JP2005048641A - Vacuum pump control device and vacuum pump device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum pump control device or a vacuum pump device for holding a temperature in the pump to be higher. <P>SOLUTION: The temperature of a memory 24 is detected by a temperature sensor 25 and its detection signal is input to a control device 3 via a temperature input interface. The temperature of the memory 24 is recognized by a microcomputer circuit 32 in accordance with the detection signal and a control signal corresponding to the temperature condition of the memory 24 is output to a pump control circuit 33. Then, a control instruction is output from the pump control circuit 33 to parts of a vacuum pump body 2 in accordance with the control signal. In details, when the temperature of the memory 24 is within an operation guaranteeing range, a current into the memory is cut off. When the need exists for accessing the memory 24, an instruction is output to cool the memory 24 and the memory 24 is accessed after cooled. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a vacuum pump control device and a vacuum pump device that control a vacuum pump that performs exhaust processing of a vacuum vessel in a semiconductor manufacturing apparatus, for example.

2. Description of the Related Art Conventionally, for example, a vacuum pump device such as a turbo molecular pump is composed of a pump body device and a control device as disclosed in Patent Document 1 below. By separating the pump body device and the control device in this way, the control device can be used for other vacuum pump devices.
For this reason, the pump body device is equipped with a memory device that stores information such as the model, serial number, characteristics (error correction information, etc.), operation history, error history, and the like of the pump body device.
This memory device is a storage device that can be rewritten and erased in byte units later by electrical operation and is composed of many semiconductor elements. The guaranteed temperature (Topr) is set to about 85 ° C.
JP 2000-240649 A

On the other hand, there is a demand for a vacuum pump device in which the pump body device and the control device separated in this way are integrated. This is aimed at reducing the size of the vacuum pump device, reducing the man-hours for managing the device, and reducing the number of dedicated cables connected to the pump body device and the control device.
In particular, the dedicated cable is very expensive because it includes a large number of signal lines and power supply conductors, and therefore, a reduction in cost is expected by reducing the number of dedicated cables.

  Further, for example, in a vacuum pump device that sucks and exhausts process gas of a semiconductor manufacturing apparatus, when the inside of the pump becomes a low temperature state, a transferred gas (for example, silicon chloride) causes a chemical reaction and precipitates as a solid product. It becomes easy. Therefore, in the vacuum pump device, the temperature inside the pump is maintained at a high temperature by using a heating device such as a baking heater to suppress the adhesion of reaction products.

However, since the above-described memory device having low heat resistance is mounted on the pump main body device, the temperature inside the pump is limited to the operation guarantee temperature (Topr) of these components. In other words, since there is a risk of malfunction, the temperature inside the pump cannot be set higher than the operation guarantee temperature (Topr) of the parts.
In addition, when integrating the pump body device and the control device, not only the size and shape constraints, but also the effect of the heat of the pump body device on many semiconductor components such as the CPU mounted on the control device is sufficient. Therefore, the degree of freedom in designing the part arrangement is limited.

Therefore, a first object of the present invention is to provide a vacuum pump control device or a vacuum pump device that can maintain the temperature inside the pump at a higher temperature.
The second aspect of the present invention is to provide a vacuum pump device that can improve the degree of design freedom in the arrangement of components of the vacuum pump control device in a vacuum pump device in which the pump body device and the control device are integrated. The purpose.

According to the first aspect of the present invention, a gas transfer mechanism for transferring the gas sucked from the intake port to the exhaust port, a heating means for heating the flow path of the gas transferred by the gas transfer mechanism, and a normal operation when energized A vacuum pump that controls a vacuum pump that includes a storage device having a guaranteed operating temperature range, temperature detection means for detecting the temperature of the storage device, and cooling means for cooling the storage device A temperature acquisition means for acquiring the temperature of the storage device detected by the temperature detection means; an access determination means for determining the necessity of access to the storage device; and A cooling instruction means for instructing the cooling means to perform cooling when it is determined that the access is necessary outside the guaranteed temperature range; A connection / disconnection means that is in an energized state with respect to the storage device when it is determined that the access is necessary and within the guaranteed operating temperature range, and at least when it is outside the guaranteed operating temperature range, It is determined that the access is necessary, and the first object is achieved by providing access means for accessing the storage device after energization by the connection / disconnection means.
The access is, for example, a process for reading the contents of the storage device or a process for rewriting the contents of the storage device.

  According to a second aspect of the present invention, the first object is achieved by including the vacuum pump control device according to the first aspect.

According to a third aspect of the present invention, there is provided a vacuum pump body comprising: a gas transfer mechanism that transfers the gas sucked from the intake port to the exhaust port; and a heating means that heats the flow path of the gas transferred by the gas transfer mechanism. Among the low heat resistance components, the storage device that has an operation guarantee temperature range that guarantees normal operation when energized is mounted in the high temperature region, and other low heat resistance components are mounted in the low temperature region. A vacuum pump device integrated with a vacuum pump control device for controlling the vacuum pump body, the temperature detecting means for detecting the temperature of the storage device, and at least the temperature of the previous storage device is within the guaranteed operating temperature range The storage device is energized when it is determined that the access is necessary and at least outside the guaranteed operating temperature range. And when it is determined that the access is necessary when the acquired temperature is outside the guaranteed operating temperature range, after the storage device is cooled and the access is determined to be necessary and the connection / disconnection means is energized. The second object is achieved by providing access means for accessing the storage device.
Further, the cooling unit may be configured by, for example, a heating stop unit that stops heating by the heating unit, or a heating adjustment unit that adjusts the degree of heating.
The access is, for example, a process for reading the contents of the storage device or a process for rewriting the contents of the storage device.

According to the present invention, when the temperature of the storage device is outside the guaranteed operating temperature range, the vacuum pump body is operated even if the temperature of the storage device is outside the guaranteed operating temperature range by putting the storage device in a non-energized state. Can be made. Therefore, the gas flow path can be kept at a higher temperature than before, and the precipitation of the solid product can be further suppressed.
Further, according to the present invention, in the vacuum pump device in which the vacuum pump main body and the vacuum pump control device are integrated, the storage device can be mounted in a high temperature region, so that the degree of design freedom can be improved.

  Hereinafter, preferred embodiments of the vacuum pump device and the temperature control method of the vacuum pump device of the present invention will be described in detail with reference to FIGS. 1 to 6.

(First embodiment)
FIG. 1 is a diagram showing a schematic configuration of the vacuum pump device according to the first embodiment.
As shown in FIG. 1, the vacuum pump device 1 shown in the first embodiment includes a pump body device 2 and a control device 3, which are connected via a dedicated cable 4.
The cable 4 is provided with a number of signal lines for transmitting and receiving control commands and sensor detection information, and a power supply line for supplying power for driving the rotating body and internal circuits.
The pump body device 2 is provided with an air inlet 21 and an exhaust port 22, and is provided with a gas transfer mechanism 23 that transfers gas sucked from the air inlet 21 to the exhaust port 22.
The gas transfer mechanism 23 is configured by, for example, a turbo molecular pump, a thread groove pump, or a combined pump of a turbo molecular pump and a thread groove pump.

Further, the pump main body device 2 is provided with a memory 24 in which information related to the pump main body device 2 is stored and a temperature sensor 25 for detecting the temperature of the memory 24.
Specifically, the memory 24 is configured by a non-volatile storage device such as an EEP-ROM capable of rewriting data in byte units by electrical operation. The memory 24 stores data such as the model, serial number, characteristics (such as error correction information), operation history, and error history of the pump main unit.
The temperature sensor 25 is configured by, for example, a contact sensor using a platinum resistance thermometer pair, a thermistor, a thermocouple, or the like, or a non-contact sensor using a laser.

Since the memory 24 is composed of semiconductor elements, the manufacturer's guaranteed operating temperature (Topr) is set to about 85 ° C. in general. The guaranteed operating temperature (Topr) is a temperature range that guarantees that the part operates normally when energized. For this reason, when the memory 24 is operating (when energized), the temperature of the memory 24 must be kept below the guaranteed operating temperature (Topr).
In addition, a storage temperature (Tstr) is set for the electronic components such as the memory 24 in addition to the above-described guaranteed operation temperature (Topr). The storage temperature (Tstr) indicates a temperature range in which parts can be maintained without failure in a non-energized state. The storage temperature (Tstr) is set to a value higher than the operation guarantee temperature (Topr), and is set to about 125 ° C. in a nonvolatile storage device such as the memory 24.
Data of guaranteed operating temperature (Topr) and storage temperature (Tstr) are also stored in the memory 24 as characteristic data of the memory 24.

Further, the pump body device 2 is provided with a heating device 26 for performing temperature control for keeping the pump body device 2 at a predetermined set temperature. The temperature control of the pump body device 2 by the heating device 26 is performed based on a control signal from the pump control circuit 33.
In the pump body device 2, the gas (for example, silicon chloride) transferred by the gas transfer mechanism 23 may cause a chemical reaction to precipitate as a solid product, and may be deposited and deposited inside the gas transfer mechanism 23. .
In order to suppress the precipitation of such a solid product, in the vacuum pump device 1 according to the present embodiment, the pump body device 2 is heated by the heating device 26 to keep the gas transfer mechanism 23 at a high temperature.
The heating device 26 is configured by a baking heater that is attached to the outside of the casing of the pump body device 2 to heat the gas transfer mechanism 23, an electric heater that heats a heating wire provided in the gas transfer mechanism 23, or the like. Has been.

Further, the pump main body device 2 is provided with a cooling device 27 for protecting components having low heat resistance such as the memory 24. The cooling device 27 is performed via the pump control circuit 33.
The cooling device 27 is configured by an air cooling fan that cools the casing of the pump main body device 2 with air from the outside, a liquid cooling device that is cooled by cooling water (refrigerant) flowing through a cooling pipe disposed inside the pump main body device 2, and the like. Has been.

On the other hand, the control device 3 includes a power supply circuit 31, a microcomputer circuit 32, and a pump control circuit 33.
The power supply circuit 31 is suitable for an AC 100V or 200V commercial power supply as a drive power supply for each part of the control device 3 and a power supply for driving the gas transfer mechanism of the pump body device 2 (for example, a power supply supplied to a motor). It is an electric circuit for converting the voltage and frequency.
The power supply circuit 31 is configured by a power conversion device such as an AC / DC converter, for example.

The microcomputer circuit 32 is a circuit in which an MPU (microprocessing unit) that performs arithmetic processing and a storage device such as a ROM or a RAM are integrated. Here, electronic control of the vacuum pump device 1 is executed. Yes.
The microcomputer circuit 32 has a temperature input interface 321 for receiving an input of a detection signal of the temperature sensor 25 provided in the pump body device 2 and a memory access for accessing the memory 24 provided in the pump body device 2. A circuit 322 is provided.

The memory access circuit 322 can read and rewrite (update) data stored in the memory 24.
The memory access circuit 322 is provided with a RAM for temporarily storing update data (operation history, error history, etc.) of the memory 24. Until the memory 24 can be accessed, Update data is stored in this RAM.

The transfer of the update data to the memory 24 is executed when an access request such as a preset automatic update or an error occurs, for example.
Note that the microcomputer circuit 32 determines whether or not an access request has occurred, that is, whether or not the memory 24 needs to be accessed. For example, when an error notification transferred from the pump main body device 2 is received when an error occurs, when an error is detected in the pump main body device 2 or the control device 3 in the control device 3, an alarm for notifying the timing of automatic update is generated. It is determined that there is a need for access to the memory 24 when it is activated.

  In the pump control circuit 33, the pump body device 2 is controlled based on the calculation processing result in the microcomputer circuit 32. For example, control of the motor and magnetic bearing device in the gas transfer mechanism 23, temperature control of the pump body device 2 by the heating device 26 and the cooling device 27, and the like are performed.

Next, operation | movement of the vacuum pump apparatus 1 in 1st Embodiment comprised in this way is demonstrated.
FIG. 2 is a flowchart showing the procedure of the temperature control process of the pump body device 2 when the memory 24 is accessed.
FIG. 3 is a time chart showing a change in the temperature (Tmem) of the memory 24 and the energization state of the memory 24.
Here, a description will be given of the procedure of temperature control processing in the case where a nonvolatile storage device having a guaranteed operation temperature (Topr): 85 ° C. and a storage temperature (Tstr): 125 ° C. is used for the memory 24.
It should be noted that the data relating to the guaranteed operating temperature (Topr) and the storage temperature (Tstr) of the memory 24 may be stored in advance in the storage device of the microcomputer circuit 32, or when the vacuum pump device 1 is activated, the memory 24 is stored. You may make it read from.

First, the microcomputer circuit 32 determines whether or not an instruction to reflect the update data (such as an error history) stored in the RAM of the memory access circuit 322 in the memory 24 is issued in the current processing. It is determined whether or not there is a need for access to the memory 24 (step 11).
The necessity of accessing the memory 24 is not limited to when the vacuum pump device 1 is started or stopped, but also when an error occurs or when operation history data that is periodically executed is updated. It may occur while the gas transfer process is being performed at 23, that is, while the pump body device 2 is operating.

If the microcomputer circuit 32 determines that there is no need to access the memory 24 (step 11; N), the temperature control process is repeated.
On the other hand, when it is determined that the microcomputer circuit 32 needs to access the memory 24 (step 11; Y), the microcomputer circuit 32 detects the temperature of the memory 24 detected by the temperature sensor 25. A signal is received via the temperature input interface 321 and the temperature (Tmem) of the memory 24 is detected based on this detection signal (step 12).
The microcomputer circuit 32 compares the detected temperature (Tmem) of the memory 24 with the guaranteed operating temperature (Topr) of the memory 24 stored in the RAM, and the temperature (Tmem) of the memory 24 is guaranteed to operate. It is determined whether or not the temperature is higher than the temperature (Topr) (step 13).

When the temperature (Tmem) of the memory 24 is higher than the operation guarantee temperature (Topr) (step 13; Y), the microcomputer circuit 32 outputs a command (control signal) for cooling the memory 24 to the pump control circuit 33. Then, the cooling process of the memory 24 is performed via the pump control device circuit 33 (step 14). Then, after the cooling process, the process of step 12 is repeated again.
A period during which the cooling process of the memory 24 is performed is shown as a period a in FIG. As shown in the figure, since the temperature (Tmem) of the memory 24 is higher than the guaranteed operating temperature (Topr) in the period a, the energization of the memory 24 is in an off state, that is, a cutoff state. Therefore, in the period a, the memory 24 is in a storage state as in the steady state.
The cooling process of the memory 24 is performed by starting the cooling device 27. The degree of cooling (cooling intensity, period, etc.) performed in one cooling process can be arbitrarily set.

  In parallel with the cooling by the cooling device 27, the heating of the pump body device 2 by the heating device 26 may be stopped. By stopping the heating of the pump body device 2 by the heating device 26, the efficiency of the cooling process of the memory 24 can be increased. In such a case, since the internal temperature of the pump body device 2 may decrease, when the access to the memory 24 described later is completed, the heating device 26 immediately controls the heating of the pump body device 2. Try to resume.

On the other hand, when the temperature (Tmem) of the memory 24 is equal to or lower than the operation guarantee temperature (Topr) (step 13; N), the microcomputer circuit 32 starts energization (power supply) to the memory 24 (step 15). When energization of the memory 24 is started, the state of the memory 24 shifts from a storage state that is a non-energized state to an operating state that is an energized state.
After the memory 24 is energized and a sufficient power supply voltage is applied, the microcomputer circuit 32 executes access to the memory 24 via the memory access circuit 322 (step 16).
A period during which the access process to the memory 24 is performed is shown as a period b in FIG.

When access to the memory 24 is executed, the contents of the memory 24 are rewritten (data update) based on update data (operation history, error history, etc.) stored in the RAM provided in the memory access circuit 322. )I do.
Then, after rewriting the contents of the memory 24, the power supply to the memory 24 is again cut off (step 17). When the power supply to the memory 24 is cut off, the state of the memory 24 shifts from the operating state (when power is supplied) to the storage state (when power is not supplied).
After the power supply to the memory 24 is cut off, the microcomputer circuit 32 stops the cooling process of the memory 24 (step 18) and repeats the temperature control process.
In addition, the period when the cooling process of the pump main body apparatus 2 has stopped is shown in the period c of FIG.

In the first embodiment, the memory 24 can be accessed by the microcomputer circuit 32 when the temperature (Tmem) of the memory 24 falls to the operation guarantee temperature (Topr). The temperature condition value enabling the access can be arbitrarily set in a range lower than the operation guarantee temperature (Topr).
In the first embodiment, the memory 24 is energized when it is necessary to access the memory 24 and the temperature (Tmem) of the memory 24 is equal to or lower than the guaranteed operating temperature (Topr). Like to do. However, the timing of energizing the memory 24 is not limited to this, and the temperature (Tmem) of the memory 24 is the operation guarantee temperature even when the need to access the memory 24 occurs. It is also possible to energize the memory 24 at a timing equal to or less than (Topr).

  As described above, according to the first embodiment, when the temperature of the memory 24 is out of the guaranteed operating temperature (Topr) range, the power supply to the memory 24 is cut off to enter the storage state, so The internal temperature of the apparatus 2 can be set to a higher temperature than before. However, the upper limit of the internal temperature is limited to the storage temperature (Tstr) of the memory 24.

(Second Embodiment)
FIG. 4 is a diagram showing a schematic configuration of a vacuum pump device according to the second embodiment.
In the second embodiment, a vacuum pump device 5 in which the pump body device 2 and the control device 3 that are separately provided in the vacuum pump device 1 shown in the first embodiment are integrated. Will be described.
As shown in FIG. 4, the vacuum pump device 5 shown in the second embodiment includes a pump main body 53 and a controller 58.
The pump body 53 is provided with an intake port 51 and an exhaust port 52, and a gas transfer mechanism is configured to transfer the gas sucked from the intake port 51 by the pump body 53 to the exhaust port 52. That is, the pump main body 53 is configured by, for example, a turbo molecular pump, a thread groove pump, or a combined pump of a turbo molecular pump and a thread groove pump.

The pump body 53 is provided with a heating device 54 for performing temperature control for keeping the inside of the pump body 53 at a predetermined set temperature.
In the pump main body 53, a gas to be transferred (for example, silicon chloride) may cause a chemical reaction to precipitate as a solid product, and may adhere to and accumulate in the pump main body 53.
In particular, since such a solid product is likely to be precipitated at a lower temperature, a large amount is deposited in the base 55 adjacent to the control device 56.
In order to suppress the precipitation of such a solid product, the pump main body 53 is heated by the same heating device 54 as in the first embodiment so that the inside of the pump near the base 55 is kept at a high temperature.

The control unit 58 includes a control device 56 and a cooling device 57 for cooling the control device 56.
In the control device 56, for example, control of a motor and a magnetic bearing device, and temperature control by a heating device 54 and a cooling device 57 are performed in the pump main body 53.
The cooling device 57 is an air cooling fan that cools the casing of the vacuum pump device 1 similar to that of the first embodiment with air from the outside, or cooling water (refrigerant) that flows through a cooling pipe disposed inside the control device 56. It is comprised by the liquid cooling device etc. which cool by.
In particular, by utilizing a liquid cooling device, a specific area inside the control device 56 can be effectively cooled.

  Since the control device 56 is attached so as to be adjacent to the pump main body 53, it is affected by the heat of the pump main body 53. And since the control apparatus 56 is comprised with many semiconductor components, if it receives the influence of these heat excessively, there exists a possibility of producing malfunctions, such as malfunction and destruction. In order to avoid such problems, the control device 56 is cooled by a cooling device 57.

On the other hand, as described above, in the pump body 53, the amount of solid product deposited increases as the temperature inside the pump decreases. To be kept in.
Therefore, the region of the control device 56 includes a high temperature region 56a close to the heating device 54 and a low temperature region 56b far from the heating device 54 as shown in FIG.
The region of the control device 56 shown in FIG. 4 schematically shows a model case when the cooling device 57 is configured by an air cooling fan. Therefore, when the cooling device 57 is configured by a liquid cooling device and a specific region inside the control device 56 is cooled, the aspects of the high temperature region 56a and the low temperature region 56b in the control device 56 also change.

FIG. 5 is a table showing the main electrical components used in the control device 56 for each level of heat resistance level, classification, and type.
As shown in FIG. 5, the parts used in the control device 56 are largely divided into a group A of parts group having high heat resistance and a group B of parts group having low heat resistance depending on the difference in heat resistance level. Can be separated.
Since the passive elements such as resistors and capacitors belonging to the group A have excellent heat resistance, that is, the range of the guaranteed operating temperature (Topr) is wider than the parts belonging to the group B, the control device 56 It can be mounted not only in the low temperature region 56b but also in the high temperature region 56a.

On the other hand, active elements such as CPUs and logic ICs belonging to Group B have low heat resistance, that is, the range of guaranteed operating temperature (Topr) is narrower than components belonging to Group A, and the influence of heat is low. Since it must be avoided, it is mounted in the low temperature region 56 b of the control device 56.
In particular, components that play an important role in the control of the vacuum pump device 5 such as a CPU that is an arithmetic processing unit are not easily affected by heat from the heating device 54 or heat from components that generate a large amount of heat due to internal loss. It is arranged in a region, for example, a place farthest from the heating device 54.

In addition, when the control device 56 is constantly cooled by the cooling device 57, the components that play an important role in the control of the vacuum pump device 5 described above are arranged in a region that is susceptible to the cooling action by the cooling device 57. Is preferred.
For example, when an air cooling fan is employed, it is preferable that the air cooling fan be disposed in a region close to the outer surface where heat can be radiated with a high heat exchange rate.

Thus, by arranging (mounting) the mounted components in a region suitable for heat resistance, reliability can be maintained even in the vacuum pump device 5 in which the pump main body 53 and the controller 58 are integrated. .
Moreover, by realizing the integration of the pump body 53 and the controller 58, a dedicated cable for connecting the pump body 53 and the controller 58 can be reduced, and the cost of the vacuum pump device 5 can be reduced. Can be made.

  By the way, in the vacuum pump device 5 in which the pump body device 2 and the control device 3 as shown in the second embodiment are integrated, unlike the separate type vacuum pump device 1 as shown in the first embodiment, Due to the configuration, there may be a case where a sufficient area for configuring the control device 56 cannot be secured. In such a case, as described above, it is physically difficult to arrange all the parts having low heat resistance belonging to the group B in the low temperature region 56b of the control device 56.

FIG. 6 is a diagram showing a modification of the vacuum pump device 5 according to the second embodiment.
Next, a description will be given of a modified example in which a part of parts belonging to the group B can be arranged in the high temperature region 56a.
Here, among the parts belonging to group B, a vacuum pump in which a part that does not need to keep operating at all times, that is, a part that only needs to be energized and operated only at a predetermined request is arranged in the high temperature region 56a. The device 5 will be described.
More specifically, a vacuum in which a memory 561 such as an EEP-ROM storing data such as the model, serial number, various characteristics (error correction information, etc.), operation history, error history, etc. of the vacuum pump device 5 is arranged in the high temperature region 56a. The pump device 5 will be described.

Further, in the memory 561, the same guaranteed operating temperature (Topr) and storage temperature (Tstr) are set as in the memory 24 described in the first embodiment. Here, a non-volatile memory device having a guaranteed operation temperature (Topr): 85 ° C. and a storage temperature (Tstr): 125 ° C. is used as the memory 561.
In the high temperature region 56 a of the control device 56, a memory 561 and a temperature sensor 562 for detecting the temperature of the memory 561 are arranged. The other parts belonging to the group B are arranged in the low temperature region 56b.

Next, operation | movement of the vacuum pump apparatus 5 comprised in this way is demonstrated.
The temperature control process of the vacuum pump device 5 at the time of accessing the memory 561 in this modified example is also performed in the same manner as the vacuum pump device 1 shown in the first embodiment. That is, temperature control is performed so that the temperature of the memory 561 is lowered to the guaranteed operating temperature (Topr) only during the period in which the memory 561 is operated.
Note that the data relating to the guaranteed operation temperature (Topr) and the storage temperature (Tstr) of the memory 24 may be stored in advance in a storage device of a microcomputer circuit provided in the control device 56, or a vacuum pump. You may make it read from the memory 561 at the time of starting of the apparatus 5. FIG.

When the necessity to access the memory 561 arises, the control device 56 detects the temperature (Tmem) of the memory 561 by using the temperature sensor 562, and performs a comparison with the operation guarantee temperature (Topr).
Note that the control device 56 determines whether or not the memory 561 needs to be accessed. For example, when an error notification transferred from the pump main body 53 when an error occurs is received, when an error is detected in the pump main body 53 or the control device 56 in the control device 56, an alarm for notifying the timing of automatic update is issued. It is determined that there is a need for access to the memory 24 when it is activated.

When the detected temperature (Tmem) of the memory 561 is higher than the guaranteed operating temperature (Topr), the control device 56 instructs the stop of the heating device 54 or a decrease in the output, and the heat to the control device 56 is reduced. Try to reduce the impact. Moreover, you may make it increase the output of the cooling device 57 as needed.
Then, when the temperature (Tmem) of the memory 561 becomes equal to or lower than the operation guarantee temperature (Topr), the control device 56 starts energizing the memory 561 and executes access to the memory 561.
It should be noted that during the period in which the memory 561 is energized, the temperature control in the vacuum pump device 5 is performed so that the temperature (Tmem) of the memory 561 does not exceed the guaranteed operating temperature (Topr).

When access to the memory 561 is executed, data in the memory 561 is rewritten (data update). After rewriting the contents of the memory 561, the control device 56 cuts off the power supply to the memory 561 again. When the energization is interrupted, the memory 561 shifts from the operating state (when energized) to the storage state (when not energized).
Then, after the energization to the memory 561 is cut off, the control device 56 executes temperature control during steady operation.

  In the modification of the second embodiment, the memory 561 can be accessed when the temperature (Tmem) of the memory 561 decreases to the operation guarantee temperature (Topr), but the memory 561 is accessed. The temperature condition value that enables this can be arbitrarily set in a range lower than the guaranteed operating temperature (Topr).

  In the second embodiment, the memory 561 is energized when the necessity to access the memory 561 occurs and the temperature (Tmem) of the memory 561 is equal to or lower than the guaranteed operating temperature (Topr). Like to do. However, the timing at which the memory 561 is energized is not limited to this, and the memory 24 may be accessed even when there is a need to access the memory 24, as in the first embodiment. The memory 561 may be energized at a timing when the temperature (Tmem) becomes equal to or lower than the operation guarantee temperature (Topr).

As described above, according to the modification of the second embodiment, when the access method for the memory 24 described in the first embodiment is applied, the temperature of the memory 561 is outside the guaranteed operating temperature (Topr) range. The memory 561 can be arranged in the high temperature region 56a in which the temperature at the normal time exceeds the guaranteed operating temperature (Topr) of the memory 561 by cutting off the power supply to the memory 561 and setting the storage state.
As described above, by allowing the part belonging to the group B to be arranged in the high temperature region 56a, the degree of freedom in designing the control device 56 can be improved.

It is the figure which showed schematic structure of the vacuum pump apparatus which concerns on 1st Embodiment. It is the flowchart which showed the procedure of the temperature control process of the pump main body apparatus at the time of access to a memory. It is the time chart which showed the change of the temperature (Tmem) of memory, and the energization state of memory. It is the figure which showed schematic structure of the vacuum pump apparatus which concerns on 2nd Embodiment. It is the table | surface which showed the main electrical components used with the control apparatus according to the hierarchy of a heat resistant level, classification, and classification. It is the figure shown about the modification of the vacuum pump apparatus which concerns on 2nd Embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Vacuum pump apparatus 2 Pump main body apparatus 3 Control apparatus 4 Cable 21 Intake port 22 Exhaust port 23 Gas transfer mechanism 24 Memory 25 Temperature sensor 26 Heating device 27 Cooling device 31 Power supply device 32 Microcomputer circuit 33 Pump control circuit

Claims (3)

A gas transfer mechanism for transferring the gas sucked from the intake port to the exhaust port, a heating means for heating a flow path of the gas transferred by the gas transfer mechanism, and an operation guarantee temperature range for guaranteeing normal operation when energized. A vacuum pump control device that controls an existing storage device, a temperature detection unit that detects a temperature of the storage device, and a vacuum pump that includes a cooling unit that cools the storage device,
Temperature acquisition means for acquiring the temperature of the storage device detected by the temperature detection means;
Access determining means for determining the necessity of access to the storage device;
Cooling instruction means for instructing cooling to the cooling means when it is determined that the access is necessary when the acquired temperature is outside the guaranteed operating temperature range;
The storage device is energized when at least the acquired temperature is within the guaranteed operating temperature range and the access is determined to be necessary, and is deenergized when at least outside the guaranteed operating temperature range. Cutting and disconnecting means,
Access means for determining that the access is necessary and accessing the storage device after energization by the connection means;
A vacuum pump control device comprising: A vacuum pump device comprising the vacuum pump control device according to claim 1. A vacuum pump body comprising a gas transfer mechanism for transferring the gas sucked from the intake port to the exhaust port, and a heating means for heating the flow path of the gas transferred by the gas transfer mechanism;
Among the components with low heat resistance, the above-mentioned vacuum in which a storage device having an operation guaranteed temperature range that guarantees normal operation when energized is mounted in a high temperature region, and other low heat resistance components are mounted in a low temperature region A vacuum pump control device for controlling the pump body;
An integrated vacuum pump device,
Temperature detecting means for detecting the temperature of the storage device;
When at least the temperature of the previous storage device is within the guaranteed operation temperature range and the access is determined to be necessary, the storage device is energized, and at least when it is outside the guaranteed operation temperature range Disconnection means to be in a state;
A cooling means for cooling the storage device when it is determined that the access is necessary when the acquired temperature is outside the guaranteed operating temperature range;
Access means for determining that the access is necessary and accessing the storage device after energization by the connection means;
A vacuum pump device comprising:

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