JP2005101558A - Method of manufacturing semiconductor device, electronic device, method of manufacturing the same, and display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing semiconductor device by which first and second conductive films are surely connected electrically to each other through a contact hole formed in an insulating film, and the manufacturing cost of a semiconductor device is reduced by far improving the utilizing efficiency of a liquid material required for the formation of the second conductive film. <P>SOLUTION: The method of manufacturing the semiconductor device includes: an insulating film forming step ST0 of forming the insulating film on the first conductive film and, at the same time, the contact hole through the insulating film; a mask material forming step ST1 of forming a mask material which is opened in an area on the insulating film including the contact hole; a liquid material arranging step ST2 of selectively arranging the liquid material in an area on the insulating film including the contact hole through the opening of the mask material; a drying step ST3 of forming the second conductive film partially embedded in the contact hole by drying and solidifying the liquid material; and a mask material removing step ST4. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor device manufacturing method, an electronic device manufacturing method, an electronic device, and a display device.

Taking an example of a semiconductor device as an example of an electronic device, the semiconductor device has been miniaturized and highly integrated in an example such as an LSI (Large Scale Integrated Circuit). For this reason, a technique has been proposed in which, for example, an upper wiring portion and a lower wiring portion of a semiconductor device are electrically connected by metal wiring through a fine contact hole (connection hole) (for example, Patent Document 1).
JP-A-7-22346 (pages 4 to 5, FIG. 1)

  However, in the method of wiring by forming a metal in the contact hole as described above, the following problems have arisen with the miniaturization and high integration of the semiconductor device. That is, the contact hole aspect ratio has increased with miniaturization and high integration, which has led to a decrease in the coverage of metal wiring in the contact hole, and the reliability of electrical connection of electronic devices is a major problem. It has become.

  As a method for solving such a problem, a method of improving the coverage rate of the metal wiring in the contact hole by forming a metal wiring by a sputtering method in a vacuum and then performing, for example, a high temperature heat treatment (reflow method) is known. Yes. However, since it is necessary to heat to a high temperature of 400 ° C. or higher in the reflow method, the metal wiring film may be deteriorated by heating, or a void may be generated in the metal wiring in the contact hole. There is a risk of causing problems in electrical reliability such as disconnection of metal wiring.

  Therefore, the present invention solves the above-described problems, and can electrically and reliably connect the first conductive film and the second conductive film through a contact hole (through connection hole) formed in the insulating film. An object of the present invention is to provide a method of manufacturing a semiconductor device capable of dramatically reducing the material use efficiency of a liquid material used for forming the substrate and realizing cost reduction.

  In order to solve the above problems, the present invention provides a method for manufacturing a semiconductor device having a conductive connection structure in which a first conductive film and a second conductive film provided via an insulating film are electrically connected. Forming an insulating film on the first conductive film and forming a contact hole reaching the first conductive film through the insulating film; and the insulating film including the contact hole A mask material forming step for forming a mask material opened in an upper region, and a liquid material arranging step for selectively arranging a liquid material in a region on the insulating film including the contact hole through the opening of the mask material And a drying step of forming the second conductive film partially embedded in the contact hole by drying and solidifying the liquid material.

In the manufacturing method, an insulating film having a contact hole is formed on the first conductive film in the insulating film forming step, and a mask material having an opening in a planar region including the contact hole is formed in the subsequent mask material forming step. . Then, in the liquid material arranging step, the liquid material is selectively arranged in the opening formed by the opening of the mask material and the contact hole. Thereafter, the liquid material in the opening is dried and baked in a drying step, thereby obtaining a conductive film including a conductive connection member embedded in the contact hole.
Thus, in this manufacturing method, when forming the second conductive film in the region including the contact hole provided in the insulating film, the liquid material is supplied to the opening of the mask material including the contact hole. Therefore, the liquid material excellent in fluidity is satisfactorily filled in the contact hole. The second conductive film obtained by drying and solidifying the liquid material is well conductively connected to the first conductive film on the lower layer side through the contact hole. Therefore, according to this manufacturing method, it is possible to manufacture a semiconductor device excellent in the reliability of the conductive connection structure between the first conductive film and the second conductive film via the contact hole. In addition, according to the manufacturing method, since high temperature treatment (reflow treatment) for improving the contact of the conductive film in the contact hole is not required, there is no deterioration of the conductive film or generation of voids due to heating. A semiconductor device having excellent reliability can be obtained.

In the method of manufacturing a semiconductor device according to the present invention, the insulating film forming step includes forming a mask pillar in a region on the first conductive film where the contact hole is to be formed, and insulating the region excluding the mask pillar. Forming a film;
And a step of removing the mask pillar and forming a contact hole in the insulating film.
In such a manufacturing method, after providing a mask pillar at a position where a contact hole is to be formed, an insulating film is formed around the mask pillar. Thereafter, when the mask pillar is removed, a through hole is formed in the insulating film, which can be used as a contact hole. Therefore, according to this manufacturing method, it is not necessary to dry-etch the insulating film in order to form the contact hole, and an expensive vacuum apparatus is not required. For this reason, the contact hole can be formed quickly, the labor and energy for forming the contact hole can be saved, and the cost of the electronic device can be reduced. Further, since the present invention does not use a method called dry etching, problems such as plasma damage and photoresist hardening do not occur. Furthermore, in the present invention, the lower conductive layer is exposed to a mask pillar (eg, photoresist) remover, and the conductive layer is not etched. Therefore, the contact hole can be formed stably and with high accuracy.

In the method for manufacturing a semiconductor device of the present invention, the insulating film forming step includes an insulating material applying step for applying a liquid insulating material onto the first conductive film, and an insulating material solidifying step for solidifying the applied liquid insulating material. It may be a process including:
According to this manufacturing method, an insulating film can be formed without using a vacuum apparatus or the like, and the process can be simplified and the cost can be reduced.

  In the semiconductor device manufacturing method of the present invention, the insulating material solidifying step may be a step of heating and solidifying the liquid insulating material. As a liquid insulating material used for forming an insulating film using a liquid insulating material, SOG (Spin On Glass) having a siloxane bond, polysilazane, polyimide, a low dielectric constant material (so-called Low-K material), or the like is used. be able to. The liquid insulating material does not necessarily have insulating properties, and the finally obtained film may be an insulating film. These liquid insulating materials can be formed into insulating films by generally applying heat treatment after being dissolved in an organic solvent. Therefore, it is desirable to perform the insulating material solidification step by heating the liquid insulating material.

In the method for manufacturing a semiconductor device of the present invention, in the insulating film forming step, the insulating film made of a photosensitive resin material is formed on the first conductive film, and the insulating film is exposed and developed. Thus, the contact hole penetrating the insulating film can be formed.
This manufacturing method is applied when the insulating film made of an organic material is formed. In the case of forming an insulating film made of an organic insulating material, the contact hole can be formed by directly exposing and developing the insulating film formed using the photosensitive resin material, and the insulating film and the contact hole can be easily formed.

  In the method for manufacturing a semiconductor device of the present invention, when forming the mask material, a photosensitive resin film made of a photosensitive resin material is formed on the insulating film, and the photosensitive resin film is exposed and developed. A mask material having an opening including the contact hole can also be formed.

In the method for manufacturing a semiconductor device of the present invention, prior to the liquid material arranging step, the mask material provided on the insulating film is arranged under reduced pressure and heated to a predetermined temperature, and ultraviolet rays are applied to the mask material. It can also be set as the manufacturing method which has the hardening process to irradiate.
In this manufacturing method, when the mask material is placed under reduced pressure, the water dissolved in the mask material is released from the mask material. And, by irradiation with ultraviolet rays, the crosslinking reaction can be promoted without being affected by moisture, the mask material can be made dense, and heat resistance and chemical resistance can be improved.

The semiconductor device manufacturing method of the present invention may be a manufacturing method further comprising a heat treatment step of heating the mask material to a high temperature equal to or higher than the predetermined temperature after the ultraviolet irradiation.
A heat treatment step for heating the mask material to a temperature equal to or higher than the predetermined temperature can be added after the curing step. As a result, the mask material can be made denser and more excellent in heat resistance and chemical resistance, and at the same time, gas emission from the mask material can be reduced in the heat treatment in the subsequent drying process.

  In the method for manufacturing a semiconductor device of the present invention, it is preferable that the processing temperature in the drying step is equal to or lower than the processing temperature in the thermosetting processing step. Thereby, it is possible to effectively prevent the mask material from being deteriorated by the subsequent heat treatment.

  In the semiconductor device manufacturing method of the present invention, the mask material is made of an inorganic material, and when forming the mask material, a mask material film forming step of forming a mask material film made of an inorganic material on the insulating film; It can also be set as the manufacturing method including the patterning process patterned by photo-etching the said mask material film. For vapor deposition of the mask material film made of an inorganic material such as aluminum, physical vapor deposition such as vacuum vapor deposition or sputtering, or chemical vapor deposition such as CVD can be used. The photo-etching is a method in which a resist mask is formed on the upper surface of the mask material film using a photolithography method, and the mask material film is etched using this resist mask.

In the method for manufacturing a semiconductor device of the present invention, a method having a liquid repellent treatment step of making the surface of the mask material liquid repellent prior to the liquid material arranging step may be employed. If the liquid repellent treatment is applied to the mask material, the liquid material can be prevented from adhering to the upper surface of the mask material when the liquid film is formed by applying the liquid material, and the second conductive film can be formed stably. In addition, the mask material can be easily removed. The liquid repellent treatment can be performed by exposing the mask material to activated fluorine or the like. Active fluorine can be easily obtained by generating plasma (so-called atmospheric pressure plasma) from a fluorine-based gas such as carbon tetrafluoride (CF ₄ ) in an atmospheric pressure state. Note that the liquid repellent treatment is unnecessary if the mask material is formed of a liquid repellent photoresist.

In the method of manufacturing a semiconductor device according to the present invention, when forming the mask pillar, a liquid organic material is selectively supplied to a contact hole forming region on the first conductive film, and the liquid organic material is solidified to form the mask. Pillars can also be formed.
In the method for manufacturing a semiconductor device of the present invention, when forming the mask pillar, a step of applying a liquid organic material on the first conductive film, and a solidification step of solidifying the liquid organic material to form an organic film And a patterning step of forming the mask pillar by exposing and developing the organic film.
Any of the above methods can be employed for forming the mask pillar for forming the contact hole. In particular, when the mask pillar is formed by selectively disposing a liquid organic material, a removal process at the time of pattern formation of the mask pillar is unnecessary, and the manufacturing process is simplified. In order to selectively dispose the liquid organic material in this way, a droplet discharge method using a droplet discharge device is suitable.

  The semiconductor device manufacturing method of the present invention includes a curing step in which the mask pillar provided in the contact hole formation region is disposed under reduced pressure, and the mask pillar is irradiated with ultraviolet rays while the mask pillar is heated to a predetermined temperature. It can also be set as a manufacturing method. When the mask pillar is placed under reduced pressure, the water dissolved in the mask pillar is released from the mask pillar. And, by irradiation with ultraviolet rays, the crosslinking reaction can be promoted without being affected by moisture, the mask material can be made dense, and heat resistance and chemical resistance can be improved.

  In the method for manufacturing a semiconductor device of the present invention, the curing step may include a heat treatment step of heating the mask pillar to a high temperature equal to or higher than the predetermined temperature after the ultraviolet irradiation. A heat treatment step for heating the mask pillar to a temperature equal to or higher than the predetermined temperature can be added after the curing step. As a result, it is possible to obtain a mask pillar that is denser and has excellent heat resistance and chemical resistance, and it is possible to reduce gas emission from the mask pillar in the heat treatment in the insulating film forming process performed thereafter.

  The method for manufacturing a semiconductor device of the present invention may include a step of performing a liquid repellent treatment on the mask pillar. If a liquid repellent treatment is applied to the mask pillar, it is possible to prevent the liquid insulating material from adhering to the upper surface of the mask pillar when the insulating film is formed by applying the liquid insulating material, and the mask pillar is easily removed. Can be done. The liquid repellent treatment method is the same as the liquid repellent treatment of the previous mask material.

  The method for manufacturing an electronic device of the present invention includes the method for manufacturing a semiconductor device of the present invention described above. According to this manufacturing method, an electronic device having excellent electrical characteristics and high reliability can be easily manufactured.

  The electronic device of the present invention is characterized by including the semiconductor device obtained by the manufacturing method of the present invention described above. According to this configuration, the conductive film can be satisfactorily formed even in the contact hole having a high aspect ratio, and the etching method and the CMP process are not required, so that the material can be obtained by the manufacturing method of the present invention with high efficiency. An electronic device having a semiconductor device and having excellent electrical characteristics and reliability while being inexpensive can be obtained.

  The display device of the present invention includes the semiconductor device obtained by the manufacturing method according to the present invention described above. According to this configuration, since the semiconductor device obtained by the manufacturing method of the present invention that does not require etch back processing or CMP processing and has high material use efficiency is provided, it is inexpensive but has electrical characteristics and reliability. It is possible to obtain a display device having excellent properties, such as a liquid crystal display device or an organic EL display device.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described with reference to the drawings.
FIG. 1 and FIG. 2 are views showing a preferred embodiment of a method for manufacturing a semiconductor device according to the present invention and showing basic manufacturing steps of the manufacturing method. FIG. 3 is a flowchart showing a semiconductor device manufacturing method 10 according to the present invention. 1 to 3 includes an insulating film forming step ST0, a mask material forming step ST1, a liquid material arranging step ST2, a drying step ST3, and a mask material removing step ST4.
FIG. 1 shows the insulating film forming step ST0 among the above steps, and FIG. 2 shows the steps after the mask material forming step ST1.

The semiconductor device manufacturing method 10 of the present invention is suitably used for manufacturing a semiconductor device 100 as shown in FIG. 4, for example. The semiconductor device 100 includes a substrate 20, transistors 35 and 36, a first conductive film (semiconductor layer) 21, an insulating film 22, and a second conductive film 30. The second conductive film 30 includes a connection portion between the conductive films through contact holes provided in the interlayer insulating film 32, and also corresponds to the contact holes corresponding to the source / drain regions of the transistors 35 and 36. Part of it is buried and electrically connected.
Note that the semiconductor device 100 illustrated in FIG. 4 is an example of a semiconductor device to which the manufacturing method according to the present invention can be applied, and the number of stacked conductive films and interlayer insulating films is not limited to the example illustrated in FIG. .

Here, FIG. 5 is a schematic configuration diagram of a spin coater used for applying a liquid material to the substrate 20 in the manufacturing method of the present embodiment. The spin coater 200 shown in FIG. 5 is an apparatus used in a plurality of steps included in the manufacturing process described below. FIG. 5 shows a case where the spin coater 200 is used for forming the insulating film 208 in the insulating film forming step ST0. ing.
FIG. 6 is a schematic configuration diagram of a UV irradiation apparatus 200A ((A) diagram) and an atmospheric pressure plasma apparatus 300 ((B) diagram) used in a mask material forming step ST1 described later. FIG. 7 is a schematic configuration diagram of a liquid material filling apparatus 400 used in a liquid material arrangement step ST2 described later. FIG. 8 is a schematic configuration diagram of a drying and firing apparatus 500 used in a later-described drying step ST3. FIG. 9 is a schematic configuration diagram of a mask material removing apparatus 600 used in a mask material removing process described later.

<Insulating film forming step ST0>
FIG. 1A-1 to FIG. 1A-4 are diagrams specifically illustrating an insulating film forming step ST0 of the method 10 for manufacturing a semiconductor device.

In the insulating film forming step ST0, first, as shown in FIG. 1A-1, a base insulating film 99 such as silicon oxide is formed on the surface of the substrate 20 such as glass. The base insulating film 99 can be formed by a vapor phase method such as a CVD method, but can also be formed by the following liquid phase method.
When the base insulating film 99 is formed by a liquid phase method, a liquid material (liquid insulating material) containing an insulating material such as SOG having a siloxane bond is applied to the substrate 20, and this is baked and thermally decomposed. Thereby, it is not necessary to use an expensive vacuum device or the like, and input energy and time required for film formation can be saved. In the case of this embodiment, the liquid insulating material is applied by a spin coating method using a spin coater 200 as shown in FIG. That is, in a state where the table 207 on which the substrate 20 is placed is rotated by the motor 206, the liquid insulating material is disposed on the substrate 20 from the liquid material supply unit 205, and the liquid insulating material is wetted and spread over the entire surface of the substrate 20. Make it.
The liquid insulating material may be applied by dip coating, liquid mist chemical deposition (LSMCD), slit coating, or the like.

  Further, the liquid insulating material can be applied by a quantitative discharge device such as a printer head of a so-called ink jet printer. By using this quantitative discharge device, it is possible to apply only to a desired portion, so that the material can be saved. Further, as the liquid insulating material, a material obtained by dispersing or dissolving polysilazane, polyimide, Low-K material or the like in a predetermined solvent such as xylene can be used.

The constituent material of the substrate 20 is not particularly limited, and any material can be used. Specifically, in addition to the glass listed above, various insulating materials (dielectrics) such as quartz, silicon nitride, polyethylene terephthalate, polyimide, various low dielectric constant materials (so-called low-K materials), silicon (for example, , Amorphous silicon, polycrystalline silicon, etc.), ITO (indium tin oxide), IO (indium oxide), SnO ₂ (tin oxide), ATO (antimony tin oxide), IZO (indium zinc oxide), Al, A conductive material such as an Al alloy, Cr, Mo, or Ta can be used.

Next, the first conductive film 21 is formed on the base insulating film 99. The first conductive film 21 can be formed, for example, by patterning a metal film formed using a film forming method such as a sputtering method into a predetermined planar shape by a photolithography method. The following liquid phase method is used. It can also be formed.
In the case of the liquid phase method, a liquid repellent film (not shown) such as a fluororesin film is formed on the base insulating film 99, and then a conductive film formation region (first conductive film 21 of the liquid repellent film) is formed. The region to be formed) is selectively irradiated with ultraviolet rays, and the liquid repellent film in the conductive film forming region is decomposed and removed to be patterned to form a liquid repellent bank. Thereafter, a liquid material containing a conductive material (for example, a liquid material containing an organometallic compound as a main component) is applied to the conductive film formation region on the base insulating film 99, and this is heat-treated to obtain the first conductive film 21.

  Next, a photoresist, which is a liquid organic material, is applied to the entire surface of the substrate 20 so as to cover the first conductive film 21 and the base insulating film 99. Then, the applied photoresist is dried (prebaked) at a temperature of 70 to 90 ° C. to form a resist film (mask material film) 204a as shown by a two-dot chain line in FIG. The liquid organic material may be a photosensitive resin (for example, polyimide). In addition, the liquid organic material can be applied by spin coating, dip coating, LSMCD, slit coating, and application by a quantitative discharge device, similarly to the application of the liquid insulating material.

  Next, the resist film 204 a is exposed and developed by photolithography, and the resist film is left only in the contact hole formation region on the first conductive film 21 to form the mask pillar 204. The mask pillar 204 is formed at a height equal to or higher than the thickness of the insulating film for forming the contact hole. Alternatively, the insulating film may be formed higher than the application thickness of the liquid material. Further, the mask pillar 204 performs a curing process as necessary. In the embodiment, the mask pillar 204 is cured as follows.

  First, the substrate 20 on which the mask pillar 204 is formed is carried into a vacuum chamber (not shown), and the inside of the vacuum chamber is depressurized to, for example, 1.3 kPa (10 Torr) or less, for example, about 0.2 Torr. The mask pillar 204 is heated to a predetermined temperature, for example, a normal photoresist post-bake temperature of about 100 to 150 ° C. (eg, 130 ° C.), and the mask pillar 204 is irradiated with ultraviolet light having a wavelength of about 254 nm for several minutes. . Thereby, in the mask pillar 204, the dissolved water is dehydrated and the crosslinking reaction is accelerated by the ultraviolet rays. Moreover, since the mask pillar 204 is not affected by oxygen or moisture, the cross-linking reaction proceeds and the mask pillar 204 becomes dense and heat resistance and chemical resistance are improved.

  Further, the curing process of the mask pillar 204 may be performed by performing a heat treatment for heating the mask pillar 204 to a post-bake temperature or higher as necessary. This heat treatment is performed, for example, at a temperature of 300 ° C. to 450 ° C. for about 10 minutes. As a result, a mask pillar having excellent heat resistance and chemical resistance can be obtained, and various liquid film forming materials can be used. The ultraviolet irradiation atmosphere may be, for example, an atmosphere (for example, a nitrogen atmosphere) substantially free of oxygen and moisture other than the reduced pressure state.

  Next, as illustrated in FIG. 1A-2, a liquid insulating material 208 a is applied to the entire surface of the substrate 20 excluding the mask pillar 204. The liquid insulating material 208a is a liquid insulating material containing an insulating material such as SOG having a siloxane bond. Thereby, it is not necessary to use an expensive vacuum device or the like, and input energy and time required for film formation can be saved. The liquid insulating material 208a is applied using a spin coater 200 shown in FIG. That is, while the table 207 on which the substrate 20 is placed is rotated by the motor 206, the liquid insulating material 208a is disposed on the substrate 20 from the liquid material supply unit 205, and the liquid insulating material is wetted on the entire surface of the substrate 20. Spread.

When the liquid insulating material 208a is applied over the substrate 20, the insulating film 208 shown in FIG. 1A-3 is obtained by baking and solidifying the liquid insulating material at about 400 ° C. Thereafter, by removing the mask pillar 204, a contact hole 40 having a depth of, for example, about 200 nm is formed at the position where the mask pillar 204 is erected, as shown in FIG.
The mask pillar 204 is preferably subjected to a liquid repellent treatment before applying a liquid insulating material for forming the insulating film 208. As a result, the liquid insulating material can be prevented from adhering to the upper surface of the mask pillar 204, and the mask pillar 204 can be easily removed. The liquid repellent treatment of the mask pillar is performed by decomposing a gas containing fluorine atoms such as carbon tetrafluoride with plasma to generate active fluorine single atoms and ions, and exposing the mask pillar 204 to the active fluorine. Can do.

  In the present embodiment, a method of forming the insulating film 208 having the contact hole 40 by applying a liquid insulating material on the substrate 20 with the mask pillar 204 standing on the first conductive film 21 and then baking the liquid insulating material. The contact hole 40 may be formed by patterning a mask material using a photoresist on the insulating film 208 grown by vapor deposition by CVD, sputtering, or the like, and then performing dry or wet etching. Absent.

<Mask material forming step ST1>
Next, the process proceeds to the bank formation step ST1 in FIG.
The insulating film 208 illustrated in FIG. 2B has already been solidified by evaporation of the solvent and thermal reaction. On the insulating film 208, a bank 209 as a mask material is formed using a photosensitive resin material (organic material). Specifically, it can be formed by applying a photoresist (or photosensitive polyimide or the like) on the substrate 20 using, for example, a spin coater 200. In addition, a part of the photoresist is opened by exposing and developing the photoresist after coating. The bank 209 can also be formed using the same material as the insulating film 208. The film thickness of the bank 209 is, for example, 1.0 μm.

  The bank 209 includes an opening 49 having an opening diameter D2 larger than the opening diameter D1 of the existing contact hole 40 in the insulating film 208, as shown in FIG. The opening 49 and the contact hole 40 communicate with each other, including the planar region of the hole 40.

  A UV irradiation apparatus 250 shown in FIG. 6A includes a chamber 201A and a vacuum suction unit 202A. A light irradiation unit 303 is provided in the chamber 201A, and the light irradiation unit 303 can irradiate UV light L, for example. The UV irradiation device 250 performs a curing process on the bank 209, and irradiates the bank 209 with UV light L from the light irradiation unit 303 in a state where the inside of the chamber 201A in which the substrate 20 is stored is kept in a vacuum. Thus, the bank 209 is polymerized and cured. A heater 597 disposed on the stage 599 on which the substrate 20 is placed gives a post-bake temperature to the bank 209.

  Specific UV irradiation processing procedures are exemplified below. The pressure inside the chamber 201A is reduced to, for example, 1.3 kPa (10 Torr) or less, for example, about 0.2 Torr. Then, the bank 209 is heated to a normal photoresist post-baking temperature of a predetermined temperature, for example, about 100 to 150 ° C. (eg, 130 ° C.), and UV light having a wavelength of about 254 nm is applied to the bank 209 from the light irradiation unit 303. Irradiate light L for several minutes. As a result, the water dissolved in the bank 209 is dehydrated and the crosslinking reaction is accelerated by the UV light. In addition, since the bank 209 is not affected by oxygen or moisture, the crosslinking reaction proceeds and becomes dense, and the heat resistance and chemical resistance are improved.

  Furthermore, the hardening process of the bank 209 may be a heat treatment for heating the bank 209 to a post-bake temperature or higher as necessary. This heat treatment is performed, for example, at a temperature of 300 ° C. to 450 ° C. for about 10 minutes. As a result, the bank 209 having excellent heat resistance and chemical resistance can be obtained, and various liquid film forming materials can be used. The ultraviolet irradiation atmosphere may be, for example, an atmosphere (for example, a nitrogen atmosphere) substantially free of oxygen and moisture other than the reduced pressure state.

After that, using the atmospheric pressure plasma apparatus 300 shown in FIG. 6B, the surface of the bank 209 is subjected to fluorination treatment to impart liquid repellency to the liquid material M on the bank 209 surface. Specifically, as shown in FIG. 2B, a liquid repellent group 51 is formed on the surface of the bank 209 by fluorination treatment.
The atmospheric pressure plasma apparatus 300 of this structural example includes a first electrode 301, a dielectric 302, and a second electrode 303A. A plasma discharge region 305 is formed between the second electrodes 303A. The mixed gas of the carrier gas and the reactive gas supplied from the gas supply unit 304 is supplied to the plasma discharge region 305 through a flow path provided through the first electrode 301 and the dielectric 302. The first electrode 301 is connected to a high-frequency AC power source 306, and the second electrode 303A and the high-frequency AC power source 306 are grounded. When a voltage is applied between the first electrode 301 and the second electrode 303A by the high-frequency AC power source 306, plasma can be generated in the plasma discharge region 305 provided on the substrate 20 side.

In the atmospheric pressure plasma device 300, for example, using He as a carrier gas, by using CF ₄ as the reaction gas, the CF ₄ plasma, the surface of the bank 209 may be subjected to fluorination treatment by CF ₄ plasma. As a result, as shown in FIG. 2B, the liquid repellent group 51 is formed on the surface of the bank 209, and the bank 209 having the liquid repellent property on the surface is obtained.
The liquid repellent group 51 can also be obtained by depositing a liquid repellent material on the bank 209 by vapor deposition or spin coating. Examples of the material capable of forming the liquid repellent group 51 include a liquid repellent material made of a fluorine-containing compound or a silicon compound, specifically, polytetrafluoroethylene (PTFE), an ethylene-tetrafluoroethylene copolymer, or the like. Fluorine-containing compounds such as fluorine-containing resins, fluorine-containing surfactants (hydrocarbon surfactants in which the hydrogen atoms of the hydrophobic group are completely or partially substituted with fluorine atoms), alkyl-based silane coupling agents (general Formula: Y—SiX ₃ [wherein Y: general organic functional groups, especially alkyl groups CH ₃ — (CH ₂ ) _n —, X: hydrolyzable groups (—OR, —Cl, —NR ₂ etc.)], Examples of silicon compounds such as fluorine silane coupling agents (substances in which the hydrogen atoms of the organic functional group forming the silane coupling agent are wholly or partially substituted with fluorine atoms). it can.

  In the case of forming a liquid repellent film on the surface of the bank 209, after forming the liquid repellent film over the entire surface region of the substrate 20 including the bank 209, the liquid repellent in regions other than the bank 209 is performed by dry etching processing through an etching mask. By selectively removing the film, the bank 209 having liquid repellency as described above can be formed. If a material containing a fluorine compound or the like is used as a constituent material of the bank 209, the bank 209 having liquid repellency can be formed without performing the liquid repellency treatment.

<Liquid material arrangement process ST2>
Next, the process proceeds to the liquid material arrangement step ST2 shown in FIG.
In the liquid material arranging step ST2, the liquid material M is selectively injected into the opening 49 and the contact hole 40.
On the surface of the bank 209, a liquid repellent group 51 has already been formed as indicated by a broken line. The liquid repellent group 51 has a function of repelling the liquid material M. As the liquid material M, a liquid material having a metal colloid as a solute, a liquid material having an organic metal compound as a solute, or a liquid material having an inorganic metal compound as a solute can be used. Note that the conductive film of the semiconductor device is usually formed of a metal material as in the present embodiment, but may be formed of a conductive organic material in some cases.
As the metal colloid, for example, Au, Ag, ITO (Indium Tin Oxide), Cu, or the like can be used. As the liquid material M, for example, when an ITO fine particle dispersion based on water is used, it is preferable to use an ITO fine particle having a primary particle size of about 5 nm to 100 nm.

  Such a liquid material M can be injected into the opening 49 and the contact hole 40 using, for example, a liquid material filling apparatus 400 as shown in FIG. The liquid material filling apparatus 400 includes a nozzle 401 having a liquid material flow path therein, a liquid supply unit 402 that supplies the liquid material to the flow path of the nozzle 401, a movement operation of the nozzle 401, and a liquid material M supply operation. And a drive unit 403 for controlling the above. Under such a configuration, the liquid material filling apparatus 400 supplies the liquid material M into the contact hole 40 as follows.

The substrate 20 of FIG. 7 is mounted on a stage 404, and the opening 49 of the bank 209 and the contact hole 40 of the insulating film 208 are fixed downward (Z1 direction in the drawing). The nozzle 401 receives the supply of the liquid material M from the liquid supply unit 402, and the liquid material M is supplied to the bank 209 side. When the nozzle 401 is moved in the X1 direction as shown in FIG. 7 while the liquid material M at the tip of the nozzle 401 is in contact with the bank 209, the liquid material M is opened through the opening 49 as shown in FIG. 49 and the contact hole 40 are filled. In this case, since the liquid repellent group 51 is formed on the surface of the bank 209, when the liquid material M is applied to the surface of the bank 209 (on the liquid repellent group 51), the liquid repellent phenomenon occurs immediately. Thus, the liquid material M is selectively filled only into the opening 49.
As other coating methods, methods such as a slit coater and a spin coater may be used.

<Drying process ST3>
Next, the process proceeds to the drying step ST3 shown in FIG.
In the drying step ST3, the liquid material M supplied into the openings 49 and the contact holes 40 in the liquid material arranging step ST2 shown in FIG. In order to perform this drying and baking treatment, for example, a drying and baking apparatus 500 of FIG. 9 is used. The drying and firing apparatus 500 includes a chamber 501 and a heater 502. The heater 502 generates heat by supplying power from the power source 503 and heats the substrate 20 placed on the table 504. In the drying and firing apparatus 500, a lamp heater 553 is disposed on the substrate mounting side of the table 504 so that the substrate 20 can also be heated from the bank 209 side.

When the drying and firing apparatus 500 is operated, the solvent in the liquid material M is evaporated by the heat supplied from the heater 502 and then fired. As a result, the solid second conductive film 30 is formed on the insulating film 208 inside the opening 49, and a part of the second conductive film 30 is buried in the contact hole 40 at the bottom of the contact hole 40. It comes into contact with the first conductive film 21.
In this case, it is desirable that the heating temperature when the liquid material M is dried and fired is equal to or lower than the temperature when the bank 209 is thermally cured as described above. In this way, by setting the drying and firing temperature to be equal to or lower than the curing temperature, it is possible to prevent deterioration of the curing performance of the bank 209.
As drying temperature, it is 100 to 150 degreeC, for example, and processing time (drying time) is about 5 minutes. The firing temperature is, for example, 300 ° C. to 400 ° C., and the firing time is about 10 minutes.

  As shown in FIG. 9, the second conductive film 30 obtained by drying and baking the liquid material M has a bottom wall in contact with the first conductive film 21 exposed on the bottom surface of the contact hole inside the contact hole 40. 30A and a side wall portion 30B that contacts the side wall surface of the contact hole 40, and a conductive film portion 30C formed on the insulating film surface 208A continuously with the side wall portion 30B. . That is, the conductive film portion 30C constitutes a main conductive member in the wiring layer on the insulating film 208, and the side wall portion 30B and the bottom wall portion 30A formed in the contact hole 40 are electrically connected to the first conductive film 21. Is configured.

<Mask material removal step ST4>
Next, the mask material removing step ST4 shown in FIG. This mask material removing step ST4 is a step of removing the bank 209, which is a mask material, from the insulating film 208 as shown in FIG.
In this case, for example, a mask material removing apparatus 600 as shown in FIG. 10 can be used. This removal apparatus 600 has a structure similar to that of the atmospheric pressure plasma apparatus 300 shown in FIG. That is, power is supplied between the first electrode 301 and the second electrode 303A to generate plasma in the plasma discharge region 305.
When used in this step, the gas supplied from the gas supply unit 304 shown in FIG. 10 to the plasma discharge region 305 is a mixed gas using He as the carrier gas and O ₂ as the reaction gas.

Using the removal apparatus 600, a mixed gas of a carrier gas and a reactive gas is supplied from the gas supply unit 304 to the plasma discharge region 305, and the substrate 20 is exposed to the generated plasma, whereby a mask is formed by O ₂ plasma and organic peeling. The material bank 209 is completely removed from the surface of the insulating film 208.
In the mask material removal step ST4 in FIG. 2E, when removing the bank 209 in FIG. 2D, it is performed by, for example, O ₂ plasma, O ₃ , lift-off, or the like which is a normal resist stripper. Can do. Alternatively, even if the bank 209 is removed by irradiation with various lasers such as ultraviolet rays, Ne—He laser, Ar laser, CO ₂ laser, ruby laser, semiconductor laser, YAG laser, glass laser, YVO ₄ laser, and excimer laser. Good.

Next, FIG. 11 is a schematic configuration diagram showing an arrangement example of the semiconductor device manufacturing apparatus of the present invention. The semiconductor device manufacturing apparatus 700 includes a spin coater 200, an insulating film forming apparatus 295 shown in FIG. 5, a UV irradiation apparatus 250 and an atmospheric pressure plasma apparatus 300 shown in FIG. 6, a liquid material filling apparatus 400 shown in FIG. A drying baking apparatus 500 and a mask material removing apparatus 600 shown in FIG. 10 are provided. These spin coater 200 to removal device 600 are arranged, for example, connected in series via a transfer device 710, for example.
In the manufacturing apparatus 700 having such a configuration, the insulating film forming apparatus 295 is an apparatus used in the previous insulating film forming step ST0. That is, the insulating film forming apparatus 295 includes an insulating film drying and baking apparatus and a mask material removing apparatus, and a liquid insulating material is applied onto the substrate 20 on which the mask pillar 204 is erected by the spin coater 200. Thereafter, the liquid insulating material is dried and baked by a drying and baking apparatus provided in the forming apparatus 295 to form the insulating film 208. Thereafter, the mask pillar 204 is removed by a mask material removing device provided in the apparatus, and an insulating film 208 having the contact hole 40 is formed.
However, the present invention is not limited to this, and the semiconductor device manufacturing apparatus 700 is not limited to the serial arrangement of the elements, and may employ other arrangement methods.

  As described above, according to the present invention, the liquid material M for forming the second conductive film can be reliably disposed and filled only in the opening 49 including the contact hole 40 that is the through-connection hole. . That is, the liquid material M can be selectively disposed on the substrate 20 by the bank 209 formed with the opening 49 on the insulating film 208 and the liquid repellent group 51 formed on the surface thereof. The use efficiency of the liquid material M can be drastically improved as compared with the case where it is applied to the entire surface of the substrate, and the manufacturing cost can be reduced.

  In the present invention, since a liquid phase process is used in forming the insulating film 208 and the second conductive film 30, an expensive vacuum device is not necessary. Furthermore, when the liquid material is applied, since the fluidity of the liquid material is good, it is possible to reliably fill the liquid material into the contact hole with a high aspect ratio, and the resulting conductive film is also excellently attached. Therefore, there is no need for high temperature treatment for improving the contact of the conductive film. Therefore, according to the present invention, deterioration of the insulating film and the second conductive film and generation of voids due to heating can be prevented, and a semiconductor device having excellent reliability can be manufactured. In addition, since operations such as etching are not required, it is possible to simplify and reduce complicated processes, which contributes to a reduction in equipment costs.

  By the way, the present invention is not limited to the above embodiment. In the above-described embodiment, the semiconductor device shown in FIG. 4 is given as an example of the semiconductor device that can be manufactured by the method for manufacturing a semiconductor device of the present invention. The method for manufacturing a semiconductor device according to the present invention can also be suitably used for manufacturing an electroluminescent display device.

As the material of the bank 209 shown in FIG. 1, it is desirable to use a photosensitive organic material. Thus, there exists a merit that it can be hardened by light irradiation by using a photosensitive organic material. As the photosensitive organic material, for example, a photoresist, a photosensitive polyimide, or the like can be used.
As described above, the insulating film 208 and the bank 209 can be formed of a photosensitive organic material. However, the photosensitive organic material can contain fluorine. By containing fluorine in this way, the photosensitive organic material itself has liquid repellency. This eliminates the need for a separate liquid repellent treatment and contributes to an improvement in manufacturing efficiency. Further, although the liquid repellent group 51 is formed on the surface of the bank 209, as described above, the bank 209 is irradiated with, for example, ultraviolet rays in a vacuum state and subjected to a curing process, whereby the heat resistance and the bank 209 are improved. Chemical resistance can be improved. By using such a method to improve the heat resistance and chemical resistance of the bank 209, the shape of the bank 209 can be prevented from collapsing in the drying step shown in FIG.

As for the formation of the insulating film 208 and the bank 209 described above, the formation material is preferably formed by a simple liquid phase method such as a spin coating method, but a pattern can also be formed by a photolithography method. . As a method for forming the bank 209 by applying it on the insulating film 208, for example, an inkjet (IJ) method, a slit coating method, a printing method, or a spin coating method can be employed. In the mask material removal step ST4 in FIG. 2E, when removing the bank 209 in FIG. 2D, it is performed by, for example, O ₂ plasma, O ₃ , lift-off, or the like which is a normal resist stripper. Can do.

In addition, a liquid repellent group 51 is formed on the bank 209 by a liquid repellent treatment. In the case of forming the liquid repellent group 51, in addition to a method of forming with CF ₄ plasma by an atmospheric pressure plasma apparatus, the liquid repellent group 51 is formed. You may form by apply | coating a liquid material. In this case, the liquid repellent group 51 can also be obtained by applying a silane coupling material or a fluorine-based silane coupling material by spin coating or vapor deposition.

  In addition, a photosensitive organic material can be used as the material of the insulating film 208 in FIG. If a photosensitive organic material is used, the insulating film 208 can be easily formed by applying a liquid material, and the contact hole 40 can be formed by directly exposing and developing the photosensitive organic material. As the photosensitive organic material, for example, a photosensitive low-k agent can be employed.

In addition, there are two methods for patterning the insulating film 208 having the contact hole 40: a liquid phase process and a gas phase process. In the manufacturing apparatus 700 shown in FIG. 11, the spin coater 200 and the insulating film forming apparatus 295 are examples of liquid phase processes for forming the insulating film 208 using a liquid insulating material. As described above, after patterning the mask pillar 204, the mask pillar 204 is subjected to a polymerization / thermosetting process and a liquid repellent process, and a liquid insulating material is applied to a region on the substrate 20 other than the mask pillar 204. Then, the insulating film 208 having the contact hole 40 is formed through a process of drying and baking and then peeling the mask pillar 204.
On the other hand, in the case of a vapor phase process instead of a liquid phase process, a step of forming an insulating film by a vapor phase growth method, a step of forming a resist mask on the insulating film, and the resist mask An insulating film having the previous contact hole is formed through a process of partially removing the insulating film by dry etching or wet etching to open a contact hole and a process of removing the resist mask.

The present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the claims.
A part of each configuration of the above embodiment can be omitted, or can be arbitrarily combined so as to be different from the above.

<Electronic device and manufacturing method thereof>
Next, a liquid crystal panel as an electronic device obtained by applying the semiconductor device manufacturing method of the present invention as described above, and a manufacturing method of this liquid crystal panel (a method of forming a TFT (thin film transistor) constituting the liquid crystal panel) explain.

[Configuration of LCD panel (electronic device)]
12 is a schematic longitudinal sectional view of a liquid crystal panel which is an embodiment of the electronic device according to the present invention, and FIG. 13 is an enlarged sectional view of the vicinity of the thin film transistor of the liquid crystal panel shown in FIG.
As shown in FIG. 12, a liquid crystal panel (TFT liquid crystal panel) 1100 includes a TFT substrate (liquid crystal driving substrate) 120 and a counter substrate 140 for a liquid crystal panel disposed opposite thereto. An alignment film 121 is formed on one surface side of the TFT substrate 120, and an alignment film 141 is formed on one surface side of the counter substrate for liquid crystal panel 140. Between the alignment film 121 and the alignment film 141, these substrates are formed. A liquid crystal layer 160 made of liquid crystal sealed between 120 and 140 is provided. A polarizing film 122 is provided on the outer surface side (the surface opposite to the liquid crystal layer 160) of the TFT substrate (liquid crystal driving substrate) 120, and on the outer surface side (the surface opposite to the liquid crystal layer 160) of the counter substrate for liquid crystal panel 140. A polarizing film 142 is provided.

  The liquid crystal layer 160 is mainly composed of liquid crystal molecules. As the liquid crystal molecules constituting the liquid crystal layer 160, any liquid crystal molecules may be used as long as they can be aligned, such as nematic liquid crystals and smectic liquid crystals. In the case of a TN type liquid crystal panel, those that form nematic liquid crystals. Preferably, for example, phenylcyclohexane derivative liquid crystal, biphenyl derivative liquid crystal, biphenylcyclohexane derivative liquid crystal, terphenyl derivative liquid crystal, phenyl ether derivative liquid crystal, phenyl ester derivative liquid crystal, bicyclohexane derivative liquid crystal, azomethine derivative liquid crystal, azoxy derivative liquid crystal, pyrimidine derivative liquid crystal, A dioxane derivative liquid crystal, a cubane derivative liquid crystal, etc. are mentioned. Furthermore, liquid crystal molecules in which a fluorine-based substituent such as a monofluoro group, a difluoro group, a trifluoro group, a trifluoromethyl group, a trifluoromethoxy group, or a difluoromethoxy group is introduced into these nematic liquid crystal molecules are also included.

  Alignment films 121 and 141 are provided on both sides of the liquid crystal layer 160. These alignment films 121 and 141 have a function of regulating the alignment state (when no voltage is applied) of the liquid crystal molecules constituting the liquid crystal layer 160. The alignment films 121 and 141 are usually composed mainly of a polymer material such as polyimide resin, polyamideimide resin, polyvinyl alcohol, polytetrafluoroethylene. Among the polymer materials, polyimide resin and polyamideimide resin are particularly preferable. If the alignment films 121 and 141 are mainly composed of a polyimide resin or a polyamide-imide resin, a polymer film can be easily formed in the production process, and has excellent characteristics such as heat resistance and chemical resistance. It will be a thing.

In addition, as the alignment films 121 and 141, a film made of the above-described material is usually subjected to a treatment for providing an alignment function for regulating the alignment of liquid crystal molecules constituting the liquid crystal layer 160. Is used. Examples of the treatment method for imparting the alignment function include a rubbing method and a photo-alignment method.
The rubbing method is a method of rubbing (rubbing) the surface of the film in a certain direction using a roller or the like. By performing such treatment, the film has anisotropy in the rubbed direction, and the alignment direction of liquid crystal molecules constituting the liquid crystal layer can be regulated.
The photo-alignment method is a method of selectively reacting only molecules in a specific direction among polymers constituting the film by irradiating light such as linearly polarized ultraviolet light near the surface of the film. By performing such treatment, the film has anisotropy, and the alignment direction of the liquid crystal molecules constituting the liquid crystal layer can be regulated.

  The alignment treatment as described above is usually performed on the surface of the electrode (transparent conductive film 144, pixel electrode 123) formed on the substrate (a joined body of the microlens substrate 150 and the black matrix 143, the TFT substrate 120). After the film composed of the material is formed, the film is applied to the film. As a method for forming a film on the electrode, for example, various coating methods such as dipping, doctor blade, spin coating, brush coating, spray coating, electrostatic coating, electrodeposition coating, roll coater, thermal spraying method, electrolytic plating, immersion plating , Wet plating methods such as electroless plating, chemical vapor deposition (CVD) such as vacuum deposition, sputtering, thermal CVD, plasma CVD, and laser CVD, dry plating methods such as ion plating, etc. Is preferred. By using the spin coating method, a film having a uniform and uniform thickness can be easily and reliably formed.

  Such an alignment film preferably has an average thickness of 20 to 120 nm, more preferably 30 to 80 nm. If the average thickness of the alignment film is less than the lower limit, it may be difficult to impart a sufficient alignment function to the alignment film. On the other hand, when the average thickness of the alignment film exceeds the above upper limit value, the driving voltage becomes high and the power consumption may increase.

The liquid crystal panel counter substrate 140 is provided on the microlens substrate 150, the surface layer 151 of the microlens substrate 150, the black matrix 143 in which the openings 152 are formed, and the black matrix 143 on the surface layer 151 so as to cover the black matrix 143. Transparent electrode (common electrode) 144.
The microlens substrate 150 includes a substrate 154 with a microlens recess provided with a plurality of (many) recesses (microlens recesses) 153 having a concave curved surface, and a recess 153 of the substrate 154 with a microlens recess. And a surface layer 151 joined via a resin layer (adhesive layer) 155. In the resin layer 155, a microlens 156 is formed of a resin filled in the recess 153. .

The microlens recessed substrate 154 is manufactured from a flat base material (transparent substrate), and a plurality of (many) recesses 153 are formed on the surface thereof. The recess 153 can be formed by, for example, a dry etching method or a wet etching method using a mask.
The substrate 154 with concave portions for microlenses is made of, for example, glass such as quartz glass, or a plastic material such as polyethylene terephthalate.

The thermal expansion coefficient of the base material is preferably substantially the same as the thermal expansion coefficient of the glass substrate 124 described later (for example, the ratio of the thermal expansion coefficients of the two is about 1/10 to 10). As a result, in the obtained liquid crystal panel, warpage, deflection, peeling, and the like caused by differences in the thermal expansion coefficients of the two when the temperature changes are prevented.
From such a viewpoint, it is preferable that the substrate 154 with a concave portion for microlenses and the glass substrate 124 be made of the same kind of material. This effectively prevents warping, bending, peeling, and the like due to differences in thermal expansion coefficients during temperature changes.

  In particular, when the microlens substrate 150 is used for a high-temperature polysilicon TFT liquid crystal panel (HTPS), the substrate 154 with a microlens recess is preferably made of quartz glass. The TFT liquid crystal panel has a TFT substrate as a liquid crystal driving substrate. For such a TFT substrate, quartz glass whose characteristics are unlikely to change depending on the environment during manufacture is suitably used. For this reason, by forming the microlens concave substrate 154 with quartz glass correspondingly, it is possible to obtain a TFT liquid crystal panel excellent in stability, which is less likely to be warped or bent.

A resin layer (adhesive layer) 155 that covers the recess 53 is provided on the upper surface of the substrate 154 with recesses for microlenses. The concave portion 153 is filled with a material for forming the resin layer 155 to form a microlens 156.
The resin layer 155 can be formed of, for example, a resin (adhesive) having a higher refractive index than that of the material for forming the microlens concave substrate 154. For example, an acrylic resin, an epoxy resin, or an acrylic epoxy resin It can form suitably with such an ultraviolet curable resin.

A flat surface layer 151 is provided on the upper surface of the resin layer 155.
The surface layer (glass layer) 151 can be made of glass, for example. In this case, it is preferable that the thermal expansion coefficient of the surface layer 151 is substantially equal to the thermal expansion coefficient of the substrate with concave portions for microlenses 154 (for example, the ratio of both thermal expansion coefficients is about 1/10 to 10). This prevents warping, bending, peeling, and the like caused by the difference in thermal expansion coefficient between the substrate 154 with concave portions for microlenses and the surface layer 151. Such an effect can be obtained more effectively if the substrate 154 with concave portions for microlenses and the surface layer 151 are made of the same material.

When the microlens substrate 150 is used in a liquid crystal panel, the thickness of the surface layer 151 is usually about 5 to 1000 μm, more preferably about 10 to 150 μm from the viewpoint of obtaining necessary optical characteristics. In addition, this surface layer 151 can also be formed, for example with ceramics. Examples of ceramics include nitride ceramics such as AlN, SiN, TiN, and BN, oxide ceramics such as Al ₂ O ₃ and TiO ₂ , and carbide ceramics such as WC, TiC, ZrC, and TaC. . When the surface layer 151 is made of ceramics, the thickness of the surface layer 151 is not particularly limited, but is preferably about 20 nm to 20 μm, and more preferably about 40 nm to 1 μm. Such a surface layer 151 can be omitted if necessary.

The black matrix 143 has a light shielding function and is made of, for example, a metal such as Cr, Al, Al alloy, Ni, Zn, or Ti, a resin in which carbon, titanium, or the like is dispersed.
The transparent electrode 144 has conductivity and is made of ITO, IO, SnO ₂ , ATO, IZO, or the like.

  The TFT substrate 120 is a substrate that drives the liquid crystal of the liquid crystal layer 160, and is provided on the glass substrate 124, the base insulating film 125 provided on the glass substrate 124, and the base insulating film 125. And a plurality of (many) pixel electrodes 123 and a plurality of (many) thin film transistors (TFTs) 130 corresponding to the pixel electrodes 123. In FIG. 12, the description of the sealing material, wiring, and the like is omitted. The glass substrate 124 is preferably made of quartz glass for the reasons described above.

A material for forming the base insulating film 125 is not particularly limited, and for example, SiO ₂ , TEOS (ethyl silicate), polysilazane, polyimide, a Low-K material, or the like can be used. The base insulating film 125 can be formed by applying a liquid insulating material such as SOG (Spin On Glass) having a siloxane bond to the glass substrate 124, firing it, and thermally decomposing it. Thereby, it is not necessary to use an expensive vacuum device or the like, and input energy and time required for film formation can be saved. The liquid insulating material can be applied, for example, by spin coating, dip coating, liquid mist chemical deposition (LSMCD), slit coating, or the like. Also, the liquid insulating material can be applied by a quantitative discharge device such as a printer head of a so-called inkjet printer. By using this quantitative discharge device, it is possible to apply only to a desired portion, so that the material can be saved.

The pixel electrode 123 drives the liquid crystal molecules of the liquid crystal layer 160 (changes the alignment of the liquid crystal) by charging and discharging with the transparent electrode (common electrode) 144. The pixel electrode 123 is made of the same material as that of the transparent electrode 144 described above, for example.
The thin film transistor 130 is connected to a corresponding pixel electrode 123 in the vicinity. The thin film transistor 130 is connected to a control circuit (not shown) and controls a current supplied to the pixel electrode 123. Thereby, charging / discharging of the pixel electrode 123 is controlled.

  As shown in FIG. 13, the thin film transistor 130 is provided on the base insulating film 125, and is provided so as to cover the semiconductor layer 131 and the semiconductor layer 131 including the channel region 131 a, the source region 131 b, and the drain region 131 c. A gate insulating film 132, an insulating layer 133, a gate electrode 134 provided so as to face the channel region 131a with the gate insulating film 132 interposed therebetween, and conductive films 138a to 138a provided on the insulating layer 133 above the gate electrode 134 138c.

  The conductive film 138b is provided over the insulating layer 133 above the source region 131b and is connected to the source region 131b through the contact hole 139b to function as a source electrode. The conductive film 138c is provided over the insulating layer 133 above the drain region 131c and is connected to the drain region 131c through the contact hole 139c to function as a drain electrode. The conductive film 138a is connected to the gate electrode 134 through the contact hole 139a. Therefore, the gate electrode 134, the source region 131b, and the drain region 131c correspond to the first conductive film according to the present invention, and the conductive films 138a to 138c electrically connected to these via the contact holes 139a to 139c are provided. This corresponds to the second conductive film according to the present invention.

  In this embodiment, the semiconductor layer 131 is provided on the base insulating film 125. The semiconductor layer 131 is made of a semiconductor material such as silicon such as polycrystalline silicon or amorphous silicon, germanium, or gallium arsenide. In the semiconductor layer 131, a channel region 31a, a source region 31b, and a drain region 31c are formed. As shown in FIG. 13, in the semiconductor layer 131, a source region 131a is formed on one side of the channel region 131a, and a drain region 131c is formed on the other side of the channel region 131a.

  The channel region 131a is made of, for example, an intrinsic semiconductor material. The source region 131b and the drain region 131c are formed of a semiconductor material into which an n-type impurity such as phosphorus is introduced (doped). Note that the semiconductor layer 131 is not limited to such a structure, and for example, the source region 131b and the drain region 131c may be formed of a semiconductor material into which a p-type impurity is introduced. The channel region 131a may be formed of a semiconductor material into which a p-type or n-type impurity is introduced, for example.

Such a semiconductor layer 131 is covered with an insulating film (gate insulating film 132, insulating layer 133). In such an insulating film, in the layer thickness direction, a portion interposed between the channel region 131a and the conductive film 138a is a gate insulating film serving as a path for an electric field generated between the channel region 131a and the conductive film 138a. Acts as a layer.
The formation material of the gate insulating film 132 and the insulating layer 133 is not particularly limited. For example, a silicon compound such as SiO ₂ , TEOS (ethyl silicate), polysilazane, or the like is used. Can also be used.
A conductive film 138a, a conductive film 138b, and a conductive film 138c are partially provided over the insulating layer 133.

A contact hole 139a communicating with the gate electrode 134 is formed in a region of the insulating layer 133 where the gate electrode 134 is formed, and the conductive film 138a is partially buried in the contact hole 139a to be gate electrode. 134 is electrically connected.
Further, a contact hole 139b communicating with the source region 131b is formed in a region where the source region 131b of the gate insulating film 132 and the insulating layer 133 is formed, and the conductive film 138b is partially formed in the contact hole 139b. Embedded in and electrically connected to the source region 131b. Similarly, a contact hole 139c communicating with the drain region 131c is formed in a region where the drain region 131c of the gate insulating film 132 and the insulating layer 133 is formed, and the conductive film 138c is formed in the contact hole 139c. It is partially embedded and electrically connected to the drain region 131c.
The conductive films 138a to 138c partially embedded in the contact holes 139a, 139b, and 139c are formed by applying the semiconductor device manufacturing method according to the present invention, as will be described later.

In the liquid crystal panel 1100 of the present embodiment, the conductive film 138 c is electrically connected to the pixel electrode 123. The conductive films 138b are electrically connected to each other at a portion not shown. Furthermore, the conductive film 138a can be connected to other circuits in parallel.
The conductive film 138b, the conductive film 138c, and the conductive film 138a are made of a conductive material such as ITO, IO, SnO ₂ , ATO, IZO, Al, Al alloy, Cr, Mo, or Ta. Note that a passivation film (not shown) formed of a material such as SiO ₂ or SiN is formed on these conductive films as necessary.

As shown in FIG. 12, a polarizing film (polarizing plate, polarizing film) 122 is arranged on the outer surface side of the TFT substrate (liquid crystal driving substrate) 120 (the surface opposite to the surface facing the alignment film 121). Has been. Similarly, a polarizing film (polarizing plate, polarizing film) 142 is disposed on the outer surface side of the counter substrate for liquid crystal panel 140 (the surface opposite to the surface facing the alignment film 141).
As a material for forming the polarizing films 122 and 142, for example, polyvinyl alcohol (PVA) or a material doped with iodine is used.

As a polarizing film, what extended | stretched the film comprised with the said material to the uniaxial direction can be used, for example. By arranging such polarizing films 122 and 142, it is possible to more reliably control the light transmittance by adjusting the energization amount. The direction of the polarization axis of the polarizing films 122 and 142 is usually determined according to the alignment direction of the alignment films 121 and 141.
In such a liquid crystal panel 1100, normally, one micro lens 156, one opening 152 of the black matrix 143 corresponding to the optical axis Q of the micro lens 156, one pixel electrode 123, and this pixel One thin film transistor 130 connected to the electrode 123 corresponds to one pixel.

  Incident light incident from the counter substrate 140 side for the liquid crystal panel passes through the substrate 154 with concave portions for microlenses and is condensed when passing through the microlenses 156, and the openings 152 of the resin layer 155, the surface layer 151, and the black matrix 143 are collected. The transparent electrode 144, the liquid crystal layer 160, the pixel electrode 123, and the glass substrate 124 are transmitted. At this time, since the polarizing film 142 is provided on the incident side of the microlens substrate 150, the incident light is linearly polarized when the incident light passes through the liquid crystal layer 160. At this time, the polarization direction of the incident light is controlled in accordance with the alignment state of the liquid crystal molecules of the liquid crystal layer 160. Therefore, the incident light transmitted through the liquid crystal panel 1100 is transmitted through the polarizing film 122, whereby the luminance of the emitted light can be controlled.

  Thus, the liquid crystal panel 1100 has the microlens 156, and the incident light that has passed through the microlens 156 is collected and passes through the openings 152 of the black matrix 143. On the other hand, the incident light is shielded in a portion where the opening 152 of the black matrix 143 is not formed. Therefore, in the liquid crystal panel 1100, unnecessary light is prevented from leaking from portions other than the pixels, and attenuation of incident light at the pixel portions is also suppressed. Therefore, the liquid crystal panel 1100 has high light transmittance in the pixel portion.

  In this liquid crystal panel 1100, alignment films 121 and 141 are bonded to a TFT substrate 120 manufactured by a method described later and a counter substrate for liquid crystal panel 140, respectively, followed by a sealant (not shown). It can be manufactured by joining the two, and then injecting liquid crystal into the gap from a gap hole (not shown) formed thereby, and then closing the hole.

[Method of manufacturing liquid crystal panel (electronic device)]
Next, an example of a method for manufacturing the thin film transistor 130 to which the method for manufacturing a semiconductor device according to the present invention is applied will be described with reference to FIGS. In the following description, the upper side of FIGS. 14 to 17 is described as “upper”, and the lower side of FIGS. 14 to 17 is referred to as “lower”.
First, a semiconductor layer (polycrystalline silicon film) 131 is formed on the base insulating film 125 as follows. A liquid repellent film such as a fluororesin film is formed on the base insulating film 125. Then, the element forming region of the liquid repellent film is irradiated with ultraviolet rays and the like, and the liquid repellent film in the element forming region is decomposed and removed for patterning, and a mask (pattern shape control mask) 170 is formed as shown in FIG. Form.

  Next, liquid silicon hydride (liquid material for film formation) is applied to the element formation region and dried, and the dried silicon hydride film is baked and pyrolyzed, as shown in FIG. Thus, an amorphous silicon film 131d is formed between the masks 170 and 170. Next, the mask (liquid repellent bank) 170 is decomposed by irradiating the entire glass substrate 124 with ultraviolet rays or the like, and after removing the mask 170 as shown in FIG. 14C, an excimer such as XeCl is applied to the amorphous silicon film 131d. By annealing with laser irradiation, the amorphous silicon film 131d is polycrystallized to form a semiconductor layer (polycrystalline silicon film) 131.

Thereafter, channel doping of the semiconductor layer (polycrystalline silicon film) 131 is performed. That is, appropriate impurities (for example, PH ₃ ions when forming an n-type conductive layer) are implanted and diffused over the entire surface. This semiconductor layer (polycrystalline silicon film) 131 becomes the first conductive film in the present embodiment. Next, a photoresist which is a liquid organic material is applied so as to cover the semiconductor layer (polycrystalline silicon film) 131. Then, the applied photoresist is dried (prebaked) at a temperature of 70 to 90 ° C., and a resist film (mask material film) 171 is formed as shown by a two-dot chain line in FIG. The liquid organic material may be a photosensitive resin (for example, polyimide). As the liquid organic material coating method, spin coating, dip coating, LSMCD, slit coating, a coating method using a quantitative discharge device, and the like can be used as in the liquid insulating material coating method.

Next, the resist film 171 is exposed and developed by a photolithography method, and contact holes are formed on regions to be the source region 131b and the drain region 131c of the semiconductor layer (polycrystalline silicon film) 131 to be the first conductive film. The resist pattern is left only in the region. Then, the resist pattern is subjected to a liquid repellent treatment, and a mask pillar 171a for forming a contact hole is formed as shown by a solid line in FIG.
As the liquid repellent treatment, for example, a gas containing fluorine atoms such as CF ₄ is decomposed by atmospheric pressure plasma to generate active fluorine single atoms or ions, and the resist pattern is exposed to the active fluorine. it can. Note that when the resist pattern is formed of a liquid repellent photoresist containing fluorine atoms, the liquid repellent treatment is unnecessary. The mask pillar 171a thus obtained is equivalent to the coating thickness of a liquid or a dispersion containing a liquid for forming the gate insulating film 132 shown in FIG. 14E, that is, a material for forming the gate insulating film 132. Alternatively, it is formed high.

  Further, these mask pillars 171a may be subjected to a curing process as described above as necessary. For example, in this example, the glass substrate 124 on which the mask pillar 171a is formed is carried into a vacuum chamber (not shown), and the pressure in the vacuum chamber is reduced to, for example, 1333 kPa (10 Torr) or less. Then, the mask pillar 171a is heated to a predetermined temperature, for example, a normal post-baking temperature of photoresist of about 100 to 130 ° C., and the mask pillar 171a is irradiated with ultraviolet rays. Thereby, in the mask pillar 171a, the dissolved water is dehydrated and the crosslinking reaction is accelerated by the ultraviolet rays. In addition, since the mask pillar 171a is dehydrated and not affected by moisture, the cross-linking reaction proceeds and becomes dense, and heat resistance and chemical resistance are improved. Furthermore, the hardening process of the mask pillar 171a performs the heat processing which heats the mask pillar 171a more than post-baking temperature as needed. This heat treatment is performed, for example, at a temperature of 300 ° C. to 450 ° C. for about 10 minutes. As a result, it is possible to obtain a mask with extremely excellent heat resistance and chemical resistance, and various liquid film forming materials (film forming liquids) can be used.

After that, as shown in FIG. 14E, a gate insulating film 132 is formed on the semiconductor layer 131 excluding the region covered with the mask pillar 171a and on the base insulating layer 125. The gate insulating film 132 can be formed in the same manner as the formation of the base insulating film 125 using the liquid insulating material described above. As the liquid (solution or dispersion) containing the material for forming the gate insulating film 132, it is preferable to select and use a liquid having a contact angle of 90 ° or more with respect to the mask pillar 171a. By using such a liquid, the liquid surface shape of the portion in contact with the mask pillar 171a becomes appropriate, and thereby, in the formed gate insulating film 132, the portion in contact with the mask pillar 171a is sharp (acute angle). The edge portion can be prevented from being formed, and the reliability of the gate insulating film 132 can be improved.
Next, the mask pillar 171a is removed by ashing, and lower contact holes 139d and 139e formed through the gate insulating film 132 are formed as shown in FIG. As described above, the ashing of the mask pillar 171a can be performed by oxygen plasma or ozone vapor under atmospheric pressure or reduced pressure.

  Next, a liquid repellent film (not shown) is formed so as to cover the gate insulating film 132. Further, the liquid repellent film is irradiated with ultraviolet rays through a mask to form a gate electrode trench 139f at a position corresponding to the channel region 131a, thereby forming a mask (pattern shape control mask) 172 having an opening (FIG. 15). (See (b)). Then, a liquid pattern material (liquid for film formation) containing an organometallic compound as a main component is disposed in the gate electrode trench 139f, and this is heat-treated to form the gate electrode 134 as shown in FIG. . Thereafter, the mask 172 is irradiated with ultraviolet rays, decomposed and removed as shown in FIG.

  The liquid pattern material may be disposed in the gate electrode trench 139f by LSMCD, spin coating, slit coating, or the like. For example, the liquid pattern material may be disposed in the gate electrode trench 139f by a quantitative discharge device such as a printer head in an inkjet printer. It may be arranged selectively. Thereby, the liquid pattern material can be saved, the liquid pattern material can be prevented from adhering to the periphery of the trench, and the gate electrode 134 having a desired thickness can be easily formed. The gate electrode 134 forms a first conductive film together with the semiconductor layer 131 (the source region 131b and the drain region 131c).

Next, using the gate electrode 134 as a mask, an impurity (for example, B ₂ H ₆ ions when a p-type conductive layer is formed) is implanted into the source region 131b and the drain region 131c. As a result, as shown in FIG. 15E, a TFT element in which the lower portion of the gate electrode 134 is the channel region 131a is obtained. Thereafter, a resist film 173 as a mask material is formed on the gate insulating film 132 as shown in FIG.
Further, the resist film 173 is exposed and developed using a photolithography method, and as shown in FIG. 16B, positions corresponding to the lower contact holes 139d and 139e serving as contact hole forming regions, and predetermined positions on the gate electrode 134 A contact hole forming mask pillar 173a made of a resist film 173 is formed at the position. Of these mask pillars 173a, the one corresponding to the source region 131b of the semiconductor layer (polycrystalline silicon film) 131 has a lower end in contact with the upper surface of the source region 131b through the lower contact hole 139d. Similarly, in the mask pillar 73a, the one corresponding to the drain region 131c of the semiconductor layer (polycrystalline silicon film) 131 has its lower end in contact with the upper surface of the drain region 131c through the lower contact hole 139e. The mask pillar 173a is subjected to a liquid repellent process or a curing process as necessary, similarly to the mask pillar 171a.

  Further, as shown on the right side of FIG. 16B, the mask pillar 173a may be formed such that a portion above the gate insulating film 132 is larger than the lower contact hole 139e. As a result, a step is formed in the contact hole formed by removing 173a as described later (see FIG. 16D), and the step coverage of the contact hole is improved and disconnection in the contact hole is prevented. It is.

  Next, an insulating layer 133 made of silicon oxide or the like is formed on the gate insulating film 132 and the gate electrode 132 excluding the region covered with the mask pillar 173a, as shown in FIG. The insulating layer 133 can be formed by applying a liquid insulating material (film forming liquid material) by LSMCD, spin coating, slit coating, or the like, and heat-treating it, like the base insulating film 125 and the like. Thereby, the surface of the insulating layer 133 to be formed can be made flatter. As the liquid insulating material, a liquid insulating material having a contact angle of 90 ° or more with respect to the mask pillar 173a is selected and used as in the case of the liquid containing the material for forming the gate insulating film 132 described above. It is preferable. By using such a liquid material, the same effect as that of the gate insulating film 132 can be obtained for the insulating layer 133.

  Thereafter, the mask pillar 173a is removed by ashing, and an upper contact hole (not shown) is formed in the insulating layer 133 as shown in FIG. Accordingly, an upper contact hole communicates with the lower contact hole 139d to become a contact hole 139b, and an upper contact hole communicates with the lower contact hole 139e to become a contact hole 139c. Further, the upper contact hole leading to the gate electrode 134 becomes a contact hole 139a.

Next, as shown in FIG. 17A, a photoresist is applied so as to cover the insulating layer 133, and a resist film 178 which is a mask material is formed. Further, the resist film 178 is exposed and developed using photolithography, and openings 178a, 178b, and 178c are formed in the resist film 173 in the regions including the contact holes 139a, 139b, and 139c as shown in FIG. To do. As shown in the figure, the contact hole 139a and the opening 178a are integrally formed on the substrate 124, and the contact holes 139b and 139c and the openings 178b and 178c are the same.
The resist film 178 is subjected to a liquid repellent process or a curing process as required in the same manner as the mask pillars 171a and 173a.

Next, a conductive liquid material containing an organometallic compound as a main component is supplied into the openings 178a, 178b, and 178c using a quantitative discharge device (not shown). Thereafter, the conductive liquid material filled in the openings 178a to 178c and the contact holes 139a to 139c is fired and solidified. As a result, as shown in FIG. 17C, the conductive film 138b conductively connected to the source region 131b via the portion buried in the contact hole 139b, and the drain region 131c via the portion buried in the contact hole 139c. A conductive film 138c that is conductively connected to the channel region 131a and a conductive film 138a that is conductively connected to the channel region 131a through a portion embedded in the contact hole 139a are formed. Note that the conductive film 138c is connected to the pixel electrode 123 outside the illustrated range.
Thereafter, a passivation film (not shown) made of silicon oxide, silicon nitride (SiN), or the like is formed so as to cover the conductive films 138a to 138c.

  Thereafter, as shown in FIG. 17D, the resist film 178 is removed by ashing or laser irradiation. The specific method is similar to the ashing of the mask pillars 171a and 173a and the laser irradiation to the mask 172. In this example, since the liquid material is supplied to the opening surrounded by the resist film 178, an appropriate amount of the liquid material is accurately disposed in the openings 178a to 178c and the contact holes 139a to 139c. The obtained conductive films 138a to 138c fill the contact holes 139a to 139c and reliably contact the semiconductor layer 131 and the gate electrode 134 as shown in FIG. Therefore, according to this manufacturing method, a highly reliable electronic device can be obtained.

As described above, in this embodiment, the thin film transistor (semiconductor device) 130 is formed by applying the above-described method for manufacturing a semiconductor device according to the present invention. Accordingly, in the thin film transistor 130 obtained, the conductive films 138a to 138c that are partially buried in the contact holes 139a, 139b, and 139c and electrically connected to the lower conductive film are formed inexpensively and quickly. In addition, since the conductive connection structure has high reliability, the thin film transistor 130 itself is inexpensive and has high reliability in characteristics.
The mask pillars 171a and 173a can be the same as the mask pillar 204 in the embodiment shown in FIG.

<Electronic equipment>
Next, as an example of the electronic apparatus of the present invention, a projection display device (liquid crystal projector) using the liquid crystal panel 1100 will be described.
FIG. 18 is a schematic configuration diagram of an electronic apparatus (projection display device) according to the present invention.
As shown in FIG. 18, the projection display device 1300 includes a light source 1301, an illumination optical system including a plurality of integrator lenses, a color separation optical system (light guide optical system) including a plurality of dichroic mirrors, and the like. A liquid crystal light valve (liquid crystal light shutter array) 184 corresponding to red (liquid crystal light shutter array) 184 corresponding to red, a liquid crystal light valve (liquid crystal light shutter array) 185 corresponding to green (a liquid crystal light shutter array) 185, and a liquid crystal light valve corresponding to blue (for blue) ) A liquid crystal light valve (liquid crystal light shutter array) 186, a dichroic mirror surface 1211 reflecting only red light, a dichroic prism (color combining optical system) 181 formed with a dichroic mirror surface 1212 reflecting only blue light, and projection A lens (projection optical system) 182.

  The illumination optical system includes integrator lenses 1302 and 1303. The color separation optical system includes mirrors 1304, 1306, and 1309, a dichroic mirror 1305 that reflects blue light and green light (transmits only red light), a dichroic mirror 1307 that reflects only green light, and a dichroic that reflects only blue light. A mirror (or a mirror that reflects blue light) 1308 and condenser lenses 1310, 1311, 1312, 1313, and 1314 are included.

The liquid crystal light valve 185 includes the liquid crystal panel 1100 described above. The liquid crystal light valves 184 and 186 have the same configuration as the liquid crystal light valve 185. The liquid crystal panels 1100 provided in the liquid crystal light valves 184, 185 and 186 are connected to driving circuits (not shown).
In the projection display device 1300, the dichroic prism 181 and the projection lens 182 constitute an optical block 120. The optical block 180 and the liquid crystal light valves 184, 185 and 186 fixed to the dichroic prism 181 constitute a display unit 183.

Hereinafter, the operation of the projection display apparatus 1300 will be described.
White light (white light flux) emitted from the light source 1301 passes through the integrator lenses 1302 and 1303. The light intensity (luminance distribution) of the white light is made uniform by the integrator lenses 1302 and 1303. The white light emitted from the light source 1301 preferably has a relatively high light intensity. Thereby, the image formed on the screen 1320 can be made clearer.

The white light transmitted through the integrator lenses 1302 and 1303 is reflected to the left side in FIG. 18 by the mirror 1304, and blue light (B) and green light (G) of the reflected light are respectively reflected by the dichroic mirror 1305 in FIG. The red light (R) is reflected downward and passes through the dichroic mirror 1305.
The red light transmitted through the dichroic mirror 1305 is reflected downward in FIG. 18 by the mirror 1306, and the reflected light is shaped by the condenser lens 1310 and enters the red liquid crystal light valve 184.
Green light of blue light and green light reflected by the dichroic mirror 1305 is reflected to the left side in FIG. 18 by the dichroic mirror 1307, and the blue light passes through the dichroic mirror 1307.

The green light reflected by the dichroic mirror 1307 is shaped by the condenser lens 1311 and enters the green liquid crystal light valve 185.
Further, the blue light transmitted through the dichroic mirror 1307 is reflected by the dichroic mirror (or mirror) 1308 on the left side in FIG. 18, and the reflected light is reflected by the mirror 1309 on the upper side in FIG. The blue light is shaped by the condenser lenses 1312, 1313, and 1314, and enters the liquid crystal light valve 186 for blue.
As described above, the white light emitted from the light source 1301 is color-separated into the three primary colors of red, green, and blue by the color separation optical system, and is guided and incident on the corresponding liquid crystal light valve.

At this time, each pixel (the thin film transistor 130 and the pixel electrode 123 connected thereto) of the liquid crystal panel 1100 included in the liquid crystal light valve 184 is subjected to switching control by a driving circuit (driving means) that operates based on a red image signal. (ON / OFF), and the red light incident on the liquid crystal light valve 184 by this operation is modulated to a predetermined intensity (luminance). Similarly, green light and blue light enter liquid crystal light valves 185 and 186, respectively, and are modulated by the respective liquid crystal panels 1100, thereby forming a green image and a blue image. At this time, each pixel of the liquid crystal panel 1100 included in the liquid crystal light valve 185 is switching-controlled by a drive circuit that operates based on a green image signal, and each pixel of the liquid crystal panel 1100 included in the liquid crystal light valve 186 is used for blue color. Switching control is performed by a drive circuit that operates based on the image signal.
As a result, the red light, the green light, and the blue light are respectively modulated by the liquid crystal light valves 184, 185, and 186, and a red image, a green image, and a blue image are formed, respectively.

  The red image formed by the liquid crystal light valve 184, that is, the red light from the liquid crystal light valve 184, enters the dichroic prism 181 from the surface 1213, is reflected by the dichroic mirror surface 1211 to the left in FIG. The light passes through the surface 1212 and exits from the exit surface 1216. Further, the green image formed by the liquid crystal light valve 185, that is, the green light from the liquid crystal light valve 185, enters the dichroic prism 181 from the surface 1214, and passes through both the dichroic mirror surfaces 1211 and 1212. The light exits from the exit surface 1216. Further, the blue image formed by the liquid crystal light valve 186, that is, the blue light from the liquid crystal light valve 186, enters the dichroic prism 181 from the surface 1215, and is reflected by the dichroic mirror surface 1212 to the left in FIG. The light passes through the dichroic mirror surface 1211 and exits from the exit surface 1216.

  As described above, the light of each color from the liquid crystal light valves 184, 185 and 186, that is, the respective images formed by the liquid crystal light valves 184, 185 and 186 are synthesized by the dichroic prism 181, thereby forming a color image. Is done. This image is projected (enlarged projection) onto the screen 1320 installed at a predetermined position by the projection lens 182.

  The projection display device according to the present invention having the above-described configuration includes the liquid crystal panel 1100 of the previous embodiment in the liquid crystal light valves 184 to 186, and can be manufactured inexpensively and quickly. The projection display device is excellent in reliability in the conductive connection structure of the semiconductor element.

[Organic EL device]
Next, an organic EL device will be described as an example of a display device that can be manufactured by applying the method for manufacturing a semiconductor device according to the present invention.

(Configuration of organic EL device)
FIG. 19 is a cross-sectional configuration diagram of a main part of the organic EL device of the present embodiment, and FIGS. 20 to 22 are cross-sectional configuration diagrams illustrating the manufacturing process of the organic EL device.
An organic EL device (display device) 800 shown in FIG. 19 is mainly composed of a substrate assembly 802. The substrate assembly 802 includes a wiring substrate (first substrate) 803 and an organic EL substrate (second substrate). 804 is joined via a joint 850 described later.

The wiring substrate 803 includes a substrate 810, a wiring pattern 811 having a predetermined shape formed on the substrate 810 (first conductive film), an interlayer insulating film 816 covering the wiring pattern 811, and a metal wiring 814 on the interlayer insulating film 816. A TFT (switching element) 813 disposed above and a terminal portion 815 formed on the interlayer insulating film 816 are provided.
The metal wiring 814 (second conductive film) is conductively connected to the wiring pattern 811 by burying a part of the contact hole of the interlayer insulating film 816 (portion denoted by reference numeral 814a). Further, a terminal portion 815 that forms a second conductive film similar to the metal wiring 814 is partially conductively connected to the wiring pattern 811 by burying a part (a portion denoted by reference numeral 815 a) in the contact hole of the interlayer insulating film 816. . Under such a configuration, the TFT 813 and the terminal portion 813 are electrically connected.

  Here, the metal wiring 814 and the terminal pattern of the TFT 813 are electrically connected by a conductive paste 817 applied and formed in a region on the interlayer insulating film 816 including the metal wiring 814. The conductive paste 817 includes an anisotropic conductive paste (ACP).

  The organic EL substrate 804 includes an organic EL element (light emitting element) 821, an insulating film 822 surrounding the organic EL element 821, and a cathode formed on the organic EL element 821 and the insulating film 822 over a light-transmitting substrate 820. 825. The organic EL element 821 has a configuration in which an anode made of a transparent metal such as ITO, a hole injection / transport layer, and a light emitting layer are stacked from the substrate 820 side. In other words, the anode and the cathode 825 A functional layer such as a light emitting layer is sandwiched between them. Then, light is emitted by recombining holes supplied from the anode to the functional layer and electrons supplied from the cathode in the light emitting layer. In addition, a well-known technique can be employ | adopted for the detailed structure of such an organic EL element. Further, an electron injecting / transporting layer may be formed between the organic EL element 821 (light emitting layer) and the cathode 825.

  Furthermore, a joint portion 850 composed of a resin core portion 851 and a conductive material 852 is provided between the wiring substrate 803 and the organic EL substrate 804. The joint portion 850 is disposed at a position where the joint portion 850 contacts the terminal portion 815 of the wiring substrate 803 and the cathode 825 of the organic EL substrate 804 and electrically connects the two. In addition, a space between the substrates 803 and 804 that are opposed to each other with the joint portion 850 interposed therebetween is sealed by a sealing portion 832 that holds the substrates 803 and 804. An inert gas 831 is filled in a sealed space surrounded by the sealing portion 832 and the substrates 803 and 804.

(Method for manufacturing organic EL device)
Next, a method for manufacturing the organic EL device 800 shown in FIG. 19 will be described.

{Basic substrate manufacturing method}
First, referring to FIG. 20A, a process of forming a TFT on the base substrate 840 will be described as a pre-process for bonding and transferring the TFT 813 to the wiring substrate 803. Since a known technique including a high temperature process can be adopted as a manufacturing method of the TFT 813, the description of the manufacturing method of the TFT is omitted, and the basic substrate 840 and the peeling layer 841 are mainly described.

  The basic substrate 840 is not included in the assembled organic EL device 800, and is a member used only for the manufacturing process of the TFT 813 and the bonding and transfer processes. Specifically, a translucent heat-resistant substrate such as quartz glass that can withstand about 1000 ° C. is preferable. In addition to quartz glass, heat-resistant glass such as soda glass, Corning 7059 (trade name), and Nippon Electric Glass OA-2 (trade name) can be used.

  As the basic substrate 840, a substrate having an arbitrary thickness can be basically used, but it is preferably about 0.1 mm to 0.5 mm, and more preferably about 0.5 mm to 1.5 mm. . This is because if the thickness of the base substrate is too thin, the strength is reduced, and if it is too thick, the irradiation light is attenuated when the transmittance of the base is low in the laser irradiation process described later. However, when the transmittance of the irradiation light of the base is high, the thickness can be increased beyond the upper limit.

  The peeling layer 841 is made of a material that causes peeling (also referred to as “in-layer peeling” or “interfacial peeling”) in the layer or at the interface by irradiation light such as laser light. That is, by irradiating with a certain intensity of light, the interatomic or intermolecular bonding force in atoms or molecules constituting the constituent material disappears or decreases, causing ablation, etc., and peeling from the substrate. It is what happens. In addition, when the irradiation layer is irradiated with light, the component contained in the release layer 841 is released as a gas and separated, and when the release layer 841 absorbs light and becomes a gas, the vapor is released and separated. May lead to.

  As a material of the peeling layer 841, for example, amorphous silicon (a-Si) is adopted, and hydrogen (H) may be contained in the amorphous silicon. When hydrogen is contained, it is preferable because hydrogen is released by light irradiation and an internal pressure is generated in the peeling layer 842, which promotes peeling. In this case, the hydrogen content is preferably about 2 at% or more, more preferably 2 to 20% at%. The hydrogen content should be set appropriately for film formation conditions, such as the gas composition, gas pressure, gas atmosphere, gas flow rate, gas temperature, substrate temperature, and power to be applied when using the CVD method. Adjust by. Other release layer materials include silicon oxide or silicon compounds, nitride ceramics such as silicon nitride, aluminum nitride, and titanium nitride, organic polymer materials (those whose interatomic bonds are broken by light irradiation), metal For example, Al, Li, Ti, Mn, In, Sn, Y, La, Ce, Nd, Pr, Gd, or Sm, or an alloy containing at least one of them can be given.

  The thickness of the release layer 841 is preferably about 1 nm to 20 μm, more preferably about 10 nm to 2 μm, and still more preferably about 20 nm to 1 μm. This is because if the thickness of the release layer 841 is too thin, the uniformity of the formed film thickness is lost and unevenness occurs in the release. If the thickness of the release layer 841 is too thick, the irradiation light required for the release is removed. It may be necessary to increase the power (light quantity), and it may take a long time to remove the residue of the release layer 841 remaining after the release.

  The formation method of the peeling layer 841 should just be a method which can form the peeling layer 841 by uniform thickness, and can be suitably selected according to various conditions, such as a composition and thickness of the peeling layer 841. For example, various vapor deposition methods such as CVD (including MOCCVD, low pressure CVD, ECR-CVD), vapor deposition, molecular beam vapor deposition (MB), sputtering, ion doping, PVD, electroplating, immersion plating (dipping) ), Various plating methods such as electroless plating method, Langmuir Projet (LB) method, spin coating method, spray coating method, roll coating method and other coating methods, various printing methods, transfer methods, ink jet methods, powder jet methods Applicable to etc. Of these, two or more methods may be combined.

  In particular, when the composition of the peeling layer 841 is amorphous silicon (a-Si), it is preferable to form a film by a CVD method, particularly low-pressure CVD or plasma CVD. In the case where the release layer 841 is formed using a ceramic by a sol-gel method or is made of an organic polymer material, it is preferably formed by a coating method, particularly spin coating.

{Manufacturing method of wiring board}
In parallel with the manufacturing process of the base substrate 840 shown in FIG. 20A, the manufacturing process of the wiring board 803 shown in FIG. 20B is performed.
In the step shown in FIG. 20B, after the wiring pattern 811 and the interlayer insulating film 816 covering the wiring pattern 811 are formed on the substrate 810, the metal is so buried in the contact hole of the interlayer insulating film 816. By forming the wiring 814 and the terminal portion 815 on the interlayer insulating film 816, a conductive connection structure through the wiring pattern 811 is obtained.

  In the present embodiment, the semiconductor device manufacturing method according to the present invention is applied to the formation process of the metal wiring 814 and the terminal portion 815. That is, the formation of the metal wiring 814 and the terminal portion 815 can be performed inexpensively and quickly, and an organic EL device having a highly reliable conductive connection structure can be obtained.

  Specifically, after forming the wiring pattern 811 using a formation method such as a photolithography method, a mask pillar is erected at a position where the metal plug is formed, and then the interlayer insulating film 816 is covered with the wiring pattern 811. Form. The interlayer insulating film 816 is obtained by a liquid phase method in which a liquid insulating material such as an acrylic resin or a silicon compound is applied by a spin coating method or the like, and has a high degree of flatness by using the liquid phase method. Thereafter, when the mask pillar is removed, an interlayer insulating film 816 having a contact hole reaching the wiring pattern 811 is obtained. Alternatively, after forming the interlayer insulating film 816 over the substrate 810 including the wiring pattern 811, the contact hole may be formed by a photolithography method.

  When the interlayer insulating film 816 having the contact hole reaching the wiring pattern 811 is formed, a bank (not shown) having an opening corresponding to the region including the contact hole is formed on the surface of the interlayer insulating film 816. To do. That is, after a photosensitive resin material is applied onto the interlayer insulating film 816 by using a spin coating method, the resin film is exposed and developed to thereby form a region where the metal wiring 814 and the terminal portion 816 are formed (contact hole region). A bank made of a resin film in which a region corresponding to (including a formation region) is opened is obtained. Thereafter, the bank surface is subjected to a liquid repellent treatment as necessary.

Next, a dispersion liquid (liquid material) in which metal fine particles are dispersed in a solvent is selectively disposed in the contact hole using a droplet discharge method (inkjet method), thereby partially (814a, 815a) in the contact hole. The metal wiring 814 and the terminal portion 815 are embedded. The steps shown in FIGS. 1 and 2 in the previous embodiment are applied to the formation procedure of the metal wiring 814 and the terminal portion 815. In this case, the wiring pattern 811 corresponds to the first conductive film 21 shown in FIG. 1, and the interlayer insulating film 816 corresponds to the insulating film 208. The metal wiring 814 or the terminal portion 815 corresponds to the second conductive film 30 shown in FIG.
When the metal wiring 814 and the terminal portion 815 are formed in this way, the bank formed on the interlayer insulating film 816 is removed by ashing or the like. More specifically, when forming the metal wiring 814 and the terminal portion 815, the formation method of the conductive films 138a to 139c shown in FIG.

Note that a silicon oxide film (SiO ₂ ) or the like may be formed on the surface of the substrate 810 as a base insulating film, as in the embodiment shown in FIG. FIG. 20B illustrates the case where the wiring pattern 811 has a single layer structure, but it may be a laminated film of two layers or three layers. The wiring material is not limited to Al or Al alloy, but may be a sandwich structure in which a low resistance metal such as Al is sandwiched between Ti and Ti compounds. In this way, the barrier property and hillock resistance against the Al wiring can be improved.

Further, bumps corresponding to the terminals of the TFT 813 can be provided over the metal wiring 814 connected to the TFT 813.
In order to form bumps on the metal wiring 814, first, the substrate 810 is immersed in an aqueous solution containing hydrofluoric acid and sulfuric acid for the purpose of improving the wettability of the surface to be plated and removing the residue. Subsequently, it is immersed in a heated alkaline aqueous solution containing sodium hydroxide, and the oxide film on the surface of the metal wiring 814 is removed.
Next, the pad surface is replaced with Zn by immersing in a zincate containing zincate solution. Thereafter, it is immersed in a nitric acid aqueous solution, the Zn is peeled off, and again immersed in a zincate bath to deposit dense Zn particles on the Al surface. Next, the substrate 810 is immersed in an electroless Ni plating bath to form Ni plating. The plating height is about 2 μm to 10 μm. At this time, since the plating bath is a bath using hypophosphorous acid as a reducing agent, phosphorus (P) is co-deposited. Finally, the substrate 810 is immersed in a substitution Au plating bath to form an Au film on the Ni surface. The Au film is formed to a thickness of about 0.05 μm to 0.3 μm. It is preferable to use a cyan-free type Au bath.

Through the above steps, Ni—Au bumps can be formed on the metal wiring 814. Further, solder or Pb-free solder, for example, Sn-Ag-Cu-based solder may be formed on the Ni-Au plated bump by screen printing, dipping, or the like to form a bump. In addition, a water washing process is performed between each chemical process. The washing tank used for the washing treatment preferably has an overflow structure or a QDR mechanism and performs N ₂ bubbling from the bottom surface. In the bubbling method, a hole is made in a tetrafluoroethylene tube or the like and N ₂ is extracted, or N ₂ is extracted through a sintered body or the like. By the above steps, a sufficiently effective rinsing can be performed in a short time.

{TFT transfer process}
Next, with reference to FIGS. 20C, 20D, and 21A, a method of transferring the TFT 813 to the wiring substrate 803 by bonding the wiring substrate 803 and the base substrate 840 will be described. .
Here, a known technique can be adopted as the transfer process. In this embodiment, SUFTLA (Surface Free Technology by Laser Ablation / Annealing: registered trademark) is used.

  As shown in FIG. 20C, the base substrate 840 is inverted, and a conductive paste 817 containing anisotropic conductive particles (ACP) is interposed between the TFT 813 and the TFT connection portion 814. The base substrate 840 and the wiring substrate 803 are bonded together.

  Next, as shown in FIG. 20D, only the portion where the conductive paste 817 is applied is locally irradiated with the laser beam LA from the back surface side (the TFT non-formed surface) of the basic substrate 840. Then, the bonding of atoms and molecules in the peeling layer 841 is weakened, and the hydrogen in the peeling layer 841 is molecularized and separated from the bonding of crystals, that is, the bonding force between the TFT 813 and the base substrate 840 is completely lost, and the laser It becomes possible to easily remove the TFT of the portion irradiated with the light LA.

  Thereafter, as shown in FIG. 21A, when the basic substrate 840 and the wiring substrate 803 are separated, the TFT is detached from the basic substrate 840 and transferred to the wiring substrate 803. Thereby, the terminal of the TFT 813 is electrically connected to the wiring pattern 811 through the metal wiring 814 (or bumps formed thereon) and the conductive paste 817.

{Formation process of joint part (resin core part, conductive material)}
When the transfer of the TFT 813 is completed, a bonding portion 850 is formed on the wiring substrate 803 as shown in FIG.
In order to form the joint portion 850, first, the resin core portion 851 that is a component thereof is formed. Examples of a method for forming the resin core portion 851 include a method using a droplet discharge method (inkjet method).
This droplet discharge method is a printing technique well known for so-called inkjet printers, and discharges droplets of material inks obtained by liquefying various resin materials from an inkjet head onto a substrate and fixes them. . According to the ink jet method, since the droplets of the material ink can be accurately ejected to a fine region, the material ink can be directly fixed at a desired ejection position without performing a photolithography technique. Accordingly, no material is wasted and the manufacturing cost can be reduced, which is a very rational method.
When the resin core portion 851 is formed on the wiring substrate 803 using such an ink jet method, a dispersion liquid in which a resin material for forming the resin core portion 851 is dispersed in a solvent or the like is used as the material ink. The

  Next, the conductive material 852 is disposed after the resin core portion 851 is formed by the above-described resin core portion forming method. The conductive material 852 is a silver paste formed on the resin core portion 851 and the terminal portion 815, and the silver paste is formed by a printing method, a transfer method, a droplet discharge method, or the like. Then, the silver paste is disposed in the above-described range on the resin core portion 851 and the terminal portion 815.

{Bonding process of wiring board and organic EL board}
Next, with reference to FIGS. 22A and 22B, a process of forming the organic EL device 800 by bonding the above-described wiring board 803 and the separately prepared organic EL board 804 will be described.
An organic EL substrate 804 shown in FIG. 22A is obtained by sequentially forming an organic EL element 821, an insulating film 822, and a cathode 825 on a transparent substrate 820.

  The organic EL substrate 804 is arranged upside down in order to be attached to the wiring substrate 803. Then, the wiring substrate 803 described above is disposed at a position facing the organic EL substrate 804, and both the substrates 803 and 804 are bonded and pressed. Then, the upper surface of the conductive material 852 comes into contact with the cathode 825, and then the conductive material 852 made of silver paste is crushed by the cathode 825. Thus, as a result of the conductive contact between the terminal portion 815 and the cathode 825 via the conductive material 852, the organic EL element 821 and the TFT 813 are electrically connected. At this time, the resin core portion 851 is also crushed together with the conductive material 852 and the cathode 825 is pressed by the reaction force, so that the conductive contact between the conductive material 852 and the cathode 825 can be reliably obtained.

Next, an inert gas 831 is sealed between the wiring substrate 803 and the organic EL substrate 804, and the periphery of the substrates 803 and 804 is sealed as shown in FIG. 19, whereby the organic EL device 800 can be obtained.
As a method for enclosing the inert gas 831 and a method for sealing the substrate, a method of sealing the inert gas 831 after the wiring substrate 803 and the organic EL substrate 804 are bonded together, and an inert gas atmosphere In this chamber, there is a method in which the wiring substrate 803 and the organic EL substrate 804 are bonded and sealed.

  In the organic EL device 800 shown in FIG. 19 manufactured by the above manufacturing method, a cathode 825, a light emitting layer, a hole injection / transport layer, and an anode are arranged in this order from the wiring substrate 803 side of the organic EL substrate 804. A top emission type organic EL device that extracts light generated in the light emitting layer from the substrate 820 side is obtained.

In the above example, the TFT is transferred to the wiring substrate as an electronic element. However, as the transferable electronic element, in addition to the TFT element, a thin film diode, other thin film semiconductor devices, electrodes (for example, ITO, Transparent electrodes such as mesa films), photoelectric conversion elements used in solar cells and image sensors, switching elements, memories, actuators such as piezoelectric elements, micromirrors (piezo thin film ceramics), magnetic recording media, magneto-optical recording media, Recording media such as optical recording media, magnetic recording thin film heads, coils, inductors, thin film high magnetic permeability materials, and micro magnetic devices that combine them, filters, reflective films, dichroic mirrors, optical thin films such as polarizing elements, semiconductor thin films, ultra Conductive thin film (eg YBCO thin film), magnetic thin film, metal multilayer thin film, metal ceramic multilayer Film, a metal thin semiconductor multi-layer film, ceramic semiconductor multilayer film, a multilayer thin film of the organic thin film and other materials.
Among these, it is particularly useful to apply to a thin film device, a micro magnetic device, a configuration of a micro three-dimensional structure, an actuator, a micro mirror, and the like.

[Electronics]
The organic EL device 800 or the liquid crystal panel 1100 described above can also be applied to the following electronic devices. FIG. 23A is a perspective view showing an example of a mobile phone. Reference numeral 1600 denotes a mobile phone main body, and reference numeral 1601 denotes a display unit including the organic EL device or the liquid crystal panel of the above embodiment. FIG. 23B is a perspective view showing an example of a portable information processing apparatus such as a word processor or a personal computer. In FIG. 23B, reference numeral 1700 denotes an information processing device, 1701 denotes an input unit such as a keyboard, 1703 denotes an information processing body, and 1702 denotes a display unit including the organic EL device or the liquid crystal panel of the above embodiment. FIG. 23C is a perspective view illustrating an example of a wristwatch type electronic device. In FIG. 23C, reference numeral 1800 denotes a watch body, and reference numeral 1801 denotes a display unit including the organic EL device or the liquid crystal panel of the above embodiment.
Since each electronic device shown in FIG. 23 includes the organic EL device or the liquid crystal panel of the above embodiment, it can be manufactured inexpensively and quickly, and has excellent reliability in the conductive connection structure of the semiconductor element. It has become an electronic device.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but it goes without saying that the present invention is not limited to such examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

Sectional process drawing for demonstrating the manufacturing method of the semiconductor device which concerns on this invention. Sectional process drawing for demonstrating the manufacturing method of the semiconductor device which concerns on this invention. The flowchart in the manufacturing method of the semiconductor device which concerns on this invention. 1 is a cross-sectional configuration diagram illustrating an example of a semiconductor device according to an embodiment. The figure which shows an example of a spin coater. The figure which shows an example of UV irradiation apparatus. The figure which shows an example of a liquid material filling apparatus. Operation | movement explanatory drawing of a liquid material filling apparatus. The figure which shows an example of a drying baking apparatus. The figure which shows an example of a mask material removal apparatus. The figure which shows the example of arrangement | sequence of the manufacturing apparatus of the semiconductor device of this invention. The cross-sectional block diagram of the liquid crystal panel as an example of an electronic device. FIG. 3 is a cross-sectional configuration diagram of the thin film transistor. The manufacturing process figure of the thin-film transistor which applied the manufacturing method which concerns on this invention. The manufacturing process figure of the thin-film transistor which applied the manufacturing method which concerns on this invention. The manufacturing process figure of the thin-film transistor which applied the manufacturing method which concerns on this invention. The manufacturing process figure of the thin-film transistor which applied the manufacturing method which concerns on this invention. 1 is a schematic configuration diagram illustrating an example of an electronic device. The cross-sectional block diagram which shows the principal part of an organic electroluminescent apparatus. The cross-sectional block diagram which shows the manufacturing process of an organic electroluminescent apparatus. The cross-sectional block diagram which shows the manufacturing process of an organic electroluminescent apparatus. The cross-sectional block diagram which shows the manufacturing process of an organic electroluminescent apparatus. Schematic block diagram which shows the other example of an electronic device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Manufacturing method of semiconductor device, 20 ... Board | substrate, 21 ... 1st electrically conductive film (semiconductor layer), 30 ... 2nd electrically conductive film, 40 ... Contact hole (penetration connection hole), 49 ... Opening, 51 ... Liquid repellent group, 208 ... Insulating film, 209 ... Bank (mask material), M ... Liquid material, STO ... Insulating film forming step, ST1 .. -Mask material formation process, ST2 ... Liquid material arrangement process, ST3 ... Drying process, ST4 ... Mask material removal process

Claims (19)

A method of manufacturing a semiconductor device having a conductive connection structure formed by electrically connecting a first conductive film and a second conductive film provided via an insulating film,
Forming an insulating film on the first conductive film, and forming a contact hole penetrating the insulating film to reach the first conductive film;
A mask material forming step of forming a mask material opened in a region on the insulating film including the contact hole;
A liquid material disposing step of selectively disposing a liquid material in a region on the insulating film including the contact hole through the opening of the mask material;
A drying step of drying and solidifying the liquid material to form the second conductive film partially embedded in the contact hole. The insulating film forming step includes
Forming a mask pillar in a region on the first conductive film in which the contact hole is to be formed;
Forming an insulating film in a region excluding the mask pillar;
The method for manufacturing a semiconductor device according to claim 1, further comprising: removing the mask pillar and forming a contact hole in the insulating film.   The insulating film forming step includes an insulating material applying step for applying a liquid insulating material on the first conductive film, and an insulating material solidifying step for solidifying the applied liquid insulating material. A method for manufacturing a semiconductor device according to claim 1.   4. The method of manufacturing a semiconductor device according to claim 3, wherein the insulating material solidifying step is a step of heating and solidifying the liquid insulating material. In the insulating film forming step,
Forming the insulating film made of a photosensitive resin material on the first conductive film, and exposing and developing the insulating film, thereby forming the contact hole penetrating the insulating film. A method for manufacturing a semiconductor device according to claim 1. In forming the mask material,
Forming a photosensitive resin film made of a photosensitive resin material on the insulating film;
6. The method of manufacturing a semiconductor device according to claim 1, wherein a mask material having an opening including the contact hole is formed by exposing and developing the photosensitive resin film. . Prior to the liquid material placement step,
The semiconductor device according to claim 6, further comprising a curing step of placing the mask material provided on the insulating film under reduced pressure, heating the mask material to a predetermined temperature, and further irradiating the mask material with ultraviolet rays. Manufacturing method.   8. The method of manufacturing a semiconductor device according to claim 7, further comprising a heat treatment step of heating the mask material to a high temperature equal to or higher than the predetermined temperature after the irradiation with the ultraviolet rays.   The method for manufacturing a semiconductor device according to claim 8, wherein a processing temperature in the drying step is equal to or lower than a processing temperature in the thermosetting processing step. The mask material is made of an inorganic material, and when forming the mask material,
A mask material film forming step of forming a mask material film made of an inorganic material on the insulating film;
The method for manufacturing a semiconductor device according to claim 1, further comprising: a patterning step of patterning the mask material film by photoetching.   11. The method of manufacturing a semiconductor device according to claim 1, further comprising a liquid repellent treatment step of making the surface of the mask material liquid repellent prior to the liquid material arranging step. In forming the mask pillar,
5. The mask pillar is formed by selectively supplying a liquid organic material to a contact hole forming region on the first conductive film and solidifying the liquid organic material. 6. A method for manufacturing the semiconductor device according to the item. In forming the mask pillar,
A step of applying a liquid organic material on the first conductive film; a solidification step of solidifying the liquid organic material to form an organic film; and patterning for forming the mask pillar by exposing and developing the organic film. The method for manufacturing a semiconductor device according to claim 2, further comprising: a step.   14. The curing process of disposing the mask pillar provided in the contact hole formation region under reduced pressure and irradiating the mask pillar with ultraviolet rays while heating the mask pillar to a predetermined temperature. Semiconductor device manufacturing method.   The method of manufacturing a semiconductor device according to claim 14, wherein the curing step includes a heat treatment step of heating the mask pillar to a high temperature equal to or higher than the predetermined temperature after the irradiation with the ultraviolet rays.   16. The method of manufacturing a semiconductor device according to claim 13, further comprising a step of performing a liquid repellent treatment on the mask pillar.   17. A method for manufacturing an electronic device, comprising the method for manufacturing a semiconductor device according to claim 1.   An electronic device comprising the semiconductor device obtained by the manufacturing method according to claim 1.   A display device comprising the semiconductor device obtained by the manufacturing method according to claim 1.

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