a space outside the thermostatic bath 212 and the first housing space 221 can be closed from the space outside the thermostatic bath 212. . The state where the first storage space 221 is opened to the space outside the thermostat 212 is referred to as an open state, and the state where the first storage space 221 is closed from the external space of the thermostat 212 is referred to as a closed state. The constant temperature bath 212 is formed of a metal material such as stainless steel and iron.

  The thermostat main body 231 has a substantially bottomed cylindrical inner peripheral surface. The opening 233 of the thermostatic chamber body 231 is formed in a substantially rectangular shape. The thermostatic bath lid 32 has a rectangular plate shape, and the surface facing the first processing space 21 in the closed state is formed in a substantially flat surface. One end portion 234 of the thermostatic bath lid 232 is connected to one end portion 236A in the second direction B of the opening 233 of the thermostatic bath main body 231 by the hinge portion 35. The thermostatic chamber lid 32 can be angularly displaced about the axis L1 of the hinge portion 35, and in the closed state, contacts the opening 233 to close the opening. When the thermostatic chamber lid 32 is angularly displaced around the axis L1 in the direction of arrow C shown in FIG. 23 from the closed state, the inner peripheral surface of the thermostatic chamber body 231 is exposed. The first storage space 221 of the thermostat 212 is a region that is substantially rectangular parallelepiped in the closed state and is surrounded by the inner peripheral surface of the thermostat 212.

  The temperature between the inner peripheral surfaces of the thermostat 212 in the first direction B1 parallel to the direction in which the axis L1 extends is W11, and the thermostat 212 along the second direction B2 perpendicular to the first direction B1. If the dimension between the inner peripheral surfaces of the thermostat bath 12 in the direction along the third direction B3 perpendicular to the first direction B1 and the second direction B2 is W12, the W11 is 200 W12 is selected from 100 millimeters (mm) to 300 millimeters (mm), and W13 is selected from 25 millimeters (mm) to 80 millimeters (mm). In the present embodiment, for example, W11 = 350 mm, W12 = 170 mm, and W13 = 50 mm are selected.

  The constant temperature bath 212 accommodates the plurality of semiconductor laser elements 11 in the first accommodation space 221. The thermostat main body 231 has a thermostat main body side mounting portion 37 for detachably mounting the plurality of semiconductor laser elements 11. The thermostat body side mounting portion 37 is fixed to the thermostat body 231. The plurality of semiconductor laser elements 11 are detachably mounted on the thermostat body side mounting portion 37 of the thermostat body 231. The thermostat main body side mounting portion 37 includes a socket 47. The semiconductor laser element 11 is detachably attached to the socket 47. The semiconductor laser element 11 accommodated in the first accommodating space 221 is provided with a heat radiating plate 48.

  The thermostat body side mounting part 37 holds the plurality of semiconductor laser devices 11 from the region near the one end in the first direction B1 to the region near the other end of the thermostat main body 231 and at the center in the second direction B2. To do. The semiconductor laser elements 11 are held by the thermostat body side mounting portion 37 as a holding means in a state of being arranged in a line along the first direction B1. About 10 to 100 semiconductor laser elements 11 are accommodated in the first accommodating space 221, and in this embodiment, 20 semiconductor laser elements 11 are accommodated. The thermostat body side mounting part 237 holds the semiconductor laser element 11 so that the light emitting part faces outward from the opening of the thermostat body 31. The heat radiating plate 48 is provided in each semiconductor laser element 11 so that the thickness direction thereof is parallel to the third direction B3 on both sides of the semiconductor laser element 11 in the second direction B2.

  The thermostatic bath lid 32 has a thermostatic bath lid mounting portion 39 for detachably mounting a plurality of light receiving elements 23A. The plurality of light receiving elements 23 </ b> A of the light receiving means 23 are detachably mounted on the thermostatic chamber lid 32 by the thermostatic chamber lid mounting portion 39. The thermostatic chamber lid side mounting portion 39 is detachably fixed to the thermostatic chamber lid 32 by, for example, a screw member in a state slightly spaced from the thermostatic chamber lid 32. The plurality of light receiving elements 23 </ b> A of the light receiving means 23 face the semiconductor laser device 11 held in the thermostatic chamber body side mounting portion 37 in the closed state. In the closed state, the light receiving portions of the plurality of light receiving elements 23A and the light emitting portions of the plurality of semiconductor laser devices 11 face each other with a slight gap T11. The gap T11 is selected, for example, from 0.2 millimeters (mm) to 3 millimeters (mm). When the gap T11 is less than 0.2 mm, the semiconductor laser element 11 generates heat by passing a current through the semiconductor laser element 11 between the semiconductor laser element 11 and the light emitting element 23A during the test. The element 23A is heated, and accurate measurement becomes difficult. If the gap T13 is 3 mm or more, the light from the semiconductor laser element 11 spreads, so that it is difficult to efficiently receive the light from the semiconductor laser element 11. By setting the gap T11 to be not less than 0.2 mm and not more than 3 mm, the light receiving element 23A suppresses the influence of heat generated by the semiconductor laser element 11 as much as possible, and the light from the semiconductor laser element 11 is as efficient as possible. Can receive light.

  The occupation ratio of the semiconductor device to be accommodated with respect to the volume of the first accommodation space 221, that is, the semiconductor laser device 11 is 0.02% or more and 0.1% of the volume of the first accommodation space 221, as in the above-described embodiment. Chosen to be less than. As a result, the same effects as those of the burn-in apparatus according to the above-described embodiment can be obtained.

  The other end 223B in the second direction B2 of the opening 233 of the thermostatic chamber body 231 is provided with a lid detection unit 41 that detects whether it is in a closed state or an open state. The lid detection unit 41 is realized by, for example, a push button switch. In the closed state, when the operation piece 41A of the push button switch is pressed by the free end portion 42 of the thermostatic chamber lid 32, the contact of the push button switch is closed. In the open state, the constant temperature chamber lid 32 is angularly displaced, so that the load applied to the operation piece 41A of the push button switch is eliminated, and the contact of the push button switch is opened. The state detection unit 41 is connected to the drive unit 22. The drive unit 22 determines whether the contact is closed or open by, for example, passing a direct current through the contact. If the contact is closed, the drive unit 22 drives the semiconductor laser element 11 or opens the contact. If so, the driving of the semiconductor laser element 11 is stopped.

  An engaging portion 43 is formed at the free end portion 42 of the thermostatic bath lid 32. In addition, the thermostat main body 231 is provided with a locking portion 44 that engages with the engaging portion 43 and locks the thermostatic bath lid 32 in a closed state. In the closed state, the constant temperature bath body 231 and the constant temperature bath lid 32 can be brought into close contact with each other by engaging and locking the engaging portion 43 with the locking portion 44. This prevents air in the first accommodation space 221 from leaking from between the thermostat body 31 and the thermostat lid body 32 into the space outside the thermostat 212 and improves airtightness. . Further, the engaging portion 43 and the engaging portion 44 prevent the thermostatic bath lid body 32 from being undesirably angularly displaced. For example, during the aging test of the semiconductor laser element 11, the first accommodating space 21 is kept in the thermostatic bath. Opening to a space outside 212 is prevented.

  The thermostat 212 is provided with a temperature holding unit 213. The temperature holding unit 213 holds the heating unit 251, the air blowing unit 252, the heating unit 251, and a part of the air blowing unit 252, and a temperature holding unit housing 255 having a predetermined second accommodating space 254, The temperature control part 56 which controls the heating part 251 and the ventilation part 252 is included. The temperature holding unit housing 255 is a temperature adjusting space forming body, and is provided at one end of the constant temperature bath 212 in the third direction B3. The air blower 252 is a gas circulation means. The predetermined second accommodation space 254 is a temperature adjustment space. Hereinafter, the predetermined second storage space 254 may be simply referred to as the second storage space 254.

  First and second ventilation holes 257 and 258 are formed in the thermostatic chamber body 232 facing the first accommodation space 221. The first and second vent holes 257 and 258 penetrate the thermostat body 232 in the third direction B3 at the respective end portions 205 and 206 in the second direction B2. The first and second vent holes 257 and 258 are formed between both end portions 203 and 204 in the first direction B1 of the thermostatic bath body 232, and are formed in a long hole shape. The first vent hole 257 is formed near the one end portion 205 in the second direction B, and the second vent hole 258 is formed near the other end portion 206 in the second direction B. In the state where the thermostat unit 200 is installed on the shelf 17, the second direction B <b> 2 corresponds to the vertical direction, one of the second directions corresponds to the lower side, and the other in the second direction corresponds to the upper side.

  The first and second vent holes 257 and 258 are formed outside the semiconductor laser element 11 held by the thermostat body side mounting portion 37 in the second direction B2. The first and second ventilation holes 257 and 258 communicate with the second accommodation space 254 of the temperature holding unit housing 255. The first and second vent holes 257 and 258 are formed substantially symmetrically and symmetrically with respect to a virtual plane that is perpendicular to the second direction B2. The inner diameter W15 in the first direction B1 of the portion facing the first vent hole 257 and the inner diameter W16 in the first direction B1 of the portion facing the second vent hole 257 are set by the thermostat body side mounting portion 37. The plurality of semiconductor laser elements 11 to be held is selected to be larger than the width W14 in the second direction B2. The first and second vent holes 257 and 258 are provided with a semiconductor laser element 211A held at one end in the first direction B1 among the plurality of semiconductor laser elements 11 held by the constant temperature bath body side mounting portion 37. The semiconductor laser element 211B that extends to one side in the first direction B1 from the position and is held at the other end in the first direction B1 among the plurality of semiconductor laser elements 11 that are held by the thermostat body side mounting portion 37. It extends to the other side of the first direction B1 from the position where it is arranged. The inner peripheral surfaces that face the first and second vent holes 257 and 258 from one and the other in the first direction B1 are formed by curved surfaces that protrude outwardly, whereby the first and second vent holes 257 and 258 are formed. It is possible to prevent stagnation of air passing therethrough. Moreover, the inner peripheral surface which faces the said 1st and 2nd ventilation hole 257,258 from one side and the other of 2nd direction B2 is formed of a plane.

  In the first direction B1, the end face of the semiconductor laser element 11A held at one end of the first direction B1 among the plurality of semiconductor laser elements 11 held by the thermostat body side mounting portion 37, and the first and second vent holes A plurality of semiconductor laser elements 11 held by the thermostat body side mounting portion 37 in the first direction B1 with a distance W17 between the inner peripheral surfaces 157A and 157B facing 257 and 258 from one side in the first direction B1. Between the end face of the semiconductor laser element 11B held at the other end in the first direction B1 and the inner peripheral faces 157A and 157B facing the first and second vent holes 257 and 258 from the other side in the first direction B1. When the distance W18 is W18, W17 and W18 are selected to be larger than the dimension of the at least one semiconductor laser element 11 in the first direction B1.

  The heating unit 251 heats the atmosphere in the second storage space 254, that is, heats the air in the second storage space 254. The heating unit 251 is realized including, for example, a nichrome wire heater 251A, and heats the atmosphere by generating heat. In the present embodiment, a nichrome wire heater manufactured by Sakaguchi Electric Heat Co., model SN-041010, rated 100 V, 100 W can be used as the heating unit 151. The second storage space 254 is selected to have the same size as the volume of the first storage space 221. The nichrome wire heater 251A of the heating unit 251 extends along the first direction B1 and is disposed closer to the first vent hole 257 in the second direction B2.

  The air blower 252 is a gas circulating means, and includes rotation driving units 261a and 261b, impellers 262a and 262b, and flywheels 263a and 263b. When the rotation driving units 261a and 261b are collectively referred to, the rotation driving unit 261 is described. The impellers 262a and 262b are collectively referred to as an impeller 262. When the flywheels 263a and 263b are collectively referred to, the flywheels 263 are described. In this embodiment, a plurality of impellers 262 are provided.

  The rotation drive unit 261 is realized by a motor, for example. In the present embodiment, a rotary motor that is an AC motor is used as the rotation drive unit 261. The impeller 262 is fixed to the rotation shaft 264 of the rotation drive unit 261, and rotates in a predetermined direction around the rotation axis L3 of the rotation shaft 264 by driving the rotation drive unit 261. The rotating shaft 264 extends along the third direction B3. The impeller 262 can move air in a direction away from the rotation axis L3 by rotating around the rotation axis L3, in other words, can blow air. The flywheel 263 is fixed to the rotation shaft 264 of the rotation drive unit 261. The flywheel 263 is not disposed in the second accommodation space 254 but is disposed outside the temperature holding unit housing 255. The flywheel 263 is provided between the impeller 262 and the main body of the rotation drive unit 261 that rotates the rotation shaft 264. By providing the flywheel 263, it is possible to prevent a sudden change in the rotational speed of the rotation drive unit 261, whereby the air blow by the impeller 262 is stabilized. A rotation axis L2 of the rotation shaft 264 of the rotation drive unit 261 extends along the third direction B3. The impellers 262a and 263b are arranged side by side along the first direction B1. Part of the impeller 262 and the rotating shaft 264 is accommodated in the second accommodating space 54.

  Since the rotating shaft 264 of the impeller 262 extends in the third direction B3, the dimension in the third direction B3 of the thermostatic chamber unit 200, specifically the third direction of the temperature holding unit 213, according to the diameter of the impeller 262. There is no need to change the dimension of B3. Therefore, the size of the thermostat unit 200 in the third direction B3 can be made as small as possible, and the apparatus can be made small. Since the burn-in apparatus has a plurality of thermostatic chamber units 200, the entire apparatus can be reduced in size, and the degree of freedom of installation location is improved. In the third direction B <b> 3, the impeller 262 is provided in the thermostat 212 by being separated by a predetermined distance T <b> 12. The predetermined distance T12 is selected from 20 millimeters (mm) to 30 millimeters (mm), for example. The impeller 262 is disposed closer to the second vent hole 258 than the nichrome wire heater 51A in the second direction B2. Accordingly, when the impeller 262 is rotated about the axis, the air heated by the nichrome wire heater 51 </ b> A can be supplied to the first processing space 21 through the first vent hole 257.

  The temperature holding unit casing 255 is provided with wind direction control plates 265a and 265b. When the wind direction control plates 265a and 265b are collectively referred to, they are simply referred to as a wind direction control plate 265. The wind direction control plate 265 is provided corresponding to each impeller 262, and adjusts the air flow so that the air that moves as each impeller 262 rotates flows in a predetermined direction. The wind direction control plate 265 has an arc-shaped inner peripheral surface with the rotation axis L3 as the center. The wind direction control plate 265 is realized by a plate-like member, and is formed so that the inner circumferential surface covers substantially a half circumference of the impeller 262 outside the rotation axis L2 of the impeller 262 in the radial direction. The wind direction control plate 265 has an impeller from the opposite side of the second direction B2 to the side where the first air hole 257 is predetermined with the impeller 262 interposed therebetween so that air moves to the first air hole 257 side. 262 is covered. The wind direction control plate 265 covers the outer side of the rotation axis L3 in the first direction B1, and is provided with end portions 265A and 265B on the inner peripheral surface of the wind direction control plate 26.

  The nichrome wire heater 251 </ b> A of the heating unit 251 is provided in the second accommodation space 254 on the side opposite to the wind direction control plate 265 with the impeller 262 interposed therebetween. The nichrome wire heater 251 </ b> A has a portion extending in parallel with the first direction B <b> 1 across both ends of the temperature holding unit housing 255 in the first direction B <b> 1. Nichrome wire heater 251 </ b> A is fixed to temperature holding unit casing 255 by heater holding unit 280 at a predetermined interval from temperature holding unit casing 255.

  In addition, the temperature holding part housing 255 flows from the first air flow path forming part 266 for guiding the air moving by the rotation of the impeller 262 to the predetermined first air hole 257 and the second air hole 258. A second flow path forming part 267 for guiding air to the impeller 262 is provided. The first flow path forming portion 266 is closer to the thermostatic chamber 212 than the impeller 262, and in a region closer to the first through hole 257 than the rotation axis L2, the first air hole 257 determined in advance from the outer peripheral portion of the impeller 262. And is formed between.

  Further, the temperature holding unit 213 includes the first treatment hole 257 and the first ventilation hole 257 between the impeller 262 and the one end portion 205 in the second direction B2 of the thermostatic bath 212 in which the first ventilation hole 257 is formed. The partition plate 301 is divided into a plurality of predetermined spaces in the extending direction of the first direction B1, that is, in the first direction B1. The partition plate 301 extends from one end portion of the temperature holding unit housing 255 in the second direction B2, that is, the lower end portion, to a space closer to the impeller 262 than the nichrome wire heater 51A in the second direction B2. Accordingly, the nichrome wire heater 251A is arranged in a plurality of predetermined spaces partitioned by the partition plate 301, and can heat the air in the predetermined spaces.

  The partition plate 301 is a flat plate member, and the thickness direction thereof is provided in parallel with the first direction B1. The partition plate 301 is disposed at the center of the temperature holding unit housing 255 in the second direction B2, and has a center partition 302 formed between the wind direction control plates 256a and 256b. By providing the center partition plate 302, the wind generated by the rotation of each impeller 262 is prevented from interfering. Further, the partition plate 301 includes a plurality of adjustment partition plates 303 arranged between the center partition plate 302 and the inner peripheral surface facing the second processing space 354 of the temperature holding unit housing 255 in the first direction B1. . The adjustment partition plate 303 includes first to sixth adjustment partition plates 304 to 309.

  The first to third adjustment partition plates 304 to 306 are provided on one side in the first direction of the center partition plate 302 and are arranged in this order in a direction away from the center partition plate 302. In the first direction B1, the distance T21 between the mutually opposing surfaces of the center partition plate 302 and the first adjustment partition plate 304, and the first adjustment partition plate 304 and the second adjustment partition plate 305 face each other. The distance T22 between the surfaces and the distance T23 between the mutually facing surfaces of the second adjustment partition plate 305 and the third adjustment partition plate 306 heat the air in each space by the nichrome wire heater 51A, When the air heated in each space by 52 is supplied to the first processing space, the temperature of the air flowing out from the first vent hole 257 in the first direction B1 is selected to be substantially uniform.

  The fourth to sixth adjustment partition plates 307 to 309 are arranged in this order in the direction away from the center partition plate 302 on the other side in the first direction of the center partition plate 302. In the first direction B1, the distance T24 between the mutually facing surfaces of the center partition plate 302 and the fourth adjustment partition plate 307 and the fourth adjustment partition plate 307 and the fifth adjustment partition plate 308 are opposed to each other. The distance T25 between the surfaces to be heated and the distance T26 between the surfaces facing each other of the fifth adjustment partition plate 308 and the sixth adjustment partition plate 309 heat the air in each space by the nichrome wire heater 51A and blow the air. When the air heated in each space by the section 52 is supplied to the first processing space, the temperature of the air flowing out from the first vent hole 257 in the first direction B1 is selected to be substantially uniform.

  The air that moves as the impeller 262 rotates flows into the predetermined spaces partitioned by the partition plates 301. The air moving by the impeller 262 may not be uniform in the vicinity of the rotation axis L3 of the impeller 262 and in a region away from the rotation axis L3, or in the rotation direction upstream side and the rotation direction downstream side. This is a case where the moving air is not uniform as described above by adjusting the size of the predetermined space partitioned by the partition plate 301 and heating the air in each predetermined space by the nichrome wire heater 51A. However, the temperature of the air supplied from the predetermined spaces to the first processing space 221 can be made substantially uniform. By adjusting the volume of the predetermined space heated by the nichrome wire heater 51A, that is, by adjusting the above-described T21 to T26, the predetermined space formed in the region where the amount of air movement is large, The volume is made smaller than the predetermined space formed in. As a result, air can be sufficiently heated even in a region where the air flow is fast, so that the first accommodation from the first ventilation hole in the extending direction of the first ventilation hole 257, that is, the first direction B1. The uniformity of the temperature of the heated air supplied to the space 221 can be further improved. In the present embodiment, the first to sixth adjustment partition plates 304 to 309 are provided, but the number of adjustment partition plates is not limited to six.

  In addition, the temperature holding unit housing 255 receives the first flow path forming unit 266 for guiding the air that is moved by the rotation of the impeller 262 to the first vent hole 57 and the air flowing from the second vent hole 258. A second flow path forming portion 267 for guiding to the impeller 262 is provided. The first flow path forming portion 266 is formed by the partition plate 301 in a region closer to the thermostat 212 than the impeller 262 and closer to the first through hole 257 than the rotation axis L3 in the predetermined second direction B2. Each predetermined space is formed to communicate with the first vent hole 57. Air that moves as the impeller 62 rotates by the first flow path forming unit 266 is sent to one side in the second direction B2, as indicated by an arrow G1 in FIG. The air sent to one side in the first direction B1 passes through a predetermined space partitioned by the partition plate 301, and the arrow G2 in FIG. 24 from the end of the temperature holding unit housing 55 in the first direction B1. As shown in FIG. 4, the air is sent to the other side in the third direction B3, passes through the first vent hole 257, and flows into the first accommodation space 221. The air that has flowed into the first accommodation space 221 goes to the other side in the second direction B2, as indicated by an arrow G3 in FIG. Within the first accommodating space 221, the air sent to the other of the second direction B2 from the end in the second direction B2 of the thermostatic chamber 12 as shown by an arrow G4 in FIG. And flows through the second vent hole 258 and flows into the second accommodation space 254 by the suction force generated by the rotation of the impeller 62. The air that has flowed into the second storage space 54 is guided to the vicinity of the rotation axis L <b> 3 of the impeller 262 by the second flow path forming unit 267. The second flow path forming portion 267 is closer to the thermostatic chamber 12 than the impeller 262, and closer to the second through hole 258 than the first flow path forming portion 266, and near the rotation axis L3 of the impeller 262. 2 between the two vent holes 58. By rotating the impeller 62, the air in the first storage space 21 and the second storage space 54 can be circulated.

  The temperature holding unit housing 255 is provided with a protective member 264 that protects the rotation driving unit 261 that protrudes to one side of the temperature holding unit housing 255 in the third direction B3. The protection member 264 projects to one side of the temperature holding unit housing 255 in the third direction B3 and covers the rotation driving unit 61 from the outside around the rotation axis L2.

  As described above, in the burn-in apparatus of the present embodiment, the semiconductor laser elements 11 are arranged in a direction perpendicular to the air flow direction, thereby contacting each semiconductor laser element 11 held by the thermostatic chamber body side holding portion 37. Since the wind can be made as equal as possible, the inspection conditions of the semiconductor laser device 11 can be made as uniform as possible, and the reliability of the test can be improved.

  The first and second vent holes 257 and 258 are determined by the number of semiconductor laser elements 11 to be held and the size of the constant temperature bath 212. The larger the constant temperature bath 12, the more first and second predetermined temperatures are set. The ventilation holes 257 and 258 extend in the first direction B1. Even in such a case, by arranging and rotating a plurality of impellers 262 in the first direction B1, the first processing space 221 is supplied from the first vent hole 257 in the first direction B1. The amount of air discharged and the amount of air discharged from the first processing space 221 through the second ventilation hole 258 can be made as uniform as possible. As a result, the inspection conditions of the semiconductor laser element 11 in the direction in which the semiconductor laser elements 11 are arranged, that is, the first direction B1, can be aligned as much as possible, and the reliability of the test can be further improved.

  In each embodiment of the present invention, the thermostatic chamber body holding unit 37 holds the plurality of semiconductor laser elements 11 in a line in a predetermined direction, that is, the first direction B1, but the thermostatic chamber body holding unit 37 The semiconductor laser elements 11 may be held in a plurality of rows in the second direction B1. The thermostatic chamber main body holding portion 37 holds a plurality of rows of semiconductor laser elements 11 in the second direction B1, thereby increasing the number of semiconductor laser elements 11 that can be tested at one time. Efficiency can be improved.

  In still another embodiment of the present invention, the burn-in apparatus may be configured by combining the configurations of the above-described embodiments. In the above-described embodiment, the predetermined gas is air, but the predetermined gas may be any nonflammable gas other than air, and may be nitrogen gas, for example.

  The burn-in apparatus of the present invention can realize a burn-in apparatus with a simple configuration and improved test reliability as compared with the burn-in apparatus of the prior art. Therefore, it is possible to reduce the manufacturing cost of equipment such as production equipment and to detect an initial failure of a semiconductor device to be inspected with high precision as compared with a conventional burn-in equipment. .

It is a functional block diagram which shows the structure of the burn-in apparatus 10 of one Embodiment of this invention. 1 is a diagram schematically showing the appearance of a burn-in device 10. FIG. 1 is a configuration diagram showing a part of a burn-in device 10 in an enlarged manner. 2 is a front view of a thermostatic chamber unit 100. FIG. It is sectional drawing of the thermostat unit 100 seen from the cut surface line VV of FIG. It is sectional drawing of the thermostat unit 100 which shows the state which closed the 1st accommodating space 21 from the space outside the thermostat 12 in FIG. It is sectional drawing of the thermostat unit 100 seen from the cut surface line VII-VII of FIG. It is sectional drawing of the thermostat unit 100 seen from the cut surface line VIII-VIII of FIG. 3 is a diagram illustrating an electrical configuration of a temperature control unit 56. FIG. 3 is a circuit diagram showing a configuration of an identification information holding unit 15. FIG. 4 is a plan view showing an input connector part 91 of the input part 26 of the state acquisition part 16. FIG. 3 is a front view of an input connector portion 91. FIG. 4 is a side view of an input connector portion 91. FIG. It is a top view which shows the output connector part 92 of the output part 24 which outputs a predetermined signal and identification information. It is a top view which shows the output connector part 92. FIG. It is a top view which connects and shows the input connector part 91 and the output connector part 92. FIG. 4 is an enlarged sectional view showing an input terminal 93 of the input connector section 91 and an output terminal 94 of the output connector section 92. FIG. It is a figure which shows the electrical structure of the temperature control part 56 and the temperature maintenance control part 112 of the burn-in apparatus 110 of other form of implementation of this invention. FIG. 19 is a front view of the thermostatic chamber unit 151 in which the wind direction changing unit 150 is provided. FIG. 20 is a cross-sectional view as viewed from the cutting plane line XX-XX in a state where the first accommodation space 21 is closed from the space outside the thermostat 12 in FIG. 19.

It is a perspective view which expands and shows the wind direction change part 150. FIG. FIG. 22 is a front view of a thermostatic chamber unit 200 in a burn-in apparatus according to still another embodiment of the present invention. It is sectional drawing of the thermostat unit 200 seen from the cut surface line XXIII-XXIII of FIG. It is sectional drawing of the thermostat unit 200 which shows the closed state which closed the 1st accommodating space 21 from the space outside the thermostat 12 in FIG. It is sectional drawing of the thermostat unit 200 seen from the cut surface line XXV-XXV of FIG. FIG. 26 is a cross-sectional view of the thermostatic chamber unit as seen from a cutting plane line XXVI-XXVI in FIG. 25. It is a figure which shows the external appearance of the burn-in apparatus 1 of the 1st prior art. 2 is a functional block diagram showing the configuration of the burn-in device 1. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Burn-in apparatus 11 Semiconductor laser element 12 Constant temperature bath 13 Temperature holding part 14 State detection part 15 Identification information holding part 16 State acquisition part 21 Accommodating space 23 Light receiving means 24 Output part 26 Input part 31 Constant temperature tank main body 32 Constant temperature tank cover body

Claims (16)

A plurality of thermostatic chambers having a predetermined accommodation space capable of accommodating a semiconductor device;
A temperature holding means that is provided in each thermostat and holds the atmosphere of the predetermined storage space of the thermostat at a temperature within a predetermined temperature range;
A burn-in apparatus comprising: a state detection unit that is provided corresponding to each thermostat and drives a semiconductor device accommodated in each thermostat and outputs a predetermined signal indicating the state of the semiconductor device. .   2. The burn-in apparatus according to claim 1, wherein the occupation ratio of the semiconductor device accommodated with respect to the predetermined capacity of the accommodating space is selected to be 0.02% or more and less than 0.1% of the predetermined capacity of the accommodating space. Corresponding to each thermostat, identification information holding means for holding individual identification information of each thermostat,
3. The burn-in apparatus according to claim 1, further comprising identification information output means provided corresponding to the state detection means and outputting identification information given from the identification information holding means. The thermostat includes a thermostat body and a thermostat lid provided in the thermostat body so that a predetermined storage space can be opened to a space outside the thermostat and can be closed from the space outside the thermostat,
The semiconductor device is a light emitting element,
The state detection means includes a light receiving element that receives light emitted from the light emitting element,
The light emitting element is detachably attached to either the thermostat body or the thermostat lid, and the light receiving element is detachably attached to either the thermostat body or the thermostat lid, and the thermostat When the predetermined storage space is closed from the space outside the thermostatic chamber by the bath body and the thermostatic bath lid, the light emitting element and the light receiving element are close to each other, and the light emitting section and the light receiving section are arranged to face each other. The burn-in apparatus according to any one of claims 1 to 3.   3. The burn-in apparatus according to claim 2, wherein the identification information holding unit applies a predetermined voltage to the identification information output unit. A state acquisition unit that is detachably connected to the state detection unit and acquires a predetermined signal output from the state detection unit;
The state detection means has an output terminal for outputting a predetermined signal,
The state acquisition means has an input terminal interconnected with the output terminal of the state detection means,
The burn-in device according to any one of claims 1 to 5, wherein the output terminal and the input terminal are in point contact with the state acquisition unit detachably connected to the state detection unit. The thermostat is formed with a plurality of ventilation holes that communicate the predetermined storage space and the external space of the thermostat,
The temperature holding means is capable of supplying a predetermined gas heated to a predetermined accommodation space through a predetermined first ventilation hole among the plurality of ventilation holes, and a predetermined first ventilation hole among the plurality of ventilation holes. The burn-in device according to any one of claims 1 to 6, wherein a predetermined gas in a predetermined accommodation space can be discharged to an external space through a predetermined second vent hole different from the above. The temperature holding means is
A temperature adjustment space forming body that forms a predetermined temperature adjustment space connected to a predetermined storage space through the vent hole;
Heating means capable of heating a predetermined gas in a predetermined temperature adjustment space;
A predetermined gas in a predetermined temperature adjustment space is supplied to a predetermined storage space through a predetermined first ventilation hole by blowing air, and a predetermined gas in the predetermined storage space is predetermined through a second ventilation hole. The burn-in apparatus according to claim 7, further comprising a gas circulation means for discharging to the temperature adjustment space.   The predetermined first vent hole is formed in one end portion of the thermostatic bath in a predetermined direction, and the predetermined second vent hole is formed in the other end portion of the thermostatic bath in the predetermined direction. The burn-in device according to claim 7 or 8, characterized in that Holding means for holding a plurality of semiconductor devices side by side along a predetermined direction at a position closer to the other of the predetermined direction than the predetermined first air hole;
Among the plurality of semiconductor devices held by the holding means, the semiconductor device that is closest to the predetermined first vent hole is disposed on one side in the predetermined direction and is supplied via the predetermined first vent hole to hold the holding means in advance. 10. The burn-in apparatus according to claim 9, further comprising a wind direction changing means for changing a predetermined gas flow toward the semiconductor device held at one end in a predetermined direction.   11. The burn-in apparatus according to claim 10, wherein the wind direction changing means is formed to have a tapered shape as it moves away from the semiconductor device held by the holding means in the predetermined direction.   In the predetermined direction, perpendicular to the predetermined direction between one end portion of the thermostatic bath in which the predetermined first vent hole is formed and the other end portion of the thermostatic bath in which the predetermined second vent hole is formed. 10. The burn-in apparatus according to claim 9, further comprising holding means for holding a plurality of semiconductor devices side by side along a predetermined direction. The predetermined first vent hole and the predetermined second vent hole extend between one end and the other end of the thermostatic bath in a predetermined direction perpendicular to the predetermined direction,
The gas circulation means has a plurality of rotatable impellers,
The burn-in device according to claim 12, wherein the impellers are arranged side by side in a predetermined direction perpendicular to the predetermined direction. A partition plate that divides a temperature adjustment space into a plurality of predetermined spaces in a direction in which the predetermined first vent hole extends between the impeller and one end portion of the thermostatic chamber in which the predetermined first vent hole is formed. Have
The burn-in apparatus according to claim 13, wherein the heating means heats a predetermined gas in each predetermined space partitioned by the partition plate.   The temperature holding control means for stopping the functions of the temperature holding means all at once, or causing the temperature holding means whose functions are stopped to function at the same time, is included. Burn-in equipment. A test method for a semiconductor device using the burn-in device according to claim 1,
A test method for a semiconductor device, characterized in that one state acquisition means is detachably connected in order to state detection means corresponding to each thermostat and a predetermined signal is acquired.

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