JP2005072041A - Solid-state image pickup device and imaging system using same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To achieve high-speed photographing while the occurrence of spherical aberration and shading by an imaging lens is greatly released even on the imaging surface of any element in a lamination type solid-state image pickup device, where a number of solid-stage image pickup element units are laminated. <P>SOLUTION: The lamination type solid-state image pickup device 11a is composed by laminating in steps so that a flat chip 11 is laminated in steps for arrangement in the recess of a package 10 and the upper surface in which a light reception surface 13 is arranged is exposed partially in the chip 11. A pair of lamination type solid-state image pickup devices 11a composes a terrace paddy field type solid-state image pickup element 12 so that the steps oppose each other. The chip 11 at the lowest section is joined to a junction surface 10a comprising an inner bottom surface in the package 10. A thickness (t) in the chip 11 is set to be within the range of the depth of focus in the imaging lens. The upper end at the step side of each chip 11 is arranged near an arc 16 with a main point 17 of the imaging lens 14 as a center and nearly focal distance 15 of the imaging lens 14 as a radius. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a solid-state imaging device in which flat solid-state imaging device units (chips) are stacked in a stepped manner, and an imaging system using the solid-state imaging device. The present invention relates to a solid-state imaging device and an imaging system that are improved so as to be inside.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, there is a high demand for development of an image sensor suitable for high-speed shooting, and in particular, a solid-state image sensor for high-speed shooting with low noise and high accuracy is desired.
[0003]
In response to such demands, the inventor of the present application superimposes a plurality of flat plate-like solid-state imaging device units (chips) in a staircase pattern so as to partially expose the light receiving surface, thereby achieving low noise, high accuracy, and high speed. A multilayer solid-state imaging device (multilayer CCD) capable of continuous imaging has been developed and disclosed (Patent Document 1). Patent Document 1 also discloses a solid-state image pickup device called a terraced-type solid-state image pickup device in which a pair of stacked solid-state image pickup devices are configured so that stepped portions face each other.
[0004]
[Patent Document 1]
Japanese Patent Laid-Open No. 2000-286404
[Problems to be solved by the invention]
However, since the solid-state imaging device described in Patent Document 1 is formed by stacking several chips or more, even if each chip is formed as thin as possible (for example, about 30 μm), the total thickness is, for example, about 200 μm or more. Therefore, the distance from the imaging lens for condensing on the light receiving surface of the solid-state image sensor varies greatly for each chip light receiving surface, and depending on the position of the light receiving surface, large aberrations and shading may occur. End up. As a result, an unacceptable distortion may occur in the obtained image.
[0006]
The present invention has been made in view of such circumstances, and in a solid-state solid-state image pickup device in which a large number of solid-state image pickup device units are stacked, the occurrence of spherical aberration and shading due to the image pickup lens on the image receiving surface of any element is greatly increased. It is an object of the present invention to provide a solid-state imaging device including a solid-state imaging device for high-speed imaging and an imaging system using the same.
[0007]
[Means for Solving the Problems]
The above object is to form each solid-state image sensor unit constituting the multilayer solid-state image sensor thinly so that the thickness thereof is within the focal depth range of the imaging lens, and to make a step of the solid-state image sensor stacked in a staircase pattern. And the image receiving surface of each solid-state imaging device unit is configured to be arranged in the vicinity of the same arc with the principal point position of the imaging lens as the center and the approximate focal length of the imaging lens as the radius. Is done.
[0008]
As a result, each image-receiving surface is substantially within the focal depth of the imaging lens, so that the image obtained by the solid-state imaging device can have extremely small spherical aberration and shading.
[0009]
That is, the solid-state imaging device of the present invention is a solid-state imaging device that receives an incident ray bundle incident through an imaging lens.
A flat solid-state imaging device unit is stacked in a stepped manner so that at least a part of the upper surface on which the image receiving surface is arranged is exposed, and the step of the solid-state imaging device unit stacked in the stepped shape is the imaging Adjust the thickness of the solid-state imaging device unit so that it is within the range of the focal depth of the lens,
The staircase side upper surface edge of each solid-state image sensor unit has a circular arc centered on the principal point of the image pickup lens and having a radius of approximately the focal length of the image pickup lens in a cross section orthogonal to the staircase side upper surface edge. A multilayer solid-state imaging device set to be arranged in the vicinity is provided.
[0010]
Here, the “incident beam bundle” is usually visible light, but may be other infrared rays, ultraviolet rays, X-rays, electron beams, ion beams, neutron beams, or even ultrasonic waves. That is, the conversion unit for each solid-state imaging device converts an infrared image, an ultraviolet image, an X-ray image, an electron beam image, an ion beam image, a neutron beam image, an ultrasonic image, etc. into an electric signal in addition to a visible light image. There may be.
The “substantially focal length” means that the focal length is within the range obtained by adding the focal depth.
[0011]
Further, a terraced type in which a pair of the stacked solid-state imaging devices are arranged so that the respective staircase portions face each other and the arcs of the pair of stacked solid-state imaging devices are common to each other A solid-state imaging device can be provided.
[0012]
Furthermore, it is possible to configure to include a plurality of sets of the rice terrace type solid-state imaging device.
[0013]
Moreover, it is preferable that the solid-state imaging device unit has a thickness of about 50 μm or less and is configured to have flexibility.
[0014]
Further, the stacked solid-state image sensor or the terraced solid-state image sensor is bonded to the inner bottom surface of the package, and the inner bottom surface of the package is formed into a flat shape, or the inner bottom surface of the package is the stacked solid-state image sensor or It is formed so as to be inclined in the same direction as the staircase portion inclination direction of the terraced solid-state image sensor, or the inner bottom surface of the package is along the inclination of the stacked solid-state image sensor or the staircase portion of the terraced solid-state image sensor. It can be formed to be a cylindrical or spherical curved surface.
[0015]
The imaging system of the present invention includes any one of the solid-state imaging devices described above and an imaging lens having a function of converging an incident beam bundle on an image receiving surface of the solid-state imaging device.
[0016]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, a solid-state imaging device according to an embodiment of the present invention will be described with reference to the drawings.
In the following, the solid-state imaging device of the present invention will be described with reference to five embodiments. The basic configuration will be described in the first embodiment, and only other parts different from the first embodiment will be described in the other embodiments. To do.
[0017]
(First embodiment)
1, 2, and 3 are a front sectional view (sectional view taken along line AA in FIG. 3) and a side sectional view (cross section taken along line BB in FIG. 3) showing the solid-state imaging device according to the first embodiment of the present invention. FIG.
[0018]
As shown in FIGS. 1 to 3, the solid-state imaging device of the present embodiment is configured by stacking chips 11, which are flat solid-state imaging device units, in a stepped shape in a recess of a package 10. The plurality of chips 11 are stacked stepwise so as to expose at least a part of the upper surface on which the light receiving surface 13 is disposed to form a stacked solid-state imaging device 11a, and a pair of stacked solid-state elements 11a. The image sensor 11a constitutes a terraced solid-state image sensor 12 such that the respective staircase portions face each other.
[0019]
Further, the lowermost chip 11 is bonded to a bonding surface 10 a formed from the inner bottom surface of the package 10.
Further, the steps of the chips 11 stacked in a step shape, that is, the thickness t of the chips 11 is formed within a range of the focal depth of an imaging lens (14 in FIG. 4) to be described later, for example, 50 μm, preferably 30 μm. Yes.
[0020]
Further, as shown in FIG. 4, the step-side upper surface edge portion of each chip 11 is centered on the principal point 17 of the imaging lens 14 in the cross section orthogonal to the step-side upper surface edge portion, and is substantially in focus. It is set so as to be arranged in the vicinity of an arc (actually, a cylindrical surface in the first embodiment) 16 having a radius of the distance 15. The solid-state imaging device and the imaging lens 14 described above constitute an imaging system according to the embodiment of the present invention.
[0021]
The chip 11 described above has a light receiving area in which a plurality of light receiving portions are arranged in a matrix, and the basic structure thereof is the same as that of a known solid-state imaging device. The structure of such a solid-state imaging device is described in detail, for example, in Japanese Patent Application Laid-Open No. 2000-286404 by the inventors of the present application. That is, photodiodes that are conversion units are arranged in one row along one side of each chip 11 (side extending in the left-right direction in FIG. 2). Each photodiode is connected to a linear vertical CCD transfer path, which is an electric signal storage unit, and each vertical CCD transfer path includes a plurality of CCD unit elements. These photodiodes and the vertical CCD transfer path constitute a parallel processing unit.
[0022]
Further, the package 10 is formed of, for example, plastic (it can be formed of other materials such as ceramics), and as described above, the chip 11 is bonded to and stored in the bonding surface 10a that is the inner bottom surface of the recess. It has become. In addition, a transparent cover glass is attached to the open end surface of the package 10, thereby ensuring the internal airtightness of the package 10. Although not shown in the drawing, a plurality of metal leads are arranged at the lower end of the package 10 so as to protrude, and an electrode electrically connected to these metal leads is provided inside the package 10. Is provided. This electrode is electrically connected to the chip 11 by a bonding wire.
[0023]
In addition, the thickness of each chip 11 is chemically mechanically polished on the back side of the chip 11 so that, when stacked, the step is within a range of the focal depth of the imaging lens 14, for example, 30 μm. The chip 11 is given flexibility. The method for polishing the chip 11 is not particularly limited, and for example, a “chemical mechanical grinder” described in Japanese Patent Application Laid-Open No. 2001-156278 is used. In addition, this polishing is generally performed on a semiconductor wafer before cutting out chips.
[0024]
Further, when the lowermost chip 11 and the package 10 are bonded, an adhesive is applied to the back surface side of the chip 11 or the bonding surface 10a of the package 10, and the hole provided in the bottom of the package 10 is connected to a suction device. Then, the chip 11 is sucked to the bonding surface 10 a and the chip 11 is bonded to the package 10. It is preferable that the hole is closed with a resin or the like after the manufacture of the solid-state imaging device is completed.
[0025]
In addition, each chip 11 is stacked using an adhesive, and in this case, the upper and lower chips 11 are connected to each other in FIG. 1 so that the light receiving surface 13 provided at the upper end of the chip 11 is exposed. Shift and move in the left / right direction. This bonding operation is usually performed before the chip 11 and the bonding surface 10a are bonded.
[0026]
After that, the electrodes of each chip 11 and the electrodes in the package 10 are electrically connected by wires. This is performed using, for example, a wire bonding apparatus. Finally, a cover glass is attached to the open end surface of the package 10 to seal the inside of the solid-state imaging device.
[0027]
As described above, in the apparatus of the present embodiment, the chips 11 to be stacked are polished extremely thinly by chemical mechanical polishing so as to have a thickness within the range of the depth of focus of the imaging lens 14, and are stacked in a stepped manner. Using the step of the stacked solid-state imaging device 11a, the light receiving surface 13 of each chip 11 is centered on the position of the principal point 17 of the imaging lens 14, and is in the vicinity of the same arc 16 with the approximate focal length of the imaging lens as a radius. Therefore, the light receiving surface 13 of each chip 11 is substantially within the depth of focus of the imaging lens 14, and in each acquired image, spherical aberration and shading of the imaging lens 14 are caused. The influence can be made extremely small.
[0028]
In addition, this makes it possible to reduce the design burden on the optical system and improve the function of the parallel processing unit on the chip 11.
That is, in addition to spherical aberration, shading and the like can be reduced to improve the image quality of the acquired image, the optical system such as the imaging lens can be miniaturized, and the element peripheral circuit is integrated in the parallel processing unit on the chip 11. It becomes possible to make it.
[0029]
Further, in the present embodiment, in the terraced solid-state image pickup device 12 configured such that the pair of stacked solid-state image pickup devices 11a are arranged so that the light receiving surfaces 13 face each other, as shown in FIG. Since the upper edge portion of each chip 11 is positioned in the vicinity, a large number of images with extremely small spherical aberration and shading can be acquired, and further high-speed imaging is possible.
[0030]
The focal length of the imaging lens 14 (the radius of curvature of the arc 16), the depth of focus, the number of chips 11 to be stacked, the thickness, and the length of the light receiving surface 13 are appropriately set within a range that satisfies the above-described conditions of the present invention. For example, when the thickness of the chip 11 is about 30 μm, the open F value of the imaging lens 14 is 2.0, the depth of focus is 30 μm, and the number of chips 11 to be stacked is, for example, 3 The length of the light receiving surface 13 is 1 mm, for example.
[0031]
(Second Embodiment)
5 and 6 are a front sectional view (a sectional view taken along the line CC in FIG. 6) and a plan view showing a solid-state imaging device according to the second embodiment of the present invention. In addition, in each member in FIG. 5 and FIG. 6, a symbol corresponding to each member in FIG. 1 to FIG. Is attached.
[0032]
The basic configuration of the solid-state imaging device according to the second embodiment is the same as that of the first embodiment described above. However, as shown in FIG. 5, the joint surface of the package 20 that joins the terraced solid-state image sensor 22. 20a is different in that it is an inclined surface descending toward the center line portion, with the center line portion in the left-right direction being the lowest position and the left and right ends in the figure being the highest position. This inclination angle is represented by θ in the figure. The inclination angle θ can be selected as appropriate, and is set to 1.7 °, for example.
[0033]
By tilting the bonding surface 20a in this way, the light receiving surface 23 of each chip 21 is slightly inward, and the radius of curvature of the arc 16 shown in FIG. 4 can be made smaller than that of the first embodiment. The imaging system can be reduced in size.
[0034]
(Third embodiment)
7 and 8 are a side cross-sectional view (cross-sectional view taken along the line DD of FIG. 8) and a plan view showing a solid-state imaging device according to the third embodiment of the present invention. 7 and 8, those corresponding to the members in FIGS. 1 to 3 are replaced by 3 in the tens place of the reference numerals attached to the members in FIGS. 1 to 3. Is attached.
[0035]
The basic configuration of the solid-state imaging device according to the third embodiment is the same as that of the first embodiment described above. However, as shown in FIG. 7, the bonding surface of the package 30 to which the terraced solid-state imaging device 32 is bonded. 30a is different in that it has a cylindrical curved surface in which the center line portion in the front-rear direction is the lowest position and the front and rear (left and right direction in FIG. 7; the same applies hereinafter) both ends are the highest positions. Since each chip 31 is thinly formed so as to have flexibility, it has a curved shape as shown in FIG. 7 following the shape of the joint surface 30a. The radius of curvature of the cylindrical curved surface is preferably matched with the focal length 15 of the imaging lens 14 shown in FIG. 4, but it is sufficient that the entire light receiving surface 33 is within the range of the approximate focal depth of the imaging lens 14. .
[0036]
Thereby, it is possible to further reduce the influence of spherical aberration and shading of the imaging lens 14 in the acquired image.
[0037]
In addition, the curvature is also given to the joint surface 30a of the package 30 in the diagonal direction of the package 30, and the light receiving surface 33 is formed so as to be within the focal depth of the imaging lens 14 in the diagonal direction. Further, the influence of spherical aberration and shading of the imaging lens 14 in the captured image can be made much smaller.
[0038]
(Fourth embodiment)
9 and 10 are a side sectional view (a sectional view taken along line EE in FIG. 10) and a plan view showing a solid-state imaging device according to the fourth embodiment of the present invention. In addition, in each member in FIG. 9 and FIG. 10, a symbol corresponding to each member in FIG. 1 to FIG. Is attached.
[0039]
The basic configuration of the solid-state imaging device according to the fourth embodiment is the same as that of the third embodiment described above. However, as shown in FIG. 9, the joint surface of the package 40 to which the terraced solid-state image sensor 42 is joined. 40a is different in that it has a stepped shape so that the center line portion in the front-rear direction is at the lowest position and both the front and rear ends are at the highest position. That is, the terraced solid-state image sensor 42 has steps in two directions that are perpendicular to the left and right direction and the front and rear direction.
[0040]
The amount of the step in the front-rear direction can be set as appropriate, but all the light receiving surfaces 43 may be formed so as to be positioned within the range of the focal depth of the imaging lens 14 also in the front-rear direction.
[0041]
Further, the radius of curvature of the arc 16 shown in FIG. 4 corresponding to the step in the front-rear direction is adjusted by polishing the back surface of the chip 41 so as to substantially match the focal length.
[0042]
Further, a step similar to the above is provided also in the diagonal direction of the package 40, and the light receiving surface 43 is formed so as to be within the focal depth of the imaging lens 14 in the diagonal direction as well. The influence of the spherical aberration and shading of the lens 14 can be made much smaller.
[0043]
(Fifth embodiment)
11 and 12 are a side sectional view (a sectional view taken along line FF in FIG. 12) and a plan view showing a solid-state imaging device according to the fifth embodiment of the present invention. In addition, in each member in FIG. 11 and FIG. 12, in the thing corresponding to each member in FIGS. 1-3, the code | symbol which replaced the sign of the code | symbol attached | subjected to each member in FIGS. 1-3 with 5 Is attached.
[0044]
The basic configuration of the solid-state imaging device according to the fifth embodiment is the same as that of the third embodiment described above. However, as shown in FIG. 11, the joint surface of the package 50 that joins the terraced solid-state imaging device 52. A terraced solid-state imaging device 50a has an inclined surface that descends toward the center line portion, with the center line portion in the left-right direction being the lowest position and the left and right ends in the drawing being the highest position. A difference is that the elements 12 are arranged so as to be opposed to each other across a center line in the front-rear direction. That is, the solid-state imaging device according to the fifth embodiment includes four stacked solid-state imaging elements 51a.
[0045]
Although the inclination angle of the inclined surface in the front-rear direction can be selected as appropriate, the entire light receiving surface 53 is formed so as to be located within the range of the focal depth of the imaging lens 14 also in the front-rear direction.
[0046]
Further, a step similar to that described above is provided in the diagonal direction of the package 50, and the light receiving surface 53 is formed so as to be within the focal depth of the imaging lens 14 in the diagonal direction, thereby capturing an image in the acquired image. The influence of the spherical aberration and shading of the lens 14 can be made much smaller.
[0047]
According to the solid-state imaging device according to the fifth embodiment, it is possible to achieve the same operational effects as the solid-state imaging device according to the third embodiment described above, but further compared to the solid-state imaging device according to the third embodiment. Thus, the bonding surface 50a can be easily manufactured.
[0048]
Further, a step similar to the above is also provided in the diagonal direction of the package 40, and the light receiving surface 53 is formed so as to be within the focal depth of the imaging lens 14 in the diagonal direction as well. The influence of spherical aberration and shading of the lens 14 can be made much smaller.
[0049]
The solid-state imaging device and imaging system of the present invention are not limited to those of the above-described embodiment, and various modifications can be made. For example, each chip may convert incident rays such as infrared rays, ultraviolet rays, X-rays, electron beams, ion beams, neutron beams, and ultrasonic waves into electrical signals. In this case, an infrared image, an ultraviolet image, an X-ray image, an electron beam image, an ion beam image, a neutron beam image, an ultrasonic image, and the like can be continuously captured at an ultra high speed.
[0050]
Further, in each of the above-described embodiments, at least one pair of stacked solid-state image pickup devices is arranged in a predetermined manner and provided with a terraced solid-state image pickup device. It is not excluded that the apparatus includes only the stacked solid-state imaging device.
[0051]
In addition, the solid-state imaging device of the present invention can include three or more terraced solid-state imaging devices.
[0052]
In the solid-state imaging device of the present invention, since the light receiving surface of each chip is arranged in a shape that approximates a curved surface, it can be applied to, for example, an artificial retina that mimics the function from the retina of the human eye to the brain. Is possible.
[0053]
There are a plurality of stages of processing until the brain recognizes the image formed on the retina. Of these processes, it is desirable to perform basic processing or simple processing by the imaging device itself. Therefore, if the structure is such that the chips are overlapped as in the above-described solid-state imaging device, these processes can be executed in the parallel processing unit, so that application to an artificial retina is extremely promising.
[0054]
Japanese Patent Application Laid-Open No. 2001-156278 discloses a technique in which a solid-state image sensor unit is curved and the distance from the image pickup lens to each part of the solid-state image sensor unit is made equal. Since it is not related to the image sensor and the entire thickness is also thin, it is not directly related to the present invention.
[0055]
【The invention's effect】
As described above, according to the solid-state imaging device of the present invention and the imaging system using the same, each stacked solid-state imaging device unit is polished extremely thinly to have a thickness within the range of the focal depth of the imaging lens. Using the steps of the solid-state image pickup devices stacked in a staircase shape, the image receiving surface of each solid-state image pickup device unit is centered on the position of the principal point of the image pickup lens, and the same arc 16 with the approximate focal length of the image pickup lens as the radius Therefore, the image-receiving surface of each solid-state image sensor unit is approximately within the depth of focus of the imaging lens, and the acquired image has the influence of spherical aberration of the imaging lens. Can be made extremely small. Moreover, the influence of shading can be made extremely small. For this reason, in designing the lens, the development burden for reducing spherical aberration and shading can be reduced and the manufacturing cost can be reduced as compared with the case where the conventional image receiving surface is a flat surface.
[0056]
In addition, the imaging system including the optical system can be reduced in size.
Furthermore, since the element peripheral circuit can be integrated into the parallel processing unit on the solid-state image sensor unit, the function of the parallel processing unit on the solid-state image sensor unit can be improved.
[0057]
[Brief description of the drawings]
1 is a front sectional view showing a solid-state imaging device according to a first embodiment of the present invention (a sectional view taken along line AA in FIG. 3);
2 is a side sectional view showing the solid-state imaging device according to the first embodiment of the present invention (sectional view taken along line BB in FIG. 3).
FIG. 3 is a plan view showing the solid-state imaging device according to the first embodiment of the present invention. FIG. 4 is a diagram for explaining the configuration of the solid-state imaging device according to the first embodiment of the present invention and an imaging system using the same. FIG. 5 is a front sectional view showing a solid-state imaging device according to a second embodiment of the present invention (a sectional view taken along the line CC in FIG. 6).
6 is a plan view showing a solid-state imaging device according to a second embodiment of the present invention. FIG. 7 is a side sectional view showing the solid-state imaging device according to the third embodiment of the present invention (the line DD in FIG. 8). (Cross section)
8 is a plan view showing a solid-state imaging device according to a third embodiment of the present invention. FIG. 9 is a side sectional view showing a solid-state imaging device according to the fourth embodiment of the present invention (the line EE in FIG. 10). (Cross section)
10 is a plan view showing a solid-state imaging device according to a fourth embodiment of the present invention. FIG. 11 is a side sectional view showing a solid-state imaging device according to the fifth embodiment of the present invention (the line F-F in FIG. 12). (Cross section)
FIG. 12 is a plan view showing a solid-state imaging device according to a fifth embodiment of the present invention.
10, 20, 30, 40, 50 Package 10a, 20a, 30a, 40a, 50a Bonding surface 11, 21, 31, 41, 51 Chip 11a, 21a, 31a, 41a, 51a Multilayer solid-state imaging device 12, 22, 32 , 42, 52 Terraced solid-state image sensor 13, 23, 33, 43, 53 Light receiving surface 14 Imaging lens 15 Focal length 16 Arc 17 Principal point

Claims (8)

In a solid-state imaging device that receives an incident ray bundle incident through an imaging lens,
The flat solid-state image sensor unit is laminated in a staircase shape so that at least a part of the upper surface on which the image receiving surface is arranged is exposed, and the step of the solid-state image sensor unit laminated in the staircase shape is Adjust the thickness of the solid-state imaging device unit so that it is within the range of the focal depth of the imaging lens,
The staircase side upper surface edge of each solid-state image sensor unit has a circular arc centered on the principal point of the image pickup lens and having a radius of approximately the focal length of the image pickup lens in a cross section orthogonal to the staircase side upper surface edge. A solid-state image pickup device comprising a stacked solid-state image pickup element set to be disposed in the vicinity. A terraced solid that is formed by arranging a pair of the stacked solid-state imaging devices so that the respective stair portions face each other and the arcs of the pair of stacked-type solid-state imaging devices are common to each other The solid-state imaging device according to claim 1, further comprising an imaging element. The solid-state imaging device according to claim 2, comprising a plurality of the terraced solid-state imaging devices. 4. The solid-state imaging device according to claim 1, wherein the solid-state imaging device unit has a thickness of about 50 μm or less and is configured to be flexible. 5. 5. The stacked solid-state imaging device or the terraced solid-state imaging device is joined to an inner bottom surface of a package, and the inner bottom surface of the package is formed in a flat shape. The solid-state imaging device according to claim 1. The stacked solid-state image sensor or the terraced solid-state image sensor is joined to the inner bottom surface of the package, and the inner bottom surface of the package is the same as the stepped portion inclination direction of the stacked solid-state image sensor or the terraced solid-state image sensor. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is configured to be inclined in a direction. The stacked solid-state image sensor or the terraced solid-state image sensor is joined to the inner bottom surface of the package, and the inner bottom surface of the package follows the slope of the staircase portion of the stacked solid-state image sensor or the terraced solid-state image sensor. 5. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is a curved cylindrical shape or a curved surface on a sphere. An imaging system comprising: the solid-state imaging device according to any one of claims 1 to 7; and an imaging lens having a function of focusing an incident beam bundle on an image receiving surface of the solid-state imaging device.

Images