JP2005049579A5 - - Google Patents

Download PDF

Info

Publication number
JP2005049579A5
JP2005049579A5 JP2003280846A JP2003280846A JP2005049579A5 JP 2005049579 A5 JP2005049579 A5 JP 2005049579A5 JP 2003280846 A JP2003280846 A JP 2003280846A JP 2003280846 A JP2003280846 A JP 2003280846A JP 2005049579 A5 JP2005049579 A5 JP 2005049579A5
Authority
JP
Japan
Prior art keywords
photosensitive member
electrophotographic photosensitive
member according
layer
electrophotographic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003280846A
Other languages
Japanese (ja)
Other versions
JP2005049579A (en
JP4136836B2 (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2003280846A priority Critical patent/JP4136836B2/en
Priority claimed from JP2003280846A external-priority patent/JP4136836B2/en
Publication of JP2005049579A publication Critical patent/JP2005049579A/en
Publication of JP2005049579A5 publication Critical patent/JP2005049579A5/ja
Application granted granted Critical
Publication of JP4136836B2 publication Critical patent/JP4136836B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Claims (6)

導電性支持体及び該導電性支持体上に設けられた感光層を有する電子写真感光体において、
電子写真感光体の表面層、アクリロイルオキシ基(CH=CHCOO−)又はメタクリロイルオキシ基(CH=C(CH)COO−)を有する正孔輸送性化合物を重合及び硬化させることにより形成された層であり
部反射エレメントがGe、入射角が45度の条件でフーリエ変換赤外分光全反射法により求める下記式(1)で表されるA値が0.08以下であることを特徴とする電子写真感光体。
(1) A=S1/S2
(式(1)中、S1は末端オレフィン(CH=)面内変角振動に基づくピーク面積であり、S2はアクリロイルオキシ基又はメタクリロイルオキシ基のC=O伸縮振動に基づくピーク面積である。)
In an electrophotographic photosensitive member having a conductive support and a photosensitive layer provided on the conductive support,
Surface layer of the electrophotographic photosensitive member, acryloyloxy group (= CH 2 CHCOO-) or methacryloyloxy group (CH 2 = C (CH 3 ) COO-) by polymerizing and curing a hole-transporting compound having a Formed layer ,
A value of 0 for internal reflection element Ge, the following formula is obtained by Fourier transform infrared spectroscopy total reflection method is performed under the condition that an incident angle of 45 degrees (1). An electrophotographic photosensitive member characterized by being no more than 08.
(1) A = S1 / S2
(In the formula (1), S1 is the peak area based on the terminal olefin (CH 2 =) plane bending vibration, S2 is the peak area based on the C = O stretching vibration of the acryloyloxy group or a methacryloyloxy group. )
前記A値0.05以下である請求項1記載の電子写真感光体。 The electrophotographic photosensitive member according to claim 1 , wherein the A value is 0.05 or less. 前記表面層が、放射線の照射によって前記正孔輸送性化合物を重合及び硬化させることにより形成された層である請求項1又は2に記載の電子写真感光体。 The electrophotographic photosensitive member according to claim 1 , wherein the surface layer is a layer formed by polymerizing and curing the hole transporting compound by irradiation with radiation . 前記放射線が電子線である請求項3に記載の電子写真感光体。 The electrophotographic photosensitive member according to claim 3, wherein the radiation is an electron beam . 請求項1〜のいずれか一項記載の電子写真感光体を有する電子写真装置。 An electrophotographic apparatus having the electrophotographic photosensitive member according to any one of claims 1-4. 請求項1〜のいずれか一項記載の電子写真感光体を有するプロセスカートリッジ。
The process cartridge having the electrophotographic photosensitive member according to any one of claims 1-4.
JP2003280846A 2003-07-28 2003-07-28 Electrophotographic photosensitive member, electrophotographic apparatus, and process cartridge Expired - Fee Related JP4136836B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003280846A JP4136836B2 (en) 2003-07-28 2003-07-28 Electrophotographic photosensitive member, electrophotographic apparatus, and process cartridge

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003280846A JP4136836B2 (en) 2003-07-28 2003-07-28 Electrophotographic photosensitive member, electrophotographic apparatus, and process cartridge

Publications (3)

Publication Number Publication Date
JP2005049579A JP2005049579A (en) 2005-02-24
JP2005049579A5 true JP2005049579A5 (en) 2006-07-27
JP4136836B2 JP4136836B2 (en) 2008-08-20

Family

ID=34266546

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003280846A Expired - Fee Related JP4136836B2 (en) 2003-07-28 2003-07-28 Electrophotographic photosensitive member, electrophotographic apparatus, and process cartridge

Country Status (1)

Country Link
JP (1) JP4136836B2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5098537B2 (en) * 2007-09-27 2012-12-12 コニカミノルタビジネステクノロジーズ株式会社 Electrophotographic photoreceptor
JP5264377B2 (en) * 2008-09-12 2013-08-14 キヤノン株式会社 Method for producing electrophotographic photosensitive member
JP6242151B2 (en) 2012-11-19 2017-12-06 キヤノン株式会社 Electrophotographic photosensitive member, method for manufacturing electrophotographic photosensitive member, process cartridge, and electrophotographic apparatus
JP6242152B2 (en) 2012-11-19 2017-12-06 キヤノン株式会社 Electrophotographic photosensitive member, method for manufacturing electrophotographic photosensitive member, process cartridge, and electrophotographic apparatus
JP6887928B2 (en) * 2017-09-27 2021-06-16 キヤノン株式会社 Electrophotographic photosensitive member, its manufacturing method, process cartridge and electrophotographic apparatus
JP7034769B2 (en) * 2018-02-28 2022-03-14 キヤノン株式会社 Electrophotographic photosensitive members, process cartridges and electrophotographic equipment

Similar Documents

Publication Publication Date Title
JP6525012B2 (en) Wire grid polarizer with side regions
KR101833572B1 (en) Copolymerizable (meth)acrylic acid polymer, optical alignment film and phase difference film
Vogel et al. A convenient method to produce close‐and non‐close‐packed monolayers using direct assembly at the air–water interface and subsequent plasma‐induced size reduction
Xu et al. Fabrication of moth-eye structures on silicon by direct six-beam laser interference lithography
EP2412004B1 (en) Methods of forming patterns on substrates
JP2005049579A5 (en)
JP2003213437A5 (en)
US9158052B2 (en) Method for manufacturing a wire grid polarizer
CN106662820B (en) Composition for forming silicon-containing resist underlayer film having halosulfonylalkyl group
JP2013500575A5 (en)
KR20160058761A (en) Composition for forming underlayer film of self-assembling film including aliphatic polycyclic structure
KR102115749B1 (en) Organic thin-film solar cell and organic thin-film solar cell manufacturing method
JP2005509177A5 (en)
CN1689175A (en) Film comprising organic semiconductors
CN1914295A (en) Flexible foil moveable by non-mechanical means
KR102160791B1 (en) Block copolymer and method of forming the same
DE502004004729D1 (en) Process for the preparation of two overlapping microstructures
JP2005508062A5 (en)
JP2010153173A5 (en)
JP2007505469A5 (en)
CN1890822A (en) Method for photo-embossing a monomer-containing layer
Cheong et al. High performance flexible actuator of urchin‐like ZnO nanostructure/polyvinylenefluoride hybrid thin film with graphene electrodes for acoustic generator and analyzer
JP2011213053A (en) Method for manufacturing original plate sheet and method for manufacturing uneven pattern transfer sheet
Shin et al. Compression of cross-linked poly (vinylidene fluoride-co-trifluoro ethylene) films for facile ferroelectric polarization
JP2004207731A5 (en)