JP2005109090A - Heat treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heat treatment apparatus which can emit the light of a suitable illumination distribution on the front surface of a substrate. <P>SOLUTION: The heat treatment apparatus for heating a disk-like substrate by illuminating with the light includes a light source having a plurality of flash lamps arrayed in a flat surface state along a horizontal surface, a holding means for holding the substrate in a horizontal attitude under the light source, and a deflecting means for deflecting the illumination light from the light source in the radial direction of the substrate held in the holding means. Since the heat treatment apparatus has a recess formed on the upper surface of a first transparent plate 61, the light illuminated from the above light source 5 can be guided down while deflecting the light outward by the first transparent plate 61. Therefore, a difference between the illumination near a center of the light reaching the front surface of a semiconductor wafer W and the illumination near the periphery can be reduced, and the light of the suitable illumination distribution can be illuminated to the front surface of the semiconductor wafer W. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a heat treatment apparatus for performing heat treatment of a substrate such as a semiconductor wafer or a glass substrate (hereinafter simply referred to as “substrate”) by irradiating light.

  Conventionally, in an ion activation process of a semiconductor wafer, the implanted wafer is activated by heating (annealing) the semiconductor wafer after ion implantation to a temperature of about 1000 to 1100 ° C., for example.

  A heat treatment apparatus such as a lamp annealing apparatus is used for heating the semiconductor wafer in the ion activation process. The lamp annealing device is a device that raises the temperature of a semiconductor wafer by applying energy of light emitted from a halogen lamp or the like to a semiconductor wafer placed on a substantially horizontal placement surface.

  In recent years, a flash lamp annealing apparatus using a xenon flash lamp or the like has been proposed as a heat treatment apparatus for heating a semiconductor wafer (see, for example, Patent Documents 1 and 2). Flash lamp annealing equipment irradiates a semiconductor wafer mounted on a substantially horizontal mounting surface with flash light from a xenon flash lamp or the like, so that only the surface of the semiconductor wafer is exposed for a very short time (several milliseconds or less). ).

  In a lamp annealing apparatus using a halogen lamp, the temperature rise rate of the semiconductor wafer is about several hundred degrees Celsius per second. Therefore, the implanted ions diffuse during heating. In the flash lamp annealing apparatus, ions diffuse. Since there is not enough time, ion activation can be performed without diffusing the implanted ions.

  As described above, in a heat treatment apparatus that heats a semiconductor wafer by irradiating light, a configuration is generally adopted in which light is irradiated from above on a semiconductor wafer held in a horizontal position. In order to make the illuminance distribution of the light irradiated to the surface of the semiconductor wafer uniform in the plane, a light source in which a plurality of rod-shaped or spherical lamps are arranged in a plane along a horizontal plane has been conventionally used. (For example, see Patent Documents 1, 2, and 3).

JP 59-169125 A JP 63-166219 A JP 2000-068222 A

  However, even when a light source in which a plurality of lamps are arranged in a plane along a horizontal plane is used, the illuminance distribution of light received from the light source can be strictly uniform as long as the number of the lamps is limited. Absent. That is, as shown in the graph of FIG. 15, the illuminance distribution in the horizontal plane below the light source tends to gradually decrease from the position immediately below the center of the light source toward the periphery.

  For this reason, it is necessary to reduce the difference between the vicinity of the center and the vicinity of the illuminance distribution created by such a plurality of lamps in order to heat the surface of the semiconductor wafer strictly uniformly in the plane. Was left.

This is a problem that occurs regardless of whether the plurality of lamps constituting the light source are halogen lamps or xenon flash lamps. However, in the case of a halogen lamp, the difference between the vicinity of the center of the illuminance distribution and the vicinity of the periphery can be reduced to some extent by taking any of the following measures 1) to 3).
Measure 1): Monitor the illuminance distribution of the light being irradiated and feedback control the output of each lamp based on the monitoring result.
Measure 2): A light diffusing plate is disposed between the semiconductor wafer and the light source, and the semiconductor wafer is irradiated with light diffused by the light diffusing plate.
Measure 3): Arrange lamps with relatively high output near the periphery of the light source.

However, when the plurality of lamps constituting the light source are xenon flash lamps, these measures 1) to 3) are unlikely to be effective measures. This is due to the following reasons 1) to 3).
Reason 1): In the case of a xenon flash lamp, since the lighting is instantaneous, it is difficult to perform feedback control as in measure 1).
Reason 2): Since the wavelength of the light emitted from the xenon flash lamp is relatively short, the loss of illuminance increases through the light diffusion plate as in measure 2).
Reason 3): Since the xenon flash lamp has a wide light-emitting surface and a wide range of illumination with a single lamp, it is difficult to adjust the local illuminance even by the measure 3).

  Therefore, when the plurality of lamps constituting the light source are flash lamps, it is particularly difficult to reduce the difference between the vicinity of the center of the illuminance distribution and the vicinity of the periphery.

  On the other hand, depending on the semiconductor wafer to be processed, the heat absorption efficiency may not be uniform in the plane due to the influence of an electronic circuit pattern or a thin film formed on the surface. In such a case, there is a case where the illuminance near the center is consciously desired to be higher than the vicinity.

  The present invention has been made in view of these problems, and an object of the present invention is to provide a heat treatment apparatus that can irradiate the surface of a substrate with light having an appropriate illuminance distribution.

  In order to solve the above-mentioned problem, the invention according to claim 1 is a heat treatment apparatus for heating a disk-shaped substrate by irradiating light, wherein a plurality of flash lamps are arranged in a plane along a horizontal plane. And holding means for holding the substrate in a horizontal position below the light source, and deflecting means for deflecting irradiation light from the light source in a radial direction of the substrate held by the holding means. And

  The invention according to claim 2 is the heat treatment apparatus according to claim 1, wherein the deflection unit is disposed in a horizontal posture between the light source and the substrate held by the holding unit, and from the light source In the effective portion that transmits the irradiation light, a translucent plate formed so that the vertical thickness near the center is relatively thinner than the vertical thickness near the periphery is included.

  The invention according to claim 3 is the heat treatment apparatus according to claim 2, wherein the translucent plate has a recess in the vicinity of the center of the upper surface of the effective portion.

  The invention according to claim 4 is the heat treatment apparatus according to claim 3, characterized in that the peripheral portion of the concave portion is an inclined surface that becomes thicker toward the outside.

  The invention according to claim 5 is the heat treatment apparatus according to claim 1, wherein the deflection unit is disposed in a horizontal posture between the light source and the substrate held by the holding unit, In the effective portion that transmits the irradiation light, a translucent plate formed so that the vertical thickness near the center is relatively larger than the vertical thickness near the periphery is included.

  The invention according to claim 6 is the heat treatment apparatus according to any one of claims 2 to 5, wherein the deflecting unit has a horizontal posture between the light source and the substrate held by the holding unit. The auxiliary light-transmitting plate is provided separately from the light-transmitting plate, and the auxiliary light-transmitting plate has a predetermined thickness distribution that varies in the radial direction of the substrate.

  The invention according to claim 7 is the heat treatment apparatus according to any one of claims 2 to 5, wherein the deflecting unit is positioned horizontally between the light source and the substrate held by the holding unit. The auxiliary light-transmitting plate is provided separately from the light-transmitting plate, and the auxiliary light-transmitting plate has a smaller area than the effective portion of the light-transmitting plate in plan view. And

  The invention according to claim 8 is the heat treatment apparatus according to claim 6 or claim 7, wherein the auxiliary translucent plate is operated between the light source and the substrate held by the holding means, It is further characterized by further comprising forward / backward drive means for moving between the retracted position and the operating position.

  The invention according to claim 9 is the heat treatment apparatus according to any one of claims 2 to 8, wherein the deflecting means further includes a lift driving means for lifting and lowering the translucent plate. To do.

  The invention according to claim 10 is a heat treatment apparatus for heating a substrate by irradiating light, wherein the light source has a plurality of lamps arranged in a plane along a horizontal plane, and the substrate is held below the light source. In an effective portion that is disposed in a horizontal posture between the holding means and the light source and the substrate held by the holding means and transmits the irradiation light from the light source, the thickness in the vertical direction around the center is around the periphery. A translucent plate formed so as to be relatively thinner than a thickness in a vertical direction, and an elevating drive means for elevating and lowering the translucent plate are provided.

  The invention according to claim 11 is a heat treatment apparatus for heating a substrate by irradiating light, wherein the light source has a plurality of lamps arranged in a plane along a horizontal plane, and the substrate is held below the light source. A holding means; a translucent plate disposed in a horizontal position between the light source and the substrate held by the holding means; and a predetermined thickness distribution that is disposed in a horizontal position and changes in a radial direction of the substrate. And an auxiliary translucent plate that moves the auxiliary translucent plate between an operating position between the light source and the substrate held by the holding unit and a position retracted from the operating position. And.

  The invention according to claim 12 is a heat treatment apparatus for heating a substrate by irradiating light, wherein the light source has a plurality of lamps arranged in a plane along a horizontal plane, and the substrate is held below the light source. Between the holding means, the light source and the substrate held by the holding means, a horizontal posture is provided, and a translucent plate that transmits the irradiation light from the light source in its effective portion, and a horizontal posture. The auxiliary light-transmitting plate having an area smaller than the effective portion of the light-transmitting plate in plan view, and the auxiliary light-transmitting plate between the light source and the substrate held by the holding means, and the And advancing / retreating drive means for moving between the retracted position and the operating position.

  According to the first to ninth aspects of the present invention, in the heat treatment apparatus using the flash lamp, in order to deflect the irradiation light from the light source in the radial direction of the substrate, the vicinity of the center of the light reaching the surface of the substrate. The illuminance and the illuminance near the periphery can be adjusted appropriately. Therefore, it is possible to irradiate the surface of the substrate with light having an appropriate illuminance distribution.

  In particular, according to the second aspect of the present invention, the light emitted from the upper light source can be guided downward while being deflected outward by the translucent plate. Therefore, it is possible to reduce the difference between the illuminance near the center and the illuminance near the periphery of the light irradiated from the planarly arranged light sources and reaching the surface of the substrate.

  In particular, according to the fifth aspect of the present invention, the light emitted from the upper light source can be guided downward while being deflected toward the center by the translucent plate.

  In particular, according to the invention described in claim 8, since the position of the auxiliary translucent plate can be switched between the operating position and the retracted position, the irradiation light from the light source depends on the state of the substrate to be processed. Deflection can be selectively performed. In addition, since the auxiliary translucent plate can be replaced with another auxiliary translucent plate having a different shape at the retracted position, the intensity and direction of light deflection can be changed depending on the state of the substrate to be processed. It can be easily changed.

  In particular, according to the ninth aspect of the present invention, the illumination light from the light source can be changed between a state where the illuminance near the periphery is lower than that near the center and a state where the illuminance is high, and an appropriate illuminance among them. The state of the distribution can be used selectively.

  According to the invention described in claim 10, in the heat treatment apparatus using an arbitrary lamp, the irradiation light from the light source is changed between a state where the illuminance near the periphery is lower than the vicinity of the center and a state where it is higher. In which an appropriate illuminance distribution state can be selectively used.

  According to the invention described in claim 11 or claim 12, in the heat treatment apparatus using an arbitrary lamp, the irradiation light from the light source can be selectively deflected depending on the state of the substrate to be processed. it can. In addition, since the auxiliary translucent plate can be replaced with another auxiliary translucent plate having a different shape at the retracted position, the intensity and direction of light deflection can be changed depending on the state of the substrate to be processed. It can be easily changed.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<1. First Embodiment>
1 and 2 are side sectional views showing the configuration of the heat treatment apparatus according to the present embodiment. This heat treatment apparatus is an apparatus for performing heat treatment on a disk-shaped semiconductor wafer or the like by irradiating flash light from a xenon flash lamp. In the following, the case where the substrate to be processed is the semiconductor wafer W will be described. However, the present invention is not limited to the semiconductor wafer W and can be applied to general substrates.

  The heat treatment apparatus includes a first light-transmitting plate 61, a bottom plate 62, and side plates 63 and 64 that form a pair of substantially cylindrical sidewalls, and a chamber surrounded by them for accommodating and heat-treating the semiconductor wafer W. 65.

  The first translucent plate 61 arranged in a horizontal posture (a posture in which the plate surface is in a parallel relationship with the horizontal plane) on the upper portion of the chamber 65 is made of, for example, a material having infrared transparency such as quartz, which will be described later. It functions as a chamber window that transmits light emitted from the light source 5 and guides it into the chamber 65. The first light transmissive plate 61 functions to transmit light emitted from the light source 5 in the effective portion 61a excluding the peripheral portion 61b formed with a shape for connecting to other members.

  FIG. 3A is a side sectional view of only the effective portion 61a of the first light transmitting plate 61, and FIG. 3B is a plan view thereof. The effective portion 61a of the first light transmissive plate 61 has a disk shape, and a concave portion 60 that is recessed in the shape of an inverted truncated cone is formed near the center on the upper surface side. That is, the bottom surface 60a of the recess 60 is a flat surface formed in a circular shape in plan view, and the side surface (peripheral portion) 60b of the recess 60 surrounds the bottom surface 60a and becomes higher toward the outside (wall thickness). The slope is formed.

  FIG. 4 shows an incident from above on the effective portion 61a of the first light transmitting plate 61 having a thickness distribution that changes in the radial direction of the semiconductor wafer W by forming such a recess 60. It is the figure which showed an example of the advancing path | route of a light ray. In FIG. 4, the traveling path of the light beam when it is assumed that the concave portion 60 is not formed in the first light transmitting plate 61 is indicated by a broken line, and compared with the actual traveling path of the light beam. The first translucent plate 61 in which the concave portion 60 is formed has negative refractive power similar to that of the concave lens as a whole, and the light beams B1 and B2 incident on the bottom surface 60a and the inclined surface 60b in the concave portion 60 are converted into the concave portion. Compared with the case where no is formed, it is deflected outward (radially outward of the semiconductor wafer W supported in a horizontal position below the first light-transmitting plate 61, that is, in a radially expanding direction) and downward. Make it transparent. That is, in the present embodiment, the first light transmission plate 61 in which the recess 60 is formed functions as a deflecting unit that deflects the irradiation light from the light source 5.

  Returning to FIGS. 1 and 2, a support pin 70 is erected on the bottom plate 62 constituting the chamber 65 so as to penetrate a heat diffusion plate 73 and a heating plate 74 described later. The support pin 70 functions as a holding unit for holding the semiconductor wafer W in a horizontal posture from the lower surface in the chamber 65 below the light source 5.

  Further, an opening 66 for carrying in and out the semiconductor wafer W is formed in the side plate 64 constituting the chamber 65. The opening 66 can be opened and closed by a gate valve 68 that rotates about a shaft 67. The semiconductor wafer W is loaded into the chamber 65 by a transfer robot (not shown) with the opening 66 opened. Further, when the semiconductor wafer W is heat-treated in the chamber 65, the opening 66 is closed by the gate valve 68.

  A lamp house 50 is disposed above the translucent plate 61. A light source 5 is present inside the lamp house 50. The light source 5 includes a plurality of (21 in the present embodiment) xenon flash lamps 69 (hereinafter also simply referred to as “flash lamps 69”) arranged in a plane along a horizontal plane. It has. The plurality of flash lamps 69 are rod-shaped lamps each having a long cylindrical shape, and are arranged in a plane parallel to each other such that the longitudinal direction thereof is along the horizontal direction. The reflector 71 is disposed above the plurality of flash lamps 69 so as to cover them entirely. In addition, a second translucent plate 72 that functions as a window that transmits light emitted from the light source 5 downward is formed in a part of the lower surface of the lamp house 50 in a horizontal posture. The second light transmissive plate 72 is made of a material having infrared transparency such as quartz, and the upper surface and the lower surface thereof are formed flat.

  The xenon flash lamp 69 includes a glass tube in which xenon gas is sealed and an anode and a cathode connected to a capacitor at both ends thereof, and a trigger electrode wound around an external portion of the glass tube. Prepare. Since xenon gas is an electrical insulator, electricity does not flow into the glass tube under normal conditions. However, if the insulation is broken by applying a high voltage to the trigger electrode, the electricity stored in the capacitor instantaneously flows into the glass tube, and the xenon gas is heated by Joule heat at that time, and light is emitted. . In the xenon flash lamp 69, the electrostatic energy stored in advance is converted into an extremely short light pulse of 0.1 millisecond to 10 millisecond. It has the feature that it can.

  Part of the light emitted from the flash lamp 69 passes directly through the second light transmitting plate 72 and the first light transmitting plate 61 and travels into the chamber 65. Further, another part of the light emitted from the flash lamp 69 is once reflected by the reflector 71, then passes through the second light transmitting plate 72 and the first light transmitting plate 61, and goes into the chamber 65.

  A heating plate 74 and a heat diffusion plate 73 are provided in the chamber 65. The heat diffusion plate 73 is attached to the upper surface of the heating plate 74. Further, a position shift prevention pin 75 of the semiconductor wafer W is attached to the surface of the heat diffusion plate 73.

The heating plate 74 is for preheating (assist heating) the semiconductor wafer W. The heating plate 74 is made of aluminum nitride and has a structure in which a heater and a sensor for controlling the heater are housed. On the other hand, the heat diffusing plate 73 diffuses the heat energy from the heating plate 74 and uniformly preheats the semiconductor wafer W. As the material of the heat diffusion plate 73, a material having a relatively low thermal conductivity such as sapphire (Al ₂ O ₃ : aluminum oxide) or quartz, or aluminum nitride is employed.

  The heat diffusing plate 73 and the heating plate 74 are configured to move up and down between the loading / unloading position of the semiconductor wafer W shown in FIG. 1 and the heat treatment position of the semiconductor wafer W shown in FIG. .

  That is, the heating plate 74 is connected to the moving plate 42 via the cylindrical body 41. The moving plate 42 can be moved up and down by being guided by a guide member 43 supported by a bottom plate 62 of the chamber 65. A fixed plate 44 is fixed to the lower end portion of the guide member 43, and a motor 40 that rotationally drives a ball screw 45 is disposed at the central portion of the fixed plate 44. The ball screw 45 is screwed with a nut 48 connected to the moving plate 42 via connecting members 46 and 47. Therefore, the heat diffusion plate 73 and the heating plate 74 can be moved up and down between the loading / unloading position of the semiconductor wafer W shown in FIG. 1 and the heat treatment position of the semiconductor wafer W shown in FIG. it can.

  The loading / unloading position of the semiconductor wafer W shown in FIG. 1 is placed on the support pin 70 by placing the semiconductor wafer W loaded from the opening 66 using a transfer robot (not shown). This is the position where the heat diffusion plate 73 and the heating plate 74 are lowered so that the completed semiconductor wafer W can be carried out from the opening 66. In this state, the upper end of the support pin 70 passes through the through holes formed in the heat diffusion plate 73 and the heating plate 74 and protrudes upward from the surface of the heat diffusion plate 73.

  On the other hand, the heat treatment position of the semiconductor wafer W shown in FIG. 2 is a position where the heat diffusion plate 73 and the heating plate 74 are raised above the upper ends of the support pins 70 in order to perform heat treatment on the semiconductor wafer W. In the process in which the heat diffusion plate 73 and the heating plate 74 are raised from the loading / unloading position of FIG. 1 to the heat treatment position of FIG. 2, the semiconductor wafer W placed on the support pins 70 is received by the heat diffusion plate 73 and its lower surface. Is supported by the surface of the heat diffusing plate 73, and is held in a horizontal position at a position close to the first light transmissive plate 61 in the chamber 65. Conversely, in the process in which the heat diffusion plate 73 and the heating plate 74 are lowered from the heat treatment position to the carry-in / carry-out position, the semiconductor wafer W supported by the heat diffusion plate 73 is transferred to the support pins 70.

  In a state where the thermal diffusion plate 73 and the heating plate 74 that support the semiconductor wafer W are raised to the heat treatment position, the translucent plate 61 is located between the semiconductor wafer W held by them and the light source 5. Note that the distance between the heat diffusion plate 73 and the light source 5 at this time can be adjusted to an arbitrary value by controlling the rotation amount of the motor 40.

  Further, between the bottom plate 62 of the chamber 65 and the moving plate 42, a telescopic bellows 77 is disposed so as to surround the cylindrical body 41 and maintain the chamber 65 in an airtight state. When the heat diffusing plate 73 and the heating plate 74 are raised to the heat treatment position, the bellows 77 contracts. When the heat diffusion plate 73 and the heating plate 74 are lowered to the loading / unloading position, the bellows 77 is expanded and the atmosphere in the chamber 65 is increased. Shut off from outside atmosphere.

  In the side plate 63 opposite to the opening 66 in the chamber 65, an introduction path 78 connected to the on-off valve 80 is formed. The introduction path 78 is for introducing a gas necessary for processing, for example, an inert nitrogen gas, into the chamber 65. On the other hand, a discharge passage 79 connected to the on-off valve 81 is formed in the opening 66 in the side plate 64. The discharge path 79 is for discharging the gas in the chamber 65, and is connected to an exhaust means (not shown) via the on-off valve 81.

  Next, the heat treatment operation of the semiconductor wafer W by the heat treatment apparatus having the above configuration will be described. A semiconductor wafer W to be processed in this heat treatment apparatus is a semiconductor wafer after ion implantation.

  In this heat treatment apparatus, in a state where the heat diffusing plate 73 and the heating plate 74 are arranged at the loading / unloading positions of the semiconductor wafer W shown in FIG. It is carried in and placed on the support pin 70. When the loading of the semiconductor wafer W is completed, the opening 66 is closed by the gate valve 68. Thereafter, the heat diffusion plate 73 and the heating plate 74 are raised to the heat treatment position of the semiconductor wafer W shown in FIG. 2 by driving the motor 40 to hold the semiconductor wafer W in a horizontal posture. Further, the on-off valve 80 and the on-off valve 81 are opened to form a nitrogen gas flow in the chamber 65.

  The heat diffusing plate 73 and the heating plate 74 are preheated to a predetermined temperature by the action of a heater built in the heating plate 74. For this reason, in a state where the heat diffusion plate 73 and the heating plate 74 are raised to the heat treatment position of the semiconductor wafer W, the semiconductor wafer W is preheated by contacting the heat diffusion plate 73 in a heated state, and the semiconductor wafer W The temperature gradually increases.

  In this state, the semiconductor wafer W is continuously heated by the heat diffusion plate 73. When the temperature of the semiconductor wafer W rises, a temperature sensor (not shown) always monitors whether or not the surface temperature of the semiconductor wafer W has reached the preheating temperature T1.

  The preheating temperature T1 is, for example, about 200 ° C. to 600 ° C., preferably about 350 ° C. to 550 ° C. Even if the semiconductor wafer W is heated to such a preheating temperature T1, ions implanted into the semiconductor wafer W will not diffuse.

  Eventually, when the surface temperature of the semiconductor wafer W reaches the preheating temperature T1, the flash lamp 69 is turned on to perform flash heating. The lighting time of the flash lamp 69 in this flash heating process is a time of about 0.1 to 10 milliseconds. Thus, in the flash lamp 69, the electrostatic energy stored in advance is converted into such an extremely short light pulse, so that an extremely strong flash light is irradiated.

  At this time, the flash light emitted from the light source 5 passes through the second light transmitting plate 72 and the first light transmitting plate 61 and reaches the surface of the semiconductor wafer W. Then, the illuminance distribution of the flash before passing through the first light transmitting plate 61 tends to gradually decrease outward as in the illuminance distribution shown in FIG. However, since the flash light is deflected outward as shown in FIG. 4 when passing through the first light-transmitting plate 61, the illuminance around the periphery is compared after passing through the first light-transmitting plate 61. Rise. In this way, the flash light after passing through the first light transmitting plate 61 reaches the surface of the semiconductor wafer W in a state where the difference between the vicinity of the center of the illuminance distribution and the vicinity of the periphery is reduced.

  The surface temperature of the semiconductor wafer W instantaneously reaches the temperature T2 due to the energy provided by such flash irradiation. This temperature T2 is a temperature necessary for the ion activation treatment of the semiconductor wafer W at about 1000 ° C. to 1100 ° C. When the surface of the semiconductor wafer W is heated to such a processing temperature T2, ions implanted into the semiconductor wafer W are activated.

  At this time, since the surface temperature of the semiconductor wafer W is raised to the processing temperature T2 in a very short time of about 0.1 to 10 milliseconds, ion activation in the semiconductor wafer W is performed in a short time. Complete. Therefore, the ions implanted into the semiconductor wafer W do not diffuse, and it is possible to prevent the phenomenon that the profile of the ions implanted into the semiconductor wafer W is lost. Since the time required for ion activation is extremely short compared with the time required for ion diffusion, the ion activation is performed even for a short time in which no diffusion of about 0.1 millisecond to 10 millisecond occurs. Complete.

  Further, before the flash lamp 69 is turned on to heat the semiconductor wafer W, the surface temperature of the semiconductor wafer W is heated to the preheating temperature T1 of about 200 ° C. to 600 ° C. using the heating plate 74. The flash lamp 69 makes it possible to quickly raise the temperature of the semiconductor wafer W to the processing temperature T2 of about 1000 ° C. to 1100 ° C.

  After such a flash heating process is completed, the heat diffusion plate 73 and the heating plate 74 are lowered to the loading / unloading position of the semiconductor wafer W shown in FIG. 1 by driving the motor 40 and are closed by the gate valve 68. The opening 66 is opened. Then, the semiconductor wafer W placed on the support pins 70 is carried out by a transfer robot (not shown). As described above, a series of heat treatment operations is completed.

  As described above, in the heat treatment apparatus according to the present embodiment, the concave portion 60 is formed on the upper surface of the first light transmitting plate 61, so that the light emitted from the upper light source 5 is transmitted by the first light transmitting plate 61. It can be guided downward while deflecting outward. Therefore, the difference between the illuminance near the center of the light reaching the surface of the semiconductor wafer W and the illuminance near the periphery can be reduced, and the surface of the semiconductor wafer W can be irradiated with light having an appropriate illuminance distribution.

  In the present embodiment, the case where the concave portion 60 is formed on the upper surface of the first light transmitting plate 61 in order to deflect the irradiation light from the light source 5 has been described. However, the first light transmitting plate 61 is different in thickness. Even if it forms in distribution, the same effect may be acquired. For example, even when the effective portion 61a of the first light transmitting plate 61 is formed in a shape as shown in each side sectional view of FIGS. 5A to 5E, the first light transmitting plate 61 as a whole is a concave lens. Thus, it is possible to deflect the light incident from above to the outside. That is, in order to obtain the effect of deflecting light outward, the first translucent plate 61 has an effective portion 61a in which the vertical thickness near the center is relatively larger than the vertical thickness near the periphery. What is necessary is just to form so that it may become thin.

  In the specific configuration example, in the structure 110 of FIG. 5A, the thinnest circular flat portion 111 exists in the central portion, and the first annular ring having an intermediate thickness is provided on the outer periphery via the first inclined annular portion 112. A flat portion 113 is provided. Further, the thickest second annular flat portion 115 is provided on the outer periphery of the first annular flat portion 113 via the second inclined annular portion 114. And these each part 111-115 has become concentric arrangement.

  This structure is a "structure in which a plurality of flat annular portions that increase in thickness are arranged concentrically on the outer periphery of a circular flat portion, and the boundary between them is an inclined surface" It is an example and has a concave lens effect as a whole.

  In the structure 120 shown in FIG. 5B, an intermediate thickness first annular flat portion 122 and a thickest second annular flat portion 123 are sequentially and concentrically arranged on the outer periphery of the circular flat portion 121 on the center side. Further, on the outer peripheral side of the second annular flat portion 123, a third annular flat portion 125 having the same thickness as the second annular flat portion 123 is provided via an annular groove (annular recess) 124. . A region from the circular flat portion 121 to the second annular flat portion 123 has a stepwise convex lens effect, and an annular groove (annular concave portion) 124 has a concave lens effect.

  This structure 120 is an example of “a structure in which a plurality of annular flat portions that increase in thickness are arranged concentrically on the outer periphery of a circular flat portion”, and the central concave lens effect and the outer convex lens as a whole. Has a combined effect with the effect.

  In the structure 130 of FIG. 5C, the central circular portion is a continuous concave curved surface portion 131, and the outer frame portion of the concave curved surface portion 131 is an annular flat portion 132, The concave curved surface part 131 has a concave lens effect.

  In the structure 140 of FIG. 5D, the central circular portion is a thin flat portion 141, and the outer frame portion of the flat portion 141 is a bowl-shaped annular convex lens portion 142. The annular convex lens portion 142 exhibits a convex lens effect on the outer edge portion of the substrate.

  The structure 150 in FIG. 5E corresponds to a structure obtained by vertically inverting the structure in FIG. 3, and a thick annular flat portion 153 is provided on the outer periphery of the flat portion 151 on the center side via an inclined annular portion 152. As a whole, the lens has a concave lens effect.

  On the contrary, depending on the state of the semiconductor wafer W to be processed, when the illuminance near the center is consciously higher than the illuminance near the periphery, the thickness in the vertical direction of the effective portion 61a of the first translucent plate 61 is What is necessary is just to form so that it may become relatively thick rather than the thickness of the perpendicular direction vicinity. Specifically, if the effective portion 61a is formed in a shape as shown in each side sectional view of FIGS. 6 (a) to 6 (b), the first translucent plate 61 is a positive lens resembling a convex lens as a whole. Therefore, light incident from above can be deflected toward the center (toward the radial center of the semiconductor wafer W supported in a horizontal position below the first light-transmitting plate 61).

  In the specific configuration example, in the structure 210 of FIG. 6A, the thickest circular flat portion 211 exists in the center portion, and the thinnest circular flat portion 213 is formed on the outer periphery via the inclined circular portion 212. By being provided, it has a convex lens effect.

  In the structure 220 of FIG. 6B, the thickest circular flat portion 211 exists in the central portion, and the thinnest annular flat portion 222 surrounds the outer periphery thereof, thereby having a convex lens effect.

  Further, in the present embodiment, the case where a predetermined thickness distribution is provided in the thickness in the vertical direction with respect to the effective portion 61a of the first light transmission plate 61 has been described. However, the second light transmission plate 72 is subjected to the same processing. Even if it exists, the same effect can be acquired. However, in the case where the irradiation light from the light source 5 is deflected outward, the above-described embodiment in which the first light transmitting plate 61 located near the lower semiconductor wafer W is used as the deflecting means is more suitable for the irradiation light. The illuminance loss can be kept small.

<2. Second Embodiment>
Subsequently, a second embodiment of the present invention will be described. In the heat treatment apparatus of the first embodiment described above, the first light transmission plate 61 is fixedly disposed on the upper portion of the chamber 65, whereas in the heat treatment apparatus of the present embodiment, the first light transmission plate 61 is provided. It can be moved up and down. In the following description, differences from the first embodiment will be mainly described, and redundant description of the same configuration and operation as in the first embodiment will be omitted.

  7 and 8 are side sectional views showing the configuration of the heat treatment apparatus according to this embodiment. 7 shows the loading / unloading position of the semiconductor wafer W as in FIG. 1 of the first embodiment, and FIG. 8 shows the heat treatment position of the semiconductor wafer W as in FIG. 2 of the first embodiment. . 7 and 8, the same reference numerals as those of the heat treatment apparatus of the first embodiment are the same as those of the first embodiment unless otherwise described below.

  The heat treatment apparatus of the present embodiment includes an annular member 51 at a position below the first light transmission plate 61 and surrounding the chamber 65. The upper surface of the annular member 51 is connected to the lower surface of the peripheral portion 61b of the first light transmitting plate 61, and the connection boundary is sealed by an O-ring or the like (not shown). In addition, the annular member 51 is connected to an elevating drive means 52 such as an air cylinder, and by operating the elevating drive means 52, a displacement in the vertical direction can be given to the annular member 51. The elevating drive means 52 is further electrically connected to the control means 10. The control means 10 can operate and adjust the raising / lowering operation by transmitting a predetermined electric signal to the raising / lowering driving means 52.

  Therefore, by raising and lowering the raising / lowering driving means 52 by the control means 10, the first light transmission plate 61 can be raised and lowered in the vertical vertical direction via the annular member 51, and the height of the first light transmission plate 61 is increased. The position can be changed. In addition to the air cylinder, various known mechanisms such as a mechanism that lifts and lowers a nut screwed to a ball screw by driving a motor can be adopted as the lifting drive means 52.

  An elastic bellows 53 is disposed between the annular member 51 and the side plates 63 and 64 so as to surround the chamber 65. For this reason, the airtight state in the chamber 65 can be maintained regardless of the height positions of the first light transmitting plate 61 and the annular member 51.

  As conceptually shown in FIG. 9, when the height position of the first light transmitting plate 61 is set to the relatively high height position P1, the height position of the first light transmitting plate 61 is set to a relatively low height. More light than the light emitted from the light source 5 thereabove can be made incident in the concave portion 60 of the first light transmitting plate 61 than when the light is matched with the position P2. That is, the concave portion 60 of the first light transmission plate 61 can receive only the light flux in the range R2 of the light flux emitted from the light source 5 at the height position P2, but the range R2 at the height position P1. It is possible to receive a light beam in a wider range R1. However, although the light reflected by the reflector 71 is not considered in FIG. 9, the same tendency applies to the light reflected by the reflector 71.

  Thus, the higher the height position of the first translucent plate 61, the more light can be received in the recess 60. On the other hand, the more light enters the recess 60 having negative refractive power in the first light transmitting plate 61, the more light is deflected outward. Therefore, the higher the height position of the first translucent plate 61, the more light is deflected outward, and the illuminance near the periphery increases below the light. The heat treatment apparatus of the present embodiment can change the illuminance distribution on the surface of the semiconductor wafer W by changing the height position of the first light transmitting plate 61 by the lift drive means 52.

  As described above, in the present embodiment, the first light transmitting plate 61 in which the concave portion 60 is formed and the elevating drive means 52 for moving the first light transmitting plate 61 up and down are used as deflecting means for deflecting the irradiation light from the light source 5. Function.

  When heat treatment of the semiconductor wafer W is performed by the heat treatment apparatus of the present embodiment, the elevating driving means 52 is driven by a signal transmitted from the control means 10 at a stage before the flash lamp 69 is turned on and the flash heating is performed. The first translucent plate 61 is moved up and down to an appropriate height position.

  FIGS. 10A to 10C are graphs showing the illuminance distribution of light emitted from the light source 5 when the first light transmitting plate 61 is arranged at three different height positions. However, the graphs of FIGS. 10A to 10C all show the illuminance distribution at the height position of the semiconductor wafer W shown in FIG. 10A to 10C, the graph of FIG. 10A shows the illuminance distribution when the first light transmitting plate 61 is at the highest position. FIG. 10C shows the illuminance distribution when is at the lowest position.

  As described above, the higher the height position of the first translucent plate 61, the more light out of the light emitted from the light source 5 is deflected outward, so that the illuminance near the periphery increases. . Therefore, when the height position of the first translucent plate 61 is too low, as shown in FIG. 10C, the illuminance near the periphery does not increase appropriately, and the illuminance distribution is not improved sufficiently. . On the contrary, when the height position of the 1st translucent board 61 is too high, as shown to Fig.10 (a), the illumination intensity of the periphery vicinity will rise more than necessary. In order to obtain a uniform illuminance distribution as shown in FIG. 10B, the first light transmission plate 61 is arranged at an appropriate height position in the middle thereof.

  However, when it is desirable to consciously create a difference in illuminance between the vicinity of the center and the vicinity, depending on the state of the semiconductor wafer W to be processed, the first transparent position is set at a height where a corresponding illuminance distribution can be obtained. An optical plate 61 is arranged.

  The height position of the first translucent plate 61 is automatically determined by the control means 10 based on information such as the size and film thickness of the semiconductor wafer W to be processed. And the control means 10 transmits the electric signal which raises / lowers the 1st translucent board 61 to the height position to the raising / lowering drive means 52. FIG.

  Thus, after the 1st translucent board 61 is arrange | positioned in a suitable height position, the flash light irradiation from the light source 5 is performed and the surface of the semiconductor wafer W will be heated.

  As described above, in the present embodiment, the surface of the semiconductor wafer W can be irradiated with light having an appropriate illuminance distribution by changing the height position of the first light transmitting plate 61 in which the recess 60 is formed on the upper surface. In particular, in the present embodiment, the illuminance near the periphery can be changed from a state lower than that near the center (state shown in FIG. 10C) to a high state (state shown in FIG. 10A). Among them, an appropriate illuminance distribution state can be selectively used.

  In addition, although this embodiment demonstrated the case where the 1st translucent plate 61 which formed the recessed part 60 in the upper surface was raised / lowered, the shape of the 1st translucent plate 61 is that the thickness of the effective part 61a is perpendicular | vertical vicinity. The same effect can be obtained if the shape is relatively thinner than the thickness in the vertical direction, for example, as shown in each of the sectional side views of FIGS. Further, depending on the state of the semiconductor wafer W to be processed, the shape of the first light transmitting plate 61 is such that the vertical thickness of the effective portion 61a is relatively thicker than the vertical thickness in the vicinity of the periphery, for example, FIG. It is good also as a shape as shown by each sectional side view of 6 (a)-(b).

  In the present embodiment, the case where the lamp constituting the light source 5 is the xenon flash lamp 69 has been described. However, the present invention can be applied to other lamps such as a halogen lamp, and similar effects can be obtained. Can be obtained.

<3. Third Embodiment>
Subsequently, a third embodiment of the present invention will be described. In the first embodiment described above, the concave portion 60 is formed on the upper surface of the first light transmissive plate 61 in order to deflect the light passing through the first light transmissive plate outward, whereas the heat treatment apparatus according to the present embodiment. Then, the light is deflected outward (in a radially spreading direction) by the auxiliary light-transmitting plate 59 that is separate from the first light-transmitting plate 61. In the present embodiment, the description will focus on the differences from the first embodiment, and redundant description of the same configuration and operation as in the first embodiment will be omitted.

  11 and 12 are side cross-sectional views showing the configuration of the heat treatment apparatus according to this embodiment. 11 shows the loading / unloading position of the semiconductor wafer W as in FIG. 1 of the first embodiment, and FIG. 12 shows the heat treatment position of the semiconductor wafer W as in FIG. 2 of the first embodiment. . In FIG. 11 and FIG. 12, the same reference numerals as those of the heat treatment apparatus of the first embodiment are the same as those of the first embodiment unless otherwise described below.

  In the heat treatment apparatus of this embodiment, an auxiliary light-transmitting plate 59 that functions as a deflecting means in this embodiment is provided between the first light-transmitting plate 61 and the second light-transmitting plate 72 whose upper and lower surfaces are formed flat. Can be inserted in a horizontal position. FIG. 13 is a plan view showing the configuration of the auxiliary translucent plate 59 and its periphery. As shown in FIGS. 11 to 13, the auxiliary translucent plate 59 has a square shape in a plan view, and a recess formed in the first translucent plate 61 in the first embodiment near the center of the upper surface thereof. Similar to 60, a concave portion 59a that is recessed in an inverted truncated cone shape is formed. The auxiliary light transmitting plate 59 is made of a material having infrared transparency such as quartz.

  The auxiliary translucent plate 59 is supported via a plurality of bearings 57 on a pair of linear guides 58 arranged in parallel and horizontally to each other, and the operation position indicated by the solid line in FIG. 11 and FIG. It is possible to move horizontally between the retracted positions indicated by. The auxiliary translucent plate 59 is connected to a part of the wire 56b through a connecting rod 56a fixed to one end thereof. The wire 56b is stretched between a drive pulley 56d fixed to the rotating shaft of a fixedly installed motor 56c and a driven pulley 56e fixed to one of the linear guides 58. The motor 56c is electrically connected to the control means 10. The control means 10 can operate and adjust its operation by transmitting a predetermined electrical signal to the motor 56c.

  Therefore, by driving the motor 56c by the control means 10, the auxiliary translucent plate 59 is moved in the horizontal direction via the driving pulley 56d, the driven pulley 56e, the wire 56b, and the connecting rod 56a, and the arrangement is set as the operating position. It is possible to switch between the retreat positions. That is, at this time, the motor 56c, the drive pulley 56d, the driven pulley 56e, the wire 56b, and the connecting rod 56a function as advancing / retreating drive means for the auxiliary light transmissive plate 59. Note that the advance / retreat driving means of the auxiliary translucent plate 59 is not limited to the mechanism shown in the present embodiment, and various known mechanisms such as a mechanism using an air cylinder and a mechanism using a linear motor may be adopted. Is possible.

  When the auxiliary light-transmitting plate 59 is disposed at the retracted position, the light emitted from the light source 5 passes through the second light-transmitting plate 72 and the first light-transmitting plate 61 whose upper and lower surfaces are formed flat, and is deflected. Without reaching the surface of the semiconductor wafer W.

  On the other hand, when the auxiliary translucent plate 59 is disposed at the effective position, a part of the light emitted from the upper light source 5 passes through the second translucent plate 72 and then the concave portion of the auxiliary translucent plate 59. Incident to 59a. The light incident on the recess 59a is deflected outward as in the state of FIG. 4 in the first embodiment, and then passes through the first light transmitting plate 61 and reaches the surface of the semiconductor wafer W.

  When the heat treatment of the semiconductor wafer W is performed by the heat treatment apparatus of the present embodiment, it is necessary to deflect the light emitted from the light source 5 outward based on information such as the size and film thickness of the semiconductor wafer W to be processed. It is determined in advance in the control means 10 whether or not there is. Whether the light needs to be deflected is determined by the control means 10 based on information such as the size and film thickness of the semiconductor wafer W to be processed.

  If it is determined that light deflection is unnecessary, the auxiliary light-transmitting plate 59 is moved from the control means 10 to the motor 56c to the retracted position before the flash heating is performed. Send electrical signals. The motor 56c is driven based on the received electrical signal, and moves the auxiliary translucent plate 59 to the retracted position via the drive pulley 56d, the wire 56b, and the connecting rod 56a. Then, flash irradiation is performed from the light source 5 to the semiconductor wafer W without passing through the auxiliary translucent plate 59, and the surface of the semiconductor wafer W is heated.

  On the other hand, if it is determined that light deflection is necessary, the auxiliary light transmissive plate 59 is moved from the control means 10 to the motor 56c to the operating position before the flash heating is performed. Send electrical signals. The motor 56c is driven based on the received electrical signal, and moves the auxiliary translucent plate 59 to the operating position via the drive pulley 56d, the wire 56b, and the connecting rod 56a. Then, flash light irradiation is performed from the light source 5 to the semiconductor wafer W through the auxiliary translucent plate 59, and the surface of the semiconductor wafer W is heated.

  As described above, in the heat treatment apparatus of the present embodiment, the difference between the illuminance near the center of the light emitted from the light source 5 and the illuminance near the periphery is inserted by inserting the auxiliary translucent plate 59 in which the recess 59a is formed. Can be reduced, and the surface of the semiconductor wafer W can be irradiated with light having an appropriate illuminance distribution. In particular, in this embodiment, since the position of the auxiliary translucent plate 59 can be switched between the operating position and the retracted position, the irradiation light from the light source 5 is deflected depending on the state of the semiconductor wafer W to be processed. It can be done selectively. Further, in the heat treatment apparatus of the present embodiment, the auxiliary translucent plate 59 can be replaced with another auxiliary translucent plate having a different shape at the retracted position, so that the state of the semiconductor wafer W to be processed is Thus, the intensity and direction of light deflection can be easily changed.

  In addition, although this embodiment demonstrated the case where the recessed part 59a was formed in the upper surface of the auxiliary | assistant translucent board 59, like the 1st translucent board 61 of 1st Embodiment, Fig.5 (a)-(e) or The shape as shown in each sectional side view of FIGS. That is, if the auxiliary translucent plate 59 has a predetermined thickness distribution that changes in the radial direction of the semiconductor wafer W, the light emitted from the light source 5 can be deflected in the radial direction of the semiconductor wafer W.

  Further, unlike the first light transmissive plate 61 that constitutes the upper surface of the chamber 65, the auxiliary light transmissive plate 59 does not need to be able to block the atmosphere above and below it. Therefore, the ring shape as shown in the end views of FIGS. Furthermore, it may be a shape having an area smaller than the effective portion of the first light transmission plate 61 in plan view, such as the ring shape or the shape shown in the side sectional view of FIG. .

  In the present embodiment, the operation position of the auxiliary translucent plate 59 has been described as being a position separated from the upper surface of the first translucent plate 61. However, a space is provided on the upper surface of the first translucent plate 61. The form which is the position mounted without separating may be sufficient.

  In the present embodiment, the case where the upper surface and the lower surface of the first light transmitting plate 61 are formed flat has been described, but the first light transmitting plate 61 is also illustrated in FIGS. 3 and 5A to 5E. 6 (a) to 6 (b), the effective portion 61a may have a shape that makes a difference between the vertical thickness near the center and the vertical thickness near the periphery. By doing so, it is possible to use both the light deflection effect by the auxiliary light transmission plate 59 and the light deflection effect by the first light transmission plate 61. In this case, both the auxiliary translucent plate 59 and the first translucent plate 61 function as deflecting means for deflecting the irradiation light from the light source 5. Furthermore, the raising / lowering drive means 52 which was demonstrated by 2nd Embodiment is also arrange | positioned, and the 1st translucent board 61 is good also as raising / lowering. In this case, the auxiliary light transmissive plate 59, the first light transmissive plate 61, and the lifting / lowering drive means 52 all function as deflecting means for deflecting the irradiation light from the light source 5.

  In the present embodiment, the case where the lamp constituting the light source 5 is the xenon flash lamp 69 has been described. However, the present invention can be applied to other lamps such as a halogen lamp, and similar effects can be obtained. Can be obtained.

  In each of the above embodiments, since a circular semiconductor substrate (wafer) is assumed as the substrate, the “diameter direction of the substrate” corresponds to a radiation direction passing through the center of the circle, but the substrate for a liquid crystal display device The “diameter direction of the substrate” in a general shape including the case of such a square substrate refers to a group of directions orthogonal to each part of the outline of the substrate.

It is a sectional side view which shows the structure of the heat processing apparatus which concerns on 1st Embodiment. It is a sectional side view which shows the structure of the heat processing apparatus which concerns on 1st Embodiment. It is the sectional side view and top view of only the effective part 61a of the 1st translucent board 61 of 1st Embodiment. It is the figure which showed an example of the advancing path | route of the light ray which injects from upper direction with respect to the effective part 61a of the 1st translucent plate 61 of 1st Embodiment. It is a sectional side view of the variation of the 1st translucent board 61 formed so that the thickness of the perpendicular direction vicinity of the center of the effective part 61a might become relatively thinner than the thickness of the perpendicular direction vicinity of the periphery. It is a sectional side view of the variation of the 1st translucent board 61 formed so that the thickness of the perpendicular direction vicinity of the center of the effective part 61a might become relatively thicker than the thickness of the perpendicular direction vicinity of the periphery. It is a sectional side view which shows the structure of the heat processing apparatus which concerns on 2nd Embodiment. It is a sectional side view which shows the structure of the heat processing apparatus which concerns on 2nd Embodiment. It is the figure which showed notionally the change of the light radiate | emitted from the upper light source 5, and injecting into the recessed part 60, when the height position of the 1st translucent board 61 is changed. It is the graph which showed the illumination intensity distribution of the light irradiated from the light source 5 when the 1st translucent board 61 is arrange | positioned in three different height positions. It is a sectional side view which shows the structure of the heat processing apparatus which concerns on 3rd Embodiment. It is a sectional side view which shows the structure of the heat processing apparatus which concerns on 3rd Embodiment. It is a top view which shows the structure of the auxiliary | assistant light transmission board 59 of 3rd Embodiment, and its periphery. FIG. 6 is an end view and a side sectional view showing a variation of the auxiliary light transmissive plate 59 having an area smaller than the effective portion of the first light transmissive plate 61 in plan view. It is the figure which showed the conventional illuminance distribution in the horizontal surface under the light source.

Explanation of symbols

DESCRIPTION OF SYMBOLS 5 Light source 10 Control means 52 Elevating drive means 56a Connecting rod 56b Wire 56c Motor 56d Drive pulley 56e Driven pulley 59 Auxiliary light transmission plate 59a Recess 60 Recess 60b Inclined surface 61 First light transmission plate 61a Effective portion 65 Chamber 69 Xenon flash lamp 70 Support pin 71 Reflector 72 Second light transmitting plate W Semiconductor wafer

Claims (12)

A heat treatment apparatus for heating a disk-shaped substrate by irradiating light,
A light source in which a plurality of flash lamps are arranged in a plane along a horizontal plane;
Holding means for holding the substrate in a horizontal position below the light source;
Deflecting means for deflecting irradiation light from the light source in a radial direction of the substrate held by the holding means;
A heat treatment apparatus comprising: The heat treatment apparatus according to claim 1,
The deflection means includes
In an effective portion that is disposed in a horizontal posture between the light source and the substrate held by the holding means and transmits light emitted from the light source, the vertical thickness near the center is the vertical thickness near the periphery. The heat processing apparatus characterized by including the translucent board formed so that it might become relatively thinner than this. The heat treatment apparatus according to claim 2,
The light-transmitting plate has a recess near the center of the upper surface of the effective portion. The heat treatment apparatus according to claim 3,
The peripheral part of the said recessed part becomes the inclined surface which becomes thick toward an outer side, The heat processing apparatus characterized by the above-mentioned. The heat treatment apparatus according to claim 1,
The deflection means includes
In an effective portion that is disposed in a horizontal posture between the light source and the substrate held by the holding means and transmits light emitted from the light source, the vertical thickness near the center is the vertical thickness near the periphery. The heat processing apparatus characterized by including the translucent board formed so that it might become relatively thicker. A heat treatment apparatus according to any one of claims 2 to 5,
The deflecting unit further includes an auxiliary translucent plate separate from the translucent plate disposed in a horizontal posture between the light source and the substrate held by the holding unit,
The heat treatment apparatus, wherein the auxiliary translucent plate has a predetermined thickness distribution that varies in a radial direction of the substrate. A heat treatment apparatus according to any one of claims 2 to 5,
The deflecting unit further includes an auxiliary translucent plate separate from the translucent plate disposed in a horizontal posture between the light source and the substrate held by the holding unit,
The auxiliary light-transmitting plate has a smaller area than the effective portion of the light-transmitting plate in plan view. The heat treatment apparatus according to claim 6 or 7,
And advancing / retreating drive means for moving the auxiliary translucent plate between an operating position between the light source and the substrate held by the holding means and a position retracted from the operating position. Heat treatment equipment. A heat treatment apparatus according to any one of claims 2 to 8,
The heat treatment apparatus, wherein the deflecting unit further includes an elevating drive unit for elevating and lowering the translucent plate. A heat treatment apparatus for heating a substrate by irradiating light,
A light source having a plurality of lamps arranged in a plane along a horizontal plane;
Holding means for holding the substrate below the light source;
In an effective portion that is disposed in a horizontal posture between the light source and the substrate held by the holding means and transmits light emitted from the light source, the vertical thickness near the center is the vertical thickness near the periphery. A translucent plate formed so as to be relatively thinner,
Elevating drive means for elevating and lowering the translucent plate;
A heat treatment apparatus comprising the heat treatment apparatus. A heat treatment apparatus for heating a substrate by irradiating light,
A light source having a plurality of lamps arranged in a plane along a horizontal plane;
Holding means for holding the substrate below the light source;
A translucent plate disposed in a horizontal position between the light source and the substrate held by the holding means;
An auxiliary translucent plate disposed in a horizontal posture and having a predetermined thickness distribution that varies in the radial direction of the substrate;
Forward / backward drive means for moving the auxiliary light-transmitting plate between an operating position between the light source and the substrate held by the holding means and a position retracted from the operating position;
A heat treatment apparatus comprising: A heat treatment apparatus for heating a substrate by irradiating light,
A light source having a plurality of lamps arranged in a plane along a horizontal plane;
Holding means for holding the substrate below the light source;
A light-transmitting plate disposed in a horizontal posture between the light source and the substrate held by the holding means, and transmitting the irradiation light from the light source in an effective portion thereof;
An auxiliary translucent plate disposed in a horizontal position and having an area smaller than the effective portion of the translucent plate in plan view;
Forward / backward drive means for moving the auxiliary light-transmitting plate between an operating position between the light source and the substrate held by the holding means and a position retracted from the operating position;
A heat treatment apparatus comprising:

Images