JP2005078881A - Luminescent display and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a reliable luminescent display having excellent image quality, and its manufacturing method. <P>SOLUTION: Layered structures are formed in a sealing material forming region, and the layered structures in the lower part of the sealing material are made identical to uniform their heights. Accordingly, no level difference is formed in the sealing material forming region, the sealing material forming region is sealed with excellent sealing performance, and the substrate interval between an element substrate and a substrate facing it is uniformed. Thereby, a luminescent display having high picture quality and no display unevenness is obtained. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

 The present invention relates to a display device (hereinafter referred to as a light emitting display device) having an element (hereinafter referred to as a light emitting element) in which a light emitting material is sandwiched between electrodes, and a manufacturing method thereof. In particular, the present invention relates to a sealing structure and method for a light-emitting display device using a light-emitting material from which EL (Electro Luminescence) can be obtained.

 In recent years, development of light-emitting display devices (EL display devices) using light-emitting elements (also referred to as EL elements) using the EL phenomenon of light-emitting materials has been progressing. Since the light emitting display device has a light emitting capability, the light emitting display device does not need a backlight like a liquid crystal display, and has advantages such as a wide viewing angle and high contrast.

  In the EL element, by applying a voltage with an organic compound layer sandwiched between a pair of electrodes, electrons injected from the cathode and holes injected from the anode are recombined at the emission center in the organic compound layer, and molecules are formed. It is said that when excitons are formed and the molecular excitons return to the ground state, they emit energy and emit light. Singlet excitation and triplet excitation are known as excited states, and light emission is considered to be possible through either excited state.

 A light-emitting display device using such a light-emitting element includes a counter substrate that seals the substrate on which the light-emitting element is formed in order to prevent characteristic deterioration due to moisture or the like. The counter substrate is bonded to the substrate on which the light emitting element is formed with a sealant (see, for example, Patent Document 1).

 A method in which an EL layer is formed between two types of stripe-shaped electrodes provided so as to be orthogonal to each other (passive matrix method) or a matrix connected to a switching element typified by a thin film transistor (TFT) There are two types of methods (active matrix method) in which an EL layer is formed between the arrayed pixel electrodes and the counter electrode.

 A peripheral driver circuit formed of a semiconductor integrated circuit (IC) is mounted on a display portion by a TAB (Tape Automated Bonding) method or a COG (Chip on glass) method. In addition, when a TFT using a crystalline semiconductor capable of high-speed operation instead of an amorphous semiconductor is used, an integrated display device in which a pixel portion (display portion) and a peripheral driver circuit are manufactured over the same substrate can be obtained. it can.

 FIG. 11 shows a display device in which a peripheral driving circuit is mounted by a TAB (Tape Automated Bonding) method. Reference numeral 501 denotes a substrate, 502 denotes a counter substrate, 503 denotes a pixel portion, 504 and 505 denote wirings, 506 and 507 denote FPCs (flexible printed circuits), 508 and 509 denote IC chips, and 510 denotes a sealing material.

A display device integrated with a pixel portion and a peripheral driver circuit is shown in FIG. Reference numeral 401 denotes a source line driver circuit, 402 denotes a gate line driver circuit, 403 denotes a pixel portion, and 409 denotes an FPC. Reference numeral 404 denotes a counter substrate, 405 denotes a sealing material, and 411 and 412 denote wirings.
JP 2003-17257 A

  In the display device illustrated in FIG. 11, the pixel portion 503 is connected to an FPC having an IC chip as a peripheral driver circuit, so that wirings 504 and 505 cross under the sealant 510. In the display device in FIG. 12, the FPC 409 in which the pixel portion 403, the source line driver circuit 401, and the gate line driver circuit 402 included in the sealant 405 are connected to the FPC 409 by wirings 411 and 412 is the sealant 405. Since the wires 411 and 412 are located outside the region, the wires 411 and 412 cross under the sealant 405.

  As described above, when the wiring crosses the lower side of the sealing material in order to connect from the inside of the sealing material to the outside, the wiring structure is no longer symmetrical on the top, bottom, left and right of the page, and the step of the sealing material extends the wiring. Different on the side with and without. Therefore, it becomes difficult to make the intervals between the substrates uniform when bonding the substrates. As a result, display unevenness due to interference or the like occurs, resulting in a decrease in image quality.

  Display unevenness becomes more conspicuous in a large-sized substrate. Therefore, it is necessary to precisely control a substrate interval (gap) between a counter substrate to be bonded with an increase in size.

  Further, if the level difference of the sealing material is not uniform, pressure is not applied evenly when the substrates are bonded together, and sealing with good airtightness cannot be performed. This leads to a decrease in yield and causes a decrease in reliability.

  An object of the present invention is to solve the above problems and provide a highly reliable light-emitting display device with excellent image quality and a method for manufacturing the light-emitting display device.

 The light-emitting display device of the present invention includes a first substrate having a matrix circuit and a light-emitting element using a light-emitting material, a second substrate facing the first substrate, the first substrate, and a second substrate. In the light emitting display device, the light emitting display device includes: a sealing material that fixes the substrate; and a wiring that crosses a lower portion of the sealing material in the first substrate and is electrically connected to the outside. In the region where the sealing material is formed, at least one layered structure is formed below the sealing material, and the layered structure is electrically insulated.

 In the above structure, the stacked structure may include a support member made of at least the same material as the wiring of the matrix circuit. In the light-emitting display device of the present invention, the matrix circuit has a layered wiring structure that is insulated for each layer by an insulating film, and the layered structure has at least the same layered structure as the layered wiring structure. It is characterized by that.

 The present invention eliminates or reduces a sealing step generated due to wiring or the like that crosses the lower part of the sealing material and is electrically connected to the outside by the laminated structure. Therefore, the laminated structure is formed in the same process with the same material as the wiring and insulating film crossing the lower part of the sealing material.

 In the above structure, the maximum thickness of the stacked structure is substantially equal to the maximum thickness of the matrix circuit and the light emitting element. A matrix circuit and a light emitting element are formed in the inside surrounded by the sealing material. If the maximum value of the height of the formed first substrate (element substrate) and the maximum value of the stacked structure are substantially equal, when the second substrate (counter substrate) is fixed by the sealing material It is possible to prevent the internal circuits and elements from being destroyed or damaged by such pressure. In addition, since uniform substrate spacing can be maintained, display unevenness due to light interference and the like can be prevented, and high-quality image display can be performed.

 In the light-emitting display device of the present invention, the signal lines and the scanning lines arranged in a matrix and separated by the first insulating film, and the intersections of the signal lines and the scanning lines are arranged, and the second insulating film A matrix circuit having signal lines and pixel electrodes separated from each other; a first substrate having a light emitting element using a light emitting material; a second substrate facing the first substrate; and the matrix circuit. A light-emitting display device comprising: a sealing material that surrounds and fixes the first substrate and the second substrate; and a wiring that crosses a lower portion of the sealing material in the first substrate and is electrically connected to the outside. In the first substrate, in the sealing material forming region, a first support member made of at least the same material as the scanning line is formed below the sealing material, the first insulating film, and the signal line. From the same material A second support member that, the second insulating film are stacked in different layers from each other, the laminated structure is characterized in that it is electrically insulated.

 In the structure, when the stacked structure is a stacked structure in which the end surface of the first support member and the end surface of the second support member do not overlap with each other, an effect of flattening the height of the stacked structure can be obtained. is there.

 Further, in the matrix circuit, the stacked structure is a structure that has the same stacked structure as a densely stacked portion, for example, a region where at least the signal line and the scanning line overlap, The thickness of the stack can be increased. Therefore, the pressure at the time of bonding the substrates is uniformly applied to the sealing material and the laminated structure under the sealing material, and can be sealed with good sealing properties. In addition, it is possible to prevent the element structure formed on the substrate from being broken or the scanning line and the signal line from being short-circuited between the upper and lower sides by the pressure due to the sealing.

 In addition, when the first support member has a shape meandering under the seal material, or the support member has a shape that branches into a plurality under the seal material, the wiring member or the support member intrudes from the outside. The effect of blocking moisture and the like is improved, and deterioration of the light-emitting display device can be prevented.

 For the support member, a film made of one or more kinds selected from conductive materials and insulating materials may be used. As the conductive thin film, a film made of one or more elements selected from Al, Ti, Mo, W, or Si may be used. As the insulating thin film, one selected from silicon nitride, silicon oxide, silicon nitride oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide, aluminum oxide, diamond-like carbon (DLC), nitrogen-containing carbon film (CN), or Multiple types of films can be used.

 As another insulating material, a film containing one kind or plural kinds of materials selected from polyimide, acrylic, benzocyclobutene, and polyamide may be used. In addition, a skeleton structure is formed by a bond of silicon (Si) and oxygen (O), and at least one of a material containing at least hydrogen as a substituent, or fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent. A material (typically a siloxane polymer) may be used.

 A method for manufacturing a light-emitting display device according to the present invention includes a first substrate including a matrix circuit and a light-emitting element using a light-emitting material, a second substrate facing the first substrate, and the first substrate. In the method for manufacturing a light-emitting display device, which includes: a sealing material that fixes the first substrate and the second substrate; and a wiring that crosses a lower portion of the sealing material in the first substrate and is electrically connected to the outside. In one substrate, at least one layered structure is formed below the sealant in a region where the sealant is formed, and the layered structure is formed by being electrically insulated.

 In the above configuration, the laminated structure may include at least a support member made of the same material as the wiring of the matrix circuit. In the method for manufacturing a light-emitting display device according to the present invention, the wiring structure of the matrix circuit is formed by a layered wiring structure that is insulated for each layer by an insulating film, and has the same stacked structure as the layered wiring structure. It is characterized by having.

 The present invention eliminates or reduces a sealing step generated due to wiring or the like that crosses the lower part of the sealing material and is electrically connected to the outside by the laminated structure. Therefore, the laminated structure is formed in the same process with the same material as the wiring and insulating film crossing the lower part of the sealing material. Therefore, a highly reliable light-emitting display device can be manufactured without increasing manufacturing steps.

 In the above configuration, the maximum thickness of the stacked structure may be formed to be approximately equal to the maximum thickness of the matrix circuit and the light emitting element. A matrix circuit and a light emitting element are formed in the inside surrounded by the sealing material. If the maximum value of the height of the formed first substrate (element substrate) and the maximum value of the stacked structure are substantially equal, when the second substrate (counter substrate) is fixed by the sealing material The internal circuits and elements can be prevented from being destroyed by such pressure. In addition, since uniform substrate spacing can be maintained, display unevenness due to light interference and the like can be prevented, and high-quality image display can be performed.

 For the support member, a film made of one or more kinds selected from conductive materials and insulating materials may be used. As the conductive thin film, a film made of one or more elements selected from Al, Ti, Mo, W, or Si may be used. As the insulating thin film, one selected from silicon nitride, silicon oxide, silicon nitride oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide, aluminum oxide, diamond-like carbon (DLC), nitrogen-containing carbon film (CN), or Multiple types of films can be used.

 As another insulating material, a film containing one kind or plural kinds of materials selected from polyimide, acrylic, benzocyclobutene, and polyamide may be used. In addition, a skeleton structure is formed by a bond of silicon (Si) and oxygen (O), and at least one of a material containing at least hydrogen as a substituent, or fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent. A material (typically a siloxane polymer) may be used.

  According to the present invention, since the distance between the substrates can be maintained uniformly, display unevenness caused by light interference or the like is eliminated, and a high-definition light-emitting display device excellent in image display and a method for manufacturing the light-emitting display device are provided. it can. In addition, the yield is improved and the reliability is increased.

(Embodiment 1)
FIG. 1 shows an example of a schematic top view of a light-emitting display device of the present invention. 100 is an element substrate, 101 is a source line driver circuit, 102 and 103 are gate line driver circuits, 104 is a counter substrate, 105 is a sealing material, 106 is a pixel portion, 107 is a scanning line, 108 is a signal line, 109 is an FPC, Reference numerals 110, 111, and 112 denote wirings. In this embodiment mode, a circuit as described above is formed; however, the present invention is not limited to this, and a passive matrix circuit or an active matrix circuit may be used, and an IC chip is used as a peripheral driver circuit in the COG method or TAB. It may be implemented by a method or integrally formed. Further, the gate line driver circuit and the source line driver circuit may be plural or singular.

 On the region R1 side which is a part of the formation region of the sealing material 105, the wirings 110, 111, and 112 cross the sealing material 105 and connect the peripheral drive circuit and the FPC, but other peripheral portions R2, R3, There is no wiring crossing the sealing material 105 on the R4 side. Therefore, in this invention, the board | substrate space | interval correction | amendment means which makes the level | step difference of a sealing material lower structure uniform is formed.

 In the light emitting display device of the present invention, when the element substrate and the counter substrate are bonded to each other by the sealing material, the height of the unevenness formed on the element substrate side is made uniform. Therefore, a support member is formed in the lower part of the seal portion on the region R2, R3, R4 side in FIG. 2A is a cross-sectional view taken along line AA ′ in FIG. 1, FIG. 2B is a cross-sectional view taken along line BB ′, and FIG. A top view is shown.

 In FIG. 2A, a first insulating film 201 is formed on an element substrate 100, and a wiring 112 and a second insulating film 202 are stacked thereon. In FIG. 2B, a first insulating film 201 is formed on the element substrate 100, and a first support member 250 and a second insulating film 202 are stacked thereon. The first support member 250 may be formed of the same material as the signal line 108 in the same process. When a conductive material such as the same material as the signal line 108 and the scanning line 107 is used as a laminated structure under the seal portion, the laminated structure is substantially electrically connected to prevent short circuit with other wirings. Need to be insulated.

  In FIG. 2, the wiring 112 formed of the same material and in the same process as the signal line 108 crosses the sealing material, but the wirings 110 and 111 formed of the same material and in the same process as the scanning line 107 are below the sealing material. May be crossed. In this case, in the cross section on the region R1 side in FIG. 1, as shown in FIG. 4A, the wiring 110 or 111 is formed on the element substrate 100, and the first insulating film 201 and the second insulating film are formed thereon. The film 202 is stacked. Therefore, the second support member 251 may be formed in the same process with the same material as the scanning line 107 in the formation region of the sealing material 105 on the other regions R2, R3, and R4 side. As shown in FIG. 4B, the cross section of the region where the sealing material 105 is formed on the side of the regions R2, R3, R4 is such that the second support member 251 is formed on the element substrate 100, and the first insulating film is formed thereon. The second insulating film is stacked. Since the wirings 110 and 111 and the second support member are both formed of the same material and in the same process as the scanning line, in the light emitting display device of the present invention, the stacked structure formed in the formation region of the sealant 105 is It becomes the same and its height is also equal.

  Further, the wiring 112 extended from the pixel portion 103 is formed integrally with the first support member 250 in a region crossing the sealing material 105, and the wiring 110 or the wiring 111 is crossed across the sealing material 105. One support member 250 is connected to the inside of the region where the sealing material 105 is formed. FIG. 3 shows a top view of a region where the sealing material 105 of the light emitting display device of the present invention is formed. As shown in FIG. 3, since the wiring that is electrically connected to the circuit outside the element substrate across the region where the sealing material 105 is formed is composed of only the first support member 250, the level difference of the sealing material is reduced. It can be made more uniform. In the present embodiment, the first support member 250 is used as the wiring that crosses the lower side of the sealant 105 and is connected to the outside. However, in this case, the second support member 251 described above may be used. If the wiring 110 or 111 is formed integrally with the second support member 251, and the wiring 112 is connected to the second support member 251 traversing the lower side of the sealing material 105 inside the formation region of the sealing material 105. Good.

 In the light emitting display device of the present invention, the step of the laminated structure in the sealing material forming region is formed by forming the support member on the region R2, R3, R4 side where the wiring for connecting the lower side of the sealing material to the outside does not cross. Lost and uniform. In such regions R2, R3, and R4, the support member is formed in the sealing material forming region. 7A is a cross-sectional view taken along line AA ′ in FIG. 1, FIG. 7B is a cross-sectional view taken along line BB ′, and FIG. 7C is a diagram illustrating the formation of the sealing material 105 of the light-emitting display device of the present invention. A top view of the region is shown.

 As shown in FIG. 7, the support member 751 is formed in a rectangular wave shape substantially the same as that of the sealing material. In the present invention, the width direction of the sealing material is a direction orthogonal to the line AA ′ in FIG. In this way, when the support member is formed with a length narrower than the width in the seal material width direction, the conductive film as the support member exists in an arbitrary cross-sectional structure in the seal material width direction, so that moisture enters from the outside. This can be prevented. The support member is not limited to a conductive film, and may be an inorganic material or an organic material. However, a layer made of a dense material having low moisture permeability such as an inorganic material or a conductive material has a higher effect of shielding moisture and the like. preferable. In this embodiment, a conductive film made of the same material as the signal line is used as the support member.

 As the support member, a film made of one or more kinds selected from conductive materials and insulating materials may be used. As the conductive thin film, a film made of one or more elements selected from Al, Ti, Mo, W, or Si may be used. As the insulating thin film, one selected from silicon nitride, silicon oxide, silicon nitride oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide, aluminum oxide, diamond-like carbon (DLC), nitrogen-containing carbon film (CN), or Multiple types of films can be used.

 As another insulator, a film containing one kind or plural kinds of materials selected from polyimide, acrylic, benzocyclobutene, and polyamide may be used. In addition, a skeleton structure is formed by a bond of silicon (Si) and oxygen (O), and at least one of a material containing at least hydrogen as a substituent, or fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent. A material (typically a siloxane polymer) may be used.

 When the present invention is used in this way, the cross-sectional configuration along the edge of the region where the sealing material 105 is formed becomes uniform, so that the level difference of the sealing material can be made uniform. Accordingly, since the distance between the substrates can be maintained uniformly, display unevenness is eliminated, and a light-emitting display device that is highly delicate and excellent in image display can be provided.

(Embodiment 2)
In the sealant 105 of the light emitting display device of the present invention shown in FIG. 1, the region where the thickness of the stack is maximum is a region where the signal line 108 and the scanning line 107 overlap, and this region is at least on the element substrate. In addition, signal lines, interlayer insulating films, scanning lines, passivation films, and the like are stacked.

 In the present embodiment, a laminated structure as shown in FIG. 5 is formed as a substrate interval correction unit in the formation region of the sealing material 105. 5A is a cross-sectional view taken along line AA ′ in FIG. 1, FIG. 5B is a cross-sectional view taken along line BB ′, and FIG. 5C is a region where the sealing material 105 of the light-emitting display device of the present invention is formed. The top view of is shown.

 5A, the second support member 551 is formed on the element substrate 500, and the wiring 112 is formed on the second support member 551 with the first insulating film 501 interposed therebetween. A second insulating film 502 is formed thereon. 5B, the second support member 551 is formed on the element substrate 500, and the first support member 550 is formed on the second support member 551 with the first insulating film 501 interposed therebetween. Has been. A second insulating film 502 is formed thereon. The first support member 550 is formed of the same material as the signal line, and the second support member 551 is formed of the same material in the same process.

 When there is a wiring crossing the lower side of the sealing material as in the region R1 in FIG. 1, the first support member 550 and the second support member 551 are the same material and the wiring formed in the same process, respectively. Become. In the present embodiment, an example in which the wiring 112 crosses the lower side of the sealing material is shown. However, when the wirings 110 and 111 cross the sealing material, the second support member 551 is connected to the wiring along the line AA ′. 110, 111, or one formed integrally may be used. As shown in FIG. 5C, the light-emitting display device of the present invention has a structure in which layers formed of the same material and in the same process as the scanning lines and the signal lines are overlapped in all the sealing material formation regions. . When a conductive material such as the same material as the signal line 108 is used as the laminated structure under the seal portion, the laminated structure needs to be substantially electrically insulated in order to prevent short circuit with other wirings. is there.

 As described above, when the present invention is used, the cross-sectional configuration along the edge of the sealing material forming region becomes uniform, so that the level difference of the sealing material can be made uniform.

 Further, in this embodiment mode, the stacked structure in the region where the sealant 105 is formed can be made equal to the height of the region where the thickness of the stack is maximum in the sealant 105 of the light-emitting display device. Accordingly, since the pressure when the substrates are bonded can be supported by the sealant, the scanning line and the signal line can be prevented from being short-circuited between the upper and lower sides by a spacer or the like. Note that a pixel electrode, a black matrix, or the like may be further stacked in a region where the signal line 108 and the scanning line 107 overlap with each other. It is preferable to stack a matrix or the like and control the substrate interval.

 In the light emitting display device of the present invention, the step of the laminated structure in the sealing material forming region is formed by forming the support member on the region R2, R3, R4 side where the wiring for connecting the lower side of the sealing material to the outside does not cross. Lost and uniform. On such a region R2, R3, R4 side, the support member is formed in the sealing material forming region. 8A is a cross-sectional view taken along the line AA ′ in FIG. 1, FIG. 8B is a cross-sectional view taken along the line BB ′, and FIG. 8C is the formation of the sealing material 105 of the light-emitting display device of the present invention. A top view of the region is shown.

 As shown in FIG. 8, the support member 851 is formed in a rectangular wave shape substantially equal to the width of the sealing material. In this way, when the support member is formed with a length narrower than the width in the seal material width direction, the conductive film as the support member exists in an arbitrary cross-sectional structure in the seal material width direction, so that moisture enters from the outside. This can be prevented. Further, even on the region R1 side where the wiring crosses the lower side of the sealing material, the second support member for adjusting the step is formed in the sealing material forming region and covered with the sealing material, so that it is externally provided. Invading moisture can be reduced. The supporting member is not limited to the conductive film by the sealing material, but may be an inorganic material or an organic material. However, a layer made of a dense material with low moisture permeability such as an inorganic material or a conductive material shields moisture or the like. The effect is high and preferable. In this way, by blocking contaminants such as moisture entering from the outside, deterioration of the light-emitting element is prevented, and the reliability of the light-emitting display device is improved. In this embodiment mode, a signal line is used as the first support member, and a scanning line is used as the second support member, and conductive films of the same material are used.

  In the present embodiment, the sealing material is formed so as to surround the periphery of the region to be sealed by the sealing material. However, even if the sealing material is formed not only around but also over the entire region to be sealed, it is a partial region. You may form in. In the present embodiment, the laminated structure below the sealing material is formed at a height substantially equal to the maximum height of the matrix circuit, the light emitting element, and the like formed on the element substrate. Therefore, since the substrate spacing is kept uniform by the laminated structure under the sealing material, even if the sealing material is formed on the entire surface, a high-quality image without display unevenness can be obtained and the sealing material has a filler, etc. Therefore, elements and wirings are not destroyed.

 According to the present invention, since the distance between the substrates can be maintained uniformly, display unevenness due to interference or the like is eliminated, and a highly reliable light-emitting display device with excellent image display and high yield can be manufactured.

(Embodiment 3)
As an example of the light-emitting display device of the present invention, in this embodiment, a laminated structure as shown in FIG. 6A is a cross-sectional view taken along line AA ′ in FIG. 1, FIG. 6B is a cross-sectional view taken along line BB ′, and FIG. 6C is a region where the sealing material 105 of the light emitting display device of the present invention is formed. The top view of is shown.

 In FIG. 6A, a second support member 651 is formed on the element substrate 600, and the second support member 651 is overlapped on the second support member 651 with the first insulating film 601 interposed therebetween. Wirings 112 are formed so as not to become. A second insulating film 602 is formed thereon. In FIG. 6B, a second support member 651 is formed on the element substrate 600, and the second support member 651 is overlapped on the second support member 651 with the first insulating film 601 interposed therebetween. The first support member 650 is formed so as not to become. A second insulating film 602 is formed thereon. The first support member 650 and the second support member 651 are formed of the same material and in the same process, respectively, as the signal line and the second support member 651.

 When there is a wiring crossing the lower side of the sealing material as in the region R1 in FIG. 1, the first support member 650 and the second support member 651 are the same material and the wiring formed in the same process, respectively. Become. In the present embodiment, an example in which the wiring 112 crosses the lower side of the sealing material is shown. However, when the wirings 110 and 111 cross the sealing material, the second support member 551 is connected to the wiring along the line AA ′. 110, 111, or one formed integrally may be used. As shown in FIG. 6C, in the light emitting display device of the present invention, the layers formed of the same material and the same material as the scanning lines and the signal lines are alternately formed in each sealing material forming region, It has a structure that does not overlap. Therefore, the level difference due to the wiring connecting to the outside across the lower side of the sealing material is reduced by the support members formed alternately, and the height becomes uniform. In the case of FIG. 6A, since the second support member is a dummy wiring, when a conductive material such as the same material as the signal line 108 is used as the laminated structure under the sealing material, other wirings, etc. In order to prevent a short circuit, it is necessary to substantially electrically insulate the support member.

 In the light emitting display device of the present invention, the step of the laminated structure in the sealing material forming region is formed by forming the support member on the region R2, R3, R4 side where the wiring for connecting the lower side of the sealing material to the outside does not cross. Lost and uniform. In such regions R2, R3, and R4, the support member is formed in the sealing material forming region. 9A is a cross-sectional view taken along line AA ′ in FIG. 1, FIG. 9B is a cross-sectional view taken along line BB ′, and FIG. 9C is a diagram illustrating the formation of the sealing material 105 of the light-emitting display device of the present invention. A top view of the region is shown.

 As shown in FIG. 9, the support member 951 is formed in a rectangular wave shape substantially equal to the width of the sealing material. In this way, when the support member is formed with a length narrower than the width in the seal width direction, since the conductive film as the support member exists in any cross-sectional structure in the seal material width direction, moisture enters from the outside. Can be prevented. In addition, even on the region R1 side where the wiring crosses under the seal material, a second support member for adjusting the step is formed in the seal width region, and the cross section is covered with the seal material, so that the cross section is covered from the outside. Invading moisture can be reduced. The supporting member is not limited to the conductive film by the sealing material, but may be an inorganic material or an organic material. However, a layer made of a dense material with low moisture permeability such as an inorganic material or a conductive material shields moisture or the like. The effect is high and preferable. In this manner, by blocking contaminants such as moisture entering from the outside, deterioration of the light-emitting display device of the present invention can be prevented and reliability can be improved. In this embodiment mode, a signal line is used as the first support member, and a scanning line is used as the second support member, and conductive films of the same material are used.

 As described above, when the present invention is used, the cross-sectional configuration along the edge of the region where the sealing material is formed becomes uniform, so that the level difference of the sealing material can be made uniform. Accordingly, since the distance between the substrates can be maintained uniformly, display unevenness is eliminated, and a light-emitting display device that is highly delicate and excellent in image display can be provided.

(Embodiment 4)
As an example of the light emitting display device of the present invention, in this embodiment, a laminated structure as shown in FIG. 10A is a cross-sectional view taken along line AA ′ in FIG. 1, FIG. 10B is a cross-sectional view taken along line BB ′, and FIG. 10C is a region where the sealing material 105 of the light emitting display device of the present invention is formed. The top view of is shown.

 In FIG. 10A, a first insulating film 1001 is formed on an element substrate 1000, and a wiring 112 and a second insulating film 1002 are stacked thereon. In FIG. 2B, a first insulating film 1001 is formed on an element substrate 1000, and a first support member 1050 and a second insulating film 1002 are stacked thereon. The first support member 1050 may be formed of the same material as the signal line 108 in the same process. When a conductive material such as the same material as the signal line 108 and the scanning line 107 is used as a laminated structure under the seal portion, the laminated structure is substantially electrically connected to prevent short circuit with other wirings. Need to be insulated.

  In the present embodiment, the wiring 112 and the second support member for adjusting the level difference of the sealing material generated when the wiring 112 crosses the sealing material are electrically connected as shown in FIG. As long as they are not connected, they are formed in a shape that branches into a plurality and fills the gaps between them. With this shape, the level difference of the laminated structure below the sealing material is further reduced, and the flatness is improved.

  Further, in the laminated structure pattern under the sealing material of the present embodiment, the wiring and the supporting member are formed over a large area, and there are few gaps. In addition, in any cross-sectional configuration (cross-sectional configuration along a line perpendicular to line AA ′) that crosses the sealing material forming region, wiring and a supporting member always exist, so the wiring and the supporting member enter from the outside. The effect of blocking moisture and the like to be improved is improved, and deterioration of the light-emitting display device can be prevented. The structure of the wiring and the supporting member can be freely set as long as they are not electrically connected, and may be appropriately designed so as to reduce the gap between the wiring and the supporting member in the sealing material forming region.

 This embodiment mode is not limited to the structure described above, and can be applied to the light-emitting display device of the present invention described in Embodiment Modes 1 to 3.

 According to the present invention, since the distance between the substrates can be maintained uniformly, display unevenness due to interference or the like is eliminated, and a highly reliable light-emitting display device with excellent image display and high yield can be manufactured.

 In this embodiment, an example of manufacturing a light-emitting display device having a dual emission structure using the present invention will be described with reference to FIGS. 13 and 17 to 19, (a) is a cross-sectional view taken along lines CC ′ and DD ′ in the top view of (b), and corresponds to each other.

 In the present invention, a light-emitting display device includes a display panel in which a light-emitting element formed on a substrate is sealed between the substrate and a cover material (counter substrate), and a display module including a TFT in the display panel. It is a collective term. Note that the light-emitting element includes a layer (light-emitting layer) containing an organic compound from which EL can be obtained, an anode layer, and a cathode layer. Luminescence in an organic compound includes light emission (fluorescence) when returning from a singlet excited state to a ground state and light emission (phosphorescence) when returning from a triplet excited state to a ground state. The EL materials that can be used in the present invention include all luminescent materials that emit light through singlet excitation, triplet excitation, or both.

  In the present invention, all layers formed between the anode and the cathode in the light emitting element are defined as organic light emitting layers. Specifically, the organic light emitting layer includes a light emitting layer, a hole injection layer, an electron injection layer, a hole transport layer, an electron transport layer, and the like. Basically, a light emitting element has a structure in which an anode layer, a light emitting layer, and a cathode layer are sequentially laminated. In addition to this structure, an anode layer, a hole injection layer, a light emitting layer, a cathode layer, and an anode layer , A hole injection layer, a light emitting layer, an electron transport layer, a cathode layer and the like may be laminated in this order.

  A silicon oxynitride film 301b of 10 to 200 nm (preferably 50 to 100 nm) is formed as a base film 301 over the substrate 300 having an insulating surface by a plasma CVD method, and the silicon oxynitride film 301a is formed of 50 to 200 nm (preferably 100). ˜150 nm). In this embodiment, a silicon oxynitride film is formed with a thickness of 50 nm and a silicon oxynitride film is formed with a thickness of 100 nm by plasma CVD. As the substrate 300, a glass substrate, a quartz substrate, a silicon substrate, a metal substrate, or a stainless substrate on which an insulating film is formed may be used. Further, a plastic substrate having heat resistance that can withstand the processing temperature of this embodiment may be used, or a flexible substrate may be used. Further, a two-layer structure may be used as the base film, or a single layer film of the base (insulating) film or a structure in which two or more layers are stacked may be used. The base film 301 is similarly formed in a sealing region including the sealing material formation region, in which the element substrate and the counter substrate are bonded to seal the light emitting element.

  Next, a semiconductor film is formed over the base film. The semiconductor film may be formed by a known means (a sputtering method, an LPCVD method, a plasma CVD method, or the like) with a thickness of 25 to 200 nm (preferably 30 to 150 nm). There is no limitation on the material of the semiconductor film, but it is preferably formed of silicon or a silicon germanium (SiGe) alloy.

 The semiconductor film uses an amorphous semiconductor (typically hydrogenated amorphous silicon) or a crystalline semiconductor (typically polysilicon) as a material. For polysilicon, so-called high-temperature polysilicon using polycrystalline silicon formed at a process temperature of 800 ° C. or higher as a main material, or polycrystalline silicon formed at a process temperature of 600 ° C. or lower as a main material is used. It includes so-called low-temperature polysilicon and crystalline silicon that is crystallized by adding an element that promotes crystallization.

As another substance, a semi-amorphous semiconductor or a semiconductor including a crystal phase in part of a semiconductor film can be used. A semi-amorphous semiconductor is a semiconductor having an intermediate structure between amorphous and crystalline (including single crystal and polycrystal), and has a third state that is stable in terms of free energy, and has a short distance. It is crystalline with order and lattice distortion. Typically, it is a semiconductor film containing silicon as a main component and having a Raman spectrum shifted to a lower wave number side than 520 cm ⁻¹ with lattice distortion. Further, hydrogen or halogen is contained at least 1 atomic% or more as a neutralizing agent for dangling bonds. Here, such a semiconductor is referred to as a semi-amorphous semiconductor (hereinafter referred to as “SAS”). This SAS is also called a so-called microcrystalline semiconductor (typically microcrystalline silicon).

This SAS can be obtained by glow discharge decomposition of a silicide gas. A typical silicide gas is SiH ₄ , and in addition, Si ₂ H ₆ , SiH ₂ Cl ₂ , SiHCl ₃ , SiCl ₄ , SiF _{4 and the} like can be used. The formation of the SAS can be facilitated by diluting the silicide gas with hydrogen or one or plural kinds of rare gas elements selected from hydrogen and helium, argon, krypton, and neon. The dilution ratio of hydrogen with respect to the silicide gas is preferably 5 to 1000 times as a flow rate ratio, for example. Of course, formation of the SAS by glow discharge decomposition is preferably performed under reduced pressure, but it can also be formed by utilizing discharge at atmospheric pressure. Typically, it may be performed in a pressure range of 0.1 Pa to 133 Pa. The power supply frequency for forming the glow discharge is 1 MHz to 120 MHz, preferably 13 MHz to 60 MHz. What is necessary is just to set high frequency electric power suitably. The substrate heating temperature is preferably 300 ° C. or lower, and can be formed even at a substrate heating temperature of 100 to 200 ° C. Here, as an impurity element mainly taken in at the time of film formation, it is desirable that impurities derived from atmospheric components such as oxygen, nitrogen, and carbon be 1 × 10 ²⁰ cm ⁻³ or less, and in particular, the oxygen concentration is 5 × 10 5. It is preferable to be ¹⁹ cm ⁻³ or less, preferably 1 × 10 ¹⁹ cm ⁻³ or less. Further, by adding a rare gas element such as helium, argon, krypton, or neon to further promote lattice distortion, stability is improved and a favorable SAS can be obtained.

In this embodiment, an amorphous silicon film having a thickness of 54 nm is formed as a semiconductor film by a plasma CVD method. In this embodiment, a thermal crystallization method and a laser crystallization method using a metal element for promoting crystallization are performed on the amorphous silicon film, or nitrogen gas is not introduced into the amorphous silicon film. Laser crystallization may be performed by heating to 500 ° C. in an atmosphere for 1 hour to release the hydrogen concentration of the amorphous silicon film to 1 × 10 ²⁰ atoms / cm ³ or less. This is because the film is destroyed when the amorphous silicon film containing a large amount of hydrogen is irradiated with laser light.

  Nickel is used as the metal element and is introduced onto the amorphous silicon film by a solution coating method. The method of introducing the metal element into the amorphous silicon film is not particularly limited as long as the metal element can be present on the surface of the amorphous silicon film or inside the amorphous silicon film. For example, sputtering, CVD, A plasma treatment method (including a plasma CVD method), an adsorption method, or a method of applying a metal salt solution can be used. Among these, the method using a solution is simple and useful in that the concentration of the metal element can be easily adjusted. At this time, in order to improve the wettability of the surface of the amorphous semiconductor film and to spread the aqueous solution over the entire surface of the amorphous silicon film, irradiation with UV light in an oxygen atmosphere, thermal oxidation method, hydroxy radical It is desirable to form an oxide film by treatment with ozone water or hydrogen peroxide.

  Thereafter, heat treatment is performed at 500 to 550 ° C. for 4 to 20 hours to crystallize the amorphous silicon film. In this embodiment, nickel is used as the metal element, a metal-containing layer is formed by a solution coating method, introduced onto the amorphous silicon film, and then heat-treated at 550 ° C. for 4 hours to form the first crystalline silicon film. Obtained.

Next, the first crystalline silicon film is irradiated with laser light to promote crystallization, thereby obtaining a second crystalline silicon film. In the laser crystallization method, a semiconductor film is irradiated with laser light. The laser used is preferably a pulsed or continuous wave solid state laser, a gas laser, or a metal laser. The solid laser includes a YAG laser, a YVO ₄ laser, a YLF laser, a YAlO ₃ laser, a glass laser, a ruby laser, an alexandride laser, a Ti: sapphire laser, and the gas laser includes an excimer laser, an Ar laser, There are Kr laser, CO ₂ laser, and the like, and examples of the metal laser include helium cadmium laser, copper vapor laser, and gold vapor laser. The laser beam may be converted into a harmonic by a non-linear optical element. Crystals used in the nonlinear optical element are excellent in terms of conversion efficiency when, for example, LBO, BBO, KDP, KTP, KB5, and CLBO are used. By introducing these nonlinear optical elements into the laser resonator, the conversion efficiency can be greatly increased. The harmonic laser is generally doped with Nd, Yb, Cr, etc., and this is excited to oscillate the laser. The practitioner may select the type of dopant as appropriate. Examples of the semiconductor film include an amorphous semiconductor film, a microcrystalline semiconductor film, a crystalline semiconductor film, and the like, and a compound semiconductor film having an amorphous structure such as an amorphous silicon germanium film or an amorphous silicon carbide film. May be applied.

  The crystalline semiconductor film thus obtained is doped with a trace amount of an impurity element (boron or phosphorus) in order to control the threshold voltage of the TFT.

  The semiconductor layer 302 is formed by a patterning process using a photolithography method.

  A gate insulating film 306 is formed to cover the semiconductor layer 302. The gate insulating film 306 is formed of an insulating film containing silicon with a thickness of 40 to 150 nm by using a plasma CVD method or a sputtering method. In this embodiment, a silicon oxynitride film is formed with a thickness of 115 nm by plasma CVD. Of course, the gate insulating film is not limited to the silicon oxynitride film, and another insulating film may be used as a single layer or a laminated structure. In this embodiment, in the same step of forming the gate insulating film 306, the insulating film 317 is also formed in the sealing region with the same material.

  Next, a first conductive film 307 with a thickness of 20 to 100 nm and a second conductive film 308 with a thickness of 100 to 400 nm which are used as a gate electrode are stacked over the gate insulating film. The first conductive film 307 and the second conductive film 308 may be formed using an element selected from Ta, W, Ti, Mo, Al, and Cu, or an alloy material or a compound material containing the element as a main component. Alternatively, a semiconductor film typified by a polycrystalline silicon film doped with an impurity element such as phosphorus, or an AgPdCu alloy may be used as the first conductive film and the second conductive film. Further, the present invention is not limited to the two-layer structure. For example, a three-layer structure in which a tungsten film with a thickness of 50 nm, an aluminum-silicon alloy film (Al-Si) with a thickness of 500 nm, and a titanium nitride film with a thickness of 30 nm are sequentially stacked. Also good. In the case of a three-layer structure, tungsten nitride may be used instead of tungsten of the first conductive film, or aluminum instead of the aluminum and silicon alloy (Al-Si) film of the second conductive film. A titanium alloy film (Al—Ti) may be used, or a titanium film may be used instead of the titanium nitride film of the third conductive film. Moreover, a single layer structure may be sufficient. Note that in this example, a tantalum nitride film having a thickness of 30 nm is formed as the first conductive film 307 and a tungsten film having a thickness of 370 nm is sequentially stacked as the second conductive film 308 over the gate insulating film 306 (FIG. 13). (A) Refer to the cross-sectional view.) At this time, similarly, the conductive layers 318 and 319 are formed in the same material and in the same process as the first conductive layer 307 and the second conductive layer 308, respectively, in the sealing material formation region. Any of the first to fourth embodiments may be applied as the wiring pattern. Since the conductive layers 318 and 319 are dummy wirings that reduce the level difference in the sealing material formation region, the conductive layers 318 and 319 need to be substantially electrically insulated.

  The top view of FIG. 13B shows a sealing region and a pixel region where a sealing material is formed. In the pixel region, scanning lines (gate lines) made of conductive films 307 and 308 are formed on the semiconductor layer 302. The conductive film 307 is not shown in the top view of FIG. 13B because it is formed below the conductive film 308. Conductive films 318 and 319 to be dummy wirings are also formed in the sealing region. The conductive films 318 and 319 are electrically insulated from the internal conductive film and are not connected. Although not shown, the base film and the insulating film 317 are also formed in the sealing region as shown in the sectional view (a).

Next, a resist mask is formed using a photolithography method, and a first etching process for forming electrodes and wirings is performed. Using an ICP (Inductively Coupled Plasma) etching method, the etching conditions (the amount of power applied to the coil-type electrode, the amount of power applied to the electrode on the substrate side, the electrode temperature on the substrate side, etc.) are appropriately set. By adjusting, the first conductive film and the second conductive film can be etched into a desired tapered shape. As an etching gas, a chlorine-based gas typified by Cl ₂ , BCl ₃ , SiCl _4, CCl _4, etc., a fluorine-based gas typified by CF ₄ , SF _6, NF _3, etc., or O ₂ is appropriately used. be able to.

  A first shape conductive layer (first conductive layer and second conductive layer) including the first conductive layer and the second conductive layer is formed by the first etching process.

  Next, a second etching process is performed without removing the resist mask. Here, the W film is selectively etched. At this time, the second conductive layer is formed by the second etching process. On the other hand, the first conductive layer is hardly etched and forms a second shape conductive layer. Accordingly, a conductive film 311 and a conductive film 312 are formed.

Then, a first doping process is performed without removing the resist mask, and an impurity element imparting n-type conductivity is added to the semiconductor layer at a low concentration. The doping process may be performed by ion doping or ion implantation. As an impurity element imparting n-type, an element belonging to Group 15, typically phosphorus (P) or arsenic (As), is used here, but phosphorus (P) is used. In this case, the conductive layer serves as a mask for the impurity element imparting n-type conductivity, and an impurity region is formed in a self-aligning manner. An impurity element imparting n-type is added to the impurity region in a concentration range of 1 × 10 ¹⁸ to 1 × 10 ²⁰ / cm ³ . By the first doping, an n-type low concentration impurity region 311 is formed.

After removing the mask made of resist, a new mask made of resist is formed, and the second doping process is performed at an acceleration voltage higher than that of the first doping process. In the doping treatment, the second conductive layer is used as a mask for the impurity element, and doping is performed so that the impurity element is added to the semiconductor layer below the tapered portion of the first conductive layer. Subsequently, the third doping process is performed by lowering the acceleration voltage than the second doping process. By the second doping process and the third doping process, an impurity element imparting n-type conductivity in a concentration range of 1 × 10 ^{18 to} 5 × 10 ¹⁹ / cm ³ is formed in the low-concentration impurity region overlapping with the first conductive layer. The impurity element imparting n-type is added to the high concentration impurity region in a concentration range of 1 × 10 ^{19 to} 5 × 10 ²¹ / cm ³ .

 Needless to say, by setting the acceleration voltage to be appropriate, the second and third doping processes can be performed in a single doping process to form the low-concentration impurity region and the high-concentration impurity region.

Next, after removing the resist mask, a new resist mask is formed and a fourth doping process is performed. By this fourth doping treatment, impurity regions 309 and 310 are formed in which an impurity element imparting a conductivity type opposite to the one conductivity type is added to the semiconductor layer that becomes the active layer of the p-channel TFT. Using the first and second conductive layers as masks against the impurity element, an impurity element imparting p-type is added to form an impurity region in a self-aligning manner. In this embodiment, the impurity regions 309 and 310 are formed by an ion doping method using diborane (B ₂ H ₆ ). In the fourth doping process, the semiconductor layer for forming the n-channel TFT is covered with a resist mask. Phosphorus is added to the impurity regions at different concentrations by the first to third doping treatments, and the concentration of the impurity element imparting p-type is set to 1 × 10 ^{19 to} 5 × 10 ^{21 in} any of the regions. By performing the doping process so as to be atoms / cm ³ , no problem arises because it functions as the source region and drain region of the p-channel TFT.

  Through the above steps, impurity regions are formed in the respective semiconductor layers.

Next, the resist mask is removed, and an insulating film 326 is formed as a passivation film. At this time, an insulating film may be formed also in the sealing material formation region. In this embodiment, the insulating film 320 is formed in the same material and in the same process as the insulating film 326 in the sealing material formation region (FIG. 17A). As this insulating film 326, a plasma CVD method or a sputtering method is used. The insulating film containing silicon is used with a thickness of 100 to 200 nm. Needless to say, the insulating films 326 and 320 are not limited to silicon oxynitride films, and other insulating films containing silicon may be used as a single layer or a stacked structure. In this embodiment, silicon nitride formed by a sputtering method is used. Ar in the film has a concentration of about 5 × 10 ^{18 to} 5 × 10 ²⁰ atoms / cm ³ . Since it is necessary to make the structure under the sealing material uniform, it is desirable to form the insulating film uniformly over the entire region where the sealing material is formed.

  Further, a heat treatment is performed at 300 to 550 ° C. for 1 to 12 hours in a nitrogen atmosphere to perform a step of hydrogenating the semiconductor layer. Preferably, it carries out at 400-500 degreeC. This step is a step of terminating dangling bonds in the semiconductor layer with hydrogen contained in the insulating film 326. In this embodiment, heat treatment is performed at 410 ° C. for 1 hour.

 The insulating films 326 and 320 are formed of silicon nitride, silicon oxide, silicon oxynitride (SiON), silicon nitride oxide (SiNO), aluminum nitride (AlN), aluminum oxynitride (AlON), or nitride having a nitrogen content higher than the oxygen content. It is formed of a material selected from substances including aluminum oxide (AlNO) or aluminum oxide, diamond-like carbon (DLC), and nitrogen-containing carbon film (CN). In addition, a skeleton structure is formed by a bond of silicon (Si) and oxygen (O), and at least one of a material containing at least hydrogen as a substituent, or fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent. A material (typically a siloxane polymer) may be used.

  In the present invention, the silicon oxynitride (SiON) film includes Si at 25 to 35 atomic%, oxygen at 55 to 65 atomic%, nitrogen at 1 to 20 atomic%, and hydrogen at 0.1 to 10 atomic%. Show what will be. In addition, as a silicon nitride oxide (SiNO) film, a film containing Si of 25 to 35 atomic%, oxygen of 15 to 30 atomic%, nitrogen of 20 to 35 atomic%, and hydrogen of 15 to 25 atomic% is shown.

  In order to activate the impurity element, heat treatment, intense light irradiation, or laser light irradiation may be performed. Simultaneously with activation, plasma damage to the gate insulating film and plasma damage to the interface between the gate insulating film and the semiconductor layer can be recovered.

  Also in the top view of FIG. 17B, the conductive film 311 and the conductive film 312 are formed in the shape shown in the figure. Although not shown, an insulating film 326 which is a passivation film is formed on the entire surface in the pixel region. The insulating film 320 is similarly formed in the sealing region.

 Then, an insulating film 321 is formed over the insulating films 326 and 320 as an interlayer film. The insulating film 321 includes an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, etc.), a photosensitive or non-photosensitive organic tree material (organic resin material) (polyimide, acrylic, polyamide, polyimide amide, resist , Benzocyclobutene, and the like), or a laminate of these films can be used. In addition, a skeleton structure is formed by a bond of silicon (Si) and oxygen (O), and at least one of a material containing at least hydrogen as a substituent, or fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent. A material (typically a siloxane polymer) may be used. At this time, an insulating film may be formed also in the sealing material formation region. In this embodiment, the insulating film 323 is formed in the sealing material formation region in the same material and in the same process as the insulating film 321.

 As the photosensitive material, either a negative type that becomes insoluble in an etchant by photosensitive light or a positive type that becomes soluble in an etchant by light can be used. In this embodiment, positive photosensitive acrylic that is a photosensitive organic resin material is used. In this case, it is preferable that only the upper end portion of the insulating film has a curved surface having a curvature radius (0.2 μm to 3 μm). After that, silicon nitride, silicon oxide, silicon oxynitride (SiON), silicon nitride oxide (SiNO), aluminum nitride (AlN), aluminum oxynitride (AlON), and nitrogen content are higher than oxygen content over the insulating film 350. A passivation film made of a large amount of aluminum nitride oxide (AlNO) or aluminum oxide, diamond-like carbon (DLC), or nitrogen-containing carbon film (CN) may be formed. In addition, a skeleton structure is formed by a bond of silicon (Si) and oxygen (O), and at least one of a material containing at least hydrogen as a substituent, or fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent. A material (typically a siloxane polymer) may be used.

  The insulating film 321, the insulating film 326, and the gate insulating film 306 are etched to form openings that reach the source region and the drain region. The opening may be formed by etching the interlayer film and then forming a mask again, or etching the insulating film 326 and the gate insulating film 306 using the etched insulating film 321 as a mask. A metal film is formed, and the metal film is etched to form source and drain electrodes 322 and wirings (not shown) that are electrically connected to the impurity regions. As the metal film, a film made of an element of aluminum (Al), titanium (Ti), molybdenum (Mo), tungsten (W), or silicon (Si) or an alloy film using these elements may be used. In this embodiment, a titanium film / silicon-aluminum alloy film / titanium film (Ti / Si—Al / Ti) is laminated to 100/350/100 nm, respectively, and then patterned and etched into a desired shape to form a source electrode, The drain electrode 322 and each wiring are formed. At this time, the conductive film 324 is also formed in the sealing material formation region in the same material and in the same process as the wiring. Any of the first to fourth embodiments may be applied as the wiring pattern. Since the conductive layer 324 is a dummy wiring that reduces the level difference in the sealing material formation region, it is necessary to be substantially electrically insulated. The conductive film 324 is formed over the insulating film 323 so as to partially overlap with the conductive films 318 and 319 formed in advance.

  Thereafter, the pixel electrode 325 is formed. In this embodiment, a pixel electrode 325 is formed by forming a transparent conductive film and etching it into a desired shape (FIG. 18A).

  As the transparent conductive film, a compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, or indium oxide can be used. Moreover, you may use what added the gallium to the said transparent conductive film. The pixel electrode 353 may be formed on a flat interlayer insulating film before forming the wiring. It is effective to flatten the step due to the TFT using a flattening film made of resin. Since the light emitting layer formed later is very thin, the presence of a step may cause a light emission failure. Therefore, it is desirable to planarize the pixel electrode before forming it so that the light emitting layer can be formed as flat as possible.

  As shown in FIG. 18B, a conductive film 322 used as a signal line (source line) is formed in the pixel region, and a pixel electrode 325 is formed in connection with the conductive film 322. Also in the sealing region, a conductive film 324 is formed over the conductive films 307 and 308 with an insulating film 323 that performs interlayer separation therebetween.

  The active matrix substrate provided with the TFT is completed through the processes as described above. In this embodiment, the n-channel TFT in the pixel region has a double gate structure in which two channel formation regions are formed. However, it has a single gate structure in which one channel formation region is formed or a triple gate structure in which three channel formation regions are formed. There may be. Also, the TFT of the driver circuit portion has a single gate structure in this embodiment, but may have a double gate structure or a triple gate structure.

  Note that not only the TFT manufacturing method shown in this embodiment, but also a top gate type (planar type), a bottom gate type (reverse stagger type), or two gate insulating films disposed above and below the channel region are provided. The present invention can also be applied to a dual gate type or other structure having a gate electrode.

   After forming the pixel electrode 325, an insulating film 331 is formed as shown in FIG. At this time, an insulating film may be formed also in the sealing material formation region. In this embodiment, the insulating film 337 is formed in the sealing material formation region using the same material and the same process as the insulating film 331.

 The insulating films 331 and 337 are made of an inorganic material (silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, etc.), a photosensitive or non-photosensitive organic tree material (organic resin material) (polyimide, acrylic, polyamide, polyimide amide). , Resist, benzocyclobutene, etc.), or a film made of a plurality of kinds, or a stack of these films. In addition, a skeleton structure is formed by a bond of silicon (Si) and oxygen (O), and at least one of a material containing at least hydrogen as a substituent, or fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent. A material (typically a siloxane polymer) may be used. In this embodiment, the insulating film 337 is formed in any sealing material formation region.

Note that since the insulating film 331 is an insulator, attention must be paid to electrostatic breakdown of the element during film formation. In this embodiment, carbon particles or metal particles are added to the insulating film that is a material of the insulating film 331 to lower the resistivity and suppress the generation of static electricity. At this time, the addition amount of carbon particles or metal particles may be adjusted so that the resistivity is 1 × 10 ⁶ to 1 × 10 ¹² Ωm (preferably 1 × 10 ⁸ to 1 × 10 ¹⁰ Ωm).

A light emitting layer 332 is formed on the pixel electrode 325. Although only one pixel is shown in FIG. 19, in this embodiment, light emitting layers corresponding to the respective colors R (red), G (green), and B (blue) are separately formed. In addition, each emission may be emission (fluorescence) when returning from the singlet excited state to the ground state, or emission (phosphorescence) when returning from the triplet excited state to the ground state. May be combined such that the two colors after fluorescence (or phosphorescence) are phosphorescence (or fluorescence). Only R may be phosphorescent, and G and B may be fluorescent. In this embodiment, a low molecular weight organic light emitting material is formed by a vapor deposition method. Specifically, a laminated structure in which a copper phthalocyanine (CuPc) film having a thickness of 20 nm is provided as a hole injection layer and a tris-8-quinolinolato aluminum complex (Alq ₃ ) film having a thickness of 70 nm is provided thereon as a light emitting layer. It is said. The emission color can be controlled by adding a fluorescent dye such as quinacridone, perylene, or DCM1 to Alq ₃ .

  However, the above example is an example of an organic light emitting material that can be used as a light emitting layer, and it is not absolutely necessary to limit to this. A light emitting layer (a layer for emitting light and moving carriers therefor) may be formed by freely combining a light emitting layer, a charge transport layer, or a charge injection layer. For example, in this embodiment, an example in which a low molecular weight organic light emitting material is used as the light emitting layer is shown, but a medium molecular weight organic light emitting material or a high molecular weight organic light emitting material may be used. Note that in this specification, an organic light-emitting material that does not have sublimation and has 20 or less molecules or a chain molecule length of 10 μm or less is referred to as a medium molecular organic light-emitting material. As an example of using a polymer organic light emitting material, a 20 nm polythiophene (PEDOT) film is provided by a spin coating method as a hole injection layer, and a paraphenylene vinylene (PPV) film of about 100 nm is provided thereon as a light emitting layer. Alternatively, a laminated structure may be used. If a PPV π-conjugated polymer is used, the emission wavelength can be selected from red to blue. It is also possible to use an inorganic material such as silicon carbide for the charge transport layer or the charge injection layer. Known materials can be used for these organic light emitting materials and inorganic materials.

Next, a cathode 333 made of a conductive film is provided on the light emitting layer 332. As the cathode, a material having a low work function (Al, Ag, Li, Ca, or an alloy thereof such as MgAg, MgIn, AlLi, CaF ₂ , or CaN) may be used. In this embodiment, a thin metal film (MgAg: film thickness: 10 nm) and a transparent conductive film (ITO (Indium Tin Oxide Alloy), 110 nm thick) are used as the cathode 333 so as to transmit light. A stack with an indium zinc oxide alloy, zinc oxide, tin oxide, indium oxide, or the like is used.

 When the cathode 333 is formed, the light emitting element 330 is completed. Note that the light emitting element 330 is formed of a pixel electrode (anode) 325, a light emitting layer 332, and a cathode 333. At this time, a stacked body made of the same material as the pixel electrode 325, the light emitting layer 332, and the cathode 333 constituting the light emitting element 330 may also be formed in the sealing material forming region in the same step. . At this time, it is important to form a laminated body in other seal formation regions in the same manner and to have a similar cross-sectional structure. Thereby, the height (film thickness) of the laminated body becomes uniform in the sealing material forming region.

 It is effective to provide the passivation film 334 so as to completely cover the light emitting element 330. At this time, the passivation film 334 may be formed of the same material as that of the passivation film 334, and the passivation film may also be formed in the seal material formation area in the same process. In this embodiment, the insulating film 336 is formed of the same material as that of the passivation film 334 in the same process. Examples of the passivation film include silicon nitride, silicon oxide, silicon oxynitride (SiON), silicon nitride oxide (SiNO), aluminum nitride (AlN), aluminum oxynitride (AlON), and oxynitride in which the nitrogen content is higher than the oxygen content The insulating film includes aluminum (AlNO) or aluminum oxide, diamond-like carbon (DLC), and a nitrogen-containing carbon film (CN), and a single layer or a combination of the insulating films can be used. In addition, a skeleton structure is formed by a bond of silicon (Si) and oxygen (O), and at least one of a material containing at least hydrogen as a substituent, or fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent. A material (typically a siloxane polymer) may be used.

  At this time, it is preferable to use a film with good coverage as the passivation film, and it is effective to use a carbon film, particularly a DLC film. Since the DLC film can be formed in a temperature range from room temperature to 100 ° C., it can be easily formed over the light-emitting layer 332 having low heat resistance. In addition, the DLC film has a high blocking effect against oxygen and can suppress oxidation of the light-emitting layer 332. Therefore, the problem that the light emitting layer 332 is oxidized during the subsequent sealing process can be prevented.

 In the sealing region, the sealing material 335 is formed on the stack formed in the sealing material formation region. In this embodiment, the sealing material 335 has a structure that covers the end portion of the display device, but the present invention is not limited to this. However, when the structure of this embodiment is adopted, the intrusion of moisture from the cross section is blocked by the sealing material, so that the deterioration of the light emitting element can be prevented and the reliability of the light emitting display device is improved. Similarly, the end portion of the light emitting display device may be covered with a dummy wiring or the like formed in the sealing material formation region. Also in this case, there is an effect of preventing deterioration of the light emitting display device and improving reliability. The sealant 335 is not particularly limited, and it is typically preferable to use a visible light curable resin, an ultraviolet curable resin, or a thermosetting resin. In this embodiment, a thermosetting epoxy resin is used. In this embodiment, the cover member 340 is formed by forming a carbon film (preferably a DLC film or a CN film) on both surfaces of a glass substrate, a quartz substrate, a plastic substrate (including a plastic film), or a flexible substrate. In addition to the carbon film, an aluminum film (AlON, AlN, AlO, etc.), SiN, or the like can be used. Thus, a dual emission type light emitting display device having a structure as shown in FIG. 19 is completed. FIG. 14 shows a more detailed view of the light-emitting display device manufactured in this example.

  As shown in FIG. 19B, a light emitting layer 322 and a cathode 333 which is a counter electrode are formed on the pixel electrode 325 in the pixel region. Although not shown, a passivation film 334 is also formed in the pixel region. Insulating films 337 and 336 are also formed in the sealing region, and a sealing material 335 is formed on the laminated structure. As described above, by providing a laminated structure including a supporting member such as a danny wiring under the sealing material, a step in the sealing material forming region can be eliminated and the substrate spacing can be made uniform. Therefore, sealing can be performed with good airtightness.

  Note that it is effective to continuously perform the process from the formation of the insulating film 331 to the formation of the passivation film 334 using a multi-chamber type (or in-line type) film formation apparatus without releasing to the atmosphere. is there. Further, it is possible to continuously process the process of further developing and bonding the cover material 340 without releasing to the atmosphere.

  Further, by providing an impurity region overlapping with the gate electrode with an insulating film interposed therebetween, an n-channel TFT that is resistant to deterioration due to the hot carrier effect can be formed. Therefore, a highly reliable display device can be realized.

  Further, in this embodiment, only the configuration of the pixel portion and the drive circuit is shown. However, according to the manufacturing process of this embodiment, other logic circuits such as a signal dividing circuit, a D / A converter, an operational amplifier, and a γ correction circuit are provided. Can be formed on the same insulator, and a memory and a microprocessor can also be formed.

 According to the present invention, since the distance between the substrates can be maintained uniformly, display unevenness due to interference or the like is eliminated, and a highly reliable light-emitting display device with excellent image display and high yield can be manufactured.

  In this embodiment, a light-emitting display device having a different structure for correcting the substrate interval in the light-emitting display device of the present invention will be described.

    FIG. 15 is a sectional view showing an example of the light emitting display device of the present invention in this embodiment. As in the first embodiment, a film forming the light-emitting display device is stacked in the region where the sealant 1535 is formed. The stacked body includes insulating films 1536, 1551, 1554, 1556 and 1557, and conductive films 1552 and 1553 which are dummy wirings. The element substrate 1500 and the counter substrate 1540 are attached to each other with the sealant 1535. This laminated body is formed over the entire sealing material forming region. Since the cross-sectional configuration along the edge of the formation region of the sealing material 1535 is uniform, the level difference of the sealing material can be made uniform.

 In this embodiment, the support member 1560 shown in FIG. 15 is formed inside the sealant forming region of the light emitting display device. As long as the function for adjusting the distance between the substrates can be fulfilled, the substrate may be formed of any material including inorganic materials and organic materials, and a columnar or spherical support member may be used. Moreover, although an electroconductive material or an insulating material may be used, when using an electroconductive material, it is necessary to be electrically insulated. The height of the supporting member is higher than that of the laminated film formed on the element substrate, and is preferably the same as the filler included in the sealing material. In this embodiment, a columnar spacer is formed using acrylic which is the same material as the insulating film 1531.

 The supporting member 1560 may be a film selected from a conductive material and an insulating material, or a film made of a plurality of types. As the conductive thin film, a film made of one or more elements selected from Al, Ti, Mo, W, or Si may be used. As the insulating thin film, one selected from silicon nitride, silicon oxide, silicon nitride oxide, aluminum nitride, aluminum oxynitride, aluminum nitride oxide, aluminum oxide, diamond-like carbon (DLC), nitrogen-containing carbon film (CN), or Multiple types of films can be used.

 As another insulator, a film containing one kind or plural kinds of materials selected from polyimide, acrylic, benzocyclobutene, and polyamide may be used. In addition, a skeleton structure is formed by a bond of silicon (Si) and oxygen (O), and at least one of a material containing at least hydrogen as a substituent, or fluorine, an alkyl group, or an aromatic hydrocarbon as a substituent. A material (typically a siloxane polymer) may be used.

  Further, the formation location and number of support members 1560 which are not formed under the seal material of this embodiment, which are substrate interval correction means, may be set as appropriate, and can be freely designed according to the size of the substrate. it can. However, the place where the support means is formed requires a larger pressure when bonding the substrates than other places, so it is necessary to set the formation place so that the lower wiring is not damaged by the pressure or the wiring is not short-circuited. is there. Forming a supporting member in a region that hinders display such as a pixel portion is not desirable because the opening is narrowed. In addition, since the support means 1560 determines the maximum height on the element substrate side, the support means 1560 is formed so as to have a constant height on the element substrate side, regardless of whether it is singular or plural.

  Since the support unit 1560 has a maximum height on the element substrate side, the counter substrate 1540 is supported by the support unit 1560 and is bonded to each other by the sealant 1535. Since the support means 1560 has a uniform height, the substrate interval between the element substrate 1500 and the counter substrate 1540 can be made uniform. In this embodiment, the sealing material is formed only in the sealing region. However, the sealing material may be formed on the entire surface inside the sealing material region of the light emitting display device, or may be partially formed. Since the distance between the substrates is made uniform according to the present invention, it is possible to display an image with high resolution without display unevenness, regardless of how the sealing material is formed.

  In this embodiment, a plurality of support members are provided in the lower portion of the sealing material and inside the sealing material forming region, and the substrate interval is adjusted, but either one may be used as in the first embodiment. When the support member is formed inside the sealing material region as in this embodiment, the substrate interval can be adjusted inside the display unit. Therefore, even when the substrate is increased in size, the substrate is not bent and a uniform substrate interval can be maintained, and a large display device with high image quality can be manufactured.

 According to the present invention, since the distance between the substrates can be maintained uniformly, display unevenness due to interference or the like is eliminated, and a highly reliable light-emitting display device with excellent image display and high yield can be manufactured.

 In this example, an example of a single-side emission type in the light-emitting display device manufactured in Example 1 will be described with reference to FIGS.

 In FIG. 20A, 1900 is an element substrate, 1956 is an electrode, 1953 is a pixel electrode, 1913 is a light emitting layer, 1914 and 1923 are cathodes, 1915 is a light emitting element, 1922 is a passivation film, and 1921 is a counter substrate.

  As in the first embodiment, a film forming the light emitting display device is stacked in the region where the sealant 1917 is formed. The stacked body includes insulating films 1920, 1923, 1924, 1918, and 1919, and conductive films 1921, 1922, and 1925 which are dummy wirings. The element substrate 1900 and the counter substrate 1921 are attached to each other with a sealant 1917. This laminated body is formed over the entire sealing material forming region. Since the cross-sectional configuration along the edge of the region where the sealing material 1917 is formed becomes uniform, the level difference of the sealing material can be made uniform. Therefore, since the substrate interval can be made uniform, a high-quality image can be displayed. The present invention is particularly effective in a top emission type light emitting display device in which light is emitted from the counter substrate side as described above.

The light-emitting display device in FIG. 20A is a single-sided emission type and has a structure of emitting light from the top in the direction of the arrow. In this case, the pixel electrode 1953 corresponds to an anode and is a reflective metal film, and the reflective metal film is a metal having a high work function such as platinum (Pt) or gold (Au) in order to function as an anode. Use a membrane. Further, since these metals are expensive, they may be stacked on an appropriate metal film such as an aluminum film or a tungsten film, and may be a pixel electrode in which platinum or gold is exposed at least on the outermost surface. The cathode 1914 is a thin metal film (preferably 10 to 50 nm), and a material containing an element belonging to Group 1 or Group 2 of the periodic table having a small metal film work function in order to function as a cathode (for example, Al, Ag, Li, Ca, or an alloy thereof such as MgAg, MgIn, AlLi, CaF ₂ , or CaN) is used. Further, an oxide conductive film (typically an ITO film) which is the cathode 1923 is provided over the cathode 1914, and a passivation film 1922 is provided thereover.

  In the case of the structure shown in FIG. 20A, light emitted from the light-emitting element is reflected by the pixel electrode 1953 and emitted through the cathodes 1914 and 1923 and the like.

 In FIG. 20B, 1800 is an element substrate, 1856 is an electrode, 1853 is a pixel electrode, 1813 is a light emitting layer, 1814 is a cathode, 1815 is a light emitting element, 1822 is a passivation film, and 1821 is a counter substrate.

  As in the first embodiment, a film forming the light-emitting display device is stacked in a region where the sealant 1817 is formed. The stacked body includes insulating films 1820, 1823, 1824, 1818, and 1819, and conductive films 1821, 1822, and 1825 which are dummy wirings. The element substrate 1800 and the counter substrate 1821 are attached to each other with a sealant 1817. This laminated body is formed over the entire sealing material forming region. Since the cross-sectional configuration along the edge of the region where the sealing material 1817 is formed is uniform, the level difference of the sealing material can be uniform.

  The light-emitting display device in FIG. 20B is also a single-sided emission type and has a structure in which the lower surface is emitted in the direction of the arrow. In this embodiment, a pixel electrode 1853 corresponding to an anode is formed by forming a transparent conductive film and etching it into a desired shape. As the transparent conductive film, a compound of indium oxide and tin oxide, a compound of indium oxide and zinc oxide, zinc oxide, tin oxide, or indium oxide can be used. The cathode 1814 preferably uses a metal film (thickness: 50 nm to 200 nm) made of Al, Ag, Li, Ca, or an alloy thereof, MgAg, MgIn, AlLi. A passivation film 1822 is provided on the cathode 1814.

  In the case of the structure shown in FIG. 20B, light emitted from the light-emitting element passes through the pixel electrode 1815 and is emitted from the substrate 1800 side.

 According to the present invention, since the distance between the substrates can be maintained uniformly, display unevenness due to interference or the like is eliminated, and a highly reliable light-emitting display device with excellent image display and high yield can be manufactured.

  Various display devices can be manufactured by applying the present invention. That is, the present invention can be applied to various electronic devices in which these display devices are incorporated in a display portion. The present invention is particularly effective for an electronic apparatus having a large display portion because the light emitting display device has an effect of uniforming the substrate interval and realizing high image quality. Examples thereof are shown in FIG.

  FIG. 16A illustrates a display device having a large display portion of 20 to 80 inches, for example, which includes a housing 2001, a support base 2002, a display portion 2003, a speaker portion 2004, a video input terminal 2005, and the like. The present invention is applied to manufacture of the display portion 2003. Such a large display device is so-called fifth generation (1000 × 1200 mm), sixth generation (1400 × 1600 mm), seventh generation (1500 × 1800 mm) in terms of productivity and cost. It is preferable to manufacture using a large substrate having a meter angle. When the present invention is used, even on such a large substrate, a high-definition and high-quality image can be displayed without uneven display.

  FIG. 16B illustrates a laptop personal computer including a main body 2101, a housing 2102, a display portion 2103, a keyboard 2104, an external connection port 2105, a pointing mouse 2106, and the like. The present invention is applied to manufacturing the display portion 2103. By using the present invention, it is possible to display a high-definition and high-quality image without display unevenness.

  FIG. 16C shows an image reproducing device (specifically, a DVD reproducing device) provided with a recording medium, which includes a main body 2201, a housing 2202, a display portion A 2203, a display portion B 2204, and a recording medium (DVD etc.) reading portion 2205. , An operation key 2206, a speaker portion 2207, and the like. The display portion A 2203 mainly displays image information, and the display portion B 2204 mainly displays character information. The present invention is applied to the production of the display portions A, B 2203, and 2204. By using the present invention, a high-definition and high-quality image can be displayed without display unevenness even on a large screen.

  FIG. 16D illustrates a display device having a large display portion of 20 to 80 inches, for example, which includes a housing 2300, a keyboard portion 2301, which is an operation portion, a display portion 2302, a speaker portion 2303, and the like. The present invention is applied to manufacturing the display portion 2302. Even if the substrate is bent by providing the spacers, a fixed gap between the two laminated glasses can be maintained, so that a high-definition and high-quality image can be displayed without any display unevenness without changing the color tone.

  As described above, the applicable range of the present invention is extremely wide, and the present invention can be applied to manufacture of electric appliances in various fields. Moreover, it can be freely combined with the above embodiment modes and examples.

1 is a top view of a light-emitting display device of the present invention. The figure which shows the structure of this invention. The figure which shows the structure of this invention. The figure which shows the structure of this invention. The figure which shows the structure of this invention. The figure which shows the structure of this invention. The figure which shows the structure of this invention. The figure which shows the structure of this invention. The figure which shows the structure of this invention. The figure which shows the structure of this invention. The top view of the conventional display apparatus. The top view of the conventional display apparatus. FIG. 6 is a cross-sectional view illustrating a manufacturing process of a light-emitting display device of the present invention. 1 is a cross-sectional view of a light-emitting display device of the present invention. 1 is a cross-sectional view of a light-emitting display device of the present invention. FIG. 6 illustrates an example of a display device of the present invention. FIG. 6 is a cross-sectional view illustrating a manufacturing process of a light-emitting display device of the present invention. FIG. 6 is a cross-sectional view illustrating a manufacturing process of a light-emitting display device of the present invention. FIG. 6 is a cross-sectional view illustrating a manufacturing process of a light-emitting display device of the present invention. 1 is a cross-sectional view of a light-emitting display device of the present invention.

Claims (17)

A first substrate having a matrix circuit and a light emitting element using a light emitting material;
A second substrate facing the first substrate;
A sealing material for fixing the first substrate and the second substrate;
In the light-emitting display device having a wiring that is electrically connected to the outside of the sealing material across the lower portion of the sealing material in the first substrate,
In the first substrate, in the region where the sealing material is formed, at least one layered structure is formed below the sealing material,
The light-emitting display device, wherein the stacked structure is electrically insulated.  2. The light emitting display device according to claim 1, wherein the laminated structure includes a support member made of at least the same material as the wiring of the matrix circuit. 3. The matrix circuit according to claim 1, wherein the matrix circuit has a layered wiring structure that is insulated layer by layer by an insulating film,
The light-emitting display device, wherein the multilayer structure has at least the same multilayer structure as the layered wiring structure.  4. The light-emitting display device according to claim 1, wherein the maximum value of the thickness of the stacked structure is substantially equal to the maximum values of the thicknesses of the matrix circuit and the light-emitting element. Pixels arranged in a matrix and separated from each other by signal lines and scanning lines separated from each other by the first insulating film, and pixels separated from the signal lines by the second insulating film. A matrix circuit having electrodes;
A first substrate having a light emitting element using a light emitting material;
A second substrate facing the first substrate;
A sealing material surrounding the matrix circuit and fixing the first substrate and the second substrate;
In the light-emitting display device having a wiring that is electrically connected to the outside of the sealing material across the lower portion of the sealing material in the first substrate,
In the first substrate, in the seal material forming region, a first support member made of at least the same material as the scan line is formed below the seal material, the first insulating film, and the signal line. The second support member made of the same material and the second insulating film are laminated in different layers,
The light-emitting display device, wherein the stacked structure is electrically insulated.  6. The light emitting display device according to claim 5, wherein the stacked structure does not overlap an end surface of the first support member and an end surface of the second support member.  6. The light-emitting display device according to claim 5, wherein the multilayer structure has the same multilayer structure as at least a region where the signal line and the scanning line overlap in the matrix circuit.  8. The light-emitting display device according to claim 5, wherein the first support member has a shape meandering under the sealing material. 9. A first substrate having a matrix circuit and a light emitting element using a light emitting material;
A second substrate facing the first substrate;
A sealing material for fixing the first substrate and the second substrate;
In the method for manufacturing a light-emitting display device having a wiring that crosses a lower portion of the sealing material in the first substrate and is electrically connected to the outside of the sealing material,
In the first substrate, in a region where the seal material is formed, at least one layered structure is formed below the seal material,
A method for manufacturing a light-emitting display device, wherein the stacked structure is formed by being electrically insulated.  10. The method for manufacturing a light-emitting display device according to claim 9, wherein the stacked structure includes at least a support member made of the same material as the wiring of the matrix circuit. The matrix circuit according to claim 9 or 10, wherein the matrix circuit is formed of a layered wiring structure that is insulated for each layer by an insulating film,
The method for manufacturing a light-emitting display device is characterized in that the stacked structure is formed to be at least the same stacked structure as the layered wiring structure.  12. The light emitting display according to claim 9, wherein a maximum value of the thickness of the stacked structure is formed to be substantially equal to a maximum value of the thickness of the matrix circuit and the light emitting element. Device fabrication method. Pixels arranged in a matrix and separated from each other by signal lines and scanning lines separated from each other by the first insulating film, and pixels separated from the signal lines by the second insulating film. A matrix circuit having electrodes;
A first substrate having a light emitting element using a light emitting material;
A second substrate facing the first substrate;
A sealing material surrounding the matrix circuit and fixing the first substrate and the second substrate;
In the method for manufacturing a light-emitting display device having a wiring that crosses a lower portion of the sealing material in the first substrate and is electrically connected to the outside of the sealing material,
In the first substrate, the first support member made of at least the same material as the scanning line is formed at the lower part of the sealing material in the sealing material forming region, the first insulating film, and the signal line. A second support member made of the above material and the second insulating film are formed in different layers in a stacked structure,
A method for manufacturing a light-emitting display device, wherein the stacked structure is formed by being electrically insulated.  14. The method for manufacturing a light-emitting display device according to claim 13, wherein the stacked structure is formed so that an end surface of the first support member and an end surface of the second support member do not overlap.  14. The light-emitting display device according to claim 13, wherein the stacked structure is formed to have the same stacked structure as a region where at least the signal line and the scan line overlap in the matrix circuit. Method.  14. The method for manufacturing a light-emitting display device according to claim 13, wherein the first support member is formed to have a shape meandering under the sealant. In Claim 13, the first support member is formed of the same material as the signal line and in the same process,
The method for manufacturing a light-emitting display device, wherein the second supporting member is formed of the same material as the scanning line and in the same process.

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